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WO2017025843A1 - Élément électroluminescent, appareil électroluminescent, dispositif électronique, appareil d'affichage, et appareil d'éclairage - Google Patents

Élément électroluminescent, appareil électroluminescent, dispositif électronique, appareil d'affichage, et appareil d'éclairage Download PDF

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WO2017025843A1
WO2017025843A1 PCT/IB2016/054494 IB2016054494W WO2017025843A1 WO 2017025843 A1 WO2017025843 A1 WO 2017025843A1 IB 2016054494 W IB2016054494 W IB 2016054494W WO 2017025843 A1 WO2017025843 A1 WO 2017025843A1
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light
layer
light emitting
emitting
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瀬尾哲史
筒井哲夫
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers

Definitions

  • One embodiment of the present invention relates to a light-emitting element, a display module, a lighting module, a display device, a light-emitting device, an electronic device, and a lighting device.
  • a light-emitting element a display module, a lighting module, a display device, a light-emitting device, an electronic device, and a lighting device.
  • the technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method.
  • one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter).
  • the technical field of one embodiment of the present invention disclosed in this specification more specifically includes a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a memory device, an imaging device, A driving method or a manufacturing method thereof can be given as an example.
  • a light-emitting element (organic EL element) using electroluminescence (EL) using an organic compound has been put into practical use.
  • the basic structure of these light-emitting elements is such that an organic compound layer (EL layer) containing a light-emitting substance is sandwiched between a pair of electrodes. By applying a voltage to this element, light emission from the light-emitting substance can be obtained.
  • a light-emitting element is a self-luminous type, when used as a pixel of a display, there are advantages such as higher visibility than using a liquid crystal as a pixel and no need for a backlight. Is preferred.
  • a display using such a light emitting element has a great advantage that it can be manufactured to be thin and light. Another feature is that the response speed is very fast.
  • this light emitting element can continuously form a light emitting layer in two dimensions, light emission can be obtained in a planar shape. This is a feature that is difficult to obtain with a point light source typified by an incandescent bulb or LED, or a line light source typified by a fluorescent lamp, and therefore has a high utility value as a surface light source applicable to illumination or the like.
  • the organic EL element two types of light emission, that is, light emission from a singlet excited state (fluorescence) and light emission from a triplet excited state (phosphorescence) are obtained depending on the difference in exciton spin state. It is said that the generation probability of a singlet excited state is 25% in a current excited organic EL element, and the generation probability is 75% in a triplet excited state, and a light emitting element using phosphorescence emits light more efficiently. Can be obtained.
  • pixels of at least three colors of red, green, and blue are required.
  • the light obtained from the illuminating device includes three color components of red, green, and blue.
  • Quantum dots are semiconductor nanocrystals with a size of several nanometers, and light of various wavelengths depending on the size can be obtained by the quantum size effect. Quantum dots can be photoexcited and excited by current as well as organic compound light-emitting materials, and research on light-emitting elements using quantum dots as light-emitting materials is also underway (see, for example, Patent Document 1).
  • An object of one embodiment of the present invention is to provide a novel light-emitting element. Another object is to provide a light-emitting element with favorable lifetime. Another object is to provide a light-emitting element with favorable light emission efficiency.
  • Another object of one embodiment of the present invention is to provide a highly reliable light-emitting device, electronic device, and display device. Another object of one embodiment of the present invention is to provide a light-emitting device, an electronic device, and a display device each with low power consumption.
  • the present invention should solve any one of the above-mentioned problems.
  • One embodiment of the present invention includes a first electrode, a second electrode, a layer containing an organic compound located between the first electrode and the second electrode, and a layer containing the organic compound Has a first light emitting unit and a second light emitting unit, and has a charge generation layer between the first light emitting unit and the second light emitting unit, and the first light emitting unit is 1 light emitting layer, the second light emitting unit includes a second light emitting layer, the first light emitting layer includes a first light emitting material, and the second light emitting layer includes:
  • the light emitting device includes two light emitting materials, the first light emitting material is a phosphorescent light emitting material, and the second light emitting material is a quantum dot.
  • Another embodiment of the present invention is a light-emitting element having the above structure, in which a peak wavelength in an emission spectrum of the quantum dots is shorter than a peak wavelength in the phosphorescent light-emitting substance.
  • the quantum dots emit blue light
  • the phosphorescent material emits light having a longer wavelength than blue light
  • another structure of the present invention is a light-emitting element having the above structure, in which the phosphorescent material emits yellow light.
  • the phosphorescent material includes a first phosphorescent material and a second phosphorescent material, and the first phosphorescent material is used.
  • another structure of the present invention is a light-emitting element having the above-described structure, in which light emitted from the light-emitting element is white light emission.
  • another structure of the present invention is a light-emitting device including a light-emitting element having the above structure, a substrate, and a transistor.
  • another structure of the present invention is an electronic device including the light-emitting device having the above structure and a sensor, an operation button, a speaker, or a microphone.
  • another configuration of the present invention is a lighting device including the light emitting device having the above configuration and a housing.
  • the light-emitting device in this specification includes an image display device using a light-emitting element.
  • a connector for example, an anisotropic conductive film or TCP (Tape Carrier Package) attached to a light emitting element, a module provided with a printed wiring board at the end of TCP, or a COG (Chip On Glass) method for a light emitting element.
  • a module on which an IC (integrated circuit) is directly mounted may have a light emitting device.
  • a lighting fixture or the like may include a light emitting device.
  • a novel light-emitting element can be provided.
  • a light-emitting element with favorable lifetime can be provided.
  • a light-emitting element with favorable light emission efficiency can be provided.
  • a highly reliable light-emitting device, electronic device, and display device can be provided.
  • a light-emitting device, an electronic device, and a display device with low power consumption can be provided.
  • FIG. 10 illustrates an electronic device.
  • the figure showing a light source device The figure showing an illuminating device.
  • the figure showing an illuminating device The figure showing an illuminating device.
  • the figure showing an illuminating device The figure showing a vehicle-mounted display apparatus and an illuminating device.
  • FIG. 10 illustrates an electronic device.
  • FIG. 10 illustrates an electronic device.
  • FIG. 1A illustrates a light-emitting element of one embodiment of the present invention.
  • the light-emitting element of one embodiment of the present invention includes an anode 101, a cathode 102, a first light-emitting unit 511, a second light-emitting unit 512, and a charge generation layer 513.
  • the first light emitting unit 511 and the second light emitting unit 512 each include a light emitting layer 113-1 and a light emitting layer 113-2. Further, it may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and other functions.
  • the first light-emitting unit 511 includes a hole-injection layer 111-1, a hole-transport layer 112-1, a light-emitting layer 113-1, and an electron-transport layer 114.
  • the second light emitting unit 512 includes a hole injection layer 111-2, a hole transport layer 112-2, a light emission layer 113-2, an electron transport layer 114-2, an electron A structure having the injection layer 115-2 will be described as an example.
  • the charge generation layer 513 can also play a role in the part of the carrier injection layer (the hole injection layer 111-2 or the electron injection layer 115-1) in contact with the charge generation layer 513 of each light emitting unit. It may not be provided.
  • functions, configurations, and materials of each functional layer will be described.
  • One of the light-emitting layer 113-1 and the light-emitting layer 113-2 in this embodiment is a light-emitting layer that includes a phosphorescent light-emitting substance and obtains light emission from the phosphorescent light-emitting substance, and the other includes quantum dots that are formed from quantum dots. It is a light emitting layer for obtaining light emission.
  • the wavelength of light obtained from the quantum dots is preferably shorter than the wavelength of light obtained from the phosphorescent material, and the peak wavelength is more preferably 500 nm or less.
  • the phosphorescent substance As the phosphorescent substance, a phosphorescent substance whose emission peak has a longer wavelength than that of quantum dots is used. Specifically, since sufficient reliability can be obtained with red to green light emission, a light-emitting element with good reliability can be obtained. Moreover, since phosphorescence is emitted, a light-emitting element with favorable external quantum efficiency can be obtained.
