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WO2018004549A1 - Nanolaser pour conversion spin-optique et optique-spin - Google Patents

Nanolaser pour conversion spin-optique et optique-spin Download PDF

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Publication number
WO2018004549A1
WO2018004549A1 PCT/US2016/039899 US2016039899W WO2018004549A1 WO 2018004549 A1 WO2018004549 A1 WO 2018004549A1 US 2016039899 W US2016039899 W US 2016039899W WO 2018004549 A1 WO2018004549 A1 WO 2018004549A1
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WIPO (PCT)
Prior art keywords
waveguide
spin
layer
spin orbit
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2016/039899
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English (en)
Inventor
Sasikanth Manipatruni
Dmitri E. Nikonov
Ian A. Young
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Intel Corp
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Intel Corp
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Priority to PCT/US2016/039899 priority Critical patent/WO2018004549A1/fr
Publication of WO2018004549A1 publication Critical patent/WO2018004549A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

Definitions

  • Optical signals are routinely converted into electrical signals and vice versa.
  • spin or magnetization related to it is spin or magnetization related to it.
  • spin of an electron can be used to carry information in a ferromagnet.
  • Spin-transfer torque (STT) based logic devices that use spins and magnets for information processing have been proposed.
  • Fig. 1 illustrates conceptual block diagrams of spin-to-optical and optical-to- spin converters, according to some embodiments of the disclosure.
  • Fig. 2 illustrates spin orbit material integrated optical device with electric input, according to some embodiments of the disclosure.
  • Fig. 3 illustrates spin orbit material integrated optical device with cavity and with electric input, according to some embodiments of the disclosure.
  • Fig. 4 illustrates spin orbit material integrated optical device with cavity and with ferromagnet contacts, according to some embodiments of the disclosure.
  • Fig. 5 illustrates mode selected spin orbit material integrated optical device with cavity and with ferromagnet contacts, according to some embodiments of the disclosure.
  • Fig. 6 illustrates a top view of a one dimensional (ID) photonic crystal cavity spin orbit material spin laser, according to some embodiments of the disclosure.
  • Fig. 7 illustrates a plot showing optical transmittivity over wavelength for spin to optical conversion, according to some embodiments of the disclosure.
  • Fig. 8 illustrates a top view of an enhanced quality factor two-dimensional
  • (2D) photonic crystal cavity spin orbit material spin laser according to some embodiments of the disclosure.
  • Fig. 9 illustrates a method flowchart of converting spin electrical signal into an optical signal, according to some embodiments of the disclosure.
  • Fig. 10 illustrates a method flowchart of converting an optical signal to spin electrical signal, according to some embodiments of the disclosure.
  • Fig. 11 illustrates a smart device or a computer system or a SoC (System-on-
  • Some embodiments describe a spin to optical transducer. Some embodiments describe an optical to spin transducer. Some embodiments enable spintronic circuits to directly interface with intra-chip and chip-to-chip interconnect.
  • the transducer of some embodiments is comprised of waveguide or optical cavity formed by light confinement (e.g., by micro ring resonators, one dimensional (ID) photonic crystal cavity and/or two/three dimensional (2D/3D) photonic crystal cavities).
  • the spin to electrical or optical transduction is realized by spin dependent optical gain and spin dependent optical absorption.
  • spin dependent optical gain and spin dependent optical absorption is enabled by a class of materials with strong spin orbit coupling.
  • the transducer comprises an optical device which is coupled to a spin orbit material (e.g., a di-chalcogenide M0S2).
  • the transducer comprises electrical contacts that are used to receive spin electrical signal via spin orbit material.
  • signals are represented with lines. Some lines may be thicker, to indicate more constituent signal paths, and/or have arrows at one or more ends, to indicate primary information flow direction. Such indications are not intended to be limiting. Rather, the lines are used in connection with one or more exemplary embodiments to facilitate easier understanding of a circuit or a logical unit. Any represented signal, as dictated by design needs or preferences, may actually comprise one or more signals that may travel in either direction and may be implemented with any suitable type of signal scheme.
  • connection means a direct connection, such as electrical, mechanical, or magnetic connection between the things that are connected, without any intermediary devices.
  • coupled means a direct or indirect connection, such as a direct electrical, mechanical, or magnetic connection between the things that are connected or an indirect connection, through one or more passive or active intermediary devices.
  • circuit or “module” may refer to one or more passive and/or active components that are arranged to cooperate with one another to provide a desired function.
  • signal may refer to at least one current signal, voltage signal, magnetic signal, or data/clock signal.
  • the meaning of "a,” “an,” and “the” include plural references.
  • the meaning of "in” includes “in” and "on.”
  • scaling generally refers to converting a design (schematic and layout) from one process technology to another process technology and subsequently being reduced in layout area.
  • scaling generally also refers to downsizing layout and devices within the same technology node.
  • scaling may also refer to adjusting (e.g., slowing down or speeding up - i.e. scaling down, or scaling up respectively) of a signal frequency relative to another parameter, for example, power supply level.
