[go: up one dir, main page]

WO2016208518A1 - Composition pour former un film sous-couche de réserve, film sous-couche de réserve et procédé de production de substrat à motifs - Google Patents

Composition pour former un film sous-couche de réserve, film sous-couche de réserve et procédé de production de substrat à motifs Download PDF

Info

Publication number
WO2016208518A1
WO2016208518A1 PCT/JP2016/068191 JP2016068191W WO2016208518A1 WO 2016208518 A1 WO2016208518 A1 WO 2016208518A1 JP 2016068191 W JP2016068191 W JP 2016068191W WO 2016208518 A1 WO2016208518 A1 WO 2016208518A1
Authority
WO
WIPO (PCT)
Prior art keywords
underlayer film
group
resist underlayer
compound
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2016/068191
Other languages
English (en)
Japanese (ja)
Inventor
真吾 成瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Publication of WO2016208518A1 publication Critical patent/WO2016208518A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to a resist underlayer film forming composition, a resist underlayer film, and a method for producing a patterned substrate.
  • a multilayer resist process is used to obtain a high degree of integration.
  • a resist underlayer film forming composition is applied to one side of a substrate to form a resist underlayer film, and a resist composition is applied to the opposite side of the resist underlayer film from the substrate.
  • a resist film is formed.
  • the resist film is exposed through a mask pattern or the like, and developed with a developer to form a resist pattern.
  • the resist underlayer film is dry-etched using the resist pattern as a mask, and the substrate is further etched using the obtained resist underlayer film pattern as a mask, thereby forming a desired pattern on the substrate and obtaining a patterned substrate. Can do.
  • the composition for forming a resist underlayer film is required to sufficiently fill these trenches and to form a resist underlayer film having high flatness.
  • the resist underlayer film forming composition is required to be able to be applied uniformly on the substrate, and is particularly formed when an intermediate layer such as a silicon-containing film is formed on the resist underlayer film in a multilayer resist process.
  • the resist underlayer film is required to be able to uniformly apply a polysiloxane composition or the like on the surface thereof and to be excellent in surface coatability.
  • the present invention has been made based on the circumstances as described above, and its object is to provide a resist underlayer film forming composition capable of forming a resist underlayer film having excellent flatness and surface coatability, a resist underlayer film, and patterning. Another object of the present invention is to provide a method for manufacturing a substrate.
  • the invention made to solve the above problems includes a first compound represented by the following formula (1-1) or the following formula (1-2) (hereinafter also referred to as “[A] compound”), and the above [ A] Composition for forming a resist underlayer film comprising a second compound having an aromatic ring other than the compound (hereinafter also referred to as “[B] compound”) and a solvent (hereinafter also referred to as “[C] solvent”). It is.
  • R 41 and R 42 are each independently a hydrogen atom or a fluorinated alkyl group.
  • R 51 and R 52 are each independently 1 to 20 carbon atoms.
  • Z is a divalent linking group, a and b are each independently an integer of 1 to 100.
  • R 41 , R 42 , R 51 and R 52 are each In a plurality of cases, the plurality of R 41 may be the same or different, the plurality of R 42 may be the same or different, the plurality of R 51 may be the same or different, and the plurality of R 52 may be the same. May be different.
  • L 1 is a divalent linking group.
  • R 1 ′ is a hydrogen atom, a fluorinated alkyl group, or a group represented by the following Formula (1-2-R).
  • A is a hydroxy group, a fluorinated alkoxy group or a group represented by the following formula (1-2-A), and f is an integer of 1 to 100.
  • R 81 represents a hydrogen atom or a fluorinated alkyl group.
  • * 1 ′ represents a site bonded to the oxygen atom farthest from A in the formula (1-2).
  • L 2 is a divalent linking group containing no fluorine atom.
  • R 1 ′′ is a hydrogen atom or a fluorinated alkyl group.
  • A is the above formula.
  • Another invention made to solve the above problems is a resist underlayer film formed from the resist underlayer film forming composition.
  • Still another invention made in order to solve the above-mentioned problems is the step of coating the resist underlayer film forming composition on one surface side of the substrate, and the resist underlayer film formed by the coating step.
  • a method for producing a patterned substrate comprising: a step of forming a resist pattern on the side opposite to the substrate; and a step of etching using the resist pattern as a mask.
  • the “hydrocarbon group” includes a chain hydrocarbon group, an alicyclic hydrocarbon group, and an aromatic hydrocarbon group.
  • the “hydrocarbon group” may be a saturated hydrocarbon group or an unsaturated hydrocarbon group.
  • the “chain hydrocarbon group” refers to a hydrocarbon group that does not include a cyclic structure but includes only a chain structure, and includes both a linear hydrocarbon group and a branched hydrocarbon group.
  • alicyclic hydrocarbon group refers to a hydrocarbon group that includes only an alicyclic structure as a ring structure and does not include an aromatic ring structure, and includes a monocyclic alicyclic hydrocarbon group and a polycyclic alicyclic group. Includes both hydrocarbon groups.
  • “Aromatic hydrocarbon group” refers to a hydrocarbon group containing an aromatic ring structure as a ring structure. However, it is not necessary to be composed only of an aromatic ring structure, and a part thereof may include a chain structure or an alicyclic structure. “Number of ring members” means the number of atoms constituting the ring of an aromatic ring structure, aromatic heterocyclic structure, alicyclic structure and aliphatic heterocyclic structure. In the case of a polycyclic ring structure, this polycyclic ring The number of atoms to be played.
  • the composition for forming a resist underlayer film of the present invention it is possible to form a resist underlayer film having excellent flatness and excellent surface coatability. Since the resist underlayer film of the present invention is formed from the resist underlayer film forming composition, it is excellent in flatness and surface coating property. According to the method for producing a patterned substrate of the present invention, a substrate having an excellent pattern shape can be obtained by using the resist underlayer film. Therefore, these can be suitably used for manufacturing semiconductor devices and the like that are expected to be further miniaturized in the future.
  • the resist underlayer film forming composition contains a [A] compound, a [B] compound, and a [C] solvent.
  • the resist underlayer film forming composition may contain a [D] acid generator and / or [E] cross-linking agent as a suitable component, and other optional components as long as the effects of the present invention are not impaired. May be contained.
  • the composition for forming a resist underlayer film includes a [A] compound, a [B] compound, and a [C] solvent, thereby forming a resist underlayer film having excellent flatness and excellent surface coating properties. it can.
  • the reason why the composition for forming a resist underlayer film has the above-described configuration provides the above effect is not necessarily clear, it can be inferred as follows, for example. That is, it is considered that the [A] compound has a hydroxy group and has the specific structure, whereby the affinity between the [B] compound having an aromatic ring and the substrate can be increased.
  • the resist underlayer film forming composition can be sufficiently embedded even on a substrate having a trench or the like, so that the resist underlayer film has excellent flatness.
  • the formed resist underlayer film has a hydroxy group and [A] compound having the specific structure, and therefore has excellent surface coatability. Therefore, in the multilayer resist process, it becomes easy to form an intermediate layer by applying a polysiloxane composition or the like on the resist underlayer film.
  • the compound [A] is a compound represented by the following formula (1-1) or the following formula (1-2) (hereinafter, a compound represented by the following formula (1-1) is also referred to as “[A1] compound”).
  • the compound represented by the following formula (1-2) is also referred to as “[A2] compound”).