  • the phosphorescent material can obtain a quantum yield of 100%, but the quantum dot quantum yield is about 50 to 60% due to the influence of surface defects. It can be said that a phosphorescent material is preferable to quantum dots.
  • a quantum dot having a peak wavelength of the emission spectrum on the shorter wavelength side than the peak wavelength in the emission spectrum of the phosphorescent material is used.
  • the light emission color as the light emitting element can be white light emission.
  • White light emission is very suitable for lighting applications, and can also be used in full color displays in combination with color filters. When used for a display, it is easy to produce a high-resolution display as compared with the separate coating method, and it is easy to obtain a display with good display quality.
  • White light emission can also be obtained by using two colors of red light emission and green light emission from the phosphorescent material.
  • the lighting device can be a lighting device having high color rendering properties.
  • the transmittance with respect to red and green color filters is increased, so that power consumption can be reduced and the color reproduction range can be increased.
  • Quantum dots are more stable than phosphorescent light-emitting substances, and thus can be a light-emitting element with excellent reliability.
  • the emission wavelength depends not only on the material but also on the size, and furthermore, since the peak width of the emission spectrum is narrow, blue emission with a desired wavelength can be easily obtained with good color purity. That is, although the blue phosphorescent material has high emission efficiency, the spectrum is broader than that of green and red, and the reliability is inferior. However, this problem can be solved by quantum dots.
  • quantum dots have no spin selection and 100% of electrically generated excitons can emit light, it is possible to emit light more efficiently than at least a fluorescent material.
  • phosphorescent materials can increase luminous efficiency by being dispersed in the host.
  • the host material needs triplet excitation energy higher than that of the blue phosphorescent material.
  • Many of such organic compounds have difficulties in life, and there is a problem that it is difficult to apply an excellent host material.
  • quantum dots especially those having a core-shell structure
  • the light emission of one embodiment of the present invention has a longer lifetime and better blue color purity than the combination of a blue phosphorescence unit and a phosphorescence unit exhibiting longer wavelength light emission to form a tandem structure.
  • An element can be obtained.
  • one embodiment of the present invention can increase luminous efficiency, rather than combining a blue fluorescent light emitting unit and a phosphorescent light emitting unit that emits light with a longer wavelength to form a tandem structure. it can.
  • the light emitting element having the tandem structure by using quantum dots as the light emitting material included in the light emitting unit that emits light with a short wavelength, it is possible to use the phosphor light emitting material in the light emitting unit.
  • a light-emitting element that has high reliability and good color purity and better external quantum efficiency than when a fluorescent light-emitting substance is used for the light-emitting unit can be obtained.
  • the peak of the emission spectrum obtained from a quantum dot is 480 nm or less, since white can be obtained in combination with yellow, it is preferable.
  • the peak of the emission spectrum obtained from the quantum dots is preferably 400 nm or more and 480 nm or less, and more preferably 400 nm or more and 470 nm or less from the viewpoint of blue color purity. .
  • the emission wavelength of the quantum dot is longer than the emission wavelength of the phosphorescent light emitting unit.
  • the quantum dot since the quantum dot emits light by absorbing the phosphorescence emission, the balance of light emission is lost, but in this light emitting element, the emission wavelength of the quantum dot is the shortest wavelength. Since the light emission balance does not occur and the light emission balance does not occur, a desired light emission color is easily obtained.
  • the material constituting the quantum dots includes a group 14 element of the periodic table, a compound composed of a plurality of group 14 elements of the periodic table, a group 15 element of the periodic table, a group 16 element of the periodic table, and a periodic table.
  • CdZnSe A compound of indium, arsenic and phosphorus (InAsP), a compound of cadmium, selenium and sulfur (CdSeS), a compound of cadmium, selenium and tellurium (CdSeTe), a compound of zinc, cadmium and selenium (ZnCdSe), indium, gallium and Examples include arsenic compounds (InGaAs), indium, gallium and selenium compounds (InGaSe), indium, selenium and sulfur compounds (InSeS), copper, indium and sulfur compounds (eg, CuInS 2 ), and combinations thereof.
  • an alloy type quantum dot whose composition is represented by arbitrary numbers.
  • an alloy type quantum dot represented by CdS x Se 1-x (x is an arbitrary number from 0 to 1) can change the emission wavelength by changing the ratio of x, so that blue is obtained. Is one of the effective means.
  • Quantum dot structures include a core type, a core-shell type, and a core-multishell type, any of which may be used.
  • the shell by forming the shell with the second inorganic material having a wider band gap covering the core, the influence of defects and dangling bonds existing on the surface of the nanocrystal can be reduced.
  • any inorganic material having a wider band gap than the core for example, the materials mentioned as the material constituting the above-described quantity dot
  • ZnS zinc sulfide
  • ZnO zinc oxide
  • Quantum dots also have high reactivity and are prone to aggregation because of the large proportion of surface atoms. Therefore, it is preferable that a protective agent is attached or a protective group is provided on the surface of the quantum dots. Aggregation can be prevented and solubility in a solvent can be increased by attaching the protective agent or providing a protective group. It is also possible to reduce the reactivity and improve the electrical stability.
  • protecting agent examples include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, tripropylphosphine, tributylphosphine, trihexylphosphine, Trialkylphosphines such as octylphosphine, polyoxyethylene alkylphenyl ethers such as polyoxyethylene n-octylphenyl ether, polyoxyethylene n-nonylphenyl ether, tri (n-hexyl) amine, tri (n-octyl) Tertiary amines such as amine and tri (n-decyl) amine, tripropylphosphine oxide, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphite Organic phosphorus compounds such as oxide and tridecylphosphine oxide
  • the quantum dots may be rod-like quantum rods. Since the quantum rod exhibits light having directivity polarized in the c-axis direction, a light-emitting element with better external quantum efficiency can be obtained by using the quantum rod as a light-emitting material.
  • a material that can be used as a phosphorescent material for example, tris ⁇ 2- [5- (2-methylphenyl) -4- (2,6-dimethylphenyl) -4H-1,2,4] -Triazol-3-yl- ⁇ N2] phenyl- ⁇ C ⁇ iridium (III) (abbreviation: [Ir (mppptz-dmp) 3 ]), tris (5-methyl-3,4-diphenyl-4H-1,2,4 -Triazolato) iridium (III) (abbreviation: [Ir (Mptz) 3 ]), tris [4- (3-biphenyl) -5-isopropyl-3-phenyl-4H-1,2,4-triazolato] iridium (III ) (Abbreviation: [Ir (iPrptz-3b) 3 ]), or an organometallic iridium complex having a 4H-triazo
  • a rare earth metal complex such as tris (acetylacetonato) (monophenanthroline) terbium (III) (abbreviation: [Tb (acac) 3 (Phen)]) can be given. These are compounds that mainly emit green phosphorescence, and have an emission peak at 500 nm to 600 nm. Note that an organometallic iridium complex having a pyrimidine skeleton is particularly preferable because of its outstanding reliability and luminous efficiency.
  • various phosphorescent light emitting materials may be selected and used.
  • TADF material a material that emits thermally activated delayed fluorescence
  • fullerene and its derivatives acridine derivatives such as proflavine, eosin and the like can be used.
  • metal-containing porphyrins including magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), and the like can be given.
  • metal-containing porphyrin examples include a protoporphyrin-tin fluoride complex (SnF 2 (Proto IX)), a mesoporphyrin-tin fluoride complex (SnF 2 (Meso IX)) represented by the following structural formula, and hematoporphyrin.
  • the heterocyclic compound has a ⁇ -electron rich heteroaromatic ring and a ⁇ -electron deficient heteroaromatic ring, both the electron transport property and the hole transport property are high, which is preferable.
  • a substance in which a ⁇ -electron rich heteroaromatic ring and a ⁇ -electron deficient heteroaromatic ring are directly bonded increases both the donor property of the ⁇ -electron rich heteroaromatic ring and the acceptor property of the ⁇ -electron deficient heteroaromatic ring. Since the energy difference between the S 1 level and the T 1 level is small, it is particularly preferable because thermally activated delayed fluorescence can be obtained efficiently.
  • an aromatic ring to which an electron withdrawing group such as a cyano group is bonded may be used.
  • the host material of the light emitting layer will be described.
