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WO2018097518A1 - Flat cable manufacturing method - Google Patents

Flat cable manufacturing method Download PDF

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Publication number
WO2018097518A1
WO2018097518A1 PCT/KR2017/012625 KR2017012625W WO2018097518A1 WO 2018097518 A1 WO2018097518 A1 WO 2018097518A1 KR 2017012625 W KR2017012625 W KR 2017012625W WO 2018097518 A1 WO2018097518 A1 WO 2018097518A1
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WO
WIPO (PCT)
Prior art keywords
base substrate
masking
layer
substrate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2017/012625
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French (fr)
Korean (ko)
Inventor
단성백
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Amogreentech Co Ltd
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Amogreentech Co Ltd
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Filing date
Publication date
Application filed by Amogreentech Co Ltd filed Critical Amogreentech Co Ltd
Publication of WO2018097518A1 publication Critical patent/WO2018097518A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0036—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B7/00—Insulated conductors or cables characterised by their form
    • H01B7/04—Flexible cables, conductors, or cords, e.g. trailing cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B7/00—Insulated conductors or cables characterised by their form
    • H01B7/08—Flat or ribbon cables

Definitions

  • the present invention relates to a flat cable manufacturing method, and more particularly, to a flat cable manufacturing method (FAT CABLE MANUFACTURING METHOD) connected to a circuit board mounted in a home appliance for transmitting power.
  • a flat cable manufacturing method FAT CABLE MANUFACTURING METHOD
  • a plurality of circuit boards are mounted in home appliances such as televisions.
  • Circuit boards are connected by various types of cables for power supply or signal transmission. That is, the circuit board is a cable such as a flexible printed circuit board (FPC), a flexible flat cable (FFC), a wire (Wire), etc. according to the voltage required for power supply or signal transmission .
  • the flexible printed circuit board cable is mainly used for a circuit board requiring a low voltage.
  • Flexible flat cable is used for circuit boards requiring medium voltage.
  • Wire is used for circuit boards that require high voltage.
  • a flexible flat cable mainly used for medium voltage circuit boards has a width of about 3 cm and a maximum length of about 30 cm, which makes it difficult to connect circuit boards embedded in large televisions.
  • the present invention has been proposed to solve the above-mentioned conventional problems, and a method of manufacturing a flat cable having a length of approximately 50 cm by forming a metal pattern on a base substrate on which a masking substrate having a metal pattern region is opened by a roll-to-roll process is laminated.
  • the purpose is to provide.
  • Another object of the present invention is to provide a flat cable manufacturing method having a length of approximately 50 cm or more by continuously manufacturing a flat cable having a metal pattern formed by a roll-to-roll process.
  • a flat cable manufacturing method comprises the steps of preparing a base substrate in the form of a roll, preparing a masking substrate in the form of a roll open the metal pattern formation region, the base substrate and masking Laminating the substrate, forming a seed layer on the base substrate on which the masking substrate is laminated, forming a plating layer on the seed layer, and removing the masking substrate from the base substrate.
  • a method for manufacturing a flat cable includes preparing a base substrate having a metal layer formed on at least one surface thereof, and removing a part of the metal layer through a roll-to-roll process to form a metal pattern on the base substrate. It may include the step.
  • the method of manufacturing a flat cable has the effect of forming a flat cable having a length of approximately 50 cm or more by forming a metal pattern on a base substrate on which a masking substrate having an open metal pattern region is laminated in a roll-to-roll process.
  • the flat cable manufacturing method is a roll-to-roll process to form a metal pattern on the base substrate on which the masking substrate with the metal pattern region is opened, thereby manufacturing a flat cable without a photo resist process and etching process. And it is possible to minimize the product cost by simplifying the manufacturing process.
  • the flat cable manufacturing method has an effect of producing a flat cable having a length of approximately 50 cm or more by continuously manufacturing a flat cable having a metal pattern formed in a roll-to-roll process.
  • the flat cable manufacturing method by removing a portion of the metal layer of the base substrate to form a metal pattern through the photoresist layer forming, laser exposure, development, etching and peeling process while transferring the base substrate in a roll-to-roll process when forming the metal pattern, There is an effect that a flat cable having a length of about 50 cm or more can be produced.
  • the flat cable manufacturing method removes a portion of the metal layer of the base substrate by forming a metal pattern through a masking layer forming, etching, and peeling process while transferring the base substrate by a roll-to-roll process when forming the metal pattern, thereby forming a length of about 50 cm or more.
  • FIG 1 and 2 are views for explaining a flat cable manufacturing method according to a first embodiment of the present invention.
  • 3 and 4 are views for explaining the lamination step of FIG.
  • FIG. 5 is a view for explaining a flat cable manufacturing method according to a first embodiment of the present invention.
  • FIG. 6 and 7 are views for explaining a flat cable manufacturing method according to a second embodiment of the present invention.
  • FIG. 8 and 9 are views for explaining the metal pattern forming step of FIG.
  • FIG. 10 is a view for explaining a flat cable manufacturing method according to a second embodiment of the present invention.
  • 11 and 12 are views for explaining a flat cable manufacturing method according to a third embodiment of the present invention.
  • FIG. 13 and 14 are views for explaining the metal pattern forming step of FIG.
  • 15 is a view for explaining a flat cable manufacturing method according to a third embodiment of the present invention.
  • a method of manufacturing a flat cable includes preparing a base substrate 110 (S110), preparing a masking substrate 120 (S120), and a base. Stacking the masking substrate 120 on the substrate 110 (S130), forming the seed layer 130 on the base substrate 110 (S140), and forming the plating layer 140 on the seed layer 130. Step S150 and removing the masking substrate 120 from the base substrate 110 (S160).
  • the flat cable manufacturing method to manufacture a flat cable through a continuous roll to roll (Roll To Roll) process.
  • FIG. 2 is demonstrated with reference to the short side side cross section of a flat cable in order to demonstrate the flat cable manufacturing method easily.
  • the base substrate 110 Preparing the base substrate 110 (S110) prepares the base substrate 110 in the form of a film to be the base of the flat cable.
  • the base substrate 110 may be formed of a flexible or elastic material such as polyimide (PI), polyethylene phthalate (PET), and thermoplastic polyurethane (TPU).
  • PI polyimide
  • PET polyethylene phthalate
  • TPU thermoplastic polyurethane
  • Preparing the base substrate 110 prepares the base substrate 110 in a roll form for a roll-to-roll process. That is, in the preparing of the base substrate 110 (S110), the base substrate 110 in a roll form is prepared by winding the base substrate 110 on a roll.
  • the masking substrate 120 having a region where the metal pattern is to be opened is prepared.
  • the masking substrate 120 may form a region (hereinafter, the metal pattern forming region 221) on which the metal pattern is to be formed on the masking film (or tape) through a process such as mold punching, laser processing, and wheel cutting.
  • the masking substrate 120 is prepared by removing (opening).
  • the masking film (or tape) may be any one of paper, silicone, and PET.
  • the preparing of the masking substrate 120 prepares the masking substrate 120 in a roll form for a roll-to-roll process. That is, in the preparing of the masking substrate 120 (S120), the masking substrate 120 is wound on a roll to prepare the masking substrate 120 in a roll shape.
  • the masking substrate 120 may be prepared by winding a plurality of masking films (or tapes) formed in a ribbon shape so as to be spaced apart from each other. At this time, the spacing between the masking substrate 120 is preferably to correspond to the width of the metal pattern.
  • step S130 of laminating the masking substrate 120 to the base substrate 110 the masking substrate 120 is laminated to at least one surface of the base substrate 110 through a roll-to-roll process.
  • the step (S130) of laminating the masking substrate 120 to the base substrate 110 is the step of applying the adhesive 150 to the masking substrate 120 (S132) and laminating (S134).
  • step S132 Applying the adhesive 150 to the masking substrate 120 (S132) to apply the adhesive 150 to one surface of the masking substrate 120. That is, in step S132, the adhesive 150 is applied to the masking substrate 120, the masking substrate 120 in a roll form is supplied to the printing roll, and the adhesive 150 is applied to one surface of the masking substrate 120 in the printing roll. do. In this case, the adhesive 150 is applied to the masking substrate 120 (S132) to apply the adhesive 150 to one surface of the masking substrate 120 to be bonded to the base substrate 110.
  • the adhesive 150 is applied to the masking substrate 120 (S132) in step (S160) of removing the masking substrate 120 to be described later to facilitate the removal of the masking substrate 120, the adhesive having a low adhesive force ( 150 is applied to the masking substrate 120.
  • the adhesive sheet may be adhered to one surface of the masking substrate 120. That is, in step S132, the adhesive 150 is applied to the masking substrate 120, and the rolled masking substrate 120 is supplied to the printing roll, and the adhesive sheet in the roll form is printed on one surface of the masking substrate 120. Glue. In this case, in the step of applying the adhesive 150 to the masking substrate 120 (S132), the adhesive sheet is adhered to one surface of the masking substrate 120 to be bonded to the base substrate 110.
