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WO2017073967A1 - Pattern forming device using photo sintering and pattern forming method using same - Google Patents

Pattern forming device using photo sintering and pattern forming method using same Download PDF

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Publication number
WO2017073967A1
WO2017073967A1 PCT/KR2016/011940 KR2016011940W WO2017073967A1 WO 2017073967 A1 WO2017073967 A1 WO 2017073967A1 KR 2016011940 W KR2016011940 W KR 2016011940W WO 2017073967 A1 WO2017073967 A1 WO 2017073967A1
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WO
WIPO (PCT)
Prior art keywords
substrate
conductive ink
light
pattern forming
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2016/011940
Other languages
French (fr)
Korean (ko)
Inventor
우규희
이택민
권신
김인영
최영만
강동우
김광영
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Institute of Machinery and Materials KIMM
Original Assignee
Korea Institute of Machinery and Materials KIMM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020150148581A external-priority patent/KR101704693B1/en
Priority claimed from KR1020150157656A external-priority patent/KR101773148B1/en
Application filed by Korea Institute of Machinery and Materials KIMM filed Critical Korea Institute of Machinery and Materials KIMM
Priority to CN201680062921.8A priority Critical patent/CN108353503B/en
Publication of WO2017073967A1 publication Critical patent/WO2017073967A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/02—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal

Definitions

  • the present invention relates to a pattern forming apparatus using optical sintering and a pattern forming method using the same, and more particularly, to a pattern forming apparatus for forming a pattern by sintering ink applied on a flexible substrate using a photo sintering process and using the same It relates to a pattern formation method.
  • the ink used in the conventional printed electronic technology is a conductive ink in which metal powders such as gold, silver, and copper are mixed in a solution, and these metals have high electrical conductivity and mechanical flexibility, and thus have advantages in being applied to flexible substrates.
  • the heat sintering process is a process of cooling after heating at a high temperature of 200 to 300 degrees Celsius for the sintering of the metal powder contained in the conductive ink. This applies.
  • the heat sintering process as described above has a problem that the process time increases due to a high temperature process and is difficult to be applied to a flexible substrate including a polymer that cannot be used at a high temperature.
  • copper powder which is frequently used as a conductive ink with low price and high electrical conductivity, has a problem in that oxidation easily occurs in an air atmosphere during high temperature sintering, so that conductivity is lowered, so that copper is not oxidized in an inert gas or a high vacuum atmosphere. There is a problem that the process cost increases as the process is to proceed.
  • the conductive ink is coated on the entire surface of the substrate, and processes such as wet etching, dry etching, photolithography, or printing methods such as inkjet printing are applied.
  • processes such as wet etching, dry etching, photolithography, or printing methods such as inkjet printing are applied.
  • Patent Registration No. 10-1077431 Korean Patent Publication No. 10-2012-0092294, Korean Patent Publication No. 10-2011-0138963, and the like.
  • an object of the present invention is to effectively form a pattern on a flexible substrate while reducing the pattern formation process time, to improve oxidation stability, and to facilitate a large area pattern.
  • a pattern forming apparatus using optical sintering that can be formed.
  • Another object of the present invention relates to a pattern forming method using the pattern forming apparatus.
  • Pattern forming apparatus includes a supply roll, a coating device, a mask, a light generating device and a recovery roll.
  • the feed roll supplies a flexible substrate.
  • the applicator applies conductive ink onto the substrate.
  • the mask is positioned on the substrate to which the conductive ink is applied to form a pattern.
  • the photo growth growth value is irradiated with a conductive ink applied on the substrate from the upper portion of the mask to form a conductive pattern on the substrate.
  • the recovery roll recovers the substrate on which the conductive pattern is formed.
  • the pattern forming apparatus is a measuring device for measuring the distance between the light generating device and the substrate, a vertical moving device for moving the mask or the light generating device in a vertical direction with respect to the substrate, to the mask
  • the apparatus may further include a sensing device configured to detect the formed marker and the marker formed on the substrate, and a horizontal moving apparatus for moving the mask or the light generating device in a horizontal direction with respect to the substrate.
  • the light irradiated from the light generating device may be an IPL (intense pulsed light).
  • the IPL irradiated by the light generating device may be a surface light source.
  • the edge of the surface light source irradiated by the light generating device may be irradiated to overlap the conductive ink on the substrate.
  • the light emitting device may further include an adhesive roll positioned between the light generating device and the recovery roll to bond and recover conductive ink that is not bonded to the substrate because the light is not formed to form a conductive pattern. have.
  • the adhesive roll may provide an adhesive tape for bonding a conductive ink that is not adhered to the substrate.
  • the adhesive roll located in the front or rear end of the adhesive roll, it may further include a cleaning device for washing the conductive ink applied to the substrate.
  • the cleaning device includes a solvent in which the substrate is contained, and may apply ultrasonic waves or vibrations to the solvent.
  • the conductive ink may be a solution containing nanometal powder or semiconductor powder.
  • the nanometal powder or the semiconductor powder may absorb heat to be fused or impregnated into the substrate.
  • the nanometal powder may be in the shape of any one of a wire (wire), rod (sphere).
  • the wire-shaped nanometal powder may have a diameter of 10 nm to 100 nm, and a length of 1 ⁇ m to 1 mm.
  • the nanometal powder may include at least one of copper (Cu), aluminum (Al), nickel (Ni), gold (Au), silver (Ag), platinum (Pt).
  • the semiconductor powder gallium-phosphorus (GaP), zirconium oxide (ZrO 2 ), silicon (Si), cadmium sulfide (CdS), titanium dioxide (TiO 2 ), zinc oxide (ZnO), iron oxide It may include at least one of (Fe 2 O 3 ), tungsten oxide (WO 2 ), tin oxide (SnO 2 ).
  • the semiconductor powder may have a band gap of 3.5 eV or less.
  • a conductive ink is applied onto a flexible substrate supplied by a supply roll.
  • the mask is positioned on the substrate on which the conductive ink is applied.
  • the conductive pattern is formed on the substrate by irradiating light onto the film of the conductive ink applied on the substrate from the upper portion of the mask.
  • the substrate on which the conductive pattern is formed is recovered.
  • the method may further include removing conductive ink that is not formed as a conductive pattern because the light is not irradiated and is not adhered to the substrate.
  • the conductive ink in the removing of the conductive ink, may be removed with an adhesive tape.
  • the conductive ink in the removing of the conductive ink, may be removed by washing or wiping the conductive ink using a solvent dissolving the conductive ink.
  • the conductive ink in the removing of the conductive ink, may be removed by immersing in a solvent for dissolving the conductive ink and applying ultrasonic waves.
  • the conductive ink in the step of applying the conductive ink, is bar coating (spin coating), spin coating (slot coating), slot die coating (gravure coating), spray coating (gravure coating), spray coating (spray coating) or dip coating (dip coating) can be applied.
  • the irradiated light may be irradiated for 1 ms to 100 ms at an intensity of 0.01 J / cm 2 to 100 J / cm 2 .
  • the light is irradiated on the substrate on which the conductive ink is applied to form a conductive pattern, and the conductive ink is sintered by using IPL light, so that light sintering can be performed in a relatively short time. It is possible to form a conductive pattern or a semiconductor pattern having excellent electrical conductivity on the flexible substrate to prevent oxidation.
  • the flexible substrate is continuously supplied by the supply roll and the recovery roll, and a conductive pattern may be formed, processability and productivity may be improved.
  • the portion irradiated with the IPL light is sintered, and self-nanoembedding occurs on the substrate, thereby improving adhesion to the substrate, and relatively low adhesion to the portion not irradiated with light. Since it can be easily removed in the removal process described later, it is possible to form an effective pattern on a continuous process of the substrate and can easily form a pattern for a relatively large area.
  • the above process can be easily applied to a flexible substrate including a relatively poor temperature plastic material.
  • the IPL light is provided as a surface light source
  • the pattern formation can be more effectively performed on substrates continuously provided, and the edges of the surface light sources are irradiated to overlap each other, thereby increasing the light intensity at a portion where the light intensity is relatively low. It is possible to form a pattern of uniform quality.
  • the pattern forming apparatus and the pattern forming method may be applied not only to the nano metal powder containing the metal nanoparticles, but also to the semiconductor powder containing the semiconductor particles. It can improve and form.
  • FIG. 1 is a schematic diagram showing a pattern forming apparatus using light sintering according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram showing a pattern forming apparatus using optical sintering according to another embodiment of the present invention.
  • 3A to 3D are process diagrams illustrating a pattern forming method using the pattern forming apparatus of FIG. 1.
  • 4A to 4D are schematic diagrams illustrating a pattern forming method using the pattern forming apparatus of FIG. 1.
  • 5A and 5B are enlarged views showing states before and after photosintering in region A of FIG. 3B.
  • FIG. 6 is a schematic diagram showing an example of light application using a light generating device in the pattern forming apparatus of FIG. 1.
  • coating apparatus 110 substrate
  • FIG. 1 is a schematic diagram showing a pattern forming apparatus using light sintering according to an embodiment of the present invention.
  • the pattern forming apparatus 10 includes a coating device 100, a mask 200, a light generating device 300, a supply roll 400, a recovery roll 500, and an adhesive roll 600. .
  • the supply roll 400 supplies the substrate 110 in a state in which the substrate 110 is wound, and the recovery roll 500 is spaced apart from the supply roll 400 by a predetermined distance to form all of the substrates ( Recover it while winding 110).
  • the pattern forming apparatus 10 constitutes a roll-to-roll printing apparatus for continuously supplying and recovering the substrate 110.
  • the substrate 110 is a flexible substrate, and may also include a plastic or synthetic rubber material.
  • the substrate 110 may be polycarbonate, polyethylene terephthalate, or polyimide.
  • the coating device 100 is positioned at the rear end of the supply roll 400 to apply the conductive ink 120 on the substrate 110.
  • the applicator 100 may apply the conductive ink 120 to bar coating, spin coating, slot die coating, gravure coating, and spray coating. It is applied by one of spray coating and dip coating.
  • the coating device 100 may include an injector capable of injecting the conductive ink 120 toward the substrate 110.
  • the conductive ink 120 may be ink in which nanometal powder or semiconductor powder and a solution are mixed.
  • the nanometal powder may be in the shape of any one of a wire, rod, and sphere, and the wire-shaped nanometal powder may have a diameter of 10 nm to 100 nm, and 1 ⁇ m. It may have a length of 1 mm.
  • the wire-shaped nanometal powder may have an aspect ratio in the range of 10 to 10,000
  • the cross-section of the wire shape may have a variety of shapes, such as polygonal, elliptical, semicircular.
  • the nanometal powder may have various shapes other than those illustrated above as long as the nanometal powder absorbs heat through irradiated light to improve adhesiveness on the substrate 110.
  • the nanometal powder may include at least one of copper (Cu), aluminum (Al), nickel (Ni), gold (Au), silver (Ag), and platinum (Pt).
  • the semiconductor powder may be gallium-phosphorus (GaP), zirconium oxide (ZrO 2 ), silicon (Si), cadmium sulfide (CdS), titanium dioxide (TiO 2 ), zinc oxide (ZnO), or iron oxide (Fe 2 O). 3 ), tungsten oxide (WO 2 ), tin oxide (SnO 2 ), and in this case, a band gap may be 3.5 eV or less.
  • the solution in which the nanometal powder or the semiconductor powder is mixed may include a dispersant and a solvent.
  • the dispersant may be, for example, poly-N-vinylpyrrolidone, polyvinyl alcohol, polyacid or derivatives thereof.
  • the solvent may be used without limitation a variety of conventional solvents capable of dispersing nano metal powder or semiconductor powder, for example, ethanol, methanol, propanol, isopropanol, 1-butanol, 2-butanol, isobutanol, Alcohol series consisting of hexanol and octanol, 2-methoxyethoxyethanol, diethylene glycol, propylene glycol, triethylene glycol, tetraethylene glycol, diporoethylene glycol, tripropylene glycol, tetrapropylene glycol, ethylene glycol, hex Glycol series consisting of ylene glycol and polyethylene glycol, amine series consisting of diethanolamine, triethanolamine, benzene series consisting of toluene, hexane, chlorobenzene, and other N-methyl-2-pyrrolidone, distilled water or mixtures thereof Can be.
  • ethanol methanol, propanol, isopropanol, 1-
  • the conductive ink may be prepared in various ways according to the purpose of the conductive pattern to be finally formed, for example, may include 0.1 to 50 parts by weight of nano metal powder or semiconductor powder based on 100 parts by weight of the solvent.
  • a conductive ink including 0.1 to 5 parts by weight of the nanometal wire may be prepared based on 100 parts by weight of the solvent.
  • the mask 200 is positioned at a rear end of the coating apparatus 100 and is positioned on the substrate 110 to which the conductive ink 120 is applied.
  • the mask 200 is formed in consideration of the conductive pattern to be finally formed, the pattern 210 is formed, the mask 200 selectively blocks the light irradiated from the light generating device 300. .
  • the mask 200 includes a material having low light transmittance, and may be, for example, any one of metal, paper, and cloth.
  • the light generating device 300 is positioned on the mask 200 and irradiates light with the conductive ink 120 applied on the substrate 110 to sinter the conductive ink 120 in a conductive pattern.
  • the light provided from the light generating device 300 is selectively irradiated to the conductive ink 120 by the mask 200, and passes only through the opening pattern 210 formed in the mask 200.
  • the conductive ink 120 is sintered.
  • the light provided by the light generating device 300 is an intense pulsed light (IPL), and the IPL is provided as a surface light source on the substrate 110.
  • IPL intense pulsed light
  • the light provided from the light generating device 300 is provided beyond the width of the substrate 110 and is provided to a predetermined area of the substrate 110.
  • the sintering process is more effectively performed on the substrate 110 continuously provided through the light generating device 300, thereby improving processability and productivity, and performing a sintering process of a large area.
  • the IPL may be applied for a very short process time in milliseconds (msec) unit to induce photo-sintering, the irradiated IPL light is in the intensity of 0.01 J / cm 2 to 100 J / cm 2 , 1 ms To 100 ms.
  • the substrate 110 is continuously supplied by a roll-to-roll continuous process, the light provided from the light generating device 300 is turned on / off with a short irradiation period to irradiate light, thereby providing the substrate (
  • the surface light source is irradiated with respect to a predetermined area of 110, and when the substrate 110 is moved by a certain distance, the surface light source is controlled to repeat the irradiation with the surface light source with respect to the predetermined area, so that the entire area of the substrate 110 is continuous.
  • the pattern forming process may be performed.
  • the pattern forming apparatus 10 is a measuring device for measuring the distance between the light generating device 300 and the substrate 110, the mask 200 or the light generating device ( Vertical movement device for moving the 300 in the vertical direction with respect to the substrate, a sensor (not shown) formed on the mask 200 and a detector (not shown) formed on the substrate 110, and the mask
  • the apparatus 200 may further include a horizontal moving device for moving the light generating device 300 in the horizontal direction with respect to the substrate 110.
  • the distance between the light generating device 300 and the mask 200 or the substrate 110 is greater than or equal to a threshold value, the light irradiated from the light generating device 300 diffuses to the periphery, so that the substrate 110 is sufficiently covered. It does not reach the phase, through which the conductive ink 120 may cause problems such as non-sintering of the conductive ink is generated non-uniformly of the conductive pattern.
  • the measuring device and the vertical moving device maintain the distance between the light generating device 300 and the mask 200 or the substrate 110 to be below a threshold value in order to prevent the problem.
  • the uniformity, accuracy, and precision of the conductive pattern formed through the light sintering may be further improved. have.
  • the adhesive roll 600 is positioned between the light generating device 300 and the recovery roll 500, so that the light irradiated from the light generating device 300 is not transmitted by the mask 200 and is conductive.
  • the conductive ink 120 on which the pattern 121 is not formed is adhered and recovered.
  • the conductive ink 120 in which the conductive pattern 121 is not formed according to the rotation of the adhesive roll 600, is the adhesive tape. May be removed by 601.
  • the conductive pattern 121 sintered by the light irradiated from the light generating device 300 increases the adhesive force with the substrate 110
  • the conductive ink 120 that is not irradiated with light is the substrate 110. Since the adhesive force is weak, it is removed from the substrate 110 in accordance with the adhesive tape 601.
  • FIG. 2 is a schematic diagram showing a pattern forming apparatus using optical sintering according to another embodiment of the present invention.
  • the pattern forming apparatus 11 is substantially the same as the pattern forming apparatus 10 described with reference to FIG. 1 except that the cleaning apparatus 700 further includes, the same reference numerals are used and overlapping descriptions will be provided. Is omitted.
  • the pattern forming apparatus 11 further includes the cleaning apparatus 700.
  • the cleaning device 700 is located at the rear end of the adhesive roll 600 to clean the conductive ink 120 applied to the substrate 110.
  • the cleaning device 700 may be formed in a region where the light is not irradiated among the conductive inks 120 applied on the substrate 110 and not sintered with the conductive pattern 121. Apart from the debonding process in 600), it is further removed.
  • the cleaning device 700 may be removed by washing or wiping the conductive ink using a solvent that dissolves the conductive ink 120.
  • the washing apparatus 700 includes a washing towel (not shown) in which the solvent is buried, and a mechanism part (not shown) for supplying a solvent to the washing towel, thereby contacting the washing towel on the substrate 110.
  • the conductive ink 120 that is not sintered may be removed.
  • the cleaning apparatus 700 may remove the conductive ink 120 by immersing it in a solvent that dissolves the conductive ink 120 and applying ultrasonic waves.
  • the cleaning apparatus 700 includes an ultrasonic cleaner in which a solvent is stored, and the ultrasonic cleaner removes the conductive ink 120 that is not sintered by applying vibration or ultrasonic waves to a solvent containing the substrate 110. can do.
  • the washing apparatus 700 is not shown, but may be installed at the front end of the contact roll 600, or may be installed alone instead of the contact roll 600.
  • a drying apparatus for drying the solvent may be further provided.
  • 3A to 3D are process diagrams illustrating a pattern forming method using the pattern forming apparatus of FIG. 1.
  • 4A to 4D are schematic diagrams illustrating a pattern forming method using the pattern forming apparatus of FIG. 1.
  • 5A and 5B are enlarged views showing states before and after photosintering in region A of FIG. 3B.
  • 6 is a schematic diagram showing an example of light application using a light generating device in the pattern forming apparatus of FIG. 1.
  • the conductive ink (1) is first used on the flexible substrate (110) supplied by the supply roll (400). 120).
  • the constitution and material of the conductive ink 120 are the same as described above, and the coating method of the coating apparatus 100 is the same as described above.
  • the conductive ink 120 is an ink in which wire-shaped nanometal powder is included in a solution.
  • the mask 200 is positioned on the substrate 110 to which the conductive ink 120 is applied.
  • an opening pattern 210 is formed in the mask 200.
  • the irradiated light is IPL, and the light is applied to the substrate 110 having a width equal to or greater than the width of the substrate 110 as a surface light source.
  • the light passing through the opening pattern 210 formed in the mask 200 reaches the conductive ink 120 to sinter the conductive ink 120.
  • the conductive pattern 121 is formed on the upper surface of the substrate 110.
  • the substrate as shown in FIG. 5A may be used.
  • the nanometal powder 122 or the semiconductor powder 122 which was simply applied on the 110, absorbs heat as the light is irradiated, and as shown in FIG. 5B, onto the substrate 110. Are glued.
  • the nanometal powder 122 or the semiconductor powder 122 absorbs heat while being provided with the light, and the powders having heat absorbed into the substrate 110 as shown in FIG. 5B.
  • the conductive ink 120 which is impregnated and thus provided with the light, has improved contact force with the substrate 110 and is sintered into the conductive pattern 121.
  • the powder is not impregnated into the inside of the substrate 110, the bonding force is improved by the fusion with the substrate 110 on the surface of the substrate 110, thereby providing the light
  • the provided conductive ink 120 has improved contact force with the substrate 110 and is sintered into the conductive pattern 121.
  • the substrate 110 is continuously transferred, the light irradiated from the light generating device 300 is provided to the ON / OFF in a relatively short period.
  • the application period of the light provided from the light generating device 300 may be controlled in consideration of the transfer speed of the substrate 110 and the area of the surface light source irradiated to the substrate 110.
  • the light generating device 300 when the substrate 110 is continuously transferred in the direction of the arrow, the light generating device 300 at the first time t 1 .
  • the area A through which the light irradiated from the light reaches the area A is partially overlapped with the area B through which the light irradiated from the light generating device 300 reaches the second time t 2 .
  • the application period of the light irradiated at 300 may be controlled.
  • the application period of the light provided by the light generating device 300 is the edge of the surface light source to which the light provided by the light generating device 300 is irradiated in the period of the surface light source was irradiated with light in the previous period It can be controlled to overlap the edge.
  • the intensity of the surface light source provided from the light generating device 300 is relatively decreased at the edge of the surface light source, light is superimposed at the previous cycle and the next cycle for the region having a relatively low intensity.
  • the conductive ink 120 can be sufficiently sintered even at the edge of the surface light source having a relatively low intensity.
  • an even intensity surface light source is applied over the entire surface of the conductive ink 120 applied on the substrate 110, so that the conductive pattern 121 may be more uniformly formed.
  • the conductive pattern 121 is not irradiated with the light among the conductive inks 120 coated on the substrate 110 through the adhesive roll 600.
  • the conductive ink 120 which has not been sintered, is removed.
  • the adhesive tape 601 wound on the adhesive roll 600 is provided to be adhered to the conductive ink 120, and then detached from the conductive ink 120.
  • the conductive ink 120 which is sintered onto the 110 and is not adhered to may be removed.
  • the conductive ink 120 is removed by the adhesive roll 600, the conductive ink remaining on the substrate 110 through the cleaning apparatus 700. 120 may be further removed.
  • the cleaning device 700 may be removed by washing or wiping the conductive ink 120 using a solvent dissolving the conductive ink 120.
  • the conductive ink 120 may be formed by immersing the substrate 110 in a solvent and applying ultrasonic waves to remove the conductive ink 120.
  • the cleaning device 700 may be located at the front end of the adhesive roll 600 to perform the removal process in advance, the adhesive roll 600 is not provided only the cleaning device 700 alone It may be provided to perform the removal process.
  • the solvent may be dried through a separate drying apparatus.
  • the conductive pattern 121 remains on the substrate 110 to form a pattern, and is recovered by the recovery roll 500.
  • the light is irradiated on the substrate on which the conductive ink is applied to form a conductive pattern, but the sintering of the conductive ink using IPL light, so that the light sintering can be performed in a relatively short time. It is possible to prevent the oxidation of the metal, it is possible to form a conductive pattern or a semiconductor pattern excellent in electrical conductivity on the flexible substrate.
  • the flexible substrate is continuously supplied by the supply roll and the recovery roll, and a conductive pattern may be formed, processability and productivity may be improved.
  • the portion irradiated with the IPL light is sintered, and self-nanoembedding occurs on the substrate, thereby improving adhesion to the substrate, and relatively low adhesion to the portion not irradiated with light. Since it can be easily removed in the removal process described later, it is possible to form an effective pattern on a continuous process of the substrate and can easily form a pattern for a relatively large area.
  • the above process can be easily applied to a flexible substrate including a relatively poor temperature plastic material.
  • the IPL light is provided as a surface light source
  • the pattern formation can be more effectively performed on substrates continuously provided, and the edges of the surface light sources are irradiated to overlap each other, thereby increasing the light intensity at a portion where the light intensity is relatively low. It is possible to form a pattern of uniform quality.
  • the pattern forming apparatus and the pattern forming method may be applied not only to the nano metal powder containing the metal nanoparticles, but also to the semiconductor powder containing the semiconductor particles. It can improve and form.