  • Various carrier transport materials can be used as the host material.
  • the carrier transport material for example, a substance having a hole transport property as shown below, a substance having an electron transport property, or the like can be used. Needless to say, materials having a hole transporting property other than the substances listed below, a material having an electron transporting property, and a material having a bipolar property can also be used.
  • NPB 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl
  • TPD 4,4′-bis [N- (spiro-9,9′-bifluoren-2-yl) ) -N-phenylamino] biphenyl
  • BSPB 4,4′-bis [N- (spiro-9,9′-bifluoren-2-yl) ) -N-phenylamino] biphenyl
  • BSPB 4,4′-bis [N- (spiro-9,9′-bifluoren-2-yl) ) -N-phenylamino] biphenyl
  • BPAFLP 4-phenyl-4 '-(9-phenylfluoren-9-yl) triphenylamine
  • mBPAFLP 4-phenyl-4 ′-(9-phenyl-9H-carbamate
  • bis (10-hydroxybenzo [h] quinolinato) beryllium (II) (abbreviation: BeBq 2 ), bis (2-methyl-8-quinolinolato) (4-phenylphenolato) Aluminum (III) (abbreviation: BAlq), bis (8-quinolinolato) zinc (II) (abbreviation: Znq), bis [2- (2-benzoxazolyl) phenolato] zinc (II) (abbreviation: ZnPBO), Metal complexes such as bis [2- (2-benzothiazolyl) phenolato] zinc (II) (abbreviation: ZnBTZ), 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4 -Oxadiazole (abbreviation: PBD), 3- (4-biphenylyl) -4-phenyl-5- (4-tert-butylpheny
  • a heterocyclic compound having a diazine skeleton and a heterocyclic compound having a pyridine skeleton are preferable because of their good reliability.
  • a heterocyclic compound having a diazine (pyrimidine or pyrazine) skeleton has a high electron transporting property and contributes to a reduction in driving voltage.
  • the host material may be a material in which a plurality of types of substances are mixed.
  • a mixed host material it is preferable to mix a material having an electron transporting property and a material having a hole transporting property. .
  • the exciplex selects a combination that forms an exciplex that emits light that overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting material, energy transfer becomes smooth and light can be emitted efficiently. preferable. Moreover, it is preferable because the driving voltage is also reduced.
  • the film pressure of the light-emitting layer is 3 to 100 nm, preferably 10 to 100 nm, and the quantum dot content in the light-emitting layer is 1 ⁇ 100% by volume.
  • the quantum dots are dispersed in the host material, or the host material and the quantum dots are dissolved or dispersed in an appropriate liquid medium, and wet.
  • It may be formed by a process (spin coating method, cast method, die coating method, blade coating method, roll coating method, ink jet method, printing method, spray coating method, curtain coating method, Langmuir-Blodget method, etc.).
  • a vacuum deposition method can be suitably used in addition to the wet process.
  • liquid medium used in the wet process examples include ketones such as methyl ethyl ketone and cyclohexanone, fatty acid esters such as ethyl acetate, halogenated hydrocarbons such as dichlorobenzene, and aromatic carbonization such as toluene, xylene, mesitylene, and cyclohexyl benzene. Hydrogen, aliphatic hydrocarbons such as cyclohexane, decalin, and dodecane, and organic solvents such as dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) can be used.
  • ketones such as methyl ethyl ketone and cyclohexanone
  • fatty acid esters such as ethyl acetate
  • halogenated hydrocarbons such as dichlorobenzene
  • aromatic carbonization such as toluene, xylene, mesitylene, and cyclohexyl benzene.
  • the hole injection layers 111-1 and 111-2 are layers for improving the injection property of holes into each light emitting unit, and are layers containing a substance having a hole injection property.
  • the substance having a hole injecting property include transition metal oxides, particularly oxides of metals belonging to Groups 4 to 8 in the periodic table (for example, molybdenum oxide, vanadium oxide, ruthenium oxide, rhenium oxide).
  • transition metals in particular, metal complexes belonging to Group 4 to Group 8 of the periodic table (for example, molybdenum tris [1,2-bis (trifluoromethyl) ethane-1,2- Dithiolene] (abbreviation: molybdenum complex such as Mo (tfd) 3 ) can be used.
  • molybdenum tris [1,2-bis (trifluoromethyl) ethane-1,2- Dithiolene] abbreviation: molybdenum complex such as Mo (tfd) 3
  • Transition metal oxides especially oxides of metals belonging to Groups 4 to 8 in the periodic table
  • transition metals especially complexes of metals belonging to Groups 4 to 8 in the periodic table
  • An electron withdrawing group acts as an acceptor.
  • the acceptor can withdraw electrons from an adjacent hole transport layer (or hole transport material) by applying an electric field at least.
  • phthalocyanine compounds such as phthalocyanine (abbreviation: H 2 Pc) and copper phthalocyanine (CuPC), 4,4′-bis [N- (4-diphenylaminophenyl) -N-phenylamino] biphenyl (abbreviation: DPAB), N, N′-bis ⁇ 4- [bis (3-methylphenyl) amino] phenyl ⁇ -N, N′-diphenyl- (1,1′-biphenyl) -4,4′-diamine (abbreviation:
  • the hole injection layers 111-1, 111- are also formed by aromatic amine compounds such as DNTPD) or polymers such as poly (3,4-ethylenedioxythiophene) / poly (styrenesulfonic acid) (PEDOT / PSS). 2 can be formed.
  • the hole injecting layer By forming the hole injecting layer, the hole injecting property is improved and a light emitting element with a low driving voltage can be obtained.
  • the hole transport layers 112-1 and 112-2 are layers containing a hole transporting substance.
  • the hole transporting material is preferably an organic compound having a high hole transporting property, and specifically, a material having a hole mobility of 10 ⁇ 6 cm 2 / Vs or more is preferable.
  • NPB 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl
  • TPD N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [ 1,1′-biphenyl] -4,4′-diamine
  • TDATA 4,4 ′, 4 ′′ -tris (N, N-diphenylamino) triphenylamine
  • TDATA 4,4 ', 4''-tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine
  • MTDATA 4,4'-bis [N- (spiro-9,9'-bifluorene- 2-yl) -N-phenylamino] biphenyl
  • BSPB 4,4'-bis [N- (spiro-9,9'-bifluorene- 2-yl) -N-phenylamino] biphenyl
  • the electron transport layers 114-1 and 114-2 are layers containing a substance having an electron transport property.
  • a substance having an electron transporting property those exemplified as the substance having an electron transporting property that can be used for the host material can be used. Further, an n-type compound semiconductor may be used.
  • ZrSiO 4 zirconium silicate
  • nitrides such as silicon nitride (Si 3 N 4 ), c
  • lithium fluoride (LiF) or fluorine is used as the electron injection layers 115-1 and 115-2.
  • An alkali metal or alkaline earth metal such as cesium fluoride (CsF) or calcium fluoride (CaF 2 ) or a compound thereof may be provided.
  • an alkali metal or alkaline earth metal or a compound thereof or an electride may be used in a layer made of a substance having an electron transporting property. Examples of the electride include a substance obtained by adding a high concentration of electrons to a mixed oxide of calcium and aluminum. Note that a structure in which the electron transport layer 114-1 and the charge generation layer 513, and the electron transport layer 114-2 and the cathode 102 are in direct contact without providing the electron injection layers 115-1 and 115-2 may be employed.
  • the charge generation layer 513 has a function of injecting electrons into one light-emitting unit and injecting holes into the other light-emitting unit when a voltage is applied to the first electrode 101 and the second electrode 102. That is, in FIG. 1B, in the case where a voltage is applied so that the potential of the first electrode is higher than the potential of the second electrode, the charge generation layer 513 supplies electrons to the first light-emitting unit 511. As long as it injects holes into the second light emitting unit 512.
  • the charge generation layer 513 includes at least a P layer.
  • the P layer is made of a light-transmitting oxide conductor such as ITO, an organic acceptor material having an electron-withdrawing group (halogen group or cyano group) such as F 4 -TCNQ, chloranil, or HAT-CN, vanadium oxide, or oxide.
