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WO2017195551A1 - Module and production method therefor - Google Patents

Module and production method therefor Download PDF

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Publication number
WO2017195551A1
WO2017195551A1 PCT/JP2017/015742 JP2017015742W WO2017195551A1 WO 2017195551 A1 WO2017195551 A1 WO 2017195551A1 JP 2017015742 W JP2017015742 W JP 2017015742W WO 2017195551 A1 WO2017195551 A1 WO 2017195551A1
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WO
WIPO (PCT)
Prior art keywords
lead frame
substrate
stress
base
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2017/015742
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French (fr)
Japanese (ja)
Inventor
弘智 斎藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Rika Co Ltd
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Tokai Rika Co Ltd
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Filing date
Publication date
Application filed by Tokai Rika Co Ltd filed Critical Tokai Rika Co Ltd
Publication of WO2017195551A1 publication Critical patent/WO2017195551A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Definitions

  • the present invention relates to a module and a method for manufacturing the module.
  • a semiconductor sensor element having a measurement region including a resistance temperature detector and a heating resistor formed on a cavity provided in a semiconductor substrate, and heating the heating resistor so as to be higher than the temperature of the resistance temperature detector by a predetermined temperature
  • a thermal air flow sensor that includes a control circuit that performs control to flow current and obtains an air flow signal representing an air flow rate, and a terminal material that outputs the air flow signal to the outside (for example, Patent Documents). 1).
  • the control circuit of the thermal air flow sensor includes an insulating substrate and electric parts such as a semiconductor chip and a chip capacitor arranged on the insulating substrate.
  • the terminal material described above has an end integrated with the insulating substrate.
  • the control circuit is electrically connected to the terminal material through a wire.
  • a part of the semiconductor sensor element, a control circuit, a wire, and a part of the terminal material are integrally covered with a molding material.
  • An object of the present invention is to provide a module that relieves stress acting on a substrate and suppresses defects in an electronic circuit, and a method for manufacturing the module.
  • a module includes a base on which an electronic circuit is formed, a lead frame electrically connected to the electronic circuit, a part of the lead frame, a sealing body that seals the base, and a base And a stress relieving part that relieves stress acting on the substrate.
  • the present invention it is possible to provide a module that relieves stress acting on a substrate and suppresses a malfunction of an electronic circuit, and a method for manufacturing the module.
  • FIG. 1A is a top view showing the module according to the embodiment.
  • FIG. 1B is a cross-sectional view schematically showing the module.
  • FIG. 2A is a cross-sectional view schematically showing the method for manufacturing the module according to the embodiment.
  • FIG. 2B is a cross-sectional view schematically showing the method for manufacturing the module according to the embodiment.
  • FIG. 2C is a cross-sectional view schematically showing the method for manufacturing the module according to the embodiment.
  • FIG. 2D is a cross-sectional view schematically showing the method for manufacturing the module according to the embodiment.
  • FIG. 2E is a cross-sectional view schematically showing the method for manufacturing the module according to the embodiment.
  • a module includes a base on which an electronic circuit is formed, a lead frame electrically connected to the electronic circuit, a part of the lead frame, a sealing body that seals the base, and the base and the lead frame. And a stress relaxation part that relaxes the stress acting on the substrate.
  • this module is configured to relieve the stress acting on the base by the stress relaxation portion, it suppresses the malfunction of the electronic circuit due to the occurrence of cracks in the base as compared with the case where this configuration is not adopted. be able to.
  • FIG. 1A is a top view showing a module according to the embodiment
  • FIG. 1B is a cross-sectional view schematically showing the module.
  • the X axis is a coordinate axis from left to right
  • the Y axis is a coordinate axis from bottom to top
  • the Z axis is a coordinate axis from the back to the front of the page.
  • the XYZ coordinate system shown in FIG. 1A the X axis is a coordinate axis from left to right
  • the Y axis is a coordinate axis from bottom to top
  • the Z axis is a coordinate axis from the back to the front of the page.
  • the X axis is a coordinate axis from left to right
  • the Y axis is a coordinate axis from the front of the paper to the back
  • the Z axis is a coordinate axis from the bottom to the top.
  • the ratio between figures may be different from the actual ratio. “A to B” indicating a numerical range is used in the meaning of A to B.
  • the module 1 includes a substrate 2 as a base on which an electronic circuit 4 is formed, a lead frame 6 electrically connected to the electronic circuit 4, a part of the lead frame 6, and A sealing body 9 that seals the substrate 2 and a stress relaxation portion 8 that is interposed between the substrate 2 and the lead frame 6 and relaxes stress acting on the substrate 2 are provided.
  • the module 1 also has a lead frame 5 that is insulated from the electronic circuit 4.
  • the substrate 2 may be configured such that the resist 3 is not formed on the back surface 21 where the electronic circuit 4 is not formed.
  • the module 1 is formed by transfer molding for sealing the substrate 2 and the like with a sealing resin.
  • the integrated lead frame 6 and substrate 2 are set in a mold cavity heated to approximately 180 ° C.
  • a thermosetting resin tablet used as a sealing resin is put into a pot adjacent to the cavity. The tablet starts to melt in the pot, and when the pressure is applied to the pot, the tablet is fed into the cavity through a gate connecting the pot and the cavity. The liquid tablet is filled in the cavity and cured to form the sealing body 9.
  • the module 1 formed in this manner is taken out of the mold and cooled, stress is generated inside and acts on the substrate 2 and the like.
  • this stress is caused by a difference in linear expansion coefficient between the sealing resin and the substrate 2.
  • the stress is also related to the Young's modulus of the sealing resin.
  • the shrinkage starts by curing. Then, the sealing body 9 has different linear expansion coefficients ( ⁇ 1 , ⁇ 2 ) between the glass transition temperature (Tg) until the sealing body 9 is taken out from the mold and reaches room temperature, that is, from the filling temperature to room temperature. Shrink.
  • the substrate 2 shrinks due to the respective linear expansion coefficient between the filling temperature and room temperature. Since the sealing body 9, the lead frame 6, the substrate 2, and the like contract with different linear expansion coefficients, for example, stress that causes the substrate 2 to warp is generated.
  • the resist 3 is peeled off from the substrate 2 or a crack is generated in the substrate 2, thereby causing a defect of the electronic circuit 4 such as the wire 45 being disconnected.
  • This stress control is performed by combining the shapes and thicknesses of the sealing body 9, the lead frame 6 and the substrate 2, the respective linear expansion coefficients, and the like, but there are many combinations of patterns and is difficult.
  • the module 1 according to the present embodiment is configured to take this combination into account and to consume a part of the stress acting on the substrate 2 for the destruction of the stress relaxation portion 8 and relax the stress acting on the substrate 2. Has been.
  • the stress relaxation part 8 of this embodiment is an insulating adhesive as an example.
  • the destruction of the stress relaxation portion 8 includes, for example, peeling of the adhesive and shearing of the adhesive. Further, peeling and shearing include at least part of peeling and at least part of shearing. In FIG. 1B and 2E, destruction of the stress relaxation part 8 is shown with the wavy line.
