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WO2018068101A1 - Procédé de formation d'une couche de pérovskite absorbant la lumière, destinée à une cellule photovoltaïque et cellule photovoltaïque comprenant la couche de pérovskite absorbant la lumière - Google Patents

Procédé de formation d'une couche de pérovskite absorbant la lumière, destinée à une cellule photovoltaïque et cellule photovoltaïque comprenant la couche de pérovskite absorbant la lumière Download PDF

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Publication number
WO2018068101A1
WO2018068101A1 PCT/AU2017/051114 AU2017051114W WO2018068101A1 WO 2018068101 A1 WO2018068101 A1 WO 2018068101A1 AU 2017051114 W AU2017051114 W AU 2017051114W WO 2018068101 A1 WO2018068101 A1 WO 2018068101A1
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ion
perovskite
cation
hybridising
monovalent
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Ashraf Uddin
Naveen Kumar ELUMALAI
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NewSouth Innovations Pty Ltd
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NewSouth Innovations Pty Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention generally relates to photovoltaic thin film devices comprising a perovskite based light absorbing material.
  • PV photovoltaic
  • PV devices are often referred to as thin film solar cells.
  • Cadmium telluride cells are an example of a thin film solar cell technology which had a major commercial success and competes on the marked with conventional wafer-based silicon cells.
  • perovskite PVs has the lowest energy payback time (EPBT) compared to any PV technology ever developed .
  • perovskite based PV devices One of the main problems of perovskite based PV devices is related to operational stability. In other words, the time it takes before the performance of the PV device start degrading. The stability of current perovskite PV devices is in the range of ⁇ 4000 hours. This figure is not compatible with the majority of commercial PV
  • the present invention provides a method for manufacturing a stable perovskite photovoltaic device comprising the steps of: providing a substrate; forming an electron transport layer which facilitates the transport of electrons from the
  • the step of forming a photon absorbing layer comprises the steps of: providing a first monovalent organic cation; providing a divalent metal cation; providing a monovalent halide anion; hybridising the first monovalent organic cation with a second metal divalent cation; and hybridising the monovalent halide anion with a pseudohalide compound; and the steps of hybridising the first monovalent organic cation with a second metal divalent cation and hybridising the monovalent halide anion with a
  • pseudohalide compound are performed in a manner such that the stability of the material that has a perovskite structure is improved.
  • the steps of hybridising the first monovalent organic cation with a second metal divalent cation and hybridising the monovalent halide anion with a pseudohalide compound are performed simultaneously in a dual-ion hybridisation process. These steps may be performed as fractional hybridisation processes.
  • the first monovalent organic cation is generally an A-site of the compound and may be a Formamidinium ion (FA + ) .
  • the first monovalent organic cation may be hybridised with alkali ions, such as a Caesium ion (Cs + ) or/and Rubidium (Rb + ) .
  • the halide anion is generally an X-site I ⁇ , Br ⁇ or Cl ⁇ ion and may be hybridised with a thiocynate compound, such as SCN-, SeCN- or OC .
  • the perovskite absorbing layer formed by following steps defined above provides an improved stability in comparison to CH 3 NH 3 Pbl 3 perovskite absorbers used in current thin films perovskite solar cells. The stability may be improved more than 30 times.
  • the method further comprises the step of forming a charge selective interlayer adjacent the photon absorbing layer to further improve stability of the perovskite material.
  • the charge selective interlayer may comprise Sn0 2 or Spiro-OMeTAD .
  • invention provides a photovoltaic device manufactured in accordance with the method of the first aspect.
  • the present invention provides a composition for an absorber material of a solar cell, the composition comprising a perovskite material of formula ( I ) :
  • A is a hybridised monovalent cation comprising a Formamidinium ion (FA + ) and a Caesium ion (Cs + ) ;
  • B is a divalent metal cation selected from the group consisting of Ge 2+ , Sn 2+ , or Pb 2+ , and
  • X is a hybridised ion comprising a monovalent halide selected from the group consisting of I ⁇ , Br ⁇ or Cl ⁇ and a pseudohalide compound selected from the group consisting of SCN " , SeCN “ or OCN.