  • Acceptors such as transition metal oxides such as niobium, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, rhenium oxide, metal oxides belonging to Groups 4 to 8 of the periodic table, or metal salts such as iron chloride What is necessary is just to form with the material which has property.
  • Transition metal oxides and oxides of metals belonging to Groups 4 to 8 in the periodic table of the elements also have an acceptor property even with respect to a substance having a hole transporting property having a HOMO lower than -5.4 eV (deep) ( It is preferable because electrons can be extracted at least by application of an electric field.
  • a compound having an electron withdrawing group halogen group or cyano group
  • a compound in which an electron withdrawing group is bonded to a condensed aromatic ring having a plurality of heteroatoms such as HAT-CN is thermally stable. Therefore, it is preferable.
  • the transition metal oxide molybdenum oxide is preferable because it is stable in the air, has a low hygroscopic property, and is easy to handle.
  • the P layer may be formed by stacking a material having an acceptor property and a material having a hole transporting property. By applying a potential to the P layer, holes are injected into the second light emitting unit 512 and electrons are injected into the first light emitting unit 511, so that the light emitting element operates.
  • the charge generation layer 513 may be provided with one or both of an electron relay layer and an electron injection buffer layer in addition to the P layer.
  • the electron relay layer contains at least a substance having an electron transporting property and is provided between the P layer and the electron injection buffer layer, and has a function of smoothly transferring electrons by preventing the interaction between the electron injection buffer layer and the P layer.
  • the LUMO level of the substance having an electron transporting property contained in the electron relay layer is the substance contained in the layer in contact with the charge generation layer 513 in the first light emitting unit 511 and the LUMO level of the acceptor material in the P layer. It is preferably located between the LUMO levels of
  • the specific energy level of the LUMO level in the substance having an electron transporting property used for the electron relay layer is ⁇ 5.0 eV or more, preferably ⁇ 5.0 eV or more and ⁇ 3.0 eV or less. Note that as the substance having an electron transporting property used for the electron relay layer, a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand is preferably used.
  • the electron injection buffer layer includes alkali metals, alkaline earth metals, rare earth metals, and compounds thereof (including alkali metal compounds (including oxides such as lithium oxide, halides, carbonates such as lithium carbonate and cesium carbonate), Highly electron-injecting materials such as alkaline earth metal compounds (including oxides, halides and carbonates) or rare earth metal compounds (including oxides, halides and carbonates) can be used. is there.
  • the donor substance may be an alkali metal, an alkaline earth metal, a rare earth metal, or a compound thereof (alkaline Metal compounds (including oxides such as lithium oxide, halides, carbonates such as lithium carbonate and cesium carbonate), alkaline earth metal compounds (including oxides, halides, carbonates), or rare earth metal compounds ( In addition to oxides, halides, and carbonates)), organic compounds such as tetrathianaphthacene (abbreviation: TTN), nickelocene, decamethyl nickelocene, and the like can also be used.
  • TTN tetrathianaphthacene
  • nickelocene decamethyl nickelocene, and the like
  • the substance having an electron transporting property can be formed using a material similar to the material forming the electron transport layers 114-1 and 114-2 described above.
  • the anode 101 is preferably formed using a metal, an alloy, a conductive compound, a mixture thereof, or the like having a high work function (specifically, 4.0 eV or more).
  • a metal an alloy, a conductive compound, a mixture thereof, or the like having a high work function (specifically, 4.0 eV or more).
  • ITO Indium Tin Oxide
  • IWZO indium oxide-tin oxide
  • These conductive metal oxide films are usually formed by a sputtering method, but may be formed by applying a sol-gel method or the like.
  • indium oxide-zinc oxide is formed by a sputtering method using a target in which 1 to 20 wt% of zinc oxide is added to indium oxide.
  • indium oxide (IWZO) containing tungsten oxide and zinc oxide is formed by sputtering using a target containing 0.5 to 5 wt% tungsten oxide and 0.1 to 1 wt% zinc oxide with respect to indium oxide.
  • Graphene can also be used. Note that by using a composite material described later for a layer in contact with the anode 101 in the EL layer 103, an electrode material can be selected regardless of a work function.
  • Examples of the material forming the cathode 102 include alkali metals such as lithium (Li) and cesium (Cs), and groups 1 and 2 of the periodic table of elements such as magnesium (Mg), calcium (Ca), and strontium (Sr). Elements belonging to the group, and alloys containing these (MgAg, AlLi), europium (Eu), ytterbium (Yb) and other rare earth metals and alloys containing these, ITO, silicon or indium oxide-tin oxide containing silicon oxide, Examples thereof include indium oxide-zinc oxide, tungsten oxide, and indium oxide (IWZO) containing zinc oxide.
  • alkali metals such as lithium (Li) and cesium (Cs)
  • groups 1 and 2 of the periodic table of elements such as magnesium (Mg), calcium (Ca), and strontium (Sr). Elements belonging to the group, and alloys containing these (MgAg, AlLi), europium (Eu), ytterbium
  • a conductive material can be used as the cathode 102.
  • These conductive materials can be formed by a dry method such as a vacuum evaporation method or a sputtering method, an inkjet method, a spin coating method, or the like.
  • a sol-gel method may be used for a wet method, or a metal material paste may be used for a wet method.
  • various methods can be used regardless of a dry method or a wet method.
  • vacuum deposition method wet process method (spin coating method, casting method, die coating method, blade coating method, roll coating method, ink jet method, printing method (gravure printing method, offset printing method, screen printing method, etc.), spray coating Method, curtain coating method, Langmuir / Blodgett method, etc.).
  • each electrode or each layer described above may be formed by using different film forming methods.
  • the structure of the layers provided between the anode 101 and the cathode 102 is not limited to the above. However, a light emitting region in which holes and electrons are recombined at a site away from the anode 101 and the cathode 102 so that quenching caused by the proximity of the light emitting region and the metal used for the electrode or carrier injection layer is suppressed.
  • the structure provided with is preferable.
  • the hole transport layer and the electron transport layer in contact with the light emitting layers 113-1, 113-2, in particular, the carrier transport layer near the recombination region in the light emitting layers 113-1, 113-2 are excitons generated in the light emitting layer.
  • the band gap is made of a light-emitting substance constituting the light-emitting layer or a substance having a band gap larger than that of the emission center substance contained in the light-emitting layer.
  • Embodiment 2 In this embodiment, a light-emitting device using the light-emitting element described in Embodiment 1 will be described.
  • FIGS. 2A is a top view illustrating the light-emitting device
  • FIG. 2B is a cross-sectional view taken along lines AB and CD of FIG. 2A.
  • This light-emitting device includes a drive circuit portion (source line drive circuit) 601, a pixel portion 602, and a drive circuit portion (gate line drive circuit) 603 indicated by dotted lines, which control light emission of the light-emitting elements.
  • Reference numeral 604 denotes a sealing substrate
  • reference numeral 605 denotes a sealing material
  • the inside surrounded by the sealing material 605 is a space 607.
  • the lead wiring 608 is a wiring for transmitting a signal input to the source line driver circuit 601 and the gate line driver circuit 603, and a video signal, a clock signal, an FPC (flexible printed circuit) 609 serving as an external input terminal, Receives start signal, reset signal, etc.
  • FPC flexible printed circuit
  • a printed wiring board PWB
  • the light-emitting device in this specification includes not only a light-emitting device body but also a state in which an FPC or a PWB is attached thereto.
  • a driver circuit portion and a pixel portion are formed over the element substrate 610.
  • a source line driver circuit 601 that is a driver circuit portion and one pixel in the pixel portion 602 are illustrated.
  • the element substrate 610 is manufactured using a substrate made of glass, quartz, organic resin, metal, alloy, semiconductor, or the like, or a plastic substrate made of FRP (Fiber Reinforced Plastics), PVF (polyvinyl fluoride), polyester, acrylic, or the like. That's fine.
  • FRP Fiber Reinforced Plastics
  • PVF polyvinyl fluoride
  • the structure of a transistor used for a pixel or a drive circuit is not particularly limited.
  • an inverted staggered transistor or a staggered transistor may be used.
