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WO2018074562A1 - Resistive paste and resistor produced by firing same - Google Patents

Resistive paste and resistor produced by firing same Download PDF

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Publication number
WO2018074562A1
WO2018074562A1 PCT/JP2017/037905 JP2017037905W WO2018074562A1 WO 2018074562 A1 WO2018074562 A1 WO 2018074562A1 JP 2017037905 W JP2017037905 W JP 2017037905W WO 2018074562 A1 WO2018074562 A1 WO 2018074562A1
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Prior art keywords
resistor
lead
paste
mass
additive
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Ceased
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PCT/JP2017/037905
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French (fr)
Japanese (ja)
Inventor
富士雄 幕田
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Sumitomo Metal Mining Co Ltd
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Sumitomo Metal Mining Co Ltd
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Priority to CN201780064365.2A priority Critical patent/CN109844871B/en
Priority to KR1020197011628A priority patent/KR102384488B1/en
Publication of WO2018074562A1 publication Critical patent/WO2018074562A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506Precursor compositions therefor, e.g. pastes, inks, glass frits
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/40Glass
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00Compositions of unspecified macromolecular compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06573Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder
    • H01C17/06586Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder composed of organic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material

Definitions

  • the present invention relates to a resistor paste used as a resistor material such as a thick film chip resistor or a hybrid IC, and more particularly to a resistor paste not containing lead and a resistor produced by firing the paste.
  • a thick film method in which a film is formed using a resistance paste containing a film forming material and a thin film method in which a film forming material is formed by sputtering or the like are generally used.
  • the thick film method is to form a resistor by printing a resistor paste on a ceramic substrate and then firing it. This method is inexpensive and has high productivity required for film formation. It is widely used for manufacturing resistors included in electronic components such as chip resistors and hybrid ICs.
  • the resistive paste used in the above thick film system contains conductive particles and glass frit, and an organic vehicle for making them suitable for printing.
  • conductive particles ruthenium dioxide (RuO 2 ) or pyrochlore-type ruthenium-based oxides (Pb 2 Ru 2 O 7-X , Bi 2 Ru 2 O 7 ) are generally used.
  • the reason why the Ru-based oxide is used as the conductive particles is mainly because the resistance value changes gently with respect to the concentration of the conductive particles.
  • a large amount of lead such as lead borosilicate glass (PbO—SiO 2 —B 2 O 3 ) and lead aluminoborosilicate glass (PbO—SiO 2 —B 2 O 3 —Al 2 O 3 ) is used.
  • Including lead borosilicate glass is used. The reason why the lead borosilicate glass is used for the glass frit in this way is that it has good wettability with the Ru-based oxide, has a thermal expansion coefficient close to that of the substrate, and has a suitable viscosity during firing.
  • Patent Document 1 discloses a thick film resistor excellent in electrical characteristics by mixing a refined ruthenium oxide powder, a glass containing PbO, and niobium oxide (Nb 2 O 5 ) together with an inert vehicle. A technique for producing a resistive paste is disclosed.
  • Nb 2 O 5 when used as an additive, the characteristics can be improved with a small addition amount, but the resistance value is also greatly changed, so that there is a problem that it is difficult to adjust the resistance value.
  • lead-free electronic components have been promoted in consideration of environmental protection, and lead-free solder pastes are also required.
  • electronic components made from the above-mentioned resistance paste are becoming increasingly smaller and have higher performance, and as a result, resistance resistors with higher resistance and lower current noise are produced. What can be done is required.
  • the present invention has been made in view of the above situation, and can form a lead-free thick film resistor excellent in electrical characteristics capable of suppressing current noise while having a high resistance value.
  • An object is to provide a lead-free resistance paste.
  • the present inventor uses a lead-free oxide containing ruthenium in conductive particles by including a specific additive in the resistance paste. At the same time, it has been found that a resistor having good electrical characteristics can be produced even when a lead-free glass frit is used, and the present invention has been completed.
  • the resistance paste provided by the present invention is a resistance paste containing conductive particles made of ruthenium dioxide, a glass frit containing no lead, an organic vehicle, and an additive, wherein the additive has a specific surface area. It is characterized by containing 5% by mass or more and 12% by mass or less of amorphous silica of 60 m 2 / g or more and 125 m 2 / g or less.
