[go: up one dir, main page]

WO2017195067A1 - Dispositif d'affichage - Google Patents

Dispositif d'affichage Download PDF

Info

Publication number
WO2017195067A1
WO2017195067A1 PCT/IB2017/052517 IB2017052517W WO2017195067A1 WO 2017195067 A1 WO2017195067 A1 WO 2017195067A1 IB 2017052517 W IB2017052517 W IB 2017052517W WO 2017195067 A1 WO2017195067 A1 WO 2017195067A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
transistor
light
insulating layer
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2017/052517
Other languages
English (en)
Japanese (ja)
Inventor
山崎舜平
久保田大介
高橋圭
岩城裕司
池田寿雄
横山浩平
千田章裕
中野賢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of WO2017195067A1 publication Critical patent/WO2017195067A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/46—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character is selected from a number of characters arranged one behind the other
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Definitions

  • One embodiment of the present invention relates to a display device.
  • one embodiment of the present invention is not limited to the above technical field.
  • Technical fields of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, and driving methods thereof , Or a method for producing them, can be mentioned as an example.
  • a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics.
  • a transistor, a semiconductor circuit, an arithmetic device, a memory device, or the like is one embodiment of a semiconductor device.
  • an imaging device, an electro-optical device, a power generation device (including a thin film solar cell, an organic thin film solar cell, and the like) and an electronic device may include a semiconductor device.
  • liquid crystal display device including a liquid crystal element as one of display devices.
  • a liquid crystal element for example, an active matrix liquid crystal display device in which pixel electrodes are arranged in a matrix and a transistor is used as a switching element connected to each pixel electrode has attracted attention.
  • Patent Document 1 an active matrix liquid crystal display device using a transistor having a metal oxide as a channel formation region as a switching element connected to each pixel electrode is known.
  • Patent Document 2 an active matrix liquid crystal display device using a transistor having a metal oxide as a channel formation region as a switching element connected to each pixel electrode is known.
  • the transmissive liquid crystal display device uses a backlight such as a cold cathode fluorescent lamp or an LED (Light Emitting Diode), and the light from the backlight transmits the liquid crystal using the optical modulation action of the liquid crystal.
  • a backlight such as a cold cathode fluorescent lamp or an LED (Light Emitting Diode)
  • the light from the backlight transmits the liquid crystal using the optical modulation action of the liquid crystal.
  • a state that is output to the outside and a state that is not output are selected, bright and dark display is performed, and further, they are combined to perform image display.
  • the reflective liquid crystal display device utilizes the optical modulation action of the liquid crystal, and the external light, that is, the incident light is reflected by the pixel electrode and output to the outside of the device, and the incident light is not output to the outside of the device.
  • An image is displayed by selecting a state, displaying bright and dark, and combining them.
  • the reflective liquid crystal display device has an advantage of low power consumption because it does not use a backlight as compared with the transmissive liquid crystal display device.
  • a display device In an electronic device to which a display device is applied, it is required to reduce its power consumption.
  • a device using a battery as a power source such as a mobile phone, a smartphone, a tablet terminal, a smart watch, and a notebook personal computer, the power consumption of the display device occupies a large proportion. It has been.
  • portable electronic devices are required to have high visibility both in an environment with strong external light and in an environment with low external light.
  • the display device when a portable electronic device is dropped or put in a pocket of a pants, the display device may break. Therefore, the display device provided in the electronic device is required to be light and difficult to break.
  • An object of one embodiment of the present invention is to reduce power consumption of a display device. Another object is to improve display quality of a display device. Another object is to display an image with high display quality regardless of the use environment. Another object is to provide a display device that is light and difficult to break. Another object is to provide a display device that can be bent.
  • Another object is to provide a method for manufacturing a display device with high productivity.
  • One embodiment of the present invention includes a reflective liquid crystal element, a light-emitting element, a first transistor, a second transistor, a first insulating layer, a second insulating layer, and a first adhesive layer.
  • a display device The first insulating layer is located between the liquid crystal element and the first transistor. The first transistor is located between the first insulating layer and the first adhesive layer. The second transistor, the light emitting element, and the second insulating layer are located on the opposite side of the first transistor with the first adhesive layer interposed therebetween. The first transistor is electrically connected to the liquid crystal element. The second transistor is electrically connected to the light emitting element. The first transistor is provided on a surface of the first insulating layer on the first adhesive layer side.
  • the liquid crystal element has a function of reflecting light to the side opposite to the first insulating layer side, and the light-emitting element has a function of emitting light to the first adhesive layer side.
  • Another embodiment of the present invention is a reflective liquid crystal element, a light-emitting element, a first transistor, a second transistor, a first insulating layer, a second insulating layer, And an adhesive layer.
  • the first insulating layer is located between the liquid crystal element and the first transistor.
  • the first transistor is located between the first insulating layer and the first adhesive layer.
  • the second transistor and the light emitting element are located between the second insulating layer and the first adhesive layer.
  • the first transistor is electrically connected to the liquid crystal element.
  • the second transistor is electrically connected to the light emitting element.
  • the first transistor is provided on a surface of the first insulating layer on the first adhesive layer side.
  • the second transistor is provided on a surface of the second insulating layer on the first adhesive layer side.
  • the liquid crystal element has a function of reflecting light to the side opposite to the first insulating layer side, and the light-emitting element has a function of emitting light to the first adhesive layer side.
  • the second resin layer on the opposite side of the second insulating layer from the first adhesive layer. Furthermore, it is preferable to have a third resin layer on the opposite side of the liquid crystal element from the first adhesive layer. At this time, it is preferable that the second resin layer and the third resin layer have a region having a thickness of 0.1 ⁇ m or more and 3 ⁇ m or less.
  • the third resin layer preferably has an opening.
  • the light-emitting element preferably has a function of emitting light through the opening.
  • the opening portion preferably has a portion overlapping with the liquid crystal element, and the liquid crystal element preferably has a function of reflecting light through the opening portion.
  • the first substrate, the second substrate, the second adhesive layer, and the third adhesive layer are preferably located between the first substrate and the second insulating layer, and the third adhesive layer is preferably located between the liquid crystal element and the second substrate.
  • the first substrate and the second substrate each contain a resin.
  • Another embodiment of the present invention is a reflective liquid crystal element, a light-emitting element, a first transistor, a second transistor, a first insulating layer, a second insulating layer, And an adhesive layer.
  • the first insulating layer is located between the liquid crystal element and the first transistor.
  • the second insulating layer is located between the first adhesive layer and the second transistor.
  • the first transistor is located between the first insulating layer and the first adhesive layer.
  • the second transistor and the light-emitting element are located on the opposite side of the first transistor with the first adhesive layer interposed therebetween.
  • the first transistor is electrically connected to the liquid crystal element, and the second transistor is electrically connected to the light emitting element.
  • the first transistor is provided on a surface of the first insulating layer on the first adhesive layer side.
  • the second transistor is provided on a surface of the second insulating layer opposite to the first adhesive layer side.
  • the liquid crystal element has a function of reflecting light to the side opposite to the first insulating layer side, and the light-emitting element has a function of emitting light to the first adhesive layer side.
  • the second resin layer and the third resin layer have a region having a thickness of 0.1 ⁇ m or more and 3 ⁇ m or less.
  • the second resin layer preferably has a first opening
  • the third resin layer preferably has a second opening.
  • the light-emitting element preferably has a function of emitting light through the first opening and the second opening.
  • the second opening portion preferably has a portion overlapping with the liquid crystal element, and the liquid crystal element preferably has a function of reflecting light through the second opening portion.
  • the first substrate, the second substrate, the second adhesive layer, and the third adhesive layer it is preferable to include the first substrate, the second substrate, the second adhesive layer, and the third adhesive layer.
  • the second adhesive layer is located between the first substrate and the light emitting element
  • the third adhesive layer is located between the liquid crystal element and the second substrate.
  • the first substrate and the second substrate each contain a resin.
  • a channel is preferably formed in an oxide semiconductor.
  • the liquid crystal element preferably includes a first conductive layer, a second conductive layer, and a liquid crystal.
  • the first conductive layer is electrically connected to one of the source and the drain of the first transistor through an opening provided in the first insulating layer and has a function of reflecting visible light. Is preferred.
  • the liquid crystal is preferably positioned between the first conductive layer and the second conductive layer, and the second conductive layer preferably has a function of transmitting visible light.
  • the liquid crystal element preferably has a third conductive layer.
  • the third conductive layer preferably has a portion in contact with the first conductive layer between the first conductive layer and the liquid crystal and has a function of transmitting visible light.
  • the second conductive layer and the third conductive layer have a portion overlapping with the light-emitting element, and the light-emitting element has a function of emitting light through the third conductive layer and the second conductive layer. It is preferable.
  • the first resin layer located between the first conductive layer and the liquid crystal. At this time, it is preferable that the first resin layer has a region having a thickness of 5 nm to 1 ⁇ m. At this time, the first resin layer preferably has a function as an alignment film.
  • the first transistor preferably includes a first source electrode, a first drain electrode, and a first semiconductor layer.
  • the second transistor preferably includes a second source electrode, a second drain electrode, and a second semiconductor layer.
  • the first source electrode and the first drain electrode are provided in contact with the top surface and the side end portion of the first semiconductor layer, and the second source electrode and the second drain electrode are provided in the second semiconductor layer. It is preferable to be provided in contact with the upper surface and the side edge of the layer.
  • the first semiconductor layer includes a first insulating layer that covers a part of the top surface and the side edge of the first semiconductor layer, and a second insulating layer that covers a part of the top surface and the side edge of the second semiconductor layer. It is preferable. Further, the first source electrode and the first drain electrode are provided on the first insulating layer and electrically connected to the first semiconductor layer through an opening provided in the first insulating layer. The second source electrode and the second drain electrode are provided on the second insulating layer and electrically connected to the second semiconductor layer through an opening provided in the second insulating layer. Preferably it is.
  • the first source electrode and the first drain electrode are provided in contact with the upper surface and the side end portion of the first semiconductor layer, and the second source layer covers the part of the upper surface and the side end portion of the second semiconductor layer.
  • the second source electrode and the second drain electrode are provided on the second insulating layer and are connected to the second semiconductor layer through an opening provided in the second insulating layer. It is preferable that they are electrically connected.
  • the first insulating layer covering a part of the upper surface and the side end portion of the first semiconductor layer is provided, and the first source electrode and the first drain electrode are provided over the first insulating layer,
  • the second source electrode and the second drain electrode are electrically connected to the first semiconductor layer through an opening provided in the first insulating layer, and the second source electrode and the second drain electrode are connected to the upper surface and the side end portion of the second semiconductor layer. It is preferable to be provided in contact with.
  • the first transistor includes a first gate electrode and a second gate electrode, and the first gate electrode and the second gate electrode are provided to face each other with the first semiconductor layer interposed therebetween. It is preferable.
  • the second transistor includes a third gate electrode and a fourth gate electrode, and the third gate electrode and the fourth gate electrode are provided to face each other with the second semiconductor layer interposed therebetween. It is preferable.
  • power consumption of a display device can be reduced.
  • the display quality of the display device can be improved.
  • a display device that is light and difficult to break can be provided.
  • a display device that can be bent can be provided.
  • a method for manufacturing a display device with high productivity can be provided.
  • FIG. 3 shows a configuration example of a display device according to an embodiment.
  • 8A to 8D illustrate a method for manufacturing a display device according to Embodiment.
  • 8A to 8D illustrate a method for manufacturing a display device according to Embodiment.
  • 8A to 8D illustrate a method for manufacturing a display device according to Embodiment.
  • 8A to 8D illustrate a method for manufacturing a display device according to Embodiment.
  • 8A to 8D illustrate a method for manufacturing a display device according to Embodiment.
  • 8A to 8D illustrate a method for manufacturing a display device according to Embodiment.
  • 8A to 8D illustrate a method for manufacturing a display device according to Embodiment.
  • 8A to 8D illustrate a method for manufacturing a display device according to Embodiment.
  • 8A to 8D illustrate a method for manufacturing a display device according to Embodiment.
  • 8A to 8D illustrate a method for manufacturing a display device according to Embodiment.
  • 8A to 8D illustrate a method for manufacturing a display device according to Embodiment.
  • 3 shows a configuration example of a display device according to an embodiment. 3 shows a configuration example of a display device according to an embodiment. 3 shows a configuration example of a display device according to an embodiment.
  • 8A to 8D illustrate a method for manufacturing a display device according to Embodiment.
  • 8A to 8D illustrate a method for manufacturing a display device according to Embodiment.
  • 8A to 8D illustrate a method for manufacturing a display device according to Embodiment.
  • 8A to 8D illustrate a method for manufacturing a display device according to Embodiment. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment.
  • FIG. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment.
  • 3 shows a configuration example of a display device according to an embodiment.
  • 3 shows a configuration example of a display device according to an embodiment.
  • 3 shows a configuration example of a display device according to an embodiment.
  • 3 shows a configuration example of a display device according to an embodiment.
  • 3 shows a configuration example of a display device according to an embodiment.
  • FIG. 10 is a circuit diagram of a display device according to an embodiment.
  • FIG. 6 is a circuit diagram of a display device and a top view of a pixel according to an embodiment. 3 shows a configuration example of a display device according to an embodiment.
  • FIG. 3 shows a configuration example of a display device according to an embodiment.
  • 3 shows a configuration example of a display device according to an embodiment.
  • 3 shows a configuration example of a display device according to an embodiment.
  • 3 shows a configuration example of a display device according to an embodiment.
  • 3 shows a configuration example of a display device according to an embodiment.
  • 3 shows a configuration example of a display device according to an embodiment.
  • 3 shows a configuration example of a display device according to an embodiment.
  • the structural example of the display module which concerns on embodiment.
  • FIG. 8A and 8B illustrate a manufacturing process of a display device according to Example 2.
  • a transistor is a kind of semiconductor element, and can realize amplification of current and voltage, switching operation for controlling conduction or non-conduction, and the like.
  • the transistors in this specification include an IGFET (Insulated Gate Field Effect Transistor) and a thin film transistor (TFT: Thin Film Transistor).
  • the display device of one embodiment of the present invention has a structure in which a reflective liquid crystal element and a light-emitting element are stacked.
  • the reflective liquid crystal element can express gradation by controlling the amount of reflected light.
  • the light emitting element can express gradation by controlling the amount of light emitted.
  • the display device performs display using only reflected light, performs display using only light from the light emitting element, and displays using both reflected light and light from the light emitting element. It can be carried out.
  • the reflective liquid crystal element is provided on the viewing side (display surface side), and the light emitting element is provided on the side opposite to the viewing side.
  • the light-emitting element can emit light from the region where the reflective electrode included in the liquid crystal element is not provided to the viewing side.
  • the display device can be an active matrix display device in which a reflective liquid crystal element and a light-emitting element are electrically connected to transistors.
  • the display device includes a first element layer including a first transistor electrically connected to the light-emitting element, a second element layer including the light-emitting element, and a second transistor electrically connected to the liquid crystal element.
  • the display device can be made extremely light, and the display device can be made difficult to break.
  • the first resin layer and the second resin layer are extremely thin. More specifically, the thickness is preferably 0.1 ⁇ m or more and 3 ⁇ m or less. Therefore, even if it is the structure which laminated
  • the resin layer can be formed as follows, for example. That is, a low-viscosity thermosetting resin material is applied on a support substrate and cured by heat treatment to form a resin layer. Then, a structure is formed on the resin layer. Then, one surface of the resin layer is exposed by peeling between the resin layer and the support substrate.
  • a method for reducing the adhesion is to irradiate a laser beam.
  • a linear laser as the laser beam and scanning it.
  • the process time at the time of enlarging the area of a support substrate can be shortened.
  • the laser light an excimer laser having a wavelength of 308 nm can be suitably used.
  • thermosetting polyimide A typical example of a material that can be used for the resin layer is thermosetting polyimide. It is particularly preferable to use photosensitive polyimide. Since photosensitive polyimide is a material that is suitably used for a planarization film or the like of a display panel, a forming apparatus and a material can be shared. Therefore, no new device or material is required to realize the structure of one embodiment of the present invention.
  • the resin layer can be processed by performing exposure and development processing. For example, an opening can be formed or an unnecessary portion can be removed. Further, by optimizing the exposure method and the exposure conditions, it is possible to form an uneven shape on the surface. For example, a multiple exposure technique or an exposure technique using a halftone mask or a gray tone mask may be used.
  • a non-photosensitive resin material may be used.
  • a method of forming a resist mask or a hard mask on the resin layer to form an opening or an uneven shape can also be used.
  • the resin layer located on the light path from the light emitting element it is preferable to partially remove the resin layer located on the light path from the light emitting element. That is, an opening that overlaps with the light-emitting element is provided in the first resin layer. Thereby, the fall of the color reproducibility accompanying a part of light from a light emitting element being absorbed by the resin layer, and the fall of light extraction efficiency can be suppressed.
  • a recess may be formed in the resin layer so that a portion of the resin layer positioned on the light path from the light emitting element is thinner than other portions. That is, the resin layer may have two portions with different thicknesses, and the thin portion may overlap the light emitting element. Even with this configuration, absorption of light from the light emitting element by the resin layer can be reduced.
  • the resin layer positioned on the viewing side with respect to the fourth element layer.
  • color reproducibility and light extraction efficiency can be further improved.
  • the reflectance of the reflective liquid crystal element can be improved.
  • the following method can be used. That is, the portion that becomes the opening of the resin layer is partially formed thin, and the support substrate and the resin layer are peeled off by the method described above.
  • the resin layer is thinned by performing plasma treatment or the like on the surface from which the resin layer is peeled, an opening can be formed in a thin portion of the resin layer.
  • a light absorption layer is formed over a supporting substrate, a resin layer having an opening is formed over the light absorption layer, and a light-transmitting layer covering the opening is further formed.
  • the light absorption layer is a layer that emits a gas such as hydrogen or oxygen when heated by absorbing light. Therefore, by irradiating light from the support substrate side and releasing the gas from the light absorption layer, the adhesion between the light absorption layer and the support substrate or between the light absorption layer and the light transmitting layer is reduced. , Peeling can occur. Alternatively, the light absorption layer itself can be broken and peeled off.
  • an oxide semiconductor is preferably used as a semiconductor for forming a channel.
  • An oxide semiconductor can achieve a high on-state current and ensure high reliability even when the maximum temperature in the manufacturing process of the transistor is reduced (for example, 400 ° C. or lower, preferably 350 ° C. or lower).
  • high heat resistance is not required as a material used for the resin layer located on the formation surface of the transistor, so that the range of selection of materials can be widened. For example, it can also serve as a resin material used as a planarizing film.
  • LTPS Low Temperature Poly-Silicon
  • the highest temperature required for the manufacturing process of the transistor is higher than that in the case where the oxide semiconductor is used (for example, 500 ° C. or higher, 550 ° C. or higher, or 600 ° C. or higher). Therefore, high heat resistance is required for the resin layer located on the formation surface side of the transistor.
  • the resin layer is also irradiated with laser, and thus the resin layer needs to be formed relatively thick (for example, 10 ⁇ m or more, or 20 ⁇ m or more).
  • an oxide semiconductor has a wide band gap (for example, 2.5 eV or more, or 3.0 eV or more) and has a property of transmitting light. Therefore, in the step of separating the support substrate and the resin layer, even if laser light is irradiated to the oxide semiconductor, it is difficult to absorb, and thus the influence on the electrical characteristics can be suppressed. Therefore, the resin layer can be thinly formed as described above.
  • One embodiment of the present invention is a resin layer that is thinly formed using a low-viscosity photosensitive resin material typified by photosensitive polyimide, and an oxide semiconductor that can realize a transistor with excellent electrical characteristics even at low temperatures. By combining these, a display device with extremely high productivity can be realized.
  • the display device can include a first pixel including a light-emitting element and a first transistor, and a second pixel including a liquid crystal element and a second transistor.
  • a plurality of first pixels and second pixels are arranged in a matrix, respectively, and constitute a display unit.
  • the display device preferably includes a first driving unit that drives the first pixel and a second driving unit that drives the second pixel.
  • the first pixel and the second pixel are arranged in the display area at the same cycle. Furthermore, it is preferable that the first pixel and the second pixel are arranged in a mixed manner in the display region of the display device. Thereby, as will be described later, both the image displayed only with the plurality of first pixels, the image displayed only with the plurality of second pixels, and the plurality of first pixels and the plurality of second pixels. Each of the images displayed in can be displayed in the same display area.
  • the first pixel is composed of, for example, one pixel exhibiting white (W).
  • the second pixel preferably includes sub-pixels that exhibit light of three colors, for example, red (R), green (G), and blue (B).
  • R red
  • G green
  • B blue
  • a subpixel which exhibits white (W) or yellow (Y) light may be included.
  • the first pixel may include, for example, subpixels that emit light of three colors of red (R), green (G), and blue (B), and in addition to this, white (W) or You may have the subpixel which exhibits yellow (Y) light.
  • R red
  • G green
  • B blue
  • W white
  • Y yellow
  • a first mode in which an image is displayed with a first pixel a second mode in which an image is displayed with a second pixel, and an image is displayed with the first pixel and the second pixel.
  • the third mode can be switched.
  • the first mode since the display can be performed using only the reflected light, no light source is required. Therefore, this is a driving mode with extremely low power consumption. For example, it is effective when the illuminance of outside light is sufficiently high and the outside light is white light or light in the vicinity thereof.
  • the first mode is a display mode suitable for displaying character information such as books and documents.
  • the second mode since display can be performed using light from the light source, a vivid display with extremely high color reproducibility can be performed regardless of the illuminance and chromaticity of external light. For example, it is effective when the illuminance of outside light is extremely small, such as at night or in a dark room. Further, when the outside light is dark, the user may feel dazzled when performing bright display. In order to prevent this, it is preferable to perform display with reduced luminance in the second mode. Thereby, in addition to suppressing glare, power consumption can also be reduced.
  • the second mode is a mode suitable for displaying a vivid image or a smooth moving image.
  • display can be performed using both light from the light source and reflected light. Specifically, driving is performed so as to express one color by mixing light emitted by the first pixel and light emitted by the second pixel adjacent to the first pixel. It is possible to suppress power consumption more than in the second mode while displaying a brighter color reproducibility than in the first mode. For example, it is effective when the illuminance of outside light is relatively low, such as under room lighting or in the morning or evening hours, or when the chromaticity of outside light is not white.
