WO2017077871A1 - Magnetic sensor - Google Patents
Magnetic sensor Download PDFInfo
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- WO2017077871A1 WO2017077871A1 PCT/JP2016/081104 JP2016081104W WO2017077871A1 WO 2017077871 A1 WO2017077871 A1 WO 2017077871A1 JP 2016081104 W JP2016081104 W JP 2016081104W WO 2017077871 A1 WO2017077871 A1 WO 2017077871A1
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- magnetic
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- sensor chip
- magnetic body
- detection element
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H36/00—Switches actuated by change of magnetic field or of electric field, e.g. by change of relative position of magnet and switch, by shielding
Definitions
- the present invention relates to a magnetic sensor, and more particularly to a magnetic sensor provided with a magnetic body for collecting magnetic flux on a sensor chip.
- Magnetic sensors using giant magnetoresistive elements are widely used in ammeters and magnetic encoders.
- the magnetic sensor may be provided with a magnetic body for collecting magnetic flux on the sensor chip.
- the magnetic body is placed on the element formation surface of the sensor chip (see Patent Document 1).
- the sensor chip is generally small, it is not easy to place the magnetic body on the sensor chip, and it is difficult to securely fix the sensor chip and the magnetic body.
- the overall height of the magnetic sensor increases, making it difficult to reduce the height.
- an object of the present invention is to provide a magnetic sensor capable of more securely fixing a sensor chip and a magnetic body and realizing a low profile.
- the magnetic sensor according to the present invention includes an element formation surface on which at least one magnetic detection element is formed, a sensor chip having a side surface substantially perpendicular to the element formation surface, and a first provided on the side surface of the sensor chip. And a magnetic body.
- the contact area between the sensor chip and the magnetic body can be increased. For this reason, both can be fixed more reliably. Moreover, it is possible to realize a low profile.
- the magnetic sensor according to the present invention preferably further includes a second magnetic body provided on the element forming surface of the sensor chip and in the vicinity of the side surface. According to this, since the magnetic flux in the vertical direction with respect to the element formation surface can be further bent in the horizontal direction, the detection sensitivity can be increased.
- the magnetic detection element includes first and second magnetic detection elements, and the first and second magnetic detection elements have different distances from the side surface. According to this, magnetic detection can be performed using the output difference between the first magnetic detection element and the second magnetic detection element.
- the magnetic detection element includes a third magnetic detection element having a distance from the side surface equal to that of the first magnetic detection element, and a fourth distance from the side surface being equal to that of the second magnetic detection element. It is preferable to further include a magnetic detection element. According to this, it is possible to form a differential bridge circuit using the first to fourth magnetic detection elements, and in this case, it is possible to perform magnetic detection with higher sensitivity.
- the magnetic sensor according to the present invention preferably further comprises a circuit board having a mounting surface on which the sensor chip is mounted.
- the element formation surface of the sensor chip may be substantially parallel to the mounting surface of the circuit board, or may be substantially perpendicular to the mounting surface of the circuit board.
- the present invention it is possible to more securely fix the sensor chip and the magnetic body, and it is possible to reduce the height of the magnetic sensor.
- FIG. 1 is a schematic perspective view showing an appearance of a magnetic sensor 10A according to a preferred first embodiment of the present invention.
- FIG. 2 is a circuit diagram of a magnetic field detection apparatus using the magnetic sensor 10A.
- FIG. 3 is a schematic perspective view showing the appearance of a magnetic sensor 10B according to a preferred second embodiment of the present invention.
- FIG. 4 is a diagram illustrating an example in which the first magnetic body 41 and the second magnetic body 42 are integrated.
- FIG. 5 is a schematic perspective view showing the appearance of a magnetic sensor 10C according to a preferred third embodiment of the present invention.
- FIG. 6 is a schematic perspective view showing the appearance of a magnetic sensor 10D according to a preferred fourth embodiment of the present invention.
- FIG. 1 is a schematic perspective view showing an appearance of a magnetic sensor 10A according to a preferred first embodiment of the present invention.
- FIG. 2 is a circuit diagram of a magnetic field detection apparatus using the magnetic sensor 10A.
- FIG. 3 is a schematic perspective view showing the appearance
- FIG. 7 is a schematic perspective view showing the appearance of a magnetic sensor 10E according to a preferred fifth embodiment of the present invention.
- FIG. 8 is a circuit diagram of a magnetic field detection apparatus using the magnetic sensor 10E.
- FIG. 9 is a schematic perspective view showing the appearance of a magnetic sensor 10F according to a preferred sixth embodiment of the present invention.
- FIG. 10 is a schematic perspective view showing the appearance of a magnetic sensor 10G according to a preferred seventh embodiment of the present invention.
- FIG. 11 is a schematic perspective view showing the appearance of a magnetic sensor 10H according to a preferred eighth embodiment of the present invention.
- FIG. 12 is a schematic perspective view showing the appearance of a magnetic sensor 10I according to a ninth preferred embodiment of the present invention.
- FIG. 13 is a circuit diagram of a magnetic field detection apparatus using the magnetic sensor 10I.
- FIG. 14 is a schematic perspective view showing the appearance of a magnetic sensor 10J according to a preferred tenth embodiment of the present invention.
- FIG. 15 is a schematic perspective view showing the appearance of a magnetic sensor 10K according to an eleventh preferred embodiment of the present invention.
- FIG. 16 is a schematic perspective view showing the appearance of a magnetic sensor 10L according to a preferred twelfth embodiment of the present invention.
- FIG. 1 is a schematic perspective view showing an appearance of a magnetic sensor 10A according to a preferred first embodiment of the present invention.
- a magnetic sensor 10A includes a circuit board 20, a sensor chip 30 mounted on a mounting surface 21 of the circuit board 20, and a first magnetic body 41.
- the circuit board 20 is a board in which a wiring pattern is formed on an insulating base such as a resin, and a general printed board or an interposer board can be used.
- the mounting surface 21 of the circuit board 20 forms an xy plane, and the sensor chip 30 and the first magnetic body 41 are mounted on the mounting surface 21.