  • a resistance paste capable of producing a thick film resistor excellent in electrical characteristics capable of suppressing current noise to a low level while having a high resistance value without causing environmental pollution due to lead. Can do.
  • the resistance paste of the present invention There is no restriction
  • the oxide obtained by a general manufacturing method can be used.
  • the average particle diameter by diameter is preferably 1.0 ⁇ m or less.
  • the glass frit contained in the resistance paste is not particularly limited as long as it does not contain lead.
  • borosilicate glass, aluminoborosilicate glass, borosilicate alkaline earth glass, borosilicate alkali glass, borosilicate zinc glass, borosilicate bismuth glass, or the like can be used.
  • D50 diameter measured by laser diffraction particle size distribution measurement of glass frit to minimize the conductive path in the thick film resistor and suppress variations in resistance value and current noise of the thick film resistor as much as possible. Is preferably 5 ⁇ m or less.
  • the organic vehicle contained in the resistance paste may be one that is usually used in resistance pastes, for example, a resin in which a resin such as ethyl cellulose, butyral, or acrylic is dissolved in a solvent such as terpineol or butyl carbitol acetate. Preferably used.
  • the resistance paste further contains 5% by mass to 12% by mass of amorphous silica (SiO 2 ) having a specific surface area of 60 m 2 / g or more and 125 m 2 / g or less as an additive.
  • Amorphous silica has a function of increasing current resistance by increasing the resistance value of the resistor formed by firing.
  • the reason why the specific surface area of amorphous silica is limited to 60 m 2 / g or more and 125 m 2 / g or less is that current noise (dB) is hardly negative when the specific surface area is less than 60 m 2 / g, and conversely 125 m 2 / g.
  • the content of amorphous silica is set to 5% by mass or more and 12% by mass or less with respect to the resistance paste. This is because the current noise (dB) is unlikely to become negative even if the value exceeds the value.
  • the method for producing the resistance paste of the above-described embodiment of the present invention is not particularly limited, and a predetermined amount of the components of the resistance paste described above is weighed into a commercially available kneading apparatus such as a roll mill, and kneaded. Can be produced. At that time, the mixing ratio of the conductive particles and the glass frit is preferably about 5/95 to 50/50 in terms of the ratio of the conductive particles / glass frit on a mass basis. Further, the method for manufacturing the resistor is not particularly limited, and the resistor can be formed by the same method as the conventional one using the resistor paste of the embodiment of the present invention as a material.
  • the above-mentioned resistance paste is applied to a normal substrate such as an alumina substrate by screen printing or the like, dried, and then fired at a peak temperature of about 800 to 900 ° C. using a belt furnace or the like, thereby lead-free. Can be formed.
  • the resistor paste according to the embodiment of the present invention is conventionally used in various ways such as dispersants and plasticizers that are conventionally used to adjust the electrical characteristics of thick film resistors. You may add an additive as needed.
  • Conductive particles, glass frit, organic vehicle, and additives are mixed at various blending ratios to prepare multiple resistor paste samples, which are then fired to form thick film resistors and their electrical properties was evaluated.
  • RuO 2 powder having a BET diameter of 40 nm prepared by roasting ruthenium hydroxide was prepared as the conductive particles.
  • the glass frit was prepared by mixing, melting, quenching and pulverizing by a general method, 10 mass% SrO-43 mass% SiO 2 -16 mass% B 2 O 3 -4 mass% Al 2 O 3 -20 mass
  • a glass frit having a composition of% ZnO-7 mass% Na 2 O and having a D50 of 1.9 ⁇ m as measured by laser diffraction particle size distribution was prepared.
  • amorphous SiO 2 having specific surface areas of 3 m 2 / g, 30 m 2 / g, 60 m 2 / g, 80 m 2 / g, and 125 m 2 / g are prepared as additives, and organic vehicles are used as organic vehicles.
  • an alumina substrate on which two electrodes having an interelectrode distance of 1 mm are formed using AgPd paste is prepared for the resistance paste of each sample, and the two electrodes are connected on the alumina substrate.
  • the film was screen-printed to a width of 1 mm, dried at 150 ° C. for 10 minutes, and then fired in a belt furnace at a peak temperature of 850 ° C. for 9 minutes.
  • the electrical characteristics (resistance value, current noise) of the thick film resistor thus fabricated were measured.
  • the composition of the resistance paste and the characteristics of the resistor obtained by each paste are shown in Table 1 below.
  • the resistance value was measured by a 4-terminal method using a Model 2001 Multimeter manufactured by KEITHLEY, and the current noise was measured by applying a 1/10 W using a noise meter Model 315C manufactured by Quan-Tech.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Dispersion Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Conductive Materials (AREA)
  • Non-Adjustable Resistors (AREA)
  • Glass Compositions (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

