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WO2017188189A1 - Système de chauffage, élément de chauffage en céramique, dispositif de traitement par plasma et dispositif d'absorption - Google Patents

Système de chauffage, élément de chauffage en céramique, dispositif de traitement par plasma et dispositif d'absorption Download PDF

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Publication number
WO2017188189A1
WO2017188189A1 PCT/JP2017/016229 JP2017016229W WO2017188189A1 WO 2017188189 A1 WO2017188189 A1 WO 2017188189A1 JP 2017016229 W JP2017016229 W JP 2017016229W WO 2017188189 A1 WO2017188189 A1 WO 2017188189A1
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Prior art keywords
power
heating element
resistance heating
temperature
heater
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Ceased
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PCT/JP2017/016229
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English (en)
Japanese (ja)
Inventor
猛 宗石
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Kyocera Corp
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Kyocera Corp
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Priority to US16/096,314 priority Critical patent/US11031271B2/en
Priority to JP2018514588A priority patent/JP6806768B2/ja
Publication of WO2017188189A1 publication Critical patent/WO2017188189A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H05B3/03—Electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/40—Heating elements having the shape of rods or tubes
    • H05B3/42—Heating elements having the shape of rods or tubes non-flexible
    • H05B3/48—Heating elements having the shape of rods or tubes non-flexible heating conductor embedded in insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
    • H05B2203/003—Heaters using a particular layout for the resistive material or resistive elements using serpentine layout
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/013—Heaters using resistive films or coatings

Definitions

  • the present disclosure relates to a heater system, a ceramic heater, a plasma processing apparatus, and an adsorption apparatus.
  • a ceramic heater provided with a resistance heating element on the surface or inside of a ceramic substrate is widely used to heat a semiconductor substrate (hereinafter also referred to as “wafer”).
  • the ceramic heater of Patent Document 1 three or more electrodes for supplying power to the resistance heating element are provided for one resistance heating element provided on the ceramic substrate. Thereby, the resistance heating element is substantially divided into a plurality of sections. An AC power supply is provided individually for each of the plurality of sections.
  • a plurality of resistance heating elements are provided on a ceramic substrate. And a control part supplies electric power separately with respect to each of several resistance heating element.
  • a heater system includes a ceramic base having a predetermined surface, and a resistance heating element extending along the predetermined surface in or on the ceramic base.
  • the said drive device is a main drive part which supplies 1st electric power to the whole predetermined 1st area among the said resistance heating elements, and a part of said 1st area superimposed on the said 1st electric power.
  • an additional driving unit that supplies the second power to the second section.
  • FIG. 9B is a sectional view taken along line IXb-IXb in FIG. 9A.
  • FIG. 1 is a schematic diagram illustrating a configuration of a heater system 100 according to the embodiment.
  • the heater system 100 includes a ceramic heater 10 and a driving device 50 that drives the ceramic heater 10. Hereinafter, these will be described in order.
  • the ceramic heater 10 does not necessarily have to be used with the upper side in FIG. 1 as the actual upper side.
  • terms such as the upper surface and the lower surface may be used assuming that the upper side in FIG. 1 is the actual upper side.
  • the ceramic heater 10 includes, for example, a substantially plate-like (disc shape in the illustrated example) heater body 10a and a pipe 10b extending downward from the heater body 10a.
  • the heater body 10a is a part that directly contributes to heating of the wafer, on which a wafer as an example of a heating object is placed on the upper surface 10c.
  • the pipe 10b is, for example, a portion that contributes to supporting the heater body 10a and / or protecting a cable (not shown) connected to the heater body 10a.
  • a ceramic heater may be defined only by the heater body 10a excluding the pipe 10b.
  • the upper surface 10c and the lower surface (not shown) of the heater body 10a are, for example, generally flat.
  • the planar shape and various dimensions of the heater body 10a may be appropriately set in consideration of the shape and dimensions of the heating object.
  • the planar shape is a circle (illustrated example) or a rectangle.
  • the diameter is 20 cm to 30 cm
  • the thickness is 5 mm to 30 mm.
  • the pipe 10b is a hollow member that is open at the top and bottom (both sides in the axial direction) (see also FIG. 2).
  • the shape of the cross section (cross section orthogonal to the axial direction) and the vertical cross section (cross section parallel to the axial direction) may be appropriately set.
  • the pipe 10b has a cylindrical shape having a constant diameter with respect to the position in the axial direction.
  • the dimension of the pipe 10b may be set appropriately.
  • the cross section of the pipe 10b is smaller than the lower surface of the heater body 10a.
  • the pipe 10b may be made of an insulating material such as ceramic, or may be made of a metal (conductive material).
  • the pipe 10b is located on the center side of the lower surface with respect to the lower surface of the heater body 10a.
  • the center side here is, for example, the figure gravity center side rather than the intermediate position between the figure gravity center (center) of the heater body 10a (lower surface) and the outer edge of the heater body 10a.
  • the figure centroid is the point where the sum of the first moments in the figure is 0, and is the center in a circle.
  • the line connecting the intermediate positions is similar to the outer edge of the heater body 10a.
  • the pipe 10b may be formed of the same material as the heater main body 10a (strictly, the ceramic base 1 described later), and may be fixed to the heater main body 10a by being formed integrally with the heater main body 10a. It may be manufactured separately from the main body 10a and may be fixed to the heater main body 10a with screws, other fixing tools, or an adhesive.
  • an area defined by the inner edge of the pipe 10b in the heater body 10a is a terminal arrangement area 10d (see FIG. 3) in which a plurality of terminals 5 (see FIG. 2) to be described later are arranged.
  • the plurality of terminals 5 are exposed to the outside of the heater body 10a from the lower surface of the heater body 10a.
  • a plurality of cables (not shown) are inserted into the pipe 10b. One end of each of the plurality of cables is connected to the plurality of terminals 5, and the other end is connected to the driving device 50. Thereby, the heater main body 10a and the drive device 50 are electrically connected. Note that the plurality of cables may be combined to form one cable, or may not be combined.
  • FIG. 2 is an exploded perspective view of the ceramic heater 10.
  • the completed ceramic heater 10 or the heater body 10a is integrally formed so as not to be disassembled, for example. That is, it is not necessary to be disassembled as in the exploded perspective view of FIG. Further, the ceramic heater 10 or the heater body 10a may be manufactured by combining a plurality of members (for example, ceramic green sheets) as shown in FIG. 2, or may be manufactured by a method different from such a method. Good.
  • a plurality of members for example, ceramic green sheets
  • the heater body 10a includes a ceramic base material 1 (see FIG. 1 for a reference symbol; in FIG. 2, composed of 1a, 1b, and 1c), a resistance heating element 2 embedded in the ceramic base material 1, and a resistance heating element 2. And various conductors for supplying electric power.
  • the various conductors are, for example, the connection conductor 3 (shown more schematically in FIG. 2 to FIG. 5 than FIG. 5), the wiring 4 and the terminal 5.
  • the outer shape of the ceramic substrate 1 constitutes the outer shape of the heater body 10a. Therefore, the description related to the shape and dimensions of the heater body 10a described above may be regarded as the description of the outer shape and dimensions of the ceramic base 1 as it is.
  • the material of the ceramic substrate 1 may be ceramic.
  • the ceramic is a sintered body mainly composed of aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ), silicon carbide (SiC), silicon nitride (Si 3 N 4 ), or the like.
  • AlN aluminum nitride
  • Al 2 O 3 aluminum oxide
  • SiC silicon carbide
  • Si 3 N 4 silicon nitride
  • the aluminum nitride ceramics which have aluminum nitride as a main component are excellent in corrosion resistance, for example. Therefore, when the ceramic substrate 1 is made of aluminum nitride ceramics, it is advantageous for use in a highly corrosive gas atmosphere, for example.
  • the ceramic substrate 1 is composed of a first ceramic layer 1a to a third ceramic layer 1c.
  • the ceramic substrate 1 may be produced by laminating the first ceramic layer 1a to the third ceramic layer 1c, or may be produced by a method different from such a method.
  • the ceramic substrate 1 is composed of the first ceramic layer 1a to the third ceramic layer 1c.
  • the first ceramic layer 1a is a layer constituting the upper surface 10c of the heater body 10a.
  • the third ceramic layer 1c is a layer constituting the lower surface of the heater body 10a.
  • the second ceramic layer 1b is a layer located between the first ceramic layer 1a and the third ceramic layer 1c.
  • Each of the first ceramic layer 1a to the third ceramic layer 1c is, for example, a layer shape (plate shape) having a substantially constant thickness, and the planar shape thereof is the whole of the heater body 10a (ceramic base material 1) described above. It is the same as the planar shape.
  • the thickness of each layer may be appropriately set according to the role of each layer.
  • the resistance heating element 2 is constituted by a conductor pattern located between the first ceramic layer 1a and the second ceramic layer 1b.
  • the conductor pattern extends along the upper surface of the second ceramic layer 1b (in another aspect, the lower surface of the first ceramic layer 1a), and is generally linear.
  • the first ceramic layer 1a has a substantially constant thickness.
  • the resistance heating element 2 extends in parallel to the upper surface 10 c of the ceramic substrate 1.
  • FIG. 3 is a plan view showing the upper surface of the second ceramic layer 1b.
