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WO2018012368A1 - Waveguide filter - Google Patents

Waveguide filter Download PDF

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Publication number
WO2018012368A1
WO2018012368A1 PCT/JP2017/024642 JP2017024642W WO2018012368A1 WO 2018012368 A1 WO2018012368 A1 WO 2018012368A1 JP 2017024642 W JP2017024642 W JP 2017024642W WO 2018012368 A1 WO2018012368 A1 WO 2018012368A1
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WIPO (PCT)
Prior art keywords
substrate
metal film
filter
substrate body
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2017/024642
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French (fr)
Japanese (ja)
Inventor
和田 靖
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NEC Corp
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NEC Corp
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Publication date
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Publication of WO2018012368A1 publication Critical patent/WO2018012368A1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/207Hollow waveguide filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/08Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/107Hollow-waveguide/strip-line transitions

Definitions

  • the present invention relates to a waveguide filter.
  • a microwave circuit (hereinafter simply referred to as “MIC (Microwave Integrated Circuit)”) that constitutes a high-frequency circuit in the microwave or millimeter wave band is a dedicated package specialized for a specific frequency, and a semiconductor device such as a mixer or an amplifier.
  • a high frequency module is configured by providing a ceramic substrate.
  • the MIC requires a dedicated and expensive high frequency package.
  • the high-frequency package is manually soldered to a printed circuit board (hereinafter simply referred to as “substrate”) including a control circuit and the like. For this reason, the wireless communication device provided with the MIC is expensive.
  • the formation accuracy of the circuit pattern on the substrate is low.
  • the above-described filter forming method is not suitable as a filter forming method having a highly accurate unnecessary wave suppressing function. Therefore, in a related technique, when a highly accurate filter capable of suppressing unnecessary waves is required, a waveguide filter is used as a filter.
  • Patent Document 1 discloses a waveguide filter including a metal partition plate that narrows a cross section perpendicular to a wave traveling direction inside a waveguide. Further, Patent Document 1 discloses that a box-shaped part including a partition plate in a drawing direction parallel to the surface in which a plane parallel to the wave traveling direction is open, and an outside of the filter using a conductor. It is disclosed that a substrate on which an output end is formed is prepared as a separate body, and that the component and the substrate are bonded so that the opening surface of the component and the surface on which the input / output end of the substrate is formed face each other. Yes.
  • An object of the present invention is to provide a waveguide filter having good filter characteristics in a high frequency region in view of the above-described problems.
  • a waveguide filter includes a first substrate body, a filter pattern provided on a first surface of the first substrate body, and the first surface.
  • a first substrate including a first metal film disposed on an outer peripheral portion of the second surface of the first substrate body located on the opposite side of the first substrate body, and a hollow portion extending in one direction,
  • a filter case comprising: a metal case provided on a first surface side of the first substrate body, the side facing the filter pattern being open; and the hollow portion via the first substrate;
  • a second substrate body having a penetrating portion in an opposing portion; and electrically provided through the first metal film and solder provided around the through portion of the first surface of the second substrate body.
  • the waveguide filter of the present invention it is possible to accurately form a filter pattern using a metal film by providing a filter pattern that functions as a filter on the first surface of the first substrate body.
  • a metal film provided on the first substrate body and the second metal film provided on the first surface of the second substrate body and electrically connected to the first metal film via solder.
  • FIG. 1 is a perspective view showing a waveguide filter according to a first embodiment of the present invention.
  • FIG. 2 is an exploded perspective view showing the waveguide filter shown in FIG. 1.
  • FIG. 3 is a plan view showing an upper surface (front surface) of the first substrate shown in FIG. 2. It is a top view which shows the lower surface (back surface) of the 1st board
  • FIG. 3 is a cross-sectional view of the first substrate along the line CC in FIG. 2.
  • FIG. 2 is a cross-sectional view of the waveguide filter along the line AA in FIG. 1.
  • FIG. 3 is a plan view showing a second substrate shown in FIG. 2.
  • FIG. 8 is a cross-sectional view of the second substrate along the line EE in FIG. 7.
  • FIG. 10 is an exploded perspective view showing the waveguide filter shown in FIG. 9.
  • FIG. 10 is a cross-sectional view of the waveguide filter taken along line FF in FIG. 9. It is a graph which shows the relationship between the frequency in the waveguide filter shown by FIG. 1, an insertion loss, and a return loss.
  • FIG. 1 is a perspective view of a waveguide filter according to a first embodiment of the present invention.
  • FIG. 2 is an exploded perspective view of the waveguide filter shown in FIG.
  • the waveguide filter 10 of the first embodiment includes a filter component 11, a second substrate 13, and a metal substrate 14. 1 and 2, the X direction is the width direction of the hollow portion 33, the Y direction is the extending direction (length direction) of the hollow portion 33, and the Z direction is a direction orthogonal to the XY plane direction (first direction)
  • substrate 13, or the height direction of the hollow part 33) is each shown.
  • a symbol B is a region (hereinafter referred to as “region B”) of the first substrate body 21 where the filter pattern 23 is formed, and a symbol L1 is a length of the hollow portion 33 (hereinafter “length L1”).
  • the symbol H1 indicates the height of the hollow portion 33 (hereinafter referred to as “height H1”), and the symbol W1 indicates the width of the hollow portion 33 (hereinafter referred to as “width W1”).
  • FIG. 3 is a plan view of the upper surface side (front surface side) of the first substrate shown in FIG.
  • FIG. 4 is a plan view of the lower surface side (back surface side) of the first substrate shown in FIG. 4, the same components as those shown in FIGS. 2 and 3 are denoted by the same reference numerals.
  • FIG. 5 is a cross-sectional view of the first substrate shown in FIG. 2 taken along the line CC. In FIG. 5, the same components as those shown in FIGS. 3 and 4 are denoted by the same reference numerals.
  • FIG. 6 is a cross-sectional view of the waveguide filter shown in FIG. 1 cut along line AA.
  • the cutting position (CC line) of the waveguide filter 10 shown in FIG. 6 corresponds to the cutting position (CC line shown in FIG. 2) of the first substrate 16 shown in FIG.
  • the same components as those shown in FIGS. 1 to 5 are denoted by the same reference numerals.
  • the filter component 11 includes a first substrate 16 and a metal case 17.
  • the first substrate 16 includes a first substrate body 21, a filter pattern 23, a microstrip pattern 24, a first metal film 25 (FIG. 4), and a through electrode 27 (FIGS. 3 and 4). And having.
  • the first substrate body 21 is an insulating substrate extending in the Y direction.
  • the first substrate body 21 has a first surface 21a and a second surface 21b.
  • the first surface 21a is a surface on the side where the metal case 17 is disposed.
  • the second surface 21b is a surface disposed on the opposite side of the first surface 21a.
  • the second surface 21b is a surface on the side where the second substrate 13 is disposed.
  • the thickness of the first substrate body 21 may be smaller than the height H1 of the hollow portion 33 formed by the metal case 17.
  • the dielectric constant of the first substrate body 21 is preferably 5 or less, for example.
  • the filter pattern 23 is formed on the first surface 21 a of the first substrate body 21 surrounded by the region B arranged at the center of the first substrate body 21. Is provided.
  • the filter pattern 23 can be formed, for example, by forming a metal film.
  • a plating film for example, an Au plating film or an Ag plating film
  • the microstrip pattern 24 is provided on the first surface 21a of the first substrate body 21 located on both sides of the region B in the Y direction.
  • the microstrip pattern 24 is electrically connected to the filter pattern 23 by being connected to the filter pattern 23.
  • the microstrip pattern 24 can be formed of a metal film similar to the metal film that forms the filter pattern 23.
  • the first metal film 25 is disposed on the outer peripheral portion of the second surface 21 b of the first substrate body 21.
  • a metal film for example, an Au plating film or an Ag plating film
  • solder 31 is provided on one surface 25 a of the first metal film 25 (a surface facing the second substrate 13).
  • the first metal film 25 is electrically connected to the second substrate 13 via the solder 31.
  • a plurality of through electrodes 27 are arranged to extend in the Y direction on both sides in the width direction (X direction) of the first substrate body 21.
  • the through electrode 27 passes through the first substrate body 21.
  • the through electrode 27 has one end connected to the filter pattern 23 or the microstrip pattern 24 and the other end connected to the first metal film 25. Accordingly, the through electrode 27 is electrically connected to the filter pattern 23 and the microstrip pattern 24 and the first metal film 25.
  • the through electrode 27 can be made of a metal film similar to the first metal film 25, for example.
  • the metal case 17 is U-shaped and extends in one direction (in this case, the Y direction).
  • the metal case 17 defines a hollow portion 33 extending in one direction on the inner side.
  • the shape of the hollow portion 33 can be, for example, a quadrangular prism.
  • the metal case 17 has an open end 17 ⁇ / b> A on the side facing the filter pattern 23 and the microstrip pattern 24.
  • the metal case 17 has a pair of connecting portions 35 extending in the Y direction on the open end 17A side.
  • the pair of connection portions 35 are joined to the filter pattern 23 and the microstrip pattern 24 arranged on the first surface 21 a side of the first substrate body 21.