Provided are: a lead-free thick film resistor which has good electrical characteristics such as low current noise, while having a high resistance; and a lead-free resistive paste which serves as a starting material for this resistor. A resistive paste which contains conductive particles that are formed from ruthenium dioxide, a glass frit that does not contain lead, an organic vehicle and an additive, and wherein from 5% by mass to 12% by mass (inclusive) of amorphous silica having a specific surface area of from 60 m2/g to 125 m2/g (inclusive) is contained as the additive.

Description

抵抗ペースト及びその焼成により作製される抵抗体Resistive paste and resistor produced by firing the same

 本発明は、厚膜チップ抵抗器やハイブリッドICなどの抵抗体の材料として使用される抵抗ペースト、特に鉛を含有しない抵抗ペースト及びこれを焼成して作製される抵抗体に関するものである。 The present invention relates to a resistor paste used as a resistor material such as a thick film chip resistor or a hybrid IC, and more particularly to a resistor paste not containing lead and a resistor produced by firing the paste.

 従来、電子部品の抵抗体被膜を形成する方法としては、膜形成材料を含む抵抗ペーストを用いて成膜する厚膜方式と膜形成材料をスパッタリング等することで成膜する薄膜方式が一般的に知られている。それらのうち、厚膜方式は抵抗ペーストをセラミック基板上に印刷した後、焼成することで抵抗体を形成するものであり、この方法は成膜に必要な設備が安価で生産性も高いことから、チップ抵抗器やハイブリッドICなどの電子部品が有する抵抗体の製造に広範に利用されている。 Conventionally, as a method for forming a resistor film of an electronic component, a thick film method in which a film is formed using a resistance paste containing a film forming material and a thin film method in which a film forming material is formed by sputtering or the like are generally used. Are known. Among them, the thick film method is to form a resistor by printing a resistor paste on a ceramic substrate and then firing it. This method is inexpensive and has high productivity required for film formation. It is widely used for manufacturing resistors included in electronic components such as chip resistors and hybrid ICs.

 上記の厚膜方式に用いる抵抗ペーストは、導電性粒子及びガラスフリット、並びにそれらを印刷に適したペースト状にするための有機ビヒクルを含有している。導電性粒子としては、二酸化ルテニウム(RuO)やパイロクロア型ルテニウム系酸化物(PbRu7-X、BiRu)が一般に使われている。このように導電性粒子としてRu系酸化物を用いるのは、主に導電性粒子の濃度に対して抵抗値がなだらかに変化するためである。 The resistive paste used in the above thick film system contains conductive particles and glass frit, and an organic vehicle for making them suitable for printing. As the conductive particles, ruthenium dioxide (RuO 2 ) or pyrochlore-type ruthenium-based oxides (Pb 2 Ru 2 O 7-X , Bi 2 Ru 2 O 7 ) are generally used. The reason why the Ru-based oxide is used as the conductive particles is mainly because the resistance value changes gently with respect to the concentration of the conductive particles.

 また、ガラスフリットとしては、ホウケイ酸鉛ガラス(PbO-SiO-B)やアルミノホウケイ酸鉛ガラス(PbO-SiO-B-Al)など、鉛を多量に含むホウケイ酸鉛系ガラスが使われている。このようにガラスフリットにホウケイ酸鉛系ガラスを用いるのは、Ru系酸化物との濡れ性が良く、熱膨張係数が基板のそれに近く、焼成時の粘性などが適しているからである。 In addition, as a glass frit, a large amount of lead such as lead borosilicate glass (PbO—SiO 2 —B 2 O 3 ) and lead aluminoborosilicate glass (PbO—SiO 2 —B 2 O 3 —Al 2 O 3 ) is used. Including lead borosilicate glass. The reason why the lead borosilicate glass is used for the glass frit in this way is that it has good wettability with the Ru-based oxide, has a thermal expansion coefficient close to that of the substrate, and has a suitable viscosity during firing.