  • the first transistor and the second transistor may be transistors having the same configuration, or may be different transistors.
  • a bottom-gate transistor has a gate electrode on the lower side (formation surface side) than the semiconductor layer.
  • a source electrode and a drain electrode are provided in contact with the upper surface and side end portions of the semiconductor layer.
  • a top gate transistor has a gate electrode above the semiconductor layer (on the side opposite to the formation surface).
  • the first source electrode and the first drain electrode are provided over the insulating layer that covers a part of the upper surface and the side end of the semiconductor layer, and the semiconductor layer is provided through the opening provided in the insulating layer. It is electrically connected to.
  • the transistor preferably includes a first gate electrode and a second gate electrode which are provided to face each other with a semiconductor layer interposed therebetween.
  • the reflective electrode of the reflective liquid crystal element also functions as a pixel electrode and is electrically connected to the second transistor.
  • the reflective electrode is characterized in that the surface located on the viewing side is uniformly flat. Further, one of the source and the drain of the second transistor is electrically connected to the back side (the side opposite to the viewing side) of the flat portion of the reflective electrode.
  • an insulating layer is provided so as to cover the reflective electrode, and the second transistor is provided on the surface of the insulating layer opposite to the reflective electrode.
  • the second transistor has a structure in which the reflective electrode is provided on the back surface side (formation surface side) with the insulating layer interposed therebetween.
  • One of the source and the drain of the second transistor is electrically connected to the reflective electrode through an opening provided in the insulating layer.
  • a third resin layer on the viewing side of the reflective electrode.
  • Such a structure can be manufactured by forming the counter electrode and the second transistor on the third resin layer formed on the supporting substrate and peeling at the interface between the supporting substrate and the third resin layer. .
  • the third resin layer is located between the reflective electrode and the liquid crystal, it is preferably used as an alignment film.
  • a top emission type light emitting element that emits light to the side opposite to the surface to be formed can be suitably applied.
  • the first transistor and the light emitting element are stacked in order from the side opposite to the viewing side.
  • the display device of one embodiment of the present invention has a structure in which the first transistor and the second transistor are provided to face each other in the vertical direction. That is, it can be expressed that the direction in which the plurality of films constituting the first transistor are stacked and the direction in which the plurality of films forming the second transistor are stacked are opposite to each other.
  • the display device 10 has a configuration in which an element layer 100a, an element layer 200a, an element layer 100b, and an element layer 200b are stacked in this order.
  • the display device 10 includes a substrate 11 on the back side (the side opposite to the viewing side) and a substrate 12 on the front side (viewing side). Further, the resin layer 101 is provided between the substrate 11 and the element layer 100a, and the resin layer 202 is provided between the substrate 12 and the element layer 200b.
  • the resin layer 101 and the substrate 11 are bonded together by an adhesive layer 51. Further, the resin layer 202 and the substrate 12 are bonded together by the adhesive layer 52.
  • the element layer 100 a includes the transistor 110 on the resin layer 101.
  • the element layer 200 a includes the light-emitting element 120 that is electrically connected to the transistor 110.
  • the element layer 100 b includes the transistor 210.
  • the element layer 200 b includes a liquid crystal element 220 that is electrically connected to the transistor 210.
  • the resin layer 202 is provided with an opening.
  • a region 31 illustrated in FIG. 1 is a region overlapping with the light emitting element 120 and overlapping with an opening of the resin layer 202.
  • the transistor 110 includes a conductive layer 111 functioning as a gate electrode, a part of the insulating layer 132 functioning as a gate insulating layer, a semiconductor layer 112, a conductive layer 113a functioning as one of a source electrode and a drain electrode, and a source electrode Or a conductive layer 113b functioning as the other of the drain electrodes.
  • the semiconductor layer 112 preferably contains an oxide semiconductor.
  • the insulating layer 133 and the insulating layer 134 are provided so as to cover the transistor 110.
  • the insulating layer 134 functions as a planarization layer.
  • the light emitting element 120 has a structure in which a conductive layer 121, an EL layer 122, and a conductive layer 123 are stacked.
  • the conductive layer 121 has a function of reflecting visible light
  • the conductive layer 123 has a function of transmitting visible light. Therefore, the light-emitting element 120 is a top-emission type (also referred to as top-emission type) light-emitting element that emits light to the side opposite to a formation surface.
  • the conductive layer 121 is electrically connected to the conductive layer 113b through an opening provided in the insulating layer 134 and the insulating layer 133.
  • the insulating layer 135 covers an end portion of the conductive layer 121 and has an opening so that a part of the surface of the conductive layer 121 is exposed.
  • the EL layer 122 and the conductive layer 123 are sequentially provided so as to cover the exposed portions of the insulating layer 135 and the conductive layer 121.
  • the light emitting element 120 is sealed with an adhesive layer 151.
  • the element layer 200a and the element layer 100b are bonded to each other with an adhesive layer 151.
  • a stacked structure including the insulating layer 131, the insulating layer 132, the insulating layer 133, the insulating layer 134, and the transistor 110 is referred to as an element layer 100a.
  • a stacked structure including the insulating layer 135 and the light-emitting element 120 is referred to as an element layer 200a.
  • the element layer 200a may include a coloring layer 152 and a light shielding layer 153 which will be described later.
  • an insulating layer 204 On the side opposite to the viewing side of the resin layer 202, an insulating layer 204, a liquid crystal element 220, a resin layer 201, a transistor 210, an insulating layer 231, an insulating layer 232, an insulating layer 233, an insulating layer 234, and the like are provided.
  • the liquid crystal element 220 includes a conductive layer 221a, a conductive layer 221b, a liquid crystal 222, and a conductive layer 223.
  • the liquid crystal 222 is sandwiched between the conductive layer 221b and the conductive layer 223.
  • the conductive layer 221a and the conductive layer 221b are provided in contact with each other and function as pixel electrodes.
  • the conductive layer 221a has a function of reflecting visible light and functions as a reflective electrode.
  • the conductive layer 221b has a function of transmitting visible light. Accordingly, the liquid crystal element 220 is a reflective liquid crystal element.
  • the periphery of the liquid crystal 222 is sealed with an adhesive layer in a region not shown.
  • An alignment film 224 is provided between the conductive layer 223 and the liquid crystal 222.
  • a resin layer 201 is provided between the conductive layer 221 b and the liquid crystal 222. The resin layer 201 functions as an alignment film.
  • An insulating layer 231 is provided to cover the conductive layer 221a.
  • the transistor 210 is formed with a surface of the insulating layer 231 opposite to the conductive layer 221a side as a formation surface.
  • the transistor 210 includes a conductive layer 211 functioning as a gate electrode, a part of the insulating layer 232 functioning as a gate insulating layer, a semiconductor layer 212, a conductive layer 213a functioning as one of a source electrode and a drain electrode, and a source electrode Or a conductive layer 213b functioning as the other of the drain electrodes.
  • the semiconductor layer 212 preferably contains an oxide semiconductor.
  • the insulating layer 233 and the insulating layer 234 are provided so as to cover the transistor 210.
  • the insulating layer 234 functions as a planarization layer.
  • the conductive layer 213b is electrically connected to the conductive layer 221a through an opening provided in the insulating layer 232 and the insulating layer 231.
  • the surface on the viewing side of the conductive layer 221a is flat, so that the portion can also function as part of the liquid crystal element 220, and the aperture ratio can be increased. it can.
  • the resin layer 201 functioning as an alignment film is provided so as to cover the conductive layer 221b.
  • the resin layer 201 has a function of supporting the conductive layer 221b and the like.
  • a conductive layer 223 and an alignment film 224 are stacked on the resin layer 201 side of the resin layer 202.
  • an insulating layer 204 is provided between the resin layer 202 and the conductive layer 223.
  • a coloring layer for coloring the reflected light of the liquid crystal element 220 may be provided between the conductive layer 223 and the substrate 12.
  • a light shielding layer that suppresses color mixture between adjacent pixels may be provided.
  • the insulating layer 204 is provided so as to cover the opening of the resin layer 202. A portion of the insulating layer 204 that overlaps with the opening of the resin layer 202 is provided in contact with the adhesive layer 52.
  • a colored layer 152 and a light shielding layer 153 are provided on the surface of the insulating layer 234 on the substrate 11 side.
  • the colored layer 152 is provided at a position overlapping the light emitting element 120.
  • the light shielding layer 153 has an opening in a portion overlapping with the light emitting element 120.
  • a stacked structure including the insulating layer 231, the insulating layer 232, the insulating layer 233, the insulating layer 234, and the transistor 210 is referred to as an element layer 100b.
  • a stacked structure including the conductive layer 221a, the conductive layer 221b, the resin layer 201, the liquid crystal 222, the alignment film 224, the conductive layer 223, and the insulating layer 204 is referred to as an element layer 200b.
  • the display device 10 includes a portion where the light emitting element 120 does not overlap with the conductive layer 221a functioning as a reflective electrode of the liquid crystal element 220 when viewed from above. Thereby, as shown in FIG. 1, the light emission 21 colored by the colored layer 152 is emitted from the light emitting element 120 to the viewing side. Further, in the liquid crystal element 220, the reflected light 22 in which the external light is reflected by the conductive layer 221a is emitted through the liquid crystal 222.
  • the light emission 21 emitted from the light emitting element 120 is emitted to the viewing side through the opening of the resin layer 202. Therefore, even when the resin layer 202 absorbs a part of visible light, the resin layer 202 does not exist on the optical path of the light emission 21, so that light extraction efficiency and color reproducibility can be improved. .
  • the conductive layer 221b is also disposed in a portion overlapping the light emitting element 120. Since the conductive layer 221b transmits visible light, even if the conductive layer 221b is located on the optical path of the light emission 21, it can be transmitted. By providing the conductive layer 221b in a wider range than the conductive layer 221a, the liquid crystal 222 in a region outside the region where the conductive layer 221a is provided can be aligned by applying an electric field. Therefore, the area of the region where the alignment defect of the liquid crystal 222 occurs can be reduced, and the aperture ratio can be increased.
  • the conductive layer 221b preferably has a transmittance of 60% or more, preferably 70% or more, and more preferably 80% or more over the entire range in the visible light region (for example, a wavelength range of 400 nm to 750 nm).
  • the conductive layer 221b is provided across both ends of the figure, but actually, it is provided in an island shape for each pixel and is electrically insulated between adjacent pixels.
  • the conductive layer 221b may be omitted when the influence of the alignment defects on the aperture ratio is small, such as when the distance between adjacent pixels is sufficiently large or when the area of the conductive layer 221a is sufficiently large. .
  • the conductive layer 121 functioning as a reflective electrode of the light-emitting element 120 is located on the viewer side with respect to the transistor 110. Therefore, the transistor 110 can be placed over the light-emitting element 120, and the degree of integration and the aperture ratio of the pixels can be increased.
  • the conductive layer 221a that functions as a reflective electrode of the liquid crystal element 220 is located on the viewing side with respect to the transistor 210. Therefore, the transistor 210 can be placed over the liquid crystal element 220, so that the degree of integration and the aperture ratio of the pixels can be increased.
  • the display device 10 has a configuration in which a transistor 210 and a transistor 110 are stacked so as to face each other.
  • the transistor 210 and the transistor 110 have a configuration in which the top and bottom are inverted.
  • the substrate 12 preferably functions as a polarizing plate or a circular polarizing plate.
  • a polarizing plate or a circular polarizing plate may be provided outside the substrate 12.
  • a color layer may be provided on the resin layer 202 side to enable color display.
  • the glass substrate etc. may be used for the board
  • the material containing resin it is preferable to use the material containing resin.
  • the display device 10 can be reduced in weight as compared with the case where glass or the like is used even if the thickness is the same.
  • the impact resistance of the display device can be improved, and a display device that is difficult to break can be realized.
  • the substrate 11 is a substrate located on the side opposite to the viewing side, the substrate 11 may not have translucency with respect to visible light. Therefore, a metal material can also be used. Since the metal material has high thermal conductivity and can easily conduct heat to the entire substrate, local temperature rise of the display device 10 can be suppressed.
  • a thin film (an insulating film, a semiconductor film, a conductive film, or the like) included in the display device is formed by a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, or a pulse laser deposition (PLD: Pulse Laser Deposition).
  • CVD chemical vapor deposition
  • PLD Pulse Laser Deposition
  • ALD Atomic Layer Deposition
  • the CVD method may be a plasma enhanced chemical vapor deposition (PECVD) method or a thermal CVD method.
  • PECVD plasma enhanced chemical vapor deposition
  • MOCVD metal organic chemical vapor deposition
  • Thin films (insulating films, semiconductor films, conductive films, etc.) that constitute display devices are spin coat, dip, spray coating, ink jet, dispense, screen printing, offset printing, doctor knife, slit coat, roll coat, curtain coat. It can be formed by a method such as knife coating.
  • the thin film constituting the display device when processing the thin film constituting the display device, it can be processed using a photolithography method or the like.
  • an island-shaped thin film may be formed by a film formation method using a shielding mask.
  • the thin film may be processed by a nanoimprint method, a sand blast method, a lift-off method, or the like.
  • the photolithography method there are the following two methods, for example. First, a photosensitive resist material is applied onto a thin film to be processed, exposed through a photomask, developed to form a resist mask, the thin film is processed by etching or the like, and the resist mask is formed. It is a method of removing. The other is a method in which a thin film having photosensitivity is formed and then exposed and developed to process the thin film into a desired shape.
  • light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or light obtained by mixing these.
  • ultraviolet light, KrF laser light, ArF laser light, or the like can be used.
  • exposure may be performed by an immersion exposure technique.
  • extreme ultraviolet light (EUV: Extreme-violet) or X-rays may be used as light used for exposure.
  • an electron beam can be used instead of the light used for exposure. It is preferable to use extreme ultraviolet light, X-rays, or an electron beam because extremely fine processing is possible. Note that a photomask is not required when exposure is performed by scanning a beam such as light or an electron beam.
  • etching the thin film For etching the thin film, a dry etching method, a wet etching method, a sand blasting method, or the like can be used.
  • the support substrate 61 is prepared.
  • a material that is rigid to such an extent that it can be easily transported and that is heat resistant to the temperature required for the manufacturing process can be used.
  • materials such as glass, quartz, ceramic, sapphire, organic resin, semiconductor, metal, or alloy can be used.
  • the glass for example, alkali-free glass, barium borosilicate glass, alumino borosilicate glass, or the like can be used.
  • a material to be the resin layer 101 is applied on the support substrate 61.
  • the application is preferably performed by spin coating because a thin resin layer 101 can be uniformly formed on a large substrate.
  • coating methods such as dip, spray coating, ink jet, dispensing, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, knife coating, etc. may be used.
  • the material has a polymerizable monomer that exhibits thermosetting (also referred to as thermopolymerization) in which polymerization proceeds by heat. Furthermore, the material preferably has photosensitivity. Moreover, it is preferable that the said material contains the solvent for adjusting a viscosity.
  • the material preferably contains a polymerizable monomer that becomes a polyimide resin, an acrylic resin, an epoxy resin, a polyamide resin, a polyimide amide resin, a siloxane resin, a benzocyclobutene resin, or a phenol resin after polymerization. That is, the formed resin layer 101 includes these resin materials.
  • a polymerizable monomer having an imide bond it is preferable to use a resin typified by a polyimide resin for the resin layer 101 because heat resistance and weather resistance can be improved.
  • the viscosity of the material used for coating is 5 cP or more and less than 500 cP, preferably the viscosity is 5 cP or more and less than 100 cP, more preferably 10 cP or more and 50 cP or less.
  • the lower the viscosity of the material the easier it is to apply.
  • the lower the viscosity of the material the more air bubbles can be prevented and the better the film can be formed.
  • the lower the viscosity of the material the thinner and more uniformly it can be applied, so that a thinner resin layer 101 can be formed.
  • a part can be removed by a photolithography method. For example, after applying the material, heat treatment for removing the solvent (also referred to as pre-bake treatment) is performed, and then exposure is performed. Subsequently, unnecessary portions can be removed by performing development processing.
  • pre-bake treatment heat treatment for removing the solvent
  • a method for forming the resin layer 101 having the opening will be described.
  • a photosensitive material is applied to form a thin film, and a heat treatment (pre-bake treatment) for removing the solvent and the like is performed.
  • a heat treatment pre-bake treatment
  • the material is exposed using a photomask and developed, whereby the resin layer 101 having an opening or a recess can be formed.
  • the resin layer 101 is formed by performing a heat treatment (post-bake treatment) for polymerizing the applied material.
  • the heating is preferably performed at a temperature higher than the maximum temperature required for a manufacturing process of the transistor 110 later.
  • the resin layer 101 by heating at such a temperature with the surface exposed, the gas that can be desorbed from the resin layer 101 can be removed, so that the gas is desorbed during the manufacturing process of the transistor 110. Can be suppressed.
  • the thickness of the resin layer 101 is preferably 0.01 ⁇ m or more and less than 10 ⁇ m, more preferably 0.1 ⁇ m or more and 3 ⁇ m or less, and further preferably 0.5 ⁇ m or more and 1 ⁇ m or less.
  • the thermal expansion coefficient of the resin layer 101 is preferably 0.1 ppm / ° C. or more and 20 ppm / ° C. or less, and more preferably 0.1 ppm / ° C. or more and 10 ppm / ° C. or less. As the thermal expansion coefficient of the resin layer 101 is lower, the transistor or the like can be prevented from being damaged by the stress accompanying expansion or contraction due to heating.
  • the resin layer 101 is not required to have high heat resistance because it can be formed at a low temperature. Therefore, the cost of the material can be reduced.
  • the heat resistance of the resin layer 101 and the like can be evaluated by, for example, a weight reduction rate by heating, specifically, a 5% weight reduction temperature.
  • the 5% weight reduction temperature of the resin layer 101 or the like can be set to 450 ° C. or lower, preferably 400 ° C. or lower, more preferably lower than 400 ° C., and still more preferably lower than 350 ° C.
  • the maximum temperature in the formation process of the transistor 110 and the like be 350 ° C. or lower.
  • an opening in the resin layer 101 By providing an opening in the resin layer 101 by the above method, the following configuration can be realized. For example, by disposing the conductive layer so as to cover the opening, an electrode partially exposed on the back surface side (also referred to as a back electrode or a through electrode) can be formed after the peeling step described later.
  • the electrode can also be used as an external connection terminal. Further, for example, by removing the resin layer 101 at a position overlapping the marker portion for bonding two support substrates and the like, the alignment accuracy can be increased.
  • the insulating layer 131 can be used as a barrier layer that prevents impurities contained in the resin layer 101 from diffusing into transistors and light-emitting elements to be formed later. Therefore, it is preferable to use a material having a high barrier property.
  • an inorganic insulating material such as a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used.
  • an inorganic insulating material such as a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used.
  • two or more of the above insulating films may be stacked.
  • a stacked film of a silicon nitride film and a silicon oxide film is preferably used from the resin layer 101 side.
  • the insulating layer 131 preferably covers the unevenness.
  • the insulating layer 131 may function as a planarization layer that planarizes the unevenness.
  • the insulating layer 131 is preferably formed using a stack of an organic insulating material and an inorganic insulating material.
  • Organic resins such as epoxy resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, etc. Can be used.
  • the insulating layer 131 is preferably formed at a temperature of, for example, room temperature to 400 ° C., preferably 100 ° C. to 350 ° C., more preferably 150 ° C. to 300 ° C.
  • the transistor 110 is formed over the insulating layer 131.
  • the transistor 110 an example in the case of manufacturing a bottom-gate transistor is shown.
  • a conductive layer 111 is formed over the insulating layer 131.
  • the conductive layer 111 can be formed by forming a conductive film, forming a resist mask, etching the conductive film, and then removing the resist mask.
  • an insulating layer 132 is formed.
  • an inorganic insulating film that can be used for the insulating layer 131 can be used.
  • the semiconductor layer 112 is formed.
  • the semiconductor layer 112 can be formed by forming a semiconductor film, forming a resist mask, etching the semiconductor film, and then removing the resist mask.
  • the semiconductor film is formed at a substrate temperature during film formation of room temperature to 300 ° C., preferably room temperature to 220 ° C., more preferably room temperature to 200 ° C., more preferably room temperature to 170 ° C.
  • room temperature indicates that the substrate is not intentionally heated.
  • the room temperature refers to a temperature range of 10 ° C. to 30 ° C., for example, and is typically 25 ° C.
  • an oxide semiconductor is preferably used.
  • an oxide semiconductor having a larger band gap than silicon is preferably used. It is preferable to use a semiconductor material with a wider band gap and lower carrier density than silicon because current in an off state of the transistor can be reduced.
  • the oxide semiconductor a material having a band gap of 2.5 eV or more, preferably 2.8 eV or more, more preferably 3.0 eV or more is preferably used.
  • the light is transmitted through the semiconductor film in irradiation with light such as laser light in a peeling step which will be described later, so that adverse effects on the electrical characteristics of the transistor are less likely to occur.
  • the semiconductor film used for one embodiment of the present invention is preferably formed by a sputtering method in an atmosphere containing one or both of an inert gas (eg, Ar) and an oxygen gas.
  • an inert gas eg, Ar
  • the substrate temperature during film formation is preferably from room temperature to 200 ° C., preferably from room temperature to 170 ° C.
  • the substrate temperature during film formation is preferably from room temperature to 200 ° C., preferably from room temperature to 170 ° C.
  • By increasing the temperature of the substrate more crystal parts having orientation are formed, and a semiconductor film having excellent electrical stability can be formed.
  • a transistor with excellent electrical stability can be realized.
  • by forming the film at a low substrate temperature or without intentional heating a semiconductor film with a low carrier ratio and a high carrier mobility can be formed. By using such a semiconductor film, a transistor exhibiting high field effect mobility can be realized.
  • the flow rate ratio of oxygen during film formation is 0% to less than 100%, preferably 0% to 50%, more preferably 0% to 33%, and still more preferably 0% to 15%. % Or less is preferable.
  • oxygen partial pressure oxygen partial pressure
  • a semiconductor film with high carrier mobility can be formed, and a transistor exhibiting higher field-effect mobility can be realized.
  • increasing the flow ratio of oxygen a semiconductor film with high crystallinity can be formed, and a semiconductor film with excellent electrical stability can be obtained.
  • An oxide target that can be used for forming a semiconductor film is not limited to an In—Ga—Zn-based oxide.
  • an In—M—Zn-based oxide M is Al, Y, or Sn). Can be applied.
  • a semiconductor film including a crystal part which is a semiconductor film
  • a sputtering target including a polycrystalline oxide having a plurality of crystal grains the sputtering target not including a polycrystalline oxide is used.
  • the sputtering target not including a polycrystalline oxide is used.
  • the crystal part having orientation in the thickness direction of the film also referred to as the film surface direction, the film formation surface, or the direction perpendicular to the film surface
  • a transistor using a semiconductor film in which oriented crystal parts are mixed has characteristics such as high stability of electric characteristics and easy miniaturization of a channel length.
  • a transistor to which a semiconductor film including only crystal parts having no orientation is applied can increase field effect mobility. Note that as described later, by reducing oxygen vacancies in the oxide semiconductor, a transistor having both high field-effect mobility and high stability of electric characteristics can be realized.
  • the heat treatment at a high temperature and the laser crystallization treatment that are necessary for LTPS are unnecessary, and the semiconductor layer 112 can be formed at an extremely low temperature. Therefore, the resin layer 101 can be formed thin.
  • a conductive layer 113a and a conductive layer 113b are formed.
  • the conductive layers 113a and 113b can be formed by forming a conductive film, forming a resist mask, etching the conductive film, and then removing the resist mask.
  • part of the semiconductor layer 112 that is not covered with the resist mask may be thinned by etching. It is preferable to use an oxide semiconductor film including a crystal part having orientation as the semiconductor layer 112 because this thinning can be suppressed.
  • the transistor 110 can be manufactured.
  • the transistor 110 is a transistor including an oxide semiconductor in the semiconductor layer 112 in which a channel is formed.
  • part of the conductive layer 111 functions as a gate
  • part of the insulating layer 132 functions as a gate insulating layer
  • the conductive layers 113a and 113b each function as either a source or a drain. To do.
  • the insulating layer 133 can be formed by a method similar to that of the insulating layer 132.
