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WO2017043892A1 - Appareil de fabrication de polysilicium - Google Patents

Appareil de fabrication de polysilicium Download PDF

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Publication number
WO2017043892A1
WO2017043892A1 PCT/KR2016/010106 KR2016010106W WO2017043892A1 WO 2017043892 A1 WO2017043892 A1 WO 2017043892A1 KR 2016010106 W KR2016010106 W KR 2016010106W WO 2017043892 A1 WO2017043892 A1 WO 2017043892A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
passage
reaction
base plate
cooling water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2016/010106
Other languages
English (en)
Korean (ko)
Inventor
박성은
김지웅
이희동
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hanwha Chemical Corp
Original Assignee
Hanwha Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160102394A external-priority patent/KR101895538B1/ko
Application filed by Hanwha Chemical Corp filed Critical Hanwha Chemical Corp
Priority to US15/750,251 priority Critical patent/US10293326B2/en
Priority to MYPI2018700588A priority patent/MY185420A/en
Priority to CN201680052170.1A priority patent/CN108025918B/zh
Publication of WO2017043892A1 publication Critical patent/WO2017043892A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Definitions

  • the present invention relates to a polysilicon production apparatus. More specifically, the present invention relates to a polysilicon production apparatus for forming a laminar flow of a source gas flow in a chemical vapor deposition reactor.
  • Polycrystalline silicon that is, polysilicon (polysilicon or polycrystalline silicon) is a component used as a basic raw material for the photovoltaic power generation industry and the semiconductor industry, and the demand has increased dramatically with the recent development of the industry. have.
  • a method for producing polysilicon is typically a silicon precipitation process (or chemical vapor deposition process) for forming polysilicon in a solid state from a silane raw material gas.
  • the silicon precipitation process generates silicon fine particles through hydrogen reduction reaction and pyrolysis at a high temperature in silane raw material gas, and forms silicon fine particles in a polycrystalline state on the surface of a rod or particle to precipitate.
  • simens precipitation using a chemical vapor deposition reactor and a method using a f hiidi zed bed reactor.
  • Siemens chemical vapor deposition reactor is a batch process equipment as the core equipment of polysilicon manufacturing process.
  • Chemical vapor deposition method installs silicon filament with 7 ⁇ 10 ⁇ diameter and 2500 ⁇ 3000 ⁇ length in the reaction vessel and applies resistance to silicon filament to generate resistance heat. Input to produce a silicon rod (Si rod) of 120 150 ⁇ diameter.
  • the source gas enters the lower part of the reaction vessel, and after the process, turns from the upper part and exits the lower part again, thereby forming a turbulent flow.
  • Turbulence increases the heat dissipation by convection, increasing the electrical unit.
  • the source gas stagnates between the incoming and outgoing streams, forming a hot spot, resulting in variations in gas velocity, silicon rod diameter, and silicon rod surface temperature around the silicon rod.
  • Non-uniform surface temperatures of the silicon rods produce popcorn around the hot spots, degrading the productivity and quality of the polysilicon. In other words, the competitiveness of polysilicon is falling.
  • One aspect of the present invention is to provide a polysilicon production apparatus for forming a flow of source gas in a laminar flow (l aminar f low) inside a chemical vapor deposition reactor. That is, an object of the present invention is to maximize conserving energy by suppressing convective heat loss through laminar flow at a slow flow rate, and minimizing the variation of gas velocity, the diameter variation of the silicon rod, and the surface temperature of the silicon rod around the silicon rod. It is to provide a polysilicon production apparatus.
  • Polysilicon manufacturing apparatus is disposed on the base plate semi-ungunggi to form a semi-fiber burr.
  • a pair of electrode terminals installed on the base plate and extending into the reaction chamber are installed on the electrode terminals in the reaction chamber, and connected to each other by a rod bridge at an upper end thereof.
