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WO2017135430A1 - Structure plasmonique, structure de génération de couleur, et support d'enregistrement - Google Patents

Structure plasmonique, structure de génération de couleur, et support d'enregistrement Download PDF

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Publication number
WO2017135430A1
WO2017135430A1 PCT/JP2017/004040 JP2017004040W WO2017135430A1 WO 2017135430 A1 WO2017135430 A1 WO 2017135430A1 JP 2017004040 W JP2017004040 W JP 2017004040W WO 2017135430 A1 WO2017135430 A1 WO 2017135430A1
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WIPO (PCT)
Prior art keywords
dielectric layer
nanodisk
color
protrusion
metal
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PCT/JP2017/004040
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English (en)
Japanese (ja)
Inventor
淳一 ▲高▼原
将司 宮田
英明 畠田
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Dai Nippon Printing Co Ltd
University of Osaka NUC
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Dai Nippon Printing Co Ltd
Osaka University NUC
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Priority to JP2017565660A priority Critical patent/JP6371923B2/ja
Publication of WO2017135430A1 publication Critical patent/WO2017135430A1/fr
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/26—Reflecting filters

Definitions

  • the present invention relates to a plasmonic structure, a color generation structure, and a recording medium.
  • Patent Document 1 and Non-Patent Document 1 disclose a printing technique in which four elongated cylindrical nanostructures are set as one set (pixel) and a desired color is generated for each set. According to this printing technique, colors can be individually generated by diffraction limited pixels (250 nm square to 300 nm square in the visible wavelength region). This feature makes it possible to improve the print resolution up to 100,000 dpi.
  • Patent Document 1 in order to generate a specific color, the diameter and interval of four columnar nanostructures constituting one pixel are controlled, and plasmon The wavelength of light confined by absorption is determined. For this reason, a complicated design was required.
  • an object of the present invention is to provide a plasmonic structure capable of plasmon absorption of light having a specific wavelength without requiring a complicated design.
  • Another object of the present invention is to provide a color generation structure capable of generating a specific color without requiring a complicated design, and a recording medium using the color generation structure.
  • the plasmonic structure according to the present invention includes a reflective surface, a dielectric layer, and at least one protrusion.
  • the dielectric layer is laminated on the reflective surface.
  • the protrusion is disposed on the dielectric layer. Inducing the surface plasmon resonance at the interface between the protrusion and the dielectric layer, and so that the light of a specific wavelength band is plasmon absorbed at the interface, the reflective surface, the dielectric layer and the material of the protrusion, The thickness of the dielectric layer, the height and shape of the protrusions, and the size of the interface are controlled.
  • the height and shape of the protrusion and the size of the interface are controlled.
  • the protrusion includes a plurality of types of protrusions having different sizes of the interface with the dielectric layer. At each interface between each of the plurality of types of protrusions and the dielectric layer, plasmon absorption of light in a specific wavelength band corresponding to the size of each interface is performed.
  • the reflecting surface and the protrusion each include a metal.
  • the color generating structure according to the present invention includes a metal reflection layer, a dielectric layer, and at least one metal protrusion.
  • the dielectric layer is laminated on the metal reflective layer.
  • the metal protrusion is disposed on the dielectric layer. Surface plasmon resonance is induced at the interface between the metal protrusion and the dielectric layer, and a specific color is generated.
  • the metal protrusion includes a plurality of types of metal protrusions having different sizes of the interface with the dielectric layer.
  • different colors are generated by the plurality of types of metal protrusions.
  • the plurality of types of metal protrusions are arranged close to each other.
  • the plurality of types of metal protrusions generate a black color.
  • color mixing occurs due to the plurality of types of metal protrusions.
  • the plurality of types of metal protrusions are arranged in a region having an area greater than 0 and not more than 400 nm square.
  • the recording medium according to the present invention includes the above color generation structure.
  • the recording medium further includes a protective layer for protecting the metal protrusion.
  • the plasmonic structure according to the present invention it is possible to plasmon-absorb light having a specific wavelength without requiring a complicated design.
  • the color generation structure according to the present invention it is possible to generate a specific color without requiring a complicated design.
  • FIG. 1 is a cross-sectional view showing a plasmonic structure 100 according to the present embodiment.
  • FIG. 2 is a plan view showing the plasmonic structure 100 according to the present embodiment.
  • the plasmonic structure 100 includes a nanodisk 101 (an example of a protrusion), a dielectric layer 102, and a base layer 103.
  • the nanodisk 101 is disposed on the dielectric layer 102.
  • the dielectric layer 102 is stacked on the base layer 103.
  • the surface 104 on the dielectric layer 102 side of the base layer 103 constitutes a reflective surface.
  • the surface 104 is referred to as a reflective surface 104.
  • the base layer 103 is stacked on the substrate 105.
  • the material of the nanodisk 101, the dielectric layer 102 and the base layer 103 (that is, the reflective surface 104), the height of the nanodisk 101, the thickness of the dielectric layer 102, and the interface 106 between the nanodisk 101 and the dielectric layer 102
  • the size is controlled to satisfy a predetermined condition.
  • the predetermined condition is that light in a specific wavelength band is plasmon-absorbed at the interface 106 between the nanodisk 101 and the dielectric layer 102.
  • Light in a specific wavelength band is irradiated with light (for example, non-polarized white light) on the plasmonic structure 100 to induce surface plasmon resonance at the interface 106 between the nanodisk 101 and the dielectric layer 102. Absorbed, plasmon.
  • the predetermined condition is referred to as plasmon absorption condition.
  • the nanodisk 101 is cylindrical. Therefore, the size of the interface 106 between the nanodisk 101 and the dielectric layer 102 depends on the diameter of the nanodisk 101.
