WO2017175428A1 - Hard gold plating solution - Google Patents
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- WO2017175428A1 WO2017175428A1 PCT/JP2016/088430 JP2016088430W WO2017175428A1 WO 2017175428 A1 WO2017175428 A1 WO 2017175428A1 JP 2016088430 W JP2016088430 W JP 2016088430W WO 2017175428 A1 WO2017175428 A1 WO 2017175428A1
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- gold
- gold plating
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/62—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of gold
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- the present invention relates to a hard gold plating solution for electrolysis.
- Gold plating films have been widely used as surface treatments for connection terminals of various electronic parts such as connectors, utilizing the excellent electrical properties and corrosion resistance of gold. Since hard gold plating in such applications requires good wear resistance, corrosion resistance, electrical conductivity, etc., it is necessary to control the crystals constituting the gold plating film. Therefore, as shown in Patent Document 1, a cobalt salt, a nickel salt, or the like has been added to a gold plating solution as a crystal adjusting agent for a gold plating film.
- Copper materials such as brass and phosphor bronze are generally used as materials for connectors and the like.
- a nickel plating film is formed as a base plating, and gold plating is applied thereon.
- a partial plating process is required in order to prevent the solder from creeping up to unnecessary portions during the soldering process for electrical connection. That is, when hard gold plating is performed on a nickel plating film, selective plating properties are required in which a hard gold plating film is formed at a necessary portion and a gold plating film is not formed at an unnecessary portion. Further, by not performing gold plating on unnecessary portions, money saving and cost reduction can be realized.
- Patent Document 2 in a gold-cobalt alloy plating solution containing gold and cobalt, while maintaining a weak acidity, by adding hexamethylenetetramine, a necessary part of an electronic component such as a connector
- Patent Document 2 Only a technique for selectively forming a gold-cobalt alloy plating has been proposed. According to Patent Document 2, the technique can form a good plating film in the high current density region, but the plating deposition property is poor in the low current density region. Since plating deposition does not occur, it is said that the plating deposition selectivity is excellent.
- gold is actually deposited in unnecessary portions, and it is difficult to grasp the consumption amount of the organic compound used, and the plating bath management cannot be performed quickly. There was a problem.
- the present applicants disclosed “soluble gold salt or gold complex, conductive salt, malic acid, acetic acid, maleic acid, succinic acid, citric acid, glycine, arginine, and salts thereof disclosed in Patent Document 3 as disclosed in Patent Document 3.
- a hard gold plating solution containing one or more selected from the group consisting of at least one metal salt selected from a cobalt salt, a nickel salt, and a silver salt, hydrogen peroxide or iodate is included It has been proposed to adopt a hard gold plating solution characterized by
- Patent Document 3 there is an inconvenience that even if terminal plating of electronic parts such as connectors is performed, the phenomenon of gold deposition on the above-mentioned unnecessary portions cannot be completely suppressed.
- an object of the present invention is to provide a hard gold plating solution capable of reliably suppressing gold deposition on unnecessary portions.
- the hard gold plating solution according to the present application is a hard gold plating solution for electrolytic plating containing a gold ion supply raw material, a conductive salt, a complexing agent, a metal salt containing an alloy element for gold, and a gold deposition control agent.
- the gold ion feedstock is contained in an amount of 0.5 g / L to 14 g / L in terms of gold, the solution specific gravity at a solution temperature of 25 ° C. is 2 ° Be ′ to 16 ° Be ′, and the electrical conductivity at a solution temperature of 25 ° C. is 10 mS. / Cm to 70 mS / cm.
- the hard gold plating solution according to the present application preferably has a solution specific gravity of 5 ° Be ′ to 10 ° Be ′.
- the hard gold plating solution according to the present application preferably has an electric conductivity of 28 mS / cm to 50 mS / cm.
- the metal salt containing the alloying element for gold is preferably one or more selected from a cobalt salt, a nickel salt, and a silver salt.
- the metal salt is a cobalt salt
- it is preferably contained in an amount of 0.025 g / L to 5 g / L in terms of cobalt.
- the metal salt is a nickel salt, it is preferably contained in an amount of 0.025 g / L to 5 g / L in terms of nickel.
- the metal salt is a silver salt, it is preferably contained in an amount of 0.025 g / L to 60 g / L in terms of silver.
- the gold deposition control agent is hydrogen peroxide and has a concentration of 0.05 g / L to 50 g / L.
- the hard gold plating solution according to the present application contains a gold ion supply raw material, a conductive salt, a complexing agent, a metal salt containing an alloy element for gold, and a gold precipitation controlling agent, and a solution specific gravity at a solution temperature of 25 ° C.
- the electrical conductivity is controlled within a certain range.
- 4 is a graph showing a Hull cell test result of the hard plating solution of Example 1.
- 4 is a graph showing a Hull cell test result of the hard plating solution of Example 1.
- 4 is a graph showing a Hull cell test result of the hard plating solution of Example 1. It is a graph which shows the electroplating process result of the hard plating solution of Example 2.
- the hard gold plating solution according to the present application contains a gold ion feedstock, a conductive salt, a complexing agent, a metal salt containing an alloying element for gold, and a gold deposition control agent.
- Gold content and gold ion feedstock The hard gold plating solution according to the present application is intended for a gold ion feedstock containing 0.5 g / L to 14 g / L in terms of gold.
- the gold content By setting the gold content in the above range, it is possible to obtain a deposition rate of gold that satisfies industrial productivity, to obtain a high-quality hard gold plating film, and to prevent waste of expensive gold.
- the gold content is less than 0.5 g / L, the deposition rate of gold decreases and the required industrial productivity cannot be satisfied.
- the gold content exceeds 14 g / L, the amount of gold remaining in the hard gold plating solution is increased without being used as the deposited gold, so that the economy is impaired.
- the gold content in terms of gold is more preferably in the range of 5 g / L to 12 g / L.
- a gold salt water-soluble gold salt
- a gold complex that is soluble in water can be used.
- gold gold cyanide potassium gold cyanide, potassium gold sulfite, sodium gold sulfite, a gold (III) ethylenediamine complex, a gold complex having a hydantoin derivative as a ligand, and the like.
- potassium gold cyanide it is preferable to use potassium gold cyanide. This is because it is easily available on the market and the solution stability can be improved.
- the hard gold plating solution according to the present application has a solution specific gravity of 2 ° Be ′ to 16 ° Be ′ at a solution temperature of 25 ° C., and an electric conductivity of 10 mS / cm 2 at a solution temperature of 25 ° C. 70 mS / cm.
- the specific gravity of the solution in the present application is defined using a heavy Baume degree which is a practical unit, not an absolute unit. Since the specific gravity of the hard gold plating solution according to the present application is a heavy liquid having a specific gravity larger than that of water, pure water is set to 0 ° Be ′, 15% saline solution is set to 15 ° Be ′, and 15 mag in this interval. It is shown as the value when divided and scaled.
- solution specific gravity and electric conductivity contain “gold ion feedstock”, “conducting salt”, “complexing agent”, “alloying element for gold” contained in the hard gold plating solution according to the present application. It is determined by the content of each component of “metal salt” and “gold deposition control agent”. In the case of the hard gold plating solution according to the present application, the content of any of the above components may be adjusted so that the values of “solution specific gravity” and “electric conductivity” are within the above range.
- the "solution specific gravity” and “electrical conductivity” can be changed by changing the content of "conductive salt”. Is preferably within the above-mentioned range.
- the specific gravity of the solution is increased and the amount of ions is increased to increase the electrical conductivity.
- the hard gold plating solution according to the present application has a specific gravity of 2 ° Be ′ to 16 ° Be ′ and an electric conductivity of 10 mS / cm to 70 mS / cm, so that a predetermined deposition rate is obtained in a high current density region.
- the deposition rate can be reduced in the low current density region while ensuring the above.
- the solution specific gravity exceeds 16 ° Be ′ or the electric conductivity exceeds 70 mS / cm
- the solution specific gravity is 2 ° Be ′ to 16 ° Be ′ and the electric conductivity is 10 mS / cm to 70 mS.
- the deposition rate decreases in the high current density region, while the deposition rate increases in the low current density region. Therefore, in order to obtain a predetermined film thickness in the high current density region, it is necessary to lengthen the plating process time. However, if the plating time is lengthened, gold deposition further proceeds in the low current density region. Therefore, when the specific gravity of the solution exceeds 16 ° Be ′ or the electrical conductivity exceeds 70 mS / cm, gold deposition occurs not only in the necessary portions but also in unnecessary portions.
- the hard gold plating solution according to the present application has a specific gravity of 5 ° Be ′ to 10 ° Be ′ from the viewpoint of preventing appearance defects and reliably preventing gold deposition on unnecessary portions.
- the electrical conductivity is preferably 28 mS / cm to 50 mS / cm.
- Conductive salt As the conductive salt used in the hard gold plating solution according to the present application, one or more organic acid compounds and inorganic compounds can be used.
- the organic acid compound include compounds having one or more carboxyl groups in one molecule, and specific examples include citric acid, tartaric acid, oxalic acid, lactic acid, and salts thereof.
- inorganic compounds include phosphoric acid, sulfuric acid, boric acid, and salts thereof.
- This conductive salt is preferably contained in the hard gold plating solution at a concentration of 10 g / L to 200 g / L.
- the electrical conductivity may be less than 10 mS / cm.
- the solution stability as a gold plating solution is lowered, and long-term storage becomes difficult.
- the electrical conductivity may exceed 70 mS / cm.
- the conductive salt concentration is more preferably 20 g / L to 100 g / L.
- the complexing agent forms a metal complex with gold or an alloy element described later in the hard gold plating solution, and stabilizes the metal complex in the solution. Used to improve solution stability.
