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WO2016117124A1 - Dispositif de capture d'image et endoscope - Google Patents

Dispositif de capture d'image et endoscope Download PDF

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Publication number
WO2016117124A1
WO2016117124A1 PCT/JP2015/051885 JP2015051885W WO2016117124A1 WO 2016117124 A1 WO2016117124 A1 WO 2016117124A1 JP 2015051885 W JP2015051885 W JP 2015051885W WO 2016117124 A1 WO2016117124 A1 WO 2016117124A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
imaging device
wiring layer
silicon
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2015/051885
Other languages
English (en)
Japanese (ja)
Inventor
和洋 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Corp filed Critical Olympus Corp
Priority to PCT/JP2015/051885 priority Critical patent/WO2016117124A1/fr
Priority to CN201580074062.XA priority patent/CN107210306B/zh
Priority to JP2016570459A priority patent/JP6612264B2/ja
Publication of WO2016117124A1 publication Critical patent/WO2016117124A1/fr
Priority to US15/652,833 priority patent/US10622398B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/00064—Constructional details of the endoscope body
    • A61B1/0011—Manufacturing of endoscope parts
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/00112—Connection or coupling means
    • A61B1/00114—Electrical cables in or with an endoscope
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/00112—Connection or coupling means
    • A61B1/00121—Connectors, fasteners and adapters, e.g. on the endoscope handle
    • A61B1/00124—Connectors, fasteners and adapters, e.g. on the endoscope handle electrical, e.g. electrical plug-and-socket connection
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/005—Flexible endoscopes
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
    • A61B1/05—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances characterised by the image sensor, e.g. camera, being in the distal end portion
    • A61B1/051—Details of CCD assembly
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations

Definitions

  • a wiring layer having a silicon layer in which a light receiving portion is formed, a plurality of conductor layers disposed in the silicon layer, and a plurality of insulating layers containing an insulating material having a dielectric constant lower than that of silicon oxide.
  • the present invention relates to an imaging device including a cover glass adhered to cover the wiring layer, and an endoscope including the imaging device.
  • Back-side illumination (BSI: Back Side Illumination) type imaging devices having a light receiving portion formed of a CMOS imaging element or the like formed on the main surface are widely used for endoscopes or the like because they have a small diameter and high sensitivity.
  • a plurality of conductor layers and a plurality of insulating layers are stacked in the imaging device in order to ensure matching between the light receiving portion formed of a fine pattern manufactured by the semiconductor technology and a large junction electrode to which a signal cable or the like is connected.
  • Wiring layer is essential. When a through hole or the like is formed in the wiring layer, the insulating material of the insulating layer is exposed at the bottom of the through hole.
  • low-k material which is a material having a relative dielectric constant k lower than that of silicon oxide, as an insulating layer of a wiring layer.
  • Low-k materials are inferior to conventional insulating layer materials in moisture resistance / water resistance, ie, resistance to penetration of moisture (such as water vapor).
  • An imaging device having a low-k material as an insulating layer may not have sufficient reliability because the low-k material is exposed. That is, when moisture penetrates into the insulating layer made of Low-k material, the relative dielectric constant is increased, the parasitic capacitance is increased, and signal delay is caused to cause operation failure or corrosion of the conductor of the conductor layer. There was a possibility that problems such as might occur.
  • the semiconductor device which forms a through-hole in the semiconductor substrate which adhere
  • Embodiments of the present invention aim to provide a compact and reliable imaging device, and a small-diameter, reliable endoscope.
  • the imaging device includes a silicon layer having a light receiving surface on which light received by the light receiving unit is incident and a facing surface, and a plurality of conductors disposed on the facing surface and connected to the light receiving unit.
  • the region has a through hole whose bottom surface is an electrode pad made of the conductor of the conductor layer, and the low dielectric insulator of the insulating layer is not exposed on the inner surface of the through hole.
  • An endoscope includes a silicon layer having a light receiving surface on which light received by the light receiving unit is incident and a facing surface, and a conductor connected to the light receiving unit disposed on the facing surface.
  • a protective portion covering a back surface of the layer opposite to the silicon layer, wherein a guard ring is formed along the outer edge of the wiring layer, and the transparent member covers the silicon layer
  • FIG. 21 is a partial cross-sectional view for illustrating the method for manufacturing the imaging device of Modification 4 of the first embodiment.
  • the imaging device 1 includes a silicon layer 10, a wiring layer 20, an adhesive layer 30, a cover glass 40 which is a transparent member, and a silicon substrate which is a support substrate. 50 and an adhesive layer 60.
  • the adhesive layer 30 bonds the cover glass 40 to the silicon layer 10.
  • the bonding layer 60 bonds the silicon substrate 50 to the wiring layer 20.
  • the thickness (Z direction) of the silicon layer 10 is 3 ⁇ m to 8 ⁇ m
  • the thickness of the wiring layer 20 and the adhesive layer 30 and the adhesive layer 60 is about 5 ⁇ m to 20 ⁇ m
  • the thickness of the cover glass 40 is 150 ⁇ m to It is 5 mm.
  • a light receiving portion 11 made of a CMOS or the like is formed by a semiconductor manufacturing technique.
  • a wiring layer 20 is disposed on the facing surface 10SB opposite to the light receiving surface 10SA on which the light received by the light receiving unit 11 of the silicon layer 10 is incident.
  • the cover glass 40 is bonded to the light receiving surface 10SA of the silicon layer 10 so as to cover the light receiving unit 11.
  • the adhesive layer 30 is made of a transparent resin such as an epoxy resin or a silicone resin, which is more moisture resistant than the low dielectric constant material of the insulating layer 21B.
  • the transparent member may be made of resin or the like as long as the material has high transmittance in the wavelength region of the light received by the light receiving unit 11.
  • the silicon substrate 50 is bonded via the adhesive layer 60 so as to cover the back surface 20SB of the wiring layer 20 opposite to the silicon layer.
  • the silicon substrate 50 is a support wafer for polishing and processing the semiconductor wafer (silicon substrate as an imaging device wafer) on which the light receiving unit 11 is formed and thinning it into a silicon layer 10.
  • the adhesive layer 60 may be the same resin as the adhesive layer 30, but may be opaque.
  • the wiring layer 20 is a multilayer wiring in which a plurality of conductor layers 21A and a plurality of insulating layers 21B are stacked.
  • the wiring layer 20 constitutes a wiring circuit for connecting the fine wiring of the light receiving unit 11 and the electrode pad 29.
  • the conductor 21AA of the conductor layer 21A is connected to the upper and lower conductors 21AA via the conductor 21AA filled in the through hole of the insulating layer 21B.
  • an insulator 21BA is disposed on the side surface of the conductor 21AA of the conductor layer 21A. That is, conductor layer 21A and insulating layer 21B both include conductor 21AA and insulator 21BA.
  • the insulating layer 21B is made of a material having a dielectric constant lower than that of silicon oxide, that is, a so-called low-k material.
  • the lower limit value of the dielectric constant k of the low dielectric constant material is 1.5 or more, preferably 2.0 or more according to the technical limit.
  • the low dielectric constant material of the insulating layer 21B is a porous (porous) carbon-doped silicon oxide film (SiOC).
