WO2018010151A1 - Preparation method for field effect transistor and field effect transistor - Google Patents

Abstract

A preparation method for a field effect transistor and a field effect transistor, relating to the field of technological development of field effect transistors. The preparation method comprises: forming a source electrode (2), a drain electrode (3) and a two-dimensional material growth template (7) on a non-metal substrate (1); and using gas to grow a two-dimensional material on the two-dimensional material growth template (7), and using the two-dimensional material as a channel (4), wherein the source electrode (2) and the drain electrode (3) are used for catalysing the gas to decompose elements of the two-dimensional material, so that the elements of the two-dimensional material grow on the two-dimensional material growth template (7) to form the channel (4), and at the same time, the gas is used to grow a first transition layer (8) on a surface of the source electrode (2) and grow a second transition layer (9) on a surface of the drain electrode (3). A two-dimensional material acting as a channel (4) may be directly formed during the process of preparing a field effect transistor by means of the catalytic action of a source electrode (2) and a drain electrode (3), thereby omitting the transfer process of the two-dimensional material, and the channel (4) may be connected to the first transition layer (8) and the second transition layer (9) via a chemical bond, thereby reducing contact resistance between the source electrode (2), the drain electrode (3) and the channel (4).

Description

Field effect transistor manufacturing method and field effect transistor Technical field

The invention relates to the field of field effect transistor technology development, in particular to a method for fabricating a field effect transistor and a field effect transistor.

Background technique

Field effect transistors are voltage controlled devices that have been widely used in the microelectronics industry. The field effect transistor includes a gate, a source, a drain, and a channel between the source and the drain. With the continuous development of the microelectronics industry, the size of the field effect transistor is getting smaller and smaller, and the size of the channel has been Entered the submicron and nanoscale range.

The smaller the channel size of the field effect transistor, the more likely the short channel effect occurs, resulting in deterioration of the performance of the field effect transistor. In order to avoid short channel effects, two-dimensional materials are currently used to fabricate the channel of a field effect transistor, and a channel made of a two-dimensional material can avoid short channel effects. At present, the two-dimensional material commonly used is graphene. The flow of making a field effect transistor using graphene is as follows: First, graphene is grown on a metal substrate using a gas containing carbon, as shown in FIG. 1, and then the metal substrate is dissolved. And transferring the remaining graphene A onto the non-metal substrate 1, as shown in FIG. 2, depositing source 2 and drain 3 on the graphene A, and having a gap between the source 2 and the drain 3 and The graphene A between the source 2 and the drain 3 is taken as the channel 4, as shown in FIG. 3, and finally the gate insulating layer 5 and the gate 6 are deposited on the trench 4 to form a field effect transistor.

In the process of implementing the present invention, the inventors have found that the prior art has at least the following problems:

Due to the need to transfer graphene, a two-dimensional material, from a metal substrate to a non-metallic substrate, complex transfer processes inevitably lead to damage, wrinkles, and residual metal and solvent contamination on the two-dimensional material. The material causes the conductivity of graphene to deteriorate.

Summary of the invention

In order to solve the problem that the conductivity of the graphene is deteriorated due to the transfer of graphene and the residual pollutants on the graphene, thereby affecting the performance of the field effect transistor, the embodiment of the invention provides a method for fabricating a field effect transistor And field effect transistors. The technical solution is as follows:

In a first aspect, a method of fabricating a field effect transistor is provided, the method comprising:

Forming a source, a drain, and a two-dimensional material growth template on the non-metal substrate, the two-dimensional material growth template being located between the source and the drain;

Forming a two-dimensional material on the two-dimensional material growth template using a gas, the two-dimensional material as a channel, the channel being electrically connected to the source and the drain, respectively, the gas including a composition An element of a two-dimensional material, the source and the drain for catalyzing the gas to decompose elements of the two-dimensional material during growth of the two-dimensional material, such that elements of the two-dimensional material Growing the two-dimensional material on the two-dimensional material growth template;

A gate insulating layer and a gate are formed on the channel.

In the first aspect, since the source and the drain are formed on the non-metal substrate first, and the two-dimensional material growth template is provided on the non-metal substrate, the atomic arrangement of the two-dimensional material growth template and the atom of the two-dimensional material The arrangement structure is the same or similar. When a gas is used to grow a two-dimensional material, the source and drain metals catalyze the gas to decompose the elements of the two-dimensional material, so that the elements of the two-dimensional material grow with the two-dimensional material growth template as a substrate. Finally, a two-dimensional material is formed as a channel. This method greatly reduces the defects of the grown two-dimensional material, so the conductivity of the two-dimensional material is better, so that it can be directly formed as a channel in the process of fabricating the field effect transistor. The two-dimensional material eliminates the need to first grow a two-dimensional material on a metal substrate and then transfer the two-dimensional material onto a non-metallic substrate, avoiding the two-dimensional material during the transfer process and during the process of dissolving the metal substrate. The problem of causing defects in two-dimensional materials improves the performance of field effect transistors using two-dimensional materials as channels.

In conjunction with the first aspect, in a first possible implementation manner of the first aspect, the manufacturing method further includes:

Forming a first transition layer on the source surface and a second transition layer on the drain surface using the gas while growing the two-dimensional material, the first transition layer being respectively separated from the source by a chemical bond The pole is electrically connected to the channel, and the second transition layer is electrically connected to the drain and the channel by a chemical bond, respectively.

In a first possible implementation of the first aspect, the source is electrically connected to the two-dimensional material as the channel through the first transition layer, and the first transition layer passes between the source and the two-dimensional material. The chemical bonds are connected together such that the contact resistance between the source and the channel becomes small; since the drain is electrically connected to the two-dimensional material as a channel through the second transition layer, and the second transition layer and the drain and the two-dimensional The materials are connected together by chemical bonds, so that the contact resistance between the drain and the channel becomes small, and the performance of the field effect transistor is further improved.

In combination with the first aspect or the first possible implementation of the first aspect, the second aspect of the first aspect In a possible implementation manner, the forming a source, a drain, and a two-dimensional material growth template on a non-metal substrate, including:

Forming the two-dimensional material growth template, the first recessed region and the second recessed region on the non-metal substrate, the two-dimensional material growth template being located between the first recessed region and the second recessed region ;

The source is formed in the first recess region, and the drain is formed in the second recess region.

In a second possible implementation manner of the first aspect, the two-dimensional material growth template is disposed in the first recessed region and the second recessed region by forming the first recessed region and the second recessed region on the non-metal substrate And a source is disposed in the first recessed region, and a drain is disposed in the second recessed region to expose the upper surface of the source and the upper surface of the drain. Thus, when a gas is used to form a two-dimensional material, the source The upper surface and the metal on the upper surface of the drain catalyze the growth of the two-dimensional material, which facilitates the growth of the two-dimensional material on the two-dimensional material growth template to form a channel; meanwhile, the metal on the upper surface of the source Reacting with the gas to form a first transition layer, and the first transition layer is connected to the source and the channel by a chemical bond, the metal on the upper surface of the drain reacts with the gas to form a second transition layer, and the second transition layer and the drain and the trench The channels are connected by chemical bonds.