  • the linear expansion coefficient described below is mainly the linear expansion coefficient in the X-axis and Y-axis directions. Moreover, the linear expansion coefficient described below shall be a value in room temperature (20 degreeC) as an example.
  • the substrate 2 has a plate shape.
  • the substrate 2 is, for example, a printed wiring board. Further, as shown in FIG. 1B, the substrate 2 has a resist 3 formed on the front surface 20 and the back surface 21.
  • substrate 2 of this embodiment is a glass epoxy board
  • the linear expansion coefficient of the substrate 2 is approximately 10 to 20 ppm / ° C.
  • An electronic circuit 4 is formed on the surface 20 of the substrate 2.
  • a plurality of pads 42 and a plurality of pads 43 are formed on the substrate 2.
  • the pad 42 and the pad 43 are formed by copper plating as an example.
  • the pad 42 is electrically connected to the sensor element 40 via the wire 45.
  • the pad 43 is electrically connected to the lead frame 6 via the wire 45.
  • the resist 3 is a covering material for protecting a specific area.
  • This resist 3 may be formed by, for example, a printing method or a photolithography method.
  • the electronic circuit 4 includes a sensor element 40 and a plurality of electronic components 41 as shown in FIGS. 1A and 1B.
  • the sensor element 40 is a semiconductor element including a sensor that converts a detected physical quantity into an electrical quantity, an amplifier that amplifies the output of the sensor, and the like.
  • the sensor element 40 includes a magnetic sensor that converts a change in a magnetic field accompanying the approach of a detection target into an electrical quantity.
  • the sensor element 40 is electrically connected to the electronic component 41 via a wire 45 and a pad 42, for example.
  • the electronic component 41 is, for example, a resistor or a capacitor.
  • the lead frame 5 and the lead frame 6 are formed in an elongated plate shape by, for example, punching or etching.
  • the lead frame 5 and the lead frame 6 are formed using, for example, a conductive metal material such as aluminum or copper, or an alloy material such as brass.
  • the linear expansion coefficient thereof is approximately 17 ppm / ° C.
  • the lead frame 5 and the lead frame 6 may be subjected to plating treatment using a metal material such as tin, nickel, gold, or silver, for example.
  • the lead frame 5 and the lead frame 6 are joined to the back surface 21 side of the substrate 2.
  • the substrate 2 is disposed on the lead frame 5 and the lead frame 6.
  • the lead frame 5 has an elongated plate shape as shown in FIGS. 1A and 1B.
  • a plurality of lead frames 6 are joined to the substrate 2.
  • the lead frame 6 has a base 60 and a joint 61.
  • the base portion 60 has an elongated shape, and a part thereof protrudes from one surface of the sealing body 9.
  • the protruding base 60 becomes a connector terminal 7 to be inserted into the female terminal of the connector to which the module 1 is connected.
  • the distal end of the base 60 has a tapered shape.
  • the wire 45 is joined to the surface of the base 60, and the lead frame 6 and the electronic circuit 4 are electrically connected.
  • the joining portion 61 has a width wider than the width of the base portion 60 and has a rectangular shape.
  • the stress relaxation portion 8 is disposed at the joint portion 61.
  • the stress relaxation part 8 is an adhesive composed of a material having an insulating property.
  • the stress relaxation portion 8 is configured such that the sealing resin is broken in the process from the filling temperature to room temperature.
  • the stress relieving portion 8 only needs to have a bonding strength that allows the lead frame 5, the lead frame 6, and the substrate 2 to be set together in a mold.
  • the linear expansion coefficient of the substrate 2 is approximately 10 to 20 ppm / ° C.
  • the linear expansion coefficient of the lead frame 6 is approximately 17 ppm / ° C.
  • the linear expansion coefficient of the sealing body 9 described later is Since it is approximately 4 to 7 ppm / ° C.
  • the linear expansion coefficient of the adhesive is preferably smaller than 10 ppm / ° C. or larger than 20 ppm / ° C. This is because the adhesive does not follow and shrink in the same manner as the substrate 2 and the lead frame 6, that is, the one having a larger difference in linear expansion coefficient is likely to be broken.
  • the stress relaxation portion 8 is configured as an insulating adhesive containing silicon dioxide, magnesium oxide, aluminum oxide, or the like so as to obtain the above-described linear expansion coefficient.
  • the sealing body 9 covers and integrally covers the substrate 2, the electronic circuit 4, the lead frame 5, and one end of the lead frame 6 by transfer molding.
  • the sealing body 9 is obtained by curing a thermosetting molding material in which a PPS (Poly Phenylene Sulfide) resin or an epoxy resin is a main component and a silica (silicon dioxide) filler is added.
  • an epoxy resin is used as the thermosetting molding material.
  • the linear expansion coefficient of this epoxy resin is approximately 4 to 7 ppm / ° C.
  • the sealing body 9 mainly protects the sensor element 40 from an environment such as light, heat, and humidity.
  • FIG. 1 Manufacturing method of module 1
  • FIG. 2A to 2E are cross-sectional views schematically showing the module manufacturing method according to the embodiment.
  • 2A to 2E schematically show a cross section of the module 1.
  • FIG. 2A to 2E schematically show a cross section of the module 1.
  • the manufacturing method of the module 1 mainly includes preparing a base body on which an electronic circuit is formed, joining the base body and the lead frame with a stress relaxation portion, electrically connecting the electronic circuit and the lead frame, A part of the stress relaxation part and the substrate are molded with a sealing resin to form a sealing body. After the sealing body is formed, at least part of the stress relaxation part and / or at least part of shearing occurs. To relieve the stress acting on the substrate.
  • a substrate 2 on which an electronic circuit 4 is formed is prepared.
  • the substrate 2, the lead frame 5, and the lead frame 6 are joined by the stress relaxation portion 8.
  • the electronic circuit 4 and the lead frame 6 are electrically connected. This connection is performed by connecting the pad 43 of the electronic circuit 4 and the lead frame 6 with the wire 45 based on the wire bonding method. Then, the substrate 2 is set in a mold heated to the filling temperature. This filling temperature is approximately 180 ° C. as an example.
  • a part of the lead frame 6, the electronic circuit 4, the lead frame 5, the stress relaxation part 8, and the substrate 2 are transfer-molded with a sealing resin to form a sealing body 9.
  • the module 1 alleviates the stress acting on the substrate 2 and suppresses the malfunction of the electronic circuit 4.
  • the module 1 is configured to relieve the stress acting on the substrate 2 when the stress relaxation portion 8 is broken by the stress, so that the crack of the substrate 2 is not compared with the case where this configuration is not adopted.
  • the malfunction of the electronic circuit 4 due to the occurrence or disconnection of the wire 45 can be suppressed.
  • the module 1 relieves stress by intentionally destroying the stress relieving part 8
  • the stress is obtained by combining the shapes and thicknesses of the sealing body 9, the lead frame 6 and the substrate 2, and the respective linear expansion coefficients. Compared with the method of relaxing the stress, the stress can be easily relaxed.
  • the module 1 relieves stress by intentionally destroying the stress relieving portion 8, it is possible to suppress the number of simulations for the combination, the time required for design, and the like, thereby suppressing the manufacturing cost.
  • the stress acts on the electronic circuit, which may change the electrical characteristics of the sensor element and the electronic component.
  • the module 1 relieves stress by the stress relieving portion 8, changes in electrical characteristics of the sensor element 40 and the electronic component 41 can be suppressed.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measuring Volume Flow (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