- this complexing agent is mainly used for complex formation of alloy elements. become.
- the complexing agent it is preferable to use one or more selected from formic acid, malic acid, acetic acid, maleic acid, succinic acid, citric acid, glycine, arginine, and salts thereof. These complexing agents can easily form a complex from gold and an alloy element described later.
- complexing agents also function as a buffer material for the hard gold plating solution, the pH can be stabilized.
- the amount of the complexing agent to be added is determined in consideration of the amounts of gold and alloy elements that form a metal complex in the hard gold plating solution.
- the complexing agent concentration is preferably 1.0 g / L to 250 g / L.
- the complexing agent concentration is less than 1.0 g / L, it is difficult to complex gold and alloy elements contained in the hard gold plating solution, and the stability of the solution is impaired, and the hard gold plating solution having a short solution life and Therefore, it is not preferable.
- the complexing agent concentration exceeds 250 g / L, it exceeds the amount used for complexing, and the effect as a buffering agent is saturated.
- Metal salt containing an alloying element for gold includes a metal component that precipitates (eutectoid) in the plating film together with gold. It is a metal salt, and it is preferable to use one or more selected from water-soluble cobalt salts, nickel salts and silver salts. By doing so, it is possible to easily form a hard gold plating film that reliably contains an alloy element, has high hardness and good wear resistance, and can be used as a contact member such as a connector. Specific metal salts are listed below. The metal salts listed here are excellent in water-dissolving performance, have no effect on gold deposition efficiency, and have excellent eutectoid properties with gold.
- Cobalt salts include cobalt sulfate, cobalt chloride, cobalt nitrate, cobalt carbonate, phthalocyanine cobalt, cobalt stearate, ethylenediaminetetraacetic acid disodium cobalt, naphthenate cobalt, borate, cobalt thiocyanate, cobalt sulfamate, cobalt acetate, Cobalt citrate, cobalt hydroxide, cobalt oxalate, cobalt phosphate and the like can be used.
- Nickel salts include nickel sulfate, nickel acetate, nickel chloride, nickel borate, nickel benzoate, nickel oxalate, nickel naphthenate, nickel oxide, nickel phosphate, nickel stearate, nickel tartrate, nickel thiocyanate, amidosulfuric acid Nickel, nickel carbonate, nickel citrate, nickel formate, nickel cyanide, nickel hydroxide, nickel nitrate, nickel octoate and the like can be used.
- silver salt silver chloride, silver hydroxide, silver iodide, silver sulfide, silver phosphate, silver nitrate or the like can be used.
- the hard gold plating solution according to the present application has a total metal salt content of 0.025 g / L regardless of whether the cobalt salt, nickel salt and silver salt are used alone or in combination with a plurality of metal salts. It is preferably ⁇ 5 g / L. If the total metal salt content is less than 0.025 g / L, the amount of eutectoid with respect to the gold plating film is lowered, and a gold plating film having sufficient hardness and wear resistance cannot be obtained.
- the eutectoid amount of the alloy element in the gold plating film becomes excessive, causing an increase in the electrical resistance of the hard gold plating film, and changing the color tone. Since it tends to become remarkable, it is not preferable.
- Gold deposition control agent This gold deposition control agent has an effect of suppressing gold deposition, and lowers gold deposition efficiency in a low current density region. In other words, it is intended to maintain the gold deposition efficiency at the place where gold deposition is necessary (high current density region) and to suppress the gold deposition at the place where gold deposition is unnecessary (low current density region).
- Specific gold deposition control agents include hydrogen peroxide, potassium persulfate, sodium persulfate, ammonium persulfate, potassium iodate, potassium hydrogen iodate, sodium iodate, potassium sulfite, potassium hydrogen sulfite, sodium sulfite, hydrogen sulfite.
- Sodium, ammonium sulfite and ammonium hydrogen sulfite hydrogen peroxide, persulfate, iodate, sulfite and the like can be used. Hydrogen peroxide is more preferable from the viewpoint of the stability of the plating solution.
- the content of the gold deposition control agent in the hard gold plating solution according to the present application is preferably in the range of 0.05 g / L to 50 g / L.
- the content of the gold deposition control agent is less than 0.05 g / L, it is difficult to obtain the effect of reducing the gold deposition efficiency in the low current density region, which is not preferable.
- the content of the gold deposition control agent exceeds 50 g / L, it tends to decrease even the gold deposition efficiency in the high current density region, which is not preferable.
- the hard gold plating solutions 1 to 8 citric acid, potassium citrate and formic acid were first dissolved in pure water, and then cobalt sulfate was added and dissolved. Next, the pH was adjusted to 4.2 using citric acid and potassium hydroxide as a pH adjuster, and potassium gold cyanide was added and dissolved. Finally, hydrogen peroxide was added and dissolved to obtain a hard gold plating solution.
- Table 1 shows the solution specific gravity (solution temperature 25 ° C.) of the obtained hard gold plating solution during the bathing.
- the hard gold plating solution 8 is a comparative solution, and the specific gravity of the solution is outside the range of 2 ° Be ′ to 16 ° Be ′.
- Potassium cyanide potassium 14.5g / L (10g / L as gold) Cobalt sulfate 2.5 g / L (0.5 g / L as cobalt) Citric acid 0g / L ⁇ 90g / L Potassium citrate 0g / L ⁇ 180g / L Formic acid 5g / L Hydrogen peroxide 1.5g / L
- a hard gold plating solution 9 was prepared as a reference solution, and the solution specific gravity was measured in the same manner.
- the hard gold plating solution 9 is a solution in which only 14.5 g / L of potassium gold cyanide and 2.5 g / L of cobalt sulfate (0.5 g / L as cobalt) are dissolved in pure water, and citric acid and formic acid. Does not contain potassium citrate and potassium hydroxide.
- the hull cell test uses a hull cell (registered trademark) tester (Yamamoto plating tester), and a clean copper plate (length 67 mm x width 100 mm x thickness 0.3 mm) with a nickel plating film of 5 ⁇ m as a test piece.
- the total current was 2 A
- the plating time was 1 minute
- the stirring speed was 1000 rpm
- the bath temperature was 50 ° C.
- FIG. 1 is a graph showing the relationship between the distance between the electrodes and the film thickness of the gold plating film formed along with the hull cell test.
- the horizontal axis indicates the distance from the anode to the cathode (clean copper plate), the region where the distance is small corresponds to the high current density region where plating is necessary, and the region where the distance is large is the low current density. This corresponds to a region where plating is unnecessary.
- shaft has shown the film thickness of the obtained gold plating film
- FIG.1 (b) is the graph which expanded partially Fig.1 (a).
- FIG. 2 is a graph showing the relationship between the current density and the film thickness of the gold plating film. The current density depends on the distance from the anode to the cathode (clean copper plate). Moreover, FIG.2 (b) is the graph which expanded partially Fig.2 (a).
- FIG. 3 is a graph showing the relationship between the distance between the electrodes and the relative film thickness with respect to the maximum film thickness.
- the maximum film thickness refers to the film thickness at a location where the distance from the anode to the cathode is 1 cm.
- FIG. 3B is a partially enlarged graph of FIG.
- the hard gold plating solutions 1 to 9 have higher solution specific gravity as the contents of citric acid, sodium citrate and formic acid are increased. In addition, it is clear that the hard gold plating solutions 1 to 9 increase in electrical conductivity and kinematic viscosity as the solution specific gravity increases. From FIG. 1 and FIG. 2, the lower the solution specific gravity, the higher the precipitation rate in the high current density region and the lower the precipitation rate in the low to medium current density region, while the higher the solution specific gravity, It is clear that the gold deposition rate in the high current density region tends to decrease and the gold deposition rate in the low to medium current density region tends to increase.
- the film thickness at a location where the current density is 10 / dm 2 (high current density region) is 1.8 ⁇ m or more.
- the hard gold plating solution 8 (comparative solution) having a solution specific gravity of 18.4 ° Be ′ and exceeding 16 ° Be ′ is used, the film thickness at the location is about 1.5 ⁇ m. .
- the hard gold plating solutions 3, 4, and 6 have a high current density region, that is, a high gold deposition rate in a place where plating is required, and can efficiently deposit gold in the place. it is obvious.
- the hard gold plating solution 8 comparativative solution
- the plating time needs to be longer than 1 minute. When the plating time is lengthened, it is expected that gold deposition further proceeds at a location where the current density is set low and plating is unnecessary.
- the film thickness at a location (low current density region) where the distance from the anode is 9.5 cm and the current density is 0.1 A / dm 2. Is 0.15 ⁇ m or less, when the hard gold plating solution 8 (comparative solution) is used, the film thickness at the above location is 0.2 ⁇ m. From this result, it is clear that the hard gold plating solutions 3, 4 and 6 have a lower current density than the hard gold plating solution 8 (comparative solution), and can further suppress gold deposition to places where plating is unnecessary. It is.
- the current density region is particularly low as compared with the case where the hard gold plating solution 8 (comparative solution) is used.
- the relative film thickness with respect to the maximum film thickness is small.
- the relative film thickness at a location where the distance from the anode is 7 cm and the current density is about 1.3 A / dm 2 (low current density region). Is 7% or less, when the hard gold plating solution 8 (comparative solution) is used, the relative film thickness at the above-mentioned location is 12%.
- the relative film at a location (low current density region) where the distance from the anode is 9.5 cm and the current density is 0.1 A / dm 2. Whereas the thickness is 0.8% or less, when the hard gold plating solution 8 (comparative solution) is used, the relative film thickness at the above location is 1.3%. From these results, the hard gold plating solutions 3, 4 and 6 ensure the film thickness in the places where plating is required and the places where plating is not required compared with the hard gold plating solution 8 (comparative solution). It is clear that gold deposition on the surface can be suppressed.