  • only one resistance heating element 2 is provided in the heater body 10a, and it does not intersect with itself from one end (first main power supply portion Pa) to the other end (second main power supply portion Pb). It extends.
  • Both ends of the resistance heating element 2 are referred to as a first main power feeding part Pa and a second main power feeding part Pb (hereinafter simply referred to as “main power feeding part P”) for supplying power to the resistance heating element 2, and they are not distinguished from each other.
  • the main power feeding part P may be displaced from both ends of the resistance heating element 2.
  • the term may be defined so that the word of the resistance heating element 2 is used for a portion (an example of the first section) between the pair of main power feeding portions P regardless of the presence or absence of such a shift. . In the following description, for convenience, it is assumed that both ends of the resistance heating element 2 and the pair of main power feeding portions P are synonymous.
  • the resistance heating element 2 does not need to have a special configuration (for example, a pad shape) in the main power feeding portion P, and may have the same configuration as that of most of the resistance heating element 2. .
  • a through conductor reference numeral omitted penetrating the second ceramic layer 1 b is illustrated at the position of the main power feeding part P. This through conductor constitutes the connecting conductor 3 or the terminal 5 as will be described later.
  • the resistance heating element 2 may have a special configuration in the main power feeding part P.
  • both ends (Pa, Pb) of the resistance heating element 2 and the position and shape of the path of the resistance heating element 2 may be set as appropriate.
  • both ends of the resistance heating element 2 are accommodated in the terminal arrangement region 10d described above.
  • the resistance heating element 2 includes a first region Ar1 to a fourth region Ar4 obtained by dividing the ceramic substrate 1 in the circumferential direction in plan view (fan-shaped regions in the illustrated example. Hereinafter, they may be simply referred to as regions Ar). .) In order.
  • the number of divisions and the magnitude relationship of the plurality of areas Ar may be set as appropriate.
  • the division is equal division. However, it may not be equally divided.
  • the equal division is divided into four equal parts in the illustrated example. However, the equal division is not limited to four equal parts, and may be equal to two equal parts, three equal parts, or five equal parts or more.
  • the path of the resistance heating element 2 in each region Ar may be set as appropriate.
  • the resistance heating element 2 extends in a meandering manner (in a meander shape) in each region Ar. That is, the resistance heating element 2 extends so as to reciprocate in a second direction (vertical direction in FIG. 3) orthogonal to the first direction while shifting the position in a predetermined first direction (horizontal direction in FIG. 3). ing.
  • the resistance heating element 2 reciprocates in a direction parallel to the second direction, and the position in the first direction is shifted at the end of the reciprocation.
  • the resistance heating element 2 may shift the position in the first direction by extending obliquely in the second direction and reciprocating like a triangular waveform, for example.
  • the resistance heating element 2 may have a linear shape parallel to the first direction at the end of reciprocation or a curved shape that bulges outward.
  • the first direction (and the second direction orthogonal to the first direction) may be appropriately set for each region Ar.
  • the second direction (reciprocating direction) is a direction parallel to one of two boundary lines (two radii in the sector shape) on both sides of each region Ar.
  • the second direction may be, for example, a direction parallel to a center line located in the middle of two boundary lines or a direction orthogonal to the center line.
  • each region Ar has a sector shape with a central angle of 90 °. Therefore, when the second direction is parallel to one of the two boundary lines as described above, the first direction is the other boundary. Parallel to the line.
  • the length (reciprocating distance) in the second direction (up and down direction in FIG. 3) of the resistance heating element 2 may be set as appropriate.
  • the round-trip distance is the length of each region Ar in the second direction with respect to the position in the first direction (left and right direction in FIG. 3) so that the arrangement range of the resistance heating element 2 is substantially similar to the shape of the region Ar. It changes according to the change of.
  • the pitch in the first direction of the resistance heating element 2 may be set as appropriate. The pitch may be constant or may vary depending on the position in the first direction.
  • the resistance heating element 2 has a meandering portion as described above and a portion extending along the outer edge of the ceramic substrate 1. Thereby, for example, the resistance heating element 2 can be extended from one area Ar to another area Ar without intersecting the resistance heating element 2 with itself.
  • the material of the resistance heating element 2 is a conductor (for example, metal) that generates heat when an electric current flows.
  • the conductor may be appropriately selected and is, for example, tungsten (W), molybdenum (Mo), platinum (Pt), indium (In), or an alloy containing these as a main component.
  • the resistance heating element 2 is also used as a sensor element (thermistor) for detecting temperature.
  • tungsten or an alloy containing tungsten as a main component is used as the material of the resistance heating element 2, for example, tungsten has a relatively high resistance temperature coefficient, so that the temperature detection accuracy is improved.
  • the resistance heating element 2 includes one or more branch power supply units (seconds) for supplying electric power to the resistance heating element 2 between the pair of main power supply units P (in the middle of the resistance heating element 2 in another viewpoint).
  • the resistance heating element 2 includes a first divided section R1 to a fourth divided section R4 (divided by a branch power feeding section D) in a portion (an example of the first section) between a pair of main power feeding sections P (an example of the first section).
  • a branch power feeding section D a branch power feeding section
  • main power feeding sections P an example of the first section
  • each of them is an example of the second section.
  • these may be simply referred to as “divided sections Rn” without distinction.
  • the resistance heating element 2 has the branch power feeding part D
  • the resistance heating element 2 has a special configuration (for example, a pad) in the branch power feeding part D, as in the case of the main power feeding part P.
  • the branch power feeding portion D may have the same configuration as that of most other resistance heating elements 2.
  • a through conductor reference numeral omitted; connection conductor 3 penetrating the second ceramic layer 1 b is illustrated at the position of the branch feeding part D.
  • the resistance heating element 2 may have a special configuration in the branch power feeding portion D.
  • the branch power feeding part D may be made of a material (for example, a material constituting the connection conductor 3) different from the material constituting the other most part of the resistance heating element 2. That is, from the viewpoint of the material, the resistance heating element 2 may be configured by connecting a plurality of resistance heating elements in series. Even in this case, electric power can be supplied to the entire resistance heating element 2 by the potential difference between the pair of main power feeding portions P. Therefore, in the present disclosure, it is assumed that the resistance heating element 2 is one, and the branch feeding part D is a part of the resistance heating element 2. The same applies to the main power feeding unit P.
  • the number of branch feeding parts D (number of divided sections Rn), the relative position of the branch feeding part D with respect to the main feeding part P or another branch feeding part D on the path of the resistance heating element 2 (the length of the divided section Rn)
  • the position of the branch power feeding part D with respect to the ceramic substrate 1 (the position of the divided section Rn with respect to the ceramic substrate 1) may be set as appropriate. In the illustrated example, this is as follows.
  • a total of three branch power feeding units D are provided. Then, on the path of the resistance heating element 2, the first branch power feeding part D1, the second branch power feeding part D2, and the third branch power feeding part D3 are sequentially located from the second main power feeding part Pb to the first main power feeding part Pa. is doing. As a result, a total of four divided sections Rn are provided. Then, on the path of the resistance heating element 2, the first divided section R1, the second divided section R2, the third divided section R3, and the fourth divided section are sequentially arranged from the second main power feeding section Pb to the first main power feeding section Pa. R4 is located.
  • the plurality of (three in the illustrated example) branch power feeding portions D are, for example, approximately equal in length between the pair of main power feeding portions P (four in the illustrated example) on the path of the resistance heating element 2. ). That is, the lengths of the plurality of divided sections Rn are substantially equal to each other. In the case of being substantially equal, for example, the difference between the length of each of the plurality of divided sections Rn and the length when the length between the pair of main power feeding portions P is strictly divided is 10% or less of the latter.
  • the plurality of divided sections Rn are set, for example, so as to be approximately located in a plurality of areas Ar. Specifically, it is as follows.
  • the resistance heating element 2 extends from the second main power feeding portion Pb in the terminal arrangement region 10d to the first region Ar1.
  • the first branch power feeding portion D1 is positioned at the boundary between the two regions Ar, for example, in a portion where the resistance heating element 2 extends from the first region Ar1 to the second region Ar2 along the outer edge of the ceramic substrate 1. ing. Thereby, the first divided section R1 extends substantially within the first region Ar1.
  • the second branch power feeding portion D2 is located at the boundary between the two regions Ar, for example, in a portion where the resistance heating element 2 extends from the second region Ar2 to the third region Ar3 in the terminal arrangement region 10d. Thereby, the second divided section R2 extends substantially in the second region Ar2.
  • the third branch power feeding portion D3 is located at the boundary between the two regions Ar, for example, in a portion where the resistance heating element 2 extends from the third region Ar3 to the fourth region Ar4 along the outer edge of the ceramic substrate 1. ing. Thereby, the third divided section R3 extends substantially in the third region Ar3.
  • the resistance heating element 2 extends from the third branch power feeding portion D3 to the first main power feeding portion Pa in the terminal arrangement region 10d via the fourth region Ar4.
  • the fourth divided section R4 extends substantially within the fourth region Ar4.
  • (Connection conductor, wiring and terminal) 4 is a cross-sectional view taken along line IV-IV in FIG.
  • connection conductor 3, the wiring 4 and the terminal 5 shown in FIGS. 2 and 4 are for supplying power to the resistance heating element 2, and are provided on the ceramic substrate 1.
  • the wiring 4 is a hierarchical wiring located in a lower layer with respect to the resistance heating element 2, and connects any one of the plurality of power feeding units (P and D) and any of the plurality of terminals 5.