  • the material, height, and diameter of the nanodisk 101 are not particularly limited as long as the plasmon absorption condition is satisfied.
  • Examples of the material of the nanodisk 101 include aluminum, a metal such as gold, silver, copper, sodium, potassium, indium, and rubidium, indium tin oxide (ITO), and aluminum dope. Either a semiconductor or a metal oxide such as zinc oxide (Aluminum doped Zinc Oxide; AZO) or gallium doped zinc oxide (GZO) may be employed.
  • the height of the nanodisk 101 is, for example, 10 nm to 500 nm, and the diameter of the nanodisk 101 is, for example, 20 nm to 300 nm.
  • the material and thickness of the dielectric layer 102 are not particularly limited as long as the plasmon absorption condition is satisfied.
  • a material of the dielectric layer 102 for example, aluminum oxide (so-called alumina), quartz, glass, indium tin oxide (ITO), magnesium fluoride, or calcium fluoride can be employed.
  • the thickness of the dielectric layer 102 is, for example, 5 nm or more and 100 nm or less.
  • the material of the base layer 103 is not particularly limited as long as the plasmon absorption condition is satisfied.
  • Examples of the material of the base layer 103 include aluminum, metal such as gold, silver, copper, sodium, potassium, indium, and rubidium, indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), or Either a semiconductor such as gallium doped zinc oxide (GZO) or a metal oxide may be employed.
  • metal such as gold, silver, copper, sodium, potassium, indium, and rubidium
  • ITO indium tin oxide
  • AZO aluminum-doped zinc oxide
  • GZO gallium doped zinc oxide
  • the material of the substrate 105 is not particularly limited as long as the base layer 103 can be stacked on the substrate 105.
  • the material of the substrate 105 for example, any of silicon, quartz, glass, metal, semiconductor, polymer, carbon material, or paper can be adopted.
  • FIG. 3 is a diagram showing a simulation result of the light absorption cross section at each light wavelength when the diameter d of the nanodisk 101 is changed.
  • FIG. 4A is a diagram showing a simulation result of electric field distribution in the vicinity of the nanodisk 101 when irradiated with light having a wavelength of 370 nm.
  • FIG. 4B is a diagram showing a simulation result of the electric field distribution in the vicinity of the nanodisk 101 when irradiated with light having a wavelength of 815 nm.
  • the material of the nanodisk 101 was set to aluminum, and the height of the nanodisk 101 was set to 40 nm.
  • the material of the dielectric layer 102 was set to alumina, and the thickness of the dielectric layer 102 was set to 30 nm.
  • the material of the base layer 103 was set to aluminum, and the thickness of the base layer 103 was set to 100 nm.
  • the diameter d of the nanodisk 101 was set to 160 nm.
  • COMSOL Multiphysics was used. That is, simulation based on the three-dimensional finite element method was executed. In each simulation, the dielectric constant of aluminum obtained by linear interpolation of experimental data was used.
  • the vertical axis represents the diameter d (nm) of the nanodisk 101
  • the horizontal axis represents the light wavelength (nm).
  • FIG. 3 shows that the lighter the region (the lighter the region or the lighter the region), the greater (stronger) the light absorption. In other words, it indicates that a drop in reflectance (dip) occurs in the reflection spectrum.
  • the diameter d of the nanodisk 101 is changed from 50 nm to 300 nm, two bright band-like regions (light absorption regions) are generated. Both of the two light absorption regions shift to the infrared region side as the diameter d of the nanodisk 101 increases.
  • FIG. 3 shows plasmon absorption characteristics (decrease in reflectivity) in the visible wavelength region (visible light region), but the plasmonic structure 100 can be obtained by controlling the diameter d of the nanodisk 101 to obtain infrared light. Even in the region or the ultraviolet region, the reflectance in a specific wavelength band can be lowered.
  • the electric field distribution shown in FIG. 4A corresponds to the point A shown in FIG.
  • the electric field distribution shown in FIG. 4B corresponds to the point B shown in FIG. 4A and 4B show that the brighter region (the lighter shade region or the lighter concentration region) has a stronger electric field.
  • the electric field distribution standardized by the incident electric field
  • FIG. 4A when light having a wavelength of 370 nm is irradiated, third-order standing wave resonance is excited with respect to the surface plasmon in the dielectric layer 102 (alumina layer).
  • FIG. 4B when light having a wavelength of 815 nm is irradiated, first-order standing wave resonance is excited with respect to the surface plasmon in the dielectric layer 102 (alumina layer).
  • the resonance condition can be determined by the diameter d of the single nanodisk 101 (substantial cavity length with respect to the standing wave).
  • the diameter d of the nanodisk 101 by controlling the diameter d of the nanodisk 101, light in a specific wavelength band can be confined at the interface 106 between the nanodisk 101 and the dielectric layer 102. Therefore, by controlling the diameter d of the nanodisk 101, surface plasmon resonance can be induced at the interface 106 between the nanodisk 101 and the dielectric layer 102, and light in a specific wavelength band can be absorbed.
  • the wavelength of light confined at the interface 106 between the single nanodisk 101 and the dielectric layer 102 is not limited to the diameter d of the nanodisk 101, but the material of the nanodisk 101, the dielectric layer 102 and the base layer 103, It also depends on the parameters of the height of the disk 101 and the thickness of the dielectric layer 102. Therefore, by controlling any one of the material of the nanodisk 101, the dielectric layer 102 and the base layer 103, the height of the nanodisk 101, and the thickness of the dielectric layer 102, light in a specific wavelength band is absorbed by plasmons. can do.
  • two light absorption regions can be generated by a single nanodisk 101.
