WO2017111198A1 - Bidirectional contact module for semiconductor test and semiconductor test socket using same - Google Patents

Abstract

The present invention relates to a bidirectional contact module for a semiconductor test and a semiconductor test socket using the same. The bidirectional contact module for a semiconductor test according to the present invention comprises: an upper support member of an insulating material having elasticity extending in a longitudinal direction; a plurality of upper mesh parts having conductivity which are attached to the upper surface of the upper support member so as to be spaced apart from each other in the longitudinal direction and contact with terminals of a semiconductor element; a lower support member of an insulating material disposed apart from the upper support member in a vertical direction and having elasticity extending in the longitudinal direction; a lower mesh part having conductivity which is attached to the lower surface of the lower support member apart from each other in the longitudinal direction so as to correspond to the plurality of upper meshes; a lateral support bar of an insulating material which is configured such that the upper support member and the lower support member are coupled at both sides in the vertical direction, and both lateral sides extend outwardly from the upper support member and the lower support member; and a plurality of upper and lower connection parts which electrically connect the upper and lower mesh parts to each other in a corresponding manner. Accordingly, it is possible to compensate for the shortcomings of a pogo-pin type and PCR type semiconductor test sockets, thereby realizing a fine pitch and securing a stable electrical contact even if the height is long or short in the vertical direction.

Description

Bidirectional contact module for semiconductor test and semiconductor test socket using the same

The present invention relates to a bidirectional conductive sheet, a semiconductor test socket using the same, and a method of manufacturing a bidirectional conductive sheet, and more particularly, to a bidirectional contact module for semiconductor test, which can compensate for the disadvantages of a pogo-pin type semiconductor test socket. It relates to a semiconductor test socket using the same.

After the semiconductor device is manufactured, the semiconductor device performs a test to determine whether the electrical performance is poor. The positive test of the semiconductor device is performed by inserting a semiconductor test socket (or a contactor or a connector) formed between the semiconductor device and the test circuit board so as to be in electrical contact with a terminal of the semiconductor device. The semiconductor test socket is also used in a burn-in test process during the manufacturing process of the semiconductor device, in addition to the final positive inspection of the semiconductor device.

With the development and miniaturization of semiconductor device integration technology, the size and spacing of terminals of semiconductor devices, that is, leads, are also miniaturized. Accordingly, there is a demand for a method of forming minute spacing between conductive patterns of test sockets.

However, the conventional Pogo-pin type semiconductor test socket has a limitation in manufacturing a semiconductor test socket for testing a semiconductor device to be integrated. 1 to 3 are diagrams showing an example of a conventional Pogo-pin type semiconductor test socket disclosed in Korean Patent Laid-Open No. 10-2011-0065047.

1 to 3, a conventional semiconductor test socket 100 includes a housing 110 having a through hole 111 formed in a vertical direction at a position corresponding to a terminal 131 of a semiconductor device 130; Pogo-pin 120 mounted in the through hole 111 of the housing 110 to electrically connect the terminal 131 of the semiconductor device 130 and the pad 141 of the test device 140. Is done.

The configuration of the pogo-pin (120) (pogo-pin) (120) is used as a pogo-pin (Pogo-pin) body, the barrel 124 having a cylindrical shape with an empty inside, and formed on the lower side of the barrel 124 The semiconductor device may be connected to a contact tip 123, a spring 122 connected to the contact tip 123 inside the barrel 124 and contracting and expanding a motion, and a spring 122 connected to the contact tip 123. 130 is composed of a contact pin 121 to perform the vertical movement in accordance with the contact.

At this time, the spring 122 is contracted and expanded while absorbing the mechanical shock transmitted to the contact pin 121 and the contact tip 123, the terminal 131 of the semiconductor device 130 and the pad of the test device 140 141 is electrically connected to check whether there is an electrical defect.

However, the conventional Pogo-pin type semiconductor test socket as described above uses a physical spring to maintain elasticity in the vertical direction, inserts the spring and the pin into the barrel, and Since the process has to be inserted into the through-hole of the housing again, the process is complicated and the manufacturing cost increases due to the complexity of the process.

In addition, the physical configuration itself for the implementation of the electrical contact structure having elasticity in the vertical direction has a limit to implement the fine pitch, and the situation has already reached the limit to apply to the integrated semiconductor device in recent years.