A module 1 has: a substrate 2 serving as a base body on which an electronic circuit 4 is formed; a lead frame 6 which is electrically connected to the electronic circuit 4; a sealing body 9 which seals the substrate 2 and a portion of the lead frame 6; and a stress relaxation part 8 which is interposed between the substrate 2 and the lead frame 6 and which relieves stress acting on the substrate 2.

Description

モジュール及びその製造方法Module and manufacturing method thereof

本発明は、モジュール及びそのモジュールの製造方法に関する。 The present invention relates to a module and a method for manufacturing the module.

測温抵抗体及び半導体基板に設けた空洞上に形成した発熱抵抗体を含む測定部位を有する半導体センサ素子と、測温抵抗体の温度に対して所定の温度だけ高くするよう発熱抵抗体に加熱電流を流す制御を実行し空気流量を表わす空気流量信号を得る制御回路と、空気流量信号を外部に出力するターミナル素材と、を備えた熱式空気流量センサが知られている（例えば、特許文献１参照）。 A semiconductor sensor element having a measurement region including a resistance temperature detector and a heating resistor formed on a cavity provided in a semiconductor substrate, and heating the heating resistor so as to be higher than the temperature of the resistance temperature detector by a predetermined temperature There is known a thermal air flow sensor that includes a control circuit that performs control to flow current and obtains an air flow signal representing an air flow rate, and a terminal material that outputs the air flow signal to the outside (for example, Patent Documents). 1).

熱式空気流量センサの制御回路は、絶縁基板と絶縁基板上に配置された半導体チップ、チップコンデンサなどの電気部品を備えて構成されている。上述のターミナル素材は、端部が絶縁基板に一体化されている。また制御回路は、ワイヤを介してターミナル素材と電気的に接続されている。そして熱式空気流量センサは、半導体センサ素子の一部、制御回路、ワイヤ及びターミナル素材の一部がモールド材で一体被覆されている。 The control circuit of the thermal air flow sensor includes an insulating substrate and electric parts such as a semiconductor chip and a chip capacitor arranged on the insulating substrate. The terminal material described above has an end integrated with the insulating substrate. The control circuit is electrically connected to the terminal material through a wire. In the thermal air flow sensor, a part of the semiconductor sensor element, a control circuit, a wire, and a part of the terminal material are integrally covered with a molding material.

特開平１１－６７５２号公報JP-A-11-6752

特許文献１に開示された熱式空気流量センサは、モールド材と絶縁基板の線膨張係数の差に基づいた応力が絶縁基板に作用する。この熱式空気流量センサは、この応力によって絶縁基板上のレジストの剥離が生じたり、絶縁基板にクラックが生じたりしてワイヤの断線などの不具合が発生する可能性がある。 In the thermal air flow sensor disclosed in Patent Document 1, stress based on the difference in linear expansion coefficient between the mold material and the insulating substrate acts on the insulating substrate. In this thermal air flow sensor, there is a possibility that the resist peels off from the insulating substrate due to this stress, or a crack occurs in the insulating substrate, causing problems such as wire breakage.

本発明の目的は、基体に作用する応力を緩和して電子回路の不具合を抑制するモジュール及びそのモジュールの製造方法を提供することにある。 An object of the present invention is to provide a module that relieves stress acting on a substrate and suppresses defects in an electronic circuit, and a method for manufacturing the module.

本発明の一実施形態によるモジュールは、電子回路が形成された基体と、電子回路と電気的に接続されたリードフレームと、リードフレームの一部、及び基体を封止する封止体と、基体とリードフレームの間に介在し、基体に作用する応力を緩和する応力緩和部と、を有する。 A module according to an embodiment of the present invention includes a base on which an electronic circuit is formed, a lead frame electrically connected to the electronic circuit, a part of the lead frame, a sealing body that seals the base, and a base And a stress relieving part that relieves stress acting on the substrate.

本発明の一実施形態によれば、基体に作用する応力を緩和して電子回路の不具合を抑制するモジュール及びそのモジュールの製造方法を提供することができる。 According to one embodiment of the present invention, it is possible to provide a module that relieves stress acting on a substrate and suppresses a malfunction of an electronic circuit, and a method for manufacturing the module.

