WO2016124632A1 - Conversion element, optoelectronic component, and corresponding manufacturing method - Google Patents

Abstract

The invention relates to a conversion element which can be arranged on a pixelated, radiation-emitting semiconductor chip. The conversion element has a backing layer, a conversion layer, and an intermediate layer arranged between the backing layer and the conversion layer. The backing layer has a radiation-permeable backer material. The conversion layer has a conversion material for radiation conversion. The intermediate layer has an intermediate layer material having a refractive index which is smaller than a refractive index of the backer material and a refractive index of the conversion material. The invention further relates to an optoelectronic component having a pixelated, radiation-emitting semiconductor chip and a conversion element, and to a method for producing a conversion element.

Description

 CONVERSION ELEMENT, OPTOELECTRONIC COMPONENT AND CORRESPONDING MANUFACTURING METHOD

DESCRIPTION

The invention relates to a conversion element which can be arranged on a pixelated radiation-emitting semiconductor chip. The invention further relates to an optoelectronic component having a pixelated radiation-emitting semiconductor chip and a conversion element, and to a method for producing a conversion element.

This patent application claims the priority of German Patent Application 10 2015 101 573.0, the disclosure of which is hereby incorporated by reference.

Conventional headlights in the automotive sector are rigid units of lighting, optics and body, with which only a central area in front of a vehicle can be illuminated. The focus of recent developments is the targeted control of the light distribution. Examples of this are the so-called light curve or by any adjusting the light distribution is made possible to the driving situation and camera-based Sys ^¬ tems. This includes, for example, dimming the left side of the high beam for oncoming traffic, whereas the right side is not changed for optimal illumination. Such systems are also referred to as Adaptive Front Lighting Systems (AFS).

An adaptive lighting system can be realized with the aid of individually controllable light emitting diodes or LED light sources (light emitting diode). Another approach that is currently being developed is the use of a radiation-emitting LED chip with a multiplicity of individually controllable radiation-emitting regions (pixels). Such a pixelated semiconductor chip may have a semiconductor surface for emitting radiation which can be driven into smaller ones Units is structured. A system with such a semiconductor chip is also referred to as a yAFS system.

In order to generate white light, a conversion layer for radiation conversion is additionally used on the pixelated semiconductor chip. In such an optoelectronic component, for example, the semiconductor chip for generating a blue light radiation and the conversion layer for partially converting the blue into a yellow light radiation can be formed. A conversion material of Konversi ^¬ onsschicht may comprise a matrix material and the phosphor particles.

A requirement in the operation of a pixelized semiconductor chip provided with a conversion layer is to avoid as far as possible an optical crosstalk to the area of non-luminous pixels, that is to say luminance in the range of non-addressed pixels caused by luminous pixels. This serves to achieve a legally prescribed high contrast between light and shadow areas. Fulfilling this requirement is hampered by effects such as undirected light output from a conversion layer and scattering of phosphor particles. One measure for reducing crosstalk is to form a conversion layer with a small thickness. The flatter the layer is, the smaller the possible ^¬ ness that a light radiation generated in a pixel area to a neighboring pixel area passes. This can be realized by applying the conversion layer directly to a semiconductor chip. The coating can take place at wafer level, ie in a manufacturing state in which semiconductor chips are still present in a composite, or in the mounted state of a semiconductor chip in a housing. This can cause problems such as yield losses and contamination of the housing. The object of the present invention is to provide an improved solution for the conversion of radiation of a pixelized radiation-emitting semiconductor chip. This problem is solved by the features of the independent Pa ^¬ tentansprüche. Further advantageous embodiments of the invention are specified in the dependent claims.

According to one aspect of the invention, a conversion element is proposed, which can be arranged on a pixelated radiation-emitting semiconductor chip. The conversion element has a carrier layer, a conversion layer and a ^¬ arranged between the carrier layer and the conversion layer interlayer. The carrier layer has a radiation-transmissive carrier material. The conversion ^¬ layer has a conversion material for Strahlungskonversi ^¬ on. The intermediate layer comprises an intermediate layer material having a refractive index which is smaller than a refractive index of the carrier material and a refractive index of the conversion material.

The conversion element can come on a pixelated radiation ^¬ emitting semiconductor chip used. Such a semiconductor chip, which may be, for example, a light-emitting diode chip, may have a plurality of individually controllable radiation-emitting regions (pixels). The pixels of the semiconductor chip may be arranged in ei ^¬ nem regular grid. In the conversion element is a Components ^¬ te, which made separately from a semiconductor chip who can ^¬. In the context of the production of an optoelectronic component, the separately manufactured conversion element can be arranged on the semiconductor chip. In the optoelectronic component produced in this way, the conversion layer can be opposite to the semiconductor chip and facing it. The carrier layer may be in the region of ner facing away from the semiconductor chip side of the conversion element.

The separate production makes it possible to avoid contamination, for example, a housing provided for receiving the semiconductor chip or optoelectronic component. Also yield losses can be avoided. For this purpose, the conversion properties of the separately manufactured conversion element can be determined with the aid of a measurement, and based on this, a likewise measured and suitable semiconductor chip can be selected. If necessary, (only) the conversion element can be sorted out, which is more cost-effective than sorting out a semiconductor chip which is incorrectly coated in a direct manner with a conversion layer.

The separate production also offers the possibility to provide ^¬ designs for the conversion element, which can not or only difficult to implement in a direct coating of a semiconductor chip. For example, in the production of the conversion element and a Prozes ^¬ tion can be carried out at a high temperature, which impair a ^¬ supply of semiconductor material of the chip may result in a direct coating of a semiconductor chip.

The carrier layer of the conversion element can provide a high mechanical stability, so that the conversion element is cantilevered. This allows easy handling of the conversion element, for example when arranging the conversion element on a semiconductor chip. Also during manufacturing of the conversion element, the support layer can have a sufficient mechanical stability available stel ^¬ len. Furthermore, the carrier layer can serve as a protective layer for the other layers of the conversion element, as well as in the associated optoelectronic component for the semiconductor chip. In operation of the optoelectronic component, which has the conversion element and the pixelated radiation-emitting semiconductor chip on which the conversion ^{element is} arranged such that the conversion layer faces the semiconductor chip, the semiconductor chip or at least one pixel of the semiconductor chip can emit radiation ( Primary radiation). This can be at least partially converted into a conversion radiation (secondary radiation) with the aid of conversion material of the conversion ^element present in this area. After passing through the intermediate layer and the carrier layer of the conversion element, radiation which may comprise converted and non-converted radiation fractions can be emitted by the conversion element.

Since the refractive index of the radiation-permeable intermediate layer material of the intermediate layer is smaller than the Bre ^¬ monitoring indices of the carrier material, the carrier layer and of the conversion material of the conversion layer can be achieved that a total reflection of radiation predominantly in the area of remote from the semiconductor chip side of the conversion layer occurs. As a result, can be much smaller or negligible small a Totalrefle ^¬ xion of radiation in the region of a side remote from the semiconductor chip side of the carrier layer. The intermediate layer can serve here as an optical isolation layer.

This results in that a lateral propagation of radiation in the carrier layer and thus a radiation conductor function of the carrier layer can be kept small. This makes it possible to achieve that radiation emission during operation of the optoelectronic component is essentially limited to the region of the at least one driven pixel, and optical crosstalk to regions of non-controlled pixels is suppressed with high reliability. Therefore Featuring the conversion element optoelekt ^¬ tronic component can by a low over- speak and have a high contrast between radiation and non-radiation emitting areas.

In the following, further possible details and embodiments are described in more detail.

The refractive index property of the interlayer material, as well as the following values for refractive indices, can refer to the spectral range of visible light, ie the range with wavelengths of about 380 nm to 780 nm.

It is possible that in the intermediate layer and in the Kon ^¬ version layer of the conversion element, a lateral radiation propagation occurs. The configuration of the conversion elements ^¬ with the mechanically stabilizing support layer has in this context, the possibility of the intermediate layer and the conversion layer with small layer thicknesses form. In this way, the lateral radiation propagation in these layers can be reliably attenuated with sufficient scattering, thereby further promoting the suppression of crosstalk. As will be explained in more detail below, layer thicknesses in the single-digit or low two-digit micrometer range can be considered for the intermediate layer and the Kon ^¬ version layer.