  • a single spectral peak can be generated in the reflection spectrum. Therefore, by controlling each parameter such as the diameter d of the nanodisk 101, a single spectral peak can be generated in the reflection spectrum in the visible wavelength region.
  • a specific color can be generated by a single nanodisk 101. Therefore, various primary colors can be generated with high color purity and high saturation.
  • the plasmonic structure 100 according to the present embodiment can constitute a color generation structure that generates a specific color. Specifically, color generation is achieved by lowering the reflectance of a specific wavelength band in the reflection spectrum in the visible wavelength region.
  • the plasmonic structure 100 described with reference to FIGS. 1 and 2 includes one nanodisk 101, but the plasmonic structure 100 may include a plurality of nanodisks 101. Therefore, the plasmonic structure 100 (color generation structure) according to the present embodiment can also constitute a recording medium such as a printed material. That is, the plasmonic structure 100 becomes a recording medium by arranging a plurality of nanodisks 101 on the dielectric layer 102 so that a desired image is formed. Alternatively, a recording medium can be configured by arranging a plurality of plasmonic structures 100 including one nanodisk 101.
  • each of the plurality of nanodisks 101 plasmon absorption of light in a specific wavelength band corresponding to each diameter d is performed at each interface 106 between each nanodisk 101 and the dielectric layer 102.
  • different colors can be generated from the plasmonic structure 100 including the plurality of nanodisks 101.
  • a plurality of plasmonic structures 100 including one nanodisk 101 can be arranged to generate different colors from each plasmonic structure 100.
  • the single nanodisk 101 can function as a single color element.
  • the light absorption cross-sectional area can exceed the structural cross-sectional area of the nanodisk 101.
  • the diameter d of the nanodisk 101 is 200 nm
  • the light absorption cross-sectional area exceeds the structural cross-sectional area (0.314 ⁇ 10 5 nm 2 ), and the 300 nm square sub-wavelength pixel which is the diffraction limit of light.
  • the size is the same as the area (0.9 ⁇ 10 5 nm 2 ). Therefore, by setting the diameter d of the nanodisk 101 to 200 nm or more, one pixel can be configured using one nanodisk 101 to form an image.
  • the diameter d of the nanodisk 101 is less than 200 nm
  • one pixel may be configured using a plurality of nanodisks 101.
  • the manufacturing method of the plasmonic structure 100 is not particularly limited. For example, it can be manufactured using an electron beam lithography method or a nanoimprint method. Below, the method to manufacture the plasmonic structure 100 using an electron beam lithography method is demonstrated.
  • FIG. 5A to 5D are diagrams showing an outline of a manufacturing process of the plasmonic structure 100.
  • a plurality of aluminum nanodisks 101a are formed on an aluminum film 103a (base layer 103) whose surface is covered with an alumina thin film 102a (dielectric layer 102). Shows the process.
  • an aluminum film 103a whose surface is covered with an alumina thin film 102a is deposited on a silicon substrate 105a by electron beam evaporation.
  • the positive resist film 301 is spin-coated on the alumina thin film 102a
  • the positive resist film 301 is patterned by electron beam lithography.
  • an aluminum thin film 101b is deposited by resistance heating vapor deposition.
  • the nano-disk 101a made of aluminum is formed by lifting off the positive resist film 301 in an acetone bath.
  • the first embodiment has been described above. According to the present embodiment, it is possible to plasmon-absorb light having a specific wavelength without requiring a complicated design. Further, according to the present embodiment, it is possible to generate a specific color without requiring a complicated design. That is, one of the parameters of the nanodisk 101, the dielectric layer 102 and the base layer 103 (ie, the reflective surface 104), the height and diameter of the nanodisk 101, and the thickness of the dielectric layer 102 is controlled. By doing so, the light of a specific wavelength can be plasmon-absorbed. Similarly, a specific color can be generated by controlling one of each parameter.
  • aluminum can be used. Therefore, durability and stability can be improved. Further, the cost can be reduced.
  • the protrusions disposed on the dielectric layer 102 are not limited to the cylindrical nanodisk 101.
  • the shape of the protrusion may be a shape that satisfies the plasmon absorption condition, and may be, for example, an elliptic cylinder.
  • the shape of the protrusion may be a polygonal column shape such as a triangular column shape or a quadrangular column shape, or a star column shape such as a pentagonal star column shape or a hexagonal star column shape.
  • the shape of the protrusion may be a cone shape such as a cone shape or a triangular pyramid shape.
  • the shape of the protrusion may be a drop shape or a barrel shape.
  • Embodiment 2 Next, Embodiment 2 will be described. However, items different from the first embodiment will be described, and descriptions of the same items as the first embodiment will be omitted.
  • the second embodiment differs from the first embodiment in that the plasmonic structure 100 generates a black color.
  • the wavelength of light that is absorbed by plasmons can be changed. Therefore, by arranging a plurality of types of nanodisks 101 having different diameters d close to each other, the reflectivity of a plurality of wavelength bands can be lowered in a region where they are arranged. For example, two or more types of nanodisks 101 are arranged in a minute region (for example, in a region having an area larger than 0 and less than 400 nm square) so as not to protrude from the minute region and to contact each other. Thus, the reflectance of a plurality of wavelength bands can be reduced.
  • a region where a black color is generated may be referred to as a black pixel.
  • FIG. 6A is a plan view showing the plasmonic structure 100 according to the present embodiment.
  • the plasmonic structure 100 (color generation structure) according to this embodiment includes four nanodisks 101.
  • the four nanodisks 101 are arranged close to each other to form a unit (an example of a protruding unit).
  • the four nanodisks 101 are arranged corresponding to the respective corners of the rectangular region 601.
  • the rectangular area 601 is a black pixel.
  • the rectangular area 601 is, for example, a square area.