図１Ａは、実施形態に係るモジュールを示す上面図である。FIG. 1A is a top view showing the module according to the embodiment. 図１Ｂは、モジュールを模式的に示す断面図である。FIG. 1B is a cross-sectional view schematically showing the module. 図２Ａは、実施形態に係るモジュールの製造方法を模式的に示す断面図である。FIG. 2A is a cross-sectional view schematically showing the method for manufacturing the module according to the embodiment. 図２Ｂは、実施形態に係るモジュールの製造方法を模式的に示す断面図である。FIG. 2B is a cross-sectional view schematically showing the method for manufacturing the module according to the embodiment. 図２Ｃは、実施形態に係るモジュールの製造方法を模式的に示す断面図である。FIG. 2C is a cross-sectional view schematically showing the method for manufacturing the module according to the embodiment. 図２Ｄは、実施形態に係るモジュールの製造方法を模式的に示す断面図である。FIG. 2D is a cross-sectional view schematically showing the method for manufacturing the module according to the embodiment. 図２Ｅは、実施形態に係るモジュールの製造方法を模式的に示す断面図である。FIG. 2E is a cross-sectional view schematically showing the method for manufacturing the module according to the embodiment.

（実施形態の要約）
実施形態に係るモジュールは、電子回路が形成された基体と、電子回路と電気的に接続されたリードフレームと、リードフレームの一部、及び基体を封止する封止体と、基体とリードフレームの間に介在し、基体に作用する応力を緩和する応力緩和部と、を有している。 (Summary of Embodiment)
A module according to an embodiment includes a base on which an electronic circuit is formed, a lead frame electrically connected to the electronic circuit, a part of the lead frame, a sealing body that seals the base, and the base and the lead frame. And a stress relaxation part that relaxes the stress acting on the substrate.

このモジュールは、基体に作用する応力を応力緩和部によって緩和するように構成されるので、この構成を採用しない場合と比べて、基体にクラックが生じることなどに起因する電子回路の不具合を抑制することができる。 Since this module is configured to relieve the stress acting on the base by the stress relaxation portion, it suppresses the malfunction of the electronic circuit due to the occurrence of cracks in the base as compared with the case where this configuration is not adopted. be able to.

[実施形態]
（モジュール１の概要）
図１Ａは、実施形態に係るモジュールを示す上面図であり、図１Ｂは、モジュールを模式的に示す断面図である。図１Ａに示すＸＹＺ座標系は、Ｘ軸が左から右に向かう座標軸であり、Ｙ軸が下から上に向かう座標軸であり、Ｚ軸が紙面の奥から手前側に向かう座標軸である。また図１Ｂに示すＸＹＺ座標系は、Ｘ軸が左から右に向かう座標軸であり、Ｙ軸が紙面の手前から奥に向かう座標軸であり、Ｚ軸が下から上に向かう座標軸である。なお、以下に記載する実施形態に係る各図において、図形間の比率は、実際の比率とは異なる場合がある。また数値範囲を示す「Ａ～Ｂ」は、Ａ以上Ｂ以下の意味で用いるものとする。 [Embodiment]
(Overview of Module 1)
FIG. 1A is a top view showing a module according to the embodiment, and FIG. 1B is a cross-sectional view schematically showing the module. In the XYZ coordinate system shown in FIG. 1A, the X axis is a coordinate axis from left to right, the Y axis is a coordinate axis from bottom to top, and the Z axis is a coordinate axis from the back to the front of the page. In the XYZ coordinate system shown in FIG. 1B, the X axis is a coordinate axis from left to right, the Y axis is a coordinate axis from the front of the paper to the back, and the Z axis is a coordinate axis from the bottom to the top. In each figure according to the embodiments described below, the ratio between figures may be different from the actual ratio. “A to B” indicating a numerical range is used in the meaning of A to B.

モジュール１は、図１Ａ及び１Ｂに示すように、電子回路４が形成された基体としての基板２と、電子回路４と電気的に接続されたリードフレーム６と、リードフレーム６の一部、及び基板２を封止する封止体９と、基板２とリードフレーム６の間に介在し、基板２に作用する応力を緩和する応力緩和部８と、を有している。またモジュール１は、電子回路４とは絶縁されているリードフレーム５を有している。 As shown in FIGS. 1A and 1B, the module 1 includes a substrate 2 as a base on which an electronic circuit 4 is formed, a lead frame 6 electrically connected to the electronic circuit 4, a part of the lead frame 6, and A sealing body 9 that seals the substrate 2 and a stress relaxation portion 8 that is interposed between the substrate 2 and the lead frame 6 and relaxes stress acting on the substrate 2 are provided. The module 1 also has a lead frame 5 that is insulated from the electronic circuit 4.

本実施形態の基板２は、図１Ｂに示すように、表面２０及び裏面２１にレジスト３が形成されている。従って応力緩和部８は、レジスト３とリードフレーム５の間に介在している。また応力緩和部８は、レジスト３とリードフレーム６の間に介在している。 As shown in FIG. 1B, the substrate 2 of this embodiment has a resist 3 formed on the front surface 20 and the back surface 21. Therefore, the stress relaxation portion 8 is interposed between the resist 3 and the lead frame 5. Further, the stress relaxation portion 8 is interposed between the resist 3 and the lead frame 6.

なお変形例として基板２は、電子回路４が形成されていない裏面２１にレジスト３が形成されないように構成されても良い。 As a modification, the substrate 2 may be configured such that the resist 3 is not formed on the back surface 21 where the electronic circuit 4 is not formed.

ここでモジュール１は、基板２などを封止樹脂で封止するトランスファモールド成形により形成される。具体的には、リードフレーム６及び基板２などが一体となったものをおよそ１８０℃に加熱された金型のキャビティにセットする。次に、封止樹脂として用いる熱硬化性樹脂のタブレットをキャビティに隣接するポットに投入する。タブレットは、ポット内で溶融し始め、ポットに圧力がかけられることにより、ポットとキャビティを繋ぐゲートを介してキャビティ内に送られる。液状となったタブレットは、キャビティに充填され、硬化して封止体９を形成する。 Here, the module 1 is formed by transfer molding for sealing the substrate 2 and the like with a sealing resin. Specifically, the integrated lead frame 6 and substrate 2 are set in a mold cavity heated to approximately 180 ° C. Next, a thermosetting resin tablet used as a sealing resin is put into a pot adjacent to the cavity. The tablet starts to melt in the pot, and when the pressure is applied to the pot, the tablet is fed into the cavity through a gate connecting the pot and the cavity. The liquid tablet is filled in the cavity and cured to form the sealing body 9.