  • the masking substrate 120 is laminated on at least one surface of the base substrate 110. That is, in the step of laminating (S134), the masking substrate 120 and the base substrate 110 to which the adhesive 150 is applied (or the adhesive sheet is attached) are supplied to the lamination rolls, and the masking substrate is provided on at least one surface of the base substrate 110. Laminate 120. At this time, the step of laminating (S134) may apply a pressure through the lamination roll, or may apply the pressure and heat to the masking substrate 120 to the base substrate 110.
  • the seed layer 130 is formed on the base substrate 110 through a physical deposition process.
  • the physical vapor deposition process may be any one of vacuum deposition, evaporation, ebeam deposition, laser deposition, sputtering, arc ion plating.
  • the seed layer 130 In the forming of the seed layer 130 (S140), the seed layer may be formed only in a region exposed by the open region of the masking substrate 120 (that is, the metal pattern forming region 221) of the entire region of the base substrate 110. 130).
  • the seed layer 130 which is a metal including nickel copper (NiCu) or copper (Cu), is formed.
  • the seed layer 130 may be formed to a thickness of about 15nm when formed of nickel copper, and may be formed to a thickness of about 20nm to 100nm when formed of copper.
  • the plating layer 140 is formed on the seed layer 130 through a physical deposition process.
  • the physical vapor deposition process may be any one of vacuum deposition, evaporation, ebeam deposition, laser deposition, sputtering, arc ion plating.
  • the plating layer 140 is formed only in a region exposed by the open region of the masking substrate 120 (that is, the top surface of the seed layer 130).
  • Forming the plating layer 140 (S150) forms a plating layer 140 which is a metal including at least one of copper (Cu) and silver (Ag). At this time, the plating layer 140 may be formed to a thickness of about 15 ⁇ m.
  • Removing the masking substrate 120 removes the masking substrate 120 from the base substrate 110.
  • a coating layer 162 is formed on the base substrate 110 on which the seed layer 130 and the plating layer 140 are formed.
  • terminals 166 connected to both ends of the metal pattern 164 (that is, the seed layer 130 and the plating layer 140) formed on the base substrate 110 are formed.
  • the flat cable manufacturing method produces a flat cable 160 having a length of approximately 50cm or more.
  • the plating layer 140 may be formed on the seed layer 130 after the masking substrate 120 is removed from the base substrate 110 (S160). In this case, in the method of manufacturing a flat cable, the plating layer 140 is formed on the seed layer 130 by forming the plating layer 140 on the seed layer 130 after removing the masking substrate 120.
  • a method of manufacturing a flat cable according to a second embodiment of the present invention includes preparing a base substrate 210 (S210). Forming a metal pattern 220 on the base substrate 210 (S220) and forming a protective coating layer 230 (S230). At this time, the flat cable manufacturing method is performed continuously through the roll-to-roll process step S200 and S300.
  • the base film 214 on which the metal layer 212 is formed is prepared as the base substrate 210.
  • the base substrate 210 having a roll shape may be prepared by winding the substrate on which the metal layer 212 is formed on at least one surface of the substrate film 214.
  • the metal layer 212 may be any one of copper (Cu) and silver (Ag), and the base film 214 may include polyimide (PI), polyethylene phthalate (PET), and thermoplastic polyurethane (TPU); Thermoplastic Poly Urethane).
  • PI polyimide
  • PET polyethylene phthalate
  • TPU thermoplastic polyurethane
  • a flexible copper clad laminate (FCCL) in which copper (Cu) is laminated on the surface may be wound to prepare a base substrate 210 in a roll form.
  • FCCL flexible copper clad laminate
  • Cu copper
  • the metal pattern 220 In the forming of the metal pattern 220 (S220), a part of the metal layer 212 of the base substrate 210 is removed to form the metal pattern 220. In this case, in the forming of the metal pattern 220 (S220), the metal pattern 220 is formed on at least one surface of the base substrate 210 which is continuously supplied through a roll-to-roll process.
  • the photoresist layer 240 is formed on at least one surface of the base substrate 210.
  • the photoresist layer 240 may be formed on the base substrate 210 by laminating the photosensitive dry film or applying a photoresist liquid.
  • the step (S221) of forming the photoresist layer 240 may form the photoresist layer 240 by any one of spin coating, laminating, comma roll coating, gravure coating, doctor blade method, spray method and electrospinning. have.
  • the exposing step S223 a region of the photoresist layer 240 on which the metal pattern 220 is to be formed is exposed and cured.
  • the exposing step S223 exposes the photoresist layer 240 through a laser exposure (LDI) process to form fine gaps between the metal patterns 220.
  • LPI laser exposure
  • the developing step S225 a region in which the metal pattern 220 is not formed in the photoresist layer 240 is developed. That is, the developing step S225 develops and removes the uncured photoresist layer 240 in the exposing step S223. At this time, the developing step (S225) is removed by melting the uncured photoresist layer 240 with a developer.
  • the metal layer 212 of the base substrate 210 is etched using the cured photoresist layer 240 to form a metal pattern 220.
  • the photoresist layer 240 remaining on the metal pattern 220 (that is, the metal layer 212) is removed.
  • the photoresist layer 240 on the metal pattern 220 is removed through a stripping process.
  • the protective coating layer 230 is formed on the base substrate 210 on which the metal pattern 220 is formed.
  • the forming of the protective coating layer 230 (S230) is a roll base roll coating the coating liquid on the surface (that is, at least one of the upper and lower surfaces) of the base substrate 210, the metal pattern 220 is formed through a base substrate ( After applying to the coating 210 to cure or to coat the coating sheet on the base substrate 210 to form a protective coating 230 to protect the metal pattern 220.
  • the protective coating layer 230 is an example of a PI coating layer or a PAI coating layer.
  • the flat cable manufacturing method cuts the base substrate 210 continuously produced through a roll-to-roll process at predetermined intervals.
  • terminals 262 connected to both ends of the metal pattern 220 are formed to manufacture the flat cable 260.
  • the flat cable manufacturing method produces a flat cable 260 having a length of approximately 50cm or more.
  • the base film 314 on which the metal layer 312 is formed is prepared as the base substrate 310.
  • the base substrate 310 having a roll shape is prepared by winding the substrate on which the metal layer 312 is formed on at least one surface of the substrate film 314.
  • the metal layer 312 may be any one of copper (Cu) and silver (Ag), and the base film 314 may include polyimide (PI), polyethylene phthalate (PET), and thermoplastic polyurethane (TPU); Thermoplastic Poly Urethane).
  • PI polyimide
  • PET polyethylene phthalate
  • TPU thermoplastic polyurethane
  • FCCL flexible copper clad laminate
  • Cu copper
  • the metal pattern 320 In the forming of the metal pattern 320 (S320), a part of the metal layer 312 of the base substrate 310 is removed to form the metal pattern 320. In this case, in the forming of the metal pattern 320 (S320), the metal pattern 320 is formed on at least one surface of the base substrate 310 which is continuously supplied through a roll-to-roll process.
  • the forming of the metal pattern 320 may include forming the masking layer 340 (S322) and etching the base substrate 310 (S324). In operation S326, the masking layer 340 is removed.
  • the masking layer 340 is formed on at least one surface of the base substrate 310. That is, in operation S322, the masking layer 340 may be formed by forming a masking layer 340 having a shape corresponding to the metal pattern 320 on at least one surface of the upper and lower surfaces of the base substrate 310. Form.
  • an etching resist is applied to at least one surface of the base substrate 310 to form the masking layer 340.
  • the forming of the masking layer 340 (S322) is an example in which the masking layer 340 is formed by applying (printing) an etching resist to at least one surface of the base substrate 310 using a roll printer.
  • the etching of the base substrate 310 may be performed by etching part of the metal layer 312 of the base substrate 310 by using a masking layer 340 formed on the metal layer 312 of the base substrate 310 as a barrier.
  • the metal pattern 320 is formed.
  • Removing the masking layer 340 removes the masking layer 340 remaining on the metal pattern 320 (that is, the metal layer 312). In this case, in step S326 of removing the masking layer 340, the masking layer 340 remaining on the metal pattern 320 is removed through a stripping process.
  • the protective coating layer 330 is formed on the base substrate 310 on which the metal pattern 320 is formed.
  • the forming of the protective coating layer 330 (S330) is a base substrate (the coating liquid on the surface (that is, at least one of the upper and lower surfaces) of the base substrate 310, the metal pattern 320 is formed through a roll-to-roll process After coating to 310 to cure, or to coat the coating sheet on the base substrate 310 to form a protective coating layer 330 to protect the metal pattern (320).
  • the protective coating layer 330 is an example of a PI coating layer or a PAI coating layer.
  • the flat cable manufacturing method cuts the base substrate 310 continuously produced through a roll-to-roll process at predetermined intervals.
  • the flat cable manufacturing method forms the flat cable 350 by forming terminals 352 connected to both ends of the metal pattern 320. Through this, the flat cable manufacturing method produces a flat cable 350 having a length of approximately 50cm or more.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

Provided is a method for manufacturing a flat cable having a length of approximately 50 cm or longer by forming, by a roll-to-roll process, metal patterns on a base substrate on which a masking substrate of which a metal pattern region is opened is laminated. The provided flat cable manufacturing method comprises the steps of: preparing the roll-type base substrate; preparing the roll-type masking substrate of which a metal pattern formation region is opened; laminating the base substrate and the masking substrate; forming a seed layer on the base substrate having the masking substrate laminated thereon; forming a plating layer on the seed layer; and removing the masking substrate from the base substrate.

