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WO2016132935A1 - Capteur de gaz de type à combustion catalytique - Google Patents

Capteur de gaz de type à combustion catalytique Download PDF

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Publication number
WO2016132935A1
WO2016132935A1 PCT/JP2016/053576 JP2016053576W WO2016132935A1 WO 2016132935 A1 WO2016132935 A1 WO 2016132935A1 JP 2016053576 W JP2016053576 W JP 2016053576W WO 2016132935 A1 WO2016132935 A1 WO 2016132935A1
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WIPO (PCT)
Prior art keywords
film
gas
heater
reaction film
gas sensor
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Ceased
Application number
PCT/JP2016/053576
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English (en)
Japanese (ja)
Inventor
服部　敦夫
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Yamaha Fine Technologies Co Ltd
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Yamaha Fine Technologies Co Ltd
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Publication date
Application filed by Yamaha Fine Technologies Co Ltd filed Critical Yamaha Fine Technologies Co Ltd
Publication of WO2016132935A1 publication Critical patent/WO2016132935A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
    • G01N25/22—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity on combustion or catalytic oxidation, e.g. of components of gas mixtures
    • G01N25/28—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity on combustion or catalytic oxidation, e.g. of components of gas mixtures the rise in temperature of the gases resulting from combustion being measured directly
    • G01N25/30—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity on combustion or catalytic oxidation, e.g. of components of gas mixtures the rise in temperature of the gases resulting from combustion being measured directly using electric temperature-responsive elements
    • G01N25/32—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity on combustion or catalytic oxidation, e.g. of components of gas mixtures the rise in temperature of the gases resulting from combustion being measured directly using electric temperature-responsive elements using thermoelectric elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
    • G01N27/16—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by burning or catalytic oxidation of surrounding material to be tested, e.g. of gas

Definitions

  • the present invention relates to a technology for increasing the detection sensitivity of combustible gas and reducing power consumption in a contact combustion type gas sensor that detects combustible gas.
  • a catalytic combustion type gas sensor for combusting combustible gas using a catalyst and electrically detecting an increase in catalyst temperature due to combustion heat has been used.
  • a catalytic combustion type gas sensor for combusting combustible gas using a catalyst and electrically detecting an increase in catalyst temperature due to combustion heat.
  • the combustible gas is located near the catalyst layer that acts as a catalyst for combustion of combustible gas. It has been proposed to form a heater for promoting the combustion of the gas.
  • the present invention has been made in order to solve the above-described conventional problems, and in a contact combustion type gas sensor for detecting a combustible gas, a technique for increasing the detection sensitivity of the combustible gas and saving power.
  • the purpose is to provide.
  • a catalytic combustion type gas sensor of the present invention is a catalytic combustion type gas sensor for detecting a flammable gas, comprising a low thermal conduction part and a high thermal conduction part; on the low thermal conduction part; A reaction film heater formed; a gas reaction film including a carrier formed on the reaction film heater on the low heat conduction part and carrying a combustion catalyst for the combustible gas; and the gas reaction on the low heat conduction part.
  • silicon-based conductive materials have lower electrical conductivity and thermal conductivity than metals. For this reason, at least a part of the reaction film heater and the region on the low heat conduction part of the reaction film heater wiring are formed of a silicon-based conductive material. Accordingly, when the gas reaction membrane is heated by the reaction membrane heater to increase the gas detection sensitivity, the power for heating the reaction membrane heater is used more effectively for heating the gas reaction membrane, or the reaction membrane heater It is possible to suppress the heat generated in step 1 from being transmitted to the high heat conduction portion via the reaction film heater wiring. Therefore, it becomes easier to achieve high sensitivity and power saving of the gas sensor.
  • the reaction film heater may be formed in a flat plate shape using the silicon-based conductive material.
  • the resistance of the reaction film heater is made larger than that of the reaction film heater wiring, the amount of heat generated by the reaction film heater is sufficiently increased, and the heat generated in the reaction film heater wiring is increased. Can be suppressed. Therefore, the power for heating the reaction film heater can be used more effectively for heating the gas reaction film.