  • the connection conductor 3 is interposed between the wiring 4 and the power feeding portion and contributes to these connections. By providing such a hierarchical wiring, for example, it is possible to connect an arbitrary position (power feeding unit) of the resistance heating element 2 and a terminal 5 arranged at an arbitrary position.
  • the terminal 5 is formed on the ceramic substrate 1 in the terminal arrangement region 10d (FIG. 3) which is a part of the region on the center side in the plan view of the ceramic substrate 1. It is exposed from the lower surface to the outside of the ceramic substrate 1.
  • the main power feeding part P and the branch power feeding part D those located outside the terminal arrangement region 10d (D1 and D3 in the present embodiment) are connected to the terminal 5 via the connection conductor 3 and the wiring 4.
  • the main power feeding part P and the branch power feeding part D those located in the terminal arrangement region 10d (in this embodiment, Pa, Pb, and D2) are directly connected to the terminal 5 without the wiring 4, for example. Has been.
  • connection conductor 3 is constituted by, for example, a through conductor penetrating the second ceramic layer 1b. And it is connected to these electric power feeding parts by being located directly under the 1st branch electric power feeding part D1 and the 3rd branch electric power feeding part D3. In other words, the connection conductor 3 protrudes from the feeding portion of the resistance heating element 2 to the side opposite to the upper surface 10 c of the ceramic substrate 1 inside the ceramic substrate 1.
  • the wiring 4 is constituted by, for example, a conductor pattern located between the second ceramic layer 1b and the third ceramic layer 1c. That is, the wiring 4 is embedded in the ceramic substrate 1.
  • the dimension and shape of the wiring 4 may be set as appropriate.
  • the wiring 4 extends linearly with a substantially constant width.
  • the terminal 5 is located in the terminal arrangement region 10d that is a part of the center side of the ceramic substrate 1, and the first branch power feeding portion D1 and the third branch power feeding portion D3 are outside the terminal arrangement region 10d.
  • the wiring 4 extends substantially in the radial direction of the ceramic substrate 1. As described above, since the first ceramic layer 1a and the second ceramic layer 1b have a substantially constant thickness, the wiring 4 extends in parallel to the upper surface 10c of the ceramic substrate 1.
  • the one connected to the wiring 4 is constituted by, for example, a through conductor penetrating the third ceramic layer 1 c.
  • the terminal 5 is connected to the wiring 4 by being positioned immediately below the wiring 4 at the substantially end portion of the wiring 4 opposite to the connection conductor 3.
  • one that is directly connected to the power feeding part (Pa, Pb, and D2) is constituted by, for example, a through conductor that penetrates the second ceramic layer 1 b and the third ceramic layer 1 c. And this terminal 5 is connected to the electric power feeding part (Pa, Pb, and D2) by being located directly under the resistance heating element 2.
  • FIG. A portion of the terminal 5 that penetrates the second ceramic layer 1 b may be regarded as the connection conductor 3.
  • any of the terminals 5 may further have a pad (layered conductor) located on the lower surface of the ceramic substrate 1.
  • connection conductor 3, the wiring 4, and the terminal 5 may be an appropriate conductor (for example, metal).
  • these materials are copper (Cu) or aluminum (Al) or an alloy containing these as a main component.
  • the material of these members may be the same as the material of the resistance heating element 2.
  • the surface exposed to the outside of the terminal 5 may be covered with a metal excellent in bondability and / or corrosion resistance.
  • the through conductors constituting the connection conductor 3 (similar to a divided conductor 3a described later) and the terminal 5 may be the same as, for example, various ones used in a multilayer wiring board.
  • the through conductor may be a conductor filled in a hole formed in the ceramic layer (may be solid).
  • the through conductor may be a conductor formed on the inner peripheral surface in the hole (may be hollow). However, if it is solid, it is easy to secure a conduction area.
  • the hollow through conductor may be partially or entirely filled with an insulating material. Further, the through conductor may have a constant diameter, or may have a variable diameter (for example, a tapered shape or a reverse tapered shape).
  • the shape of the cross section perpendicular to the penetrating direction may be set as appropriate.
  • the shape is circular.
  • the penetrating conductor may be formed by overlapping conductors penetrating each ceramic layer, or two or more ceramic layers. It may be produced so as to penetrate through.
  • connection portion between the through conductor (connection conductor 3 and terminal 5) and the layered pattern (resistance heating element 2 and wiring 4) the through conductor is formed on the upper surface or the lower surface of the layered pattern from the viewpoint of the material or the manufacturing process. It may be connected, a layered pattern may be connected around the through conductor, or such distinction may not be possible.
  • connection conductor 3 and / or the terminal 5 are conceptually regarded as being connected to the upper surface or the lower surface of the resistance heating element 2 and the wiring 4. .
  • FIG. 5 is an enlarged perspective view showing the wiring 4 and its surroundings.
  • Each connection conductor 3 includes, for example, a plurality (three in the illustrated example) of divided conductors 3a.
  • the plurality of divided conductors 3 a are located along the path of the resistance heating element 2, and are connected in parallel between one power feeding unit (D1 or D3 in the present embodiment) and one wiring 4. Thereby, the conduction area between the resistance heating element 2 and the wiring 4 is easily secured.
  • Each divided conductor 3a is constituted by, for example, a through conductor penetrating the second ceramic layer 1b as described above for the connection conductor 3.
  • each divided conductor 3a may be set as appropriate.
  • the through conductors constituting the divided conductors 3a may be the same as those used in the multilayer wiring board as described above, and as an example, have a substantially cylindrical shape.
  • the diameter (for example, the maximum diameter) of each divided conductor 3a is substantially equal to the width of the resistance heating element 2, for example. In the case of being substantially equal, for example, the difference between them is 10% or less of the width of the resistance heating element 2.
  • the diameter of the divided conductor 3 a may not be equal to the width of the resistance heating element 2.
  • the width of the resistance heating element 2 is 1 mm or more and 10 mm or less.
  • the diameter of the divided conductor 3a (columnar shape) is 1 mm or more and 7 mm or less.
  • the number and relative positions of the plurality of divided conductors 3a may be set as appropriate. Unlike the illustrated example, the number of the divided conductors 3a may be 2 or 4 or more.
  • the relative positions of the plurality of divided conductors 3a corresponding to one power supply unit are defined by the path of the resistance heating element 2 because the plurality of division conductors 3a are arranged along the path of the resistance heating element 2.
  • the power feeding portion (D1 or D3) is located in a portion where the resistance heating element 2 is an arc having a relatively large radius of curvature, the plurality of divided conductors 3a are arranged in a substantially linear shape. Has been.
  • the three divided conductors 3a are arranged in a triangular shape, for example.
  • the intervals between the plurality of divided conductors 3a corresponding to one power supply unit may be set as appropriate. Further, the interval may be relatively narrow. Even if the plurality of divided conductors 3a are short-circuited, no electrical inconvenience occurs.
  • the wiring 4 has, for example, a cross-sectional area (unless otherwise specified, the cross-sectional area (cross-section perpendicular to the path), the same applies to the resistance heating element 2) larger than the resistance heating element 2. It is configured as follows. More specifically, for example, the width of the wiring 4 is made wider than the width of the resistance heating element 2. As a result, the cross-sectional area of the wiring 4 is larger than the cross-sectional area of the resistance heating element 2. As long as the cross-sectional area of the wiring 4 is larger than the cross-sectional area of the resistance heating element 2, the thickness of the wiring 4 may be smaller than, equal to, or thicker than the resistance heating element 2. Good. When the thickness of the wiring 4 is substantially equal to the thickness of the resistance heating element 2, for example, the difference between them is 10% or less of the thickness of the resistance heating element 2.
  • the magnitude of the size of the cross-sectional area of the wiring 4 compared to the cross-sectional area of the resistance heating element 2 may be set as appropriate.
  • the cross-sectional area of the wiring 4 is 2 times or more or 5 times or more the cross-sectional area of the resistance heating element 2.
  • the width of the wiring 4 is, for example, not less than twice or not less than five times the width of the resistance heating element 2.
  • the resistance heating element 2 has a width of 1 mm to 10 mm, the resistance heating element 2 has a thickness of 10 ⁇ m to 150 ⁇ m, the width of the wiring 4 is about 10 times that of the resistance heating element 2, and the thickness of the wiring 4 The thickness is approximately the same as the thickness of the resistance heating element 2 (the cross-sectional area of the wiring 4 is about 10 times the cross-sectional area of the resistance heating element 2).
  • connection portion of the wiring 4 with the connection conductor 3 may be appropriately set so that the connection with the plurality of divided conductors 3a is possible.
  • the arrangement of the plurality of divided conductors 3 a is substantially along the width direction of the wiring 4, and the length of the arrangement of the plurality of divided conductors 3 a is larger than the width of the wiring 4.
  • the connection portion of the wiring 4 with the connection conductor 3 has two branch portions 4a extending on both sides in the width direction.
  • segmentation conductor 3a such a branch part 4a may not be provided, or the branch part 4a may extend in an appropriate direction. Further, instead of providing the branch portion 4a, a pad-like portion may be formed.
  • the terminal 5 has a diameter larger than that of the divided conductor 3a, for example.
  • the diameter of the terminal 5 is at least twice the diameter of the divided conductor 3a.
