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WO2017068959A1 - Élément de batterie solaire du type à électrode à contact arrière et procédé de fabrication pour élément de batterie solaire du type à électrode à contact arrière - Google Patents

Élément de batterie solaire du type à électrode à contact arrière et procédé de fabrication pour élément de batterie solaire du type à électrode à contact arrière Download PDF

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Publication number
WO2017068959A1
WO2017068959A1 PCT/JP2016/079395 JP2016079395W WO2017068959A1 WO 2017068959 A1 WO2017068959 A1 WO 2017068959A1 JP 2016079395 W JP2016079395 W JP 2016079395W WO 2017068959 A1 WO2017068959 A1 WO 2017068959A1
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Prior art keywords
impurity diffusion
conductivity type
diffusion region
type impurity
solar cell
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English (en)
Japanese (ja)
Inventor
親扶 岡本
嘉高 銭谷
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a back electrode type solar battery cell and a method for manufacturing a back electrode type solar battery cell.
  • This application claims priority based on Japanese Patent Application No. 2015-207228, which is a Japanese patent application filed on October 21, 2015, and incorporates all the content described in the Japanese patent application. .
  • the most manufactured and sold solar cells have a structure in which electrodes are formed on the light receiving surface on the side where sunlight enters and the back surface on the opposite side of the light receiving surface, respectively. is there.
  • Patent Document 1 discloses a solar cell in which electrodes are respectively formed on an n-doped region and a p-doped region on the back surface of a substrate piece.
  • the embodiment disclosed herein includes a first conductivity type semiconductor substrate, a first conductivity type impurity diffusion region on one side of the semiconductor substrate, and a second conductivity adjacent to the first conductivity type impurity diffusion region.
  • Type impurity diffusion region a dielectric film on the surface of the semiconductor substrate, a first electrode electrically connected to the first conductivity type impurity diffusion region, and a second electrode electrically connected to the second conductivity type impurity diffusion region.
  • the first conductivity type impurity diffusion region includes a first line-shaped region extending in the first direction, and the first electrode includes a plurality of dielectric films provided at intervals.
  • the second conductivity type is electrically connected to the first conductivity type impurity diffusion region through the first opening, and the second electrode is connected to the second conductivity type through the plurality of second openings provided at intervals in the dielectric film. It is a back electrode type solar cell electrically connected to the impurity diffusion region.
  • the embodiment disclosed herein includes a first conductivity type impurity diffusion region including a first line-shaped region extending in a first direction on a surface of one side of a semiconductor substrate, and a first conductivity type impurity diffusion.
  • a step of forming a second electrode electrically connected to the second conductivity type impurity diffusion region through the second opening The method of manufacturing the back electrode type solar cell.
  • a back electrode type solar cell capable of improving the characteristics can be obtained.
  • FIG. 2 is a schematic cross-sectional view of a back electrode type solar battery cell according to Embodiment 1.
  • FIG. 3 is a schematic plan view of the back surface of the back electrode type solar battery cell of Embodiment 1.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the process of the example of the manufacturing method of the back electrode type solar battery cell according to the first embodiment.
  • FIG. 2 is a schematic plan view illustrating a part of an example of the manufacturing method of the back electrode type solar battery cell of Embodiment 1 after the formation of a first conductivity type impurity diffusion region and a second conductivity type impurity diffusion region. It is a typical top view of a semiconductor substrate.
  • FIG. 3 is a schematic plan view of the back surface of the back electrode type solar battery cell of Embodiment 1.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the process of the example of the manufacturing method of the back electrode type solar battery cell according to the first embodiment.