  • substantially “close,” “approximately,” “near,” and “about,” generally refer to being within +/- 10% of a target value.
  • phrases “A and/or B” and “A or B” mean (A), (B), or (A and B).
  • phrase “A, B, and/or C” means (A), (B), (C), (A and B), (A and C), (B and C), or (A, B and C).
  • the terms “left” “right,” “front,” “back,” “top,” “bottom,” “over,” “under,” and the like in the description and in the claims, if any, are used for descriptive purposes and not necessarily for describing permanent relative positions.
  • spin and “magnetic moment” are used equivalent! ⁇ -. More rigorously, the direction of the spin is opposite to that of the magnetic moment, and the charge of the particle is negative (such as in the case of electron).
  • Fig. 1 illustrates conceptual block diagrams 100 of spin-to-optical and optical - to-spin converters, according to some embodiments of the disclosure.
  • transducer 101 is provided which converts spin current into optical output.
  • transducer 101 realizes the spin to optic transduction by spin dependent optical gain.
  • transducer 102 is provided which converts optical input into spin.
  • transducer 102 is realized by spin dependent optical absorption.
  • the spin orbit material contains a chalcogenide (and in some embodiments, transition metal di-chalcogenide) layer which is formed of a material selected from a group consisting of: graphene, TiS 2 .
  • LaCPS 2 LaOAsS 2 , ScOBiS 2 , GaOBiS 2 , AIOB1S2, LaOSbS 2 , B1OB1S2, YOB1S2, InOBiS 2 , LaOBiSe 2 , T1OB1S2, CeOBiS 2 , PrOBiS 2 , NdOBiS 2 , LaOBiS 2 , and SrFBiS 2 .
  • transducers 101 and 102 are implemented in the same structure. For example, depending on the applied stimulus, spin-to- optical or optical -to-spin conversion is achieved.
  • transducers 101/102 comprise a waveguide or an optical cavity formed by light confinement (e.g., by micro ring resonators, one dimensional (ID) photonic crystal cavity and/or two/three dimensional (2D/3D) photonic crystal cavities).
  • transducers 101/102 comprise an optical device which is coupled to a spin orbit material.
  • the transducer comprises electrical contacts that are used to receive spin electrical signal via spin orbit material.
  • Fig. 2 illustrates spin orbit material integrated optical device 200 with electric input, according to some embodiments of the disclosure.
  • device 200 comprises waveguide 201, layer of spin orbit material 202, first electrode 203, and second electrode 204.
  • waveguide 201 is formed of a material selected from a group consisting of: Si, Ge, SiGe, SiN, doped S1O2 glass, acrylic or acrylic glass (PMMA), polystyrene, diamond, and elements from the group III through V of the periodic table.
  • waveguide 201 is comprised in a micro ring resonator.
  • the spin orbit material for layer 202 is selected from a group consisting of: TiSe2, MoSe2, and
  • layer of spin orbit material 202 is formed of a material selected from a group consisting of: graphene, T1S2, WS2, M0S2, TiSe 2 , WSe 2 , MoSe 2 , B2S3, Sb 2 S 3 , Ta 2 S, Re S-.
  • LaCPS 2 LaOAsS 2 , ScOBiS 2 , GaOBiS 2 , AIOB1S2, LaOSbS 2 , B1OB1S2, YOB1S2, InOBiS 2 , LaOBiSe 2 , T1OB1S2, CeOBiS 2 , PrOBiS 2 , NdOBiS 2 , LaOBiS 2 , and SrFBiS 2 .
  • layer 202 comprises a material with high spin orbit coupling.
  • spin orbit material contains one or more of: Tantalum ( ⁇ - Ta), Ta, ⁇ -Tungsten ( ⁇ -W), W, Pt, Copper (Cu) doped with elements such as Iridium, Bismuth and any of the elements of 3d, 4d, 5d and 4f, 5f periodic groups in the Periodic Table which may exhibit high spin orbit coupling.
  • the layer of spin orbit material 202 belongs to a class of two dimensional (2D) materials.
  • 2D material or layers formed from transition metal di- chalcogenides exhibit high spin orbit coupling, which can produce strong spin to charge and charge to spin conversion.
  • each sulfur center is pyramidal and is connected to three molybdenum (Mo) centers.
  • Mo molybdenum
  • the 2D materials are selected from a group consisting of: Graphene, M0S2, WS2, MoSe2 with copper, silver, platinum, bismuth, Fluorine, Hydrogen adsorbents.
  • the 2D materials include extrinsic material such as graphene, M0S2, ⁇ VSe2, WS2, MoSe2 with Copper, Silver, Platinum, Bismuth, Fluorine, and Hydrogen adsorbents. These adsorbents are intrinsic material which are added on top of the extrinsic material.
  • first electrode 203 is doped with n-doped material, e.g. silicon doped with phosphorous. In some embodiments, first electrode 203 is adjacent to layer of spin orbit material 202. For example, first electrode 203 is in direct contact to layer of spin orbit material 202.
