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WO2017005709A1 - Optique de représentation pour représenter un champ d'objet dans un champ d'image et système d'éclairage par projection pourvu d'une optique de représentation de ce type - Google Patents

Optique de représentation pour représenter un champ d'objet dans un champ d'image et système d'éclairage par projection pourvu d'une optique de représentation de ce type Download PDF

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Publication number
WO2017005709A1
WO2017005709A1 PCT/EP2016/065751 EP2016065751W WO2017005709A1 WO 2017005709 A1 WO2017005709 A1 WO 2017005709A1 EP 2016065751 W EP2016065751 W EP 2016065751W WO 2017005709 A1 WO2017005709 A1 WO 2017005709A1
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WO
WIPO (PCT)
Prior art keywords
field
edge contour
image
imaging
rin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2016/065751
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German (de)
English (en)
Inventor
Markus Schwab
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of WO2017005709A1 publication Critical patent/WO2017005709A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems

Definitions

  • a deviation between the field edge contour radius ratio on the one hand and the imaging scale on the other hand leads to the possibility of creating designs of imaging optics with improved imaging quality.
  • this makes it possible to achieve a targeted manipulation of the imaging properties of the imaging optics by way of field tilting, which can be achieved by means of a corresponding tilt actuator of the object to be imaged and / or of the substrate to which images are to be imaged.
  • the relative position of a focal plane relative to the object to be imaged and / or relative to the substrate to be imaged may be manipulated. It is therefore possible to adjust a defocus position via such a tilt actuator.
  • the deviation of the ratio of the field Rim contour radii of the scale of magnification reach a situation in which such a tilting manipulation has a field-dependent influence on the imaging property to be set or the imaging parameter to be set perpendicular to the scanning direction.
  • a quadratic dependence of a focal position on the object side, ie a defocus curve, of a field coordinate transverse to the scan direction and imagewise dependence of the defocus curve on the same field coordinate with another power, for example a dependence on the fourth power can be specified.
  • an imaging optics with a curved or curved object field on the one hand and a rectangular image field on the other hand can be created.
  • the ratio of the object field edge contour radius and the edge field contour radius on the one hand differs by more than 10% from the imaging scale of the imaging optics. This deviation can be 15%, but can also be significantly greater, for example 50%, 100%, 200%, 1000% or even greater. This deviation generally results from the fact that the image field does not emerge from the object field by projection with the respective imaging scale bars, which can be different in the x and y directions.
  • FIG. 1 shows schematically a projection exposure apparatus for EUV microlithography
  • a view of the imaging optics of Figure 4 seen from the direction V in Fig. 4. in a representation similar to FIG. 4, a further embodiment of an imaging optical system which can be used as a projection objective in the projection exposure apparatus according to FIG. 1; a view of the imaging optics of Figure 6, seen from the viewing direction VII in Fig. 6. in a representation similar to FIG. 4, a further embodiment of an imaging optical system which can be used as a projection objective in the projection exposure apparatus according to FIG. 1; a view of the imaging optics of Figure 8, seen from the direction IX in Fig. 8.
  • the projection optics 7 one of the 4ff. illustrated embodiments are used.
  • the projection optical unit 7 according to FIG. 4 reduces by a factor of 8.
  • Other reduction scales are also possible, for example 4x, 5x or even reduction scales which are larger than 8x.
  • An embodiment of the projection optics 7 with different sized reduction scales on the one hand in the xz plane and on the other hand in the yz plane is possible.
  • the reduction scale in the yz plane may be twice as large, for example 8x, as in the xz plane, for example 4x.
  • Other ratios between the reduction scale in the yz plane and the reduction scale in the xz plane are also possible.
  • the leading object field edge contour section 4IN has an object field edge contour radius RIN.
  • the following object field edge contour section 4 ⁇ has an object field edge contour radius ROUT.
  • RIN ROUT applies in each case. This also applies to the image field 8.
  • the field shape shown in FIG. 2 is schematic and is subsequently also used to describe the image field 8.
  • the object field 4 with respect to its edge contour is not geometrically similar to the image field 8.
  • the edge contour of the object field 4 is thus not simply transferred through an image with the imaging scale of the projection optics 7 into the edge contour of the image field 8.
  • the image field 8 has an edge contour with transverse to the image scanning direction y both a leading edge field contour section 8 I N and a subsequent frame border contour section 8 ⁇ .