  • the width can be increased with respect to the length in the current direction. Thereby, it can suppress that resistance of a reaction film
  • the gas reaction film can be heated uniformly, so that the detection sensitivity and measurement reproducibility of the combustible gas can be further increased.
  • the reaction film heater may be formed of metal, and the reaction film heater wiring may be formed of the silicon-based conductive material. By forming the reaction film heater wiring from a silicon-based conductive material, it is possible to suppress the heat generated by the reaction film heater from being transferred to the high heat conduction portion via the reaction film heater wiring.
  • the temperature measuring element is configured by connecting a first thermoelectric element formed of the silicon-based conductive material and a second thermoelectric element formed of a conductive material different from the first thermoelectric element. It may be a hot contact point of the thermopile.
  • the present invention can be realized in various modes.
  • a gas sensor a sensor module using the gas sensor, a combustible gas detection device and a combustible gas detection system using the sensor module, a leak test device and a leak test system using the gas sensor, sensor module and combustible gas detection device, etc. It is realizable with the aspect of.
  • FIG. 2B is a cross-sectional view taken along line AA in FIG. 2A.
  • FIG. 4B is a sectional view taken along line BB in FIG. 4A.
  • Sensor module: 1A and 1B are a cross-sectional view and a plan view showing a configuration of a catalytic combustion gas sensor module 10 (hereinafter also simply referred to as “sensor module 10”) according to the first embodiment of the present invention.
  • a sensor chip 100 is mounted in a package 19 including a case 11 and a cap 12.
  • the cap 12 is made of, for example, a sintered metal such as stainless steel or brass, a wire mesh made of stainless steel, or porous ceramics.
  • the sensor chip 100 is fixed to the case 11 by bonding the substrate 110 provided with the cavity 119 to the case 11 with the die bonding material 15.
  • FIG. 1B shows a state where the sensor chip 100 fixed to the case 11 is viewed from above.
  • 1B is a cutting line indicating the position of the cross section shown in FIG. 1A.
  • alternate long and short dash lines C1 and C2 are center lines indicating the center position of the sensor chip 100.
  • bonding pads P11 to P15 with exposed conductive films are formed on the upper surface of the sensor chip 100. By connecting the bonding pads P11 to P15 and the terminal 14 connected to the external electrode 13 of the case 11 with a wire 16, the sensor chip 100 and the external circuit can be connected.
  • a gas reaction film 191 for catalytically burning a combustible gas and a reference film 192 for comparison are provided on the upper surface of the sensor chip 100.
  • the combustible gas passes through the cap 12 and reaches the sensor chip 100, the combustible gas is catalytically combusted in the gas reaction film 191, and an amount of heat corresponding to the concentration of the combustible gas is generated. Therefore, the temperature of the gas reaction membrane 191 increases according to the concentration of the combustible gas.
  • the reference film 192 does not increase in temperature due to catalytic combustion.
  • the temperature difference between the gas reaction film 191 that rises in temperature by catalytic combustion of the combustible gas and the reference film 192 that does not rise in temperature due to the combustible gas is obtained, so that the combustible gas in the atmosphere is obtained. Concentration can be measured.
  • the sensor chip 100 since the sensor chip 100 has a function of detecting gas in the sensor module 10, it can be said that the sensor chip 100 is a gas sensor itself. Therefore, hereinafter, the sensor chip 100 is simply referred to as “gas sensor 100”.
  • Gas sensor: 2A and 2B are diagrams illustrating the configuration of the gas sensor 100 according to the first embodiment.
  • 2A shows the gas sensor 100 as viewed from above
  • FIG. 2B shows a cross section of the gas sensor 100 taken along line AA in FIG. 2A.
  • the gas sensor 100 includes a substrate 110 provided with a cavity 119, an insulating film 120 formed on the upper surface of the substrate 110, and a mask film 101 formed on the lower surface of the substrate 110 and provided with an opening 109. Yes.
  • On the insulating film 120 a plurality of films (functional films) forming a structure (described later) for realizing a gas detection function are stacked.