  • second electrode 204 is doped with p-doped material, e.g. silicon doped with boron. In some embodiments, second electrode 204 is adjacent to the lay er of spin orbit material 202. For example, second electrode 204 is in direct contact to the layer of spin orbit material 202.
  • first and second electrodes 203 and 204 are separated from one another.
  • first and second electrodes 203 and 204 are separated by a dielectric or insulator. Any suitable dielectric or insulator can be used. In some embodiments,
  • first and second electrodes 203 and 204 are formed of non-magnetic materials.
  • first and second electrodes 203 and 204 are formed of a material selected from a group consisting of: Cu, Ag, Au, and Al.
  • first and second electrodes 203 and 204 are formed of high conductivity non-magnetic metal(s) to reduce the resistance when in contact with layer of spin orbit material 202.
  • the non-magnetic metal(s) can be formed from one or more of: Cu, Co, a-Ta, Al, CuSi, or NiSi.
  • a potential voltage is applied across first and second electrodes 203 and 204.
  • the potential difference causes electron to inject into the layer of spin orbit material 202. These electrons become spin polarized because of SOC in the spin orbital material.
  • voltage is applied across first and second electrodes 203 and 204, holes are also generated.
  • the spin polarized electrons and holes annihilate to produce polarized photons in waveguide 201. These polarized photons are the light output of waveguide 201.
  • the layer of spin orbit material 202 interacts with the layer of spin orbit material 202 to generate spin polarized electrons and holes. These spin polarized electrons and holes can have spin-up or spin-down orientations depending on the polarization of the photons in waveguide 201.
  • the spin polarized electrons and holes are then detected via the current they produce between electrodes 203 and 204.
  • Fig. 3 illustrates spin orbit material integrated optical device 300 with cavity and with electric input, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 3 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • a cavity is added on one or both sides of waveguide
  • the cavity is a Bragg reflector which comprises layers 301 a/b and 303a/b at one end, and layers 304a/b and 305a'b at another end of waveguide 201.
  • the layer of the Bragg reflector are formed of alternating materials with different refractive index.
  • lay er 305a has a different refractive index than layer 305b
  • layer 304a has a different refractive index than layer 304b.
  • the refractive index of layers 304a and 304b are the same.
  • the refractive index of layers 305a and 305b are the same.
  • layer 301a has a different refractive index than layer 303b
  • layer 301b has a different refractive index than layer 303b.
  • the refractive index of layers 301a and 301b are the same.
  • the refractive index of layers 303a and 303b are the same.
  • the alternating layers of the Bragg reflectors have periodic variation of some characteristic (such as height) of a dielectric waveguide, resulting in periodic variation in the effective refractive index in the guide.
  • each layer of the Bragg reflectors causes a partial reflection of an optical wave.
  • the optical output from section 305 of the waveguide 201 is a coherent light generated from the electron spins in spin orbit material 302.
  • the layer of spin orbit material 302 is formed of a material selected from a group consisting of: graphene, TiS 2 , WS?., M0S2, TiSe2,
  • the di-chalcogenide material for layer 302 is selected from a group consisting of: TiSe2, MoSe2, ⁇ VSe2, S1S2, B2S3, Sb 2 S3, Ta2S, Re2S?, and semiconductors of the type MX2, with 'M' being a transition metal atom (e.g., Mo, W, etc.) and 'X' being a chalcogen atom (e.g., S, Se, or Te).
  • 'M' being a transition metal atom (e.g., Mo, W, etc.)
  • 'X' being a chalcogen atom (e.g., S, Se, or Te).
  • layer of spin orbit material 302 belongs to the class of
  • 2D materials with high spin orbit coupling exhibit high spin orbit coupling, which can produce strong spin to charge and charge to spin conversion.
  • the 2D materials are selected from a group consisting of: Graphene, M0S2, WS2, MoSe2 with copper, silver, platinum, bismuth, Fluorine, Hydrogen adsorbents.
  • the 2D materials include extrinsic material such as graphene, M0S2, WSe 2 , WS 2 , MoSe 2 with Copper, Silver, Platinum, Bismuth, Fluorine, and Hydrogen adsorbents. These adsorbents are intrinsic material which are added on top of the extrinsic material.
  • a high density 2D electron gas with high Rashba spin orbit coupling is used to generate spin dependent optical effects in the layer of spin orbit material 302.
  • the spin-orbit mechanism responsible for spin to charge conversion is described by the Rashba effect in 2D electron gases.
  • the Hamiltonian (energy) of spin-orbit coupling electrons in a 2D electron gas is:
  • H R a R (k x z). ⁇
  • a R is the Rashba coefficient, is the operator of momentum of electrons
  • z is a unit vector perpendicular to the 2D electron gas
  • ⁇ is the operator of spin of electrons.
  • the spin polarized electrons with direction of polarization in-plane experience an effective magnetic field dependent on the spin direction which is given as:
  • w m is width of the magnet 403/404
  • IREE is the IREE constant (with units of length) proportional to a R .
  • the net conversion of the drive charge current I d to magnetization dependent charge current is:
  • P is the spin polarization.