 上記の抵抗ペーストでは、成膜後の抵抗体の特性を改善するため、各種添加剤を含有させることが昔から行われている。例えば特許文献1には、微細化された酸化ルテニウム粉末と、PbOを有するガラスと、酸化ニオブ(Nb)とを不活性ビヒクルと共に混合して電気的特性に優れた厚膜抵抗体用の抵抗ペーストを作製する技術が開示されている。 In the above-described resistance paste, various additives have been included for a long time in order to improve the characteristics of the resistor after film formation. For example, Patent Document 1 discloses a thick film resistor excellent in electrical characteristics by mixing a refined ruthenium oxide powder, a glass containing PbO, and niobium oxide (Nb 2 O 5 ) together with an inert vehicle. A technique for producing a resistive paste is disclosed.

特公昭63-035081号公報Japanese Examined Patent Publication No. 63-035081

 しかしながら、添加剤としてNbを用いた場合には、少量の添加量で特性の向上が図れるが、抵抗値も大きく変わってしまうため、抵抗値の調整が難しいという問題点があった。また、近年、環境保護に配慮して電子部品では鉛フリー化が進められており、抵抗ペーストにおいても鉛フリー化が求められている。また、上記した抵抗ペーストを材料にして作製される電子部品等はますます小型化、高性能化する傾向にあり、これに伴い抵抗ペーストには抵抗値が高くかつ電流ノイズの小さい抵抗体を作製できるものが求められている。 However, when Nb 2 O 5 is used as an additive, the characteristics can be improved with a small addition amount, but the resistance value is also greatly changed, so that there is a problem that it is difficult to adjust the resistance value. In recent years, lead-free electronic components have been promoted in consideration of environmental protection, and lead-free solder pastes are also required. In addition, electronic components made from the above-mentioned resistance paste are becoming increasingly smaller and have higher performance, and as a result, resistance resistors with higher resistance and lower current noise are produced. What can be done is required.

 本発明は上記の状況に鑑みてなされたものであり、高い抵抗値を有しながら電流ノイズを小さく抑えることが可能な電気的特性に優れた鉛フリーの厚膜抵抗体を形成することができる鉛フリーの抵抗ペーストを提供することを目的とする。 The present invention has been made in view of the above situation, and can form a lead-free thick film resistor excellent in electrical characteristics capable of suppressing current noise while having a high resistance value. An object is to provide a lead-free resistance paste.

 本発明者は、上記目的を達成可能な鉛フリーの抵抗ペーストについて検討を重ねた結果、抵抗ペーストに特定の添加剤を含有させることによって、導電性粒子にルテニウムを含む鉛フリーの酸化物を用いると共に、ガラスフリットにも鉛フリーのものを用いる場合であっても良好な電気的特性を有する抵抗体を作製できることを見出し、本発明を完成するに至った。 As a result of repeated studies on a lead-free resistance paste capable of achieving the above object, the present inventor uses a lead-free oxide containing ruthenium in conductive particles by including a specific additive in the resistance paste. At the same time, it has been found that a resistor having good electrical characteristics can be produced even when a lead-free glass frit is used, and the present invention has been completed.

 即ち、本発明が提供する抵抗ペーストは、二酸化ルテニウムからなる導電性粒子と、鉛を含まないガラスフリットと、有機ビヒクルと、添加剤とを含有する抵抗ペーストであって、前記添加剤として比表面積60m/g以上125m/g以下の非晶質シリカが5質量%以上12質量%以下含まれていることを特徴としている。 That is, the resistance paste provided by the present invention is a resistance paste containing conductive particles made of ruthenium dioxide, a glass frit containing no lead, an organic vehicle, and an additive, wherein the additive has a specific surface area. It is characterized by containing 5% by mass or more and 12% by mass or less of amorphous silica of 60 m 2 / g or more and 125 m 2 / g or less.