In order to overcome the limitations of the pogo-pin type semiconductor device, the limited technology forms a perforated pattern in a vertical direction on a silicon main body made of an elastic silicon material, and then conductive powder inside the perforated pattern. It is a PCR socket type semiconductor test socket that fills the conductive pattern to form a conductive pattern.

However, the PCR-type semiconductor test socket also has a problem due to structural limitations of the PCR-type semiconductor test socket, such as a problem of shortening of life due to separation of conductive powder filled therein.

Accordingly, there is a need for development of other types of semiconductor test sockets capable of realizing fine pitches, but also to solve the problems of height limitations and other types of semiconductor test sockets such as PCR type semiconductor test sockets.

Accordingly, the present invention has been made to solve the above problems, to compensate for the shortcomings of the semiconductor test socket of the pogo-pin type and PCR type, it is possible to implement the fine pitch while increasing the height in the vertical direction long or short The object of the present invention is to provide a bidirectional contact module for semiconductor test and a semiconductor test socket using the same, which can guarantee stable electrical contact even if implemented.

According to the present invention, the upper support member of the insulating material having an elasticity extending in the longitudinal direction and the upper surface of the upper support member is attached to the spaced apart from each other in the longitudinal direction in contact with the terminal of the semiconductor element A plurality of upper mesh portions having conductivity, spaced apart from the upper support member in a vertical direction, and provided with a lower support member of an insulating material having elasticity extending in the longitudinal direction, and a lower surface of the lower support member. The lower mesh part having conductivity and being in contact with the terminals of the test circuit board so as to be spaced apart from each other in the longitudinal direction so as to correspond to the plurality of upper meshes, and the upper support member and the lower support member are respectively disposed in both the vertical direction Is coupled to, the both sides in the horizontal direction extending outward than the upper support member and the lower support member Horizontal support bar and the insulating material is formed so as to, be achieved by the mutually corresponding portions of the upper mesh and the two-way keontekteu module for a semiconductor test, comprising a step of including a plurality of the lower of upper and lower connection portion electrically connected to the mesh unit for.

Here, the upper mesh portion and the lower mesh portion may include a mesh having a network structure and a plating layer formed by plating of a metal of a conductive material on the base mesh.

In addition, the base mesh may be made of an insulating polymer compound material or a metal material.

In addition, when the base mesh is made of a polymer compound material, the plating layer may be formed by sequentially plating copper, nickel, and gold.

In addition, at least one of an upper surface of the upper mesh portion and a lower surface of the lower mesh portion may be provided with a metal powder to form a rough surface.

In addition, each of the upper and lower connection parts may be provided in the form of a conductive material having one side connected to the upper mesh part and the other side connected to the lower mesh part.

And, inside the upper support member, one side is exposed to the upper surface of the upper support member to be in electrical contact with one of the upper mesh portion, the other side is the upper conductive powder exposed to the lower surface of the upper support member is A plurality of upper mesh portions are formed along the longitudinal direction; Inside the lower support member, one side of the lower conductive powder is exposed to the lower surface of the lower support member to be in electrical contact with one of the lower mesh parts, and the other side is exposed to the upper surface of the lower support member. A plurality of lower mesh portions corresponding to the lower mesh portions; A connection conductive pattern electrically connecting the upper conductive powder and the lower conductive powder to each other in the horizontal support bar is formed along the length direction; The upper conductive powder, the connection conductive pattern, and the lower conductive powder, which are electrically connected to each other, may form one vertical connection part.

Here, one connection conductive pattern may be formed by a conductive sheet covering at least one side of the upper surface, the lower surface, and both sides of the horizontal support bar.

The conductive sheet may be provided in the form of a flexible circuit board on which at least one surface of the PI film is plated with a conductive material.

In addition, one connection conductive pattern may be provided in the form of a via hole in which a metal of conductive material is coated on the inner surface of the perforated hole perforated in the vertical direction on the horizontal support bar.

In addition, one connection conductive pattern may be formed by winding at least one or more times the outer diameter of the horizontal support bar with a conductive wire.