  • the spin polarization produces polarized photons when the spin polarized electrons combine with holes. These photons are then collected at one end of waveguide 201, in accordance with some embodiments.
  • Fig. 4 illustrates spin orbit material integrated optical device 400 with cavity and with ferromagnet contacts, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 4 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such. So as not to obscure the embodiments, differences between device 300 of Fig. 3 and device 400 of Fig. 4 are described.
  • first and second magnetic electrodes (or contacts) 403 and 404 are added on the layer of spin orbit material 302.
  • a spin logic device provides inputs to the first and second magnetic electrodes (or contacts) 403 and 404, respectively.
  • other logic stage(s) may provide input to first and second magnetic electrodes (or contacts) 403 and 404, respectively.
  • domain wall logic and/or magneto-electric logic may be used to inject spin currents to spin orbit material 302 via first and second magnetic electrodes (or contacts) 403 and 404, respectively.
  • first and second magnetic electrodes (or contacts) 403 and 404 are formed of CFGG (i.e., Cobalt (Co), Iron (Fe), Germanium (Ge), or Gallium (Ga) or a combination of them).
  • first and second magnetic electrodes (or contacts) 403 and 404 are formed from Heusler alloys.
  • Heusler alloys are ferromagnetic metal alloys based on a Heusler phase. Heusler phases are intermetallic with certain composition and face-centered cubic crystal structure. The ferromagnetic property of the Heusler alloys are a result of a double-exchange mechanism between neighboring magnetic ions.
  • the Heusler alloy is a material selected from a group consisting of: Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa Co 2 MnAl, Co 2 MnSi, Co 2 MnGa, Co 2 MnGe, Pd 2 MnAl, Pd 2 MnIn, Pd 2 MnSn, Pd 2 MnSb, Co 2 FeSi, Co 2 FeAl, Fe 2 VAl, Mn 2 VGa, Co 2 FeGe, MnGa, and MnGaRu.
  • first and second magnetic electrodes (or contacts) 403 and 404 are in-plane magnets.
  • the directions of magnetization of the first and second magnetic electrodes 403 and 404, respectively, are along the length of waveguide 201.
  • first and second magnetic electrodes (or contacts) 403 and 404 are perpendicular " magnets (e.g., with perpendicular magnetic anisotropy).
  • the directions of magnetization of the first and second magnetic electrodes 403 and 404, respectively are perpendicular to the length of waveguide 201.
  • the ferromagnetic layer 404 may determine their magnetization directions. For example, when the thickness of the ferromagnetic layer is above a certain threshold (depending on the material of the magnet, e.g. approximately 1.5 nm for CoFe), then the ferromagnetic layer exhibits magnetization direction which is in-plane. Likewise, when the thickness of the ferromagnetic layer is below a certain threshold (depending on the material of the magnet), then the ferromagnetic layer exhibits magnetization direction which is perpendicular to the plane of the magnetic layer.
  • a certain threshold depending on the material of the magnet, e.g. approximately 1.5 nm for CoFe
  • factors may also determine the direction of magnetization.
  • factors such as surface anisotropy (depending on the adjacent layers or a multi -layer composition of the ferromagnetic layer) and/or crystalline anisotropy (depending on stress and the crystal lattice structure modification such as FCC (face centered cubic lattice), BCC (body centered cubic lattice), or LlO-type of crystals, where L10 is a type of crystal class which exhibits perpendicular magnetizations), can also determine the direction of magnetization.
  • surface anisotropy depending on the adjacent layers or a multi -layer composition of the ferromagnetic layer
  • crystalline anisotropy depending on stress and the crystal lattice structure modification
  • FCC face centered cubic lattice
  • BCC body centered cubic lattice
  • LlO-type of crystals where L10 is a type of crystal class which exhibits perpendicular magnetizations
  • first and second magnetic electrodes (or contacts) 403 and 404) are formed of a stack of materials, where the materials for the stack are selected from a group consisting of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB, V, CoFeB, and MgO; MgO, CoFeB, Mo, CoFeB, and MgO; Mn x Ga y ; Materials with L10 symmetry; and materials with tetragonal crystal structure.
  • first and second magnetic electrodes (or contacts) 403 and 404 are formed of a single layer of one or more materials.
  • the single layer is formed of MnGa.
  • first and second magnetic electrodes (or contacts) 403 and 404 are formed with interfacial PMA
  • Fig. 5 illustrates mode selected spin orbit material integrated optical device
  • a circular polarizer (or filter) 501 is sandwiched between the layers (e.g., 304a/b and 305a/b) of the Bragg reflector and waveguide 201.
  • circular polarizer 501 behaves as a mode selector.
  • circular polarizer 501 is a right circular polarizer.
  • circular polarizer 501 may filter or pass clockwise circularly polarized light.
  • circular polarizer 501 is a left circular polarizer.
  • circular polarizer 501 may filter or pass counter-clockwise circularly polarized light.
  • circular polarizer can be rotated along their axis. Any known mechanism can be used for rotating the circular polarizer.