  • a rod filament in which a silicon rod is formed by chemical vapor deposition of raw material gas flowing into a gas inlet, and inserted into a through hole provided on an upper side of the reaction vessel are supported by the base plate.
  • a gas passage for discharging the gas after the reaction is connected to a gas outlet formed in the base plate, and a cooling water passage is formed outside the gas passage to transfer a low-temperature water angle from the outside of the reactor to the water angle passage. It includes a cooling jacket to inlet and circulate to discharge the water of the silver pentagonal water to the outside of the reaction.
  • the gas outlet is formed in the center of the base plate.
  • the gas inlet is a radial direction of the base plate at the gas outlet It may be disposed at a position spaced outward.
  • the cooling jacket may be disposed at the center of the reaction chamber to connect the gas passage to the gas outlet.
  • the gasket may further include a gasket disposed between the shell jacket and the base plate, wherein the gasket may communicate the gas passage with the gas outlet, and block the mall communication with the inside of the reaction chamber.
  • the bottom of the shell jacket forms a concave groove.
  • the gasket may be coupled to the concave groove on one side and supported on the base plate on the other side.
  • the shell jacket is installed in the reaction vessel is connected to the cooling water passages in the cooling water inlet for inlet coolant.
  • a cooling water outlet connected to the cooling water passage to discharge high-temperature cooling water, and connecting the angle water inlet and the angle water outlet to the cooling water passage, being spaced apart from each other to form the gas passage on the inside, and the cooling water passage on the outside It may include an inner pipe and an outer pipe forming a.
  • the reaction vessel is provided with a first flange on the outside of the installation hole to be penetrated, the angle jacket includes a second flange fixed to the angle water inlet and the cooling water outlet, the cooling jacket is inserted into the inside of the reaction machine In the condition.
  • the second flange may close the installation hole on the first flange and be fastened to the first flange by a fastening member.
  • the inner pipe and the outer pipe may form an opening of the gas passage by facing the upper end of the rod filament.
  • the shell jacket is Incoloy 800H, Incoloy 800.
  • the source gas may include trichlorosilane (TCS).
  • the source gas may further include at least one of dichlorosi lane (DCS), silicon tetrachloride (STC), and hydrogen.
  • DCS dichlorosi lane
  • STC silicon tetrachloride
  • hydrogen hydrogen
  • the cooling material having a gas passage and a coolant passage inside the reactor. Since the gas is discharged from the top to the gas passage after the chemical vapor deposition reaction, it is possible to form a laminar flow (l am i nar f l ow) that is set from the bottom to the top of the flow of the raw material gas inside the reaction vessel.
  • the laminar flow of the source gas can minimize the variation of the gas velocity, the variation of the diameter of the silicon rod, and the variation of the silicon rod surface temperature around the silicon rod formed by the deposition of silicon on the rod filament. Laminar flow can also reduce heat losses due to convection, thus lowering the electrical unit.
  • FIG. 1 is a cross-sectional view of a polysilicon manufacturing apparatus according to an embodiment of the present invention.
  • FIG. 2 is an exploded perspective view of the upper part and the corner jacket of FIG. 3 is a partial cross-sectional view of the cooling jacket installed on the base plate.
  • FIG. 4 is a state diagram in which the source gas forms a laminar flow inside the reaction vessel of FIG. 1.
  • FIG. 5 is a graph showing the deviation of the surface temperature between the silicon rods by position in the prior art and in one embodiment.
  • Figure 6 is a graph showing the power consumption in the prior art.
  • FIG. 7 is a graph illustrating power consumption in one embodiment.
  • FIG. 8 is simulated at the reaction period of FIG. It is a state diagram in which source gas forms laminar flow.
  • Comparative Example 1 It is a state diagram in which source gas forms turbulence by simulating in the reaction period of 2 and 3.
  • 16 is a state diagram illustrating the formation of a hot spot within the reaction period of the comparative example.
  • FIG. 17 illustrates that a hot spot is formed within the reaction period of FIG. 1. State diagram.