On the other hand, the above object is in accordance with another embodiment of the present invention, has an open rectangular shape in the vertical direction, and the inner housing formed with a plurality of slots from the top to the bottom to correspond to a pair of sides facing each other, facing each other The plurality of bidirectional contact module according to any one of claims 1 to 10 respectively inserted into the pair of slots and the inner housing is provided in the form of a hollow frame so that the plurality of the bidirectional contact module is exposed to the top An outer housing in engagement with; It is also achieved by a semiconductor test socket, characterized in that both edges of the transverse support bar of the bidirectional contact module are respectively inserted into the slots on both sides.

According to the present invention according to the above configuration, after forming the upper mesh portion and the lower mesh portion 50 in the upper support member and the lower support member of the insulating material, respectively, the upper support member and the lower support member is attached to the horizontal support bar In this way, the bidirectional contact module can be manufactured in a simpler way.

In addition, the pitch in the horizontal direction can be adjusted only by adjusting the distance between the upper mesh portion or the lower mesh portion, thereby overcoming the pitch limit of the conventional Pogo-pin type semiconductor test socket.

In addition, the thickness of the upper support member, the lower support member or the horizontal support bar can be adjusted more easily in the vertical direction, the upper mesh portion having a conductivity, the lower mesh portion and the upper and lower connecting portions electrically connecting them By forming the conductive lines in the vertical direction through the, more stable electrical connection is possible.

1 to 3 are diagrams for explaining a conventional Pogo-pin type semiconductor test socket,

4 is a diagram for describing a bidirectional contact module for a semiconductor test according to a first embodiment of the present invention;

5 is a diagram for describing a bidirectional contact module for semiconductor test according to a second embodiment of the present invention;

6 is a view showing embodiments of a horizontal support bar of a bidirectional contact module for semiconductor test according to the present invention,

7 is an exploded perspective view of a semiconductor test socket according to the present invention;

8 is a cross-sectional view of a semiconductor test socket according to the present invention,

 9 is a cross-sectional view of the bidirectional contact module 1e according to the third embodiment of the present invention.

The present invention relates to a bidirectional contact module for a semiconductor test, comprising: an upper support member of an insulating material having an elasticity extending in a longitudinal direction, and a semiconductor device attached to the upper surface of the upper support member at a distance from each other in the longitudinal direction; A plurality of upper mesh portions having conductivity contacting the terminals of the plurality of upper mesh portions, spaced apart from the upper support member in the vertical direction, and lower supporting members of an insulating material having elasticity extending in the longitudinal direction, and the lower support. A lower mesh portion having conductivity and being in contact with the terminals of the test circuit board so as to be spaced apart from each other in the longitudinal direction to correspond to the plurality of upper meshes on the lower surface of the member, the upper support member and the lower support member Respectively coupled to both sides in the vertical direction, and both sides of the horizontal direction are connected to the upper support member and the And a horizontal support bar formed of an insulating material extending outward from the lower support member, and a plurality of vertical connecting portions electrically connecting the upper mesh part and the lower mesh part to correspond to each other.

Hereinafter, with reference to the accompanying drawings will be described embodiments of the present invention;

4 is a diagram for describing a bidirectional contact module 1 for a semiconductor test according to a first embodiment of the present invention. Referring to FIG. 4, the bidirectional contact module 1 for a semiconductor test according to the first embodiment of the present invention includes an upper support member 20, a plurality of upper mesh portions 40, a lower support member 30, It includes a plurality of lower mesh portion 50, the horizontal support bar 10 and a plurality of vertical connection.

The upper support member 20 is made of an insulating material having elasticity extending in the longitudinal direction. In the present invention, for example, the upper support member 20 is provided with a silicon material having elasticity.

The lower support member 30 is provided with an insulating material having elasticity extending in the longitudinal direction corresponding to the shape of the upper support member 20. Like the upper support member 20, the lower support member 30 is an example of being provided with a silicon material having elasticity.

The plurality of upper mesh portions 40 are attached to the upper surface of the upper support member 20 in a state spaced apart from each other along the longitudinal direction. Here, each upper mesh portion 40 is provided to be conductive, the upper mesh portion 40 is a terminal of the semiconductor device in the test process when the bidirectional contact module 1 according to the present invention is applied to the semiconductor test socket (Fig. Contact directly).

The plurality of lower mesh parts 50 are attached to the lower surface of the lower support member 30 in a state spaced apart from each other along the longitudinal direction. Here, each lower mesh portion 50 is provided to be conductive, and the lower mesh portion 50 is a pad 510 of the test apparatus 500 when the bidirectional contact module 1 according to the present invention is applied to the semiconductor test socket. , See FIG. 8).