  • Circular polarizer 501 can be used to adjust light reflections as light is provided from waveguide section 305. As such, different absorption for right and left circular polarization is achieved.
  • Circular polarizer 501 can also be used for managing input or injected light, which is then converted to spin polarized electrons in magnets 403 and 404.
  • spin up or spin down polarization is achieved by circularly polarizing (right or left) the input injected light.
  • mode selection spin orbit material laser device 500 produces on/off key optical modulation since left or right circular polarization is not amenable to lasing (e.g., high loss for one of the polarization modes).
  • FIG. 6 illustrates top view 600 of a photonic crystal cavity spin orbit material laser, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 6 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • waveguide 601 is a one dimensional (ID) photonic crystal cavity with one or more holes 602.
  • holes 602 are etched from the host layer 601 and contain vacuum or air.
  • holes 602 are filled with a transparent dielectric material by the process of deposition. The cavity provides high selectivity to generate light due to optical resonance of the cavity.
  • the one or more holes 602 are periodic holes formed in waveguide 601.
  • waveguide 601 is formed of a material selected from a group consisting of: Si, Ge, SiGe, doped SiC glass, SiN, PMMA, polystyrene, diamond, and elements from the group III through V of the periodic table.
  • the input spin current is injected via magnetic contacts 403 and 404, and the output light propagates out of the optical cavity formed by holes 602.
  • input light is incident from the outside of the optical cavity formed by holes 602, and the output spin current is received by magnetic contacts 403 and 404.
  • Fig. 7 illustrates plot 700 showing reflectivity of parts of the optical cavity
  • x-axis is wavelength in nanometer
  • y- axis is dimensionless optical transmittivity or reflectivity.
  • Plot 700 shows that light is resonant with the cavity at a particular wavelength (e.g., 1550 nm). Therefore, laser emission for spin-to-optical conversion and detection of polarized light for optical-to-spin conversion may occur predominantly at this wavelength.
  • Fig. 8 illustrates top view 800 of an enhanced quality factor two-dimensional photonic crystal cavity spin orbit material laser, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 8 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • waveguide 801 is two dimensional (2D) photonic crystal cavity with one or more holes 802.
  • the cavity provides high selectivity to generated light due to optical resonance of the cavity.
  • the one or more holes 802 are periodic holes formed in waveguide 801.
  • waveguide 801 is formed of a material selected from a group consisting of: Si, Ge, SiGe, doped S1O2 glass, SiN, PMMA, polystyrene, diamond, and elements from the group III through V of the periodic table.
  • the input spin current is injected via magnetic contacts
  • input light is incident from the outside of the optical cavity formed by holes 802, and the output spin current is received by magnetic contacts 403 and 404.
  • Fig. 9 illustrates method flowchart 900 of converting spin electrical signal into optical signal, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 9 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such. The illustrated embodiments can be performed in a different order, and some actions/blocks may be performed in parallel. Some of the blocks and/or operations listed in Fig. 9 are optional in accordance with certain embodiments. The numbering of the blocks presented is for the sake of clarity and is not intended to prescribe an order of operations in which the various blocks must occur. Additionally, operations from the various flows may be utilized in a variety of combinations.
  • spin polarized electrons are generated in the layer of spin orbit material.
  • the spin polarized electrons annihilate with holes to generate polarized photons.
  • the polarized photons are received from one end of the waveguide 201.
  • one or more polarizers 501 are adjusted (e.g., clockwise or anti-clock wise) to adjust the polarization of light (i.e., photons).
  • Fig. 10 illustrates method flowchart 1000 of converting optical signal to spin electrical signal, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 10 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such. The illustrated embodiments can be performed in a different order, and some actions/blocks may be performed in parallel. Some of the blocks and/or operations listed in Fig. 10 are optional in accordance with certain embodiments. The numbering of the blocks presented is for the sake of clarity and is not intended to prescribe an order of operations in which the various blocks must occur. Additionally, operations from the various flows may be utilized in a variety of combinations.
  • a light source e.g., a spin-to-light transducer
  • the injected light causes electrons in the spin orbit material layer (202 or 302) to become spin polarized. These spin polarized electrons that then detected by electrodes 203 and 204 (e.g., via a voltage detector) or by ferromagnets 403 and 404.
  • current flow is detected from first electrode 203 to second electrode 204.
  • one or more polarizers 501 are adjusted (e.g., clockwise or anti-clock wise) to adjust the polarization of injected photons.
  • spin-up or spin-down electrons are achieved in ferromagnets 403 and 404.
  • spin up electrons are detected in ferromagnets 403 and 404.
  • spin down electrons are detected in ferromagnets 403 and 404.
  • Fig. 11 illustrates a smart device or a computer system or a SoC (System-on-
  • the transistors in various circuits and logic blocks described here are metal oxide semiconductor (MOS) transistors or their derivatives, where the MOS transistors include drain, source, gate, and bulk terminals.