  • Porous SiOC is formed as a porous body having a structure having voids, and the dielectric constant k can be 2.7.
  • materials for the insulating layer 21B in addition to SiOC, fluorine-doped silicon oxide film (SiOF / FSG), hydrogen-containing polysiloxane (HSQ) material, methyl-containing polysiloxane (MSQ) material, organic (polyimide, parylene) It is also possible to use materials based on fluorine and fluorine.
  • SiOF / FSG fluorine-doped silicon oxide film
  • HSQ hydrogen-containing polysiloxane
  • MSQ methyl-containing polysiloxane
  • organic polyimide, parylene
  • the insulator 21BA of the insulating layer 21B in proximity to the silicon layer 10 may be the low-k material.
  • the frame-like guard ring 24 along the outer edge is formed in the wiring layer 20.
  • the guard ring 24 is formed when the wiring layer 20 is disposed.
  • the guard ring 24 is a moisture-proof wall penetrating the wiring layer 20, and blocks the penetration of water into the low dielectric insulator 21BA inside the guard ring 24. Although a part of the insulator 21BA is also present outside the guard ring 24, the penetration of water into the inside of the guard ring 24 is prevented.
  • the imaging device 1 is a high sensitivity back side illumination type imaging device.
  • the imaging device 1 is manufactured through a process of bonding a semiconductor wafer (imaging device wafer) on which a large number of light receiving units 11 and a large number of wiring layers 20 are disposed to a silicon substrate (support wafer) 50 and thinning processing. Be done.
  • the cover glass 40 covers the light receiving portion 11 of the silicon layer 10.
  • the cover glass 40 having a sufficiently thick thickness blocks the penetration of water from the light receiving surface side.
  • the light receiving surface 10SA has a region not covered by the cover glass 40.
  • a through hole whose bottom surface is an electrode pad 29 for connecting the conductor 21AA of the wiring layer 20 and an external wiring (not shown) which is a conductor of a signal cable.
  • the pad opening 10H is formed by wet etching using an alkaline solution such as KOH or TMAH, or dry etching using a fluorine-based gas such as CF 4 , CHF 3 , or C 2 F 6 .
  • the electrode pad 29 is formed of the conductor 21 AA of the uppermost conductor layer 21 A 1 in contact with the silicon layer 10 of the wiring layer 20.
  • the conductor 21AA is made of, for example, copper.
  • the electrode pad 29 is also an etching stop layer when forming the pad opening 10H.
  • the planar view dimension of the electrode pad 29 is larger than the planar view dimension of the pad opening 10H, and the outer peripheral portion of the electrode pad 29 is in contact with the silicon layer 10 over the entire periphery.
  • the pad opening 10H is configured of an electrode pad 29 whose bottom surface is made of a metal material such as copper having excellent moisture resistance. For this reason, in the imaging device 1, there is no possibility that water penetrates the insulator 21BA of the wiring layer 20 through the pad opening 10H.
  • the intrusion of moisture from the side surface is prevented by the guard ring 24, and the intrusion of moisture from the back surface is prevented by the silicon substrate 50 which is a protective portion.
  • the entry of moisture from the pad opening 10 H is prevented by the electrode pad 29.
  • the imaging device 1 has high reliability because moisture does not infiltrate into the low dielectric constant insulator.
  • the characteristics of the imaging device 1 did not deteriorate even when left in a high-temperature, high-humidity environment at 85 ° C. and 85% humidity for 1000 hours.
  • imaging devices 1A to 1E of Modifications 1 to 5 of the first embodiment will be described. Since the imaging devices 1A to 1E are similar to the imaging device 1 of the first embodiment and have the functions of the imaging device 1, the components having the same functions are denoted by the same reference numerals and the description thereof will be omitted.
  • the electrode pad 29 ⁇ / b> A is configured of a plurality of conductor layers 21 ⁇ / b> A of the wiring layer 20.
  • the thickness of the conductor layer 21A made of copper of the wiring layer 20 is not as thick as 0.1 ⁇ m to 0.8 ⁇ m. For this reason, when the electrode pad 29 is constituted only by the conductor 21AA of the uppermost conductor layer 21A1, there is a possibility that the connection of the external wiring is not easy or the moisture resistance may be deteriorated if the external wiring is connected.
  • the imaging device 1A in which the electrode pad 29A is configured by a plurality of conductor layers 21A for example, 3 to 10 conductor layers 21A, connection of external wiring is easier than the imaging device 1 and moisture resistance is Are better.
  • ⁇ Modification 2> As shown in FIG. 5, in the imaging device 1B of the second modification, the silicon substrate 50 is directly bonded to the wiring layer 20 without any other member.
  • the back surface 20SB of the wiring layer 20 is processed to the same high flatness ttv as the surface 50SA of the silicon substrate 50.
  • both the back surface 20SB of the wiring layer 20 and the front surface 50SA of the silicon substrate 50 have high flatness with a flatness ttv (total thickness variation) of 1 ⁇ m or less, preferably 0.5 ⁇ m or less.
  • the flatness ttv is the difference between the maximum value and the minimum value on the entire surface of the height measured in the thickness direction with the bonding surface as a reference surface.
  • the back surface 20SB of the wiring layer 20 is made only of the conductor layer 21A9 whose entire surface is covered with a conductor so that high flatness can be easily obtained.
  • a direct bonding method for example, after the back surface 20SB of the wiring layer 20 is planarized by a CMP method, an ion beam is irradiated to the bonding surface of the two in high vacuum to remove the oxide film and the adsorbed substance on the surface. In the state, a normal temperature bonding method in which both are bonded is used.
  • the direct bonding method is not limited to the above-described normal temperature bonding method in vacuum, but may be a diffusion bonding method or the like in which heat treatment is performed after bonding at normal temperature in the atmosphere.
  • the imaging device 1 ⁇ / b> B is more reliable than the imaging device 1 because it does not have the adhesive layer 60.