- hard gold plating solutions 10 and 11 having the following composition were prepared (pH 4.2).
- the specific gravity of the solution was adjusted by changing the concentration of citric acid in the range of 40 g / L to 90 g / L and changing the concentration of potassium citrate in the range of 80 g / L to 180 g / L.
- Table 2 shows the specific gravity of each hard gold plating solution.
- Potassium cyanide potassium 14.5g / L (10g / L as gold) Cobalt sulfate 2.5 g / L (0.5 g / L as cobalt) Citric acid 40g / L ⁇ 90g / L Formic acid 5g / L Potassium citrate 80g / L-180g / L Hydrogen peroxide 2g / L
- an evaluation mask made of silicone rubber having a thickness of 3 mm and a plating mask made of silicone rubber having a thickness of 1 mm were prepared.
- the evaluation mask was formed with a first circular hole having a diameter of 10 mm and a square hole communicating with the circular hole.
- the square hole portion has a length of 20 mm ⁇ a width of 5 mm, the length direction thereof coincides with the radial direction of the first circular hole portion, and communicates with the first circular hole portion at one end portion in the length direction.
- only a second circular hole having a diameter of 10 mm was formed on the plating mask.
- each mask was brought into close contact with the nickel plating film of the test piece in the order of an evaluation mask and a plating mask. At this time, the 1st circular hole part and the 2nd circular hole part were connected.
- the hard gold plating solution was spouted onto the test piece in which the evaluation mask and the plating mask were in close contact with each other by using a pump to form a hard gold plating film on the nickel plating film.
- the obtained hard gold plating film had a keyhole shape composed of a first circular portion and a rectangular portion communicating with the circular portion, depending on the shape of the evaluation mask.
- the plating process was performed at a bath temperature of 50 ° C. and a current density of 50 A / dm 2 .
- the plating treatment time was measured in advance until the gold plating film thickness in the region of the first circular portion reached 0.2 ⁇ m, and was the same as that time.
- the region facing the first circular hole portion of the test piece is a high current density region because there is no plating mask on the nickel plating film and the hard gold plating solution is directly jetted. Since the plating mask is present on the nickel plating film, the region facing the square hole portion of the piece is not directly jetted with the hard gold plating solution, and has a lower current than the region facing the first circular hole portion. It becomes a density region. Therefore, when performing such plating, the area facing the first circular hole portion of the test piece is a place where plating is necessary, and the area facing the square hole portion of the test piece is an unnecessary place for plating, Ideally, the hard gold plating film is not formed in the region facing the square hole.
- the opposite side of the circular portion where the rectangular portion communicates is the tip of the circular portion, and the film thickness is increased every 2 mm from the tip of the circular portion to the end of the rectangular portion. It was measured. The results are shown in FIG. Further, the deposition rate was calculated based on the average film thickness of the entire circular portion, that is, the average film thickness of the region where the distance from the tip of the circular portion is 10 mm or less. The results are shown in Table 2.
- the horizontal axis represents the distance from the tip of the circular portion.
- the region where the horizontal axis is 0 to 10 mm is a place where plating is necessary, and the region where the horizontal axis is 10 mm to 30 mm is a place where plating is not necessary.
- a hard gold plating film is formed in a region where the horizontal axis, which is a place where plating is unnecessary, is 10 mm to 30 mm.
- the hard gold plating solution 10 has a smaller overall film thickness in the region where the horizontal axis is 10 mm to 30 mm, compared with the hard gold plating solution 11.
- the film thickness is approximately 0 ⁇ m in the hard gold plating solution 10 in the region where the horizontal axis exceeds 18 ⁇ m, whereas in the hard gold plating solution 11 the region in which the horizontal axis exceeds 24 ⁇ m.
- the hard gold plating solution 10 having a solution specific gravity of 10.0 ° Be ′ has a solution specific gravity of 18 °.
- the effect of suppressing the gold deposition to the place where plating is unnecessary is excellent.
- the hard gold plating solution 10 has a higher deposition rate than the hard gold plating solution 11 having a higher solution specific gravity. From this, it is clear that the hard gold plating solution 10 can obtain a desired film thickness in a short time in a circular portion that is a place where plating is necessary, as compared with the hard gold plating solution 11. Further, the hard gold plating solution 11 needs to have a longer plating time than the hard gold plating solution 10 in order to obtain a desired film thickness in the circular portion. If the plating time is increased, the plating is unnecessary. The film thickness is further increased in the rectangular portion which is a place. That is, gold deposition on a portion that does not require plating further increases.
- the hard gold plating solution of the present invention it is possible to deposit gold only at a necessary location without causing an appearance defect, and reliably suppress gold deposition at an unnecessary location. For this reason, by applying partial plating to the terminals of electronic components such as connectors using the hard gold plating solution of the present invention, it is possible to suppress the creeping of solder to unnecessary portions during soldering processing. Therefore, it is possible to reduce the waste of expensive gold and suppress an increase in cost.
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Abstract
Description
本発明は、電解用の硬質金めっき溶液に関する。 The present invention relates to a hard gold plating solution for electrolysis.
金めっき皮膜は、金の優れた電気的特性、耐食性等を利用して、コネクタ等の各種電子部品の接続端子の表面処理として、広く利用されてきた。このような用途における硬質金めっきは、良好な耐摩耗性、耐食性、電気伝導性等が要求されるため、金めっき皮膜を構成する結晶の制御が必要になる。そのため、特許文献1に示すように、金めっき皮膜の結晶調整剤としてコバルト塩、ニッケル塩等を金めっき溶液に添加することが行われてきた。
Gold plating films have been widely used as surface treatments for connection terminals of various electronic parts such as connectors, utilizing the excellent electrical properties and corrosion resistance of gold. Since hard gold plating in such applications requires good wear resistance, corrosion resistance, electrical conductivity, etc., it is necessary to control the crystals constituting the gold plating film. Therefore, as shown in
コネクタ等の素材には、一般的に真鍮・リン青銅等の銅合金が使用され、これらに金めっきを施す場合、下地めっきとしてニッケルめっき皮膜を形成し、その上に金めっきを施す。このコネクタ等の電子部品へのめっきでは、電気的な接続を行うためのはんだ処理の際に、不必要な箇所へのはんだの這い上がりを防止するため、部分的なめっき処理が要求される。すなわち、ニッケルめっき皮膜上に硬質金めっきを施す際に、必要な箇所に硬質金めっき皮膜を形成し、不必要な箇所に金めっき皮膜を形成しない、選択めっき性が必要とされる。また、不必要な箇所に金めっきを施さないことにより、省金化及びコストダウンを実現することができる。 Copper materials such as brass and phosphor bronze are generally used as materials for connectors and the like. When gold plating is applied to these, a nickel plating film is formed as a base plating, and gold plating is applied thereon. In plating on electronic components such as connectors, a partial plating process is required in order to prevent the solder from creeping up to unnecessary portions during the soldering process for electrical connection. That is, when hard gold plating is performed on a nickel plating film, selective plating properties are required in which a hard gold plating film is formed at a necessary portion and a gold plating film is not formed at an unnecessary portion. Further, by not performing gold plating on unnecessary portions, money saving and cost reduction can be realized.
一方、特許文献2に開示されているように、金及びコバルトを含む金コバルト合金めっき液において、弱酸性に保持すると共に、ヘキサメチレンテトラミンを添加することにより、コネクタ等の電子部品の必要な箇所のみに選択的に金コバルト合金めっきを形成する技術が提案されてきた。特許文献2によれば、当該技術は、高電流密度領域においては良好なめっき皮膜を形成することができる一方、低電流密度領域においてはめっき析出性が悪いため、結果として不必要な箇所にはめっき析出が起きないことから、めっき析出選択性が優れるとされている。ところが、特許文献2の技術は、実際には不必要な箇所への金析出が生じてしまう上に、用いた有機化合物の消費量の把握が困難でめっき浴管理を迅速に行うことができないという問題があった。
On the other hand, as disclosed in
そこで、本件出願人等は、特許文献3に開示の「可溶性金塩または金錯体、電導塩、錯化剤としてリンゴ酸、酢酸,マレイン酸、コハク酸、クエン酸、グリシン、アルギニン、およびこれら塩類からなる群から選択される一種または二種以上と、コバルト塩、ニッケル塩、銀塩から選択される少なくとも一種の金属塩とを含有する硬質金めっき溶液において、過酸化水素又はヨウ素酸塩を含有することを特徴とする硬質金めっき液。」等を採用することを提唱してきた。
Therefore, the present applicants disclosed “soluble gold salt or gold complex, conductive salt, malic acid, acetic acid, maleic acid, succinic acid, citric acid, glycine, arginine, and salts thereof disclosed in
しかしながら、特許文献3に開示の発明をもって、コネクタ等の電子部品の端子めっきを行っても、上述の不必要な箇所への金析出が生じる現象を完全には抑制できないという不都合があった。
However, with the invention disclosed in
以上のことから、本件発明の課題は、不必要な箇所への金析出を確実に抑制することができる硬質金めっき溶液を提供することを目的とする。 From the above, an object of the present invention is to provide a hard gold plating solution capable of reliably suppressing gold deposition on unnecessary portions.
そこで、本件出願の発明者等の鋭意研究の結果、以下の方法で上記課題の解決が可能であることに想到した。 Therefore, as a result of intensive studies by the inventors of the present application, it was conceived that the above-mentioned problem can be solved by the following method.