  • the rectangular region 601 may have an area greater than 0 and less than 400 nm square.
  • the rectangular region 601 can be a subwavelength pixel.
  • the rectangular region 601 can be a diffraction limited pixel.
  • the sub-wavelength pixel has an area of, for example, 50 nm square or more and less than 400 nm square.
  • the four nanodisks 101 include two first nanodisks 201, a second nanodisk 202, and a third nanodisk 203.
  • the two first nanodisks 201 face each other in the diagonal direction of the rectangular region 601.
  • the second nanodisk 202 and the third nanodisk 203 oppose each other in the other diagonal direction of the rectangular region 601.
  • the first nanodisk 201, the second nanodisk 202, and the third nanodisk 203 have different diameters. Specifically, the diameter d1 of the first nanodisk 201 is smaller than the diameter d2 of the second nanodisk 202, and the diameter d2 of the second nanodisk 202 is smaller than the diameter d3 of the third nanodisk 203.
  • the diameters d1 to d3 are set so that the resonating wavelengths (that is, wavelengths that are spectrally absorbed) in each of the first nanodisk 201 to the third nanodisk 203 do not overlap.
  • FIG. 6B is a diagram showing simulation results of reflection spectra of three types of black pixels.
  • the vertical axis represents the reflectance
  • the horizontal axis represents the light wavelength (nm).
  • the solid line indicates the simulation result of the reflection spectrum of the first black pixel
  • the alternate long and short dash line indicates the simulation result of the reflection spectrum of the second black pixel
  • the alternate long and two short dashes line indicates the simulation result of the reflection spectrum of the third black pixel.
  • the broken line along the vertical axis indicates the position (wavelength) of the reflectance dip (dip) in each reflection spectrum. In other words, the resonance wavelength (wavelength that is strongly absorbed) is shown.
  • the size of the black pixel was set to 300 nm ⁇ 300 nm.
  • the other conditions such as the material of the nanodisk 101 were the same as those in the simulation described with reference to FIG.
  • the reflection spectrum of the black pixel can be adjusted by controlling the diameter d of the nanodisk 101 constituting the black pixel.
  • the embodiment 2 has been described above. According to the present embodiment, it is possible to generate a black color without requiring a complicated design. That is, a black color can be generated by controlling the diameter d of each of the plurality of nanodisks 101 arranged close to each other.
  • Embodiment 3 Next, Embodiment 3 will be described. However, matters different from the first embodiment and the second embodiment will be described, and description of the same matters as the first embodiment and the second embodiment will be omitted.
  • the third embodiment is different from the first and second embodiments in that the nanodisk 101 has an elliptic cylinder shape.
  • FIG. 7 is a plan view showing the plasmonic structure 100 according to the present embodiment.
  • the plasmonic structure 100 according to this embodiment includes an elliptical columnar nanodisk 101.
  • the elliptical columnar nanodisk 101 has a first axis a and a second axis b.
  • FIGS. 8 to 11 are diagrams showing simulation results of the reflection spectrum of the plasmonic structure 100 according to the present embodiment. Specifically, FIGS. 8 to 11 show reflection spectra for x-polarized light and y-polarized light that are orthogonal to each other. In the simulation according to the present embodiment, the polarization direction of x-polarized light (direction of the electric field vector E) with respect to the elliptical columnar nanodisk 101 is the direction indicated by the dashed arrow in FIG. 7 and is parallel to the first axis a.
  • the polarization direction of y-polarized light (direction of the electric field vector E) with respect to the elliptical columnar nanodisk 101 is the direction indicated by the solid line arrow in FIG. 7 and is parallel to the second axis b.
  • FIG. 8 shows a reflection spectrum obtained by setting the second axis b to 100 nm.
  • FIG. 9 shows a reflection spectrum obtained by setting the second axis b to 140 nm. That is, FIG. 9 shows a simulation result of the plasmonic structure 100 including the columnar nanodisk 101.
  • FIG. 10 shows a reflection spectrum obtained by setting the second axis b to 180 nm.
  • FIG. 11 shows a reflection spectrum obtained by setting the second axis b to 220 nm.
  • 12A to 12D are plan views showing the nanodisks 101 set in the simulations shown in FIGS. 8 to 11, respectively. The other conditions such as the material of the nanodisk 101 were the same as those in the simulation described with reference to FIG.
  • the vertical axis indicates the reflectance
  • the horizontal axis indicates the light wavelength (nm).
  • a solid line indicates a reflection spectrum for y-polarized light
  • a broken line indicates a reflection spectrum for x-polarized light.
  • the embodiment 3 has been described above. According to the present embodiment, by making the nanodisk 101 an asymmetrical shape such as an elliptic cylinder, the reflection characteristics can be polarized. This enables high-density optical data storage and stereoscopic color printing.
  • Embodiment 4 Next, Embodiment 4 will be described. However, items different from the first to third embodiments will be described, and descriptions of the same items as the first to third embodiments will be omitted.
  • the fourth embodiment is different from the first to third embodiments in that the plasmonic structure 100 includes a protective layer.
  • FIG. 13 is a cross-sectional view showing the plasmonic structure 100 according to the present embodiment.
  • the plasmonic structure 100 may further include a protective layer 107 that protects the nanodisk 101.
  • the material and thickness of the protective layer 107 are not particularly limited as long as the plasmon absorption condition described in Embodiment 1 is satisfied.
  • a polymer such as an electron beam resist polymer can be adopted as the material of the protective layer 107.
  • the thickness of the protective layer 107 may be 50 nm or more and 1000 nm or less.
  • the nanodisk 101 can be mechanically and chemically protected by the protective layer 107. Therefore, durability of the plasmonic structure 100 can be improved.