  • the diameter of the terminal 5 is substantially equal to the width of the wiring 4, for example. In a case where they are substantially equal, for example, the difference between them is 10% or less of the width of the wiring 4.
  • the terminal 5 connected to the wiring 4 is shown, but the terminal 5 described as being directly connected to the power feeding portion (Pa, Pb, and D2) is also in the axial direction (thickness of the ceramic substrate 1).
  • the shape and dimensions are the same as those of the terminal 5 shown in FIG.
  • the terminal 5 described as being directly connected to the power supply unit (in another aspect, the terminal 5 connected to the power supply unit located in the terminal arrangement region 10d) is also connected to the power supply unit outside the terminal arrangement region 10d.
  • the terminal 5 may be connected to the power feeding portion via a plurality of divided conductors 3 a provided on the second ceramic layer 1 b (a portion in the third ceramic layer 1 c may be the terminal 5).
  • the plurality of divided conductors 3a may be accommodated in the terminal 5 in a plan view, and if not, the layered pattern corresponding to the wiring 4 is formed in the plurality of divided conductors 3a as in the outside of the terminal arrangement region 10d.
  • the terminal 5 may be interposed.
  • the drive device 50 shown in FIG. 1 is configured to include, for example, a power supply circuit and an IC (Integrated Circuit, which is a computer in another viewpoint), and the like. It is converted into DC power and supplied to the ceramic heater 10 (a plurality of terminals 5).
  • the IC includes, for example, a CPU, a ROM, a RAM, and an external storage device, and various functional units such as a control unit are configured by the CPU executing a program stored in the ROM or the like.
  • the control unit or the like may be configured by combining circuits that perform predetermined arithmetic processing.
  • the processing performed by the driving device 50 may be digital processing or analog processing.
  • FIG. 6A is a schematic diagram illustrating an outline of a configuration of a control system in the heater system 100.
  • the resistance heating element 2 is schematically shown by white lines extending in the left-right direction at the upper part of the drawing.
  • the both ends are a pair of main power feeding units P, and a plurality of branch power feeding units D are located in the middle.
  • the symbols or figures around the resistance heating element 2 schematically show the components of the driving device 50.
  • the drive device 50 includes, for example, a main drive unit 51 and an additional drive unit 52.
  • the main drive unit 51 supplies main power (an example of first power, main current) between the pair of main power supply units P. That is, the main drive unit 51 supplies main power to the entire resistance heating element 2.
  • the additional drive unit 52 includes, for example, additional power (an example of second power, additional current) between the power feeding units (P and D) that are adjacent to each other on the path of the resistance heating element 2. Are supplied separately. That is, the additional drive unit 52 individually supplies additional power to the plurality of divided sections Rn.
  • an additional current partially flows in superposition with the main current flowing through the resistance heating element 2.
  • temperature control suitable for the area Ar can be performed for each area Ar of the heater body 10a while realizing most of the heat generated by the heater body 10a by the main power.
  • a case where the temperature distribution is made uniform will be basically described as an example.
  • Main power may be either DC power or AC power.
  • the additional power may be either DC power or AC power. Whether it is direct current or alternating current may be the same between the main power and the additional power, may be different, or may be the same among the plurality of divided sections Rn. May be different.
  • the frequency of the AC power may be the same or different between the main power and the additional power. If they are different, either the main power frequency or the additional power frequency may be higher.
  • the frequency of the AC power as the additional power may be the same or different between the plurality of divided sections Rn. A specific value of the frequency of the AC power may be set as appropriate.
  • the AC power may have a potential that fluctuates at both ends of a section to which power is supplied, or may have a potential that varies only at the other end. The potential fluctuation may be switched between positive and negative with respect to the reference potential, or may not be switched.
  • the main power is DC power.
  • the additional power is AC power.
  • the main power is AC power
  • the additional power is AC power having a higher frequency than the main power.
  • a specific configuration of the drive device 50 is exemplified assuming such a relationship.
  • the specific values of the frequency of the AC power as the main power and the AC power as the additional power may be set as appropriate.
  • the frequency of the main power is 10 Hz or more and 100 Hz or less.
  • the frequency of the main power may be the frequency of the commercial power supply, for example, 50 Hz or 60 Hz in Japan.
  • the frequency of the additional power is 1 kHz to 100 kHz, or 1 kHz to 10 kHz.
  • the magnitude relationship of the power value between the main power and the additional power may be set as appropriate. For example, regardless of fluctuations in the power value for temperature control, the power values of the two may be different to the extent that one maintains a large relationship with respect to the other. The magnitude relationship may vary.
  • the driving device 50 controls the main power and the additional power so that the main power has a power value larger than that of the additional power regardless of fluctuations in the power value for temperature control.
  • FIG. 6B is a diagram schematically illustrating an example of temperature control in the heater system 100.
  • the horizontal axis indicates time and the vertical axis indicates temperature.
  • the driving device 50 controls the main power and the additional power so that the temperature distribution of the heater body 10a becomes uniform and the temperature converges to a target temperature tr0 that is constant over time. .
  • the driving device 50 controls the main power so that the temperature of the heater body 10a becomes a set temperature tra lower than the target temperature tr0 by heating with the main power.
  • FIG. 6B is a schematic diagram.
  • the set temperature tra may be regarded as a target value or a control result.
  • the driving device 50 controls the additional power for each divided section Rn so that the temperature of each divided section Rn (area Ar) becomes the target temperature tr0.
  • FIG. 6B is a schematic diagram, the state in which the temperature obtained by adding the temperature tr0 and the temperature increase tadd is oscillating with respect to the target temperature tr0 is relatively large and expressed by a rectangular wave.
  • vibration may be reduced by employing a precise control method such as PID (Proportional Integral Differential) control.
  • PID Proportional Integral Differential
  • the magnitude relationship between the main power and the additional power may be appropriately set, the magnitude of the set temperature tra (target value) related to the heating by the main power with respect to the target temperature tr0. May be set appropriately.
  • the set temperature tra (° C.) may be 50% or more of the amount of increase from the reference temperature to the target temperature tr0 (° C.), or less than 50%.
  • the set temperature tra (° C.) is an increase from the normal temperature to the target temperature tr0 from the normal temperature (for example, 20 ° which is a median value of normal temperature 20 ° C. ⁇ 15 ° C. defined by Japanese Industrial Standards). It is 90% or more of the amount of increase.
  • the target temperature tr0 when the target temperature tr0 is achieved only by the main power, a temperature difference that can occur in the heater body 10a or the heating object is obtained by experiment or calculation, and a predetermined coefficient (for example, 1 or more and 3 or less) is obtained as the value.
  • the set temperature tra may be obtained by subtracting the value obtained by multiplying by the target temperature tr0.
  • the target temperature tr0 is 650 ° C.
  • the set temperature tra is 620 ° C.
  • the driving device 50 includes, for example, a first insulating transformer T1 to a fourth insulating transformer T4 (hereinafter simply referred to as “insulating transformer T”, which may not be distinguished from each other).
  • the insulation transformer T is provided for each divided section Rn, for example, and mediates the supply of AC power as additional power from the additional drive unit 52 to the divided section Rn.
  • the component may flow to the resistance heating element 2. Can be reduced. This is because the coil impedance (reactance) increases as the frequency increases.
  • the insulation transformer T only needs to insulate the primary side (coil) and the secondary side (coil).
  • the isolation transformer T is configured not only to insulate the primary side and the secondary side but also to improve isolation between the primary side and the secondary side by arranging a shield or the like. (It may be an insulating transformer in a narrow sense).
  • the structure and material of the insulating transformer T may be the same as various known ones.
  • the insulation transformer T cannot change the transformation ratio, and the transformation ratio is constant.
  • the insulation transformer T may be capable of changing the transformation ratio, but the driving device 50 controls (varies) the voltage of the additional power so that the temperature of the heater body 10a follows the target temperature.
  • the transformation ratio of the insulation transformer T is not changed. That is, the transformation ratio of the insulating transformer T is constant regardless of the temperature of the ceramic heater 10. However, even if it is constant regardless of the temperature, it is natural that a variation in error accompanying a temperature change can occur.
  • the transformation ratio of the insulating transformer T may be less than 1, may be 1, or may be more than 1. Other parameters may be set as appropriate.
  • the inductance of the coil of the insulating transformer T may be appropriately set so that the impedance is relatively small at the frequency of the alternating current power as the additional power and the impedance is relatively high at the frequency of the high frequency component to be cut.
  • the driving device 50 includes, for example, a first capacitor C1 to a fourth capacitor C4 (hereinafter simply referred to as “capacitor C”, which may not be distinguished from each other).
  • the capacitor C is provided for each divided section Rn, for example, and is connected in series between the additional drive unit 52 and the divided section Rn.
  • the structure and material of the capacitor C may be the same as various known ones.
  • the capacitance of the capacitor C may be appropriately set so that the impedance is relatively high at the frequency of the DC power or AC power as the main power and the impedance is relatively low at the frequency of the AC power as additional power. .
  • FIG. 7 is an example of a functional block diagram for performing temperature control in the heater system 100.
  • the heater system 100 includes the ceramic heater 10 and the driving device 50 as described above.
  • the drive device 50 includes a main control unit 101 that controls supply of main power, an additional control unit 110 that controls supply of additional power, a temperature measurement unit 130 that measures the temperature of the heater body 10a, and a temperature measurement control unit 150. It has.