The support layer material, the carrier layer may comprise a Bre ^¬ chung index greater than 1.4. Also, the Konversionsma ^¬ TERIAL the conversion layer may have a refractive index GroE SSER than 1.4. Examples of possible materials for the carrier and the conversion layer, which may have such Bre ^¬ deviation indices are given below.

The lower binding of crosstalk can more be better achieved, the smaller the refractive index of the strahlungsdurchläs ^¬ sigen intermediate layer material of the intermediate layer to the refractive indices of the substrate and the conversion ^¬ materials, or in other words, the closer the Bre- index of the interlayer material is the refractive index of air (approximately 1.0). In this sense, according to another embodiment, it is provided that the refractive index of the interlayer material is less than 1.2. The refractive index may in particular be less than 1.1.

In another embodiment, the radiation-transmissive interlayer material is an airgel material. Such a material may have a refractive index close to the refractive index of air or near 1.0, so that the SUPPRESS ^¬ CKEN can be reliably realize crosstalk. This property results from the high porosity of the airgel material, which has a lattice or pore structure with a small solids content and can therefore consist essentially of air or vacuum. The solids content may be based for example on a metal oxide such as Silizi ^¬ environmentally, titanium, zirconium or aluminum oxide.

An airgel material also has a low specific gravity and a low thermal conductivity. The latter feature may prove favorable for equipped with the conversion element optoelectronic Bauele ^¬ ment. Here, an airgel material aufwei ^¬ transmission intermediate layer may cause a thermal insulation, whereby thermal interference between pixel regions in the radiation mode can be suppressed.

In a radiation conversion not only a conversion radiation, but also a heat energy (conversion heat) is generated by means of a Konversi ^¬ onsmaterials. The Kon ^¬ version properties of a conversion material, and thus the color point of a converted and unconverted Strah ^¬ lung shares extensive radiation may be dependent on the prevailing temperature. The configuration of the intermediate layer of airgel material makes it possible that do not substantially spread in the radiation operation, an amount of heat generated in the area of a pixel to adjacent Pi ^¬ xelbereiche, but instead on the semi- conductor chip of the associated optoelectronic component can be removed. As a result, inhomogeneities due to temperature differences can be avoided. In order to achieve that coming from the conversion layer radiation does not tunnel through the intermediate layer in the radiation operation of the optoelectronic ^¬'s device, and thereby can occur in the region facing away from the semiconductor chip of the component side of the conversion layer, the total reflection, in essence, the intermediate layer may have a

 Have layer thickness of at least lym. This thickness may correspond to at least two wavelengths of the radiation.

In order to avoid through-tunneling with a high level of reliability, it is provided according to a further embodiment that the intermediate layer has a thickness in a range from 2ym to 5ym. Such a thickness also provides the Mög ^¬ friendliness to suppress a lateral radiation propagation in the intermediate layer reliably. This is for examples play an advantage in view of the above Starting ^¬ staltung the intermediate layer of airgel material. Here ^¬ at the high porosity of the airgel material with a high inherent scattering can be connected. In a further embodiment, the radiation-permeable carrier material of the carrier layer is a glass material. For example Mög ^¬ Lich is the use of quartz glass. A sol ^¬ ches material may have a relatively small refractive index in the range or slightly above 1.4, whereby it is possible to suppress to the carrier layer surface reflections (Fresnel reflections). This can further promote the prevention of crosstalk. Also, the conversion element can be produced inexpensively. The support layer may for example have a thickness in a range from Be ^¬ lOOym to 200ym. As a result, the carrier layer can have a high stability. It is possible, however a smaller layer thickness below lOOym, the In ^¬ play in the range of 50ym.

With a thickness of the carrier layer below 100 μm, an embodiment of the carrier layer made of a carrier material such as, for example, sapphire may possibly be considered.

Equipped with the conversion element optoelectronic ^¬ specific component can be as stated above by a hen HO contrast between radiation and not Strahlungsemit ^¬ animal border areas are distinguished. Due to this property, the optoelectronic component can be used, for example, in a headlight of an adaptive headlight system. In this case, for example, the pixe- profiled semiconductor chip for generating a primary blue

Light radiation and the conversion element or its conversion layer for partially converting the blue be formed in a secondary yellow light radiation. It is also possible for the conversion layer to provide several secondary light radiations of different spectral ranges, for example a yellow or yellow-green and a red-light radiation, during radiation operation. This may possibly be accompanied by improved color rendering. The different colored (primary and secondary) radiation parts can be superimposed to a white light radiation.

The conversion material may include phosphor particles and a matrix material for fixing the phosphor particles. The phosphor particles may, for example, have a size in the range from 10ym to 15ym.

This makes it possible to achieve high efficiency. However, it is also possible smaller particle sizes, for example in the range of 5ym. The conversion layer can have, depending on the size of the phosphor particles, for example, a layer thickness in the range of 30ym to 50ym or a smaller film thickness on ^¬. As a result, lateral radiation propagation in the conversion layer can be reliably damped. Phosphor particles for producing a yellow or green light radiation can be realized, for example, from a material from the garnet family. These include, for example, with cerium-doped yttrium-aluminum garnet or with gallium or lutetium modified variants. For phosphor particles for generating a red light radiation, for example, materials from the family of nitrides or silicon oxynitrides can be considered. Optionally, the conversion material may additionally comprise scattering ^¬ particles. This makes it possible to further promote the suppression of crosstalk.

The matrix material may be, for example, a silicone material. Such a material can be characterized by a high radiation ^stability with respect to a primary blue light radiation.

The separate production of the conversion element has alternatively the possibility for the conversion material one at a high temperature matrix material prozessiertes vorzuse ^¬ hen. Possible are, for example, a glass material or a ke ^¬ ramisches binder. Such materials may have higher temperature resistance compared to silicone.

Moreover, it is possible because of the separate manufacturing of the conversion element, that the conversion material comprises le ^¬ diglich one or more luminescent materials, and no Mat ^¬ rixmaterial. In this embodiment, the conversion material may be a ceramic-compacted phosphor. Thereby, the conversion layer having a small film thickness smaller than the above-mentioned thickness (30ym to 50ym) can be realized. In addition to the carrier layer, the intermediate layer and the conversion layer, the conversion element can be further

Have layers. An example is a protection layer arranged between the intermediate layer and the conversion layer. Layer. This can be considered, for example, in an embodiment of the intermediate layer of an airgel material, in order to prevent penetration of matrix material of the conversion material into the pore structure of the airgel material in the context of production of the conversion element.

In a further embodiment, the conversion element has at least one antireflection coating. Such an antireflection layer may be in the form of a dielectric

Layer stack be realized. For example, one or more antireflection layers may be arranged on a side of the carrier layer facing away from the intermediate layer, between the carrier layer and the intermediate layer, and / or between the intermediate layer and the conversion layer. With the help of an anti-reflection layer has a Strahlungsre ^¬ flexion (Fresnel reflection) can be suppressed to a surface or boundary surface, which also may prove advantageous for the suppression of crosstalk. In a further embodiment, the intermediate layer additionally has a limiting structure for limiting a lateral radiation propagation. In this way, the suppression of crosstalk can be further promoted. The confinement structure may comprise a radiation absorbing or reflecting material which differs from the intermediate layer material of the intermediate layer which is explained above and which has the refractive index property. When using a reflective material, high efficiency can be provided. An example of an absorbent material is a metal having a low degree of flexion Re ^¬, for example, chromium. With respect to a Reflectors ^¬ animal material, for example a metal such as aluminum or a filled with reflective particles or white pigments or silicone matrix material can be considered.

The boundary structure of the intermediate layer may have a thickness corresponding to the intermediate layer, or may also have a smaller thickness. In the first variant, the delimitation Structure be formed of a reflective material. In the second variant, the limiting structure may be formed of an absorbent material, and relatively flat. Furthermore, the delimiting structure may have at least one structural element, for example an elongated or web-shaped structural element.

In a further embodiment, the boundary structure of the intermediate layer has a plurality of separate recesses. For this purpose, the boundary structure in the form of a grid having a plurality of web-shaped and partially crossing structural elements can be realized. In the recesses of the index of refraction property satisfy ^¬ de interlayer material may be contained. This structure can be matched to the pixelated configuration of the semiconductor chip of the optoelectronic component, that is, to the arrangement of the pixels of the semiconductor chip. By way of example, one or more pixels of the semiconductor chip can each be assigned to the recesses of the delimiting structure.