  • the insulating layer 133 is preferably formed at a temperature of, for example, room temperature to 400 ° C., preferably 100 ° C. to 350 ° C., more preferably 150 ° C. to 300 ° C. The higher the temperature, the denser the barrier film can be.
  • an oxide insulating film such as a silicon oxide film or a silicon oxynitride film formed at a low temperature as described above in an atmosphere containing oxygen is preferably used.
  • an insulating film that hardly diffuses and transmits oxygen such as a silicon nitride film is preferably stacked over the silicon oxide or silicon oxynitride film.
  • An oxide insulating film formed at a low temperature in an atmosphere containing oxygen can be an insulating film from which a large amount of oxygen is easily released by heating.
  • Oxygen can be supplied to the semiconductor layer 112 by performing heat treatment in a state where such an oxide insulating film that emits oxygen and an insulating film that hardly diffuses and transmits oxygen are stacked. As a result, oxygen vacancies in the semiconductor layer 112 and defects at the interface between the semiconductor layer 112 and the insulating layer 133 can be repaired, and the defect level can be reduced. Thereby, a highly reliable semiconductor device can be realized.
  • the transistor 110 and the insulating layer 133 covering the transistor 110 can be formed over the flexible resin layer 101.
  • a flexible device having no display element can be manufactured by separating the resin layer 101 and the support substrate 61 using a method described later.
  • a flexible device including a semiconductor circuit can be manufactured by forming a transistor 110, a capacitor, a resistor, a wiring, and the like in addition to the transistor 110.
  • the insulating layer 134 is a layer having a formation surface of a display element to be formed later, and thus is preferably a layer that functions as a planarization layer.
  • an organic insulating film or an inorganic insulating film that can be used for the insulating layer 131 can be used.
  • the insulating layer 134 is preferably made of a resin material having photosensitivity and thermosetting. In particular, it is preferable to use the same material for the insulating layer 134 and the resin layer 101. Thereby, it is possible to share the materials for the insulating layer 134 and the resin layer 101 and the apparatus for forming them.
  • the insulating layer 134 is preferably 0.01 ⁇ m or more and less than 10 ⁇ m, more preferably 0.1 ⁇ m or more and 3 ⁇ m or less, and further preferably 0.5 ⁇ m or more and 1 ⁇ m or less. preferable. By using a low-viscosity solution, it becomes easy to form the insulating layer 134 thinly and uniformly.
  • the conductive layer 121 is formed. Part of the conductive layer 121 functions as a pixel electrode.
  • the conductive layer 121 can be formed by forming a conductive film, forming a resist mask, etching the conductive film, and then removing the resist mask.
  • an insulating layer 135 covering the end portion of the conductive layer 121 is formed.
  • an organic insulating film or an inorganic insulating film that can be used for the insulating layer 131 can be used.
  • the insulating layer 135 is preferably made of a resin material having photosensitivity and thermosetting properties.
  • the same material is preferably used for the insulating layer 135 and the resin layer 101. Thereby, it is possible to share the materials for the insulating layer 135 and the resin layer 101 and the apparatus for forming them.
  • the insulating layer 135 is preferably 0.01 ⁇ m or more and less than 10 ⁇ m, more preferably 0.1 ⁇ m or more and 3 ⁇ m or less, and further preferably 0.5 ⁇ m or more and 1 ⁇ m or less. preferable. By using a low-viscosity solution, it becomes easy to form the insulating layer 135 thinly and uniformly.
  • an EL layer 122 and a conductive layer 123 are formed.
  • the EL layer 122 can be formed by a method such as a vapor deposition method, a coating method, a printing method, or a discharge method. In the case where the EL layer 122 is separately formed for each pixel, the EL layer 122 can be formed by an evaporation method using a shadow mask such as a metal mask or an inkjet method. In the case where the EL layer 122 is not formed for each pixel, an evaporation method that does not use a metal mask can be used. Here, an example in which a metal mask is not used for vapor deposition is shown.
  • the conductive layer 123 can be formed using a vapor deposition method, a sputtering method, or the like.
  • the light emitting element 120 can be formed as described above.
  • the light-emitting element 120 has a structure in which a conductive layer 121 partly functioning as a pixel electrode, an EL layer 122, and a conductive layer 123 partly functioning as a common electrode are stacked.
  • an insulating layer functioning as a barrier layer against impurities such as water may be formed so as to cover the conductive layer 123.
  • an inorganic insulating film for the insulating layer, for example, a film forming method such as a sputtering method, a plasma CVD method, an ALD method, or an evaporation method can be suitably used. Further, in order to prevent the light emitting element 120 from being damaged when the inorganic insulating film is formed, between the inorganic insulating film and the light emitting element 120, specifically, between the inorganic insulating film and the conductive layer 123, It is preferable to form an organic insulating film. At this time, the organic insulating film may be thin (for example, 100 nm or less), and may be formed using, for example, an evaporation method.
  • the element layer 100a and the element layer 200a can be formed.
  • the element layer 100a and the element layer 200a are supported by the support substrate 61.
  • a support substrate 63 is prepared, and a resin layer 201 is formed over the support substrate 63 (FIG. 3A).
  • the description of the support substrate 61 can be used for the support substrate 63.
  • the same method as that for the resin layer 101 can be used.
  • an insulating layer functioning as a barrier film may be formed over the resin layer 201.
  • the description of the insulating layer 131 can be referred to for a method and a material for forming the insulating layer.
  • a resist mask is formed, and after the conductive film is etched, the resist mask is removed to form the conductive layer 221b. Subsequently, after forming a conductive film to be the conductive layer 221a, a resist mask is formed. After the conductive film is etched, the resist mask is removed to form the conductive layer 221a.
  • a conductive film to be the conductive layer 221b and a conductive film to be the conductive layer 221a are successively formed, and then the conductive film to be the conductive layer 221a is processed, and then the conductive layer to be the conductive layer 221b.
  • the film may be processed.
  • the resist mask may be individually formed and processed, but an exposure technique using a multi-tone mask such as a halftone mask or a gray-tone mask, or multiple exposure using two or more photomasks. The use of technology is preferable because the number of steps can be reduced.
  • an insulating layer 231 is formed so as to cover the conductive layer 221a, the conductive layer 221b, and the resin layer 201 (FIG. 3C).
  • the description of the insulating layer 131 can be used for a method and a material for forming the insulating layer 231.
  • Transistor 210 is formed over the insulating layer 231.
  • the conductive layer 211 is formed over the insulating layer 232, the insulating layer 232 is formed so as to cover the conductive layer 211 and the insulating layer 231, and the semiconductor layer 212 is formed over the insulating layer 232.
  • the conductive layer 211, the insulating layer 232, and the semiconductor layer 212 can be formed by a method similar to that of the conductive layer 111, the insulating layer 132, or the semiconductor layer 112, respectively.
  • a conductive layer 213a and a conductive layer 213b are formed.
  • the conductive layers 213a and 213b can be formed by a method similar to that of the conductive layers 113a and 113b.
  • the conductive layer 113b is formed so as to fill the openings of the insulating layer 231 and the insulating layer 232, whereby the conductive layer 113b and the conductive layer 221a are electrically connected.
  • the transistor 210 can be formed.
  • the transistor 210 is a transistor including an oxide semiconductor in the semiconductor layer 212 in which a channel is formed.
  • part of the conductive layer 211 functions as a gate
  • part of the insulating layer 232 functions as a gate insulating layer
  • the conductive layers 213a and 213b each function as either a source or a drain. To do.
  • an insulating layer 233 and an insulating layer 234 are formed in this order so as to cover the transistor 210 (FIG. 3E).
  • the insulating layer 233 and the insulating layer 234 can be formed by a method similar to that of the insulating layer 133 or the insulating layer 134, respectively.
  • the element layer 100b can be formed.
  • the element layer 100b is supported by the support substrate 63.
  • a metal material or a resin material can be used for the light shielding layer 153.
  • a metal material after forming a conductive film, it can be formed by removing unnecessary portions using a photolithography method or the like.
  • a photosensitive resin material containing a metal material, a pigment or a dye when used, it can be formed by a photolithography method or the like.
  • the colored layer 152 can be processed into an island shape by a photolithography method or the like by using a photosensitive material.
  • the light shielding layer 153 has an opening that overlaps with the colored layer 152.
  • the light-blocking layer 153 is preferably provided so as to cover the transistor 210.
  • the light-blocking layer 153 can suppress external light and light from the light-emitting element 120 from reaching the semiconductor layer 212, which can improve reliability. it can.
  • the support substrate 61 and the support substrate 63 are bonded using the adhesive layer 151 so that the element layer 100a and the element layer 100b face each other. Then, the adhesive layer 151 is cured. Thereby, the light emitting element 120 can be sealed with the adhesive layer 151.
  • the adhesive layer 151 is preferably made of a curable material.
  • a resin that exhibits photocurability, a resin that exhibits reaction curability, a resin that exhibits thermosetting, or the like can be used.
  • the light from the light emitting element 120 may be blocked by the light shielding member such as the element layer 100b or the light shielding layer 153. Therefore, it is preferable that alignment markers are formed on the support substrate 63 and the support substrate 61, respectively.
  • laser light can be preferably used.
  • a flash lamp or the like may be used as long as the same energy as that of the laser beam can be irradiated.
  • the light 70 is preferably light having a wavelength that is at least partially transmitted through the support substrate 61 and absorbed by the resin layer 101.
  • the wavelength of the light 70 it is preferable to use light in a wavelength region from visible light to ultraviolet light.
  • light having a wavelength of 200 nm to 400 nm preferably light having a wavelength of 250 nm to 350 nm is preferably used.
  • an excimer laser having a wavelength of 308 nm because the productivity is excellent. Since the excimer laser is also used for laser crystallization in LTPS, an existing LTPS production line device can be used, and new equipment investment is not required, which is preferable.
  • a solid-state UV laser such as a UV laser having a wavelength of 355 nm, which is the third harmonic of the Nd: YAG laser
  • a CW (continuous wave) laser or a pulse laser may be used as the laser.
  • a short-time pulse laser such as nanosecond, picosecond, or femtosecond, or a pulse laser longer than that (for example, several hundred Hz or less) can be used.
  • the light 70 is scanned by moving the support substrate 61 and the light source relatively, and the light 70 is irradiated over a region to be peeled off.
  • the entire resin layer 101 can be peeled off, and there is no need to divide the outer peripheral portion of the support substrate 61 by scribe or the like in a subsequent separation step.
  • the region remains highly adhesive. Therefore, the resin layer 101 and the support substrate 61 are Is preferable because it can be prevented from separating.
  • the vicinity of the surface of the resin layer 101 on the side of the support substrate 61 or a part of the inside of the resin layer 101 is modified, the adhesion between the support substrate 61 and the resin layer 101 is lowered, and peeling easily It can be in a possible state.
  • Separation can be performed by applying a pulling force to the support substrate 61 in the vertical direction while the support substrate 63 is fixed to the stage.
  • a part of the upper surface of the support substrate 61 can be adsorbed and pulled upward to be peeled off.
  • the stage may have any configuration as long as the support substrate 63 can be fixed.
  • the stage may have an adsorption mechanism that can perform vacuum adsorption, electrostatic adsorption, or the like, or a mechanism that physically holds the support substrate 63. You may do it.
  • the support substrate 61 may be separated by applying a pulling force to the support substrate 63 in a vertical direction while the support substrate 61 is fixed to the stage.
  • the separation may be performed by pressing a drum-like member having adhesiveness on the surface against the upper surface of the support substrate 61 or the support substrate 63 and rotating the member. At this time, the stage may be moved in the peeling direction.
  • a notch portion may be formed in a part of the portion irradiated with the light to the resin layer 101 to trigger peeling.
  • the notch can be formed, for example, by using a sharp blade or a needle-like member, or by simultaneously cutting the support substrate 61 and the resin layer 101 by scribing.
  • FIG. 4C shows a case where the resin layer 101 is broken inside the resin layer 101 and the resin layer 101a which is a part of the resin layer 101 remains on the support substrate 61 side.
  • a part of the resin layer 101 may remain on the support substrate 61 side in the same manner. Note that in the case of peeling at the interface between the support substrate 61 and the resin layer 101, a part of the resin layer 101 may not remain on the support substrate 61 side.
  • the thickness of the resin layer 101 remaining on the support substrate 61 side can be, for example, about 100 nm or less, specifically about 40 nm or more and 70 nm or less.
  • the support substrate 61 can be reused by removing the remaining resin layer 101a.
  • the remaining resin layer 101a can be removed by ashing, fuming nitric acid, or the like.
  • the description of the adhesive layer 151 can be used for the adhesive layer 51.
  • the display device can be reduced in weight as compared with the case where glass or the like is used even if the thickness is the same.
  • the impact resistance of the display device can be improved, and a display device that is difficult to break can be realized.
  • the substrate 11 is a substrate located on the side opposite to the viewing side, the substrate 11 may not have translucency with respect to visible light. Therefore, a metal material can also be used. Since the metal material has high thermal conductivity and can easily conduct heat to the entire substrate, local temperature rise of the display device can be suppressed.
  • FIG. 5C shows an example in which the resin layer 201 is broken inside the resin layer 201 and the resin layer 201a which is a part of the resin layer 201 remains on the support substrate 63 side.
  • the thickness of the resin layer 201 after thinning can be made thinner than the resin layer 101, for example. More specifically, for example, it is preferably 1 nm or more and less than 3 ⁇ m, preferably 5 nm or more and 1 ⁇ m or less, more preferably 10 nm or more and 200 nm or less.
  • the thinning may be performed by any method that can etch the resin layer 201, and plasma treatment, dry etching, wet etching, or the like can be used.
  • the dry etching method is particularly preferable because of high uniformity.
  • the resin layer 201 contains an organic substance, it is particularly preferable to use plasma treatment (also referred to as ashing treatment) in an atmosphere containing oxygen.
  • plasma treatment also referred to as ashing treatment
  • a method may be used in which the material used for forming the thin film to be the resin layer 201 is sufficiently diluted with a solvent to reduce the viscosity, and the thinning of the resin layer 201 is not performed to reduce the thickness.
  • FIG. 6A shows a state in which a part of the upper portion of the resin layer 201 is etched and thinned by irradiating the upper surface of the resin layer 201 with plasma 80.
  • FIG. 6B shows a state during the rubbing process. As shown in FIG. 6B, in a state where the rotating rubbing roll 85 is pressed against the resin layer 201, the substrate 11 is slid as shown by the one-dot chain arrow in the figure to Uniaxial orientation processing can be performed.
  • the flatness of the surface may be lowered when the resin layer 201 is thinned.
  • a resin or the like that becomes an alignment film may be formed. Then, a rubbing treatment can be performed on the resin or the like to form an alignment film.
  • the substrate 11 side is fix the substrate 11 side to another support substrate in order to facilitate conveyance in the steps after the substrate 11 is bonded.
  • the substrate 11 and the supporting substrate can be fixed with an adhesive material, a double-sided tape, a silicone sheet, or a water-soluble adhesive.
  • the substrate 11 side is also fixed to another support substrate after the bonding step of the support substrate 64 described later.
  • the support substrate 64 is prepared.
  • the description of the support substrate 61 can be used for the support substrate 64.
  • the light absorption layer 103 is a layer that releases hydrogen, oxygen, or the like by absorbing the light 70 and generating heat in a subsequent irradiation process of the light 70.
  • a hydrogenated amorphous silicon (a-Si: H) film from which hydrogen is released by heating can be used as the light absorption layer 103.
  • the hydrogenated amorphous silicon film can be formed by, for example, a plasma CVD method including SiH 4 in a film forming gas. Further, in order to further include hydrogen, heat treatment may be performed in an atmosphere containing hydrogen after film formation.
  • an oxide film from which oxygen is released by heating can be used as the light absorption layer 103.
  • an oxide semiconductor film or an oxide conductor film is preferable because it has a narrower band gap and easily absorbs light than an insulating film such as a silicon oxide film.
  • the oxide conductor film can be formed by increasing the defect level or the impurity level of the oxide semiconductor film.
  • the above-described method for forming the semiconductor layer 112 and materials that can be used for a semiconductor layer described later can be used.
  • the oxide film can be formed by a plasma CVD method, a sputtering method, or the like in an atmosphere containing oxygen, for example.
  • an oxide semiconductor film is used, it is preferably formed by a sputtering method in an atmosphere containing oxygen.
  • heat treatment may be performed in an atmosphere containing oxygen after film formation.
  • an oxide insulating film may be used as the oxide film that can be used for the light absorption layer 103.
  • a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, a silicon oxynitride film, or the like can be used.
  • such an oxide insulating film is formed at a low temperature (for example, 250 ° C. or lower, preferably 220 ° C. or lower) in an oxygen-containing atmosphere, whereby an oxide insulating film containing excess oxygen is obtained.
  • a low temperature for example, 250 ° C. or lower, preferably 220 ° C. or lower
  • an oxygen-containing atmosphere for example, a sputtering method or a plasma CVD method can be used.
  • the resin layer 202 is formed by first applying a photosensitive material on the light absorption layer 103 to form a thin film, and performing a pre-bake treatment. Subsequently, the material is exposed using a photomask, and development processing is performed, whereby the resin layer 202 having an opening can be formed. Thereafter, a post-bake treatment is performed to sufficiently polymerize the material, and the gas in the film is removed.
  • an insulating layer 204 is formed so as to cover the resin layer 202 and the opening of the resin layer 202 (FIG. 7C). Part of the insulating layer 204 is provided in contact with the light absorption layer 103.
  • the insulating layer 204 can be used as a barrier layer that prevents impurities contained in the resin layer 202 from diffusing into a transistor, a liquid crystal element, or the like to be formed later. Therefore, it is preferable to use a material having a high barrier property.
  • the description of the insulating layer 131 can be used.
  • a conductive layer 223 is formed over the insulating layer 204.
  • the conductive layer 223 can be formed using a material that transmits visible light.
  • the conductive layer 223 can be formed by forming a conductive film. Note that the conductive layer 223 may be formed by a method such as a sputtering method using a shadow mask such as a metal mask so that the conductive layer 223 is not provided on the outer peripheral portion of the resin layer 202. Alternatively, unnecessary portions may be removed by etching by a photolithography method or the like after the conductive film is formed.
  • an alignment film 224 is formed over the conductive layer 223 (FIG. 7D).
  • the alignment film 224 can be formed by performing a rubbing process after forming a thin film of resin or the like.
  • the resin layer 201 and the resin layer 202 are bonded to each other at an outer peripheral portion with an adhesive layer (not shown).
  • an adhesive layer (not shown) for bonding them is formed on one or both of the resin layer 201 and the resin layer 202.
  • the adhesive layer is formed so as to surround a region where the pixels are arranged.
  • the adhesive layer can be formed by, for example, a screen printing method or a dispensing method.
  • a thermosetting resin, an ultraviolet curable resin, or the like can be used as the adhesive layer.
  • a resin that is cured by applying heat after being temporarily cured by ultraviolet rays may be used.
  • a resin having both ultraviolet curable properties and thermosetting properties may be used.
  • the liquid crystal 222 is dropped onto a region surrounded by the adhesive layer by a dispensing method or the like. Subsequently, the substrate 11 and the support substrate 64 are bonded so as to sandwich the liquid crystal 222, and the adhesive layer is cured. Bonding is preferably performed in a reduced-pressure atmosphere because air bubbles and the like can be prevented from being mixed between the substrate 11 and the support substrate 64.
  • the liquid crystal 222 may be dropped, granular gap spacers may be scattered on the area where the pixels are arranged or outside the area, or the liquid crystal 222 including the gap spacer may be dropped.
  • the liquid crystal 222 may be injected from a gap provided in the adhesive layer in a reduced pressure atmosphere after the substrate 11 and the support substrate 64 are bonded to each other.
  • the liquid crystal element 220 can be formed, and at the same time, the element layer 200b can be formed.
  • the support substrate 64 and the light absorption layer 103 are provided on the display surface side.
  • the light absorption layer 103 is irradiated with light 70 from the support substrate 64 side through the support substrate 64.
  • the irradiation method of the light 70 said description can be used.
  • the light 70 light having a wavelength that is at least partially transmitted through the support substrate 61 and absorbed by the light absorption layer 103 is selected and used.
  • the light absorption layer 103 is heated by the irradiation of the light 70, and hydrogen, oxygen, or the like is released from the light absorption layer 103.
  • the hydrogen or oxygen released at this time is released as a gas.
  • the released gas stays in the vicinity of the interface between the light absorption layer 103 and the resin layer 202 or in the vicinity of the interface between the light absorption layer 103 and the support substrate 64, and a force for peeling them off is generated.
  • the adhesiveness between the light absorption layer 103 and the resin layer 202 or the adhesiveness between the light absorption layer 103 and the support substrate 64 is lowered, so that it can be easily peeled off.
  • part of the gas released from the light absorption layer 103 may remain in the light absorption layer 103. Therefore, the light absorption layer 103 may become brittle and may be easily separated inside the light absorption layer 103.
  • a part of the resin layer 202 may be oxidized and embrittled by oxygen released from the light absorption layer 103. Thereby, it can be set in the state which is easy to peel in the interface of the resin layer 202 and the light absorption layer 103.
  • the adhesion between the interface between the light absorption layer 103 and the insulating layer 204 and the interface between the light absorption layer 103 and the support substrate 64 is reduced for the same reason as described above. Easy to peel. Alternatively, the light absorption layer 103 may become brittle and be easily separated.
  • the conductive layer 211 that functions as a gate electrode between the conductive layer 221a and the semiconductor layer 212 is used. Can be reflected or absorbed by the conductive layer 211. As a result, the electrical characteristics of the transistor 210 hardly change.
  • FIG. 9A illustrates an example in which separation occurs at the interface between the light absorption layer 103 and the resin layer 202 and at the interface between the light absorption layer 103 and the insulating layer 204.
  • a part of the light absorption layer 103 may remain in contact with the surfaces of the resin layer 202 and the insulating layer 204.
  • separation break
  • the entire light absorption layer 103 may remain in contact with the resin layer 202 and the insulating layer 204.
  • a dry etching method, a wet etching method, a sand blasting method, or the like can be used, but it is particularly preferable to use a dry etching method.
  • part of the resin layer 202 and part of the insulating layer 204 may be thinned by etching.
  • a light-transmitting material is used for the light-absorbing layer 103 or when the remaining light-absorbing layer is thin enough to have a light-transmitting property, the remaining light-absorbing layer is left as it is. Also good.
  • the resin layer 202 and the substrate 12 are bonded using the adhesive layer 52 (FIG. 9B).
  • the adhesive layer 52 the description of the adhesive layer 151 can be used.
  • the substrate 12 is a substrate located on the viewing side, a material having translucency with respect to visible light can be used.
  • the display device 10 shown in FIG. 1 can be manufactured.
  • a material to be the resin layer 202 is applied on the support substrate 64, and a pre-bake treatment is performed. Subsequently, exposure is performed using a photomask. At this time, a concave portion can be formed in the resin layer 202 by reducing the exposure amount below the condition for opening the resin layer 202. For example, there are methods such as exposing with shorter exposure time than exposure conditions for opening the resin layer 202, reducing the intensity of exposure light, shifting the focus, and forming the resin layer 202 thick.
  • an exposure technique using a halftone mask or a gray tone mask or a multiple exposure technique using two or more photomasks may be used.
  • the resin layer 202 having the recesses can be formed by performing a development process. After that, post bake processing is performed.
  • an insulating layer 204, a conductive layer 223, and an alignment film 224 are formed so as to cover the upper surface and the concave portion of the resin layer 202.
  • FIG. 10C is a cross-sectional view when the support substrate 64 and the substrate 11 are bonded together.
  • light 70 (not shown) is irradiated onto the resin layer 202 from the support substrate 64 side through the support substrate 64 to separate the support substrate 64 and the resin layer 202.
  • the above can be used for the light irradiation method and the separation method.
  • the resin layer 202 is thinned.
  • the above-described thinning method of the resin layer 201 can be used. By etching a part of the surface side of the resin layer 202 so that a part of the surface of the insulating layer 204 is exposed, a resin layer 202 having an opening is formed as shown in FIG. Can do.
  • FIG. 10D shows a state where a part of the upper part of the resin layer 202 is etched and thinned by irradiating with plasma 80.
  • the resin layer 202 may be left as it is without being etched, as shown in FIG. 10C or the like. Even in this configuration, since the resin layer 202 located on the light path from the light emitting element 120 is thinner than the other portions, light absorption is suppressed and light extraction efficiency can be increased. However, it is preferable to remove the resin layer 202 located on the light path from the light emitting element 120 to reduce the number of interfaces located on the path, thereby reducing reflection and scattering by the interface.
  • the resin layer 202 may remain in contact with the insulating layer 204 after the thinning process of the resin layer 202. Depending on the conditions, the resin layer 202 may be completely removed by etching or the like.
  • a resin layer 202a and a resin layer 202b having an opening are stacked and formed on a support substrate 64.