本件出願に係る硬質金めっき溶液は、金イオン供給原料、電導塩、錯化剤、金に対する合金元素を含有する金属塩及び金析出制御剤を含有する電解めっき用の硬質金めっき溶液において、当該金イオン供給原料を金換算で0.5g/L~14g/L含有し、溶液温度25℃における溶液比重が2°Be’~16°Be’であり、溶液温度25℃における電気伝導度が10mS/cm~70mS/cmであることを特徴とする。 The hard gold plating solution according to the present application is a hard gold plating solution for electrolytic plating containing a gold ion supply raw material, a conductive salt, a complexing agent, a metal salt containing an alloy element for gold, and a gold deposition control agent. The gold ion feedstock is contained in an amount of 0.5 g / L to 14 g / L in terms of gold, the solution specific gravity at a solution temperature of 25 ° C. is 2 ° Be ′ to 16 ° Be ′, and the electrical conductivity at a solution temperature of 25 ° C. is 10 mS. / Cm to 70 mS / cm.
本件出願に係る硬質金めっき溶液は、前記溶液比重が5°Be’~10°Be’であることが好ましい。 The hard gold plating solution according to the present application preferably has a solution specific gravity of 5 ° Be ′ to 10 ° Be ′.
また、本件出願に係る硬質金めっき溶液は、前記電気伝導度が28mS/cm~50mS/cmであることが好ましい。 In addition, the hard gold plating solution according to the present application preferably has an electric conductivity of 28 mS / cm to 50 mS / cm.
本件出願に係る硬質金めっき溶液において、前記金に対する合金元素を含有する金属塩がコバルト塩、ニッケル塩、銀塩から選択される一種又は二種以上であることが好ましい。 In the hard gold plating solution according to the present application, the metal salt containing the alloying element for gold is preferably one or more selected from a cobalt salt, a nickel salt, and a silver salt.
前記金属塩がコバルト塩である場合には、コバルト換算で0.025g/L~5g/L含有することが好ましい。 When the metal salt is a cobalt salt, it is preferably contained in an amount of 0.025 g / L to 5 g / L in terms of cobalt.
前記金属塩がニッケル塩である場合には、ニッケル換算で0.025g/L~5g/L含有することが好ましい。 When the metal salt is a nickel salt, it is preferably contained in an amount of 0.025 g / L to 5 g / L in terms of nickel.
前記金属塩が銀塩である場合には、銀換算で0.025g/L~60g/L含有することが好ましい。 When the metal salt is a silver salt, it is preferably contained in an amount of 0.025 g / L to 60 g / L in terms of silver.
本件出願に係る硬質金めっき溶液において、前記金析出制御剤が過酸化水素であって0.05g/L~50g/Lの濃度であることが好ましい。 In the hard gold plating solution according to the present application, it is preferable that the gold deposition control agent is hydrogen peroxide and has a concentration of 0.05 g / L to 50 g / L.
本件出願に係る硬質金めっき溶液は、金イオン供給原料、電導塩、錯化剤、金に対する合金元素を含有する金属塩及び金析出制御剤を含有するものであり、溶液温度25℃における溶液比重及び電気伝導度を一定の範囲に制御したものである。このような硬質金めっき溶液を用いることで、必要な箇所のみに硬質金めっき皮膜を形成することができると共に、不必要な箇所への金析出を確実に抑制することができる。従って、この硬質金めっき溶液を用いてコネクタ等の電子部品へめっきを施すことにより、はんだ処理の際、不必要な箇所に半田が這い上がることがないため電気的な特性の低下を抑制することができると共に、高価な金の無駄遣いを減らしてコスト増大を抑制することができる。 The hard gold plating solution according to the present application contains a gold ion supply raw material, a conductive salt, a complexing agent, a metal salt containing an alloy element for gold, and a gold precipitation controlling agent, and a solution specific gravity at a solution temperature of 25 ° C. In addition, the electrical conductivity is controlled within a certain range. By using such a hard gold plating solution, it is possible to form a hard gold plating film only at a necessary location and to reliably suppress gold deposition at an unnecessary location. Therefore, by plating the electronic parts such as connectors using this hard gold plating solution, the solder does not crawl up at unnecessary places during the soldering process, thereby suppressing the deterioration of electrical characteristics. In addition, it is possible to reduce the waste of expensive gold and suppress an increase in cost.
本件出願に係る硬質金めっき溶液は、金イオン供給原料、電導塩、錯化剤、金に対する合金元素を含有する金属塩、及び金析出制御剤を含有するものである。以下、本件出願に係る硬質金めっき溶液の構成成分を分説することで発明内容を説明する。 The hard gold plating solution according to the present application contains a gold ion feedstock, a conductive salt, a complexing agent, a metal salt containing an alloying element for gold, and a gold deposition control agent. Hereinafter, the contents of the invention will be described by explaining the components of the hard gold plating solution according to the present application.
金の含有量と金イオン供給原料: 本件出願に係る硬質金めっき溶液は、金イオン供給原料を、金換算で0.5g/L~14g/L含有するものを対象としている。金含有量を上記範囲とすることにより、工業生産性を満たす金の析出速度を得ることができ、良質な硬質金めっき皮膜を得ることができると共に、高価な金の無駄遣いを防ぐことができる。 Gold content and gold ion feedstock: The hard gold plating solution according to the present application is intended for a gold ion feedstock containing 0.5 g / L to 14 g / L in terms of gold. By setting the gold content in the above range, it is possible to obtain a deposition rate of gold that satisfies industrial productivity, to obtain a high-quality hard gold plating film, and to prevent waste of expensive gold.
金含有量が0.5g/L未満の場合には、金の析出速度が低下し要求される工業生産性を満たすことができない。また、電解めっきの際に所定の電流密度を確保するためには高電圧を印加する必要があり、高電圧を印加すると、得られた硬質金めっき皮膜にヤケや赤み等の外観悪化が生じたり、硬質金めっき皮膜の表面の光沢が失われる傾向がある。一方、金含有量が14g/Lを超える場合には、析出する金として使用されずに硬質金めっき溶液中に残留する金量が増大するため経済性が損なわれる。 If the gold content is less than 0.5 g / L, the deposition rate of gold decreases and the required industrial productivity cannot be satisfied. In addition, it is necessary to apply a high voltage to ensure a predetermined current density during electrolytic plating. If a high voltage is applied, appearance deterioration such as burns and redness may occur in the obtained hard gold plating film. The gloss of the surface of the hard gold plating film tends to be lost. On the other hand, when the gold content exceeds 14 g / L, the amount of gold remaining in the hard gold plating solution is increased without being used as the deposited gold, so that the economy is impaired.
また、本件出願に係る硬質金めっき溶液において、金換算での金含有量を5g/L~12g/Lの範囲とすることがより好ましい。このようにすることにより、要求される工業生産性を十分に満足させることのできる金の析出速度を確実に得ることができ、硬質金めっき溶液として十分な溶液安定性を得ることができると共に、良質な硬質金めっき皮膜を確実に得ることができる。 In the hard gold plating solution according to the present application, the gold content in terms of gold is more preferably in the range of 5 g / L to 12 g / L. By doing this, it is possible to reliably obtain a gold deposition rate that can sufficiently satisfy the required industrial productivity, and to obtain sufficient solution stability as a hard gold plating solution, A high-quality hard gold plating film can be obtained reliably.
本件出願に係る硬質金めっき溶液における金イオン供給原料として、水に対して溶解可能な金塩(水溶性金塩)又は金錯体を用いることができる。例えば、シアン化第一金カリウム、シアン化第二金カリウム、亜硫酸金カリウム、亜硫酸金ナトリウム、金(III)エチレンジアミン錯体、ヒダントイン誘導体を配位子とする金錯体等の使用が可能である。中でも、シアン化第一金カリウムを使用することが好ましい。市場での入手が容易であり、溶液安定性を向上させることができるからである。 As the gold ion supply material in the hard gold plating solution according to the present application, a gold salt (water-soluble gold salt) or a gold complex that is soluble in water can be used. For example, it is possible to use gold gold cyanide, potassium gold cyanide, potassium gold sulfite, sodium gold sulfite, a gold (III) ethylenediamine complex, a gold complex having a hydantoin derivative as a ligand, and the like. Among them, it is preferable to use potassium gold cyanide. This is because it is easily available on the market and the solution stability can be improved.
溶液比重及び電気伝導度: 本件出願に係る硬質金めっき溶液は、溶液温度25℃における溶液比重が2°Be’~16°Be’であり、溶液温度25℃における電気伝導度が10mS/cm~70mS/cmであることを特徴とする。本件出願における溶液比重は、絶対単位ではなく、実用単位である重ボーメ度を用いて規定している。本件出願に係る硬質金めっき溶液の溶液比重は、水より比重が大きい重液であるため、純水を0°Be’とし、15%濃度の食塩水を15°Be’とし、この間を15等分してスケール化したときの値として示している。
Solution specific gravity and electric conductivity: The hard gold plating solution according to the present application has a solution specific gravity of 2 ° Be ′ to 16 ° Be ′ at a solution temperature of 25 ° C., and an electric conductivity of 10 mS /
ここで、溶液比重及び電気伝導度に関する説明を容易にするため、最初に溶液比重及び電気伝導度との相関関係に関して述べる。この「溶液比重」及び「電気伝導度」は、本件出願に係る硬質金めっき溶液が含有する「金イオン供給原料」、「電導塩」、「錯化剤」、「金に対する合金元素を含有する金属塩」及び「金析出制御剤」の各成分の含有量によって定まるものである。本件出願に係る硬質金めっき溶液の場合、上述のいかなる成分の含有量を調整して、「溶液比重」及び「電気伝導度」の値を上述の範囲としても構わない。しかしながら、電解めっき時の通電安定性を確保する観点及び不必要な箇所への金の析出を抑制する観点から、「電導塩」の含有量を変化させることにより「溶液比重」及び「電気伝導度」を上述の範囲とすることが好ましい。硬質金めっき溶液において電導塩の含有量を増やすと、溶液比重が高くなると共にイオン量が増えて電気伝導度が高くなる。 Here, in order to facilitate the explanation of the solution specific gravity and the electric conductivity, the correlation between the solution specific gravity and the electric conductivity will be described first. This "solution specific gravity" and "electrical conductivity" contain "gold ion feedstock", "conducting salt", "complexing agent", "alloying element for gold" contained in the hard gold plating solution according to the present application. It is determined by the content of each component of “metal salt” and “gold deposition control agent”. In the case of the hard gold plating solution according to the present application, the content of any of the above components may be adjusted so that the values of “solution specific gravity” and “electric conductivity” are within the above range. However, from the viewpoint of ensuring current-carrying stability during electroplating and suppressing the deposition of gold in unnecessary parts, the "solution specific gravity" and "electrical conductivity" can be changed by changing the content of "conductive salt". Is preferably within the above-mentioned range. When the content of the conductive salt in the hard gold plating solution is increased, the specific gravity of the solution is increased and the amount of ions is increased to increase the electrical conductivity.