  • the metal case 17 is electrically connected to the first substrate 16 and the second substrate 13.
  • the metal case 17 configured as described above constitutes the upper part of the waveguide of the waveguide filter 10.
  • FIG. 7 is a plan view of the second substrate shown in FIG.
  • the same components as those shown in FIGS. 1, 2, and 6 are denoted by the same reference numerals. 1, 2, and 7, only a part of the second substrate 13 extending in the XY plane direction is shown.
  • FIG. 8 is a cross-sectional view of the second substrate shown in FIG. 7 cut along the line EE. In FIG. 8, the same components as those in the structure shown in FIG.
  • the second substrate 13 includes a second substrate body 38, a second metal film 41, a pair of high frequency signal patterns 43, and a solder.
  • a resist 44, a third metal film 45, and a through electrode 46 are included.
  • the second substrate body 38 is an insulating substrate extending in the XY plane.
  • the second substrate main body 38 has a first surface 38 a, a second surface 38 b, and a through portion 51.
  • the first surface 38a is a surface on the side where the metal case 17 is disposed.
  • the second surface 38b is a surface disposed on the opposite side of the first surface 38a.
  • the second surface 38b is a surface on the side where the second substrate 13 is disposed.
  • the penetrating portion 51 penetrates the second substrate main body 38 facing the hollow portion 33 through the first substrate 16.
  • the penetrating portion 51 is defined by a surface 38c of the second substrate body 38 (a surface on which the third metal film 45 constituting a part of the waveguide is formed).
  • the penetrating portion 51 is rectangular in plan view and extends in the Y direction.
  • the width W2 of the penetrating part 51 is equal to the width W1 of the hollow part 33. Further, the length L ⁇ b> 2 of the penetrating part 51 is equal to the length L ⁇ b> 1 of the hollow part 33. Thus, the length L2 and the width W2 of the penetrating portion 51 are configured to be equal to the length L1 and the width W1 of the hollow portion 33, so that the waveguide is partitioned by the metal case 17 and the third metal film 45. The length and width of the formed portion can be set to predetermined values.
  • the second metal film 41 is provided around the through portion 51 in the first surface 38 a of the second substrate body 38.
  • a solder 31 is disposed on the upper surface of the second metal film 41.
  • the second metal film 41 is electrically connected to the first metal film 25 via the solder 31. Thereby, the second metal film 41 is electrically connected to the first substrate 16 and the metal case 17.
  • a metal film similar to the first metal film 25 can be used.
  • the high-frequency signal pattern 43 is formed on the first surface 38a of the second substrate body 38 located outside the end of the second metal film 41 arranged in the Y direction. Is provided.
  • the pair of high-frequency signal patterns 43 are arranged so as to sandwich the second metal film 41 in the Y direction. Further, the pair of high frequency signal patterns 43 are separated from the second metal film 41 in the Y direction.
  • the pair of high frequency signal patterns 43 are metal patterns extending in the Y direction.
  • a high-frequency signal is input to one pattern, and a high-frequency signal that has passed through the filter pattern 23 is output from the other pattern.
  • the high-frequency signal pattern 43 can be formed using, for example, the same metal film as the metal film constituting the second metal film 41.
  • the solder resist 44 exposes the upper surface of the second metal film 41 and the upper surface of the high-frequency signal pattern 43, and is formed on the second substrate body 38 on which the second metal film 41 and the high-frequency signal pattern 43 are not formed. It arrange
  • the third metal film 45 is a film that constitutes a part of the waveguide, and is disposed so as to cover the surface 38 c of the second substrate body 38.
  • the third metal film 45 for example, the same type of metal film as the second metal film 41 can be used.
  • the thickness of the third metal film 45 is very small compared to the width W ⁇ b> 2 of the through portion 51.
  • a plurality of through electrodes 46 are provided so as to penetrate the second substrate body 38 located at both ends of the second metal film 41 in the Y direction.
  • One end of each of the plurality of through electrodes 46 is connected to the second metal film 41, and the other end is exposed from the second surface 38 b of the second substrate body 38.
  • the other ends of the plurality of through electrodes 46 are in electrical contact with the metal substrate 14 by abutting against the substrate mounting surface 14 a of the metal substrate 14.
  • the second substrate 13 configured as described above is fixed to the metal substrate 14 with screws or the like (not shown).
  • the metal substrate 14 includes a substrate mounting surface 14 a and a recess 55.
  • the substrate placement surface 14a is a flat surface, and the second surface 38b constituting the second substrate 13 is placed thereon.
  • the substrate placement surface 14 a is in contact with the other ends of the plurality of through electrodes 46. Thereby, the metal substrate 14 is electrically connected to the second metal film 41 (in other words, the second substrate 13).
  • the concave portion 55 is provided in a portion of the metal substrate 14 that faces the through portion 51.
  • the length L3 and the width W3 of the recess 55 may be equal to the length L1 and the width W1 of the hollow portion 33.
  • the waveguide constituted by the metal case 17, the third metal film 45, and the recess 55 is provided.
  • the width and length of the tube can be set to predetermined values.
  • the depth D of the recessed part 55 is good to make it equal to the height H1 of the hollow part 33, for example.
  • the filter pattern 23 can be disposed at a substantially intermediate position of the waveguide in the Z direction.
  • the thicknesses of the first substrate 16 and the second substrate 13 are considerably smaller than the height H1 of the hollow portion 33 and the depth D of the recess 55.
  • the filter pattern 23 that functions as a filter is provided on the first surface 21a of the first substrate body 21, so that the filter pattern 23 can be accurately formed using a metal film. Therefore, good filter characteristics can be realized in a high frequency region such as a microwave or millimeter wave band.
  • the first metal film 25 provided on the first substrate body 21 and the first surface 38 a of the second substrate body 38 are electrically connected to the first metal film 25 via the solder 31.
  • the filter component 11 can be surface-mounted on the second substrate 13 using a mounting machine (not shown). Good filter characteristics can be realized in the high frequency region.
  • FIG. 9 is a perspective view of a waveguide filter according to the second embodiment of the present invention.
  • the same components as those shown in FIGS. 1 to 8 are denoted by the same reference numerals.
  • FIG. 10 is an exploded perspective view of the waveguide filter shown in FIG. 10, the same components as those shown in FIGS. 1 to 9 are denoted by the same reference numerals.
  • FIG. 11 is a cross-sectional view of the waveguide filter shown in FIG. 9 in the FF line direction. In FIG. 11, the same components as those shown in FIGS. 9 and 10 are denoted by the same reference numerals.
  • the waveguide filter 60 of the second embodiment replaces the second substrate 13 constituting the waveguide filter 10 of the first embodiment with a second substrate. 61 is provided and has a surface mount component 63. In other respects, the waveguide filter 60 of the second embodiment is configured similarly to the waveguide filter 10.
  • the second substrate 61 includes a pair of pads 65 and 66 and a plurality of wiring patterns (not shown) electrically connected separately from them. Similar to the first embodiment, the second metal film 41 and the high frequency signal pattern 43 are formed on the first surface 38 a of the second substrate body 38. The pair of pads 65 and 66 are provided on the portion where the second metal film 41 and the high-frequency signal pattern 43 are not formed on the first surface 38 a of the second substrate body 38. The pair of pads 65 and 66 can be made of the same metal film as the second metal film 41, for example. A plurality of wiring patterns (not shown) are provided on the first surface 38 a of the second substrate body 38.
  • the surface mount component 63 includes a first electrode 63A and a second electrode 63B.
  • the first electrode 63A is connected to the pad 65 via the solder 31.
  • the second electrode 63B is connected to the pad 66 through the solder 31.
  • the surface mounted component 63 is surface mounted on the second substrate 61.
  • Examples of the surface mounting component 63 include a chip resistor and a chip capacitor.
  • pads 65 and 66 are shown, but a plurality of pads may be provided.
  • a semiconductor chip (not shown) may be surface-mounted as a surface-mounted component on a plurality of pads.
  • the filter component 11 is surface-mounted on the second metal film 41 of the second substrate 61, and the surface-mounted component 63 is mounted on the second substrate 61. Since it can be mounted on the pair of pads 65 and 66, the manufacturing process of the waveguide filter 60 can be simplified. Thereby, the manufacturing cost of the waveguide filter 60 can be reduced.
  • the waveguide filter 60 of 2nd Embodiment can acquire the effect similar to the waveguide filter 10 of 1st Embodiment demonstrated previously.
  • FIG. 12 is a graph showing the relationship between frequency, insertion loss, and return loss.
  • the horizontal axis indicates the frequency (GHz) value
  • the vertical axis indicates the insertion loss (dB) or return loss (dB) value.
  • the second substrate 13 R04350, which is a substrate made by Rogers with a thickness of 0.25 mm, was used. At this time, the length of the second substrate 13 was 60 mm, and the width of the second substrate 13 was 8.6 mm. The width W1 of the hollow portion 33 is 4.3 mm, and the height H1 of the hollow portion 33 is 4.3 mm. The depth of the recess 55 was 4.5 mm, and the width of the recess 55 was 4.5 mm.
  • the pass band of the filter component 11 is a high frequency band between 27.5 GHz and 29.0 GHz. From this result, it was confirmed that the filter component 11 was able to realize good filter characteristics in the high frequency band of 27.5 GHz to 29.0 GHz.
  • the present invention can be applied to a waveguide filter, and according to the present invention, it is possible to provide a waveguide filter having good filter characteristics in a high frequency region.