  • the n-type semiconductor film 130, the first interlayer insulating film 140, the p-type semiconductor film 150, the second interlayer insulating film 160, the conductive film 170, and the protection are formed on the insulating film 120.
  • the film 180 and the gas reaction film 191 or the reference film 192 are laminated in this order.
  • the n-type and p-type semiconductor films 130 and 150, the first and second interlayer insulating films 140 and 160, the conductive film 170, and the protective film 180 are used as a method for manufacturing a semiconductor device. It can be formed using a known technique. Note that the insulating film 120, the mask film 101, and each functional film stacked on the insulating film 120 are appropriately added or omitted depending on the contents of the manufacturing process.
  • a silicon (Si) substrate having no cavity 119 is prepared.
  • the insulating film 120 is formed by depositing silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), and SiO 2 in this order on the upper surface of the prepared Si substrate.
  • a mask film (not shown) having no opening 109 is formed on the lower surface of the Si substrate by depositing SiO 2 and Si 3 N 4 in this order in accordance with the formation of the insulating film 120.
  • the insulating film 120 and the mask film may be a single layer film of silicon oxynitride (SiON) instead of a multilayer film of SiO 2 and Si 3 N 4 .
  • an n-type semiconductor film 130 is formed by depositing and patterning n-type polysilicon.
  • various semiconductors such as single crystal silicon, iron silicide (FeSi 2 ), silicon germanium (SiGe), or bismuth antimony (BiSb) may be used instead of polysilicon. good.
  • SiO 2 is formed to form a first interlayer insulating film (not shown) that is not patterned.
  • a p-type semiconductor film 150 is formed by depositing and patterning p-type polysilicon.
  • the p-type semiconductor film 150 can be formed using various semiconductors other than polysilicon. It is also possible to reverse the dope types of these two semiconductor films 130 and 150.
  • SiO 2 is formed, and the formed SiO 2 film and the unpatterned first interlayer insulating film are patterned, whereby the first interlayer insulating film 140 and the first interlayer insulating film 140 are formed.
  • Two interlayer insulating films 160 are formed.
  • a conductive film 170 is formed by depositing and patterning platinum (Pt).
  • Pt platinum
  • various metals such as tungsten (W), tantalum (Ta), gold (Au), copper (Cu), aluminum (Al), or Al alloy may be used instead of Pt. good.
  • an adhesion layer made of titanium (Ti) or chromium (Cr) may be formed on at least one surface of the conductive film 170.
  • the damascene method which is a high-cost and complicated process, is used for patterning, which may increase the manufacturing cost of the gas sensor.
  • the material of the conductive film 170 is appropriately selected in consideration of such characteristics.
  • the protective film 180 is formed by depositing and patterning SiO 2 . 2A and 2B, the protective film 180 has five openings 181 to 185 formed by patterning, and the conductive film 170 is exposed in these openings 181 to 185. .
  • a cavity 119 provided in the substrate 110 is formed.
  • an opening 109 is formed in the mask film formed on the lower surface side of the substrate.
  • the cavity 119 is formed by etching the substrate using the mask film 101 provided with the opening 109 as a mask. Etching can be performed by, for example, crystal anisotropic etching using an aqueous solution of tetramethylammonium hydroxide (TMAH) or potassium hydroxide (KOH).
  • TMAH tetramethylammonium hydroxide
  • KOH potassium hydroxide
  • the cavity 119 may be formed by dry etching such as a so-called Bosch process.
  • the membrane 121 with the insulating film 120 exposed on the back surface side is formed. Since the cavity 119 formed on the lower surface of the membrane 121 is difficult to transfer heat, it can be referred to as a low thermal conduction portion. On the other hand, since the substrate 110 easily transfers heat to the outside of the gas sensor 100 such as the case 11 (FIG. 1A), it can be said to be a high thermal conductivity portion.
  • the cavity 119 is formed by etching the substrate from the lower surface side, but the cavity can also be formed by etching the substrate from the upper surface side.