本件出願に係る硬質金めっき溶液は、溶液比重が2°Be’~16°Be’であり且つ電気伝導度が10mS/cm~70mS/cmであることにより、高電流密度領域で所定の析出速度を確保しつつ、低電流密度領域で析出速度を低下させることができる。この結果、高電流密度領域に設定されためっきが必要な箇所において金析出を確実に行うことができると共に、低電流密度領域に設定されためっきが不必要な箇所において金析出を抑制することができる。このため、コネクタ等の電子部品の端子めっきを行う際に、外観不良を生じることなく、必要な箇所にのみ金析出を行うことができ、不必要な箇所への金析出を確実に抑制することができる。 The hard gold plating solution according to the present application has a specific gravity of 2 ° Be ′ to 16 ° Be ′ and an electric conductivity of 10 mS / cm to 70 mS / cm, so that a predetermined deposition rate is obtained in a high current density region. The deposition rate can be reduced in the low current density region while ensuring the above. As a result, it is possible to reliably perform gold deposition in places where plating set in the high current density region is necessary, and to suppress gold deposition in places where plating set in the low current density region is unnecessary. it can. For this reason, when performing terminal plating of electronic components such as connectors, it is possible to deposit gold only in necessary places without causing appearance defects, and reliably suppress gold deposition in unnecessary places. Can do.
溶液比重が2°Be’未満であるか又は電気伝導度が10mS/cm未満である場合には、電解めっきの際に高電流密度領域で所定の電流密度を確保することが困難である。また、高電流密度領域において所定の電流密度を確保するためには電圧を高くする必要があるが、高電圧を印加すると、得られた金めっき皮膜にヤケや赤み等の外観悪化が生じたり、金めっき皮膜の表面の光沢が失われる傾向がある。一方、溶液比重が16°Be’を超えるか又は電気伝導度が70mS/cmを超える場合には、溶液比重が2°Be’~16°Be’であり且つ電気伝導度が10mS/cm~70mS/cmである場合と比較して、高電流密度領域で析出速度が低下する一方、低電流密度領域で析出速度が上昇する。そのため、高電流密度領域で所定の膜厚を得るにはめっき処理時間を長くする必要があるが、めっき時間を長くすると低電流密度領域で金析出がさらに進行してしまう。よって、溶液比重が16°Be’を超えるか又は電気伝導度が70mS/cmを超える場合には、必要な箇所だけでなく不必要な箇所へも金析出が生じてしまう。 When the specific gravity of the solution is less than 2 ° Be ′ or the electrical conductivity is less than 10 mS / cm, it is difficult to ensure a predetermined current density in a high current density region during electrolytic plating. Moreover, in order to ensure a predetermined current density in a high current density region, it is necessary to increase the voltage, but when a high voltage is applied, appearance deterioration such as burns or redness occurs in the obtained gold plating film, There is a tendency for the gloss of the surface of the gold plating film to be lost. On the other hand, when the solution specific gravity exceeds 16 ° Be ′ or the electric conductivity exceeds 70 mS / cm, the solution specific gravity is 2 ° Be ′ to 16 ° Be ′ and the electric conductivity is 10 mS / cm to 70 mS. As compared with the case of / cm, the deposition rate decreases in the high current density region, while the deposition rate increases in the low current density region. Therefore, in order to obtain a predetermined film thickness in the high current density region, it is necessary to lengthen the plating process time. However, if the plating time is lengthened, gold deposition further proceeds in the low current density region. Therefore, when the specific gravity of the solution exceeds 16 ° Be ′ or the electrical conductivity exceeds 70 mS / cm, gold deposition occurs not only in the necessary portions but also in unnecessary portions.
本件出願に係る硬質金めっき溶液は、外観不良を生じず、且つ、不必要な箇所への金析出を確実に防止するという観点から、溶液比重は5°Be’~10°Be’であることが好ましく、電気伝導度は28mS/cm~50mS/cmであることが好ましい。 The hard gold plating solution according to the present application has a specific gravity of 5 ° Be ′ to 10 ° Be ′ from the viewpoint of preventing appearance defects and reliably preventing gold deposition on unnecessary portions. The electrical conductivity is preferably 28 mS / cm to 50 mS / cm.
電導塩: 本件出願に係る硬質金めっき溶液に用いる電導塩として、有機酸化合物や無機化合物を1種又は2種以上用いることができる。有機酸化合物としては、一分子内にカルボキシル基を一つ以上含有する化合物を挙げることができ、具体的には、クエン酸、酒石酸、シュウ酸、乳酸及びこれらの塩を挙げることができる。無機化合物としては、リン酸、硫酸、ホウ酸及びこれらの塩を挙げることができる。これらの電導塩を用いることにより、硬質金めっき溶液としての通電性能を安定化させることができ、且つ、溶液比重及び電気伝導度を容易に調整することができる。 Conductive salt: As the conductive salt used in the hard gold plating solution according to the present application, one or more organic acid compounds and inorganic compounds can be used. Examples of the organic acid compound include compounds having one or more carboxyl groups in one molecule, and specific examples include citric acid, tartaric acid, oxalic acid, lactic acid, and salts thereof. Examples of inorganic compounds include phosphoric acid, sulfuric acid, boric acid, and salts thereof. By using these conductive salts, the current-carrying performance as a hard gold plating solution can be stabilized, and the solution specific gravity and electrical conductivity can be easily adjusted.
この電導塩は、硬質金めっき溶液に10g/L~200g/Lの濃度で含有させることが好ましい。電導塩濃度が10g/L未満の場合には、電気伝導度が10mS/cm未満となることがある。また、金めっき溶液としての溶液安定性が低下して長期保存が困難になる。一方、電導塩濃度が200g/Lを超える場合には、電気伝導度が70mS/cmを上回ることがある。 This conductive salt is preferably contained in the hard gold plating solution at a concentration of 10 g / L to 200 g / L. When the conductive salt concentration is less than 10 g / L, the electrical conductivity may be less than 10 mS / cm. Moreover, the solution stability as a gold plating solution is lowered, and long-term storage becomes difficult. On the other hand, when the conductive salt concentration exceeds 200 g / L, the electrical conductivity may exceed 70 mS / cm.
また、本件出願に係る硬質金めっき溶液において、電導塩濃度は20g/L~100g/Lであることがより好ましい。このようにすることにより、金の析出が求められる領域(高電流密度領域)と、析出の不要な領域(低電流密度領域)との金の析出効率に明確な差を生じさせ、且つ、実操業上必要な金の析出速度を安定して得ることができる。 In the hard gold plating solution according to the present application, the conductive salt concentration is more preferably 20 g / L to 100 g / L. By doing so, a clear difference is caused in the gold deposition efficiency between the region where gold deposition is required (high current density region) and the region where deposition is unnecessary (low current density region), and The gold deposition rate necessary for operation can be obtained stably.
錯化剤: 本件出願に係る硬質金めっき溶液において、錯化剤は当該硬質金めっき溶液中において、金や後述する合金元素と金属錯体を形成し、当該金属錯体を溶液中で安定化させ、溶液安定性を向上させるために用いる。なお、上述のように、本件出願に係る硬質金めっき溶液の金イオン供給原料として、当初より金錯体を用いた場合には、この錯化剤は、主に合金元素の錯体形成に用いられることになる。錯化剤として、ギ酸、リンゴ酸、酢酸、マレイン酸、コハク酸、クエン酸、グリシン、アルギニン及びこれらの塩類から選択される一種又は二種以上を用いることが好ましい。これらの錯化剤は、金及び後述する合金元素から容易に錯体を形成することができる。また、これらの錯化剤は、硬質金めっき溶液の緩衝材としても機能するため、pHを安定化させることができる。この錯化剤は、当該硬質金めっき溶液中で金属錯体を形成する金及び合金元素量を勘案して、添加量が定められる。 Complexing agent: In the hard gold plating solution according to the present application, the complexing agent forms a metal complex with gold or an alloy element described later in the hard gold plating solution, and stabilizes the metal complex in the solution. Used to improve solution stability. In addition, as described above, when a gold complex is used from the beginning as a gold ion supply material of the hard gold plating solution according to the present application, this complexing agent is mainly used for complex formation of alloy elements. become. As the complexing agent, it is preferable to use one or more selected from formic acid, malic acid, acetic acid, maleic acid, succinic acid, citric acid, glycine, arginine, and salts thereof. These complexing agents can easily form a complex from gold and an alloy element described later. Moreover, since these complexing agents also function as a buffer material for the hard gold plating solution, the pH can be stabilized. The amount of the complexing agent to be added is determined in consideration of the amounts of gold and alloy elements that form a metal complex in the hard gold plating solution.