  • a top-gate transistor or a bottom-gate transistor may be used.
  • the semiconductor material used for the transistor is not particularly limited, and for example, silicon, germanium, silicon carbide, gallium nitride, or the like can be used.
  • an oxide semiconductor containing at least one of indium, gallium, and zinc, such as an In—Ga—Zn-based metal oxide, may be used.
  • crystallinity of a semiconductor material used for the transistor there is no particular limitation on the crystallinity of a semiconductor material used for the transistor, and any of an amorphous semiconductor and a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partially including a crystal region) is used. May be used. It is preferable to use a crystalline semiconductor because deterioration of transistor characteristics can be suppressed.
  • an oxide semiconductor to a semiconductor device such as a transistor used in a touch sensor or the like described later in addition to the transistor provided in the pixel or the driver circuit.
  • an oxide semiconductor having a wider band gap than silicon is preferably used. By using an oxide semiconductor having a wider band gap than silicon, current in an off state of the transistor can be reduced.
  • the oxide semiconductor preferably contains at least indium (In) or zinc (Zn).
  • the oxide semiconductor includes an oxide represented by an In-M-Zn-based oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf). Is more preferable.
  • the semiconductor layer has a plurality of crystal parts, and the crystal part has a c-axis oriented perpendicular to the formation surface of the semiconductor layer or the top surface of the semiconductor layer, and a grain boundary between adjacent crystal parts. It is preferable to use an oxide semiconductor film which does not contain any oxide.
  • the transistor having the above-described semiconductor layer can hold the charge accumulated in the capacitor through the transistor for a long time due to the low off-state current.
  • the driving circuit can be stopped while maintaining the gradation of an image displayed in each display region. As a result, an electronic device with extremely low power consumption can be realized.
  • a base film in order to stabilize transistor characteristics.
  • an inorganic insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film can be used, which can be formed as a single layer or a stacked layer.
  • the base film is formed by sputtering, CVD (Chemical Vapor Deposition) (plasma CVD, thermal CVD, MOCVD (Metal Organic CVD), etc.), ALD (Atomic Layer Deposition), coating, printing, etc. it can. Note that the base film is not necessarily provided if not necessary.
  • the FET 623 indicates one of the transistors formed in the drive circuit portion 601.
  • the driving circuit may be formed of various CMOS circuits, PMOS circuits, or NMOS circuits.
  • CMOS circuits complementary metal-oxide-semiconductor
  • PMOS circuits PMOS circuits
  • NMOS circuits NMOS circuits.
  • a driver body shape in which a driver circuit is formed over a substrate is shown; however, this is not always necessary, and the driver circuit can be formed outside the substrate.
  • the pixel portion 602 is formed by a plurality of pixels including the switching FET 611, the current control FET 612, and the first electrode 613 electrically connected to the drain thereof, but is not limited thereto.
  • the pixel portion may be a combination of two or more FETs and a capacitor.
  • an insulator 614 is formed so as to cover an end portion of the first electrode 613.
  • a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulator 614.
  • positive photosensitive acrylic is used as the material of the insulator 614
  • the insulator 614 either a negative photosensitive resin or a positive photosensitive resin can be used.
  • the EL layer 616 and the second electrode 617 are formed on the first electrode 613, respectively.
  • a material used for the first electrode 613 functioning as an anode a material having a high work function is preferably used.
  • a stack of a titanium nitride film and a film containing aluminum as a main component, a three-layer structure including a titanium nitride film, a film containing aluminum as a main component, and a titanium nitride film can be used. Note that with a stacked structure, resistance as a wiring is low, good ohmic contact can be obtained, and a function as an anode can be obtained.
  • the EL layer 616 is formed by various methods such as an evaporation method using an evaporation mask, an ink jet method, and a spin coating method.
  • the EL layer 616 includes the structure described in Embodiment 1.
  • a low molecular compound or a high molecular compound may be used as another material forming the EL layer 616.
  • the second electrode 617 formed over the EL layer 616 and functioning as a cathode a material having a low work function (Al, Mg, Li, Ca, or an alloy or compound thereof (MgAg, MgIn, AlLi etc.) is preferred.
  • the second electrode 617 includes a thin metal film and a transparent conductive film (ITO, 2 to 20 wt% oxidation).
  • ITO transparent conductive film
  • a stack of indium oxide containing zinc, indium tin oxide containing silicon, zinc oxide (ZnO), or the like is preferably used.
  • a light-emitting element is formed using the first electrode 613, the EL layer 616, and the second electrode 617.
  • the light-emitting element is the light-emitting element described in Embodiment 1. Note that although a plurality of light-emitting elements are formed in the pixel portion, the light-emitting device in this embodiment includes both the light-emitting element described in Embodiment 1 and light-emitting elements having other configurations. It may be.
  • the sealing substrate 604 is bonded to the element substrate 610 with the sealant 605, whereby the light-emitting element 618 is provided in the space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealant 605. Yes.
  • the space 607 is filled with a filler and may be filled with a sealing material in addition to the case of being filled with an inert gas (such as nitrogen or argon).
  • an inert gas such as nitrogen or argon.
  • a recess is formed in the sealing substrate, and a desiccant is provided therein, whereby deterioration due to the influence of moisture can be suppressed, which is a preferable configuration.
  • an epoxy resin or glass frit is preferably used for the sealant 605. Moreover, it is desirable that these materials are materials that do not transmit moisture and oxygen as much as possible.
  • a plastic substrate made of FRP (Fiber Reinforced Plastics), PVF (polyvinyl fluoride), polyester, acrylic, or the like can be used as a material used for the sealing substrate 604.
  • a protective film may be provided on the second electrode.
  • the protective film may be formed of an organic resin film or an inorganic insulating film. Further, a protective film may be formed so as to cover the exposed portion of the sealant 605. The protective film can be provided so as to cover the exposed side surfaces of the surface and side surfaces of the pair of substrates, the sealing layer, the insulating layer, and the like.
  • the protective film can be made of a material that hardly permeates impurities such as water. Therefore, it is possible to effectively suppress the diffusion of impurities such as water from the outside to the inside.
  • oxide, nitride, fluoride, sulfide, ternary compound, metal or polymer can be used as a material constituting the protective film.
  • oxide, nitride, fluoride, sulfide, ternary compound, metal or polymer can be used.
  • the protective film is preferably formed using a film forming method having good step coverage.
  • a film forming method having good step coverage there is an atomic layer deposition (ALD: Atomic Layer Deposition) method.
  • a material that can be formed by an ALD method is preferably used for the protective film.
  • ALD method a dense protective film with reduced defects such as cracks and pinholes or a uniform thickness can be formed.
  • damage to the processed member when forming the protective film can be reduced.
  • a uniform protective film with few defects can be formed on the surface having a complicated uneven shape and the top surface, side surface, and back surface of the touch panel.
  • the light-emitting device described in Embodiment 1 uses the light-emitting element described in Embodiment 1, a light-emitting device having favorable characteristics can be obtained. Specifically, since the light-emitting element described in Embodiment 1 is a light-emitting element with a long lifetime, a light-emitting device with favorable reliability can be obtained. Further, since the light-emitting device using the light-emitting element described in Embodiment 1 has favorable light emission efficiency, the light-emitting device with low power consumption can be obtained.
  • FIG. 3 shows an example of a light emitting device in which a light emitting element exhibiting white light emission is formed and full color is provided by providing a colored layer (color filter) or the like.
  • 3A shows a substrate 1001, a base insulating film 1002, a gate insulating film 1003, gate electrodes 1006, 1007, and 1008, a first interlayer insulating film 1020, a second interlayer insulating film 1021, a peripheral portion 1042, and a pixel portion.
  • a driver circuit portion 1041 light emitting element first electrodes 1024W, 1024R, 1024G, and 1024B, a partition wall 1025, an EL layer 1028, a light emitting element second electrode 1029, a sealing substrate 1031, a sealant 1032, and the like are illustrated. ing.
  • colored layers are provided on a transparent substrate 1033.
  • a black matrix 1035 may be further provided.
  • the transparent base material 1033 provided with the coloring layer and the black matrix is aligned and fixed to the substrate 1001. Note that the coloring layer and the black matrix 1035 are covered with an overcoat layer 1036.
  • there are a light emitting layer that emits light without passing through the colored layer and a light emitting layer that emits light through the colored layer of each color, and passes through the colored layer. Since the light that does not pass is white, and the light that passes through the colored layer is red, green, and blue, an image can be expressed by pixels of four colors.
  • FIG. 3B illustrates an example in which a colored layer (a red colored layer 1034R, a green colored layer 1034G, and a blue colored layer 1034B) is formed between the gate insulating film 1003 and the first interlayer insulating film 1020.
  • the coloring layer may be provided between the substrate 1001 and the sealing substrate 1031.
  • a light-emitting device having a structure in which light is extracted to the substrate 1001 side on which the FET is formed (bottom emission type) is used. ).
  • a cross-sectional view of a top emission type light emitting device is shown in FIG.
  • a substrate that does not transmit light can be used as the substrate 1001.
  • the connection electrode for connecting the FET and the anode of the light emitting element is manufactured, it is formed in the same manner as the bottom emission type light emitting device.
  • a third interlayer insulating film 1037 is formed so as to cover the electrode 1022. This insulating film may play a role of planarization.
  • the third interlayer insulating film 1037 can be formed using other known materials in addition to the same material as the second interlayer insulating film.
  • the first electrodes 1024W, 1024R, 1024G, and 1024B of the light emitting elements are anodes here, but may be cathodes. In the case of a top emission type light emitting device as shown in FIG. 4, the first electrode is preferably a reflective electrode.
  • the EL layer 1028 has a structure as described for the EL layer 103 in Embodiment 1 and an element structure in which white light emission can be obtained.
  • sealing can be performed with a sealing substrate 1031 provided with colored layers (red colored layer 1034R, green colored layer 1034G, and blue colored layer 1034B).
  • a black matrix 1035 may be provided on the sealing substrate 1031 so as to be positioned between the pixels.
  • the colored layer (red colored layer 1034R, green colored layer 1034G, blue colored layer 1034B) and black matrix may be covered with an overcoat layer 1036.
  • the sealing substrate 1031 is a light-transmitting substrate.
  • full-color display is performed with four colors of red, green, blue, and white
  • full-color with four colors of red, yellow, green, and blue, and three colors of red, green, and blue. Display may be performed.
  • the top emission type light emitting device can be suitably applied with a microcavity structure.
  • a light-emitting element having a microcavity structure is obtained by using a first electrode as a reflective electrode and a second electrode as a semi-transmissive / semi-reflective electrode. Between the reflective electrode and the semi-transmissive / semi-reflective electrode, at least an EL layer is provided, and at least a light-emitting layer serving as a light emitting region is provided.
  • the reflective electrode is a film having a visible light reflectance of 40% to 100%, preferably 70% to 100%, and a resistivity of 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • the semi-transmissive / semi-reflective electrode is a film having a visible light reflectance of 20% to 80%, preferably 40% to 70%, and a resistivity of 1 ⁇ 10 ⁇ 2 ⁇ cm or less. .
  • the light emitted from the light emitting layer included in the EL layer is reflected by the reflective electrode and the semi-transmissive / semi-reflective electrode and resonates.
  • the light-emitting element can change the optical distance between the reflective electrode and the semi-transmissive / semi-reflective electrode by changing the thickness of the transparent conductive film, the composite material, or the carrier transport material. Thereby, between the reflective electrode and the semi-transmissive / semi-reflective electrode, it is possible to strengthen the light having a wavelength that resonates and attenuate the light having a wavelength that does not resonate.
  • the light (first reflected light) reflected and returned by the reflective electrode causes a large interference with the light (first incident light) directly incident on the semi-transmissive / semi-reflective electrode from the light emitting layer, it is reflected.
  • the optical distance between the electrode and the light emitting layer is 2n-1) ⁇ / 4 (where n is a natural number of 1 or more and ⁇ is the wavelength of light emission to be amplified).
  • the EL layer may have a structure having a plurality of light emitting layers or a structure having a single light emitting layer.
  • a plurality of EL layers may be provided in one light-emitting element with a charge generation layer interposed therebetween, and one or a plurality of light-emitting layers may be formed in each EL layer.
  • microcavity structure Since it has a microcavity structure, it is possible to increase the light emission intensity in the front direction of a specific wavelength, so that power consumption can be reduced.
  • a microcavity structure that matches the wavelength of each color can be applied to all the lucky pixels in addition to the luminance enhancement effect by yellow light emission. Therefore, a light-emitting device with favorable characteristics can be obtained.
  • the light-emitting device described in Embodiment 1 uses the light-emitting element described in Embodiment 1, a light-emitting device having favorable characteristics can be obtained. Specifically, since the light-emitting element described in Embodiment 1 is a light-emitting element with a long lifetime, a light-emitting device with favorable reliability can be obtained. Further, since the light-emitting device using the light-emitting element described in Embodiment 1 has favorable light emission efficiency, the light-emitting device with low power consumption can be obtained.
  • FIG. 5 shows a passive matrix light-emitting device manufactured by applying the present invention.
  • 5A is a perspective view illustrating the light-emitting device
  • FIG. 5B is a cross-sectional view taken along line XY in FIG. 5A.
  • an EL layer 955 is provided over the substrate 951 between the electrode 952 and the electrode 956.
  • An end portion of the electrode 952 is covered with an insulating layer 953.
  • a partition layer 954 is provided over the insulating layer 953.
  • the side wall of the partition wall layer 954 has an inclination such that the distance between one side wall and the other side wall becomes narrower as it approaches the substrate surface.
  • the cross section in the short side direction of the partition wall layer 954 has a trapezoidal shape, and the bottom side (the side facing the insulating layer 953 in the same direction as the surface direction of the insulating layer 953) is the top side (the surface of the insulating layer 953).
  • the direction is the same as the direction and is shorter than the side not in contact with the insulating layer 953.
  • the light-emitting element described in Embodiment 1 is used, so that a light-emitting device with favorable reliability or a light-emitting device with low power consumption can be obtained.
  • the light-emitting device described above is a light-emitting device that can be suitably used as a display device that expresses an image because it can control a large number of minute light-emitting elements arranged in a matrix.
  • FIGS. 6B is a top view of the lighting device
  • FIG. 6A is a cross-sectional view taken along line ef in FIG. 6B.
  • a first electrode 401 is formed over a light-transmitting substrate 400 that is a support.
  • the first electrode 401 corresponds to the anode 101 in Embodiment 1.
  • the first electrode 401 is formed using a light-transmitting material.
  • a pad 412 for supplying a voltage to the second electrode 404 is formed on the substrate 400.
  • the EL layer 403 is formed over the first electrode 401.
  • the EL layer 403 corresponds to the structure of the EL layer 103 in Embodiment 1, or a structure in which the light-emitting units 511 and 512 and the charge generation layer 513 are combined. For these configurations, refer to the description.
  • the second electrode 404 is formed so as to cover the EL layer 403.
  • the second electrode 404 corresponds to the cathode 102 in Embodiment 1.
  • the second electrode 404 is formed using a highly reflective material. A voltage is supplied to the second electrode 404 by being connected to the pad 412.
  • the lighting device described in this embodiment includes a light-emitting element including the first electrode 401, the EL layer 403, and the second electrode 404. Since the light-emitting element is a light-emitting element with high emission efficiency, the lighting device in this embodiment can be a lighting device with low power consumption.
  • the substrate 400 on which the light-emitting element having the above structure is formed and the sealing substrate 407 are fixed using sealing materials 405 and 406 and sealed, whereby the lighting device is completed. Either one of the sealing materials 405 and 406 may be used.
  • a desiccant can be mixed in the inner sealing material 406 (not shown in FIG. 6B), so that moisture can be adsorbed and reliability can be improved.
  • an external input terminal can be obtained.
  • an IC chip 420 mounted with a converter or the like may be provided thereon.
  • the lighting device described in this embodiment uses the light-emitting element described in Embodiment 1 as an EL element, and thus can be a highly reliable light-emitting device. In addition, a light-emitting device with favorable heat resistance can be obtained.
  • Embodiment 4 examples of electronic devices each including the light-emitting element described in Embodiment 1 will be described.
  • the light-emitting element described in Embodiment 1 has a long lifetime and is a highly reliable light-emitting element.
  • the electronic device described in this embodiment can be an electronic device having a highly reliable light-emitting portion.
  • a television device also referred to as a television or a television receiver
  • a monitor for a computer a digital camera, a digital video camera, a digital photo frame
  • a mobile phone a mobile phone
  • Large-sized game machines such as portable telephones, portable game machines, portable information terminals, sound reproduction apparatuses, and pachinko machines. Specific examples of these electronic devices are shown below.
  • FIG. 7A illustrates an example of a television device.
  • a display portion 7103 is incorporated in a housing 7101.
  • a structure in which the housing 7101 is supported by a stand 7105 is shown.
  • Images can be displayed on the display portion 7103, and the display portion 7103 is formed by arranging the light-emitting elements described in Embodiment 1 in a matrix.
  • the television device can be operated with an operation switch included in the housing 7101 or a separate remote controller 7110.
  • Channels and volume can be operated with an operation key 7109 provided in the remote controller 7110, and an image displayed on the display portion 7103 can be operated.
  • the remote controller 7110 may be provided with a display portion 7107 for displaying information output from the remote controller 7110.
  • the television device is provided with a receiver, a modem, and the like.
  • General TV broadcasts can be received by a receiver, and connected to a wired or wireless communication network via a modem, so that it can be unidirectional (sender to receiver) or bidirectional (sender and receiver). It is also possible to perform information communication between each other or between recipients).
  • FIG. 7B1 illustrates a computer, which includes a main body 7201, a housing 7202, a display portion 7203, a keyboard 7204, an external connection port 7205, a pointing device 7206, and the like. Note that this computer is manufactured by using the light-emitting elements described in Embodiment 1 for the display portion 7203 in a matrix.
  • the computer shown in FIG. 7B1 may have a form as shown in FIG.
  • a computer in FIG. 7B2 includes a second display portion 7210 instead of the keyboard 7204 and the pointing device 7206.
  • the second display portion 7210 is a touch panel type, and input can be performed by operating a display for input displayed on the second display portion 7210 with a finger or a dedicated pen.
  • the second display portion 7210 can display not only an input display but also other images.
  • the display portion 7203 may also be a touch panel.
  • FIG. 7C illustrates a portable game machine which includes two housings, a housing 7301 and a housing 7302, which are connected with a joint portion 7303 so that the portable game machine can be opened or folded.
  • a display portion 7304 manufactured by arranging the light-emitting elements described in Embodiment 1 in a matrix is incorporated in the housing 7301, and a display portion 7305 is incorporated in the housing 7302.
  • the portable game machine shown in FIG. 7C includes a speaker portion 7306, a recording medium insertion portion 7307, an LED lamp 7308, input means (operation keys 7309, a connection terminal 7310, a sensor 7311 (force, displacement, position).
  • the structure of the portable game machine is not limited to the above, and is manufactured by arranging the light-emitting elements described in Embodiment 1 in a matrix at least on one or both of the display portion 7304 and the display portion 7305.
  • a display unit may be used, and other attached equipment may be appropriately provided.
  • FIG. 7C shares information by reading a program or data recorded in a recording medium and displaying the program or data on a display unit, or by performing wireless communication with another portable game machine. It has a function. Note that the portable game machine illustrated in FIG. 7C is not limited to this, and can have a variety of functions.
  • FIG. 7D illustrates an example of a mobile terminal.
  • the mobile phone includes a display portion 7402 incorporated in a housing 7401, operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like.
  • the cellular phone 7400 includes a display portion 7402 manufactured by arranging the light-emitting elements described in Embodiment 1 in a matrix.
  • the portable terminal illustrated in FIG. 7D can have a structure in which information can be input by touching the display portion 7402 with a finger or the like. In this case, operations such as making a call or creating a mail can be performed by touching the display portion 7402 with a finger or the like.
  • the first mode is a display mode mainly for displaying an image.
  • the first is a display mode mainly for displaying images, and the second is an input mode mainly for inputting information such as characters.
  • the third is a display + input mode in which the display mode and the input mode are mixed.
  • the display portion 7402 may be set to a character input mode mainly for inputting characters, and an operation for inputting characters displayed on the screen may be performed. In this case, it is preferable to display a keyboard or number buttons on most of the screen of the display portion 7402.
  • the orientation (portrait or horizontal) of the mobile terminal is determined, and the screen display of the display portion 7402 is automatically displayed. Can be switched automatically.
  • the screen mode is switched by touching the display portion 7402 or operating the operation button 7403 of the housing 7401. Further, switching can be performed depending on the type of image displayed on the display portion 7402. For example, if the image signal to be displayed on the display unit is moving image data, the mode is switched to the display mode.
  • the screen mode is switched from the input mode to the display mode. You may control.
  • the display portion 7402 can function as an image sensor. For example, personal authentication can be performed by touching the display portion 7402 with a palm or a finger and capturing an image of a palm print, a fingerprint, or the like. In addition, if a backlight that emits near-infrared light or a sensing light source that emits near-infrared light is used for the display portion, finger veins, palm veins, and the like can be imaged.
  • the applicable range of the light-emitting device including the light-emitting element described in Embodiment 1 is so wide that the light-emitting device can be applied to electronic devices in various fields.
  • a highly reliable electronic device can be obtained by using the light-emitting element described in Embodiment 1.
  • FIG. 8 illustrates an example of a liquid crystal display device in which the light-emitting element described in Embodiment 1 is applied to a backlight.
  • the liquid crystal display device illustrated in FIG. 8 includes a housing 901, a liquid crystal layer 902, a backlight unit 903, and a housing 904, and the liquid crystal layer 902 is connected to a driver IC 905.
  • the backlight unit 903 uses the light-emitting element described in Embodiment 1 and is supplied with current through a terminal 906.
  • the light-emitting element described in Embodiment 1 By applying the light-emitting element described in Embodiment 1 to a backlight of a liquid crystal display device, a backlight with reduced power consumption can be obtained.
  • a surface-emitting lighting device can be manufactured and the area can be increased. Thereby, the area of the backlight can be increased, and the area of the liquid crystal display device can be increased. Further, since the light-emitting device to which the light-emitting element described in Embodiment 1 is applied can be thinner than the conventional one, the display device can be thinned.
  • FIG. 9 shows an example in which the light-emitting element described in Embodiment 1 is used for a table lamp which is a lighting device.
  • the desk lamp illustrated in FIG. 9 includes a housing 2001 and a light source 2002, and the lighting device described in Embodiment 3 may be used as the light source 2002.
  • FIG. 10 illustrates an example in which the light-emitting element described in Embodiment 1 is used as an indoor lighting device 3001. Since the light-emitting element described in Embodiment 1 has favorable emission efficiency, the lighting device can have low power consumption. Further, since the light-emitting element described in Embodiment 1 has favorable reliability, it can be used as a lighting device with favorable reliability.
  • the light-emitting element described in Embodiment 1 can be mounted on a windshield or a dashboard of an automobile.
  • FIG. 11 illustrates one mode in which the light-emitting element described in Embodiment 1 is used for a windshield or a dashboard of an automobile.
  • Display regions 5000 to 5005 are displays provided using the light-emitting element described in Embodiment 1.
  • the display area 5000 and the display area 5001 are display devices equipped with the light-emitting elements described in Embodiment 1 provided on the windshield of an automobile.
  • the light-emitting element described in Embodiment 1 can be a display device in a so-called see-through state in which a first electrode and a second electrode are formed using a light-transmitting electrode so that opposite sides can be seen through. . If it is a see-through display, it can be installed without obstructing the field of view even if it is installed on the windshield of an automobile. Note that in the case where a transistor for driving or the like is provided, a light-transmitting transistor such as an organic transistor using an organic semiconductor material or a transistor using an oxide semiconductor is preferably used.
  • the display area 5002 is a display device on which the light-emitting element described in Embodiment 1 provided in the pillar portion is mounted.
  • the field of view blocked by the pillar can be complemented by projecting an image from the imaging means provided on the vehicle body.
  • the display area 5003 provided in the dashboard portion compensates for the blind spot by projecting an image from the imaging means provided outside the automobile from the field of view blocked by the vehicle body, thereby improving safety. Can do. By displaying the video so as to complement the invisible part, it is possible to check the safety more naturally and without a sense of incongruity.
  • the display area 5004 and the display area 5005 can provide various other information such as navigation information, speedometer and tachometer, mileage, fuel, gear state, and air conditioner settings.
  • the display items and layout can be appropriately changed according to the user's preference. Note that these pieces of information can also be provided in the display area 5000 to the display area 5003.
  • the display region 5000 to the display region 5005 can be used as a lighting device.
  • FIG. 12A and 12B are examples of tablet terminals that can be folded in half.
  • FIG. 12A illustrates an open state in which the tablet terminal includes a housing 9630, a display portion 9631a, a display portion 9631b, a display mode switching switch 9034, a power switch 9035, a power saving mode switching switch 9036, and a fastener 9033. And an operation switch 9038.
  • the tablet terminal is manufactured using the light-emitting device including the light-emitting element described in Embodiment 1 for one or both of the display portion 9631a and the display portion 9631b.
  • Part of the display portion 9631 a can be a touch panel region 9632 a, and data can be input by touching operation keys 9637 that are displayed.
  • data can be input by touching operation keys 9637 that are displayed.
  • the entire region of the display portion 9631a may have a touch panel function.
  • the entire surface of the display portion 9631a can display keyboard buttons to serve as a touch panel, and the display portion 9631b can be used as a display screen.
  • part of the display portion 9631b can be a touch panel region 9632b.
  • a keyboard button can be displayed on the display portion 9631b by touching a position where the keyboard display switching button 9639 on the touch panel is displayed with a finger, a stylus, or the like.
  • touch input can be performed simultaneously on the touch panel region 9632a and the touch panel region 9632b.
  • the display mode changeover switch 9034 can change the display direction such as vertical display or horizontal display, and can select monochrome display or color display.
  • the power saving mode change-over switch 9036 can optimize the display luminance in accordance with the amount of external light during use detected by an optical sensor built in the tablet terminal.
  • the tablet terminal may include not only an optical sensor but also other detection devices such as a gyroscope, an acceleration sensor, and other sensors that detect inclination.
  • FIG. 12A illustrates an example in which the display areas of the display portion 9631b and the display portion 9631a are the same, but there is no particular limitation, and one size may be different from the other size, and the display quality is also high. May be different.
  • one display panel may be capable of displaying images with higher definition than the other.
  • FIG. 12B shows a closed state, and an example in which the tablet terminal in this embodiment includes a housing 9630, a solar cell 9633, a charge / discharge control circuit 9634, a battery 9635, and a DCDC converter 9636. Note that FIG. 12B illustrates a structure including a battery 9635 and a DCDC converter 9636 as an example of the charge / discharge control circuit 9634.
  • the housing 9630 can be closed when not in use. Accordingly, since the display portion 9631a and the display portion 9631b can be protected, a tablet terminal with excellent durability and high reliability can be provided from the viewpoint of long-term use.
  • the tablet terminal shown in FIGS. 12A and 12B has a function for displaying various information (still images, moving images, text images, etc.), a calendar, a date, or a time.
  • a function for displaying on the display unit, a touch input function for performing touch input operation or editing information displayed on the display unit, a function for controlling processing by various software (programs), and the like can be provided.
  • Power can be supplied to a touch panel, a display unit, a video signal processing unit, or the like by a solar battery 9633 mounted on the surface of the tablet terminal. Note that it is preferable that the solar battery 9633 be provided on one or two surfaces of the housing 9630 because the battery 9635 can be efficiently charged.
  • FIG. 12C illustrates the solar battery 9633, the battery 9635, the DCDC converter 9636, the converter 9638, the switches SW1 to SW3, and the display portion 9631.
  • the battery 9635, the DCDC converter 9636, the converter 9638, and the switches SW1 to SW3 are illustrated. This corresponds to the charge / discharge control circuit 9634 shown in FIG.
  • the power generated by the solar battery is boosted or lowered by the DCDC converter 9636 so as to be a voltage for charging the battery 9635.
  • the switch SW1 is turned on, and the converter 9638 increases or decreases the voltage required for the display portion 9631.
  • the battery 9635 may be charged by turning off SW1 and turning on SW2.
  • the solar cell 9633 is shown as an example of the power generation unit, the power generation unit is not particularly limited, and the battery 9635 is charged by another power generation unit such as a piezoelectric element (piezo element) or a thermoelectric conversion element (Peltier element). The structure which performs this may be sufficient.
  • a non-contact power transmission module that wirelessly (contactlessly) transmits and receives power for charging and a combination of other charging means may be used, and the power generation means may not be provided.
  • the tablet terminal is not limited to the shape illustrated in FIG.
  • FIG. 13A to 13C show a foldable portable information terminal 9310.
  • FIG. 13A illustrates the portable information terminal 9310 in a developed state.
  • FIG. 13B illustrates the portable information terminal 9310 in a state in which the state is changing from one of the developed state or the folded state to the other.
  • FIG. 13C illustrates the portable information terminal 9310 in a folded state.
  • the portable information terminal 9310 is excellent in portability in the folded state and excellent in display listability due to a seamless wide display area in the expanded state.
  • the display panel 9311 is supported by three housings 9315 connected by hinges 9313.
  • the display panel 9311 may be a touch panel (input / output device) equipped with a touch sensor (input device).
  • the display panel 9311 can be reversibly deformed from a developed state to a folded state by bending the two housings 9315 via the hinge 9313.
  • the light-emitting device of one embodiment of the present invention can be used for the display panel 9311.
  • a display region 9312 in the display panel 9311 is a display region located on a side surface of the portable information terminal 9310 in a folded state. In the display area 9312, information icons, frequently used applications, program shortcuts, and the like can be displayed, so that information can be confirmed and applications can be activated smoothly.
  • Electron injection layer 114 DESCRIPTION OF SYMBOLS 1 Electron transport layer 114-2 Electron transport layer 115-1 Electron injection layer 115-2 Electron injection layer 400 Substrate 401 1st electrode 403 EL layer 404 2nd electrode 405 Seal material 406 Seal material 407 Sealing substrate 412 Pad 420 IC chip 511 1st light emission unit 512 2nd light emission unit 513 Charge generation layer 601 Drive circuit part (source line drive circuit) 602 Pixel portion 603 Drive circuit portion (gate line drive circuit) 604 Sealing substrate 605 Sealing material 607 Space 608 Wiring 609 FPC (flexible printed circuit) 610 Element substrate 611 FET for switching 612 FET for current control 613 First electrode 614 Insulator 616 EL layer 617 Second electrode 618 Light emitting element 901

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un nouvel élément électroluminescent, un élément électroluminescent présentant une bonne durée de vie, ou un élément électroluminescent présentant une bonne efficacité électroluminescente. La présente invention concerne un élément électroluminescent qui comporte une première électrode, une seconde électrode, et une couche qui comprend un composé organique et qui est positionnée entre la première électrode et la seconde électrode. La couche comprenant le composé organique comporte une première unité électroluminescente et une seconde unité électroluminescente et comporte une couche intermédiaire entre la première unité électroluminescente et la seconde unité électroluminescente, la couche intermédiaire comportant une couche de production de charge électrique. La première unité électroluminescente comporte une première couche électroluminescente ; la seconde unité électroluminescente comporte une seconde couche électroluminescente ; la première couche électroluminescente comporte un premier matériau électroluminescent ; la seconde couche électroluminescente comporte un second matériau électroluminescent ; le premier matériau électroluminescent consiste en un matériau électroluminescent phosphorescent ; et le second matériau électroluminescent est un point quantique.
PCT/IB2016/054494 2015-08-07 2016-07-28 Élément électroluminescent, appareil électroluminescent, dispositif électronique, appareil d'affichage, et appareil d'éclairage Ceased WO2017025843A1 (fr)

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JP2015156977 2015-08-07

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