  • main drive part 51 demonstrated with reference to FIG. 6A is comprised by the main control part 101, the temperature measurement part 130, and the temperature measurement control part 150, for example.
  • additional drive part 52 demonstrated with reference to FIG. 6A is comprised by the additional control part 110, the temperature measurement part 130, and the temperature measurement control part 150, for example.
  • the temperature measurement unit 130 and the temperature measurement control unit 150 are shared by the main drive unit 51 and the additional drive unit 52.
  • the main control unit 101 converts, for example, power supplied from a commercial power supply or a power supply circuit (not shown) into DC power or AC power having an appropriate voltage, and uses the power as main power through a terminal 5 to form a pair of main power. Supplied to the power feeding unit P At this time, as described with reference to FIG. 6B, the main control unit 101 controls the voltage of the main power so that the set temperature tra is realized by the main power.
  • the set temperature tra is set by a user operation on an input device (not shown), for example.
  • the target temperature tr0 is set by the user's operation on the input device, and the driving device 50 (for example, the main control unit 101 or the temperature measurement control unit 150) performs a predetermined calculation process on the target temperature tr0, and the set temperature tra May be set.
  • the input device may be the same as various known devices.
  • the input device may be a switch that outputs a signal corresponding to the rotational position of the knob, or may be a touch panel.
  • the signal including information on the set temperature tra or the target temperature tr0 output from the input device to the main control unit 101 is, for example, a signal having a voltage value as a signal level (the voltage value varies depending on the information content). .
  • Various other signals to be described later may be signals having such a voltage value as a signal level unless otherwise specified.
  • the control performed by the main control unit 101 is, for example, feedback control based on the actual temperature (detected temperature) of the heater body 10a.
  • the control performed by the main control unit 101 may be open control that does not perform feedback. This is because, as described with reference to FIGS. 6A and 6B, the temperature of each divided section Rn (each area Ar) is also controlled by controlling the additional power.
  • the feedback control method performed by the main control unit 101 may be a known appropriate method.
  • the control may be proportional control, PD (Proportional Differential) control, PI (Proportional Integral) control, or PID control.
  • the control stops power supply when the detected temperature reaches a set temperature (or another temperature or temperature range based on the set temperature), and turns on / off to supply power when the detected temperature does not reach the set temperature. Control may also be used.
  • PID control is adopted as the control method, for example, overshoot and steady deviation can be reduced, and temperature control can be performed with high accuracy.
  • the temperature fed back in the control performed by the main control unit 101 is, for example,
  • the actual temperature of the heater body 10a is not as it is, but is a temperature lower than the actual temperature.
  • the main control unit 101 multiplies the actual temperature by a predetermined coefficient (less than 1) and / or subtracts a predetermined constant from the actual temperature, so that the main control unit 101 sets the set temperature tra.
  • a predetermined coefficient less than 1
  • a calculation process using a map in which an actual temperature and a temperature to be followed are associated with each other may be performed.
  • the coefficient, constant, or calculation method may be different.
  • the driving device 50 performs a predetermined calculation on the target temperature tr0 to set the set temperature tra, a calculation similar to the calculation may be performed on the actual temperature.
  • Information on the actual temperature of the heater body 10 a (a signal including the information) is input from the temperature measurement control unit 150 to the main control unit 101.
  • the division of roles between the main control unit 101 and the temperature measurement control unit 150 may be set as appropriate.
  • the temperature obtained by performing the above calculation on the actual temperature may be input from the temperature measurement control unit 150 to the main control unit 101,
  • the temperature measurement control unit 150 may perform the calculation of the main power voltage value based on the deviation.
  • the actual temperature of the heater body 10a is, for example, the average temperature of the entire heater body 10a.
  • the actual temperature may be a temperature at a specific position of the heater body 10a.
  • the specific position may or may not be a position close to the average temperature of the entire heater body 10a.
  • the temperature of each divided section Rn is appropriately controlled by controlling the additional power for each divided section Rn.
  • the additional control unit 110 converts electric power supplied from a commercial power supply or a power supply circuit (not shown) into AC power having an appropriate voltage, and supplies the electric power as additional power to the plurality of divided sections Rn via the terminal 5. To do. At this time, as described with reference to FIG. 6B, the additional control unit 110 controls the additional power for each divided section Rn so that the target temperature tr0 is realized by superimposing the additional power on the main power. As already mentioned, the target temperature tr0 is set by a user operation on an input device (not shown), for example.
  • the control performed by the additional control unit 110 is, for example, feedback control based on the actual temperature (detected temperature) of the heater body 10a.
  • the feedback control method performed by the additional control unit 110 may be a known appropriate one, as with the main control unit 101, such as proportional control, PD control, PI control, PID control, and on / off control. .
  • PID control is adopted as a control method, for example, overshoot and steady deviation can be reduced, and temperature control can be performed with high accuracy.
  • the temperature fed back in the control performed by the additional control unit 110 is different from the main control unit 101, for example, and may be the actual temperature. Then, the additional control unit 110 performs control so that the actual temperature becomes the target temperature tr0. As a result, the difference between the target temperature tr0 and the temperature fed back in the control of the main control unit 101 (temperature lower than the actual temperature) is realized by the additional power.
  • Information on the actual temperature of the heater body 10a (a signal including the information) is input from the temperature measurement control unit 150 to the additional control unit 110.
  • the actual temperature of the heater body 10a is, for example, the temperature of each divided section Rn.
  • the division of roles of the additional control unit 110 and the temperature measurement control unit 150 may be set as appropriate.
  • the deviation between the target temperature tr0 and the actual temperature may be input from the temperature measurement control unit 150 to the additional control unit 110, or based on the deviation.
  • the temperature measurement control unit 150 may perform the calculation until the voltage value of the additional power is calculated.
  • the additional control unit 110 may perform control at a cycle shorter than the cycle of control in the main control unit 101 (cycle in which change or maintenance of the operation amount is determined), for example. In this case, for example, the additional control unit 110 can quickly cope with a temperature change caused by the control of the main control unit 101, so that the actual temperature easily converges to the target temperature tr0.
  • the additional control unit 110 is, for example, a shared power supply device 102 that is provided in common to the plurality of divided sections Rn, and a branch that is provided for each divided section Rn and that supplies power from the shared power supply apparatus 102 to the divided section Rn.
  • Control units 111 to 114 and power amplifiers 121 to 124 are provided.
  • the branch control unit 111 and the power amplifier 121 correspond to the first divided section R1.
  • the branch control unit 112 and the power amplifier 122 correspond to the second divided section R2.
  • the branch control unit 113 and the power amplifier 123 correspond to the third divided section R3.
  • the branch control unit 114 and the power amplifier 124 correspond to the fourth divided section R4.
  • the shared power supply device 102 converts electric power supplied from a commercial power supply or a power supply circuit (not shown) into AC power having a predetermined frequency.
  • the frequency of this AC power is, for example, the same as the frequency of AC power as additional power supplied to the plurality of divided sections Rn.
  • the shared power supply apparatus 102 is shared by the plurality of divided sections Rn, for example, the configuration of the additional control unit 110 is reduced in size.
  • the configuration of the branch control units 111 to 114 may be the same.
  • the power amplifiers 121 to 124 may have the same configuration. Below, the branch control part 111 and the power amplifier 121 corresponding to 1st division
  • the branch control unit 111 and the power amplifier 121 serve as additional power supplied to the first isolation transformer T1 so that the actual temperature of the first divided section R1 input from the temperature measurement control unit 150 follows the target temperature tr0. Control the voltage of AC power.
  • the branch control unit 111 outputs a signal of a signal level corresponding to the deviation between the target temperature tr0 and the actual temperature of the first divided section R1 input from the temperature measurement control unit 150.
  • appropriate control such as PID control may be performed.
  • the power amplifier 121 amplifies the power of the signal from the branch control unit 111 with a constant amplification factor and outputs the amplified power to the first isolation transformer T1.
  • the power value is controlled by the branch control unit 111.
  • AC power having the same frequency as the additional power is supplied from the shared power supply device 102 to each of the branch control unit 111 and the power amplifier 121.
  • the additional power finally supplied to the first isolation transformer T1 may be AC power, and a DC signal may be appropriately used in the process.
  • the branch control unit 111 may perform a compensation process for a change in resistivity accompanying a temperature change. For example, the gain when determining the signal level (voltage value of the additional power) based on the deviation may be adjusted based on the temperature change. Thereby, temperature control with higher accuracy becomes possible.
  • the resistance heating element 2 is also used as an element (thermistor) for detecting temperature. That is, the temperature measurement unit 130 outputs a signal level signal corresponding to the change in resistivity of the resistance heating element 2. Thereby, the temperature of the heater main body 10a (strictly, the resistance heating element 2) can be specified.
  • the change in resistivity may be detected in an appropriate section on the path of the resistance heating element 2.
  • the power feeding portions (P and D) for supplying power to the resistance heating element 2 are also used as a part for detecting a change in resistivity of the resistance heating element 2 (detecting a voltage). Yes.
  • the average temperature of the entire resistance heating element 2 (between a pair of main power feeding parts P) and the temperature in each divided section Rn (between adjacent feeding parts (P or D) of the resistance heating element 2) It can be detected.
  • a part for detecting a potential may be set separately from the power feeding unit.