  • the black pixel is configured using three types of nanodisks 101 having different diameters d, but the present invention is not limited to this. That is, as long as a black color can be generated, two types of nanodisks 101 having different diameters d may be used, or four or more types of nanodisks 101 having different diameters d may be used.
  • the black pixels are configured by using the four nanodisks 101, but the present invention is not limited to this. That is, as long as a black color can be generated, two nanodisks 101 may be used, or four or more nanodisks 101 may be used.
  • the shape of the black pixel is rectangular, but the shape of the black pixel is not particularly limited, and may be a polygon such as a triangle or a pentagon. Alternatively, the shape of the black pixel may be a circle or a star.
  • the plasmonic structure was manufactured by the manufacturing method using the electron beam lithography method described with reference to FIGS. 5A to 5D.
  • a cylindrical aluminum nanodisk (height 40 nm) was formed on an aluminum film (film thickness 100 nm) whose surface was covered with an alumina thin film (film thickness 30 nm).
  • the diameter of the nanodisk was controlled to a size capable of generating a color (including a black color).
  • a 150 nm-thick positive resist manufactured by Nippon Zeon Co., Ltd., ZEP520A
  • ELS-7700T manufactured by Elionix Co., Ltd. was used for electron beam lithography.
  • aluminum having a thickness of 40 nm was deposited by resistance heating vapor deposition.
  • FIG. 14 is a schematic diagram showing an experimental apparatus 1100 according to an embodiment of the present invention.
  • a confocal microscope connected with a CCD color camera 1101 (Nikon Corporation, DS-Fi1) and a spectrometer 1102 (Ocean Optics Inc., QE65 Pro) for bright-field imaging.
  • CCD color camera 1101 Nakon Corporation, DS-Fi1
  • spectrometer 1102 Ocean Optics Inc., QE65 Pro
  • Unpolarized white light L1 from a halogen lamp (100 W) was applied to the sample S (plasmonic structure) via the objective lens 1103.
  • the objective lens 1103 includes a 20 ⁇ magnification and a 0.45 numerical aperture reflection measurement objective lens (Nikon Corporation, Tu Plan ⁇ Fuor BD), or a 150 ⁇ magnification, numerical aperture 0.9 objective lens (stock) Nikon Co., Ltd., TupPlan Apo BD) was used.
  • the reflection measurement objective lens was used for spectrum measurement and color image capturing.
  • the resolution test objective lens was used to test the pixel resolution.
  • the reflected light L2 from the sample S was recorded by the CCD color camera 1101 for bright field image photography or the spectrometer 1102 via the objective lens 1103 and the confocal optical system 1104 for spectrum measurement.
  • the spectrum was corrected with the reflection spectrum of white light from a standard silver mirror.
  • FIG. 15 is a diagram showing an example of an SEM image of the plasmonic structure according to the embodiment of the present invention. That is, FIG. 15 shows an image taken using a scanning electron microscope (SEM). The diameter of the nanodisk 101 shown in FIG. 15 is 80 nm. Further, the nanodisks 101 shown in FIG. 15 are arranged with a period (pitch) of 300 nm. Note that the scale bar shown in FIG. 15 indicates 200 nm.
  • SEM scanning electron microscope
  • the nanodisk according to the embodiment of the present invention is made of aluminum, long-term color resistance is expected.
  • the plasmonic structure shown in FIG. 15 showed no signs of fading for at least 3 months. This indicates that the color resistance is excellent.
  • FIG. 16 to FIG. 23 are diagrams showing experimental results of reflection spectra of plasmonic structures according to Examples 1 to 8.
  • the period P of the nanodisk 101 was set to 300 nm.
  • the diameter d of the nanodisk 101 was set to 80 nm.
  • the diameter d of the nanodisk 101 was set to 100 nm.
  • the diameter d of the nanodisk 101 was set to 120 nm.
  • the diameter d of the nanodisk 101 was set to 140 nm.
  • the diameter d of the nanodisk 101 was set to 160 nm.
  • Example 6 the diameter d of the nanodisk 101 was set to 180 nm.
  • the diameter d of the nanodisk 101 was set to 200 nm.
  • the diameter d of the nanodisk 101 was set to 220 nm.
  • the vertical axis indicates the reflectance
  • the horizontal axis indicates the light wavelength (nm).
  • a solid line shows an experimental result (measured value)
  • a broken line shows a simulation result (simulated value).
  • RCWA rigorous coupled wave analysis
  • a single spectrum peak could be generated in the reflection spectrum in the visible wavelength region. Further, the position (wavelength) of the spectrum peak could be changed by changing the diameter d of the nanodisk 101. Therefore, the hue generated by the plasmonic structure (nanodisk array structure) greatly depends on the diameter d of the nanodisk 101. Note that the reflectance was less than 25% at the position indicated by the triangular mark (the position of the deep depression).
  • FIG. 24 is a diagram showing a simulation result (two-dimensional reflectivity map) of reflectance calculated by changing the incident angle ⁇ of p-polarized light
  • FIG. 25 is a diagram showing the incident angle ⁇ of p-polarized light
  • FIG. 26 is a diagram showing a simulation result (two-dimensional reflectivity map) of reflectance calculated by changing the incident angle ⁇ of s-polarized light
  • FIG. 27 is a diagram showing the incident angle ⁇ of s-polarized light.
  • the diameter d of the nanodisk 101 was set to 140 nm, and the period P was set to 300 nm. As shown in FIG.
  • the direction of the p-polarized electric field vector E with respect to the nanodisk 101 is perpendicular to the light incident direction indicated by the arrow k, and the light incident surface (parallel to the paper surface). Direction parallel to the surface.