The conversion layer may also be configured to allow optical confinement. In this sense, according to another embodiment, the conversion layer has a delimiting structure for limiting lateral radiation propagation. In this way the SUPPRESS ^¬ ting crosstalk can be further promoted. The delimiting structure can have a radiation-absorbing or reflective material which differs from the conversion material of the conversion layer used for the radiation conversion. By using a reflec ^¬ Governing material high efficiency can be made possible.

The boundary structure of the conversion layer may be formed of the same materials as mentioned above for the boundary structure of the intermediate layer. Furthermore, the limiting structure may have a thickness ^{corresponding to} the conversion layer or a smaller thickness. In the first variant, the delimiting structure can be derived from a be formed inflective material. In the second variant, the limiting structure may be formed of an absorbent material, and relatively flat. Further, the containment structure at least one structural element, such as an elongated or bar-shaped Strukturele ^¬ ment having.

In a corresponding manner, the limiting structure of the conversion layer can be formed with a plurality of separate recesses. For this purpose, the boundary structure in the form of a grid having a plurality of web-shaped and partially crossing structural elements can be realized. In the recesses conversion material can be included for Radiation ^¬ conversion-. This structure can be adapted to the pixe- profiled design of the semiconductor chip of the optoelectronic component ^¬ rule, so the arrangement of the pixels of the semi ^¬ conductor chips. For example, may be associated with the off ^¬ recesses of the containment structure are each one or even a plurality of pixels of the semiconductor chip.

The conversion element or the associated optoelektroni ^¬ cal device are not only for use in one

Headlamp restricted. A possible example of an alternative application is a display device with the aid of which, for example, information or even advertising messages can be displayed.

For such or other applications, the optoelectronic ^¬ African component may optionally be formed such that can generate a different light from white light. This can be made possible by a suitable embodiment of the Kon ^¬ version element or the conversion material. In this case, it may also be considered that with the aid of the conversion material, the primary light radiation of the semiconductor chip is substantially completely converted into at least ei ^¬ ne secondary light radiation. In this context, an embodiment is also conceivable in which the optoelectronic component has pixel regions for emitting light radiation in different colors. For this purpose, the conversion material of CONVERSION layer may be formed of the conversion element in different preparation ^¬ chen to generate different conversion radiations. In these areas the Konversionsma ^¬ TERIAL may be the same matrix material, for example silicone, and various phosphor particles having. The refraction index of the partially varied in this embodiment, conversion material may be substantially uniform and be optionally essentially given by the matrix material before ^¬. The conversion layer may further comprise additional areas of non konvertierendem material, in which no radiation conversion occurs, and in which the primary, for example, blue light radiation of the semiconductor ^¬ semiconductor chip, the conversion layer to pass. Such Be ^¬ rich may have the matrix material without phosphor particles and optionally additionally scattering particles.

With respect to the above-described configuration, it is possible that the conversion layer of the conversion element further has a limiting structure for limiting lateral radiation propagation. Here, the limiting structure may have a plurality of separate recesses for receiving conversion material and non-converting material. As indicated above, this can be achieved, for example, by a lattice-shaped embodiment of the delimiting structure with structure elements that partially cross each other. The limiting structure may also have a thickness corresponding to the conversion layer in order to spatially separate these materials. It is also conceivable to form the delimiting structure in such a way that the delimiting structure only partially ensures a limitation of the lateral radiation propagation and is otherwise radiation-permeable. For this purpose, the boundary structure both a

Having radiation absorbing or reflective material and a transparent material. This allows For example, pixel regions are provided which are subdivided into subpixels for producing differently colored light radiation, wherein with respect to the conversion layer only the pixel regions are optically separated and within the pixel regions a radiation propagation is possible.

For the aforementioned embodiments which, for example, with regard to an application in a display device may be considered, also a conversion material can be used which includes a matrix material and light-emitting ^¬ material particles having a size in the nanometer range, so-called quantum dots.

According to a further aspect of the invention, an optoelectronic device is proposed. The optoelectronic component has a pixelated radiation-emitting semiconductor chip and a conversion element. The Konversi ^¬ onselement has the structure described above, or egg ^¬ NEN structure according to one or more of the embodiments described above. The conversion element is arranged on the semiconductor chip. Here, the conversion ^¬ layer of the conversion ^element facing the semiconductor chip.

The configuration of the conversion element with the intermediate layer offers the possibility that in the radiation mode of the optoelectronic component a total reflection of radiation predominantly occurs in the region of a side of the conversion layer facing away from the semiconductor chip. In this way, optical crosstalk in the radiation mode to areas of non-controlled pixels can be prevented.

In the radiation-emitting semiconductor chip, the pixels may have lateral dimensions in the range of, for example, 100 μm. The semiconductor chip as well as the conversion element and the component may have lateral dimensions, for example in the millimeter or centimeter range. The conversion element can be fastened to the semiconductor chip via a layer of a radiation-permeable connection means. The bonding agent may be, for example, a silicone adhesive or a glass solder.

For further possible embodiments, features and details, reference is made to the above description. In addition to details of the conversion element, this also applies to details already mentioned above regarding the semiconductor chip and the optoelectronic component. For example, a mögli ^¬ che application of the device in a headlight of an adaptive headlight system. The semiconductor chip may be configured to Erzeu gen ^¬ a primary blue light radiation, for example in the form of a light emitting diode chip. In the conversion element, the intermediate layer for the can at ^¬ game have an airgel material, and may include, for example, the intermediate layer and / or the conversion layer zusätz ^¬ Lich have a separation or confinement structure to limit a lateral radiation propagation, such a structure on the pixelated design of the Semiconductor chips can be matched. The above-mentioned details can also be used for the procedure explained below.

According to a further aspect of the invention, a method for producing a conversion element is proposed. The

Conversion element having the above-described on ^¬ construction or a construction according to one or more of the embodiments described above, can be arranged on a pixelated radiation-emitting semiconductor chip. The method includes providing a carrier layer, wherein the support layer comprises a radiation-transmissive Trägerma ^¬ TERIAL. Is further provided forming an intermediate layer on the support layer, wherein the intermediate having ^¬ layer, an intermediate layer material. The method further comprises forming a conversion layer on the intermediate layer, wherein the conversion layer comprises a conversion material for radiation conversion. The interlayer material has a refractive index, which is rather smaller than a refractive index of the support material and a refractive index of the conversion material.

The construction of the conversion element with the intermediate layer offers the possibility of realizing an optoelectronic component which can be operated such that an optical crosstalk is largely suppressed.

The formulation used above, that a layer is formed on another layer includes both a exporting ^¬ approximate shape can be formed zend, and an embodiment in which a layer is formed on a layer in which these layers directly aneinandergren-, wel ^¬ previously provided with (at least) one further layer. The further layer can thus be located between these layers, between the carrier layer and the intermediate layer and between the intermediate layer and the Konversi ^¬ onsschicht. In this context, the following embodiments may also be considered.

In one possible embodiment, a protective layer and / or an antireflection layer are formed on the intermediate layer before the conversion layer is formed on the intermediate layer thus ^coated . A further embodiment comprises forming an antireflection layer on the carrier layer before the intermediate layer is formed on the carrier layer coated in this way.

As stated above, an airgel material may be considered for the intermediate layer material 1 of the intermediate layer. Therefore, a common airgel manufacturing process can be performed to form the intermediate layer. In this case, a gelatinous starting material can be formed on the carrier layer from a liquid, and this can be converted into the airgel material by drying. A process that can be used in this sense is a sol-gel process. If necessary, the intermediate material comprising the airgel material may Layer subsequently polished and / or provided with a protective layer.

Due to the separate production of the conversion element kön- NEN for the formation of the conversion layer on the interim ^¬ rule layer a number of different embodiments are contemplated. Forming the conversion layer may include applying conversion material, for example, by means of a printing process. Possible, for example, screen printing or stencil printing, or else an application followed by stripping by means of a doctor blade. In these processes, a conversion material may comprising a matrix ^¬ material, for example silicone, phosphor particles and ge ^¬ optionally scattering particles, including a solvent-means of applied and subsequently dried.