  • the temperature measurement unit 130 includes resistance elements R0, R5, R7, R9, and R12, LPFs (Low-Pass Filters) 131 to 135, and measurement amplifiers 141 to 145.
  • resistance elements R0, R5, R7, R9, and R12 resistance elements R0, R5, R7, R9, and R12, LPFs (Low-Pass Filters) 131 to 135, and measurement amplifiers 141 to 145.
  • LPFs Low-Pass Filters
  • the resistance element R0 is provided for specifying the current flowing in the resistance heating element 2 by the main power, and between the main control unit 101 and the resistance heating element 2. They are connected in series.
  • the resistance value of the resistance element R0 is made smaller than the resistance value of the resistance heating element 2, for example.
  • the resistance value of the resistance element R0 is 1/100 or less of the resistance value of the resistance heating element 2 as a whole.
  • the sign of the second main power feeding part Pb (here, grounded) is shown not in the ceramic heater 10 but in the temperature measurement part 130, and the resistance element R 0 is connected to the main control part 101 and the resistance. It is shown that they are connected in series with the heating element 2.
  • the second main power feeding portion Pb is located in the ceramic heater 10, and the resistance element R 0 is located outside the ceramic heater 10.
  • the resistance element R0 can also be provided in the ceramic heater 10 (between a pair of main power feeding portions P).
  • the temperature coefficient of the resistance element R0 (the rate of change of the resistivity with respect to the temperature change) may be the same as or different from that of the resistance heating element 2.
  • the temperature coefficients of both are naturally the same.
  • Resistance elements R5, R7, R9 and R12 are for voltage division and may be regarded as a part of LPF 131-134.
  • the resistance values of the resistance elements R5, R7, R9 and R12 and the LPFs 131 to 134 are set larger than the resistance value of the resistance heating element 2.
  • the resistance value of each of the resistance elements R5, R7, R9, and R12 is 1000 times or more the resistance value of the resistance heating element 2 as a whole.
  • the LPFs 131 to 135 remove high frequency components (noise components) from the voltage signal from the resistance heating element 2.
  • the configuration may be similar to various known ones.
  • the LPFs 131 to 135 include a capacitor in which one electrode is connected between the resistance heating element 2 and the measurement amplifiers 141 to 145 and the other electrode is grounded.
  • the pass bands of the LPFs 131 to 135 may be appropriately set so as to allow passage of a signal having a frequency equal to or lower than the frequency of the additional power (the higher power of the main power and the additional power). .
  • the measurement amplifiers 141 to 145 amplify the voltage signals output from the LPFs 131 to 135 and output them to the temperature measurement control unit 150.
  • the configuration may be similar to various known ones.
  • the measurement amplifiers 141 to 145 may be appropriately supplied with DC power or AC power from a power circuit (not shown) or the like.
  • the measurement amplifier 141 and the LPF 131 are connected to the first branch power feeding part D1 and the second main power feeding part Pb, and detect the voltage V1 between the two power feeding parts (R0 and R1).
  • the measurement amplifier 142 and the LPF 132 are connected to the second branch power feeding unit D2 and the second main power feeding unit Pb, and detect the voltage V2 between the two power feeding units (R0 to R2).
  • the measurement amplifier 143 and the LPF 133 are connected to the third branch power feeding unit D3 and the second main power feeding unit Pb, and detect the voltage V3 between the two power feeding units (R0 to R3).
  • the measurement amplifier 144 and the LPF 134 are connected to the first main power feeding part Pa and the second main power feeding part Pb, and detect the voltage V4 between the two power feeding parts (R0 to R4).
  • the measurement amplifier 145 and the LPF 135 are connected between the resistance element R0 and the first divided section R1 and are connected to the second main power feeding part Pb, and detect the voltage Ki at the resistance element R0.
  • Information on the detected voltage Ki and V1 to V4 (a signal including the information) is input to the temperature measurement control unit 150.
  • the temperature measurement control unit 150 specifies the average temperature of the entire resistance heating element 2 and the temperature in each of the plurality of divided sections Rn based on the information on the voltages Ki and V1 to V4 input from the temperature measurement unit 130. Then, the temperature measurement control unit 150 inputs information on the average temperature of the resistance heating element 2 as a whole (temperature t0 described later) to the main control unit 101, and the temperature of a plurality of divided sections Rn (temperatures t1 to t4 described later). Is input to the additional control unit 110 (branch control units 111 to 114).
  • the temperature measurement control unit 150 performs, for example, the following calculation, and specifies the temperature of the resistance heating element 2 based on the voltage Ki and the information on V1 to V4.
  • the resistance value of the resistance element R0 is r0 [ ⁇ ].
  • the resistance element R0 is connected in series to the resistance heating element 2
  • the current I can be regarded as a current that flows through the resistance heating element 2 by the main power supplied by the main control unit 101. it can.
  • the influence of the temperature change of r0 is ignored because it is relatively small.
  • the resistance values at a predetermined reference temperature in the resistance element R0 and the first divided section R1 to the fourth divided section R4 are r0 to r4 [ ⁇ ], and the temperature coefficients of the resistive element R0 and the resistance heating element 2 are ⁇ [1 / ° C.]. And the average temperature of the entire resistance heating element 2 is t0.
  • the temperature change of the temperature coefficient ⁇ is not considered, and the reference temperature (the temperature when the resistance values of R0 to R4 are r0 to r4) is 0 [° C. ].
  • the temperature coefficient ⁇ is, for example, 0.004.
  • the voltage V4 in R0 to R4 considering the influence of temperature is expressed by the following equation.
  • t0 ((V4 / ((Ki / r0). (r0 + r1 + r2 + r3 + r4)))-1) / ⁇ (3) Accordingly, the temperature measurement control unit 150 substitutes the values of r0 to r4 and ⁇ held in advance and the voltages Ki and V4 input from the temperature measurement unit 130 into the equation (3), so that the resistance heating element 2 The overall average temperature t0 can be calculated.
  • t1 ((V1 / ((Ki / r0) ⁇ (r0 + r1))) ⁇ 1) / ⁇ ... (5) Therefore, the temperature measurement control unit 150 substitutes the values of r0, r1 and ⁇ held in advance and the voltages Ki and V1 input from the temperature measurement unit 130 into the first divided section. The temperature t1 of R1 can be calculated.
  • the expression (5) can be used as an expression for specifying the temperatures t2 to t4 of the second divided section R2 to the fourth divided section R4.
  • the temperature change of the temperature coefficient ⁇ is ignored or the reference temperature is set to 0 ° C., but these may be considered.
  • the temperature change is ignored, the temperature is regarded as equivalent to the temperature of the resistance heating element 2, the voltage at the resistance element R0 is appropriately ignored, and the obtained temperature.
  • the resistance value of the resistance element R0 is extremely smaller than the resistance value of the resistance heating element 2 as described above.
  • the influence of the resistance element R0 may be taken into account. For example, an appropriate correction coefficient may be multiplied, or a positive or negative correction constant may be added.
  • a method for manufacturing the ceramic heater 10 is, for example, as follows.
  • ceramic green sheets to be the first ceramic layer 1a to the third ceramic layer 1c are prepared.
  • the green sheet may be formed, for example, by forming a slurry into a sheet form by a doctor blade method, or by spray-drying the slurry by a spray granulation method (spray dry method) and using a roll compaction method. May be formed.
  • the green sheet is formed with a substantially constant thickness.
  • a main component material is prepared so that aluminum oxide, aluminum nitride, silicon nitride, or silicon carbide is a main component, and a predetermined amount of a sintering aid, a binder, a solvent, a dispersant, and the like is added thereto. Made by mixing.
  • a metal paste to be a conductor such as the resistance heating element 2, the connection conductor 3, the wiring 4, and the terminal 5 is disposed on the green sheet by an appropriate method such as screen printing.
  • a metal paste that becomes the resistance heating element 2 is disposed on the upper surface of the green sheet that becomes the second ceramic layer 1b (or the lower surface of the green sheet that becomes the first ceramic layer 1a).
  • a metal paste to be the wiring 4 is disposed on the upper surface of the green sheet to be the third ceramic layer 1c (or the lower surface of the green sheet to be the second ceramic layer 1b).
  • a hole formed in the green sheet that becomes the second ceramic layer 1 b is filled with a metal paste that becomes the connection conductor 3.
  • a hole formed in the green sheet to be the third ceramic layer 1 c is filled with a metal paste to be the terminal 5.
  • green sheets are laminated to produce a green sheet laminate.
  • the slurry mentioned above is just to use the slurry mentioned above as a joining material used when laminating
  • the green sheet laminate is fired according to the firing conditions of the main component. Thereby, the sintered compact (ceramic base material 1) which provided the resistance heating body 2, the connection conductor 3, the wiring 4, and the terminal 5 inside can be obtained.
  • connection conductor 3 In addition to the resistance heating element 2, the connection conductor 3, the wiring 4 and the terminal 5, a metal paste, a metal plate, or a metal mesh to be a plasma processing electrode or an electrostatic chuck electrode is sandwiched at the time of lamination so that the plasma processing electrode is used.
  • a table or electrostatic chuck can also be produced.
  • the heater system 100 includes the ceramic heater 10 and the driving device 50.
  • the ceramic heater 10 has a ceramic substrate 1 and a resistance heating element 2.
  • the ceramic substrate 1 has an upper surface 10c.