  • the transistors and/or the MOS transistor derivatives also include Tri-Gate and FinFET transistors, Gate All Around Cylindrical Transistors, Tunneling FET (TFET), Square Wire, or Rectangular Ribbon Transistors, ferroelectric FET (FeFETs), or other devices implementing transistor functionality like carbon nanotubes or spintronic devices.
  • MOSFET symmetrical source and drain terminals i.e., are identical terminals and are interchangeably used here.
  • a TFET device on the other hand, has asymmetric Source and Drain terminals.
  • BJT PNP/NPN Bi-polar junction transistors
  • BiCMOS BiCMOS
  • CMOS complementary metal oxide semiconductor
  • computing device 1600 represents a mobile computing device, such as a computing tablet, a mobile phone or smart-phone, a wireless-enabled e- reader, or other wireless mobile device. It will be understood that certain components are shown generally, and not all components of such a device are shown in computing device 1600.
  • optical-to-spin converter 101 and/or spin-to-topical converter 102 is provided in computing device 1600.
  • computing device 1600 includes first processor 1610 with spin-optical transducer, according to some embodiments discussed.
  • Other blocks of the computing device 1600 may also include spin- optical transducer, according to some embodiments.
  • the various embodiments of the present disclosure may also comprise a network interface within 1670 such as a wireless interface so that a system embodiment may be incorporated into a wireless device, for example, cell phone or personal digital assistant.
  • processor 1610 can include one or more physical devices, such as microprocessors, application processors,
  • microcontrollers programmable logic devices, or other processing means.
  • the processing operations performed by processor 1610 include the execution of an operating platform or operating system on which applications and/or device functions are executed.
  • the processing operations include operations related to I/O (input/output) with a human user or with other devices, operations related to power management, and/or operations related to connecting the computing device 1600 to another device.
  • the processing operations may also include operations related to audio I/O and/or display I/O.
  • computing device 1600 includes audio subsystem
  • Audio functions can include speaker and/or headphone output, as well as microphone input. Devices for such functions can be integrated into computing device 1600, or connected to the computing device 1600. In one embodiment, a user interacts with the computing device 1600 by providing audio commands that are received and processed by processor 1610.
  • computing device 1600 comprises display subsystem
  • Display subsystem 1630 represents hardware (e.g., display devices) and software (e.g., drivers) components that provide a visual and/or tactile display for a user to interact with the computing device 1600.
  • Display subsystem 1630 includes display interface 1632, which includes the particular screen or hardware device used to provide a display to a user.
  • display interface 1632 includes logic separate from processor 1610 to perform at least some processing related to the display.
  • display subsystem 1630 includes a touch screen (or touch pad) device that provides both output and input to a user.
  • computing device 1600 comprises I/O controller 1640.
  • I/O controller 1640 represents hardware devices and software components related to interaction with a user. I/O controller 1640 is operable to manage hardware that is part of audio subsystem 1620 and/or display subsystem 1630. Additionally, I/O controller 1640 illustrates a connection point for additional devices that connect to computing device 1600 through which a user might interact with the system. For example, devices that can be attached to the computing device 1600 might include microphone devices, speaker or stereo systems, video systems or other display devices, keyboard or keypad devices, or other I/O devices for use with specific applications such as card readers or other devices.
  • I/O controller 1640 can interact with audio subsystem
  • display subsystem 1630 For example, input through a microphone or other audio device can provide input or commands for one or more applications or functions of the computing device 1600. Additionally, audio output can be provided instead of, or in addition to display output. In another example, if display subsystem 1630 includes a touch screen, the display device also acts as an input device, which can be at least partially managed by I/O controller 1640. There can also be additional buttons or switches on the computing device 1600 to provide I/O functions managed by I/O controller 1640.
  • I/O controller 1640 manages devices such as accelerometers, cameras, light sensors or other environmental sensors, or other hardware that can be included in the computing device 1600.
  • the input can be part of direct user interaction, as well as providing environmental input to the system to influence its operations (such as filtering for noise, adjusting displays for brightness detection, applying a flash for a camera, or other features).
  • computing device 1600 includes power management
  • Memory subsystem 1660 includes memory devices for storing information in computing device 1600.
  • Memory can include nonvolatile (state does not change if power to the memory device is interrupted) and/or volatile (state is indeterminate if power to the memory device is interrupted) memory devices.
  • Memory subsystem 1660 can store application data, user data, music, photos, documents, or other data, as well as system data (whether long-term or temporary) related to the execution of the applications and functions of the computing device 1600.
  • Elements of embodiments are also provided as a machine-readable medium
  • the machine-readable medium may include, but is not limited to, flash memory, optical disks, CD-ROMs, DVD ROMs, RAMs, EPROMs, EEPROMs, magnetic or optical cards, phase change memory (PCM), or other types of machine-readable media suitable for storing electronic or computer- executable instructions.
  • embodiments of the disclosure may be downloaded as a computer program (e.g., BIOS) which may be transferred from a remote computer (e.g., a server) to a requesting computer (e.g., a client) by way of data signals via a communication link (e.g., a modem or network connection).
  • BIOS a computer program
  • a remote computer e.g., a server
  • a requesting computer e.g., a client
  • a communication link e.g., a modem or network connection
  • computing device 1600 comprises connectivity 1670.