Such offset with a solvent Konversionsma ^¬ TERIAL can also with a spraying aufbrin ^¬ gen and then dry.

Another variant of the method is an electrophoretic deposition of phosphor particles and optionally

Scattering particles, followed by subsequent application of a matrix material such as silicone to fix the particles.

Furthermore, it can be considered as a matrix material, a glass material or a ceramic binder einzuset ^¬ zen. The first method variant may comprise applying a molten glass material mixed with phosphor particles and possibly scattering particles, which material may subsequently harden by cooling. In the second variant, a mixture of phosphor particles, the binder and optionally further additives can be applied and subsequently converted into a ceramic conversion material in a process carried out at a high temperature (sintering process). Another embodiment for forming the conversion layer includes depositing at least one phosphor with the aid of a sputtering process and a subsequent Kera ^¬-mix compacting of the phosphor in a test conducted at a high temperature process or sintering process. The ceramic conversion material thus formed can le ^¬ diglich have the compacted phosphor and no matrix material. The separate production of the conversion element also makes it possible to produce the conversion element in a simple manner and without yield losses with a delimiting structure for limiting a lateral radiation propagation. As explained above, the intermediate layer and / or the conversion layer can be formed with such a delimiting structure. In this connection, the following embodiments of the method for the formation of the intermediate layer or conversion layer may be considered. A possible embodiment comprises forming the confining structure, a subsequent deposition of interlayer material (in the production of the intermediate layer) or by conversion material (in the manufacture of Konversi ^¬ onsschicht), and optionally subsequent removal of excess interlayer or conversion material for planarization. The prior formation of the confinement structure may include forming a continuous layer of material of the confinement structure and lithographically patterning this layer. The interlayer material may be applied with a thickness corresponding to the boundary structure or with a greater thickness. In the first variant, the interlayer or conversion material can adjoin the limiting structure only laterally. In the second variant, the interlayer or conversion material may additionally cover the Begren ^¬ Zung structure on one side. Another possible embodiment comprises forming a (first) layer through the intermediate layer or ^¬ conversion material, a forming openings in the form of generated confinement structure in this

Layer, and introducing material of the boundary ^¬ structure in the openings.

It is possible to produce a plurality of conversion elements in the layer composite with the aid of the method. Here, the support layer with lateral dimensions bereitge ^¬ sets that are tuned to the products to be conversion elements from ^¬. The subsequent layers are also formed with corresponding lateral dimensions. At the end of the process, the layer composite can be separated into separate conversion elements, for example by sawing.

For producing an optoelectronic component, a conversion element can as described above Herge ^¬ up separately and are then mounted on a pixelated radiation-emitting semiconductor chip. For fixing the conversion element on the semiconductor chip, a connecting material such as a silicone adhesive or a low-melting glass solder can be used. A fitting placement of the conversion element on the

Semiconductor chip can be realized with the help of an image recognition. Furthermore, it may possibly be considered to form the conversion element and / or the semiconductor chip with alignment marks for precise adjustment.

It can be considered, choose based on measurements of a with respect to predetermined properties, for example a given before ^¬ color locus of generatable radiation suitable pair trainees of a conversion element and a semiconductor chip, before these components are as set forth above connected together. The advantageous embodiments and further developments of the invention explained above and / or reproduced in the subclaims can be used individually or else in any desired combination with one another-except, for example, in cases of clear dependencies or incompatible alternatives.

The above-described characteristics, features and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more clearly understood in connection with the following description of exemplary embodiments, which are explained in more detail in connection with the schematic drawings. In the drawings: Figure 1 is an optoelectronic component with a pixelier- th radiation-emitting semiconductor chip and a conversion element disposed thereon, wherein the conversion element comprises a support layer, a conversion layer and a rule ^¬ Between the seats arranged intermediate layer;

Figure 2 is a further illustration of the conversion element, which illustrates ^¬ in addition based on a beam paths Strahlungsaus ^¬ spread in the conversion element; FIG. 3 is an illustration of a layer ^{stack comprising} only the carrier layer and the conversion layer, where radiation propagation is also illustrated by beam paths; FIGS. 4 to 6 show a method sequence for the production of conversion elements;

FIG. 7 shows a further conversion element, which additionally has a protective layer;

FIG. 8 shows a further conversion element, which additionally has antireflection layers; FIG. 9 shows a further conversion element, in which the ^intermediate layer additionally has a delimiting structure;

FIGS. 10 and 11 show further conversion elements in which the conversion layer additionally has a delimiting structure.

On the basis of the following figures, possible embodiments of an optoelectronic component with a pixelated radiation-emitting semiconductor chip and a conversion element as well as an associated production method will be described. In this case, known processes can be carried out from semiconductor technology and from the production of optoelectronic components, and conventional materials can be used in these areas, so that this is only partially discussed. In the same way, in addition to processes shown and described further processes can be carried out, and can be provided for a device from ^¬ design, in which in addition to gezeig- th and described components other components and

Structures exist. It is further noted that the figures are merely schematic in nature and are not to scale. In this sense, components and structures shown in the figures may be exaggerated or oversized for clarity.

FIG. 1 shows an optoelectronic component 100 in a schematic sectional side view. The optoelectronic component 100 has a pixelated radiation-emitting semiconductor chip 120 and a semiconductor chip

120 arranged conversion element 110 for Strahlungskonver ^¬ sion on. The component 100 can be used, for example, in a front headlight, not shown, of an adaptive headlight system or yAFS system.

The radiation-emitting semiconductor chip 120 is, for ^example, an LED chip. The semiconductor chip 120 has a plurality of individually controllable pixels on a front side 121, with the aid of a primary light radiation can be generated. As indicated in FIG. 1, the semiconductor chip 120 may, for example, have a planar semicon ^¬ ductor body, which is subdivided into the pixels 121. The pixels 121 may have lateral dimensions in the range of lOOym. The primary radiation which can be generated with the aid of the pixels 121 and which can be emitted by the pixels 121 can be, for example, blue light radiation. The pixels 121 may be arranged in the form of a regular grid. The semi-conductor chip 120 and the conversion element 110, and the entire device 100 may include, for ^¬ In play in the millimeter range or centimeter lateral dimensions.

It should be noted that the semiconductor chip 120 may have a much larger number of pixels 121 in cross-section than the three pixels 121 shown in FIG. FIG. 1 can be understood in this sense as a detail representation of the semiconductor chip 120 and of the optoelectronic component 100. This can apply in a corresponding manner for subsequent figures.

The conversion element 110 has a carrier layer 111, a conversion layer 113 for radiation conversion, and an intermediate layer 112 arranged ^therebetween . It is possible that these layers 111, 112, 113, as indicated in Figure 1, immediately adjacent to each other. At the optoelectronic device 100, the conversion element 110 is arranged on the semiconductor chip 120, that the conversion ^¬ layer 113 through counter is the front side of the semiconductor chip 120th In this state, the backing layer a is 111 in the area of the semiconductor chip 120 side of the conversion element 110. facing away from a fastening of Konversi ^¬ onselements 110 on the semiconductor chip 120 is realized via a Zvi ^¬ exploiting that components 110, 120 arranged radiation- permeable connection layer 130th The Verbin ^¬ dung layer 130 may for example comprise a silicone adhesive or a low-melting glass solder. As will be explained in more detail below, the semiconductor chip 120 and the conversion element 110 are separately manufactured vonei ^¬ Nander, and only then verbun together ^¬. This makes it possible to carry out a production of the conversion element 110 without adversely affecting the semiconductor chip 120.

The backing layer 111 of the conversion elements 110 ^¬ externally produced, is formed from a radiation-transparent substrate, for example, an inexpensive glass material or quartz glass. The transparent support layer 111, which may have a thickness in the range from 100 μm to 200 μm, gives the conversion element 110 a high mechanical stability. This facilitates a simple hand ^¬ dling both during the preparation of the conversion element 110 and in the placement of the conversion element 110 on the semiconductor chip 120. In the light of the support layer 111, the conversion element 110 can be self-supporting. In addition, the carrier layer 111 can serve as a protective layer, whereby the other layers 112, 113 of the conversion element 110 and the semiconductor chip 120 can be protected from external influences.