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  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Inorganic Chemistry (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Provided are a pattern forming device using photo sintering and a pattern forming method using the same, the device comprising a supply roll, an application device, a mask, a light generating device, and a collection roll. The supply roll supplies a flexible substrate. The application device applies conductive ink onto the substrate. The mask is positioned at an upper part of the substrate to which the conductive ink is applied such that a pattern is formed thereon. The light generating device emits light at the conductive ink applied to the substrate at an upper part of the mask so as to form a conductive pattern on the substrate. The collection roll collects the substrate having the conductive pattern formed thereon.

Description

광소결을 이용한 패턴 형성 장치 및 이를 이용한 패턴 형성 방법Pattern Forming Device Using Light Sintering and Pattern Forming Method Using The Same

본 발명은 광소결을 이용한 패턴 형성 장치 및 이를 이용한 패턴 형성 방법에 관한 것으로, 더욱 상세하게는 유연성 기판 상에 도포된 잉크를 광소결 공정을 이용하여 소결시켜 패턴을 형성하는 패턴 형성 장치 및 이를 이용한 패턴 형성 방법에 관한 것이다. The present invention relates to a pattern forming apparatus using optical sintering and a pattern forming method using the same, and more particularly, to a pattern forming apparatus for forming a pattern by sintering ink applied on a flexible substrate using a photo sintering process and using the same It relates to a pattern formation method.