このようにして形成されたモジュール１は、金型から取り出されて冷却するにつれて内部に応力が発生し、基板２などに作用する。この応力は、一例として、封止樹脂、基板２などの線膨張係数の差に起因する。また応力は、封止樹脂などのヤング率にも関係している。 As the module 1 formed in this manner is taken out of the mold and cooled, stress is generated inside and acts on the substrate 2 and the like. For example, this stress is caused by a difference in linear expansion coefficient between the sealing resin and the substrate 2. The stress is also related to the Young's modulus of the sealing resin.

具体的には、封止樹脂は、キャビティに充填された後、硬化することで収縮が始まる。そして封止体９は、金型から取り出されて室温になるまでの間、つまり充填温度から室温になるまで、ガラス転移温度（Ｔｇ）を境に異なる線膨張係数（α１、α２）によって収縮する。 Specifically, after the sealing resin is filled in the cavity, the shrinkage starts by curing. Then, the sealing body 9 has different linear expansion coefficients (α 1 , α 2 ) between the glass transition temperature (Tg) until the sealing body 9 is taken out from the mold and reaches room temperature, that is, from the filling temperature to room temperature. Shrink.

一方基板２などは、充填温度から室温までの間にそれぞれの線膨張係数によって収縮する。この封止体９、リードフレーム６及び基板２などが互いに異なる線膨張係数で収縮するので、例えば、基板２が反るような応力が生じる。 On the other hand, the substrate 2 shrinks due to the respective linear expansion coefficient between the filling temperature and room temperature. Since the sealing body 9, the lead frame 6, the substrate 2, and the like contract with different linear expansion coefficients, for example, stress that causes the substrate 2 to warp is generated.

この基板２の反りが発生すると、例えば、レジスト３が基板２から剥離したり、基板２にクラックが生じたりして、ワイヤ４５が断線するなどの電子回路４の不具合が発生する。この応力の制御は、封止体９、リードフレーム６及び基板２の形状や厚さ、そしてそれぞれの線膨張係数などを組み合わせて行われるが、組み合わせのパターンが多くて困難である。 When the warpage of the substrate 2 occurs, for example, the resist 3 is peeled off from the substrate 2 or a crack is generated in the substrate 2, thereby causing a defect of the electronic circuit 4 such as the wire 45 being disconnected. This stress control is performed by combining the shapes and thicknesses of the sealing body 9, the lead frame 6 and the substrate 2, the respective linear expansion coefficients, and the like, but there are many combinations of patterns and is difficult.

そこで本実施形態のモジュール１は、この組み合わせを考慮すると共に、この基板２に作用する応力の一部を、応力緩和部８の破壊に消費させ、基板２に作用する応力を緩和するように構成されている。 Therefore, the module 1 according to the present embodiment is configured to take this combination into account and to consume a part of the stress acting on the substrate 2 for the destruction of the stress relaxation portion 8 and relax the stress acting on the substrate 2. Has been.

本実施形態の応力緩和部８は、一例として、絶縁性接着剤である。なお応力緩和部８の破壊とは、例えば、接着剤の剥離や接着剤のせん断を含むものとする。また剥離やせん断は、少なくとも一部の剥離や少なくとも一部のせん断を含むものとする。図１Ｂ及び２Ｅでは、応力緩和部８の破壊を波線で示している。 The stress relaxation part 8 of this embodiment is an insulating adhesive as an example. The destruction of the stress relaxation portion 8 includes, for example, peeling of the adhesive and shearing of the adhesive. Further, peeling and shearing include at least part of peeling and at least part of shearing. In FIG. 1B and 2E, destruction of the stress relaxation part 8 is shown with the wavy line.

なお以下に記載する線膨張係数は、主にＸ軸、Ｙ軸方向の線膨張係数であるものとする。また以下に記載する線膨張係数は、一例として、室温（２０℃）における値であるものとする。 The linear expansion coefficient described below is mainly the linear expansion coefficient in the X-axis and Y-axis directions. Moreover, the linear expansion coefficient described below shall be a value in room temperature (20 degreeC) as an example.

（基板２の構成）
基板２は、板形状を有している。この基板２は、例えば、プリント配線基板である。また基板２は、図１Ｂに示すように、レジスト３が表面２０及び裏面２１に形成されている。本実施形態の基板２は、一例として、ガラスエポキシ基板である。この基板２の線膨張係数は、一例として、およそ１０～２０ｐｐｍ／℃である。 (Configuration of substrate 2)
The substrate 2 has a plate shape. The substrate 2 is, for example, a printed wiring board. Further, as shown in FIG. 1B, the substrate 2 has a resist 3 formed on the front surface 20 and the back surface 21. The board | substrate 2 of this embodiment is a glass epoxy board | substrate as an example. For example, the linear expansion coefficient of the substrate 2 is approximately 10 to 20 ppm / ° C.

この基板２の表面２０には、電子回路４が形成されている。そして基板２には、複数のパッド４２と、複数のパッド４３と、が形成されている。パッド４２及びパッド４３は、一例として、銅メッキによって形成されている。 An electronic circuit 4 is formed on the surface 20 of the substrate 2. A plurality of pads 42 and a plurality of pads 43 are formed on the substrate 2. The pad 42 and the pad 43 are formed by copper plating as an example.

パッド４２は、ワイヤ４５を介してセンサ素子４０と電気的に接続されている。そしてパッド４３は、ワイヤ４５を介してリードフレーム６と電気的に接続されている。 The pad 42 is electrically connected to the sensor element 40 via the wire 45. The pad 43 is electrically connected to the lead frame 6 via the wire 45.

レジスト３は、特定の領域を保護するための被覆材である。このレジスト３は、例えば、印刷法によって形成されても良いし、フォトリソグラフィ法によって形成されても良い。 The resist 3 is a covering material for protecting a specific area. This resist 3 may be formed by, for example, a printing method or a photolithography method.

