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WO2016201726A1 - Appareil électroluminescent à base de points quantiques et dispositif d'affichage - Google Patents

Appareil électroluminescent à base de points quantiques et dispositif d'affichage Download PDF

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Publication number
WO2016201726A1
WO2016201726A1 PCT/CN2015/082720 CN2015082720W WO2016201726A1 WO 2016201726 A1 WO2016201726 A1 WO 2016201726A1 CN 2015082720 W CN2015082720 W CN 2015082720W WO 2016201726 A1 WO2016201726 A1 WO 2016201726A1
Authority
WO
WIPO (PCT)
Prior art keywords
quantum dot
layer
dot light
electrode layer
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2015/082720
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English (en)
Chinese (zh)
Inventor
程艳
郭伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Publication of WO2016201726A1 publication Critical patent/WO2016201726A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a quantum dot-based electroluminescent device and a display device.
  • OLED Organic electroluminescent device
  • Quantum dots also known as semiconductor nanocrystals, are a new type of nano-fluorescent material that has many advantages over traditional organic fluorescent dyes, such as a wide excitation spectrum, narrow and symmetric emission spectra.
  • the fluorescent intensity is high, and the quantum dot luminescent material can be excited to generate light of various colors to achieve different display effects.
  • the prior art generally uses a quantum dot film to attach to the surface of the backlight unit to enhance the display effect, how to maximize the advantages of the quantum dot to be applied to the display technology, and to improve the color gamut and display quality of the display device.
  • Point display is one of the main development directions in the technical field.
  • the present invention provides a quantum dot-based electroluminescent device and display device having excellent color gamut and display quality.
  • An electroluminescent device based on a quantum dot comprising a positive electrode layer, a negative electrode layer, and a multi-layer quantum dot light-emitting layer interposed between the positive electrode layer and the negative electrode layer, the positive electrode layer and A hole transport layer is disposed between the quantum dot light-emitting layers, and an electron transport layer is disposed between the negative electrode layer and the quantum dot light-emitting layer.
  • the quantum dot luminescent layer comprises a first quantum dot luminescent layer, a second quantum dot luminescent layer and a
  • the three-quantum dot light-emitting layer has different colors of light generated by the excitation of the first quantum dot light-emitting layer, the second quantum dot light-emitting layer, and the third quantum dot light-emitting layer.
  • the first quantum dot luminescent layer, the second quantum dot luminescent layer, and the third quantum dot luminescent layer are a red quantum dot emitting layer, a green quantum dot emitting layer, and a blue quantum dot emitting layer, respectively.
  • the plurality of quantum dot light emitting layers are stacked, and the hole transport layer and the electron transport layer are disposed between each two adjacent quantum dot light emitting layers.
  • a plurality of the quantum dot light-emitting layers are arranged side by side in the width direction of the positive electrode layer between the positive electrode layer and the negative electrode layer, and each of the two sides of the quantum dot light-emitting layer has a thickness direction
  • the hole transport layer that is in close contact with the positive electrode layer and the electron transport layer that is in close contact with the negative electrode layer are provided.
  • a light shielding layer is disposed between each of the two quantum dot emitting layers.
  • each of the light shielding layers separates the hole transport layer and the electron transport layer of two adjacent quantum dot light emitting layers.
  • Another object of the present invention is to provide a display device using the above-described quantum dot-based electroluminescent device as a light source.
  • the invention replaces the existing organic light-emitting material with the quantum dot material as the light-emitting layer, and can realize the realization of various color display effects conveniently by controlling the size of the quantum dots; and is provided with an empty space between the positive electrode layer and the quantum dot light-emitting layer.
  • An electron transport layer is disposed between the hole transport layer, the negative electrode layer and the quantum dot light-emitting layer to accelerate the transmission speed of electrons and holes between the positive and negative electrode layers, so that the electroluminescent device has better color gamut and display quality. .
  • FIG. 1 is a schematic structural view of an electroluminescent device according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic structural view of an electroluminescent device according to Embodiment 2 of the present invention.