  • the resin layer 202a can be formed using a method in which the exposure and development processes are omitted in the step of forming the resin layer 202. At this time, pre-bake processing is not required.
  • the resin layer 202b having an opening can be formed in the same manner as the resin layer 202.
  • the previously formed resin layer 202a is sufficiently heated and polymerized. As a result, even when the same material is used for the resin layer 202a and the resin layer 202b, the resin layer 202a is dissolved in the solvent contained therein when a material to be the resin layer 202b to be formed later is applied. Can be suppressed.
  • an insulating layer 204, a conductive layer 223, and an alignment film 224 are formed over the resin layer 202a and the resin layer 202b (FIG. 11B).
  • FIG. 11C is a cross-sectional view after the support substrate 64 and the substrate 11 are bonded together.
  • the support layer 64 and the resin layer 202a are separated from each other by irradiating the resin layer 202a with light 70 (not shown) from the support substrate 64 side.
  • the above can be used for the light irradiation method and the separation method.
  • the resin layer 202a having an opening can be formed as shown in FIG. 11D by etching the resin layer 202a so that the surface of the insulating layer 204 is exposed.
  • the method for thinning the resin layer 201 described above can be used.
  • use of plasma treatment (ashing treatment) in an atmosphere containing oxygen is preferable because controllability can be improved and etching can be performed uniformly.
  • FIG. 11D shows a state where the resin layer 202a is etched and thinned by irradiating with plasma 80.
  • the material and the apparatus can be made common, so that productivity can be improved. Further, when different materials are used for these, the selectivity of the etching rate can be increased, so that the degree of freedom of processing conditions can be expanded.
  • the resin layer 202a may be left in the state shown in FIG. Even in this configuration, since the thickness of the resin layer 202 (specifically, the resin layer 202b) positioned on the light path from the light emitting element 120 is thinner than other portions, light absorption is suppressed, and light extraction efficiency is reduced. Can be increased.
  • the description of the support substrate 61 can be used.
  • a sheet-like resin or paper that functions as a carrier sheet for the substrate 12 may be used for the support substrate 65.
  • the adhesive layer 90 can be made of a material that prevents the support substrate 65 and the substrate 12 from being separated during the subsequent steps and can easily separate the support substrate 65 and the substrate 12. Typically, OCA (Optical Clear Adhesive), silicone, or the like can be used. Moreover, the adhesion layer 90 may not have translucency.
  • a conductive layer 223 and an alignment film 224 are stacked over the substrate 12 (FIG. 12B).
  • the conductive layer 223 and the alignment film 224 are formed by using a flexible film or the like for the substrate 12 because a high temperature is not required and high-precision patterning is unnecessary. It is also possible to form the layer 223 and the alignment film 224 directly on the substrate 12.
  • the support substrate 65 and the adhesive layer 90 may be left as they are. At this time, the support substrate 65 can be used as a protective substrate for protecting the display device.
  • the opening is provided in the resin layer positioned on the light path from the light emitting element 120, but the opening is also formed in the resin layer positioned on the light path in the reflective liquid crystal element 220. It may be provided.
  • FIG. 13A shows an example having a region 32 in addition to the region 31.
  • the region 32 is a region overlapping the opening of the resin layer 202 and the liquid crystal element 220.
  • FIG. 13A illustrates an example in which the resin layer 202 has one opening including both the light-emitting element 120 and the liquid crystal element 220; however, the opening overlapping the light-emitting element 120 and the liquid crystal A configuration may be employed in which an opening overlapping with the element 220 is provided separately.
  • FIG. 13B shows an example in which the resin layer is not provided on the substrate 12 side. Further, the structure illustrated in FIG. 13B is different from the structure illustrated in FIG. 12D in that the adhesive layer 52 and the insulating layer 204 are provided.
  • the insulating layer 204 which functions as a barrier layer is provided, even when a resin material or the like is used for the substrate 12, impurities are diffused into the liquid crystal 222 or the like. Can be prevented.
  • a resin layer 202, an insulating layer 204, a conductive layer 223, an alignment film 224, and the like are formed over a supporting substrate and bonded to the substrate 11. This can be realized by removing them.
  • a flat resin layer can be formed by a method in which exposure and development processing are omitted.
  • FIG. 14A illustrates an example in which the transistor 210 is not covered and the insulating layer 234 functioning as a planarization film is not provided as compared with FIG.
  • a coloring layer 152 and a light shielding layer 153 are provided over the insulating layer 233 (downward in the drawing).
  • the manufacturing cost can be reduced as compared with FIG. Further, since the insulating layer 234 is not provided, the thickness of the display device 10 can be further reduced. In addition, the light emitting element 120 can be brought closer to the viewer side, and viewing angle characteristics can be improved.
  • the light-blocking layer 153 can prevent light emission 21 emitted from the light-emitting element 120 from entering the semiconductor layer 212 of the transistor 210 and suppress variation in electrical characteristics of the transistor 210. can do.
  • FIG. 14B shows that the substrate 11, the adhesive layer 51, the resin layer 101, and the insulating layer 131 are replaced with the substrate 11 a as compared with the structure shown in FIG. The difference is mainly in that a substrate 12a is provided instead of the adhesive layer 52, the resin layer 202, and the insulating layer 204.
  • substrates in which impurities such as water, hydrogen, and oxygen are difficult to diffuse can be used. Accordingly, it is not necessary to provide an insulating layer having a high barrier property between the substrate 11a and the transistor 110 and between the substrate 12a and the liquid crystal element 220, so that the production cost can be reduced.
  • a substrate having poor flexibility may be used as one or both of the substrate 12a and the substrate 11a.
  • a light-transmitting substrate such as a glass substrate is used as the substrate 12a.
  • a substrate that does not have translucency, such as a metal substrate, may be used as the substrate 11a.
  • the substrate 12a and the substrate 11a can be used as a support substrate, so that the conveyance during the manufacturing process can be facilitated.
  • the substrate 12a or the substrate 11a it is preferable to use a substrate having a thickness of 0.3 mm or more, preferably 0.5 mm or more because conveyance becomes easy.
  • substrate 11a you may make it thin to less than 0.3 mm by grind
  • the alignment of the substrate 12a and the substrate 11a can be performed more easily than in the case where the substrates having flexibility are bonded to each other.
  • the accuracy can be increased, and the display device can have higher definition. For example, a display device having a definition exceeding 500 ppi can be realized.
  • the manufacturing process can be greatly simplified, so that the manufacturing cost can be reduced.
  • the light-emitting element 120 illustrated in FIG. 14B illustrates an example in which the EL layer 122 is formed by a so-called separate coloring method so that pixels of different colors are divided. Note that although the entire EL layer 122 is divided between pixels here, at least one of the stacked films constituting the EL layer 122 is divided between the pixels and the others are connected. Good.
  • 14B illustrates an example of a structure in which the colored layer 152 is not provided because the light-emitting element 120 can emit different colors of light for each pixel. By not providing the colored layer 152, the extraction efficiency can be increased.
  • an insulating layer 124 is provided so as to cover the conductive layer 123.
  • the insulating layer 124 functions as a barrier layer that suppresses diffusion of impurities such as water into the light-emitting element 120.
  • the display device includes a first element layer including a first transistor electrically connected to the light emitting element, a second element layer including the light emitting element, and a second transistor electrically connected to the liquid crystal element.
  • a third element layer and a fourth element layer including a liquid crystal element are included. Then, the second element layer, the first element layer, the third element layer, and the fourth element layer are laminated in this order from the side opposite to the visual recognition. Further, an adhesive layer is provided between the first element layer and the third element layer to bond them.
  • a resin layer closer to the viewing side than the fourth element layer.
  • the display device can be made extremely light, and the display device can be made difficult to break.
  • a resin layer may be provided between the first element layer and the third element layer and between the third element layer and the fourth element layer.
  • the light emitting element a bottom emission type light emitting element that emits light toward the surface to be formed can be suitably applied.
  • the first transistor and the light emitting element are stacked in order from the viewing side.
  • the first element layer including the first transistor is bonded to the third element layer including the second transistor with an adhesive layer. Accordingly, the light emitting surface of the light emitting element can be disposed at a position close to the display surface side, and a display device having excellent viewing angle characteristics can be realized.
  • the display device of one embodiment of the present invention has a structure in which the first transistor and the second transistor are provided in the same direction with respect to the vertical direction. That is, it can also be expressed that the direction in which the plurality of films constituting the first transistor are stacked and the direction in which the plurality of films forming the second transistor are stacked are the same.
  • FIG. 15 is a schematic sectional view of the display device 10.
  • the display device 10 has a configuration in which an element layer 200a, an element layer 100a, an element layer 100b, and an element layer 200b are stacked in this order.
  • An adhesive layer 50 is provided between the element layer 100a and the element layer 100b.
  • the display device 10 includes a substrate 11 on the back side (the side opposite to the viewing side) and a substrate 12 on the front side (viewing side). Further, the resin layer 101 is provided between the element layer 100a and the adhesive layer 50, and the resin layer 202 is provided between the substrate 12 and the element layer 200b.
  • the substrate 11 is bonded with an adhesive layer 151 that covers the light emitting element 120.
  • the resin layer 101 and the element layer 100b (specifically, the insulating layer 234) are bonded together by the adhesive layer 50. Further, the resin layer 202 and the substrate 12 are bonded together by the adhesive layer 52.
  • the element layer 100 a includes a transistor 110 on the substrate 11 side of the resin layer 101.
  • the element layer 200 a includes the light-emitting element 120 that is electrically connected to the transistor 110.
  • the element layer 100 b includes the transistor 210.
  • the element layer 200 b includes a liquid crystal element 220 that is electrically connected to the transistor 210.
  • a region 31 illustrated in FIG. 1 is a region that overlaps with the light-emitting element 120 and a region that overlaps the opening of the resin layer 101 and the opening of the resin layer 202.
  • a transistor 110, a light emitting element 120, an insulating layer 131, an insulating layer 132, an insulating layer 133, an insulating layer 134, an insulating layer 135, and the like are provided on the substrate 11 side of the resin layer 101.
  • the light emitting element 120 has a structure in which a conductive layer 121, an EL layer 122, and a conductive layer 123 are stacked.
  • the conductive layer 121 has a function of transmitting visible light
  • the conductive layer 123 has a function of reflecting visible light. Therefore, the light-emitting element 120 is a bottom emission type (also referred to as a bottom emission type) light-emitting element that emits light toward a surface to be formed.
  • an insulating layer 124 is provided so as to cover the conductive layer 123.
  • the insulating layer 124 functions as a barrier layer that suppresses diffusion of impurities such as moisture into the light-emitting element 120.
  • the insulating layer 124 preferably includes an inorganic insulating film.
  • the inorganic insulating film may be a single layer or a plurality of inorganic insulating films may be stacked. Alternatively, a stacked structure of an inorganic insulating film and an organic insulating film may be used.
  • the insulating layer 124 is provided, it is not necessary to use a material having a high barrier property for the adhesive layer 151 or the substrate 11, so that the degree of freedom in selecting the material can be increased.
  • the adhesive layer 151 and the substrate 11 can be thinned.
  • An opening is provided in the resin layer 101 located on the viewing side with respect to the light emitting element 120.
  • the light emitting element 120 is disposed so as to overlap with the opening.
  • the insulating layer 131 is provided so as to cover the opening of the resin layer 101. A portion of the insulating layer 131 that overlaps with the opening of the resin layer 101 is in contact with the adhesive layer 50.
  • a colored layer 152 that overlaps with the light-emitting element 120 is provided between the insulating layer 133 and the insulating layer 134.
  • the colored layer 152 has a region overlapping with the opening of the resin layer 101.
  • a light-blocking layer having an opening in a portion overlapping with the light-emitting element 120 may be provided between the insulating layer 133 and the insulating layer 134.
  • Element layer 100b, Element layer 200b The structure example 1 can be used for the structure of the element layer 100b and the element layer 200b.
  • the display device 10 has a configuration in which a transistor 210 and a transistor 110 are stacked so as to face each other in the same vertical direction.
  • the support substrate 61 is prepared.
  • a light absorption layer 103a is formed over the supporting substrate 61 (FIG. 16A).
  • the light absorption layer 103a can be used for the light absorption layer 103a.
  • the transistor 110 is formed over the insulating layer 131.
  • the transistor 110 an example in the case of manufacturing a bottom-gate transistor is shown.
  • a colored layer 152 is formed over the insulating layer 132.
  • the coloring layer 152 can be processed into an island shape by a photolithography method or the like by using a photosensitive material.
  • a light shielding layer may be formed on the insulating layer 132.
  • the light-blocking layer has an opening that overlaps with the colored layer 152 and the light-emitting element 120.
  • the light-blocking layer may be provided so as to cover the transistor 110.
  • a metal material or a resin material can be used for the light shielding layer.
  • a metal material after forming a conductive film, it can be formed by removing unnecessary portions using a photolithography method or the like.
  • a photosensitive resin material containing a metal material, a pigment or a dye when used, it can be formed by a photolithography method or the like.
  • the insulating layer 134 is a layer that has a formation surface of the light-emitting element 120 to be formed later, and thus is preferably a layer that functions as a planarization layer.
  • the conductive layer 121 is formed. Part of the conductive layer 121 functions as a pixel electrode. Next, as illustrated in FIG. 16E, an insulating layer 135 that covers an end portion of the conductive layer 121 is formed. Subsequently, an EL layer 122 and a conductive layer 123 are formed.
  • the light-emitting element 120 can be formed (FIG. 16F).
  • the light-emitting element 120 has a structure in which a conductive layer 121 partly functioning as a pixel electrode, an EL layer 122, and a conductive layer 123 partly functioning as a common electrode are stacked.
  • an insulating layer 124 is formed so as to cover the conductive layer 123.
  • an inorganic insulating film is used for the insulating layer 124, for example, a film forming method such as a sputtering method, a plasma CVD method, an ALD method, or an evaporation method can be suitably used.
  • a film forming method such as a sputtering method, a plasma CVD method, an ALD method, or an evaporation method can be suitably used.
  • an organic insulating film may be thin (for example, 100 nm or less), and may be formed using, for example, an evaporation method.
  • the element layer 100a and the element layer 200a can be manufactured.
  • the element layer 100a and the element layer 200a are supported by the support substrate 61.
  • the adhesiveness between the light absorption layer 103a and the resin layer 101 or the adhesiveness between the light absorption layer 103a and the support substrate 61 is lowered, and can be easily peeled.
  • FIG. 17D shows an example in which peeling occurs at the interface between the light absorption layer 103a and the resin layer 101 and at the interface between the light absorption layer 103a and the insulating layer 131.
  • the support substrate 61 and the resin layer 101 can be separated.
  • the element layer 100a and the element layer 200a are provided on one surface side of the resin layer 101, and the other surface is exposed.
  • a support substrate 63 is prepared, and a resin layer 201 is formed over the support substrate 63 (FIG. 18A).
  • an insulating layer 231 is formed so as to cover the conductive layer 221a, the conductive layer 221b, and the resin layer 201 (FIG. 18C).
  • Transistor 210 is formed over the insulating layer 231.
  • Insulating Layer 233 and Insulating Layer 234 are formed in this order so as to cover the transistor 210 (FIG. 18E).
  • the element layer 100b can be formed.
  • the element layer 100b is supported by the support substrate 63.
  • the substrate 11 and the support substrate 63 are bonded using the adhesive layer 50.
  • the adhesive layer 50 the description of the adhesive layer 151 can be used.
  • FIG. 19C shows an example in which the resin layer 201 is broken inside the resin layer 201 and the resin layer 201a which is a part of the resin layer 201 remains on the support substrate 63 side.
  • the thickness of the resin layer 201 after thinning can be made thinner than the resin layer 101, for example. More specifically, for example, it is preferably 1 nm or more and less than 3 ⁇ m, preferably 5 nm or more and 1 ⁇ m or less, more preferably 10 nm or more and 200 nm or less.
  • FIG. 20A shows a state in which a part of the upper portion of the resin layer 201 is etched and thinned by irradiating the upper surface of the resin layer 201 with plasma 80.
  • FIG. 20B shows a state during the rubbing process. As shown in FIG. 20B, in a state where the rotating rubbing roll 85 is pressed against the resin layer 201, the substrate 11 is slid as shown by the one-dot chain line arrow in FIG. Uniaxial orientation processing can be performed.
  • the support substrate 64 is prepared.
  • a light absorption layer 103b is formed over the supporting substrate 64 (FIG. 21A).
  • the description of the light absorption layer 103a can be used for the light absorption layer 103b.
  • an insulating layer 204 is formed so as to cover the resin layer 202 and the opening of the resin layer 202 (FIG. 21C). Part of the insulating layer 204 is provided in contact with the light absorption layer 103b.
  • an alignment film 224 is formed over the conductive layer 223 (FIG. 21D).
  • the alignment film 224 can be formed by performing a rubbing process after forming a thin film of resin or the like.
  • FIG. 23A illustrates an example in which separation occurs at the interface between the light absorption layer 103 b and the resin layer 202 and at the interface between the light absorption layer 103 b and the insulating layer 204.
  • the resin layer 202 and the substrate 12 are bonded using the adhesive layer 52 (FIG. 23B).
  • the adhesive layer 52 the description of the adhesive layer 151 can be used.
  • the substrate 12 is a substrate located on the viewing side, a material having translucency with respect to visible light can be used.
  • the display device 10 shown in FIG. 15 can be manufactured.
  • a material to be the resin layer 101 is applied on the support substrate 61, and a pre-bake treatment is performed. Subsequently, exposure is performed using a photomask. At this time, a concave portion can be formed in the resin layer 101 by reducing the exposure amount below the condition for opening the resin layer 101. For example, exposure may be performed with a shorter exposure time than the conditions for opening the resin layer 101, the intensity of exposure light may be reduced, the focus may be shifted, and the resin layer 101 may be formed thicker.
  • an exposure technique using a halftone mask or a gray tone mask or a multiple exposure technique using two or more photomasks may be used.
  • the resin layer 101 in which the concave portions are formed can be formed by performing a development process. After that, post bake processing is performed.
  • the insulating layer 131, the transistor 110, the light emitting element 120, and the like are formed over the resin layer 101 by the same method as described above.
  • the insulating layer 131 is provided to cover the concave portion of the resin layer 101.
  • the support substrate 61 and the substrate 11 are bonded together by the adhesive layer 151.
  • the resin layer 101 is irradiated with light 70 from the support substrate 61 side through the support substrate 61.
  • the support substrate 61 and the resin layer 101 are separated.
  • the above can be used for the irradiation method and separation method of the light 70.
  • the resin layer 101 is not provided with an opening, there is no portion where the support substrate 61 and the insulating layer 131 are in contact with each other, and the resin layer 101 and the support substrate 61 are in contact with each other over the entire region to be separated. Is provided. Therefore, there is no region with different adhesion in the region to be separated, so that separation can be performed with high yield without being caught during separation. Such a method is particularly effective when a large substrate is used, and can increase productivity.
  • the resin layer 101 is thinned.
  • the above-described thinning method of the resin layer 201 can be used. By etching a part of the surface of the resin layer 101 so that a part of the surface of the insulating layer 131 is exposed, the resin layer 101 having an opening can be formed as shown in FIG. it can.
  • FIG. 24D shows a state where a part of the upper portion of the resin layer 101 is etched and thinned by irradiating with plasma 80.
  • the resin layer 101 may be left as it is without etching the resin layer 101 as shown in FIG. Even in this configuration, since the thickness of the resin layer 101 located on the optical path of light from the light emitting element 120 is thinner than other portions, light absorption is suppressed and light extraction efficiency can be increased. However, it is preferable to remove the resin layer 101 located on the light path from the light emitting element 120 to reduce the number of interfaces located on the path, thereby reducing reflection and scattering by the interface.
  • part of the resin layer 101 may remain in contact with the insulating layer 131 after the thinning process of the resin layer 101.
  • the resin layer 101 may be completely removed by etching or the like.
  • a resin layer 101a and a resin layer 101b having an opening are stacked and formed over a supporting substrate 61.
  • the resin layer 101a can be formed using a method in which exposure and development processing are omitted in the resin layer 101 forming step. At this time, pre-bake processing is not required.
  • the resin layer 101b having an opening can be formed in the same manner as the resin layer 101.
  • the previously formed resin layer 101a is sufficiently heated and polymerized. As a result, even when the same material is used for the resin layer 101a and the resin layer 101b, the resin layer 101a is dissolved in the solvent contained therein when a material to be the resin layer 101b to be formed later is applied. Can be suppressed.
  • the insulating layer 131, the transistor 110, the light emitting element 120, and the like are formed over the resin layer 101 by the same method as described above.
  • the insulating layer 131 is provided to cover the concave portion of the resin layer 101.
  • the support substrate 61 and the substrate 11 are bonded together by the adhesive layer 151.
  • the resin layer 101 a is irradiated with light 70 from the support substrate 61 side through the support substrate 61.
  • the support substrate 61 and the resin layer 101a are separated.
  • the above can be used for the irradiation method and separation method of the light 70.
  • the resin layer 101a is etched so that the surface of the insulating layer 131 is exposed, whereby the resin layer 101 having an opening can be formed as shown in FIG.
  • the etching method the method for thinning the resin layer 101 can be used.
  • FIG. 25D shows a state in which the resin layer 101a is etched by irradiating with plasma 80.
  • the material and the apparatus can be shared, and thus productivity can be improved. Further, when different materials are used for these, the selectivity of the etching rate can be increased, so that the degree of freedom of processing conditions can be expanded.
  • the state shown in FIG. 25C or the like may be left without etching the resin layer 101a.
  • the thickness of the resin layer 101 (specifically, the resin layer 101a) positioned on the light path from the light emitting element 120 is thinner than the other portions, so that light absorption is suppressed and light extraction efficiency is reduced. Can be increased.
  • a resin layer 101d is formed on a support substrate 61.
  • the resin layer 101d is a resin layer having no recess.
  • the description of the resin layer 101a can be used for the method of forming the resin layer 101d.
  • the insulating layer 131, the transistor 110, the light emitting element 120, and the like are formed over the resin layer 101 by the same method as described above. Then, the support substrate 61 and the substrate 11 are bonded together by the adhesive layer 151.
  • the resin layer 101d is irradiated with light 70 from the support substrate 61 side through the support substrate 61.
  • the support substrate 61 and the resin layer 101d are separated.
  • the above can be used for the irradiation method and separation method of the light 70.
  • FIG. 26D shows a state where the resin layer 101d is etched by irradiation with plasma 80.
  • the resin layer 101d By etching the resin layer 101d so that the surface of the insulating layer 131 is exposed, as shown in FIG. 26E, the resin layer 101d is not provided and the surface of the insulating layer 131 is exposed. Can do. Since the resin layer 101d is not provided, in addition to improving light extraction efficiency, the display device itself can be made thin and lightweight.
  • the method shown here has a secondary effect that the insulating layer 131 and the like can be formed on the flat resin layer 101d. Therefore, the insulating layer 131 and the laminated structure on the insulating layer 131 can be formed on a relatively flat surface, and the step coverage can be improved. In addition, since the light emitting element 120 and the colored layer 152 can be formed on a flat surface, in-plane variations in luminance and chromaticity due to variations in thickness are reduced, and a display device with excellent display quality is realized. it can.
  • the description of the support substrate 61 can be used.
  • a sheet-like resin or paper that functions as a carrier sheet for the substrate 12 may be used for the support substrate 65.
  • the adhesive layer 90 can be made of a material that prevents the support substrate 65 and the substrate 12 from being separated during the subsequent steps and can easily separate the support substrate 65 and the substrate 12. Typically, OCA (Optical Clear Adhesive), silicone, or the like can be used. Moreover, the adhesion layer 90 may not have translucency.
  • a conductive layer 223 and an alignment film 224 are stacked over the substrate 12 (FIG. 27B).
  • the conductive layer 223 and the alignment film 224 are formed by using a flexible film or the like for the substrate 12 because a high temperature is not required and high-precision patterning is unnecessary. It is also possible to form the layer 223 and the alignment film 224 directly on the substrate 12.
  • the support substrate 65 and the adhesive layer 90 may be left as they are. At this time, the support substrate 65 can be used as a protective substrate for protecting the display device.
  • the opening is formed in the resin layer located on the light path from the light emitting element 120, but the opening is also formed in the resin layer located on the light path in the reflective liquid crystal element 220. It may be provided.
  • FIG. 28A shows an example having a region 32 in addition to the region 31.