  • R 41 and R 42 are each independently a hydrogen atom or a fluorinated alkyl group.
  • R 51 and R 52 are each independently a monovalent hydrocarbon group having 1 to 20 carbon atoms.
  • Z is a divalent linking group.
  • a and b are each independently an integer of 1 to 100.
  • the carbon number of the fluorinated alkyl group represented by R 41 and R 42 is, for example, 1 to 20, and preferably 1 to 10.
  • the fluorinated alkyl group include a fluoromethyl group, a difluoromethyl group, a trifluoromethyl group, a difluoroethyl group, a trifluoroethyl group, a trifluoropropyl group, a pentafluoropropyl group, a pentafluorobutyl group, a heptafluorobutyl group, Nonafluoropentyl group etc. are mentioned.
  • R 41 and R 42 are preferably a fluorinated alkyl group, more preferably a fluorinated alkyl group having 1 to 5 carbon atoms, and a perfluoroalkylmethyl group from the viewpoint of further improving the flatness and surface coatability of the resist underlayer film.
  • a fluorinated alkyl group more preferably a fluorinated alkyl group having 1 to 5 carbon atoms, and a perfluoroalkylmethyl group from the viewpoint of further improving the flatness and surface coatability of the resist underlayer film.
  • a pentafluoropropyl group is particularly preferable.
  • Examples of the monovalent hydrocarbon group having 1 to 20 carbon atoms represented by R 51 and R 52 include monovalent chain hydrocarbon groups having 1 to 20 carbon atoms and monovalent fats having 3 to 20 carbon atoms. Examples thereof include a cyclic hydrocarbon group and a monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms.
  • Examples of the monovalent chain hydrocarbon group having 1 to 20 carbon atoms include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, sec-butyl group, t -An alkyl group such as a butyl group; An alkenyl group such as an ethenyl group, a propenyl group, a butenyl group; Examples thereof include alkynyl groups such as ethynyl group, propynyl group and butynyl group.
  • Examples of the monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms include cycloalkyl groups such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group; A cycloalkenyl group such as a cyclobutenyl group, a cyclopentenyl group, a cyclohexenyl group; Examples thereof include a bridged ring hydrocarbon group such as a norbornyl group, an adamantyl group, a norbornenyl group, a tricyclodecenyl group, and a tetracyclododecenyl group.
  • Examples of the monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms include aryl groups such as a phenyl group, a tolyl group, a xylyl group, a naphthyl group, and an anthryl group; Aralkyl groups such as benzyl group, phenethyl group, cumyl group, naphthylmethyl group; Examples include ethenylbenzyl group and ethynylbenzyl group.
  • a chain hydrocarbon group is preferable, an alkyl group is more preferable, and a methyl group and an ethyl group are further preferable from the viewpoint of further improving the flatness and surface coatability of the resist underlayer film.
  • Examples of the divalent linking group represented by Z include a divalent organic group having 1 to 50 carbon atoms. “Organic group” refers to a group containing at least one carbon atom.
  • Examples of the divalent organic group having 1 to 50 carbon atoms include a divalent hydrocarbon group having 1 to 50 carbon atoms and a divalent heteroatom-containing group between one or more carbons of the hydrocarbon group. And a group obtained by substituting a part or all of the hydrogen atoms of the group (a), the hydrocarbon group and the group (a) with a monovalent heteroatom-containing group.
  • R ′ is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms.
  • Examples of the monovalent heteroatom-containing group include a chlorine atom, a bromine atom, an iodine atom, a hydroxy group, a carboxy group, a cyano group, an amino group, and a sulfanyl group.
  • Z is preferably free of fluorine atoms from the viewpoint of further improving the flatness and surface coatability of the resist underlayer film.
  • Z is preferably an organic group containing no fluorine atom having 1 to 20 carbon atoms, more preferably a hydrocarbon group having 1 to 20 carbon atoms, still more preferably a hydrocarbon group having 1 to 10 carbon atoms, and 1 to 1 carbon atoms.
  • Ten alkanediyl groups are particularly preferred, with ethanediyl and neopentanediyl groups being even more preferred.
  • a and b 1 is preferable.
  • 40 is preferable, 30 is more preferable, 20 is further preferable, 10 is particularly preferable, and 8 is more particularly preferable.
  • the lower limit of a + b is preferably 1.
  • 150 is preferable, 40 is more preferable, 30 is more preferable, 20 is particularly preferable, 10 is further particularly preferable, and 8 is most preferable.
  • the compound preferably has an oxyalkylene unit other than the oxyethylene unit.
  • the oxyalkylene unit is preferably a substituted or unsubstituted oxypropylene unit.
  • the compound [A1] has such an oxyalkylene unit, whereby the flatness and surface coatability of the resist underlayer film can be further improved.
  • x1 and y1 are each independently an integer of 1 to 6.
  • x2 and y2 are each independently an integer of 1 to 20.
  • x3 is an integer of 1-8.
  • z3 is an integer of 1 to 20.
  • the lower limit of x1 + y1 is preferably 3, more preferably 4, and even more preferably 5.
  • the lower limit of x2 + y2 is preferably 5, more preferably 10, and even more preferably 15.
  • the upper limit of x2 + y2 is preferably 35, more preferably 30, and even more preferably 25.
  • L 1 is a divalent linking group.
  • R 1 ′ is a hydrogen atom, a fluorinated alkyl group, or a group represented by the following formula (1-2-R).
  • A is a hydroxy group, a fluorinated alkoxy group or a group represented by the following formula (1-2-A).
  • f is an integer of 1 to 100.
  • R 81 represents a hydrogen atom or a fluorinated alkyl group.
  • * 1 ′ represents a site bonded to the oxygen atom farthest from A in the above formula (1-2).
  • L 2 is a divalent linking group.
  • R 1 ′′ is a hydrogen atom or a fluorinated alkyl group.
  • * A represents a site bonded to the carbon atom in —CH 2 C (OH) CH 2 — that is farthest from R 1 ′ in the above formula (1-2).
  • Examples of the divalent linking group of L 1 in the above formula (1-2) and L 2 in the above formula (1-2-A) are those exemplified as the divalent linking group of Z in the above formula (1-1). And the like groups.
  • L 1 and L 2 preferably contain no fluorine atom from the viewpoint of further improving the flatness and surface coatability of the resist underlayer film.
  • L 1 and L 2 are preferably a divalent group represented by the following formula (1 ′), a divalent aromatic hydrocarbon group and a divalent group containing a carbon-carbon triple bond.
  • R 2 to R 7 are each independently a hydrogen atom, a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 6 carbon atoms.
  • n is an integer of 0-4. ** is an oxygen atom which 'R 1 side of the oxygen atom or the formula (1-2-A)' R 1 of the oxygen atoms L 1 in the formula (1-2) binds "binds The binding site is indicated.
  • divalent aromatic hydrocarbon group examples include a group obtained by removing two hydrogen atoms from an aromatic hydrocarbon having 6 to 20 carbon atoms.
  • alkanediylarenediylalkanediyl groups are preferred, and methanediylbenzenediylmethanediyl groups are more preferred.
  • Examples of the divalent group containing a carbon-carbon triple bond include a group obtained by removing two hydrogen atoms from a compound containing a carbon-carbon triple bond having 2 to 20 carbon atoms.
  • an alkanediyloxyalkynediyloxyalkanediyl group is preferable, and an ethanediyloxybutynediyloxyethanediyl group is more preferable.
  • Examples of the fluorinated alkyl group represented by R 1 ′ include groups similar to those exemplified as the same groups for R 41 and R 42 described above. Among these, from the viewpoint of further improving the flatness and surface coatability of the resist underlayer film, a fluorinated alkyl group having 1 to 5 carbon atoms is preferable, a perfluoroalkyl group having 1 to 5 carbon atoms is more preferable, and pentafluoro A propyl group is more preferred.
  • the number of carbon atoms of the fluorinated alkoxy group represented by A is, for example, 1 to 20, and preferably 1 to 10.
  • the fluorinated alkoxy group include a fluoromethoxy group, a difluoromethoxy group, a trifluoromethoxy group, a trifluoroethoxy group, a pentafluoroethoxy group, a heptafluoropropoxy group, a nonafluorobutoxy group, and an undecafluoropentyloxy group. It is done.
  • a pentafluoropropoxy group is preferable from the viewpoint of further improving the flatness and surface coatability of the resist underlayer film.