In the present invention, for example, the upper mesh portion 40 and the lower mesh portion 50 are manufactured to have conductivity by a plating layer formed by plating a metal of conductive material on a base mesh of a network structure.

For example, when the base mesh is made of a synthetic polymer compound material such as polyester, after plating of copper, nickel and gold may be sequentially plated to form a plating layer. As another example, when the base mesh is made of a metal material such as sus, a plating layer may be formed through sequential plating of nickel and gold.

Here, in the present invention, although the upper surface of each upper mesh portion 40 is shown to have a flat shape, the surface of the conductive material may be applied so that the surface has an uneven shape. In addition, the lower mesh portion 50 may also be provided to have a concave-convex shape through the application of powder of a conductive material.

The horizontal support bar 10 is disposed between the upper support member 20 and the lower support member 30. That is, the upper support member 20 is coupled to the upper portion of the horizontal support bar 10 and the lower support member 30 is coupled to the lower portion of the horizontal support bar 10. Here, the horizontal support bar 10 is provided with an insulating material, it is provided with a rigid material than the upper support member 20 and the lower support member 30. Here, the rigidity of the horizontal support bar 10 is preferably provided to have a rigidity not to bend the pressure in the downward direction formed by the semiconductor device when inspecting the semiconductor device through the semiconductor test socket according to the present invention. This will be described later.

In addition, the horizontal support bar 10 according to the present invention is formed so that both sides in the horizontal direction extending outward in the horizontal direction than the upper support member 20 and the lower support member 30, when applied to the semiconductor test socket to be described later It can be used as a structure for coupling, a detailed description thereof will be described later.

The plurality of vertically connecting portions electrically connect the upper mesh portion 40 and the lower mesh portion 50 at corresponding positions. In the first embodiment of the present invention, the vertical connecting portion, as shown in (b) of FIG. 4, one side is in contact with the lower surface of the upper mesh portion 40 and the other side is at the lower surface of the lower mesh portion 50. For example, it is provided in the form of a conductive wire (W) in contact.

Here, in (b) of FIG. 4, the insulating member is formed such that the cover member 20 ′ is formed so that the wire W is not exposed to the outside. After forming the wire W, the liquid silicone is applied and then cured. It is possible to prevent the external exposure of the conductive wire (W).

According to the configuration as described above, after forming the upper mesh portion 40 and the lower mesh portion 50 in the upper support member 20 and the lower support member 30 of the insulating material, respectively, on the horizontal support bar 10 By attaching the upper support member 20 and the lower support member 30, the bidirectional contact module 1 can be manufactured in a simpler manner.

In addition, the pitch in the horizontal direction can be adjusted only by adjusting the gap between the upper mesh portion 40 or the lower mesh portion 50, thereby overcoming the pitch limitation of the conventional Pogo-pin type semiconductor test socket. You can do it.

In addition, by adjusting the thickness of the upper support member 20, the lower support member 30 or the horizontal support bar 10, the thickness in the vertical direction can be more easily adjusted, the upper mesh portion 40 having conductivity By forming a conductive line in the vertical direction through the lower mesh part 50 and the wire W electrically connecting the lower mesh part 50, a more stable electrical connection is possible.

Hereinafter, the bidirectional contact module 1a for semiconductor test according to the second embodiment of the present invention will be described with reference to FIG. 5. The semiconductor test contact module 1a according to the second embodiment of the present invention includes a plurality of upper mesh portions 40a, an upper support member 20a, a horizontal support bar 10a, a lower support member 30a, and a plurality of contacts. It includes a lower mesh portion 50a and a plurality of vertical connecting portions.

As shown in FIG. 5, the bidirectional contact module 1a for semiconductor test according to the second embodiment of the present invention includes a plurality of upper mesh portions 40a, upper support members 20a, and horizontal support bars (from top). 10a), the lower support member 30a and the lower mesh portion 50a are sequentially formed in the same manner as in the first embodiment, and the structure and the material also correspond to the first embodiment, and description thereof will be omitted.