- a land pattern for establishing electrical connection with the sensor chip 30 is provided on the mounting surface 21 of the circuit board 20, but is not illustrated in FIG. 1.
- a constant voltage source 51, an operational amplifier 52, a fixed resistor 53, a voltage detection circuit 54, and the like shown in FIG. 2 are connected to the land pattern.
- the constant voltage source 51, the operational amplifier 52, the fixed resistor 53, and the voltage detection circuit 54 may be provided on the circuit board 20 itself, or may be provided on a board different from the circuit board 20.
- the sensor chip 30 has a substantially rectangular parallelepiped shape, and a magnetic detection element MR is formed on the element forming surface 31. As shown in FIG. 1, the element formation surface 31 forms an xy plane. That is, the sensor chip 30 is mounted in a flat position so that the element formation surface 31 is substantially parallel to the mounting surface 21 of the circuit board 20.
- the magnetic detection element MR is not particularly limited as long as it has an element whose physical characteristics change depending on the magnetic flux density.
- a magnetoresistive element whose resistance value changes according to the direction of the input magnetic field is used.
- the magnetization fixing direction of the magnetic detection element MR is set to the direction indicated by the arrow A in FIG. 1 (minus side in the x direction).
- a large number of sensor chips 30 are manufactured simultaneously using a collective substrate, and a large number of sensor chips 30 are obtained by dicing them. Accordingly, the four side surfaces 32 formed by dicing are substantially perpendicular to the element formation surface 31.
- the first magnetic body 41 is a block made of a high magnetic permeability material such as ferrite, and has a substantially rectangular parallelepiped shape in this embodiment.
- the first magnetic body 41 is provided not on the element forming surface 31 of the sensor chip 30 but on the one side surface 32. More specifically, they are fixed to each other so that the yz surface of the sensor chip 30 and the yz surface of the first magnetic body 41 face each other.
- the length in the y direction of the sensor chip 30 and the length in the y direction of the first magnetic body 41 may be the same or may be different from each other.
- the height of the sensor chip 30 in the z direction and the height of the first magnetic body 41 in the z direction may be the same or different from each other.
- the height of the first magnetic body 41 in the z direction is preferably equal to or less than the height of the sensor chip 30 in the z direction.
- the sensor chip 30 and the first magnetic body 41 can be fixed using an adhesive.
- the first magnetic body 41 can be fixed so as to cover almost the entire side surface 32, thereby fixing the both. Can be performed more reliably.
- an adhesive is applied between the circuit board 20 and the first magnetic body 41, the first magnetic body 41 is fixed to both the circuit board 20 and the sensor chip 30. The magnetic body 41 is fixed more firmly.
- the sensor chip 30 is placed flat on the circuit board 20, and the first magnetic body 41 is provided on the side surface 32 of the sensor chip 30.
- a sufficient bonding area between the sensor chip 30 and the first magnetic body 41 can be secured, so that the sensor chip 30 and the first magnetic body 41 can be more reliably fixed.
- the height in the z direction can be further reduced as compared with a conventional magnetic sensor.
- FIG. 2 is a circuit diagram of a magnetic field detection apparatus using the magnetic sensor 10A.
- the magnetic detection element MR and the fixed resistor 53 included in the magnetic sensor 10 ⁇ / b> A are connected in series between the output terminal of the operational amplifier 52 and the ground, and the connection point is the inversion of the operational amplifier 52. It is connected to the input terminal (-). A predetermined input voltage is applied to the non-inverting input terminal (+) of the operational amplifier 52 by the constant voltage source 51.
- the constant voltage source 51, the operational amplifier 52, and the fixed resistor 53 function as a constant current source. Therefore, when the resistance value of the magnetic detection element MR changes, the voltage across the magnetic detection element MR changes. This change is detected by the voltage detection circuit 54. Thereby, the magnetic field detection device shown in FIG. 2 can detect the magnetic field applied to the magnetic detection element MR.
- the magnetic flux is collected by the first magnetic body 41 provided on the side surface 32 of the sensor chip 30, so that the detection sensitivity is increased.
- FIG. 3 is a schematic perspective view showing an appearance of a magnetic sensor 10B according to a preferred second embodiment of the present invention.
- FIG. 3 is different from the magnetic sensor 10A shown in FIG. 1 in that a second magnetic body 42 is further provided on the element forming surface 31 of the sensor chip 30.
- the second magnetic body 42 is a rod-shaped body whose longitudinal direction is the y direction, and is provided on the element forming surface 31 of the sensor chip 30 and in the vicinity of the side surface 32 on which the first magnetic body 41 is provided. . Although it is not necessary for the first magnetic body 41 and the second magnetic body 42 to be in contact with each other, it is preferable that they are as close as possible.
- the second magnetic body 42 may be made of the same material as the first magnetic body 41, or may be made of a different material. Since the second magnetic body is smaller in size than the first magnetic body 41, a thick film process or a thin film is used instead of bonding a member made of the same material as the first magnetic body 41 (for example, a ferrite block). You may form directly on the element formation surface 31 of the sensor chip 30 using a process. Further, the first magnetic body 41 and the second magnetic body do not need to be separate members, and both may be integrated as shown in FIG.
- the magnetic sensor 10B according to the present embodiment can bend the magnetic flux in the z direction collected by the first magnetic body 41 in the x direction by the second magnetic body 42. Thereby, since the magnetic flux component in the sensitivity direction (x direction) of the magnetic detection element MR increases, it becomes possible to obtain a higher detection sensitivity than the magnetic sensor 10A according to the first embodiment.
- FIG. 5 is a schematic perspective view showing the appearance of a magnetic sensor 10C according to a preferred third embodiment of the present invention.
- the magnetic sensor 10C shown in FIG. 5 is different from the magnetic sensor 10A shown in FIG. 1 in that the sensor chip 30 and the first magnetic body 41 are mounted on the circuit board 20 in a state rotated by 90 °. Since the other points are the same as those of the magnetic sensor 10A shown in FIG. 1, the same elements are denoted by the same reference numerals, and redundant description is omitted.