In combination with the first aspect or the first possible implementation of the first aspect, in a third possible implementation manner of the first aspect, the forming a source, a drain, and a two-dimensional material on a non-metal substrate Templates, including:

Forming a first substrate on the non-metal substrate;

The source and the drain are formed on the first substrate, and a portion of the first substrate between the source and the drain is used as the two-dimensional material growth template.

In combination with the first aspect or the first to third possible implementation manners of the first aspect, in the fourth possible implementation manner of the first aspect, the two-dimensional material is graphene, transition metal Sulfide or black phosphorus.

In conjunction with the fourth possible implementation of the first aspect, in a fifth possible implementation of the first aspect, the transition metal disulfide comprises molybdenum disulfide or tungsten disulfide.

In conjunction with the first aspect, or any one of the first to fifth possible implementations of the first aspect, in a sixth possible implementation of the first aspect, the two-dimensional material growth template is nitrided boron.

In conjunction with the first aspect, or any one of the first to sixth possible implementations of the first aspect, in a seventh possible implementation of the first aspect, the atomic arrangement of the two-dimensional material The atomic arrangement of the two-dimensional material growth template is the same or similar.

In a seventh possible implementation, due to the atomic arrangement of the two-dimensional material growth template The atomic arrangement of the dimensional material is the same or similar, so that the elements of the two-dimensional material in the gas are grown by using a two-dimensional material growth template as a substrate, and finally a two-dimensional material is formed as a channel. The defects of the material are greatly reduced, so the conductivity of the two-dimensional material is better, and the performance of the field effect transistor using the two-dimensional material as a channel is improved.

In conjunction with the seventh possible implementation of the first aspect, in an eighth possible implementation of the first aspect, the atomic arrangement of the two-dimensional material is a hexagonal structure or a hexagonal structure.

With reference to the first aspect or any one of the first to eighth possible implementations of the first aspect, in the ninth possible implementation of the first aspect, when the material of the channel is graphene The channel is a single layer of graphene or a multilayer of graphene.

In a ninth possible implementation manner of the first aspect, if the channel is a single-layer graphene, the carrier has a faster transmission speed in the single-layer graphene, and the mobility is larger, and the work of the field effect transistor The lower the power consumption; if the channel is a multilayer graphene, the number of carriers will be more and the conductivity will be better.

In a second aspect, a field effect transistor is provided, the field effect transistor comprising:

a non-metal substrate, a source, a drain, a two-dimensional material growth template, a channel, a gate insulating layer, and a gate;

The source, the drain, and the two-dimensional material growth template are located on the non-metal substrate, and the two-dimensional material growth template is located between the source and the drain;

The channel is located on the two-dimensional material growth template, the material of the channel is a two-dimensional material, and the channel is electrically connected to the source and the drain, respectively;

The gate insulating layer is over the channel, and the gate is over the gate insulating layer.

In the second aspect, since the source and the drain are first formed on the non-metal substrate, and the two-dimensional material growth template is disposed on the non-metal substrate, the atomic arrangement of the two-dimensional material growth template and the atom of the two-dimensional material The arrangement structure is the same or similar. When a gas is used to grow a two-dimensional material, the source and drain metals catalyze the gas to decompose the elements of the two-dimensional material, so that the elements of the two-dimensional material grow with the two-dimensional material growth template as a substrate. Finally, a two-dimensional material is formed as a channel. This method greatly reduces the defects of the grown two-dimensional material, so the conductivity of the two-dimensional material is better, so that it can be directly formed as a channel in the process of fabricating the field effect transistor. The two-dimensional material eliminates the need to first grow a two-dimensional material on a metal substrate and then transfer the two-dimensional material to a non-metallic substrate, thereby avoiding the two-dimensional material during the transfer process and during the process of dissolving the metal. The problem of defects in the dimensional material improves the performance of field effect transistors using two-dimensional materials as the channel.

In conjunction with the second aspect, in a first possible implementation of the second aspect, the field effect crystal The tube further includes a first transition layer and a second transition layer;

The first transition layer is located on a surface of the source and is electrically connected to the source and the channel by a chemical bond, respectively;

The second transition layer is located on a surface of the drain and is electrically connected to the drain and the channel by a chemical bond, respectively.

In a first possible implementation of the second aspect, the source is electrically connected to the two-dimensional material as the channel through the first transition layer, and the first transition layer is passed between the source and the two-dimensional material. The chemical bonds are connected together such that the contact resistance between the source and the channel becomes small; since the drain is electrically connected to the two-dimensional material as a channel through the second transition layer, and the second transition layer and the drain and the two-dimensional The materials are connected together by chemical bonds, so that the contact resistance between the drain and the channel becomes small, and the performance of the field effect transistor is further improved.

In conjunction with the second aspect or the first possible implementation of the second aspect, in a second possible implementation manner of the second aspect, the field effect transistor further includes a channel protection layer, where the channel protection layer is located The channel is between the gate insulating layer.

In a second possible implementation of the second aspect, since a channel protective layer is provided between the two-dimensional material as the channel and the gate insulating layer, the gate insulating layer can be prevented from damaging the channel.

In conjunction with the second aspect, the first possible implementation of the second aspect, or the second possible implementation of the second aspect, in a third possible implementation of the second aspect, the non-metallic substrate Providing a first recessed area and a second recessed area;

The two-dimensional material growth template is located between the first recessed region and the second recessed region, the source is located in the first recessed region, and the drain is located in the second recessed region.

In a third possible implementation manner of the second aspect, the two-dimensional material growth template is disposed in the first recess region and the second recess region by forming the first recess region and the second recess region on the non-metal substrate And a source is disposed in the first recessed region, and a drain is disposed in the second recessed region to expose the upper surface of the source and the upper surface of the drain. Thus, when a gas is used to form a two-dimensional material, the source The upper surface and the metal on the upper surface of the drain catalyze the growth of the two-dimensional material, which facilitates the growth of the two-dimensional material on the two-dimensional material growth template to form a channel; meanwhile, the metal on the upper surface of the source Reacting with the gas to form a first transition layer, and the first transition layer is connected to the source and the channel by a chemical bond, the metal on the upper surface of the drain reacts with the gas to form a second transition layer, and the second transition layer and the drain and the trench The channels are connected by chemical bonds.

In combination with the second aspect or any of the possible implementations of any one of the first to third aspects of the second aspect, In a fourth possible implementation of the second aspect, the atomic arrangement of the two-dimensional material is a hexagonal structure.

In combination with the second aspect or the possible implementation of any one of the first to fourth aspects of the second aspect, in the fifth possible implementation of the second aspect, the two-dimensional material is graphene, transition Metal disulfide or black phosphorus.

In conjunction with the second aspect or the possible implementation of any one of the first to fifth aspects of the second aspect, in the sixth possible implementation of the second aspect, the two-dimensional material growth template is nitrided boron.