종래 인쇄전자기술에 사용되는 잉크는 금, 은, 구리 등의 금속 분말을 용액에 혼합한 전도성 잉크가 대표적이며, 이러한 금속들은 높은 전기 전도도와 기계적 유연성을 가져, 연성 기판에도 적용되는 장점을 가진다. The ink used in the conventional printed electronic technology is a conductive ink in which metal powders such as gold, silver, and copper are mixed in a solution, and these metals have high electrical conductivity and mechanical flexibility, and thus have advantages in being applied to flexible substrates.

다만, 상기 전도성 잉크를 이용한 패턴 형성 공정에서는, 열소결 공정이 사용되며, 이러한 열소결 공정은, 전도성 잉크에 포함된 금속 분말의 소결을 위해, 섭씨 200 내지 300도의 고온에서 가열한 후 냉각시키는 공정이 적용된다. However, in the pattern forming process using the conductive ink, a heat sintering process is used, and the heat sintering process is a process of cooling after heating at a high temperature of 200 to 300 degrees Celsius for the sintering of the metal powder contained in the conductive ink. This applies.

그러나, 상기와 같은 열소결 공정은 고온 공정으로 공정 시간이 증가하며, 고온에서 사용할 수 없는 고분자(polymer)를 포함한 연성 기판에 적용되기 어려운 문제가 있다. However, the heat sintering process as described above has a problem that the process time increases due to a high temperature process and is difficult to be applied to a flexible substrate including a polymer that cannot be used at a high temperature.

특히, 저렴한 가격 및 높은 전기 전도도로 전도성 잉크로 많이 사용되는 구리 분말의 경우 고온 소결시 대기 분위기에서는 산화가 쉽게 발생하여 전도도가 저하되는 문제가 있어, 비활성 기체 또는 고진공 분위기에서 구리가 산화되지 않도록 소결 공정이 진행되어야 하는바 공정 단가가 증가하는 문제가 있다. In particular, copper powder, which is frequently used as a conductive ink with low price and high electrical conductivity, has a problem in that oxidation easily occurs in an air atmosphere during high temperature sintering, so that conductivity is lowered, so that copper is not oxidized in an inert gas or a high vacuum atmosphere. There is a problem that the process cost increases as the process is to proceed.

나아가, 전도성 잉크를 이용한 전도성 패턴의 제작시, 기판의 전면에 전도성 잉크를 코팅하고, 습식식각, 건식식각, 포토리소그래피 등의 공정이 적용되거나 잉크젯 프린팅 등의 인쇄 방식이 적용되는데, 이러한 공정들이 대면적 기판에 적용하기 어려운 문제가 있어, 공정성이나 생산성을 향상시키지 못하는 단점이 있다. Furthermore, when the conductive pattern is manufactured using the conductive ink, the conductive ink is coated on the entire surface of the substrate, and processes such as wet etching, dry etching, photolithography, or printing methods such as inkjet printing are applied. There is a problem that is difficult to apply to the area substrate, there is a disadvantage that does not improve the processability and productivity.

따라서, 전도성 잉크를 이용한 전도성 패턴의 제작에 있어 상기 문제점들을 해결하면서, 전도성 물질 외에 반도체 물질을 이용한 반도체 패턴 형성에도 적용이 가능한 공정에 대한 연구가 필요한 상황이다. Therefore, while solving the above problems in the production of a conductive pattern using a conductive ink, there is a need for a study on a process that can be applied to the formation of a semiconductor pattern using a semiconductor material in addition to the conductive material.

관련 특허문헌으로 대한민국 등록특허 제10-1077431호, 대한민국 공개특허 제10-2012-0092294호, 대한민국 공개특허 제10-2011-0138963호 등이 있다. Related patent documents include Korean Patent Registration No. 10-1077431, Korean Patent Publication No. 10-2012-0092294, Korean Patent Publication No. 10-2011-0138963, and the like.

이에, 본 발명의 기술적 과제는 이러한 점에서 착안된 것으로 본 발명의 목적은 패턴 형성 공정시간을 줄이면서 유연성 기판에 효과적으로 패턴을 형성할 수 있으며, 산화 안전성을 향상시키고, 대면적의 패턴을 용이하게 형성할 수 있는 광소결을 이용한 패턴 형성 장치에 관한 것이다. Accordingly, the technical problem of the present invention was conceived in this respect, and an object of the present invention is to effectively form a pattern on a flexible substrate while reducing the pattern formation process time, to improve oxidation stability, and to facilitate a large area pattern. A pattern forming apparatus using optical sintering that can be formed.

또한, 본 발명의 다른 목적은 상기 패턴 형성 장치를 이용한 패턴 형성 방법에 관한 것이다. Further, another object of the present invention relates to a pattern forming method using the pattern forming apparatus.

상기한 본 발명의 목적을 실현하기 위한 일 실시예에 따른 패턴 형성 장치는 공급롤, 도포장치, 마스크, 광생성장치 및 회수롤을 포함한다. 상기 공급롤은 유연성 기판을 공급한다. 상기 도포장치는 상기 기판 상에 전도성 잉크를 도포한다. 상기 마스크는 상기 전도성 잉크가 도포된 기판의 상부에 위치하여 패턴이 형성된다. 상기 광생성장치는 상기 마스크의 상부에서 상기 기판 상에 도포된 전도성 잉크로 광을 조사하여 상기 기판 상에 전도성 패턴을 형성한다. 상기 회수롤은 상기 전도성 패턴이 형성된 기판을 회수한다. Pattern forming apparatus according to an embodiment for realizing the object of the present invention described above includes a supply roll, a coating device, a mask, a light generating device and a recovery roll. The feed roll supplies a flexible substrate. The applicator applies conductive ink onto the substrate. The mask is positioned on the substrate to which the conductive ink is applied to form a pattern. The photo growth growth value is irradiated with a conductive ink applied on the substrate from the upper portion of the mask to form a conductive pattern on the substrate. The recovery roll recovers the substrate on which the conductive pattern is formed.

일 실시예에서, 상기 패턴 형성 장치는 상기 광생성장치와 상기 기판 사이의 거리를 측정하는 측정장치, 상기 마스크 또는 상기 광생성장치를 상기 기판에 대하여 수직방향으로 이동시키는 수직이동장치, 상기 마스크에 형성된 마커와 상기 기판에 형성된 마커를 감지하는 감지장치, 및 상기 마스크 또는 상기 광생성장치를 상기 기판에 대하여 수평방향으로 이동시키는 수평이동장치를 더 포함할 수 있다. In one embodiment, the pattern forming apparatus is a measuring device for measuring the distance between the light generating device and the substrate, a vertical moving device for moving the mask or the light generating device in a vertical direction with respect to the substrate, to the mask The apparatus may further include a sensing device configured to detect the formed marker and the marker formed on the substrate, and a horizontal moving apparatus for moving the mask or the light generating device in a horizontal direction with respect to the substrate.

일 실시예에서, 상기 광생성장치에서 조사되는 광은 IPL(intense pulsed light)일 수 있다. In one embodiment, the light irradiated from the light generating device may be an IPL (intense pulsed light).

일 실시예에서, 상기 광생성장치에서 조사되는 IPL은 면광원일 수 있다. In one embodiment, the IPL irradiated by the light generating device may be a surface light source.

일 실시예에서, 상기 기판이 이송됨에 따라, 상기 광생성장치에서 조사되는 면광원의 가장자리는 상기 기판 상의 전도성 잉크에 중첩되도록 조사될 수 있다. In one embodiment, as the substrate is transported, the edge of the surface light source irradiated by the light generating device may be irradiated to overlap the conductive ink on the substrate.

일 실시예에서, 상기 광생성장치와 상기 회수롤 사이에 위치하여, 상기 광이 조사되지 않아 전도성 패턴으로 형성되지 않아 상기 기판에 접착되지 않은 전도성 잉크를 접착하여 회수하는 접착롤을 더 포함할 수 있다. In an embodiment, the light emitting device may further include an adhesive roll positioned between the light generating device and the recovery roll to bond and recover conductive ink that is not bonded to the substrate because the light is not formed to form a conductive pattern. have.

일 실시예에서, 상기 접착롤은 상기 기판에 접착되지 않은 전도성 잉크를 접착하는 점착성 테이프를 제공할 수 있다. In one embodiment, the adhesive roll may provide an adhesive tape for bonding a conductive ink that is not adhered to the substrate.

일 실시예에서, 상기 접착롤의 전단 또는 후단에 위치하여, 상기 기판에 도포된 전도성 잉크를 세척하는 세척장치를 더 포함할 수 있다. In one embodiment, located in the front or rear end of the adhesive roll, it may further include a cleaning device for washing the conductive ink applied to the substrate.

일 실시예에서, 상기 세척장치는, 상기 기판이 담기는 용매를 포함하며, 상기 용매에 초음파 또는 진동을 인가할 수 있다. In one embodiment, the cleaning device includes a solvent in which the substrate is contained, and may apply ultrasonic waves or vibrations to the solvent.

일 실시예에서, 상기 전도성 잉크는, 나노금속 분말 또는 반도체 분말을 포함하는 용액일 수 있다. In one embodiment, the conductive ink may be a solution containing nanometal powder or semiconductor powder.

일 실시예에서, 상기 전도성 잉크에 광이 조사됨에 따라, 상기 나노금속 분말 또는 상기 반도체 분말은 열을 흡수하여 상기 기판에 융합 또는 함침될 수 있다. In one embodiment, as the conductive ink is irradiated with light, the nanometal powder or the semiconductor powder may absorb heat to be fused or impregnated into the substrate.

일 실시예에서, 상기 나노금속 분말은, 와이어(wire), 막대(rod), 구(sphere) 중 어느 하나의 형상일 수 있다. In one embodiment, the nanometal powder, may be in the shape of any one of a wire (wire), rod (sphere).

일 실시예에서, 상기 와이어 형상의 나노금속 분말은 10 nm 내지 100 nm의 직경, 및 1 μm 내지 1 mm의 길이를 가질 수 있다. In one embodiment, the wire-shaped nanometal powder may have a diameter of 10 nm to 100 nm, and a length of 1 μm to 1 mm.

일 실시예에서, 상기 나노금속 분말은, 구리(Cu), 알루미늄(Al), 니켈(Ni), 금(Au), 은(Ag), 백금(Pt) 중 적어도 하나를 포함할 수 있다. In one embodiment, the nanometal powder may include at least one of copper (Cu), aluminum (Al), nickel (Ni), gold (Au), silver (Ag), platinum (Pt).

일 실시예에서, 상기 반도체 분말은, 갈륨-인(GaP), 산화지르코튬(ZrO2), 실리콘(Si), 황화카드뮴(CdS), 이산화티타늄(TiO2), 산화아연(ZnO), 산화철(Fe2O3), 산화텅스텐(WO2), 산화주석(SnO2) 중 적어도 하나를 포함할 수 있다. In one embodiment, the semiconductor powder, gallium-phosphorus (GaP), zirconium oxide (ZrO 2 ), silicon (Si), cadmium sulfide (CdS), titanium dioxide (TiO 2 ), zinc oxide (ZnO), iron oxide It may include at least one of (Fe 2 O 3 ), tungsten oxide (WO 2 ), tin oxide (SnO 2 ).

일 실시예에서, 상기 반도체 분말은, 밴드 갭(band gap)이 3.5 eV 이하일 수 있다. In an embodiment, the semiconductor powder may have a band gap of 3.5 eV or less.

상기한 본 발명의 다른 목적을 실현하기 위한 일 실시예에 따른 패턴 형성 방법에서 공급롤에 의해 공급되는 유연성 기판 상에 전도성 잉크를 도포한다. 상기 전도성 잉크가 도포된 기판의 상부에 마스크를 위치시킨다. 상기 마스크의 상부에서 상기 기판 상에 도포된 전도성 잉크의 피막으로 광을 조사하여 상기 기판 상에 전도성 패턴을 형성한다. 상기 전도성 패턴이 형성된 기판을 회수한다. In the pattern forming method according to an embodiment for realizing another object of the present invention described above, a conductive ink is applied onto a flexible substrate supplied by a supply roll. The mask is positioned on the substrate on which the conductive ink is applied. The conductive pattern is formed on the substrate by irradiating light onto the film of the conductive ink applied on the substrate from the upper portion of the mask. The substrate on which the conductive pattern is formed is recovered.

일 실시예에서, 상기 전도성 패턴이 형성된 기판을 회수하기 전에, 상기 광이 조사되지 않아 전도성 패턴으로 형성되지 않아 상기 기판에 접착되지 않은 전도성 잉크를 제거하는 단계를 더 포함할 수 있다. In one embodiment, before recovering the substrate on which the conductive pattern is formed, the method may further include removing conductive ink that is not formed as a conductive pattern because the light is not irradiated and is not adhered to the substrate.

일 실시예에서, 상기 전도성 잉크를 제거하는 단계에서, 점착성 테이프로 상기 전도성 잉크를 제거할 수 있다. In an embodiment, in the removing of the conductive ink, the conductive ink may be removed with an adhesive tape.

일 실시예에서, 상기 전도성 잉크를 제거하는 단계에서, 상기 전도성 잉크를 용해하는 용매를 사용하여 상기 전도성 잉크를 와싱(washing)하거나 와이핑(wiping)하여 제거할 수 있다. In an embodiment, in the removing of the conductive ink, the conductive ink may be removed by washing or wiping the conductive ink using a solvent dissolving the conductive ink.

일 실시예에서, 상기 전도성 잉크를 제거하는 단계에서, 상기 전도성 잉크를 용해하는 용매에 침지시키고 초음파를 인가하여 상기 전도성 잉크를 제거할 수 있다. In an embodiment, in the removing of the conductive ink, the conductive ink may be removed by immersing in a solvent for dissolving the conductive ink and applying ultrasonic waves.

일 실시예에서, 상기 전도성 잉크를 도포하는 단계에서, 상기 전도성 잉크는 바 코팅(bar coating), 스핀 코팅(spin coating), 슬롯 다이 코팅(slot die coating), 그라비아 코팅(gravure coating), 스프레이 코팅(spray coating), 딥 코팅(dip coating) 중 어느 하나로 도포될 수 있다. In one embodiment, in the step of applying the conductive ink, the conductive ink is bar coating (spin coating), spin coating (slot coating), slot die coating (gravure coating), spray coating (gravure coating), spray coating (spray coating) or dip coating (dip coating) can be applied.

일 실시예에서, 상기 조사되는 광은 0.01 J/cm2 내지 100 J/cm2의 강도로, 1 ms 내지 100 ms 동안 조사될 수 있다. In one embodiment, the irradiated light may be irradiated for 1 ms to 100 ms at an intensity of 0.01 J / cm 2 to 100 J / cm 2 .

본 발명의 실시예들에 의하면, 전도성 잉크가 도포된 기판 상에 광이 조사되어 전도성 패턴을 형성하되, IPL 광을 이용하여 전도성 잉크를 소결시키므로, 상대적으로 단시간에 광소결을 수행할 수 있어 금속의 산화를 방지하고, 전기전도성이 우수한 전도성 패턴 또는 반도체 패턴을 유연성 기판 상에 형성할 수 있다. According to embodiments of the present invention, the light is irradiated on the substrate on which the conductive ink is applied to form a conductive pattern, and the conductive ink is sintered by using IPL light, so that light sintering can be performed in a relatively short time. It is possible to form a conductive pattern or a semiconductor pattern having excellent electrical conductivity on the flexible substrate to prevent oxidation.

특히, 상기 유연성 기판은 공급롤과 회수롤에 의해 연속적으로 공급되며 전도성 패턴이 형성될 수 있으므로, 공정성 및 생산성을 향상시킬 수 있다. In particular, since the flexible substrate is continuously supplied by the supply roll and the recovery roll, and a conductive pattern may be formed, processability and productivity may be improved.

또한, 상기 IPL 광을 조사하여 광이 조사된 부분만 소결되며, 기판 상에 자가 나노결합(self-nanoembedding)이 발생하므로 기판과의 접착력이 향상되고, 광이 조사되지 않은 부분은 상대적으로 낮은 접착력으로 후술되는 제거공정에서 쉽게 제거될 수 있으므로, 기판의 연속 공정상에서 효과적인 패턴 형성이 가능하며 상대적으로 대면적에 대하여도 용이하게 패턴을 형성할 수 있다. In addition, only the portion irradiated with the IPL light is sintered, and self-nanoembedding occurs on the substrate, thereby improving adhesion to the substrate, and relatively low adhesion to the portion not irradiated with light. Since it can be easily removed in the removal process described later, it is possible to form an effective pattern on a continuous process of the substrate and can easily form a pattern for a relatively large area.

또한, 상기 공정은, 상대적으로 온도에 열악한 플라스틱 소재를 포함하는 유연성 기판에도 용이하게 적용할 수 있다. In addition, the above process can be easily applied to a flexible substrate including a relatively poor temperature plastic material.

특히, 상기 IPL 광은 면광원으로 제공되므로 연속적으로 제공되는 기판에 보다 효과적으로 패턴 형성을 수행할 수 있으며, 면광원의 가장자리가 서로 중첩되도록 조사됨으로써 상대적으로 광의 세기가 약한 부분에서 광의 세기를 증가시켜 균일한 품질의 패턴을 형성할 수 있다. In particular, since the IPL light is provided as a surface light source, the pattern formation can be more effectively performed on substrates continuously provided, and the edges of the surface light sources are irradiated to overlap each other, thereby increasing the light intensity at a portion where the light intensity is relatively low. It is possible to form a pattern of uniform quality.

또한, 상기 패턴 형성 장치 및 패턴 형성방법은, 금속 나노 입자가 포함된 나노금속 분말뿐만 아니라, 반도체 입자가 포함된 반도체 분말에도 적용될 수 있으므로, 금속 패턴은 물론 반도체 패턴도 대면적으로 공정성 및 생산성을 향상시켜 형성할 수 있다. In addition, the pattern forming apparatus and the pattern forming method may be applied not only to the nano metal powder containing the metal nanoparticles, but also to the semiconductor powder containing the semiconductor particles. It can improve and form.

도 1은 본 발명의 일 실시예에 의한 광소결을 이용한 패턴 형성 장치를 도시한 모식도이다. 1 is a schematic diagram showing a pattern forming apparatus using light sintering according to an embodiment of the present invention.

도 2는 본 발명의 다른 실시예에 의한 광소결을 이용한 패턴 형성 장치를 도시한 모식도이다. 2 is a schematic diagram showing a pattern forming apparatus using optical sintering according to another embodiment of the present invention.

도 3a 내지 도 3d는 도 1의 패턴 형성 장치를 이용한 패턴 형성 방법을 도시한 공정도들이다. 3A to 3D are process diagrams illustrating a pattern forming method using the pattern forming apparatus of FIG. 1.

도 4a 내지 도 4d는 도 1의 패턴 형성 장치를 이용한 패턴 형성 방법을 도시한 모식도들이다. 4A to 4D are schematic diagrams illustrating a pattern forming method using the pattern forming apparatus of FIG. 1.

도 5a 및 도 5b는 도 3b의 A 영역에서 광소결의 전과 후의 상태를 도시한 확대도들이다. 5A and 5B are enlarged views showing states before and after photosintering in region A of FIG. 3B.

도 6은 도 1의 패턴 형성 장치에서 광생성장치를 이용한 광인가의 예를 도시한 모식도이다. 6 is a schematic diagram showing an example of light application using a light generating device in the pattern forming apparatus of FIG. 1.

*부호의 설명* Description of the sign

10, 11 : 패턴 형성 장치10, 11: pattern forming apparatus

100 : 도포장치 110 : 기판100: coating apparatus 110: substrate

120 : 전도성 잉크 121 : 전도성 패턴120: conductive ink 121: conductive pattern

200 : 마스크 210 : 패턴200: mask 210: pattern

300 : 광생성장치 400 : 공급롤300: light generating device 400: supply roll

500 : 회수롤 600 : 접착롤500: recovery roll 600: adhesive roll

601 : 점착성 테이프 700 : 세척장치601: adhesive tape 700: cleaning device

본 발명은 다양한 변경을 가할 수 있고 여러 가지 형태를 가질 수 있는 바, 실시예들을 본문에 상세하게 설명하고자 한다. 그러나 이는 본 발명을 특정한 개시 형태에 대해 한정하려는 것이 아니며, 본 발명의 사상 및 기술 범위에 포함되는 모든 변경, 균등물 내지 대체물을 포함하는 것으로 이해되어야 한다. 각 도면을 설명하면서 유사한 참조부호를 유사한 구성요소에 대해 사용하였다. 제1, 제2 등의 용어는 다양한 구성요소들을 설명하는데 사용될 수 있지만, 상기 구성요소들은 상기 용어들에 의해 한정되어서는 안 된다. As the inventive concept allows for various changes and numerous modifications, the embodiments will be described in detail in the text. However, this is not intended to limit the present invention to a specific disclosed form, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the drawings, similar reference numerals are used for similar elements. Terms such as first and second may be used to describe various components, but the components should not be limited by the terms.

상기 용어들은 하나의 구성요소를 다른 구성요소로부터 구별하는 목적으로만 사용된다. 본 출원에서 사용한 용어는 단지 특정한 실시예를 설명하기 위해 사용된 것으로, 본 발명을 한정하려는 의도가 아니다. 단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한, 복수의 표현을 포함한다. The terms are used only for the purpose of distinguishing one component from another. The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise.

본 출원에서, "포함하다" 또는 "이루어진다" 등의 용어는 명세서상에 기재된 특징, 숫자, 단계, 동작, 구성요소, 부분품 또는 이들을 조합한 것이 존재함을 지정하려는 것이지, 하나 또는 그 이상의 다른 특징들이나 숫자, 단계, 동작, 구성요소, 부분품 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다. In this application, the terms "comprise" or "consist of" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, parts, or combinations thereof.

다르게 정의되지 않는 한, 기술적이거나 과학적인 용어를 포함해서 여기서 사용되는 모든 용어들은 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에 의해 일반적으로 이해되는 것과 동일한 의미를 가지고 있다. 일반적으로 사용되는 사전에 정의되어 있는 것과 같은 용어들은 관련 기술의 문맥 상 가지는 의미와 일치하는 의미를 가지는 것으로 해석되어야 하며, 본 출원에서 명백하게 정의하지 않는 한, 이상적이거나 과도하게 형식적인 의미로 해석되지 않는다.Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

이하, 첨부한 도면들을 참조하여, 본 발명의 바람직한 실시예를 보다 상세하게 설명하고자 한다.Hereinafter, with reference to the accompanying drawings, it will be described in detail a preferred embodiment of the present invention.

도 1은 본 발명의 일 실시예에 의한 광소결을 이용한 패턴 형성 장치를 도시한 모식도이다. 1 is a schematic diagram showing a pattern forming apparatus using light sintering according to an embodiment of the present invention.

본 실시예에 의한 패턴 형성 장치(10)는 도포장치(100), 마스크(200), 광생성장치(300), 공급롤(400), 회수롤(500) 및 접착롤(600)을 포함한다. The pattern forming apparatus 10 according to the present embodiment includes a coating device 100, a mask 200, a light generating device 300, a supply roll 400, a recovery roll 500, and an adhesive roll 600. .

상기 공급롤(400)은 기판(110)이 감겨진 상태에서 상기 기판(110)을 공급하며, 상기 회수롤(500)은 상기 공급롤(400)과 소정거리 이격되어 패턴이 모두 형성된 상기 기판(110)을 감으면서 회수한다. The supply roll 400 supplies the substrate 110 in a state in which the substrate 110 is wound, and the recovery roll 500 is spaced apart from the supply roll 400 by a predetermined distance to form all of the substrates ( Recover it while winding 110).

그리하여, 상기 패턴 형성 장치(10)는 상기 기판(110)을 연속적으로 공급 및 회수하는 롤투롤 인쇄 장치를 구성하게 된다. Thus, the pattern forming apparatus 10 constitutes a roll-to-roll printing apparatus for continuously supplying and recovering the substrate 110.

이 경우, 상기 기판(110)은 유연성 기판이며, 플라스틱 또는 합성 고무 재질도 포함할 수 있다. 예를 들어, 상기 기판(110)은 폴리카보네이트(polycarbonate), 폴리에틸렌테레프탈레이트(polyethylene terephthalate), 폴리이미드(polyimide)일 수 있다. In this case, the substrate 110 is a flexible substrate, and may also include a plastic or synthetic rubber material. For example, the substrate 110 may be polycarbonate, polyethylene terephthalate, or polyimide.

상기 도포장치(100)는 상기 공급롤(400)의 후단에 위치하여 상기 기판(110) 상에 전도성 잉크(120)를 도포한다. The coating device 100 is positioned at the rear end of the supply roll 400 to apply the conductive ink 120 on the substrate 110.

이 경우, 상기 도포장치(100)는 상기 전도성 잉크(120)를 바 코팅(bar coating), 스핀 코팅(spin coating), 슬롯 다이 코팅(slot die coating), 그라비아 코팅(gravure coating), 스프레이 코팅(spray coating), 딥 코팅(dip coating) 중 어느 하나의 공정으로 도포한다. In this case, the applicator 100 may apply the conductive ink 120 to bar coating, spin coating, slot die coating, gravure coating, and spray coating. It is applied by one of spray coating and dip coating.