  • photovoltaic device comprising: a substrate; an electron transport layer; a light-absorbing layer comprising a perovskite material based on the composition of the third aspect; and a hole transport layer; a contact arrangement; wherein photons absorbed in the light-absorbing layer induce generation of charge carriers that are extractable via the contact arrangement .
  • Embodiments allow to substantially improve the chemical and thermodynamic stability of the absorber layer of perovskite solar cells without compromising their high performance.
  • Embodiments use a new approach to harness the integrated benefits of simultaneous ion hybridization in perovskite materials via A-site Cation hybridization (Metal - Organic) and X-site Anion hybridization (Halide - Pseudohalide ) within the highly successful framework (in terms of power conversion efficiency) of the archetypal organic-inorganic hybrid lead halide perovskite (ABX 3 ) configuration.
  • the invention is unprecedented and first of the kind to inter-combine the phase/entropic stabilization characteristics of concurrent metal and pseudohalide ion incorporation within the perovskite crystal lattice.
  • Embodiments of the invention provide a stable hybrid perovskite material, for the fabrication of PV devices, via dual-ion hybridization that is highly photo-active as well as intrinsically robust with excellent moisture, thermal and phase stability.
  • Figure 1 is a flow diagram outlining a series of method steps to manufacture a photovoltaic device comprising a stable hybrid perovskite material in accordance with an embodiment of the invention
  • FIG. 2 shows an illustration of the dual-ion
  • Figure 3 is a schematic illustration of a photovoltaic device comprising of a stable hybrid perovskite material in accordance with an embodiment
  • Figure 4 shows a simulated current-voltage curve for a photovoltaic device comprising of a stable hybrid perovskite material in accordance with an embodiment
  • Figure 5 shows simulated efficiencies as a function of time for a photovoltaic device comprising of a stable hybrid perovskite material and a conventional perovskite based PV device;
  • Figure 6 is a schematic view of the doping process of the Electron Transport Layer and the perovskite device structure employing triple cation based perovskite as light absorbing layer with a J-V curve;
  • Figure 7 is a schematic representation of fabricated PSCs (CA device and CC device) (a) and J-V curves (both FB-SC and SC-FB direction at 0.05 V/s) of the best performing CC device (b) and CA device (c) .
  • Embodiments described herein are directed to a PV device which has a photon absorbing layer that comprises a material that has an ABX 3 perovskite structure.
  • the absorber material is formed by dual-ion hybridisation of the A-site and the X-site of the perovskite.
  • the absorber material is formed by hybridising a Formamidinium ion (FA+) with a Caesium ion (Cs+) or/and Rb + and hybridising a I-, Br- or CI- ion with a thiocynate compound, such as SCN-, SeCN- or OCN.
  • hybridisation steps are performed simultaneously to provide a perovskite material with a better chemical and thermodynamic stability.
  • the degradation of perovskite PV devices is predominantly due to the chemical and structural instability of the light absorbing perovskite materials.
  • the ions at the A-site and the X-site are found to be the most vulnerable components leading to the destruction of the perovskite crystal structure, when exposed to ambient conditions or heat, moisture and light (UV) .
  • PV devices based on the hybrid inorganic-organic lead halide perovskite materials consisting of the ABX 3 crystal structure, where A is an organic cation, B is a metallic cation (typically Pb 2+ ) and X is a halide anion
  • the method provides a feasible strategy to solve the intrinsic stability issue prevalent in HPSCs without compromising performance efficiency, by means of dual-ion hybridization and compositional engineering of hybrid perovskite materials.
  • the resulting perovskite addresses the degradation issues arising out of moisture, heat and light simultaneously. These simultaneous benefit have never been achieved in the art.
  • hybrid perovskite materials which include optoelectronic devices such as LEDs, Photodetectors , Laser, and FETs etc.