The conversion layer 113 of the conversion element 110 has a conversion material for radiation conversion. The

Conversion material comprises, as indicated in Figure 1, a radiation-permeable base or matrix material 115, in which a powdered and the radiation conversion causing phosphor is embedded in the form of phosphor particles 116. The matrix material 115 may be, for example, a silicone material. The production of the conversion element 110 separately from the semiconductor chip 120 offers the possibility of also using another matrix material 115, such as a glass material.

The phosphor particles 116 may have a grain size and a diameter in a range of 10ym to 15ym, respectively, whereby high efficiency can be achieved. alternative may also be other particle sizes, for example in the range of 5ym. The conversion or phosphor layer 113 can have a layer thickness in the range from 30ym to 50ym or even a smaller layer thickness. The layer thickness may depend on the size of the phosphor particles 116.

With regard to an application in a headlight, the optoelectronic component 100 is designed to generate a white light radiation. This can be chen attainment by 116 of the semiconductor chip 120 ^¬ he testified blue primary radiation partially in a yellow convergence ^¬ sion radiation (secondary radiation) is converted by the phosphor layer 113 and the phosphor particles. In this case, all phosphor particles 116 from the same

Be made fluorescent material. It is also possible

Embodiment of the phosphor layer 113 with phosphor particles 116 made of different phosphor materials for generating differently colored conversion radiation, for example, a yellow-green and a red light radiation. In this way, an improved color reproduction can be achieved ^¬ to. By superimposing the primary and secondary radiation parts, the white light radiation can be generated.

In the case of a headlight, the aim is typically to achieve a color temperature of the white radiation in the range of 5000K to 6000k. This can be by means of fluorescent Parti ^¬ angles 116 of a material from the garnet family verwirkli ^¬ chen. These include, for example, cerium-doped yttrium-aluminum garnet or variants modified with gallium or lutetium. Phosphor particles 116 of such mate ^¬ rials can produce a yellow or yellow-green conversion radiation. If, as stated above, not only phosphor particles 116 are provided for producing a yellow or yellow-green conversion radiation, but also phosphor particles 116 for generating a red light radiation, the latter can be formed for example from materials from the family of nitrides or silicon oxynitrides. _,

 2 B

The intermediate layer 112 of the conversion element 110 has a radiation-transmissive interlayer material whose refractive index is smaller or substantially smaller than the refractive indices of the carrier material of the carrier layer 111 and the conversion material of the conversion layer 113. In this way, optical crosstalk during operation of the optoelectronic component 100 can be suppressed , With regard to the above-mentioned embodiments, both the carrier layer material of the carrier layer 110 and the conversion material of the conversion layer 113 can have a Bre ^¬ index greater than 1.4. The Zwischenschichtma ^¬ material, in contrast, has a smaller refractive index, which is less than 1.2, in particular less than 1.1.

For this purpose, an embodiment is provided in which the interlayer material of the intermediate layer 112 is an aerosol material. This material can have a refractive index which speaks approximately the refractive index of air ^¬ ent. The low refractive index resulting from the high porosity of the airgel material, which (not Darge ^¬ presented) pore structure with a relatively small proportion of solids has, and thus essentially of air, or may be a ^¬ Vaku to. For the solids content of the airgel material of the intermediate layer 112, for example, a Ausgestal ^¬ processing may occur based on a metal oxide such as Sili ^¬ ziumoxid into consideration. Alternatively, titanium, zirconium or aluminum oxide can be used.

Below is seen on an operation of the optoelectronic component 100 and responded to the detail with the aid of the intermediate layer ^¬ 112 of the conversion element 110 scored Prevent crosstalk. During operation of the optoelectronic component 100, the semiconductor chip 120 or at least one driven pixel 121 of the semiconductor chip 120 can generate the primary blue light radiation and deliver it in the direction of the conversion element 110. The primary radiation can be partially converted in the conversion layer 113 of the conversion element 110, that is to say as indicated above yellow or yellow-green light radiation and, if necessary ^¬ additionally in a red light radiation. These light radiations or portions thereof can pass through the intermediate layer 112 and the carrier layer 111 and overlap to a white light radiation. This light radiation can be emitted via the side of the conversion element 110 facing away from the semiconductor chip 120.

The low refractive index of the agelogel material compared to the refractive indices of the conversion material and of the carrier material leads to a total reflection of

Radiation, ie of converted and unconverted radiation components, predominantly already occurs on the side of the conversion layer 113 facing away from the semiconductor chip 120 or at the interface between the conversion layer 113 and the intermediate layer 112. In contrast, substantially no total reflection of radiation occurs at the side of the carrier layer 110 facing away from the semiconductor chip 120 or at the interface between the carrier layer 110 and air, so that the radiation can pass through the carrier layer 111 as unhindered as possible.

To illustrate this condition in Figure 2, the conversion element 110 including selected radiation is a lung lanes is shown in the conversion element 110 ausbrei ^¬ Tenden radiation 200th This illustration relates to the case where the pixel 121 of the semiconductor chip 120 arranged on the left in FIG. 1 is driven. The radiation 200 comprises converted and non-converted radiation parts as indicated above. The radiation 200 may, as is provided ^¬ in Figure 2, incident at various angles to the interface between the conversion layer 113 and the intermediate layer 112th This is because the fluorescent Parti ^¬ kel 116 emit isotropic radiation conversion, and can that the primary radiation and the conversion radiation scattering in the conversion layer 113 subject. Provided that the conversion ^¬ layer on the interface between 113 and intermediate layer 112 impinging Strah ^¬ lung 200 has an angle of incidence that exceeds the applicable for ^¬ sen range critical angle (Totalreflexionswin- kel), the radiation 200, as shown in Figure 1 to ^¬ valley is at ^¬ indicated hand of the right of the three radiation paths reflected. Upon impact at a smaller angle of incidence, the radiation 200 may enter the intermediate layer 112, and after passing through the intermediate layer 112 and then the backing layer are discharged from the Konversi ^¬ onselement 110 111. In this way, no or essentially no radiation 200 can reach the side of the carrier layer 111 facing away from the semiconductor chip 120, which radiation has an angle of incidence greater than the critical angle applicable for this position. In other words, it is with the aid of the intermediate layer 112, the total reflection causing interface to the conversion layer 113 verla ^¬ device. A consequence of this is that a radiation emission in the optoelectronic component 100 remains essentially restricted to the region of the driven pixel 121 of the semiconductor chip 120 or, in the case of a plurality of driven pixels 121, substantially to the region (s) of the plurality of driven pixels 121. The airgel intermediate layer 112 can form an optical insulation layer in this sense.

To illustrate the effect of the intermediate layer 112, FIG. 3 shows a comparison of radiation paths 200 in a layer stack in which the intermediate layer 112 has been omitted and which consequently has only the carrier layer 111 and the conversion layer 113 arranged thereon. The representation of the radiation paths refers in a corresponding manner to the case that the layer stack of Figure 3 on the semiconductor chip 120 of figure 1 is disposed, wherein the conversion layer 113 to the semiconductor chip 120 ^¬ is Wandt added here, and the left pixel 121 of the semiconductor chip 120 is controlled. Furthermore, a condition is taken as the basis in which the carrier material of the carrier layer 111 and the conversion material of the conversion layer 113 having unge ^¬ ferry the same refractive index.

As shown in FIG. 3, the radiation 200 can pass from the conversion layer 113 into the carrier layer 111 without a change in direction. In this way, part of the radiation 200 at an angle exceeding the critical angle of incidence to the semiconductor chip 120 abge ^¬ opposed surface of the backing layer 111 are incident. This portion of the radiation 200 can be reflected back to the conversion ^¬ layer 113, namely in a range of multiple pixels 121 away from the driven pixel 121, whereby it comes to a crosstalk. According to FIG. 3, for example, a back reflection may occur in a region of pixels 121, which are the pixels 121 next to it with respect to the driven pixel 121. This case may occur, for example, with a thickness of the carrier layer 111 of 150ym. The totally reflected

Radiation 200 may be subject to backscatter at the conversion layer 113. In the case of a primary, totally re ^fl ected radiation part, it is possible to generate conversion radiation.

Since the radiation 200 in the region of the driven pixel 121 can be emitted isotropically from the conversion layer 113, when the layer stack of FIG. 3 is used on the semiconductor chip 120, a relatively large portion of the radiation 200 can fall below the critical angle to the front surface the carrier layer 111 impinge and be totally reflected. In ^¬ play, the critical angle may be 42 ° at a Bre ^¬ monitoring index of 1.5 of the backing layer 111th This results in that the support layer 111 can be used as light guides fun ^¬ yaw, with the result that a radiation emission from the stack of layers is not restricted to the area of the actuated pixel 121, but a radiation delivery to a great extent in the area of the non-driven Pixels 121 can be made. Thus, a crosstalk when using the layer stack of Figure 3 is clearly pronounced.

In the case of the conversion element 110 of the optoelectronic component 100 of FIG

Intermediate layer 112, however, to introduce the occurrence of Totalreflexi ^¬ on to the conversion layer 113 and as a result of ^¬ a light guide function of the support layer 111 and thus to suppress crosstalk largely. In this connection, it is further provided that the intermediate layer 112 of the conversion element 110 has a thickness in a range from 2ym to 5ym. It can be ensured with high reliability that the radiation emitted by the conversion layer 113 radiation, the intermediate layer 112 is not tunneled through, and, consequently, the total reflection may occur at the ^¬ the semiconductor chip 110 side remote from the conversion layer 113th

For reasons of clarity, FIG. 2 does not show that it is not subject to total reflection

Radiation 200 when passing through the conversion element 110 at the interfaces between the various layers 111, 112, 113 as well as on the front side of the carrier layer 111 may be subject to a small part of a back reflection (Fresnel reflection). Furthermore, there may be a late ^¬ eral radiation propagation in the intermediate layer 112 and in the conversion layer 112th These effects may possibly be negligible. In this sense, for example, provide the layer thicknesses indicated above for the intermediate layer 112 (2ym to 5ym) and the conversion ^¬ layer 113 (30ym to 50ym) the possibility to damp occurring in these layers 112, 113 radiation propagation with appropriate scattering largely. If, due to these effects, however, an ^overspeak should occur, this only concerns adjacent pixel areas, which are not located further away from the layer stack of FIG. In addition, it is possible for the conversion element 110 vorzuse ^¬ hen suitable developments, by means of which the prevention of crosstalk can further favor. For example, it may be considered that the conversion material of the conversion layer 113 comprises smaller phosphor particles 116 and / or additional scattering particles, not shown, in order to reduce (possibly occurring) crosstalk at the expense of efficiency. Further possible approaches will be discussed in more detail below.

The airgel material of the intermediate layer 112 is characterized not only by a small refractive index, but also by a low thermal conductivity. In this way, the intermediate layer 112 can serve as a thermal insulator during operation of the optoelectronic component 100.

In the radiation mode, part of the primary radiation in the conversion material or in the phosphor particles 116 of the conversion layer 113 is converted into heat energy. The intermediate layer 112 produced from the airgel material can ensure that the amount of heat generated in the region of a pixel 121 in the conversion layer 113 is substantially not distributed to adjacent pixel areas. Instead, the heat energy can be dissipated via the semiconductor chip 120 of the optoelectronic component 100. As a result, temperature-induced inhomogeneities can be avoided.

As indicated above, the conversion element is se ^¬ ready prepared from the semiconductor chip 120 110th May occur in loading tracht to produce a plurality of conversion elements 110 in the layer composite and then for ^¬ these individually. This procedure is explained in detail below with reference to Figu ^¬ ren 4 to 6, in which cutout, a possible procedure for preparation of CONVERSION elements shown 110th In this context, the

Part on further possible embodiments of a conversion ^¬ elements 110 received. In the method, a carrier layer 111 is provided, which has a radiation-transmissive carrier material (cf., FIG. 4). The provided carrier layer 111 has comparatively large lateral dimensions, which are on the number of abge to be manufactured conversion elements 110 ^¬ true. As stated above, the carrier layer

111 have a thickness in a range of lOOym to 200ym, and, the carrier material is a glass material such as quartz glass at ^¬ game to be.

Alternatively, the carrier layer 111 may be formed of a more stable transparent material such as sapphire. This makes it possible, 111 having a smaller Di ^¬ blocks below lOOym, for example in the range of 50ym to provide the carrier layer. Although sapphire has a higher refractive index than quartz glass, a larger part of the radiation can be subject to surface or back reflection during radiation operation. This effect can be compensated with the aid of antireflection or antireflection layers, as will be explained in more detail below.

Subsequently, as also shown in FIG. 4, an intermediate layer 112 is formed on the carrier layer 111. The intermediate layer 112 has an airgel material, WEL ches may be based on a metal oxide such as silicon, Ti ^¬ tan, zirconium or aluminum oxide. The intermediate layer 112 is formed in a thickness ranging from 2ym to 5ym. For producing the airgel intermediate layer 112 is a gel-like layer on the carrier output ^¬ layer 111 may be formed from a liquid, and this can subsequently through a drying process in the airgel intermediate layer

112 are converted. One possible process sequence encompassing these steps is a sol-gel process.

If desired, the airgel layer 112 may be subsequently po ^¬ lines. This may be considered if the Airgel layer 112 has a high surface roughness on ^¬ has. By polishing, scattering effects associated with roughness can be avoided. Subsequently, as shown in Figure 5, forming a Konversi ^¬ onsschicht 113 on the interlayer 112th In the position indicated in Figure 5. Processing of phosphor in powder form, the conversion layer 113 116. A conversion ^¬ material comprising a matrix material 115, for example silicon kon, and embedded therein, the phosphor particles

Phosphor particles 116 may be as specified above for Erzeu ^¬ gene of a yellow or yellow-green conversion radiation be designed and manufactured for this purpose from a Leuchtstoffmateri- al from the garnet family. Optionally, the conversion material may additionally comprise phosphor particles 116 for generating a red light radiation, which can be realized with materials from the family of nitrides or silicon nitrides. Further, the Konversi ^¬ onsmaterial optionally additionally comprise scattering particles (not shown). The conversion layer 113 can with egg ^¬ ner thickness in the range of 30ym to 50ym or be made smaller.

To form the conversion layer 113 on the intermediate layer 112 may be Runaway ^¬ performs a printing process, for example, a screen printing or stencil printing process ^¬ or doctoring. Here, a printing paste from the Konversi ^¬ onsmaterial and a solvent on the intermediate layer 112 is applied which is subsequently dried. So that the printing paste is flowable, a minimum proportion of Mat ^¬ rixmaterial is required.

A solvent-added conversion material can also be applied by means of a spray process (spray coating) and then dried. Compared to printing, the conversion layer 113 can thereby be fabricated with a higher packing density of phosphor particles 116. This also applies to a further variant in which initially phosphor particles 116 and, if appropriate, scattering particles are applied by means of electrophoretic deposition (EPD, electrophoretic deposition) and subsequently a matrix material 115 such as silicone for fixing the particles.

The production separately from a semiconductor chip 120 also makes possible other configurations in which, for example, processes with temperatures of more than 400 ° C. are carried out. In this regard, the following variants may be considered.

It is possible, for example, to use a different material, for example a glass material or a ceramic binding material, as matrix material 115 instead of silicone. Sol ^¬ che materials can be characterized by a high temperature resistance. In contrast, a silicone material can be subject to embrittlement at a continuous load at a temperature of well above 150 ° C.

In this sense, it is conceivable, for example, as aufzu conversion material ^¬ a staggered with phosphor particles 116 and, optionally, scattering particles, molten glass material ^¬ bring, which can cool and harden subsequently characterized. Also, precipitation of glasses from the liquid phase ( "water glass") is possible. Another approach be ^¬ is to provide a mixture of phosphor particles 115, a ceramic binder and optionally further to ^¬ record materials applied and this mixture is subsequently ceramic in a sintering process in a Convert conversion material.

Alternatively, it may be considered to deposit 113 use one or more phosphors with the aid of a sputtering method for forming the conversion layer and nachfol ^¬ quietly to densify ceramic in a sintering process. In this way, the conversion layer 113 can be one of the figures different structure, ie only one or more compacted phosphors and no matrix material.

The layer composite present after the formation of the conversion layer 113 is then separated into separate conversion elements 110, as shown in FIG. Here ^¬ the conversion elements 110 is formed with lateral dimensions corresponding to the size of a semiconductor chip 120th The cutting through of the layer composite, which can be carried out for example by sawing, takes place along corresponding dividing lines 210.

A product produced by the above method Konversi ^¬ onselement 110 may then be arranged on a semiconductor chip 120 in order to realize an optoelectronic device 100 having the structure shown in Figure 1. Here comes a bonding material 130, for example, a silicone adhesive or ^¬ a glass solder, is used. A precise positioning of the conversion element 110 on the semiconductor chip 120 can be achieved with the aid of image recognition. Of

Furthermore, it is conceivable to form the conversion element 110 and / or the semiconductor chip 120 with adjustment marks (not shown) in order to promote accurate adjustment. This can be considered, for example, if the conversion element 110 is additionally manufactured with an absorptive or reflective separation structure explained below and adapted to the pixels 121 of the semiconductor chip 120.

With respect to the manufacturing of optoelectronic Bauelemen- th 100, it may further be considered to undergo conversion elements 110 prior to mounting on the semiconductor chip 120 of a Mes ^¬ solution to detect the conversion characteristics. Semiconductor chips 120 can also be subjected to a measurement. Based on this, suitable pairs of a conversion element 110 and a semiconductor chip 120 can each be selected and connected to one another. As a result, it is possible to achieve that which can be generated by the components 100 Radiation predetermined properties such as a given color location can correspond.

In the following, further modifications or developments of a conversion element 110 of an optoelectronic ^component 100 are described. In this regard, it should be understood that consistent features and aspects will not be described again in detail below. For details, reference is made to the above description instead. Furthermore, it is possible that a feature described in relation to one embodiment may also apply to another embodiment or that features of several embodiments can be combined with one another. FIG. 7 shows a detail of a further conversion ^element 110, which additionally has one arranged between the intermediate layer 112 and the conversion layer 113

Protective layer 140 has. The protective layer 140 may include, for example, silicon oxide. In a manufacturing process, the protective layer 140 may be formed after forming the intermediate layer 112 and before forming the conversion layer 113 on the intermediate layer 112. With the aid of the protective layer 140, the pore structure of the Aerogelmate- can rials closed the intermediate layer 112, and thus the penetration of the matrix material 115 below having formed ^¬ th conversion layer 113 may be prevented in the pores.

With the aid of the following embodiments of a conversion element 110, the prevention of crosstalk can be further promoted. One possible measure is a Ausgestal ^¬ processing with one or more anti-reflection layers.

In this sense, FIG. 8 shows a detail of a further conversion element 110, which additionally has a plurality of antireflection layers 141, 142, 143. The antireflection coating 141 is formed on a side of the carrier layer 111 facing away from the intermediate layer 112. The antireflection layer 142 is located between the carrier layer 111 and the intermediate layer 112, and the antireflection layer 143 is located between the intermediate layer 112 and the Kon ^¬ version layer 113. The antireflection layers 141, 142, 143 make it possible, reflections of the conversion element 110 passing radiation on the surfaces or

To prevent interfaces of the respective layers 141, 142, 143. In this way, the crosstalk can be additionally suppressed. Further, the antireflection layer 143 may serve as a protective layer for closing the pores of the airgel material of the intermediate layer 112.

The antireflection layers 141, 142, 143 may be realized in the form of dielectric layer pairs. In a production method, the carrier layer 111 can be provided with the anti-reflection layers 141, 142 before the intermediate layer 112 is formed on the carrier layer 111 coated in this way or on the anti-reflection layer 142. Subsequently, the anti-reflection layer 143 on the interim ^¬ rule layer are formed 112, and can then the conversion layer 113 on the thus coated Zvi ^¬ rule layer 112 are formed respectively on the antireflection layer 143 from ^¬.

Deviating from FIG. 8, it is possible to form a conversion element 110 with a smaller number of antireflection layers or even with only one antireflection layer.

The production of a conversion element 110 separately from a semiconductor chip 120 also offers the possibility of ^forming the conversion element 110 in a simple manner and without yield losses, in addition to a limiting structure for limiting lateral radiation propagation. Such a light barrier may also prove beneficial for suppressing crosstalk. Possible configurations of a conversion element 110 are illustrated by the fol ^¬ constricting figures. Figure 9 shows a further conversion element 110 additionally has a limiting ^¬ structure of structural elements 151 at wel ^¬ chem the intermediate layer 112th The Strukturele ^¬ elements 151 may comprise a radiation-absorbing or reflec- rendes material. This material differs from the airgel material of the intermediate layer 112, which is present in layer regions 161 as indicated in FIG. For a configuration of the structural elements 151 made of a radiation-absorbing material, for example, a metal with a low reflectivity, for example

Chrome, to be considered. For a reflective ^{Ausgestal ¬} tion of the structural elements 151, which is associated with a high efficiency in the radiation mode, for example, a Me ^¬ tall such as aluminum is conceivable.

The structural elements 151 have the same thickness as the remaining intermediate layer 112. The structural elements 151 shown in cross-section in FIG. 9 may, for example, be in the form of elongated webs. Furthermore, it is possible for the delimiting structure to be realized in the form of a grid, so that the delimiting structure has a plurality of structure elements 151 which partially cross one another (not shown). In such an embodiment, the

Structural elements 151 of the boundary structure surround separate recesses, within which the airgel material of the intermediate layer 112 is arranged. Here, the interim ^¬ rule layer 112 having separate areas of the layer 161 from the airgel material. This structure can be matched to the pixelated configuration of a semiconductor chip 120. For example, the layer regions 161 can each be assigned to a corresponding pixel 121 of the semiconductor chip 120.

In a production method for realizing the structure of Figure 9, the limiting structure having the structure elements 151 may be provided ^¬ forms on the carrier substrate 111th The formation of the delimiting structure may include forming a continuous layer of material of the boundary structure and a lithographic structuring of this layer include. Subsequently, an application of the airgel material can take place. Optionally, following or before the formation of the conversion layer 113, airgel material located on the structure elements 151 can be removed for planarizing the intermediate layer 112.

Figure 10 shows a further conversion element 110, additionally comprising at wel ^¬ chem the conversion layer 113 is a boundary structure with structural elements 152 for limiting a lateral radiation propagation. The structural elements 152 are (a matrix material shown in the embodiment 115 with light ^¬ material particles 116) formed of a material from the conversion of the conversion layer 113 unterscheiden- of the material. The structural elements 152 may comprise a radiation absorbing material such as chromium. In this way, the structural elements 152 can be kept relatively flat and, as shown in FIG. 10, have a smaller thickness than the conversion layer 113. The structural elements 152 may in this case be covered by the conversion material 113, 115 on a side (directed downwards in FIG. 10).

The structural elements 152 may also be designed, for example, in the form of elongated webs. Furthermore, the delimiting structure may be realized in the form of a grid so that the delimiting structure has a plurality of structure elements 152 that partially cross each other (not shown). This structure can be matched to the pixelated configuration of a semiconductor chip 120. By way of example, regions laterally enclosed by the structure elements 152 can each be assigned to a corresponding pixel 121 of the semiconductor chip 120. In a manufacturing method for realizing the embodiment of FIG. 10, the boundary structure with the structural elements 152 may be formed on the intermediate layer 112. The formation of the limiting structure can be an forming a continuous layer of material of the limiting structure and comprising lithographically structuring this layer. Subsequently, application of conversion material 115, 116 can take place. If appropriate, a portion of the conversion material 115, 116 can subsequently be removed in order to planarize the conversion layer 113 on the side facing away from the intermediate layer 112.

Figure 11 shows a further conversion element 110, wherein the conversion layer of brass WEL 113 also additionally Be ^¬ grenzungsstruktur with structural elements 153 has. The structural elements 153 may comprise, for example, a reflective material. This may be, for example, a silicone material filled with reflective particles.

The structural elements 153 have the same thickness as the remaining conversion layer 113. Here, too, the structural elements 153 can be elongate webs or the boundary structure can be realized in the form of a grid with partially crossing structural elements 153 (not shown). Here, the structural elements 153 of the Be ^¬ grenzungsstruktur separate recesses may enclose within which the conversion material 115, 116 is arranged so that the conversion layer 113 from each other separate

Layer regions 163 of the conversion material 115, 116 has on ^¬ . This structure can be matched to the pixelated configuration of a semiconductor chip 120. For example, the layer regions 163 may each be assigned to a corresponding pixel 121 of the semiconductor chip 120.

To realize the structure of FIG. 11, a continuous layer of the conversion material 115, 116 may be formed on the intermediate layer 112. Subsequently, the conversion material 115, 116 can be removed locally, so that openings are formed in the form of the limiting structure to be generated. The openings can be filled with the Ma ^¬ TERIAL of the boundary structure then. The conversion elements described above with 110 ^¬ Be grenzungsstrukturen can be modified in different ways. It is also possible to combine features. For example, it is conceivable to provide a silicone material filled with reflective particles, as has been described with reference to the embodiment shown in FIG. 11, also in the embodiment for the delimiting structure of the intermediate layer 112 shown in FIG. This can be considered in an analogous manner, first to manufacture a continuous layer of an airgel material, to open it locally and then to fill the holes with a material of Be ^¬ grenzungsstruktur. Furthermore, it is possible to produce the intermediate layer 112 with an absorptive delimiting structure, in which the structural elements have a smaller thickness than the intermediate layer 112, analogously to the construction shown in FIG.

A further modification consists in that recesses or regions enclosed in a lattice-shaped delimiting structure are not assigned to one but to a plurality of pixels of the semiconductor chip. It is also possible, Anstel ^¬ le of a grating to provide a different form for a structural limitation ^¬ structure. For example, a ^delimiting structure can encompass only one or a plurality of separate structural elements. Furthermore, embodiments are conceivable in which both the intermediate layer 112 as well as the conversion layer 113 ^¬ have a limiting structure. The embodiments explained with reference to the figures represent preferred or exemplary embodiments of the invention. In addition to the described and illustrated embodiments, further embodiments are conceivable which may include further modifications and / or combinations of features. For example it is possible to use other materials instead of the ^above-¬ passed materials. Also, the above figures are to be regarded as examples, which can be replaced by other information. With regard to a production of optoelectronic components 100, a common dicing of conversion elements 110 and semiconductor chips 120 is possible. For this purpose, a layer composite comprising (at least) a carrier layer 111, a

Intermediate layer 112 and a conversion layer 113 made and then arranged on a plurality of semiconductor chips 120 umfas ^¬ send component composite or wafer. Nachfol ^¬ quietly this composite can separate elements in optoelectronic building 100 are separated.

Apart from a head light other areas of application for a conversion element 110 and one equipped with ei ^¬ nem conversion element 110 optoelectronic component can be considered 100th For example, an application in a display device for displaying information and / or advertising messages is possible.

In this case, the optoelectronic component 100 may be designed to generate a light radiation which differs from white. This can be achieved by a entspre ^¬-reaching design of the conversion material of Konversi ^¬ onsschicht 113th It is also conceivable that the primary radiation of the associated semiconductor chip 120 is substantially completely converted into one or more conversion radiations.

Another possible configuration is a Konversionsele ^¬ ment with pixel regions for emitting light radiation in different colors. For this purpose, the conversion material of the conversion layer 113 may be formed in different regions for generating different conversion radiations. This can be achieved by the conversion material having a matrix material such as silicone and different phosphor particles in different areas. It may be formed from ^¬ addition nichtkonvertierende areas of a nichtkonvertierenden material in the conversion layer of the primary radiation of the semiconductor chips 120 can be passed. Such areas may include the matrix material and scattering particles.

In a conversion element for emitting light radiation in different colors, moreover, the associated conversion layer may be formed with a delimiting structure. Here, the restriction structure may be realized in the form of a grid with separate recesses for receiving conversion material and non-converting material. The delimiting structure can furthermore be designed in such a way that the delimiting structure only partially ensures a limitation of the lateral radiation propagation and is otherwise radiation-transmissive. For this purpose the Begren ^¬-cutting structure may have both a radiation absorbing or re- be inflected material and a transparent material. In this way, for example, pixel regions can be formed which are subdivided into subpixels for emitting differently colored light radiation, wherein with respect to the conversion layer only the different pixel regions are optically separated and within the pixel regions a radiation propagation between the subpixels is possible.

Although the invention in detail by preferred execution ^¬ examples has been illustrated and described in detail, the invention is not limited by the disclosed examples and other variations can be derived therefrom by the skilled artisan without departing from the scope of the invention.

LIST OF REFERENCE NUMBERS

100 component

 110 conversion element

 111 carrier layer

 112 interlayer

 113 conversion layer

 115 matrix material

 116 phosphor particles

 120 semiconductor chip

 121 pixels

 130 connecting layer

 140 protective layer

 141, 142 antireflection coating

 143 antireflection coating

 151, 152 structural element

 153 structural element

 161, 163 layer area

 200 radiation

 210 dividing line

Claims

PATENTA S PRUCHE Conversion element (110), which can be arranged on a pixelated radiation-emitting semiconductor chip (120), comprising: a carrier layer (111) comprising a radiation-transmissive carrier material; a conversion layer (113) comprising a Konversi ^¬ onsmaterial (115, 116) to the radiation conversion; and a between the carrier layer (111) and the Konversi ^¬ onsschicht (113) arranged intermediate layer (112) on ^¬ facing an interlayer material having a refractive index which is smaller than a refractive index of the substrate and a refractive index of the conversion ^¬ materials. Conversion element according to claim 1, wherein the refractive index of the interlayer material of the intermediate layer (112) is less than 1.2, in particular less than 1.1. Conversion element according to one of the preceding claims, wherein the interlayer material of the intermediate layer (112) is an airgel material. Conversion element according to one of the preceding claims, wherein the intermediate layer (112) has a thickness in a range from Be ^¬ 2ym to 5ym. Conversion element according to one of the preceding claims, wherein the carrier material of the carrier layer (111) a Glass material is. 6. conversion element according to any preceding Ansprü ^¬ che,  further comprising at least one antireflection layer (141, 142, 143). 7. Conversion element according to one of the preceding claims, wherein the intermediate layer (112) additionally comprises a wetting Begren ^¬ structure (151) for limiting a lateral radiation propagation. 8. Conversion element according to claim 7,  wherein the boundary structure (151) of the intermediate layer (112) comprises a radiation absorbing or reflective material. 9. Conversion element according to one of claims 7 or 8, wherein the boundary structure (151) of the intermediate layer (112) is realized in the form of a grid with a plurality of ridge-shaped and partially crossing structural elements. 10. conversion element according to any preceding Ansprü ^¬ che, wherein the conversion layer (113) a loading ^¬ grenzungsstruktur (152, 153) in addition to limiting a lateral radiation propagation. 11. Conversion element according to claim 10, wherein the delimiting structure (152, 153) of the conversion layer (113) ^comprises a radiation- ^absorbing or re-inflecting material. 12. Conversion element according to one of claims 10 or 11, wherein the delimiting structure (152, 153) of the conversion layer (113) in the form of a grid with a multiple number of web-shaped and partially crossing structural elements is realized. 13. conversion element according to any preceding Ansprü ^¬ che, wherein the conversion layer (113) has a thickness in a range of 30ym to 50ym or a smaller thickness ^¬ . 14. The optoelectronic component (100) comprising a pixelated radiation-emitting semiconductor chip (120) and a conversion element (110) according to one of the preceding ^¬ preceding claim, wherein the conversion element (110) on the semiconductor chip (120) and the Kon ^¬ version layer ( 113) of the conversion element (110) faces the semiconductor chip (120). 15. A method for producing a conversion element (110) according to any one of claims 1 to 13, wherein the Konversi ^¬ onselement (110) can be arranged on a pixelated Strahlungsemit ^¬ animal semiconductor chip (120), comprising: Providing a carrier layer (111), wherein the Trä ^¬ carrier layer (111) comprises a radiation-transmissive support mate rial ^¬; Forming an intermediate layer (112) on the carrier layer (111), wherein the intermediate layer (112) comprises a Zvi ^¬ rule layer material; and Forming a conversion layer (113) on the interim ^¬ rule layer (112), wherein the conversion layer (113) comprises a conversion material (115, 116) for Strahlungskonver ^¬ sion, wherein the interlayer material has a refractive index which is smaller than a refractive index of Carrier material and a refractive index of the conversion ^¬ material.