  • R 81 in the above formula (1-2-R) is preferably a hydrogen atom or a pentafluoropropyl group from the viewpoint of further improving the flatness and surface coatability of the resist underlayer film.
  • R 1 ′′ in the above formula (1-2-A) is preferably a hydrogen atom or a pentafluoropropyl group from the viewpoint of further improving the flatness and surface coatability of the resist underlayer film.
  • the lower limit of f in the above formula (1-2) is preferably 2, more preferably 3, and even more preferably 4.
  • 80 is preferable, 50 is more preferable, and 30 is more preferable.
  • the compound preferably has an oxyalkylene unit other than the oxyethylene unit.
  • the oxyalkylene unit is preferably a substituted or unsubstituted oxypropylene unit.
  • Suitable [A2] compounds include compounds represented by the following formulas (s-2-1) to (s-2-7).
  • * s1 represents a site bonded to the oxygen atom farthest from A s1 in the above formula (s-2-1).
  • * As1 represents a site bonded to the carbon atom farthest from R s1 in the above formula (s-2-1).
  • * s2 indicates a site that binds to an oxygen atom which is farthest from the A s2 in the above formula (s-2-2).
  • * As2 represents a site bonded to the carbon atom farthest from R s2 in the above formula (s-2-2).
  • * s3 shows a site that binds to an oxygen atom which is farthest from the A s3 in the above formula (s-2-3).
  • * As3 represents a site bonded to the carbon atom farthest from R s3 in the above formula (s-2-3).
  • * s4 indicates a site bonded to the oxygen atom which is farthest from the A s4 in the above formula (s-2-4).
  • * As4 represents a site bonded to the carbon atom farthest from R s4 in the above formula (s-2-4).
  • * s6 represents a site bonded to the oxygen atom farthest from A s6 in the above formula (s-2-6).
  • * As6 represents a site bonded to the carbon atom farthest from R s6 in the above formula (s-2-6).
  • * s7 represents a site bonded to the oxygen atom farthest from A s7 in the above formula (s-2-7).
  • * As7 represents a site bonded to the carbon atom farthest from R s7 in the above formula (s-2-7).
  • the [A] compound is preferably the [A1] compound.
  • the compound [A] may be synthesized according to a known method, or a commercially available product may be used.
  • the compound [A1] can be obtained by using, for example, a diol that gives Z and an oxetane compound.
  • the compound [A2] can be synthesized, for example, by reacting a diol that gives L 1 with ethylene glycol diglycidyl ether in the presence of an acid catalyst such as paratoluenesulfonic acid.
  • an acid catalyst such as paratoluenesulfonic acid.
  • a fluorinating agent such as 2,2,3,3,3-pentafluoropropyl tosylate and a solvent such as tetrahydrofuran in the presence of a strong base such as t-butoxy potassium are added to the compound thus synthesized.
  • Fluorine atoms can be introduced by reacting in.
  • the lower limit of the HLB value of the [A] compound is preferably 2, more preferably 4, more preferably 6, and particularly preferably 8.
  • the upper limit of the HLB value is preferably 19, more preferably 17, more preferably 15, and particularly preferably 13.
  • the lower limit of the molecular weight of the [A] compound is preferably 100, more preferably 200, and even more preferably 300.
  • the upper limit of the molecular weight is preferably 20,000, more preferably 10,000, and further preferably 5,000.
  • the molecular weight of the [A] compound is, for example, a polystyrene-equivalent weight average molecular weight (Mw) by gel permeation chromatography (GPC).
  • the weight average molecular weight (Mw) and the number average molecular weight (Mn) are GPC columns (two "G2000HXL", one "G3000HXL” and one “G4000HXL” from Tosoh Corporation), and the flow rate: It is measured by gel permeation chromatography (GPC) using monodisperse polystyrene as a standard under the analysis conditions of 1.0 mL / min, elution solvent: tetrahydrofuran, column temperature: 40 ° C.
  • the lower limit of the content of the [A] compound with respect to 100 parts by mass of the [B] compound is preferably 0.01 parts by mass, more preferably 0.02 parts by mass, further preferably 0.05 parts by mass, and 0.1 parts by mass. Part is particularly preferred.
  • the upper limit of the content is preferably 10 parts by mass, more preferably 5 parts by mass, further preferably 3 parts by mass, and particularly preferably 1.5 parts by mass.
  • a compound can be used individually by 1 type or in combination of 2 or more types.
  • the [B] compound is a compound having an aromatic ring other than the [A] compound.
  • any compound having an aromatic ring can be used without any particular limitation.
  • a compound can be used individually by 1 type or in combination of 2 or more types.
  • aromatic ring examples include aromatic carbocycles such as a benzene ring, naphthalene ring, anthracene ring, indene ring, pyrene ring, fluorenylidene biphenyl ring, and fluorenylidene binaphthalene ring;
  • aromatic heterocycle such as a furan ring, a pyrrole ring, a thiophene ring, a phosphorol ring, a pyrazole ring, an oxazole ring, an isoxazole ring, a thiazole ring, a pyridine ring, a pyrazine ring, a pyrimidine ring, a pyridazine ring, and a triazine ring.
  • aromatic carbocycles are preferred.
  • Examples of the compound include resins having an aromatic ring in the main chain, resins such as a resin having no aromatic ring in the main chain and having an aromatic ring in the side chain; and containing an aromatic ring having a molecular weight of 100 to 3,000 Compounds and the like.
  • “resin” refers to a compound having two or more structural units.
  • “Aromatic ring-containing compound” refers to a compound having one structural unit.
  • the “main chain” refers to the longest chain composed of atoms in the resin.
  • the “side chain” means a chain other than the longest chain composed of atoms in the resin.
  • Examples of the resin include polycondensation compounds and compounds obtained by reactions other than polycondensation.
  • the resin examples include novolak resin, resol resin, styrene resin, acenaphthylene resin, indene resin, polyarylene resin, triazine resin, calixarene resin, fullerene resin and the like.
  • the novolac resin is a resin obtained by reacting a phenolic compound with an aldehyde or a divinyl compound using an acidic catalyst. A plurality of phenolic compounds and aldehydes or divinyl compounds may be mixed and reacted.
  • phenolic compound examples include phenol, cresol, xylenol, resorcinol, bisphenol A, p-tert-butylphenol, p-octylphenol, 9,9-bis (4-hydroxyphenyl) fluorene, 9,9-bis (4-hydroxy).
  • Phenols such as phenyl) fluorene; naphthols such as ⁇ -naphthol, ⁇ -naphthol, 1,5-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, 9,9-bis (6-hydroxynaphthyl) fluorene; 9- Antrols such as Antrol; Examples include pyrenols such as 1-hydroxypyrene and 2-hydroxypyrene.
  • aldehydes examples include aldehydes such as formaldehyde, benzaldehyde, 1-naphthaldehyde, 2-naphthaldehyde, 1-formylpyrene; Examples include aldehyde sources such as paraformaldehyde and trioxane.
  • divinyl compounds examples include divinylbenzene, dicyclopentadiene, tetrahydroindene, 4-vinylcyclohexene, 5-vinylnoborn-2-ene, divinylpyrene, limonene, and 5-vinylnorbornadiene.
  • the novolak resin examples include a resin having a structural unit derived from dihydroxynaphthalene and formaldehyde, a resin having a structural unit derived from fluorene bisphenol and formaldehyde, a resin having a structural unit derived from fluorene bisnaphthol and formaldehyde, hydroxypyrene, and formaldehyde A resin having a structural unit derived from the above, a resin having a structural unit derived from a phenol compound and formylpyrene, a group in which some or all of the hydrogen atoms of the phenolic hydroxyl group of these resins are substituted with a propargyl group, etc. .
  • the resole resin is a resin obtained by reacting a phenolic compound with aldehydes using an alkaline catalyst.
  • the styrene resin is a resin having a structural unit derived from a compound having an aromatic ring and a polymerizable carbon-carbon double bond.
  • the styrene resin may have a structural unit derived from an acrylic monomer, vinyl ether or the like in addition to the above structural unit.
  • styrene resin examples include polystyrene, polyvinyl naphthalene, polyhydroxystyrene, polyphenyl (meth) acrylate, and a combination of these.
  • the acenaphthylene resin is a resin having a structural unit derived from a compound having an acenaphthylene skeleton.
  • An indene resin is a resin having a structural unit derived from a compound having an indene skeleton.