 本発明によれば、鉛による環境汚染を引き起こすことなく、高い抵抗値を有しながら電流ノイズを小さく抑えることが可能な電気的特性に優れた厚膜抵抗体を作製できる抵抗ペーストを提供することができる。 According to the present invention, there is provided a resistance paste capable of producing a thick film resistor excellent in electrical characteristics capable of suppressing current noise to a low level while having a high resistance value without causing environmental pollution due to lead. Can do.

 以下、本発明の抵抗ペーストの実施形態について説明する。この本発明の実施形態の抵抗ペーストに含有される導電性粒子としての二酸化ルテニウムの形態については特に制限はなく、一般的な製法で得られる酸化物を使用することができる。ただし、焼成により形成される厚膜抵抗体の抵抗値のばらつきや電流ノイズをできるだけ抑えるため、当該厚膜抵抗体中の導電パスを微細にするのが望ましく、そのためには酸化物の粒子のBET径による平均粒径は1.0μm以下であるのが望ましい。 Hereinafter, embodiments of the resistance paste of the present invention will be described. There is no restriction | limiting in particular about the form of ruthenium dioxide as electroconductive particle contained in this resistance paste of embodiment of this invention, The oxide obtained by a general manufacturing method can be used. However, in order to suppress the variation in resistance value and current noise of the thick film resistor formed by firing as much as possible, it is desirable to make the conductive path in the thick film resistor finer. The average particle diameter by diameter is preferably 1.0 μm or less.

 上記抵抗ペーストに含有されるガラスフリットは、鉛を含まないものであれば特にその組成に制限はない。例えば、ホウケイ酸ガラス、アルミノホウケイ酸ガラス、ホウケイ酸アルカリ土類ガラス、ホウケイ酸アルカリガラス、ホウケイ酸亜鉛ガラス、ホウケイ酸ビスマスガラスなどを用いることができる。前述したように、厚膜抵抗体中の導電パスを微細にして該厚膜抵抗体の抵抗値のばらつきや電流ノイズをできるだけ抑えるため、ガラスフリットのレーザー回折式粒度分布測定によるD50(メジアン径)は5μm以下であることが好ましい。 The glass frit contained in the resistance paste is not particularly limited as long as it does not contain lead. For example, borosilicate glass, aluminoborosilicate glass, borosilicate alkaline earth glass, borosilicate alkali glass, borosilicate zinc glass, borosilicate bismuth glass, or the like can be used. As described above, D50 (median diameter) measured by laser diffraction particle size distribution measurement of glass frit to minimize the conductive path in the thick film resistor and suppress variations in resistance value and current noise of the thick film resistor as much as possible. Is preferably 5 μm or less.

 上記抵抗ペーストに含有される有機ビヒクルは、抵抗ペーストに通常使用されているものであってよく、例えば、エチルセルロース、ブチラール、アクリルなどの樹脂をターピネオール、ブチルカルビトールアセテートなどの溶剤に溶解したものが好適に用いられる。 The organic vehicle contained in the resistance paste may be one that is usually used in resistance pastes, for example, a resin in which a resin such as ethyl cellulose, butyral, or acrylic is dissolved in a solvent such as terpineol or butyl carbitol acetate. Preferably used.

 上記抵抗ペーストは、更に添加剤として比表面積60m/g以上125m/g以下の非晶質シリカ(SiO)を5質量%以上12質量%以下含有している。非晶質シリカは、焼成により形成される抵抗体の抵抗値を上昇させて電流ノイズを小さくする働きを有している。非晶質シリカの比表面積を60m/g以上125m/g以下に限定する理由は、比表面積が60m/g未満では電流ノイズ(dB)がマイナスになりにくく、逆に125m/gを超えると抵抗ペーストの粘度が高くなり過ぎて該抵抗ペーストの調製が困難になるからである。また、非晶質シリカの含有量を抵抗ペーストに対して5質量%以上12質量%以下とするのは、5質量%未満では電流ノイズ(dB)がマイナスになりにくく、逆に12質量%を超えても電流ノイズ(dB)がマイナスになりにくくなるからである。 The resistance paste further contains 5% by mass to 12% by mass of amorphous silica (SiO 2 ) having a specific surface area of 60 m 2 / g or more and 125 m 2 / g or less as an additive. Amorphous silica has a function of increasing current resistance by increasing the resistance value of the resistor formed by firing. The reason why the specific surface area of amorphous silica is limited to 60 m 2 / g or more and 125 m 2 / g or less is that current noise (dB) is hardly negative when the specific surface area is less than 60 m 2 / g, and conversely 125 m 2 / g. This is because the viscosity of the resistance paste becomes too high and it becomes difficult to prepare the resistance paste. In addition, the content of amorphous silica is set to 5% by mass or more and 12% by mass or less with respect to the resistance paste. This is because the current noise (dB) is unlikely to become negative even if the value exceeds the value.