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Abstract

A waveguide filter according to the present invention is provided with: a filter component provided with a first substrate including a filter pattern provided on a first surface of a first substrate body and a first metal film disposed on the outer peripheral portion of a second surface of the first substrate body and a metal case that delimits a hollow section, that is open at a side facing the filter pattern, and that is provided on the first surface side; a second substrate including a second metal film that is provided, on a first surface of a second substrate body having a through-hole facing the hollow section, around the through-hole and that is electrically connected to the first metal film with solder therebetween; and a metal substrate that is electrically connected to the second metal film and that has a recessed section at a portion facing the through-hole.

Description

導波管フィルタWaveguide filter

 本発明は、導波管フィルタに関する。 The present invention relates to a waveguide filter.

 マイクロ波やミリ波帯で高周波回路を構成するマイクロ波回路(以下、単に「MIC(Microwave Integrated Circuit)」という)は、特定の周波数に特化した専用パッケージに、ミキサやアンプ等の半導体デバイスとセラミック基板とを設けることで高周波モジュールを構成している。
 MICには、専用の高価な高周波パッケージが必要である。高周波パッケージは、制御回路等を含むプリント基板(以下、単に「基板」という)に対して手作業ではんだ付けされている。このため、MICを備えた無線通信装置は、高価であった。
A microwave circuit (hereinafter simply referred to as “MIC (Microwave Integrated Circuit)”) that constitutes a high-frequency circuit in the microwave or millimeter wave band is a dedicated package specialized for a specific frequency, and a semiconductor device such as a mixer or an amplifier. A high frequency module is configured by providing a ceramic substrate.
The MIC requires a dedicated and expensive high frequency package. The high-frequency package is manually soldered to a printed circuit board (hereinafter simply referred to as “substrate”) including a control circuit and the like. For this reason, the wireless communication device provided with the MIC is expensive.

 近年、無線通信装置を低コスト化することが望まれている。このため、高周波領域で使用される無線通信装置においても周波数変換器や増幅器等のキーデバイスの表面実装化(SMT(Surface mount technology)化)が進展している。
 このような表面実装タイプのデバイスを用いて高周波回路を構成する場合、通常、回路を含んだ基板(例えば、ロジャース基板)上に、回路パターンを用いて不要波を抑制するフィルタを形成している。
In recent years, it has been desired to reduce the cost of wireless communication devices. For this reason, surface mounting (SMT (Surface mount technology)) of key devices such as frequency converters and amplifiers is also progressing in wireless communication devices used in a high frequency region.
When configuring a high-frequency circuit using such a surface-mount type device, a filter that suppresses unnecessary waves is usually formed on a substrate (for example, a Rogers substrate) including the circuit using a circuit pattern. .

 しかしながら、一般的に、基板上への回路パターンの形成精度が低い。このため、上述したフィルタの形成方法は、高精度な不要波抑制機能を有するフィルタの形成方法として不向きであった。
 そこで、関連する技術においては、高精度の不要波抑制可能なフィルタが必要な場合、フィルタとして導波管フィルタが用いられている。
However, generally, the formation accuracy of the circuit pattern on the substrate is low. For this reason, the above-described filter forming method is not suitable as a filter forming method having a highly accurate unnecessary wave suppressing function.
Therefore, in a related technique, when a highly accurate filter capable of suppressing unnecessary waves is required, a waveguide filter is used as a filter.

 特許文献1には、導波管の内部に波の進行方向と垂直な断面を絞る金属製の仕切り板を含む導波管フィルタが開示されている。
 また、特許文献1には、波の進行方向と平行な面が開口していて内部に当該面と平行な絞り方向の仕切り板を含む箱型の部品と、導体を用いてフィルタ外部との入出力端を形成した基板とを別体として用意し、当該部品の開口面と当該基板の入出力端を形成した面とが対向するように当該部品と当該基板とを接合することが開示されている。
Patent Document 1 discloses a waveguide filter including a metal partition plate that narrows a cross section perpendicular to a wave traveling direction inside a waveguide.
Further, Patent Document 1 discloses that a box-shaped part including a partition plate in a drawing direction parallel to the surface in which a plane parallel to the wave traveling direction is open, and an outside of the filter using a conductor. It is disclosed that a substrate on which an output end is formed is prepared as a separate body, and that the component and the substrate are bonded so that the opening surface of the component and the surface on which the input / output end of the substrate is formed face each other. Yes.

特開2002-111312号公報Japanese Patent Laid-Open No. 2002-113112

 ところで、マイクロ波やミリ波帯等の高周波領域において、特許文献1に記載の導波管フィルタを使用する場合、金属製の箱型の部品を高い精度で加工する必要があった。
 しかしながら、金属製の箱型の部品を高い精度で加工することは、技術的に困難であるとともに、煩雑であるため、マイクロ波やミリ波帯等の高周波領域において、良好な特性を有する導波管フィルタを実現できないという問題があった。
By the way, when the waveguide filter described in Patent Document 1 is used in a high frequency region such as a microwave or a millimeter wave band, it is necessary to process a metal box-shaped component with high accuracy.
However, since it is technically difficult and complicated to process metal box-shaped parts with high accuracy, a waveguide having good characteristics in a high-frequency region such as a microwave or a millimeter wave band. There was a problem that a tube filter could not be realized.

 本発明の目的は、上述した課題を鑑み、高周波領域において、良好なフィルタ特性を有する導波管フィルタを提供することにある。 An object of the present invention is to provide a waveguide filter having good filter characteristics in a high frequency region in view of the above-described problems.

 上記課題を解決するため、本発明の一態様に係る導波管フィルタは、第1の基板本体と前記第1の基板本体の第1の面に設けられたフィルタ用パターンと前記第1の面の反対側に位置する前記第1の基板本体の第2の面の外周部に配置された第1の金属膜とを含む第1の基板と、一方向に延在する中空部を区画しており前記フィルタ用パターンと対向する側が開放され前記第1の基板本体の第1の面側に設けられた金属ケースと、を備えたフィルタ部品と、前記第1の基板を介して前記中空部と対向する部分に貫通部を有する第2の基板本体と、前記第2の基板本体の第1の面のうち前記貫通部の周囲に設けられ前記第1の金属膜とはんだを介して電気的に接続される第2の金属膜と、を含む第2の基板と、前記第2の基板本体の第1の面の反対側に位置する前記第2の基板本体の第2の面が載置される基板載置面を含み前記第2の金属膜と電気的に接続されておりかつ前記貫通部と対向する部分に凹部を有する金属基板と、を有する。 In order to solve the above problems, a waveguide filter according to an aspect of the present invention includes a first substrate body, a filter pattern provided on a first surface of the first substrate body, and the first surface. A first substrate including a first metal film disposed on an outer peripheral portion of the second surface of the first substrate body located on the opposite side of the first substrate body, and a hollow portion extending in one direction, A filter case comprising: a metal case provided on a first surface side of the first substrate body, the side facing the filter pattern being open; and the hollow portion via the first substrate; A second substrate body having a penetrating portion in an opposing portion; and electrically provided through the first metal film and solder provided around the through portion of the first surface of the second substrate body. A second substrate including a second metal film to be connected; and a first surface of the second substrate body. A portion that includes a substrate placement surface on which the second surface of the second substrate body located on the opposite side is placed, is electrically connected to the second metal film, and is opposed to the penetrating portion. And a metal substrate having a recess.

 本発明の導波管フィルタによれば、第1の基板本体の第1の面にフィルタとして機能するフィルタ用パターンを設けることで、金属膜を用いて精度良くフィルタ用パターンを形成することが可能となる、すなわち、関連する技術で行っていた金属加工が不要となるので、高周波領域において、良好なフィルタ特性を実現することができる。
 また、第1の基板本体に設けられた第1の金属膜と、第2の基板本体の第1の面に設けられ、第1の金属膜とはんだを介して電気的に接続される第2の金属膜とを設けることで、実装機を用いてフィルタ部品を第2の基板に対して高い位置精度で表面実装することが可能となるので、高周波領域において、良好なフィルタ特性を実現することができる。
According to the waveguide filter of the present invention, it is possible to accurately form a filter pattern using a metal film by providing a filter pattern that functions as a filter on the first surface of the first substrate body. In other words, since the metal processing that has been performed by the related technique is not required, good filter characteristics can be realized in the high frequency region.
The first metal film provided on the first substrate body and the second metal film provided on the first surface of the second substrate body and electrically connected to the first metal film via solder. By providing a metal film, it is possible to surface-mount the filter component with high positional accuracy on the second substrate using a mounting machine, so that good filter characteristics can be realized in the high frequency region. Can do.

本発明の第1の実施形態に係る導波管フィルタを示す斜視図である。1 is a perspective view showing a waveguide filter according to a first embodiment of the present invention. 図1に示された導波管フィルタを示す分解斜視図である。FIG. 2 is an exploded perspective view showing the waveguide filter shown in FIG. 1. 図2に示された第1の基板の上面(表面)を示す平面図である。FIG. 3 is a plan view showing an upper surface (front surface) of the first substrate shown in FIG. 2. 図2に示された第1の基板の下面(裏面)を示す平面図である。It is a top view which shows the lower surface (back surface) of the 1st board | substrate shown by FIG. 図2のC-C線に沿った第1の基板の断面図である。FIG. 3 is a cross-sectional view of the first substrate along the line CC in FIG. 2. 図1のA-A線に沿った導波管フィルタの断面図である。FIG. 2 is a cross-sectional view of the waveguide filter along the line AA in FIG. 1. 図2に示された第2の基板を示す平面図である。FIG. 3 is a plan view showing a second substrate shown in FIG. 2. 図7のE-E線に沿った第2の基板の断面図である。FIG. 8 is a cross-sectional view of the second substrate along the line EE in FIG. 7. 本発明の第2の実施形態に係る導波管フィルタを示す斜視図である。It is a perspective view which shows the waveguide filter which concerns on the 2nd Embodiment of this invention. 図9に示された導波管フィルタを示す分解斜視図である。FIG. 10 is an exploded perspective view showing the waveguide filter shown in FIG. 9. 図9のF-F線に沿った導波管フィルタの断面図である。FIG. 10 is a cross-sectional view of the waveguide filter taken along line FF in FIG. 9. 図1に示された導波管フィルタにおける周波数とインサーションロス及びリターンロスとの関係を示すグラフである。It is a graph which shows the relationship between the frequency in the waveguide filter shown by FIG. 1, an insertion loss, and a return loss.

 以下、図面を参照して本発明を適用した実施形態について詳細に説明する。なお、以下の説明で用いる図面は、本発明の実施形態の構成を説明するためのものであり、図示される各部の大きさや厚さや寸法等は、実際の導波管フィルタの寸法関係とは異なる場合がある。 Hereinafter, an embodiment to which the present invention is applied will be described in detail with reference to the drawings. The drawings used in the following description are for explaining the configuration of the embodiment of the present invention, and the size, thickness, dimension, etc. of each part shown in the figure are the dimensional relationships of the actual waveguide filter. May be different.

 (第1の実施形態)
 図1は、本発明の第1の実施形態に係る導波管フィルタの斜視図である。図2は、図1に示す導波管フィルタを分解した斜視図である。
 図1および図2を参照すると、第1の実施形態の導波管フィルタ10は、フィルタ部品11と、第2の基板13と、金属基板14とを有する。
 図1および図2において、X方向は中空部33の幅方向、Y方向は中空部33の延在方向(長さ方向)、Z方向はXY平面内方向に対して直交する方向(第1の基板16及び第2の基板13の厚さ方向、或いは中空部33の高さ方向)をそれぞれ示している。
(First embodiment)
FIG. 1 is a perspective view of a waveguide filter according to a first embodiment of the present invention. FIG. 2 is an exploded perspective view of the waveguide filter shown in FIG.
Referring to FIGS. 1 and 2, the waveguide filter 10 of the first embodiment includes a filter component 11, a second substrate 13, and a metal substrate 14.
1 and 2, the X direction is the width direction of the hollow portion 33, the Y direction is the extending direction (length direction) of the hollow portion 33, and the Z direction is a direction orthogonal to the XY plane direction (first direction) The thickness direction of the board | substrate 16 and the 2nd board | substrate 13, or the height direction of the hollow part 33) is each shown.

 図2において、符号Bはフィルタ用パターン23が形成される第1の基板本体21の領域(以下、「領域B」という)、符号L1は中空部33の長さ(以下、「長さL1」という)、符号H1は中空部33の高さ(以下、「高さH1」という)、符号W1は中空部33の幅(以下、「幅W1」という)をそれぞれ示している。図2において、図1に示す構成と同一構成部分には、同一符号を付す。 In FIG. 2, a symbol B is a region (hereinafter referred to as “region B”) of the first substrate body 21 where the filter pattern 23 is formed, and a symbol L1 is a length of the hollow portion 33 (hereinafter “length L1”). The symbol H1 indicates the height of the hollow portion 33 (hereinafter referred to as “height H1”), and the symbol W1 indicates the width of the hollow portion 33 (hereinafter referred to as “width W1”). In FIG. 2, the same components as those shown in FIG.

 図3は、図2に示す第1の基板の上面側(表面側)の平面図である。図3において、図2に示す構造体と同一構成部分には同一符号を付す。
 図4は、図2に示す第1の基板の下面側(裏面側)の平面図である。図4において、図2及び図3に示す構造体と同一構成部分には同一符号を付す。
 図5は、図2に示す第1の基板をC-C線で切断した断面図である。図5において、図3及び図4に示す構造体と同一構成部分には、同一符号を付す。
FIG. 3 is a plan view of the upper surface side (front surface side) of the first substrate shown in FIG. In FIG. 3, the same components as those of the structure shown in FIG.
FIG. 4 is a plan view of the lower surface side (back surface side) of the first substrate shown in FIG. 4, the same components as those shown in FIGS. 2 and 3 are denoted by the same reference numerals.
FIG. 5 is a cross-sectional view of the first substrate shown in FIG. 2 taken along the line CC. In FIG. 5, the same components as those shown in FIGS. 3 and 4 are denoted by the same reference numerals.

 図6は、図1に示す導波管フィルタをA-A線で切断した断面図である。図6に示す導波管フィルタ10の切断位置(C-C線)は、図2に示す第1の基板16の切断位置(図2に示すC-C線)に対応している。図6において、図1~図5に示す構造体と同一構成部分には同一符号を付す。 FIG. 6 is a cross-sectional view of the waveguide filter shown in FIG. 1 cut along line AA. The cutting position (CC line) of the waveguide filter 10 shown in FIG. 6 corresponds to the cutting position (CC line shown in FIG. 2) of the first substrate 16 shown in FIG. In FIG. 6, the same components as those shown in FIGS. 1 to 5 are denoted by the same reference numerals.

 図1~図6を参照するに、フィルタ部品11は、第1の基板16と、金属ケース17と、を有する。
 第1の基板16は、第1の基板本体21と、フィルタ用パターン23と、マイクロストリップ用パターン24と、第1の金属膜25(図4)と、貫通電極27(図3および図4)と、を有する。
With reference to FIGS. 1 to 6, the filter component 11 includes a first substrate 16 and a metal case 17.
The first substrate 16 includes a first substrate body 21, a filter pattern 23, a microstrip pattern 24, a first metal film 25 (FIG. 4), and a through electrode 27 (FIGS. 3 and 4). And having.