In the second embodiment of the present invention, a plurality of upper conductive powders 70a are formed along the length direction at positions corresponding to the plurality of upper mesh portions 40a inside the upper support member 20a. More specifically, as shown in FIG. 5B, each of the upper conductive powders 70a has one side exposed to the upper surface of the upper support member 20a so that the upper mesh portion 40a at the corresponding position is shown. Electrical contact with The other side of each of the upper conductive powders 70a is exposed to the lower surface of the upper support member 20a.

Similarly, a plurality of lower conductive powders 80a are formed along the length direction at positions corresponding to the plurality of lower mesh portions 50a inside the lower support member 30a. More specifically, as shown in FIG. 5B, each of the lower conductive powders 80a has one side exposed to the lower surface of the lower support member 30a so that the lower mesh portion 50a at the corresponding position is shown. Electrical contact with The other side of each lower conductive powder 80a is exposed to the upper surface of the lower support member 30a.

In addition, a connecting conductive pattern 60a for electrically connecting the upper conductive powder 70a and the lower conductive powder 80a to each other is formed in the horizontal support bar 10a along the length direction. In the second embodiment of the present invention, one connection conductive pattern 60a is formed by the upper surface, the lower surface, and the horizontal support bar 10a, as shown in FIGS. 5A and 6A. For example, it is formed by a conductive sheet covering at least one side of both sides.

That is, conductive sheets are formed on the upper surface and the lower surface of the horizontal support bar 10a, respectively, and at least one of the two surfaces is formed with a conductive sheet for electrically connecting the conductive sheet of the upper surface and the conductive sheet of the lower surface. Can be.

Through the above configuration, one upper conductive powder 70a, one connection conductive pattern 60a, and one lower conductive powder 80a corresponding to each other are electrically connected to form one vertical connection part. The upper conductive powder 70a is electrically connected to the upper mesh portion 40a, and the lower conductive powder 80a is electrically connected to the lower mesh portion 50a, thereby providing the upper mesh portion 40a and the lower mesh portion 50a. ) Becomes electrically connectable.

Here, the conductive sheet may be provided in the form of a flexible circuit board on which at least one surface of the PI film is plated with a conductive material. That is, the plating material of the flexible circuit board is patterned in the form of the connection conductive pattern 60a according to the present invention, and after the connection conductive pattern 60a is formed in the corresponding portion through nickel and gold plating, the horizontal support bar 10a is formed. By attaching so as to surround the circumference, the connection conductive pattern 60a can be formed on the horizontal support bar 10a.

FIG. 6 is a diagram illustrating another example of the connection conductive pattern 60a of the horizontal support bar 10a of the bidirectional contact module 1a for semiconductor test according to the present invention. FIG. 6B illustrates an example in which a perforated hole formed in the vertical support bar 10b is formed in the horizontal support bar 10b and provided in the form of a via hole in which a metal of a conductive material is coated on the inner surface of the perforated hole. Here, it is preferable that a conductive pad electrically connected to the via hole is formed on the upper surface and the lower surface of the via hole.

FIG. 6C illustrates an example in which the outer diameter of the horizontal support bar 10c is wound at least one or more with a conductive wire to form a connection conductive pattern 60c. When the outer diameters of the horizontal support bar 10c are wound to be spaced apart from each other by conductive wires, the upper conductive powder 70a and the lower conductive powder 80a are electrically connected to at least one of them, thereby forming a vertical connection part.

FIG. 6C is a view showing an example in which conductive wires are independently wound, and after winding one long conductive wire continuously in a state spaced apart at regular intervals, any one of the surfaces of both sides of the horizontal support bar 10d. When the conductive wires are cut in the horizontal direction, adjacent conductive wires may be electrically disconnected to form a connection conductive pattern 60d.

The above-described connection conductive patterns 60a, 60b, 60c, and 60d are formed on the horizontal support bars 10a, 10b, 10c, and 10d, and then the surfaces of both sides of the horizontal support bars 10a, 10b, 10c, and 10d may be formed of silicon or the like. By coating with a conductive material, it is possible to enable insulation between adjacent bidirectional contact modules 1a when manufacturing a semiconductor test socket.

Hereinafter, a semiconductor test socket according to the present invention will be described in detail with reference to FIGS. 7 and 8.

The semiconductor test socket according to the present invention includes an inner housing 300, a plurality of bidirectional contact modules 1a and an outer housing 400.

The inner housing 300 has a square shape open in the vertical direction. In addition, a plurality of slits 310 are formed from an upper side to a lower side to correspond to a pair of opposite sides of the inner housing 300.