DRAWINGS

1 to 3 are schematic structural views of a fabrication process of a field effect transistor of the prior art;

4 is a schematic structural diagram of a field effect transistor according to Embodiment 1 of the present invention;

5 is a schematic structural view of a non-metal substrate and a two-dimensional material growth template according to Embodiment 1 of the present invention;

6 is a schematic structural diagram of another field effect transistor according to Embodiment 1 of the present invention;

FIG. 7 is a schematic structural diagram of still another field effect transistor according to Embodiment 1 of the present invention; FIG.

FIG. 8 is a schematic structural diagram of still another field effect transistor according to Embodiment 1 of the present invention; FIG.

9 is a flow chart showing a method of fabricating a field effect transistor according to Embodiment 2 of the present invention;

10 to FIG. 15 are schematic structural diagrams showing a manufacturing process of a method for fabricating a field effect transistor according to Embodiment 2 of the present invention;

16 is a flowchart of a method for fabricating another field effect transistor according to Embodiment 3 of the present invention;

17 to FIG. 20 are structural diagrams showing a manufacturing process of a method of fabricating a field effect transistor according to Embodiment 3 of the present invention.

among them,

A graphene;

B first substrate;

1 non-metal substrate; 2 source; 3 drain; 4 channel; 5 gate insulating layer;

7 two-dimensional material growth template; 8 first transition layer; 9 second transition layer;

10 first recessed area, 11 second recessed area; 12 channel protective layer.

detailed description

In order to make the objects, technical solutions and advantages of the present invention more clear, the present invention will be described below with reference to the accompanying drawings. The embodiments are described in further detail.

Example 1

At present, the two-dimensional material used as the channel of the field effect transistor is graphene, and the substrate of the field effect transistor is mostly a non-metal substrate, such as a silicon dioxide substrate, and graphite formed directly on the silicon dioxide substrate. There are many defects in the olefin, which makes the graphene as a channel less conductive, which affects the performance of the field effect transistor. The metal substrate can catalyze the growth of graphene, for example, if methane gas is used as growth. The carbon source of graphene, which catalyzes the decomposition of methane gas into active carbon atoms, and the active carbon atoms are more likely to grow into graphene on the surface of the metal substrate. Therefore, when graphene is used as a channel, Graphene is first grown on a metal substrate, and then the metal substrate is etched away in a solvent. Finally, the non-metal substrate is placed in a solvent to remove the graphene and dry it. In the process of etching the metal substrate, the solvent or the metal which is not completely corroded may remain on the graphene, and during the transfer of the graphene, the graphene may be wrinkled or even damaged, so that the conductivity of the graphene is deteriorated. , which in turn affects the performance of the field effect transistor.

In order to solve the problem that the conductivity of the graphene is deteriorated due to the transfer of the graphene and the residual contaminants on the graphene, thereby affecting the performance of the field effect transistor, as shown in FIG. 4, an embodiment of the present invention provides a Field effect transistor, the field effect transistor includes:

Non-metal substrate 1, source 2, drain 3, two-dimensional material growth template 7, channel 4, gate insulating layer 5 and gate 6;

The source 2, the drain 3 and the two-dimensional material growth template 7 are located on the non-metal substrate 1, and the two-dimensional material growth template 7 is located between the source 2 and the drain 3, and the atomic arrangement of the two-dimensional material growth template 7 is The atomic arrangement of the two-dimensional material is the same or similar;

The channel 4 is located on the two-dimensional material growth template 7, the material of the channel 4 is a two-dimensional material, and the channel 4 is electrically connected to the source 2 and the drain 3, respectively;

The gate insulating layer 5 is located above the trench 4, and the gate electrode 6 is located above the gate insulating layer 5.

The field effect transistor in the embodiment of the present invention first forms the source 2 and the drain 3 on the non-metal substrate 1, and the two-dimensional material growth template 7 is disposed on the non-metal substrate 1, and the template 7 is grown due to the two-dimensional material. The atomic arrangement structure is the same as or similar to the atomic arrangement structure of the two-dimensional material. When a two-dimensional material is grown using a gas, the metal of the source 2 and the drain 3 catalyze the decomposition of the gas into the element of the two-dimensional material, so that the two-dimensional material The element is grown by using a two-dimensional material growth template 7 as a substrate, and finally formed as a channel 4 The two-dimensional material, the method makes the defects of the grown two-dimensional material greatly reduced, so the conductivity of the two-dimensional material is better, so that the two-dimensional material as the channel 4 can be directly formed in the process of fabricating the field effect transistor. There is no need to first grow a two-dimensional material on a metal substrate and then transfer the two-dimensional material to the non-metal substrate 1, thereby avoiding the two-dimensional material being produced during the transfer process and in the process of dissolving the metal. The problem of defects improves the performance of field effect transistors using two-dimensional materials as the channel 4.

In the embodiment of the present invention, the two-dimensional material as the channel 4 may be graphene, or may be transition metal disulfide or black phosphorus, and the transition metal disulfide may include molybdenum disulfide or tungsten disulfide.

In the embodiment of the present invention, when a two-dimensional material is grown using a gas, the metals of the source 2 and the drain 3 catalyze the gas to decompose the elements of the two-dimensional material, so that the elements of the two-dimensional material are grown on the two-dimensional material growth template 7. Growth, forming the channel 4, for example, if graphene is selected as the channel 4, methane gas can be selected as the carbon source, and in the process of growing graphene, the source 2 and the drain are formed on the non-metal substrate 1 first. a pole 3, and a two-dimensional material growth template 7 is also disposed between the source 2 and the drain 3. The source 2 and the drain 3 catalyze the decomposition of methane gas into active carbon atoms and hydrogen atoms, so that the active carbon atoms are The two-dimensional material grows on the template 7 to form graphene.

In the embodiment of the present invention, since the atomic arrangement structure of the two-dimensional material growth template 7 is the same as or similar to the atomic arrangement structure of the two-dimensional material, the two-dimensional material is grown by the two-dimensional material growth template 7 There are few defects. For example, when the material of the channel 4 is graphene, since the atomic arrangement of the graphene is a hexagonal structure, the two-dimensional material growth template 7 may be a boron nitride having an atomic arrangement and a hexagonal structure. According to the actual situation, other materials having the same atomic arrangement structure as the hexagonal structure or materials similar to the hexagonal structure may be selected as the two-dimensional material growth template 7.

In the embodiment of the present invention, when the material of the channel 4 is graphene, it may be a single layer of graphene, a double layer of graphene or a multilayer of graphene. In the case of single-layer graphene, the carrier transport speed in the single-layer graphene is faster, the mobility is higher, and the power consumption of the field effect transistor is lower; if it is double-layer or multi-layer graphene, the carrier is The number will be more and the conductivity will be better.

As shown in FIG. 4, in the embodiment of the present invention, the field effect transistor further includes a first transition layer 8 and a second transition layer 9;

The first transition layer 8 is located on the surface of the source 2 and is electrically connected to the source 2 and the channel 4 by chemical bonds, respectively;

The second transition layer 9 is located on the surface of the drain 3 and is electrically connected to the drain 3 and the channel 4 by chemical bonds, respectively. Pick up.