  • FIG. 10 there is shown a flow diagram 10 with steps to realise a PV device with a photon absorbing layer that comprises a material that has an ABX 3 perovskite structure using the dual-ion hybridisation process .
  • a substrate upon which the PV device is manufactured is provided.
  • the substrate can be a polymer or a glass and be flexible or hard.
  • an electron transport layer which facilitates the transport of electrons from the photovoltaic device to a contact structure is formed.
  • Thin film perovskite cells do not have a semiconductor junction like traditional silicon solar cells . Therefore an electron and a hole selective layers allow to split carriers in the device.
  • Step 16 the photon absorbing layer that comprises the material with an ABX 3 perovskite structure is formed.
  • Step 16 include a number of different steps that allow for the dual-hybridisation process to be performed.
  • a first monovalent organic cation is provided.
  • a divalent metal cation is provided and, at step 16c, a monovalent halide anion is provided.
  • the first monovalent organic cation and the second metal divalent cation are hybridised at step 16d and simultaneously the monovalent halide anion the pseudohalide compound are hybridised at step 16e.
  • a hole transport layer which facilitates the transport of holes from the photovoltaic device to a contact structure is formed before forming a contact arrangement for extraction of charge carriers .
  • FIG 2 there is shown a schematic diagram illustrating an embodiment of the dual-ion hybridisation process .
  • the A-site of the perovskite is hybridised with FA +
  • Cs + or/and Rb + allows for increased formation of the lead-X halide complex providing a good moisture stability.
  • Cs + provides high inter-ionic interaction with A site ions, enhancing thermal and light stability. Cs + also allows removing halide segregation under light soaking and helps stabilising the physical structure of the
  • FA + provides an enhanced thermal stability due to the organic cation and good photoactive and bandgap
  • the X-site of the perovskite is hybridised with a I ⁇ , Br ⁇ or Cl ⁇ ion and a SCN ⁇ ion.
  • SCN increases the entropic stability of the perovskite and enhances thermal
  • the hybridisation process is a fractional process, the fractional substitution allows for better phase stability and reduces the moisture solvation of FA + ions, improving moisture stability.
  • SCN ⁇ also allows for improved thermal stability.
  • FIG 3 there is shown a schematic illustration 30 of a photovoltaic device comprising of a stable hybrid perovskite material in accordance with an embodiment.
  • the device has a dual-ion hybridised
  • Layer 32 is positioned between a Spiro-OMeTAD electron blocking layer 34 and a Sn0 2 /PCBM hole blocking layer 36. The operation of the electrons and holes blocking layers have been discussed above .
  • Device 30 is realised on a glass substrate coated with a conductive FTO layer 38.
  • the front contact of device 30 is realised using a silver layer 40.
  • the type of device shown in figure 3 offers four degrees of freedom serving as the template for developing the most stable perovskite film developed till date. Furthermore, the stability of the dual-ion hybridized perovskite absorber films can be further enhanced during fabrication by employing suitable and stable charge selective
  • composition can adopt different crystal structures depending on the size and interaction of the A cation and the corner-sharing BX 6 octahedra.
  • Goldschmidt tolerance factor (t) is a reliable empirical index to predict which structure is preferentially formed.
  • the Goldschmidt tolerance factor is calculated from the ionic radius of the atoms using the following expression:
  • r A is the radius of the A cation
  • r B is the radius o the B cation
  • the method designed by the inventors uses dual-ion hybridization to tune the tolerance factor as a compositional design strategy which not only stabilizes the perovskite structure, but also passivates the vulnerability of the A- and X-sites.
  • the method employs Formamidinium iodide (FAPb ⁇ 3) serving as the archetypal 01 base material for ion hybridization to start with.
  • perovskite phase of the FAPbI 3 compound but also suppress the decomposition to Pbl 2 .
  • Incorporation of partial Cs ion in FA-site results in contraction of cubo-octahedral volume and thereby enhances (FA-I) interaction.
  • Such metal hybridization with the organic cation also increases the interaction between the organic cation -X hydrogen bonding thereby resulting in enhancement of the stability of the perovskite crystal lattice and hindering the retrograde degradation to Pb ⁇ 2.