（電子回路４の構成）
電子回路４は、一例として、図１Ａ及び１Ｂに示すように、センサ素子４０と、複数の電子部品４１と、を備えている。 (Configuration of electronic circuit 4)
As an example, the electronic circuit 4 includes a sensor element 40 and a plurality of electronic components 41 as shown in FIGS. 1A and 1B.

センサ素子４０は、一例として、検出した物理量を電気的な量に変換するセンサ、センサの出力を増幅するアンプなどを備えた半導体素子である。センサ素子４０は、一例として、検出対象の接近に伴う磁場の変化を電気的な量に変換する磁気センサを備えている。センサ素子４０は、例えば、ワイヤ４５及びパッド４２を介して電子部品４１と電気的に接続されている。電子部品４１は、一例として、抵抗やコンデンサなどである。 As an example, the sensor element 40 is a semiconductor element including a sensor that converts a detected physical quantity into an electrical quantity, an amplifier that amplifies the output of the sensor, and the like. As an example, the sensor element 40 includes a magnetic sensor that converts a change in a magnetic field accompanying the approach of a detection target into an electrical quantity. The sensor element 40 is electrically connected to the electronic component 41 via a wire 45 and a pad 42, for example. The electronic component 41 is, for example, a resistor or a capacitor.

（リードフレーム５及びリードフレーム６の構成）
リードフレーム５及びリードフレーム６は、例えば、打ち抜きやエッチングなどにより、細長い板形状に形成されている。またリードフレーム５及びリードフレーム６は、例えば、アルミニウム、銅などの導電性を有する金属材料、又は真鍮などの合金材料を用いて形成される。このリードフレーム５及びリードフレーム６が一例として銅である場合、その線膨張係数は、およそ１７ｐｐｍ／℃である。 (Configuration of lead frame 5 and lead frame 6)
The lead frame 5 and the lead frame 6 are formed in an elongated plate shape by, for example, punching or etching. The lead frame 5 and the lead frame 6 are formed using, for example, a conductive metal material such as aluminum or copper, or an alloy material such as brass. When the lead frame 5 and the lead frame 6 are copper as an example, the linear expansion coefficient thereof is approximately 17 ppm / ° C.

なおリードフレーム５及びリードフレーム６は、例えば、錫、ニッケル、金、銀などの金属材料を用いたメッキ処理が表面に施されていても良い。 The lead frame 5 and the lead frame 6 may be subjected to plating treatment using a metal material such as tin, nickel, gold, or silver, for example.

リードフレーム５及びリードフレーム６は、基板２の裏面２１側に接合されている。言い換えるなら基板２は、リードフレーム５及びリードフレーム６の上に配置されている。リードフレーム５は、一例として、図１Ａ及び１Ｂに示すように、細長い板形状を有している。そして基板２には、複数のリードフレーム６が接合されている。本実施形態のリードフレーム６は、３つである。 The lead frame 5 and the lead frame 6 are joined to the back surface 21 side of the substrate 2. In other words, the substrate 2 is disposed on the lead frame 5 and the lead frame 6. As an example, the lead frame 5 has an elongated plate shape as shown in FIGS. 1A and 1B. A plurality of lead frames 6 are joined to the substrate 2. There are three lead frames 6 in the present embodiment.

リードフレーム６は、図１Ａに示すように、基部６０と、接合部６１と、を有している。この基部６０は、細長い形状を有し、一部が封止体９の一方の面から突出している。この突出した基部６０は、モジュール１が接続されるコネクタのメス端子に挿入されるコネクタ端子７となる。そして基部６０の先端は、先細り形状を有している。そして基部６０の表面には、ワイヤ４５が接合され、リードフレーム６と電子回路４とが電気的に接続される。 As shown in FIG. 1A, the lead frame 6 has a base 60 and a joint 61. The base portion 60 has an elongated shape, and a part thereof protrudes from one surface of the sealing body 9. The protruding base 60 becomes a connector terminal 7 to be inserted into the female terminal of the connector to which the module 1 is connected. The distal end of the base 60 has a tapered shape. And the wire 45 is joined to the surface of the base 60, and the lead frame 6 and the electronic circuit 4 are electrically connected.

接合部６１は、例えば、基部６０の幅よりも広い幅を有して矩形状を備えている。応力緩和部８は、この接合部６１に配置されている。 For example, the joining portion 61 has a width wider than the width of the base portion 60 and has a rectangular shape. The stress relaxation portion 8 is disposed at the joint portion 61.

（応力緩和部８の構成）
応力緩和部８は、絶縁性を有する材料から構成される接着剤である。この応力緩和部８は、封止樹脂が充填温度から室温に至る過程で破壊されるように構成される。なお応力緩和部８は、リードフレーム５、リードフレーム６及び基板２を一体として金型にセットできる程度の接合力があれば良い。 (Configuration of stress relaxation portion 8)
The stress relaxation part 8 is an adhesive composed of a material having an insulating property. The stress relaxation portion 8 is configured such that the sealing resin is broken in the process from the filling temperature to room temperature. The stress relieving portion 8 only needs to have a bonding strength that allows the lead frame 5, the lead frame 6, and the substrate 2 to be set together in a mold.

上述のように、一例として、基板２の線膨張係数がおよそ１０～２０ｐｐｍ／℃であり、リードフレーム６の線膨張係数がおよそ１７ｐｐｍ／℃であり、後述する封止体９の線膨張係数がおよそ４～７ｐｐｍ／℃であることから接着剤の線膨張係数は、１０ｐｐｍ／℃より小さいか、又は２０ｐｐｍ／℃より大きい方が好ましい。これは、接着剤が基板２やリードフレーム６と同じように追従して収縮しない、つまり線膨張係数の差が大きい方が破壊され易いからである。 As described above, as an example, the linear expansion coefficient of the substrate 2 is approximately 10 to 20 ppm / ° C., the linear expansion coefficient of the lead frame 6 is approximately 17 ppm / ° C., and the linear expansion coefficient of the sealing body 9 described later is Since it is approximately 4 to 7 ppm / ° C., the linear expansion coefficient of the adhesive is preferably smaller than 10 ppm / ° C. or larger than 20 ppm / ° C. This is because the adhesive does not follow and shrink in the same manner as the substrate 2 and the lead frame 6, that is, the one having a larger difference in linear expansion coefficient is likely to be broken.