  • the resistance heating element 2 extends along the upper surface 10 c on the inside or the surface (in the present embodiment) of the ceramic substrate 1.
  • the driving device 50 includes a main driving unit 51 that supplies main power to the entire resistance heating element 2 and an additional driving unit that supplies additional power to the divided section Rn that is a part of the resistance heating element 2 so as to be superimposed on the main power. 52.
  • temperature control of the divided section Rn can be performed in accordance with individual circumstances of the divided section Rn while performing main heating with the main power.
  • a desired temperature gradient can be realized.
  • the additional drive unit 52 supplies additional power to each of the plurality of divided sections Rn obtained by dividing the resistance heating element 2 into a plurality and individually controls the additional power to the plurality of divided sections Rn. To do.
  • temperature control according to the individual circumstances described above can be performed over the entire resistance heating element 2 while performing main heating with the main power.
  • it is further facilitated to make the temperature uniform or to achieve a desired temperature gradient.
  • the number of power supply units is twice the number of resistance heating elements.
  • the number of power feeding units may be n + 1 when the number of the plurality of divided sections Rn is n (> 2). That is, the number of power feeding units can be reduced.
  • the main power is DC power and the additional power is AC power, or the main power is AC power and the additional power is AC power having a higher frequency than the main power.
  • the main power and the additional power are not at the same frequency, the possibility that they are synchronized is reduced, and as a result, the superposition of the power is ensured.
  • the possibility that the main power generates high-frequency noise is reduced.
  • the ceramic heater 10 in a device that uses a high-frequency voltage such as a plasma processing device, and it is easy to use a power larger than the additional power as the main power.
  • the DC power has a lower instantaneous voltage than the AC power having the same effective voltage. By using such DC power as main power for main heating, the life of the ceramic heater 10 as a whole is extended.
  • the driving device 50 includes a capacitor C connected in series between the additional driving unit 52 and the divided section Rn.
  • the main current which is a direct current or an alternating current having a relatively low frequency flows to the additional drive unit 52 side, an alternating current having a relatively high frequency.
  • the additional current can be passed to the resistance heating element 2.
  • the additional drive unit 52 supplies the additional power while controlling the voltage of the AC power as the additional power according to the temperature of the ceramic heater 10.
  • the driving device 50 further includes an insulating transformer T that transmits the additional power supplied from the additional driving unit 52 to the divided section Rn at a constant transformation ratio regardless of the temperature of the ceramic heater 10.
  • the main drive unit 51 controls the main power based on a change in the overall resistance value of the resistance heating element 2.
  • the resistance heating element 2 is also used for temperature detection. Therefore, for example, it is not necessary to provide a temperature sensor separately from the resistance heating element 2, and the configuration of the ceramic heater 10 can be simplified and reduced in size. Further, for example, a pair of main power feeding portions P for supplying power to the resistance heating element 2 can also be used as a part for detecting a change in the resistance value of the resistance heating element 2. As a result, for example, the configuration related to the connection conductor 3, the wiring 4, and / or the terminal 5 can be simplified and reduced in size. A mode in which a temperature sensor is provided separately from the resistance heating element 2 is also included in the technology according to the present disclosure.
  • the additional driving unit 52 controls the additional power based on the change in the resistance value in the divided section Rn of the resistance heating element 2.
  • the resistance heating element 2 is also used for temperature detection, it is not necessary to provide a separate temperature sensor, and the connection conductor 3, the wiring 4 and / or the terminal 5 are also used for temperature detection.
  • the structure of the ceramic heater 10 can be simplified and reduced in size.
  • segmentation area Rn separately from the resistance heating element 2 is also contained in the technique which concerns on this indication.
  • At least one (D1 and D3 in the present embodiment) of the plurality of power supply portions (P and D) that are both ends of the resistance heating element 2 and the ends of the divided section Rn is a plane of the upper surface 10c. In view, it is located outside the terminal arrangement region 10 d that is a part of the center side of the ceramic substrate 1.
  • the ceramic heater 10 includes a plurality of terminals 5, connection conductors 3, and wirings 4.
  • the plurality of terminals 5 are electrically connected to the plurality of power feeding portions (P and D), exposed to the outside of the ceramic base 1 to the opposite side of the upper surface 10c, and are arranged in the terminal arrangement region 10d in a plan view of the upper surface 10c. positioned.
  • connection conductor 3 protrudes from the power supply portions (D1 and D3) located outside the terminal arrangement region 10d among the plurality of power supply portions to the opposite side to the upper surface 10c.
  • the wiring 4 extends from the connection conductor 3 into the terminal arrangement region 10d on the side opposite to the upper surface 10c with respect to the resistance heating element 2 in the ceramic substrate 1 or on the surface (in this embodiment), and is connected to the plurality of terminals 5. Is connected with either.
  • the branch power feeding unit D can be set at an arbitrary position of the resistance heating element 2 while the terminal 5 is positioned in the terminal arrangement region 10d. As a result, for example, it is easy to appropriately set the length of the divided section Rn.
  • the wiring 4 extends parallel to the upper surface 10c.
  • the influence of the current flowing through the wiring 4 on the resistance heating element 2 is likely to be equal between the center side and the outside in a plan view. As a result, for example, a possibility that an unintended temperature gradient is locally generated is reduced.
  • the area of the cross section of the wiring 4 is larger than the area of the cross section of the resistance heating element 2.
  • the amount of heat generated in the wiring 4 can be reduced.
  • wasteful power consumption can be reduced, and the temperature of the resistance heating element 2 or the upper surface 10c can be controlled with high accuracy.
  • connection conductor 3 that connects one power feeding unit (D1 or D3 in the present embodiment) and one wiring 4 is positioned along the path of the resistance heating element 2. It includes a plurality of divided conductors 3a connected in parallel between one power supply section (D1 or D3) and the one wiring 4.
  • the conduction area can be increased, but the power feeding unit and the portion other than the power feeding unit of the resistance heating element 2 However, in this embodiment, such a risk is reduced.
  • a conduction area can be ensured by using a conventionally known through conductor having a substantially circular shape in a direction orthogonal to the through direction.
  • the ceramic heater 10 includes the ceramic substrate 1, the resistance heating element 2, and 1 to n-th pieces (n is 3) for supplying power to the resistance heating element 2.
  • the above-mentioned natural number) electrodes (for example, power feeding parts P and D) are provided.
  • the first electrode and the nth electrode are electrodes to which main power is supplied between them.
  • Two adjacent electrodes in the resistance heating element 2 are electrodes to which additional power is supplied.
  • temperature control according to individual circumstances of the plurality of divided sections Rn can be performed while performing main heating with the main power.
  • the temperature of the heater body 10a can be made uniform.
  • the upper surface 10c is an example of a predetermined surface.
  • the entire resistance heating element 2 is an example of the first section.
  • Each of the plurality of divided sections Rn is an example of a second section.
  • the power feeding unit (P and D) is an example of an electrode.
  • the main power is an example of the first power.
  • the additional power is an example of the second power.
  • FIG. 8A is a bottom view showing the heater body 210a of the ceramic heater 210 according to the second embodiment, or a perspective view seen from the bottom side. In this figure, the outer edge of the heater main body 210a and the power feeding portions (Pa, Pb and D1 to D3) are shown.
  • FIG. 8B is a diagram showing a path of the resistance heating element 2 of the ceramic heater 210.
  • This figure shows a partial range of the ceramic heater 210 in plan view. Moreover, this figure respond
  • FIG. 8B is a diagram showing a path of the resistance heating element 2 of the ceramic heater 210. This figure shows a partial range of the ceramic heater 210 in plan view. Moreover, this figure respond
  • the second embodiment is different from the first embodiment only in the path of the resistance heating element 2 and the position of the power feeding unit (P and D). Further, with the difference in the position of the power feeding unit, the positions of the connection conductor 3 and the wiring 4 are also different from those in the first embodiment. Other configurations (including the driving device 50) may be the same as in the first embodiment.
  • the resistance heating element 2 has a substantially spiral pattern in plan view. That is, the resistance heating element 2 extends so as to circulate while shifting from the inner periphery to the outer periphery.
  • the distance between one circumference and the next circumference may be the same on the inner circumference side and the outer circumference side, or may be different. Further, the distance between one circumference and the next circumference may be constant in the circumferential direction or may vary.
  • the position shift from the inner circumference to the outer circumference may gradually occur during one round in each circumference, or may occur with a step at a specific position after one round with a certain radius in each circumference. .
  • resistance heating element 2 may simply circulate as illustrated, or may circulate while reciprocating (meandering) unlike the illustrated case.
  • the first power feeding portion Pa that is one end of the resistance heating element 2 is located, for example, in the approximate center of the ceramic substrate 1, and the second main power feeding portion Pb that is the other end of the resistance heating element 2 is, for example, a ceramic substrate. 1 adjacent to the outer edge.
  • the first branch power feeding unit D1 to the third branch power feeding unit D3 may be provided at an appropriate midway position of the resistance heating element 2.
  • the first branch power feeding unit D1 to the third branch power feeding unit D3 may be provided so as to equally divide the resistance heating element 2 (four in the illustrated example).
  • the first branch power feeding unit D1 to the third branch power feeding unit D3 may be provided unevenly in consideration of, for example, a temperature distribution that is likely to occur in the ceramic heater 10.