  • a protective film 65 made of an inorganic material is disposed between the adhesive layer 60 and the back surface 20SB of the wiring layer 20.
  • the protective film 65 is made of a material with low moisture permeability such as silicon oxide or silicon nitride, and has a film thickness of 0.3 ⁇ m to 5 ⁇ m.
  • the imaging device 1C has higher reliability than the imaging device 1 because the back surface 20SB of the wiring layer 20 is covered with the protective film 65 having moisture permeability lower than that of the adhesive layer 60 made of resin.
  • the wiring layer 20 in which the protective film 65 is disposed may be directly bonded to the silicon substrate 50 without the adhesive layer 60 interposed therebetween.
  • ⁇ Modification 4> As shown in FIG. 7, in the imaging device 1D of the fourth modification, the surface of the guard ring 24D of the wiring layer 20 is covered with the overcoat layer 25 made of silicon oxide.
  • the guard ring is formed using copper which is the conductor 21AA of the conductor layer 21A when the wiring layer 20 is formed. Copper is a metal with excellent moisture permeability, but its corrosion resistance is not high, so it may corrode when water penetrates
  • the surface of the guard ring 24D is covered with an overcoat layer 25 made of highly corrosion-resistant silicon oxide. Therefore, the imaging device 1D has higher reliability than the imaging device 1.
  • the material of the overcoat layer 25 is preferably made of a material having high corrosion resistance, for example, an oxide such as silicon oxide or a nitride such as silicon nitride.
  • the overcoat layer 25 is formed by sputtering or CVD on the inner surface of the hole formed for the guard ring when the wiring layer 20D is formed. Then, the guard ring 24D is manufactured by filling the inside of the hole with copper (21 AB) by a known damascene method. Although the dual damascene method is illustrated in FIG. 8, a single damascene method may be used.
  • the guard ring 24E of the imaging device 1E of the fifth modification is made of a metal covering a trench penetrating the wiring layer 20.
  • a frame-like trench is formed by etching from the back surface 20SB side of the wiring layer 20 before thinning the silicon wafer.
  • the trench penetrates the wiring layer 20 and has the silicon layer 10 as a bottom surface.
  • the inside of the trench is filled with a metal material, such as copper, to fabricate the guard ring 24E.
  • the material filled in the inside of the trench may be an inorganic material such as silicon oxide or silicon nitride, as long as the material is superior in moisture resistance to the low-k material.
  • the imaging device 1E Since the imaging device 1E has the guard ring 24E, it is as reliable as the imaging device 1.
  • the inner wall of the trench may be covered with an inorganic material that is more moisture resistant than the Low-k material.
  • the inner wall of the trench may be covered with the same film made of an inorganic material such as silicon oxide as the overcoat layer 25, and then the inside of the trench may be filled with a metal material such as copper. After covering, it may be filled with an inorganic material such as silicon oxide.
  • the side surface of the imaging device 1 may be covered with a protective layer made of at least one of an insulating material or a metal material instead of the guard ring 24. Also, an O-ring may be fitted in the trench.
  • an imaging device 1F according to a second embodiment will be described. Since the imaging device 1F is similar to the imaging device 1 of the first embodiment and has the function of the imaging device 1, the same reference numerals are given to the components having the same functions, and the description will be omitted.
  • the pad opening 10HF which is a through hole having the electrode pad 29F as the bottom, penetrates not only the silicon layer 10 but also a part of the wiring layer 20. . Therefore, the insulating layer 21B is exposed on the wall surface of the lower portion of the pad opening 10HF.
  • a pad guard ring 24 F surrounding pad opening 10 HF in the wiring layer is formed in wiring layer 20.
  • the outer peripheral portion of the electrode pad 29F is in contact with the pad guard ring 24F over the entire periphery.
  • the effects of the respective modifications can be obtained by adding the configurations of the imaging devices 1A to 1E of the first to fifth modifications of the first embodiment.
  • the endoscope system 9 includes an endoscope 2, a processor 5A, a light source device 5B, and a monitor 5C.
  • the endoscope 2 captures an in-vivo image of the subject by inserting the insertion unit 3 into a body cavity of the subject, and outputs an imaging signal. That is, the endoscope 2 has one of the imaging devices 1 and 1A to 1F at the distal end portion of the insertion portion 3.
  • the operation unit 4 has a treatment tool insertion port 4A of a channel into which a treatment tool such as a forceps, an electric knife, and a test probe is inserted in a body cavity of a subject.
  • the insertion portion 3 includes a distal end portion 3A in which the imaging device 1 is disposed, a bendable curved portion 3B continuously provided on the proximal end side of the distal end portion 3A, and a continuous end provided on the proximal end side of the curved portion 3B. And the flexible tube portion 3C.
  • the bending portion 3B is bent by the operation of the operation unit 4.
  • a signal cable 75 connected to the imaging device 1 at the distal end 3A is inserted through the universal cord 4B disposed on the proximal end side of the operation unit 4.
  • the universal cord 4B is connected to the processor 5A and the light source device 5B via the connector 4C.
  • the processor 5A controls the entire endoscope system 9, performs signal processing on an imaging signal output from the imaging device 1, and outputs an image signal.
  • the monitor 5C displays an image signal output by the processor 5A.
  • the light source device 5B includes, for example, a white LED.
  • the white light emitted from the light source device 5B is guided to the illumination optical system 3D (see FIG. 2B) of the tip 3A through a light guide (not shown) through which the universal cord 4B is inserted, and illuminates the subject.
  • the endoscope 2 is highly reliable because it includes the highly reliable imaging devices 1 and 1A to 1F at the distal end portion of the insertion portion.