そこで応力緩和部８は、一例として、上述の線膨張係数が得られるように、二酸化ケイ素、酸化マグネシウム、酸化アルミニウムなどを含む絶縁性接着剤として構成される。 Therefore, as an example, the stress relaxation portion 8 is configured as an insulating adhesive containing silicon dioxide, magnesium oxide, aluminum oxide, or the like so as to obtain the above-described linear expansion coefficient.

（封止体９の構成）
封止体９は、上述のように、トランスファモールド成形によって基板２、電子回路４、リードフレーム５、及びリードフレーム６の一方の端部、を覆って一体とするものである。この封止体９は、例えば、ＰＰＳ（Poly Phenylene Sulfide）樹脂やエポキシ樹脂を主成分に、シリカ（二酸化ケイ素）充填材などを加えた熱硬化性成形材料が硬化したものである。 (Configuration of sealing body 9)
As described above, the sealing body 9 covers and integrally covers the substrate 2, the electronic circuit 4, the lead frame 5, and one end of the lead frame 6 by transfer molding. For example, the sealing body 9 is obtained by curing a thermosetting molding material in which a PPS (Poly Phenylene Sulfide) resin or an epoxy resin is a main component and a silica (silicon dioxide) filler is added.

本実施形態では、熱硬化性成形材料としてエポキシ樹脂が使用される。このエポキシ樹脂の線膨張係数は、およそ４～７ｐｐｍ／℃である。封止体９は、例えば、主にセンサ素子４０などを光、熱及び湿度などの環境から保護している。 In this embodiment, an epoxy resin is used as the thermosetting molding material. The linear expansion coefficient of this epoxy resin is approximately 4 to 7 ppm / ° C. For example, the sealing body 9 mainly protects the sensor element 40 from an environment such as light, heat, and humidity.

以下にモジュール１の製造方法について説明する。 Below, the manufacturing method of the module 1 is demonstrated.

（モジュール１の製造方法）
図２Ａ～２Ｅは、実施形態に係るモジュールの製造方法を模式的に示す断面図である。この図２Ａ～２Ｅは、モジュール１の断面を模式的に示したものである。 (Manufacturing method of module 1)
2A to 2E are cross-sectional views schematically showing the module manufacturing method according to the embodiment. 2A to 2E schematically show a cross section of the module 1. FIG.

モジュール１の製造方法は、主に、電子回路が形成された基体を準備し、基体とリードフレームとを応力緩和部により接合し、電子回路とリードフレームとを電気的に接続し、リードフレームの一部、応力緩和部及び基体を封止樹脂によってモールド成形して封止体を形成し、封止体形成後、応力緩和部の少なくとも一部の剥離、及び／又は少なくとも一部のせん断を生じさせて基体に作用する応力を緩和させるものである。 The manufacturing method of the module 1 mainly includes preparing a base body on which an electronic circuit is formed, joining the base body and the lead frame with a stress relaxation portion, electrically connecting the electronic circuit and the lead frame, A part of the stress relaxation part and the substrate are molded with a sealing resin to form a sealing body. After the sealing body is formed, at least part of the stress relaxation part and / or at least part of shearing occurs. To relieve the stress acting on the substrate.

具体的には、図２Ａに示すように、電子回路４が形成された基板２を準備する。 Specifically, as shown in FIG. 2A, a substrate 2 on which an electronic circuit 4 is formed is prepared.

次に図２Ｂに示すように、基板２とリードフレーム５及びリードフレーム６とを応力緩和部８により接合する。 Next, as shown in FIG. 2B, the substrate 2, the lead frame 5, and the lead frame 6 are joined by the stress relaxation portion 8.

次に図２Ｃに示すように、電子回路４とリードフレーム６とを電気的に接続する。この接続は、ワイヤボンディング法に基づいて電子回路４のパッド４３とリードフレーム６とをワイヤ４５で接続することにより行われる。そして充填温度に過熱した金型に基板２をセットする。この充填温度は、一例として、およそ１８０℃である。 Next, as shown in FIG. 2C, the electronic circuit 4 and the lead frame 6 are electrically connected. This connection is performed by connecting the pad 43 of the electronic circuit 4 and the lead frame 6 with the wire 45 based on the wire bonding method. Then, the substrate 2 is set in a mold heated to the filling temperature. This filling temperature is approximately 180 ° C. as an example.

次に図２Ｄに示すように、リードフレーム６の一部、電子回路４、リードフレーム５、応力緩和部８及び基板２を封止樹脂によってトランスファモールド成形を行って封止体９を形成する。 Next, as shown in FIG. 2D, a part of the lead frame 6, the electronic circuit 4, the lead frame 5, the stress relaxation part 8, and the substrate 2 are transfer-molded with a sealing resin to form a sealing body 9.

次に図２Ｅに示すように、封止体９を形成した後、充填温度から室温に冷える過程において、応力緩和部８の少なくとも一部の剥離、及び／又は少なくとも一部のせん断を生じさせて、つまり応力緩和部８が破壊されて基板２に作用する応力を緩和させ、モジュール１を得る。 Next, as shown in FIG. 2E, after the sealing body 9 is formed, in the process of cooling from the filling temperature to room temperature, at least part of the stress relaxation part 8 is peeled and / or at least part of shear is generated. That is, the stress relaxing portion 8 is broken and the stress acting on the substrate 2 is relaxed, and the module 1 is obtained.

（実施形態の効果）
本実施形態に係るモジュール１は、基板２に作用する応力を緩和して電子回路４の不具合を抑制する。具体的には、モジュール１は、応力緩和部８が応力によって破壊され、基板２に作用する応力を緩和するように構成されるので、この構成を採用しない場合と比べて、基板２のクラックの発生やワイヤ４５の断線などに起因する電子回路４の不具合を抑制することができる。 (Effect of embodiment)
The module 1 according to the present embodiment alleviates the stress acting on the substrate 2 and suppresses the malfunction of the electronic circuit 4. Specifically, the module 1 is configured to relieve the stress acting on the substrate 2 when the stress relaxation portion 8 is broken by the stress, so that the crack of the substrate 2 is not compared with the case where this configuration is not adopted. The malfunction of the electronic circuit 4 due to the occurrence or disconnection of the wire 45 can be suppressed.