  • the image field edge contour section 8 I N is used to enter an image region of the substrate or wafer 11 which is displaceable in the image scanning direction into the image field 8.
  • the edge contour radius RIN or ROUT results as a radius of a pitch circle, which is the best possible approximated to the actual field edge contour section.
  • the field edge contour sections 4IN, 4 ⁇ , 8IN, 8 ⁇ can be part-circular; but this is not mandatory.
  • the respective edge contour portion is perpendicular to the scan direction y. This is the case, for example, in the case of a rectangular object field 4 or image field 8.
  • the leading object field edge contour section 4IN and the object field boundary contour section 4Out represent the long sides of the object field 4 which run along the longer object field dimension x.
  • the two other object field edge contours extending along the shorter object field dimension y run straight parallel to the y direction.
  • a field dimension in the x-direction is designated in FIG. 2 by xo.
  • a field dimension in the y direction is denoted by yo. Due to the field curvature, a y-position of the field edge contour is x-dependent. For this variation of the y-position Ay of the edge contour applies depending on the respective field edge contour radius
  • the object plane 5 is tilted to the image plane 9 about the x-axis by an angle of about 3.8 °.
  • the projection optics 7 has a picture-side numerical aperture of 0.5.
  • An entrance pupil EP is arranged in the beam path of the imaging light 3 after the object field 4.
  • the result is a convergent course of the main rays 16 between the object field 4 and the mirror Ml.
  • the projection optics 7 according to FIG. 4 has a total of eight mirrors, which are numbered consecutively in the order of the beam path of the individual beams 15, starting from the object field 4, with Ml to M8.
  • the projection optics 7 is a purely catoptric optics.
  • the imaging optics 7 can also have a different number of mirrors, for example four mirrors, six mirrors or ten mirrors. Shown in FIG. 4 are the calculated reflection surfaces of the mirrors M1 to M8. Is used, as can be seen in the illustration of FIG. 4, only a portion of these calculated reflection surfaces. Only this actually used area of the reflection surfaces is included the real mirrors M1 to M8 actually exist. This useful reflection surfaces are supported in a known manner by mirror bodies, not shown.
  • all the mirrors M1 to M8 are designed as mirrors for normal incidence, ie as mirrors to which the imaging light 3 strikes with an angle of incidence which is smaller than 45 °. These mirrors are also referred to below as NI mirrors.
  • the projection optics 7 according to FIG. 4 has no mirror for grazing incidence, that is to say no GI (gracing incidence) mirror onto which the illumination light 3 occurs with angles of incidence which are greater than 45 ° and, in particular, greater than 60 °.
  • the mirrors M1 to M8 carry a coating which optimizes the reflectivity of the mirrors M1 to M8 for the imaging light 3.
  • This may be a ruthenium coating, a molybdenum coating or a molybdenum coating having a topmost layer of ruthenium.
  • the highly reflective layers may be designed as multilayer layers, wherein successive layers may be made of different materials. Alternate layers of material can also be used.
  • a typical multi-layer layer may comprise fifty bilayers each of one layer of molybdenum and one layer of silicon.
  • the mirror M8 that is, the last mirror in the imaging beam path in front of the image field 8, has a passage opening 17 for the passage of the imaging light 3, which is reflected by the third last mirror M6 toward the penultimate mirror M7.
  • the mirror M8 is around the passage opening 17 used reflectively. All other mirrors M1 to M7 have no passage opening and are used in a coherently coherent area reflective.
  • the mirrors M1 to M8 are designed as freeform surfaces which can not be described by a rotationally symmetrical function.
  • Other embodiments of the projection optics 7 are possible in which at least one of the mirrors M1 to M8 is designed as a rotationally symmetric asphere. All mirrors M1 to M8 can also be designed as such aspheres.
  • a free-form surface can be described by the following free-form surface equation (Equation 1):
  • the first of these tables gives an overview of the design data of the projection optics 7 and together summarizes the numerical aperture NA, the calculated design wavelength for the imaging light, the decreasing magnifications ⁇ x , ⁇ y in the x- and y-directions, the magnitudes of the Image field in x- and y-direction, the field curvature, the object field curvature, an aberration value rms, given in mk (ml), ie depending on the design wavelength, as well as an aperture location.
  • the negative sign of the respective magnification ⁇ x , ⁇ y stands for an image flip in the imaging of the projection optics 7.
  • the field curvature is defined as the inverse radius of curvature of the respective field.
  • Negative radii values mean, for the incident illuminating light 3, concave curves in the section of the respective surface with the considered plane (xz, yz) spanned by a surface normal at the vertex with the respective curvature direction (x, y).
  • the two radii radius x, radius y can explicitly have different signs.
  • the powers Power x (P x ), Power y (P y ) at the vertices are defined as: 2 cos AOI AOI here denotes an angle of incidence of the guide beam to the surface normal.
  • the sixth table indicates a boundary of the diaphragm AS as a polygon in local coordinates xyz.
  • the aperture is still decentered and tilted as described above.
  • a boundary of a diaphragm surface of the diaphragm AS results from puncture points at the diaphragm surface of all the beams of the illumination light 3 which propagate on the image side at the field center point with a full image-side telecentric aperture in the direction of the diaphragm surface.
  • the boundary is an inner boundary.
  • Obskurationsbrende it is at the boundary to an outer boundary.
  • Mirrors M3, M6 and M8 have negative radii, so they are basically concave mirrors.
  • Mirrors M5 and M7 have positive radii, which are basically convex mirrors.
  • the mirrors M1, M2 and M4 have different signs with regard to their x and y radius values, and thus have a basic saddle surface shape.
  • the field curvature is absolutely exactly eight times the curvature of the object field.
  • an image field would result which would have an exactly reversed curvature to the object field, ie an image field with convex leading image field edge contour section 8 I N and concave following image field.
  • Edge contour section 8 ⁇ The curvature of the field of view in the case of the projection optical system 7 according to FIG. 4 therefore does not occur via the imaging scale or the reduction scale from the curvature of the object field.
  • a ratio of the object field edge contour radius RIN, OUT 4 and the frame edge contour radius RIN, OUT is correct with the magnification
  • both the object field edge contour radius RIN, OUT 4 and the frame edge contour radius RIN, OUT 8 are finite.
  • the field curvature has the same sign as the curvature of the object field.
  • FIG. 6 A further embodiment of a projection optical system 21 will be explained below with reference to FIG. 6, which can be used instead of the projection optical system 7 in the projection exposure apparatus 1 according to FIG. 1.
  • the mirrors M1 to M8 are again designed as free-form surface mirrors, for which the free-form surface equation (1) given above applies.
  • the optical design data of the projection optics 21 can be found in the following tables, which correspond in their structure to the tables for projection optics 7 according to FIG. 4. Embodiment FIG. 6
  • a total reflectivity of the projection optics 21 is 3.5%.
  • the projection optics 21 has a picture-side numerical aperture of 0.5.
  • the image field 8 has an x-extension of twice 13.0 mm and a y-extension of 1 mm.
  • the projection optics 21 is optimized for an operating wavelength of the illumination light 3 of 13.5 nm.
  • the projection optical system 21 has a rectangular object field 4 and a curved, ie curved image field 8. Unlike the embodiment described above according to FIGS. 4 and 5, in the projection optical system 21, a ratio of the object field edge contour radius and the image field edge contour radius is not achieved the magnification of the projection optics 21 given.
  • the object field edge contour radius RIN, OUT 4 results in the projection optics 21 as reciprocal from the object field curvature.
  • the same applies to the image field edge contour radius RIN, OUT 8 which results as the reciprocal from the field curvature.
  • the object field edge contour radius RIN, OUT 4 is infinite.
  • the frame boundary contour radius RIN, OUT 8 is finite. A ratio of these two edge contour radii is infinite, due to the fact that in the projection optics 21, the object field 4 is rectangular.
  • FIGS. 6/7 in FIG. 3 show possible imaging situations with regard to imaged object and image areas RA, WA when the projection optics 21 are used.
  • the left of these two columns, which are assigned to FIGS. 6/7 in FIG. 3, shows the situation in which the object area is rectangular and the image area is bent in accordance with the field curvature.
  • a reticle structure which runs parallel to the x-direction is imaged into a curved image structure corresponding to the curvature of the field of view of the projection optics 21.
  • a curved object area RA is shown, wherein the curvature of this object area RA is such that this curved object area RA is imaged by the projection optics 21 in a rectangular image area WA.
  • reticle structures 22 are provided on the reticle 10, which are aligned transversely to the object scanning direction y along curved paths, as indicated in Fig. 3 by a dashed line, these reticle structures 22 in straight and perpendicular to the image scanning direction y extending image - or wafer structures 23 shown.
  • FIG. 7 is again a sagittal view of the projection optics 21.
  • FIG. 8 a further embodiment of a projection optical system 25 is explained below, which can be used instead of the projection optics 7 in the projection exposure apparatus 1 according to FIG.
  • Components and functions which have already been explained above in connection with FIGS. 1 to 7 may carry the same reference numbers and will not be discussed again in detail.
  • the mirrors M1 to M8 are in turn designed as free-form surfaces for which the free-form surface equation (1) given above applies.
  • the optical design data of the projection optics 25 can be taken from the following tables, which in their construction correspond to the tables for the projection optics 7 according to FIG. 4.
  • a total reflectivity of the projection optics 25 is 3.5%.
  • the image field 8 has an x-extension of twice 13.0 mm and a y-extension of 1.0 mm.
  • the projection optics 25 is optimized for an operating wavelength of the illumination light 3 of 13.5 nm.
  • both the object field 4 and the image field 8 are curved.
  • the signs of the field curvature on the one hand and the curvature of the object field on the other hand differ. Accordingly, it also applies here that a ratio of object field edge contour and image field edge contour does not result from the reproduction scale of the projection optics 25.
  • FIG. 3 Schematically, the imaging conditions in the projection optics 25 in the right column of Fig. 3 are indicated.
  • an exposed object field region RA is shown, which has such a curvature allowance that it is imaged with the projection optics 25 in a rectangular image region WA.
  • reticle structures 22 can be used for the projection optics 25, which are lined up transversely to the object scanning direction y along curved paths, as already explained above with reference to the projection optics 21.
  • wafer structures 23 which are straight and perpendicular to the image scanning direction y then result.
  • FIG. 9 shows a sagittal view of the projection optics 25.
  • a further embodiment of a projection optics 26 will be explained below with reference to FIG. 10, which may be used instead of the projection optics 7 in the projection exposure apparatus 1 according to FIG.
  • the mirrors M1 to M8 are in turn designed as free-form surfaces, for which the free-form surface equation (1) given above applies.
  • the optical design data of the projection optics 26 can be NEN the following tables are taken, which correspond in their structure to the tables jetechnischsoptik 7 of FIG. 4.
  • a total reflectivity of the projection optics 26 is 3.5%.
  • the image field 8 has an x-extension of twice 13 mm and a y-extension of 1 mm.
  • the projection optics 26 is optimized for an operating wavelength of the illumination light 3 of 13.5 nm.
  • the projection optics 26 has a rectangular image field. Accordingly, the field curvature of the projection optics 26 is zero.
  • the projection optics 26 have a curved object field 4.
  • a relationship between the object field edge contour radius RIN, OUT 4 and the frame edge contour radius RIN, OUT 8 does not arise from the magnification of the projection optics 26.
  • the imaging ratios are schematically included the projection optics 26 in the penultimate column of Fig. 3 indicated.
  • the case is shown in which a curved object region RA is exposed in a scan-integrated manner, the curvature of which is so reserved that a rectangular image region WA results during imaging by the projection optics 26.
  • FIG. 11 shows a sagittal view of the projection optics 26.
  • the mirrors M1 to M8 are in turn designed as free-form surfaces for which the free-form surface equation (1) given above applies.
  • the optical design data of the projection optics 27 can be found in the following tables, whose construction corresponds to the tables for the projection optics 7 according to FIG. 4.
  • the image field 8 has an x-extension of 2 ⁇ 13 mm and a y-extension of 1 mm.
  • the projection optics 27 is optimized for an operating wavelength of the illumination light 3 of 13.5 nm.
  • the projection optics 27 has a curved object field 4 and a curved image field 8.
  • the field curvatures correspond to those of the embodiment of the projection optics 7 with the difference that the projection optics 7 have negative field curvatures.
  • the fields 4 and 8 are both in each case not upwards but curved downwards in comparison to the case design according to the second column in FIG.
  • the ratio of the field edge contours due to the different sign does not result from the magnification of the projection optics 27, as already explained above in connection with the projection optics 7.
  • FIG. 13 shows a sagittal view of the projection optics 27.
  • the projection optics 21 and 25 to 27 differ from the projection optics 7, inter alia, in the sign sequence of the power Power y (P y ). These deviations in the sign sequence of the refractive power P y occur only for the first five mirrors Ml to M5 and cause the projection optics 21 and 25 to 27 to a correspondingly different assignment of these leading mirror Ml to M5 to the types "convex "," Concave “or” saddle surface type "leads.
  • a field-dependent manipulation of an object-field-side or image-field-side focal position can take place with the aid of the tilting actuators 10c or 12b. It is thus possible to correct a defocus field-dependent, that is dependent on the x-field coordinate. Depending on the field shape, a course of the focal dependence can be achieved, which has a given nonlinear dependence on the field height dimension x. If these field height dependencies are different for the object field on the one hand and for the image field on the other hand, there is the possibility of a field-dependent defocus correction.
  • the projection exposure apparatus 1 is used as follows: First, the reflection mask 10 or the reticle and the substrate or the wafer 11 are provided. Subsequently, a structure on the reticle 10 is projected onto a photosensitive layer of the wafer 11 by means of the projection exposure apparatus 1. By developing the photosensitive layer, a microstructure or nanostructure is then produced on the wafer 11 and thus the microstructured component.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne une optique de représentation pour la lithographie par projection, comportant une pluralité de composants optiques de représentation. Un champ d'objet (4) a un contour de bord. Celui-ci présente, transversalement à une direction de balayage d'objet (y), une partie de contour de bord avant (4IN) de champ d'objet et une partie de contour de bord arrière (4OUT) de champ d'objet. De manière correspondante, le champ d'image (8) a également une partie de contour de bord avant (8IN) de champ d'image et une partie de contour de bord arrière (8OUT) de champ d'image. Dans une première variante, un rayon de contour de bord (RIN 4) de champ d'objet est fini et un rapport (RIN 4/RIN 8) du rayon de contour de bord (RIN 4) de champ d'objet sur le rayon de contour de bord (RIN 8) de champ d'image diverge de plus de 10 % d'une échelle de représentation. Dans une deuxième variante, le rayon de contour de bord (RIN 4) de champ d'objet est infini et le rayon de contour de bord (RIN 8) de champ d'image est fini. On obtient ainsi une optique de représentation présentant une qualité de représentation améliorée.
PCT/EP2016/065751 2015-07-06 2016-07-05 Optique de représentation pour représenter un champ d'objet dans un champ d'image et système d'éclairage par projection pourvu d'une optique de représentation de ce type Ceased WO2017005709A1 (fr)

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DE102015212619.6 2015-07-06
DE102015212619.6A DE102015212619A1 (de) 2015-07-06 2015-07-06 Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10795168B2 (en) 2017-08-31 2020-10-06 Metalenz, Inc. Transmissive metasurface lens integration
US11906698B2 (en) 2017-05-24 2024-02-20 The Trustees Of Columbia University In The City Of New York Broadband achromatic flat optical components by dispersion-engineered dielectric metasurfaces
US11927769B2 (en) 2022-03-31 2024-03-12 Metalenz, Inc. Polarization sorting metasurface microlens array device
US11978752B2 (en) 2019-07-26 2024-05-07 Metalenz, Inc. Aperture-metasurface and hybrid refractive-metasurface imaging systems
US12140778B2 (en) 2018-07-02 2024-11-12 Metalenz, Inc. Metasurfaces for laser speckle reduction
US12416752B2 (en) 2018-01-24 2025-09-16 President And Fellows Of Harvard College Polarization state generation with a metasurface
US12460919B2 (en) 2019-10-31 2025-11-04 President And Fellows Of Harvard College Compact metalens depth sensors

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4964706A (en) 1988-10-17 1990-10-23 Hughes Aircraft Company Multi-focal length, multi-field of view three mirror anastrigmat
DE10155711A1 (de) 2001-11-09 2003-05-22 Fraunhofer Ges Forschung Spiegel für den EUV-Spektralbereich
US20050206867A1 (en) * 2002-06-28 2005-09-22 Canon Kabushiki Kaisha Scanning exposure apparatus and method
US20070058269A1 (en) 2005-09-13 2007-03-15 Carl Zeiss Smt Ag Catoptric objectives and systems using catoptric objectives
US20090153821A1 (en) * 2007-12-17 2009-06-18 Asml Netherlands B.V. Lithographic apparatus with adjusted exposure slit shape enabling reduction of focus errors due to substrate topology and device manufacturing method
US20100149509A1 (en) 2008-09-18 2010-06-17 Nikon Corporation Optical system, exposure apparatus, and method of manufacturing electronic device
WO2012126867A1 (fr) 2011-03-22 2012-09-27 Carl Zeiss Smt Gmbh Miroir de déviation et appareil d'exposition par projection pour microlithographie comprenant ce miroir de déviation
DE102012212753A1 (de) 2012-07-20 2014-01-23 Carl Zeiss Smt Gmbh Projektionsoptik
US20150074620A1 (en) * 2013-09-11 2015-03-12 United Microelectronics Corp. Method of making photomask layout and method of forming photomask including the photomask layout

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003506881A (ja) * 1999-07-30 2003-02-18 カール ツァイス シュティフトゥング トレイディング アズ カール ツァイス Ｅｕｖ照明光学系の射出瞳における照明分布の制御
US6523467B2 (en) * 1999-12-17 2003-02-25 Heidelberger Druckmaschinen Aktiengesellschaft Method for measuring engraving cups
US8212988B2 (en) * 2004-08-06 2012-07-03 Carl Zeiss GmbH Projection objective for microlithography

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4964706A (en) 1988-10-17 1990-10-23 Hughes Aircraft Company Multi-focal length, multi-field of view three mirror anastrigmat
DE10155711A1 (de) 2001-11-09 2003-05-22 Fraunhofer Ges Forschung Spiegel für den EUV-Spektralbereich
US20050206867A1 (en) * 2002-06-28 2005-09-22 Canon Kabushiki Kaisha Scanning exposure apparatus and method
US20070058269A1 (en) 2005-09-13 2007-03-15 Carl Zeiss Smt Ag Catoptric objectives and systems using catoptric objectives
US20090153821A1 (en) * 2007-12-17 2009-06-18 Asml Netherlands B.V. Lithographic apparatus with adjusted exposure slit shape enabling reduction of focus errors due to substrate topology and device manufacturing method
US20100149509A1 (en) 2008-09-18 2010-06-17 Nikon Corporation Optical system, exposure apparatus, and method of manufacturing electronic device
WO2012126867A1 (fr) 2011-03-22 2012-09-27 Carl Zeiss Smt Gmbh Miroir de déviation et appareil d'exposition par projection pour microlithographie comprenant ce miroir de déviation
DE102012212753A1 (de) 2012-07-20 2014-01-23 Carl Zeiss Smt Gmbh Projektionsoptik
US20150074620A1 (en) * 2013-09-11 2015-03-12 United Microelectronics Corp. Method of making photomask layout and method of forming photomask including the photomask layout

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11906698B2 (en) 2017-05-24 2024-02-20 The Trustees Of Columbia University In The City Of New York Broadband achromatic flat optical components by dispersion-engineered dielectric metasurfaces
US10795168B2 (en) 2017-08-31 2020-10-06 Metalenz, Inc. Transmissive metasurface lens integration
US11579456B2 (en) 2017-08-31 2023-02-14 Metalenz, Inc. Transmissive metasurface lens integration
US11988844B2 (en) 2017-08-31 2024-05-21 Metalenz, Inc. Transmissive metasurface lens integration
US12411348B2 (en) 2017-08-31 2025-09-09 Metalenz, Inc. Transmissive metasurface lens integration
US12416752B2 (en) 2018-01-24 2025-09-16 President And Fellows Of Harvard College Polarization state generation with a metasurface
US12140778B2 (en) 2018-07-02 2024-11-12 Metalenz, Inc. Metasurfaces for laser speckle reduction
US11978752B2 (en) 2019-07-26 2024-05-07 Metalenz, Inc. Aperture-metasurface and hybrid refractive-metasurface imaging systems
US12389700B2 (en) 2019-07-26 2025-08-12 Metalenz, Inc. Aperture-metasurface and hybrid refractive-metasurface imaging systems
US12460919B2 (en) 2019-10-31 2025-11-04 President And Fellows Of Harvard College Compact metalens depth sensors
US11927769B2 (en) 2022-03-31 2024-03-12 Metalenz, Inc. Polarization sorting metasurface microlens array device
US12276807B2 (en) 2022-03-31 2025-04-15 Metalenz, Inc. Polarization sorting metasurface microlens array device

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