 第1の基板本体21は、Y方向に延在する絶縁基板である。第1の基板本体21は、第1の面21aと、第2の面21bと、を有する。
 第1の面21aは、金属ケース17が配置される側の面である。第2の面21bは、第1の面21aの反対側に配置された面である。第2の面21bは、第2の基板13が配置される側の面である。
 第1の基板本体21の厚さは、例えば、金属ケース17によって形成される中空部33の高さH1より小さくするとよい。
 このように、第1の基板本体21の厚さを中空部33の高さH1よりも小さくすることで、高周波信号が移動する際に第1の基板本体21の静電誘導作用が障害となることを抑制することができる。
 第1の基板本体21の誘電率は、例えば、5以下であることが好ましい。
The first substrate body 21 is an insulating substrate extending in the Y direction. The first substrate body 21 has a first surface 21a and a second surface 21b.
The first surface 21a is a surface on the side where the metal case 17 is disposed. The second surface 21b is a surface disposed on the opposite side of the first surface 21a. The second surface 21b is a surface on the side where the second substrate 13 is disposed.
For example, the thickness of the first substrate body 21 may be smaller than the height H1 of the hollow portion 33 formed by the metal case 17.
Thus, by making the thickness of the first substrate body 21 smaller than the height H1 of the hollow portion 33, the electrostatic induction action of the first substrate body 21 becomes an obstacle when the high-frequency signal moves. This can be suppressed.
The dielectric constant of the first substrate body 21 is preferably 5 or less, for example.

 図3~図5により詳細に示されるように、フィルタ用パターン23は、第1の基板本体21の中央部に配置された領域Bで囲まれた第1の基板本体21の第1の面21aに設けられている。
 フィルタ用パターン23は、例えば、金属膜を成膜することで形成することが可能である。フィルタ用パターン23を構成する金属膜としては、例えば、めっき膜(例えば、Auめっき膜やAgめっき膜等)を用いることが可能である。
As shown in more detail in FIGS. 3 to 5, the filter pattern 23 is formed on the first surface 21 a of the first substrate body 21 surrounded by the region B arranged at the center of the first substrate body 21. Is provided.
The filter pattern 23 can be formed, for example, by forming a metal film. As the metal film constituting the filter pattern 23, for example, a plating film (for example, an Au plating film or an Ag plating film) can be used.

 マイクロストリップ用パターン24は、Y方向における領域Bの両側に位置する第1の基板本体21の第1の面21aに設けられている。マイクロストリップ用パターン24は、フィルタ用パターン23と接続されることで、フィルタ用パターン23と電気的に接続されている。マイクロストリップ用パターン24は、フィルタ用パターン23を構成する金属膜と同様な金属膜で構成することが可能である。 The microstrip pattern 24 is provided on the first surface 21a of the first substrate body 21 located on both sides of the region B in the Y direction. The microstrip pattern 24 is electrically connected to the filter pattern 23 by being connected to the filter pattern 23. The microstrip pattern 24 can be formed of a metal film similar to the metal film that forms the filter pattern 23.

 第1の金属膜25は、第1の基板本体21の第2の面21bの外周部に配置されている。第1の金属膜25としては、はんだ31を載置可能な金属膜(例えば、Auめっき膜やAgめっき膜等)を用いる。
 さらに図6を参照すると、第1の金属膜25の一面25a(第2の基板13と対向する面)には、はんだ31が設けられている。第1の金属膜25は、はんだ31を介して、第2の基板13と電気的に接続されている。
The first metal film 25 is disposed on the outer peripheral portion of the second surface 21 b of the first substrate body 21. As the first metal film 25, a metal film (for example, an Au plating film or an Ag plating film) on which the solder 31 can be placed is used.
Further, referring to FIG. 6, solder 31 is provided on one surface 25 a of the first metal film 25 (a surface facing the second substrate 13). The first metal film 25 is electrically connected to the second substrate 13 via the solder 31.

 貫通電極27は、第1の基板本体21の幅方向(X方向)の両側に、Y方向に延在して複数配置されている。貫通電極27は、第1の基板本体21を貫通している。貫通電極27は、一端がフィルタ用パターン23又はマイクロストリップ用パターン24と接続されており、他端が第1の金属膜25と接続されている。
 これにより、貫通電極27は、フィルタ用パターン23及びマイクロストリップ用パターン24と第1の金属膜25と電気的に接続している。
 貫通電極27は、例えば、第1の金属膜25と同様な金属膜で構成することが可能である。
A plurality of through electrodes 27 are arranged to extend in the Y direction on both sides in the width direction (X direction) of the first substrate body 21. The through electrode 27 passes through the first substrate body 21. The through electrode 27 has one end connected to the filter pattern 23 or the microstrip pattern 24 and the other end connected to the first metal film 25.
Accordingly, the through electrode 27 is electrically connected to the filter pattern 23 and the microstrip pattern 24 and the first metal film 25.
The through electrode 27 can be made of a metal film similar to the first metal film 25, for example.

 図1、図2および図6を参照すると、金属ケース17は、U字形状とされており、一方向(この場合、Y方向)に延在している。金属ケース17は、その内側において、一方向に延在する中空部33を区画している。中空部33の形状は、例えば、四角柱とすることが可能である。
 図6に最もよく示されるように、金属ケース17は、フィルタ用パターン23及びマイクロストリップ用パターン24と対向する側に開放端17Aを有する。
Referring to FIGS. 1, 2, and 6, the metal case 17 is U-shaped and extends in one direction (in this case, the Y direction). The metal case 17 defines a hollow portion 33 extending in one direction on the inner side. The shape of the hollow portion 33 can be, for example, a quadrangular prism.
As best shown in FIG. 6, the metal case 17 has an open end 17 </ b> A on the side facing the filter pattern 23 and the microstrip pattern 24.

 金属ケース17は、開放端17A側にY方向に延在する一対の接続部35を有する。一対の接続部35は、第1の基板本体21の第1の面21a側に配置されたフィルタ用パターン23及びマイクロストリップ用パターン24と接合されている。
 これにより、金属ケース17は、第1の基板16及び第2の基板13と電気的に接続されている。
 上記構成とされた金属ケース17は、導波管フィルタ10の導波管の上部を構成している。
The metal case 17 has a pair of connecting portions 35 extending in the Y direction on the open end 17A side. The pair of connection portions 35 are joined to the filter pattern 23 and the microstrip pattern 24 arranged on the first surface 21 a side of the first substrate body 21.
Thereby, the metal case 17 is electrically connected to the first substrate 16 and the second substrate 13.
The metal case 17 configured as described above constitutes the upper part of the waveguide of the waveguide filter 10.

 図7は、図2に示された第2の基板の平面図である。図7において、図1、図2、及び図6に示す構造体と同一構成部分には、同一符号を付す。なお、図1、図2、及び図7では、XY平面内方向に延在する第2の基板13の一部のみ図示している。
 図8は、図7に示す第2の基板をE-E線で切断した断面図である。図8において、図7に示す構造体と同一構成部分には、同一符号を付す。
FIG. 7 is a plan view of the second substrate shown in FIG. In FIG. 7, the same components as those shown in FIGS. 1, 2, and 6 are denoted by the same reference numerals. 1, 2, and 7, only a part of the second substrate 13 extending in the XY plane direction is shown.
FIG. 8 is a cross-sectional view of the second substrate shown in FIG. 7 cut along the line EE. In FIG. 8, the same components as those in the structure shown in FIG.

 図1、図2、及び図6~図8を参照するに、第2の基板13は、第2の基板本体38と、第2の金属膜41と、一対の高周波信号用パターン43と、ソルダーレジスト44と、第3の金属膜45と、貫通電極46と、を有する。 Referring to FIGS. 1, 2, and 6 to 8, the second substrate 13 includes a second substrate body 38, a second metal film 41, a pair of high frequency signal patterns 43, and a solder. A resist 44, a third metal film 45, and a through electrode 46 are included.