  • the region 32 is a region overlapping the opening of the resin layer 202 and the liquid crystal element 220.
  • FIG. 28A illustrates an example in which the resin layer 202 has one opening including both the light-emitting element 120 and the liquid crystal element 220; however, the opening overlapping the light-emitting element 120 and the liquid crystal A configuration may be employed in which an opening overlapping with the element 220 is provided separately.
  • FIG. 28B shows an example in which no resin layer is provided on the substrate 12 side.
  • the structure illustrated in FIG. 28B is different from the structure illustrated in FIG. 27D in that the adhesive layer 52 and the insulating layer 204 are provided and the resin layer 101 is not provided. ing.
  • the insulating layer 204 which functions as a barrier layer is provided, even when a resin material or the like is used for the substrate 12, impurities are diffused into the liquid crystal 222 or the like. Can be prevented.
  • a resin layer 202, an insulating layer 204, a conductive layer 223, an alignment film 224, and the like are formed over a supporting substrate and bonded to the substrate 11, and then the resin layer 202 is completely formed. This can be realized by removing them.
  • a flat resin layer can be formed by a method in which exposure and development processing are omitted.
  • FIG. 29A is mainly different from FIG. 15 and the like in that the position of the colored layer 152 is different and that the light shielding layer 153 is provided.
  • a coloring layer 152 and a light shielding layer 153 are provided over the insulating layer 233 (downward in the drawing).
  • the light shielding layer 153 By having the light shielding layer 153, color mixture between adjacent pixels can be prevented.
  • the light-blocking layer 153 is provided between the transistor 210 and the light-emitting element 120, light emission 21 emitted from the light-emitting element 120 can be prevented from entering the semiconductor layer 212 of the transistor 210. The fluctuation of the electrical characteristics can be suppressed.
  • FIG. 29B is different from the structure illustrated in FIG. 15 and the like in that a substrate 11a is provided instead of the substrate 11, and the substrate 12, the adhesive layer 52, the resin layer 202, and the insulating layer 204 are included. Instead, the difference is mainly in that a substrate 12a is provided.
  • FIG. 29B illustrates an example in which the insulating layer 124 that covers the light-emitting element 120 is not provided.
  • substrates in which impurities such as water, hydrogen, and oxygen are difficult to diffuse can be used. Accordingly, it is not necessary to provide an insulating layer having a high barrier property between the substrate 11a and the light emitting element 120 and between the substrate 12a and the liquid crystal element 220, and the production cost can be reduced.
  • a substrate having poor flexibility may be used as one or both of the substrate 12a and the substrate 11a.
  • a light-transmitting substrate such as a glass substrate is used as the substrate 12a.
  • a substrate that does not have translucency, such as a metal substrate, may be used as the substrate 11a.
  • the substrate 12a and the substrate 11a can be used as a support substrate, so that the conveyance during the manufacturing process can be facilitated.
  • the substrate 12a or the substrate 11a it is preferable to use a substrate having a thickness of 0.3 mm or more, preferably 0.5 mm or more because conveyance becomes easy.
  • substrate 11a you may make it thin to less than 0.3 mm by grind
  • the alignment of the substrate 12a and the substrate 11a can be performed more easily than in the case where the substrates having flexibility are bonded to each other.
  • the accuracy can be increased, and the display device can have higher definition. For example, a display device having a definition exceeding 500 ppi can be realized.
  • the manufacturing process can be greatly simplified, so that the manufacturing cost can be reduced.
  • the EL layer 122 is provided in common between pixels of different colors, and light from the light-emitting element 120 is colored by the coloring layer 152 to emit different colors. It shows the method to do.
  • the light emitting element 120 may be formed by a so-called coloring method so that the EL layer 122 is divided between pixels of different colors. At this time, the entire EL layer 122 may be divided between the pixels, or at least one of the stacked films constituting the EL layer 122 may be divided between the pixels, and the other may be connected. At this time, since the light-emitting element 120 can emit different colors of light for each pixel, a structure without the colored layer 152 can be provided. By not providing the colored layer 152, the extraction efficiency can be increased.
  • the display device 10 illustrated in FIG. 1 is an example in which a bottom-gate transistor is applied to both the transistor 110 and the transistor 210.
  • the conductive layer 111 functioning as a gate electrode is located closer to the formation surface (resin layer 101 side) than the semiconductor layer 112.
  • An insulating layer 132 is provided to cover the conductive layer 111.
  • the semiconductor layer 112 is provided so as to cover the conductive layer 111.
  • a region of the semiconductor layer 112 that overlaps with the conductive layer 111 corresponds to a channel formation region.
  • the conductive layer 113a and the conductive layer 113b are provided in contact with the upper surface and the side end portion of the semiconductor layer 112, respectively.
  • the transistor 110 is an example in which the width of the semiconductor layer 112 is larger than that of the conductive layer 111.
  • the semiconductor layer 112 is disposed between the conductive layer 111 and the conductive layer 113a or the conductive layer 113b, so that the parasitic capacitance between the conductive layer 111 and the conductive layer 113a or the conductive layer 113b is reduced. Can do.
  • the transistor 110 is a channel etch type transistor, and can easily be used for a high-definition display device because it is relatively easy to reduce the area occupied by the transistor.
  • the transistor 210 has the same characteristics as the transistor 110.
  • the transistor 30A is different from the transistor 110 in that it includes a conductive layer 114 and an insulating layer 136.
  • the conductive layer 114 is provided over the insulating layer 133 and has a region overlapping with the semiconductor layer 112.
  • the insulating layer 136 is provided so as to cover the conductive layer 114 and the insulating layer 133.
  • the conductive layer 114 is located on the opposite side of the conductive layer 111 with the semiconductor layer 112 interposed therebetween.
  • the conductive layer 111 is a first gate electrode
  • the conductive layer 114 can function as a second gate electrode.
  • the threshold voltage of the transistor 110a can be controlled by applying a potential for controlling the threshold voltage to one of the conductive layers 111 and 114 and a potential for driving the other.
  • a conductive material including an oxide is preferably used for the conductive layer 114.
  • oxygen can be supplied to the insulating layer 133 by forming the conductive film that forms the conductive layer 114 in an atmosphere containing oxygen.
  • the proportion of oxygen gas in the film forming gas is in the range of 90% to 100%.
  • Oxygen supplied to the insulating layer 133 is supplied to the semiconductor layer 112 by a subsequent heat treatment, so that oxygen vacancies in the semiconductor layer 112 can be reduced.
  • the conductive layer 114 is preferably formed using a low-resistance oxide semiconductor.
  • an insulating film that releases hydrogen for example, a silicon nitride film or the like is preferably used for the insulating layer 136. Hydrogen is supplied into the conductive layer 114 during the formation of the insulating layer 136 or by heat treatment thereafter, so that the electrical resistance of the conductive layer 114 can be effectively reduced.
  • a transistor 110b illustrated in FIG. 30B is a top-gate transistor.
  • the conductive layer 111 functioning as a gate electrode is provided above the semiconductor layer 112 (on the side opposite to the formation surface side).
  • the semiconductor layer 112 is formed over the insulating layer 131.
  • an insulating layer 132 and a conductive layer 111 are stacked over the semiconductor layer 112.
  • the insulating layer 133 is provided so as to cover the upper surface and side edges of the semiconductor layer 112, the side surface of the insulating layer 133, and the conductive layer 111.
  • the conductive layer 113 a and the conductive layer 113 b are provided over the insulating layer 133.
  • the conductive layer 113a and the conductive layer 113b are electrically connected to the upper surface of the semiconductor layer 112 through an opening provided in the insulating layer 133.
  • the insulating layer 132 may be provided so as to cover the upper surface and the side end portion of the semiconductor layer 112. .
  • the transistor 110b can easily separate a physical distance between the conductive layer 111 and the conductive layer 113a or the conductive layer 113b, parasitic capacitance between them can be reduced.
  • a transistor 110c illustrated in FIG. 30C is different from the transistor 110b in that the transistor 110c includes a conductive layer 115 and an insulating layer 137.
  • the conductive layer 115 is provided over the insulating layer 131 and has a region overlapping with the semiconductor layer 112.
  • the insulating layer 137 is provided so as to cover the conductive layer 115 and the insulating layer 131.
  • the conductive layer 115 functions as a second gate electrode similarly to the conductive layer 114. Therefore, it is possible to increase the on-current, control the threshold voltage, and the like.
  • FIG. 30D illustrates a structure in which the transistor 110 and the transistor 110d are stacked.
  • the transistor 110d is a transistor having a pair of gate electrodes.
  • the transistor 110d includes a part of the conductive layer 113b functioning as the first gate electrode, a part of the insulating layer 133 functioning as the first gate insulating layer, the semiconductor layer 112a, and one of the source electrode and the drain electrode.
  • the transistor 110 is used as a transistor (also referred to as a switching transistor or a selection transistor) that controls the selection / non-selection state of a pixel
  • the transistor 110d is used as a transistor (also referred to as a drive transistor) that controls a current flowing through the light-emitting element 120. It is preferable to use it.
  • the conductive layer 114a is electrically connected to the conductive layer 113c through an opening provided in the insulating layer 136.
  • the conductive layer 121 is electrically connected to the conductive layer 114 a through an opening provided in the insulating layer 134.
  • a capacitor component also referred to as a gate capacitor
  • the conductive layer 114a and the semiconductor layer 112a can be used as a storage capacitor of the pixel.
  • a conductive layer 114b functioning as an electrode for connecting the conductive layer 113c and the conductive layer 121 and a conductive layer 114a functioning as the second gate electrode of the transistor 110d are formed. It is good also as a structure provided separately. At this time, since the conductive layer 114a is not connected to the conductive layer 113c, for example, a potential for controlling the threshold voltage of the transistor 110d may be applied, or the conductive layer 114a may be electrically connected to the conductive layer 113b functioning as the first gate electrode. May be connected to each other and given the same potential.
  • a transistor 110a, a transistor 110b, a transistor 110c, a transistor 110d, or the like can be used.
  • the transistor 110a, the transistor 110b, the transistor 110c, the transistor 110d, or the like can be used.
  • the transistor included in the element layer 100a and the transistor included in the element layer 100b may be formed of different transistors.
  • a transistor electrically connected to the light-emitting element 120 needs to pass a relatively large current. Therefore, a transistor having two gate electrodes, such as the transistor 110a, the transistor 110c, and the transistor 110d, is applied.
  • the transistor 110 and the like can be preferably applied to other transistors in order to reduce the area occupied by the transistors.
  • FIG. 31A illustrates an example in which the transistor 110a is applied instead of the transistor 210 in FIG. 1 and the transistor 110c is applied instead of the transistor 110.
  • FIG. 31A illustrates an example in which an insulating layer 124 that covers the light-emitting element 120 is provided, and a coloring layer 152 and a light-blocking layer 153 are provided over the insulating layer 124.
  • FIG. 31B illustrates an example in which the transistor 110b is applied instead of the transistor 210 in FIG. 1 and the transistor 110c is applied instead of the transistor 110.
  • 31A and 31B show an example in which an insulating layer 230 is provided between the resin layer 201 and the conductive layer 221b.
  • the insulating layer 230 can be formed using an inorganic insulating material that does not easily diffuse water, hydrogen, or the like.
  • the insulating layer 230 can prevent impurities such as water and hydrogen from diffusing into the transistor included in the element layer 100b, and can improve reliability.
  • 32A shows an example in which the transistor 110a is applied instead of the transistor 210 in FIG. 15 and the transistor 110c is applied instead of the transistor 110.
  • FIG. 32B shows an example in which the transistor 110b is applied instead of the transistor 210 in FIG. 15 and the transistor 110c is applied instead of the transistor 110.
  • FIG. 32B shows an example in which an insulating layer 230 is provided between the resin layer 201 and the conductive layer 221b.
  • the insulating layer 230 can be formed using an inorganic insulating material that does not easily diffuse water, hydrogen, or the like.
  • the insulating layer 230 can prevent impurities such as water and hydrogen from diffusing into the transistor included in the element layer 100b, and can improve reliability.
  • the insulating layer 131 which is a formation surface of the transistor 110c is provided in contact with the adhesive layer 50 without the resin layer 101 between the element layer 100a and the element layer 100b.
  • An example is shown. Accordingly, the light emitting element 120 and the like can be formed on a flat surface, and a display device with high display quality can be realized.
  • the adhesive layer 52, the resin layer 202, and the insulating layer 204 are not provided on the substrate 12 side, and the substrate 12 and the conductive layer 223 are provided in contact with each other.
  • An example is shown. Thereby, the structure of a display apparatus can be simplified and thickness can be reduced.
  • 32B illustrates an example in which a coloring layer 152 and a light-blocking layer 153 are provided between the transistor 110b and the light-emitting element 120, as in FIG. 29A. Specifically, a coloring layer 152 and a light-blocking layer 153 are provided in contact with the insulating layer covering the transistor 110b.
  • FIG. 32B illustrates an example in which the insulating layer 234 that covers the transistor 110b and functions as a planarization film is not provided, and the coloring layer 152 and the light-blocking layer 153 are provided in contact with the adhesive layer 50.
  • manufacturing cost can be reduced as compared with FIG.
  • the insulating layer 234 is not provided, the thickness of the display device 10 can be further reduced.
  • the light emitting element 120 can be brought closer to the viewer side, and viewing angle characteristics can be improved.
  • the display device exemplified below is a display device that includes both a reflective liquid crystal element and a light-emitting element and can perform both transmission mode and reflection mode display.
  • FIG. 33A is a block diagram illustrating an example of a structure of the display device 400.
  • the display device 400 includes a plurality of pixels 410 arranged in a matrix on the display portion 362.
  • the display device 400 includes a circuit GD and a circuit SD.
  • a plurality of pixels 410 arranged in the direction R, a plurality of wirings G1, a plurality of wirings G2, a plurality of wirings ANO, and a plurality of wirings CSCOM electrically connected to the circuit GD are provided.
  • a plurality of pixels 410 arranged in the direction C, and a plurality of wirings S1 and a plurality of wirings S2 electrically connected to the circuit SD are provided.
  • the circuit GD and the circuit SD that drive the liquid crystal element and the circuit GD and the circuit SD that drive the light emitting element are separately provided. May be provided. More specifically, the element layer 100a and the element layer 100b exemplified in Embodiment 1 may have the circuit GD and the circuit SD, respectively.
  • the pixel 410 includes a reflective liquid crystal element and a light emitting element.
  • the liquid crystal element and the light-emitting element have portions that overlap each other.
  • FIG. 33B1 illustrates a configuration example of the conductive layer 311b included in the pixel 410.
  • the conductive layer 311b functions as a reflective electrode of the liquid crystal element in the pixel 410.
  • an opening 451 is provided in the conductive layer 311b.
  • the light-emitting element 360 located in a region overlapping with the conductive layer 311b is indicated by a broken line.
  • the light-emitting element 360 is disposed so as to overlap with the opening 451 included in the conductive layer 311b. Thereby, the light emitted from the light emitting element 360 is emitted to the display surface side through the opening 451.
  • the pixel 410 adjacent in the direction R is a pixel corresponding to a different color.
  • the plurality of openings 451 may be provided at different positions on the conductive layer 311b so as not to be arranged in a straight line. preferable. Accordingly, the two adjacent light emitting elements 360 can be separated, and a phenomenon (also referred to as crosstalk) in which light emitted from the light emitting element 360 enters the colored layer of the adjacent pixel 410 can be suppressed. .
  • the two adjacent light emitting elements 360 can be arranged apart from each other, a display device with high definition can be realized even when the EL layer of the light emitting element 360 is separately formed using a shadow mask or the like.
  • FIG. 33 (B2) an arrangement as shown in FIG. 33 (B2) may be used.
  • the display using the liquid crystal element becomes dark. If the ratio of the total area of the openings 451 to the total area of the non-openings is too small, the display using the light emitting element 360 is darkened.
  • the area of the opening 451 provided in the conductive layer 311b functioning as the reflective electrode is too small, the efficiency of light that can be extracted from the light emitted from the light emitting element 360 is reduced.
  • the shape of the opening 451 can be, for example, a polygon, a rectangle, an ellipse, a circle, a cross, or the like. Moreover, it is good also as an elongated streak shape, a slit shape, and a checkered shape. Further, the opening 451 may be arranged close to adjacent pixels. Preferably, the opening 451 is arranged close to other pixels displaying the same color. Thereby, crosstalk can be suppressed.
  • FIG. 34 is a circuit diagram illustrating a configuration example of the pixel 410. In FIG. 34, two adjacent pixels 410 are shown.
  • the pixel 410 includes a switch SW1, a capacitor element C1, a liquid crystal element 340, a switch SW2, a transistor M, a capacitor element C2, a light emitting element 360, and the like.
  • a wiring G1, a wiring G2, a wiring ANO, a wiring CSCOM, a wiring S1, and a wiring S2 are electrically connected to the pixel 410.
  • a wiring VCOM1 electrically connected to the liquid crystal element 340 and a wiring VCOM2 electrically connected to the light emitting element 360 are shown.
  • FIG. 34 shows an example in which transistors are used for the switch SW1 and the switch SW2.
  • the switch SW1 has a gate connected to the wiring G1, a source or drain connected to the wiring S1, and the other source or drain connected to one electrode of the capacitor C1 and one electrode of the liquid crystal element 340. Yes.
  • the other electrode of the capacitor C1 is connected to the wiring CSCOM.
  • the other electrode of the liquid crystal element 340 is connected to the wiring VCOM1.
  • the switch SW2 has a gate connected to the wiring G2, one of the source and the drain connected to the wiring S2, and the other of the source and the drain connected to one electrode of the capacitor C2 and the gate of the transistor M.
  • the other electrode of the capacitor C2 is connected to one of the source and the drain of the transistor M and the wiring ANO.
  • the other of the source and the drain is connected to one electrode of the light emitting element 360.
  • the other electrode of the light emitting element 360 is connected to the wiring VCOM2.
  • FIG. 34 shows an example in which the transistor M has two gates sandwiching a semiconductor and these are connected. As a result, the current that can be passed by the transistor M can be increased.
  • electrical_connection state or a non-conduction state can be given to wiring G1.
  • a predetermined potential can be applied to the wiring VCOM1.
  • a signal for controlling the alignment state of the liquid crystal included in the liquid crystal element 340 can be supplied to the wiring S1.
  • a predetermined potential can be applied to the wiring CSCOM.
  • electrical_connection state or a non-conduction state can be given to wiring G2.
  • the wiring VCOM2 and the wiring ANO can each be supplied with a potential at which a potential difference generated by the light emitting element 360 emits light.
  • a signal for controlling the conduction state of the transistor M can be supplied to the wiring S2.
  • the pixel 410 shown in FIG. 34 can be driven by a signal applied to the wiring G1 and the wiring S1 and display using optical modulation by the liquid crystal element 340, for example, when performing reflection mode display.
  • display can be performed by driving the light-emitting element 360 by driving with signals supplied to the wiring G2 and the wiring S2.
  • the driving can be performed by signals given to the wiring G1, the wiring G2, the wiring S1, and the wiring S2.
  • FIG. 34 illustrates an example in which one pixel 410 includes one liquid crystal element 340 and one light emitting element 360
  • the present invention is not limited thereto.
  • FIG. 35A illustrates an example in which one pixel 410 includes one liquid crystal element 340 and four light-emitting elements 360 (light-emitting elements 360r, 360g, 360b, and 360w).
  • a pixel 410 illustrated in FIG. 35A is a pixel capable of full color display with one pixel, unlike FIG.
  • a wiring G3 and a wiring S3 are connected to the pixel 410.
  • four light-emitting elements 360 can be light-emitting elements exhibiting red (R), green (G), blue (B), and white (W), respectively.
  • the liquid crystal element 340 a reflective liquid crystal element exhibiting white can be used. Thereby, when displaying in reflection mode, white display with high reflectance can be performed. In addition, when display is performed in the transmissive mode, display with high color rendering properties can be performed with low power.
  • FIG. 35B shows a configuration example of the pixel 410.
  • the pixel 410 includes a light-emitting element 360 w that overlaps with an opening of the conductive layer 311, and a light-emitting element 360 r, a light-emitting element 360 g, and a light-emitting element 360 b that are arranged around the conductive layer 311.
  • the light emitting element 360r, the light emitting element 360g, and the light emitting element 360b preferably have substantially the same light emitting area.
  • FIG. 36 is a schematic perspective view of a display device 300 of one embodiment of the present invention.
  • the display device 300 has a structure in which a substrate 351 and a substrate 361 are attached to each other.
  • the substrate 361 is indicated by a broken line.
  • the display device 300 includes a display unit 362, a circuit unit 364, a wiring 365, a circuit unit 366, a wiring 367, and the like.
  • the substrate 351 is provided with, for example, a circuit portion 364, a wiring 365, a circuit portion 366, a wiring 367, a conductive layer 311b functioning as a pixel electrode, and the like.
  • FIG. 36 shows an example in which an IC 373, an FPC 372, an IC 375, and an FPC 374 are mounted on a substrate 351. Therefore, the structure illustrated in FIG. 36 can also be referred to as a display module including the display device 300 and the IC 373, the FPC 372, the IC 375, and the FPC 374.
  • circuit unit 364 for example, a circuit that functions as a scanning line driver circuit can be used.
  • the wiring 365 has a function of supplying signals and power to the display unit and the circuit unit 364.
  • the signal and power are input to the wiring 365 from the outside or the IC 373 via the FPC 372.
  • FIG. 36 shows an example in which the IC 373 is provided on the substrate 351 by a COG (Chip On Glass) method or the like.
  • the IC 373 for example, an IC having a function as a scan line driver circuit, a signal line driver circuit, or the like can be used.
  • the display device 300 includes a circuit that functions as a scan line driver circuit and a signal line driver circuit, or a circuit that functions as a scan line driver circuit or a signal line driver circuit is provided outside, and the display device 300 is driven through the FPC 372.
  • the IC 373 may not be provided in the case of inputting a signal to do so.
  • the IC 373 may be mounted on the FPC 372 by a COF (Chip On Film) method or the like.
  • FIG. 36 shows an enlarged view of a part of the display unit 362.
  • conductive layers 311b included in the plurality of display elements are arranged in a matrix.
  • the conductive layer 311b has a function of reflecting visible light, and functions as a reflective electrode of a liquid crystal element 340 described later.
  • the conductive layer 311b has an opening. Further, the light-emitting element 360 is provided on the substrate 351 side of the conductive layer 311b. Light from the light-emitting element 360 is emitted to the substrate 361 side through the opening of the conductive layer 311b.
  • FIG. 37 shows part of the region including the FPC 372, part of the region including the circuit portion 364, part of the region including the display portion 362, and part of the region including the circuit portion 366 of the display device illustrated in FIG. , And an example of a cross section when part of a region including the FPC 374 is cut.
  • the display device shown in FIG. 37 has a structure in which an element layer 100a, an element layer 200a, an element layer 100b, and an element layer 200b are sequentially stacked from the substrate 351 side.
  • a resin layer 101 is provided between the element layer 100 a and the substrate 351.
  • a resin layer 202 is provided between the element layer 200 b and the substrate 361.
  • the resin layer 101 and the substrate 351 are bonded by an adhesive layer 51.
  • the resin layer 202 and the substrate 361 are bonded by an adhesive layer 52.
  • the element layer 100a includes an insulating layer 478, a plurality of transistors, a capacitor 405, a wiring 365, an insulating layer 411, an insulating layer 412, an insulating layer 413, an insulating layer 414, and the like over the resin layer 101.
  • the element layer 200a includes an insulating layer 415, a light emitting element 360, a spacer 416, a colored layer 425, a light shielding layer 426, and the like.
  • the coloring layer 425 and the light shielding layer 426 are provided on the insulating layer 514 side described later, and the insulating layer 514 is bonded to the resin layer 101 side by an adhesive layer 417.
  • the circuit unit 364 includes a transistor 401.
  • the display portion 362 includes a transistor 402, a transistor 403, and a capacitor 405.
  • Each transistor has a gate, an insulating layer 411, a semiconductor layer, a source, and a drain.
  • the gate and the semiconductor layer overlap with each other with the insulating layer 411 interposed therebetween.
  • Part of the insulating layer 411 functions as a gate insulating layer, and the other part functions as a dielectric of the capacitor 405.
  • a conductive layer functioning as a source or a drain of the transistor 402 also serves as one electrode of the capacitor 405.
  • FIG. 37 shows a bottom-gate transistor.
  • the circuit portion 364 and the display portion 362 may have different transistor structures.
  • Each of the circuit portion 364 and the display portion 362 may include a plurality of types of transistors.
  • the capacitor element 405 includes a pair of electrodes and a dielectric between them.
  • the capacitor 405 includes the same material as the gate of the transistor and a conductive layer formed in the same process, and the same material as the source and drain of the transistor and a conductive layer formed in the same process.
  • the insulating layer 412, the insulating layer 413, and the insulating layer 414 are each provided so as to cover a transistor or the like.
  • the number of insulating layers covering the transistors and the like is not particularly limited.
  • the insulating layer 414 functions as a planarization layer. It is preferable that at least one layer of the insulating layer 412, the insulating layer 413, and the insulating layer 414 be formed using a material that does not easily diffuse impurities such as water or hydrogen. It becomes possible to effectively suppress the diffusion of impurities from the outside into the transistor, and the reliability of the display device can be improved.