  • a cavity can be formed by providing a through hole in the insulating film 120, the first and second interlayer insulating films 140 and 160, and the protective film 180 and etching the substrate through the through hole. .
  • the gas sensor can be manufactured only by processing from the upper surface side of the substrate, and the remaining portion of the substrate can be increased compared to the case where the remaining portion is etched from the lower surface side.
  • etching the substrate from the upper surface side in that the manufacturing process of the gas sensor can be simplified to increase the yield, and the strength of the substrate after etching can be further increased.
  • etching from the lower surface side of the substrate can form a cavity without providing a through hole in the insulating film 120, so that the strength of the through hole formed in the membrane is suppressed and the membrane is damaged. It is preferable at the point which can suppress.
  • the hollow portion is not necessarily provided in the substrate.
  • a cavity can be formed between the substrate 110 and the insulating film 120 or between the insulating film 120 and the n-type semiconductor film 130 and the first interlayer insulating film 140.
  • each functional film up to the protective film is formed as described above, and then the upper surface of the protective film is formed.
  • the through hole reaching the sacrificial film is provided, and the sacrificial film is removed through the through hole.
  • a resin such as polyimide or a semiconductor such as polysilicon can be used as a material for forming the sacrificial film.
  • a gas reaction film 191 and a reference film 192 are formed on the protective film 180 located above the cavity portion 119 (low thermal conductivity portion). Specifically, in a region where the gas reaction film 191 and the reference film 192 are formed, a paste containing alumina particles carrying Pt fine particles as a combustion catalyst, and a paste containing alumina particles not carrying a catalyst, respectively Apply.
  • the paste can be applied by using a dispenser coating technique or a screen printing technique.
  • the gas reaction film 191 and the reference film 192 are formed by baking.
  • the gas sensor 100 is obtained by forming the gas reaction film 191 and the reference film 192 on the protective film 180.
  • the combustion catalyst used for the gas reaction film 19 palladium (Pd) fine particles can be used instead of the Pt fine particles.
  • a metal oxide such as copper oxide (CuO) may be mixed in the paste for forming the reference film 192.
  • a combustion catalyst for example, Au ultrafine particles
  • Au ultrafine particles that selectively acts as a catalyst for a specific gas may be supported on the carrier included in the reference film 192. Even in this case, regarding the combustible gas other than the specific gas, it can be said that the combustion catalyst is not supported on the carrier of the reference film 192.
  • FIG. 3A and 3B are a plan view and a cross-sectional view showing a functional configuration of the gas sensor 100 according to the first embodiment.
  • FIG. 3A shows a state where the gas sensor 100 is viewed from the top, as in FIG. 2A.
  • FIG. 3B is an enlarged view of a region R1 surrounded by a two-dot chain line in FIG. 3A. 3A and 3B, for convenience of illustration, the protective film 180, the gas reaction film 191 and the reference film 192 are not hatched, and the entire conductive film 170 (FIGS. 2A and 2B) is shown on the surface. Show.
  • the hot junction connection line 171 constituting the hot junction is disposed under the gas reaction film 191 or the reference film 192.
  • the cold junction connection line 172 constituting the cold junction is disposed on the substrate 110. Therefore, the temperature of the gas reaction film 191 and the reference film 192 can be measured based on the substrate 110 or the case 11 (FIGS. 1A and 1B) having substantially the same temperature as the substrate 110.
  • the hot junctions of the thermopiles T11 to T14 can measure the temperatures of the gas reaction film 191 and the reference film 192, and can also be referred to as temperature measuring elements.
  • the hot junction is formed under the gas reaction film 191 or the reference film 192, respectively.
  • the heaters 132 and 133 are formed of the n-type semiconductor film 130 (FIGS. 2A and 2B), the resistance is made larger than the heater wirings 176 and 177 formed of the conductive film 170. be able to. Therefore, it is possible to sufficiently increase the amount of heat generated in the heaters 132 and 133 and to suppress heat generation in the heater wires 176 and 177. By suppressing heat generation in the heater wirings 176 and 177 in this manner, the power for heating the heaters 132 and 133 can be used more effectively for heating the gas reaction film 191 and the reference film 192. It is possible to save power.
  • the heaters 132 and 133 are formed by the n-type semiconductor film 130 made of polysilicon, the wirings 176, 177, and 178 formed by the conductive film 170 are widened to obtain a current density. Can be suppressed. Therefore, by using Al or an Al alloy as the material of the conductive film 170, it is possible to reduce the manufacturing cost of the gas sensor 100, reduce the size by miniaturization, and improve the accuracy and yield. Further, since the heater 130 is formed of the n-type semiconductor film 130 having a thermal expansion coefficient close to that of the membrane 121, even if pulse driving is performed in which current is intermittently supplied to the heaters 132 and 133, the heaters 132 and 133 and the membrane 121.
  • the membrane 121 is cracked due to the fluctuation of the film stress generated between the heater and the film, or the film peeling in which the heaters 132 and 133 are peeled off from the membrane 121 is suppressed. Therefore, it becomes easier to save power by performing pulse driving.
  • Second embodiment are diagrams showing the configuration of the gas sensor 200 in the second embodiment.
  • 4A shows the gas sensor 200 as viewed from above
  • FIG. 4B shows a cross section of the gas sensor 200 along the cutting line BB in FIG. 4A.
  • the gas sensor 200 according to the second embodiment is manufactured in the same manner as the gas sensor 100 according to the first embodiment.
  • the p-type semiconductor film 150 (FIGS. 2A and 2B) and the n-type semiconductor are changed in accordance with a change in functional configuration to be described later.
  • the interlayer insulating film 140 between the film 130 and the p-type semiconductor film 150 is omitted, and the cavity 219 is formed by a so-called Bosch process.
  • Other manufacturing steps are the same as those of the gas sensor 100 of the first embodiment.
  • a p-type semiconductor film may be used instead of the n-type semiconductor film 230.
  • FIG. 5A and 5B are diagrams illustrating a functional configuration of the gas sensor 200 according to the second embodiment.
  • FIG. 5A shows a state where the gas sensor 200 is viewed from above, as in FIG. 4A.
  • FIG. 5B is an enlarged view of a region R2 surrounded by a two-dot chain line in FIG. 5A. 5A and 5B, for convenience of illustration, the protective film 280, the gas reaction film 291 and the reference film 292 are not hatched, and the entire conductive film 270 (FIGS. 4A and 4B) appears on the surface. Show.
  • the gas sensor 200 in the second embodiment is different from the gas sensor 100 in the first embodiment in the following points.
  • the thermopile T21 to T24 includes an n-type thermoelectric element 231 and a metal thermoelectric element 279 formed on the n-type thermoelectric element 231.
  • the metal thermoelectric element 279 and the n-type thermoelectric element 231 stacked above and below are connected via a contact hole H21 formed in the interlayer insulating film 260 (FIGS. 4A and 4B).
  • the metal thermoelectric element 279 and the adjacent n-type thermoelectric element 231 are connected via a contact hole H22.
  • connection part between the metal thermoelectric element 279 and the n-type thermoelectric element 231 in the contact hole H21 functions as a hot junction
  • connection part between the metal thermoelectric element 279 and the n-type thermoelectric element 231 in the contact hole H22 serves as a cold junction.
  • the heaters MH ⁇ b> 1 and MH ⁇ b> 2 are formed in a narrow and narrow line shape, and a contact hole H ⁇ b> 26 is provided in the interlayer insulating film 260 at the end position.
  • a contact hole H ⁇ b> 26 is provided in the interlayer insulating film 260 at the end position.
  • Each of the heaters MH1 and MH2 is connected to the heater wires 234 and 235 through the contact hole H26.
  • One of the heater wires 234 and 235 is connected to the heater energizing electrode 275 through a contact hole H27 provided in the interlayer insulating film 260 above the heater energizing electrode 275.
  • the other heater wiring 235 includes a ground wiring 278 extending to a position substantially symmetrical with the heater energizing electrode 275 with respect to the central axis C2, and a contact hole H28 formed substantially symmetrical with the contact hole H27 with respect to the central axis C2. Connected through.
  • the contact hole H26 for connecting the heater wires 234 and 235 and the heaters MH1 and MH2 is disposed on the membrane 221, and the heater wires 234 and 235 and the heater energizing electrode 275 are provided.
  • contact holes H27 and H28 for connecting to the ground wiring 278 are arranged on the substrate 210 (FIGS. 4A and 4B). Therefore, the heater wires 234 and 235 are arranged so as to straddle the substrate 210 and the membrane 221.
  • the heater wires 234 and 235 that straddle the substrate 210 and the membrane 221 are formed of the n-type semiconductor film 230 having a lower thermal conductivity than the conductive film 270. Heat generated by catalytic combustion of the combustible gas in the gas reaction film 191 is suppressed from being transmitted to the substrate 210 via the heater wires 234 and 235. Therefore, it is possible to increase the amount of temperature increase accompanying catalytic combustion of the combustible gas, and to further increase the detection sensitivity of the combustible gas.
  • thermopiles T11 to T14 configured by connecting the n-type and p-type thermoelectric elements 131 and 151 by the hot junction connection line 171 and the cold junction connection line 172 are used.
  • thermopiles T21 to T24 configured by connecting to the n-type thermoelectric element 231 and the metal thermoelectric element 279 are used.
  • it is preferable that at least one of the two thermoelectric elements constituting the thermopile is formed of a semiconductor in that the thermoelectromotive force can be increased and the sensitivity of the gas sensor can be further increased.
  • the reference film including the carrier that does not carry the combustion catalyst is formed.
  • the formation of the reference film may be omitted.
  • the temperature measuring element of the compensation unit may be formed in the vicinity of the heater so as to measure the temperature of the heater whose temperature is close to the gas reaction film.
  • the heater of the compensation unit is formed in a region including the vicinity of the temperature measuring element of the compensation unit.
  • the reference film is formed in that the heat capacity of the region formed by each of the reference film and the gas reaction film can be made closer, and the decrease in the detection accuracy of the combustible gas due to the influence of the airflow and the like can be suppressed. Is preferred.

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Abstract

L'invention concerne un capteur de gaz de type à combustion catalytique qui détecte les gaz inflammables, et qui possède : une partie à faible conduction thermique ainsi qu'une partie à forte conduction thermique ; et une partie de détection de gaz qui possède un élément chauffant de film réactif formé sur la partie à faible conduction thermique, un film réactif au gaz formé sur l'élément chauffant de film réactif sur la partie à faible conduction thermique, et contenant un support pour supporter un catalyseur de combustion de gaz inflammable, et un élément de mesure de température formé à proximité du film réactif au gaz sur la partie à faible conduction thermique. Dans ce capteur de gaz de type à combustion catalytique, au moins une partie de l'élément chauffant de film réactif, et d'une région sur une partie à faible conduction thermique d'un câblage d'élément chauffant de film réactif se prolongeant de la partie à forte conduction thermique vers l'élément chauffant de film réactif, et destiné à faire passer le courant dans ce dernier, est formée au moyen d'un matériau conducteur à base de silicium.
PCT/JP2016/053576 2015-02-17 2016-02-05 Capteur de gaz de type à combustion catalytique Ceased WO2016132935A1 (fr)

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JP2015028729A JP2016151472A (ja) 2015-02-17 2015-02-17 接触燃焼式ガスセンサ
JP2015-028729 2015-02-17

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KR102630480B1 (ko) 2016-10-06 2024-01-31 엘지전자 주식회사 센서

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CN110998303A (zh) * 2017-08-10 2020-04-10 国际商业机器公司 低功率可燃气体感测
JP2020529609A (ja) * 2017-08-10 2020-10-08 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 可燃性ガス・センサ、検知装置、および可燃性ガスを検知する方法
JP7137283B2 (ja) 2017-08-10 2022-09-14 インターナショナル・ビジネス・マシーンズ・コーポレーション 可燃性ガス・センサ、検知装置、および可燃性ガスを検知する方法

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