また、本件出願に係る硬質金めっき溶液において、錯化剤濃度は1.0g/L~250g/Lであることが好ましい。錯化剤濃度が1.0g/L未満の場合には、硬質金めっき溶液に含有する金及び合金元素の錯化が困難となり、溶液安定性が損なわれて溶液寿命の短い硬質金めっき溶液となるため好ましくない。一方、錯化剤濃度が250g/Lを超える場合には、錯化に使用される量を超え、緩衝剤としての効果も飽和するため、単なる資源の無駄遣いとなり好ましくない。 In the hard gold plating solution according to the present application, the complexing agent concentration is preferably 1.0 g / L to 250 g / L. When the complexing agent concentration is less than 1.0 g / L, it is difficult to complex gold and alloy elements contained in the hard gold plating solution, and the stability of the solution is impaired, and the hard gold plating solution having a short solution life and Therefore, it is not preferable. On the other hand, when the complexing agent concentration exceeds 250 g / L, it exceeds the amount used for complexing, and the effect as a buffering agent is saturated.
金に対する合金元素を含有する金属塩: 本件出願に係る硬質金めっき溶液において、「金に対する合金元素を含有する金属塩」とは、金と共にめっき皮膜内に析出(共析)する金属成分を含む金属塩のことであり、水溶性のコバルト塩、ニッケル塩及び銀塩から選択される一種又は二種以上を用いることが好ましい。このようにすることにより、合金元素を確実に含み、高硬度で良好な耐摩耗性能を備え、コネクタ等の接点部材として使用可能な硬質金めっき皮膜を容易に形成することができる。以下に、具体的な金属塩を列挙する。ここに列挙した金属塩は、水に対する溶解性能に優れると共に、金の析出効率に影響を与えること無く、且つ、金との共析特性に優れている。 Metal salt containing an alloying element for gold: In the hard gold plating solution according to the present application, “metal salt containing an alloying element for gold” includes a metal component that precipitates (eutectoid) in the plating film together with gold. It is a metal salt, and it is preferable to use one or more selected from water-soluble cobalt salts, nickel salts and silver salts. By doing so, it is possible to easily form a hard gold plating film that reliably contains an alloy element, has high hardness and good wear resistance, and can be used as a contact member such as a connector. Specific metal salts are listed below. The metal salts listed here are excellent in water-dissolving performance, have no effect on gold deposition efficiency, and have excellent eutectoid properties with gold.
コバルト塩としては、硫酸コバルト、塩化コバルト、硝酸コバルト、炭酸コバルト、フタロシアニンコバルト、ステアリン酸コバルト、エチレンジアミン4酢酸二ナトリウムコバルト、ナフテン酸コバルト、ホウ酸コバルト、チオシアン酸コバルト、スルファミン酸コバルト、酢酸コバルト、クエン酸コバルト、水酸化コバルト、シュウ酸コバルト、リン酸コバルト等を用いることができる。 Cobalt salts include cobalt sulfate, cobalt chloride, cobalt nitrate, cobalt carbonate, phthalocyanine cobalt, cobalt stearate, ethylenediaminetetraacetic acid disodium cobalt, naphthenate cobalt, borate, cobalt thiocyanate, cobalt sulfamate, cobalt acetate, Cobalt citrate, cobalt hydroxide, cobalt oxalate, cobalt phosphate and the like can be used.
ニッケル塩としては、硫酸ニッケル、酢酸ニッケル、塩化ニッケル、ホウ酸ニッケル、安息香酸ニッケル、シュウ酸ニッケル、ナフテン酸ニッケル、酸化ニッケル、リン酸ニッケル、ステアリン酸ニッケル、酒石酸ニッケル、チオシアン酸ニッケル、アミド硫酸ニッケル、炭酸ニッケル、クエン酸ニッケル、ギ酸ニッケル、シアン化ニッケル、水酸化ニッケル、硝酸ニッケル、オクタン酸ニッケル等を用いることができる。 Nickel salts include nickel sulfate, nickel acetate, nickel chloride, nickel borate, nickel benzoate, nickel oxalate, nickel naphthenate, nickel oxide, nickel phosphate, nickel stearate, nickel tartrate, nickel thiocyanate, amidosulfuric acid Nickel, nickel carbonate, nickel citrate, nickel formate, nickel cyanide, nickel hydroxide, nickel nitrate, nickel octoate and the like can be used.
銀塩としては、塩化銀、水酸化銀、ヨウ化銀、硫化銀、リン酸銀、硝酸銀等を用いることができる。 As the silver salt, silver chloride, silver hydroxide, silver iodide, silver sulfide, silver phosphate, silver nitrate or the like can be used.
本件出願に係る硬質金めっき溶液は、コバルト塩、ニッケル塩及び銀塩を単独で用いる場合又は複数の金属塩を組み合わせて用いる場合のいずれにおいても、金属塩全体の含有量が0.025g/L~5g/Lであることが好ましい。金属塩全体の含有量が0.025g/L未満であると、金めっき皮膜に対する共析量が低下して、十分な硬度と耐摩耗性能を備える金めっき皮膜が得られなくなるため好ましくない。一方、金属塩全体の含有量が5g/Lを上回ると、金めっき皮膜中への合金元素の共析量が過剰になり、硬質金めっき皮膜の電気抵抗の上昇を引き起こしたり、色調の変化が顕著になる傾向があるため好ましくない。 The hard gold plating solution according to the present application has a total metal salt content of 0.025 g / L regardless of whether the cobalt salt, nickel salt and silver salt are used alone or in combination with a plurality of metal salts. It is preferably ˜5 g / L. If the total metal salt content is less than 0.025 g / L, the amount of eutectoid with respect to the gold plating film is lowered, and a gold plating film having sufficient hardness and wear resistance cannot be obtained. On the other hand, if the total content of the metal salt exceeds 5 g / L, the eutectoid amount of the alloy element in the gold plating film becomes excessive, causing an increase in the electrical resistance of the hard gold plating film, and changing the color tone. Since it tends to become remarkable, it is not preferable.
金析出制御剤: この金析出制御剤は、金析出を抑制する効果を有し、低電流密度領域で金の析出効率を低下させるものである。即ち、金析出が必要な箇所(高電流密度領域)での金の析出効率を維持すると共に、金析出が不必要な箇所(低電流密度領域)での金析出を抑制するためのものである。具体的な金析出制御剤としては、過酸化水素、過硫酸カリウム、過硫酸ナトリウム、過硫酸アンモニウム、ヨウ素酸カリウム、ヨウ素酸水素カリウム、ヨウ素酸ナトリウム、亜硫酸カリウム、亜硫酸水素カリウム、亜硫酸ナトリウム、亜硫酸水素ナトリウム、亜硫酸アンモニウムおよび亜硫酸水素アンモニウム過酸化水素、過硫酸塩、ヨウ素酸塩、亜硫酸塩等を用いることができる。めっき液の安定性の観点から過酸化水素がより好ましい。 Gold deposition control agent: This gold deposition control agent has an effect of suppressing gold deposition, and lowers gold deposition efficiency in a low current density region. In other words, it is intended to maintain the gold deposition efficiency at the place where gold deposition is necessary (high current density region) and to suppress the gold deposition at the place where gold deposition is unnecessary (low current density region). . Specific gold deposition control agents include hydrogen peroxide, potassium persulfate, sodium persulfate, ammonium persulfate, potassium iodate, potassium hydrogen iodate, sodium iodate, potassium sulfite, potassium hydrogen sulfite, sodium sulfite, hydrogen sulfite. Sodium, ammonium sulfite and ammonium hydrogen sulfite hydrogen peroxide, persulfate, iodate, sulfite and the like can be used. Hydrogen peroxide is more preferable from the viewpoint of the stability of the plating solution.
本件出願に係る硬質金めっき溶液における金析出制御剤の含有量は、0.05g/L~50g/Lの範囲が好ましい。当該金析出制御剤の含有量が0.05g/L未満になると、低電流密度領域で金の析出効率を低下させる効果が得られにくくなるため好ましくない。一方、当該金析出制御剤の含有量が50g/Lを超えると、高電流密度領域における金の析出効率までも低下させる傾向が出るために好ましくない。 The content of the gold deposition control agent in the hard gold plating solution according to the present application is preferably in the range of 0.05 g / L to 50 g / L. When the content of the gold deposition control agent is less than 0.05 g / L, it is difficult to obtain the effect of reducing the gold deposition efficiency in the low current density region, which is not preferable. On the other hand, when the content of the gold deposition control agent exceeds 50 g / L, it tends to decrease even the gold deposition efficiency in the high current density region, which is not preferable.
以下では実施例を挙げて、本件発明をより具体的に説明するが、下記実施例に本件発明が限定されるものではないのは勿論である。 Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited to the following examples.