  • the insulating layer 414 When an organic material is used for the insulating layer 414, impurities such as moisture may enter the light emitting element 360 or the like from the outside of the display device through the insulating layer 414 exposed at the end of the display device. When the light emitting element 360 is deteriorated due to the entry of impurities, the display device is deteriorated. Therefore, as illustrated in FIG. 37, the insulating layer 414 is preferably not positioned at the end portion of the display device. In the structure in FIG. 37, since the insulating layer using an organic material is not located at the end portion of the display device, entry of impurities into the light-emitting element 360 can be suppressed.
  • the light-emitting element 360 includes a conductive layer 421, an EL layer 422, and a conductive layer 423.
  • the light emitting element 360 may have an optical adjustment layer 424.
  • the light-emitting element 360 has a top emission structure that emits light toward the conductive layer 423.
  • the aperture ratio of the display portion 362 can be increased by arranging a transistor, a capacitor, a wiring, and the like so as to overlap with a light-emitting region of the light-emitting element 360.
  • One of the conductive layer 421 and the conductive layer 423 functions as an anode, and the other functions as a cathode.
  • a voltage higher than the threshold voltage of the light-emitting element 360 is applied between the conductive layer 421 and the conductive layer 423, holes are injected from the anode side into the EL layer 422 and electrons are injected from the cathode side.
  • the injected electrons and holes are recombined in the EL layer 422, and the light-emitting substance contained in the EL layer 422 emits light.
  • the conductive layer 421 is electrically connected to the source or drain of the transistor 403. These may be directly connected or may be connected via another conductive layer.
  • the conductive layer 421 functions as a pixel electrode and is provided for each light-emitting element 360. Two adjacent conductive layers 421 are electrically insulated by an insulating layer 415.
  • the EL layer 422 is a layer containing a light-emitting substance.
  • the conductive layer 423 functions as a common electrode and is provided over the plurality of light emitting elements 360. A constant potential is supplied to the conductive layer 423.
  • the light emitting element 360 overlaps the colored layer 425 with the adhesive layer 417 interposed therebetween.
  • the spacer 416 overlaps the light shielding layer 426 with the adhesive layer 417 interposed therebetween.
  • FIG. 37 shows a case where there is a gap between the conductive layer 423 and the light shielding layer 426, they may be in contact with each other.
  • the structure in which the spacer 416 is provided on the substrate 351 side is shown;
  • the combination of the color filter (colored layer 425) and the microcavity structure (optical adjustment layer 424) makes it possible to extract light with high color purity from the display device.
  • the film thickness of the optical adjustment layer 424 is changed according to the color of each pixel.
  • the colored layer 425 is a colored layer that transmits light in a specific wavelength range.
  • a color filter that transmits light in a red, green, blue, or yellow wavelength range can be used.
  • one embodiment of the present invention is not limited to the color filter method, and a color separation method, a color conversion method, a quantum dot method, or the like may be applied.
  • the light shielding layer 426 is provided between the adjacent colored layers 425.
  • the light blocking layer 426 blocks light from the adjacent light emitting elements 360 and suppresses color mixing between the adjacent light emitting elements 360.
  • light leakage can be suppressed by providing the end portion of the colored layer 425 so as to overlap the light shielding layer 426.
  • As the light-blocking layer 426 a material that blocks light emitted from the light-emitting element 360 can be used.
  • the light-blocking layer 426 is preferably provided in a region other than the display portion 362 such as the circuit portion 364 because unintended light leakage due to guided light or the like can be suppressed.
  • An insulating layer 478 is formed on one surface of the resin layer 101. Further, an insulating layer 513 or the like is provided on the substrate 361 side of the light-emitting element 360. It is preferable to use a highly moisture-proof film for the insulating layers 478 and 513.
  • the light-emitting element 360, a transistor, and the like are preferably provided between the pair of highly moisture-proof insulating layers, so that impurities such as water can be prevented from entering these elements and the reliability of the display device is improved. Note that an insulating film with high moisture resistance may be provided so as to cover the colored layer 425 and the light-blocking layer 426.
  • the highly moisture-proof insulating film examples include a film containing nitrogen and silicon such as a silicon nitride film and a silicon nitride oxide film, and a film containing nitrogen and aluminum such as an aluminum nitride film.
  • a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may be used.
  • the moisture permeation amount of the highly moisture-proof insulating film is 1 ⁇ 10 ⁇ 5 [g / (m 2 ⁇ day)] or less, preferably 1 ⁇ 10 ⁇ 6 [g / (m 2 ⁇ day)] or less, More preferably, it is 1 ⁇ 10 ⁇ 7 [g / (m 2 ⁇ day)] or less, and further preferably 1 ⁇ 10 ⁇ 8 [g / (m 2 ⁇ day)] or less.
  • the connection unit 406 includes a wiring 365.
  • the wiring 365 can be formed using the same material and the same process as the source and drain of a transistor, for example.
  • the connection unit 406 is electrically connected to an external input terminal that transmits an external signal or potential to the circuit unit 364.
  • an FPC 372 is provided as an external input terminal is shown.
  • the FPC 372 and the connection portion 406 are electrically connected through the connection layer 419.
  • connection layer 419 various anisotropic conductive films (ACF: Anisotropic Conductive Film), anisotropic conductive pastes (ACP: Anisotropic Conductive Paste), and the like can be used.
  • ACF Anisotropic Conductive Film
  • ACP Anisotropic Conductive Paste
  • Element layer 100b, Element layer 200b The element layer 100b and the element layer 200b are stacked with an insulating layer 510 interposed therebetween. It can be said that the element layer 100a and the element layer 200b are reflective liquid crystal display devices to which a vertical electric field method is applied.
  • the element layer 100b includes a plurality of transistors, a capacitor element (not shown), a wiring 367, an insulating layer 511, an insulating layer 512, an insulating layer 513, an insulating layer 514, and the like on the substrate 351 side of the insulating layer 510.
  • the element layer 200b includes a liquid crystal element 340, a resin layer 201, an alignment film 564, an adhesive layer 517, an insulating layer 576, and the like on the substrate 361 side of the insulating layer 510.
  • a resin layer 202 is provided between the element layer 200 b and the adhesive layer 52.
  • the resin layer 201 and the resin layer 202 are bonded together by an adhesive layer 517.
  • a liquid crystal 563 is sealed in a region surrounded by the resin layer 201, the resin layer 202, and the adhesive layer 517.
  • a polarizing plate 599 is located on the outer surface of the substrate 361.
  • the resin layer 202 is provided with openings that overlap with the liquid crystal element 340 and the light emitting element 360.
  • the liquid crystal element 340 includes a conductive layer 311b, a conductive layer 561, a conductive layer 562, and a liquid crystal 563.
  • the conductive layer 311b and the conductive layer 561 are electrically connected and function as a pixel electrode.
  • the conductive layer 562 functions as a common electrode.
  • the alignment of the liquid crystal 563 can be controlled by an electric field generated between the conductive layers 561 and 562.
  • a resin layer 201 that functions as an alignment film is provided between the liquid crystal 563 and the conductive layer 561.
  • An alignment film 564 is provided between the liquid crystal 563 and the conductive layer 562.
  • the conductive layer 561 and the conductive layer 311b are stacked, and the insulating layer 510 is provided to cover the conductive layer 561 and the conductive layer 311b.
  • the surfaces of the insulating layer 510 and the conductive layer 561 on the substrate 361 side have substantially the same height.
  • a resin layer 201 is provided on the surfaces of the insulating layer 510 and the conductive layer 561 on the substrate 361 side.
  • the conductive layer 561 is provided so as to extend outside the conductive layer 311b. Part of the conductive layer 561 is provided so as to overlap with the light-emitting element 360.
  • An insulating layer 576, a conductive layer 562, an alignment film 564, and the like are provided so as to cover the resin layer 202.
  • a transistor 501 On the substrate 351 side of the insulating layer 510, a transistor 501, a transistor 503, a capacitor element (not shown) wiring 367, and the like are provided. Further, insulating layers such as an insulating layer 511, an insulating layer 512, an insulating layer 513, and an insulating layer 514 are provided on the substrate 351 side of the insulating layer 510. A colored layer 425 and a light shielding layer 426 are provided on the substrate 351 side of the insulating layer 514.
  • FIG. 37 illustrates an example in which one of the source and the drain of the transistor 503 and the conductive layer 311b are electrically connected to each other through a conductive layer formed by processing the same conductive film as the gate electrode of the transistor 503. ing.
  • the conductive layer 311b can have a flat surface on the viewing side even in a contact portion with one of the source and the drain of the transistor 503. Therefore, since the contact portion can also contribute to display, the aperture ratio can be improved.
  • the conductive layer that is not electrically connected to the conductive layer 311b may function as part of the signal line.
  • the conductive layer functioning as the gate of the transistor 503 may function as part of the scan line.
  • FIG. 37 shows a configuration in which a colored layer is not provided as an example of the display portion 362. Therefore, the liquid crystal element 340 is an element that performs monochrome gradation display.
  • FIG. 37 shows an example in which a transistor 501 is provided as an example of the circuit portion 366.
  • At least one of the insulating layer 512 and the insulating layer 513 that covers each transistor is preferably made of a material in which impurities such as water and hydrogen hardly diffuse.
  • a conductive material that reflects visible light is used for the conductive layer 311b, and a conductive material that transmits visible light is used for the conductive layer 562.
  • a linearly polarizing plate may be used as the polarizing plate 599, but a circularly polarizing plate may also be used.
  • a circularly-polarizing plate what laminated
  • a desired contrast may be realized by adjusting a cell gap, an alignment, a driving voltage, or the like of the liquid crystal element used for the liquid crystal element 340 in accordance with the type of the polarizing plate 599.
  • connection portion 506 is provided in a region near the end of the resin layer 201.
  • the connection portion 506 is provided with a conductive layer 581 functioning as a terminal.
  • the conductive layer 581 is electrically connected to the wiring 367 through an opening provided in the insulating layer 510.
  • the conductive layer 581 is provided with the upper surface exposed, and is electrically connected to the FPC 374 through the connection layer 519.
  • the connection portion 506 is formed by stacking a layer and a conductive layer 581 obtained by processing the same conductive film as the conductive layer 561.
  • the upper surface of the conductive layer 581 is provided so as to protrude from the height of the upper surface of the resin layer 201.
  • An opening is formed in the resin layer 201, a conductive layer 581 is formed so as to fill the opening, the resin layer 201 and the supporting substrate are separated, and then the resin layer 201 is thinned, whereby such a shape is obtained.
  • a conductive layer 581 can be formed.
  • the conductive layer 562 is electrically connected to the conductive layer provided on the resin layer 201 side by a connection body 543 in a portion near the end of the resin layer 202. Accordingly, a potential or a signal can be supplied to the conductive layer 562 from the FPC 374, IC, or the like disposed on the resin layer 201 side.
  • connection body 543 for example, conductive particles can be used.
  • conductive particles those obtained by coating the surface of particles such as organic resin or silica with a metal material can be used. It is preferable to use nickel or gold as the metal material because the contact resistance can be reduced. In addition, it is preferable to use particles in which two or more kinds of metal materials are coated in layers, such as further coating nickel with gold.
  • a material that is elastically deformed or plastically deformed is preferably used as the connection body 543 which is a conductive particle may have a shape crushed in the vertical direction as shown in FIG. By doing so, the contact area between the connection body 543 and the conductive layer electrically connected to the connection body 543 can be increased, the contact resistance can be reduced, and the occurrence of problems such as poor connection can be suppressed.
  • connection body 543 is preferably arranged so as to be covered with the adhesive layer 517.
  • the connection body 543 may be dispersed in the adhesive layer 517 before curing.
  • the conductive layer 581, the conductive layer 311 b, the conductive layer 561, and the like are located on a formation surface side of the transistor 503 and the like. Therefore, these conductive layers can also be called back electrodes.
  • a substrate having a flat surface can be used for the substrate included in the display panel.
  • a material that transmits the light is used for the substrate from which light from the display element is extracted.
  • materials such as glass, quartz, ceramic, sapphire, and organic resin can be used.
  • the display panel can be reduced in weight and thickness. Furthermore, a flexible display panel can be realized by using a flexible substrate.
  • the substrate on the side from which light emission is not extracted does not have to be translucent, a metal substrate or the like can be used in addition to the above-described substrates.
  • a metal substrate is preferable because it has high thermal conductivity and can easily conduct heat to the entire substrate, which can suppress a local temperature increase of the display panel.
  • the thickness of the metal substrate is preferably 10 ⁇ m or more and 400 ⁇ m or less, and more preferably 20 ⁇ m or more and 50 ⁇ m or less.
  • the material constituting the metal substrate is not particularly limited, and for example, a metal such as aluminum, copper, or nickel, an aluminum alloy, an alloy such as stainless steel, or the like can be preferably used.
  • a substrate that has been subjected to insulation treatment by oxidizing the surface of the metal substrate or forming an insulating film on the surface may be used.
  • the insulating film may be formed by using a coating method such as a spin coating method or a dip method, an electrodeposition method, a vapor deposition method, or a sputtering method, or it is left in an oxygen atmosphere or heated, or an anodic oxidation method.
  • a coating method such as a spin coating method or a dip method, an electrodeposition method, a vapor deposition method, or a sputtering method, or it is left in an oxygen atmosphere or heated, or an anodic oxidation method.
  • an oxide film may be formed on the surface of the substrate.
  • Examples of the material having flexibility and transparency to visible light include, for example, glass having a thickness having flexibility, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), and polyacrylonitrile resin. , Polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyvinyl chloride resin, polytetrafluoroethylene (PTFE) resin Etc.
  • a material having a low thermal expansion coefficient is preferably used.
  • a polyamideimide resin, a polyimide resin, PET, or the like having a thermal expansion coefficient of 30 ⁇ 10 ⁇ 6 / K or less can be suitably used.
  • a substrate in which glass fiber is impregnated with an organic resin, or a substrate in which an inorganic filler is mixed with an organic resin to reduce the thermal expansion coefficient can be used. Since a substrate using such a material is light in weight, a display panel using the substrate can be lightweight.
  • the fibrous body uses high strength fibers of an organic compound or an inorganic compound.
  • the high-strength fiber specifically refers to a fiber having a high tensile modulus or Young's modulus, and representative examples include polyvinyl alcohol fiber, polyester fiber, polyamide fiber, polyethylene fiber, aramid fiber, Examples include polyparaphenylene benzobisoxazole fibers, glass fibers, and carbon fibers.
  • the glass fiber include glass fibers using E glass, S glass, D glass, Q glass, and the like.
  • a structure obtained by impregnating the fiber body with a resin and curing the resin may be used as a flexible substrate.
  • a structure made of a fibrous body and a resin is used as the flexible substrate, it is preferable because reliability against breakage due to bending or local pressing is improved.
  • glass or metal that is thin enough to be flexible can be used for the substrate.
  • a composite material in which glass and a resin material are bonded to each other with an adhesive layer may be used.
  • the barrier property against water and oxygen can be improved and a highly reliable display panel can be obtained.
  • a hard coat layer for example, silicon nitride, aluminum oxide
  • a layer of a material that can disperse the pressure for example, aramid resin
  • an insulating film with low water permeability may be stacked over a flexible substrate.
  • an inorganic insulating material such as silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, or aluminum nitride can be used.
  • the transistor includes a conductive layer that functions as a gate electrode, a semiconductor layer, a conductive layer that functions as a source electrode, a conductive layer that functions as a drain electrode, and an insulating layer that functions as a gate insulating layer.
  • the above shows the case where a bottom-gate transistor is applied.
  • the structure of the transistor included in the display device of one embodiment of the present invention there is no particular limitation on the structure of the transistor included in the display device of one embodiment of the present invention.
  • a planar transistor, a staggered transistor, or an inverted staggered transistor may be used.
  • a top-gate or bottom-gate transistor structure may be employed.
  • gate electrodes may be provided above and below the channel.
  • crystallinity of a semiconductor material used for the transistor there is no particular limitation on the crystallinity of a semiconductor material used for the transistor, and any of an amorphous semiconductor and a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partially including a crystal region) is used. May be used. It is preferable to use a crystalline semiconductor because deterioration of transistor characteristics can be suppressed.
  • An oxide semiconductor can be used as a semiconductor material used for the transistor.
  • an oxide semiconductor containing indium can be used.
  • a transistor including an oxide semiconductor having a band gap larger than that of silicon can hold charge accumulated in a capacitor connected in series with the transistor for a long time because of the low off-state current. .
  • the driving circuit can be stopped while maintaining the gradation of each pixel. As a result, a display device with extremely reduced power consumption can be realized.
  • the semiconductor layer is represented by an In-M-Zn-based oxide containing at least indium, zinc, and M (metal such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium). It is preferable to include a film. In addition, in order to reduce variation in electrical characteristics of the transistor including the oxide semiconductor, a stabilizer is preferably included together with the transistor.
  • stabilizers include the metals described in M above, and examples thereof include lanthanoids such as praseodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium.
  • lanthanoids such as praseodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium.
  • an oxide semiconductor included in the semiconductor layer for example, an In—Ga—Zn-based oxide, an In—Al—Zn-based oxide, an In—Sn—Zn-based oxide, an In—Hf—Zn-based oxide, an In— La-Zn oxide, In-Ce-Zn oxide, In-Pr-Zn oxide, In-Nd-Zn oxide, In-Sm-Zn oxide, In-Eu-Zn oxide In-Gd-Zn-based oxide, In-Tb-Zn-based oxide, In-Dy-Zn-based oxide, In-Ho-Zn-based oxide, In-Er-Zn-based oxide, In-Tm -Zn oxide, In-Yb-Zn oxide, In-Lu-Zn oxide, In-Sn-Ga-Zn oxide, In-Hf-Ga-Zn oxide, In-Al- Ga-Zn-based oxide, In-Sn-Al-Zn-based oxide, In-Sn-Hf-Zn
  • the In—Ga—Zn-based oxide means an oxide containing In, Ga, and Zn as main components, and the ratio of In, Ga, and Zn is not limited. Moreover, metal elements other than In, Ga, and Zn may be contained.
  • the semiconductor layer and the conductive layer may have the same metal element among the above oxides.
  • Manufacturing costs can be reduced by using the same metal element for the semiconductor layer and the conductive layer.
  • the manufacturing cost can be reduced by using metal oxide targets having the same metal composition.
  • an etching gas or an etching solution for processing the semiconductor layer and the conductive layer can be used in common.
  • the semiconductor layer and the conductive layer may have different compositions even if they have the same metal element. For example, a metal element in a film may be detached during a manufacturing process of a transistor and a capacitor to have a different metal composition.
  • the oxide semiconductor constituting the semiconductor layer preferably has an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more. In this manner, off-state current of a transistor can be reduced by using an oxide semiconductor with a wide energy gap.
  • the atomic ratio of the metal elements of the sputtering target used for forming the In-M-Zn oxide is In ⁇ M, Zn It is preferable to satisfy ⁇ M.
  • the atomic ratio of the semiconductor layer to be formed includes a variation of plus or minus 40% of the atomic ratio of the metal element contained in the sputtering target.
  • the bottom-gate transistor exemplified in this embodiment is preferable because the number of manufacturing steps can be reduced.
  • a material having low heat resistance can be used as a material for a wiring, an electrode, or a substrate below the semiconductor layer, which can be formed at a lower temperature than polycrystalline silicon.
  • a glass substrate having an extremely large area can be suitably used.
  • Conductive layer In addition to the gate, source, and drain of a transistor, materials that can be used for conductive layers such as various wirings and electrodes that constitute a display device include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, A metal such as tantalum or tungsten, or an alloy containing the same as a main component can be given. A film containing any of these materials can be used as a single layer or a stacked structure.
  • Two-layer structure to stack, two-layer structure to stack copper film on titanium film, two-layer structure to stack copper film on tungsten film, titanium film or titanium nitride film, and aluminum film or copper film on top of it A three-layer structure for forming a titanium film or a titanium nitride film thereon, a molybdenum film or a molybdenum nitride film, and an aluminum film or a copper film stacked thereon, and a molybdenum film or a There is a three-layer structure for forming a molybdenum nitride film.
  • an oxide such as indium oxide, tin oxide, or zinc oxide may be used. Further, it is
  • a conductive layer (a conductive layer functioning as a pixel electrode or a common electrode) included in a display element (a liquid crystal element, a light-emitting element, or another display element) reflects a conductive material that transmits visible light or reflects visible light.
  • a conductive material can be used.
  • a material containing one kind selected from indium, zinc, and tin may be used.
  • a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, an alloy including these metal materials, or a nitride of these metal materials (for example, Titanium nitride) can also be used by forming it thin enough to have translucency.
  • a stacked film of the above materials can be used as a conductive layer.
  • a film containing graphene can also be used. The film containing graphene can be formed, for example, by reducing a film containing graphene oxide formed in a film shape.
  • Examples of the conductive material that reflects visible light include aluminum, silver, and alloys containing these metal materials.
  • a metal material such as gold, platinum, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or an alloy containing these metal materials can be used.
  • lanthanum, neodymium, germanium, or the like may be added to the metal material or alloy.
  • Alloys containing aluminum such as aluminum and titanium alloys, aluminum and nickel alloys, aluminum and neodymium alloys, aluminum, nickel, and lanthanum alloys (Al-Ni-La), silver and copper alloys,
  • An alloy containing silver such as an alloy of silver, palladium, and copper (also referred to as Ag-Pd-Cu, APC), an alloy of silver and magnesium, or the like may be used.
  • An alloy containing silver and copper is preferable because of its high heat resistance. Furthermore, oxidation can be suppressed by stacking a metal film or a metal oxide film in contact with the aluminum film or the aluminum alloy film. Examples of materials for such metal films and metal oxide films include titanium and titanium oxide.
  • the conductive film that transmits visible light and a film made of a metal material may be stacked.
  • a laminated film of silver and indium tin oxide, a laminated film of an alloy of silver and magnesium and indium tin oxide, or the like can be used.
  • the conductive layers may be formed using a vapor deposition method or a sputtering method, respectively. In addition, it can be formed using a discharge method such as an inkjet method, a printing method such as a screen printing method, or a plating method.
  • Insulating layer As an insulating material that can be used for each insulating layer, for example, polyimide, acrylic, epoxy, silicone resin, and the like, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide are used. You can also
  • the light-emitting element is preferably provided between a pair of insulating films with low water permeability. Thereby, impurities such as water can be prevented from entering the light emitting element, and a decrease in reliability of the apparatus can be suppressed.
  • the low water-permeable insulating film examples include a film containing nitrogen and silicon such as a silicon nitride film and a silicon nitride oxide film, and a film containing nitrogen and aluminum such as an aluminum nitride film.
  • a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may be used.
  • the water vapor transmission rate of an insulating film with low water permeability is 1 ⁇ 10 ⁇ 5 [g / (m 2 ⁇ day)] or less, preferably 1 ⁇ 10 ⁇ 6 [g / (m 2 ⁇ day)] or less, More preferably, it is 1 ⁇ 10 ⁇ 7 [g / (m 2 ⁇ day)] or less, and further preferably 1 ⁇ 10 ⁇ 8 [g / (m 2 ⁇ day)] or less.
  • Display elements As a display element included in the first pixel located on the display surface side, an element that reflects and displays external light can be used. Since such an element does not have a light source, power consumption during display can be extremely reduced. As the display element included in the first pixel, a reflective liquid crystal element can be typically used. Alternatively, as a display element included in the first pixel, a shutter type MEMS (Micro Electro Mechanical Systems) element, an optical interference type MEMS element, a microcapsule type, an electrophoretic type, an electrowetting type, an electronic powder fluid ( A device to which a registered trademark method or the like is applied can be used.
  • a shutter type MEMS Micro Electro Mechanical Systems
  • the display element included in the second pixel located on the side opposite to the display surface side has a light source, and an element that displays using light from the light source can be used.
  • the light emitted from such a pixel is not affected by the brightness or chromaticity of the light, and therefore has high color reproducibility (wide color gamut) and high contrast, that is, vivid display. be able to.
  • a display element included in the second pixel for example, a self-luminous light emitting element such as an OLED (Organic Light Emitting Diode), an LED (Light Emitting Diode), or a QLED (Quantum-dot Light Emitting Diode) can be used.
  • a combination of a backlight that is a light source and a transmissive liquid crystal element that controls the amount of light transmitted through the backlight may be used.
  • liquid crystal element for example, a liquid crystal element to which a vertical alignment (VA: Vertical Alignment) mode is applied can be used.
  • VA Vertical Alignment
  • MVA Multi-Domain Vertical Alignment
  • PVA Power Planed Vertical Alignment
  • ASV Advanced Super View