In the embodiment of the present invention, since the source 2 is electrically connected to the two-dimensional material as the channel 4 through the first transition layer 8, and the first transition layer 8 and the source 2 and the two-dimensional material are connected by chemical bonds. Together, the contact resistance between the source 2 and the channel 4 becomes small; since the drain 3 is electrically connected to the two-dimensional material as the channel 4 through the second transition layer 9, and the second transition layer 9 and the drain The pole 3 and the two-dimensional material are connected together by chemical bonds, so that the contact resistance between the drain 3 and the channel 4 becomes small; in the prior structure, the source 2 and the drain 3 are deposited on As a two-dimensional material of the channel 4, the source 2 and the channel 4 are only in simple contact, so the contact resistance between the source 2 and the channel 4 is large, and the drain 3 and the channel 4 are also It is only a simple contact, so the contact resistance of the drain 3 and the channel 4 is large; and the total resistance of the field effect transistor is the contact resistance between the source 2 and the channel 4, the resistance of the channel 4, and the drain 3 The sum of the contact resistances with the channel 4, if the contact resistance between the source 2 and the channel 4, the contact resistance between the drain 3 and the channel 4 is too large, the channel 4 The ratio of the resistance in the total resistance is very small, and the gate 6 of the field effect transistor has a very small regulation effect on the entire circuit current, which affects the performance of the field effect transistor; therefore, by setting the first transition layer 8 and the The second transition layer 9 can effectively reduce the contact resistance between the source 2 and the channel 4 and the contact resistance between the drain 3 and the channel 4, so that the performance of the field effect transistor is more excellent.

As shown in FIG. 5, and participating in FIG. 4, in the embodiment of the present invention, the non-metal substrate 1 is provided with a first recessed region 10 and a second recessed region 11;

The two-dimensional material growth template 7 is located between the first recessed region 10 and the second recessed region 11, the source 2 is located in the first recessed region 10, and the drain 3 is located in the second recessed region 11.

In the embodiment of the present invention, by forming the first recessed region 10 and the second recessed region 11 on the non-metal substrate 1, the two-dimensional material growth template 7 is disposed between the first recessed region 10 and the second recessed region 11, And the source 2 is disposed in the first recessed region 10 to expose the upper surface of the source 2, and the drain 3 is disposed in the second recessed region 11, so that the upper surface of the drain 3 is exposed. In the material, the upper surface of the source 2 and the metal of the upper surface of the drain 3 can catalyze the growth of the two-dimensional material, which facilitates the growth of the two-dimensional material on the two-dimensional material growth template 7 to form the channel 4. At the same time, the metal on the upper surface of the source 2 reacts with the gas to form the first transition layer 8 while catalyzing the growth of the two-dimensional material, and the first transition layer 8 is connected to the source 2 and the channel 4 by chemical bonds, and the drain 3 is The metal of the surface reacts with the gas to form the second transition layer 9 while catalyzing the growth of the two-dimensional material, and the second transition layer 9 is connected to the drain 3 and the channel 4 by chemical bonds.

The following is an example of a two-dimensional material: graphene:

When graphene is selected as the material of channel 4, it may be selected by chemical vapor deposition or plasma enhanced chemical vapor deposition to grow graphene by gas, gas may be selected from methane CH ₄ gas, or carbon-containing gas such as ethylene or acetylene may be selected. It is also possible to select a liquid containing carbon such as alcohol. In the process of chemical vapor deposition or plasma enhanced chemical vapor deposition, the alcohol can be first converted into a gas by adjusting the decomposition temperature, and graphene is grown by using an alcohol gas. If methane gas is selected as the carbon source, boron nitride is used as the two-dimensional material growth template, and when graphene is grown by methane, the upper surface of the source 2 located in the first recessed region 10 and the drain located in the second recessed region 11 The upper surface of the pole 3 is exposed, and the metal on the upper surface of the source 2 and the metal on the upper surface of the drain 3 catalyze the decomposition of methane gas into active carbon atoms, so that the upper surface of the source 2 and the upper surface of the source 2, the drain 3 The activity of the carbon atoms in the vicinity of the upper surface and the upper surface of the drain 3 is high, and thus it is advantageous for the carbon atoms to grow into graphene on the boron nitride to form the channel 4.

At the same time, the metal on the upper surface of the source 2 reacts with the carbon in the gas to form the first transition layer 8, and the metal on the upper surface of the drain 3 reacts with the carbon in the gas to form the second transition layer 9, wherein when the source 2 When the metal materials of the drain 3 are different, the materials of the first transition layer 8 and the second transition layer 9 are different, for example:

When the source 2 and the drain 3 are layer-stacked metal copper and metal molybdenum, and the upper surface of the source 2 and the upper surface of the drain 3 are exposed of metal molybdenum, the first transition of the upper surface of the source 2 The second transition layer 9 on the upper surface of the layer 8 and the drain 3 is Mo _x C formed by the reaction of metal molybdenum and carbon, and the passage between Mo _x C and the source 2, the drain 3 and the graphene as the channel 4 are passed. Chemically bonded so that the contact resistance between the source 2 and the graphene as the channel 4, and the contact resistance between the drain 3 and the graphene as the channel 4 are small;

When the source 2 and the drain 3 are layer-stacked metal copper and metallic nickel, and the upper surface of the source 2 and the upper surface of the drain 3 are exposed as metallic nickel, the graphene is grown on the boron nitride. During the process, the temperature is high, and the metal nickel is mixed into the source 2 and the drain 3 by the high temperature, and is integrated into the source after the growth of the graphene as the channel 4 is cooled. The carbon in the pole 2 and the drain 3 is precipitated from the surfaces of the source 2 and the drain 3 to form graphene, that is, the material of the first transition layer 8 and the second transition layer 9 is graphene, but relative to the channel 4 For the graphene, the thickness of the graphene of the first transition layer 8 and the second transition layer 9 is thicker, so the number of carriers in the first transition layer 8 and the second transition layer 9 is larger, and the conductivity is more. Preferably, the connection of the source 2 and the graphene as the channel 4 through the first transition layer 8 can effectively reduce the contact resistance, and the connection of the drain 3 and the graphene as the channel 4 through the second transition layer 9 can effectively reduce the contact resistance. At the same time, the thicker graphene and the source 2, the drain 3 and the graphene as the channel 4 are also connected by chemical bonds. Possible to reduce the channel between the source electrode 2 and 4 as graphene, The contact resistance between the drain 3 and the graphene as the channel 4.

In the embodiment of the present invention, in the process of growing graphene by chemical vapor deposition or plasma enhanced chemical vapor deposition, the required temperatures are high, and the defects of the upper surfaces of the source 2 and the drain 3 are high at high temperatures. The impurities and impurities are also reduced, and the contact resistance between the source 2 and the channel 4 and between the drain 3 and the channel 4 can be further reduced.

The metal of the source 2 and the drain 3 may also be a simple metal such as platinum, copper or nickel; or an alloy of different metals, such as an alloy of copper and tungsten, an alloy of copper and nickel, or different A layered stack of metals.

As shown in FIG. 6 , in the embodiment of the present invention, the field effect transistor may further include a channel protection layer 12 , and the channel protection layer 12 is located between the channel 4 and the gate insulating layer 5 .