- the element formation surface 31 of the sensor chip 30 forms a yz plane, and the magnetization fixed direction (arrow) of the magnetic detection element MR A) is set on the negative side in the z direction.
- the diced sensor chip 30 is mounted on the circuit board 20 in a state where it is laid sideways by 90 °.
- the first magnetic body 41 is provided on the xy plane that is the side surface 32 of the sensor chip 30. In the example shown in FIG. 5, the first magnetic body 41 is provided on the upper side of the sensor chip 30, but the first magnetic body 41 is provided on the lower side of the sensor chip 30, that is, between the circuit board 20 and the sensor chip 30.
- the body 41 may be arranged.
- the magnetic sensor 10 ⁇ / b> C according to the present embodiment can achieve the same low profile as the magnetic sensor 10 ⁇ / b> A according to the first embodiment if the height in the z direction is lowered by dicing the sensor chip 30 smaller. It becomes.
- FIG. 6 is a schematic perspective view showing the appearance of a magnetic sensor 10D according to a preferred fourth embodiment of the present invention.
- FIG. 6 differs from the magnetic sensor 10C shown in FIG. 5 in that a second magnetic body 42 is further provided on the element forming surface 31 of the sensor chip 30.
- the magnetic sensor 10D shown in FIG. Since the other points are the same as those of the magnetic sensor 10C shown in FIG. 5, the same elements are denoted by the same reference numerals, and redundant description is omitted.
- the magnetic sensor 10D according to the present embodiment can bend the magnetic flux in the x direction collected by the first magnetic body 41 in the z direction by the second magnetic body 42. Thereby, since the magnetic flux component in the sensitivity direction (z direction) of the magnetic detection element MR is increased, it is possible to obtain a detection sensitivity higher than that of the magnetic sensor 10C according to the third embodiment.
- FIG. 7 is a schematic perspective view showing the appearance of a magnetic sensor 10E according to a preferred fifth embodiment of the present invention.
- FIG. 7 differs from the magnetic sensor 10A shown in FIG. 1 in that two magnetic detection elements MR1 and MR2 are provided on the element forming surface 31 of the sensor chip 30.
- the magnetic detection elements MR1 and MR2 are arranged side by side in the x direction, and the magnetization fixed direction is aligned in the direction indicated by the arrow A (minus side in the x direction).
- the magnetic detection element MR1 is arranged close to the first magnetic body 41, and the magnetic detection element MR2 is arranged far from the first magnetic body 41.
- the resistance change amounts of the magnetic detection elements MR1 and MR2 are substantially the same for the magnetic flux in the x direction, but the distance from the first magnetic body 41 is different for the magnetic flux in the z direction. A difference occurs in the resistance change amount of the magnetic detection elements MR1 and MR2. Therefore, by detecting this difference, it is possible to selectively detect the magnetic flux in the z direction.
- FIG. 8 is a circuit diagram of a magnetic field detection apparatus using the magnetic sensor 10E.
- the magnetic field detection apparatus shown in FIG. 8 is different from the magnetic field detection apparatus shown in FIG. 2 in that the fixed resistor 53 shown in FIG. 2 is replaced with a magnetic detection element MR2.
- the magnetic field detection device shown in FIG. 8 can use the magnetic detection element MR2 as a fixed resistance that has little sensitivity to the magnetic flux in the z direction.
- the constant voltage source 51, the operational amplifier 52, and the magnetic detection element MR2 function as a constant current source. Therefore, when the resistance value of the magnetic detection element MR1 changes, the voltage across the magnetic detection element MR1 changes. This change is detected by the voltage detection circuit 54. Accordingly, the magnetic field detection device shown in FIG. 8 can detect the magnetic field applied to the magnetic detection element MR1. Further, since the magnetic detection element MR2 functions as a fixed resistance, it is not necessary to separately provide a fixed resistance in the magnetic field detection device.
- FIGS 9 to 11 are schematic perspective views showing the external appearances of the magnetic sensors 10F to 10H according to preferred sixth to eighth embodiments of the present invention, respectively.
- a magnetic sensor 10F according to the sixth embodiment shown in FIG. 9 is obtained by adding a second magnetic body 42 to the magnetic sensor 10E, and the significance thereof is as described with reference to FIG.
- the magnetic sensor 10G according to the seventh embodiment shown in FIG. 10 is obtained by rotating the sensor chip 30 and the first magnetic body 41 of the magnetic sensor 10E by 90 °, and the significance thereof is described with reference to FIG. As explained.
- the second magnetic body 42 is added to the magnetic sensor 10E, and the sensor chip 30 and the first magnetic body 41 are rotated by 90 °. The significance of this is as described with reference to FIG.
- FIG. 12 is a schematic perspective view showing the external appearance of a magnetic sensor 10I according to a ninth preferred embodiment of the present invention.
- the magnetization fixed directions are all aligned in the direction indicated by the arrow A (minus side in the x direction).
- the magnetic detection element MR1 and the magnetic detection element MR2 are arranged side by side in the x direction, and the magnetic detection element MR3 and the magnetic detection element MR4 are arranged side by side in the x direction.
- the magnetic detection elements MR1 and MR3 are disposed close to the first magnetic body 41, and the magnetic detection elements MR2 and MR4 are disposed distant from the first magnetic body 41.
- the distances from the first magnetic body 41 are equal to each other in the magnetic detection elements MR1 and MR3, and are equal to each other in the magnetic detection elements MR2 and MR4.
- the resistance change amounts of the magnetic detection elements MR1 to MR4 are substantially the same for the magnetic flux in the x direction, but the distance from the first magnetic body 41 is different for the magnetic flux in the z direction.
- a difference occurs in the resistance change amounts of the magnetic detection elements MR1 and MR2, and a difference occurs in the resistance change amount of the magnetic detection elements MR3 and MR4. And the difference is equal to each other. Therefore, by detecting these differences, it is possible to selectively detect the magnetic flux in the z direction.