 図8に最もよく示されるように、第2の基板本体38は、XY平面内方向に延在する絶縁基板である。第2の基板本体38は、第1の面38aと、第2の面38bと、貫通部51と、を有する。
 第1の面38aは、金属ケース17が配置される側の面である。第2の面38bは、第1の面38aの反対側に配置された面である。第2の面38bは、第2の基板13が配置される側の面である。
 図6に示されるように、貫通部51は、第1の基板16を介して、中空部33と対向する第2の基板本体38を貫通している。貫通部51は、第2の基板本体38の面38c(導波管の一部を構成する第3の金属膜45が形成される面)で区画されている。貫通部51は、平面視矩形とされており、Y方向に延在している。
As best shown in FIG. 8, the second substrate body 38 is an insulating substrate extending in the XY plane. The second substrate main body 38 has a first surface 38 a, a second surface 38 b, and a through portion 51.
The first surface 38a is a surface on the side where the metal case 17 is disposed. The second surface 38b is a surface disposed on the opposite side of the first surface 38a. The second surface 38b is a surface on the side where the second substrate 13 is disposed.
As shown in FIG. 6, the penetrating portion 51 penetrates the second substrate main body 38 facing the hollow portion 33 through the first substrate 16. The penetrating portion 51 is defined by a surface 38c of the second substrate body 38 (a surface on which the third metal film 45 constituting a part of the waveguide is formed). The penetrating portion 51 is rectangular in plan view and extends in the Y direction.

 貫通部51の幅W2は、中空部33の幅W1と等しい。また、貫通部51の長さL2は、中空部33の長さL1と等しい。
 このように、貫通部51の長さL2及び幅W2を中空部33の長さL1及び幅W1と等しく構成することで、導波管のうち、金属ケース17及び第3の金属膜45で区画された部分の長さ及び幅を所定の値にすることができる。
The width W2 of the penetrating part 51 is equal to the width W1 of the hollow part 33. Further, the length L <b> 2 of the penetrating part 51 is equal to the length L <b> 1 of the hollow part 33.
Thus, the length L2 and the width W2 of the penetrating portion 51 are configured to be equal to the length L1 and the width W1 of the hollow portion 33, so that the waveguide is partitioned by the metal case 17 and the third metal film 45. The length and width of the formed portion can be set to predetermined values.

 第2の金属膜41は、第2の基板本体38の第1の面38aのうち、貫通部51の周囲に設けられている。第2の金属膜41の上面には、はんだ31が配置されている。第2の金属膜41は、はんだ31を介して、第1の金属膜25と電気的に接続されている。これにより、第2の金属膜41は、第1の基板16及び金属ケース17と電気的に接続されている。
 第2の金属膜41としては、例えば、第1の金属膜25と同様な金属膜を用いることが可能である。
The second metal film 41 is provided around the through portion 51 in the first surface 38 a of the second substrate body 38. A solder 31 is disposed on the upper surface of the second metal film 41. The second metal film 41 is electrically connected to the first metal film 25 via the solder 31. Thereby, the second metal film 41 is electrically connected to the first substrate 16 and the metal case 17.
As the second metal film 41, for example, a metal film similar to the first metal film 25 can be used.

 図7に最もよく示されるように、高周波信号用パターン43は、Y方向に配置された第2の金属膜41の端部の外側に位置する第2の基板本体38の第1の面38aに設けられている。一対の高周波信号用パターン43は、Y方向において、第2の金属膜41を挟み込むように配置されている。また、一対の高周波信号用パターン43は、Y方向において、第2の金属膜41から離間している。
 一対の高周波信号用パターン43は、Y方向延在する金属パターンである。一対の高周波信号用パターン43のうち、一方のパターンには、高周波信号が入力され、他方のパターンから、フィルタ用パターン23を通過した高周波信号が出力される。
 高周波信号用パターン43は、例えば、第2の金属膜41を構成する金属膜と同じ金属膜を用いて形成することが可能である。
As best shown in FIG. 7, the high-frequency signal pattern 43 is formed on the first surface 38a of the second substrate body 38 located outside the end of the second metal film 41 arranged in the Y direction. Is provided. The pair of high-frequency signal patterns 43 are arranged so as to sandwich the second metal film 41 in the Y direction. Further, the pair of high frequency signal patterns 43 are separated from the second metal film 41 in the Y direction.
The pair of high frequency signal patterns 43 are metal patterns extending in the Y direction. Of the pair of high-frequency signal patterns 43, a high-frequency signal is input to one pattern, and a high-frequency signal that has passed through the filter pattern 23 is output from the other pattern.
The high-frequency signal pattern 43 can be formed using, for example, the same metal film as the metal film constituting the second metal film 41.

 ソルダーレジスト44は、第2の金属膜41の上面、及び高周波信号用パターン43の上面を露出し、第2の金属膜41及び高周波信号用パターン43が形成されていない第2の基板本体38の第1の面38aを覆うように配置されている。 The solder resist 44 exposes the upper surface of the second metal film 41 and the upper surface of the high-frequency signal pattern 43, and is formed on the second substrate body 38 on which the second metal film 41 and the high-frequency signal pattern 43 are not formed. It arrange | positions so that the 1st surface 38a may be covered.

 図6に示されるように、第3の金属膜45は、導波管の一部を構成する膜であり、第2の基板本体38の面38cを覆うように配置されている。
 第3の金属膜45としては、例えば、第2の金属膜41と同じ種類の金属膜を用いることが可能である。
 第3の金属膜45の厚さは、貫通部51の幅W2と比較して非常に小さい。
As shown in FIG. 6, the third metal film 45 is a film that constitutes a part of the waveguide, and is disposed so as to cover the surface 38 c of the second substrate body 38.
As the third metal film 45, for example, the same type of metal film as the second metal film 41 can be used.
The thickness of the third metal film 45 is very small compared to the width W <b> 2 of the through portion 51.

 図7を参照すると、貫通電極46は、Y方向における第2の金属膜41の両端部に位置する第2の基板本体38を貫通するように複数設けられている。複数の貫通電極46は、一端が第2の金属膜41と接続されており、他端が第2の基板本体38の第2の面38bから露出されている。
 複数の貫通電極46の他端は、金属基板14の基板載置面14aに当接されることで、金属基板14と電気的に接続される。
 上記構成とされた第2の基板13は、図示していないネジ等により、金属基板14に固定されている。
Referring to FIG. 7, a plurality of through electrodes 46 are provided so as to penetrate the second substrate body 38 located at both ends of the second metal film 41 in the Y direction. One end of each of the plurality of through electrodes 46 is connected to the second metal film 41, and the other end is exposed from the second surface 38 b of the second substrate body 38.
The other ends of the plurality of through electrodes 46 are in electrical contact with the metal substrate 14 by abutting against the substrate mounting surface 14 a of the metal substrate 14.
The second substrate 13 configured as described above is fixed to the metal substrate 14 with screws or the like (not shown).

 図1、図2、及び図6を参照するに、金属基板14は、基板載置面14aと、凹部55と、を有する。基板載置面14aは平面であり、第2の基板13を構成する第2の面38bが載置されている。基板載置面14aは、複数の貫通電極46の他端と接触している。
 これにより、金属基板14は、第2の金属膜41(言い換えれば、第2の基板13)と電気的に接続されている。
With reference to FIGS. 1, 2, and 6, the metal substrate 14 includes a substrate mounting surface 14 a and a recess 55. The substrate placement surface 14a is a flat surface, and the second surface 38b constituting the second substrate 13 is placed thereon. The substrate placement surface 14 a is in contact with the other ends of the plurality of through electrodes 46.
Thereby, the metal substrate 14 is electrically connected to the second metal film 41 (in other words, the second substrate 13).

 凹部55は、金属基板14のうち、貫通部51と対向する部分に設けられている。凹部55の長さL3及び幅W3は、例えば、中空部33の長さL1及び幅W1と等しくするとよい。
 このように、凹部55の長さL3及び幅W3を中空部33の長さL1及び幅W1と等しくすることで、金属ケース17、第3の金属膜45、及び凹部55で構成される導波管の幅及び長さを所定の値にすることができる。
The concave portion 55 is provided in a portion of the metal substrate 14 that faces the through portion 51. For example, the length L3 and the width W3 of the recess 55 may be equal to the length L1 and the width W1 of the hollow portion 33.
Thus, by making the length L3 and width W3 of the recess 55 equal to the length L1 and width W1 of the hollow portion 33, the waveguide constituted by the metal case 17, the third metal film 45, and the recess 55 is provided. The width and length of the tube can be set to predetermined values.

 また、凹部55の深さDは、例えば、中空部33の高さH1と等しくするとよい。これにより、Z方向において導波管の略中間位置にフィルタ用パターン23を配置することができる。
 なお、第1の基板16及び第2の基板13の厚さは、中空部33の高さH1及び凹部55の深さDと比較してかなり小さい。
Moreover, the depth D of the recessed part 55 is good to make it equal to the height H1 of the hollow part 33, for example. Thereby, the filter pattern 23 can be disposed at a substantially intermediate position of the waveguide in the Z direction.
The thicknesses of the first substrate 16 and the second substrate 13 are considerably smaller than the height H1 of the hollow portion 33 and the depth D of the recess 55.