Description

평판 케이블 제조 방법Flat cable manufacturing method

본 발명은 평판 케이블 제조 방법에 관한 것으로, 더욱 상세하게는 가전제품 내에 실장된 회로기판에 연결되어 전력을 전송하는 평판 케이블 제조 방법(FLAT CABLE MANUFACTURING METHOD)에 관한 것이다.The present invention relates to a flat cable manufacturing method, and more particularly, to a flat cable manufacturing method (FAT CABLE MANUFACTURING METHOD) connected to a circuit board mounted in a home appliance for transmitting power.

텔레비전 등과 같은 가전제품에는 다수의 회로기판(예를 들면, 파워 보드, 컨트롤러 보드 등)이 실장된다.A plurality of circuit boards (for example, power boards, controller boards, etc.) are mounted in home appliances such as televisions.

회로기판은 전력 공급 또는 신호 전송을 위해서 다양한 형태의 케이블로 연결된다. 즉, 회로기판은 전력 공급 또는 신호 전송시 요구되는 전압에 따라 연성인쇄회로기판(FPC; Flexible Printed Circuit) 케이블, 연성 평판 케이블(FFC; Flexible Flat Cable), 와이어(Wire) 등의 케이블이 사용된다. 이때, 연성인쇄회로기판 케이블은 주로 저전압을 요구하는 회로기판에 사용된다. 연성 평판 케이블은 중전압을 요구하는 회로기판에 사용된다. 와이어는 고전압을 요구하는 회로기판에 사용된다.Circuit boards are connected by various types of cables for power supply or signal transmission. That is, the circuit board is a cable such as a flexible printed circuit board (FPC), a flexible flat cable (FFC), a wire (Wire), etc. according to the voltage required for power supply or signal transmission . In this case, the flexible printed circuit board cable is mainly used for a circuit board requiring a low voltage. Flexible flat cable is used for circuit boards requiring medium voltage. Wire is used for circuit boards that require high voltage.

최근 텔레비전은 60인치 이상의 대형화 추세에 있어, 회로기판들 간의 간섭을 최소화하기 위해 텔레비전에 내장되는 회로기판들 간의 이격 간격(대략 50㎝ 이상)이 증가하고 있다.In recent years, televisions have been enlarged to 60 inches or more, and the spacing between circuit boards embedded in televisions (about 50 cm or more) is increasing to minimize interference between circuit boards.

하지만, 중전압 회로기판에 주로 사용되는 연성 평판 케이블은 대략 3㎝ 정도의 폭을 갖고, 최대 길이가 대략 30㎝ 정도이기 때문에 대형 텔레비전에 내장된 회로기판들을 연결하기 어려운 문제점이 있다.However, a flexible flat cable mainly used for medium voltage circuit boards has a width of about 3 cm and a maximum length of about 30 cm, which makes it difficult to connect circuit boards embedded in large televisions.

본 발명은 상기한 종래의 문제점을 해결하기 위해 제안된 것으로, 롤투롤 공정으로 금속 패턴 영역이 오픈된 마스킹 기재가 합지된 베이스 기재에 금속 패턴을 형성하여 대략 50㎝ 이상의 길이를 갖는 평판 케이블 제조 방법을 제공하는 것을 목적으로 한다.The present invention has been proposed to solve the above-mentioned conventional problems, and a method of manufacturing a flat cable having a length of approximately 50 cm by forming a metal pattern on a base substrate on which a masking substrate having a metal pattern region is opened by a roll-to-roll process is laminated. The purpose is to provide.

또한, 본 발명은 롤투롤 공정으로 금속 패턴이 형성된 평판 케이블을 연속 제조하여 대략 50㎝ 이상의 길이를 갖는 평판 케이블 제조 방법을 제공하는 것을 다른 목적으로 한다.Another object of the present invention is to provide a flat cable manufacturing method having a length of approximately 50 cm or more by continuously manufacturing a flat cable having a metal pattern formed by a roll-to-roll process.

상기한 목적을 달성하기 위하여 본 발명의 실시예에 따른 평판 케이블 제조 방법은 롤 형태의 베이스 기재를 준비하는 단계, 금속 패턴 형성 영역이 오픈된 롤 형태의 마스킹 기재를 준비하는 단계, 베이스 기재 및 마스킹 기재를 합지하는 단계, 마스킹 기재가 합지된 베이스 기재에 시드층을 형성하는 단계, 시드층에 도금층을 형성하는 단계 및 베이스 기재에서 마스킹 기재를 제거하는 단계를 포함한다.In order to achieve the above object, a flat cable manufacturing method according to an embodiment of the present invention comprises the steps of preparing a base substrate in the form of a roll, preparing a masking substrate in the form of a roll open the metal pattern formation region, the base substrate and masking Laminating the substrate, forming a seed layer on the base substrate on which the masking substrate is laminated, forming a plating layer on the seed layer, and removing the masking substrate from the base substrate.

상기한 목적을 달성하기 위하여 본 발명의 실시예에 따른 평판 케이블 제조 방법은 적어도 일면에 금속층이 형성된 베이스 기재를 준비하는 단계 및 롤투롤 공정을 통해 금속층의 일부를 제거하여 베이스 기재에 금속 패턴을 형성하는 단계를 포함할 수 있다.In order to achieve the above object, a method for manufacturing a flat cable according to an embodiment of the present invention includes preparing a base substrate having a metal layer formed on at least one surface thereof, and removing a part of the metal layer through a roll-to-roll process to form a metal pattern on the base substrate. It may include the step.

본 발명에 의하면, 평판 케이블 제조 방법은 롤투롤 공정으로 금속 패턴 영역이 오픈된 마스킹 기재가 합지된 베이스 기재에 금속 패턴을 형성함으로써, 대략 50㎝ 이상의 길이를 갖는 평판 케이블을 제조할 수 있는 효과가 있다.According to the present invention, the method of manufacturing a flat cable has the effect of forming a flat cable having a length of approximately 50 cm or more by forming a metal pattern on a base substrate on which a masking substrate having an open metal pattern region is laminated in a roll-to-roll process. have.

또한, 평판 케이블 제조 방법은 롤투롤 공정으로 금속 패턴 영역이 오픈된 마스킹 기재가 합지된 베이스 기재에 금속 패턴을 형성함으로써, 포토 레지스트(photo resist) 공정 및 식각(etching) 공정 없이 평판 케이블을 제조할 수 있고, 제조 공정을 단순화하여 제품 단가를 최소화할 수 있는 효과가 있다.In addition, the flat cable manufacturing method is a roll-to-roll process to form a metal pattern on the base substrate on which the masking substrate with the metal pattern region is opened, thereby manufacturing a flat cable without a photo resist process and etching process. And it is possible to minimize the product cost by simplifying the manufacturing process.

또한, 평판 케이블 제조 방법은 롤투롤 공정으로 금속 패턴이 형성된 평판 케이블을 연속 제조함으로써, 대략 50㎝ 이상의 길이를 갖는 평판 케이블을 제조할 수 있는 효과가 있다.In addition, the flat cable manufacturing method has an effect of producing a flat cable having a length of approximately 50 cm or more by continuously manufacturing a flat cable having a metal pattern formed in a roll-to-roll process.

즉, 평판 케이블 제조 방법은 금속 패턴 형성시 롤투롤 공정으로 베이스 기재를 이송하면서 포토레지스층 형성, 레이저 노광, 현상, 에칭 및 박리 공정을 통해 베이스 기재의 금속층 일부를 제거하여 금속 패턴을 형성함으로써, 대략 50㎝ 이상의 길이를 갖는 평판 케이블을 제조할 수 있는 효과가 있다.That is, the flat cable manufacturing method by removing a portion of the metal layer of the base substrate to form a metal pattern through the photoresist layer forming, laser exposure, development, etching and peeling process while transferring the base substrate in a roll-to-roll process when forming the metal pattern, There is an effect that a flat cable having a length of about 50 cm or more can be produced.

한편, 평판 케이블 제조 방법은 금속 패턴 형성시 롤투롤 공정으로 베이스 기재를 이송하면서 마스킹층 형성, 에칭 및 박리 공정을 통해 베이스 기재의 금속층 일부를 제거하여 금속 패턴을 형성함으로써, 대략 50㎝ 이상의 길이를 갖는 평판 케이블을 제조할 수 있는 효과가 있다.Meanwhile, the flat cable manufacturing method removes a portion of the metal layer of the base substrate by forming a metal pattern through a masking layer forming, etching, and peeling process while transferring the base substrate by a roll-to-roll process when forming the metal pattern, thereby forming a length of about 50 cm or more. There exists an effect which can manufacture the flat cable which has.

도 1 및 도 2는 본 발명의 제1 실시 예에 따른 평판 케이블 제조 방법을 설명하기 위한 도면.1 and 2 are views for explaining a flat cable manufacturing method according to a first embodiment of the present invention.

도 3 및 도 4는 도 1의 합지 단계를 설명하기 위한 도면.3 and 4 are views for explaining the lamination step of FIG.