- FIG. 13 is a circuit diagram of a magnetic field detection apparatus using the magnetic sensor 10I.
- the magnetic detection element MR1 is connected between the terminals E1 and E3, the magnetic detection element MR2 is connected between the terminals E2 and E3, the magnetic detection element MR3 is connected between the terminals E2 and E4, and the magnetic detection element MR4 is connected to the terminal.
- a predetermined voltage is applied by the constant voltage source 51 between the terminals E1 and E2.
- a voltage detection circuit 54 is connected between the terminals E3 and E4, whereby the level of the output voltage appearing between the terminals E3 and E4 is detected.
- the magnetic detection elements MR1 to MR4 are differential bridge circuits. Configure. As a result, the change in electrical resistance of the magnetic detection elements MR1 to MR4 according to the magnetic flux density is amplified by a factor of 2, so that detection with higher sensitivity can be performed.
- 14 to 16 are schematic perspective views showing the external appearances of the magnetic sensors 10J to 10L according to the tenth to twelfth preferred embodiments of the present invention, respectively.
- a magnetic sensor 10J according to the tenth embodiment shown in FIG. 14 is obtained by adding a second magnetic body 42 to the magnetic sensor 10I, and the significance thereof is as described with reference to FIG.
- the magnetic sensor 10K according to the eleventh embodiment shown in FIG. 15 is obtained by rotating the sensor chip 30 and the first magnetic body 41 of the magnetic sensor 10I by 90 °, and the significance thereof is described with reference to FIG.
- the magnetic sensor 10L according to the twelfth embodiment shown in FIG. 16 is obtained by adding the second magnetic body 42 to the magnetic sensor 10I and rotating the sensor chip 30 and the first magnetic body 41 by 90 °. The significance of this is as described with reference to FIG.
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Abstract
Description
本発明は磁気センサに関し、特に、センサチップに磁束を集めるための磁性体を備えた磁気センサに関する。 The present invention relates to a magnetic sensor, and more particularly to a magnetic sensor provided with a magnetic body for collecting magnetic flux on a sensor chip.
巨大磁気抵抗効果素子などを用いた磁気センサは、電流計や磁気エンコーダなどに広く用いられている。磁気センサには、センサチップに磁束を集めるための磁性体が設けられることがあり、この場合、磁性体はセンサチップの素子形成面に載置される(特許文献1参照)。 Magnetic sensors using giant magnetoresistive elements are widely used in ammeters and magnetic encoders. The magnetic sensor may be provided with a magnetic body for collecting magnetic flux on the sensor chip. In this case, the magnetic body is placed on the element formation surface of the sensor chip (see Patent Document 1).
しかしながら、一般にセンサチップは小型であることから、センサチップ上に磁性体を載置することは容易でなく、センサチップと磁性体を確実に固定することは困難であった。また、センサチップの素子形成面に磁性体を載置すると、磁気センサの全体の高さが高くなるため、低背化が困難であった。 However, since the sensor chip is generally small, it is not easy to place the magnetic body on the sensor chip, and it is difficult to securely fix the sensor chip and the magnetic body. In addition, when a magnetic material is placed on the element formation surface of the sensor chip, the overall height of the magnetic sensor increases, making it difficult to reduce the height.
したがって、本発明は、センサチップと磁性体をより確実に固定するとともに、低背化を実現可能な磁気センサを提供することを目的とする。 Therefore, an object of the present invention is to provide a magnetic sensor capable of more securely fixing a sensor chip and a magnetic body and realizing a low profile.
本発明による磁気センサは、少なくとも一つの磁気検出素子が形成された素子形成面及び前記素子形成面に対して略垂直な側面を有するセンサチップと、前記センサチップの前記側面に設けられた第1の磁性体と、を備えることを特徴とする。 The magnetic sensor according to the present invention includes an element formation surface on which at least one magnetic detection element is formed, a sensor chip having a side surface substantially perpendicular to the element formation surface, and a first provided on the side surface of the sensor chip. And a magnetic body.
本発明によれば、センサチップの側面に第1の磁性体が設けられていることから、センサチップと磁性体の接触面積を拡大することができる。このため、両者の固定をより確実に行うことができる。しかも、低背化を実現することも可能となる。 According to the present invention, since the first magnetic body is provided on the side surface of the sensor chip, the contact area between the sensor chip and the magnetic body can be increased. For this reason, both can be fixed more reliably. Moreover, it is possible to realize a low profile.
本発明による磁気センサは、前記センサチップの前記素子形成面であって、前記側面の近傍に設けられた第2の磁性体をさらに備えることが好ましい。これによれば、素子形成面に対して垂直方向の磁束をさらに水平方向に曲げることができることから、検出感度を高めることが可能となる。 The magnetic sensor according to the present invention preferably further includes a second magnetic body provided on the element forming surface of the sensor chip and in the vicinity of the side surface. According to this, since the magnetic flux in the vertical direction with respect to the element formation surface can be further bent in the horizontal direction, the detection sensitivity can be increased.
本発明において、前記磁気検出素子は第1及び第2の磁気検出素子を含み、前記第1及び第2の磁気検出素子は、前記側面からの距離が互いに異なることが好ましい。これによれば、第1の磁気検出素子と第2の磁気検出素子の出力差を利用して磁気検出を行うことが可能となる。 In the present invention, it is preferable that the magnetic detection element includes first and second magnetic detection elements, and the first and second magnetic detection elements have different distances from the side surface. According to this, magnetic detection can be performed using the output difference between the first magnetic detection element and the second magnetic detection element.
この場合、前記磁気検出素子は、前記側面からの距離が前記第1の磁気検出素子と等しい第3の磁気検出素子と、前記側面からの距離が前記第2の磁気検出素子と等しい第4の磁気検出素子とをさらに含むことが好ましい。これによれば、第1~第4の磁気検出素子を用いた差動ブリッジ回路を形成することが可能となり、この場合、より高感度な磁気検出を行うことが可能となる。 In this case, the magnetic detection element includes a third magnetic detection element having a distance from the side surface equal to that of the first magnetic detection element, and a fourth distance from the side surface being equal to that of the second magnetic detection element. It is preferable to further include a magnetic detection element. According to this, it is possible to form a differential bridge circuit using the first to fourth magnetic detection elements, and in this case, it is possible to perform magnetic detection with higher sensitivity.