  • Cs incorporation in FA site with a fraction of x results in an optimal bandgap of Eg ⁇ 1.5-1.6 eV, much favourable for light absorption similar to that of MAPbI 3 .
  • the stability of CsxFAx-xPBIs alloys could be further enhanced by replacing two of the halide ions (I ⁇ ) with pseudohalides or
  • SCN ⁇ thiocyanate
  • the first step of degradation in moisture involves the formation of hydrated intermediate containing isolated PbX 6 4 ⁇ octahedra.
  • the formation constant of the lead halide complex is essentially its equilibrium
  • Combining (2) and (3) would result in A R H 3 ⁇ 42 .8-3 eV resulting in high resistance to spontaneous decomposition of perovskite structure.
  • a R H is the energetics required for the decomposition of perovskite structure. The negative sign indicates
  • simultaneous hybridization of Cs + (metal) ion and FA + (organic) ion at the A-site and hybridization of the halide ions with SCN (pseudohalide ) ions at the X-site combines the advantages of both strategies resulting in a highly stable perovskite structure with an optimal band gap of 1.5-1.6 eV with the cubic or pseudo-cubic structure (near ideal tolerance factor) , thereby achieving high PCE as well as high stability simultaneously.
  • the step of forming the photon absorbing layer 32 require the preparation of a perovskite precursor solution mixture.
  • a perovskite with Iodide and SCN ions hybridised at the X-site and Cs + and FA + ion hybridised at A-site is used.
  • FAi_ x Cs x Pb ( SCN) 2 I perovskite precursor solution To begin with the precursor is primed by dissolving (200 mg) of Lead thiocyanate Pb(SCN)2, Formamidinium iodide FAI (172 mg) , and DMSO (78 mg) in 600 mg of DMF under stirring at 60 °C for 3 h.
  • A-site hybridization i.e.
  • Pb(SCN) 2 , and Csl) allows tailoring of the crystallization kinetics resulting in improved thin film homogeneity.
  • precursor preparation methodology may be varied
  • FTO Device 30 is fabricated on fluorine-doped tin oxide (FTO) 38 coated glass (Pilkington, 7Q/D -1 ) .
  • FTO fluorine-doped tin oxide
  • patterned FTO Substrates are cleaned sequentially in Hellmanex detergent, acetone, isopropyl alcohol.
  • FTO is then cleaned for 10 minutes using oxygen plasma.
  • the hole-blocking layer 36 is formed by immersing the cleaned FTO substrate in a bath of 40 mM SnCl 4 in aqueous solution for 30 minutes at 80 °C.
  • the substrates are then immediately rinsed with two consecutive deionized water baths and then sonicated for 10 s in an ethanol bath followed by drying in
  • the additional film processing methods is employed to enhance the phase stability of the as- synthesized perovskite films.
  • 500 of diethyl ether are dropped on the spinning substrate after 10 s to improve the film morphology.
  • the films are dried inside a N 2 glovebox on a hot plate at a temperature of 70°C for 1 minute.
  • the films are then annealed in an oven in an air atmosphere at 185°C for 90 minutes.
  • the electron-blocking layer 34 is with a 96mg/ml of spiro-OMeTAD solution in chlorobenzene with additives of 32 ⁇ of Li-TFSi (170 mg/ml 1-butanol solution) and 10 ⁇ of 4-tertbutylpyridine per 1 ml of spiro-OMeTAD solution.
  • Spin-coating is carried out in a nitrogen-filled glovebox at 2000 rpm for 60 s.
  • a 120 nm silver electrode is thermally evaporated under vacuum of 3 ⁇ 4 10 _1 Torr, at a rate of 3 ⁇ 4 0.2 nm-s -1 .