도 5는 본 발명의 제1 실시 예에 따른 평판 케이블 제조 방법을 설명하기 위한 도면.5 is a view for explaining a flat cable manufacturing method according to a first embodiment of the present invention.

도 6 및 도 7은 본 발명의 제2 실시 예에 따른 평판 케이블 제조 방법을 설명하기 위한 도면.6 and 7 are views for explaining a flat cable manufacturing method according to a second embodiment of the present invention.

도 8 및 도 9는 도 6의 금속 패턴 형성 단계를 설명하기 위한 도면.8 and 9 are views for explaining the metal pattern forming step of FIG.

도 10은 본 발명의 제2 실시 예에 따른 평판 케이블 제조 방법을 설명하기 위한 도면.10 is a view for explaining a flat cable manufacturing method according to a second embodiment of the present invention.

도 11 및 도 12는 본 발명의 제3 실시 예에 따른 평판 케이블 제조 방법을 설명하기 위한 도면.11 and 12 are views for explaining a flat cable manufacturing method according to a third embodiment of the present invention.

도 13 및 도 14는 도 11의 금속 패턴 형성 단계를 설명하기 위한 도면.13 and 14 are views for explaining the metal pattern forming step of FIG.

도 15는 본 발명의 제3 실시 예에 따른 평판 케이블 제조 방법을 설명하기 위한 도면.15 is a view for explaining a flat cable manufacturing method according to a third embodiment of the present invention.

이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 첨부 도면을 참조하여 설명하기로 한다. 우선 각 도면의 구성요소들에 참조부호를 부가함에 있어서, 동일한 구성요소들에 대해서는 비록 다른 도면상에 표시되더라도 가능한 한 동일한 부호를 가지도록 하고 있음에 유의해야 한다. 또한, 본 발명을 설명함에 있어, 관련된 공지 구성 또는 기능에 대한 구체적인 설명이 본 발명의 요지를 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명은 생략한다.Hereinafter, the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. . First of all, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are used as much as possible even if displayed on different drawings. In addition, in describing the present invention, when it is determined that the detailed description of the related well-known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

도 1 및 도 2를 참조하면, 본 발명의 제1 실시 예에 따른 평판 케이블 제조 방법은 베이스 기재(110)를 준비하는 단계(S110), 마스킹 기재(120)를 준비하는 단계(S120), 베이스 기재(110)에 마스킹 기재(120)를 합지하는 단계(S130), 베이스 기재(110)에 시드층(130)을 형성하는 단계(S140), 시드층(130)에 도금층(140)을 형성하는 단계(S150) 및 베이스 기재(110)로부터 마스킹 기재(120)를 제거하는 단계(S160)를 포함한다. 이때, 평판 케이블 제조 방법은 연속 롤 투 롤(Roll To Roll) 공정을 통해 평판 케이블을 제조한다. 여기서, 도 2는 평판 케이블 제조 방법을 용이하게 설명하기 위해 평판 케이블의 단변측 단면을 기준으로 설명한다.1 and 2, a method of manufacturing a flat cable according to a first embodiment of the present invention includes preparing a base substrate 110 (S110), preparing a masking substrate 120 (S120), and a base. Stacking the masking substrate 120 on the substrate 110 (S130), forming the seed layer 130 on the base substrate 110 (S140), and forming the plating layer 140 on the seed layer 130. Step S150 and removing the masking substrate 120 from the base substrate 110 (S160). At this time, the flat cable manufacturing method to manufacture a flat cable through a continuous roll to roll (Roll To Roll) process. Here, FIG. 2 is demonstrated with reference to the short side side cross section of a flat cable in order to demonstrate the flat cable manufacturing method easily.

베이스 기재(110)를 준비하는 단계(S110)는 평판 케이블의 베이스가 되는 필름 형태의 베이스 기재(110)를 준비한다. 이때, 베이스 기재(110)는 폴리이미드(PI; Polyimide), 폴리에틸렌프탈레이트(PET; Polyethylene phthalate), 열가소성 폴리우레탄(TPU; Thermoplastic Poly Urethane) 등과 같이 연성 또는 탄성을 갖는 재질로 형성될 수 있다.Preparing the base substrate 110 (S110) prepares the base substrate 110 in the form of a film to be the base of the flat cable. In this case, the base substrate 110 may be formed of a flexible or elastic material such as polyimide (PI), polyethylene phthalate (PET), and thermoplastic polyurethane (TPU).

베이스 기재(110)를 준비하는 단계(S110)는 롤투롤 공정을 위해 베이스 기재(110)를 롤 형태로 준비한다. 즉, 베이스 기재(110)를 준비하는 단계(S110)는 롤에 베이스 기재(110)를 권취하여 롤 형태의 베이스 기재(110)를 준비한다.Preparing the base substrate 110 (S110) prepares the base substrate 110 in a roll form for a roll-to-roll process. That is, in the preparing of the base substrate 110 (S110), the base substrate 110 in a roll form is prepared by winding the base substrate 110 on a roll.

마스킹 기재(120)를 준비하는 단계(S120)는 금속 패턴이 형성될 영역이 오픈된 마스킹 기재(120)를 준비한다. 이때, 마스킹 기재(120)는 금형 타발, 레이저 가공, 휠 커팅(Wheel Cutting) 등의 공정을 통해 마스킹 필름(또는 테이프)에서 금속 패턴이 형성될 영역(이하, 금속 패턴 형성 영역(221))을 제거(오픈)하여 마스킹 기재(120)를 준비한다. 이때, 마스킹 필름(또는 테이프)은 종이, 실리콘 및 PET 중에 어느 하나인 것을 일례로 한다.In the preparing of the masking substrate 120 (S120), the masking substrate 120 having a region where the metal pattern is to be opened is prepared. In this case, the masking substrate 120 may form a region (hereinafter, the metal pattern forming region 221) on which the metal pattern is to be formed on the masking film (or tape) through a process such as mold punching, laser processing, and wheel cutting. The masking substrate 120 is prepared by removing (opening). In this case, the masking film (or tape) may be any one of paper, silicone, and PET.

마스킹 기재(120)를 준비하는 단계(S120)는 롤투롤 공정을 위해 마스킹 기재(120)를 롤 형태로 준비한다. 즉, 마스킹 기재(120)를 준비하는 단계(S120)는 롤에 마스킹 기재(120)를 권취하여 롤 형태의 마스킹 기재(120)를 준비한다.The preparing of the masking substrate 120 (S120) prepares the masking substrate 120 in a roll form for a roll-to-roll process. That is, in the preparing of the masking substrate 120 (S120), the masking substrate 120 is wound on a roll to prepare the masking substrate 120 in a roll shape.

마스킹 기재(120)를 준비하는 단계(S120)는 리본 형태로 형성된 복수의 마스킹 필름(또는 테이프)을 상호 이격되도록 롤에 권취하여 롤 형태의 마스킹 기재(120)를 준비할 수도 있다. 이때, 마스킹 기재(120) 간의 이격 간격은 금속 패턴의 폭에 대응되도록 하는 것이 바람직하다.In preparing the masking substrate 120 (S120), the masking substrate 120 may be prepared by winding a plurality of masking films (or tapes) formed in a ribbon shape so as to be spaced apart from each other. At this time, the spacing between the masking substrate 120 is preferably to correspond to the width of the metal pattern.

베이스 기재(110)에 마스킹 기재(120)를 합지하는 단계(S130)는 롤투롤 공정을 통해 베이스 기재(110)의 적어도 일면에 마스킹 기재(120)를 합지한다. In step S130 of laminating the masking substrate 120 to the base substrate 110, the masking substrate 120 is laminated to at least one surface of the base substrate 110 through a roll-to-roll process.

이때, 도 3 및 도 4를 참조하면, 베이스 기재(110)에 마스킹 기재(120)를 합지하는 단계(S130)는 마스킹 기재(120)에 접착제(150)를 도포 단계(S132) 및 합지하는 단계(S134)를 포함한다.At this time, referring to Figures 3 and 4, the step (S130) of laminating the masking substrate 120 to the base substrate 110 is the step of applying the adhesive 150 to the masking substrate 120 (S132) and laminating (S134).

마스킹 기재(120)에 접착제(150)를 도포 단계(S132)는 마스킹 기재(120)의 일면에 접착제(150)를 도포한다. 즉, 마스킹 기재(120)에 접착제(150)를 도포 단계(S132)는 롤 형태의 마스킹 기재(120)를 인쇄용 롤로 공급하고, 인쇄용 롤에서 마스킹 기재(120)의 일면에 접착제(150)를 도포한다. 이때, 마스킹 기재(120)에 접착제(150)를 도포 단계(S132)는 베이스 기재(110)와 접합되는 마스킹 기재(120)의 일면에 접착제(150)를 도포한다.Applying the adhesive 150 to the masking substrate 120 (S132) to apply the adhesive 150 to one surface of the masking substrate 120. That is, in step S132, the adhesive 150 is applied to the masking substrate 120, the masking substrate 120 in a roll form is supplied to the printing roll, and the adhesive 150 is applied to one surface of the masking substrate 120 in the printing roll. do. In this case, the adhesive 150 is applied to the masking substrate 120 (S132) to apply the adhesive 150 to one surface of the masking substrate 120 to be bonded to the base substrate 110.