1.溶液比重及び電気伝導度に関する評価
まず、下記配合の硬質金めっき溶液1~8を調製した(pH4.2)。クエン酸は、錯化剤、電導塩及び緩衝剤として作用し、ギ酸は錯化剤、電導塩及び緩衝剤として作用し、クエン酸カリウムは電導塩として作用し、過酸化水素は金析出制御剤として作用する。クエン酸の濃度を0g/L~90g/Lの範囲で変化させ、クエン酸カリウムの濃度を0g/L~180g/Lの範囲で変化させることにより、溶液比重を調整した。
1. Evaluation on Solution Specific Gravity and Electrical Conductivity First, hard
具体的には、硬質金めっき溶液1~8については、まず、クエン酸、クエン酸カリウム及びギ酸を純水に溶解させ、次いで硫酸コバルトを添加し溶解した。次に、クエン酸及びpH調整剤としての水酸化カリウムを用いてpHを4.2に調整し、シアン化第一金カリウムを添加して溶解した。最後に過酸化水素を添加して溶解し、硬質金めっき溶液を得た。得られた硬質金めっき溶液の建浴時の溶液比重(溶液温度25℃)を表1に示す。なお、硬質金めっき溶液8は、比較用溶液であり、溶液比重が2°Be’~16°Be’の範囲外となっている。
シアン化第一金カリウム 14.5g/L(金として10g/L)
硫酸コバルト 2.5g/L(コバルトとして0.5g/L)
クエン酸 0g/L~90g/L
クエン酸カリウム 0g/L~180g/L
ギ酸 5g/L
過酸化水素 1.5g/L
Specifically, for the hard
Potassium cyanide potassium 14.5g / L (10g / L as gold)
Cobalt sulfate 2.5 g / L (0.5 g / L as cobalt)
Citric acid 0g / L ~ 90g / L
Potassium citrate 0g / L ~ 180g / L
Formic acid 5g / L
Hydrogen peroxide 1.5g / L
また、参考用溶液として硬質金めっき溶液9を調製し、同様に溶液比重を測定した。硬質金めっき溶液9は、シアン化第一金カリウム14.5g/L及び硫酸コバルト2.5g/L(コバルトとして0.5g/L)のみを純水に溶解したものであり、クエン酸、ギ酸、クエン酸カリウム及び水酸化カリウムは含まない。
Also, a hard
次に、得られた硬質金めっき溶液1~9について、浴温度25℃において電気伝導度及び動粘度を測定した。結果を表1に示す。
Next, the electrical conductivity and kinematic viscosity of the obtained hard
次に、上記硬質金めっき溶液3,4,6,8についてハルセル試験を行った。ハルセル試験は、ハルセル(登録商標)試験器(株式会社山本鍍金試験器)を用い、清浄銅板(縦67mm×横100mm×厚さ0.3mm)にニッケルめっき皮膜5μmを施したものを試験片として使用し、全電流2A、めっき時間1分間、撹拌速度1000rpm、浴温度50℃の条件で行った。結果を図1~図3に示す。
Next, a Hull cell test was performed on the hard
図1は、電極間の距離とハルセル試験に伴って形成された金めっき皮膜の膜厚との関係を示すグラフである。図1において、横軸は、陽極から陰極(清浄銅板)までの距離を示し、距離が小さい領域は高電流密度領域であってめっきが必要な箇所に相当し、距離が大きい領域は低電流密度領域であってめっきが不必要な箇所に相当する。また、縦軸は、得られた金めっき皮膜の膜厚を示しているが、実質的に析出速度を意味している。また、図1(b)は、図1(a)を部分的に拡大したグラフである。 FIG. 1 is a graph showing the relationship between the distance between the electrodes and the film thickness of the gold plating film formed along with the hull cell test. In FIG. 1, the horizontal axis indicates the distance from the anode to the cathode (clean copper plate), the region where the distance is small corresponds to the high current density region where plating is necessary, and the region where the distance is large is the low current density. This corresponds to a region where plating is unnecessary. Moreover, although the vertical axis | shaft has shown the film thickness of the obtained gold plating film | membrane, it has meant the deposition rate substantially. Moreover, FIG.1 (b) is the graph which expanded partially Fig.1 (a).
図2は、電流密度と金めっき皮膜の膜厚との関係を示すグラフである。電流密度は、陽極から陰極(清浄銅板)までの距離に依存する。また、図2(b)は、図2(a)を部分的に拡大したグラフである。 FIG. 2 is a graph showing the relationship between the current density and the film thickness of the gold plating film. The current density depends on the distance from the anode to the cathode (clean copper plate). Moreover, FIG.2 (b) is the graph which expanded partially Fig.2 (a).
図3は、電極間の距離と最大膜厚に対する相対膜厚との関係を示すグラフである。ここで、最大膜厚とは、陽極から陰極までの距離が1cmである箇所の膜厚をいう。また、図3(b)は、図3(a)を部分的に拡大したグラフである。 FIG. 3 is a graph showing the relationship between the distance between the electrodes and the relative film thickness with respect to the maximum film thickness. Here, the maximum film thickness refers to the film thickness at a location where the distance from the anode to the cathode is 1 cm. FIG. 3B is a partially enlarged graph of FIG.
表1から、硬質金めっき溶液1~9は、クエン酸、クエン酸ナトリウム及びギ酸の含有量が多いほど、溶液比重が高いことが明らかである。また、硬質金めっき溶液1~9は、溶液比重が高いほど電気伝導度が増加し、動粘度も増加することが明らかである。また、図1及び図2から、溶液比重が低いほど、高電流密度領域の析出速度が増加し、低~中電流密度領域における析出速度が低下する傾向があり、一方、溶液比重が高いほど、高電流密度領域における金の析出速度が低下し、低~中電流密度領域における金の析出速度が増加する傾向があることが明らかである。
From Table 1, it is clear that the hard
また、図1及び図2に示されるように、溶液比重が2~16°Be’の範囲である硬質金めっき溶液3,4,6を用いた場合には、陽極からの距離が1cmであって電流密度が10/dm2である箇所(高電流密度領域)における膜厚が1.8μm以上である。一方、溶液比重が18.4°Be’であって16°Be’を上回る上記硬質金めっき溶液8(比較用溶液)を用いた場合には、上記箇所における膜厚が約1.5μmである。この結果から、硬質金めっき溶液3,4,6は、高電流密度領域、すなわち、めっきを必要とする箇所における金の析出速度が速く、当該箇所への金析出を効率良く行うことができることが明らかである。また、硬質金めっき溶液8(比較用溶液)は、高電流密度領域における金の析出速度が遅いことから、陽極からの距離が1cmである箇所の膜厚を1.8μm以上とするには、めっき時間を1分間よりもさらに長くする必要がある。めっき時間を長くした場合には、電流密度が低く設定されめっき不要である箇所への金析出が更に進行することが予想される。
As shown in FIGS. 1 and 2, when the hard
また、硬質金めっき溶液3,4,6を用いた場合には、陽極からの距離が9.5cmであって電流密度が0.1A/dm2である箇所(低電流密度領域)における膜厚が0.15μm以下であるのに対し、硬質金めっき溶液8(比較用溶液)を用いた場合には、上記箇所における膜厚が0.2μmである。この結果から、硬質金めっき溶液3,4,6は、硬質金めっき溶液8(比較用溶液)と比較して、電流密度が低く設定されめっき不要な箇所への金析出をより抑制できることが明らかである。
Further, when the hard
また、図3に示されるように、硬質金めっき溶液3,4,6を用いた場合には、硬質金めっき溶液8(比較用溶液)を用いた場合と比較して、特に低電流密度領域において、最大膜厚(高電流密度領域)に対する相対膜厚が小さい。例えば、硬質金めっき溶液3,4,6を用いた場合には、陽極からの距離が7cmであって電流密度が約1.3A/dm2である箇所(低電流密度領域)における相対膜厚が7%以下であるのに対し、硬質金めっき溶液8(比較用溶液)を用いた場合には上記箇所における相対膜厚が12%である。また、硬質金めっき溶液3,4,6を用いた場合には、陽極からの距離が9.5cmであって電流密度が0.1A/dm2である箇所(低電流密度領域)における相対膜厚が0.8%以下であるのに対し、硬質金めっき溶液8(比較用溶液)を用いた場合には上記箇所における相対膜厚が1.3%である。この結果から、硬質金めっき溶液3,4,6は、硬質金めっき溶液8(比較用溶液)と比較して、めっきを必要とする箇所において膜厚を確保しつつ、めっきを必要としない箇所への金析出を抑制できることが明らかである。
Further, as shown in FIG. 3, when the hard
2.析出選択性に関する評価
まず、下記配合の硬質金めっき溶液10,11を調製した(pH4.2)。クエン酸の濃度を40g/L~90g/Lの範囲で変化させ、クエン酸カリウムの濃度を80g/L~180g/Lの範囲で変化させることにより、溶液比重を調整した。各硬質金めっき溶液の溶液比重を表2に示す。
シアン化第一金カリウム 14.5g/L(金として10g/L)
硫酸コバルト 2.5g/L(コバルトとして0.5g/L)
クエン酸 40g/L~90g/L
ギ酸 5g/L
クエン酸カリウム 80g/L~180g/L
過酸化水素 2g/L
2. Evaluation on Precipitation Selectivity First, hard
Potassium cyanide potassium 14.5g / L (10g / L as gold)
Cobalt sulfate 2.5 g / L (0.5 g / L as cobalt)
Citric acid 40g / L ~ 90g / L
Formic acid 5g / L
Potassium citrate 80g / L-180g / L
Hydrogen peroxide 2g / L
次に、清浄銅板にニッケルめっき皮膜5μmを施したものを試験片として使用し、上記硬質金めっき溶液を用いて部分めっきを施す際に、不必要な箇所への金析出がどの程度生じるかを調べた。 Next, how much gold deposition occurs in unnecessary parts when using a clean copper plate with a nickel plating film of 5 μm as a test piece and performing partial plating using the above hard gold plating solution. Examined.