Each bidirectional contact module 1a is inserted into a pair of slots facing each other, respectively. Here, both edges of the horizontal support bar 10a of the bidirectional contact module 1a are inserted into the slots on both sides, respectively, and are installed in the inner housing 300. Here, the bidirectional contact module 1a is as described above, and FIG. 7 illustrates that the bidirectional contact module 1a according to the second embodiment of the present invention is applied.

The outer housing 400 is provided in a hollow frame shape, and is coupled to the inner housing 300 so that the plurality of bidirectional contact modules 1a are exposed upward. When the external housing 400 is fixed to the test apparatus 500 by pressing downward, the lower mesh portion 50a of the bidirectional contact module 1a contacts the pad 510 of the test apparatus 500. State is maintained.

Here, the outer housing 400 is formed with a bolt through hole 410 through which the coupling bolt 420 for coupling the outer housing 400 and the test device 500, the bolt through hole in the test device 500 The bolt fastening hole 520 is formed at a position corresponding to 410, and the coupling bolt 420 passing through the bolt through hole 410 is fastened to the bolt fastening hole 520, thereby providing the semiconductor test socket according to the present invention. It can be fixed to this test apparatus.

As described above, the semiconductor test socket can be manufactured by inserting the bidirectional contact module 1a into the slit 310 of the inner housing 300, thereby making it possible to manufacture in a simpler manner.

In addition, even if the number of terminals of the semiconductor device is changed, the number of slots of the inner housing 300 and the number of conductive lines in the vertical direction of the bidirectional contact module 1a are varied so as to be manufactured in the same manner, thereby forming various patterns. It is possible to manufacture a semiconductor test socket for testing a semiconductor device.

In the above embodiment, the upper mesh portions 40 and 40a and the lower mesh portions 50 and 50a are described as being conductive by the plating layer. In addition, after the upper mesh portion 40a and the lower mesh portion 50a according to the second embodiment of the present invention are provided with an insulating material, the conductive powder constituting the upper conductive powder 70a and the lower conductive powder 80a The upper mesh portion 40a and the lower mesh portion 50a may be exposed to the outside of the upper mesh portion 40a and the lower mesh portion 50a through a network structure to provide conductivity.

9 is a cross-sectional view of the bidirectional contact module 1e according to the third embodiment of the present invention. Referring to FIG. 9, the bidirectional contact module 1e according to the third embodiment of the present invention may include a plurality of upper mesh portions 40e, upper support members 20e, horizontal support bars 10e, and lower support members. 30e, a plurality of lower mesh portions 50e, and a plurality of vertical connecting portions.

Here, the plurality of upper mesh portion 40e, the upper support member 20e, the horizontal support bar 10e, the lower support member 30e, the plurality of the bidirectional contact module 1e according to the third embodiment of the present invention The basic configuration of the lower mesh portion 50e corresponds to the above-described first or second embodiment, and description thereof will be omitted.

The upper mesh portion 40e and the lower mesh portion 50e of the bidirectional contact module 1e according to the third embodiment of the present invention are connected via the side base mesh 20e ', and are provided with a wire W. As an example, the connection is covered by the side base mesh 20e '.

Here, when the upper mesh portion 40e and the lower mesh portion 50e are conductive by plating, only an area corresponding to the upper mesh portion 40e and the lower mesh portion 50e is plated during the plating of the base mesh. 9, the region located on the side of the bidirectional contact module 1e is not plated, so that the side base mesh portion 20e 'on the side has insulation and wires ( W) can be covered.

In addition, when the upper mesh portion 40e and the lower mesh portion 50e are conductive by the conductive powder, the base mesh is bent and attached as shown in FIG. 9 and the upper conductive powder 70a and the lower conductive powder ( The conductive powder constituting the 80a is exposed to the outside of the upper mesh portion 40e and the lower mesh portion 50e through the mesh structure so that the upper mesh portion 40e and the lower mesh portion 50e are conductive, and the remaining portion is conductive. It may be provided to form the side base mesh portion 20e '.

Although some embodiments of the invention have been shown and described, it will be apparent to those skilled in the art that modifications may be made to the embodiment without departing from the spirit or spirit of the invention. . It is intended that the scope of the invention be defined by the claims appended hereto and their equivalents.