  • a quantum dot-based electroluminescent device of the present invention comprises a positive electrode layer 1, a negative electrode layer 2, and a multi-layer quantum dot light-emitting layer interposed between the positive electrode layer 1 and the negative electrode layer 2, in the positive electrode.
  • a hole transport layer 6a is disposed between the electrode layer 1 and the quantum dot light-emitting layer
  • an electron transport layer 6b is disposed between the negative electrode layer 2 and the quantum dot light-emitting layer.
  • the electroluminescent device can be widely used as a backlight. In the display device.
  • the quantum dot light emitting layer includes a first quantum dot light emitting layer 3, a second quantum dot light emitting layer 4, and a third quantum dot light emitting layer 5, and the first quantum dot light emitting layer 3, the second quantum dot light emitting layer 4, and the third quantum dot The color of the light generated by the excitation layer 5 is different.
  • the first quantum dot luminescent layer 3, the second quantum dot luminescent layer 4, and the third quantum dot luminescent layer 5 are a red quantum dot emitting layer, a green quantum dot emitting layer, and a blue quantum dot emitting layer, respectively.
  • the dot light emitting layer is stacked on top of each other between the positive electrode layer 1 and the negative electrode layer 2, and is arranged between each adjacent quantum dot light emitting layer in order to accelerate the transmission speed of electrons and holes between the positive and negative electrode layers.
  • the hole transport layer 6a and the electron transport layer 6b between each two quantum dot light-emitting layers respectively transmit electrons and holes excited by an electric field to adjacent quantum dot light-emitting layers, respectively, and the positive electrode layer 1 is respectively.
  • the holes and electrons injected into the negative electrode layer 2 are combined in different quantum dot light-emitting layers to produce different light colors to form white light.
  • the quantum dot material is used to replace the existing organic light-emitting material as the light-emitting layer, and the quantum dot light-emitting layer includes the dielectric layers of the three primary colors, the size of the quantum dots can be conveniently controlled by the display device to realize various color display effects. Implementation.
  • FIG. 2 is a schematic structural view of an electroluminescent device of the present embodiment.
  • the multilayer quantum dot light-emitting layer of the present embodiment is arranged differently, and specifically, the plurality of quantum dot light-emitting layers are arranged side by side in the width direction of the positive electrode layer 1 on the positive electrode layer 1 and the negative electrode layer. Between the two, a hole transport layer 6a which is in close contact with the positive electrode layer 1 and an electron transport layer 6b which is in close contact with the negative electrode layer 2 are respectively disposed on both sides in the thickness direction of each of the quantum dot light-emitting layers.
  • a light shielding layer 7 is disposed between each of the two quantum dot emitting layers, and each of the light shielding layers 7 simultaneously emits two adjacent quantum dots.
  • the hole transport layer 6a of the layer is separated from the electron transport layer 6b.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un appareil électroluminescent à base de points quantiques, comprenant une couche d'électrode positive (1), une couche d'électrode négative (2) et une pluralité de couches d'émission de lumière à points quantiques prises en sandwich entre la couche d'électrode positive (1) et la couche d'électrode négative (2). Une couche de transport de trous (6a) est disposée entre la couche d'électrode positive (1) et les couches d'émission de lumière à points quantiques, et une couche de transport d'électrons (6b) est disposée entre la couche d'électrode négative (2) et les couches d'émission de lumière à points quantiques. L'invention concerne également un dispositif d'affichage qui utilise l'appareil électroluminescent. L'utilisation du matériau à points quantiques à la place du matériau électroluminescent organique courant comme couche d'émission de lumière permet d'obtenir de façon commode les effets d'affichage de diverses couleurs par la commande de la taille des points quantiques. La disposition de la couche de transport de trous entre la couche d'électrode positive et les couches d'émission de lumière à points quantiques et la disposition de la couche de transport d'électrons entre la couche d'électrode négative et les couches d'émission de lumière à points quantiques accélèrent les vitesses de transport des électrons et des trous entre les couches d'électrode positive et négative et, de ce fait, l'appareil électroluminescent présente une meilleure gamme de couleur et une meilleure qualité d'affichage.
PCT/CN2015/082720 2015-06-16 2015-06-30 Appareil électroluminescent à base de points quantiques et dispositif d'affichage Ceased WO2016201726A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510332858.2 2015-06-16
CN201510332858.2A CN105098084B (zh) 2015-06-16 2015-06-16 一种基于量子点的电致发光器件及显示装置

Publications (1)

Publication Number Publication Date
WO2016201726A1 true WO2016201726A1 (fr) 2016-12-22

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CN (1) CN105098084B (fr)
WO (1) WO2016201726A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106816539B (zh) * 2016-12-08 2018-10-12 瑞声科技(南京)有限公司 量子点发光二极管装置及其制造方法
CN107046103A (zh) * 2017-01-18 2017-08-15 南方科技大学 叠层qled器件及其制备方法和应用
CN111384274B (zh) * 2018-12-29 2021-05-18 Tcl科技集团股份有限公司 一种量子点发光二极管及其制备方法
US11063098B2 (en) 2019-09-04 2021-07-13 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Method for fabricating display panel having carbon quantum dot layer
CN110707239A (zh) * 2019-09-04 2020-01-17 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
CN113130794B (zh) * 2019-12-31 2022-12-13 Tcl科技集团股份有限公司 一种量子点发光二极管及其制备方法
CN114628607A (zh) * 2022-03-18 2022-06-14 北京京东方技术开发有限公司 一种量子点发光层、发光器件及其制备方法

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US20100060156A1 (en) * 2006-03-30 2010-03-11 Canon Kabushiki Kaisha Display apparatus
CN101834277A (zh) * 2009-02-23 2010-09-15 三星电子株式会社 具有量子点多层的量子点发光器件及其形成方法
US20120248971A1 (en) * 2011-04-04 2012-10-04 Rohm Co., Ltd. Organic EL Device
WO2014088667A2 (fr) * 2012-09-14 2014-06-12 Qd Vision, Inc. Dispositif électroluminescent comprenant une structure en tandem
CN104241553A (zh) * 2014-10-13 2014-12-24 深圳市华星光电技术有限公司 Oled器件的制备方法及其制得的oled器件

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CN103426986A (zh) * 2012-05-31 2013-12-04 上海理工大学 一种量子点电致发光器件以及制备方法和应用
KR20140010719A (ko) * 2012-07-16 2014-01-27 삼성전자주식회사 전하응집을 이용한 발광소자 및 그 제조방법
CN203250777U (zh) * 2013-05-27 2013-10-23 北京京东方光电科技有限公司 一种量子点发光二极管及显示器件
CN103730472B (zh) * 2013-12-25 2015-05-06 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN104868026B (zh) * 2015-05-22 2019-02-22 深圳市华星光电技术有限公司 量子点发光元件

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100060156A1 (en) * 2006-03-30 2010-03-11 Canon Kabushiki Kaisha Display apparatus
CN101834277A (zh) * 2009-02-23 2010-09-15 三星电子株式会社 具有量子点多层的量子点发光器件及其形成方法
US20120248971A1 (en) * 2011-04-04 2012-10-04 Rohm Co., Ltd. Organic EL Device
WO2014088667A2 (fr) * 2012-09-14 2014-06-12 Qd Vision, Inc. Dispositif électroluminescent comprenant une structure en tandem
CN104241553A (zh) * 2014-10-13 2014-12-24 深圳市华星光电技术有限公司 Oled器件的制备方法及其制得的oled器件

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CN105098084B (zh) 2017-05-24

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