 上記した本発明の実施形態の抵抗ペーストの製造法は特に制約がなく、ロールミルなどの市販の混練装置に、上記した抵抗ペーストの構成成分の所定量を秤量して装入し、混練することで作製することができる。その際、導電性粒子とガラスフリットの混合割合は、質量基準による導電性粒子/ガラスフリットの比で5/95~50/50程度であるのが好ましい。また、抵抗体の作製法も特に制約がなく、上記した本発明の実施形態の抵抗ペーストを材料として用いて従来と同様の方法で形成することができる。例えば、上記した抵抗ペーストをアルミナ基板などの通常の基板上にスクリーン印刷法などにより塗布し、乾燥した後、ベルト炉などを用いて800~900℃程度のピーク温度で焼成することによって、鉛フリーの抵抗体を形成することができる。 The method for producing the resistance paste of the above-described embodiment of the present invention is not particularly limited, and a predetermined amount of the components of the resistance paste described above is weighed into a commercially available kneading apparatus such as a roll mill, and kneaded. Can be produced. At that time, the mixing ratio of the conductive particles and the glass frit is preferably about 5/95 to 50/50 in terms of the ratio of the conductive particles / glass frit on a mass basis. Further, the method for manufacturing the resistor is not particularly limited, and the resistor can be formed by the same method as the conventional one using the resistor paste of the embodiment of the present invention as a material. For example, the above-mentioned resistance paste is applied to a normal substrate such as an alumina substrate by screen printing or the like, dried, and then fired at a peak temperature of about 800 to 900 ° C. using a belt furnace or the like, thereby lead-free. Can be formed.

 尚、本発明の実施形態の抵抗ペーストは、上記した必須成分の他に、厚膜抵抗体の電気的特性を調整するために従来から通常使用されている例えば分散剤、可塑剤などの種々の添加剤を必要に応じて添加してもよい。 In addition to the essential components described above, the resistor paste according to the embodiment of the present invention is conventionally used in various ways such as dispersants and plasticizers that are conventionally used to adjust the electrical characteristics of thick film resistors. You may add an additive as needed.

 導電性粒子、ガラスフリット、有機ビヒクル、及び添加剤を様々な配合割合で混合して複数の抵抗ペースト試料を調製し、それらを各々焼成することで厚膜抵抗体を形成し、その電気的特性について評価した。具体的には、導電性粒子には水酸化ルテニウムを焙焼することによって作製したBET径40nmのRuO粉末を用意した。ガラスフリットには一般的な方法で混合、溶融、急冷、粉砕することによって作製した10質量%SrO-43質量%SiO-16質量%B-4質量%Al-20質量%ZnO-7質量%NaOの組成を有するレーザー回折式粒度分布測定によるD50が1.9μmのガラスフリットを用意した。 Conductive particles, glass frit, organic vehicle, and additives are mixed at various blending ratios to prepare multiple resistor paste samples, which are then fired to form thick film resistors and their electrical properties Was evaluated. Specifically, RuO 2 powder having a BET diameter of 40 nm prepared by roasting ruthenium hydroxide was prepared as the conductive particles. The glass frit was prepared by mixing, melting, quenching and pulverizing by a general method, 10 mass% SrO-43 mass% SiO 2 -16 mass% B 2 O 3 -4 mass% Al 2 O 3 -20 mass A glass frit having a composition of% ZnO-7 mass% Na 2 O and having a D50 of 1.9 μm as measured by laser diffraction particle size distribution was prepared.