마스킹 기재(120)에 접착제(150)를 도포 단계(S132)는 후술할 마스킹 기재(120)를 제거하는 단계(S160)에서 마스킹 기재(120)의 제거를 용이하게 하기 위해 낮은 접착력을 갖는 접착제(150)를 마스킹 기재(120)에 도포한다.Applying the adhesive 150 to the masking substrate 120 (S132) in step (S160) of removing the masking substrate 120 to be described later to facilitate the removal of the masking substrate 120, the adhesive having a low adhesive force ( 150 is applied to the masking substrate 120.

마스킹 기재(120)에 접착제(150)를 도포 단계(S132)는 마스킹 기재(120)의 일면에 접착 시트를 접착할 수도 있다. 즉, 마스킹 기재(120)에 접착제(150)를 도포 단계(S132)는 롤 형태의 마스킹 기재(120)를 인쇄용 롤로 공급하고, 인쇄용 롤에서 롤 형태의 접착 시트를 마스킹 기재(120)의 일면에 접착한다. 이때, 마스킹 기재(120)에 접착제(150)를 도포 단계(S132)는 베이스 기재(110)와 접합되는 마스킹 기재(120)의 일면에 접착 시트를 접착한다.In the step of applying the adhesive 150 to the masking substrate 120 (S132), the adhesive sheet may be adhered to one surface of the masking substrate 120. That is, in step S132, the adhesive 150 is applied to the masking substrate 120, and the rolled masking substrate 120 is supplied to the printing roll, and the adhesive sheet in the roll form is printed on one surface of the masking substrate 120. Glue. In this case, in the step of applying the adhesive 150 to the masking substrate 120 (S132), the adhesive sheet is adhered to one surface of the masking substrate 120 to be bonded to the base substrate 110.

합지하는 단계(S134)는 마스킹 기재(120)를 베이스 기재(110)의 적어도 일면에 합지한다. 즉, 합지하는 단계(S134)는 접착제(150)가 도포(또는 접착 시트가 접착)된 마스킹 기재(120) 및 베이스 기재(110)를 합지 롤로 공급하여 베이스 기재(110)의 적어도 일면에 마스킹 기재(120)를 합지한다. 이때, 합지하는 단계(S134)는 합지 롤을 통해 압력을 가하거나, 압력 및 열을 가해 베이스 기재(110)에 마스킹 기재(120)를 합지할 수 있다.In the step of laminating (S134), the masking substrate 120 is laminated on at least one surface of the base substrate 110. That is, in the step of laminating (S134), the masking substrate 120 and the base substrate 110 to which the adhesive 150 is applied (or the adhesive sheet is attached) are supplied to the lamination rolls, and the masking substrate is provided on at least one surface of the base substrate 110. Laminate 120. At this time, the step of laminating (S134) may apply a pressure through the lamination roll, or may apply the pressure and heat to the masking substrate 120 to the base substrate 110.

시드층(130)을 형성하는 단계(S140)는 물리적 증착 공정을 통해 베이스 기재(110)에 시드층(130)을 형성한다. 여기서, 물리적 증착 공정은 진공증착, 열증착(Evaporation), 이빔(ebeam)증착, 레이저(laser) 증착, 스퍼터링(Sputtering), 아크이온플레이팅(Arc Ion Plating) 중 어느 하나인 것을 일례로 한다.In the forming of the seed layer 130 (S140), the seed layer 130 is formed on the base substrate 110 through a physical deposition process. Here, the physical vapor deposition process may be any one of vacuum deposition, evaporation, ebeam deposition, laser deposition, sputtering, arc ion plating.

시드층(130)을 형성하는 단계(S140)는 베이스 기재(110)의 전체 영역 중 마스킹 기재(120)의 오픈 영역에 의해 노출된 영역(즉, 금속 패턴 형성 영역(221))에만 시드층(130)을 형성한다. 시드층(130)을 형성하는 단계(S140)는 니켈구리(NiCu) 또는 구리(Cu)를 포함하는 금속인 시드층(130)을 형성한다. 이때, 시드층(130)은 니켈구리로 형성된 경우 대략 15㎚ 정도의 두께로 형성되고, 구리로 형성된 경우 대략 20㎚~100㎚ 정도의 두께로 형성될 수 있다.In the forming of the seed layer 130 (S140), the seed layer may be formed only in a region exposed by the open region of the masking substrate 120 (that is, the metal pattern forming region 221) of the entire region of the base substrate 110. 130). In the forming of the seed layer 130 (S140), the seed layer 130, which is a metal including nickel copper (NiCu) or copper (Cu), is formed. In this case, the seed layer 130 may be formed to a thickness of about 15nm when formed of nickel copper, and may be formed to a thickness of about 20nm to 100nm when formed of copper.

도금층(140)을 형성하는 단계(S150)는 물리적 증착 공정을 통해 시드층(130)에 도금층(140)을 형성한다. 여기서, 물리적 증착 공정은 진공증착, 열증착(Evaporation), 이빔(ebeam)증착, 레이저(laser) 증착, 스퍼터링(Sputtering), 아크이온플레이팅(Arc Ion Plating) 중 어느 하나인 것을 일례로 한다.In the forming of the plating layer 140 (S150), the plating layer 140 is formed on the seed layer 130 through a physical deposition process. Here, the physical vapor deposition process may be any one of vacuum deposition, evaporation, ebeam deposition, laser deposition, sputtering, arc ion plating.

도금층(140)을 형성하는 단계(S150)는 마스킹 기재(120)의 오픈 영역에 의해 노출된 영역(즉, 시드층(130)의 상면)에만 도금층(140)을 형성한다. 도금층(140)을 형성하는 단계(S150)는 구리(Cu), 은(Ag) 중에 적어도 하나를 포함하는 금속인 도금층(140)을 형성한다. 이때, 도금층(140)은 대략 15㎛ 정도의 두께로 형성될 수 있다.In the forming of the plating layer 140 (S150), the plating layer 140 is formed only in a region exposed by the open region of the masking substrate 120 (that is, the top surface of the seed layer 130). Forming the plating layer 140 (S150) forms a plating layer 140 which is a metal including at least one of copper (Cu) and silver (Ag). At this time, the plating layer 140 may be formed to a thickness of about 15㎛.

마스킹 기재(120)를 제거하는 단계(S160)는 베이스 기재(110)로부터 마스킹 기재(120)를 제거한다.Removing the masking substrate 120 (S160) removes the masking substrate 120 from the base substrate 110.

이후, 도 5를 참조하면, 평판 케이블 제조 방법은 시드층(130) 및 도금층(140)이 형성된 베이스 기재(110)에 코팅층(162)을 형성한다. 베이스 기재(110)를 설정 간격으로 절단한 후 베이스 기재(110)에 형성된 금속 패턴(164; 즉, 시드층(130) 및 도금층(140))의 양단에 각각 연결된 단자(166)들을 형성한다. 이를 통해, 평판 케이블 제조 방법은 대략 50㎝ 이상의 길이를 갖는 평판 케이블(160)을 제조한다.Subsequently, referring to FIG. 5, in the method of manufacturing a flat cable, a coating layer 162 is formed on the base substrate 110 on which the seed layer 130 and the plating layer 140 are formed. After cutting the base substrate 110 at predetermined intervals, terminals 166 connected to both ends of the metal pattern 164 (that is, the seed layer 130 and the plating layer 140) formed on the base substrate 110 are formed. Through this, the flat cable manufacturing method produces a flat cable 160 having a length of approximately 50cm or more.

한편, 평판 케이블 제조 방법은 베이스 기재(110)로부터 마스킹 기재(120)를 제거(S160)한 후에 시드층(130)에 도금층(140)을 형성(S150)할 수도 있다. 이때, 평판 케이블 제조 방법은 마스킹 기재(120) 제거 후에 시드층(130)에 도금층(140)을 형성함으로써 시드층(130)의 상면 및 둘레에 도금층(140)을 형성한다.Meanwhile, in the method of manufacturing a flat cable, the plating layer 140 may be formed on the seed layer 130 after the masking substrate 120 is removed from the base substrate 110 (S160). In this case, in the method of manufacturing a flat cable, the plating layer 140 is formed on the seed layer 130 by forming the plating layer 140 on the seed layer 130 after removing the masking substrate 120.

도 6 및 도 7을 참조하면, 본 발명의 제2 실시 예에 따른 평판 케이블 제조 방법은 베이스 기재(210)를 준비하는 단계(S210). 베이스 기재(210)에 금속 패턴(220)을 형성하는 단계(S220) 및 보호 코팅층(230)을 형성하는 단계(S230)를 포함한다. 이때, 평판 케이블 제조 방법은 S200 단계 및 S300 단계를 롤투롤 공정을 통해 연속적으로 수행한다.6 and 7, a method of manufacturing a flat cable according to a second embodiment of the present invention includes preparing a base substrate 210 (S210). Forming a metal pattern 220 on the base substrate 210 (S220) and forming a protective coating layer 230 (S230). At this time, the flat cable manufacturing method is performed continuously through the roll-to-roll process step S200 and S300.