Since the gate insulating layer 5 is a high dielectric material, the high dielectric material may include aluminum oxide Al ₂ O ₃ , hafnium hydroxide HfO ₂ or antimony trioxide Y ₂ O _{3 ,} etc., in order to prevent the gate insulating layer 5 from being broken as a trench. A two-dimensional material of the track 4 may be provided with a channel protective layer 12 between the two-dimensional material and the gate insulating layer 5, and the channel protective layer 12 may also cover the first transition layer 8 and the second transition layer 9 at the same time. The first transition layer 8 and the second transition layer 9 also have a protective effect. In the embodiment of the present invention, if the two-dimensional material as the channel 4 is graphene, the material of the channel protective layer 12 may be selected from nitrogen. Boron, since the atomic arrangement structure of boron nitride is the same as that of graphene, that is, it is a hexagonal arrangement structure, boron nitride as the channel protective layer 12 can be grown using graphene as a growth template, and can also be utilized. The prior art transfers boron nitride to graphene after growing boron nitride on other substrates.

In the embodiment of the present invention, the field effect transistor can also be designed as the structure shown in FIG. 7, that is:

A first substrate B is formed on the non-metal substrate 1, and the atomic arrangement structure of the first substrate B is the same as or similar to the atomic arrangement structure of the two-dimensional material;

The source 2 and the drain 3 are located on the first substrate B, and the first substrate B between the source 2 and the drain 3 is used as a two-dimensional material growth template 7;

The channel 4 is located on the two-dimensional material growth template 7, and the material of the channel 4 is a two-dimensional material;

The first transition layer 8 is located on the surface of the source 2, and is electrically connected to the source 2 and the channel 4 by a chemical bond, the second transition layer 9 is located on the surface of the drain 3, and is electrically connected to the drain 3 and the channel 4 by chemical bonds. connection;

The channel protection layer 12 is located above the channel 4, and the first transition layer 8 and the second transition layer 9 may also be covered;

The gate insulating layer 5 is located above the channel protective layer 12, and the gate electrode 6 is located above the gate insulating layer 5.

In the embodiment of the present invention, the field effect transistor can also be designed as shown in FIG. 8: namely:

Forming a source 2 and a drain 3 on the non-metal substrate 1, and forming a two-dimensional material growth template 7 between the source 2 and the drain 3;

The channel 4 is located on the two-dimensional material growth template 7, and the material of the channel 4 is a two-dimensional material;

The first transition layer 8 is located on the surface of the source 2, and is electrically connected to the source 2 and the channel 4 by a chemical bond, the second transition layer 9 is located on the surface of the drain 3, and is electrically connected to the drain 3 and the channel 4 by chemical bonds. connection;

The channel protection layer 12 is located above the channel 4, and the first transition layer 8 and the second transition layer 9 may also be covered;

The gate insulating layer 5 is located above the channel protective layer 12, and the gate electrode 6 is located above the gate insulating layer 5.

The field effect transistor in the embodiment of the present invention first forms the source 2 and the drain 3 on the non-metal substrate 1, and the two-dimensional material growth template 7 is disposed on the non-metal substrate 1, and the template 7 is grown due to the two-dimensional material. The atomic arrangement structure is the same as or similar to the atomic arrangement structure of the two-dimensional material. When a two-dimensional material is grown using a gas, the metal of the source 2 and the drain 3 catalyze the decomposition of the gas into the element of the two-dimensional material, so that the two-dimensional material The element is grown by using the two-dimensional material growth template 7 as a substrate, and finally forms a two-dimensional material as the channel 4. This method greatly reduces the defects of the grown two-dimensional material, so the conductivity of the two-dimensional material is better. The two-dimensional material as the channel 4 can be formed directly in the process of fabricating the field effect transistor, without first growing the two-dimensional material on the metal substrate and transferring the two-dimensional material onto the non-metal substrate 1, avoiding the two-dimensional The problem that the material causes defects in the two-dimensional material during the transfer process and in the process of dissolving the metal improves the performance of the field effect transistor using the two-dimensional material as the channel 4. Meanwhile, when a two-dimensional material as a channel is formed, a first transition layer 8 is formed over the source 2, and a pass between the first transition layer 8 and the source 2 and the two-dimensional material as the channel 4 is passed. Chemically bonded, a second transition layer 9 is formed over the drain 3, and the second transition layer 9 and the drain 3 and the two-dimensional material as the channel 4 are connected by a chemical bond, the first transition layer 8 The contact resistance between the source 2 and the channel 4 can be effectively reduced, and the second transition layer 9 can effectively reduce the contact resistance between the drain 3 and the channel 4, thereby improving the field effect of using the two-dimensional material as the channel 4. The performance of the transistor.

Example 2

As shown in FIG. 9, an embodiment of the present invention provides a method for fabricating a field effect transistor, the method comprising:

Step 101: A two-dimensional material growth template 7, a first recessed region 10 and a second recessed region 11 are disposed on the non-metal substrate 1, and the two-dimensional material growth template 7 is located between the first recessed region 10 and the second recessed region 11. , The atomic arrangement structure of the two-dimensional material growth template 7 is the same as or similar to the atomic arrangement structure of the two-dimensional material;

As shown in FIG. 10, a two-dimensional material growth template 7 may be formed on the non-metal substrate 1, wherein the two-dimensional material growth template 7 may be formed on the metal substrate before being transferred to the non-metal liner. On the bottom 1, for example, the thickness may be between 10 nm and 11 nm, and it may be appropriately set according to actual conditions.

As shown in FIG. 11, the first recessed region 10 and the second recessed region 11 are etched on the non-metal substrate 1 by electron beam exposure or ultraviolet exposure.

In the embodiment of the present invention, the material of the non-metal substrate 1 may be silicon, quartz, SOI (Silicon-On-Insulator, silicon on an insulating substrate) or silicon carbide.

In the embodiment of the present invention, the method of etching the first recessed region 10 and the second recessed region 11 may be selected according to actual conditions. For example, if the material of the non-metal substrate 1 is silicon, the etching method may select reactive ion etching. In order to prevent the two-dimensional material growth template 7 from being damaged during the etching process, an anti-etching protective glue may be applied on the two-dimensional material growth template 7 before the etching, for example, may be a photoresist.

In the embodiment of the present invention, the order of forming the first recessed region 10, the second recessed region 11, and the two-dimensional material growth template 7 is not limited, and the first recessed region 10 and the first may be formed on the non-metal substrate 1 first. The second recessed region 11 further forms a two-dimensional material growth template 7 between the first recessed region 10 and the second recessed region 11.

Step 102: as shown in FIG. 12, forming a source 2 in the first recessed region 10, forming a drain 3 in the second recessed region 11;

In the embodiment of the present invention, the material of the source 2 and the drain 3 may be a simple metal, such as copper, nickel or platinum; or an alloy of copper and molybdenum, or an alloy of copper and nickel; or copper and molybdenum. Layered stack, in which copper is in the lower layer, molybdenum is in the upper layer, copper has a thickness of 10 nm, and molybdenum has a thickness of 90 nm. It can also be a layered stack of copper and tungsten. The thickness of each layer of metal can also be designed according to actual conditions. It is not limited to this embodiment.

