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WO2017164523A1 - Réseau de métamatériau actif et son procédé de fabrication - Google Patents

Réseau de métamatériau actif et son procédé de fabrication Download PDF

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Publication number
WO2017164523A1
WO2017164523A1 PCT/KR2017/001929 KR2017001929W WO2017164523A1 WO 2017164523 A1 WO2017164523 A1 WO 2017164523A1 KR 2017001929 W KR2017001929 W KR 2017001929W WO 2017164523 A1 WO2017164523 A1 WO 2017164523A1
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WO
WIPO (PCT)
Prior art keywords
material layer
metamaterial
conductivity
gate electrode
electrolyte material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2017/001929
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English (en)
Korean (ko)
Inventor
이호진
강문성
정현승
허은아
조보은
구재목
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soongsil University
Original Assignee
Soongsil University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160132263A external-priority patent/KR101785508B1/ko
Application filed by Soongsil University filed Critical Soongsil University
Priority to US16/087,701 priority Critical patent/US11520206B2/en
Publication of WO2017164523A1 publication Critical patent/WO2017164523A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/08—Strip line resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C7/00—Modulating electromagnetic waves
    • H03C7/02—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators

Definitions

  • the present invention relates to an active metamaterial array and a method of manufacturing the same.
  • Active metamaterial technology uses visible light (VL), infrared (IR), infrared (IR), ultraviolet (UV) rays and terahertz waves through the structure, conductivity, and arrangement of metaatoms that make up metamaterials.
  • VL visible light
  • IR infrared
  • IR infrared
  • UV ultraviolet
  • terahertz Wave is a technology that selectively tunes, particularly as an important research area for implementing terahertz systems.
  • Metamaterial arrays for actively varying the terahertz wave adjustment have been implemented using electrical, optical, mechanical and thermal variables.
  • a method for switching terahertz waves by changing the conductivity of the entire metamaterial array or a portion of the metaatoms through external stimuli has been studied.
  • FIG. 1A and 1B schematically illustrate a conventional metamaterial array.
  • a technique of controlling the change of the metamaterial structure 101 as a whole may be performed by coating a material capable of changing conductivity on the substrate 102 including the metamaterial structure 101.
  • the conductivity is changed through the external magnetic pole 103, and thus the resonance of the metamaterial is switched.
  • This method can switch the resonance of the metamaterial itself and does not require an additional pattern, but has the disadvantage that it is impossible to vary the resonance frequency to have a desired frequency or phase.
  • the technique of controlling the change of the entire metamaterial structure 101 by adding the semiconductor layer 105 to the metamaterial structure 101 may vary the resonance frequency through an external stimulus.
  • the variable range is limited because the range is defined within the structure of the metamaterial structure.
  • there is a difficulty in the electrical wiring for the variable of the individual metamaterial structure and thus there is a limit in the variable method.
  • the prior art Korea Patent Publication No. 2016-0013423 (name of the invention: high-efficiency terahertz transceiver capable of frequency modulation) is capable of frequency modulation capable of modulating the frequency to increase the generation output and measurement sensitivity of the terahertz wave
  • a high efficiency terahertz transceiver is disclosed.
  • the present invention to solve the above problems, to provide a meta-material array for changing the conductivity of the material layer that can vary the conductivity connecting between the meta-material structure to connect or separate a plurality of meta-material structure integrally. There is this.
  • an active metamaterial array is a substrate; A plurality of metamaterial structures disposed on the substrate and spaced apart from each other; A conductivity varying material layer formed between the plurality of metamaterial structures to selectively connect the metamaterial structures; An electrolyte material layer required for conductivity control of the conductivity varying material; And a gate electrode disposed at one end of the substrate and in contact with the electrolyte, wherein the gate electrode controls the movement of ions included in the electrolyte material layer when an external voltage is applied to the gate electrode to thereby control the conductivity of the layer of variable conductivity material.
  • the method of manufacturing an active metamaterial array comprises the steps of forming a plurality of metamaterial structures to be spaced apart from each other on a substrate; Forming a layer of semiconductor or conductivity varying material to selectively connect metamaterial structures between the plurality of metamaterial structures; Forming an electrolyte material layer on the metamaterial structure and the conductivity varying material layer; And forming a gate electrode disposed at one end of the substrate to contact a region of the electrolyte material layer.
  • terahertz waves In addition, the overall control range of terahertz waves is limited, and it overcomes the existing metamaterial design technology, which is fundamentally difficult to precisely modulate the phase and frequency, and secures not only wider terahertz frequency variable width but also higher phase shift width. There is an effect that can be arbitrarily adjusted to the traveling direction of the terahertz wave. In addition to the terahertz band as well as visible light, infrared and ultraviolet bands can be extended to apply.
  • FIG. 1A and 1B schematically illustrate a conventional metamaterial array.
  • FIG. 2 is a cross-sectional view illustrating a configuration of a metaatom array according to an embodiment of the present invention.