  • a polyarylene resin is a resin having a structural unit derived from a compound containing an arylene skeleton.
  • the arylene skeleton include a phenylene skeleton, a naphthylene skeleton, and a biphenylene skeleton.
  • polyarylene resin examples include polyarylene ether, polyarylene sulfide, polyarylene ether sulfone, polyarylene ether ketone, a resin having a structural unit containing a biphenylene skeleton and a structural unit derived from a compound containing an acenaphthylene skeleton. .
  • the polyarylene resin is preferably a resin having a biphenyl skeleton from the viewpoint of further improving the flatness and surface coatability of the resist underlayer film, and includes a structural unit containing a biphenylene skeleton and a structural unit derived from a compound containing an acenaphthylene skeleton.
  • the resin having is more preferable.
  • the triazine resin is a resin having a structural unit derived from a compound having a triazine skeleton.
  • Examples of the compound having a triazine skeleton include melamine compounds and cyanuric acid compounds.
  • the Mw of the [B] compound is preferably more than 2,000, and 3,000 The above is more preferable, and 5,000 or more is more preferable. Moreover, as said Mw, 100,000 or less are preferable, 50,000 or less are more preferable, and 30,000 or less are further more preferable.
  • the lower limit of Mw / Mn of the [B] compound is usually 1 and preferably 1.1.
  • the upper limit of the Mw / Mn is preferably 5, more preferably 3, and even more preferably 2.
  • the calixarene resin is a cyclic oligomer in which a plurality of aromatic rings to which a hydroxy group is bonded are bonded via a hydrocarbon group, or a part or all of hydrogen atoms of the hydroxy group, aromatic ring and hydrocarbon group are substituted. It is a thing.
  • the lower limit of the molecular weight of the calixarene resin is preferably 500, more preferably 700, and even more preferably 1,000 from the viewpoint of further improving the flatness of the resist underlayer film.
  • the upper limit of the molecular weight is preferably 5,000, more preferably 3,000, and further preferably 1,500.
  • aromatic ring-containing compound examples include a compound having a fluorene bisphenol skeleton, a compound having a spiroindene skeleton, a compound having a torquesen skeleton, and a compound having a triphenylbenzene skeleton.
  • the lower limit of the molecular weight of the aromatic ring-containing compound is preferably 300, more preferably 400, even more preferably 500, and particularly preferably 600.
  • the upper limit of the molecular weight is preferably 2,500, more preferably 2,000, and further preferably 1,500.
  • the lower limit of the content of the compound is preferably 80% by mass and more preferably 85% by mass with respect to the total (total solid content) of components other than the solvent [C] in the resist underlayer film forming composition.
  • a compound can be used individually by 1 type or in combination of 2 or more types.
  • [[B] Compound Synthesis Method] The compound [B] may be synthesized according to a known method, or a commercially available product may be used.
  • the solvent is not particularly limited as long as it can dissolve or disperse the [A] compound, the [B] compound, and optional components contained as necessary.
  • a solvent can be used individually by 1 type or in combination of 2 or more types.
  • solvents examples include alcohol solvents, ketone solvents, amide solvents, ether solvents, ester solvents, and the like.
  • a solvent can be used individually by 1 type or in combination of 2 or more types.
  • ether solvents, ketone solvents and ester solvents are preferred, polyhydric alcohol partial ether solvents, polyhydric alcohol partial ether acetate solvents, cyclic ketone solvents and carboxylic ester solvents are more preferred. More preferred are propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone and ethyl lactate.
  • the acid generator is a component that generates an acid by the action of heat or light and promotes crosslinking of the [B] compound.
  • the acid generator is a component that generates an acid by the action of heat or light and promotes crosslinking of the [B] compound.
  • the composition for forming a resist underlayer film contains a [D] acid generator, the crosslinking reaction of the [B] compound is promoted, and the hardness of the resist underlayer film to be formed can be increased.
  • An acid generator can be used individually by 1 type or in combination of 2 or more types.
  • Examples of the acid generator include onium salt compounds and N-sulfonyloxyimide compounds.
  • onium salt compounds include sulfonium salts such as triphenylsulfonium trifluoromethanesulfonate and triphenylsulfonium nonafluoro-n-butanesulfonate; Tetrahydro such as 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium trifluoromethanesulfonate, 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium nonafluoro-n-butanesulfonate Thiophenium salt; Iodonium such as diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluoro-n-butanesulfonate, bis (4-t-butylphenyl) iodonium trifluoromethanesulfonate, bis (4-t-butylphenyl) iodonium nonafluoro
  • N-sulfonyloxyimide compounds include N- (trifluoromethanesulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (nonafluoro-n-butanesulfonyloxy). ) Bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide and the like.
  • the [D] acid generator is preferably an onium salt compound, more preferably an iodonium salt or an ammonium salt, and bis (4-t-butylphenyl) iodonium nonafluoro-n-butanesulfonate or triethylammonium nona. More preferred is fluoro-n-butanesulfonate.
  • the lower limit of the content of the [D] acid generator is 0.1 part by mass with respect to 100 parts by mass of the [B] compound. Is preferable, 0.5 mass part is more preferable, and 1 mass part is further more preferable. As an upper limit of the said content, 20 mass parts is preferable, 15 mass parts is more preferable, and 10 mass parts is further more preferable. [D] By making content of an acid generator into the said range, the crosslinking reaction of a [B] compound can be accelerated
  • crosslinking agent examples include polyfunctional (meth) acrylate compounds such as trimethylolpropane tri (meth) acrylate and pentaerythritol tri (meth) acrylate; Epoxy compounds such as novolac type epoxy resin and bisphenol type epoxy resin; 2-hydroxymethyl-4,6-dimethylphenol, 4,4 ′-(1- (4- (1- (4-hydroxy-3,5-bis (methoxymethyl) phenyl) -1-methylethyl) phenyl) Hydroxymethyl group-substituted phenolic compounds such as ethylidene) bis (2,6-bis (methoxymethyl) phenol); Alkoxyalkyl group-containing phenolic compounds such as methoxymethyl group-containing phenolic compounds and ethoxymethyl group-containing phenolic compounds; (Poly) methylolated melamine, Examples thereof include compounds having an alkoxyalkylated amino group such as (poly) methylol glycoluril.
  • methoxymethyl group-containing phenol compounds and compounds having alkoxyalkylated amino groups are preferred, and 4,4 ′-(1- (4- (1- (4-hydroxy- 3,5-bis (methoxymethyl) phenyl) -1-methylethyl) phenyl) ethylidene) bis (2,6-bis (methoxymethyl) phenol) and 1,3,4,6-tetra (methoxymethyl) glycoluril Is more preferable.
  • the lower limit of the content of the [E] crosslinking agent is preferably 0.1 parts by mass with respect to 100 parts by mass of the [B] compound. 0.5 parts by mass is more preferable, 1 part by mass is further preferable, and 3 parts by mass is particularly preferable. As an upper limit of the said content, 100 mass parts is preferable, 50 mass parts is more preferable, 30 mass parts is further more preferable, 20 mass parts is especially preferable. [E] By making content of a crosslinking agent into the said range, the crosslinking reaction of a [B] compound can be caused more effectively.
  • the resist underlayer film forming composition may contain, as other optional components, for example, a surfactant (except for those corresponding to the [A] compound), an adhesion aid, and the like.
  • composition for forming a resist underlayer film can further improve the coating property on a substrate by containing a surfactant.
  • surfactants can be used singly or in combination of two or more.
  • surfactant examples include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene-n-octylphenyl ether, polyoxyethylene-n-nonylphenyl ether, polyethylene glycol dilaurate, polyethylene Nonionic surfactants such as glycol distearate are listed.
  • the lower limit of the surfactant content is preferably 0.01 parts by mass with respect to 100 parts by mass of the [B] compound, 0.05 Part by mass is more preferable, and 0.1 part by mass is even more preferable.
  • the said content 10 mass parts is preferable, 5 mass parts is more preferable, and 1 mass part is further more preferable.