In the embodiment of the present invention, the method for fabricating the field effect transistor in which the material of the channel 4 is a two-dimensional material is to form the source 2 and the drain 3 on the non-metal substrate 1 first. Some first transfer the two-dimensional material to the non-metal substrate 1, and then form the source 2 and the drain 3 on the two-dimensional material. For example, transfer the fabricated graphene to the non-metal substrate 1, and then The source 2 and the drain 3 are formed on the metal substrate 1, and therefore, when forming the source 2 and the drain 3, it is necessary to consider whether the method used when forming the source 2 and the drain 3 may cause damage to the graphene. For example, the method of magnetron sputtering cannot be used at this time. Forming source 2 and drain 3, because the energy of metal atoms forming source 2 and drain 3 during magnetron sputtering is higher, causing damage to graphene, causing source 2, drain 3 and graphene The quality of the contact position deteriorates, resulting in an increase in contact resistance; at the same time, the source 2 and the drain 3 cannot be formed by electroplating because the non-metal substrate 1 and graphene are also bubbled in the chemical solution during electroplating. , causing damage to graphene. In the embodiment of the present invention, the source 2 and the drain 3 are formed first, and thus the method of forming the source 2 and the drain 3 is not limited, for example, a method of electron beam evaporation, a method of thermal evaporation, and magnetron sputtering. Method or method of plating.

Step 103: As shown in FIG. 13, a two-dimensional material is grown on the two-dimensional material growth template 7 using a gas, and a two-dimensional material is used as the channel 4, while the first transition layer 8 and the drain are grown on the surface of the source 2. 3 surface growth of the second transition layer 9, the first transition layer 8 is electrically connected to the source 2 and the channel 4 respectively by chemical bonds, and the second transition layer 9 is electrically connected to the drain 3 and the channel 4 by chemical bonds, respectively;

In an embodiment of the invention, the gas comprises an element constituting a two-dimensional material, and the source 2 and the drain 3 are used for catalyzing the decomposition of the element of the two-dimensional material in the process of growing the two-dimensional material, so that the element of the two-dimensional material is A two-dimensional material is grown on the two-dimensional material growth template 7.

In the embodiment of the present invention, the two-dimensional material may be grown on the two-dimensional material growth template 7 by a chemical vapor deposition method or a plasma enhanced chemical vapor deposition method.

In the embodiment of the present invention, the two-dimensional material may be graphene, or may be transition metal disulfide or black phosphorus, wherein the transition metal disulfide may include molybdenum disulfide or tungsten disulfide. When the two-dimensional material is graphene, the gas may be selected from methane CH ₄ gas, or a gas containing carbon such as ethylene or acetylene, or a liquid containing carbon such as alcohol, in chemical vapor deposition or plasma enhanced chemical vapor phase. During the deposition process, the alcohol can be first converted into a gas, and then the gas is used to grow graphene. When the two-dimensional material is molybdenum disulfide, the powder of molybdenum and the gas containing sulfur may be selected. In the process of chemical vapor deposition or plasma enhanced chemical vapor deposition, the powder of molybdenum becomes gas and decomposes into molybdenum atoms, including The sulfur gas decomposes out the sulfur atom, and the sulfur atom reacts with the molybdenum atom to form molybdenum disulfide.

In the embodiment of the present invention, since the upper surfaces of the source 2 and the drain 3 are exposed, the upper surface of the source 2 and the metal of the upper surface of the drain 3 catalyze the growth of the two-dimensional material as the channel 4. The effect is beneficial to the growth of the two-dimensional material on the two-dimensional material growth template 7. For example, when the two-dimensional material is graphene, the methane CH ₄ gas is selected as the carbon source to grow graphene, and the metal on the upper surface of the source 2 and the drain 3 catalyzes the decomposition of the methane gas into active carbon atoms, so the source 2 is The carbon atoms in the vicinity of the surface and the upper surface of the source 2, the upper surface of the drain 3, and the upper surface of the drain 3 are highly active, which facilitates the growth of graphene on the two-dimensional material growth template 7 to form the channel 4.

In the embodiment of the present invention, the material of the two-dimensional material growth template 7 can be selected according to the material of the two-dimensional material. For example, when the two-dimensional material is graphene, since the atomic arrangement structure of the graphene is a hexagonal structure, the atom can be selected. The arrangement structure is also a hexagonal structure of boron nitride as a two-dimensional material growth template 7.

In the embodiment of the present invention, since the atomic arrangement structure of the two-dimensional material growth template 7 is the same as or similar to the atomic arrangement structure of the two-dimensional material, when the gas is used to grow the two-dimensional material, the two-dimensional material grows the template by using the two-dimensional material. As a substrate to grow, the defects of the grown two-dimensional material are greatly reduced, so that the conductivity of the two-dimensional material is better, so that the two-dimensional material as the channel 4 can be formed directly in the process of fabricating the field effect transistor without first The growth of the two-dimensional material on the metal substrate and the transfer of the two-dimensional material to the non-metal substrate 1 avoids the problem that the two-dimensional material causes defects in the two-dimensional material during the transfer process and in the process of dissolving the metal. The performance of a field effect transistor using a two-dimensional material as the channel 4 is improved.

In the embodiment of the present invention, as shown in FIG. 13, a two-dimensional material as the channel 4 is grown on the two-dimensional material growth template 7, while a first transition layer 8 is grown on the surface of the source 2 using a gas, and at the drain 3 A second transition layer 9 is grown on the surface. The first transition layer 8 is electrically connected to the source 2 and the channel 4 by chemical bonds, respectively, and the second transition layer 9 is electrically connected to the drain 3 and the channel 4 by chemical bonds, respectively.

For example, when the two-dimensional material is graphene, the source 2 and the drain 3 are layered stacked metal copper and metal molybdenum, the metal molybdenum reacts with carbon to form Mo _x C, at this time the first transition layer 8 and the second The material of the transition layer 9 is Mo _x C, and the Mo _x C is connected to the source 2, the drain 3, and the graphene as the channel 4 by chemical bonds; when the two-dimensional material is graphene, the source 2 and When the drain 3 is a layered metal copper and a metal nickel, the metal nickel is mixed with the carbon in the gas into the source 2 and the drain 3 under the action of high temperature, and is cooled during the growth of the graphene. The carbon incorporated into the source 2 and the drain 3 is precipitated from the surfaces of the source 2 and the drain 3 to form graphene, that is, the material of the first transition layer 8 and the second transition layer 9 is graphene, but relative to As the graphene of the channel 4, the thickness of the graphene of the first transition layer 8 and the second transition layer 9 is thicker, and thus the number of carriers in the first transition layer 8 and the second transition layer 9 is more The conductivity is better, and at the same time, the thicker graphene and the source 2, the drain 3 and the graphene as the channel 4 are also connected by chemical bonds.