まず、厚さ3mmのシリコーンゴムからなる評価用マスクと、厚さ1mmのシリコーンゴムからなるめっき用マスクを用意した。評価用マスクには直径10mmの第1円孔部及び当該円孔部に連通する角孔部を形成した。角孔部は、長さ20mm×幅5mmであり、その長さ方向が第1円孔部の径方向に一致し、長さ方向の一端部において第1円孔部に連通している。また、めっき用マスクには直径10mmの第2円孔部のみを形成した。続いて、試験片のニッケルめっき皮膜上に、評価用マスク、めっき用マスクの順で各マスクを密着させた。このとき、第1円孔部と第2円孔部とを連通させた。 First, an evaluation mask made of silicone rubber having a thickness of 3 mm and a plating mask made of silicone rubber having a thickness of 1 mm were prepared. The evaluation mask was formed with a first circular hole having a diameter of 10 mm and a square hole communicating with the circular hole. The square hole portion has a length of 20 mm × a width of 5 mm, the length direction thereof coincides with the radial direction of the first circular hole portion, and communicates with the first circular hole portion at one end portion in the length direction. Further, only a second circular hole having a diameter of 10 mm was formed on the plating mask. Subsequently, each mask was brought into close contact with the nickel plating film of the test piece in the order of an evaluation mask and a plating mask. At this time, the 1st circular hole part and the 2nd circular hole part were connected.
次に、評価用マスク及びめっき用マスクが密着した試験片に上記硬質金めっき溶液をポンプを用いて噴流することによって、めっき処理を施し、ニッケルめっき皮膜上に硬質金めっき皮膜を形成した。得られた硬質金めっき皮膜は、評価用マスクの形状により、第1円形部と円形部に連通する矩形部とからなる鍵穴形状であった。めっき処理は、浴温度を50℃とし、電流密度を50A/dm2として行った。めっき処理の時間は、予め、第1円形部の領域の金めっき膜厚が0.2μmに達するまでの時間を測定し、その時間と同一の時間行った。めっき処理の際、試験片の第1円孔部に臨む領域は、ニッケルめっき皮膜上にめっき用マスクがなく、硬質金めっき溶液が直接噴流されることから、高電流密度領域となる一方、試験片の角孔部に臨む領域は、ニッケルめっき皮膜上にめっき用マスクが存在するため、硬質金めっき溶液が直接噴流されることがなく、第1円孔部に臨む領域と比較して低電流密度領域となる。よって、このようなめっきを施す場合には、試験片の第1円孔部に臨む領域がめっきの必要な箇所であり、試験片の角孔部に臨む領域がめっきの不必要な箇所となり、角孔部に臨む領域に硬質金めっき皮膜が形成されないことが理想的である。 Next, the hard gold plating solution was spouted onto the test piece in which the evaluation mask and the plating mask were in close contact with each other by using a pump to form a hard gold plating film on the nickel plating film. The obtained hard gold plating film had a keyhole shape composed of a first circular portion and a rectangular portion communicating with the circular portion, depending on the shape of the evaluation mask. The plating process was performed at a bath temperature of 50 ° C. and a current density of 50 A / dm 2 . The plating treatment time was measured in advance until the gold plating film thickness in the region of the first circular portion reached 0.2 μm, and was the same as that time. During the plating process, the region facing the first circular hole portion of the test piece is a high current density region because there is no plating mask on the nickel plating film and the hard gold plating solution is directly jetted. Since the plating mask is present on the nickel plating film, the region facing the square hole portion of the piece is not directly jetted with the hard gold plating solution, and has a lower current than the region facing the first circular hole portion. It becomes a density region. Therefore, when performing such plating, the area facing the first circular hole portion of the test piece is a place where plating is necessary, and the area facing the square hole portion of the test piece is an unnecessary place for plating, Ideally, the hard gold plating film is not formed in the region facing the square hole.
次に、得られた鍵穴形状の硬質金めっき皮膜について、円形部において矩形部が連通する位置の反対側を円形部の先端とし、円形部の先端から矩形部の末端まで2mm毎に膜厚を測定した。図4に結果を示す。また、円形部の全体の平均膜厚、すなわち、円形部の先端からの距離が10mm以下である領域の平均膜厚を基に析出速度を算出した。結果を表2に示す。 Next, with respect to the obtained keyhole-shaped hard gold plating film, the opposite side of the circular portion where the rectangular portion communicates is the tip of the circular portion, and the film thickness is increased every 2 mm from the tip of the circular portion to the end of the rectangular portion. It was measured. The results are shown in FIG. Further, the deposition rate was calculated based on the average film thickness of the entire circular portion, that is, the average film thickness of the region where the distance from the tip of the circular portion is 10 mm or less. The results are shown in Table 2.
図4において、横軸は、円形部の先端からの距離を表している。横軸が0~10mmの領域はめっきを必要とする箇所であり、横軸が10mm~30mmの領域はめっき不要の箇所である。 In FIG. 4, the horizontal axis represents the distance from the tip of the circular portion. The region where the horizontal axis is 0 to 10 mm is a place where plating is necessary, and the region where the horizontal axis is 10 mm to 30 mm is a place where plating is not necessary.
図4に示すように、硬質金めっき溶液10,11共に、めっき不要の箇所である横軸が10mm~30mmの領域において、硬質金めっき皮膜が形成されている。しかしながら、硬質金めっき溶液10は、硬質金めっき溶液11と比較して、横軸が10mm~30mmの領域における膜厚が全体的に小さい。特に、膜厚が略0μmとなるのが、硬質金めっき溶液10では横軸が18μm超の領域であるのに対し、硬質金めっき溶液11では横軸が24μm超の領域である。このことから、溶液比重が10.0°Be’である硬質金めっき溶液10は、溶液比重が18°.4Be’である硬質金めっき溶液11と比較して、めっき不要な箇所への金析出の抑制効果に優れることが明らかである。
As shown in FIG. 4, in both the hard
また、表2に示すように、硬質金めっき溶液10は、溶液比重がより大きい硬質金めっき溶液11と比較して、析出速度が大きいことが明らかである。このことから、硬質金めっき溶液10は、硬質金めっき溶液11と比較して、めっきが必要な箇所である円形部において、短時間で所望の膜厚を得ることができることが明らかである。また、硬質金めっき溶液11は、円形部において所望の膜厚を得るためには硬質金めっき溶液10よりもめっき時間を長くする必要があり、めっき時間を長くした場合には、めっき不必要な箇所である矩形部において膜厚がさらに増大する。すなわち、めっき不要な箇所への金析出がさらに増大してしまう。
Further, as shown in Table 2, it is clear that the hard
以上説明したとおり、本件発明の硬質金めっき溶液によれば、外観不良を生じることなく、必要な箇所にのみ金析出を行い、不必要な箇所への金析出を確実に抑制することができる。このため、本件発明の硬質金めっき溶液を用いてコネクタ等の電子部品の端子に部分めっきを施すことにより、はんだ処理の際、不必要な箇所へのはんだの這い上がりを抑制することができると共に、高価な金の無駄遣いを減らしてコスト増大を抑制することができる。
As described above, according to the hard gold plating solution of the present invention, it is possible to deposit gold only at a necessary location without causing an appearance defect, and reliably suppress gold deposition at an unnecessary location. For this reason, by applying partial plating to the terminals of electronic components such as connectors using the hard gold plating solution of the present invention, it is possible to suppress the creeping of solder to unnecessary portions during soldering processing. Therefore, it is possible to reduce the waste of expensive gold and suppress an increase in cost.
Claims (8)
当該金イオン供給原料を金換算で0.5g/L~14g/L含有し、溶液温度25℃における溶液比重が2°Be’~16°Be’であり、溶液温度25℃における電気伝導度が10mS/cm~70mS/cmであることを特徴とする硬質金めっき溶液。 In a hard gold plating solution for electrolytic plating containing a gold ion feedstock, a conductive salt, a complexing agent, a metal salt containing an alloy element for gold, and a gold deposition control agent,
The gold ion feedstock contains 0.5 g / L to 14 g / L in terms of gold, the solution specific gravity at a solution temperature of 25 ° C. is 2 ° Be ′ to 16 ° Be ′, and the electric conductivity at a solution temperature of 25 ° C. A hard gold plating solution characterized by being 10 mS / cm to 70 mS / cm.
The hard gold plating solution according to any one of claims 1 to 7, wherein the gold deposition control agent is hydrogen peroxide and has a concentration of 0.05 g / L to 50 g / L.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58110687A (en) * | 1981-12-14 | 1983-07-01 | アメリカン・ケミカル・アンド・リフアイニング・コンパニ−・インコ−ポレ−テツド | Gold plating bath and method using maleic acid anhydride polymer chelate |
| US4795534A (en) * | 1986-09-25 | 1989-01-03 | Vanguard Research Associates, Inc. | Electrolyte solution and process for gold electroplating |
| JP2009263776A (en) * | 2008-03-31 | 2009-11-12 | Ne Chemcat Corp | Gold-containing plating solution for partial plating |
| JP5025815B1 (en) * | 2011-08-10 | 2012-09-12 | 小島化学薬品株式会社 | Hard gold plating solution |
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| JP5513784B2 (en) * | 2008-08-25 | 2014-06-04 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | Hard gold plating solution |
-
2016
- 2016-04-07 JP JP2016077335A patent/JP2017186627A/en active Pending
- 2016-12-22 WO PCT/JP2016/088430 patent/WO2017175428A1/en not_active Ceased
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58110687A (en) * | 1981-12-14 | 1983-07-01 | アメリカン・ケミカル・アンド・リフアイニング・コンパニ−・インコ−ポレ−テツド | Gold plating bath and method using maleic acid anhydride polymer chelate |
| US4795534A (en) * | 1986-09-25 | 1989-01-03 | Vanguard Research Associates, Inc. | Electrolyte solution and process for gold electroplating |
| JP2009263776A (en) * | 2008-03-31 | 2009-11-12 | Ne Chemcat Corp | Gold-containing plating solution for partial plating |
| JP5025815B1 (en) * | 2011-08-10 | 2012-09-12 | 小島化学薬品株式会社 | Hard gold plating solution |
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