[Description of the code]

1,1a: Contact module for semiconductor test

10, 10a, 10b, 10c, 10d: horizontal support bar 20, 20a: upper support member

30,30a: lower support member 40,40a: upper mesh portion

50,50a: lower mesh part

60a, 60b, 60c, 60d: connection conductive pattern

70a: upper conductive powder 80a: lower conductive powder

300: inner housing 310: slit

400: outer housing W: wire

The present invention is used in the positive test of electrical and electronic devices such as semiconductor devices, or during burn-in testing of semiconductor devices.

Claims (12)

An upper support member made of an insulating material having elasticity extending in the longitudinal direction, A plurality of upper mesh parts attached to the upper surface of the upper support member in a state in which they are spaced apart from each other in the longitudinal direction, and having a conductivity contacting the terminals of the semiconductor device; A lower support member of an insulating material disposed in a state spaced apart from the upper support member in a vertical direction and having elasticity extending in the length direction; A lower mesh part having a conductivity on the lower surface of the lower support member so as to be spaced apart from each other in the longitudinal direction so as to correspond to the plurality of upper meshes and to be in contact with the terminals of the test circuit board; A horizontal support bar made of an insulating material, wherein the upper support member and the lower support member are respectively coupled at both sides of the upper and lower directions, and both sides of the horizontal direction extend outwardly from the upper support member and the lower support member; And a plurality of vertical connecting portions electrically connecting the upper mesh portion and the lower mesh portion corresponding to each other. The method of claim 1, The upper mesh portion and the lower mesh portion Mesh having a network structure, And a plating layer formed on the base mesh by plating of a metal of a conductive material. The method of claim 2, The base mesh is a bidirectional contact module for a semiconductor test, characterized in that provided with an insulating polymer compound material or metal material. The method of claim 3, When the base mesh is made of a polymer compound material, the plating layer is a bidirectional contact module for semiconductor test, characterized in that the copper, nickel and gold are sequentially plated. The method of claim 2, At least one of an upper surface of the upper mesh portion and a lower surface of the lower mesh portion is provided with metal powder to form a rough surface. The method of claim 1, Each of the upper and lower connecting parts is a bidirectional contact module for semiconductor test, characterized in that a conductive material having one side connected to the upper mesh part and the other side connected to the lower mesh part is provided in the form of a wire. The method of claim 1, Inside the upper support member, one side is exposed to the upper surface of the upper support member to be in electrical contact with one of the upper mesh portions, and the other side is the upper conductive powder exposed to the lower surface of the upper support member in the longitudinal direction. Along the plurality of upper mesh portions; Inside the lower support member, one side of the lower conductive powder is exposed to the lower surface of the lower support member to be in electrical contact with one of the lower mesh parts, and the other side is exposed to the upper surface of the lower support member. A plurality of lower mesh portions corresponding to the lower mesh portions; A connection conductive pattern electrically connecting the upper conductive powder and the lower conductive powder to each other in the horizontal support bar is formed along the length direction; And the upper conductive powder, the connection conductive pattern, and the lower conductive powder electrically connected to each other to form one vertical connection part. The method of claim 7, wherein One connection conductive pattern is The bidirectional contact module for semiconductor test, characterized in that formed by a conductive sheet surrounding at least one side of the upper surface, lower surface, both sides of the horizontal support bar. The method of claim 8, The conductive sheet is a bidirectional contact module for a semiconductor test, characterized in that the at least one surface of the PI film is provided in the form of a flexible circuit board plated with a conductive material. The method of claim 7, wherein One connection conductive pattern is And a via hole in which a metal of conductive material is coated on the inner surface of the perforated hole formed in the vertical support bar on the horizontal support bar. The method of claim 7, wherein One connection conductive pattern is Bidirectional contact module for semiconductor test, characterized in that formed by winding the outer diameter of the horizontal support bar at least once with a conductive wire. An inner housing having a rectangular shape open in the vertical direction and having a plurality of slots formed from top to bottom to correspond to a pair of mutually opposite sides; A plurality of bidirectional contact modules according to any one of claims 1 to 10 respectively inserted into a pair of slots facing each other; An outer housing coupled to the inner housing such that a plurality of the bidirectional contact modules are exposed upwardly in an empty frame shape; And both edges of the horizontal support bar of the bidirectional contact module are respectively inserted into the slots on both sides.

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