In the embodiment of the present invention, since the source 2 is electrically connected to the two-dimensional material as the channel 4 through the first transition layer 8, and the first transition layer 8 and the source 2 and the two-dimensional material are connected by chemical bonds. Together, the drain 3 is electrically connected to the two-dimensional material as the channel 4 through the second transition layer 9, and the second transition layer 9 and the drain 3 and the two-dimensional material are connected by chemical bonds. So the first transition layer 8 and the second transition layer 9 can effectively reduce the contact resistance between the source 2 and the channel 4 and the contact resistance between the drain 3 and the channel 4, making the field effect transistor more excellent in use performance.

Step 104: As shown in FIG. 14, a channel protective layer 12 is formed on the trench 4.

In the embodiment of the present invention, the material of the channel protection layer 12 may be selected from boron nitride. If the two-dimensional material of the channel 4 is graphene, the atomic arrangement structure of the boron nitride is the same as that of the graphene. That is, all of them are hexagonal structures, so boron nitride as the channel protective layer 12 can be grown using graphene as a growth template, can be formed by chemical vapor deposition or plasma enhanced chemical vapor deposition, and can also utilize prior art. The boron nitride is transferred to the graphene after the boron nitride is grown on the other substrate.

In the embodiment of the present invention, as shown in FIG. 14, the channel protective layer 12 can also cover the first transition layer 8 and the second transition layer 9 at the same time, while protecting the first transition layer 8 and the second transition layer 9 The role.

Step 105: As shown in FIG. 15, a gate insulating layer 5 is formed on the channel protective layer 12.

In the embodiment of the present invention, the gate insulating layer 5 may be formed by a method of atomic layer deposition, and the material of the gate insulating layer 5 may include aluminum oxide Al ₂ O ₃ , barium hydroxide HfO ₂ or antimony trioxide Y ₂ O ₃ .

Step 106: As shown in FIG. 6, a gate electrode 6 is formed on the gate insulating layer 5.

In the embodiment of the present invention, the material of the gate electrode 6 may be gold, palladium or tungsten, or may be other metal materials, and may be selected according to actual conditions.

The field effect transistor in the embodiment of the present invention first forms the source 2 and the drain 3 on the non-metal substrate 1, and the two-dimensional material growth template 7 is disposed on the non-metal substrate 1, and the template 7 is grown due to the two-dimensional material. The atomic arrangement structure is the same as or similar to the atomic arrangement structure of the two-dimensional material. When a two-dimensional material is grown using a gas, the metal of the source 2 and the drain 3 catalyze the decomposition of the gas into the element of the two-dimensional material, so that the two-dimensional material The element is grown by using the two-dimensional material growth template 7 as a substrate, and finally forms a two-dimensional material as the channel 4. This method greatly reduces the defects of the grown two-dimensional material, so the conductivity of the two-dimensional material is better. The two-dimensional material as the channel 4 can be formed directly in the process of fabricating the field effect transistor, without first growing the two-dimensional material on the metal substrate and transferring the two-dimensional material onto the non-metal substrate 1, avoiding the two-dimensional The problem that the material causes defects in the two-dimensional material during the transfer process and in the process of dissolving the metal improves the performance of the field effect transistor using the two-dimensional material as the channel 4. Meanwhile, when a two-dimensional material is formed, a first transition layer 8 is further formed on the source electrode 2, and the first transition layer 8 and the source electrode 2 and the two-dimensional material as the channel 4 are connected by a chemical bond. A second transition layer 9 is also formed over the drain 3, and the second transition layer 9 and the drain 3 and the two-dimensional material as the channel 4 are connected by chemical bonds, and the first transition layer 8 can effectively reduce the source. Pole 2 and channel 4 The contact resistance between the second transition layer 9 can effectively reduce the contact resistance between the drain 3 and the channel 4, improving the performance of the field effect transistor using the two-dimensional material as the channel 4.

Example 3

As shown in FIG. 16, an embodiment of the present invention provides a method for fabricating a field effect transistor, the method comprising:

Step 201: As shown in FIG. 17, a first substrate B is formed on the non-metal substrate, and the atomic arrangement structure of the first substrate B is the same as or similar to the atomic arrangement structure of the two-dimensional material, on the first substrate B. a source 2 and a drain 3 are formed thereon, and a portion of the first substrate B between the source 2 and the drain 3 is grown as a two-dimensional material growth template 7;

In the embodiment of the present invention, the order of forming the source 2, the drain 3, and the first substrate B is not limited, and the source 2 and the drain 3 may be formed on the non-metal substrate 1 first, and then at the source. a first substrate B is formed on the non-metal substrate 1 between the source 2 and the drain 3, and the first substrate on the surfaces of the source 2 and the drain 3 is etched away. B. The first substrate B between the source 2 and the drain 3 is used as a two-dimensional material growth template 7.

Step 202: As shown in FIG. 18, a two-dimensional material is grown on the two-dimensional material growth template 7 using a gas, and the two-dimensional material is used as the channel 4, while the first transition layer 8 is grown on the surface of the source 2 using a gas and a second transition layer 9 is grown on the surface of the drain 3, and the first transition layer 8 is electrically connected to the source 2 and the two-dimensional material respectively by chemical bonds, and the second transition layer 9 is electrically connected to the drain 3 and the two-dimensional material through chemical bonds, respectively;

In the embodiment of the present invention, the gas includes an element constituting a two-dimensional material, and when a two-dimensional material is grown on the two-dimensional material growth template 7 using a gas, the metal of the source 2 and the drain 3 catalyze the decomposition of the gas into the two-dimensional material. The element causes the element of the two-dimensional material to grow on the two-dimensional material growth template 7 to form the channel 4, and at the same time, since the atomic arrangement of the two-dimensional material growth template 7 is the same as that of the two-dimensional material of the channel 4 Or similarly, the defects of the two-dimensional material obtained by using the two-dimensional material growth template 7 as a substrate are greatly reduced, so that the conductivity of the two-dimensional material is relatively good, so that the method can be used directly in the field effect. In the process of the transistor, a two-dimensional material is formed as the channel 4, and it is not necessary to first grow the two-dimensional material on the metal substrate and then transfer the two-dimensional material to the non-metal substrate 1, thereby avoiding the two-dimensional material during the transfer process. And the problem of causing defects in the two-dimensional material in the process of dissolving the metal, improving the performance of the field effect transistor using the two-dimensional material as the channel 4.

At the same time, while the two-dimensional material is grown on the two-dimensional material growth template 7, the first transition layer 8 is grown on the surface of the source 2 and the second transition layer 9 is grown on the surface of the drain 3, because the source 2 is The two-dimensional material of the channel 4 is electrically connected through the first transition layer 8, and the first transition layer 8 and the source 2 and the two-dimensional material are connected by chemical bonds, and the drain 3 and the channel 4 are used as the channel 4. The two-dimensional material is electrically connected through the second transition layer 9, and the second transition layer 9 and the drain 3 and the two-dimensional material are connected by chemical bonds, so the first transition layer 8 and the second transition layer 9 can The contact resistance between the source 2 and the channel 4 and the contact resistance between the drain 3 and the channel 4 are effectively reduced, so that the performance of the field effect transistor is further improved.