  • the direction of the p-polarized magnetic field vector H with respect to the nanodisk 101 is perpendicular to the light incident direction indicated by the arrow k and is perpendicular to the light incident surface.
  • the direction of the electric field vector E of s-polarized light with respect to the nanodisk 101 is perpendicular to the light incident direction indicated by the arrow k, and the light incident surface Direction perpendicular to the surface.
  • the direction of the s-polarized magnetic field vector H with respect to the nanodisk 101 is a direction perpendicular to the light incident direction indicated by the arrow k and parallel to the light incident surface.
  • the vertical axis represents the incident angle ⁇ (°), and the horizontal axis represents the light wavelength (nm).
  • a region indicated by hatching indicates that the reflectance is particularly low. In other words, the area indicated by hatching is an area where a recess having a deep reflectance occurs in the reflection spectrum.
  • FIG. 28A is a diagram illustrating optical images of plasmonic structures according to Examples 9 to 12. That is, an image observed using an optical microscope is shown. Specifically, FIG. 28A shows optical images of Examples 9, 10, 11, and 12 in order from the left.
  • the diameter of the nanodisk 101 was set to 80 nm.
  • the period P of the nanodisk 101 is set to 260 nm
  • the period P of the nanodisk 101 is set to 300 nm
  • Example 11 the period P of the nanodisk 101 is set to 340 nm.
  • the period P of the nanodisk 101 was set to 380 nm.
  • the hue was maintained even when the period P changed.
  • the period P changes the brightness of the color gradually changes.
  • FIG. 28B is a diagram showing experimental results (measured values) of reflection spectra of plasmonic structures according to Examples 9 to 12.
  • the vertical axis represents the reflectance
  • the horizontal axis represents the light wavelength (nm).
  • the broken line along the vertical axis indicates the position of the reflectivity depression.
  • the change in the period P had a slight effect on the depth of the indentation of the reflectance.
  • the change in the period P of the nanodisk 101 affected the brightness of the reflected light.
  • the position of the reflectance indentation was not affected by the change in the period P. This indicates that the optical interaction between the nanodisks 101 is very weak. That is, the optical resonance characteristics of each nanodisk 101 are maintained. Accordingly, each nanodisk 101 acts as a single color element that does not depend on periodicity.
  • FIG. 29A is a diagram illustrating an optical image of the checkerboard pattern according to the thirteenth embodiment. For taking an optical image, a resolution test objective lens having a magnification of 150 and a numerical aperture of 0.9 was used.
  • FIG. 29B is a diagram illustrating an SEM image of the checkerboard pattern according to Example 13. FIG. 29B shows an enlarged area surrounded by a broken line in FIG. 29A.
  • the checkerboard pattern could be clearly observed in the optical image. This indicates that a color can be generated for each nanodisk 101 even when the nanodisks 101 are arranged in sub-wavelength periods. Furthermore, considering that the diffraction limited optical microscope is used for imaging, it is shown that colors can be generated at the optical diffraction limit for each nanodisk 101. These results indicate that one nanodisk 101 acts as a single color element.
  • FIG. 30 is a diagram illustrating a two-dimensional reflectivity map according to the fourteenth embodiment. Specifically, FIG. 30 shows a simulation result of the reflectance calculated by changing the diameter d of the nanodisk 101. Specifically, the reflectivity map shown in FIG. 30 was created using RCWA simulation. The period P of the nanodisk 101 was set to 300 nm.
  • the vertical axis represents the diameter d (nm) of the nanodisk 101, and the horizontal axis represents the light wavelength (nm).
  • a broken line indicates a wavelength at which the reflectance is minimum at each diameter d.
  • circular marks and rhombus marks indicate measured values (experimental results) corresponding to broken lines. That is, the result of measuring the wavelength at which the reflectance is minimum at each diameter d is shown.
  • FIG. 30 shows that the darker the region (the darker the region), the greater (stronger) the light absorption. In other words, it indicates that a drop in reflectance (dip) occurs in the reflection spectrum.
  • the two-dimensional reflectivity map includes two black bands. Two black bands indicate that light of a specific wavelength band is absorbed in the visible wavelength region (400 nm to 800 nm). The experimental results were consistent with the simulation results.
  • FIG. 31 is a diagram in which the experimental results according to Example 14 are plotted in a CIE1931 chromaticity diagram.
  • a CIE light source D65 was used.
  • FIG. 31 shows that colors including saturated RGB colors can be achieved simply by fixing the period P of the nanodisk 101 to 300 nm and changing the diameter d of the nanodisk 101. This is advantageous for primary color generation with a diffraction limited constant resolution.
  • the nanodisk 101 has a light absorption cross-sectional area equal to or larger than the area of a certain small region (for example, an area larger than 0 and less than 400 nm square), the nanodisks 101 having different diameters d are mixed in the small region.
  • color mixing is possible and color expansion can be achieved.
  • color mixing is possible by arranging two or more nanodisks 101 having different diameters d close to each other.
  • two or more nanodisks 101 having different diameters d from each other in a minute region do not protrude from the minute region and do not touch each other.
  • a minute region for example, in a subwavelength pixel or in a diffraction limited pixel
  • FIG. 32A is a diagram illustrating an SEM image of the black pixel 1200 according to the fifteenth embodiment.
  • the black pixel 1200 according to the fifteenth embodiment includes four nanodisks 101. Specifically, in Example 15, two nanodisks 101 having a diameter of 80 nm (first nanodisk 201), a nanodisk 101 having a diameter of 100 nm (second nanodisk 202), and a nanodisk 101 having a diameter of 120 nm (first nanodisk 201).
  • a black pixel 1200 was fabricated in combination with 3 nanodisks 203). The size of the black pixel 1200 is 300 nm square (300 nm ⁇ 300 nm).