 添加剤には比表面積がそれぞれ3m/g、30m/g、60m/g、80m/g、及び125m/gの5種類の非晶質SiOを用意し、有機ビヒクルにはエチルセルロースとターピネオールを主成分とするものを用意した。これらRuO粉末、ガラスフリット、添加剤、及び有機ビヒクルを様々な配合割合となるように秤量し、三本ロールミルで混練した。これにより試料1~17の抵抗ペーストを作製した。 Five types of amorphous SiO 2 having specific surface areas of 3 m 2 / g, 30 m 2 / g, 60 m 2 / g, 80 m 2 / g, and 125 m 2 / g are prepared as additives, and organic vehicles are used as organic vehicles. A material mainly composed of ethyl cellulose and terpineol was prepared. These RuO 2 powder, glass frit, additive, and organic vehicle were weighed so as to have various blending ratios and kneaded by a three-roll mill. Thus, resistance pastes of Samples 1 to 17 were produced.

 次に、各試料の抵抗ペーストに対して、AgPdペーストを用いて電極間距離1mmの2つの電極が形成されたアルミナ基板を用意し、該アルミナ基板上において上記両電極を接続するように抵抗ペーストを幅1mmにスクリ-ン印刷し、150℃で10分間乾燥した後、ベルト炉にてピーク温度850℃で9分間焼成した。このようにして作製した厚膜抵抗体の電気的特性(抵抗値、電流ノイズ)を測定した。抵抗ペーストの組成と各ペーストによって得られた抵抗体の特性を下記表1に示す。尚、抵抗値はKEITHLEY社製のModel2001Multimeterを用いて4端子法にて測定し、電流ノイズはQuan-Tech社製のノイズメーターModel315Cを用いて1/10W印加で測定した。 Next, an alumina substrate on which two electrodes having an interelectrode distance of 1 mm are formed using AgPd paste is prepared for the resistance paste of each sample, and the two electrodes are connected on the alumina substrate. The film was screen-printed to a width of 1 mm, dried at 150 ° C. for 10 minutes, and then fired in a belt furnace at a peak temperature of 850 ° C. for 9 minutes. The electrical characteristics (resistance value, current noise) of the thick film resistor thus fabricated were measured. The composition of the resistance paste and the characteristics of the resistor obtained by each paste are shown in Table 1 below. The resistance value was measured by a 4-terminal method using a Model 2001 Multimeter manufactured by KEITHLEY, and the current noise was measured by applying a 1/10 W using a noise meter Model 315C manufactured by Quan-Tech.

Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001

 上記表1から分かるように、安価なRuOからなる導電性粒子と鉛フリーのガラスフリットとを用いて厚膜抵抗体を形成した場合においても、添加剤として比表面積60m/g以上125m/g以下の非晶質SiOを本発明が規定する範囲内で添加することによって、非晶質SiOを加えない場合や本発明の要件の満たさない態様で非晶質SiOを添加する場合に比べて電流ノイズを小さくできることが分かる。 As can be seen from Table 1, in the case of forming a thick film resistor with conductive particles and lead-free glass frit consisting of low-cost RuO 2 also, a specific surface area of 60 m 2 / g or more as an additive 125m 2 / by g or less amorphous SiO 2 is present invention is added in a range defined, the addition of amorphous SiO 2 in a manner that does not meet the requirements for and the present invention without added amorphous SiO 2 It can be seen that the current noise can be reduced compared to the case.

Claims (4)

 二酸化ルテニウムからなる導電性粒子と、鉛を含まないガラスフリットと、有機ビヒクルと、添加剤とを含有する抵抗ペーストであって、前記添加剤として比表面積60m/g以上125m/g以下の非晶質シリカが5質量%以上12質量%以下含まれていることを特徴とする抵抗ペースト。 A resistive paste containing conductive particles made of ruthenium dioxide, glass frit containing no lead, an organic vehicle, and an additive, having a specific surface area of 60 m 2 / g or more and 125 m 2 / g or less as the additive. A resistive paste comprising amorphous silica in an amount of 5% by mass to 12% by mass.  請求項1に記載の抵抗ペーストを焼成してなる鉛フリーの抵抗体。 A lead-free resistor formed by firing the resistor paste according to claim 1.  請求項2に記載の抵抗体を有することを特徴とする電子部品。 An electronic component comprising the resistor according to claim 2.  請求項1に記載の抵抗ペーストを焼成することで抵抗体を作製することを特徴とする鉛フリーの抵抗体の製造方法。 A method for producing a lead-free resistor, wherein the resistor is produced by firing the resistor paste according to claim 1.
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