  • liquid crystal elements to which various modes are applied can be used as the liquid crystal elements.
  • VA mode Transmission Nematic
  • IPS In-Plane-Switching
  • FFS Ringe Field Switching
  • ASM Analy Symmetrical Aligned Micro-cell
  • FLC Ferroelectric Liquid Crystal
  • AFLC Antiferroelectric Liquid Crystal
  • the liquid crystal element is an element that controls transmission or non-transmission of light by an optical modulation action of liquid crystal.
  • the optical modulation action of the liquid crystal is controlled by an electric field applied to the liquid crystal (including a horizontal electric field, a vertical electric field, or an oblique electric field).
  • a thermotropic liquid crystal a low molecular liquid crystal, a polymer liquid crystal, a polymer dispersed liquid crystal (PDLC), a ferroelectric liquid crystal, an antiferroelectric liquid crystal, or the like is used.
  • PDLC polymer dispersed liquid crystal
  • ferroelectric liquid crystal an antiferroelectric liquid crystal, or the like
  • These liquid crystal materials exhibit a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, and the like depending on conditions.
  • liquid crystal material either a positive type liquid crystal or a negative type liquid crystal may be used, and an optimal liquid crystal material may be used according to the mode and design to be applied.
  • an alignment film can be provided to control the alignment of the liquid crystal.
  • liquid crystal exhibiting a blue phase for which an alignment film is unnecessary may be used.
  • the blue phase is one of the liquid crystal phases.
  • a liquid crystal composition mixed with several percent by weight or more of a chiral agent is used for the liquid crystal layer in order to improve the temperature range.
  • a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response speed and is optically isotropic.
  • a liquid crystal composition including a liquid crystal exhibiting a blue phase and a chiral agent does not require alignment treatment and has a small viewing angle dependency. Further, since it is not necessary to provide an alignment film, a rubbing process is not required, so that electrostatic breakdown caused by the rubbing process can be prevented, and defects or breakage of the liquid crystal display device during the manufacturing process can be reduced. .
  • a reflective liquid crystal element can be used.
  • a conductive material that transmits visible light can be used for the electrode positioned on the viewing side, and a conductive material that reflects visible light can be used for the electrode positioned on the side opposite to the viewing side.
  • a polarizing plate is provided on the display surface side. Separately from this, it is preferable to arrange a light diffusing plate on the display surface side because the visibility can be improved.
  • the light-emitting element an element capable of self-emission can be used, and an element whose luminance is controlled by current or voltage is included in its category.
  • an LED, a QLED, an organic EL element, an inorganic EL element, or the like can be used.
  • a top emission type light emitting element as the light emitting element.
  • the conductive material that transmits visible light is used for the electrode from which light is extracted.
  • the said electroconductive material which reflects the said visible light for the electrode of the side which does not take out light is preferable to use.
  • the EL layer has at least a light emitting layer.
  • the EL layer is a layer other than the light-emitting layer, such as a substance having a high hole injection property, a substance having a high hole transport property, a hole blocking material, a substance having a high electron transport property, a substance having a high electron injection property, or a bipolar property.
  • a layer including a substance (a substance having a high electron transporting property and a high hole transporting property) and the like may be further included.
  • the EL layer can use either a low molecular compound or a high molecular compound, and may contain an inorganic compound.
  • the layers constituting the EL layer can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an ink jet method, or a coating method.
  • the EL layer includes two or more kinds of light emitting substances.
  • white light emission can be obtained by selecting the light emitting material so that the light emission of each of the two or more light emitting materials has a complementary color relationship.
  • a light emitting material that emits light such as R (red), G (green), B (blue), Y (yellow), and O (orange), or spectral components of two or more colors of R, G, and B It is preferable that 2 or more are included among the luminescent substances which show light emission containing.
  • a light-emitting element whose emission spectrum from the light-emitting element has two or more peaks in a wavelength range of visible light (for example, 350 nm to 750 nm).
  • the emission spectrum of the material having a peak in the yellow wavelength region is preferably a material having spectral components in the green and red wavelength regions.
  • the EL layer preferably has a structure in which a light-emitting layer including a light-emitting material that emits one color and a light-emitting layer including a light-emitting material that emits another color are stacked.
  • the plurality of light emitting layers in the EL layer may be stacked in contact with each other, or may be stacked through a region not including any light emitting material.
  • a region including the same material (for example, a host material or an assist material) as the fluorescent light emitting layer or the phosphorescent light emitting layer and not including any light emitting material is provided between the fluorescent light emitting layer and the phosphorescent light emitting layer. Also good. This facilitates the production of the light emitting element and reduces the driving voltage.
  • the light-emitting element may be a single element having one EL layer or a tandem element in which a plurality of EL layers are stacked with a charge generation layer interposed therebetween.
  • the above-described light-emitting layer and a layer containing a substance having a high hole-injecting property, a substance having a high hole-transporting property, a substance having a high electron-transporting property, a substance having a high electron-injecting property, a bipolar substance may have an inorganic compound such as a quantum dot or a polymer compound (oligomer, dendrimer, polymer, etc.).
  • a quantum dot can be used for a light emitting layer to function as a light emitting material.
  • a colloidal quantum dot material an alloy type quantum dot material, a core / shell type quantum dot material, a core type quantum dot material, or the like can be used.
  • a material including an element group of Group 12 and Group 16, Group 13 and Group 15, or Group 14 and Group 16 may be used.
  • a quantum dot material containing an element such as cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, lead, gallium, arsenic, or aluminum may be used.
  • the above can be used for a conductive material that transmits visible light and a conductive material that reflects visible light, which can be used for an electrode of a light-emitting element.
  • Adhesive layer As the adhesive layer, various curable adhesives such as an ultraviolet curable photocurable adhesive, a reactive curable adhesive, a thermosetting adhesive, and an anaerobic adhesive can be used.
  • these adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like.
  • a material with low moisture permeability such as an epoxy resin is preferable.
  • a two-component mixed resin may be used.
  • an adhesive sheet or the like may be used.
  • the resin may contain a desiccant.
  • a substance that adsorbs moisture by chemical adsorption such as an alkaline earth metal oxide (such as calcium oxide or barium oxide)
  • an alkaline earth metal oxide such as calcium oxide or barium oxide
  • a substance that adsorbs moisture by physical adsorption such as zeolite or silica gel
  • the inclusion of a desiccant is preferable because impurities such as moisture can be prevented from entering the element and the reliability of the display panel is improved.
  • the light extraction efficiency can be improved by mixing a filler having a high refractive index or a light scattering member with the resin.
  • a filler having a high refractive index or a light scattering member for example, titanium oxide, barium oxide, zeolite, zirconium, or the like can be used.
  • connection layer As the connection layer, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.
  • ACF Anisotropic Conductive Film
  • ACP Anisotropic Conductive Paste
  • Examples of materials that can be used for the colored layer include metal materials, resin materials, resin materials containing pigments or dyes, and the like.
  • the material that can be used for the light-shielding layer include carbon black, titanium black, metal, metal oxide, and composite oxide containing a solid solution of a plurality of metal oxides.
  • the light shielding layer may be a film containing a resin material or a thin film of an inorganic material such as a metal.
  • a stacked film of a film containing a material for the colored layer can be used for the light shielding layer.
  • a stacked structure of a film including a material used for a colored layer that transmits light of a certain color and a film including a material used for a colored layer that transmits light of another color can be used. It is preferable to use a common material for the coloring layer and the light-shielding layer because the apparatus can be shared and the process can be simplified.
  • FIG. 38 is different from FIG. 37 in that the structure of the transistor and the structure of the resin layer 202 are different, and that a colored layer 565, a light shielding layer 566, and an insulating layer 567 are provided.
  • the transistor 401, the transistor 403, and the transistor 501 each have a second gate electrode.
  • a transistor having a pair of gates is preferably used as the transistor provided in the circuit portion 364 or the circuit portion 366, the transistor that controls current flowing in the light-emitting element 360, and the like.
  • the resin layer 202 is provided with an opening overlapping the liquid crystal element 340 and an opening overlapping the light emitting element 360 separately. Thereby, the reflectance of the liquid crystal element 340 can be improved.
  • a light shielding layer 566 and a coloring layer 565 are provided on the surface of the insulating layer 576 on the liquid crystal element 340 side.
  • the colored layer 565 is provided so as to overlap with the liquid crystal element 340.
  • the element layer 200b can perform color display.
  • the light-blocking layer 566 has an opening that overlaps with the liquid crystal element 340 and an opening that overlaps with the light-emitting element 360. Thereby, color mixing between adjacent pixels can be suppressed, and a display device with high color reproducibility can be realized.
  • FIG. 39 shows an example in which a top-gate transistor is applied to each transistor.
  • parasitic capacitance can be reduced, so that a display frame frequency can be increased.
  • it can be suitably used for a large display panel of 8 inches or more.
  • FIG. 39 shows an example in which a top-gate transistor having a second gate electrode is applied to the transistor 401, the transistor 402, the transistor 403, and the transistor 501.
  • the transistor on the element layer 100a side includes a conductive layer 491 over the insulating layer 478.
  • An insulating layer 418 is provided to cover the conductive layer 491.
  • the transistor on the element layer 100 b side includes a conductive layer 591 over the insulating layer 510.
  • An insulating layer 578 is provided so as to cover the conductive layer 591.
  • FIG. 40 is a schematic perspective view of a display device 300 according to one embodiment of the present invention.
  • the display device 300 has a structure in which a substrate 351 and a substrate 361 are attached to each other.
  • the substrate 361 is indicated by a broken line.
  • the display device 300 includes a display unit 362, a circuit unit 364, a wiring 365, a circuit unit 366, a wiring 367, and the like. Between the substrate 351 and the substrate 361, for example, a circuit portion 364, a wiring 365, a circuit portion 366, a wiring 367, a conductive layer 311b functioning as a pixel electrode, and the like are provided.
  • 40 shows an example in which an IC 373 and an FPC 372 are mounted on the substrate 361, and an IC 375 and an FPC 374 are mounted on the substrate 351, respectively. Therefore, the structure illustrated in FIG. 40 can also be referred to as a display module including the display device 300, the IC 373, the FPC 372, the IC 375, and the FPC 374.
  • Cross-section configuration example 2 41, part of the region including the FPC 372, part of the region including the circuit portion 364, part of the region including the display portion 362, and part of the region including the circuit portion 366 of the display device illustrated in FIG. , And an example of a cross section when part of a region including the FPC 374 is cut.
  • a resin layer 101 is provided between the element layer 100a and the element layer 100b.
  • a resin layer 202 is provided between the element layer 200 b and the substrate 361.
  • the element layer 200 a and the substrate 351 are bonded by an adhesive layer 417.
  • the resin layer 202 and the substrate 361 are bonded by an adhesive layer 52.
  • the element layer 100a includes an insulating layer 478, a plurality of transistors, a capacitor 405, a wiring 365, an insulating layer 411, an insulating layer 412, an insulating layer 413, an insulating layer 414, and the like on the substrate 351 side of the resin layer 101.
  • the element layer 200a includes an insulating layer 415, a light-emitting element 360, a spacer 416, a coloring layer 425, and the like.
  • the light-emitting element 360 includes a conductive layer 421, an EL layer 422, and a conductive layer 423.
  • the light emitting element 360 may have an optical adjustment layer 424.
  • the light-emitting element 360 has a bottom emission structure that emits light toward the conductive layer 421.
  • the light emitting element 360 is covered with an insulating layer 418.
  • an adhesive layer 417 that covers the insulating layer 418 and the like and adheres the substrate 351 is provided.
  • the colored layer 425 overlaps with the light emitting element 360.
  • the coloring layer 425 is provided between the insulating layer 413 and the insulating layer 414.
  • the spacer 416 is provided in a portion that does not overlap with the light emitting element 360.
  • FIG. 41 shows the case where there is a slight gap between the insulating layer 418 over the spacer 416 and the substrate 351, but these may be in contact with each other.
  • the spacer 416 is provided on the resin layer 101 side, but may be provided on the substrate 351 side.
  • a light shielding layer may be provided closer to the resin layer 101 than the insulating layer 415.
  • it can be provided over the same surface as the colored layer 425.
  • light leakage can be suppressed by providing the end portion of the colored layer 425 so as to overlap the light shielding layer.
  • the light-blocking layer is preferably provided in a region other than the display portion 362 such as the circuit portion 364 because unintended light leakage due to guided light or the like can be suppressed.
  • An insulating layer 478 is formed on one surface of the resin layer 101. Further, an insulating layer 418 and the like are provided so as to cover the light-emitting element 360. A highly moisture-proof film is preferably used for the insulating layers 478 and 418.
  • Element layer 100b, Element layer 200b The element layer 100b and the element layer 200b are stacked with an insulating layer 510 interposed therebetween. It can be said that the element layer 100a and the element layer 200b are reflective liquid crystal display devices to which a vertical electric field method is applied.
  • the element layer 100b includes a plurality of transistors, a capacitor element (not shown), a wiring 367, an insulating layer 511, an insulating layer 512, an insulating layer 513, an insulating layer 514, and the like on the substrate 351 side of the insulating layer 510.
  • the element layer 200b includes a liquid crystal element 340, a resin layer 201, an alignment film 564, an adhesive layer 517, an insulating layer 576, and the like on the substrate 361 side of the insulating layer 510.
  • a resin layer 202 is provided between the element layer 200 b and the adhesive layer 52.
  • an adhesive layer 518 that overlaps with the connection portion 406 included in the element layer 100a is provided outside the adhesive layer 517.
  • FIG. 42 is mainly different from FIG. 41 in that the structure of the transistor is different, the resin layer 101 and the resin layer 202 are not provided, and the colored layer 565 and the light shielding layer 566 are provided.
  • the transistor 401, the transistor 403, and the transistor 501 each have a second gate electrode.
  • a transistor having a pair of gates is preferably used as the transistor provided in the circuit portion 364 or the circuit portion 366, the transistor that controls current flowing in the light-emitting element 360, and the like.
  • a light shielding layer 566 and a colored layer 565 are provided between the insulating layer 576 and the substrate 361.
  • the colored layer 565 is provided so as to overlap with the liquid crystal element 340.
  • the element layer 200b can perform color display.
  • the light-blocking layer 566 has an opening that overlaps with the liquid crystal element 340 and an opening that overlaps with the light-emitting element 360. Thereby, color mixing between adjacent pixels can be suppressed, and a display device with high color reproducibility can be realized.
  • the thickness of the display device can be reduced.
  • the thickness of the colored layer 425, the colored layer 565, and the like can be made uniform, and display quality can be improved.
  • FIG. 43 shows an example in which a top-gate transistor is applied to each transistor.
  • parasitic capacitance can be reduced, so that a display frame frequency can be increased.
  • it can be suitably used for a large display panel of 8 inches or more.
  • FIG. 43 shows an example in which a top-gate transistor having a second gate electrode is applied to the transistor 401, the transistor 403, and the transistor 501.
  • the element layer 100 a includes an insulating layer 479 between the adhesive layer 50 and the insulating layer 478.
  • a conductive layer 491 functioning as a second gate of the transistor is provided between the insulating layers 479 and 478.
  • An insulating layer 478 is provided to cover the conductive layer 491.
  • the element layer 100b includes a conductive layer 591 functioning as a second gate of the transistor between the insulating layer 510 and the insulating layer 578.
  • An insulating layer 578 is provided so as to cover the conductive layer 591.
  • a display module 8000 illustrated in FIG. 44 includes a touch panel 8004 connected to the FPC 8003, a display panel 8006 connected to the FPC 8005, a frame 8009, a printed circuit board 8010, and a battery 8011 between an upper cover 8001 and a lower cover 8002. .
  • the display device manufactured using one embodiment of the present invention can be used for the display panel 8006, for example.
  • the shape and dimensions of the upper cover 8001 and the lower cover 8002 can be changed as appropriate in accordance with the sizes of the touch panel 8004 and the display panel 8006.
  • a resistive film type or capacitive type touch panel can be used by being superimposed on the display panel 8006.
  • the touch panel 8004 may be omitted, and the display panel 8006 may have a touch panel function.
  • the frame 8009 has a function as an electromagnetic shield for blocking electromagnetic waves generated by the operation of the printed board 8010 in addition to the protective function of the touch panel 8004.
  • the frame 8009 may have a function as a heat sink.
  • the printed circuit board 8010 has a power supply circuit, a signal processing circuit for outputting a video signal and a clock signal.
  • a power supply for supplying power to the power supply circuit an external commercial power supply may be used, or a power supply using a battery 8011 provided separately may be used.
  • the battery 8011 can be omitted when a commercial power source is used.
  • the display module 8000 may be additionally provided with a member such as a polarizing plate, a retardation plate, and a prism sheet.
  • the display device of one embodiment of the present invention can achieve high visibility regardless of the intensity of external light. Therefore, it can be suitably used for a portable electronic device, a wearable electronic device (wearable device), an electronic book terminal, and the like.
  • the portable information terminal 800 includes a housing 801, a housing 802, a display portion 803, a display portion 804, a hinge portion 805, and the like.
  • the housing 801 and the housing 802 are connected by a hinge portion 805.
  • the portable information terminal 800 can open the housing 801 and the housing 802 as illustrated in FIG. 45B from the folded state as illustrated in FIG.
  • document information can be displayed on the display portion 803 and the display portion 804, and can also be used as an electronic book terminal.
  • still images and moving images can be displayed on the display portion 803 and the display portion 804.
  • the portable information terminal 800 can be folded when being carried, it has excellent versatility.
  • housing 801 and the housing 802 may include a power button, an operation button, an external connection port, a speaker, a microphone, and the like.
  • FIG. 45C shows an example of a portable information terminal.
  • a portable information terminal 810 illustrated in FIG. 45C includes a housing 811, a display portion 812, operation buttons 813, an external connection port 814, a speaker 815, a microphone 816, a camera 817, and the like.
  • the display portion 812 includes the display device of one embodiment of the present invention.
  • the portable information terminal 810 includes a touch sensor in the display unit 812. Any operation such as making a call or inputting characters can be performed by touching the display portion 812 with a finger or a stylus.
  • the operation button 813 by operating the operation button 813, the power ON / OFF operation and the type of image displayed on the display unit 812 can be switched.
  • the mail creation screen can be switched to the main menu screen.
  • the orientation (portrait or landscape) of the portable information terminal 810 is determined, and the screen display orientation of the display unit 812 is changed. It can be switched automatically.
  • the screen display orientation can be switched by touching the display portion 812, operating the operation button 813, or inputting voice using the microphone 816.
  • the portable information terminal 810 has one or a plurality of functions selected from, for example, a telephone, a notebook, an information browsing device, or the like. Specifically, it can be used as a smartphone.
  • the portable information terminal 810 can execute various applications such as mobile phone, electronic mail, text browsing and creation, music playback, video playback, Internet communication, and games.
  • FIG. 45D shows an example of a camera.
  • the camera 820 includes a housing 821, a display portion 822, operation buttons 823, a shutter button 824, and the like.
  • a removable lens 826 is attached to the camera 820.
  • the display portion 822 includes the display device of one embodiment of the present invention.
  • the camera 820 is configured such that the lens 826 can be removed from the housing 821 and replaced, but the lens 826 and the housing may be integrated.
  • the camera 820 can capture a still image or a moving image by pressing the shutter button 824.
  • the display portion 822 has a function as a touch panel and can capture an image by touching the display portion 822.
  • the camera 820 can be separately equipped with a strobe device, a viewfinder, and the like. Alternatively, these may be incorporated in the housing 821.
  • 46A and 46B show the structural models of the two types of display devices used for the calculation.
  • Model 1 and Model 2 shown in FIGS. 46A and 46B are the same in that a reflective liquid crystal element (LC) and an organic EL element (OLED) are stacked between a pair of glass substrates. I'm doing it.
  • Model 1 has a configuration in which a control circuit (Control Circuit) for driving LC and OLED is arranged in the same layer.
  • a control circuit for driving the LC and a control circuit for driving the OLED are arranged in different layers, and the OLED is provided therebetween.
  • the OLED has a bottom emission type in Model 1 and a top emission type in Model 2.
  • Model 2 since a control circuit can be separately provided in addition to using a top emission type element for the OLED, the design flexibility of the control circuit is high and miniaturization is easy.
  • the degree of freedom in designing the control circuit is Model 2 and that, for each of LC and OLED, it is necessary to arrange a control circuit, and it is necessary to provide a region that transmits the light of OLED. Compared to lower.
  • FIG. 47A shows an example of a control circuit for OLED in Model1.
  • the OLED current control transistor M2 is provided with two gates, the two gates cannot be connected. It is configured to connect with the source.
  • FIG. 47B shows an example of a control circuit for OLED in Model2. Even with the same definition as Model 1, since the available area is large in Model 2, a dual gate structure in which the two gates of the OLED driving transistor M2 are connected can be realized. Since the driving transistor has a dual gate structure, the saturation voltage is reduced, so that power consumption can be reduced. Further, FIG. 47B shows an example in which an initialization transistor M3 is provided.
  • an oxidation current that can reduce leakage current in an off state (also referred to as off-current) to about 10 ⁇ 24 A per channel width of 1 ⁇ m. It is preferable to use a transistor including a physical semiconductor. Accordingly, it is possible to drive at a low frame frequency (for example, 1 Hz or less) without degrading display quality, and power consumption can be reduced.
  • Model 1 and Model 2 the results of simulation of the current flowing through the OLED when the OLED and LC data are rewritten will be described.
  • the simulation estimated the value of the current flowing through the OLED when the potential of the scanning line of the OLED and the potential of the scanning line of the LC were changed from a low potential to a high potential.
  • FIG. 48 (A) shows the simulation results for Model1.
  • Model 1 it can be confirmed that current is instantaneously flowing in the OLED due to noise from the scanning line of the LC. Since this is an extremely short time, it is not visually recognized at a normal frame frequency (for example, 60 Hz), but may be visually recognized as flicker at a low frame frequency.
  • a normal frame frequency for example, 60 Hz
  • Model 2 since the sealing resin (thickness of about 3 ⁇ m) is provided between the control circuits of the LC and the OLED, these distances can be separated. Furthermore, the cathode of the OLED present between the two control circuits functions as a shield against noise. As a result, the configuration of Model 2 can suppress the influence of noise as compared with Model 1.
  • FIG. 48B shows the simulation result for Model2. It can be confirmed that Model 2 is hardly affected by noise as compared to Model 1.
  • a display device of one embodiment of the present invention was manufactured.
  • a control circuit for OLED and a top emission type light emitting element (OLED) were formed on a glass substrate.
  • OLED top emission type light emitting element
  • an oxide semiconductor was applied to the semiconductor layer.
  • FIG. 47B was applied to the control circuit.
  • a release layer, an insulating layer, a control circuit for LC, and a colored layer for OLED were sequentially formed on another glass substrate.
  • an oxide semiconductor was applied to the semiconductor layer in the transistor included in the LC control circuit.
  • a stacked film of a tungsten film and a tungsten oxide film is used as the separation layer, and silicon oxide is used as the insulating layer.
  • the two substrates were bonded with a sealing resin.
  • the glass substrate was removed by peeling between the peeling layer and the insulating layer.
  • FIG. 49D another glass substrate on which a colored layer for LC is formed is prepared, and this glass substrate and a glass substrate provided with an OLED or the like are attached with a liquid crystal sandwiched therebetween.
  • the display device was manufactured through the above steps.
  • Table 1 shows the specifications of the manufactured display device.
  • the manufactured display device has a higher definition of OLED than LC. This is intended to increase the aperture ratio of the reflective LC and to further improve the visibility in a bright place.
  • the OLED uses a yellow (Y) sub-pixel in addition to the three RGB colors to reduce power consumption.
  • FIGS. 50 (A) and 50 (B) show display states in a bright place and a dark place, respectively. Thus, it was confirmed that high visibility was obtained in either state.
  • by displaying the OLED and the LC at the same time for example, when used indoors, it is possible to display with the OLED supplementing in an environment where the illuminance is insufficient.
  • both the OLED and the LC are driven simultaneously, a good display with low power consumption and no flickering can be performed.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)

