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WO2017069134A1 - Élément d'imagerie à semi-conducteur - Google Patents

Élément d'imagerie à semi-conducteur Download PDF

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Publication number
WO2017069134A1
WO2017069134A1 PCT/JP2016/080897 JP2016080897W WO2017069134A1 WO 2017069134 A1 WO2017069134 A1 WO 2017069134A1 JP 2016080897 W JP2016080897 W JP 2016080897W WO 2017069134 A1 WO2017069134 A1 WO 2017069134A1
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Prior art keywords
filter
visible light
light
solid
infrared light
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English (en)
Japanese (ja)
Inventor
隆之 川崎
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Sharp Corp
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Sharp Corp
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Priority to JP2017546558A priority Critical patent/JP6578012B2/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • the present invention relates to a solid-state imaging device.
  • a conventional solid-state imaging device is, for example, a conventional primary color filter array [for two G (green) pixel filters: a visible light filter, as in the solid-state imaging device 1000 shown in FIGS. 1008G, B (blue) pixel filter: 1 pixel: Visible light filter 1008B, R (red) pixel filter: 1 pixel: visible light filter 1008R arranged in a checkered pattern] Was replaced with a near-infrared filter (IR) 1009.
  • IR near-infrared filter
  • FIGS. . 24 to 26 are diagrams for explaining a configuration example of a conventional imaging system.
  • a visible light image is taken with a conventional solid-state imaging device, as shown in FIG. 24A, it may be more appropriate to express a visible light source 1200 (which includes a near-infrared wavelength, so that it is a normal light source).
  • the output signals of R, G, and B include wavelengths in the near infrared region.
  • the conventional photodiode and the R • G • B filter also have sensitivity in the near-infrared wavelength region). For this reason, conventionally, an image is constructed by performing a process of subtracting information of IR pixels, which are pixels provided with a filter that transmits only light in the near-infrared wavelength region, from information of R, G, and B outputs.
  • the near-infrared light source 1100 irradiates the object to be photographed with near-infrared light, and the solid-state imaging device 1000 or 2000 Photographing is performed with pixels, and an image is constructed (as described above, the R, G, and B pixels also have sensitivity in the near-infrared wavelength region).
  • the complementary color filter shown in FIG. 23A is also the same image construction method except that the number of pixels is different from that of the filter array, and the description thereof is omitted here.
  • the image is acquired by the above-described method, when a visible light image is acquired, an image is constructed using information of 3/4 pixels for the primary color and 2/3 pixels for the complementary color, and near-infrared light is acquired. It can be seen that the image is acquired by using all pixel information.
  • an IR (infrared) cut filter is provided between the imaging device chip and the imaging optical system, so that the above-mentioned near red There is no need to worry about photoelectric conversion with light in the outer region.
  • an imaging system that can acquire a near-infrared light image using a normal solid-state imaging device without using the solid-state imaging device 1000 or 2000 as shown in FIG. 22 or FIG. 23 has been proposed.
  • an imaging system provided with two imaging elements a solid-state imaging element 4000 for visible light and a solid-state imaging element 3000 for near-infrared light.
  • An element provided with a cut filter 4009 and an apparatus that captures images with an element provided with a bandpass filter 3008 (transmitting only light of a specific IR wavelength) in an optical system have been proposed for obtaining near-infrared light images.
  • the number of the solid-state imaging device 5000 is one, but a filter switching mechanism is provided in the photographing optical system so that the IR cut filter 4009 and the band-pass filter 3008 can be switched for photographing. Proposed.
  • an optical system that irradiates light from a light source device to a subject to be photographed is provided with a mechanism for switching an IR cut filter or a band pass filter. .
  • Japanese Patent Publication Japanese Patent Laid-Open No. 2005-191748 (Released on July 14, 2005)” Japanese Patent Publication “Japanese Patent Laid-Open No. 4-357926 (published on Dec. 10, 1992)”
  • FIGS. 27 to 30 are diagrams showing operations for outputting visible light or near-infrared light data of the conventional imaging system.
  • FIGS. 27A to 27E show all 1.3 million pixels, respectively.
  • FIGS. 28A to 28E show the flow of operations when imaging is performed by irradiating visible light with a readout CCD image sensor (effective pixel number: horizontal 1280 pixels ⁇ vertical 960 pixels). The flow of operation when performing imaging by irradiating near infrared light with the CCD imaging device is shown.
  • FIGS. 29 (a) to 29 (e) show the flow of operations when an image is taken with an IR cut filter in the CCD image pickup device
  • the visible light image obtained by the conventional solid-state imaging device 1000 or 2000 is formed from information of 3/4 pixels (2/3 pixels in the case of complementary colors), and the visible light image itself is Since it was created by processing with a near-infrared light image, there was a problem that the image processing for vein (artery) authentication would be very complicated.
  • the present invention has been made in view of the above problems, and is a solid-state imaging device that simplifies image processing and enables simultaneous acquisition of both a visible light image and a near-infrared light image.
  • the purpose is to provide.
  • a solid-state imaging device receives near-infrared light and visible light that are simultaneously irradiated onto an imaging target, and photoelectrically converts the received light.
  • a plurality of photoelectric conversion units that generate electric charge, a plurality of visible light imaging color filters associated with each of a part of the plurality of photoelectric conversion units, and the remaining of the plurality of photoelectric conversion units A plurality of correlated near-infrared color photographing color filters, wherein the visible color photographing color filter and the near-infrared color photographing color filter are two-dimensionally dispersed, Information on the visible light image and near-infrared light image based on the charge generated by the photoelectric conversion unit is output to the outside at the same time, and the visible light photographing color filter does not transmit light of a specific wavelength in visible light.
  • image processing can be simplified, and both a visible light image and a near-infrared light image can be simultaneously acquired.
  • image processing can be simplified, and both a visible light image and a near-infrared light image can be simultaneously acquired.
  • an environment of strong light such as sunlight. In this case, it is possible to obtain a good and accurate image.
  • FIG. 1 It is a figure for demonstrating the structure of the solid-state image sensor which concerns on Embodiment 1 of this invention. It is a top view which shows schematic structure of the imaging system containing the said solid-state image sensor. It is a schematic diagram which shows schematic structure of the imaging system containing the said solid-state image sensor.