Step 203: As shown in FIG. 19, a channel protective layer 12 is formed on the trench 4.

In the embodiment of the present invention, the material of the channel protection layer 12 may be selected from boron nitride. If the two-dimensional material of the channel 4 is graphene, the atomic arrangement structure of the boron nitride is the same as that of the graphene. That is, all of them are hexagonal structures, so boron nitride as the channel protective layer 12 can be grown using graphene as a growth template, can be formed by chemical vapor deposition or plasma enhanced chemical vapor deposition, and can also utilize prior art. The boron nitride is transferred to the graphene after the boron nitride is grown on the other substrate.

In the embodiment of the present invention, as shown in FIG. 19, the channel protective layer 12 can also cover the first transition layer 8 and the second transition layer 9 at the same time, while protecting the first transition layer 8 and the second transition layer 9 The role.

Step 204: As shown in FIG. 20, a gate insulating layer 5 is formed on the channel protective layer 12.

In the embodiment of the present invention, the gate insulating layer 5 may be formed by a method of atomic layer deposition, and the material of the gate insulating layer 5 may include aluminum oxide Al ₂ O ₃ , barium hydroxide HfO ₂ or antimony trioxide Y ₂ O ₃ .

Step 205: As shown in FIG. 7, a gate electrode 6 is formed on the gate insulating layer 5.

In the embodiment of the present invention, the material of the gate electrode 6 may be gold, palladium or tungsten, or may be other metal materials, and may be selected according to actual conditions.

The field effect transistor in the embodiment of the present invention first forms the source 2 and the drain 3 on the non-metal substrate 1, and the two-dimensional material growth template 7 is disposed on the non-metal substrate 1, and the template 7 is grown due to the two-dimensional material. The atomic arrangement structure is the same as or similar to the atomic arrangement structure of the two-dimensional material. When a two-dimensional material is grown using a gas, the metal of the source 2 and the drain 3 catalyze the decomposition of the gas into the element of the two-dimensional material, so that the two-dimensional material The element is grown by using the two-dimensional material growth template 7 as a substrate, and finally forms a two-dimensional material as the channel 4. This method greatly reduces the defects of the grown two-dimensional material, so the conductivity of the two-dimensional material is better. The two-dimensional material as the channel 4 can be formed directly in the process of fabricating the field effect transistor, without first growing the two-dimensional material on the metal substrate and transferring the two-dimensional material onto the non-metal substrate 1, avoiding the two-dimensional The problem of the material causing defects in the two-dimensional material during the transfer process and in the process of dissolving the metal improves the field effect transistor using the two-dimensional material as the channel 4. At the same time, when forming a two-dimensional material, a first transition layer 8 is formed on the source 2, and a chemical bond is formed between the first transition layer 8 and the source 2 and the two-dimensional material as the channel 4. Connected, a second transition layer 9 is formed on the drain 3, and the second transition layer 9 and the drain 3 and the two-dimensional material as the channel 4 are connected by a chemical bond, and the first transition layer 8 can be Effectively reducing the contact resistance between the source 2 and the channel 4, the second transition layer 9 can effectively reduce the contact resistance between the drain 3 and the channel 4, and improve the field effect transistor using the two-dimensional material as the channel 4. Performance of use.

The above are only the preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalents, improvements, etc., which are within the spirit and scope of the present invention, should be included in the protection of the present invention. Within the scope.

Claims (15)

A method for fabricating a field effect transistor, characterized in that the manufacturing method comprises: Forming a source, a drain, and a two-dimensional material growth template on the non-metal substrate, the two-dimensional material growth template being located between the source and the drain; Forming a two-dimensional material on the two-dimensional material growth template using a gas, the two-dimensional material as a channel, the channel being electrically connected to the source and the drain, respectively, the gas including a composition An element of a two-dimensional material, the source and the drain for catalyzing the gas to decompose elements of the two-dimensional material during growth of the two-dimensional material, such that elements of the two-dimensional material Growing the two-dimensional material on the two-dimensional material growth template; A gate insulating layer and a gate are formed on the channel. The manufacturing method according to claim 1, wherein the manufacturing method further comprises: Forming a first transition layer on the source surface and a second transition layer on the drain surface using the gas while growing the two-dimensional material, the first transition layer being respectively separated from the source by a chemical bond The pole is electrically connected to the channel, and the second transition layer is electrically connected to the drain and the channel by a chemical bond, respectively. The method according to claim 1 or 2, wherein the forming a source, a drain, and a two-dimensional material growth template on the non-metal substrate comprises: Forming the two-dimensional material growth template, the first recessed region and the second recessed region on the non-metal substrate, the two-dimensional material growth template being located between the first recessed region and the second recessed region ; The source is formed in the first recess region, and the drain is formed in the second recess region. The method according to claim 1 or 2, wherein the forming a source, a drain, and a two-dimensional material growth template on the non-metal substrate comprises: Forming a first substrate on the non-metal substrate; The source and the drain are formed on the first substrate, and a portion of the first substrate between the source and the drain is used as the two-dimensional material growth template. The manufacturing method according to claim 1 or 2, wherein the two-dimensional material is stone Moenol, transition metal disulfide or black phosphorus. The method according to claim 5, wherein the transition metal disulfide comprises molybdenum disulfide or tungsten disulfide. The manufacturing method according to claim 1 or 2, wherein the two-dimensional material growth template is boron nitride. The manufacturing method according to claim 1 or 2, wherein the atomic arrangement structure of the two-dimensional material is the same as the atomic arrangement structure of the two-dimensional material growth template. The method according to claim 8, wherein the atomic arrangement of the two-dimensional material is a hexagonal structure. A field effect transistor, characterized in that the field effect transistor comprises: a non-metal substrate, a source, a drain, a two-dimensional material growth template, a channel, a gate insulating layer, and a gate; The source, the drain, and the two-dimensional material growth template are located on the non-metal substrate, and the two-dimensional material growth template is located between the source and the drain; The channel is located on the two-dimensional material growth template, the material of the channel is a two-dimensional material, and the channel is electrically connected to the source and the drain, respectively; The gate insulating layer is over the channel, and the gate is over the gate insulating layer. The field effect transistor according to claim 10, wherein the field effect transistor further comprises a first transition layer and a second transition layer; The first transition layer is located on a surface of the source and is electrically connected to the source and the channel by a chemical bond, respectively; The second transition layer is located on a surface of the drain and is electrically connected to the drain and the channel by a chemical bond, respectively. The field effect transistor according to claim 10, wherein said field effect crystal The tube further includes a channel protective layer between the channel and the gate insulating layer. The field effect transistor according to any one of claims 10 to 12, wherein the non-metal substrate is provided with a first recessed region and a second recessed region; The two-dimensional material growth template is located between the first recessed region and the second recessed region, the source is located in the first recessed region, and the drain is located in the second recessed region. The field effect transistor according to any one of claims 10-12, wherein the atomic arrangement of the two-dimensional material is a hexagonal structure. A field effect transistor according to any of claims 10-12, wherein the two-dimensional material is graphene, transition metal disulfide or black phosphorus.

Images