  • connection conductor 3 wiring 4, and terminal 5 may be provided as in the first embodiment.
  • FIG. 9A is a perspective view showing the position of the wiring 4 in FIG. 8A.
  • FIG. 9B is a cross-sectional view taken along the line IXb-IXb in FIG. 9A.
  • the terminal 5 connected to the plurality of power feeding units (P and D) is located in a terminal arrangement region defined by the pipe 210b.
  • the first power supply unit Pa is located in the terminal arrangement region, but the other power supply units (Pb, D1 to D3) are located outside the terminal arrangement region.
  • the power feeding portions (Pb, D1 to D3) located outside the terminal arrangement area and the terminal 5 are connected to the terminal 5 by the connection conductor 3 and the wiring 4.
  • the first power feeding portion Pa located in the terminal arrangement region is directly connected to the terminal 5.
  • the connection conductor 3 may be composed of a plurality of divided conductors 3a (FIG. 5), and the first power feeding portion Pa that is directly connected to the terminal 5 is also connected to the terminal 5 by the connection conductor 3 or the like. What is good is the same as in the first embodiment.
  • the heater system supplies additional power to the main drive unit 51 that supplies main power to the resistance heating element 2 and the divided section Rn that is a part of the resistance heating element 2 so as to overlap the main power.
  • an additional driving unit 52 the ceramic heater 10 includes the ceramic base 1, the resistance heating element 2, and the 1 to n-th (n is a natural number of 3 or more) 1 to n power supplying the resistance heating element 2. Electrodes (for example, power feeding parts P and D). The first electrode and the nth electrode are electrodes to which main power is supplied between them. Two adjacent electrodes in the resistance heating element 2 are electrodes to which additional power is supplied.
  • temperature control according to the individual circumstances of the plurality of divided sections Rn can be performed while performing main heating with main power.
  • FIGS. 10A to 10D are schematic views showing various modifications. Specifically, FIGS. 10A to 10C are cross-sectional views corresponding to FIG. FIG. 10D is a schematic circuit diagram of the heater system. 10A to 10C show the first embodiment as the path of the resistance heating element 2, but these modified examples may be applied to the second embodiment.
  • the resistance heating element 2 may be located not on the inside of the ceramic substrate 301 but on the surface (lower surface) of the ceramic substrate 301.
  • the ceramic substrate 301 may be configured only from the first ceramic layer 1a (corresponding to the ceramic layer) of the first embodiment.
  • connection conductor 3 the wiring 4, and the terminal 5 (terminal 5 is a through conductor from another viewpoint) provided in the first embodiment are not provided, and the power feeding unit (P And D) may function as terminals.
  • the terminal may not be located on the center side of the ceramic heater in plan view, and the pipe 10b may not be provided.
  • an insulating layer made of a material different from ceramic is provided on the lower surface of the ceramic heater 310 so as to cover the resistance heating element 2 while exposing the power feeding portion. May be.
  • the resistance heating element 2 is not embedded in the ceramic base 301, it may be embedded in an insulating base composed of the ceramic base 301 and an insulating layer (not shown).
  • the power feeding units may function as terminals as in FIG. 10A.
  • the ceramic substrate 401 may be composed of only the first ceramic layer 1a and the second ceramic layer 1b (corresponding ceramic layers) of the first embodiment.
  • the power feeding portion that also serves as a terminal is exposed from the lower surface of the ceramic base 401 to the outside of the ceramic base 401 by forming a hole 401h that exposes the power feeding portion in the second ceramic layer 1b.
  • the terminal 5 (through conductor from another viewpoint) may be arranged inside the hole 401h.
  • the wiring 4 may be located on the surface (lower surface) of the ceramic base 501 instead of inside the ceramic base 501.
  • the ceramic base 501 may be composed only of the first ceramic layer 1a and the second ceramic layer 1b (corresponding to the ceramic layer) of the first embodiment.
  • the end of the wiring 4 may function as the terminal 5 as shown in FIG. 10C.
  • a portion other than the portion functioning as the terminal 5 may be defined as the wiring 4.
  • an insulating layer for example, a solder resist
  • 507 is provided to cover the wiring 4 while exposing a portion that becomes the terminal 5 in the wiring 4.
  • such an insulating layer 507 is not essential.
  • the third ceramic layer 1c exposes a part of the wiring 4 in the first embodiment so that the insulating layer 507 exposes a part of the wiring 4, and the exposed part serves as the terminal 5. May function.
  • the additional driving unit 52 does not need to supply additional power to all of the plurality of divided sections Rn that divide the resistance heating element 2, and a part (one or more) of the plurality of divided sections Rn. Additional power may be supplied only to a number that is two or more and not all. In the illustrated example, additional power is supplied to only one of the two divided sections Rn.
  • the configuration of the additional drive unit 52 is simplified as compared with a case where additional power is supplied to all of the plurality of divided sections Rn.
  • the first additional power is superimposed on the main power in the first divided section R1 and the second divided section R2, and the second additional power is further superimposed in the second divided section R2. It is also possible to vary the number of superposed electric power depending on the section.
  • FIG. 11A is a diagram illustrating an application example to which the heater system of the present disclosure is applied.
  • FIG. 11A shows a state in which the ceramic heater 30 according to the present disclosure is provided in the chamber 25 of the semiconductor manufacturing apparatus. On the upper surface of the ceramic heater 30, a wafer 40 as an object to be heated is placed.
  • FIG. 11B is a schematic diagram showing the configuration of the ceramic heater 30.
  • the ceramic heater 30 has, for example, the same configuration as any of the ceramic heaters according to the above-described various embodiments or modifications, or a configuration in which the electrode 12 and the like are added to the same configuration.
  • the electrode 12 is, for example, a plasma processing electrode (for example, an RF (Radio Frequency) electrode).
  • a plasma processing electrode for example, an RF (Radio Frequency) electrode.
  • the system including the ceramic heater 30, the driving device 50, and a driving device (not shown) that applies a voltage to the plasma processing electrode constitutes the plasma processing device.
  • the electrode 12 is, for example, an electrostatic chuck electrode.
  • the ceramic heater 30 constitutes an electrostatic chuck.
  • the system including the ceramic heater 30, the driving device 50, and the driving device (not shown) that applies a voltage to the electrostatic chuck electrode constitutes an adsorption device.
  • the ceramic heater 30 may be applied to a hot press heater used for a CVD process in semiconductor manufacturing.
  • the wiring 4 may not be parallel to the resistance heating element 2.
  • the ceramic heater having such a configuration can be manufactured by, for example, producing a sintered body (ceramic substrate 1) by a hot press method and embedding a wire to be a wiring 4 at that time.
  • connection conductor 3 is not limited to the one constituted by the plurality of divided conductors 3a, and may be constituted by one through conductor.
  • the capacitor C or the insulation transformer T may not be provided.
  • SYMBOLS 1 Ceramic base material, 2 ... Resistance heating element, 10 ... Ceramic heater, 10c ... Upper surface (predetermined surface), 50 ... Drive apparatus, 51 ... Main drive part, 52 ... Additional drive part.

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Abstract

L'invention concerne un système de chauffage qui comporte un élément de chauffage en céramique et un dispositif d'entraînement. L'élément de chauffage en céramique comprend un substrat en céramique et un corps de chauffage à résistance. Le substrat en céramique comprend une surface supérieure. Le corps de chauffage à résistance s'étend le long de la surface supérieure du substrat en céramique à l'intérieur et sur la surface du substrat en céramique. Le dispositif d'entraînement comprend une unité d'entraînement principale, destinée à fournir une énergie principale à la totalité du corps de chauffage à résistance, et une unité d'entraînement supplémentaire, destinée à fournir une énergie supplémentaire à une section divisée qui est une partie du corps de chauffage à résistance, en se superposant à la puissance principale.
PCT/JP2017/016229 2016-04-28 2017-04-24 Système de chauffage, élément de chauffage en céramique, dispositif de traitement par plasma et dispositif d'absorption Ceased WO2017188189A1 (fr)

Priority Applications (2)

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US16/096,314 US11031271B2 (en) 2016-04-28 2017-04-24 Heater system, ceramic heater, plasma treatment system, and adsorption system
JP2018514588A JP6806768B2 (ja) 2016-04-28 2017-04-24 ヒータシステム、セラミックヒータ、プラズマ処理装置及び吸着装置

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WO2019131611A1 (fr) * 2017-12-28 2019-07-04 株式会社Maruwa Dispositif en céramique
JP2019125635A (ja) * 2018-01-15 2019-07-25 日本特殊陶業株式会社 保持装置
WO2019190797A1 (fr) * 2018-03-27 2019-10-03 Lam Research Corporation Connecteur pour support de substrat à capteurs de température intégrés
JP2020004820A (ja) * 2018-06-27 2020-01-09 京セラ株式会社 試料保持具
KR20200047653A (ko) 2017-10-27 2020-05-07 교세라 가부시키가이샤 히터 및 히터 시스템
WO2020090380A1 (fr) * 2018-10-30 2020-05-07 京セラ株式会社 Structure de type panneau et système de radiateur
WO2020090379A1 (fr) * 2018-10-30 2020-05-07 京セラ株式会社 Structure de type panneau et système de chauffage
JP2020161589A (ja) * 2019-03-26 2020-10-01 日本碍子株式会社 半導体製造装置用部材、その製法及び成形型
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