  • 3A is a view for explaining a method of controlling a metamaterial structure through an electrolyte material layer integrally formed with a size corresponding to the size of the entire metamaterial structure according to one embodiment of the present invention.
  • 3B is a view illustrating a frequency varying result according to a change in conductivity of a layer of a conductive variable material including a semiconductor and graphene according to an exemplary embodiment of the present invention.
  • 3C is a view illustrating a phase shift result according to a change in conductivity of a layer of a conductive variable material including graphene and a semiconductor according to an embodiment of the present invention
  • 4A is a diagram for describing a method of controlling a metamaterial structure through a plurality of units of electrolyte material layers arranged in a matrix structure according to an embodiment of the present invention.
  • 4B is a diagram illustrating multiple frequencies according to modulation of an external voltage connected to the plurality of units of the electrolyte material layer of FIG. 4A.
  • 4C is a diagram illustrating a phase change in phase according to modulation of an external voltage connected to a plurality of units of an electrolyte material layer of FIG. 4A.
  • FIG. 5 is a conceptual diagram illustrating that the metamaterial structure is connected to one metamaterial molecular structure according to an embodiment of the present invention.
  • FIG. 6 is a flowchart illustrating a method of manufacturing an active metamaterial array according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view illustrating a configuration of a metaatom array according to an embodiment of the present invention.
  • the active metamaterial array of the present invention includes a substrate 200, a metamaterial structure 201, a layer of variable conductivity material 202, an electrolyte material layer 203, and a gate electrode 204.
  • the metamaterial structures 201 are spaced apart from each other, and the conductivity variable material layer 202 may be formed between the metamaterial structures 201 to selectively connect the metamaterial structures 201.
  • An electrolyte material layer 203 is formed on the metamaterial structure 201 and the variable conductivity material layer 202, and the gate electrode 204 is disposed at one end of the substrate 200 to form a region of the electrolyte material layer 203.
  • the gate electrode 204 may change the conductivity of the conductivity-variable material layer 202 by controlling the movement of ions included in the electrolyte material layer 203. .
  • the plurality of metamaterial structures 201 may be integrally connected or separated, thereby changing the resonant frequency and phase.
  • the active metamaterial array of the present invention can reduce the manufacturing cost while having a wide variable width and high resolution frequency and phase selectivity compared to the conventional metamaterial array.
  • FIG. 3A is a view for explaining a method of controlling a metamaterial structure through an electrolyte material layer integrally formed with a size corresponding to the size of the entire metamaterial structure according to an embodiment of the present invention
  • FIG. 3B is a view illustrating the present invention
  • FIG. 3C is a view illustrating a result of varying frequency according to a change in conductivity of a conductive material layer according to an embodiment of the present disclosure, and FIG. 3C illustrates a change in conductivity of a conductive material layer including graphene and a semiconductor according to an embodiment of the present invention
  • 4A is a diagram illustrating a phase shifting result
  • 4A is a diagram for describing a method of controlling a metamaterial structure through a plurality of units of electrolyte material layers arranged in a matrix structure according to an embodiment of the present invention.
  • 4A is a diagram illustrating multiple frequencies in response to modulation of an external voltage connected to a plurality of units of an electrolyte material layer of FIG.
  • FIG. 5 is a diagram illustrating a phase change in phase according to modulation of an external voltage connected to an electrolyte material layer of a unit, and FIG. 5 illustrates that a metamaterial structure is connected to one metamaterial molecular structure according to an embodiment of the present invention. The conceptual diagram shown.
  • the metamaterial structure 201 is disposed on the substrate 200 and spaced apart from each other and formed in a plurality of units.
  • the plurality of metamaterial structures 201 may be arranged in a matrix structure.
  • the meta-material structure 201 is composed of a middle portion formed in a rectangular shape and both ends formed on both sides of the middle portion, the horizontal length of the middle portion is longer than the horizontal length of each end portion, the longitudinal length of the intermediate portion is longitudinal It can be formed smaller than the length. For example, it may be formed in an H shape or an I shape.
  • the metamaterial structure 201 and the gate electrode 204 described later may be formed using the same mask.
  • the conductivity variable material layer 202 may be formed between the plurality of metamaterial structures 201 to selectively connect the metamaterial structures 201.
  • the layer of variable conductivity material 202 may be formed under the metamaterial structure 201 to connect the metamaterial structures 201.
  • the conductivity-variable material layer 202 is formed to have a length that can connect the plurality of metamaterial structures 201, and may be formed in a plurality of units in one direction. In this case, the plurality of units of the variable conductivity material 202 may be spaced apart from each other.
  • the material of the conductive variable material layer 202 may be, but is not limited to, graphene, silicon, an oxide semiconductor, a dielectric-metal transition material, and may be a material having a variable conductivity including other semiconductor materials.