 第1の実施形態の導波管フィルタ10は、第1の基板本体21の第1の面21aにフィルタとして機能するフィルタ用パターン23を設けることで、金属膜を用いて精度良くフィルタ用パターン23を形成することが可能となるので、マイクロ波やミリ波帯等の高周波領域において、良好なフィルタ特性を実現できる。
 また、第1の基板本体21に設けられた第1の金属膜25と、第2の基板本体38の第1の面38aに設けられ、はんだ31を介して、第1の金属膜25と電気的に接続される第2の金属膜41とを設けることで、実装機(図示せず)を用いて、フィルタ部品11を第2の基板13に対して表面実装することが可能となるので、上記高周波領域において、良好なフィルタ特性を実現できる。
In the waveguide filter 10 of the first embodiment, the filter pattern 23 that functions as a filter is provided on the first surface 21a of the first substrate body 21, so that the filter pattern 23 can be accurately formed using a metal film. Therefore, good filter characteristics can be realized in a high frequency region such as a microwave or millimeter wave band.
The first metal film 25 provided on the first substrate body 21 and the first surface 38 a of the second substrate body 38 are electrically connected to the first metal film 25 via the solder 31. By providing the second metal film 41 to be connected to the filter, the filter component 11 can be surface-mounted on the second substrate 13 using a mounting machine (not shown). Good filter characteristics can be realized in the high frequency region.

 (第2の実施形態)
 図9は、本発明の第2の実施形態に係る導波管フィルタの斜視図である。図9において、図1~図8に示す構造体と同一構成部分には、同一符号を付す。
 図10は、図9に示す導波管フィルタを分解した斜視図である。図10において、図1~図9に示す構造体と同一構成部分には、同一符号を付す。
 図11は、図9に示す導波管フィルタのF-F線方向の断面図である。図11において、図9及び図10に示す構造体と同一構成部分には、同一符号を付す。
(Second Embodiment)
FIG. 9 is a perspective view of a waveguide filter according to the second embodiment of the present invention. In FIG. 9, the same components as those shown in FIGS. 1 to 8 are denoted by the same reference numerals.
FIG. 10 is an exploded perspective view of the waveguide filter shown in FIG. 10, the same components as those shown in FIGS. 1 to 9 are denoted by the same reference numerals.
FIG. 11 is a cross-sectional view of the waveguide filter shown in FIG. 9 in the FF line direction. In FIG. 11, the same components as those shown in FIGS. 9 and 10 are denoted by the same reference numerals.

 図9~図11を参照するに、第2の実施形態の導波管フィルタ60は、第1の実施形態の導波管フィルタ10を構成する第2の基板13に替えて、第2の基板61が設けられるとともに、表面実装部品63を有する。その他については、第2の実施形態の導波管フィルタ60は、導波管フィルタ10と同様に構成される。 Referring to FIGS. 9 to 11, the waveguide filter 60 of the second embodiment replaces the second substrate 13 constituting the waveguide filter 10 of the first embodiment with a second substrate. 61 is provided and has a surface mount component 63. In other respects, the waveguide filter 60 of the second embodiment is configured similarly to the waveguide filter 10.

 第2の基板61は、一対のパッド65,66と、それらと別々に電気的に接続された複数の配線パターン(図示せず)と、を有する。
 第1の実施形態と同様に、第2の金属膜41及び高周波信号用パターン43は、第2の基板本体38の第1の面38a上に形成される。一対のパッド65,66は、第2の基板本体38の第1の面38a上の第2の金属膜41及び高周波信号用パターン43が形成されていない部分に設けられている。一対のパッド65,66は、例えば、第2の金属膜41と同じ金属膜で構成することが可能である。
 複数の配線パターン(図示せず)は、第2の基板本体38の第1の面38aに設けられている。
The second substrate 61 includes a pair of pads 65 and 66 and a plurality of wiring patterns (not shown) electrically connected separately from them.
Similar to the first embodiment, the second metal film 41 and the high frequency signal pattern 43 are formed on the first surface 38 a of the second substrate body 38. The pair of pads 65 and 66 are provided on the portion where the second metal film 41 and the high-frequency signal pattern 43 are not formed on the first surface 38 a of the second substrate body 38. The pair of pads 65 and 66 can be made of the same metal film as the second metal film 41, for example.
A plurality of wiring patterns (not shown) are provided on the first surface 38 a of the second substrate body 38.

 図11を参照すると、表面実装部品63は、第1の電極63Aと、第2の電極63Bと、を有する。第1の電極63Aは、はんだ31を介して、パッド65と接続されている。第2の電極63Bは、はんだ31を介して、パッド66と接続されている。
 これにより、表面実装部品63は、第2の基板61に対して表面実装されている。
 表面実装部品63としては、例えば、チップ抵抗やチップコンデンサ等を例示することが可能である。
Referring to FIG. 11, the surface mount component 63 includes a first electrode 63A and a second electrode 63B. The first electrode 63A is connected to the pad 65 via the solder 31. The second electrode 63B is connected to the pad 66 through the solder 31.
Thereby, the surface mounted component 63 is surface mounted on the second substrate 61.
Examples of the surface mounting component 63 include a chip resistor and a chip capacitor.

 なお、図10では、一対のパッド65,66のみを図示したが、複数のパッドを設けてもよい。また、複数のパッドに対して、表面実装部品として半導体チップ(図示せず)を表面実装してもよい。 In FIG. 10, only a pair of pads 65 and 66 is shown, but a plurality of pads may be provided. In addition, a semiconductor chip (not shown) may be surface-mounted as a surface-mounted component on a plurality of pads.

 第2の実施形態の導波管フィルタ60によれば、フィルタ部品11を第2の基板61の第2の金属膜41に対して表面実装するとともに、表面実装部品63を第2の基板61の一対のパッド65,66に実装することが可能となるので、導波管フィルタ60の製造工程を簡略化することができる。これにより、導波管フィルタ60の製造コストを低減することができる。
 なお、第2の実施形態の導波管フィルタ60は、先に説明した第1の実施形態の導波管フィルタ10と同様な効果を得ることができる。
According to the waveguide filter 60 of the second embodiment, the filter component 11 is surface-mounted on the second metal film 41 of the second substrate 61, and the surface-mounted component 63 is mounted on the second substrate 61. Since it can be mounted on the pair of pads 65 and 66, the manufacturing process of the waveguide filter 60 can be simplified. Thereby, the manufacturing cost of the waveguide filter 60 can be reduced.
In addition, the waveguide filter 60 of 2nd Embodiment can acquire the effect similar to the waveguide filter 10 of 1st Embodiment demonstrated previously.

 以上、本発明の実施形態について図面を参照して詳述してきたが、具体的な構成は上記実施形態に限られるものではなく、本発明の要旨を逸脱しない範囲の設計等も含まれる。 As described above, the embodiments of the present invention have been described in detail with reference to the drawings. However, the specific configuration is not limited to the above-described embodiments, and includes designs and the like that do not depart from the gist of the present invention.

 (実施例)
 実施例では、図1に示す導波管フィルタ10を用いたシミュレーションにより、28GHz帯における電磁解析を実施した。この電磁解析では、28GHz帯におけるインサーションロス(dB)とリターンロス(dB)との変化を測定した。この結果を図12に示す。
 図12は、周波数とインサーションロス及びリターンロスとの関係を示すグラフである。
 図12では、横軸は周波数(GHz)の数値を示しており、縦軸にインサーションロス(dB)またはリターンロス(dB)の数値を示している。
(Example)
In the example, electromagnetic analysis in the 28 GHz band was performed by simulation using the waveguide filter 10 shown in FIG. In this electromagnetic analysis, changes in insertion loss (dB) and return loss (dB) in the 28 GHz band were measured. The result is shown in FIG.
FIG. 12 is a graph showing the relationship between frequency, insertion loss, and return loss.
In FIG. 12, the horizontal axis indicates the frequency (GHz) value, and the vertical axis indicates the insertion loss (dB) or return loss (dB) value.