  • 32B is a diagram illustrating an optical image of the black pixel 1200 according to the fifteenth embodiment.
  • an objective lens for reflection measurement having a magnification of 20 and a numerical aperture of 0.45 was used.
  • a blackish color could be generated.
  • FIG. 33 is a diagram illustrating an experiment result of a reflection spectrum of the black pixel 1200 according to the fifteenth embodiment.
  • the vertical axis represents the reflectance
  • the horizontal axis represents the light wavelength (nm).
  • the solid line indicates the experimental result (measured value), and the broken line indicates the simulation result.
  • the arrow indicates the position (wavelength) of the reflectance indentation in the reflection spectrum.
  • an absorption rate of 60% or more could be obtained over a wide bandwidth.
  • the reflectivity in the visible wavelength region is reduced as a whole.
  • the reflectance of each wavelength in the visible wavelength region was 40% or less.
  • the reflectance of each wavelength in the visible wavelength region was 20% or more and 40% or less, and the difference in reflectance between the wavelengths in the visible wavelength region was reduced.
  • the reflectance spectrum in the visible wavelength region is substantially flat. This indicates that by controlling the diameter d of each nanodisk 101 included in the black pixel, the difference in reflectance of each wavelength in the visible wavelength region can be reduced to generate a black color.
  • the measured reflection spectrum quantitatively matched the simulation result. There is a slight difference between the experimental result and the simulation result. This difference is due to the variation in the shape of the manufactured nanodisk 101 and the size of the nanodisk 101 used in the experiment and the nanodisk 101 in the simulation. This is probably due to the difference. Further, the measured reflection spectrum includes three reflectance indentations. This indicates that the optical resonance characteristics of each nanodisk 101 are maintained even if the interval between the nanodisks 101 is narrow.
  • FIG. 34A is a diagram illustrating an optical image of a checkerboard pattern according to the fifteenth embodiment.
  • a resolution test objective lens having a magnification of 150 and a numerical aperture of 0.9 was used.
  • one pixel could generate a diffraction-limited black color.
  • FIG. 34B is a diagram illustrating an SEM image of the checkerboard pattern according to the fifteenth example, and shows an enlarged region surrounded by a broken line in FIG. 34A. As shown in FIG.
  • the checkerboard pattern according to Example 15 was manufactured using black pixels 1200 and white pixels 1201 on which the nanodisks 101 were not arranged.
  • the size of the black pixel 1200 and the white pixel 1201 is 300 nm square (300 nm ⁇ 300 nm), respectively.
  • FIG. 35A is a diagram illustrating an optical image of the recording medium 1300 according to the sixteenth embodiment.
  • a resolution test objective lens having a magnification of 150 and a numerical aperture of 0.9 was used.
  • the characters “N”, “a”, “n”, and “o” were recorded (printed).
  • the letter “N” was drawn using black pixels.
  • the size of each pixel is 300 nm square (300 nm ⁇ 300 nm).
  • the scale bar has a size of 2 ⁇ m.
  • FIG. 35B is an enlarged SEM image of a part of the recording medium 1300 according to the sixteenth embodiment. Specifically, the letter “N” is shown enlarged.
  • FIG. 35C is an enlarged SEM image of another part of the recording medium 1300 according to the sixteenth embodiment. Specifically, the letter “a” is shown enlarged.
  • the size of the scale bar is 500 nm.
  • FIG. 35A a microscope color image with a diffraction limit resolution could be produced. In other words, subwavelength color printing could be realized. Further, as shown in FIGS. 35A and 35C, one nanodisk 101 functions as one color element. This indicates that an intuitive design of a color print is possible, and the degree of freedom in designing a full-color subwavelength image / character is improved.
  • FIG. 36A is a diagram illustrating an SEM image of the plasmonic structure according to the seventeenth embodiment.
  • nanodisks 101 having a diameter of 80 nm were arranged with a period P of 300 nm.
  • FIG. 36B is a diagram illustrating the polarization dependency of the reflection characteristics of the plasmonic structure according to the seventeenth embodiment. Specifically, the measurement values (experimental results) of the reflection spectrum obtained by making light having different polarization directions ⁇ pol incident on the plasmonic structure are shown.
  • the polarization direction ⁇ pol (direction of the electric field vector E) with respect to the plasmonic structure is the direction indicated by the solid line arrow in FIG. 36A.
  • Example 17 light was incident from three polarization directions ⁇ pol (0 °, 45 °, 90 °). As shown in FIG. 36B, the three reflection spectra had almost the same shape. This indicates that the nanodisk 101 exhibits almost the same performance in all incident polarization directions. Such a feature is useful for color generation under a randomly polarized light source such as an LED or sunlight. A slight difference was caused in the position of the resonance wavelength among the three incident polarization directions, which is presumed to be due to the shape distribution of the manufactured nanodisk 101.
  • Example 18 In Example 18, nanodisks 101 having a diameter of 80 nm were arranged with a period P of 300 nm.
  • the plasmonic structure was coated with a transparent dielectric.
  • an electron beam resist polymer having a thickness of 400 nm (ZEP520A manufactured by Nippon Zeon Co., Ltd., refractive index in the visible wavelength region: 1.55 or less) was used.
  • FIG. 37 is a diagram illustrating experimental results (measured values) of the reflection spectrum of the plasmonic structure according to Example 18.
  • the vertical axis represents the reflectance
  • the horizontal axis represents the light wavelength (nm).
  • the solid line shows the reflection spectrum of the plasmonic structure according to Example 18.
  • a broken line shows the reflection spectrum of the plasmonic structure according to the comparative example.
  • the comparative example differs from Example 18 only in that it is not coated with a polymer.