  • the adhesion assistant is a component that improves the adhesion between the resist underlayer film and the substrate as the foundation.
  • the adhesion assistant can be used singly or in combination of two or more.
  • trimethoxysilylbenzoic acid ⁇ -methacryloxypropyltrimethoxysilane, vinyltriacetoxysilane, vinyltrimethoxysilane, ⁇ -isocyanatopropyltriethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, ⁇ - ( 3,4-epoxycyclohexyl) ethyltrimethoxysilane, 1,3,5-N-tris (trimethoxysilylpropyl) isocyanurate and the like.
  • the lower limit of the content of the adhesion assistant is preferably 0.01 parts by mass with respect to 100 parts by mass of the [B] compound, 0.05 Part by mass is more preferable, and 0.1 part by mass is even more preferable.
  • the lower limit of the content 10 mass parts is preferable, 10 mass parts is more preferable, and 5 mass parts is further more preferable.
  • the [A] compound, the [B] compound, the [C] solvent, and an optional component as necessary are mixed in a predetermined ratio, and the obtained mixture is preferably adjusted to 0.00. It can be prepared by filtering with a membrane filter of about 1 ⁇ m.
  • the lower limit of the solid content concentration of the resist underlayer film forming composition is preferably 0.1% by mass, more preferably 1% by mass, further preferably 2% by mass, and particularly preferably 4% by mass.
  • the upper limit of the solid content concentration is preferably 50% by mass, more preferably 30% by mass, further preferably 20% by mass, and particularly preferably 10% by mass.
  • the lower limit of the static contact angle with pure water of the resist underlayer film formed from the resist underlayer film forming composition is preferably 50 °, more preferably 55 °, and further preferably 60 °.
  • the upper limit of the static contact angle is preferably 75 °, more preferably 73 °.
  • the method for producing a patterned substrate of the present invention comprises a step of applying the resist underlayer film forming composition on one surface side of the substrate (hereinafter also referred to as “coating step”), and the above-described coating step.
  • a step of forming a resist pattern on the opposite side of the formed resist underlayer film from the substrate hereinafter also referred to as “resist pattern forming step”
  • etching etching
  • the method for producing a patterned substrate further includes a step of forming a silicon-containing film on the opposite side of the resist underlayer film formed by the coating step from the substrate after the coating step, In the pattern forming step, a resist pattern may be formed on the surface of the silicon-containing film opposite to the substrate.
  • the resist underlayer film forming composition described above since the resist underlayer film forming composition described above is used, a resist underlayer film having excellent flatness and surface coatability can be formed. Moreover, the board
  • the resist underlayer film forming composition is applied to one surface side of the substrate. Thereby, a resist underlayer film is formed.
  • the formation of the resist underlayer film is usually performed by applying the resist underlayer film forming composition to one surface side of the substrate to form a coating film and heating the coating film.
  • the substrate examples include a silicon wafer, a wafer coated with aluminum, and a SiO 2 substrate.
  • substrate etc. is not specifically limited, For example, it can implement by appropriate methods, such as spin coating, cast coating, and roll coating.
  • the coating film is usually heated in the air.
  • heating temperature 150 ° C is preferred, 180 ° C is more preferred, and 200 ° C is still more preferred.
  • 500 degreeC is preferable, 380 degreeC is more preferable, 300 degreeC is further more preferable.
  • heating temperature is less than the said minimum, oxidation bridge
  • crosslinking does not fully advance and there exists a possibility that a characteristic required as a resist underlayer film may not be expressed.
  • heating time 15 seconds are preferred, 30 seconds are more preferred, and 45 seconds are still more preferred.
  • the upper limit of the heating time is preferably 1,200 seconds, more preferably 600 seconds, and even more preferably 300 seconds.
  • the coating film Before heating the coating film at a temperature of 150 ° C. or more and 500 ° C. or less, it may be preheated at a temperature of 60 ° C. or more and 250 ° C. or less. As a minimum of heating time in preliminary heating, 10 seconds are preferred and 30 seconds are more preferred. The upper limit of the heating time is preferably 300 seconds, and more preferably 180 seconds.
  • the coating film is heated to form a resist underlayer film.
  • the resist underlayer film forming composition contains a radiation-sensitive acid generator.
  • the radiation used for this exposure includes electromagnetic waves such as visible light, ultraviolet light, far ultraviolet light, X-rays and ⁇ rays, and particle beams such as electron beams, molecular beams and ion beams, depending on the type of the radiation-sensitive acid generator. It is selected appropriately.
  • the lower limit of the average thickness of the resist underlayer film to be formed is preferably 0.05 ⁇ m, more preferably 0.1 ⁇ m.
  • the upper limit of the average thickness is preferably 5 ⁇ m, more preferably 3 ⁇ m, and even more preferably 2 ⁇ m.
  • the resist underlayer film may further include a step of forming an intermediate layer (intermediate film) on the surface opposite to the substrate.
  • This intermediate layer is a layer provided with the above functions in order to further supplement the functions of the resist underlayer film and / or the resist film or provide functions that these resist layers do not have in resist pattern formation.
  • the antireflection film is formed as an intermediate layer, the antireflection function of the resist underlayer film can be further supplemented.
  • This intermediate layer can be formed of, for example, an inorganic oxide.
  • an inorganic oxide "NFC SOG01”, “NFC SOG04”, “NFC SOG080” (above, JSR company) etc. are mentioned as a commercial item, for example.
  • polysiloxane, titanium oxide, alumina oxide, tungsten oxide, or the like formed by a CVD method can be used.
  • the method for forming the intermediate layer is not particularly limited, and for example, a coating method or a CVD method can be used. Among these, a coating method is preferable. When the coating method is used, the intermediate layer can be formed continuously after forming the resist underlayer film. As a method for forming the intermediate layer, it is preferable to heat after applying the polysiloxane composition.
  • the average thickness of the intermediate layer is appropriately selected according to the function required for the intermediate layer, but the lower limit of the average thickness of the intermediate layer is preferably 10 nm, and more preferably 20 nm.
  • the upper limit of the average thickness is preferably 3,000 nm, and more preferably 300 nm.
  • resist pattern formation process In this step, a resist pattern is formed on the surface opposite to the substrate of the resist underlayer film formed by the coating step.
  • Examples of the method for performing this step include a method using a resist composition.
  • the resist film is volatilized by volatilizing the solvent in the coating film. Form.
  • the resist composition examples include a positive or negative chemically amplified resist composition containing a radiation-sensitive acid generator, a positive resist composition comprising an alkali-soluble resin and a quinonediazide-based photosensitizer, and an alkali-soluble resin.
  • examples thereof include a negative resist composition composed of a crosslinking agent.
  • a commercially available resist composition can be used as it is.
  • the coating method of the resist composition is not particularly limited, and examples thereof include a spin coating method.
  • the pre-baking temperature is appropriately adjusted according to the type of resist composition used.
  • the formed resist film is exposed by selective radiation irradiation.
  • electromagnetic waves such as visible rays, ultraviolet rays, far ultraviolet rays, X-rays, ⁇ rays, etc., depending on the type of the radiation-sensitive acid generator used in the resist composition; It is appropriately selected from particle beams such as ion beams.
  • KrF excimer laser light (248 nm), ArF excimer laser light (193 nm), F 2 excimer laser light (wavelength 157 nm), Kr 2 excimer laser light (wavelength 147 nm), ArKr excimer laser light (Wavelength 134 nm) and extreme ultraviolet rays (wavelength 13.5 nm, etc., EUV) are more preferable, and KrF excimer laser light, ArF excimer laser light, and EUV are more preferable.