 第2の基板13としては、厚さ0.25mmのロジャース社製の基板であるR04350を用いた。このとき、第2の基板13の長さを60mm、第2の基板13の幅を8.6mmとした。また、中空部33の幅W1を4.3mm、中空部33の高さH1を4.3mmとした。凹部55の深さを4.5mm、凹部55の幅を4.5mmとした。 As the second substrate 13, R04350, which is a substrate made by Rogers with a thickness of 0.25 mm, was used. At this time, the length of the second substrate 13 was 60 mm, and the width of the second substrate 13 was 8.6 mm. The width W1 of the hollow portion 33 is 4.3 mm, and the height H1 of the hollow portion 33 is 4.3 mm. The depth of the recess 55 was 4.5 mm, and the width of the recess 55 was 4.5 mm.

 図12を参照するに、フィルタ部品11の通過帯が27.5GHz~29.0GHzの間の高周波帯であることが分かった。この結果から、27.5GHz~29.0GHzの高周波帯において、フィルタ部品11が良好なフィルタ特性を実現できていることが確認できた。 Referring to FIG. 12, it was found that the pass band of the filter component 11 is a high frequency band between 27.5 GHz and 29.0 GHz. From this result, it was confirmed that the filter component 11 was able to realize good filter characteristics in the high frequency band of 27.5 GHz to 29.0 GHz.

 本願は、2016年7月13日に、日本に出願された特願2016-138347号に基づき優先権を主張し、その内容をここに援用する。 This application claims priority based on Japanese Patent Application No. 2016-138347 filed in Japan on July 13, 2016, the contents of which are incorporated herein by reference.

 本発明は、導波管フィルタに適用することができ、本発明によれば、高周波領域において、良好なフィルタ特性を有する導波管フィルタを提供することができる。 The present invention can be applied to a waveguide filter, and according to the present invention, it is possible to provide a waveguide filter having good filter characteristics in a high frequency region.

 10,60 導波管フィルタ
 11 フィルタ部品
 13,61 第2の基板
 14 金属基板
 14a 基板載置面
 16 第1の基板
 17 金属ケース
 17A 開放端
 21 第1の基板本体
 21a,38a 第1の面
 21b,38b 第2の面
 23 フィルタ用パターン
 24 マイクロストリップ用パターン
 25 第1の金属膜
 25a 一面 
 27,46 貫通電極
 31 はんだ
 33 中空部
 35 接続部
 38 第2の基板本体
 38c 面
 41 第2の金属膜
 43 高周波信号用パターン
 44 ソルダーレジスト
 45 第3の金属膜
 51 貫通部
 55 凹部
 63 表面実装部品
 63A 第1の電極
 63B 第2の電極
 65,66 パッド
DESCRIPTION OF SYMBOLS 10,60 Waveguide filter 11 Filter component 13,61 2nd board | substrate 14 Metal substrate 14a Board | substrate mounting surface 16 1st board | substrate 17 Metal case 17A Open end 21 1st board | substrate body 21a, 38a 1st surface 21b , 38b Second surface 23 Filter pattern 24 Microstrip pattern 25 First metal film 25a One surface
27, 46 Through-electrode 31 Solder 33 Hollow part 35 Connection part 38 Second substrate body 38c Surface 41 Second metal film 43 High frequency signal pattern 44 Solder resist 45 Third metal film 51 Through part 55 Recess 63 Surface mount component 63A First electrode 63B Second electrode 65, 66 Pad

Claims (5)

 第1の基板本体と前記第1の基板本体の第1の面に設けられたフィルタ用パターンと前記第1の面の反対側に位置する前記第1の基板本体の第2の面の外周部に配置された第1の金属膜とを含む第1の基板と、一方向に延在する中空部を区画しており前記フィルタ用パターンと対向する側が開放され前記第1の基板本体の第1の面側に設けられた金属ケースと、を備えたフィルタ部品と、
 前記第1の基板を介して前記中空部と対向する部分に貫通部を有する第2の基板本体と、前記第2の基板本体の第1の面のうち前記貫通部の周囲に設けられ前記第1の金属膜とはんだを介して電気的に接続される第2の金属膜と、を含む第2の基板と、
 前記第2の基板本体の第1の面の反対側に位置する前記第2の基板本体の第2の面が載置される基板載置面を含み前記第2の金属膜と電気的に接続されておりかつ前記貫通部と対向する部分に凹部を有する金属基板と、
 を有する導波管フィルタ。
The outer periphery of the first substrate main body, the filter pattern provided on the first surface of the first substrate main body, and the second surface of the first substrate main body located on the opposite side of the first surface The first substrate including the first metal film disposed on the side and the hollow portion extending in one direction is partitioned, the side facing the filter pattern is opened, and the first of the first substrate body is opened. A metal case provided on the surface side of the filter part,
A second substrate body having a penetrating portion in a portion facing the hollow portion via the first substrate; and a first surface of the second substrate body provided around the penetrating portion. A second substrate including a first metal film and a second metal film electrically connected via solder;
A substrate mounting surface on which the second surface of the second substrate body located on the opposite side of the first surface of the second substrate body is placed and electrically connected to the second metal film And a metal substrate having a recess in a portion facing the penetrating portion,
A waveguide filter having:
 前記第1の基板本体の厚さは前記中空部の高さよりも小さい請求項1記載の導波管フィルタ。 The waveguide filter according to claim 1, wherein a thickness of the first substrate body is smaller than a height of the hollow portion.  前記貫通部の長さは前記中空部の長さと等しく、前記貫通部の幅は前記中空部の幅と等しい請求項1または2記載の導波管フィルタ。 3. The waveguide filter according to claim 1, wherein a length of the through portion is equal to a length of the hollow portion, and a width of the through portion is equal to a width of the hollow portion.  前記凹部の長さは前記中空部の長さと等しく、前記凹部の幅は前記中空部の幅と等しく、前記凹部の深さは前記中空部の高さと等しい請求項1ないし3のいずれか1項に記載の導波管フィルタ。 The length of the concave portion is equal to the length of the hollow portion, the width of the concave portion is equal to the width of the hollow portion, and the depth of the concave portion is equal to the height of the hollow portion. A waveguide filter according to 1.  前記第2の金属膜の外側に位置する前記第2の基板本体の第1の面には、パッドが設けられており、前記はんだを介して前記パッドに実装される表面実装部品を有する請求項1ないし4のいずれか1項記載の導波管フィルタ。 The first surface of the second substrate main body located outside the second metal film is provided with a pad, and has a surface mount component mounted on the pad via the solder. 5. The waveguide filter according to any one of 1 to 4.
PCT/JP2017/024642 2016-07-13 2017-07-05 Waveguide filter Ceased WO2018012368A1 (en)

Applications Claiming Priority (2)

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JP2016138347 2016-07-13
JP2016-138347 2016-07-13

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761625A (en) * 1986-06-20 1988-08-02 Rca Corporation Tunable waveguide bandpass filter
US5004993A (en) * 1989-09-19 1991-04-02 The United States Of America As Represented By The Secretary Of The Navy Constricted split block waveguide low pass filter with printed circuit filter substrate
JPH10327002A (en) * 1997-03-26 1998-12-08 Murata Mfg Co Ltd Dielectric resonator, dielectric filter, shared device and communication equipment device
US6573808B1 (en) * 1999-03-12 2003-06-03 Harris Broadband Wireless Access, Inc. Millimeter wave front end
JP2005354698A (en) * 2004-06-09 2005-12-22 Thomson Licensing Fin line type microwave band pass filter
WO2009127253A1 (en) * 2008-04-16 2009-10-22 Telefonaktiebolaget Lm Ericsson (Publ) A waveguide filter arrangement
JP2011009806A (en) * 2009-06-23 2011-01-13 Nec Engineering Ltd Tunable band pass filter

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761625A (en) * 1986-06-20 1988-08-02 Rca Corporation Tunable waveguide bandpass filter
US5004993A (en) * 1989-09-19 1991-04-02 The United States Of America As Represented By The Secretary Of The Navy Constricted split block waveguide low pass filter with printed circuit filter substrate
JPH10327002A (en) * 1997-03-26 1998-12-08 Murata Mfg Co Ltd Dielectric resonator, dielectric filter, shared device and communication equipment device
US6573808B1 (en) * 1999-03-12 2003-06-03 Harris Broadband Wireless Access, Inc. Millimeter wave front end
JP2005354698A (en) * 2004-06-09 2005-12-22 Thomson Licensing Fin line type microwave band pass filter
WO2009127253A1 (en) * 2008-04-16 2009-10-22 Telefonaktiebolaget Lm Ericsson (Publ) A waveguide filter arrangement
JP2011009806A (en) * 2009-06-23 2011-01-13 Nec Engineering Ltd Tunable band pass filter

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