  • FIG. 1 is a cross-sectional view of a polysilicon manufacturing apparatus according to an embodiment of the present invention.
  • a polysilicon production apparatus according to an embodiment is provided with a cooling jacket 50 in the reactor (Siemens chemical vapor deposition reactor) 10. Supply gas and cool gas after reaction Discharge into the gas passage 51 of the jacket 50.
  • Cooling jacket 50 is outside the gas passage 51 while exhausting the gas after the reaction to the internal gas passage 51. After reacting with the cooling water passage 52 provided, the gas is cooled.
  • the cooling of the gas after the reaction is such that the hot reaction gas after being discharged into the gas passage 51 does not thermally affect the raw material gas introduced into the reaction vessel 10.
  • the cooling jacket 50 is installed at the center of the reaction chamber 11 that is set as the reaction vessel 10 so that the gas passage 51 from the upper side inside the reactor 10 corresponding to the reaction point after the reaction is completed. Can be discharged through). And source gas is introduced from the lower part of the reaction vessel 10. Since the gas is immediately discharged from the top of the reaction vessel 10 after the reaction, laminar flow of the source gas can be effectively formed inside the reactor 10.
  • the source gas flows from the bottom to the top, and after the reaction, the gas is discharged from the top center to the bottom to form a laminar flow in the reaction chamber 11, so that the gas velocity deviation around the silicon rod 40, the silicon rod ( The deviation of the diameter of 40) and the deviation of the silver on the surface of the silicon rod 40 become smaller.
  • the source gas contains trichlorosilane (trichloi-osilane (TCS) (SiHCl 3 + H 2 ⁇ Si + SiHCl 3 + SiCl 4 + HCl + H 2 ), so that the conventional monosilane flow rate
  • the silicon rod 40 can be manufactured with a low flow rate of source gas.
  • the source gas may further include dichlorosi lane (DCS), silicon tetrachloride (STC), and one or more hydrogen hydrogen.
  • DCS dichlorosi lane
  • STC silicon tetrachloride
  • hydrogen hydrogen one or more hydrogen hydrogen.
  • Trichlorosilane has weak corrosion resistance due to the decomposition temperature of 500-600 ° C., the deposition rate of about 1.8-2.0 mm / hr and the presence of C1.
  • monosilane has a decomposition temperature of 300 to 400 ° C. and a deposition rate of about 1 kW / hr and a strong Corrosion resistant
  • Raw gas containing trichlorosilane is about 200 ° C. higher at decomposition and deposition temperatures when compared to monosilane. Due to this, when the chemical vapor deposition in the reaction (10). Crude gas containing trichlorosilane (TCS) is less than monosilane. The possibility of producing silicon powder can be reduced, thereby increasing the deposition efficiency of silicon.
  • Trichlorosilane TCS
  • the polysilicon manufacturing apparatus of one embodiment is installed in the reactor 10, the base plate 21, a plurality of pairs of electrode terminals 20 and the electrode terminal 20 to form the reaction chamber (11). And a plurality of pairs of rod filaments 30 connected at the top to the rod bridge 31.
  • the reactor 10 consists of a bell shaped reactor to form a reaction chamber 11 on the base plate 21. It is coupled to the base plate 21 in a gas tight structure.
  • the counterunggi 10 includes a bell jar 12 that forms the counterung ramber 11, and a burr cover 13 that is spaced apart from the bell jar 12 to allow the corner agent to flow between each other.
  • the base plate 21 is combined with the counterunggi 10 to form a counterungban server (11).
  • the raw gas is introduced into the reaction chamber 11 through a gas inlet 22 connected to a silicon-containing gas source (not shown).
  • the gas is discharged out of the reaction chamber 11 through the gas outlet 23.
  • the gas outlet 23 is provided at the center of the base plate 21 to discharge the gas after the reaction.
  • the gas inlet 22 is formed at a plurality of positions at the outside of the gas outlet 23, that is, at the radially outer side of the base plate 21.
  • the gas inlet 22 may be provided with one per 3 to 5 silicon rods 40. have.
  • the source gas introduced at the end of the gas inlet 22 may have a gas velocity of 3-6 m / s.
  • the pair of electrode terminals 20. 20 extend from the outside of the base plate 21 to the inside of the reaction chamber 11.
  • An electrode 25 supported by the rod support 24 is connected to an end of the electrode terminal 20.
  • the pair of rod filaments 30, 30 are spaced apart from each other in the reaction chamber 11 and are horizontally connected by a rod bridge 31 at an upright top.
  • the rod filaments 30 and 30 constituted in pairs are connected to an external electric energy supply source through the electrode 25 and the electrode terminal 20 at the lower end thereof.
  • the pair of rod filaments 30, 30 together with the rod bridge 31 form one electrical circuit.
  • Polysilicon is formed by chemical vapor deposition (CVD) after decomposition of the silane chloride-based compound on the surfaces of the red filamented rod filament 30 and the rod bridge 31. Since polysilicon precipitates in the polycrystalline form on the surface portions of the rod filament 30 and the rod bridge 31, the silicon rod 40 and the rod bridge 31 can be increased to a diameter of a desired size.
  • CVD chemical vapor deposition
  • the cooling jacket 50 circulates the cooling water to prevent the deposition of polysilicon on the surface of the shell ash (50).
  • the silicon rod 40 does not melt.
  • each jacket 50 may be formed of Incoloy 800H. Incoloy 800, stainless steel (SS316L, SS316) or Hastelloy. This material may not affect the purity of the deposited polysilicon, and has a high temperature (for example, more than 1000 ° C) stability, with resistance to corrosion, and easy to process. It is characterized by low price.
  • the coolant 50 is inserted into the installation hole 14 provided on the upper side of the reaction machine 10 and supported by the base plate 21 at the lower end thereof.
  • the corner ash 50 is connected to the gas outlet 23 formed in the base plate 21 by forming the gas passage 51 inside. It is possible to discharge the gas into the gas passage 51 and the gas outlet 23 after the reaction.
  • the cooling retainer 50 forms a water angle passage 52 on the outside of the gas passage 51 to allow the water angle to be circulated.
  • the cooling water passage 52 is configured to introduce and circulate the low temperature water from the outside of the reaction vessel 10 to discharge the high temperature water from the outside of the reaction vessel 10.
  • the temperature of the water angle and the coolant 50 surface may be 500 ° C. or less.
  • the cooling jacket 50 is installed at the center of the reaction chamber 11, the gas outlet 23 is formed at the center on the base plate 21, and the gas inlet 22 is the base plate 21 at the gas outlet 23. Spaced apart in the radial direction of the). Therefore, the gas passage 51 is connected to the gas outlet 23 to allow the gas to be discharged to the outside of the reaction chamber 11 after the reaction is carried out in the reaction chamber 11.
  • FIG. 2 is an exploded perspective view of the upper part of the reaction vessel and the angled jacket in FIG. 1
  • FIG. 3 is a partial cross-sectional view of the angled jacket installed on the base plate. 1 to 3.
  • the cooling jacket 50 has a cooling water inlet 53 and a water angle outlet 54.
  • An inner pipe 55 and an outer pipe 56 forming the gas passage 51 and the coolant passage 52 are included.
  • the coolant inlet 53 is installed in the reaction vessel 10 and is connected to the cooling water passage 52 to inject the low temperature cooling water from the outside of the reaction vessel 10.
  • the cooling water circulating in the cooling water passage 52 engraves the surface of the cooling jacket 50 so that no polysilicon is deposited and the silicon rod 40 does not melt.
  • the coolant outlet 54 is connected to the coolant water passage 52 to discharge hot coolant water from the inside of the reaction machine 10.
  • This embodiment is provided with two coolant inlets 53 and two angled outlets 54, respectively, to enable the inlet and outlet of the coolant even in an emergency.
  • the inner pipe 55 and the outer pipe 56 are arranged in a double structure to form a gas passage 51 inward of the inner pipe 55, and inside. Cooling water passages 52 are formed outside the gas passages 51 at intervals between the external pipes 55 and 56.
  • the counterunggi 10 is provided with the first flange 15 on the outer side of the mounting hole 14 penetrating the upper side of the twisting structure.
  • the angle jacket 50 has a second flange 57 fixed to the angle water inlet 53 and the cooling water outlet 54.
  • cooling water inlet 53 and the cooling water outlet 54 are shown separated from the second flange 57, but are inserted and fixed to the second flange 57 to form an integrated body.
  • the angle jacket 50 is inserted into the reaction vessel 10 through the installation hole 14 so as to maintain a part of the angle water inlet 53 and the cooling water discharge port 54 protruding out of the installation hole 14.
  • the second flange 57 is disposed on the first flange 15 and is fastened to the first flange 15 by a fastening member while closing the installation hole 14.
  • the fastening member is provided with a bolt 16 and a nut 17 and fastened to each other through fasteners 15 ⁇ and 571 of the first and second flanges 15 and 57.
  • the gas G after the reaction in the reaction chamber 11 may directly flow into the gas passage 51 from the upper end of the silicon rod 40 and be discharged to the gas outlet 23. That is, after reaction, the gas G does not flow influence on the source gas in the reaction chamber 11.
  • the cooling jacket 50 is installed in the base plate 21 via the gas 60.
  • the gasket 60 communicates the gas passage 51 and the gas outlet 23, and communicates the communication with the inside of the reaction chamber 11. Is blocked.
  • the gas G passing through the gas passage 51 and the gas outlet 23 is supplied into the reaction chamber 11 so as not to affect the flow of the raw material gas subjected to chemical vapor deposition reaction. That is, turbulence is not formed in the reaction chamber 11 by the reaction gas G, and the laminar flow LF may be effectively formed.
  • the lower end of the cooling jacket 50 forms a concave groove 501
  • the gasket 60 is coupled to the concave groove 501 on one side and supported by the base plate 21 on the other side.
  • the concave groove 501 is formed in a trapezoidal structure with a narrow upper portion and a wide lower portion, and can prevent separation of the gasket 60 when inserting the angled jacket 50 into the reaction machine 10.
  • the gasket 60 may be formed of a polytetraf luoroethylene having heat resistance.
  • FIG. 5 is a graph showing the deviation of the surface temperature between the silicon rods by position in the prior art and in one embodiment. Referring to Figure 5, the silicon rods of the prior art are centered in the reaction vessel. Surface temperature deviation (a) of about 70 ° C in the middle and outside.
  • the silicon rods 40 of one embodiment are central in the reaction vessel 10.
  • the surface temperature deviation (b) of the silicon rods 40 can be lower than the surface temperature deviation (a) of the prior art.
  • the surface silverness of the silicon rods 40 is uniform, so that the quality of the polysilicon may be improved.
  • the amount of heat generated can be lowered and surface surface silver can be lowered as compared with the prior art.
  • FIG. 6 is a graph showing power consumption in the prior art
  • Figure 7 is a graph showing the power consumption in one embodiment.
  • prior art silicon rods consume power at 49% radiation, 31% convection, 16% gas heating, and 4% contact loss.
  • the silicon rods 40 of one embodiment are radiative 63 convection. Power consumption is 22%, gas heating 9 and contact loss 6%. That is, one embodiment can reduce the heat dissipation due to convection, compared to the prior art, thereby lowering the electric unit.
  • FIG. 8 is a state diagram in which the source gas forms laminar flow by simulation in the reaction period of FIG. 1.
  • the raw material gas G11 is introduced from both sides of the lower side of the reaction vessel 10, and the gas G12 is discharged after the reaction from the center by using the angle ash 3 ⁇ 4 50, so that the reaction gas 10 is entirely inside the reaction vessel 10.
  • the variation of the gas velocity by the source gas G11 can be reduced.
  • the source gas forms the laminar flow which flows in a fixed direction in the reactor 10 inside. Since the gas velocity deviation is small and laminar flow is formed, the diameter variation of the silicon rod 40 can be reduced.
  • Comparative Example 1 introduces the source gas G21 at the lower center and both sides of the reaction vessel 80, and discharges the gas G22 after the reaction at the top of the reactor 80.
  • Comparative Example 2 introduces more raw material gas G31 in the center than the lower both sides of the reaction vessel 80 (increasing the gas inlet diameter), and discharges the gas G32 after the reaction from the upper portion of the reaction vessel 80.
  • Comparative Example 3 introduces more raw material gas G41 at the center than the lower both sides of the reaction vessel 80 (increasing the number of gas inlets), and the gas after the reaction at the upper portion of the reaction vessel 80 ( Eject G42).
  • Comparative Examples 1, 2, and 3 have a large variation in the velocity of the gas due to the source gases G21, G31, and G41 at the lower and upper portions of the reaction vessel 80, and the source gases G21 and G31 in the upper and lower portions, respectively. , G41). Since the gas velocity deviation is large and turbulence is formed, the diameter variation of the silicon rod may be increased.
  • FIG. 14 and FIG. 15 are state diagrams in which the source gas forms turbulence by simulation in the reaction periods of Comparative Examples 4, 5. 6, and 7.
  • FIG. 12 Comparative Example 4 introduces the raw material gas G51 to the central side of the reaction vessel 90, and discharges the gas G52 after the reaction to the outer side of the reaction vessel 90.
  • Comparative Example 5 is the raw material to the outer side of the half-woong 90
  • the gas G61 is introduced and the gas G62 is discharged after the reaction to the central side of the reaction vessel 90.
  • Comparative Example 6 introduces source gas G71 to the central side of the reaction vessel 90. After the reaction, the gas G72 is discharged to the upper portion of the reaction vessel 90.
  • the raw material gas G81 was introduced to the outer side of the reaction machine 90.
  • the gas G82 is discharged after the reaction is conducted to the lower portion of the reaction vessel 90 using the angled jacket 50.
  • Comparative Examples 4, 5. 6, and 7 seem to form gas flow in one direction near the source gas inlet (gas inlet), but the gas is not easy to be discharged after reaction, thereby forming turbulence everywhere. Turbulence can increase the diameter deviation of the silicon rods.
  • One embodiment may increase the yield of polysilicon by making the upper and lower diameters uniform and the surface temperature of the silicon rod 40 uniform in the silicon rod 40.
  • One embodiment also improves the quality of polysilicon by reducing hot spots. Lower gas flow rates and lower power consumption can lead to lower electricity levels (a weaker electricity unit can lower the cost of polysilicon sales).
  • FIG. 16 is a state diagram illustrating the formation of a hot spot within the reaction period of the comparative example. Referring to FIG. When one half-unggi of the comparative examples 1-7 is applied to the polysilicon manufacturing apparatus, the state in which the hot spot HS1 was formed in the half-unggi 101 is shown.
  • FIG. 17 is a state diagram illustrating that a hot spot is formed within the reaction period of FIG. 1. Referring to Figure 17, when the semi-unggi 10 used in the polysilicon manufacturing apparatus according to an embodiment of the present invention is applied. The state where the hot spot HS2 is formed in the reaction machine 10 is shown.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Silicon Compounds (AREA)

Abstract

Selon un mode de réalisation de la présente invention, un appareil de fabrication de polysilicium comprend : un réacteur disposé sur une plaque de base pour former une chambre de réaction; une paire de bornes d'électrode montée sur la plaque de base et s'étendant vers l'intérieur de la chambre de réaction; des filaments en tige montés sur les bornes d'électrode à l'intérieur de la chambre de réaction et reliés, au niveau des extrémités supérieures correspondantes, les uns aux autres via un pont en tige de telle sorte qu'une tige de silicium est formée par mise en oeuvre d'un procédé de dépôt chimique en phase vapeur à l'aide d'un gaz source introduit à travers une entrée de gaz; et une chemise de refroidissement introduite dans un trou traversant formé dans la partie supérieure du réacteur et supportée par la plaque de base. La chemise de refroidissement présente un passage de gaz, qui est relié à une sortie de gaz formée dans la plaque de base, pour évacuer le gaz après la réaction et un passage de réfrigérant formé à l'extérieur du passage de gaz pour recevoir un réfrigérant à basse température à partir de l'extérieur du réacteur via le passage de réfrigérant, faire circuler le réfrigérant à travers le passage de réfrigérant et évacuer le réfrigérant à haute température vers l'extérieur du réacteur.
PCT/KR2016/010106 2015-09-08 2016-09-08 Appareil de fabrication de polysilicium Ceased WO2017043892A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US15/750,251 US10293326B2 (en) 2015-09-08 2016-09-08 Polysilicon manufacturing apparatus
MYPI2018700588A MY185420A (en) 2015-09-08 2016-09-08 Polysilicon manufacturing apparatus
CN201680052170.1A CN108025918B (zh) 2015-09-08 2016-09-08 多晶硅制造装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2015-0126701 2015-09-08
KR20150126701 2015-09-08
KR1020160102394A KR101895538B1 (ko) 2015-09-08 2016-08-11 폴리실리콘 제조 장치
KR10-2016-0102394 2016-08-11

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WO2017043892A1 true WO2017043892A1 (fr) 2017-03-16

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WO (1) WO2017043892A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3640204A4 (fr) * 2017-06-16 2021-04-07 Tokuyama Corporation Procédé de production de silicium polycristallin

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100117492A (ko) * 2009-04-24 2010-11-03 비달 레반칼 개량된 폴리실리콘의 화학 증착 프로세스
US20110126761A1 (en) * 2009-12-02 2011-06-02 Woongjin polysilicon Co., Ltd. Cvd reactor with energy efficient thermal-radiation shield
KR20130019183A (ko) * 2011-08-16 2013-02-26 (주)세미머티리얼즈 반응가스 흐름을 개선한 폴리실리콘 제조장치
KR20130019568A (ko) * 2011-08-17 2013-02-27 (주)세미머티리얼즈 폴리실리콘 제조장치 및 폴리실리콘 제조방법
KR20140136985A (ko) * 2012-03-14 2014-12-01 센트로섬 포토볼타익스 유에스에이, 인크. 트리클로로실란의 제조

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100117492A (ko) * 2009-04-24 2010-11-03 비달 레반칼 개량된 폴리실리콘의 화학 증착 프로세스
US20110126761A1 (en) * 2009-12-02 2011-06-02 Woongjin polysilicon Co., Ltd. Cvd reactor with energy efficient thermal-radiation shield
KR20130019183A (ko) * 2011-08-16 2013-02-26 (주)세미머티리얼즈 반응가스 흐름을 개선한 폴리실리콘 제조장치
KR20130019568A (ko) * 2011-08-17 2013-02-27 (주)세미머티리얼즈 폴리실리콘 제조장치 및 폴리실리콘 제조방법
KR20140136985A (ko) * 2012-03-14 2014-12-01 센트로섬 포토볼타익스 유에스에이, 인크. 트리클로로실란의 제조

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3640204A4 (fr) * 2017-06-16 2021-04-07 Tokuyama Corporation Procédé de production de silicium polycristallin
US11512001B2 (en) 2017-06-16 2022-11-29 Tokuyama Corporation Method for producing polysilicon

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