  • post-baking After exposure, post-baking can be performed to improve resolution, pattern profile, developability, and the like.
  • the post-baking temperature is appropriately adjusted according to the type of resist composition used.
  • the exposed resist film is developed with a developer to form a resist pattern.
  • This development may be alkali development or organic solvent development.
  • the developer include alkaline aqueous solutions such as sodium hydroxide, potassium hydroxide, ammonia, triethylamine, and tetramethylammonium hydroxide in the case of alkali development.
  • An appropriate amount of a surfactant or the like can also be added to these alkaline aqueous solutions.
  • examples of the developer include various organic solvents exemplified as the above-mentioned [C] solvent.
  • a method for performing this resist pattern forming step in addition to the method using the resist composition described above, a method using a nanoimprint method, a method using a self-assembled composition, and the like can also be used.
  • etching is performed using the resist pattern as a mask.
  • etching is sequentially performed in the order of the resist underlayer film and the substrate.
  • etching is sequentially performed in the order of the intermediate layer, the resist underlayer film, and the substrate.
  • the etching method include dry etching and wet etching. Among these, dry etching is preferable from the viewpoint of improving the shape of the substrate pattern. For this dry etching, for example, gas plasma such as oxygen plasma is used. After the etching, a substrate having a predetermined pattern is obtained.
  • the resist underlayer film of the present invention is formed from the resist underlayer film forming composition. Since the resist underlayer film is formed from the resist underlayer film forming composition described above, it is excellent in flatness and surface coatability.
  • Mw and Mn [A] Mw and Mn of the compound were measured using a Tosoh GPC column (two “G2000HXL” and one “G3000HXL”), flow rate: 1.0 mL / min, elution solvent: tetrahydrofuran, column temperature: 40 ° C. Under analysis conditions, measurement was performed by a gel permeation chromatograph (detector: differential refractometer) using monodisperse polystyrene as a standard.
  • composition for forming resist underlayer film ⁇ Preparation of composition for forming resist underlayer film>
  • [A] compound, [B] compound, [C] solvent, [D] acid generator and [E] crosslinking agent used for the preparation of the resist underlayer film forming composition are shown below.
  • A-1 Compound represented by the following formula (A-1)
  • A-2 Compound represented by the following formula (A-2)
  • A-3 Compound represented by the following formula (A-3)
  • A- 4 Compound represented by the following formula (A-4)
  • A-5 Compound represented by the following formula (A-5)
  • A-6 Compound represented by the following formula (A-6)
  • A-7 The compound represented by the following formula (A-7)
  • A-8 The compound represented by the following formula (A-8)
  • A-9 The compound represented by the following formula (A-9)
  • a-1 The following formula Compound represented by (a-1) a-2: Compound represented by the following formula (a-2) (2,4,7,9-tetramethyl-5-decyne-4,7-diol-dipoly Oxyethylene ether (Takesurf K-465 from Takemoto Yushi Co.)
  • a-3 Compound represented by the following formula (a-3) a-4: Compound represented by the following formula (a-4)
  • B-1 resin represented by the following formula (B-1)
  • B-2 resin having a structural unit represented by the following formula (B-2)
  • B-3 represented by the following formula (B-3)
  • Resin B-4 Resin having a structural unit represented by the following formula (B-4)
  • B-5 Resin having a structural unit represented by the following formula (B-5)
  • B-6 Formula (B) Resin represented by -6)
  • B-7 Compound represented by the following formula (B-7)
  • B-8 Resin represented by the following formula (B-8)
  • B-9 Formula (B-9)
  • B-10 resin represented by the following formula (B-10)
  • B-11 resin having a structural unit represented by the following formula (B-11)
  • B-12 resin represented by the following formula (B ⁇ 12)
  • Compound B-13 Compound represented by the following formula (B-13)
  • B-14 Resin having a structural unit represented by the following formula (B-14)
  • B-15 ( Resin B-16 having a structural unit represented by -15): resin represented by the following formula (B
  • D-1 Bis (4-t-butylphenyl) iodonium nonafluoro-n-butanesulfonate (compound represented by the following formula (D-1))
  • Example 1 [A] 0.08 parts by mass of (A-1) compound and (B-1) 9.92 parts by mass of [B] compound, [C] 90 parts of (C-1) as solvent Dissolved in the part. This solution was filtered through a membrane filter having a pore size of 0.1 ⁇ m to prepare a resist underlayer film forming composition of Example 1.
  • Examples 2 to 26 and Comparative Examples 1 to 5 Except having used each component of the kind and content shown in the following Table 2 and Table 3, it operated similarly to Example 1 and prepared each resist underlayer film forming composition. “-” In Tables 2 and 3 indicates that the corresponding component was not used.
  • the prepared resist underlayer film forming composition was applied onto a silicon wafer as a substrate by a spin coating method. Thereafter, baking was performed (baked) at 250 ° C. for 60 seconds in an air atmosphere to form a resist underlayer film having an average thickness of 200 nm. The surface of the silicon wafer on which the resist underlayer film was formed was observed visually and using an optical microscope. The coating property to the substrate was evaluated as “A” when the resist underlayer film could be formed without abnormality, and as “B” when defects such as pinholes and striations occurred.
  • the wafer stage position in the contact angle measuring device was adjusted, and the wafer on which the resist underlayer film was formed was set on the adjusted stage.
  • water was injected into the needle, and the position of the needle was finely adjusted to an initial position where water droplets could be formed on the set wafer.
  • water was discharged from the needle at a rate of 9.8 ⁇ L / min to form a 6.5 ⁇ L water droplet on the wafer, and the needle was pulled out from the water droplet.
  • the static contact angle was continuously measured 10 times at the same point over 4 seconds from 2 seconds after the formation of water droplets. This operation was performed three times at different water droplet formation sites, and the measured values at a total of 30 points were averaged to obtain a static contact angle value.
  • a resist underlayer film was formed in the same manner as in the evaluation of applicability to the substrate.
  • a polysiloxane composition (“NFC SOG080" manufactured by JSR Corporation) as an intermediate film forming composition was applied to the surface of the resist underlayer film by a spin coating method, followed by baking at 250 ° C for 60 seconds in an air atmosphere ( The film consisting of the resist underlayer film and the intermediate layer was observed visually and using an optical microscope.In the surface coating property, defects such as pinholes and striations were observed. The case where the resist underlayer film and the intermediate layer could be formed without any abnormality was evaluated as “A”, and the case where defects such as pinholes and striations were observed was evaluated as “B”.
  • the resist underlayer film formed from the resist underlayer film forming composition of the examples satisfies general characteristics such as application properties to the substrate, and has flatness and surface coating. Excellent in both properties.
  • the resist underlayer film formed from the composition for forming a resist underlayer film of the comparative example was insufficient in flatness, surface coating property, and the like.
  • a resist underlayer film having excellent flatness and excellent surface coating properties can be formed. Since the resist underlayer film of the present invention is formed from the resist underlayer film forming composition, it is excellent in flatness and surface coating property. According to the method for producing a patterned substrate of the present invention, a substrate having an excellent pattern shape can be obtained by using the resist underlayer film. Therefore, these can be suitably used for manufacturing semiconductor devices and the like that are expected to be further miniaturized in the future.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)