  • FIG. 5 is a schematic cross-sectional view illustrating a part of the process of the example of the manufacturing method of the back electrode type solar battery cell of Embodiment 1, and is a schematic cross-sectional view along VV of FIG. 4.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the process of the example of the manufacturing method of the back electrode type solar battery cell according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the process of the example of the manufacturing method of the back electrode type solar battery cell according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the process of the example of the manufacturing method of the back electrode type solar cell according to the first embodiment, and a semiconductor after the formation of a plurality of first openings and a plurality of second openings It is typical sectional drawing of a board
  • FIG. 3 is a schematic plan view illustrating a part of the process of the example of the manufacturing method of the back electrode type solar cell according to the first embodiment, and a semiconductor after forming the plurality of first openings and the plurality of second openings. It is a typical top view of a substrate.
  • FIG. 3 is a schematic plan view illustrating a part of the process of the example of the method for manufacturing the back electrode type solar battery cell according to the first embodiment.
  • FIG. 6 is a schematic plan view of the back surface of a back electrode type solar battery cell according to Embodiment 2.
  • FIG. 6 is a schematic plan view of the back surface of a back electrode type solar battery cell according to Embodiment 3.
  • FIG. 6 is a schematic plan view of the back surface of a back electrode type solar battery cell according to Embodiment 4.
  • FIG. 5 it is a typical top view of the back surface of the semiconductor substrate after forming the 1st conductivity type impurity diffusion region and the 2nd conductivity type impurity diffusion region.
  • it is a typical top view of the back surface of the semiconductor substrate after forming a some 1st opening part and a some 2nd opening part in a dielectric film.
  • it is a typical top view of the back surface of the semiconductor substrate after forming the 1st electrode which covers a some 1st opening part, and the 2nd electrode which covers a some 2nd opening part.
  • the back electrode type solar cell of Embodiment 1 includes a first conductivity type semiconductor substrate 1, a first conductivity type impurity diffusion region 2 provided on the back surface which is a surface on one side of the semiconductor substrate 1, and a first And a second conductivity type impurity diffusion region 3 adjacent to the conductivity type impurity diffusion region 2. Also, a dielectric film 4 is provided on the back surface of the semiconductor substrate 1, and the first electrode 5 electrically connected to the first conductivity type impurity diffusion region 2 through the dielectric film 4 and the second conductivity. A second electrode 6 electrically connected to the type impurity diffusion region 3 is provided.
  • An uneven structure 1 a such as a texture structure is formed on the light receiving surface opposite to the back surface of the semiconductor substrate 1, and on the light receiving surface of the semiconductor substrate 1, for the purpose of preventing reflection on the light receiving surface of the semiconductor substrate 1.
  • a dielectric film 7 is provided.
  • FIG. 2 shows a schematic plan view of the back surface of the back electrode type solar battery cell of Embodiment 1.
  • the linear first electrode 5 and the second electrode 6 extending in the first direction 21 are spaced apart from one another in the second direction 22 intersecting the first direction 21. They are arranged alternately.
  • the first conductivity type semiconductor substrate 1 is an n-type single crystal silicon substrate
  • the first conductivity type impurity diffusion region 2 is an n type impurity diffusion region
  • the second conductivity type impurity diffusion region 3 is p.
  • the first direction 21 and the second direction 22 form an angle of 90 °, but the angle formed by the first direction 21 and the second direction 22 is limited to 90 °. is not.
  • a first conductivity type semiconductor substrate 1 is prepared.
  • an n-type single crystal silicon substrate can be preferably used, but is not limited to an n-type single crystal silicon substrate, and for example, a conventionally known p-type semiconductor substrate may be used. it can.
  • FIG. 4 is a schematic plan view of the semiconductor substrate 1 after the formation of the first conductivity type impurity diffusion region 2 and the second conductivity type impurity diffusion region 3, and FIG. 5 is taken along line VV in FIG. A schematic cross-sectional view is shown.
  • the first conductivity type impurity diffusion region 2 can be formed by diffusing the first conductivity type impurity on the back surface of the semiconductor substrate 1, and when the first conductivity type impurity diffusion region 2 is an n type impurity diffusion region.
  • the first conductivity type impurity for example, phosphorus can be diffused.
  • the second conductivity type impurity diffusion region 3 can be formed by diffusing the second conductivity type impurity on the back surface of the semiconductor substrate 1, and the second conductivity type impurity diffusion region 3 is a p-type impurity diffusion region.
  • boron can be diffused as the second conductivity type impurity.
  • a first conductivity type impurity diffusion region 2 is formed on the back surface of the semiconductor substrate 1, and each of the two first conductivity type impurity diffusion regions 2 extends in the first direction 21. It is a line-shaped area
  • Each of the two first conductivity type impurity diffusion regions 2 has an island shape, and the second conductivity type impurity diffusion region 3 is disposed so as to surround each of the two first conductivity type impurity diffusion regions 2. .
  • the dielectric film 4 is formed on the back surface of the semiconductor substrate 1 and the uneven structure 1 a is formed on the light receiving surface of the semiconductor substrate 1.
  • the method of forming the dielectric film 4 is not particularly limited, and examples thereof include a method of forming a silicon nitride film by a plasma CVD (Chemical Vapor Deposition) method.
  • the formation method of the uneven structure 1a is not specifically limited, For example, methods, such as texture etching, are mentioned.
  • a dielectric film 7 is formed on the light receiving surface of the semiconductor substrate 1.
  • a method for forming the dielectric film 7 is not particularly limited, and examples thereof include a method for forming a silicon nitride film by a plasma CVD method or the like.
  • a plurality of first openings 11 and a plurality of second openings 12 are formed in the dielectric film 4 formed on the back surface of the semiconductor substrate 1.
  • Each of the plurality of first openings 11 is formed to expose the first conductivity type impurity diffusion region 2 on the back surface of the semiconductor substrate 1, and each of the plurality of second openings 12 is a second surface on the back surface of the semiconductor substrate 1.
  • the conductive impurity diffusion region 3 is formed so as to be exposed.
  • the formation method of the some 1st opening part 11 and the some 2nd opening part 12 is not specifically limited, For example, photoetching etc. can be used.
  • FIG. 9 shows a schematic plan view of the back surface of the semiconductor substrate 1 after the formation of the plurality of first openings 11 and the plurality of second openings 12.
  • the plurality of first openings 11 and the plurality of second openings 12 are each formed in a circular dot shape.
  • a part of the first conductivity type impurity diffusion region 2 is exposed from each of the plurality of first openings 11, and a part of the second conductivity type impurity diffusion region 3 is exposed from each of the plurality of second openings 12. Is exposed.
  • 1st opening part 11 and 2nd opening part 12 are arranged along the 1st direction 21, respectively.
  • column of the 2nd opening part 12 which consists of the some 2nd opening part 12 are the following. They are alternately arranged in a row along the second direction 22 at intervals.
  • the linear first electrode 5 extending in the first direction 21 is formed so as to cover the row of the first openings 11, and the second opening is formed.
  • the line-shaped second electrode 6 extending in the first direction 21 is formed so as to cover the 12 rows.
  • the first electrode 5 is formed so as to be electrically connected to the first conductivity type impurity diffusion region 2 through the first opening 11 provided in the dielectric film 4, and the second electrode 6 is formed as a dielectric. It is formed so as to be electrically connected to the second conductivity type impurity diffusion region 3 through the second opening 12 provided in the body film 4.
  • the formation method of the first electrode 5 and the second electrode 6 is not particularly limited, but for example, a vapor deposition method or a sputtering method can be used.
  • the first electrode 5 is electrically connected to the first conductivity type impurity diffusion region 2 through the dot-shaped first opening 11, and the dot-shaped second opening is formed.
  • the second electrode 6 is electrically connected to the second conductivity type impurity diffusion region 3 through the portion 12.
  • the back electrode type solar battery cell of Embodiment 1 as compared with the solar battery of Patent Document 1, recombination of holes and electrons generated by the incidence of light on the semiconductor substrate 1 on the back surface of the semiconductor substrate 1 is performed. Since the area can be reduced, voltage loss can be reduced and characteristics can be improved. Further, the first conductive type impurity diffusion region 2 is formed on the back surface of the first conductive type semiconductor substrate 1 by the diffusion of the first conductive type impurity so as to extend in a line shape, thereby diffusing the first conductive type impurity.
  • the alignment of the first conductivity type impurity diffusion region 2 is facilitated, so that a back electrode type solar cell with improved characteristics can be obtained more easily. be able to.
  • the first conductivity type is n-type and the second conductivity type is p-type.
  • the first conductivity type is p-type and the second conductivity type is n-type. The same effect as described above can be obtained.
  • FIG. 11 the typical top view of the back surface of the back surface electrode type photovoltaic cell of Embodiment 2 is shown.
  • the back electrode type solar cell of Embodiment 2 is characterized in that the first electrode 5 and the second electrode 6 are each in the form of a circular dot. That is, in the back electrode type solar cell of the second embodiment, the circular dot-shaped first electrode 5 is diffused in the first conductivity type through each of the plurality of first openings 11 that are opened in a circular dot shape.
  • a circular dot-shaped second electrode 6 is provided so as to be electrically connected to the region 2 and opened in a circular dot shape, and the second conductive-type impurity diffusion region 3 passes through each of the plurality of second openings 12. It is provided so that it may be electrically connected to.
  • the first conductivity type impurity diffusion region 2 includes two first line-shaped regions 2a extending in a line in the first direction 21 with a space between each other, It includes two second line-shaped regions 2b extending in a line in the second direction 22 with a space between each other.
  • One end of each of the two first line-shaped regions 2a is connected by one second line-shaped region 2b, and the other end of each of the two first line-shaped regions 2a is one second.
  • the first conductivity type impurity diffusion region 2 is arranged so as to surround a part of the second conductivity type impurity diffusion region 3, and the other part of the second conductivity type impurity diffusion region 3 is the first conductivity type impurity diffusion region. 2 is arranged so as to surround 2.
  • Embodiment 3 other than the above is the same as that of Embodiment 1 and Embodiment 2, and therefore description thereof will not be repeated.
  • the first conductivity type impurity diffusion region 2 includes two first line-shaped regions 2a extending in a line shape in the first direction 21 with a space between each other. , One second line-shaped region 2b extending in a line shape in the second direction 22, and each intermediate portion of the two first line-shaped regions 2a is the second line-shaped region 2b. It is characterized by being connected by.
  • FIG. 14 is a schematic plan view of the back surface of the semiconductor substrate 1 after the first conductivity type impurity diffusion region 2 and the second conductivity type impurity diffusion region 3 are formed in the fifth embodiment.
  • the two first-conductivity-type impurity diffusion regions 2 are linearly formed so as to extend from one end 31 to the other end 32 of the back surface of the semiconductor substrate 1 in the first direction 21 with a space between each other.
  • the three second-conductivity-type impurity diffusion regions 3 are adjacent to the first-conductivity-type impurity diffusion region 2 and are spaced apart from each other, and the back surface of the semiconductor substrate 1 in the first direction 21 is formed. It is characterized by being formed in a line shape so as to extend from one end 31 to the other end 32.
  • a part of the first conductivity type impurity diffusion region 2 is formed on the dielectric film 4.
  • a plurality of exposed first openings 11 are formed, and a plurality of second openings 12 exposing a part of the second conductivity type impurity diffusion region 3 are formed.
  • the second electrode 6 is formed so as to be electrically connected to the first conductivity type impurity diffusion region 2 through the portion 11 and extends in the first direction 21 so as to cover the row of the second openings 12.
  • 4 is formed so as to be electrically connected to the second conductivity type impurity diffusion region 3 through the second opening 12 provided in the first electrode 4.
  • both the first electrode 5 and the second electrode 6 are formed in a line shape has been described.
  • at least one of the first electrode 5 and the second electrode 6 may be formed in a dot shape. .
  • the back electrode type photovoltaic cell of Embodiment 3 can be manufactured.
  • a first conductivity type semiconductor substrate, a first conductivity type impurity diffusion region, and a first conductivity type impurity diffusion region are adjacent to a surface on one side of the semiconductor substrate.
  • the first conductivity type impurity diffusion region includes a first line-shaped region extending in the first direction, and the first electrode is provided at a distance from the dielectric film.
  • the second electrode is electrically connected to the first conductivity type impurity diffusion region through the plurality of first openings, and the second electrode passes through the plurality of second openings provided at intervals in the dielectric film. It is a back electrode type solar cell electrically connected to the conductive impurity diffusion region. By setting it as such a structure, the back electrode type photovoltaic cell which can improve a characteristic can be obtained.
  • the first conductivity type impurity diffusion region may have an island shape. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the back electrode type solar cell according to the embodiment disclosed herein may include a plurality of first conductivity type impurity diffusion regions. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the second conductivity type impurity diffusion region may surround the first conductivity type impurity diffusion region. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the first conductivity type impurity diffusion region includes a plurality of first line-shaped regions and a second direction intersecting the first direction.
  • a plurality of first line-shaped regions may be connected by the second line-shaped region.
  • a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the first conductivity type impurity diffusion region includes two first linear regions and two second linear regions. , One end of each of the two first line-shaped regions is connected by one of the second line-shaped regions, and the other two ends of the first line-shaped regions are connected to the other of the second line-shaped regions.
  • the second conductivity type impurity diffusion region may be partially surrounded by the first conductivity type impurity diffusion region. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the first conductivity type impurity diffusion region includes two first linear regions and one second linear region. The middle of each of the two first linear regions may be connected by one of the second linear regions.
  • the first conductivity type impurity diffusion region may extend from one end to the other end of the surface of the semiconductor substrate in the first direction. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the second conductivity type impurity diffusion region extends in a line shape from one end to the other end of the surface of the semiconductor substrate in the first direction. May be. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the back electrode type solar cell according to the embodiment disclosed herein may include a plurality of second conductivity type impurity diffusion regions. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the back electrode type solar battery cell according to the embodiment disclosed herein may include a plurality of first conductivity type impurity diffusion regions. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the plurality of first openings are arranged in the first direction at intervals from each other to form a row of the first openings.
  • the plurality of second openings may be arranged in the first direction at intervals from each other to form a row of second openings. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the first opening row and the second opening row are mutually in a second direction intersecting the first direction.
  • One row may be alternately arranged at intervals. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the first opening and the second opening may be dot-shaped, and the first electrode and the second electrode may be dot-shaped. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • a first conductivity type impurity diffusion region including a first line-shaped region extending in a first direction on a surface of one side of a semiconductor substrate, and a first conductivity Forming a second conductivity type impurity diffusion region adjacent to the type impurity diffusion region, forming a dielectric film on the surface of the semiconductor substrate, and exposing the first conductivity type impurity diffusion region to the dielectric film Forming a plurality of first openings to be formed and a plurality of second openings exposing the second conductivity type impurity diffusion regions, and electrically connecting to the first conductivity type impurity diffusion regions through the first openings.
  • a method for manufacturing a back electrode type solar cell comprising: a step of forming a first electrode; and a step of forming a second electrode electrically connected to the second conductivity type impurity diffusion region through the second opening.
  • the first conductivity type impurity diffusion region may be formed in an island shape. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • a plurality of first conductivity type impurity diffusion regions may be formed. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the second conductivity type impurity diffusion region may be formed so as to surround the first conductivity type impurity diffusion region. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the first conductivity type impurity diffusion region includes a plurality of first line-shaped regions and intersects the first direction.
  • the second line-shaped region may be formed so as to include the second line-shaped region extending in the two directions, and a plurality of the first line-shaped regions may be connected by the second line-shaped region. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the first conductivity type impurity diffusion region includes two first line-shaped regions and includes the second line-shaped region.
  • the two first ends of the first line-shaped regions are connected by one of the second line-shaped regions, and the other two ends of the first line-shaped regions are It may be formed by being connected by another one of the two line-shaped regions so as to surround a part of the second conductivity type impurity diffusion region. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the first conductivity type impurity diffusion region includes two first line-shaped regions and includes the second line-shaped region.
  • One of the first line-shaped regions may be formed so as to be connected to each other by one of the second line-shaped regions. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the first conductivity type impurity diffusion region extends from one end to the other end of the surface of the semiconductor substrate in the first direction. It may be formed. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the second conductivity type impurity diffusion region extends in a line shape from one end to the other end of the surface of the semiconductor substrate in the first direction. May be formed. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • a plurality of second conductivity type impurity diffusion regions may be formed. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • a plurality of first conductivity type impurity diffusion regions may be formed. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the plurality of first openings are arranged in the first direction at intervals from each other, and the first opening is provided.
  • the plurality of second openings may be arranged in the first direction at intervals to form a row of the second openings. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the plurality of first openings and the plurality of second openings are a row of first openings and a row of second openings. May be arranged alternately in a row in a second direction that intersects the first direction, spaced apart from each other. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the first opening and the second opening are formed in a dot shape, and the first electrode and the second electrode are formed in a dot shape. May be. Also in this case, a back electrode type solar cell capable of improving the characteristics can be obtained.
  • the embodiment disclosed herein may be applicable to a back electrode type solar cell and a method for manufacturing a back electrode type solar cell.
  • SYMBOLS 1 Semiconductor substrate, 1a Uneven structure, 1st conductivity type impurity diffusion area, 2a 1st line-shaped area, 2b 2nd line-shaped area, 3rd 2nd conductivity type impurity diffusion area, 4 dielectric film, 1st Electrode, 6 second electrode, 7 dielectric film, 11 first opening, 12 second opening, 21 first direction, 22 second direction, 31 one end, 32 other end.

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Abstract

L'invention concerne un élément de batterie solaire du type à électrode à contact arrière qui comprend, sur une surface d'un substrat semi-conducteur (1) : une première région conductrice (2) de diffusion d'impuretés comprenant une première région en forme de ligne s'étendant dans une première direction (21) ; et une seconde région conductrice (3) de diffusion d'impuretés adjacente à la première région conductrice (2) de diffusion d'impuretés. Une première électrode (5) est connectée électriquement à la première région conductrice (2) de diffusion d'impuretés par l'intermédiaire d'une pluralité de premières ouvertures (11) situées, à un intervalle donné, dans un film diélectrique (4) sur la surface du substrat semi-conducteur (1). Une seconde électrode (6) est connectée électriquement à la seconde région conductrice (3) de diffusion d'impuretés par l'intermédiaire d'une pluralité de secondes ouvertures (12) situées, à un intervalle donné, dans le film diélectrique (4).
PCT/JP2016/079395 2015-10-21 2016-10-04 Élément de batterie solaire du type à électrode à contact arrière et procédé de fabrication pour élément de batterie solaire du type à électrode à contact arrière Ceased WO2017068959A1 (fr)

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JP2015-207228 2015-10-21
JP2015207228 2015-10-21

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CN116581171B (zh) * 2023-07-14 2023-11-07 金阳(泉州)新能源科技有限公司 无焊盘超细主栅背接触电池和背接触电池模组及制备方法
US12283638B2 (en) 2023-07-14 2025-04-22 Golden Solar (Quanzhou) New Energy Technology Co., Ltd. Non-solder pad ultrafine main busbar back-contact solar cell, back-contact solar cell module and preparation method thereof

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