  • the conductive variable material layer 202 may be conductively connected between the metamaterial structures 201, and the plurality of metamaterial structures 201 may be integrally formed through the variable conductivity of the conductive variable material layer 202. By being connected or disconnected, it is possible to change the resonant frequency of the active metamaterial array. In this case, the conductivity of the conductivity-variable material layer 202 may be varied by the movement of ions in the electrolyte material layer 203 which will be described later.
  • the plurality of metamaterial structures 201 may be controlled by one metamaterial molecular structure 300.
  • the metamaterial molecular structure 300 may be connected to a plurality of metamaterial structures 201 arranged in any one of a horizontal, vertical, and matrix manner.
  • the plurality of metamaterial structures 201 may be controlled as one metamaterial molecular structure 300.
  • the metamaterial structure 201 may be controlled as one metamaterial molecular structure 300. Accordingly, the present invention actively controls the phase of the metamaterial structure 201 with the metamaterial molecule structure 300, thereby actively adjusting the propagation direction of the terahertz wave or the focusing point of the active metamaterial flat lens. Can be enabled.
  • an electrolyte material layer 203 is formed on the metamaterial structure 201 and the conductivity varying material layer 202.
  • the electrolyte material layer 203 may be manufactured by a spin coating process or a drop coating process without a pattern, or may be used by forming a pattern through a process such as photolithography or selective photocuring.
  • the electrolyte material layer 203 may be formed in each column of the metamaterial structure 201 integrally formed in a size corresponding to the size of the entire metamaterial structure 201 or arranged in a matrix structure. It may be formed in a plurality of units to correspond to the length of each row.
  • the electrolyte material layer 203 includes a plurality of units of the first electrolyte material layer 210 and the second electrolyte material layer 220, wherein the plurality of units of the first electrolyte are present.
  • the material layer 210 and the second electrolyte material layer 220 may be formed in a bar shape and alternately disposed.
  • the plurality of units of the first electrolyte material layer 210 may be connected to the first gate electrode 211 which will be described later
  • the plurality of units of the second electrolyte material layer 220 may be connected to the second gate electrode 221 which will be described later. Can be.
  • the gate electrode 204 may be disposed at one end of the substrate 200 to contact a region of the electrolyte material layer 203.
  • the gate electrode 204 may vary the conductivity of the variable conductivity material layer 202 by controlling the movement of ions included in the electrolyte material layer 203.
  • the conductivity of the conductivity-variable material layer 202 upon voltage application can be varied through the movement of ions in the electrolyte material layer 203, thereby reducing the conductivity-variable material layer 202.
  • the metamaterial structures 201 connected through the same may form resonance with one metamaterial molecular structure 300.
  • 3B and 3C illustrate a process of changing the resonant frequency and phase of the metamaterial structure 201 according to the change in conductivity of the layer of variable conductivity material 202 according to an embodiment of the present invention.
  • the plurality of metamaterial structures 201 may be molecularly formed into one metamaterial molecular structure 300 and move at a low resonance frequency.
  • the conductivity of the variable-conducting material layer 202 decreases, the molecular material structure 300 is not molecularized, and the plurality of meta-material structures 201 are formed, and the phases are also varied together while moving at a high resonance frequency. It can be seen that.
  • the metamaterial structure 201 may be molecularized and may have a wide frequency and phase variable range.
  • the number of metamaterial structures 201 connected to the metamaterial molecular structure 300 may be determined at the design stage, and by changing the number of conductive variable material layers 202 connected between the metamaterial structures 201. The designer can adjust the desired frequency or phase shift range.
  • the gate electrode 204 is composed of a plurality of units, and each gate electrode 204 is formed at one end and the other end of the substrate 200 and a different voltage is applied to each gate electrode 204. Can be.
  • the gate electrode 204 includes a first gate electrode 211 and a second gate electrode 221 disposed at one end and the other end of the substrate 200, respectively.
  • the first gate electrode 211 may be connected to the plurality of units of the first electrolyte material layer 210
  • the second gate electrode 221 may be connected to the plurality of units of the second electrolyte material layer 220.
  • the first electrolyte material layer 210 and the second electrolyte material layer 220 may operate independently by the first gate electrode 211 and the second gate electrode 221.
  • the voltages V1 and V2 are applied to all the gate electrodes 211 and 221, or V1 or V2 is applied to one gate electrode 211 or 221. Selection of frequency and phase may be possible.
  • FIG. 6 is a flowchart illustrating a method of manufacturing an active metamaterial array according to an embodiment of the present invention.
  • a plurality of metamaterial structures 201 are formed on the substrate 200 to be spaced apart from each other (S110).
  • the conductivity variable material layer 202 is formed to selectively connect the metamaterial structures 201 between the plurality of metamaterial structures 201 (S120).
  • an electrolyte material layer 203 is formed on the metamaterial structure 201 and the variable conductivity material layer 202 (S130).
  • the gate electrode 204 is formed to be disposed at one end of the substrate 200 to contact a region of the electrolyte material layer 203 (S140).
  • the electrolyte material layer 203 may control the movement of ions included in the electrolyte material layer 203 to vary the conductivity of the variable conductivity material layer 202.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Memories (AREA)