  • Hybrid perovskites are intrinsically complex materials, where the presence of various types of interactions and structural disorder may play an important role in the material properties. Ex-situ and in-situ measurements, such as UV vis, X-ray diffraction, vibrational
  • spectroscopy spectroscopic ellipsometry and X-ray absorption spectroscopy (XAS) are essential techniques for studying optical properties, structure and phase
  • the carrier lifetime of as-prepared perovskite materials is studied by monitoring time-resolved photoluminescence (TRPL) measurements.
  • TRPL time-resolved photoluminescence
  • the influence of ion hybridization on carrier lifetime and ion migration in the fabricated devices are studied using impedance spectroscopy and novel charge transport measurement techniques, such as
  • IPC incident photo-current
  • FIG 4 there is shown a simulated J-V plot for the device described above and shown in figure 3 at room temperature .
  • the current-voltage (I-V) graph is simulated using the standard single diode equation for the solar cell.
  • the curves are extrapolated with theoretically calculated short circuit current density and open circuit voltage with the low series resistance and high shunt resistance values of the typical perovskite solar cell under 1 sun at AMI .5 condition and room temperature ⁇ 25°C. - I n ⁇ stability testing.
  • the accelerated moisture-tolerance tests for perovskite materials is performed by monitoring the reflection of the corresponding perovskite films in air with 95% relative humidity at room temperature using an experimental tool developed by the Applicants.
  • FIG 5 there is shown a simulated aging trend for 500 h of a high performance dual-ion hybrid perovskite device at room temperature under constant illumination and maximum power point tracking. A trend for the existing conventional perovskite is also shown for comparison .
  • FIG. 6 there is shown a schematic view of the doping process of the Electron Transport Layer and the perovskite device structure employing triple cation based perovskite as light absorbing layer.
  • Figure 6(c) shows the J-V curve for the device with a ZnO layer.
  • Rb is used as alternative to Cs .
  • Rb has shown promising stability figures.
  • the Applicants have performed Lithium (Li) doping of a low-temperature processed zinc oxide (ZnO) electron transport layer (ETL) for highly efficient, triple-cation- based MAo. 57 FA 0 . 38 Rbo.o 5 Pb ⁇ 3 (MA: methylammonium, FA:
  • PSCs PLCs
  • Lithium intercalation in the host ZnO lattice structure is dominated by interstitial doping phenomena, which passivates the intrinsic defects in ZnO film.
  • interstitial Li doping also downshifts the Fermi energy position of Li doped ETL by 30 meV, which
  • the power conversion efficiency (PCE) of the PSCs incorporating lithium-doped ZnO (Li-doped) is raised from 14.07 to 16.14%.
  • the superior performance is attributed to the reduced current leakage, enhanced charge extraction characteristics, and mitigated trap-assisted recombination phenomena in Li-doped devices, thoroughly investigated by means of electrochemical impedance
  • Li-doped PSCs also exhibit lower photocurrent hysteresis than ZnO devices, which is investigated with regard to the electrode polarization phenomena of the fabricated devices.
  • Figure 6(c) represents the J-V characteristics of PSCs at the scan rate of 0.05 V/s employing triple-cation perovskite with Li-Doped ZnO as electron transport layer.
  • the PCE of the best device in the FB-SC scan (forward bias to short circuit) is 16.14% with a Voc of 1026.26 mV, Jsc of 22.22 mA/cm 2 , and fill factor of 70.77%.
  • the J-V scan performed in the reverse direction SC-FB (short circuit to forward bias) has slightly lower PCE of about 13.15% with a with a Voc of 940.94 mV, Jsc of 22.04 mA/cm 2 , and fill factor of 63.38%.
  • the difference in the PCE values arising from the scan direction is attributed to the hysteresis phenomenon.
  • FIG. 7 is a schematic representation of fabricated PSCs (CA device and CC device) (a) and J-V curves (both FB-SC and SC-FB direction at 0.05 V/s) of the best performing CC device (b) and CA device (c) .
  • CA ETL demonstrates a 50 meV upshift in Fermi level position with respect to CC ETL, contributing to higher n- type conductivity and lower electron injection barrier at the interface.