이를 위해, 상기 도포장치(100)는 상기 기판(110)을 향해 상기 전도성 잉크(120)를 분사할 수 있는 인젝터를 포함할 수 있다. To this end, the coating device 100 may include an injector capable of injecting the conductive ink 120 toward the substrate 110.

한편, 본 실시예에서 상기 전도성 잉크(120)는, 나노금속 분말 또는 반도체 분말과 용액이 혼합된 잉크일 수 있다. Meanwhile, in the present embodiment, the conductive ink 120 may be ink in which nanometal powder or semiconductor powder and a solution are mixed.

이 경우, 상기 나노금속 분말은 와이어(wire), 막대(rod), 구(sphere) 중 어느 하나의 형상일 수 있으며, 상기 와이어 형상의 나노금속 분말은 10 nm 내지 100 nm의 직경, 및 1 μm 내지 1 mm의 길이를 가질 수 있다. In this case, the nanometal powder may be in the shape of any one of a wire, rod, and sphere, and the wire-shaped nanometal powder may have a diameter of 10 nm to 100 nm, and 1 μm. It may have a length of 1 mm.

또한, 상기 와이어 형상의 나노금속 분말은 10 내지 10,000 범위의 종횡비를 가질 수 있으며, 상기 와이어 형상의 단면은 다각형, 타원형, 반원형 등 다양한 형상을 가질 수 있다. In addition, the wire-shaped nanometal powder may have an aspect ratio in the range of 10 to 10,000, the cross-section of the wire shape may have a variety of shapes, such as polygonal, elliptical, semicircular.

나아가, 상기 나노금속 분말은 조사되는 광을 통해 열을 흡수하여 상기 기판(110) 상에 접착성이 향상되는 구조이면 상기 예시한 것 외의 다양한 형상일 수 있다. Furthermore, the nanometal powder may have various shapes other than those illustrated above as long as the nanometal powder absorbs heat through irradiated light to improve adhesiveness on the substrate 110.

예를 들어, 상기 나노금속 분말은 구리(Cu), 알루미늄(Al), 니켈(Ni), 금(Au), 은(Ag), 백금(Pt) 중 적어도 하나를 포함할 수 있다. For example, the nanometal powder may include at least one of copper (Cu), aluminum (Al), nickel (Ni), gold (Au), silver (Ag), and platinum (Pt).

한편, 상기 반도체 분말은 갈륨-인(GaP), 산화지르코튬(ZrO2), 실리콘(Si), 황화카드뮴(CdS), 이산화티타늄(TiO2), 산화아연(ZnO), 산화철(Fe2O3), 산화텅스텐(WO2), 산화주석(SnO2) 중 적어도 하나를 포함할 수 있으며, 이 경우, 밴드 갭(band gap)이 3.5 eV 이하일 수 있다. The semiconductor powder may be gallium-phosphorus (GaP), zirconium oxide (ZrO 2 ), silicon (Si), cadmium sulfide (CdS), titanium dioxide (TiO 2 ), zinc oxide (ZnO), or iron oxide (Fe 2 O). 3 ), tungsten oxide (WO 2 ), tin oxide (SnO 2 ), and in this case, a band gap may be 3.5 eV or less.

또한, 상기 나노금속 분말 또는 상기 반도체 분말이 혼합되는 용액은 분산제 및 용매를 포함할 수 있다. In addition, the solution in which the nanometal powder or the semiconductor powder is mixed may include a dispersant and a solvent.

상기 분산제는, 예를 들어 폴리-N-비닐피롤리돈, 폴리비닐알콜, 다중산(polyacid) 또는 이들의 유도제일 수 있다. The dispersant may be, for example, poly-N-vinylpyrrolidone, polyvinyl alcohol, polyacid or derivatives thereof.

또한, 상기 용매는 나노 금속 분말 또는 반도체 분말을 분산시킬 수 있는 통상적인 다양한 용매가 제한 없이 사용될 수 있으며, 예를 들어, 에탄올, 메탄올, 프로판올, 이소프로판올, 1-부탄올, 2-부탄올, 이소부탄올, 헥산올 및 옥탄올, 2-메톡시에톡시에탄올로 이루어진 알코올 계열, 디에틸렌 글리콜, 프로필렌 글리콜, 트리에틸렌 글리콜, 테트라에틸렌 글리콜, 디포로필렌 글리콜, 트리프로필렌 글리콜, 테트라프로필렌 글리콜, 에틸렌 글리콜, 헥실렌 글리콜 및 폴리에틸렌 글리콜로 이루어진 글리콜 계열, 디에탄올아민, 트리에탄올아민으로 이루어진 아민 계열, 톨루엔, 헥산, 클로로 벤젠으로 이루어진 벤젠 계열, 그 외 N-메틸-2-피롤리돈, 증류수 또는 이들의 혼합물일 수 있다. In addition, the solvent may be used without limitation a variety of conventional solvents capable of dispersing nano metal powder or semiconductor powder, for example, ethanol, methanol, propanol, isopropanol, 1-butanol, 2-butanol, isobutanol, Alcohol series consisting of hexanol and octanol, 2-methoxyethoxyethanol, diethylene glycol, propylene glycol, triethylene glycol, tetraethylene glycol, diporoethylene glycol, tripropylene glycol, tetrapropylene glycol, ethylene glycol, hex Glycol series consisting of ylene glycol and polyethylene glycol, amine series consisting of diethanolamine, triethanolamine, benzene series consisting of toluene, hexane, chlorobenzene, and other N-methyl-2-pyrrolidone, distilled water or mixtures thereof Can be.

한편, 상기 전도성 잉크는 최종적으로 형성되는 전도성 패턴의 용도에 따라 다양하게 제조될 수 있으며, 예를 들어, 용매 100 중량부를 기준으로 0.1 내지 50 중량부의 나노 금속 분말 또는 반도체 분말을 포함할 수 있다. 예를 들어, 나노금속 와이어 형태의 분말로 투명전극 패턴을 제조하는 경우 용매 100 중량부 기준으로 0.1 내지 5 중량부의 나노금속 와이어를 포함하는 전도성 잉크를 제조할 수 있다. On the other hand, the conductive ink may be prepared in various ways according to the purpose of the conductive pattern to be finally formed, for example, may include 0.1 to 50 parts by weight of nano metal powder or semiconductor powder based on 100 parts by weight of the solvent. For example, when the transparent electrode pattern is manufactured from the powder in the form of nanometal wire, a conductive ink including 0.1 to 5 parts by weight of the nanometal wire may be prepared based on 100 parts by weight of the solvent.

상기 마스크(200)는 상기 도포장치(100)보다 후단에 위치하여, 상기 전도성 잉크(120)가 도포된 상기 기판(110)의 상부에 위치한다. The mask 200 is positioned at a rear end of the coating apparatus 100 and is positioned on the substrate 110 to which the conductive ink 120 is applied.

이 경우, 상기 마스크(200)는 최종적으로 형성하고자 하는 전도성 패턴을 고려하여, 패턴(210)이 형성되며, 상기 마스크(200)는 상기 광생성장치(300)에서 조사되는 광을 선택적으로 차단한다. In this case, the mask 200 is formed in consideration of the conductive pattern to be finally formed, the pattern 210 is formed, the mask 200 selectively blocks the light irradiated from the light generating device 300. .

이 경우, 상기 마스크(200)는 광투과성이 낮은 물질을 포함하며, 예를 들어, 금속, 종이, 천 중 어느 하나일 수 있다. In this case, the mask 200 includes a material having low light transmittance, and may be, for example, any one of metal, paper, and cloth.

상기 광생성장치(300)는 상기 마스크(200)의 상부에 위치하여 상기 기판(110) 상에 도포된 전도성 잉크(120)로 광을 조사하여 상기 전도성 잉크(120)를 전도성 패턴으로 소결한다. The light generating device 300 is positioned on the mask 200 and irradiates light with the conductive ink 120 applied on the substrate 110 to sinter the conductive ink 120 in a conductive pattern.

이 경우, 상기 광생성장치(300)로부터 제공되는 광은 상기 마스크(200)에 의해 선택적으로 상기 전도성 잉크(120)로 조사되며, 상기 마스크(200)에 형성된 개구 패턴(210)만을 통과하여 상기 전도성 잉크(120)를 소결하게 된다. In this case, the light provided from the light generating device 300 is selectively irradiated to the conductive ink 120 by the mask 200, and passes only through the opening pattern 210 formed in the mask 200. The conductive ink 120 is sintered.

이 경우, 상기 광생성장치(300)에서 제공되는 광은, IPL(intense pulsed light)이며, 상기 IPL이 상기 기판(110) 상으로 면광원으로 제공된다. In this case, the light provided by the light generating device 300 is an intense pulsed light (IPL), and the IPL is provided as a surface light source on the substrate 110.

즉, 상기 광생성장치(300)로부터 제공되는 광은, 도시되지는 않았으나, 상기 기판(110)의 폭 이상으로 제공되어, 상기 기판(110)의 소정의 면적으로 제공된다. That is, although not shown, the light provided from the light generating device 300 is provided beyond the width of the substrate 110 and is provided to a predetermined area of the substrate 110.

그리하여, 상기 광생성장치(300)를 통해 연속적으로 제공되는 기판(110)에 대하여 보다 효과적으로 소결 공정이 수행되며, 이에 따라 공정성 및 생산성이 향상되고, 대면적의 소결 공정을 수행할 수 있다. Thus, the sintering process is more effectively performed on the substrate 110 continuously provided through the light generating device 300, thereby improving processability and productivity, and performing a sintering process of a large area.

한편, 상기 IPL은 밀리세크(msec) 단위의 매우 짧은 공정 시간 동안 인가되어 광소결을 유도할 수 있으며, 상기 조사되는 IPL 광은 0.01 J/cm2 내지 100 J/cm2의 강도로, 1 ms 내지 100 ms 동안 조사될 수 있다. On the other hand, the IPL may be applied for a very short process time in milliseconds (msec) unit to induce photo-sintering, the irradiated IPL light is in the intensity of 0.01 J / cm 2 to 100 J / cm 2 , 1 ms To 100 ms.

즉, 본 실시예에서 상기 기판(110)은 롤투롤 연속 공정에 의해 연속적으로 공급되므로, 상기 광생성장치(300)에서 제공되는 광은 짧은 조사 주기로 ON/OFF 되어 광을 조사함으로써, 상기 기판(110)의 일정 면적에 대하여 면광원이 조사되고, 상기 기판(110)이 일정 거리 이동되면 또 일정 면적에 대하여 면광원이 조사되는 것을 반복하도록 제어되어, 상기 기판(110)의 전체 면적에 대하여 연속적으로 패턴 형성 공정을 수행할 수 있다. That is, in the present embodiment, since the substrate 110 is continuously supplied by a roll-to-roll continuous process, the light provided from the light generating device 300 is turned on / off with a short irradiation period to irradiate light, thereby providing the substrate ( The surface light source is irradiated with respect to a predetermined area of 110, and when the substrate 110 is moved by a certain distance, the surface light source is controlled to repeat the irradiation with the surface light source with respect to the predetermined area, so that the entire area of the substrate 110 is continuous. The pattern forming process may be performed.

한편, 도 1에는 도시하지는 않았으나, 상기 패턴 형성 장치(10)는 상기 광생성장치(300)와 상기 기판(110) 사이의 거리를 측정하는 측정장치, 상기 마스크(200) 또는 상기 광생성장치(300)를 상기 기판에 대하여 수직방향으로 이동시키는 수직이동장치, 상기 마스크(200)에 형성된 마커(미도시)와 상기 기판(110)에 형성된 마커(미도시)를 감지하는 감지장치, 및 상기 마스크(200) 또는 상기 광생성장치(300)를 상기 기판(110)에 대하여 수평방향으로 이동시키는 수평이동장치를 더 포함할 수 있다. On the other hand, although not shown in Figure 1, the pattern forming apparatus 10 is a measuring device for measuring the distance between the light generating device 300 and the substrate 110, the mask 200 or the light generating device ( Vertical movement device for moving the 300 in the vertical direction with respect to the substrate, a sensor (not shown) formed on the mask 200 and a detector (not shown) formed on the substrate 110, and the mask The apparatus 200 may further include a horizontal moving device for moving the light generating device 300 in the horizontal direction with respect to the substrate 110.

상기 광생성장치(300)와 상기 마스크(200) 또는 상기 기판(110) 사이의 거리가 임계값 이상인 경우, 상기 광생성장치(300)에서 조사되는 광이 주변으로 확산되므로 충분히 상기 기판(110) 상으로 도달하지 못하게 되며, 이를 통해 상기 전도성 잉크(120)가 광소결이 발생하지 않아 전도성 패턴의 불균일하게 생성되는 등의 문제가 발생할 수 있다. When the distance between the light generating device 300 and the mask 200 or the substrate 110 is greater than or equal to a threshold value, the light irradiated from the light generating device 300 diffuses to the periphery, so that the substrate 110 is sufficiently covered. It does not reach the phase, through which the conductive ink 120 may cause problems such as non-sintering of the conductive ink is generated non-uniformly of the conductive pattern.

따라서, 상기 측정장치 및 상기 수직이동장치는 상기 문제를 방지하기 위해 상기 광생성장치(300)와 상기 마스크(200) 또는 상기 기판(110) 사이의 거리를 임계값 이하가 되도록 유지한다. Accordingly, the measuring device and the vertical moving device maintain the distance between the light generating device 300 and the mask 200 or the substrate 110 to be below a threshold value in order to prevent the problem.

또한, 상기 감지장치를 통해, 상기 마스크(200)에 형성된 마커와 상기 기판(110)에 형성된 마커를 정렬하여, 상기 광소결을 통해 형성되는 전도성 패턴의 균일성, 정확성 및 정밀성을 보다 향상시킬 수 있다. In addition, by aligning the marker formed on the mask 200 and the marker formed on the substrate 110 through the sensing device, the uniformity, accuracy, and precision of the conductive pattern formed through the light sintering may be further improved. have.

상기 접착롤(600)은 상기 광생성장치(300)와 상기 회수롤(500)의 사이에 위치하여, 상기 광생성장치(300)에서 조사된 광이 상기 마스크(200)에 의해 투과되지 않아 전도성 패턴(121)이 형성되지 않은 전도성 잉크(120)를 접착하여 회수한다. The adhesive roll 600 is positioned between the light generating device 300 and the recovery roll 500, so that the light irradiated from the light generating device 300 is not transmitted by the mask 200 and is conductive. The conductive ink 120 on which the pattern 121 is not formed is adhered and recovered.

이 경우, 상기 접착롤(600)에는 점착성 테이프(601)가 감긴 상태에서, 상기 접착롤(600)의 회전에 따라 상기 전도성 패턴(121)이 형성되지 않은 상기 전도성 잉크(120)가 상기 점착성 테이프(601)에 의해 제거될 수 있다. In this case, in the state in which the adhesive tape 601 is wound on the adhesive roll 600, the conductive ink 120, in which the conductive pattern 121 is not formed according to the rotation of the adhesive roll 600, is the adhesive tape. May be removed by 601.

즉, 상기 광생성장치(300)로부터 조사된 광에 의해 소결된 전도성 패턴(121)은 상기 기판(110)과의 접착력이 증가하지만, 광이 조사되지 않은 전도성 잉크(120)는 상기 기판(110)과의 접착력이 약하므로 상기 점착성 테이프(601)와의 접착에 따라 상기 기판(110)으로부터 제거된다. That is, although the conductive pattern 121 sintered by the light irradiated from the light generating device 300 increases the adhesive force with the substrate 110, the conductive ink 120 that is not irradiated with light is the substrate 110. Since the adhesive force is weak, it is removed from the substrate 110 in accordance with the adhesive tape 601.

도 2는 본 발명의 다른 실시예에 의한 광소결을 이용한 패턴 형성 장치를 도시한 모식도이다. 2 is a schematic diagram showing a pattern forming apparatus using optical sintering according to another embodiment of the present invention.

본 실시예에 의한 패턴 형성 장치(11)는 세척장치(700)를 더 포함하는 것을 제외하고는 도 1에서 설명한 패턴 형성 장치(10)와 실질적으로 동일하므로, 동일한 참조번호를 사용하고 중복되는 설명은 생략한다. Since the pattern forming apparatus 11 according to the present embodiment is substantially the same as the pattern forming apparatus 10 described with reference to FIG. 1 except that the cleaning apparatus 700 further includes, the same reference numerals are used and overlapping descriptions will be provided. Is omitted.

도 2를 참조하면, 상기 패턴 형성 장치(11)는 상기 세척장치(700)를 더 포함한다. Referring to FIG. 2, the pattern forming apparatus 11 further includes the cleaning apparatus 700.

상기 세척장치(700)는 상기 접착롤(600)의 후단에 위치하여, 상기 기판(110)에 도포된 전도성 잉크(120)를 세척한다. The cleaning device 700 is located at the rear end of the adhesive roll 600 to clean the conductive ink 120 applied to the substrate 110.

상기 세척장치(700)는 상기 기판(110) 상에 도포된 전도성 잉크(120) 중, 상기 광이 조사되지 않은 영역에 형성되어 전도성 패턴(121)으로 소결되지 않은 전도성 잉크를, 상기 접촉롤(600)에서의 접착 제거 공정과 별도로, 추가로 제거한다. The cleaning device 700 may be formed in a region where the light is not irradiated among the conductive inks 120 applied on the substrate 110 and not sintered with the conductive pattern 121. Apart from the debonding process in 600), it is further removed.

이 경우, 상기 세척장치(700)는, 상기 전도성 잉크(120)를 용해하는 용매를 사용하여 상기 전도성 잉크를 와싱(washing)하거나 또는 와이핑(wiping)하여 제거할 수 있다. In this case, the cleaning device 700 may be removed by washing or wiping the conductive ink using a solvent that dissolves the conductive ink 120.

즉, 상기 세척장치(700)는 상기 용매가 묻혀진 세척타올(미도시)과, 세척타올로 용매를 공급하는 기구부(미도시)를 포함하여, 상기 세척타올을 상기 기판(110) 상으로 접촉시켜 소결되지 않은 상기 전도성 잉크(120)를 제거할 수 있다. That is, the washing apparatus 700 includes a washing towel (not shown) in which the solvent is buried, and a mechanism part (not shown) for supplying a solvent to the washing towel, thereby contacting the washing towel on the substrate 110. The conductive ink 120 that is not sintered may be removed.

이와 달리, 상기 세척장치(700)는 상기 전도성 잉크(120)를 용해하는 용매에 침지시키고 초음파를 인가하여 상기 전도성 잉크(120)를 제거할 수도 있다. Alternatively, the cleaning apparatus 700 may remove the conductive ink 120 by immersing it in a solvent that dissolves the conductive ink 120 and applying ultrasonic waves.

즉, 상기 세척장치(700)는 용매가 저장된 초음파 세척기를 포함하여, 상기 초음파 세척기는 상기 기판(110)이 담겨진 용매에 진동 또는 초음파를 인가하여, 상기 광소결되지 못한 전도성 잉크(120)를 제거할 수 있다. That is, the cleaning apparatus 700 includes an ultrasonic cleaner in which a solvent is stored, and the ultrasonic cleaner removes the conductive ink 120 that is not sintered by applying vibration or ultrasonic waves to a solvent containing the substrate 110. can do.

이 경우, 상기 세척장치(700)는 도시하지는 않았으나, 상기 접촉롤(600)의 전단에도 설치되거나, 상기 접촉롤(600)을 대신하여 단독으로 설치될 수도 있다. In this case, the washing apparatus 700 is not shown, but may be installed at the front end of the contact roll 600, or may be installed alone instead of the contact roll 600.

나아가, 상기 세척장치(700)의 후단에는 도시하지는 않았으나, 용매를 건조시키는 건조장치가 추가로 구비될 수 있다. Further, although not shown in the rear end of the washing apparatus 700, a drying apparatus for drying the solvent may be further provided.

이하에서는, 상기 패턴 형성장치를 이용하여 패턴을 형성하는 패턴 형성방법에 대하여 상세히 설명한다. Hereinafter, a pattern forming method for forming a pattern using the pattern forming apparatus will be described in detail.

도 3a 내지 도 3d는 도 1의 패턴 형성장치를 이용한 패턴 형성 방법을 도시한 공정도들이다. 도 4a 내지 도 4d는 도 1의 패턴 형성 장치를 이용한 패턴 형성 방법을 도시한 모식도들이다. 도 5a 및 도 5b는 도 3b의 A 영역에서 광소결의 전과 후의 상태를 도시한 확대도들이다. 도 6은 도 1의 패턴 형성 장치에서 광생성장치를 이용한 광인가의 예를 도시한 모식도이다. 3A to 3D are process diagrams illustrating a pattern forming method using the pattern forming apparatus of FIG. 1. 4A to 4D are schematic diagrams illustrating a pattern forming method using the pattern forming apparatus of FIG. 1. 5A and 5B are enlarged views showing states before and after photosintering in region A of FIG. 3B. 6 is a schematic diagram showing an example of light application using a light generating device in the pattern forming apparatus of FIG. 1.

도 1, 도 3a 및 도 4a를 참조하면, 상기 패턴 형성 방법에서, 우선 상기 공급롤(400)에 의해 공급되는 상기 유연성 기판(110) 상에 상기 도포장치(100)를 이용하여 상기 전도성 잉크(120)를 도포한다. 1, 3A and 4A, in the pattern forming method, the conductive ink (1) is first used on the flexible substrate (110) supplied by the supply roll (400). 120).

상기 전도성 잉크(120)의 구성 및 재료에 대하여는 앞서 설명한 바와 같으며, 상기 도포장치(100)에서의 도포 방법에 대하여도 앞서 설명한 바와 같다. The constitution and material of the conductive ink 120 are the same as described above, and the coating method of the coating apparatus 100 is the same as described above.

한편, 도 4a에서는 상기 전도성 잉크(120)가 와이어 형상의 나노금속 분말이 용액에 포함된 잉크인 경우를 예를 들어 도시하였다. 4A illustrates an example in which the conductive ink 120 is an ink in which wire-shaped nanometal powder is included in a solution.

이 후, 도 1, 도 3b 및 도 4b를 참조하면, 상기 패턴 형성 방법에서, 상기 전도성 잉크(120)가 도포된 상기 기판(110)의 상부에 마스크(200)를 위치시킨다. 1, 3B and 4B, in the pattern forming method, the mask 200 is positioned on the substrate 110 to which the conductive ink 120 is applied.

이 경우, 상기 마스크(200)에는 개구 패턴(210)이 형성된다. In this case, an opening pattern 210 is formed in the mask 200.

이 후, 상기 마스크(200)의 상부에 위치한 상기 광생성장치(300)로부터 상기 기판(110) 상에 도포된 상기 전도성 잉크(120)로 광을 조사한다. Thereafter, light is irradiated to the conductive ink 120 applied on the substrate 110 from the photo-generation device 300 positioned above the mask 200.

이 때 조사되는 광은 IPL이며, 면광원으로 상기 기판(110)의 폭 이상의 폭을 가지며 일정 길이 이상의 기판(110)에 광이 인가된다. At this time, the irradiated light is IPL, and the light is applied to the substrate 110 having a width equal to or greater than the width of the substrate 110 as a surface light source.

이와 같이, 상기 광이 조사됨에 따라, 상기 마스크(200)에 형성된 상기 개구 패턴(210)을 통과한 광은 상기 전도성 잉크(120)에 도달하여, 상기 전도성 잉크(120)를 소결시키고, 이에 따라 상기 기판(110)의 상면에 전도성 패턴(121)이 형성된다. As such, as the light is irradiated, the light passing through the opening pattern 210 formed in the mask 200 reaches the conductive ink 120 to sinter the conductive ink 120. The conductive pattern 121 is formed on the upper surface of the substrate 110.

한편, 도 5a 및 도 5b를 참조하면, 상기 전도성 잉크(120)가 나노금속 분말(122) 또는 반도체 분말(122)을 포함하는 경우, 상기 광이 조사되기 전에는 도 5a에 도시된 바와 같이 상기 기판(110) 상에 단순히 도포되었던 상기 나노금속 분말(122) 또는 상기 반도체 분말(122)은 상기 광이 조사됨에 따라 열을 흡수하게 되고, 도 5b에 도시된 바와 같이, 상기 기판(110) 상으로 접착된다. Meanwhile, referring to FIGS. 5A and 5B, when the conductive ink 120 includes the nanometal powder 122 or the semiconductor powder 122, before the light is irradiated, the substrate as shown in FIG. 5A may be used. The nanometal powder 122 or the semiconductor powder 122, which was simply applied on the 110, absorbs heat as the light is irradiated, and as shown in FIG. 5B, onto the substrate 110. Are glued.

즉, 상기 나노금속 분말(122) 또는 상기 반도체 분말(122)은 상기 광을 제공받으면서 열을 흡수하게 되며, 열이 흡수된 상기 분말들은 도 5b에 도시된 바와 같이 상기 기판(110)의 내측으로 함침(embedding)되고, 이에 따라 상기 광을 제공받은 상기 전도성 잉크(120)는 상기 기판(110)과의 접촉력이 향상되며 전도성 패턴(121)으로 소결된다. That is, the nanometal powder 122 or the semiconductor powder 122 absorbs heat while being provided with the light, and the powders having heat absorbed into the substrate 110 as shown in FIG. 5B. The conductive ink 120, which is impregnated and thus provided with the light, has improved contact force with the substrate 110 and is sintered into the conductive pattern 121.

이와 달리, 도시하지는 않았으나, 상기 분말들은 상기 기판(110)의 내측으로 함침되지는 않더라도, 상기 기판(110)의 표면상에서 상기 기판(110)과의 융합으로 접합력이 향상되며, 이에 따라 상기 광을 제공받은 상기 전도성 잉크(120)는 상기 기판(110)과의 접촉력이 향상되며 전도성 패턴(121)으로 소결된다. On the other hand, although not shown, although the powder is not impregnated into the inside of the substrate 110, the bonding force is improved by the fusion with the substrate 110 on the surface of the substrate 110, thereby providing the light The provided conductive ink 120 has improved contact force with the substrate 110 and is sintered into the conductive pattern 121.

한편, 상기 기판(110)은 연속적으로 이송되며, 상기 광생성장치(300)에서 조사되는 광은 상대적으로 짧은 주기로 ON/OFF로 제공된다. On the other hand, the substrate 110 is continuously transferred, the light irradiated from the light generating device 300 is provided to the ON / OFF in a relatively short period.

즉, 상기 광생성장치(300)에서 제공되는 광의 인가 주기는 상기 기판(110)의 이송 속도와 상기 기판(110)에 조사되는 면광원의 면적을 고려하여 제어될 수 있다. That is, the application period of the light provided from the light generating device 300 may be controlled in consideration of the transfer speed of the substrate 110 and the area of the surface light source irradiated to the substrate 110.

이 경우, 도 6을 참조하면(도 6에서 마스크는 설명의 편의상 생략함), 상기 기판(110)이 화살표 방향으로 연속적으로 이송되는 경우, 제1 시간(t1)에서 상기 광생성장치(300)로부터 조사된 광이 도달되는 면적(A)은, 제2 시간(t2)에서 상기 광생성장치(300)로부터 조사된 광이 도달되는 면적(B)과 일부분이 중첩되도록 상기 광생성장치(300)에서 조사되는 광의 인가 주기가 제어될 수 있다. In this case, referring to FIG. 6 (the mask is omitted for convenience of description in FIG. 6), when the substrate 110 is continuously transferred in the direction of the arrow, the light generating device 300 at the first time t 1 . The area A through which the light irradiated from the light reaches the area A is partially overlapped with the area B through which the light irradiated from the light generating device 300 reaches the second time t 2 . The application period of the light irradiated at 300 may be controlled.

즉, 상기 광생성장치(300)에서 제공되는 광의 인가 주기는, 해당 주기에서 상기 광생성장치(300)에서 제공되는 광이 조사되는 면광원의 가장자리가 이전 주기에서의 광이 조사되었던 면광원의 가장자리와 중첩되도록 제어될 수 있다. That is, the application period of the light provided by the light generating device 300 is the edge of the surface light source to which the light provided by the light generating device 300 is irradiated in the period of the surface light source was irradiated with light in the previous period It can be controlled to overlap the edge.

일반적으로, 상기 광생성장치(300)로부터 제공되는 면광원의 강도(intensity)는 면광원의 가장자리에서 상대적으로 저하되므로, 상대적으로 강도가 낮은 영역에 대하여 이전 주기 및 다음 주기에서 중첩적으로 광을 인가하도록 제어함으로써, 상대적으로 강도가 낮은 면광원의 가장자리에서도 상기 전도성 잉크(120)를 충분히 소결할 수 있게 된다. In general, since the intensity of the surface light source provided from the light generating device 300 is relatively decreased at the edge of the surface light source, light is superimposed at the previous cycle and the next cycle for the region having a relatively low intensity. By controlling the application, the conductive ink 120 can be sufficiently sintered even at the edge of the surface light source having a relatively low intensity.

그리하여, 상기 기판(110) 상에 도포된 상기 전도성 잉크(120)의 전면에 걸쳐 고른 강도의 면광원이 인가되어, 상기 전도성 패턴(121)이 보다 균일하게 형성될 수 있다. Thus, an even intensity surface light source is applied over the entire surface of the conductive ink 120 applied on the substrate 110, so that the conductive pattern 121 may be more uniformly formed.

이 후, 도 1, 도 3c 및 도 4c를 참조하면, 상기 접착롤(600)을 통해 상기 기판(110) 상에 도포된 전도성 잉크(120) 중, 상기 광이 조사되지 않아 전도성 패턴(121)으로 소결되지 않은 전도성 잉크(120)를 제거한다. Thereafter, referring to FIGS. 1, 3C, and 4C, the conductive pattern 121 is not irradiated with the light among the conductive inks 120 coated on the substrate 110 through the adhesive roll 600. The conductive ink 120, which has not been sintered, is removed.

이 경우, 도 3c에 도시된 바와 같이, 상기 접착롤(600)에 감긴 상기 점착성 테이프(601)가 상기 전도성 잉크(120)에 접착되도록 제공된 후, 상기 전도성 잉크(120)로부터 탈착되면서 상기 기판(110) 상에 소결되며 접착되지 않은 전도성 잉크(120)를 제거할 수 있다. In this case, as shown in FIG. 3C, the adhesive tape 601 wound on the adhesive roll 600 is provided to be adhered to the conductive ink 120, and then detached from the conductive ink 120. The conductive ink 120 which is sintered onto the 110 and is not adhered to may be removed.

한편, 도 2에 도시된 실시예에서는, 상기 접착롤(600)에 의해 상기 전도성 잉크(120)가 제거된 후에, 상기 세척장치(700)를 통해 상기 기판(110) 상에 잔류한 상기 전도성 잉크(120)를 추가로 제거할 수 있다. Meanwhile, in the embodiment shown in FIG. 2, after the conductive ink 120 is removed by the adhesive roll 600, the conductive ink remaining on the substrate 110 through the cleaning apparatus 700. 120 may be further removed.

이 경우, 상기 세척장치(700)는 상기 전도성 잉크(120)를 용해하는 용매를 사용하여 상기 전도성 잉크(120)를 와싱(washing)하거나 와이핑(wiping)하여 제거할 수 있으며, 이와 달리, 상기 전도성 잉크(120)가 형성된 기판(110)을 용매에 침지시키고 초음파를 인가하여 상기 전도서 잉크(120)를 제거할 수 있음은 앞서 설명한 바와 같다. In this case, the cleaning device 700 may be removed by washing or wiping the conductive ink 120 using a solvent dissolving the conductive ink 120. As described above, the conductive ink 120 may be formed by immersing the substrate 110 in a solvent and applying ultrasonic waves to remove the conductive ink 120.

나아가, 상기 세척장치(700)는 상기 접착롤(600)의 전단에 위치하여 제거 공정을 선행적으로 수행할 수도 있으며, 상기 접착롤(600)이 구비되지 않고 상기 세척장치(700)만 단독으로 구비되어 제거 공정을 수행할 수도 있다. Further, the cleaning device 700 may be located at the front end of the adhesive roll 600 to perform the removal process in advance, the adhesive roll 600 is not provided only the cleaning device 700 alone It may be provided to perform the removal process.

또한, 도시하지는 않았으나, 상기 세척장치(700)에 의해 용매를 이용한 제거 공정이 수행된 이후, 별도의 건조장치를 통해 상기 용매를 건조시킬 수 있다. In addition, although not shown, after the removal process using a solvent is performed by the washing apparatus 700, the solvent may be dried through a separate drying apparatus.

이 후, 도 1, 도 3d 및 도 4d에 도시된 바와 같이, 상기 기판(110) 상에는 전도성 패턴(121)이 잔류하여 패턴을 형성하며, 상기 회수롤(500)에 의해 회수된다. Thereafter, as illustrated in FIGS. 1, 3D, and 4D, the conductive pattern 121 remains on the substrate 110 to form a pattern, and is recovered by the recovery roll 500.

상기와 같은 본 발명의 실시예들에 의하면, 전도성 잉크가 도포된 기판 상에 광이 조사되어 전도성 패턴을 형성하되, IPL 광을 이용하여 전도성 잉크를 소결시키므로, 상대적으로 단시간에 광소결을 수행할 수 있어 금속의 산화를 방지하고, 전기전도성이 우수한 전도성 패턴 또는 반도체 패턴을 유연성 기판 상에 형성할 수 있다. According to the embodiments of the present invention as described above, the light is irradiated on the substrate on which the conductive ink is applied to form a conductive pattern, but the sintering of the conductive ink using IPL light, so that the light sintering can be performed in a relatively short time. It is possible to prevent the oxidation of the metal, it is possible to form a conductive pattern or a semiconductor pattern excellent in electrical conductivity on the flexible substrate.

특히, 상기 유연성 기판은 공급롤과 회수롤에 의해 연속적으로 공급되며 전도성 패턴이 형성될 수 있으므로, 공정성 및 생산성을 향상시킬 수 있다. In particular, since the flexible substrate is continuously supplied by the supply roll and the recovery roll, and a conductive pattern may be formed, processability and productivity may be improved.

또한, 상기 IPL 광을 조사하여 광이 조사된 부분만 소결되며, 기판 상에 자가 나노결합(self-nanoembedding)이 발생하므로 기판과의 접착력이 향상되고, 광이 조사되지 않은 부분은 상대적으로 낮은 접착력으로 후술되는 제거공정에서 쉽게 제거될 수 있으므로, 기판의 연속 공정상에서 효과적인 패턴 형성이 가능하며 상대적으로 대면적에 대하여도 용이하게 패턴을 형성할 수 있다. In addition, only the portion irradiated with the IPL light is sintered, and self-nanoembedding occurs on the substrate, thereby improving adhesion to the substrate, and relatively low adhesion to the portion not irradiated with light. Since it can be easily removed in the removal process described later, it is possible to form an effective pattern on a continuous process of the substrate and can easily form a pattern for a relatively large area.

또한, 상기 공정은, 상대적으로 온도에 열악한 플라스틱 소재를 포함하는 유연성 기판에도 용이하게 적용할 수 있다. In addition, the above process can be easily applied to a flexible substrate including a relatively poor temperature plastic material.

특히, 상기 IPL 광은 면광원으로 제공되므로 연속적으로 제공되는 기판에 보다 효과적으로 패턴 형성을 수행할 수 있으며, 면광원의 가장자리가 서로 중첩되도록 조사됨으로써 상대적으로 광의 세기가 약한 부분에서 광의 세기를 증가시켜 균일한 품질의 패턴을 형성할 수 있다. In particular, since the IPL light is provided as a surface light source, the pattern formation can be more effectively performed on substrates continuously provided, and the edges of the surface light sources are irradiated to overlap each other, thereby increasing the light intensity at a portion where the light intensity is relatively low. It is possible to form a pattern of uniform quality.

또한, 상기 패턴 형성 장치 및 패턴 형성방법은, 금속 나노 입자가 포함된 나노금속 분말뿐만 아니라, 반도체 입자가 포함된 반도체 분말에도 적용될 수 있으므로, 금속 패턴은 물론 반도체 패턴도 대면적으로 공정성 및 생산성을 향상시켜 형성할 수 있다. In addition, the pattern forming apparatus and the pattern forming method may be applied not only to the nano metal powder containing the metal nanoparticles, but also to the semiconductor powder containing the semiconductor particles. It can improve and form.

상기에서는 본 발명의 바람직한 실시예를 참조하여 설명하였지만, 해당 기술 분야의 숙련된 당업자는 하기의 특허 청구 범위에 기재된 본 발명의 사상 및 영역으로부터 벗어나지 않는 범위 내에서 본 발명을 다양하게 수정 및 변경시킬 수 있음을 이해할 수 있을 것이다.While the foregoing has been described with reference to preferred embodiments of the present invention, those skilled in the art will be able to variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. It will be appreciated.

Claims (23)

유연성 기판을 공급하는 공급롤; A supply roll for supplying a flexible substrate; 상기 기판 상에 전도성 잉크를 도포하는 도포장치; An applicator for applying a conductive ink onto the substrate; 상기 전도성 잉크가 도포된 기판의 상부에 위치하여 패턴이 형성된 마스크; A mask having a pattern formed on the substrate on which the conductive ink is applied; 상기 마스크의 상부에서 상기 기판 상에 도포된 전도성 잉크로 광을 조사하여 상기 기판 상에 전도성 패턴을 형성하는 광생성장치; 및A light generating device to form a conductive pattern on the substrate by irradiating light with a conductive ink applied on the substrate from the upper portion of the mask; And 상기 전도성 패턴이 형성된 기판을 회수하는 회수롤을 포함하는 패턴 형성 장치. And a recovery roll for recovering the substrate on which the conductive pattern is formed. 제1항에 있어서, The method of claim 1, 상기 광생성장치와 상기 기판 사이의 거리를 측정하는 측정장치; A measuring device for measuring a distance between the light generating device and the substrate; 상기 마스크 또는 상기 광생성장치를 상기 기판에 대하여 수직방향으로 이동시키는 수직이동장치; A vertical moving device for moving the mask or the light generating device in a vertical direction with respect to the substrate; 상기 마스크에 형성된 마커와 상기 기판에 형성된 마커를 감지하는 감지장치; 및A sensing device for sensing a marker formed on the mask and a marker formed on the substrate; And 상기 마스크 또는 상기 광생성장치를 상기 기판에 대하여 수평방향으로 이동시키는 수평이동장치를 더 포함하는 패턴 형성 장치. And a horizontal moving device for moving the mask or the light generating device in a horizontal direction with respect to the substrate. 제1항에 있어서, The method of claim 1, 상기 광생성장치에서 조사되는 광은 IPL(intense pulsed light)인 것을 특징으로 하는 패턴 형성 장치. The light irradiated from the light generating device is a pattern forming device, characterized in that the IPL (intense pulsed light). 제3항에 있어서, The method of claim 3, 상기 광생성장치에서 조사되는 IPL은 면광원인 것을 특징으로 하는 패턴 형성 장치. IPL irradiated from the light generating device is a pattern forming apparatus, characterized in that the surface light source. 제4항에 있어서, The method of claim 4, wherein 상기 기판이 이송됨에 따라, 상기 광생성장치에서 조사되는 면광원의 가장자리는 상기 기판 상의 전도성 잉크에 중첩되도록 조사되는 것을 특징으로 하는 패턴 형성 장치. As the substrate is transferred, the edge of the surface light source irradiated by the light generating device is irradiated to overlap the conductive ink on the substrate. 제1항에 있어서, The method of claim 1, 상기 광생성장치와 상기 회수롤 사이에 위치하여, 상기 광이 조사되지 않아 전도성 패턴으로 형성되지 않아 상기 기판에 접착되지 않은 전도성 잉크를 접착하여 회수하는 접착롤을 더 포함하는 패턴 형성 장치. Located between the light generating device and the recovery roll, the pattern forming apparatus further comprises an adhesive roll for adhering and recovering a conductive ink that is not bonded to the substrate because the light is not irradiated and is not formed as a conductive pattern. 제6항에 있어서, 상기 접착롤은, The method of claim 6, wherein the adhesive roll, 상기 기판에 접착되지 않은 전도성 잉크를 접착하는 점착성 테이프를 제공하는 것을 특징으로 하는 패턴 형성 장치. And a pressure-sensitive adhesive tape for adhering conductive ink not adhered to the substrate. 제1항에 있어서,The method of claim 1, 상기 접착롤의 전단 또는 후단에 위치하여, 상기 기판에 도포된 전도성 잉크를 세척하는 세척장치를 더 포함하는 패턴 형성 장치. Located at the front or rear end of the adhesive roll, the pattern forming apparatus further comprises a cleaning device for washing the conductive ink applied to the substrate. 제8항에 있어서, 상기 세척장치는, According to claim 8, The washing device, 상기 기판이 담기는 용매를 포함하며, 상기 용매에 초음파 또는 진동을 인가하는 것을 특징으로 하는 패턴 형성 장치. And a solvent containing the substrate, wherein the ultrasonic wave or vibration is applied to the solvent. 제1항에 있어서, 상기 전도성 잉크는, The method of claim 1, wherein the conductive ink, 나노금속 분말 또는 반도체 분말을 포함하는 용액인 것을 특징으로 하는 패턴 형성 장치. Pattern forming apparatus characterized in that the solution containing a nano-metal powder or a semiconductor powder. 제10항에 있어서, The method of claim 10, 상기 전도성 잉크에 광이 조사됨에 따라, 상기 나노금속 분말 또는 상기 반도체 분말은 열을 흡수하여 상기 기판에 융합 또는 함침되는 것을 특징으로 하는 패턴 형성 장치. As the conductive ink is irradiated with light, the nanometal powder or the semiconductor powder absorbs heat to fuse or impregnate the substrate. 제10항에 있어서, 상기 나노금속 분말은, The method of claim 10, wherein the nanometal powder, 와이어(wire), 막대(rod), 구(sphere) 중 어느 하나의 형상인 것을 특징으로 하는 패턴 형성 장치. Pattern forming apparatus characterized in that the shape of any one of a wire (wire), rod (rod). 제12항에 있어서, The method of claim 12, 상기 와이어 형상의 나노금속 분말은 10 nm 내지 100 nm의 직경, 및 1 μm 내지 1 mm의 길이를 가지는 것을 특징으로 하는 패턴 형성 장치. The wire-shaped nanometal powder has a diameter of 10 nm to 100 nm, and a length of 1 μm to 1 mm pattern forming apparatus. 제10항에 있어서, 상기 나노금속 분말은, The method of claim 10, wherein the nanometal powder, 구리(Cu), 알루미늄(Al), 니켈(Ni), 금(Au), 은(Ag), 백금(Pt) 중 적어도 하나를 포함하는 것을 특징으로 하는 패턴 형성 장치. Pattern forming apparatus comprising at least one of copper (Cu), aluminum (Al), nickel (Ni), gold (Au), silver (Ag), platinum (Pt). 제10항에 있어서, 상기 반도체 분말은, The method of claim 10, wherein the semiconductor powder, 갈륨-인(GaP), 산화지르코튬(ZrO2), 실리콘(Si), 황화카드뮴(CdS), 이산화티타늄(TiO2), 산화아연(ZnO), 산화철(Fe2O3), 산화텅스텐(WO2), 산화주석(SnO2) 중 적어도 하나를 포함하는 것을 특징으로 하는 패턴 형성 장치. Gallium-phosphorus (GaP), zirconium oxide (ZrO 2 ), silicon (Si), cadmium sulfide (CdS), titanium dioxide (TiO 2 ), zinc oxide (ZnO), iron oxide (Fe 2 O 3 ), tungsten oxide ( WO 2 ), tin oxide (SnO 2 ) comprising a pattern forming apparatus. 제15항에 있어서, 상기 반도체 분말은, The method of claim 15, wherein the semiconductor powder, 밴드 갭(band gap)이 3.5 eV 이하인 것을 특징으로 하는 패턴 형성 장치. A pattern forming apparatus, characterized in that the band gap is 3.5 eV or less. 공급롤에 의해 공급되는 유연성 기판 상에 전도성 잉크를 도포하는 단계;Applying a conductive ink onto the flexible substrate supplied by the feed roll; 상기 전도성 잉크가 도포된 기판의 상부에 마스크를 위치시키는 단계;Positioning a mask on the substrate to which the conductive ink is applied; 상기 마스크의 상부에서 상기 기판 상에 도포된 전도성 잉크의 피막으로 광을 조사하여 상기 기판 상에 전도성 패턴을 형성하는 단계; 및Irradiating light onto the film of the conductive ink applied on the substrate from the upper portion of the mask to form a conductive pattern on the substrate; And 상기 전도성 패턴이 형성된 기판을 회수하는 단계를 포함하는 패턴 형성방법. Recovering the substrate on which the conductive pattern is formed pattern forming method. 제17항에 있어서, 상기 전도성 패턴이 형성된 기판을 회수하기 전에, The method of claim 17, wherein before recovering the substrate on which the conductive pattern is formed, 상기 광이 조사되지 않아 전도성 패턴으로 형성되지 않아 상기 기판에 접착되지 않은 전도성 잉크를 제거하는 단계를 더 포함하는 패턴 형성방법. And removing conductive ink that is not adhered to the substrate because the light is not irradiated and is not formed as a conductive pattern. 제18항에 있어서, 상기 전도성 잉크를 제거하는 단계에서, 19. The method of claim 18, wherein in the step of removing the conductive ink, 점착성 테이프로 상기 전도성 잉크를 제거하는 것을 특징으로 하는 패턴 형성방법. And removing the conductive ink with an adhesive tape. 제18항에 있어서, 상기 전도성 잉크를 제거하는 단계에서, 19. The method of claim 18, wherein in the step of removing the conductive ink, 상기 전도성 잉크를 용해하는 용매를 사용하여 상기 전도성 잉크를 와싱(washing)하거나 와이핑(wiping)하여 제거하는 것을 특징으로 하는 패턴 형성방법. And removing the conductive ink by washing or wiping the conductive ink using a solvent dissolving the conductive ink. 제18항에 있어서, 상기 전도성 잉크를 제거하는 단계에서, 19. The method of claim 18, wherein in the step of removing the conductive ink, 상기 전도성 잉크를 용해하는 용매에 침지시키고 초음파를 인가하여 상기 전도성 잉크를 제거하는 것을 특징으로 하는 패턴 형성방법. And immersing in a solvent in which the conductive ink is dissolved and applying ultrasonic waves to remove the conductive ink. 제17항에 있어서, 상기 전도성 잉크를 도포하는 단계에서, The method of claim 17, wherein in the step of applying the conductive ink, 상기 전도성 잉크는 바 코팅(bar coating), 스핀 코팅(spin coating), 슬롯 다이 코팅(slot die coating), 그라비아 코팅(gravure coating), 스프레이 코팅(spray coating), 딥 코팅(dip coating) 중 어느 하나로 도포되는 것을 특징으로 하는 패턴 형성방법. The conductive ink may be any one of bar coating, spin coating, slot die coating, gravure coating, spray coating, and dip coating. Pattern forming method characterized in that the coating. 제17항에 있어서, The method of claim 17, 상기 조사되는 광은 0.01 J/cm2 내지 100 J/cm2의 강도로, 1 ms 내지 100 ms 동안 조사되는 것을 특징으로 하는 패턴 형성방법. The irradiated light has a strength of 0.01 J / cm 2 to 100 J / cm 2 , the pattern forming method, characterized in that irradiated for 1 ms to 100 ms.
PCT/KR2016/011940 2015-10-26 2016-10-21 Pattern forming device using photo sintering and pattern forming method using same Ceased WO2017073967A1 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009505358A (en) * 2005-08-12 2009-02-05 カンブリオス テクノロジーズ コーポレイション Transparent conductors based on nanowires
KR20140094789A (en) * 2013-01-23 2014-07-31 (주)쎄미시스코 Enlarged Light Sintering Apparatus of Electro Conductive Ink
US20140333916A1 (en) * 2013-05-13 2014-11-13 Nokia Corporation Method and apparatus for the formation of conductive films on a substrate
KR20150016552A (en) * 2012-06-05 2015-02-12 쇼와 덴코 가부시키가이샤 Substrate film and sintering method
KR20150069788A (en) * 2013-12-16 2015-06-24 한국과학기술원 Micro copper wire manufacturing method and manufacturing method using the same transistor
KR20150094011A (en) * 2014-02-10 2015-08-19 한국기계연구원 Manufacturing equipment for an electrode with low-temperature sintering

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3528669B2 (en) * 1999-03-25 2004-05-17 株式会社村田製作所 Method of forming conductor pattern and method of manufacturing ceramic multilayer substrate
KR101164061B1 (en) * 2010-10-22 2012-07-12 한국과학기술원 Pattern fabricating method and pattern transferring apparatus, flexible display panel, flexible solar cell, electronic book, thin film transistor, electromagnetic-shielding sheet, flexible printed circuit board applying thereof
KR101350507B1 (en) * 2013-01-09 2014-01-17 (주)쎄미시스코 Electro-conductive ink comprising metal nano-particle and light sintering method of the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009505358A (en) * 2005-08-12 2009-02-05 カンブリオス テクノロジーズ コーポレイション Transparent conductors based on nanowires
KR20150016552A (en) * 2012-06-05 2015-02-12 쇼와 덴코 가부시키가이샤 Substrate film and sintering method
KR20140094789A (en) * 2013-01-23 2014-07-31 (주)쎄미시스코 Enlarged Light Sintering Apparatus of Electro Conductive Ink
US20140333916A1 (en) * 2013-05-13 2014-11-13 Nokia Corporation Method and apparatus for the formation of conductive films on a substrate
KR20150069788A (en) * 2013-12-16 2015-06-24 한국과학기술원 Micro copper wire manufacturing method and manufacturing method using the same transistor
KR20150094011A (en) * 2014-02-10 2015-08-19 한국기계연구원 Manufacturing equipment for an electrode with low-temperature sintering

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