베이스 기재(210)를 준비하는 단계(S210)는 금속층(212)이 형성된 기재 필름(214)을 베이스 기재(210)로 준비한다. 이때, 베이스 기재(210)를 준비하는 단계(S210)는 기재 필름(214)의 적어도 일면에 금속층(212)이 형성된 기재를 권취하여 롤 형태의 베이스 기재(210)를 준비한다.In the preparing of the base substrate 210 (S210), the base film 214 on which the metal layer 212 is formed is prepared as the base substrate 210. In this case, in preparing the base substrate 210 (S210), the base substrate 210 having a roll shape may be prepared by winding the substrate on which the metal layer 212 is formed on at least one surface of the substrate film 214.

여기서, 금속층(212)은 구리(Cu) 및 은(Ag) 중에 어느 하나이고, 기재 필름(214)은 폴리이미드(PI; Polyimide), 폴리에틸렌프탈레이트(PET; Polyethylene phthalate) 및 열가소성 폴리우레탄(TPU; Thermoplastic Poly Urethane) 중 어느 하나일 수 있다.The metal layer 212 may be any one of copper (Cu) and silver (Ag), and the base film 214 may include polyimide (PI), polyethylene phthalate (PET), and thermoplastic polyurethane (TPU); Thermoplastic Poly Urethane).

일례로, 베이스 기재(210)를 준비하는 단계(S210)는 구리(Cu)가 표면에 적층된 연성동박적층판(FCCL; Flexible Copper Clad Laminate)을 권취하여 롤 형태의 베이스 기재(210)를 준비할 수 있다.For example, in the preparing of the base substrate 210 (S210), a flexible copper clad laminate (FCCL) in which copper (Cu) is laminated on the surface may be wound to prepare a base substrate 210 in a roll form. Can be.

금속 패턴(220)을 형성하는 단계(S220)는 베이스 기재(210)의 금속층(212) 중 일부를 제거하여 금속 패턴(220)을 형성한다. 이때, 금속 패턴(220)을 형성하는 단계(S220)는 롤투롤 공정을 통해 연속으로 공급되는 베이스 기재(210)의 적어도 일면에 금속 패턴(220)을 형성한다.In the forming of the metal pattern 220 (S220), a part of the metal layer 212 of the base substrate 210 is removed to form the metal pattern 220. In this case, in the forming of the metal pattern 220 (S220), the metal pattern 220 is formed on at least one surface of the base substrate 210 which is continuously supplied through a roll-to-roll process.

이를 위해, 도 8 및 도 9를 참조하면, 금속 패턴(220)을 형성하는 단계(S220)는 베이스 기재(210)에 포토레지스트층(240)을 형성하는 단계(S221), 노광하는 단계(S223), 현상하는 단계(S225), 식각하는 단계(S227) 및 제거하는 단계(S229)를 포함한다.To this end, referring to FIGS. 8 and 9, in the forming of the metal pattern 220 (S220), forming the photoresist layer 240 on the base substrate 210 (S221) and exposing (S223). ), Developing (S225), etching (S227), and removing (S229).

포토레지스트층(240)을 형성하는 단계(S221)는 베이스 기재(210)의 적어도 일면에 포토레지스트층(240)을 형성한다. 이때, 포토레지스트층(240)을 형성하는 단계(S221)는 감광성 드라이 필름을 라미네이팅하거나, 포토레지스트액을 도포하여 베이스 기재(210)에 포토레지스트층(240)을 형성한다.In the step S221 of forming the photoresist layer 240, the photoresist layer 240 is formed on at least one surface of the base substrate 210. In this case, in the forming of the photoresist layer 240 (S221), the photoresist layer 240 may be formed on the base substrate 210 by laminating the photosensitive dry film or applying a photoresist liquid.

여기서, 포토레지스트층(240)을 형성하는 단계(S221)는 스핀코팅, 라미네이팅, 콤마롤코팅, 그라비아 코팅, 닥터블레이드법, 스프레이법 및 전기방사 중 어느 하나로 포토레지스트층(240)을 형성할 수 있다. Here, the step (S221) of forming the photoresist layer 240 may form the photoresist layer 240 by any one of spin coating, laminating, comma roll coating, gravure coating, doctor blade method, spray method and electrospinning. have.

노광하는 단계(S223)는 포토레지스트층(240) 중에서 금속 패턴(220)이 형성될 영역을 노광하여 경화시킨다. 이때, 노광하는 단계(S223)는 금속 패턴(220)들 간의 미세 간격 형성을 위해 레이저 노광(LDI) 공정을 통해 포토레지스트층(240)을 노광한다.In the exposing step S223, a region of the photoresist layer 240 on which the metal pattern 220 is to be formed is exposed and cured. In this case, the exposing step S223 exposes the photoresist layer 240 through a laser exposure (LDI) process to form fine gaps between the metal patterns 220.

현상하는 단계(S225)는 포토레지스트층(240) 중에서 금속 패턴(220)이 형성되지 않는 영역을 현상한다. 즉 현상하는 단계(S225)는 노광하는 단계(S223)에서 경화되지 않은 포토레지스트층(240)을 현상하여 제거한다. 이때, 현상하는 단계(S225)는 경화되지 않은 포토레지스트층(240)을 현상액으로 융해시켜 제거한다.In the developing step S225, a region in which the metal pattern 220 is not formed in the photoresist layer 240 is developed. That is, the developing step S225 develops and removes the uncured photoresist layer 240 in the exposing step S223. At this time, the developing step (S225) is removed by melting the uncured photoresist layer 240 with a developer.

식각하는 단계(S227)는 경화된 포토레지스트층(240)을 장벽으로 베이스 기재(210)의 금속층(212)을 식각(Etching)하여 금속 패턴(220)을 형성한다.In the etching step S227, the metal layer 212 of the base substrate 210 is etched using the cured photoresist layer 240 to form a metal pattern 220.

제거하는 단계(S229)는 금속 패턴(220; 즉, 금속층(212)) 상에 남아 있는 포토레지스트층(240)을 제거한다. 이때, 포토레지스트층(240)을 제거하는 단계(S229)는 스트립 공정을 통해 금속 패턴(220) 위의 포토레지스트층(240)을 제거한다.In operation S229, the photoresist layer 240 remaining on the metal pattern 220 (that is, the metal layer 212) is removed. In this case, in the step of removing the photoresist layer 240 (S229), the photoresist layer 240 on the metal pattern 220 is removed through a stripping process.

보호 코팅층(230)을 형성하는 단계(S230)는 금속 패턴(220)이 형성된 베이스 기재(210)에 보호 코팅층(230)을 형성한다. 이때, 보호 코팅층(230)을 형성하는 단계(S230)는 롤투롤 공정을 통해 금속 패턴(220)이 형성된 베이스 기재(210)의 표면(즉, 상면 및 하면 중 적어도 일면)에 코팅액을 베이스 기재(210)에 도포한 후 경화시키거나, 코팅 시트를 베이스 기재(210)에 합지하여 금속 패턴(220)을 보호하는 보호 코팅층(230)을 형성한다. 여기서, 보호 코팅층(230)은 PI 코팅층 또는 PAI 코팅층인 것을 일 예로 한다.In the forming of the protective coating layer 230 (S230), the protective coating layer 230 is formed on the base substrate 210 on which the metal pattern 220 is formed. At this time, the forming of the protective coating layer 230 (S230) is a roll base roll coating the coating liquid on the surface (that is, at least one of the upper and lower surfaces) of the base substrate 210, the metal pattern 220 is formed through a base substrate ( After applying to the coating 210 to cure or to coat the coating sheet on the base substrate 210 to form a protective coating 230 to protect the metal pattern 220. Here, the protective coating layer 230 is an example of a PI coating layer or a PAI coating layer.

이후, 도 10을 참조하면, 평판 케이블 제조 방법은 롤투롤 공정을 통해 연속 생산된 베이스 기재(210)를 설정 간격으로 절단한다. 평판 케이블 제조 방법은 금속 패턴(220)의 양단에 각각 연결된 단자(262)들을 형성하여 평판 케이블(260)을 제조한다. 이를 통해, 평판 케이블 제조 방법은 대략 50㎝ 이상의 길이를 갖는 평판 케이블(260)을 제조한다.Thereafter, referring to FIG. 10, the flat cable manufacturing method cuts the base substrate 210 continuously produced through a roll-to-roll process at predetermined intervals. In the flat cable manufacturing method, terminals 262 connected to both ends of the metal pattern 220 are formed to manufacture the flat cable 260. Through this, the flat cable manufacturing method produces a flat cable 260 having a length of approximately 50cm or more.

도 11 및 도 12를 참조하면, 본 발명의 실시예에 따른 평판 케이블 제조 방법은 베이스 기재(310)를 준비하는 단계(S310), 베이스 기재(310)의 적어도 일면에 금속 패턴(320)을 형성하는 단계(S320) 및 베이스 기재(310)에 보호 코팅층(330)을 형성하는 단계(S330)를 포함한다. 이때, 평판 케이블 제조 방법은 S200 단계 및 S300 단계를 롤투롤 공정을 통해 연속적으로 수행한다.11 and 12, in the method of manufacturing a flat cable according to an embodiment of the present invention, preparing a base substrate 310 (S310) and forming a metal pattern 320 on at least one surface of the base substrate 310. And forming a protective coating layer 330 on the base substrate 310 (S330). At this time, the flat cable manufacturing method is performed continuously through the roll-to-roll process step S200 and S300.

베이스 기재(310)를 준비하는 단계(S310)는 금속층(312)이 형성된 기재 필름(314)을 베이스 기재(310)로 준비한다. 이때, 베이스 기재(310)를 준비하는 단계(S310)는 기재 필름(314)의 적어도 일면에 금속층(312)이 형성된 기재를 권취하여 롤 형태의 베이스 기재(310)를 준비한다.In the preparing of the base substrate 310 (S310), the base film 314 on which the metal layer 312 is formed is prepared as the base substrate 310. In this case, in the preparing of the base substrate 310 (S310), the base substrate 310 having a roll shape is prepared by winding the substrate on which the metal layer 312 is formed on at least one surface of the substrate film 314.

여기서, 금속층(312)은 구리(Cu) 및 은(Ag) 중에 어느 하나이고, 기재 필름(314)은 폴리이미드(PI; Polyimide), 폴리에틸렌프탈레이트(PET; Polyethylene phthalate) 및 열가소성 폴리우레탄(TPU; Thermoplastic Poly Urethane) 중 어느 하나일 수 있다.Here, the metal layer 312 may be any one of copper (Cu) and silver (Ag), and the base film 314 may include polyimide (PI), polyethylene phthalate (PET), and thermoplastic polyurethane (TPU); Thermoplastic Poly Urethane).

일례로, 베이스 기재(310)를 준비하는 단계(S310)는 구리(Cu)가 표면에 적층된 연성동박적층판(FCCL; Flexible Copper Clad Laminate)을 권취하여 롤 형태의 베이스 기재(310)를 준비할 수 있다.For example, in the preparing of the base substrate 310 (S310), a flexible copper clad laminate (FCCL) in which copper (Cu) is laminated on the surface may be wound to prepare a roll-based base substrate 310. Can be.

금속 패턴(320)을 형성하는 단계(S320)는 베이스 기재(310)의 금속층(312) 중 일부를 제거하여 금속 패턴(320)을 형성한다. 이때, 금속 패턴(320)을 형성하는 단계(S320)는 롤투롤 공정을 통해 연속으로 공급되는 베이스 기재(310)의 적어도 일면에 금속 패턴(320)을 형성한다.In the forming of the metal pattern 320 (S320), a part of the metal layer 312 of the base substrate 310 is removed to form the metal pattern 320. In this case, in the forming of the metal pattern 320 (S320), the metal pattern 320 is formed on at least one surface of the base substrate 310 which is continuously supplied through a roll-to-roll process.

이를 위해, 도 13 및 도 14를 참조하면, 금속 패턴(320)을 형성하는 단계(S320)는 마스킹층(340)을 형성하는 단계(S322), 베이스 기재(310)를 식각하는 단계(S324), 마스킹층(340)을 제거하는 단계(S326)를 포함한다. To this end, referring to FIGS. 13 and 14, the forming of the metal pattern 320 (S320) may include forming the masking layer 340 (S322) and etching the base substrate 310 (S324). In operation S326, the masking layer 340 is removed.

마스킹층(340)을 형성하는 단계(S322)는 베이스 기재(310)의 적어도 일면에 마스킹층(340)을 형성한다. 즉, 마스킹층(340)을 형성하는 단계(S322)는 베이스 기재(310)의 상면 및 하면 중 금속층(312)이 형성된 적어도 일면에 금속 패턴(320)에 대응되는 형상의 마스킹층(340)을 형성한다.In the forming of the masking layer 340 (S322), the masking layer 340 is formed on at least one surface of the base substrate 310. That is, in operation S322, the masking layer 340 may be formed by forming a masking layer 340 having a shape corresponding to the metal pattern 320 on at least one surface of the upper and lower surfaces of the base substrate 310. Form.

마스킹층(340)을 형성하는 단계(S322)는 에칭 레지스트(Etching Resist)를 베이스 기재(310)의 적어도 일면에 도포(인쇄)하여 마스킹층(340)을 형성한다. 이때, 마스킹층(340)을 형성하는 단계(S322)는 롤 인쇄기를 이용하여 베이스 기재(310)의 적어도 일면에 에칭 레지스트를 도포(인쇄)하여 마스킹층(340)을 형성하는 것을 일례로 한다.In forming the masking layer 340 (S322), an etching resist is applied to at least one surface of the base substrate 310 to form the masking layer 340. In this case, the forming of the masking layer 340 (S322) is an example in which the masking layer 340 is formed by applying (printing) an etching resist to at least one surface of the base substrate 310 using a roll printer.

베이스 기재(310)를 식각하는 단계(S270)는 베이스 기재(310)의 금속층(312) 상부에 형성된 마스킹층(340)을 장벽으로 베이스 기재(310)의 금속층(312) 일부를 식각(Etching)하여 금속 패턴(320)을 형성한다.The etching of the base substrate 310 may be performed by etching part of the metal layer 312 of the base substrate 310 by using a masking layer 340 formed on the metal layer 312 of the base substrate 310 as a barrier. The metal pattern 320 is formed.

마스킹층(340)을 제거하는 단계(S326)는 금속 패턴(320; 즉, 금속층(312)) 상에 남아 있는 마스킹층(340)을 제거한다. 이때, 마스킹층(340)을 제거하는 단계(S326)는 스트립 공정을 통해 금속 패턴(320) 위에 남아있는 마스킹층(340)을 제거한다.Removing the masking layer 340 (S326) removes the masking layer 340 remaining on the metal pattern 320 (that is, the metal layer 312). In this case, in step S326 of removing the masking layer 340, the masking layer 340 remaining on the metal pattern 320 is removed through a stripping process.

보호 코팅층(330)을 형성하는 단계(S330)는 금속 패턴(320)이 형성된 베이스 기재(310)에 보호 코팅층(330)을 형성한다. 이때, 보호 코팅층(330)을 형성하는 단계(S330)는 롤투롤 공정을 통해 금속 패턴(320)이 형성된 베이스 기재(310)의 표면(즉, 상면 및 하면 중 적어도 일면)에 코팅액을 베이스 기재(310)에 도포한 후 경화시키거나, 코팅 시트를 베이스 기재(310)에 합지하여 금속 패턴(320)을 보호하는 보호 코팅층(330)을 형성한다. 여기서, 보호 코팅층(330)은 PI 코팅층 또는 PAI 코팅층인 것을 일 예로 한다.In the forming of the protective coating layer 330 (S330), the protective coating layer 330 is formed on the base substrate 310 on which the metal pattern 320 is formed. At this time, the forming of the protective coating layer 330 (S330) is a base substrate (the coating liquid on the surface (that is, at least one of the upper and lower surfaces) of the base substrate 310, the metal pattern 320 is formed through a roll-to-roll process After coating to 310 to cure, or to coat the coating sheet on the base substrate 310 to form a protective coating layer 330 to protect the metal pattern (320). Here, the protective coating layer 330 is an example of a PI coating layer or a PAI coating layer.

이후, 도 15를 참조하면, 평판 케이블 제조 방법은 롤투롤 공정을 통해 연속 생산된 베이스 기재(310)를 설정 간격으로 절단한다. 평판 케이블 제조 방법은 금속 패턴(320)의 양단에 각각 연결된 단자(352)들을 형성하여 평판 케이블(350)을 제조한다. 이를 통해, 평판 케이블 제조 방법은 대략 50㎝ 이상의 길이를 갖는 평판 케이블(350)을 제조한다.Subsequently, referring to FIG. 15, the flat cable manufacturing method cuts the base substrate 310 continuously produced through a roll-to-roll process at predetermined intervals. The flat cable manufacturing method forms the flat cable 350 by forming terminals 352 connected to both ends of the metal pattern 320. Through this, the flat cable manufacturing method produces a flat cable 350 having a length of approximately 50cm or more.

이상에서 본 발명에 따른 바람직한 실시예에 대해 설명하였으나, 다양한 형태로 변형이 가능하며, 본 기술분야에서 통상의 지식을 가진자라면 본 발명의 특허청구범위를 벗어남이 없이 다양한 변형예 및 수정예를 실시할 수 있을 것으로 이해된다.Although a preferred embodiment according to the present invention has been described above, it is possible to modify in various forms, and those skilled in the art to various modifications and modifications without departing from the claims of the present invention It is understood that it may be practiced.

Claims (19)

롤 형태의 베이스 기재를 준비하는 단계;Preparing a base substrate in roll form; 금속 패턴 형성 영역이 오픈된 롤 형태의 마스킹 기재를 준비하는 단계;Preparing a masking substrate having a roll shape in which a metal pattern formation region is opened; 상기 베이스 기재 및 마스킹 기재를 합지하는 단계;Laminating the base substrate and the masking substrate; 상기 마스킹 기재가 합지된 상기 베이스 기재에 시드층을 형성하는 단계;Forming a seed layer on the base substrate on which the masking substrate is laminated; 상기 시드층에 도금층을 형성하는 단계; 및Forming a plating layer on the seed layer; And 상기 베이스 기재에서 마스킹 기재를 제거하는 단계를 포함하는 평판 케이블 제조 방법.Removing the masking substrate from the base substrate. 제1항에 있어서,The method of claim 1, 상기 베이스 기재를 준비하는 단계는,Preparing the base substrate, 필름 형태의 베이스 기재를 권취하여 롤 형태의 베이스 기재를 준비하는 단계를 포함하고,Winding the base substrate in the form of a film to prepare a base substrate in the form of a roll, 상기 베이스 기재는 폴리이미드(PI), 폴리에틸렌프탈레이트(PET), 열가소성 폴리우레탄(TPU) 중에 적어도 하나인 평판 케이블 제조 방법.The base substrate is at least one of polyimide (PI), polyethylene phthalate (PET), thermoplastic polyurethane (TPU). 제1항에 있어서,The method of claim 1, 상기 마스킹 기재를 준비하는 단계는 마스킹 필름에서 금속 패턴 형성 영역을 제거하는 단계를 포함하고, Preparing the masking substrate includes removing the metal pattern formation region from the masking film, 상기 금속 패턴 형성 영역을 제거하는 단계는 금형 타발, 레이저 가공, 휠 커팅 중에 적어도 하나의 공정을 통해 상기 마스킹 필름에서 금속 패턴 형성 영역을 제거하는 평판 케이블 제조 방법.The removing of the metal pattern forming region may include removing the metal pattern forming region from the masking film through at least one process during mold punching, laser processing, and wheel cutting. 제3항에 있어서,The method of claim 3, 상기 마스킹 필름은 종이, 실리콘 및 폴리에틸렌프탈레이트(PET) 중 적어도 나인 평판 케이블 제조 방법.And said masking film is at least one of paper, silicone and polyethylene phthalate (PET). 제1항에 있어서,The method of claim 1, 상기 마스킹 기재를 준비하는 단계는 리본 형태로 형성된 복수의 마스킹 필름을 상호 이격되도록 권취하여 롤 형태의 마스킹 기재를 준비하는 단계를 포함하는 평판 케이블 제조 방법.The preparing of the masking substrate may include winding a plurality of masking films formed in a ribbon form to be spaced apart from each other to prepare a masking substrate in a roll form. 제1항에 있어서,The method of claim 1, 상기 베이스 기재 및 마스킹 기재를 합지하는 단계는,The step of laminating the base substrate and the masking substrate, 상기 마스킹 기재의 적어도 일면에 접착제를 도포하는 단계를 포함하는 평판 케이블 제조 방법.Flat panel cable manufacturing method comprising the step of applying an adhesive to at least one side of the masking substrate. 제1항에 있어서,The method of claim 1, 상기 시드층을 형성하는 단계에서는 상기 베이스 기재 중 상기 마스킹 기재의 금속 패턴 형성 영역을 통해 노출된 영역에 시드층을 형성하는 평판 케이블 제조 방법.The forming of the seed layer is a flat cable manufacturing method of forming a seed layer in the exposed portion of the base substrate through the metal pattern forming region of the masking substrate. 제1항에 있어서,The method of claim 1, 상기 시드층을 형성하는 단계는,Forming the seed layer, 진공증착, 열증착(Evaporation), 이빔(ebeam)증착, 레이저(laser) 증착, 스퍼터링(Sputtering), 아크이온플레이팅(Arc Ion Plating) 중 어느 하나의 물리적 증착 공정을 통해 상기 베이스 기재에 시드층을 형성하는 단계를 포함하는 평판 케이블 제조 방법.Seed layer on the base substrate through the physical vapor deposition process of any one of vacuum deposition, evaporation, ebeam deposition, laser deposition, sputtering, arc ion plating (Arc Ion Plating) Flat cable manufacturing method comprising the step of forming a. 제1항에 있어서,The method of claim 1, 상기 도금층을 형성하는 단계는,Forming the plating layer, 진공증착, 열증착(Evaporation), 이빔(ebeam)증착, 레이저(laser) 증착, 스퍼터링(Sputtering), 아크이온플레이팅(Arc Ion Plating) 중 어느 하나의 물리적 증착 공정을 통해 상기 시드층의 상면에 도금층을 형성하는 단계를 포함하는 평판 케이블 제조 방법.The top layer of the seed layer is formed by physical deposition of any one of vacuum deposition, evaporation, ebeam deposition, laser deposition, sputtering, and arc ion plating. Flat cable manufacturing method comprising the step of forming a plating layer. 적어도 일면에 금속층이 형성된 베이스 기재를 준비하는 단계; 및Preparing a base substrate having a metal layer formed on at least one surface; And 롤투롤 공정을 통해 상기 금속층의 일부를 제거하여 상기 베이스 기재에 금속 패턴을 형성하는 단계를 포함하는 평판 케이블 제조 방법.Removing a portion of the metal layer through a roll-to-roll process to form a metal pattern on the base substrate. 제10항에 있어서,The method of claim 10, 상기 베이스 기재를 준비하는 단계는,Preparing the base substrate, 기재 필름의 적어도 일면에 금속층이 형성된 베이스 기재를 권취하여 롤 형태의 베이스 기재를 준비하는 단계를 포함하고,Preparing a base substrate in roll form by winding a base substrate having a metal layer formed on at least one surface of the substrate film, 상기 기재 필름은 폴리이미드(PI), 폴리에틸렌프탈레이트(PET) 및 열가소성 폴리우레탄(TPU) 중 어느 하나인 평판 케이블 제조 방법.The base film is a flat cable manufacturing method of any one of polyimide (PI), polyethylene phthalate (PET) and thermoplastic polyurethane (TPU). 제10항에 있어서,The method of claim 10, 상기 금속층은 구리(Cu) 및 은(Ag) 중에 적어도 하나인 평판 케이블 제조 방법.And said metal layer is at least one of copper (Cu) and silver (Ag). 제10항에 있어서,The method of claim 10, 상기 베이스 기재를 준비하는 단계는,Preparing the base substrate, 연성동박적층판(FCCL)을 권취하여 롤 형태의 베이스 기재를 준비하는 단계를 포함하는 평판 케이블 제조 방법.A method of manufacturing a flat cable comprising winding a flexible copper clad laminate (FCCL) to prepare a base substrate in a roll form. 제10항에 있어서,The method of claim 10, 상기 베이스 기재의 일면 및 하면 중 상기 금속 패턴이 형성된 적어도 일면에 보호 코팅층을 형성하는 단계를 더 포함하는 평판 케이블 제조 방법.And forming a protective coating layer on at least one surface of the base substrate on which one side and the bottom surface of the base metal pattern are formed. 제10항에 있어서,The method of claim 10, 상기 금속 패턴을 형성하는 단계는,Forming the metal pattern, 상기 베이스 기재의 적어도 일면에 마스킹층을 형성하는 단계;Forming a masking layer on at least one surface of the base substrate; 상기 베이스 기재의 금속층 중 상기 마스킹층이 형성되지 않은 영역을 식각하는 단계; 및Etching a region in which the masking layer is not formed among the metal layers of the base substrate; And 상기 베이스 기재에 형성된 상기 마스킹층을 제거하는 단계를 포함하는 평판 케이블 제조 방법.Removing the masking layer formed on the base substrate. 제15항에 있어서,The method of claim 15, 상기 마스킹층을 형성하는 단계는,Forming the masking layer, 마스킹 부재를 상기 베이스 기재의 적어도 일면에 도포하여 마스킹층을 형성하는 단계를 포함하는 평판 케이블 제조 방법.And applying a masking member to at least one surface of the base substrate to form a masking layer. 제15항에 있어서,The method of claim 15, 상기 마스킹층을 형성하는 단계는,Forming the masking layer, 롤 인쇄기를 이용해 에칭 레지스트(Etching Resist)를 상기 베이스 기재의 적어도 일면에 인쇄하여 마스킹층을 형성하는 단계를 포함하는 평판 케이블 제조 방법.And printing an etching resist on at least one surface of the base substrate using a roll printer to form a masking layer. 제10항에 있어서,The method of claim 10, 상기 금속 패턴을 형성하는 단계는,Forming the metal pattern, 상기 베이스 기재의 적어도 일면에 포토레지스트층을 형성하는 단계;Forming a photoresist layer on at least one surface of the base substrate; 상기 포토레지스트층의 일부를 노광하는 단계;Exposing a portion of the photoresist layer; 상기 포토레지스트층의 나머지 일부를 현상하는 단계;Developing the remaining part of the photoresist layer; 상기 베이스 기재의 금속층을 식각하여 금속 패턴을 형성하는 단계; 및Etching the metal layer of the base substrate to form a metal pattern; And 상기 금속 패턴에 형성된 포토레지스트층을 제거하는 단계를 포함하는 평판 케이블 제조 방법.Removing the photoresist layer formed on the metal pattern. 제18항에 있어서,The method of claim 18, 상기 노광하는 단계는,The exposing step, 레이저 노광으로 상기 포토레지스트층의 일부를 노광하는 단계를 포함하는 평판 케이블 제조 방법.Exposing a portion of the photoresist layer by laser exposure.
PCT/KR2017/012625 2016-11-24 2017-11-08 Flat cable manufacturing method Ceased WO2018097518A1 (en)

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