モジュール１は、応力緩和部８を意図的に破壊させることで応力を緩和するので、封止体９、リードフレーム６及び基板２の形状や厚さ、そしてそれぞれの線膨張係数などを組み合わせて応力を緩和する方法と比べて、容易に応力を緩和することができる。またモジュール１は、応力緩和部８を意図的に破壊させることで応力を緩和するので、組み合わせのシミュレーション回数や設計に要する時間などを抑制し、製造コストを抑制することができる。 Since the module 1 relieves stress by intentionally destroying the stress relieving part 8, the stress is obtained by combining the shapes and thicknesses of the sealing body 9, the lead frame 6 and the substrate 2, and the respective linear expansion coefficients. Compared with the method of relaxing the stress, the stress can be easily relaxed. Moreover, since the module 1 relieves stress by intentionally destroying the stress relieving portion 8, it is possible to suppress the number of simulations for the combination, the time required for design, and the like, thereby suppressing the manufacturing cost.

基板にクラックなどが生じない場合、応力が電子回路に作用し、センサ素子や電子部品の電気的な特性が変わる可能性がある。しかしモジュール１は、応力緩和部８によって応力を緩和するので、センサ素子４０や電子部品４１などの電気的な特性の変化を抑制することができる。 If no cracks or the like occur in the substrate, the stress acts on the electronic circuit, which may change the electrical characteristics of the sensor element and the electronic component. However, since the module 1 relieves stress by the stress relieving portion 8, changes in electrical characteristics of the sensor element 40 and the electronic component 41 can be suppressed.

以上、本発明のいくつかの実施形態及び変形例を説明したが、これらの実施形態及び変形例は、一例に過ぎず、請求の範囲に係る発明を限定するものではない。これら新規な実施形態及び変形例は、その他の様々な形態で実施されることが可能であり、本発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更などを行うことができる。また、これら実施形態及び変形例の中で説明した特徴の組合せの全てが発明の課題を解決するための手段に必須であるとは限らない。さらに、これら実施形態及び変形例は、発明の範囲及び要旨に含まれると共に、請求の範囲に記載された発明とその均等の範囲に含まれる。 As mentioned above, although some embodiment and modification of this invention were demonstrated, these embodiment and modification are only examples, and do not limit the invention which concerns on a claim. These novel embodiments and modifications can be implemented in various other forms, and various omissions, replacements, changes, and the like can be made without departing from the spirit of the present invention. In addition, not all the combinations of features described in these embodiments and modifications are essential to the means for solving the problems of the invention. Furthermore, these embodiments and modifications are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

１　モジュール
２　基板
３　レジスト
４　電子回路
５，６　リードフレーム
８　応力緩和部
９　封止体
２０　表面
２１　裏面
６０　基部
６１　接合部 DESCRIPTION OF SYMBOLS 1 Module 2 Board | substrate 3 Resist 4 Electronic circuit 5, 6 Lead frame 8 Stress relaxation part 9 Sealing body 20 Front surface 21 Back surface 60 Base part 61 Joint part

Claims (6)

電子回路が形成された基体と、
前記電子回路と電気的に接続されたリードフレームと、
前記リードフレームの一部、及び前記基体を封止する封止体と、
前記基体と前記リードフレームの間に介在し、前記基体に作用する応力を緩和する応力緩和部と、を有するモジュール。 A substrate on which an electronic circuit is formed;
A lead frame electrically connected to the electronic circuit;
A sealing body for sealing a part of the lead frame and the base body;
A module having a stress relieving portion interposed between the base and the lead frame to relieve stress acting on the base; 前記応力緩和部は、前記応力の作用による前記基体からの少なくとも一部の剥離、及び／又は少なくとも一部のせん断によって前記応力を緩和する、請求項１に記載のモジュール。 2. The module according to claim 1, wherein the stress relieving part relieves the stress by at least partly peeling from the base body and / or at least partly shearing by the action of the stress. 前記基体は、レジストが形成され、
前記応力緩和部は、前記レジストと前記リードフレームの間に介在する、請求項１又は２に記載のモジュール。 The base is formed with a resist,
The module according to claim 1, wherein the stress relaxation portion is interposed between the resist and the lead frame. 電子回路が形成された基体を準備し、
前記基体とリードフレームとを応力緩和部により接合し、
前記電子回路と前記リードフレームとを電気的に接続し、
前記リードフレームの一部、前記応力緩和部及び前記基体を封止樹脂によってモールド成形して封止体を形成し、
前記封止体形成後、前記応力緩和部の少なくとも一部の剥離、及び／又は少なくとも一部のせん断を生じさせて前記基体に作用する応力を緩和させる、モジュールの製造方法。 Preparing a substrate on which an electronic circuit is formed;
Bonding the base body and the lead frame by a stress relaxation part,
Electrically connecting the electronic circuit and the lead frame;
A part of the lead frame, the stress relaxation part, and the base are molded with a sealing resin to form a sealing body,
A method for manufacturing a module, wherein after the sealing body is formed, at least part of the stress relaxation part is peeled and / or at least part of shear is generated to relieve stress acting on the substrate. 前記応力緩和部は、線膨張係数が前記基体および前記リードフレームよりも小さいか又は大きい絶縁性接着剤からなる、請求項１～３の何れか１項に記載のモジュール。 The module according to any one of claims 1 to 3, wherein the stress relaxation portion is made of an insulating adhesive having a linear expansion coefficient smaller or larger than that of the base and the lead frame. 前記リードフレームは、前記基体の表面と電気的に接続される基部と前記基体の裏面と接合される接合部とを有し、
前記応力緩和部は、前記基体の前記裏面と前記接合部との間に形成される、請求項１～３の何れか１項に記載のモジュール。
  The lead frame has a base part electrically connected to the surface of the base body and a joint part joined to the back surface of the base body,
The module according to any one of claims 1 to 3, wherein the stress relaxation portion is formed between the back surface of the base and the joint portion.
PCT/JP2017/015742 2016-05-12 2017-04-19 Module and production method therefor Ceased WO2017195551A1 (en)

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