  • Connectivity 1670 includes hardware devices (e.g., wireless and/or wired connectors and communication hardware) and software components (e.g., drivers, protocol stacks) to enable the computing device 1600 to communicate with external devices.
  • the computing device 1600 could be separate devices, such as other computing devices, wireless access points or base stations, as well as peripherals such as headsets, printers, or other devices.
  • Connectivity 1670 can include multiple different types of connectivity. To generalize, the computing device 1600 is illustrated with cellular connectivity 1672 and wireless connectivity 1674.
  • Cellular connectivity 1672 refers generally to cellular network connectivity provided by wireless carriers, such as provided via GSM (global system for mobile communications) or variations or derivatives, CDMA (code division multiple access) or variations or derivatives, TDM (time division multiplexing) or variations or derivatives, or other cellular service standards.
  • Wireless connectivity (or wireless interface) 1674 refers to wireless connectivity that is not cellular, and can include personal area networks (such as Bluetooth, Near Field, etc.), local area networks (such as Wi-Fi), and/or wide area networks (such as WiMax), or other wireless communication.
  • Connectivity 1670 includes parallel sensing arrays as described with reference to Figs. 10-13.
  • computing device 1600 comprises peripheral connections 1680.
  • Peripheral connections 1680 include hardware interfaces and connectors, as well as software components (e.g., drivers, protocol stacks) to make peripheral connections.
  • the computing device 1600 could both be a peripheral device ("to" 1682) to other computing devices, as well as have peripheral devices ("from” 1684) connected to it.
  • the computing device 1600 commonly has a "docking" connector to connect to other computing devices for purposes such as managing (e.g., downloading and/or uploading, changing, synchronizing) content on computing device 1600.
  • a docking connector can allow computing device 1600 to connect to certain peripherals that allow the computing device 1600 to control content output, for example, to audiovisual or other systems.
  • the computing device 1600 can make peripheral connections 1680 via common or standards-based connectors.
  • Common types can include a Universal Serial Bus (USB) connector (which can include any of a number of different hardware interfaces), DisplayPort including MiniDisplayPort (MDP), High Definition Multimedia Interface (HDMI), Firewire, or other types.
  • USB Universal Serial Bus
  • MDP MiniDisplayPort
  • HDMI High Definition Multimedia Interface
  • Firewire or other types.
  • an apparatus which comprises: a waveguide; and a layer of material with high spin orbit coupling material adjacent to the waveguide.
  • the apparatus comprises a first electrode doped with n-type dopant, wherein the first electrode is adjacent to the layer of high spin orbit coupling material.
  • the apparatus comprises a second electrode doped with a p-type dopant, wherein the second electrode is adjacent to the layer of high spin orbit coupling material, and wherein the first and second electrodes are separated from one another.
  • the first and second electrodes comprises a material selected from a group consisting of: Cu, Ag, Au, and Al.
  • the apparatus comprises a first set of Bragg reflectors adjacent to a first end of the waveguide.
  • the apparatus comprises a circular polarizer sandwiched between the first set of Bragg reflectors and the first end of the waveguide.
  • the apparatus comprises a second set of Bragg reflectors adjacent to another end of the waveguide.
  • the layer of high spin orbit coupling material comprises a material selected from a group consisting of: graphene, TiS >.
  • the waveguide comprises a material selected from a group consisting of: Si, SiN, Diamond, elements from the group III column of the periodic column through V of the periodic table.
  • the waveguide comprises micro ring resonators.
  • the waveguide includes holes.
  • a system which comprises: a memory; a processor coupled to the memory, the processor having an apparatus according to the apparatus described above; and a wireless interface for allowing the processor to
  • an apparatus which comprises: a waveguide; a layer of high spin orbit coupling material adjacent to the waveguide; a first ferromagnet adjacent to the layer of high spin orbit coupling material; and a second ferromagnet adjacent to the layer of high spin orbit coupling material, wherein the first and second ferromagnets are separated from one another by a distance.
  • the first and second ferromagnets comprises one or a combination of materials selected from a group consisting of a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, and Yttrium Iron Garnet (YIG).
  • the Heusler alloy is a material selected from a group consisting of: CibMnAl, Cu 2 MnIn, Cu 2 MnSn : Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa
  • the first and second ferromagnets comprises a stack of materials, wherein the materials for the stack are selected from a group consisting of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB, V, CoFeB, and MgO; MgO, CoFeB, Mo, CoFeB, and MgO; Mn x Ga y ; Materials with L10 symmetry; and materials with tetragonal crystal structure.
  • the materials for the stack are selected from a group consisting of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB, V, CoFeB, and MgO; M
  • the layer of high spin orbit coupling material comprises a material selected from a group consisting of: graphene, TiS 2 , WS2, M0S2, TiSe 2 , WSe 2 , MoSe 2 , B 2 S 3 , Sb 2 S 3 , Ta 2 S, Re 2 S?, LaCPS 2 , LaOAsS 2 , ScOBiS 2 , GaOBiS 2 , A10BiS 2 , LaOSbS 2 , BiOBiS 2 , YOBiS 2 , InOBiS 2 , LaOBiSe 2 , TiOBiS 2 , CeOBiS 2 , PrOBiS 2 , NdOBiS 2 , LaOBiS 2 , and SrFBiS 2 .