本発明による磁気センサは、前記センサチップが搭載された搭載面を有する回路基板をさらに備えることが好ましい。この場合、前記センサチップの前記素子形成面は、前記回路基板の前記搭載面と略平行であっても構わないし、前記回路基板の前記搭載面に対して略垂直であっても構わない。 The magnetic sensor according to the present invention preferably further comprises a circuit board having a mounting surface on which the sensor chip is mounted. In this case, the element formation surface of the sensor chip may be substantially parallel to the mounting surface of the circuit board, or may be substantially perpendicular to the mounting surface of the circuit board.
本発明によれば、センサチップと磁性体をより確実に固定できるとともに、磁気センサの低背化を実現することが可能となる。 According to the present invention, it is possible to more securely fix the sensor chip and the magnetic body, and it is possible to reduce the height of the magnetic sensor.
以下、添付図面を参照しながら、本発明の好ましい実施形態について詳細に説明する。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
図1は、本発明の好ましい第1の実施形態による磁気センサ10Aの外観を示す略斜視図である。
FIG. 1 is a schematic perspective view showing an appearance of a
図1に示すように、本発明による磁気センサ10Aは、回路基板20と、回路基板20の搭載面21に搭載されたセンサチップ30及び第1の磁性体41によって構成される。
As shown in FIG. 1, a
回路基板20は、樹脂などの絶縁性基体に配線パターンが形成された基板であり、一般的なプリント基板やインターポーザ基板などを用いることができる。回路基板20の搭載面21はxy平面を構成し、この搭載面21にセンサチップ30及び第1の磁性体41が搭載される。回路基板20の搭載面21には、センサチップ30との電気的接続を取るためのランドパターンが設けられているが、図1においては図示されていない。ランドパターンには、図2に示す定電圧源51、オペアンプ52、固定抵抗53及び電圧検出回路54などが接続される。定電圧源51、オペアンプ52、固定抵抗53及び電圧検出回路54は、回路基板20自体に設けられていても構わないし、回路基板20とは別の基板に設けられていても構わない。
The
センサチップ30は略直方体形状を有しており、素子形成面31には磁気検出素子MRが形成されている。図1に示すように、素子形成面31はxy面を構成している。つまり、センサチップ30は、素子形成面31が回路基板20の搭載面21と略平行となるよう、平置きして搭載されている。
The
磁気検出素子MRは、磁束密度によって物理特性の変化する素子であれば特に限定されないが、本実施形態においては、入力される磁界の向きに応じて抵抗値が変化する磁気抵抗効果素子が用いられる。磁気検出素子MRの磁化固定方向は、図1の矢印Aが示す方向(x方向におけるマイナス側)に設定されている。センサチップ30は、集合基板を用いて多数同時に作製され、これをダイシングすることによって多数個取りされる。したがって、ダイシングにより形成された4つの側面32は、素子形成面31に対して略垂直である。
The magnetic detection element MR is not particularly limited as long as it has an element whose physical characteristics change depending on the magnetic flux density. In the present embodiment, a magnetoresistive element whose resistance value changes according to the direction of the input magnetic field is used. . The magnetization fixing direction of the magnetic detection element MR is set to the direction indicated by the arrow A in FIG. 1 (minus side in the x direction). A large number of
第1の磁性体41は、フェライトなどの高透磁率材料からなるブロックであり、本実施形態では略直方体形状である。そして、本実施形態においては、第1の磁性体41がセンサチップ30の素子形成面31ではなく、1つの側面32に設けられている。より具体的には、センサチップ30のyz面と第1の磁性体41のyz面が対向するよう、互いに固定されている。ここで、センサチップ30のy方向における長さと、第1の磁性体41のy方向における長さについては、互いに同じであっても構わないし、両者に差があっても構わない。また、センサチップ30のz方向における高さと、第1の磁性体41のz方向における高さについては、互いに同じであっても構わないし、両者に差があっても構わない。但し、第1の磁性体41のz方向における高さについては、センサチップ30のz方向における高さと同等か、それ以下であることが好ましい。
The first
センサチップ30と第1の磁性体41の固定は、接着剤を用いて行うことができる。この場合、センサチップ30の側面32には磁気検出素子MRが設けられていないことから、側面32のほぼ全面を覆うように第1の磁性体41を固定することができ、これにより両者の固定をより確実に行うことができる。さらに、回路基板20と第1の磁性体41との間にも接着剤を塗布すれば、第1の磁性体41は回路基板20とセンサチップ30の両方に固定されることから、第1の磁性体41がより強固に固定される。
The
このように、本実施形態による磁気センサ10Aは、センサチップ30が回路基板20に平置きされており、且つ、センサチップ30の側面32に第1の磁性体41が設けられている。これにより、センサチップ30と第1の磁性体41との接着面積を十分に確保することができることから、センサチップ30と第1の磁性体41をより確実に固定することができる。しかも、従来の磁気センサに比べて、z方向における高さをより低背化することも可能となる。
Thus, in the
図2は、磁気センサ10Aを用いた磁界検出装置の回路図である。
FIG. 2 is a circuit diagram of a magnetic field detection apparatus using the
図2に示す磁界検出装置は、磁気センサ10Aに接続された定電圧源51、オペアンプ52、固定抵抗53及び電圧検出回路54を備える。図2に示すように、磁気センサ10Aに含まれる磁気検出素子MRと固定抵抗53は、オペアンプ52の出力端子とグランドとの間に直列に接続されており、その接続点は、オペアンプ52の反転入力端子(-)に接続されている。オペアンプ52の非反転入力端子(+)には、定電圧源51によって所定の入力電圧が印加される。
2 includes a
かかる構成により、定電圧源51、オペアンプ52及び固定抵抗53は定電流源として機能することから、磁気検出素子MRの抵抗値が変化すると、磁気検出素子MRの両端間の電圧が変化する。この変化は、電圧検出回路54によって検出される。これにより、図2に示す磁界検出装置は、磁気検出素子MRに与えられる磁界を検出することが可能となる。そして、本実施形態においては、センサチップ30の側面32に設けられた第1の磁性体41によって集磁されることから、検出感度が高められる。
With this configuration, the
図3は、本発明の好ましい第2の実施形態による磁気センサ10Bの外観を示す略斜視図である。
FIG. 3 is a schematic perspective view showing an appearance of a
図3に示す磁気センサ10Bは、センサチップ30の素子形成面31に第2の磁性体42がさらに設けられている点において、図1に示した磁気センサ10Aと相違する。その他の点については、図1に示した磁気センサ10Aと同一であることから、同一の要素には同一の符号を付し、重複する説明は省略する。
3 is different from the
第2の磁性体42はy方向を長手方向とする棒状体であり、センサチップ30の素子形成面31であって、第1の磁性体41が設けられた側面32の近傍に設けられている。第1の磁性体41と第2の磁性体42が接触している必要はないが、両者はできる限り近接していることが好ましい。第2の磁性体42は、第1の磁性体41と同じ材料からなるものであっても構わないし、異なる材料からなるものであっても構わない。第2の磁性体は、第1の磁性体41と比べてサイズが小さいため、第1の磁性体41と同じ材料からなる部材(例えばフェライトのブロック)を接着する代わりに、厚膜工程又は薄膜工程を用いてセンサチップ30の素子形成面31に直接形成しても構わない。また、第1の磁性体41と第2の磁性体が別部材である必要はなく、図4に示すように両者が一体化していても構わない。
The second
本実施形態による磁気センサ10Bは、かかる構成により、第1の磁性体41によって集磁したz方向の磁束を第2の磁性体42によってx方向に曲げることができる。これにより、磁気検出素子MRの感度方向(x方向)における磁束成分が増加することから、第1の実施形態による磁気センサ10Aよりも高い検出感度を得ることが可能となる。
With this configuration, the
図5は、本発明の好ましい第3の実施形態による磁気センサ10Cの外観を示す略斜視図である。
FIG. 5 is a schematic perspective view showing the appearance of a
図5に示す磁気センサ10Cは、センサチップ30及び第1の磁性体41が90°回転した状態で回路基板20に搭載されている点において、図1に示した磁気センサ10Aと相違する。その他の点については、図1に示した磁気センサ10Aと同一であることから、同一の要素には同一の符号を付し、重複する説明は省略する。
The
本実施形態においては、センサチップ30及び第1の磁性体41が90°回転しているため、センサチップ30の素子形成面31がyz面を構成し、磁気検出素子MRの磁化固定方向(矢印A)がz方向におけるマイナス側に設定されている。このように、本実施形態では、ダイシングしたセンサチップ30を90°横に寝かせた状態で回路基板20に搭載されている。
In the present embodiment, since the
そして、第1の磁性体41は、センサチップ30の側面32であるxy面に設けられている。図5に示す例では、センサチップ30の上側に第1の磁性体41が設けられているが、センサチップ30の下側、つまり、回路基板20とセンサチップ30との間に第1の磁性体41を配置しても構わない。
The first
本実施形態による磁気センサ10Cは、センサチップ30をより小さくダイシングすることによってz方向における高さを低くすれば、第1の実施形態による磁気センサ10Aと同様の低背化を実現することが可能となる。
The magnetic sensor 10 </ b> C according to the present embodiment can achieve the same low profile as the magnetic sensor 10 </ b> A according to the first embodiment if the height in the z direction is lowered by dicing the
図6は、本発明の好ましい第4の実施形態による磁気センサ10Dの外観を示す略斜視図である。
FIG. 6 is a schematic perspective view showing the appearance of a
図6に示す磁気センサ10Dは、センサチップ30の素子形成面31に第2の磁性体42がさらに設けられている点において、図5に示した磁気センサ10Cと相違する。その他の点については、図5に示した磁気センサ10Cと同一であることから、同一の要素には同一の符号を付し、重複する説明は省略する。
6 differs from the
本実施形態による磁気センサ10Dは、第1の磁性体41によって集磁したx方向の磁束を第2の磁性体42によってさらにz方向に曲げることができる。これにより、磁気検出素子MRの感度方向(z方向)における磁束成分が増加することから、第3の実施形態による磁気センサ10Cよりも高い検出感度を得ることが可能となる。
The
図7は、本発明の好ましい第5の実施形態による磁気センサ10Eの外観を示す略斜視図である。
FIG. 7 is a schematic perspective view showing the appearance of a
図7に示す磁気センサ10Eは、センサチップ30の素子形成面31に2つの磁気検出素子MR1,MR2が設けられている点において、図1に示した磁気センサ10Aと相違する。その他の点については、図1に示した磁気センサ10Aと同一であることから、同一の要素には同一の符号を付し、重複する説明は省略する。
7 differs from the
図7に示すように、磁気検出素子MR1,MR2は、x方向に並べて配置されており、且つ、磁化固定方向が矢印Aに示す方向(x方向におけるマイナス側)に揃えられている。そして、磁気検出素子MR1は第1の磁性体41から見て近くに配置され、磁気検出素子MR2は第1の磁性体41から見て遠くに配置されている。
As shown in FIG. 7, the magnetic detection elements MR1 and MR2 are arranged side by side in the x direction, and the magnetization fixed direction is aligned in the direction indicated by the arrow A (minus side in the x direction). The magnetic detection element MR1 is arranged close to the first
かかる構成により、x方向の磁束に対するは磁気検出素子MR1,MR2の抵抗変化量はほぼ同じとなるが、z方向の磁束に対しては、第1の磁性体41からの距離が互いに異なるため、磁気検出素子MR1,MR2の抵抗変化量に差が生じる。したがって、この差を検出することにより、z方向の磁束を選択的に検出することが可能となる。
With this configuration, the resistance change amounts of the magnetic detection elements MR1 and MR2 are substantially the same for the magnetic flux in the x direction, but the distance from the first
図8は、磁気センサ10Eを用いた磁界検出装置の回路図である。
FIG. 8 is a circuit diagram of a magnetic field detection apparatus using the
図8に示す磁界検出装置は、図2に示した固定抵抗53が磁気検出素子MR2に置き換えられている点において、図2に示した磁界検出装置と相違する。そして、図8に示す磁界検出装置は、磁気検出素子MR2をz方向の磁束に対する感度のほとんどない固定抵抗として使用できる。これにより、定電圧源51、オペアンプ52及び磁気検出素子MR2は定電流源として機能することから、磁気検出素子MR1の抵抗値が変化すると、磁気検出素子MR1の両端間の電圧が変化する。この変化は、電圧検出回路54によって検出される。これにより、図8に示す磁界検出装置は、磁気検出素子MR1に与えられる磁界を検出することが可能となる。また、磁気検出素子MR2が固定抵抗として機能することから、磁界検出装置に固定抵抗を別個設ける必要が無くなる。
The magnetic field detection apparatus shown in FIG. 8 is different from the magnetic field detection apparatus shown in FIG. 2 in that the fixed
図9~図11は、それぞれ本発明の好ましい第6~第8の実施形態による磁気センサ10F~10Hの外観を示す略斜視図である。
9 to 11 are schematic perspective views showing the external appearances of the
図9に示す第6の実施形態による磁気センサ10Fは、磁気センサ10Eに第2の磁性体42を追加したものであり、その意義は図3を参照しながら説明したとおりである。また、図10に示す第7の実施形態による磁気センサ10Gは、磁気センサ10Eのセンサチップ30及び第1の磁性体41を90°回転させたものであり、その意義は図5を参照しながら説明したとおりである。さらに、図11に示す第8の実施形態による磁気センサ10Hは、磁気センサ10Eに第2の磁性体42を追加し、且つ、センサチップ30及び第1の磁性体41を90°回転させたものであり、その意義は図6を参照しながら説明したとおりである。
A
図12は、本発明の好ましい第9の実施形態による磁気センサ10Iの外観を示す略斜視図である。
FIG. 12 is a schematic perspective view showing the external appearance of a
図12に示す磁気センサ10Iは、センサチップ30の素子形成面31に4つの磁気検出素子MR1~MR4が設けられている点において、図7に示した磁気センサ10Eと相違する。その他の点については、図7に示した磁気センサ10Eと同一であることから、同一の要素には同一の符号を付し、重複する説明は省略する。
12 differs from the
図12に示すように、磁気検出素子MR1~MR4は、磁化固定方向が矢印Aに示す方向(x方向におけるマイナス側)に全て揃えられている。また、磁気検出素子MR1と磁気検出素子MR2はx方向に並べて配置され、磁気検出素子MR3と磁気検出素子MR4はx方向に並べて配置されている。そして、磁気検出素子MR1,MR3は第1の磁性体41から見て近くに配置され、磁気検出素子MR2,MR4は第1の磁性体41から見て遠くに配置されている。ここで、第1の磁性体41からの距離は、磁気検出素子MR1,MR3で互いに等しく、且つ、磁気検出素子MR2,MR4で互いに等しい。
As shown in FIG. 12, in the magnetic detection elements MR1 to MR4, the magnetization fixed directions are all aligned in the direction indicated by the arrow A (minus side in the x direction). The magnetic detection element MR1 and the magnetic detection element MR2 are arranged side by side in the x direction, and the magnetic detection element MR3 and the magnetic detection element MR4 are arranged side by side in the x direction. The magnetic detection elements MR1 and MR3 are disposed close to the first
かかる構成により、x方向の磁束に対するは磁気検出素子MR1~MR4の抵抗変化量はほぼ同じとなるが、z方向の磁束に対しては、第1の磁性体41からの距離が互いに異なるため、磁気検出素子MR1,MR2の抵抗変化量に差が生じるとともに、磁気検出素子MR3,MR4の抵抗変化量に差が生じる。そして、その差は互いに等しい。したがって、これらの差を検出することにより、z方向の磁束を選択的に検出することが可能となる。
With this configuration, the resistance change amounts of the magnetic detection elements MR1 to MR4 are substantially the same for the magnetic flux in the x direction, but the distance from the first
図13は、磁気センサ10Iを用いた磁界検出装置の回路図である。
FIG. 13 is a circuit diagram of a magnetic field detection apparatus using the
図13に示す磁界検出装置は、4つの磁気検出素子MR1~MR4がブリッジ回路を構成している。つまり、磁気検出素子MR1は端子E1,E3間に接続され、磁気検出素子MR2は端子E2,E3間に接続され、磁気検出素子MR3は端子E2,E4間に接続され、磁気検出素子MR4は端子E1,E4間に接続されている。そして、端子E1,E2間には、定電圧源51によって所定の電圧が印加される。また、端子E3,E4間には電圧検出回路54が接続され、これによって端子E3,E4間に現れる出力電圧のレベルが検出される。
In the magnetic field detection apparatus shown in FIG. 13, four magnetic detection elements MR1 to MR4 form a bridge circuit. That is, the magnetic detection element MR1 is connected between the terminals E1 and E3, the magnetic detection element MR2 is connected between the terminals E2 and E3, the magnetic detection element MR3 is connected between the terminals E2 and E4, and the magnetic detection element MR4 is connected to the terminal. Connected between E1 and E4. A predetermined voltage is applied by the
そして、図13に示すように、磁気検出素子MR1,MR2の接続順序と、磁気検出素子MR3,MR4の接続順序が互いに逆とされていることから、磁気検出素子MR1~MR4は差動ブリッジ回路を構成する。これにより、磁束密度に応じた磁気検出素子MR1~MR4の電気抵抗の変化が2倍に増幅されるため、より高感度な検出を行うことが可能となる。 As shown in FIG. 13, since the connection order of the magnetic detection elements MR1 and MR2 and the connection order of the magnetic detection elements MR3 and MR4 are opposite to each other, the magnetic detection elements MR1 to MR4 are differential bridge circuits. Configure. As a result, the change in electrical resistance of the magnetic detection elements MR1 to MR4 according to the magnetic flux density is amplified by a factor of 2, so that detection with higher sensitivity can be performed.