Abstract

L'objectif de l'invention est de réduire la consommation d'énergie d'un dispositif d'affichage, d'afficher une vidéo avec une qualité d'affichage élevée indépendamment de l'environnement d'utilisation, et de fournir un dispositif d'affichage léger qui n'est pas susceptible de se casser. Pour ce faire, l'invention concerne un dispositif d'affichage comprenant un premier transistor connecté à un élément réfléchissant à cristaux liquides, un second transistor connecté à un élément électroluminescent, une première couche isolante, une seconde couche isolante et une première couche adhésive. La première couche isolante est positionnée entre l'élément à cristaux liquides et le premier transistor, le premier transistor est positionné entre la première couche isolante et la première couche adhésive, et le second transistor et l'élément électroluminescent sont positionnés entre la seconde couche isolante et la première couche adhésive. Le premier transistor est disposé sur la première surface côté couche adhésive de la première couche isolante. Le second transistor est disposé sur la première surface côté couche adhésive de la seconde couche isolante. L'élément à cristaux liquides réfléchit la lumière sur le côté opposé à la première couche isolante, et l'élément électroluminescent émet de la lumière vers la première couche adhésive.
PCT/IB2017/052517 2016-05-10 2017-05-01 Dispositif d'affichage Ceased WO2017195067A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016094516 2016-05-10
JP2016094517 2016-05-10
JP2016-094516 2016-05-10
JP2016-094517 2016-05-10

Publications (1)

Publication Number Publication Date
WO2017195067A1 true WO2017195067A1 (fr) 2017-11-16

Family

ID=60267497

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2017/052517 Ceased WO2017195067A1 (fr) 2016-05-10 2017-05-01 Dispositif d'affichage

Country Status (1)

Country Link
WO (1) WO2017195067A1 (fr)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002196705A (ja) * 2000-12-25 2002-07-12 Sony Corp 画像表示装置
JP2003076302A (ja) * 2001-09-06 2003-03-14 Sharp Corp 表示装置
JP2003157026A (ja) * 2001-09-06 2003-05-30 Sharp Corp 表示装置及びその駆動方法
JP2003229548A (ja) * 2001-11-30 2003-08-15 Semiconductor Energy Lab Co Ltd 乗物、表示装置、および半導体装置の作製方法
JP2003316295A (ja) * 2002-04-16 2003-11-07 Ind Technol Res Inst 陽光下で表示できるディスプレイの画素構造
WO2004053819A1 (fr) * 2002-12-06 2004-06-24 Citizen Watch Co., Ltd. Affichage a cristaux liquides
JP2013225052A (ja) * 2012-04-23 2013-10-31 Sony Corp 表示装置
JP2015109427A (ja) * 2013-10-22 2015-06-11 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法
JP2015187620A (ja) * 2012-08-10 2015-10-29 シャープ株式会社 表示装置
WO2016055897A1 (fr) * 2014-10-08 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Dispositif d'affichage

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002196705A (ja) * 2000-12-25 2002-07-12 Sony Corp 画像表示装置
JP2003076302A (ja) * 2001-09-06 2003-03-14 Sharp Corp 表示装置
JP2003157026A (ja) * 2001-09-06 2003-05-30 Sharp Corp 表示装置及びその駆動方法
JP2003229548A (ja) * 2001-11-30 2003-08-15 Semiconductor Energy Lab Co Ltd 乗物、表示装置、および半導体装置の作製方法
JP2003316295A (ja) * 2002-04-16 2003-11-07 Ind Technol Res Inst 陽光下で表示できるディスプレイの画素構造
WO2004053819A1 (fr) * 2002-12-06 2004-06-24 Citizen Watch Co., Ltd. Affichage a cristaux liquides
JP2013225052A (ja) * 2012-04-23 2013-10-31 Sony Corp 表示装置
JP2015187620A (ja) * 2012-08-10 2015-10-29 シャープ株式会社 表示装置
JP2015109427A (ja) * 2013-10-22 2015-06-11 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法
WO2016055897A1 (fr) * 2014-10-08 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Dispositif d'affichage

Similar Documents

Publication Publication Date Title
US10345670B2 (en) Display device including light-emitting element and light-condensing means
JP6863803B2 (ja) 表示装置
KR102816300B1 (ko) 표시 장치
JP6983569B2 (ja) 半導体装置の作製方法
CN109891551B (zh) 半导体装置的制造方法
US10515609B2 (en) Display device and operation method thereof, and electronic device
JP2018032021A (ja) 表示装置
JP2018025787A (ja) 表示装置、および表示装置の作製方法
TW201813147A (zh) 顯示裝置、顯示模組、電子裝置及顯示裝置的製造方法
JP6871253B2 (ja) 表示装置の作製方法
TW201800814A (zh) 顯示裝置、顯示模組、電子裝置及顯示裝置的製造方法
JP6702781B2 (ja) 表示装置
JP6930864B2 (ja) 表示装置
JP2018060196A (ja) 表示装置、表示モジュール、および表示装置の作製方法
JP2018004952A (ja) 表示装置およびその作製方法
JP2020144391A (ja) 表示装置
JP2017207701A (ja) 表示装置
JP6999315B2 (ja) 表示装置の作製方法
JP2018013622A (ja) 表示装置、および電子機器
WO2017195067A1 (fr) Dispositif d'affichage
JP2018072462A (ja) 表示装置
JP2018010126A (ja) 表示装置
JP2017227794A (ja) 表示装置およびその動作方法、ならびに電子機器
JP2018036583A (ja) 表示装置
JP2018036584A (ja) 表示装置

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17795698

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 17795698

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP