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WO2017061448A1 - Dispositif de guide d'onde optique, dispositif de conversion photoélectrique, structure architecturale, appareil électronique et dispositif électroluminescent - Google Patents

Dispositif de guide d'onde optique, dispositif de conversion photoélectrique, structure architecturale, appareil électronique et dispositif électroluminescent Download PDF

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Publication number
WO2017061448A1
WO2017061448A1 PCT/JP2016/079575 JP2016079575W WO2017061448A1 WO 2017061448 A1 WO2017061448 A1 WO 2017061448A1 JP 2016079575 W JP2016079575 W JP 2016079575W WO 2017061448 A1 WO2017061448 A1 WO 2017061448A1
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Prior art keywords
optical waveguide
light
planar optical
layer
refractive index
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English (en)
Japanese (ja)
Inventor
石橋　晃
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Hokkaido University NUC
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Hokkaido University NUC
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Priority to JP2017544517A priority Critical patent/JP6763614B2/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the present invention relates to an optical waveguide device, a photoelectric conversion device, a building, an electronic device, and a light emitting device.
  • the three-dimensional spatial propagation light is converted into two-dimensional spatial propagation light, or the two-dimensional spatial propagation light is converted into a three-dimensional space.
  • An optical waveguide device suitable for use in conversion to propagating light a photoelectric conversion device suitable for use as a solar cell installed on a window of a building or house, a wall, a roof, or a display of various electronic devices, and the photoelectric conversion
  • the present invention relates to a light emitting device suitable for use as a building and an electronic apparatus using the device, and further as a lighting device.
  • the present inventor can first eliminate the insensitive region for incident light, can suppress the deterioration of the organic semiconductor due to the Stebler-Wronski effect and ultraviolet components, and can obtain high photoelectric conversion efficiency,
  • a photoelectric conversion device suitable for use as a solar cell and the like that is extremely easy to increase in area has been proposed (see Patent Document 1).
  • This photoelectric conversion device is provided at a structure that converts three-dimensional spatially propagated light into two-dimensional spatially propagated light, a planar optical waveguide that guides the two-dimensional spatially propagated light, and an end of the planar optical waveguide.
  • the photoelectric conversion semiconductor layer and is configured such that light incident on the main surface of the planar optical waveguide is guided in the planar optical waveguide and incident on the semiconductor layer.
  • the angle is substantially a right angle.
  • a main surface of the planar optical waveguide or a diffraction grating provided in the planar optical waveguide is used.
  • the most effective diffraction grating one having the following structure has been proposed (see paragraph 0073 of FIG. 23, FIG. 23 and FIG. 24).
  • a periodic concavo-convex structure is formed by periodically forming a convex portion having a rectangular cross section in a comb-tooth shape on a part of the main surface (light incident surface) of the planar optical waveguide. It becomes a diffraction grating.
  • a back metal made of aluminum (Al) that functions as a reflective film is formed over a larger area than the periodic uneven structure.
  • the interface between the back metal and the planar optical waveguide is formed in a sawtooth shape, and light hitting a minute inclined surface of the back metal on the sawtooth interface is reflected in various directions.
  • a redirection wave guide that can be called a direction-changing optical waveguide (redirected waveguide), which can change the direction of incident light, which is three-dimensional spatially propagated light, to form two-dimensional spatially propagated light, and then can guide it immediately in the lateral direction
  • a functional thin film structure is feasible. It is possible to cope with light of other wavelengths by appropriately changing the size and period of the convex portion.
  • the diffraction grating proposed in Patent Document 1 has a large wavelength dependency of diffraction efficiency, for example, a redirection in the traveling direction is widely supported corresponding to light in a wide wavelength band such as an optical spectrum of blackbody radiation. This is not easy to perform, and therefore the light propagation characteristics are not improved, and as a result, there is a problem that the photoelectric conversion efficiency of the photoelectric conversion device cannot be sufficiently improved.
  • the problem to be solved by the present invention is that it is possible to easily perform the redirection in the traveling direction in correspondence with light in a wide wavelength band, so that three-dimensional spatial propagation light in a wide wavelength band can be efficiently performed.
  • a converter and a building and an electronic device using the photoelectric converter are provided.
  • Another problem to be solved by the present invention is that, in the concentrating solar power generation, the temperature increase as a by-product due to the introduction of the condensed light cancels out the photoelectric conversion efficiency that is higher than that in the case without the original condensing. It is providing the photoelectric conversion apparatus which can prevent that.
  • Another problem to be solved by the present invention is that in the concentrating solar power generation using a lens or the like, the photoelectric conversion efficiency is lowered when the direct sunlight of the sun is lost, that is, when the diffused light becomes main.
  • Another problem to be solved by the present invention is that the insensitive region for incident light can be eliminated, the deterioration of the organic semiconductor due to the Stebbler-Lonsky effect and ultraviolet components can be suppressed, and extremely high photoelectric conversion efficiency can be achieved. It is an object of the present invention to provide a photoelectric conversion device suitable for use as a solar cell or the like that can be obtained and can be easily increased in area.
  • Still another problem to be solved by the present invention is that the redirection in the traveling direction can be easily performed in correspondence with light in a wide wavelength band emitted from a light source such as a semiconductor light emitting element.
  • An object of the present invention is to provide an optical waveguide device that can efficiently convert two-dimensional spatially propagated light in the wavelength band into three-dimensional spatially propagated light, and a light-emitting device that uses the three-dimensional spatially propagated light obtained by this optical waveguide device.
  • Still another problem to be solved by the present invention is to provide an optical waveguide device that can alleviate the problem of the right of sunshine due to the shadow of buildings such as buildings.
  • the present invention provides: Having a planar optical waveguide, The three-dimensional spatially propagated light incident from a plurality of directions within a solid angle range of 2 ⁇ toward the main surface of the planar optical waveguide is narrowed down to a solid angle ⁇ or less before entering the planar optical waveguide.
  • Light incident on the planar optical waveguide is incident on the planar optical waveguide, and propagates in the planar optical waveguide as two-dimensional spatial propagation light from the direction in which the narrowing is performed toward the opposite direction. It is an optical waveguide device.
  • the main surface of the planar optical waveguide means a surface on which light is incident from the outside and a layer having a refractive index anisotropy and a reflecting mirror, which will be described later, are provided.
  • the surface opposite to the main surface is referred to as the back surface.
  • the three-dimensional spatially propagated light incident from a plurality of directions within the range of the solid angle 2 ⁇ is narrowed down to the solid angle ⁇ or less and then incident on the planar optical waveguide.
  • Light that is incident on the planar optical waveguide in the opposite direction is configured to propagate in the planar optical waveguide as two-dimensional spatial propagation light.
  • the incidence of sunlight propagating in three-dimensional space it is possible to divide the space into two by narrowing the solid angle from the range of 2 ⁇ to ⁇ or less.
  • the direction in which the traveling direction is “left toward” to “same right” can be uniquely performed. This makes it possible to design spatial reversal symmetry and to set and define the left-right asymmetry clearly.
  • FIG. 1A three-dimensional spatially propagated light enters from a plurality of directions within a solid angle of 2 ⁇ toward the main surface of the planar optical waveguide.
  • the light incident area on the main surface of the planar optical waveguide is exemplarily surrounded by a broken line, but it goes without saying that light reception itself is performed by the entire planar optical waveguide.
  • the solid angle 2 ⁇ is also assumed to be diffused light during cloudy weather when the three-dimensional spatially propagated light is sunlight. As shown in FIG.
  • FIG. 1C is a cross-sectional view at one point in the above-described symmetry direction (a certain position y in the case of translational symmetry and a certain phase angle ⁇ in the case of rotational symmetry). With an appropriate structure setting, ⁇ ⁇ / 4 can be obtained.
  • the two-dimensional guided light is guided through the planar optical waveguide, that is, a two-dimensional space. Propagating light can be propagated.
  • the direction in which the three-dimensional spatially propagated light is narrowed down to a solid angle ⁇ or less is the left side, and in the opposite direction, that is, to the right side, the two-dimensional spatially propagated light passes through the planar optical waveguide. Propagates.
  • the three-dimensional spatially propagated light incident from a plurality of directions within the range of the solid angle 2 ⁇ is narrowed down to the solid angle ⁇ or less, and then incident on the planar optical waveguide for narrowing down.
  • the spatial inversion symmetry The left and right are asymmetric. That is, the planar optical waveguide itself is characterized by having an asymmetric waveguide structure as a whole, although it has the same thickness and has spatial inversion symmetry throughout.
  • This optical waveguide device is preferably configured such that three-dimensional spatially propagated light is narrowed to a solid angle ⁇ or less by a light control structure that controls light and then incident on the planar optical waveguide.
  • the light control structure is arranged with geometric symmetry on the main surface of the planar optical waveguide.
  • This geometric symmetry is, for example, translational symmetry in a direction perpendicular to the direction in which light travels inside the planar optical waveguide (the planar optical waveguide is approximate because it has no infinite extent). In this essence, it means translational symmetry), and the translational symmetry reduces the solid angle of 2 degrees of freedom to the incident angle of 1 degree of freedom and performs the above-described narrowing.
  • this geometrical symmetry is a rotational symmetry defined by the main surface of the planar optical waveguide (again, the planar optical waveguide is approximate because it does not have an infinite extent, but from 0 to This means that it is rotationally symmetric with respect to an azimuth angle of about ⁇ / 2), and by this rotational symmetry, the solid angle of 2 degrees of freedom is reduced to an incident angle of 1 degree of freedom and the above-described narrowing is performed.
  • the light control structure includes, for example, a light wave traveling direction conversion layer, and is configured so that three-dimensional spatially propagated light incident from a plurality of directions within the solid angle 2 ⁇ is first incident on the light wave traveling direction conversion layer. Is done.
  • This optical waveguide device is, as one typical example, The planar optical waveguide; A layer having a transparent refractive index anisotropy on the main surface of the planar optical waveguide; Having at least one reflecting mirror on the layer having refractive index anisotropy, The reflecting mirror is configured to reflect three-dimensional spatially propagating light incident from the outside and enter the layer having the refractive index anisotropy, In the layer having the refractive index anisotropy, the main surface of the planar optical waveguide crosses the layer having the refractive index anisotropy obliquely when the three-dimensional space propagation light is reflected by the reflecting mirror.
  • this optical waveguide device is, in one preferred example, A first layer having a transparent refractive index anisotropy; A first planar optical waveguide on the first layer; A second layer having a transparent refractive index anisotropy on the first planar optical waveguide; A transparent polarization direction changing layer on the second layer; A third layer having a transparent refractive index anisotropy on the polarization direction changing layer; A second planar optical waveguide on the third layer; At least one reflecting mirror on the main surface opposite to the first planar optical waveguide of the first layer; The reflecting mirror is configured to reflect three-dimensional space propagation light incident from the outside and enter the first layer, In the first layer, the three-dimensional spatially propagated light is reflected by the reflecting mirror, obliquely traverses the first layer and passes through the main surface of the first planar optical waveguide.
  • the light entering the inside of the first planar optical waveguide crosses the first planar optical waveguide obliquely and obliquely crosses the first planar optical waveguide. Having a refractive index anisotropy so as to be totally reflected when entering the first layer again after being totally reflected on the back surface of the optical waveguide, In the second layer, the light entering the first planar optical waveguide obliquely crosses the second layer, passes through the back surface of the first planar optical waveguide, and passes through the back surface of the first planar optical waveguide.
  • the light entering the polarization direction conversion layer obliquely crosses the third layer and passes through the main surface of the second planar optical waveguide, thereby the second planar light guide. Although it is allowed to enter the inside of the waveguide, the light entering the second planar optical waveguide obliquely crosses the second planar optical waveguide and passes through the second planar optical waveguide.
  • the light is incident on the third layer again after being totally reflected on the back surface, it has a refractive index anisotropy so that it is totally reflected.
  • the polarization direction conversion layer rotates the polarization plane of light incident from one main surface of the polarization direction conversion layer and emitted from the other main surface by 90 °.
  • the three-dimensional spatially propagated light incident from the outside and reflected by the reflecting mirror passes through the first layer and enters the first planar optical waveguide.
  • the component in which the vibration direction of the electric field of the light is parallel to the incident surface is reflected, and this first planar shape It is guided inside the optical waveguide.
  • the component plane direct polarization, s-polarization in which the vibration direction of the electric field of the light is perpendicular to the incident surface is the second layer. And is incident on the polarization direction conversion layer, and the polarization direction is rotated by 90 ° by the polarization direction conversion layer to be converted into in-plane polarized light.
  • the in-plane polarized light passes through the third layer and enters the second planar optical waveguide, and is reflected at the interface between the second planar optical waveguide and the outside world, and is reflected by the second planar optical waveguide. Is guided through the inside. As a result, all of the light incident on the optical waveguide device is guided through the first planar optical waveguide and the second planar optical waveguide.
  • the planar optical waveguide may be a planar optical waveguide or a curved optical waveguide.
  • the planar shape of the planar optical waveguide is selected as necessary, but typically has a quadrangular shape, for example, a rectangular shape or a square shape.
  • an end face excluding the light emitting end face of the planar optical waveguide for example, the planar optical waveguide has a quadrangular shape, and is provided on at least one side of the pair of opposing sides.
  • a planar shape corresponding to at least one of the pair of opposite sides of the quadrangular side of the square is a planar shape corresponding to at least one of the pair of opposite sides of the quadrangular side of the square.
  • a light reflecting mechanism is provided at the end of the optical waveguide.
  • the light incident on the main surface of the planar optical waveguide is reflected when entering the light reflecting mechanism when guided in the planar optical waveguide, and the optical path is bent in the direction toward the light emitting end surface.
  • the amount of light that can be extracted from the light emitting end face is increased.
  • the light reflecting film provided on the end surface of the planar optical waveguide or the end surface of the planar optical waveguide is configured as a mirror surface.
  • the layer having refractive index anisotropy preferably has an effective refractive index (n 1 ) for light incident on the layer having the refractive index anisotropy after the three-dimensional space propagation light is reflected by the reflecting mirror. Effective refractive index for light that passes through the layer having refractive index anisotropy and enters the planar optical waveguide and is totally reflected by the back surface of the planar optical waveguide and then enters the layer having refractive index anisotropy Greater than (n 2 ).
  • the effective refractive index for the light incident on the layer having the refractive index anisotropy after the three-dimensional spatial propagation light is reflected by the reflecting mirror is selected to be approximately equal to the refractive index of the planar optical waveguide.
  • Effective refractive index with respect to light that passes through the layer having refractive index anisotropy and enters the planar optical waveguide and is totally reflected on the back surface of the planar optical waveguide and then incident on the layer having refractive index anisotropy ( n 2 ) is selected to be smaller than the refractive index of the planar optical waveguide.
  • the layers having refractive index anisotropy typically have different refractive indexes in the first direction and the second direction in the cross section.
  • the first direction and the second direction are, for example, directions orthogonal to each other.
  • the medium constituting the layer having refractive index anisotropy is not particularly limited and is selected as necessary.
  • a liquid crystal, a resin, an inorganic material, an organic-inorganic composite material, or the like is used.
  • Examples of the medium constituting the layer having refractive index anisotropy include, for example, an alignment film in which organic molecules having different refractive indexes in different directions are aligned in the same direction, an organic / inorganic dielectric, and an inorganic semiconductor It is also possible to use, for example, an alignment film in which rod-like / needle-like crystallites or disk-like crystallites are arranged in a plane in a certain direction. Also in this case, the orientation direction of the structure is set so that the dielectric constant is large with respect to incident light and the dielectric constant is small with respect to light reflected from the back surface of the planar optical waveguide. Gives refractive index anisotropy.
  • Inorganic rod-like / needle-like microcrystals can be realized by, for example, II-VI group compound semiconductors.
  • At least one reflecting film is provided, but typically a plurality of reflecting mirrors are provided.
  • the cross-sectional shape and arrangement of the reflecting mirror are such that the three-dimensional spatially propagating light incident from the outside does not directly enter the planar optical waveguide (that is, after first being incident on the reflecting mirror and reflected), and It is set so that the light reflected by the reflecting mirror does not enter the adjacent reflecting mirror and is not scattered.
  • the cross-sectional shape of the reflecting mirror preferably has a convex parabolic shape from the side on which the three-dimensional space propagation light is incident toward the layer having refractive index anisotropy.
  • the cross section of the reflecting mirror has a parabolic shape so that light incident on the reflecting mirror from a direction parallel to the two-fold symmetry axis of the parabola is reflected toward the focal point of the parabola. Accordingly, the incident angle of light incident on the layer having refractive index anisotropy can be narrowed within a certain range (realization of the situation of FIG. 1C).
  • the direction of the three-dimensional spatial propagation light incident on the optical waveguide device is constant like sunlight at a certain time in fine weather, and this three-dimensional spatial propagation light is incident on the optical waveguide device from the vertical direction, it is preferable
  • the axis of the parabola is selected substantially perpendicular to the layer having refractive index anisotropy.
  • the axis of the parabola is preferably parallel to the direction after traveling direction conversion by the light wave traveling direction conversion layer.
  • a light wave traveling direction conversion layer for example, a light wave traveling direction conversion sheet (an example is shown in FIGS. 20 and 21 described later) is used.
  • the geometric intersection of the reflecting mirror and the planar optical waveguide preferably has a linear or arcuate shape. When a plurality of reflecting mirrors are provided, the geometric intersections of these reflecting mirrors and the planar optical waveguide have a plurality of linear or concentric arc shapes.
  • a plurality of reflecting mirrors are periodically provided on a layer having refractive index anisotropy in one direction parallel to the layer having refractive index anisotropy to form a reflecting mirror array.
  • the material of the reflecting mirror may be basically any material as long as it can obtain a high reflectance with respect to light in the target wavelength band in this optical waveguide device, but is suitable.
  • a metal such as silver (Ag), a silver alloy (Ag—Pd, etc.), aluminum (Al), or the like is used.
  • a plurality of reflecting mirrors and transparent layers are alternately provided on the main surface of the planar optical waveguide on the layer having refractive index anisotropy, but the present invention is not limited to this.
  • the transparent layer is preferably made of a transparent material (such as transparent glass or transparent resin) having a refractive index substantially equal to that of the transparent material constituting the planar optical waveguide.
  • the space where the back surface of the planar optical waveguide faces is the planar optical waveguide.
  • a medium having a lower refractive index most preferably a medium having a refractive index that satisfies the condition of total reflection on the back surface.
  • This medium may be basically any medium as long as the required refractive index is smaller than that of the planar optical waveguide, and may be air in addition to various transparent solids or liquids.
  • this invention A planar optical waveguide; Having a semiconductor layer for photoelectric conversion provided at an end of the planar optical waveguide,
  • the three-dimensional spatially propagated light incident from a plurality of directions within a solid angle range of 2 ⁇ toward the main surface of the planar optical waveguide is narrowed down to a solid angle ⁇ or less before entering the planar optical waveguide.
  • Light incident on the planar optical waveguide is incident on the planar optical waveguide and propagates in the planar optical waveguide as two-dimensional spatially propagated light from the direction in which the narrowing is performed to the opposite direction.
  • the photoelectric conversion device is incident on the semiconductor layer.
  • the planar optical waveguide, the layer having refractive index anisotropy, and the reflecting mirror constitute an optical waveguide device having the same configuration as the above optical waveguide device. That is, this photoelectric conversion device has an optical waveguide device portion and a photoelectric conversion portion formed of a semiconductor layer for photoelectric conversion provided at an end portion of the planar optical waveguide.
  • this semiconductor layer has a pn junction, the pn junction surface is perpendicular or parallel to the main surface of the planar optical waveguide.
  • an anode electrode and a cathode electrode are provided on the p-type semiconductor layer and the n-type semiconductor layer, respectively.
  • the first electrode and the second electrode are respectively provided on a pair of upper and lower surfaces of the semiconductor layer facing each other.
  • One of the first electrode and the second electrode is used as an anode electrode, and the other is used as a cathode electrode.
  • the net traveling direction of the light guided through the planar optical waveguide and the semiconductor layer from the end surface of the planar optical waveguide is substantially perpendicular.
  • ⁇ is selected as, for example, ⁇ / 2 ⁇ ⁇ ⁇ ⁇ ⁇ / 2 + ⁇ .
  • ⁇ is used as the anode electrode of the first electrode and the second electrode, the ratio of the thickness of the semiconductor layer to the width (electrode width) in the direction parallel to the light traveling direction in the semiconductor layer ⁇ to semiconductor layer thickness / electrode width.
  • the planar optical waveguide and the semiconductor layer are provided integrally with each other, and, for example, their ends are joined together.
  • the light is not directly incident on the semiconductor layer when the light is incident on the photoelectric conversion device.
  • the light when light is incident on the photoelectric conversion device, the light is incident on the optical waveguide device portion, but the light is not directly incident on the surface of the semiconductor layer.
  • it is possible to prevent the temperature of the semiconductor layer from being increased due to light that is directly incident on the semiconductor layer, thereby preventing deterioration of the characteristics of the semiconductor layer, and thus dissipating as heat.
  • a decrease in the photoelectric conversion efficiency of this photoelectric conversion device can be prevented, and a high photoelectric conversion efficiency can be obtained.
  • the thickness of the planar optical waveguide may be larger or smaller than the thickness of the semiconductor layer, but if the thickness is larger than the thickness of the semiconductor layer, it is guided inside the planar optical waveguide.
  • the light guided inside the planar optical waveguide may be condensed and incident on the semiconductor layer.
  • the planar optical waveguide is provided at a portion (having the same thickness as the semiconductor layer) of the planar optical waveguide where the light guided inside the planar optical waveguide is in contact with the semiconductor layer.
  • the refractive index profile is collected asymptotically. That is, the light guided inside the planar optical waveguide is guided according to the refractive index distribution of the planar optical waveguide, so that it is focused on the portion that asymptotically contacts the semiconductor layer while being guided. .
  • the semiconductor layer is made of an inorganic semiconductor or an organic semiconductor, and is typically a pn junction consisting of a p-type semiconductor layer and an n-type semiconductor layer, and the pn junction surface is the main surface of the planar optical waveguide as described above. Parallel or perpendicular to.
  • the thickness of the semiconductor layer is appropriately selected in consideration of the function of the diffusion length of carriers in the semiconductor layer, but preferably 100 nm or more and 100 ⁇ m or less when the pn junction surface is parallel to the main surface of the planar optical waveguide. When the pn junction surface is perpendicular to the main surface of the planar optical waveguide, it is preferably 1 ⁇ m or more and 500 ⁇ m or less.
  • the semiconductor constituting the semiconductor layer may be amorphous (amorphous), polycrystalline, or single crystal.
  • inorganic semiconductors include II-VI group compound semiconductors such as CdSe, PbS, PbSe, and PbTe, III-V group compound semiconductors such as GaSb, InAs, InN, AlInN, GaInN, GaN, AlGaN, GaAsN, and GaPN, and Si and SiGe.
  • Group IV semiconductors such as Si x Ge y Sn 1-xy O, SiN x , SiO x , CIS (CuInSe), CIGS (CuInGaSe), and CuInGaSeTe can be used (see, for example, Non-Patent Documents 4 to 9). ).
  • These semiconductors are characterized in that the band gap can be controlled, for example, by controlling the composition ratio of group III elements such as In and Ga or mixing sulfur (S).
  • the semiconductor layer can also be constituted by fine particles made of these inorganic semiconductors.
  • organic solar cell materials all materials generally reported as organic solar cell materials can be used.
  • polyacenes such as pentacene, polyacetylene (preferably disubstituted polyacetylene), poly (p -Phenylene vinylene), poly (2,5-thienylene vinylene), polypyrrole, poly (3-methylthiophene), polyaniline, poly (9,9-dialkylfluorene) (PDAF), poly (9,9-dioctylfluorene- co-bithiophene) (F8T2), poly (1-hexyl-2-phenylacetylene) (PH x PA) (shows blue emission as the light emitting material), poly (diphenylacetylene) derivative (PDPA-nBu) (light emitting material) As green light emission), poly (pyridine) (PPy), poly (pyridylbi) Ren) (PPyV), cyano-substituted poly (p-phenylene vinylene) (CN
  • alkali metals Li, Na, K, Cs
  • halogens Br 2 , I 2 , CI 2
  • Lewis acids BF 3 , PF 5 , AsF 5 , SbF 5 , SO 3
  • transition metal halides FeCl 3 , MoCl 5 , WCl 5 , SnCl 4
  • TCNE TCNQ
  • dopant ions used in the tetraethylammonium ions as cations TEA +
  • tetrabutylammonium Ion TAA +
  • specific examples of the polymer electrolyte include polyanions such as sulfonate polyaniline, poly (thiophene-3-acetic acid), sulfonate polystyrene, poly (3-thiophene).
  • polycations such as alkane sulfonates include polyallylamine, poly (p-phenylene-vinylene) precursor polymer, poly (p-methylpyridinium vinylene), protonated poly (p-pyridylvinylene), and polotone (2- N-methylpyridinium acetylene) and the like can be used.
  • the organic semiconductor layer doped with a low impurity concentration is used as the semiconductor layer, the organic semiconductor layer can have a heterojunction type or bulk heterojunction type structure. In the organic semiconductor layer having the heterojunction structure, the p-type organic semiconductor film and the n-type organic semiconductor film are bonded so as to be in contact with the first electrode and the second electrode.
  • the organic semiconductor layer having a bulk heterojunction structure is composed of a mixture of p-type organic semiconductor molecules and n-type organic semiconductor molecules, and has a fine structure in which the p-type organic semiconductor and the n-type organic semiconductor are intertwined with each other.
  • an organic-inorganic hybrid semiconductor can be used in addition to an inorganic semiconductor and an organic semiconductor.
  • an organic-inorganic hybrid semiconductor for example, a perovskite-based semiconductor (for example, see Non-Patent Document 10) can be used.
  • the first electrode and the second electrode are in ohmic contact with the semiconductor layer.
  • the first electrode and the second electrode may not be in ohmic contact with the semiconductor layer.
  • the first electrode and the second electrode in addition to metals such as gold (Au), nickel (Ni), and aluminum (Al), it is particularly preferable to use Al for p-type Si and Ag for n-type Si.
  • Various transparent conductive oxides such as indium-tin oxide (ITO), zinc oxide (ZnO), and tin oxide (SnO) can be used, and chromium, titanium, molybdenum, etc. are also used.
  • ITO indium-tin oxide
  • ZnO zinc oxide
  • SnO tin oxide
  • chromium, titanium, molybdenum, etc. are also used.
  • the present invention is not limited to this.
  • the transparent electrode using the above-described transparent conductive oxide when used as an electrode of a semiconductor layer that is a photoelectric conversion layer, it has a high refractive index and a wide gap so that the number of photons entering the semiconductor layer is high. It also has the effect of leading to a waveguide characteristic and a low surface recombination rate of the generated photocarriers, resulting in high photoelectric conversion efficiency. Increasing the band gap of the semiconductor layer itself as it approaches the first electrode and the second electrode is effective in suppressing the surface recombination of minority carriers, and at the same time has an effect in confining light. It is effective twice.
  • the transparent electrode corresponds to a region having a refractive index lower than the refractive index of the semiconductor layer provided at both ends of the semiconductor layer extending in the direction perpendicular to the main surface of the planar optical waveguide.
  • the band gap of the semiconductor layer or, if the semiconductor layer is made of an organic semiconductor, the HOMO (highest occupied molecular orbital) -LUMO (lowest unoccupied molecular orbital) gap is stepwise and / or sequentially in the light traveling direction. Or make it decrease continuously.
  • the band gap Alternatively, the light enters the semiconductor having the largest HOMO-LUMO gap first, and finally enters the semiconductor having the smallest band gap.
  • the semiconductor layer includes a plurality of regions in which a band gap or a HOMO-LUMO gap gradually decreases in the light traveling direction, and the first electrode and the second electrode are formed on a pair of surfaces facing each other. Two electrodes are provided, and at least one of the first electrode and the second electrode is provided separately between the regions.
  • the semiconductor layer includes a plurality of regions in which a band gap or a HOMO-LUMO gap is gradually reduced in the light traveling direction, and the width in the light traveling direction of each region is equal to the band gap or HOMO of each region. It is greater than or equal to the reciprocal of the absorption coefficient in each region of light having energy equal to the LUMO gap.
  • the semiconductor layer is composed of a plurality of regions in which the band gap or the HOMO-LUMO gap gradually decreases in the light traveling direction
  • these regions include Si x C 1 in order in the light traveling direction.
  • -x (0 ⁇ x ⁇ 1) region consisting of a region consisting of a region made of Si and Si y Ge 1-y (0 ⁇ y ⁇ 1) or a region consisting of Si x C 1-x, made of Si
  • a region composed of a region and a microcrystal Si y Ge 1 -y or a region containing at least one semiconductor selected from the group consisting of AlGaN, GaN and IGZO (In, Ga, Zn oxide), Si x C 1 -x region, Si region and Si y Ge 1 -y region, or Si x C 1 -x region, Si region, Si y Ge 1 -y region and Ge Territory It is an area.
  • Photoelectric conversion device includes not only solar cells but also optical sensors. If necessary, a plurality of photoelectric conversion devices or solar cells may be combined to form a module or system.
  • this invention Having at least one photoelectric conversion device;
  • the photoelectric conversion device is A planar optical waveguide; Having a semiconductor layer for photoelectric conversion provided at an end of the planar optical waveguide,
  • the three-dimensional spatially propagated light incident from a plurality of directions within a solid angle range of 2 ⁇ toward the main surface of the planar optical waveguide is narrowed down to a solid angle ⁇ or less before entering the planar optical waveguide.
  • Light incident on the planar optical waveguide is incident on the planar optical waveguide and propagates in the planar optical waveguide as two-dimensional spatially propagated light from the direction in which the narrowing is performed to the opposite direction.
  • the building is a photoelectric conversion device incident on the semiconductor layer.
  • the building may basically be any building as long as it can install a photoelectric conversion device.
  • a building a condominium, a detached house
  • the installation location of the photoelectric conversion device in these buildings is not particularly limited, and is selected as necessary. Examples of installation locations are the glass windows and daylighting sections of these buildings.
  • the photoelectric conversion device is, for example, a solar cell used as a power source for these buildings and electrical products installed therein.
  • the semiconductor layer is disposed in a shaded part of the building so that the light does not directly enter the semiconductor layer when the light enters the main surface of the planar optical waveguide.
  • the planar optical waveguide includes a part having a gentle curvature, and this part is disposed, for example, under a tile, under a central ridge of a roof, on a window frame or a crosspiece.
  • this invention Having at least one photoelectric conversion device attached to the outer surface;
  • the photoelectric conversion device is A planar optical waveguide; Having a semiconductor layer for photoelectric conversion provided at an end of the planar optical waveguide,
  • the three-dimensional spatially propagated light incident from a plurality of directions within a solid angle range of 2 ⁇ toward the main surface of the planar optical waveguide is narrowed down to a solid angle ⁇ or less before entering the planar optical waveguide.
  • Light incident on the planar optical waveguide is incident on the planar optical waveguide and propagates in the planar optical waveguide as two-dimensional spatially propagated light from the direction in which the narrowing is performed to the opposite direction.
  • An electronic device that is a photoelectric conversion device incident on the semiconductor layer.
  • Electronic devices may be basically any type, including both portable and stationary types, but specific examples include mobile phones, mobile devices, robots, personal computers. , In-vehicle equipment, various home appliances.
  • the photoelectric conversion device is, for example, a solar battery used as a power source for these electronic devices.
  • this invention A planar optical waveguide; A layer having a transparent refractive index anisotropy on the main surface of the planar optical waveguide; Having at least one reflecting mirror on the layer having refractive index anisotropy, In the reflecting mirror, when light is incident on the planar optical waveguide from the end, two-dimensional spatially propagated light guided through the planar optical waveguide is incident on the layer having refractive index anisotropy. And configured to reflect the light transmitted through the layer having the refractive index anisotropy and to emit the light to the outside.
  • the layer having refractive index anisotropy is a light having refractive index anisotropy that allows transmission of the two-dimensional spatial propagation light incident on the layer having refractive index anisotropy from the inside of the planar optical waveguide. It is a wave device.
  • the main surface of the planar optical waveguide is the surface on which light is incident from the outside and a layer having a refractive index anisotropy and a reflecting mirror are provided.
  • the main surface means a surface on which two-dimensional spatially propagating light propagating inside the planar optical waveguide goes out and on which a layer having a refractive index anisotropy and a reflecting mirror are provided.
  • this invention A planar optical waveguide; A layer having a transparent refractive index anisotropy on the main surface of the planar optical waveguide; At least one reflecting mirror on the layer having refractive index anisotropy; A light source provided at an end of the planar optical waveguide, In the reflecting mirror, when light is incident on the planar optical waveguide from the end, two-dimensional spatially propagated light guided through the planar optical waveguide is incident on the layer having refractive index anisotropy. And configured to reflect the light transmitted through the layer having the refractive index anisotropy and to emit the light to the outside.
  • the layer having refractive index anisotropy is light emission having refractive index anisotropy that allows transmission of the two-dimensional spatially propagating light incident on the layer having refractive index anisotropy from the inside of the planar optical waveguide. Device.
  • the planar optical waveguide, the layer having refractive index anisotropy, and the reflecting mirror constitute an optical waveguide device having the same configuration as the above optical waveguide device. That is, this light emitting device has an optical waveguide device portion and a light source provided at an end portion of the planar optical waveguide.
  • the light source provided at the end of the planar optical waveguide may be basically any light source.
  • a semiconductor light emitting element such as a light emitting diode or a semiconductor laser is used. Since this light emitting device can emit light, it can be used as a planar light source, a lighting device, a backlight of a liquid crystal display, and the like.
  • the three-dimensional spatial propagation light incident from a plurality of directions within the range of the solid angle 2 ⁇ toward the main surface of the planar optical waveguide is narrowed down to the solid angle ⁇ or less and then applied to the planar optical waveguide.
  • the light incident on the planar optical waveguide from the direction in which the aperture is narrowed down to the opposite direction propagates as two-dimensional spatially propagated light in the planar optical waveguide.
  • Light can be converted into two-dimensional spatially propagated light. This conversion can be performed regardless of the wavelength of the three-dimensional spatial propagation light. That is, redirection in the traveling direction can be easily performed correspondingly to light in a wide wavelength band.
  • a photoelectric conversion device having an optical waveguide device having the same configuration as this optical waveguide device two-dimensional spatial propagation light in a wide wavelength band emitted from the end face of the planar optical waveguide of this optical waveguide device portion. Can be made incident on the semiconductor layer, so that extremely high photoelectric conversion efficiency can be obtained.
  • another optical waveguide device light is incident from the end face of the planar optical waveguide, and the two-dimensional spatially propagated light guided through the planar optical waveguide is converted into a three-dimensional spatially propagated light regardless of the wavelength. Can be converted.
  • redirection in the traveling direction can be easily performed correspondingly to light in a wide wavelength band. For this reason, it is possible to efficiently convert two-dimensional spatial propagation light in a wide wavelength band into three-dimensional spatial propagation light.
  • a light emitting device having an optical waveguide device portion having the same configuration as this optical waveguide device light in a wide wavelength band is incident from the light source to the end surface of the planar optical waveguide of the optical waveguide device portion. Since the two-dimensional spatially propagated light guided inside the optical waveguide can be efficiently converted into the three-dimensional spatially propagated light regardless of the wavelength and emitted to the outside, high emission intensity can be obtained.
  • the net traveling direction of the light guided in the planar optical waveguide and the carrier generated in the semiconductor layer by the light incident on the semiconductor layer from the end surface of the planar optical waveguide. Maximizing the amount of light absorption and minimizing the distance between the electrodes by selecting the thickness of the photoelectric conversion layer in the light incident direction by making the angle ⁇ made with the net moving direction almost perpendicular Can do. For this reason, extremely high photoelectric conversion efficiency can be obtained. Further, since the incident light can be received by the entire main surface of the planar optical waveguide, there is no insensitive region for the incident light.
  • the planar optical waveguide since light incident on the main surface of the planar optical waveguide is guided through the planar optical waveguide and incident on the semiconductor layer, it is possible to prevent light from directly entering the semiconductor layer. For this reason, even when the semiconductor layer is made of, for example, amorphous silicon or an organic semiconductor, the deterioration of the organic semiconductor due to the Stebbler-Lonsky effect or an ultraviolet component can be suppressed. Further, it is very easy to increase the area of the photoelectric conversion device by increasing the area of the planar optical waveguide. Further, when the band gap of the semiconductor layer or the semiconductor layer is made of an organic semiconductor, the HOMO-LUMO gap is decreased stepwise and / or continuously in the light incident direction, so that the main part of the solar spectrum can be obtained. Alternatively, photoelectric conversion can be performed by absorbing light of all wavelengths, and ultimately, photoelectric conversion efficiency approaching the theoretical maximum efficiency can be obtained.
  • FIG. 1 is a cross-sectional view showing an optical waveguide device according to a first embodiment of the present invention. It is sectional drawing which shows the form by which the board
  • the performance of converting externally incident three-dimensional spatial propagation light into two-dimensional spatial propagation light is verified by setting the wavelength of the three-dimensional spatial propagation light to 530 nm. It is a basic diagram which shows the result of the simulation performed to.
  • the performance of converting externally incident three-dimensional spatially propagated light into two-dimensional spatially propagated light is set by setting the wavelength of the three-dimensional spatially propagated light to 650 nm. It is an approximate line figure showing the result of.
  • the performance of converting externally incident three-dimensional spatially propagated light into two-dimensional spatially propagated light is verified by setting the wavelength of the three-dimensional spatially propagated light to 800 nm. It is a basic diagram which shows the result of the simulation performed to.
  • the performance of converting externally incident three-dimensional spatially propagated light into two-dimensional spatially propagated light is verified by setting the wavelength of the three-dimensional spatially propagated light to 1200 nm. It is a basic diagram which shows the result of the simulation performed to.
  • the performance of converting externally incident three-dimensional spatial propagation light into two-dimensional spatial propagation light is verified by setting the wavelength of the three-dimensional spatial propagation light to 1600 nm.
  • FIG. 5 is a schematic diagram showing the relationship between the wavelength of three-dimensional space propagation light incident from the outside and the reflectance and light propagation rate of the reflecting mirror 31 in the optical waveguide device according to the first embodiment of the present invention.
  • FIG. 40A It is a front view which shows the other example which installed the illumination system by the 8th Embodiment of this invention in the outer wall of the building. It is sectional drawing which shows the optical waveguide device by 9th Embodiment of this invention. It is sectional drawing which expands and shows a part of optical waveguide device by a 9th embodiment of this invention. It is a basic diagram which shows the simulation result of the optical field in the structure shown to FIG. 40A. It is a basic diagram which shows the simulation result of the optical field in the structure shown to FIG. 40A.
  • Results of simulation performed to verify the ability to rotate the polarization direction of three-dimensional spatially propagated light with a wavelength of 500 nm incident from the outside by a polarization direction conversion layer in the optical waveguide device according to the ninth embodiment of the present invention FIG. Results of simulation performed to verify the ability to rotate the polarization direction of three-dimensional spatially propagated light with a wavelength of 410 nm incident from the outside by 90 ° with the polarization direction conversion layer in the optical waveguide device according to the ninth embodiment of the present invention FIG.
  • FIG. It is sectional drawing which shows the photoelectric conversion apparatus by 10th Embodiment of this invention.
  • FIG. 2 shows an optical waveguide device according to the first embodiment.
  • this optical waveguide device includes a planar optical waveguide 10 and a transparent refractive index anisotropy layer (hereinafter referred to as “refractive index”) provided on the main surface of the planar optical waveguide 10. 20) and a reflector array 30 provided on the refractive index anisotropic medium layer 20.
  • refractive index a transparent refractive index anisotropy layer
  • the space facing the back surface of the planar optical waveguide 10 is made of a medium having a refractive index lower than that of the planar optical waveguide 10 and may be an air layer.
  • the substrate 40 may be provided so as to be in contact with the main surface opposite to the refractive index anisotropic medium layer 20 and to perform the role of mechanical support or mechanical protection of the optical waveguide device.
  • the substrate 40 preferably has a sufficiently lower refractive index than the planar optical waveguide 10 so that it can serve as a cladding layer for efficiently confining light inside the planar optical waveguide 10. Formed by material.
  • the substrate 40 may have a multilayer structure of two or more layers.
  • the refractive index of the layer in contact with the planar optical waveguide 10 in the substrate 40 must satisfy the above conditions and have a necessary thickness (typically 0.1 ⁇ m to several ⁇ m).
  • the physical property values of the remaining layers can be freely selected as long as the above condition is satisfied (for example, a substance having light absorption is allowed).
  • the material constituting the planar optical waveguide 10 is for light having a wavelength in the target range of the optical waveguide device, for example, light in the main wavelength band of the solar spectrum (ultraviolet light, visible light, infrared light). It is desirable that the material be as transparent as possible.
  • the material constituting the planar optical waveguide 10 is generally transparent glass, high refractive index glass, transparent plastic or the like.
  • the transparent plastic examples include polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polystyrene, polyethylene, polypropylene, polyphenylene sulfide, polyvinylidene fluoride, acetyl cellulose, brominated phenoxy, aramids, polyimides, polystyrenes, polyarylates, Examples include polysulfones and polyolefins.
  • a fluorine-based material used for plastic optical fiber (POF) or the like is particularly suitable due to its low light loss.
  • the thickness of the planar optical waveguide 10 is selected as necessary, and is, for example, 1 to 1000 ⁇ m.
  • the size (longitudinal and lateral length) of the planar optical waveguide 10 is appropriately selected according to the location where the optical waveguide device is installed. In general, for example, (1 cm to 1 m) ⁇ (1 cm to 1 m). is there.
  • planar shape of the planar optical waveguide 10 is not particularly limited and is appropriately selected depending on the use of the optical waveguide device, and is, for example, rectangular or square.
  • FIG. 4 shows a case where the planar shape of the planar optical waveguide 10 is a rectangle having the above size as an example.
  • the reflecting mirror array 30 has a structure in which reflecting mirrors 31 and transparent layers 32 are alternately and repeatedly provided in one direction parallel to the refractive index anisotropic medium layer 20.
  • the reflecting mirror 31 and the transparent layer 32 are made of, for example, the materials already mentioned.
  • the thickness of the transparent layer 32 in one direction parallel to the refractive index anisotropic medium layer 20 is selected as necessary, and is, for example, several ⁇ m to several tens ⁇ m. Further, the repetition period of the reflecting mirror 31 and the transparent layer 32, that is, the total thickness of one reflecting mirror 31 and the transparent layer 32 adjacent thereto in one direction parallel to the refractive index anisotropic medium layer 20.
  • the ratio of the thickness of the reflecting mirror 31 to the thickness is desirably small, and is selected to be at least 5% or less, preferably 1% or less and 1 nm or more.
  • the reflecting mirror 31 is typically provided periodically, and the interval between the reflecting mirrors 31 may be changed regularly or irregularly in a part or all of the reflecting mirror array 30.
  • the structure and arrangement are set so that the light reflected by the reflecting mirror 31 is not reflected (scattered) by the back surface of the right reflecting mirror 31.
  • the interval between the reflecting mirrors 31 and the number of repetitions between the reflecting mirror 31 and the transparent layer 32 are appropriately selected according to the use of the optical waveguide device.
  • the reflecting mirror 31 is configured to reflect the three-dimensional spatial propagation light incident from the outside of the optical waveguide device and to enter the refractive index anisotropic medium layer 20.
  • the reflecting mirror 31 reflects the three-dimensional spatial propagation light incident on the optical waveguide device from a certain direction so as to be incident on the refractive index anisotropic medium layer 20 at an incident angle within a certain range.
  • a cross-sectional shape is selected. In FIG.
  • the case where the shape of the reflecting mirror 31 in the cross section perpendicular to the main surface of the planar optical waveguide 10 of the reflecting mirror array 30 forms a part of one side of the parabolic axis is shown.
  • the axis of this parabola is Is preferably set within ⁇ 10 ° with respect to the normal line standing on the main surface of the planar optical waveguide 10, and most preferably set near 0 °, that is, perpendicular to the main surface of the planar optical waveguide 10. Is done.
  • each reflecting mirror 31 is preferably provided so as to extend from end to end of the planar optical waveguide 10.
  • the planar shape of each reflecting mirror 31 is not particularly limited and is selected as necessary.
  • the reflecting mirror 31 is reflected by the reflecting mirror 31, passes through the refractive index anisotropic medium layer 20, and is planar optical waveguide 10. Is selected so that at least most of the two-dimensional spatially propagating light that is incident on the inside of the light is guided in a certain direction.
  • Specific examples of the reflector array 30 are shown in FIGS. As shown in FIGS. 5 and 6, it should be noted that the geometric intersection (set) of the planar optical waveguide 10 and the reflecting mirror 31 has geometric symmetry.
  • FIG. 5 shows a case where each of the reflecting mirrors 31 has a shape extending linearly in the direction of the short side of the reflecting mirror array 30 when the planar optical waveguide 10 and the reflecting mirror array 30 have a rectangular planar shape. Has translational symmetry.
  • each reflecting mirror 31 is guided in the direction perpendicular to each reflecting mirror 31 inside the planar optical waveguide 10.
  • FIG. 6 shows that when the planar optical waveguide 10 and the reflecting mirror array 30 have a rectangular planar shape, each reflecting mirror 31 is curved in a concentric arc shape centering on the midpoint of one short side of the reflecting mirror array 30. It has a shape and has partial rotational symmetry and azimuth symmetry. In this case, the light reflected by each reflecting mirror 31 is guided inside the planar optical waveguide 10 toward the midpoint of one short side of the reflecting mirror array 30.
  • the refractive index anisotropic medium layer 20 is configured such that the incident light (three-dimensional spatial propagation light) from the outside is reflected by the reflecting mirror 31 of the reflecting mirror array 30 and the refractive index anisotropic medium layer 20.
  • the refractive index in the direction toward A (A direction) and the refractive index in the direction perpendicular to this direction (B direction) are different from each other, and the refractive index in the A direction is larger than the refractive index in the B direction.
  • the refractive index in the A direction is substantially equal to the refractive indexes of the planar optical waveguide 10 and the transparent layer 32, so that the light reflected by the reflecting mirror 31 passes from the refractive index anisotropic medium layer 20 to the planar optical waveguide 10. Is allowed to enter the inside of the planar optical waveguide 10.
  • the direction in which the light reflected by the back surface of the planar optical waveguide 10 travels is substantially the B direction.
  • the refractive index in the direction is sufficiently smaller than the refractive index of the planar optical waveguide 10, and therefore, the main surface of the planar optical waveguide 10 is reflected on the back surface of the planar optical waveguide 10 when the total reflection condition is satisfied.
  • the medium having the refractive index anisotropy constituting the refractive index anisotropic medium layer 20 is not particularly limited. For example, it is most typically made of liquid crystal.
  • liquid crystal molecules are approximated to a uniaxial dielectric ellipsoid, and the dielectric constant in the major axis direction is denoted as ⁇ //, and the dielectric constant in the minor axis direction is denoted as ⁇ .
  • ⁇ // ⁇ ⁇ > 0 as an example.
  • n // the refractive index in the major axis direction of liquid crystal molecules
  • n ⁇ the refractive index in the minor axis direction
  • n //> n ⁇ holds.
  • the alignment direction of the liquid crystal molecules is such that the light incident on the planar optical waveguide 10 feels a relatively large refractive index.
  • the liquid crystal can be used by controlling.
  • the layer not in contact with the planar optical waveguide 10 may be basically any layer, but the layer in contact with the planar optical waveguide 10 is It must be transparent to at least most of the sunlight wavelengths and have a refractive index smaller than that of the planar optical waveguide 10.
  • the transparent layer is, for example, a glass plate or a transparent plastic plate.
  • Examples of the transparent plastic constituting the transparent plastic plate include polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polystyrene, polyethylene, polypropylene, polyphenylene sulfide, polyvinylidene fluoride, acetyl cellulose, brominated phenoxy, aramids, polyimides, and polystyrene. , Polyarylates, polysulfones, polyolefins and the like can be used.
  • This optical waveguide device can be manufactured using a conventionally known technique. That is, for example, the planar optical waveguide 10 is prepared, and the refractive index anisotropic medium layer 20 is formed on the main surface. Next, the reflecting mirror array 30 is formed on the refractive index anisotropic medium layer 20. For example, a pre-formed reflector array 30 is pasted on the refractive index anisotropic medium layer 20. Thus, the optical waveguide device shown in FIG. 2 is manufactured. When the substrate 40 is used, the substrate 40 is prepared, the planar optical waveguide 10 is formed on one main surface thereof, and the refractive index anisotropic medium layer 20 and the reflector array 30 are sequentially formed thereon. . Thus, the optical waveguide device shown in FIG. 3 is manufactured.
  • the reflector array 30 can be easily manufactured by the following method, for example. That is, first, as shown in FIG. 5, the case where the reflecting mirror 31 is manufactured in which the reflecting mirror 31 extends straight in a straight line will be described.
  • 8A and 8B are a front view and a side view of the vacuum chamber 50 of the vacuum evaporation apparatus, and FIG. 8C is an enlarged view of a portion surrounded by a broken line in FIG. 8B.
  • a flat tape-like base film 52 made of, for example, a flat tape with a narrow width is wound around a flat roller 51 having a square cross section with rounded corners.
  • the base film 52 with the metal film 55 is taken up by a take-up roller 56.
  • the winding surface of the winding roller 56 has the same cross-sectional shape as the reflecting mirror 31 of the reflecting mirror array 30, for example, a parabolic shape.
  • the cross-sectional shape of the outer peripheral surface of the roller 51 may be the same as the cross-sectional shape of the take-up surface of the take-up roller 56.
  • the base film 52 with the metal film 55 is taken up by the take-up roller 56, thereby forming a spiral structure in which the base film 52 and the metal film 55 are alternately laminated.
  • the reflector array 30 can be manufactured by cutting out from this spiral structure as shown by the broken line in FIG. 8A.
  • the metal film 55 corresponds to the reflecting mirror 31
  • the base film 52 corresponds to the transparent layer 32.
  • the reflector array 30 similar to the above can be manufactured by using an imprinting technique. That is, first, a flat film having the same properties as the base film 52 is prepared, and a curved surface portion having the same shape as the shape of the reflecting mirror 31 in the cross section of the reflecting mirror array 30 and a vertical line connected to the flat film are prepared. After pressing a die having a serrated cross section with a straight portion, the die is pulled away from the flat membrane. The pressing depth of the mold is set to be smaller than the thickness of the flat film so as not to penetrate the flat film when the mold is pressed. Next, for example, a metal such as Ag is deposited on the surface embossed from the direction perpendicular to the flat film by, for example, a vacuum deposition method.
  • Metal is not deposited on a portion of the embossed surface perpendicular to the flat film, and metal is deposited only on the curved surface portion to form a metal film. Thereafter, both surfaces of the flat film are polished so that the metal film is exposed on both surfaces.
  • This metal film corresponds to the reflecting mirror 31, and the flat film corresponds to the transparent layer 32.
  • FIGS. 9A and 9B are a front view and a side view of the vacuum chamber 50 of the vacuum evaporation apparatus
  • FIG. 9C is an enlarged view of a portion surrounded by a broken line in FIG. 9B.
  • a cylindrical tape 51 is wound with, for example, a thin and thin flat tape-like base film 52 made of transparent resin, and vapor deposition is performed on one surface of the base film 52.
  • the metal 54 of the source 53 is evaporated to form a thin metal film 55
  • the base film 52 with the metal film 55 is taken up by a take-up roller 56.
  • the base film 52 with the metal film 55 is taken up by the take-up roller 56, thereby forming a spiral structure in which the base film 52 and the metal film 55 are alternately laminated.
  • the reflector array 30 can be manufactured by cutting out from this spiral structure as shown by the broken line in FIG. 9A.
  • optical waveguide device The operation of the optical waveguide device will be described. As shown in FIG. 10, consider a case where incident light is incident on the reflector array 30 of the optical waveguide device from the outside in a substantially vertical direction. The incident light is reflected by the reflecting mirrors 31 of the reflecting mirror array 30 and then passes through the refractive index anisotropic medium layer 20 and enters the planar optical waveguide 10. The light that enters the planar optical waveguide 10 is repeatedly totally reflected at the interface between the planar optical waveguide 10 and the refractive index anisotropic medium layer 20 and at the interface between the planar optical waveguide 10 and the air layer or the substrate 40.
  • the inside of the planar optical waveguide 10 is guided in the direction of the arrow and emitted from the end surface of the planar optical waveguide 10.
  • the planar optical waveguide 10 and the reflector array 30 are rectangular as shown in FIG. 5, the light is emitted from the end surface of the short side on the right side of the planar optical waveguide 10 to the outside.
  • FIG. 11 shows a view of the optical waveguide device at this time viewed from the reflecting mirror array 30 side.
  • FIG. 12 shows the result of a computer wave simulation of a light wave tracking experiment performed assuming a four-layer structure of the substrate 40, the planar optical waveguide 10, the refractive index anisotropic medium layer 20, and the reflector array 30.
  • the thickness direction of the substrate 40, the planar optical waveguide 10, the refractive index anisotropic medium layer 20, and the reflector array 30 is the z axis
  • the substrate 40, the planar optical waveguide 10, the refractive index anisotropic medium layer The direction parallel to 20 and the mirror array 30 was taken as the x axis, and the direction perpendicular to these x and z axes was taken as the y axis.
  • FIG. 12 shows the distribution in the xz plane of the magnitude (intensity) of the amplitude E y of the electric field of the light wave in the y-axis direction (how to take this xyz three-dimensional coordinate system is assumed in the discussion of FIG. 1C).
  • the simulation conditions are as follows.
  • FIG. 13A, FIG. 13B, FIG. 13C, FIG. 14A, FIG. 14B, and FIG. 14C show the planar optical waveguide 10 and the anisotropic refractive index by changing the wavelength of incident light to 400 nm, 530 nm, 650 nm, 800 nm, 1200 nm, and 1600 nm, respectively.
  • required the mode of the light which propagates the property medium layer 20 and the reflector array 30 by simulation is shown.
  • FIG. 15 shows the reflectivity and light propagation rate of the parabolic reflector 31 as a function of wavelength based on the results shown in FIGS. 13A, 13B, 13C, 14A, 14B, and 14C (to the optical waveguide device). It is the figure which plotted the ratio of the light quantity guided in the planar optical waveguide 10 with respect to the incident light quantity. As can be seen from FIG.
  • the reflectance of the parabolic reflector 31 is about 92 to 98% with respect to light in the wavelength range of 400 to 1600 nm, and the light propagation rate is as high as about 80% regardless of the wavelength. From this, it can be seen that high reflectance and light propagation rate are obtained regardless of the wavelength. This means that light having almost the entire wavelength of the sunlight spectrum can be taken into the planar optical waveguide 10 and guided.
  • the reflecting mirror 31 can obtain the same reflectance regardless of the polarization direction of the incident light with respect to the optical waveguide device.
  • the three-dimensional space propagation light incident on the optical waveguide device is reflected by the reflecting mirror 31 of the reflecting mirror array 30 and is incident on the planar optical waveguide 10.
  • the wavelength of the incident three-dimensional spatially propagated light light can be efficiently introduced into the planar optical waveguide 10 and converted into two-dimensional spatially propagated light. For this reason, it is possible to efficiently convert three-dimensional spatial propagation light in a wide wavelength band into two-dimensional spatial propagation light.
  • FIG. 17 shows an optical waveguide device according to the second embodiment. As shown in FIG. 17, this optical waveguide device is the same as the optical waveguide device according to the first embodiment except that the light wave traveling direction conversion layer 60 is provided on the reflector array 30. It has a configuration.
  • the light wave traveling direction conversion layer 60 has a direction perpendicular to the surface of the light wave traveling direction conversion layer 60 regardless of the incident angle of the incident light incident on the light wave traveling direction conversion layer 60. Can be converted into light. For this reason, even if incident light enters the optical waveguide device from various directions, the traveling direction is converted into a direction perpendicular to the reflector array 30 by the light wave traveling direction conversion layer 60, and as a result, from a certain direction. Light can enter the inside of the planar optical waveguide 10.
  • the refractive index of the transparent resin was 1.52.
  • Light (plane wave) having a wavelength of 1.0 ⁇ m was incident on the slab waveguide with a one-dimensional structure at an incident angle ⁇ 0 ( ⁇ 30 °).
  • the thickness direction of the one-dimensional structured slab waveguide is the z-axis
  • the incident light with respect to the one-dimensional structured slab waveguide is the x-axis
  • the direction perpendicular to the x-axis and z-axis is the y-axis.
  • FIG. 18 shows the distribution in the xz plane of the magnitude (intensity) of the amplitude E y of the electric field of the light wave in the y-axis direction.
  • light incident on the slab waveguide with a one-dimensional structure at an incident angle ⁇ 0 is incident from a direction substantially perpendicular to the slab waveguide after passing through the one-dimensional structure. . That is, it can be seen that this L & S structure can convert the traveling direction of obliquely incident light in a direction substantially perpendicular to the surface of the light wave traveling direction conversion layer 60.
  • FIG. 19 shows the result of obtaining the change in the refraction angle (effective refraction angle) with respect to the incident angle ⁇ 0 by simulation while changing the width w and height h of the structure of the parabolic section constituting the one-dimensional structure.
  • FIG. 19 also shows the same result when a simple slab waveguide without a one-dimensional structure is used. From FIG. 19, it can be seen that near the normal incidence is obtained through the L & S structure composed of the structure having a parabolic cross section as compared with the case where a simple slab waveguide is used.
  • the cross-sectional shape is a parabola, and this is a structure having rotational symmetry around the axis, that is, a film (paraboloid aggregate film) composed of an assembly of rotational paraboloids (paraboloids) may be used for the light wave traveling direction conversion layer 60. It is valid.
  • Each figure of FIG. 21 corresponds to the state of light incidence shown in each figure of FIG. 20, and shows the state of light intensity viewed from the back side of the screen. From FIG.
  • the second embodiment in addition to the same advantages as those of the first embodiment, it is set so that sunlight is incident substantially vertically regardless of the incident angle of light with respect to the optical waveguide device.
  • incident light can be efficiently introduced into the planar optical waveguide 10 through the reflector array 30 by the light wave traveling direction conversion layer 60, and the amount of light guided through the planar optical waveguide 10 is greatly increased.
  • the advantage that the increase can be achieved can be obtained. Even when the deviation ⁇ from vertical incidence is not zero (in this case as well, ⁇ is suppressed to about 8 ° as can be seen from FIG. 19), the incident light is lost (the incident light is reflected by the reflecting mirror 31). 17, when attention is paid to two reflecting mirrors 31 adjacent to each other in FIG.
  • the right end of the reflecting mirror 31 on the left side is In the projection component to the planar optical waveguide 10 at the left end (the part where the reflecting mirror 31 is in contact with the light wave traveling direction conversion layer 60) of the reflecting mirror 31 on the right side of the portion contacting the planar optical waveguide 10 (in the x-axis direction)
  • it is also effective to overlap by (the height of the reflecting mirror 31) ⁇ tan ⁇ .
  • the right end of the right reflecting mirror 31 is escaped to the right as much as possible ( Shift).
  • FIG. 22A As another method for increasing the tolerance against the deviation in orientation from the case of normal incidence (270 ° incidence) shown in FIG. 22A having the highest waveguide rate (deviation from ideal perpendicular incidence as ⁇ ), in particular, FIG.
  • the light reflected by the left reflecting mirror 31 is likely to be reflected (scattered) by the back surface of the right reflecting mirror 31 (the waveguide rate at the time of vertical incidence is 100).
  • the decrease in the waveguide can be suppressed to a slight value by the above-described refractive index setting (where% is guided by 12%).
  • the light wave traveling direction conversion layer 60 is a small angle that takes a value between 0 and ⁇ in advance with respect to the other portions (periodic array reflector 31 + refractive index anisotropic medium layer 20 + planar optical waveguide 10). It can be seen that it is effective to place (paste) the film at a tilt angle (that is, so that light is incident from an angle direction between 270 ° and 270 ° ⁇ ).
  • the light wave traveling direction conversion layer 60 can be attached as it is to the other part (the periodic array reflecting mirror 31 + the refractive index anisotropic medium layer 20 + the planar optical waveguide 10) as it is.
  • ⁇ 8 ° as an effective example based on FIGS. 19, 20, and 21.
  • FIG. 23 shows a photoelectric conversion device according to the third embodiment. As shown in FIG. 23, this photoelectric conversion device uses the optical waveguide device according to the first embodiment, particularly the optical waveguide device shown in FIG.
  • this photoelectric conversion device has an optical waveguide device portion and a photoelectric conversion portion.
  • the optical waveguide device portion has the same structure as the optical waveguide device shown in FIG.
  • a semiconductor layer 70 for photoelectric conversion is provided on the substrate 40 extending outside the planar optical waveguide 10 so as to contact the end surface of the planar optical waveguide 10.
  • the semiconductor layer 70 has a pn junction, and the pn junction surface is parallel to the main surface of the planar optical waveguide 10.
  • the semiconductor layer 70 generally has an elongated rectangular planar shape (corresponding to the case shown in FIG. 5), but is not limited thereto, and may be a short rectangular shape in the case shown in FIG. The latter case is effective because it can lead to saving of the material of the semiconductor layer 70 and an increase in the light collection ratio.
  • the planar optical waveguide 10 and the semiconductor layer 70 are provided integrally with each other and have a planar shape as a whole.
  • the first electrode 80 and the second electrode 90 are provided on a pair of surfaces (upper surface and lower surface) facing each other above and below the semiconductor layer 70 (with the light incident side facing up), respectively.
  • One of the first electrode 80 and the second electrode 90 is used as an anode electrode, and the other as a cathode electrode.
  • the first electrode 80 is used as an anode electrode
  • the second electrode 90 is used as a cathode electrode.
  • the semiconductor layer 70 is divided into a plurality of regions made of different semiconductors
  • the first electrode 80 and the second electrode 90 may be provided for each region, or one may be provided on all regions. It may be a full-surface electrode extending to the surface.
  • incident light three-dimensional spatial propagation light
  • incident light incident on the reflecting mirror array 30 of the optical waveguide device part enters the planar optical waveguide 10 and is converted into two-dimensional spatial propagation light.
  • the light After being waved, the light is emitted from the end face of the planar optical waveguide 10 and is incident on the semiconductor layer 70.
  • the semiconductor layer 70 is caused by the net traveling direction of the light guided through the planar optical waveguide 10 and the light incident on the semiconductor layer 70 from the end surface of the planar optical waveguide 10.
  • the angle ⁇ formed by the net moving direction of the carriers (photocarriers) generated therein is substantially a right angle.
  • the angle ⁇ is divided into a plurality of regions in which the width of the light travel direction of the first electrode 80 or the semiconductor layer 70 is made of different semiconductors, and the first electrode 80 is provided for each region. If the width of the first electrode 80 provided in each region in the light traveling direction is W ′ and the thickness of the semiconductor layer 70 is d, then ⁇ / 2 ⁇ ⁇ ⁇ ⁇ ⁇ / 2 + ⁇ (provided that , ⁇ ⁇ d / W ′), typically 80 ° ⁇ ⁇ ⁇ 100 °, and most preferably 90 °.
  • An antireflection film is preferably provided on the joint surface between the planar optical waveguide 10 and the semiconductor layer 70 in order to prevent reflection of light incident on the semiconductor layer 70 from the planar optical waveguide 10.
  • This photoelectric conversion device is preferably configured so that light does not directly enter the semiconductor layer 70 when light is incident from the outside.
  • the photoelectric conversion device when light is incident on the photoelectric conversion device, the light is incident on the reflector array 30 of the optical waveguide device portion, but the light is not directly incident on the surface of the semiconductor layer 70.
  • a light shielding layer is provided above the semiconductor layer 70 so as to cover the first electrode 80.
  • a conventionally well-known thing can be used for a light shielding layer, and it selects as needed, For example, it is the aluminum laminated film etc. in which the plastic film was formed on both surfaces of the aluminum foil. This light shielding layer can prevent light from directly entering the semiconductor layer 70.
  • substrate 40 comprises a part of outer surface of a building or an electronic device
  • sunlight injects into an optical waveguide apparatus part in other words, so that sunlight may not enter into the semiconductor layer 70, in other words.
  • the semiconductor layer 70 is covered with a member or the like so as to be shaded.
  • the window glass becomes the substrate 40
  • the planar optical waveguide 10 is provided on the window glass exposed to the outside
  • the semiconductor layer 70 is made of, for example, Al. Hide inside the window frame.
  • this photoelectric conversion device When this photoelectric conversion device is laid on the roof of a building, the ends of adjacent photoelectric conversion devices are overlapped vertically, and the lower photoelectric conversion device is formed by the semiconductor layer 70 at the end of the upper photoelectric conversion device.
  • the semiconductor layer 70 at the end of each is covered.
  • the photoelectric conversion device When the photoelectric conversion device is installed in the display unit of an electronic device, for example, a smartphone, the transparent member on the surface of the display unit becomes the substrate 40, and the planar optical waveguide 10 is provided on the transparent member exposed to the outside.
  • the semiconductor layer 70 is hidden behind a member provided on the surface of the display unit.
  • the semiconductor layer 70 is selected, for example, from those already listed as necessary.
  • the semiconductor layer 70 is typically a pn junction composed of a p-type semiconductor layer and an n-type semiconductor layer.
  • a portion of the semiconductor layer 70 in contact with the first electrode 80 and the second electrode 90 is doped with a high impurity concentration, and the first electrode 80 and the second electrode 90 are connected to the semiconductor layer 70. And make ohmic contact.
  • the length of one side of the semiconductor layer 70 is typically selected to be the same as the length of the side of the planar optical waveguide 10 on which the semiconductor layer 70 is provided, but the length of the side perpendicular to this side is typically The thickness is 0.5 ⁇ m to 5 mm, preferably 2 ⁇ m to 1 mm.
  • the thickness of the semiconductor layer 70 is generally as small as several tens of ⁇ m or less, the volume of the semiconductor layer 70 is also extremely small. That is, the amount of semiconductor layer 70 used can be extremely small. For this reason, the manufacturing cost of the photoelectric conversion device can be reduced.
  • the end portion of the planar optical waveguide 10 is bent (bended), for example, by 90 ° downward with a finite radius of curvature so that light travels in the semiconductor layer 70 in the vertical direction in FIG. be able to. As a result, as described above, it is possible to minimize the light shielding loss that occurs when the light shielding layer is provided above the semiconductor layer 70 so as to cover the first electrode 80.
  • the band gap or HOMO-LUMO gap E g of the semiconductor layer 70 decreases stepwise in N stages (N ⁇ 2) in the light traveling direction in the semiconductor layer 70, and E g1 , E g2 ,. (E g1 > E g2 >...> E gN ).
  • the semiconductor layer 70 includes regions 71, 72, 73, and 74 having band gaps or HOMO-LUMO gaps E g of E g1 , E g2 , E g3 , and E g4 , respectively.
  • Each region 71, 72, 73, 74 has an elongated stripe shape extending in a direction parallel to the side where the semiconductor layer 70 of the planar optical waveguide 10 is provided.
  • first electrodes 81, 82, 83, 84 are provided on the regions 71, 72, 73, 74 separately from each other.
  • the second electrode 90 is a full-surface electrode, and is a common electrode for each region 71, 72, 73, 74. (The width in the traveling direction of light, the length of the lateral direction in FIG.
  • each E gi region constituting the semiconductor layer 70, the photoelectric conversion target photons (bandgap E of the E gi region of the E gi region If the absorption coefficient of this E gi region with respect to the one having the lowest energy among the photons having the energy of gi or higher) is ⁇ i , it is 1 / ⁇ i or higher.
  • E gi can be set as follows.
  • the wavelength is divided into N sections in the entire wavelength range of the AM1.5 sunlight spectrum or its main wavelength range (including a portion with a high incident energy). These sections are numbered in order from the short wavelength side (high energy side) 1, 2,..., N, and E gi is selected to be equal to the minimum photon energy in the i-th section. In this way, when a photon having photon energy in the kth section is incident on the E gi region, an electron-hole pair is generated and photoelectric conversion is performed.
  • the photon having the photon energy of the k-th section reaches each Egi region and is sufficiently absorbed, so that the Egi is introduced from the junction surface between the planar optical waveguide 10 and the semiconductor layer 70. Choose the distance to the area.
  • sunlight that is guided through the planar optical waveguide 10 and incident on the semiconductor layer 70 first enters the E g1 region, and the spectrum whose photon energy is E g1 or higher is absorbed and photoelectrically emitted.
  • the spectrum is then incident on the E g2 region, and the spectrum whose photon energy is greater than or equal to E g2 and smaller than E g1 is absorbed and photoelectrically converted, and finally incident on the E gN region and out of the spectrum.
  • Those whose photon energy is greater than or equal to E gN and less than E gN-1 are absorbed and photoelectrically converted.
  • light in almost the entire solar spectrum or in the main wavelength range can be used for photoelectric conversion.
  • FIG. 26 shows the relationship between the photon energy h ⁇ of the AM1.5 sunlight spectrum and the number of photons n (h ⁇ ).
  • the photon energy of the AM1.5 sunlight spectrum is equally divided into 10 sections of energy width ⁇ .
  • Each E gi can be set by changing the composition of the semiconductor constituting each E gi region, the form of the semiconductor (amorphous, polycrystalline, single crystal), or the like. Specifically, each E gi region is formed of a different type of semiconductor. In this case, the semiconductor has a wide range of choices because it can be selected to have a high carrier mobility ⁇ regardless of the absorption coefficient ⁇ .
  • N 2
  • N 4
  • ⁇ 1.8eV
  • the CdSe fine particles (absorption peak wavelength 445 nm) having a diameter of about 1.9 nm in the E g1 region, the CdSe fine particles (absorption peak wavelength 585 nm) having a diameter of about 4.0 nm in the E g2 region,
  • the Eg3 region has a PbSe fine particle (absorption peak wavelength 800 nm) with a diameter of about 2 nm
  • the Eg4 region has a PbSe fine particle with a diameter of about 4.5 nm (absorption peak wavelength 1100 nm)
  • the Eg5 region has a PbSe fine particle with a diameter of about 90 nm (absorption peak wavelength).
  • E gi region in the case of N to 10 by controlling x only using GaInN x As 1-x or GaInN x P 1-x .
  • it may be configured E gi region using the group II-VI compound semiconductor to exhibit significant bowing the inclusion of Te (bowing) is known.
  • Specific examples of the case where an organic semiconductor and an inorganic semiconductor are used are as follows.
  • photons that cause the Stebler-Lonsky reaction which has been shown to be generated by light having a wavelength of 450 nm or less, are photoelectrically converted in advance before entering the a-Si layer. Therefore, the reaction can be suppressed, and therefore the lifetime of the photoelectric conversion region composed of the a-Si layer can be extended.
  • This high-energy photon removal function that suppresses coherent energy while performing effective photoelectric conversion is not just passivation, but also improves the reliability and extends the life of organic semiconductor photoelectric conversion units, which are also considered to be weak for outdoor use. Is also effective.
  • each E gi region is selected as necessary, and is several ⁇ m to several tens ⁇ m, for example.
  • the width of each E gi region (the width in the light traveling direction in the semiconductor layer 70) is also selected as necessary, and is, for example, several tens ⁇ m to several hundreds ⁇ m.
  • FIG. 27 is an enlarged view of the regions 71 to 74 in FIG. 25.
  • the thickness d of each of the regions 71 to 74 is several ⁇ m to several tens of ⁇ m, and the widths w 1 to w 4 of the regions 71 to 74 are several. Select from 10 ⁇ m to several hundred ⁇ m, for example, to 100 ⁇ m.
  • each of the regions 71 to 74 is constituted by a pn junction composed of a p-type semiconductor layer and an n-type semiconductor layer.
  • the junction surfaces of the pn junctions constituting the regions 71 to 74 are indicated by broken lines.
  • the semiconductor layer 70 is a pn junction.
  • three-dimensional space propagation black body radiation light for example, sunlight is incident on the light incident surface of the optical waveguide device portion of the photoelectric conversion device. Light does not directly enter the main surface of the semiconductor layer 70.
  • the three-dimensional spatially propagating light incident on the light incident surface of the optical waveguide device is incident on the reflecting mirror array 30 and reflected, passes through the refractive index anisotropic medium layer 20 and enters the planar optical waveguide 10. It is converted into two-dimensional space propagation light.
  • the two-dimensional spatially propagated light is efficiently guided inside the planar optical waveguide 10 while being repeatedly reflected on the upper and lower surfaces thereof, and exits from the end surface of the planar optical waveguide 10 to the side surface (end surface) of the semiconductor layer 70.
  • the semiconductor layer 70 In the semiconductor layer 70, and in the process, electron-hole pairs are generated in the semiconductor layer 70.
  • the electrons and holes thus generated move in the semiconductor layer 70 by drift or diffusion, and are collected by one and the other of the first electrode 80 and the second electrode 90. In this way, photoelectric conversion is performed in the semiconductor layer 70, and current (photocurrent) is extracted from the first electrode 80 and the second electrode 90 to the outside.
  • ⁇ is almost a right angle as described above, the number of absorbed photons and photocarrier collection efficiency are not in a trade-off relationship, unlike a conventional general solar cell.
  • ⁇ can be 90 °.
  • light that is guided through the inside of the planar optical waveguide 10 and emitted from the end face of the planar optical waveguide 10 from a direction perpendicular to the straight line connecting the first electrode 80 and the second electrode 90 in the shortest distance. Can be incident on the semiconductor layer 70.
  • the number of absorbed photons of the semiconductor layer 70 is governed by the width in the light incident direction (in the case where the semiconductor layer 70 is composed of regions 71 to 74, for example, the widths w 1 to w 4 of the regions 71 to 74).
  • the conversion efficiency is not controlled by the thickness d of the semiconductor layer 70 in the light absorption rate limiting region. That is, a very advantageous point of this photoelectric conversion device is that the light absorption direction and the carrier collection efficiency are completely optimized by making the incident direction of light with respect to the semiconductor layer 70 and the moving direction of carriers, for example, orthogonal to each other. It is possible to make it compatible.
  • the small absorption coefficient ⁇ of the semiconductor layer 70 is the width of the semiconductor layer 70 in the light incident direction (in the case where the semiconductor layer 70 is composed of regions 71 to 74, for example, the widths w 1 to w 4 of the regions 71 to 74). ) Can be compensated for, so that the material of the semiconductor layer 70 can be a material having a large ⁇ that is the only governing parameter without being restricted by the magnitude of ⁇ . By doing so, it is possible to obtain high photoelectric conversion efficiency, and it is also possible to obtain photoelectric conversion efficiency approaching the thermodynamic limit.
  • the following various advantages can be obtained. That is, in this photoelectric conversion device, the two-dimensional spatial propagation that propagates the three-dimensional spatial propagation light in a wide wavelength band through the inside of the planar optical waveguide 10 by the optical waveguide device portion as in the first embodiment. Since it can be converted into light, and two-dimensional spatially propagated light in a wide wavelength band can be incident on the semiconductor layer 70 to perform photoelectric conversion, extremely high photoelectric conversion efficiency can be obtained. Further, in this photoelectric conversion device, the planar optical waveguide 10 occupies a large area, and the entire planar optical waveguide 20 can receive incident light. Absent.
  • the light that is incident on the light incident surface of the optical waveguide device portion and finally guided and condensed inside the planar optical waveguide 10 is incident on the semiconductor layer 70.
  • the semiconductor layer 70 For example, as shown in the inset of FIG. 26, extremely high photoelectric conversion efficiency can be obtained.
  • the size of the planar optical waveguide 10 is 10 cm ⁇ 10 cm
  • the width of the semiconductor layer 70 is 10 cm
  • the light collection rate is (planar optical waveguide).
  • the photoelectric conversion efficiency at this time exceeds at least 60% from the inset of FIG.
  • the semiconductor layer 70 includes a plurality of regions in which the band gap or the HOMO-LUMO gap decreases stepwise in the light traveling direction in the semiconductor layer 70, the high-energy ultraviolet component of sunlight. Can be absorbed in the region of the first stage, for example, so that the ultraviolet component can be prevented from entering the region of the subsequent stage. For this reason, even if the latter region is made of amorphous silicon or an organic semiconductor, there is no problem of the Stebbler-Lonsky effect or the deterioration of the organic semiconductor. For this reason, it is possible to improve the photoelectric conversion efficiency and improve the reliability of the photoelectric conversion device. Furthermore, this photoelectric conversion device can be easily increased in area simply by increasing the area of the planar optical waveguide 10.
  • the semiconductor layer 70 is provided at the end of the planar optical waveguide 10, and the light guided in the planar optical waveguide 10 exits from the end surface of the planar optical waveguide 10 and enters the semiconductor layer 70. Therefore, a lens for condensing light is not necessary, the configuration is extremely simple, and optical axis alignment is not necessary, so that not only manufacturing is easy, but also manufacturing cost is reduced. It is also possible to prevent changes over time and changes over time. Further, the point that the photoelectric conversion efficiency is lowered with respect to the diffused light, which has been a drawback of the lens-type condensing system, also means that the light wave traveling direction conversion layer 60, for example, the light wave traveling direction conversion, has a plane structure and can be bonded together.
  • the planar optical waveguide 10 that is extremely compatible with the sheet, even for diffused light, up to about 95% compared to the photoelectric conversion efficiency for direct light (which is the efficiency of the light wave traveling direction conversion sheet) Can be recovered.
  • the space charge effect that is a problem in the amorphous silicon solar cell can be suppressed. That is, the amorphous silicon solar cell has a problem that even if the thickness of the amorphous silicon is increased to increase the light absorption, the internal electric field is canceled by the space charge and the characteristics are not improved.
  • this photoelectric conversion device when a partial region of the semiconductor layer 70 is made of amorphous silicon, the region between the first electrode 80 and the second electrode 90 provided above and below the semiconductor layer 70 is used. The distance can be reduced, and at the same time, the length of the amorphous silicon region in the light traveling direction in the semiconductor layer 70 can be increased, so that the space charge effect can be suppressed.
  • the surface that can efficiently transmit the two-dimensional spatially propagated light by converting the three-dimensional spatially propagated light into the two-dimensional spatially propagated light that is, the light receiving surface (of the optical waveguide device part). Since the surface of the reflector array 30) and the semiconductor layer 70 that is a photoelectric conversion region can be spatially separated, an increase in the temperature of the semiconductor layer 70 due to direct sunlight can be suppressed.
  • the planar optical waveguide 10 includes a portion having a gentle curvature, and the outside portion is disposed under the tile, under the center ridge of the roof, under the window rail, etc. When light is incident on the light incident surface of the reflector array 30, the semiconductor layer 70 can be disposed in a shaded portion.
  • both the temperature rise by direct light and the bad influence with respect to the chemical bond of the semiconductor layer 70 by the ultraviolet component in direct light can be suppressed.
  • the band gap E g1 of the first layer on which sunlight is incident to be equal to or greater than the coherent energy of the semiconductor material used, the chemical bonding of the subsequent semiconductor can be protected, the device life can be extended, and long-term reliability can be achieved. Is obtained.
  • the high efficiency of this photoelectric conversion device means that the loss as heat can be minimized, so the energy is highly efficient for the guided light. By reducing the component that is converted into electric energy and converted into heat, the temperature rise can be suppressed.
  • this photoelectric conversion device on the basis of the suppression of the temperature rise (through the reduction of energy lost as heat) due to the high efficiency, further, the bad place of the condensing system (due to the incidence of high intensity light) Temperature rise) can be eliminated, and only a good point (a point where the conversion efficiency rises by about 20% as shown in the inset in FIG. 26 as compared with the non-condensing system) can be utilized.
  • the advantages of this photoelectric conversion device can be summarized as follows. (1) The three-dimensional spatial propagation light in a wide wavelength band that can be incident from all directions (solid angle 2 ⁇ ) of the half space is narrowed down and finally converted into the two-dimensional spatial propagation light to efficiently obtain the semiconductor layer 70 in a yield and efficiency. Can be made incident. (2) The optical absorption and carrier collection efficiency can be independently and simultaneously optimized by the orthogonality between the photon traveling direction and the photocarrier moving direction. (3) Multi-stage multi-striping with a gradient composition is possible, and full-width photoelectric conversion of the solar spectrum is possible. (4) Due to the light collecting system, an efficiency increase of about 20% is expected compared to the non-light collecting system.
  • Planar optical waveguide that can respond to photons coming from all directions (solid angle 2 ⁇ ) in one half space of the planar optical waveguide 10 by the light wave traveling direction conversion layer 60 and that uses the reflector array 30. Since the light collecting system can easily achieve a light collecting ratio of 1000 or more by 10, deterioration of light collecting characteristics with respect to diffused light during cloudy weather is suppressed.
  • the first layer of multi-stripes photoelectrically converts high-energy photons that are harmful to the chemical bond of the substance (without wasting energy), followed by the intermediate gap semiconductor layer and the narrow gap semiconductor layer. Deterioration of the material to be formed can be prevented, and as a result, high reliability can be obtained. In particular, if a material that could not be used outdoors is used in the photoelectric conversion device, it can be used outdoors with high reliability.
  • this photoelectric conversion device can be said to be an ultimate photoelectric conversion system having many characteristics.
  • FIG. 29 shows a building according to the fourth embodiment, particularly a part of the outer wall.
  • the outer wall for example, the side wall 100, for example, the photoelectric conversion device 200 according to the third embodiment is a solar cell, and the reflector array 30 faces outward.
  • the reflector array 30 faces outward.
  • FIG. 30 shows an example of the photoelectric conversion device 200.
  • FIG. 31 shows a smartphone according to the fifth embodiment.
  • the photoelectric conversion device 200 according to the third embodiment is installed as a solar cell on at least a part of the display unit so that the reflector array 30 faces outward. ing.
  • FIG. 32 shows a photoelectric conversion device according to the sixth embodiment. As shown in FIG. 32, this photoelectric conversion device is a photoelectric conversion device according to the third embodiment except that a light wave traveling direction conversion layer 60 is provided on the reflector array 30 of the optical waveguide device portion. It has the same configuration as the conversion device.
  • FIG. 33 shows a light emitting device according to the seventh embodiment.
  • the light emitting device is different from the photoelectric conversion device according to the third embodiment in that a light source 400 is provided instead of the semiconductor layer 70, the first electrode 80, and the second electrode 90. That is, this light emitting device has an optical waveguide device portion and a light emitting portion.
  • the refractive index anisotropic medium layer 20 is only required to allow transmission of light incident on the refractive index anisotropic medium layer 20 from the inside of the planar optical waveguide 10 in the third embodiment.
  • the form is different.
  • the light source 400 a single light source may be used, or a plurality of light sources having different emission wavelengths may be used.
  • the light emission direction from the light source 400 is directed to the end face of the planar optical waveguide 10.
  • a semiconductor light emitting element such as a light emitting diode or a semiconductor laser is used.
  • the light emitting device that can extract light from the reflector array 30 in almost the same direction and with uniform intensity. Can be realized.
  • This light-emitting device can be used, for example, as a planar light source, and can be used as a lighting device or a backlight of a liquid crystal display.
  • FIG. 35 shows an illumination system according to the eighth embodiment.
  • the illumination system includes an optical waveguide device 500, an optical waveguide 600, and an illumination device 700.
  • the light exit surface of the optical waveguide device 500 is coupled to the light incident surface of the optical waveguide 600, and the light exit surface of the optical waveguide 600 is coupled to the light incident surface of the illumination device 700.
  • the light emitted from the light exit surface of the optical waveguide device 500 enters the light incident surface of the optical waveguide 600, is transmitted to the light incident surface of the illumination device 700 through the optical waveguide 600, and is transmitted from the illumination device 700 to the outside. Illumination light is extracted.
  • the optical waveguide device 500 for example, the optical waveguide device according to the first embodiment or the second embodiment is used.
  • the optical waveguide 600 is configured flexibly, and a planar optical waveguide (two-dimensional optical waveguide), an integrated fiber composed of a plurality of optical fibers, or the like is used.
  • the optical waveguide 600 is configured such that there is no light leakage during light guiding.
  • the illumination device 700 has, for example, the same configuration as the optical waveguide device portion of the light emitting device according to the seventh embodiment, and uses three-dimensional spatially propagated light emitted from the reflector array 30 as illumination light.
  • an optical fiber that can be used, or an integrated fiber that is configured so that each optical fiber can be easily leaked to the outside while being guided, and the leaked light can be used as illumination light.
  • FIG. 36 shows an application example of a lighting system.
  • a lighting system is installed on the outer wall of a building 800 such as a building.
  • the optical waveguide device 500 is installed on the outer wall on the south surface of the building 800
  • the lighting device 700 is installed on the outer wall on the north surface
  • the optical waveguide device 500 and the lighting device 700 are connected to each other.
  • a waveguide 600 is installed from the side wall to the south outer wall and the north outer wall.
  • the reflecting mirror array 30 of the optical waveguide device 500 and the light emission surface (illumination light extraction surface) on the front surface of the illumination device 700 are respectively on the front side.
  • the three-dimensional spatially propagated light is The light is converted into spatially propagated light, enters the light incident surface of the illuminating device 700 via the optical waveguide 600, and the illuminating light is extracted from the light emitting surface on the front surface of the illuminating device 700 to the outside as three-dimensional spatially propagated light.
  • the lighting device 700 having the same configuration as that of the optical waveguide unit of the light emitting device according to the seventh embodiment is used, the illumination light is extracted in a direction perpendicular to the light emitting surface on the front surface of the lighting device 700.
  • illumination light can be extracted in various directions as shown in FIG.
  • illumination device 700 is made of integrated fibers and each optical fiber is configured so that light is likely to leak to the outside while being guided, illumination is performed in various directions as shown in FIG. 38 without using a diffusion plate. Light can be extracted.
  • externally incident three-dimensional space propagation light is taken from the light incident surface of the optical waveguide device 500 and converted into two-dimensional space propagation light.
  • An illumination system capable of propagating propagating light in the optical waveguide 600 and transmitting it to the light incident surface of the illumination device 700 and extracting the illumination light from the light exit surface of the illumination device 700 can be realized. Since none of the optical waveguide device 500, the optical waveguide 600, and the illumination device 700 uses electric power, this illumination system does not require electric power.
  • an illumination system can be manufactured simply by connecting the optical waveguide device 500, the optical waveguide 600, and the illumination device 700.
  • the lighting system can be easily manufactured. Then, by installing this illumination system on the outer wall of the building 800 as described above, the sunlight incident on the south surface of the building 800 is taken from the optical waveguide device 500 and finally installed on the wall surface of the north surface. It can be taken out as illumination light from the light exit surface of the apparatus 700. For this reason, even when there is little sunshine on the north side due to the height of the building 800 or the like, the north region can be illuminated with the illumination light emitted from the lighting device 700, so that the sunshine right problem can be alleviated.
  • the optical waveguide device 500 is installed in a place where sunlight enters, and the illumination device 700 is installed in a place where illumination is desired, so that sunlight is emitted from the optical waveguide device 500.
  • the light can be captured and transmitted to the illumination device 700 via the optical waveguide 600, and illumination light can be emitted from the illumination device 700 for illumination.
  • FIG. 39 shows an optical waveguide device according to the ninth embodiment.
  • This optical waveguide device has two planar optical waveguides. That is, as shown in FIG. 39, in this optical waveguide device, a transparent refractive index anisotropic medium layer 20a, a first-stage planar optical waveguide 10a, a transparent refractive index anisotropic medium layer 20b, a polarization direction conversion, and the like.
  • the layer 900, the transparent refractive index anisotropic medium layer 20c, and the second-stage planar optical waveguide 10b are laminated in this order.
  • a reflecting mirror array 30 is provided on the main surface of the refractive index anisotropic medium layer 20a opposite to the planar optical waveguide 10a.
  • the back surface of the second-stage planar optical waveguide 10b opposite to the refractive index anisotropic medium layer 20c is in contact with the substrate 40.
  • the refractive index anisotropic medium layer 20a the three-dimensional spatially propagated light is reflected by the reflector array 30, and obliquely crosses the refractive index anisotropic medium layer 20a to be the main surface of the planar optical waveguide 10a.
  • the light entering the planar optical waveguide 10a is allowed to pass through the planar optical waveguide 10a diagonally across the planar optical waveguide 10a.
  • the refractive index anisotropic medium layer 20b allows light transmitted through the planar optical waveguide 10a to enter the inside of the polarization direction conversion layer 900 obliquely across the refractive index anisotropic medium layer 20b. Refractive index anisotropy.
  • the light transmitted through the polarization direction changing layer 900 obliquely crosses the refractive index anisotropic medium layer 20c and passes through the main surface of the planar optical waveguide 10b.
  • the light that enters the planar optical waveguide 10b is totally reflected by the back surface of the planar optical waveguide 10b obliquely across the planar optical waveguide 10b.
  • the refractive index anisotropic medium layers 20a, 20b, and 20c the same layers as those of the refractive index anisotropic medium layer 20 of the first embodiment are used.
  • the planar optical waveguides 10a and 10b those similar to the planar optical waveguide 10 of the first embodiment are used.
  • the polarization direction conversion layer 900 rotates the polarization direction of light incident from one main surface of the polarization direction conversion layer 900 by 90 ° and emits the light from the other main surface of the polarization direction conversion layer 900.
  • the polarization direction conversion layer 900 for example, various types of conventionally known liquid crystals used in liquid crystal displays can be used, and are selected as necessary.
  • the other configuration of the optical waveguide device is the same as that of the first embodiment.
  • This optical waveguide device can be manufactured in the same manner as the optical waveguide device manufacturing method according to the first embodiment.
  • FIG. 40A shows an enlarged part of this optical waveguide device.
  • incident light enters the reflector array 30 of the optical waveguide device from the outside in a substantially vertical direction.
  • sunlight which is natural light
  • Natural light is a combination of linearly polarized light in which the direction of vibration of the electric field of light is in the range of 360 ° around the incident direction.
  • the incident light is reflected by each reflecting mirror 31 of the reflecting mirror array 30, and then enters the refractive index anisotropic medium layer 20a as shown in FIGS. 40A, 40B, and 40C.
  • FIG. 40A, 40B, and 40C shows an enlarged part of this optical waveguide device.
  • the xyz three-dimensional coordinate system is taken, and the incident direction is the z-axis direction.
  • All polarized light constituting natural light can be decomposed into a component in which the vibration direction of the electric field of the light is in the x-axis direction and a component in which the vibration direction of the electric field is in the y-axis direction.
  • the incident light has a component in which the vibration direction of the electric field of the light is in the x-axis direction, that is, polarized light whose in-plane polarization direction is in the incident plane (in-plane polarization: p-polarized light, indicated by left and right arrows in the figure),
  • in-plane polarization: p-polarized light, indicated by left and right arrows in the figure When the vibration direction of the electric field of the light is composed of a component in the y-axis direction, that is, polarized light whose plane of vibration is in a plane perpendicular to the incident plane (plane-polarized light: s-polarized light, indicated by a circle with an x arrow).
  • plane-polarized light s-polarized light, indicated by a circle with an x arrow
  • the refractive index anisotropy of the refractive index anisotropic medium layer 20a is appropriately set, the light incident on the refractive index anisotropic medium layer 20a is transmitted through the refractive index anisotropic medium layer 20a to be further reduced. It enters the planar optical waveguide 10a of the eye. If the refractive index anisotropy of the refractive index anisotropic medium layer 20b is appropriately set, as shown in FIGS. 40A and 40B, the vibration direction of the electric field of the light entering the planar optical waveguide 10a is changed.
  • the component in the y-axis direction enters the refractive index anisotropic medium layer 20b without being reflected at the interface between the planar optical waveguide 10a and the refractive index anisotropic medium layer 20b.
  • the light that enters the refractive index anisotropic medium layer 20b passes through the refractive index anisotropic medium layer 20b and enters the polarization direction conversion layer 900 (not shown in FIG. 40B).
  • the refractive index anisotropy of the refractive index anisotropic medium layers 20a and 20b is appropriately set, the component in which the vibration direction of the electric field is the x-axis direction among the light that has entered the planar optical waveguide 10a.
  • (in-plane polarized light) is totally reflected at the interface between the planar optical waveguide 10a and the refractive index anisotropic medium layer 20b, and then has a refractive index different from that of the planar optical waveguide 10a.
  • the total reflection is repeated between the interface with the isotropic medium layer 20a and the interface between the planar optical waveguide 10a and the refractive index anisotropic medium layer 20b, and the inside of the planar optical waveguide 10a is guided in the direction of the arrow.
  • the light is emitted from the right end surface of the planar optical waveguide 10a.
  • Polarized light (plane-polarized light) whose vibration direction of the electric field incident on the polarization direction conversion layer 900 is the y-axis direction is rotated by 90 ° by the polarization direction conversion layer 900, that is, the vibration direction of the electric field is x
  • the light is converted in the axial direction and emitted from the polarization direction conversion layer 900.
  • the light emitted from the polarization direction conversion layer 900 follows the above first stage process because the vibration direction of the electric field is the x-axis direction (in-plane polarization). That is, the light emitted from the polarization direction conversion layer 900 passes through the refractive index anisotropic medium layer 20c and then enters the second-stage planar optical waveguide 10b.
  • Polarized light in which the vibration direction of the electric field entering the planar optical waveguide 10b is in the x-axis direction is totally reflected at the interface between the planar optical waveguide 10b and the substrate 40, and then the planar optical The total reflection is repeated between the interface between the waveguide 10b and the refractive index anisotropic medium layer 20c and the interface between the planar optical waveguide 10b and the substrate 40, and the inside of the planar optical waveguide 10b is guided in the direction of the arrow, The light is emitted from the right end surface of the planar optical waveguide 10b. As described above, it is possible to guide both the in-plane polarized light and the plane-polarized light constituting the incident light through the planar optical waveguides 10a and 10b.
  • the substrate 40 may be an isotropic refractive index layer having a refractive index appropriately set, or a refractive index anisotropic medium layer having the same attribute as the refractive index anisotropic medium layer 20b may be used as the planar optical waveguide 10b. It may be a multilayer structure on the side.
  • the refractive index for example, for the refractive index anisotropic medium layer 20a, the 11 components of the refractive index tensor in the matrix display of 3 rows and 3 columns are 1.91, the 22 components are also 1.91, and 33 components.
  • the refractive index anisotropic medium layer 20b 11 components of the refractive index tensor are 1.45, 22 components are 1.91, 33.
  • the component is also a refractive index anisotropic material represented by a diagonal matrix of 1.91, and the refractive index of the planar optical waveguide 10a has an isotropic refractive index 2.1.
  • the anisotropic medium layer 20a enters the planar optical waveguide 10a at an angle of 45 ° with respect to the interface, the results shown in FIGS. 40B and 40C are obtained.
  • the refractive index anisotropic medium layers 20a and 20b are made of liquid crystal
  • the refractive index anisotropic medium layer 20a disk-like liquid crystal molecules are arranged with the normal line of the disk set in the z-axis direction.
  • the above diagonal matrix can be realized when the disk-like liquid crystal molecules are arranged with the normal line of the disk aligned in the x-axis direction.
  • the component (plane direct polarization) in which the vibration direction of the electric field is the y-axis direction is reflected at the interface between the planar optical waveguide 10a and the refractive index anisotropic medium layer 20b.
  • the component (in-plane polarization) whose electric field vibration direction is in the x-axis direction passes through the refractive index anisotropic medium layer 20a and enters the planar optical waveguide 10a. It can be seen that the light is totally reflected at the interface between the planar optical waveguide 10a and the refractive index anisotropic medium layer 20b. At this time, the state of reflection (transmission) of light from the planar optical waveguide 10a toward the refractive index anisotropic medium layer 20b (propagating upward in FIG. 40A) is determined from the shape of the refractive index tensor to the planar optical waveguide.
  • ⁇ n 0.46.
  • a system in which ⁇ n exceeds 0.7 has been reported by the research group listed in Non-Patent Document 2. The range is not considered narrow.
  • 41 shows a result obtained by simulating the state of light transmitted through the polarization direction conversion layer 900 with the wavelength of incident light set to 500 nm.
  • 41 shows the distribution in the xz plane of the magnitude (intensity) of the amplitude E y in the y-axis direction of the electric field of the light wave, and the right figure of FIG. 41 shows the x of the electric field of the light wave.
  • the distribution in the xz plane of the magnitude (intensity) of the amplitude E x in the axial direction is shown. As shown in FIG.
  • FIG. 42 and FIG. 43 show the results obtained by simulation of the state of light transmitted through the polarization direction conversion layer 900 while changing the wavelength of incident light to 410 nm and 670 nm, respectively.
  • the polarization direction conversion layer 900 a layer having a four-layer structure capable of rotating the polarization direction in a stepwise manner for a total rotation of 90 ° was used.
  • the left figure of FIG. 42 shows the distribution in the xz plane of the magnitude (intensity) of the amplitude E x in the x-axis direction of the electric field of the light wave
  • the right figure of FIG. 42 shows the y of the electric field of the light wave.
  • the distribution in the xz plane of the magnitude (intensity) of the amplitude E y in the axial direction is shown.
  • FIG. 43 shows the distribution in the xz plane of the magnitude (intensity) of the amplitude E x in the x-axis direction of the electric field of the light wave, and the right figure of FIG. 43 shows the y-axis of the electric field of the light wave.
  • the distribution in the xz plane of the magnitude (intensity) of the direction amplitude E y is shown. As shown in FIG. 42 and FIG.
  • both in-plane polarization and plane-polarization constituting the incident light are converted into two-stage planar optical waveguides 10a and 10b. Therefore, it is possible to obtain the advantage that the utilization efficiency of light incident on the optical waveguide device can be maximized.
  • FIG. 44 shows a photoelectric conversion device according to the tenth embodiment. As shown in FIG. 44, this photoelectric conversion device uses the optical waveguide device according to the ninth embodiment.
  • this photoelectric conversion device has an optical waveguide device portion and a photoelectric conversion portion as in the third embodiment, but the optical waveguide device portion is the same as the optical waveguide device shown in FIG. It has a simple structure.
  • Other configurations of the photoelectric conversion device are the same as those of the third embodiment.
  • the optical waveguide device portion is constituted by the optical waveguide device according to the ninth embodiment, the utilization efficiency of light incident on the optical waveguide device portion can be maximized. For this reason, since this photoelectric conversion device can perform photoelectric conversion using almost all of the light incident on the optical waveguide device, it is possible to achieve extremely high photoelectric conversion efficiency (up to 75%) that approaches the thermodynamic limit. It becomes possible.
  • a layer having a small refractive index is formed from the back side by changing the refractive index of the glass waveguide by, for example, an ion exchange method, and has been guided two-dimensionally.
  • the light approaches the semiconductor layer 70, the light is condensed in the direction perpendicular to the surface, and gathers to the same thickness as the semiconductor layer 70 at the contact portion between the planar optical waveguide 10 and the semiconductor layer 70 ( Asymptotically concentrate the light).
  • the UV light component in the sunlight spectrum does not have a high ratio, as can be seen from FIG.
  • the light having a lower energy component is converted into two-dimensional spatially propagated light, guided in the planar optical waveguide 10 and incident on the semiconductor layer 70, thereby photoelectrically converting the light into the semiconductor layer 70.
  • a-Si or an organic semiconductor is included, the lifetime of the photoelectric conversion device can be increased and the reliability can be improved.
  • a photoelectric conversion device system (or a solar cell system) may be configured by laying a plurality of photoelectric conversion devices according to the third embodiment or the tenth embodiment.
  • the above-mentioned redirection wave guide surrounds the entire side surface of the building in a headband shape, and the semiconductor layer 70 coupled thereto is, for example, at one location on the north side of the building (ie For example, they may be arranged in a concentrated manner in an area of several m in the vertical direction and several mm to 1 cm in the horizontal direction.
  • this headband-shaped redirection wave guide itself has a so-called reverse redirection (that is, two-dimensional spatial propagation light is returned to three-dimensional spatial propagation light) in a part of the shade that exists in the building. Therefore, it can also be used for applications that substantially eliminate the shade formed by the building.
  • the thin film semiconductor solar cell can be compensated for its thin film characteristics and improved characteristics. Can bring.
  • SYMBOLS 10, 10a, 10b Planar optical waveguide, 20, 20a, 20b, 20c ... Refractive index anisotropic medium layer, 30 ... Reflector array, 40 ... Substrate, 60 ... Light wave direction change layer, 70 ... Semiconductor layer, DESCRIPTION OF SYMBOLS 80 ... 1st electrode, 90 ... 2nd electrode, 100 ... Side wall, 200 ... Photoelectric conversion apparatus, 300 ... Smartphone, 400 ... Light source, 500 ... Optical waveguide apparatus, 600 ... Optical waveguide, 700 ... Illumination apparatus, 800 ... Building, 900 ... Polarization direction conversion layer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
  • Led Device Packages (AREA)
  • Photovoltaic Devices (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

L'invention concerne un dispositif de guide d'onde optique qui comprend un guide d'onde optique planaire 10, une couche transparente 20 située sur une surface principale de ce dernier et ayant une anisotropie d'indice de réfraction, et un réseau de miroirs réfléchissants 30 placé sur ce dernier. Des miroirs réfléchissants 31 du réseau de miroirs réfléchissants 30 réfléchissent une lumière de propagation d'espace tridimensionnel entrant depuis l'extérieur, et amènent la lumière de propagation d'espace tridimensionnel réfléchie à entrer dans la couche 20 ayant une anisotropie d'indice de réfraction. La couche 20 ayant une anisotropie d'indice de réfraction permet la transmission de lumière qui entre dans la couche 20 ayant une anisotropie d'indice de réfraction par la réflexion de la lumière de propagation d'espace tridimensionnel par les miroirs réfléchissants 31, et limite la transmission de lumière qui entre dans la couche 20 ayant une anisotropie d'indice de réfraction après l'entrée dans le guide d'onde optique planaire 10 à travers la couche 20 ayant une anisotropie d'indice de réfraction puis entièrement réfléchie par la surface arrière du guide d'onde optique planaire 10. Un dispositif de conversion photoélectrique est configuré par fourniture d'une couche semi-conductrice pour une conversion photoélectrique au niveau d'une extrémité du guide d'onde optique planaire 10.
PCT/JP2016/079575 2015-10-09 2016-10-05 Dispositif de guide d'onde optique, dispositif de conversion photoélectrique, structure architecturale, appareil électronique et dispositif électroluminescent Ceased WO2017061448A1 (fr)

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WO2019059342A1 (fr) * 2017-09-22 2019-03-28 国立大学法人北海道大学 Dispositif guide d'ondes optiques, dispositif de conversion photoélectrique, bâtiment, dispositif électronique, corps mobile et dispositif guide d'ondes électromagnétiques
CN113410326A (zh) * 2021-05-28 2021-09-17 宁波大学 一种基于平面波导的光伏玻璃窗
WO2022124283A1 (fr) * 2020-12-10 2022-06-16 国立大学法人北海道大学 Dispositif de conversion photoélectrique, bâtiment, et objet mobile
JP2024015266A (ja) * 2019-12-09 2024-02-01 エガロン，クラウディオ，オリヴェイラ 導波路の側面照射のシステムおよび方法

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WO2014061719A1 (fr) * 2012-10-19 2014-04-24 国立大学法人北海道大学 Dispositif de conversion photoélectrique, structure construite et instrument électronique
JP2014150143A (ja) * 2013-01-31 2014-08-21 Panasonic Corp 太陽電池構造体
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US20010011551A1 (en) * 1999-11-26 2001-08-09 Peter Peumans Photovoltaic device with optical concentrator and method of making the same
JP2014160824A (ja) * 2007-05-01 2014-09-04 Morgan Solar Inc 導光ソーラーパネルおよびその製造方法
WO2014061719A1 (fr) * 2012-10-19 2014-04-24 国立大学法人北海道大学 Dispositif de conversion photoélectrique, structure construite et instrument électronique
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Publication number Priority date Publication date Assignee Title
WO2019059342A1 (fr) * 2017-09-22 2019-03-28 国立大学法人北海道大学 Dispositif guide d'ondes optiques, dispositif de conversion photoélectrique, bâtiment, dispositif électronique, corps mobile et dispositif guide d'ondes électromagnétiques
JPWO2019059342A1 (ja) * 2017-09-22 2020-10-15 国立大学法人北海道大学 光導波装置、光電変換装置、建築物、電子機器、移動体および電磁波導波装置
JP7270252B2 (ja) 2017-09-22 2023-05-10 国立大学法人北海道大学 光導波装置、光電変換装置、建築物、電子機器、移動体および電磁波導波装置
JP2024015266A (ja) * 2019-12-09 2024-02-01 エガロン，クラウディオ，オリヴェイラ 導波路の側面照射のシステムおよび方法
US12372704B2 (en) 2019-12-09 2025-07-29 Claudio Oliveira Egalon Systems and methods of side illumination of waveguides
WO2022124283A1 (fr) * 2020-12-10 2022-06-16 国立大学法人北海道大学 Dispositif de conversion photoélectrique, bâtiment, et objet mobile
CN113410326A (zh) * 2021-05-28 2021-09-17 宁波大学 一种基于平面波导的光伏玻璃窗

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