  • the present invention can form a color image with sub-wavelength resolution, and is useful in the formation of microscale images for security, high-density optical data storage, and nanoscale optical elements.

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  • General Physics & Mathematics (AREA)
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Abstract

L'invention concerne une structure plasmonique (100) qui comprend une surface de réflexion (104), une couche diélectrique (102), et au moins une saillie (101). La couche diélectrique (102) est stratifiée sur la surface de réflexion (104). La saillie (101) est disposée sur la couche diélectrique (102). Les matériaux utilisés pour former la surface de réflexion (104), la couche diélectrique (102), et la saillie (101), l'épaisseur de la couche diélectrique (102), la hauteur et la forme de la saillie (101), et la taille de l'interface (106) entre la saillie (101) et la couche diélectrique (102), sont commandés de telle sorte qu'une résonance plasmonique de surface est induite à l'interface (106) et la lumière dans une plage spécifique de longueurs d'onde subit une absorption plasmonique à l'interface (106).
PCT/JP2017/004040 2016-02-03 2017-02-03 Structure plasmonique, structure de génération de couleur, et support d'enregistrement Ceased WO2017135430A1 (fr)

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019045860A (ja) * 2017-09-05 2019-03-22 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 光変調素子、及びそれを含む電子機器
WO2020156858A1 (fr) 2019-01-29 2020-08-06 Basf Se Élément de sécurité
WO2021097773A1 (fr) * 2019-11-21 2021-05-27 Huawei Technologies Co., Ltd. Filtre sélectif en longueur d'onde et procédé permettant de fabriquer un filtre sélectif en longueur d'onde
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JP2022510645A (ja) * 2018-11-29 2022-01-27 ラ トローブ ユニバーシティ 顕微鏡検査方法及びシステム
CN115249432A (zh) * 2021-04-28 2022-10-28 中国科学院微电子研究所 一种防伪彩色标签及其制作方法和印刷品的制备方法
US12270981B2 (en) 2018-11-29 2025-04-08 La Trobe University Method of analysis of a sample including forming an image and controlling a subsequent analysis process using the image formed
US12315201B2 (en) 2018-11-29 2025-05-27 La Trobe University Automated method of identifying a structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006085515A1 (fr) * 2005-02-09 2006-08-17 Kyoto University Dispositif optique de controle de la reflexion
JP2010008990A (ja) * 2007-07-13 2010-01-14 Canon Inc 光学フィルタ
JP2013174683A (ja) * 2012-02-24 2013-09-05 Toppan Printing Co Ltd 表示体および表示体の観察方法
WO2016125843A1 (fr) * 2015-02-04 2016-08-11 凸版印刷株式会社 Dispositif d'affichage et procédé d'observation de dispositif d'affichage

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013525863A (ja) * 2010-04-27 2013-06-20 ザ リージェンツ オブ ユニバーシティー オブ ミシガン プラズモン・カラー・フィルタ及び光起電力能力を有するディスプレイ・デバイス

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006085515A1 (fr) * 2005-02-09 2006-08-17 Kyoto University Dispositif optique de controle de la reflexion
JP2010008990A (ja) * 2007-07-13 2010-01-14 Canon Inc 光学フィルタ
JP2013174683A (ja) * 2012-02-24 2013-09-05 Toppan Printing Co Ltd 表示体および表示体の観察方法
WO2016125843A1 (fr) * 2015-02-04 2016-08-11 凸版印刷株式会社 Dispositif d'affichage et procédé d'observation de dispositif d'affichage

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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JP2019045860A (ja) * 2017-09-05 2019-03-22 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 光変調素子、及びそれを含む電子機器
US12270981B2 (en) 2018-11-29 2025-04-08 La Trobe University Method of analysis of a sample including forming an image and controlling a subsequent analysis process using the image formed
JP7483707B2 (ja) 2018-11-29 2024-05-15 ラ トローブ ユニバーシティ 顕微鏡検査方法及びシステム
US12332463B2 (en) 2018-11-29 2025-06-17 La Trobe University Microscopy method and system
JP7693054B2 (ja) 2018-11-29 2025-06-16 ラ トローブ ユニバーシティ 顕微鏡検査方法及びシステム
JP2022510645A (ja) * 2018-11-29 2022-01-27 ラ トローブ ユニバーシティ 顕微鏡検査方法及びシステム
US12315201B2 (en) 2018-11-29 2025-05-27 La Trobe University Automated method of identifying a structure
JP2024109617A (ja) * 2018-11-29 2024-08-14 ラ トローブ ユニバーシティ 顕微鏡検査方法及びシステム
WO2020156858A1 (fr) 2019-01-29 2020-08-06 Basf Se Élément de sécurité
US12296391B2 (en) 2019-01-29 2025-05-13 Basf Se Security element
WO2021097773A1 (fr) * 2019-11-21 2021-05-27 Huawei Technologies Co., Ltd. Filtre sélectif en longueur d'onde et procédé permettant de fabriquer un filtre sélectif en longueur d'onde
CN112850638A (zh) * 2020-12-31 2021-05-28 中国科学院微电子研究所 结构色功能纳米结构及其制备方法
CN115249432A (zh) * 2021-04-28 2022-10-28 中国科学院微电子研究所 一种防伪彩色标签及其制作方法和印刷品的制备方法
CN113555608B (zh) * 2021-07-20 2023-02-28 南京大学 具有近零能耗显示器件的电化学系统、制备方法和显示方法
CN113555608A (zh) * 2021-07-20 2021-10-26 南京大学 具有近零能耗显示器件的电化学系统、制备方法和显示方法
CN113744620A (zh) * 2021-09-06 2021-12-03 中国科学院微电子研究所 显色结构、显色结构的制备方法和防伪标识

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