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WO2016125451A1 - Dispositif capteur de pression - Google Patents

Dispositif capteur de pression Download PDF

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Publication number
WO2016125451A1
WO2016125451A1 PCT/JP2016/000369 JP2016000369W WO2016125451A1 WO 2016125451 A1 WO2016125451 A1 WO 2016125451A1 JP 2016000369 W JP2016000369 W JP 2016000369W WO 2016125451 A1 WO2016125451 A1 WO 2016125451A1
Authority
WO
WIPO (PCT)
Prior art keywords
diaphragm
protective member
side wall
sensor device
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2016/000369
Other languages
English (en)
Japanese (ja)
Inventor
晋司 川野
和明 馬渡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of WO2016125451A1 publication Critical patent/WO2016125451A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Definitions

  • the present disclosure relates to a pressure sensor device having a sensor chip in which the bottom of the recess is formed as a diaphragm by forming a recess, and the diaphragm receives pressure from the recess.
  • a pressure sensor device is a plate-shaped chip made of a semiconductor, and a sensor chip in which a bottom is formed as a diaphragm having a pressure detection function by forming a recess on one surface.
  • a pressure sensor device pressure is detected by exposing the diaphragm to a pressure medium such as air or oil on the concave side.
  • the pressure medium such as air or oil contains foreign matters such as water and oil, or impurities such as soot, dust and precipitates, these foreign matters may adhere to the diaphragm from the concave side. If foreign matter adheres to the bottom of the diaphragm, that is, the bottom of the concave portion, it affects the distortion characteristics due to the pressure received by the diaphragm and causes the sensing function to deteriorate.
  • the inventor of the present application has studied to cover the surface of the concave portion in contact with the pressure medium in the diaphragm with a liquid repellent or lyophilic protective member for the purpose of suppressing adhesion of foreign matter.
  • the bottom of the recess corresponding to the diaphragm and the side wall located around the bottom of the recess are protected more liquid-repellent or more lyophilic than the surface of the recess (for example, a semiconductor). Cover with a member.
  • the liquid repellency of the protective member is a property that easily repels liquid such as water or oil
  • the lyophilic property is a property that the liquid is easily wetted.
  • the wettability of such a protection member what is necessary is just to determine according to the flow method and type of the pressure medium which contacts a recessed part.
  • the pressure medium itself is a liquid
  • the recess is in an environment where the recess is easily exposed to the liquid
  • the protective member is liquid repellent, the liquid is repelled, so that the cleaning with the liquid becomes insufficient.
  • the protective member may be made lyophilic.
  • the protective member itself is a harsh environment that is directly exposed to the pressure medium, so that the protective member is peeled off. There is a risk.
  • a pressure sensor device is a plate-like chip, and includes a sensor chip in which a bottom portion of the concave portion is a diaphragm as a thin portion having a pressure detection function by providing a concave portion on a first surface. .
  • Pressure detection is performed by exposing the diaphragm to a pressure medium on the concave side.
  • the bottom part corresponding to the diaphragm in the concave part and the side wall part located around the bottom part in the concave part are covered with a protective member having higher liquid repellency or lyophilicity than the surface of the concave part.
  • Concavity and convexity treatment is performed only on the surface of the sidewall portion of the bottom portion and the sidewall portion, and a protective member is provided on the surface subjected to the unevenness treatment on the sidewall portion.
  • the surface of the side wall portion of the surface of the concave portion that forms the diaphragm is a surface subjected to uneven processing, and the protective member is formed on this surface. Is exerted, or the adhesion area of the protective member is improved due to the unevenness. Further, since the surface of the bottom corresponding to the diaphragm is not subjected to the uneven process, no adverse effect on the characteristics of the diaphragm occurs.
  • FIG. 1 is a schematic cross-sectional view illustrating a pressure sensor device according to a first embodiment of the present disclosure.
  • FIG. 2 is an enlarged view of a portion II in FIG.
  • FIG. 3 is a schematic plan view illustrating a main part of the pressure sensor device according to the second embodiment of the present disclosure.
  • FIG. 4 is a schematic plan view illustrating a main part of the pressure sensor device according to the third embodiment of the present disclosure.
  • a pressure sensor device 1 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 and 2.
  • the pressure sensor device 1 detects, for example, the pressure of intake air taken into the engine, the detection of exhaust gas pressure such as an EGR (Exhaust Gas Recirculation) system, and the oil that lubricates each part of the engine. Applied to pressure detection.
  • EGR exhaust Gas Recirculation
  • the pressure sensor device 1 mainly includes a sensor chip 2, a circuit chip 3, a bonding wire 4, a lead frame 5, and a mold resin 6.
  • the sensor chip 2 is a plate-shaped chip made of a semiconductor and is formed by a normal semiconductor process.
  • the sensor chip 2 is formed into a flat plate shape by bonding two substrates formed in a flat plate shape, that is, the first substrate 21 and the second substrate 22 by direct bonding or the like, thereby forming a sensor element or the like.
  • IC chip the first substrate 21 is made of a semiconductor such as silicon
  • the second substrate 22 is made of a semiconductor, glass, or the like.
  • the sensor chip 2 typically has a rectangular plate shape whose longitudinal direction is the left-right direction in FIG.
  • the sensor chip 2 has one surface 2a and another surface 2b opposite to the one surface 2a, and has one end 2c and the other end 2d as both ends in the longitudinal direction.
  • the first substrate 21 has one surface 2 a and the second substrate 22 has the other surface 2 b.
  • a diaphragm 21a as a thin part which is a sensing part having a pressure detection function is provided on one end 2c side of the one surface 2a of the sensor chip 2.
  • the diaphragm 21a is provided with a resistor (not shown).
  • the diaphragm 21a has a thickness of about 10 ⁇ m, for example.
  • the diaphragm 21 a is configured by forming a recess 21 b on one surface 2 a of the sensor chip 2 and forming a thin portion on the first substrate 21.
  • the recess 21b is formed on the first substrate 21 by etching or the like, and the inner surface thereof includes a bottom portion 21c and a side wall portion 21d positioned around the bottom portion 21c.
  • the diaphragm 21a is configured to correspond to the bottom 21c of the recess 21b in the first substrate 21.
  • the recess 21b has a depth of about 250 ⁇ m, for example.
  • a pressure medium such as air or oil is applied to the diaphragm 21 a from the one surface 2 a side of the sensor chip 2, that is, from the concave portion 21 b side of the first substrate 21. It comes to contact. That is, the bottom 21c of the recess 21b is a pressure receiving surface that receives pressure from the pressure medium in the diaphragm 21a.
  • the diaphragm 21a When the pressure is applied by the pressure medium, the diaphragm 21a outputs an electrical signal corresponding to the pressure by utilizing the change in the internal resistance of the resistance due to, for example, a piezoresistance effect. Yes.
  • the electrical signals output from the diaphragm 21a are sequentially transmitted to the circuit chip 3 and the lead portion 52 of the lead frame 5, and finally transmitted to the outside of the pressure sensor device 1.
  • a recess is formed in a region facing the diaphragm 21a on the surface 22a opposite to the surface 2b of the sensor chip 2 of the second substrate 22. Accordingly, a pressure reference chamber 7 is provided.
  • the pressure reference chamber 7 applies a reference pressure for pressure detection to the diaphragm 21a, and is a constant pressure such as a vacuum pressure or an atmospheric pressure.
  • a pad 23 as an electrical connection portion is provided on the other end 2d side of the other surface 2b of the sensor chip 2.
  • the pad 23 is made of aluminum or the like formed by vapor deposition or sputtering.
  • One surface 2a of the sensor chip 2 is also referred to as a first surface, and the other surface 2b is also referred to as a second surface.
  • the bottom 21c of the recess 21b serves as a diaphragm 21a as a thin part having a pressure detection function.
  • the recess 21b has the following unique configuration.
  • the bottom 21c corresponding to the diaphragm 21a in the recess 21b and the side wall 21d located around the bottom 21c in the recess 21b are covered with the protective film 8 as a protective member. Has been.
  • the protective film 8 is a film having a greater liquid repellency than the surface of the recess 21b, or a film having a greater lyophilic property than the surface of the recess 21b.
  • the liquid-repellent film is a film having higher liquid repellency than the semiconductor constituting the sensor chip 2, here the semiconductor constituting the first substrate 21, and the lyophilic film is The film is more lyophilic than the semiconductor.
  • the liquid repellent film and the lyophilic film in the present embodiment are defined by the contact angle as described below.
  • the contact angle measurement is performed with a liquid to be lyophobic in an environment where the pressure sensor device is used.
  • the liquid repellent target is water
  • it is defined by the contact angle with water.
  • the liquid repellent target is oil (that is, in the case of oil repellent treatment)
  • the contact angle with oil is determined. Defined by The same applies to cases other than water and oil.
  • the liquid-repellent film has a contact angle of 90 ° or more, and the larger the angle is, the better the liquid-repellent property.
  • the lyophilic film has a contact angle of less than 90 °, and the smaller the angle is, the better the lyophilic property.
  • the difference in contact angle between the liquid repellent film and the lyophilic film is preferably 50 ° or more.
  • the protective film 8 is the same coating that covers the bottom 21c and the side wall 21d, that is, the entire surface of the recess 21b. This film is formed on the semiconductor so as to cover the semiconductor constituting the first substrate 21 in the sensor chip 2.
  • the liquid-repellent film as the protective film 8 is a film made of, for example, an organic fluorine compound
  • the lyophilic film is a coating film made of, for example, a silica-based coating film or an organic hydrophilizing agent, or the like. It consists of a coating film such as DLC (Diamond Like Carbon).
  • DLC Diamond Like Carbon
  • the above-mentioned material of the protective film 8 having liquid repellency or lyophilicity is a material that does not obstruct the distortion characteristics of the diaphragm 21a, such as a low elastic modulus, excellent heat resistance, and chemical resistance. It is selected from the point that it is a material having the following characteristics.
  • the surface of the recess 21b that is the base of the protective film 8 is subjected to unevenness processing only on the surface of the side wall 21d among the bottom 21c and the side wall 21d.
  • the unevenness treatment is performed only on the surface of the sidewall portion 21d among the surfaces of the bottom portion 21c and the sidewall portion 21d made of a semiconductor, and the unevenness treatment is not performed on the surface of the bottom portion 21c.
  • the surface of the side wall 21d is an uneven surface 21e that is an uneven surface, and a protective film 8 is formed on the uneven surface 21e so as to cover the uneven surface 21e.
  • the recess 21b is formed by subjecting the first substrate 21 to plasma etching, wet etching, or the like.
  • corrugated processed surface 21e in the side wall part 21d is formed by processing the surface of the side wall part 21d selectively by plasma etching, laser irradiation, sandblasting, etc.
  • the selective processing can be realized by using a mask, for example.
  • corrugated process surface 21e is a surface whose Ra (arithmetic mean roughness specified by JIS (Japanese Industrial Standards)) is 50 nm or more and 10,000 nm or less, for example.
  • the size of the unevenness is deformed for easy understanding.
  • the circuit chip 3 is an IC chip that is formed in a flat plate shape using a silicon semiconductor or the like to form a semiconductor integrated circuit.
  • the circuit chip 3 is electrically connected to the sensor chip 2 and controls pressure detection by the sensor chip 2, for example.
  • the circuit chip 3 is disposed so as to face the other end 2 d of the sensor chip 2.
  • the pads 23 of the sensor chip 2 and the circuit chip 3 are connected and electrically connected via bonding wires 4 made of Au, Al or the like.
  • the lead frame 5 includes an island portion 51 for supporting the sensor chip 2 and the circuit chip 3, and a lead portion 52 electrically connected to the circuit chip 3 through the bonding wires 4. And made of Cu, 42 alloy, or the like.
  • the circuit chip 3 is fixed to the island portion 51 via a die mount material 3a such as solder or conductive adhesive.
  • the mold resin 6 is a member that seals a part of the sensor chip 2 on the other end 2d side, the circuit chip 3, the bonding wire 4, the island part 51, and the lead part 52.
  • the mold resin 6 is made of a general epoxy resin or the like, and is molded by a transfer mold method using a mold or the like.
  • the above is the overall configuration of the pressure sensor device 1 according to the present embodiment.
  • the pressure sensor device 1 having such a configuration, when the pressure medium is introduced into the recess 21b and pressure is applied to the diaphragm 21a, the pressure of the pressure medium can be measured by the diaphragm 21a.
  • a pressure medium such as air or oil is introduced into the diaphragm 21a from the side of the recess 21b and received by the diaphragm 21a, as indicated by the white arrow in FIG. At this time, in the pressure medium, impurities such as water and oil or soot contained in the water and oil are mixed as foreign matters.
  • the surface of the diaphragm 21a on the side of the recess 21b that contacts the pressure medium, that is, the bottom 21c and the side wall 21d are covered with the liquid-repellent or lyophilic protective film 8; Foreign matter adhesion is suppressed.
  • the protective film 8 when the pressure medium is a gas such as air, the protective film 8 is made liquid repellent so that water or oil in the pressure medium or foreign matters such as impurities adhere to the protective film 8. It becomes difficult to do.
  • the protective film 8 when the pressure medium is a liquid such as oil or when the concave portion 21b is in an environment where it is easily exposed to the liquid, the protective film 8 is made lyophilic. By doing so, the foreign substance adhering to the protective film 8 can be washed away using the liquid, and the adhesion of the foreign substance to the protective film 8 can be suppressed.
  • the surface of the side wall portion 21d of the surface of the recess 21b forming the diaphragm 21a is the uneven surface 21e, and the protective film 8 is formed on the surface 21e.
  • the adhesion of the protective film 8 is improved by the anchor effect being exerted or by increasing the adhesion area due to the unevenness.
  • the Ra (arithmetic mean roughness specified in JIS (Japanese Industrial Standard)) of the uneven surface 21e is preferably equal to or less than the film thickness of the protective film 8. In this case, the anchor effect due to the unevenness can be further expected.
  • the protective film 8 is desirably a film thinner than the diaphragm 21a, and is, for example, as thin as several ⁇ m. This is because, when these films are formed on the bottom 21c of the recess 21b, which is the diaphragm 21a, it is possible to suppress the influence on the distortion characteristics of the diaphragm 21a by reducing the film thickness as much as possible. .
  • the protective film 8 is the same film that covers the bottom 21c and the side wall 21d. However, the protective film 8 is wetted by the bottom 21c and the side wall 21d, which are the surfaces of the recesses 21b. It may be configured as a film having different properties.
  • the protective film 8 as a protective member covers the bottom 21c and has a liquid repellent protective film 81 having a higher liquid repellency than the surface of the recess 21b, and a side wall 21d. And a lyophilic protective film 82 having a higher lyophilic property than the surface of the recess 21b.
  • a lyophilic protective film 82 is formed on the uneven surface 21e.
  • the liquid repellent protective film 81 as the protective film 8 is a film made of, for example, an organic fluorine compound
  • the lyophilic protective film 82 is a coating film made of, for example, a silica-based coating film or an organic hydrophilic agent. Or a coating film such as DLC.
  • the foreign matter 100 is preferentially attached to the side wall portion 21d that is not the pressure receiving surface of the diaphragm 21a in the recess 21b, thereby preventing the foreign matter 100 from adhering to the bottom portion 21c that is the pressure receiving surface. It is the composition suitable for.
  • the pressure medium is a gas such as air
  • the foreign matter 100 such as water or oil in the pressure medium or the impurities described above is formed on the bottom 21c made liquid repellent by the liquid repellent protective film 81. Without adhering, it adheres preferentially to the side wall part 21d made lyophilic by the lyophilic protective film 82.
  • the pressure medium is a liquid such as oil
  • the foreign matter 100 such as the impurities in the pressure medium does not adhere to the bottom part 21c that is lyophobic and takes precedence over the side wall part 21d that is lyophilic. Adheres.
  • the foreign matter 100 can be preferentially attached to the side wall portion 21d rather than the bottom portion 21c according to the flow method and type of the pressure medium. Adhesion to the bottom 21c is preferable because it easily affects the characteristics of the diaphragm 21a as compared to the side wall 21d.
  • the third embodiment of the present disclosure is a modification of the second embodiment, and the pressure sensor device according to the present embodiment will be described with reference to FIG. 4, focusing on differences from the second embodiment. I will do it.
  • the surface of the bottom 21c of the recess 21b is covered with the liquid-repellent protective film 81, and the surface of the side wall 21d that is the uneven surface 21e is covered with the lyophilic protective film 82.
  • the bottom 21c is covered with a lyophilic protective film 82, and the uneven side wall 21d is repelled.
  • the structure is covered with a liquid protective film 81.
  • the protective film 8 as the protective member covers the bottom portion 21c, covers the lyophilic protective film 82 having higher lyophilicity than the surface of the concave portion 21b, and the side wall portion 21d, and forms the concave portion 21b.
  • a liquid repellent protective film 81 having a liquid repellency greater than that of the surface.
  • a liquid repellent protective film 81 is formed on the uneven surface 21e.
  • the pressure sensor device of this embodiment having such a configuration is preferably applied when a liquid such as oil or water is used as a pressure medium.
  • the liquid as the pressure medium flows so as to wash away the lyophilic protective film 82 of the lyophilic bottom portion 21c without being repelled. , It becomes difficult to adhere to the bottom 21c. Therefore, according to the present embodiment, foreign matter can be preferentially attached to the side wall 21d rather than the bottom 21c of the recess 21b, as in the second embodiment.
  • the thing of a lump shape for example, a gel etc.
  • the thing of a lump shape for example, a gel etc.
  • the protective films 8, 81, and 82 which are films.
  • a water-repellent gel fluorine gel and the like can be mentioned, and these are formed by coating or the like, as in a normal gel.
  • the sensor chip 2 is a plate-shaped chip, and the recess 21b is formed on the one surface 2a so that the bottom 21c of the recess 21b is a diaphragm 21a. It is not limited to things.
  • the sensor chip 2 has a stacked configuration of the first substrate 21 and the second substrate 22, but the second substrate 22 is omitted and the recess 21b and the diaphragm 21a are formed. It may be composed only of the first substrate 21 having the same.
  • any sensor chip 2 may be used as long as the surface on the recess 21b side of the diaphragm 21a is exposed to a pressure medium to receive pressure.
  • the recess 21 b and the diaphragm 21 a are provided on the one end 2 c side of the sensor chip 2, and the other end 2 d side opposite to the one end 2 c of the sensor chip 2 is sealed with the mold resin 6. It has been stopped.
  • the pressure sensor device may have a configuration in which the mold resin 6 is omitted.
  • One end 2c of the sensor chip 2 is also called a first end, and the other end 2d is also called a second end.
  • the entire sensor chip 2 may be exposed.
  • the pressure medium introduction path may be configured such that the pressure medium is introduced only into the concave portion 21b side of the diaphragm 21a.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne un dispositif capteur de pression comprenant une puce de capteur (2) qui est une puce en forme de plaque et qui est pourvue d'une concavité (21b) dans une première surface de celle-ci, moyennant quoi une portion inférieure (21c) de la concavité sert de membrane (21a) qui est une portion mince ayant une fonction de détection de pression. La pression est détectée en exposant la membrane à un fluide sous pression du côté de la concavité. La portion inférieure de la concavité correspondant à la membrane, et une portion de paroi latérale (21d) de la concavité située dans la périphérie de la portion inférieure, sont recouvertes d'un élément de protection (8) qui possède une propriété hydrophobe supérieure ou une propriété lyophile supérieure à celle de la surface de la concavité. Un traitement d'irrégularité est effectué uniquement sur la surface de la portion de paroi latérale, en dehors de la portion inférieure et de la portion de paroi latérale, et l'élément de protection est réalisé au niveau d'une surface (21e) de la portion de paroi latérale ayant été soumise au traitement d'irrégularité.
PCT/JP2016/000369 2015-02-04 2016-01-26 Dispositif capteur de pression Ceased WO2016125451A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-020068 2015-02-04
JP2015020068A JP6492708B2 (ja) 2015-02-04 2015-02-04 圧力センサ装置

Publications (1)

Publication Number Publication Date
WO2016125451A1 true WO2016125451A1 (fr) 2016-08-11

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PCT/JP2016/000369 Ceased WO2016125451A1 (fr) 2015-02-04 2016-01-26 Dispositif capteur de pression

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JP (1) JP6492708B2 (fr)
WO (1) WO2016125451A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10983022B2 (en) * 2016-09-06 2021-04-20 Denso Corporation Pressure sensor
JP2021162557A (ja) * 2020-04-03 2021-10-11 アズビル株式会社 圧力センサ素子および圧力センサ

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6555214B2 (ja) 2016-08-25 2019-08-07 株式会社デンソー 圧力センサ
JP7073881B2 (ja) * 2018-04-20 2022-05-24 株式会社デンソー 物理量センサおよびその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07326770A (ja) * 1991-07-12 1995-12-12 Terumo Corp 半導体圧力センサおよびその製造方法
JPH10185721A (ja) * 1996-12-25 1998-07-14 Matsushita Electric Works Ltd 半導体圧力センサの製造方法
JP2009505088A (ja) * 2005-08-16 2009-02-05 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 基板とケーシングとを備えたセンサ配置構造およびセンサ配置構造を製造する方法
WO2009041463A1 (fr) * 2007-09-25 2009-04-02 Alps Electric Co., Ltd. Capteur de pression à semi-conducteur
JP2010071680A (ja) * 2008-09-16 2010-04-02 Nissan Motor Co Ltd 圧力検出センサ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07326770A (ja) * 1991-07-12 1995-12-12 Terumo Corp 半導体圧力センサおよびその製造方法
JPH10185721A (ja) * 1996-12-25 1998-07-14 Matsushita Electric Works Ltd 半導体圧力センサの製造方法
JP2009505088A (ja) * 2005-08-16 2009-02-05 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 基板とケーシングとを備えたセンサ配置構造およびセンサ配置構造を製造する方法
WO2009041463A1 (fr) * 2007-09-25 2009-04-02 Alps Electric Co., Ltd. Capteur de pression à semi-conducteur
JP2010071680A (ja) * 2008-09-16 2010-04-02 Nissan Motor Co Ltd 圧力検出センサ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10983022B2 (en) * 2016-09-06 2021-04-20 Denso Corporation Pressure sensor
JP2021162557A (ja) * 2020-04-03 2021-10-11 アズビル株式会社 圧力センサ素子および圧力センサ
JP7736425B2 (ja) 2020-04-03 2025-09-09 アズビル株式会社 圧力センサ素子および圧力センサ

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