Abstract

L'invention concerne une composition pour former un film sous-couche de réserve, qui contient: un premier composé représenté par la formule (1-1) ou la formule (1-2); un second composé autre que le premier composé, comportant un cycle aromatique; et un solvant. Dans la formule (1-1), R41 et R42 représentent chacun un atome d'hydrogène ou un groupe alkyle fluoré; R51 et R52 représentent chacun un groupe hydrocarbure monovalent comportant 1 à 20 atomes de carbone; et Z représente un groupe de liaison divalent ne contenant pas d'atome de fluor. Dans la formule (1-2), L1 représente un groupe de liaison divalent ne contenant pas d'atome de fluor; R1' représente un atome d'hydrogène, un groupe alkyle fluoré ou un groupe représenté par la formule (1-2-R) ; et A représente un groupe hydroxy, un groupe alcoxy fluoré ou un groupe représenté par la formule (1-2-A). Dans la formule (1-2-R), R81 représente un atome d'hydrogène ou un groupe alkyle fluoré. Dans la formule (1-2-A), L2 représente un groupe de liaison divalent ne contenant pas d'atome de fluor; et R1'' représente un atome d'hydrogène ou un groupe alkyle fluoré.
PCT/JP2016/068191 2015-06-22 2016-06-17 Composition pour former un film sous-couche de réserve, film sous-couche de réserve et procédé de production de substrat à motifs Ceased WO2016208518A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-125183 2015-06-22
JP2015125183 2015-06-22

Publications (1)

Publication Number Publication Date
WO2016208518A1 true WO2016208518A1 (fr) 2016-12-29

Family

ID=57585584

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/068191 Ceased WO2016208518A1 (fr) 2015-06-22 2016-06-17 Composition pour former un film sous-couche de réserve, film sous-couche de réserve et procédé de production de substrat à motifs

Country Status (2)

Country Link
TW (1) TW201704335A (fr)
WO (1) WO2016208518A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018145367A (ja) * 2017-03-09 2018-09-20 東ソー株式会社 ポリアリーレンスルフィド組成物
WO2018186310A1 (fr) * 2017-04-03 2018-10-11 日産化学株式会社 Composition pour revêtir un substrat avec une différence de hauteur, qui contient une résine de polyéther ayant un groupe photoréticulable
JP2021113972A (ja) * 2020-01-17 2021-08-05 三星エスディアイ株式会社Samsung SDI Co., Ltd. レジスト下層膜用組成物およびこれを用いたパターン形成方法
CN116426170A (zh) * 2022-01-04 2023-07-14 新应材股份有限公司 树脂组成物、抗蚀刻层以及蚀刻方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7698607B2 (ja) * 2022-06-10 2025-06-25 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002006506A (ja) * 2000-06-22 2002-01-09 Hitachi Chem Co Ltd アンダーコート樹脂組成物及びこれを用いたレジスト像の製造法
JP2003535352A (ja) * 1998-12-20 2003-11-25 アライドシグナル・インコーポレイテツド 高温安定性を備えたノボラックポリマー平坦化フィルム
JP2003345027A (ja) * 2002-05-24 2003-12-03 Nissan Chem Ind Ltd リソグラフィー用反射防止膜形成組成物
WO2008026468A1 (fr) * 2006-08-28 2008-03-06 Nissan Chemical Industries, Ltd. Composition servant à créer une sous-couche de réserve et contenant un additif liquide
JP2009251130A (ja) * 2008-04-02 2009-10-29 Jsr Corp レジスト下層膜形成用組成物及びそれを用いたデュアルダマシン構造の形成方法
WO2009141924A1 (fr) * 2008-05-23 2009-11-26 三菱化学株式会社 Composition de résine durcissable colorante, filtre coloré, affichage à cristaux liquides et affichage el organique
JP2010107957A (ja) * 2008-10-01 2010-05-13 Tokyo Ohka Kogyo Co Ltd 感光性樹脂組成物、カラーフィルター、及び液晶表示ディスプレイ
JP2010113209A (ja) * 2008-11-07 2010-05-20 Shin-Etsu Chemical Co Ltd 熱酸発生剤を含有するレジスト下層材料、レジスト下層膜形成基板及びパターン形成方法
JP2013033227A (ja) * 2011-06-30 2013-02-14 Fujifilm Corp パターン形成方法、積層レジストパターン、有機溶剤現像用の積層膜、レジスト組成物、電子デバイスの製造方法及び電子デバイス
JP2013097002A (ja) * 2011-10-27 2013-05-20 Fujifilm Corp パターン形成方法、積層レジストパターン、有機溶剤現像用の積層膜、レジスト組成物、電子デバイスの製造方法及び電子デバイス
JP2013253227A (ja) * 2012-05-08 2013-12-19 Shin-Etsu Chemical Co Ltd 有機膜材料、これを用いた有機膜形成方法及びパターン形成方法、並びに熱分解性重合体
JP2015129937A (ja) * 2013-12-27 2015-07-16 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド ナノリソグラフィのための有機底部反射防止コーティング組成物
WO2015122296A1 (fr) * 2014-02-12 2015-08-20 日産化学工業株式会社 Composition filmogène comprenant un tensioactif contenant du fluor
JP2016028416A (ja) * 2014-07-04 2016-02-25 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ギャップ充填方法