Abstract

La présente invention concerne un réseau de métamatériau actif qui comprend : un substrat ; une pluralité de structures de métamatériau disposées sur le substrat et espacées les unes des autres ; une couche de matériau à variation de conductivité formée dans chaque espace entre la pluralité de structures de métamatériau de façon à connecter sélectivement les structures de métamatériau ; une couche de matériau électrolytique formée sur les structures de métamatériau et la couche de matériau à variation de conductivité ; et une électrode de grille disposée à une extrémité du substrat de façon à être en contact avec une région de la couche de matériau électrolytique. Lorsqu'une tension externe est appliquée à l'électrode de grille, l'électrode de grille fait varier la conductivité de la couche de matériau à variation de conductivité par commande de la migration d'ions contenus dans la couche de matériau électrolytique.
PCT/KR2017/001929 2016-03-25 2017-02-22 Réseau de métamatériau actif et son procédé de fabrication Ceased WO2017164523A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/087,701 US11520206B2 (en) 2016-03-25 2017-02-22 Active metamaterial array and method for manufacturing the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2016-0036044 2016-03-25
KR20160036044 2016-03-25
KR1020160132263A KR101785508B1 (ko) 2016-03-25 2016-10-12 능동형 메타물질 어레이 및 그 제조 방법
KR10-2016-0132263 2016-10-12

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WO2017164523A1 true WO2017164523A1 (fr) 2017-09-28

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11456539B2 (en) * 2018-07-27 2022-09-27 Kuang-Chi Cutting Edge Technology Ltd. Absorbing metamaterial

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080136563A1 (en) * 2006-06-30 2008-06-12 Duwel Amy E Electromagnetic composite metamaterial
US20090262766A1 (en) * 2006-10-19 2009-10-22 Houtong Chen Active terahertz metamaterial devices
US20130342279A1 (en) * 2012-06-21 2013-12-26 University Of Notre Dame Du Lac Methods and apparatus for terahertz wave amplitude modulation
US20140048710A1 (en) * 2011-05-03 2014-02-20 Quinfan Xu Device and method for modulating transmission of terahertz waves
US20140085711A1 (en) * 2010-11-05 2014-03-27 Trustees Of Boston College Active manipulation of electromagnetic wave propagation in metamaterials

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080136563A1 (en) * 2006-06-30 2008-06-12 Duwel Amy E Electromagnetic composite metamaterial
US20090262766A1 (en) * 2006-10-19 2009-10-22 Houtong Chen Active terahertz metamaterial devices
US20140085711A1 (en) * 2010-11-05 2014-03-27 Trustees Of Boston College Active manipulation of electromagnetic wave propagation in metamaterials
US20140048710A1 (en) * 2011-05-03 2014-02-20 Quinfan Xu Device and method for modulating transmission of terahertz waves
US20130342279A1 (en) * 2012-06-21 2013-12-26 University Of Notre Dame Du Lac Methods and apparatus for terahertz wave amplitude modulation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11456539B2 (en) * 2018-07-27 2022-09-27 Kuang-Chi Cutting Edge Technology Ltd. Absorbing metamaterial

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