  • the PCE of the best device CA in the FB-SC scan is 16.45% with a Voc of 1012.96 mV, Jsc of 23.61 mA/cm 2 , and fill factor of 68.79%.
  • the J-V scan performed in the reverse direction SC-FB has slightly lower PCE of about 12.58% with a with a Voc of 930.47 mV, Jsc of 23.76 mA/cm 2 , and fill factor of 56.89%.
  • the difference in the measured photovoltaic parameters is attributed to hysteresis phenomenon arising due to the interfacial polarization issues existing at the perovskite/ZnO layer interface .
  • the PCE of the best device CC in the FB-SC scan is only 10.01% with a Voc of 804.02 mV, Jsc of 22.25 mA/cm 2 , and fill factor of 55.84%.
  • the CA devices demonstrate about 82% higher average PCE (CA PSC: 15.14%, CC PSCs: 8.33%) compared to CC devices .
  • CA devices Apart from the higher photovoltaic performance, CA devices also show mitigated photo-current hysteresis phenomena compared to CC devices, which have been found to be correlated with suppressed electrode polarization phenomena in larger grain sized perovskite atop CA ETL.
  • the term "comprising” (and its grammatical variations) as used herein are used in the inclusive sense of “having” or “including” and not in the sense of "consisting only of”.

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Abstract

La présente invention concerne des matériaux de pérovskite de formule ABX 3 , formés par hybridation d'ion simultanée par l'intermédiaire d'une hybridation de cation de site A (métallo-organique) et d'hybridation d'anion de site X (halogénure-pseudohalogénure), ainsi que l'utilisation de ceux-ci dans des dispositifs photovoltaïques à base de pérovskite hybride stable. Dans des modes de réalisation préférés, l'hybridation de cations de site A est réalisée par hybridation d'un ion formamidinium (FA + ) avec soit un ion césium (Cs + ) soit un ion rubidium (Rb + ), l'hybridation d'anion de site X est réalisée par hybridation soit d'un ion iodure (I''), soit d'un ion bromure (Br "), soit d'un ion chlorure (CI")) avec soit un ion thiocyanate (SCN "), soit un ion sélénocyanate (SeCN") soit un ion cyanate (OCN "). Dans des modes de réalisation, le cation B est choisi comme devant être Pb 2 + . L'invention concerne en outre des dispositifs photovoltaïques comprenant : un substrat ; une couche de transport d'électrons ; une couche d'absorption de lumière comprenant le matériau de pérovskite de la présente invention ; une couche de transport de trous ; et un agencement de contact.
PCT/AU2017/051114 2016-10-13 2017-10-13 Procédé de formation d'une couche de pérovskite absorbant la lumière, destinée à une cellule photovoltaïque et cellule photovoltaïque comprenant la couche de pérovskite absorbant la lumière Ceased WO2018068101A1 (fr)

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AU2016904157 2016-10-13
AU2016904157A AU2016904157A0 (en) 2016-10-13 A method of forming a light absorbing layer for a photovoltaic cell and a photovoltaic cell comprising the light-absorbing layer

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WO2020248063A1 (fr) * 2019-06-12 2020-12-17 Asuo Ivy Mawusi Matériaux pérovskite à cation mixte dopé et dispositifs les exploitant
RU2764711C1 (ru) * 2021-06-17 2022-01-19 Автономная некоммерческая образовательная организация высшего образования "Сколковский институт науки и технологий" (Сколковский институт науки и технологий) Электрон-селективный слой на основе оксида индия, легированного алюминием, способ его изготовления и фотовольтаическое устройство на его основе
CN114975989A (zh) * 2021-02-23 2022-08-30 香港科技大学 无铅钙钛矿电极及包含该电极的锂离子电池
CN117684248A (zh) * 2023-11-21 2024-03-12 浙江大学 一种透气柔性容器促进钙钛矿单晶生长的方法、x射线探测器
CN118382304A (zh) * 2024-04-30 2024-07-23 深圳现象光伏科技有限公司 宽带隙钙钛矿太阳能电池及叠层电池、用电装置

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