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003535352A (ja) * 1998-12-20 2003-11-25 アライドシグナル・インコーポレイテツド 高温安定性を備えたノボラックポリマー平坦化フィルム
JP2002006506A (ja) * 2000-06-22 2002-01-09 Hitachi Chem Co Ltd アンダーコート樹脂組成物及びこれを用いたレジスト像の製造法
JP2003345027A (ja) * 2002-05-24 2003-12-03 Nissan Chem Ind Ltd リソグラフィー用反射防止膜形成組成物
WO2008026468A1 (fr) * 2006-08-28 2008-03-06 Nissan Chemical Industries, Ltd. Composition servant à créer une sous-couche de réserve et contenant un additif liquide
JP2009251130A (ja) * 2008-04-02 2009-10-29 Jsr Corp レジスト下層膜形成用組成物及びそれを用いたデュアルダマシン構造の形成方法
WO2009141924A1 (fr) * 2008-05-23 2009-11-26 三菱化学株式会社 Composition de résine durcissable colorante, filtre coloré, affichage à cristaux liquides et affichage el organique
JP2010107957A (ja) * 2008-10-01 2010-05-13 Tokyo Ohka Kogyo Co Ltd 感光性樹脂組成物、カラーフィルター、及び液晶表示ディスプレイ
JP2010113209A (ja) * 2008-11-07 2010-05-20 Shin-Etsu Chemical Co Ltd 熱酸発生剤を含有するレジスト下層材料、レジスト下層膜形成基板及びパターン形成方法
JP2013033227A (ja) * 2011-06-30 2013-02-14 Fujifilm Corp パターン形成方法、積層レジストパターン、有機溶剤現像用の積層膜、レジスト組成物、電子デバイスの製造方法及び電子デバイス
JP2013097002A (ja) * 2011-10-27 2013-05-20 Fujifilm Corp パターン形成方法、積層レジストパターン、有機溶剤現像用の積層膜、レジスト組成物、電子デバイスの製造方法及び電子デバイス
JP2013253227A (ja) * 2012-05-08 2013-12-19 Shin-Etsu Chemical Co Ltd 有機膜材料、これを用いた有機膜形成方法及びパターン形成方法、並びに熱分解性重合体
JP2015129937A (ja) * 2013-12-27 2015-07-16 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド ナノリソグラフィのための有機底部反射防止コーティング組成物
WO2015122296A1 (fr) * 2014-02-12 2015-08-20 日産化学工業株式会社 Composition filmogène comprenant un tensioactif contenant du fluor
JP2016028416A (ja) * 2014-07-04 2016-02-25 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ギャップ充填方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018145367A (ja) * 2017-03-09 2018-09-20 東ソー株式会社 ポリアリーレンスルフィド組成物
WO2018186310A1 (fr) * 2017-04-03 2018-10-11 日産化学株式会社 Composition pour revêtir un substrat avec une différence de hauteur, qui contient une résine de polyéther ayant un groupe photoréticulable
KR20190131543A (ko) * 2017-04-03 2019-11-26 닛산 가가쿠 가부시키가이샤 광가교기를 갖는 폴리에테르수지를 포함하는 단차기판 피복조성물
US10871712B2 (en) 2017-04-03 2020-12-22 Nissan Chemical Corporation Stepped substrate-coating composition containing polyether resin having photocrosslinkable group
KR102455502B1 (ko) 2017-04-03 2022-10-17 닛산 가가쿠 가부시키가이샤 광가교기를 갖는 폴리에테르수지를 포함하는 단차기판 피복조성물
JP2021113972A (ja) * 2020-01-17 2021-08-05 三星エスディアイ株式会社Samsung SDI Co., Ltd. レジスト下層膜用組成物およびこれを用いたパターン形成方法
JP7017653B2 (ja) 2020-01-17 2022-02-08 三星エスディアイ株式会社 レジスト下層膜用組成物およびこれを用いたパターン形成方法
US11987561B2 (en) 2020-01-17 2024-05-21 Samsung Sdi Co., Ltd. Resist underlayer composition, and method of forming patterns using the composition
CN116426170A (zh) * 2022-01-04 2023-07-14 新应材股份有限公司 树脂组成物、抗蚀刻层以及蚀刻方法

Also Published As

Publication number Publication date
TW201704335A (zh) 2017-02-01

Similar Documents

Publication Publication Date Title
JP6711104B2 (ja) レジスト下層膜形成方法及びパターン形成方法
KR101411737B1 (ko) 패턴 형성 방법 및 레지스트 하층막 형성용 조성물
JP6015114B2 (ja) 近赤外光吸収膜形成材料及び近赤外光吸収膜を有する積層膜
TWI765910B (zh) 抗蝕劑底層膜形成用組成物、抗蝕劑底層膜及其形成方法以及圖案化基板的製造方法
TWI830827B (zh) 抗蝕劑底層膜形成用組成物、抗蝕劑底層膜及抗蝕劑圖案形成方法
JP6907522B2 (ja) レジスト下層膜形成用組成物及びその製造方法、レジスト下層膜並びにパターニングされた基板の製造方法
JP7196389B2 (ja) 半導体用レジスト下層膜形成組成物、レジスト下層膜、レジスト下層膜の形成方法及びパターニング基板の製造方法
US11320739B2 (en) Composition for resist underlayer film formation, resist underlayer film and method for producing patterned substrate
JP2016167047A (ja) レジスト下層膜形成用組成物、レジスト下層膜及びパターニングされた基板の製造方法
JP2020056889A (ja) レジスト下層膜形成用組成物、レジスト下層膜及びレジストパターン形成方法
WO2016208518A1 (fr) Composition pour former un film sous-couche de réserve, film sous-couche de réserve et procédé de production de substrat à motifs
JP6160068B2 (ja) レジスト下層膜形成用樹脂組成物、レジスト下層膜、その形成方法及びパターン形成方法
KR102260111B1 (ko) 막 형성용 조성물, 레지스트 하층막 및 그의 형성 방법, 및 패턴 형성 방법
JPWO2017208796A1 (ja) 膜形成用組成物、膜、レジスト下層膜の形成方法、パターニングされた基板の製造方法及び化合物
JP6281490B2 (ja) レジスト下層膜形成用樹脂組成物、レジスト下層膜及びその形成方法、並びにパターン形成方法
US20230041656A1 (en) Composition, method of forming resist underlayer film, and method of forming resist pattern

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16814289

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16814289

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP