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WO2017005912A3 - Method for controlling a beam guiding device, and beam guiding device - Google Patents

Method for controlling a beam guiding device, and beam guiding device Download PDF

Info

Publication number
WO2017005912A3
WO2017005912A3 PCT/EP2016/066310 EP2016066310W WO2017005912A3 WO 2017005912 A3 WO2017005912 A3 WO 2017005912A3 EP 2016066310 W EP2016066310 W EP 2016066310W WO 2017005912 A3 WO2017005912 A3 WO 2017005912A3
Authority
WO
WIPO (PCT)
Prior art keywords
guiding device
beam guiding
controlling
different
emitted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2016/066310
Other languages
German (de)
French (fr)
Other versions
WO2017005912A2 (en
Inventor
Michael Patra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to CN201680051162.5A priority Critical patent/CN107924143B/en
Priority to KR1020187003787A priority patent/KR102700274B1/en
Publication of WO2017005912A2 publication Critical patent/WO2017005912A2/en
Publication of WO2017005912A3 publication Critical patent/WO2017005912A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laser Surgery Devices (AREA)
  • Apparatus For Radiation Diagnosis (AREA)

Abstract

Illumination radiation (5) emitted by different radiation sources (4i) can be guided towards different scanners (3i) by means of a beam guiding device (28).
PCT/EP2016/066310 2015-07-09 2016-07-08 Method for controlling a beam guiding device, and beam guiding device Ceased WO2017005912A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201680051162.5A CN107924143B (en) 2015-07-09 2016-07-08 Method and beam guide for controlling a beam guide
KR1020187003787A KR102700274B1 (en) 2015-07-09 2016-07-08 Method for controlling a beam guiding device and beam guiding device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015212878.4 2015-07-09
DE102015212878.4A DE102015212878A1 (en) 2015-07-09 2015-07-09 Beam control device

Publications (2)

Publication Number Publication Date
WO2017005912A2 WO2017005912A2 (en) 2017-01-12
WO2017005912A3 true WO2017005912A3 (en) 2017-03-02

Family

ID=56550191

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2016/066310 Ceased WO2017005912A2 (en) 2015-07-09 2016-07-08 Method for controlling a beam guiding device, and beam guiding device

Country Status (4)

Country Link
KR (1) KR102700274B1 (en)
CN (1) CN107924143B (en)
DE (1) DE102015212878A1 (en)
WO (1) WO2017005912A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3502339A1 (en) * 1984-01-24 1985-08-14 Canon K.K., Tokio/Tokyo Exposure device
US4788698A (en) * 1984-04-15 1988-11-29 Hitachi, Ltd. X-ray exposure system
US6229639B1 (en) * 1998-07-09 2001-05-08 Cymer, Inc. Multiplexer for laser lithography

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4653903A (en) * 1984-01-24 1987-03-31 Canon Kabushiki Kaisha Exposure apparatus
US5091744A (en) * 1984-02-13 1992-02-25 Canon Kabushiki Kaisha Illumination optical system
US4820899A (en) * 1987-03-03 1989-04-11 Nikon Corporation Laser beam working system
JP2611682B2 (en) * 1995-02-10 1997-05-21 株式会社ニコン Semiconductor manufacturing equipment
EP0955641B1 (en) 1998-05-05 2004-04-28 Carl Zeiss Illumination system,particularly for deep ultraviolet lithography
DE19935404A1 (en) 1999-07-30 2001-02-01 Zeiss Carl Fa Lighting system with multiple light sources
JP3810039B2 (en) * 1998-05-06 2006-08-16 キヤノン株式会社 Stage equipment
JP2000260684A (en) * 1999-03-08 2000-09-22 Nikon Corp Exposure device and illumination device
SG139554A1 (en) * 2002-12-20 2008-02-29 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP4195434B2 (en) * 2003-10-31 2008-12-10 エーエスエムエル ネザーランズ ビー．ブイ． Lithographic apparatus and device manufacturing method
DE10358225B3 (en) 2003-12-12 2005-06-30 Forschungszentrum Karlsruhe Gmbh Undulator and method for its operation
US20070165782A1 (en) * 2004-02-12 2007-07-19 Tetsuya Makimura Soft x-ray processing device and soft x-ray processing method
DE102004013886A1 (en) * 2004-03-16 2005-10-06 Carl Zeiss Smt Ag Multiple Exposure Method, Microlithography Projection Exposure System and Projection System
US20070152171A1 (en) 2005-12-30 2007-07-05 Michael Goldstein Free electron laser
CN1858651A (en) * 2006-06-02 2006-11-08 上海微电子装备有限公司 Exposure device
US7697115B2 (en) * 2006-06-23 2010-04-13 Asml Holding N.V. Resonant scanning mirror
DE102006059024A1 (en) * 2006-12-14 2008-06-19 Carl Zeiss Smt Ag Projection exposure equipment for microlithography, has illuminating optical unit for illuminating object field in object plane and correction screen is arranged in or adjacent to aperture diaphragm plane of projection optical unit
NL1036323A1 (en) * 2007-12-27 2009-06-30 Asml Holding Nv Folded optical encoder and applications for same.
CN101946190B (en) 2008-02-15 2013-06-19 卡尔蔡司Smt有限责任公司 Facet mirrors used in projection exposure equipment for microlithography
DE102012210071A1 (en) * 2012-06-15 2013-12-19 Carl Zeiss Smt Gmbh Projection exposure apparatus and method for controlling a projection exposure apparatus
DE102013204443A1 (en) * 2013-03-14 2014-10-02 Carl Zeiss Smt Gmbh Optical assembly for increasing the light conductance
DE102013211830A1 (en) 2013-06-21 2014-06-12 Carl Zeiss Smt Gmbh Extreme UV lithography system used for performing miniaturization of e.g. semiconductor wafers, has electron switch that is arranged between accelerator unit and undulator unit, for directing electron beam alternately to undulators
DE102013223935A1 (en) 2013-11-22 2015-05-28 Carl Zeiss Smt Gmbh Illumination system for EUV exposure lithography

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3502339A1 (en) * 1984-01-24 1985-08-14 Canon K.K., Tokio/Tokyo Exposure device
US4788698A (en) * 1984-04-15 1988-11-29 Hitachi, Ltd. X-ray exposure system
US6229639B1 (en) * 1998-07-09 2001-05-08 Cymer, Inc. Multiplexer for laser lithography

Also Published As

Publication number Publication date
KR20180028487A (en) 2018-03-16
CN107924143A (en) 2018-04-17
CN107924143B (en) 2021-04-23
KR102700274B1 (en) 2024-08-29
WO2017005912A2 (en) 2017-01-12
DE102015212878A1 (en) 2017-01-12

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