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Abstract

La présente invention concerne un dispositif de capture d'image 1 doté d'une couche de silicium 10, d'une couche de câblage 20 comprenant un isolant présentant une constante diélectrique inférieure à celle de l'oxyde de silicium, d'un cache de verre 40 servant à recouvrir la section de réception de lumière 11 de la surface de réception de lumière 10SA de la couche de silicium 10, et d'un substrat 50 de silicium servant à recouvrir la surface arrière 20SB de la couche de câblage 20. Un anneau de garde 24 qui suit un bord extérieur est formé dans la couche de câblage 20. Un trou traversant 10H comportant, en tant que surface inférieure, une plage d'électrode 29 comprenant le conducteur de la couche de câblage 20 est formé dans une région de la couche de silicium 10 qui n'est pas recouverte par le cache de verre 40. L'isolant de la couche de câblage 20 n'est pas apparent sur la surface intérieure du trou traversant 10H.
PCT/JP2015/051885 2015-01-23 2015-01-23 Dispositif de capture d'image et endoscope Ceased WO2016117124A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/JP2015/051885 WO2016117124A1 (fr) 2015-01-23 2015-01-23 Dispositif de capture d'image et endoscope
CN201580074062.XA CN107210306B (zh) 2015-01-23 2015-01-23 摄像装置和内窥镜
JP2016570459A JP6612264B2 (ja) 2015-01-23 2015-01-23 撮像装置および内視鏡
US15/652,833 US10622398B2 (en) 2015-01-23 2017-07-18 Image pickup apparatus and endoscope comprising a guard ring formed along an outer edge on a wire layer and a through-hole with an electrode pad having outer periphery portion in contact with a silicon layer over a whole periphery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2015/051885 WO2016117124A1 (fr) 2015-01-23 2015-01-23 Dispositif de capture d'image et endoscope

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US15/652,833 Continuation US10622398B2 (en) 2015-01-23 2017-07-18 Image pickup apparatus and endoscope comprising a guard ring formed along an outer edge on a wire layer and a through-hole with an electrode pad having outer periphery portion in contact with a silicon layer over a whole periphery

Publications (1)

Publication Number Publication Date
WO2016117124A1 true WO2016117124A1 (fr) 2016-07-28

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US (1) US10622398B2 (fr)
JP (1) JP6612264B2 (fr)
CN (1) CN107210306B (fr)
WO (1) WO2016117124A1 (fr)

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JPWO2022080248A1 (fr) * 2020-10-16 2022-04-21

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WO2020115813A1 (fr) * 2018-12-04 2020-06-11 オリンパス株式会社 Dispositif à semiconducteur, endoscope, et procédé de fabrication de dispositif à semiconducteur
WO2021260863A1 (fr) 2020-06-24 2021-12-30 オリンパス株式会社 Module électronique, procédé de fabrication de module électronique et endoscope

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