図14~図16は、それぞれ本発明の好ましい第10~第12の実施形態による磁気センサ10J~10Lの外観を示す略斜視図である。
14 to 16 are schematic perspective views showing the external appearances of the
図14に示す第10の実施形態による磁気センサ10Jは、磁気センサ10Iに第2の磁性体42を追加したものであり、その意義は図3を参照しながら説明したとおりである。また、図15に示す第11の実施形態による磁気センサ10Kは、磁気センサ10Iのセンサチップ30及び第1の磁性体41を90°回転させたものであり、その意義は図5を参照しながら説明したとおりである。さらに、図16に示す第12の実施形態による磁気センサ10Lは、磁気センサ10Iに第2の磁性体42を追加し、且つ、センサチップ30及び第1の磁性体41を90°回転させたものであり、その意義は図6を参照しながら説明したとおりである。
A
以上、本発明の好ましい実施形態について説明したが、本発明は、上記の実施形態に限定されることなく、本発明の主旨を逸脱しない範囲で種々の変更が可能であり、それらも本発明の範囲内に包含されるものであることはいうまでもない。 The preferred embodiments of the present invention have been described above, but the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention. Needless to say, it is included in the range.
10A~10L 磁気センサ
20 回路基板
21 搭載面
30 センサチップ
31 素子形成面
32 側面
41 第1の磁性体
42 第2の磁性体
51 定電圧源
52 オペアンプ
53 固定抵抗
54 電圧検出回路
E1~E4 端子
MR,MR1~MR4 磁気検出素子
10A to 10L
Claims (6)
前記センサチップの前記側面に設けられた第1の磁性体と、を備えることを特徴とする磁気センサ。 A sensor chip having an element formation surface on which at least one magnetic detection element is formed and a side surface substantially perpendicular to the element formation surface;
And a first magnetic body provided on the side surface of the sensor chip.
前記第1及び第2の磁気検出素子は、前記側面からの距離が互いに異なることを特徴とする請求項1又は2に記載の磁気センサ。 The magnetic detection element includes first and second magnetic detection elements,
The magnetic sensor according to claim 1, wherein the first and second magnetic detection elements have different distances from the side surface.
前記センサチップの前記素子形成面は、前記回路基板の前記搭載面と略平行であることを特徴とする請求項1乃至4のいずれか一項に記載の磁気センサ。 A circuit board having a mounting surface on which the sensor chip is mounted;
5. The magnetic sensor according to claim 1, wherein the element formation surface of the sensor chip is substantially parallel to the mounting surface of the circuit board.
前記センサチップの前記素子形成面は、前記回路基板の前記搭載面に対して略垂直であることを特徴とする請求項1乃至4のいずれか一項に記載の磁気センサ。 A circuit board having a mounting surface on which the sensor chip is mounted;
5. The magnetic sensor according to claim 1, wherein the element formation surface of the sensor chip is substantially perpendicular to the mounting surface of the circuit board.
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| JP (1) | JP6927044B2 (en) |
| WO (1) | WO2017077871A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019095319A (en) * | 2017-11-24 | 2019-06-20 | Tdk株式会社 | Magnetic sensor |
| JP2020003280A (en) * | 2018-06-27 | 2020-01-09 | Tdk株式会社 | Magnetic sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002319110A (en) * | 2001-04-23 | 2002-10-31 | Sony Corp | Magnetic shield type magnetoresistive head and method of manufacturing the same |
| JP2006003116A (en) * | 2004-06-15 | 2006-01-05 | Hitachi Metals Ltd | Magnetic sensor |
| JP2009047444A (en) * | 2007-08-14 | 2009-03-05 | Shinka Jitsugyo Kk | Magnetic sensor and manufacturing method therefor |
| JP2009276159A (en) * | 2008-05-14 | 2009-11-26 | Sae Magnetics (Hk) Ltd | Magnetic sensor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112008001414T5 (en) * | 2007-05-28 | 2010-04-22 | Mitsubishi Electric Corp. | Magnetic field detection device |
| US8486723B1 (en) * | 2010-08-19 | 2013-07-16 | MCube Inc. | Three axis magnetic sensor device and method |
-
2016
- 2016-10-20 JP JP2017548703A patent/JP6927044B2/en active Active
- 2016-10-20 WO PCT/JP2016/081104 patent/WO2017077871A1/en not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002319110A (en) * | 2001-04-23 | 2002-10-31 | Sony Corp | Magnetic shield type magnetoresistive head and method of manufacturing the same |
| JP2006003116A (en) * | 2004-06-15 | 2006-01-05 | Hitachi Metals Ltd | Magnetic sensor |
| JP2009047444A (en) * | 2007-08-14 | 2009-03-05 | Shinka Jitsugyo Kk | Magnetic sensor and manufacturing method therefor |
| JP2009276159A (en) * | 2008-05-14 | 2009-11-26 | Sae Magnetics (Hk) Ltd | Magnetic sensor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019095319A (en) * | 2017-11-24 | 2019-06-20 | Tdk株式会社 | Magnetic sensor |
| JP7119351B2 (en) | 2017-11-24 | 2022-08-17 | Tdk株式会社 | magnetic sensor |
| JP2020003280A (en) * | 2018-06-27 | 2020-01-09 | Tdk株式会社 | Magnetic sensor |
| JP7172178B2 (en) | 2018-06-27 | 2022-11-16 | Tdk株式会社 | magnetic sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6927044B2 (en) | 2021-08-25 |
| JPWO2017077871A1 (en) | 2018-08-16 |
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