  • the first and second ferromagnets comprises a single layer of one or more materials.
  • the single layer is formed of MnGa.
  • the apparatus comprises a first set of Bragg reflectors adjacent to a first end of the waveguide.
  • the apparatus comprises a circular polarizer sandwiched between the first set of Bragg reflectors and the first end of the waveguide.
  • the apparatus comprising a second set of Bragg reflectors adjacent to another end of the waveguide.
  • the waveguide comprises a material selected from a group consisting of: Si, SiN, Diamond, and elements from the group III column of the periodic column through V of the periodic table.
  • the waveguide comprises micro ring resonators.
  • the waveguide includes holes.
  • a system which comprises: a memory; a processor coupled to the memory, the processor having an apparatus according to the apparatus described above; and a wireless interface for allowing the processor to
  • a method which comprises applying a voltage across first and second electrodes, wherein the first and second electrodes are adjacent to a layer of high spin orbit coupling material; and receiving photons from one end of a waveguide which is adjacent to the layer of high spin orbit coupling material.
  • the method comprises adjusting direction of a polarizer, coupled to the waveguide, to adjust direction of the photons.
  • the first and second electrodes comprises a material selected from a group consisting of: Cu, Ag, Au, and Al.
  • the layer of di-chalcogenide comprises a material selected from a group consisting of: graphene, T1S2, WS2.
  • M0S2 TiSte, ⁇ VSe2, MoSe2, B2S3, Sb 2 S 3 , Ta 2 S, Re 2 S7, LaCPS 2 , LaOAsS2, ScOBiS 2 , GaOBiS 2 , AIOB1S2, LaOSbS 2 , B1OB1S2, YOBiS 2 InOBiS 2 , LaOBiSe 2 , T1OB1S2, CeOBiS 2 , PrOBiS 2 , NdOBiS 2 , LaOBiS 2 , and SrFBiS 2 .
  • a method which comprises: injecting light into a waveguide; and detecting a current flow from a first electrode to a second electrode, wherein the first and second electrodes are adjacent to a layer of high spin orbit coupling material.
  • the method comprises adjusting direction of a polarizer, coupled to the waveguide, to adjust direction of the injected light.
  • the first and second electrodes comprises a material selected from a group consisting of: Cu, Ag, Au, and Al.
  • the layer of high spin orbit coupling material comprises a material selected from a group consisting of: graphene, TiS 2 , WS2, M0S2, TiSe2,

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

L'invention concerne un appareil comprenant : un guide d'ondes ; et une couche de substance à fort couplage spin-orbite adjacente au guide d'ondes. L'invention concerne également un appareil qui comprend : un guide d'ondes ; une couche de substance à fort couplage spin-orbite adjacente au guide d'ondes ; une première substance ferromagnétique adjacente à la couche de substance à fort couplage spin-orbite ; et une seconde substance ferromagnétique adjacente à la couche de substance à fort couplage spin-orbite, les première et seconde substances ferromagnétiques étant séparées l'une de l'autre par une certaine distance.
PCT/US2016/039899 2016-06-28 2016-06-28 Nanolaser pour conversion spin-optique et optique-spin Ceased WO2018004549A1 (fr)

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US11152760B2 (en) * 2016-12-14 2021-10-19 Forschungsverbund Berlin E.V. Light emitter device based on a photonic crystal with pillar- or wall-shaped semiconductor elements, and methods for the operation and production thereof
WO2022077679A1 (fr) * 2020-10-15 2022-04-21 北京工业大学 Procédé de préparation d'alliage de manganèse-gallium dopé par du sr et aimant nanocristallin à haute coercivité comprenant l'alliage
CN116299788A (zh) * 2023-03-30 2023-06-23 电子科技大学 一种非中心对称TMDs超表面极化涡旋发生器及设计方法

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US11152760B2 (en) * 2016-12-14 2021-10-19 Forschungsverbund Berlin E.V. Light emitter device based on a photonic crystal with pillar- or wall-shaped semiconductor elements, and methods for the operation and production thereof
US20210218213A1 (en) * 2020-01-15 2021-07-15 Ceromaze Inc. Thin film maser emitter and thin panel phased array of emitters
US11872386B2 (en) * 2020-01-15 2024-01-16 Emad Eskandar Thin film maser emitter and thin panel phased array of emitters
WO2022077679A1 (fr) * 2020-10-15 2022-04-21 北京工业大学 Procédé de préparation d'alliage de manganèse-gallium dopé par du sr et aimant nanocristallin à haute coercivité comprenant l'alliage
CN116299788A (zh) * 2023-03-30 2023-06-23 电子科技大学 一种非中心对称TMDs超表面极化涡旋发生器及设计方法

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