  • (A)-(e) is a figure which shows the operation
  • FIG. 7 is a diagram for explaining an overflow voltage and an electronic shutter voltage of the solid-state imaging device, and is a potential diagram of a B-B ′ section in FIG. 6. It is a figure explaining the electronic shutter operation
  • FIG. 3 is a schematic diagram for obtaining a desired transmitted light wavelength using a two-layer filter in the solid-state imaging device according to the first embodiment of the present invention. It is sectional drawing for demonstrating the example of formation of the filter of the said solid-state image sensor. It is sectional drawing for demonstrating the other example of a filter of the said solid-state image sensor.
  • A) is a figure which shows the film thickness of each layer which comprises an inorganic filter
  • (b) is a graph which shows the simulation result of the transmittance
  • A)-(e) is a comparison figure which respectively shows the operation
  • A)-(e) is a comparison figure which respectively shows the operation
  • A)-(e) is a comparison figure which respectively shows the operation
  • (A)-(e) is a comparison figure which respectively shows the operation
  • Embodiments of the present invention will be described with reference to FIGS. 1 to 8 and the drawings.
  • components having the same functions as those described in the specific embodiment may be denoted by the same reference numerals and description thereof may be omitted.
  • visible light is longer than 380 nm and has a wavelength range of 750 nm or less
  • blue is longer than 380 nm and has a wavelength range of 490 nm or less
  • green is from 490 nm.
  • Description will be made using a long wavelength range of 570 nm or less, red having a wavelength range longer than 570 nm and not more than 750 nm, and infrared light having a wavelength range longer than 750 nm.
  • FIG. 1 is a diagram for explaining the configuration of a solid-state imaging device 100 according to Embodiment 1 of the present invention.
  • 1A is a view showing a state of a filter array when the solid-state imaging device 100 is viewed from the light incident side
  • FIG. 1B is a view of A ⁇ shown in FIG. It is sectional drawing of an A 'cross section.
  • FIG. 2 is a plan view showing a schematic configuration of an imaging system 500 including the solid-state imaging device 100.
  • FIG. 3 is a schematic diagram illustrating a schematic configuration of an imaging system 500 including the solid-state imaging device 100.
  • FIGS. 4A to 4E are diagrams showing operations for outputting visible light data and infrared light data in the imaging system 500, respectively.
  • FIG. 5 is a diagram for explaining an example of transmission wavelength setting of each filter in the solid-state imaging device 100
  • FIG. 5A is a graph showing optical characteristics of the near-infrared light filter 9.
  • FIG. 5B is a graph showing the optical characteristics of the visible light filter 8
  • FIG. 5C is a graph showing the optical characteristics of the near-infrared light pixel, and FIG. These are graphs showing optical characteristics of visible light pixels.
  • the imaging system 500 of this embodiment includes a solid-state imaging device 100, a near infrared light source 101, and a visible light source 102 on a substrate 501.
  • the visible light source 102 is disposed so as to sandwich the solid-state imaging device 100 in the X direction.
  • the near-infrared light source 101 is disposed so as to sandwich each visible light source 102 in the Y direction.
  • the imaging system 500 applies near-infrared light from the near-infrared light source 101 and visible light from the visible light source 102 to an imaging target (for example, a hand).
  • an imaging target for example, a hand
  • the solid-state imaging device 100 reads visible light information and near-infrared light information simultaneously (in one frame). That is, charge accumulation / reading / transfer and all processes are simultaneously performed on the visible light pixel and the near-infrared pixel.
  • the near-infrared light source 101 and the visible light source 102 for example, an LED (light emitting diode) or a laser may be used.
  • a laser it is preferable that it is a laser safe even if it enters into eyes, for example, an eye safe laser.
  • the solid-state imaging device 100 is not an interlaced readout, but as shown in FIGS. 4A to 4E, an imaging device [CMOS (Complementary metal-oxide semiconductor) type imaging device or CCD (Charge-coupled) capable of reading all pixels. device) has a function as an all-pixel readout type CCD].
  • CMOS Complementary metal-oxide semiconductor
  • CCD Charge-coupled
  • FIGS. 4A to 4E respectively irradiate both visible light and near-infrared light with a 1.3 million pixel full readout CCD image sensor (effective pixel number: horizontal 1280 pixels ⁇ vertical 960 pixels).
  • the operation when shooting is shown. 27 (a) to (e) and FIG. 28 (a) to (e), and FIG. 29 (a) to (e) and FIG. 30 (a) to (e).
  • the image processing for obtaining information on all the pixels of the visible light image or the near-infrared light image can be performed more easily and faster than the comparison diagram shown in FIG.
  • the solid-state imaging device 100 is mainly used for biometric authentication, and is capable of constructing an imaging system for biometric authentication with high speed and high accuracy.
  • the solid-state imaging device 100 includes a silicon substrate 1 (semiconductor substrate), a photodiode impurity layer 2 (photoelectric conversion unit), a charge transfer unit impurity layer 3, Gate electrode 4, light shielding film 5, silicon insulating film 6, planarizing film 7, visible light filter 8 (color filter for visible light photography), near infrared light filter 9 (color filter for near infrared light photography) ) And a condensing microlens 10.
  • the configurations of the gate electrode 4, the light shielding film 5, the silicon insulating film 6, the planarizing film 7, and the condensing microlens 10 are not related to the essence of the present invention, and thus the description thereof is omitted here. .
  • the silicon substrate 1 is a semiconductor substrate having one conductivity based on silicon.
  • one conductivity is either p-type conductivity or n-type conductivity.
  • Pwell P-type impurity layer
  • Photodiode impurity layer 2 Within the silicon substrate 1, there are a plurality of regions that generate near-infrared light and visible light that are simultaneously irradiated onto a photographing target (imaging target) and generate charges by photoelectrically converting the received light. Photodiode impurity layer 2 and a plurality of charge transfer portion impurity layers 3 which are regions to which the generated charges are transferred are formed.
  • the charges generated in the photodiode impurity layer 2 associated with the visible light filter 8 and the near-infrared light filter 9 to be described later are respectively transmitted through the charge transfer portion impurity layer 3 to a visible light image and a near-red light. Simultaneously output to the outside as information of one pixel of the external light image. In other words, the information of the visible light image and the near-infrared light image based on the charge generated in the photodiode impurity layer 2 is simultaneously output to the outside.
  • each of the plurality of visible light filters 8 and the same number of near-infrared light filters 9 are associated with each of the plurality of photodiode impurity layers 2 in a two-dimensional manner.
  • the total number of pixels is about 1.3 million pixels.
  • the visible light filter 8 is associated with each of a part of the plurality of photodiode impurity layers 2
  • the near-infrared light filter 9 is associated with each of the remaining photodiode impurity layers 2. It has been.
  • the visible light filters 8 and the near-infrared light filters 9 are two-dimensionally distributed in the same number.
  • the image processing can be simplified, and both the visible light image and the near infrared light image can be simultaneously acquired.
  • each of the visible light filter 8 and the near-infrared light filter 9 is disposed between the condensing microlens 10 on the photodiode impurity layer 2.
  • information on a specific visible light pixel may be supplemented using information on infrared light pixels arranged on the top, bottom, left, and right of the pixel. It becomes possible. Therefore, compared to a configuration in which the color filter for visible light photography and the color filter for near infrared light photography are not arranged alternately, the information of all pixels of the visible light image or the near infrared light image is obtained.
  • the image processing for obtaining can be simplified.
  • the visible light filter 8 does not transmit light having a specific wavelength in visible light. Specifically, the visible light filter 8 does not transmit light having a longer wavelength than blue. More specifically, the visible light filter 8 cuts light having a wavelength longer than that of visible light blue (490 nm). The visible light filter 8 may transmit light having a wavelength longer than that of visible light blue (490 nm), or transmit only visible light blue (longer than 380 nm and 490 nm or less). Also good. As shown in FIG. 5A, the near-infrared light filter 9 transmits near-infrared light and does not transmit light having a wavelength shorter than the visible light wavelength.
  • the near-infrared light filter 9 cuts light having a wavelength shorter than 750 nm, for example. Thereby, as shown in FIG. 5C and FIG. 5D, the difference between the sensitivity of the near-infrared light pixel and the sensitivity of the visible light pixel is reduced.
  • the sensitivities in FIGS. 5C and 5D indicate the degree to which the photodiode impurity layer 2 has reacted to light. That is, the amount of light incident on the photodiode impurity layer 2 through the visible light filter 8 or the near infrared light filter 9 is shown. The effect of using the visible light filter 8 will be described later in detail.
  • the near-infrared light filter 9 is not limited to the above, and may be a film that transmits only light of a specific wavelength.
  • the solid-state imaging device 1500 described in FIGS. 31 and 32 is a means for the applicant to solve the problems with respect to Patent Document 1 and Patent Document 2 by simplifying image processing, and visible light images and near-infrared light. This is proposed as a solid-state imaging device capable of simultaneously acquiring both images.
  • FIG. 31 is a comparative example of the solid-state imaging device 100 of the present invention and the solid-state imaging device proposed by the applicant, and is a diagram for explaining the configuration of the solid-state imaging device 1500.
  • FIG. 31A is a diagram showing the state of the filter array when the solid-state imaging device 1500 is viewed from the light incident side.
  • FIG. 31B is a diagram of F ⁇ shown in FIG.
  • FIG. 32 is a diagram for explaining an example of setting the transmission wavelength of each filter in the solid-state imaging device 1500.
  • FIG. 32A is a graph showing optical characteristics of the near-infrared light filter.
  • B) in FIG. 32 is a graph showing the optical characteristics of the filter for visible light,
  • c) in FIG. 32 is a graph showing the optical characteristics of the near-infrared light pixel, and
  • the difference between the solid-state imaging device 1500 and the solid-state imaging device 100 according to the present embodiment is that a visible light filter 8 is provided instead of the visible light filter (visible light transmission / near infrared cut filter) 58. It is a point and other composition is the same. That is, as shown in FIGS. 31 and 32, the silicon substrate 51, the photodiode impurity layer 52, the charge transfer portion impurity layer 53, the gate electrode 54, the light shielding film 55, the silicon insulating film 56, and the planarization film of the solid-state imaging device 1500.
  • a near-infrared light filter (near-infrared light transmission / visible light cut filter) 59, and a condensing microlens 60 include a silicon substrate 1, a photodiode impurity layer 2, and a charge transfer portion impurity of the solid-state imaging device 100.
  • the configuration is the same as that of the layer 3, the gate electrode 4, the light shielding film 5, the silicon insulating film 6, the planarization film 7, the near infrared light filter 9, and the condensing microlens 10.
  • the visible light filter 58 of the solid-state imaging device 1500 is a filter that does not transmit light having a wavelength of near infrared light or longer.
  • the near-infrared light filter 59 is a filter that does not transmit light having a wavelength shorter than or equal to the visible light wavelength, as shown in FIGS.
  • the solid-state image sensor 1500 is irradiated with both wavelengths of light simultaneously from the near-infrared light source 101 and the visible light source 102 as shown in FIG. An external light image can be acquired simultaneously.
  • the solid-state imaging device 1500 has a problem that, for example, when photographing under strong sunlight, a good image may not be obtained. The above problem will be described in detail below.
  • FIG. 6 is a configuration example of a solid-state imaging device 1300 for explaining the overflow voltage and the electronic shutter voltage.
  • N-type silicon substrate 31 a P-type impurity layer 32 (PWell), a photodiode N-type impurity layer 33, a charge transfer portion impurity layer 34, a gate electrode 35, a light-shielding film 36, and silicon insulation.
  • a film 37, a planarizing film 38, a visible light filter 39, a near-infrared light filter 40, and a condensing microlens 41 are provided.
  • the charge transfer portion impurity layer 34, the gate electrode 35, the light-shielding film 36, the silicon insulating film 37, the planarizing film 38, the near-infrared light filter 40, and the condensing microlens 41 are the solid-state imaging device 100 shown in FIG.
  • the charge transfer portion impurity layer 3, the gate electrode 4, the light shielding film 5, the silicon insulating film 6, the planarizing film 7, the near-infrared light filter 9, and the condensing microlens 10 have the same configuration.
  • the solid-state imaging device 1300 is formed by forming an N-type photodiode impurity layer and a P-type photodiode lower well layer on an N-type substrate, and has a transistor structure toward the deep part of the substrate.
  • the N-type silicon substrate 31 and the P-type impurity layer 32 correspond to the silicon substrate 1 of the solid-state image sensor 100
  • the photodiode N-type impurity layer 33 corresponds to the photodiode impurity layer 2 of the solid-state image sensor 100.
  • an overflow drain is generally provided in order to control a phenomenon in which the overflowed charge flows into a peripheral transfer unit or the like, and recently, a vertical overflow drain (OFD) is often used. OFD will be described below with reference to FIG.
  • FIG. 7 is a diagram for explaining the overflow voltage and the electronic shutter voltage of the solid-state imaging device 1300, and is a potential diagram of the B-B ′ cross section of FIG.
  • FIG. 7 shows the potential structure from the photodiode N-type impurity layer 33 to the deep part of the N-type silicon substrate 31 in the solid-state imaging device 1300
  • FIG. 7A shows the charge accumulation state.
  • FIG. 7B shows a charge sweeping state. 7A and 7B, the horizontal axis indicates the substrate depth shown in FIG. 6, and the vertical axis indicates the potential.
  • the Pwell 32 applies a DC voltage called an OFD voltage (usually about several volts) to the N-type silicon substrate 31 with the Pwell 32 as the GND potential.
  • an OFD voltage usually about several volts
  • the potential of the PWell 32 becomes a barrier for preventing charges accumulated in the photodiode N-type impurity layer 33 from being swept out to the N-type silicon substrate 31 with a potential equal to or higher than a predetermined value. Therefore, charges up to the height of the barrier can be accumulated in the photodiode N-type impurity layer 33.
  • the solid-state imaging device 1300 can determine the amount of charge accumulated in the photodiode N-type impurity layer 33 by adjusting the height of the barrier by the OFD voltage.
  • an excessive charge may be generated in the photodiode N-type impurity layer 33 due to the strong light incident on the solid-state imaging device 1300 until the barrier due to the potential of the Pwell 32 is exceeded.
  • the charges that have overflowed without being accumulated in the photodiode N-type impurity layer 33 are swept out to the N-type silicon substrate 31 side.
  • the charges swept out to the N-type silicon substrate 31 side due to overflow do not particularly affect the image.
  • the overflow drain may not be processed and may flow into the charge transfer portion of the adjacent pixel. This is called a blooming failure, and the image has an image in which a white band flows from surrounding pixels.
  • the Pwell 32 applies a pulse voltage called an electronic shutter voltage (about several volts) from the OFD voltage to the N-type silicon substrate 31 with the Pwell 32 as the GND potential.
  • an electronic shutter voltage about several volts
  • the barrier of the PWell 32 is pulled to the potential of the N-type silicon substrate 31 and all the barriers disappear.
  • all charges accumulated in the photodiode N-type impurity layer 33 are swept out to the N-type silicon substrate 31.
  • this charge accumulation state (a state where an OFD voltage is applied to the N-type silicon substrate 31) and a charge sweep state (an OFD + electronic shutter voltage are applied to the N-type silicon substrate 31).
  • the amount of charge accumulated in the photodiode N-type impurity layer 33 can be adjusted. In other words, the automatic exposure adjustment is performed by changing the time distribution.
  • FIG. 8A and 8B are diagrams for explaining the electronic shutter operation of the solid-state imaging device 1300.
  • FIG. 8A shows the case where the light incident on the solid-state imaging device 1300 is strong
  • FIG. 8B shows the solid-state imaging. A case where light incident on the element 1300 is weak is shown.
  • the solid-state imaging device 1300 In the operation of the solid-state imaging device 1300 to capture one picture (one frame), first, an electronic shutter voltage is applied to the N-type silicon substrate 31 at the charge sweep time T1. As a result, the charge in the photodiode N-type impurity layer 33 is once swept out to the N-type silicon substrate 31, and the photodiode N-type impurity layer 33 becomes empty. From there, the charge is accumulated in the photodiode N-type impurity layer 33 during the charge accumulation time T2, and then the charge is read out / transferred / output at the read transfer time T3. Note that, during the operation of one frame, light is constantly radiated to the solid-state imaging device 1300.
  • the charge sweeping operation at the charge sweeping time T1 is referred to as an electronic shutter.
  • Automatic exposure adjustment can be performed by adjusting the time T1 for sweeping out charges to the N-type silicon substrate 31 by the electronic shutter.
  • the automatic exposure adjustment when the light incident on the solid-state imaging device 1300 is strong, as shown in FIG. 8A, the electric charge sweep time T1 in one frame is lengthened by an electronic shutter, The charge accumulation time T2 is shortened.
  • the charge sweep time T1 is shortened and the charge accumulation time T2 is lengthened by the electronic shutter.
  • the automatic exposure adjustment function can change the charge sweeping time T1 to the N-type silicon substrate 31 by the electronic shutter longer. This prevents the photodiode N-type impurity layer 33 from overflowing electric charges and causing the image to fly out.
  • the solid-state imaging device 1300 is a solid-state imaging device that performs charge accumulation / reading / transfer and all processing simultaneously on a visible light pixel and a near-infrared pixel
  • the visible light filter 39 is shown in FIG.
  • the sensitivity of the visible light pixel and the sensitivity of the near-infrared light pixel are greatly different as shown in FIGS. 32 (c) and (d), the following characteristics are obtained. There is a problem like this.
  • the near-infrared light filter 40 is composed of a film that does not transmit light shorter than the near-infrared wavelength, the charge accumulated in the photodiode N-type impurity layer 33 that generates the charge of the near-infrared image. The amount is small.
  • the charge accumulation time T2 is short according to the visible light pixel by automatic exposure adjustment (charge sweep time by the electronic shutter). T1 becomes long).
  • the charge accumulation amount of the near-infrared image that originally has a small charge accumulation amount is further reduced and the near-infrared image output becomes very small, so that a good and accurate image cannot be acquired.
  • the solid-state imaging device 100 is assumed not to transmit a specific wavelength in visible light in order to solve the above problem.
  • the visible light filter 8 is a filter film that does not transmit a longer wavelength than blue (490 nm).
  • the amount of light transmitted by the visible light filter 8 is smaller than, for example, when the visible light filter 8 transmits all visible light.
  • the visible light filter 39 has the same characteristics as the visible light filter 8, the difference between the amount of light transmitted by the visible light filter 39 and the amount of light transmitted by the near-infrared light filter 40. And the sensitivity difference between the visible light pixel and the near-infrared light pixel is reduced.
  • the solid-state image sensor 100 can shorten the charge discharge time T1 by the electronic shutter and lengthen the charge accumulation time T2 compared to the solid-state image sensor 1500. As a result, the solid-state imaging device 100 can increase the near-infrared image output as compared with the solid-state imaging device 1500. In other words, in the solid-state imaging device 100, even if automatic exposure adjustment (automatic electronic shutter processing) is performed, the output of the near-infrared light pixel does not become very small.
  • imaging is performed by simultaneously irradiating near-infrared light and visible light onto the object to be imaged, and information on the visible light image and near-infrared light image based on the charge generated in the photodiode impurity layer 2 is simultaneously transmitted to the outside. Even in the case of output, a more optimal exposure adjustment can be performed, and a good and accurate image can be acquired even in an environment of strong light such as sunlight.
  • the visible light filter 8 is a filter that does not transmit light having a wavelength longer than that of blue, it can be formed more easily than a filter that transmits a specific wavelength.
  • FIG. 9 is a diagram for explaining a complementary method for visible light pixel information and a complementary method for infrared light pixel information with respect to the solid-state imaging device 100.
  • FIG. 9 shows an example of output signal processing when the present invention is applied to an all-pixel readout type CCD solid-state imaging device having a total number of pixels of 1.3 million pixels.
  • the visible light filter 8 and the near-infrared light filter 9 are alternately arranged (for example, checkered pattern), so that the output of the CCD is from a pixel close to the output circuit unit to visible light pixel information.
  • near infrared light information are alternately output.
  • visible light pixel information is voltage information based on charges photoelectrically converted in the visible light pixel
  • information that was a near infrared light pixel is arranged by the near infrared light pixel. This is pixel information that is complemented by using visible light image information on the top, bottom, left, and right.
  • the information that was a visible light pixel is calculated from the information of the near-infrared light pixels of the upper, lower, left, and right pixels, and the near-infrared light pixel Supplement as information.
  • an image of 1.3 million pixels of visible light and 1.3 million pixels of near-infrared light can be obtained by relatively simple information processing of pixels.
  • “near-infrared light pixel information” is voltage information due to charges photoelectrically converted in the near-infrared light pixel
  • “information that was a visible light pixel” is the arrangement of visible light pixels. This is pixel information that is complemented using near-infrared light image information on the top, bottom, left, and right.
  • More specific processing includes using pixel information obtained from a plurality of visible light pixels adjacent to the near-infrared light pixel, and complementing the pixel information of the near-infrared light pixel to complement all pixels related to visible light. Get information.
  • the pixel information of the near-infrared light pixel is complemented by using the average values of the visible light images adjacent to the near-infrared light pixel in the vertical and horizontal directions. According to the above configuration, it is possible to perform image processing for obtaining information on all pixels of a visible light image with higher accuracy.
  • the pixel information of the visible light pixel is complemented to obtain all pixel information related to the near-infrared light.
  • pixel information of visible light pixels is complemented using an average value of near-infrared light images adjacent to the visible light pixels in the upper, lower, left, and right directions.
  • FIGS. 10A and 10B are diagrams showing modifications of the arrangement method of the filters of the visible light filter 8 and the near-infrared light filter 9, respectively.
  • the arrangement of the visible light pixels and the near-infrared light pixels is not particularly limited as long as half of the total number of pixels is arranged, and the arrangement method shown in these drawings may be adopted. .
  • the checkered arrangement of the visible light filter 8 and the near-infrared light filter 9 has the following advantages.
  • the number of pixels that can be truly obtained by photoelectric conversion between the visible light image and the near-infrared light image is half the total number of pixels (for example, 1.3 million pixels).
  • the manufactured filter is particularly thick, particularly in the near-infrared pixel, the filter is thick, and the visible light pixel. Then, when forming a filter such that the filter is thin, there is a possibility that considerable unevenness may be formed on the element.
  • the variation (irregularity) in the element structure causes unevenness in a later process, and the photographed image may be uneven during photographing. Therefore, it is preferable to suppress unevenness in the element structure as much as possible.
  • the filter arrangement as shown in FIGS.
  • the number of visible light pixels and the number of near-infrared light pixels may be equal to half the total number of pixels, respectively, so that all visible light pixels in all vertical columns and near-infrared pixels in all vertical columns are alternately arranged. You may arrange.
  • the vertical column that was a near-infrared light pixel does not have any information obtained by truly photoelectrically converting visible light, and was obtained by calculation. Since it becomes information, there is a possibility that it is slightly disadvantageous in terms of resolution.
  • FIG. 11 is a diagram for explaining the configuration of the solid-state imaging device according to the second embodiment of the present invention.
  • the solid-state imaging device 100A according to the second embodiment is an example of a variation in transmission wavelength setting of each filter in the solid-state imaging device 100.
  • 11A is a cross-sectional view showing the structure of the solid-state imaging device 100A
  • FIGS. 11B and 11C are graphs showing the optical characteristics of the respective filters.
  • FIG. ) And (e) are graphs showing the optical characteristics of the respective pixels.
  • FIG. 11A corresponds to the cross-sectional view taken along the line AA ′ shown in FIG. As shown in FIGS.
  • the solid-state imaging device 100A in the solid-state imaging device 100A, a combination of a visible light filter 8A and a near-infrared light filter 9 is used.
  • the visible light filter 8A is a filter film that does not transmit longer wavelengths than the green wavelength (570 nm). Thereby, the solid-state imaging device 100A can form a filter film more easily than the solid-state imaging device 100.
  • FIG. 12 is a diagram for explaining the configuration of the solid-state imaging device according to the third embodiment of the present invention.
  • the solid-state imaging device 100B according to the third embodiment is another example of variations in transmission wavelength setting of each filter in the solid-state imaging device 100.
  • 12A is a cross-sectional view showing a cross-sectional structure of the solid-state imaging device 100B
  • FIGS. 12B and 12C are graphs showing optical characteristics of the respective filters.
  • (D) * (e) is a graph which shows the optical characteristic of each pixel.
  • FIG. 12A corresponds to a cross-sectional view taken along the line AA ′ shown in FIG. As shown in FIGS.
  • the solid-state imaging device 100B in the solid-state imaging device 100B, a combination of a visible light filter 8B and a near-infrared light filter 9 is used.
  • the visible light filter 8B transmits only a specific wavelength.
  • the visible light filter 8B is, for example, a filter film that transmits only the range of 450 to 470 nm.
  • the solid-state imaging device 100B can further reduce the sensitivity difference between the visible light pixel and the near-infrared light pixel as compared with the solid-state imaging device 100.
  • the specific wavelength may be, for example, a green wavelength or a blue and green wavelength.
  • the photodiode impurity layer 2 (formed by impure portion injection into the silicon substrate 1) of the visible light pixel is sensitive not only to visible light but also to the near infrared wavelength region.
  • the imaging optical system is provided with an IR cut filter (made up of a film that does not transmit light of near infrared wavelength or more) that cuts the wavelength of near infrared light or more (about 800 nm or more).
  • the solid-state imaging device 100 / 100A / 100B is suitable for use in vein imaging.
  • various proposals have been made (for example, plants and fruits). Nurturing status, food spoilage inspection, spot detection on human skin, etc.).
  • the detection wavelength needs to be more peaky (photographed only with a more limited wavelength).
  • Even in vein authentication there is a possibility that the accuracy of authentication increases when the image is captured at a more limited wavelength.
  • the filter characteristics are limited, it is difficult to obtain the desired spectral characteristics only by forming a single-layer filter, and it is necessary to make a hybrid filter structure with two layers of filters. is there.
  • the visible light filter 8B that transmits only light of a specific wavelength is, as shown in FIG. 13, a hybrid filter structure in which a first filter and a second filter, which are organic filters or inorganic filters, are stacked. Can be formed. Details of the hybrid structure will be described later.
  • FIG. 13 is a schematic diagram for obtaining a desired transmitted light wavelength using a two-layer filter.
  • the transmission wavelength setting of each filter is configured by selecting and combining a color filter for visible light photography and a color filter for near-infrared light photography according to the photographing system, authentication system, or object to be emphasized. May be.
  • FIG. 14 is a cross-sectional view for explaining an example of forming a filter of the solid-state imaging device 100 according to Embodiment 1 of the present invention.
  • the solid-state imaging device 100 shown in FIG. 1 and the solid-state imaging device 100C shown in FIG. 14 are replaced with a visible light filter 8C and a near-infrared light filter 9 instead of the visible light filter 8 and the near-infrared light filter 9. The difference is that the filter 9C is used.
  • the solid-state imaging device 100C has the same configuration as the solid-state imaging device 100 except for the visible light filter 8C and the near-infrared light filter 9C.
  • Both the visible light filter 8C and the near-infrared light filter 9C are organic filters (consisting of a film in which an organic film is mixed with a material that absorbs light of a specific wavelength).
  • the visible light filter 8C and the near-infrared light filter 9C are a mixture of a pigment or dye having a characteristic of absorbing light of a specific wavelength in an organic material such as acrylic and a photosensitive material for patterning. It is made of only organic materials.
  • an organic filter as described above, a pigment or dye material that absorbs a specific wavelength in an organic material and a photosensitive material for pattern formation are generally used.
  • the filter can be formed in a relatively simple process because it can be formed by spin coating, pattern formation (pattern exposure), and development. However, if the ground irregularities previously formed are large, spin coating can be performed. There is a demerit that unevenness is likely to occur.
  • FIG. 15 is a cross-sectional view for explaining a modified example of the filter forming method of the solid-state imaging device 100.
  • the solid-state imaging device 100D shown in FIG. 15 and the solid-state imaging device 100C shown in FIG. 14 are replaced with a visible light filter 8C and a near-infrared light filter 9C instead of the visible light filter 8C and the near-infrared light filter 9C.
  • the other points are the same except that the filter 9D is provided.
  • the visible light filter 8D and the near-infrared light filter 9D are formed of only an inorganic material having a characteristic of reflecting a specific wavelength by a thin film laminated structure of materials having different refractive indexes.
  • both the visible light filter 8D (color filter for visible light photography) and the near infrared light filter 9D (color filter for near infrared light photography) are both inorganic.
  • a filter consisting of a film that reflects light of a specific wavelength by a laminated structure of inorganic films is used.
  • an inorganic filter in the case of an inorganic filter, it can be formed in the normal first half of the semiconductor manufacturing process, but because it has a laminated structure of about 10 thin films, its film formation / etching process is difficult. There is a demerit that the unevenness of the element becomes very large.
  • FIG. 16A is a diagram showing the film thickness of each layer constituting the inorganic filter
  • FIG. 16B is a graph showing the simulation result of the transmittance of the multilayer film of the inorganic filter.
  • an inorganic filter that transmits only light of a desired wavelength can be formed by selecting the refractive index of the laminated film, the number of laminated layers, and the film thickness.
  • FIG. 17 is a view showing an electron micrograph of an actually produced inorganic multilayer filter. Note that FIG. 17 shows an example of a structural film that is different from the simulation results of (a) and (b) of FIG.
  • FIG. 18 is a cross-sectional view for explaining still another example of forming the filter of the solid-state imaging device 100.
  • the solid-state imaging device 100E shown in FIG. 18 and the solid-state imaging device 100C shown in FIG. 14 are replaced with a visible light filter 8C and a near-infrared light filter 9C instead of the visible light filter 8C and the near-infrared light filter 9C.
  • the other points are the same except that the filter 9E is provided.
  • the visible light filter 8E and the near-infrared light filter 9E for example, a filter that cuts IR (cuts longer wavelengths than near-infrared light), or transmits light of only red wavelength, only green wavelength, or only blue wavelength.
  • the filter can be formed with a single layer organic filter (organic material mixed with a material that absorbs light of a specific wavelength). However, they do not necessarily transmit only light having a desired wavelength, but transmit light having a wavelength in the vicinity thereof or light having a wavelength apart to some extent. In order to limit the wavelength of light transmitted through each filter, for example, it is necessary to use not only a single-layer organic filter but also a hybrid filter in which another organic filter or an inorganic filter is combined.
  • a first filter for visible light 111 color filter for photographing visible light
  • a first filter for near infrared light 112 near infrared light photographing
  • Each color filter is composed of an organic filter (consisting of an organic film mixed with a material that absorbs at least a specific wavelength of light).
  • the visible light second filter 113 visible light color filter
  • the near infrared light second filter 114 near infrared light color filter
  • the filter a film that reflects light of a specific wavelength by a laminated structure of inorganic films).
  • the visible light filter 8E is configured by laminating a visible light first filter 111 on a visible light second filter 113.
  • the near-infrared light filter 9E is configured by stacking a near-infrared light first filter 112 on a near-infrared light second filter 114.
  • the visible light filter 8E may be a laminated (hybrid) filter of an IR cut filter and a blue wavelength transmission filter.
  • the selection range of the transmission wavelength can be further expanded by using the hybrid structure using both the organic filter film and the inorganic filter film.
  • FIG. 19 is a cross-sectional view for explaining still another example of forming the filter of the solid-state imaging device 100.
  • the solid-state imaging device 100F shown in FIG. 19 and the solid-state imaging device 100C shown in FIG. 14 are replaced with a visible light filter 8C and a near-infrared light filter 9C, and a visible light filter 8F and a near-infrared light filter.
  • the other points are the same except that the filter 9F is provided.
  • the selection range of the transmission wavelength can be further expanded by using a hybrid structure in which two or more layers of the organic filter film described above are stacked.
  • the solid-state imaging device 100F includes a first filter for visible light 120 (color filter for photographing visible light) and a first filter for near infrared light 121 (near infrared light photographing).
  • Each color filter is composed of an organic filter (consisting of an organic film mixed with a material that absorbs at least a specific wavelength of light).
  • the second filter 122 for visible light (color filter for photographing with visible light) and the second filter for near infrared light 123 (color filter for photographing with near infrared light) are also organic filters (organic It is composed of a film in which a material that absorbs light of a specific wavelength is mixed into the system film.
  • the visible light filter 8F is configured by laminating the visible light first filter 120 on the visible light second filter 122.
  • the near-infrared light filter 9 ⁇ / b> F is configured by stacking a near-infrared light first filter 121 on a near-infrared light second filter 123.
  • FIG. 20 is a cross-sectional view for explaining still another example of forming the filter of the solid-state image sensor 100.
  • the solid-state imaging device 100G shown in FIG. 20 and the solid-state imaging device 100C shown in FIG. 14 replace the visible light filter 8C and the near-infrared light filter 9C with a visible light filter 8G and a near-infrared light filter.
  • the other points are the same except that the filter 9G is provided.
  • the selection range of the transmission wavelength can be further expanded by using a hybrid structure in which two or more layers of the inorganic filter film described above are stacked.
  • the solid-state imaging device 100G includes a first filter for visible light 130 (color filter for photographing visible light) and a first filter for near infrared light 131 (near infrared light photographing).
  • Each color filter is composed of an inorganic filter (consisting of a film that reflects light of a specific wavelength by a laminated structure of inorganic films).
  • the second filter 132 for visible light (color filter for photographing with visible light) and the second filter for near infrared light 133 (color filter for photographing with near infrared light) are respectively inorganic filters (inorganic It is composed of a film that reflects light of a specific wavelength due to the laminated structure of the system film.
  • the visible light filter 8G is configured by laminating the first visible light filter 130 on the second visible light filter 132.
  • the near-infrared light filter 9G is configured by stacking a near-infrared light first filter 131 on a near-infrared light second filter 133.
  • the target spectrum can be obtained with a single-layer structure of an organic filter that is easy to form. It is preferable to make the structure complicated to a hybrid structure of an inorganic filter and an inorganic filter (however, the above-mentioned problem of unevenness during spin coating can be improved to some extent).
  • a high-speed, high-accuracy vein (artery) authentication / palmprint authentication system is constructed with a simple (small) and low-cost imaging system. can do.
  • security is improved by authenticating an individual from two pieces of biological information.
  • the vein information is invisible information, it is difficult to forge and the security can be further improved.
  • more optimal exposure adjustment can be performed, and a good and accurate image can be acquired even in an environment of strong light such as sunlight.
  • FIG. 21 is a diagram for explaining the configuration of a CMOS solid-state imaging device 200 according to Embodiment 4 of the present invention.
  • FIG. 21A is a diagram illustrating a state of a filter array when the CMOS solid-state imaging device 200 is viewed from the light incident side.
  • FIG. 21B is a cross-sectional view taken along the line CC ′ shown in FIG. As shown in FIG.
  • the CMOS solid-state image sensor 200 (solid-state image sensor) includes a silicon substrate 201 (semiconductor substrate), a photodiode impurity layer 202 (photoelectric conversion unit), a high-concentration impurity layer 203, a gate.
  • An electrode 204, a metal wiring 205, a visible light filter 206 (color filter for photographing visible light), a near infrared light filter 207 (color filter for photographing near infrared light), and a condensing microlens 208 are provided. . Note that the configuration of the gate electrode 204, the metal wiring 205, and the condensing microlens 208 has little relation to the essence of the present invention, and thus the description thereof is omitted here.
  • the silicon substrate 201 is a semiconductor substrate having one conductivity based on silicon.
  • one conductivity is either p-type conductivity or n-type conductivity.
  • Photodiode impurity layer 202 high-concentration impurity layer 203 Inside the silicon substrate 201, a plurality of photodiode impurity layers 202, which are regions that generate charges by photoelectrically converting received light, and a plurality of high-concentration impurity layers, which are regions to which the generated charges are transferred 203 is formed.
  • each of the plurality of visible light filters 206 and the same number of near-infrared light filters 207 are associated with each of the plurality of photodiode impurity layers 202. Two-dimensionally distributed. For this reason, when acquiring information on all the pixels of the visible light image, information on pixels associated with a specific near-infrared light filter 207 (hereinafter referred to as “near-infrared light pixels”) It is possible to complement by using information of pixels (hereinafter referred to as “visible light pixels”) associated with the visible light filter 206 dispersed and arranged.
  • the information about the specific visible light image may be supplemented using information about the infrared light pixels arranged in the vicinity thereof. It becomes possible. As described above, the image processing can be simplified, and both the visible light image and the near infrared light image can be simultaneously acquired.
  • each of the visible light filter 206 and the near-infrared light filter 207 is connected to the condensing microlens 208 on the photodiode impurity layer 202.
  • they are arranged alternately (for example, checkered pattern).
  • information on a specific visible light pixel may be supplemented using information on infrared light pixels arranged on the top, bottom, left, and right of the pixel. It becomes possible. Therefore, compared to a configuration in which the color filter for visible light photography and the color filter for near infrared light photography are not arranged alternately, the information of all pixels of the visible light image or the near infrared light image is obtained.
  • the image processing for obtaining can be simplified.
  • the visible light filter 206 does not transmit a specific wavelength in visible light. In this embodiment, the visible light filter 206 does not transmit longer wavelengths than blue light. Specifically, the visible light filter 206 cuts light having a wavelength longer than that of visible light blue (490 nm), for example.
  • the near-infrared light filter 207 does not transmit light having a wavelength shorter than the visible light wavelength. Specifically, the near-infrared light filter 207 cuts light having a wavelength shorter than 750 nm, for example.
  • the difference between the amount of light transmitted through the visible light filter 206 and the amount of light transmitted through the near-infrared light filter 207 is reduced, and the sensitivity difference between the visible light pixel and the near-infrared light pixel is reduced.
  • the CMOS type solid-state imaging device 200 performs the automatic exposure adjustment (automatic electronic shutter process)
  • the output of the near-infrared light pixel does not become very small. Therefore, optimal exposure adjustment can be performed, and a good and accurate image can be acquired even in an environment of strong light such as sunlight.
  • the solid-state imaging device (100) receives a plurality of near-infrared light and visible light that are simultaneously irradiated on an object to be imaged, and generates a plurality of charges by photoelectrically converting the received light.
  • a plurality of near-infrared light photographing color filters (near-infrared light filter 9) associated with each of the remaining photoelectric conversion units, the visible light photographing color filter and the near-infrared light
  • the color filter for light photographing is two-dimensionally dispersed, and information on a visible light image and a near-infrared light image based on the charge generated by the photoelectric conversion unit is output to the outside at the same time, and the visible light photographing Color filter for visible light Kicking does not transmit light of a specific wavelength.
  • the near-infrared light color filter and the visible light color filter associated with the photoelectric conversion unit are two-dimensionally distributed. Therefore, in an imaging system including the solid-state imaging device, image processing is simplified, and both a captured image of visible light and a captured image of near-infrared light can be simultaneously acquired.
  • the amount of light transmitted by the visible light photographing color filter of the present invention is, for example, all Compared with a visible light photographing color filter that transmits visible light, the amount of light transmitted is reduced. In other words, the difference between the amount of light transmitted by the visible light color filter and the amount of light transmitted by the near-infrared color filter is reduced, so that the visible light pixel and the near-infrared light pixel The sensitivity difference is reduced.
  • the visible light photographing that transmits all visible light is performed.
  • the charge discharging time by the electronic shutter can be shortened and the charge accumulation time can be lengthened.
  • the near-infrared image output is larger than the color filter for visible light photography that transmits all visible light, so it is possible to adjust exposure more optimally and in strong light environments such as sunlight. Even good and accurate images can be obtained.
  • the color filter for visible light imaging does not transmit light having a longer wavelength than blue.
  • a filter can be created more easily than forming a filter that transmits a specific wavelength.
  • the visible light photographing color filter may be a film that does not transmit light having a wavelength of 490 nm or more.
  • the limit of the amount of incident light can be further reduced, and accordingly, the limit of the amount of light incident on the color filter for near-infrared light photography is also reduced, so that more optimal exposure adjustment can be performed.
  • an organic film and an inorganic film as a color filter for visible light photography, manufacturing is facilitated and cost reduction can be realized.
  • the color filter for visible light imaging does not transmit light having a longer wavelength than green.
  • a filter can be formed more easily than a filter that does not transmit light having a longer wavelength than blue.
  • the color filter for visible light photography is a film.
  • the color filter for visible light imaging (visible light filter 8B) transmits only light of a specific wavelength.
  • the visible light photographing color filter (visible light filter 8B) is preferably a film.
  • the solid-state imaging device (100) according to the eighth aspect of the present invention is the solid-state imaging device (100) according to any one of the first to seventh aspects, wherein the near-infrared light color filter (near-infrared light filter 9) has a near-infrared wavelength. It is preferable that the film does not transmit light having a shorter wavelength.
  • the solid-state imaging device (100) according to the ninth aspect of the present invention is the solid-state imaging device (100) according to any one of the first to eighth aspects, wherein the near-infrared light color filter (near-infrared light filter 9) has a specific wavelength.
  • the near-infrared light color filter near-infrared light filter 9
  • a film that transmits only light is preferable.
  • a solid-state imaging device suitable for, for example, growing conditions of plants and fruits, food spoilage inspection, spot detection on human skin, and the like is realized. be able to.
  • the solid-state imaging device (100) according to the tenth aspect of the present invention is preferably capable of reading all pixels in any one of the first to ninth aspects.
  • the image processing for obtaining information of all pixels of the visible light image or the near-infrared light image can be performed more easily and at a higher speed.
  • the solid-state imaging device (100C) according to the eleventh aspect of the present invention is the solid-state imaging device (100C) according to any one of the first to tenth aspects, wherein the visible light photographing color filter (visible light filter 8C) and the near infrared photographing color.
  • the filter near-infrared light filter 9C is preferably formed of a film in which an organic film is mixed with a material that absorbs at least light of a specific wavelength.
  • the filter can be formed in a relatively simple process since it can be formed by spin coating on the element (wafer), pattern formation (pattern exposure), and development.
  • the solid-state imaging device (100D) is the color filter for visible light photography (filter 8D for visible light) and the color for near-infrared light photography in any of the above aspects 1 to 11.
  • the filter near-infrared light filter 9D
  • the filter is preferably formed of a film that reflects light of a specific wavelength by a laminated structure of inorganic films.
  • the filter can be formed in the normal first half of the semiconductor manufacturing process.
  • the solid-state imaging device (100E) is the color filter for visible light photography (visible light filter 8E) and the color filter for near-infrared light photography in any of the above aspects 1 to 12.
  • Near-infrared filter 9E includes a film in which a material that absorbs at least a specific wavelength of light is mixed in an organic film, and a film that reflects light of a specific wavelength by a laminated structure of inorganic films. It is preferable that both are formed.
  • the solid-state imaging device (100) according to the fourteenth aspect of the present invention is the solid-state imaging device (100) according to any one of the first to thirteenth aspects, wherein the number of the visible light photographing color filters (the visible light filter 8) and the near infrared light photographing.
  • the number of color filters (near-infrared light filter 9) is preferably the same.
  • the pixels associated with the color filters for near-infrared light photography it is possible to supplement the pixel information associated with the color filter for near-infrared light photography by using the pixel information associated with the color filter for visible light photography arranged in the vicinity. it can.
  • Photodiode impurity layer 8,8A, 8B, 8C, 8D, 8E, 8F, 8G Visible light filter (color filter for visible light photography) 9, 9C, 9D, 9E, 9F, 9G Near Infrared Light Filter (Color Filter for Near Infrared Light Photography) 100 / 100A / 100B / 100C / 100D / 100E / 100F / 100G Solid-state image sensor 200 CMOS solid-state image sensor (solid-state image sensor) 206 Visible light filter (color filter for visible light photography) 207 Near-infrared filter (color filter for near-infrared light photography) 500 Imaging system

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Abstract

Un élément d'imagerie à semi-conducteur selon l'invention (100) comprend une pluralité de couches d'impuretés de photodiode (2) pour convertir la lumière en électricité, et un filtre (8) pour la lumière visible et un filtre (9) pour la lumière proche infrarouge. Une image de lumière visible et une image de lumière infrarouge proche sont délivrées en sortie à l'extérieur en même temps, et le filtre (8) pour la lumière visible ne permet pas à une lumière d'une longueur d'onde spécifique en sortie de la lumière visible de passer à travers.
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