[go: up one dir, main page]

WO2016199980A1 - Système de dépôt chimique en phase vapeur à l'aide d'initiateur - Google Patents

Système de dépôt chimique en phase vapeur à l'aide d'initiateur Download PDF

Info

Publication number
WO2016199980A1
WO2016199980A1 PCT/KR2015/009511 KR2015009511W WO2016199980A1 WO 2016199980 A1 WO2016199980 A1 WO 2016199980A1 KR 2015009511 W KR2015009511 W KR 2015009511W WO 2016199980 A1 WO2016199980 A1 WO 2016199980A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
initiator
chamber
chemical vapor
vapor deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2015/009511
Other languages
English (en)
Korean (ko)
Inventor
이재호
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sunic System Ltd
Original Assignee
Sunic System Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020150081432A external-priority patent/KR101767154B1/ko
Priority claimed from KR1020150081431A external-priority patent/KR101695230B1/ko
Application filed by Sunic System Ltd filed Critical Sunic System Ltd
Publication of WO2016199980A1 publication Critical patent/WO2016199980A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
    • B05D3/0272—After-treatment with ovens
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2203/00—Other substrates
    • B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
    • B05D2203/35—Glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2252/00—Sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2252/00—Sheets
    • B05D2252/02—Sheets of indefinite length
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2252/00—Sheets
    • B05D2252/04—Sheets of definite length in a continuous process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2401/00—Form of the coating product, e.g. solution, water dispersion, powders or the like
    • B05D2401/30—Form of the coating product, e.g. solution, water dispersion, powders or the like the coating being applied in other forms than involving eliminable solvent, diluent or dispersant
    • B05D2401/33—Form of the coating product, e.g. solution, water dispersion, powders or the like the coating being applied in other forms than involving eliminable solvent, diluent or dispersant applied as vapours polymerising in situ

Definitions

  • the present invention relates to a chemical vapor deposition system using an initiator, and more particularly, to a chemical vapor deposition system capable of significantly reducing material consumption by improving deposition speed and maximizing material use efficiency in a deposition process using an initiator. It is about.
  • a semiconductor device or a display device is manufactured through various manufacturing processes including a deposition process.
  • a process of depositing a deposition material using a chemical vapor deposition system is essential.
  • CVD chemical vapor deposition
  • Korean Patent Application Publication No. 10-2015-0057679 name of the invention: a substrate cooling apparatus and a chemical vapor deposition apparatus including the same.
  • the cooling device includes an initiator inlet plate into which the initiator is introduced such that the first and second reaction gases react, causing the plurality of reaction gases to react due to the initiator.
  • the initiator is decomposed in the form of radical ions, and since the energy of the radical ions decreases according to the configuration of the access path (curve flow, volume, etc.) of the initiator, in order to minimize collisions until the radical ions formed at the top are ejected to the nozzle. It was configured to be ejected from the top.
  • CVD using an initiator requires that the initiator and monomer be first adsorbed onto the substrate to form a polymerization site in order to cause polymerization of the initiator and monomer on the substrate surface.
  • Initiator CVD consists of three stages: 1 Site generation (monomer adsorption site formation on the substrate) ⁇ 2 Polymerization (polymer formation through polymerization of initiator and monomer) ⁇ 3 Termination (controlling deposition thickness by removing residual initiator) Processes can be distinguished, and such processes form polymers on the substrate surface.
  • FIG. 1 is a cross-sectional view schematically showing the configuration of an example of a conventional chemical vapor deposition system.
  • an initiator 2 and a plurality of monomers 4 and 6 are simultaneously introduced into one chamber 10,
  • the initiator (2) and monomer (4) (6) simultaneously introduced form a monomer adsorption site on the substrate (20), and then form a polymer through a polymerization reaction of the initiator (2) and the monomer (4) (6).
  • a gaseous substance should be introduced into the chamber to create a certain concentration of atmosphere.
  • the size of the chamber may be increased according to the structure of the apparatus for the deposition process.
  • the vapor phase material should fill the entire interior of the chamber, and the input and discharge of the material may be performed to maintain a constant pressure in the chamber.
  • the material must be continually consumed and the material that does not participate in the reaction required to form the polymer should be discharged to a vacuum pumping line (not shown), which causes a problem of high consumption of the material.
  • the concentration of the gaseous substance in each position may vary according to the material flow of the gaseous phase in the chamber and the vacuum pumping direction, it is difficult to secure deposition uniformity of the substrate thin film.
  • CVD using an initiator requires the presence of an initiator to form a polymer thin film, but there is a problem in that thickness reproducibility is difficult by a residual initiator after forming a thin film of a desired thickness.
  • energy heat, plasma, etc.
  • an activation source wire heater
  • An object of the present invention is to solve the above-mentioned problems.
  • a separate chamber for forming a polymerization site of a substrate is formed, thereby improving a deposition rate and a material. It is to provide a chemical vapor deposition system that can reduce the consumption of, and to ensure the deposition uniformity of the deposited substrate thin film is deposited to a uniform thickness of the deposition material.
  • the linear evaporation source is used to minimize damage (heat, plasma, etc.) transferred to the substrate, and most of the material discharged from the nozzle is distributed in a narrow linear evaporation source space, so that most of the supplied material participates in the deposition polymerization reaction. Accordingly, to provide a chemical vapor deposition system that can minimize the leakage of gaseous substances into the chamber outside the substrate to maximize the efficiency of use of the substance.
  • a polymerization reaction of an initiator and a monomer is caused to occur on the surface of a substrate, and a first chamber is formed in which the initiator and the monomer are added to form a polymerization site, and a polymerization site is formed in the first chamber.
  • a second chamber for forming a polymer through polymerization of the initiator and the monomer after the substrate is introduced, and a third chamber for stopping the reaction to control the deposition thickness by removing the residual initiator after the substrate in which the polymer is formed is introduced;
  • a substrate transfer device for moving the substrate from the first chamber to the third chamber via the second chamber, wherein the process of polymer thin film formation is carried out in each chamber step by step.
  • the third chamber is characterized in that the thickness is controlled by blocking the polymerization reaction by additionally adding an initiator to remove the residual initiator.
  • the first to third chambers may control the chamber pressure through intermittent pumping as needed without forming a gaseous fluid flow through a gaseous substance input and vacuum pumping in real time.
  • the substrate transfer device is installed between the first chamber and the second chamber and between the second chamber and the third chamber, the door opening and closing when transferring the substrate to each chamber, the first chamber, Outlets and inlets serving as passages of the substrates formed at positions where the doors are installed in the second chambers and the third chambers, and a transport apparatus for transferring the substrates between the chambers through the outlets and the inlets; It may include a control unit for controlling the operation of the transportation device and the opening and closing of the door.
  • the transport device may be made of a robot arm horizontally reciprocating while entering and exiting the outlet and the inlet.
  • the transport apparatus may include a conveyor apparatus including a plurality of rollers for directly placing or transporting the substrate into the first to third chambers, and a driving apparatus for driving the conveyor apparatus.
  • a conveyor apparatus including a plurality of rollers for directly placing or transporting the substrate into the first to third chambers
  • a driving apparatus for driving the conveyor apparatus.
  • the conveyor apparatus is composed of an internal conveyor device installed inside the first to third chambers, and an external conveyor device installed outside the first to third chambers to connect the chambers.
  • the conveyor apparatus and the external conveyor apparatus may be driven through separate drives.
  • At least two or more monomers may be introduced into the first chamber or the second chamber to form a vapor deposition material atmosphere.
  • the linear evaporation source generates a polymerization reaction between the initiator and the monomer through a polymerization reaction of the initiator and the monomer on the first evaporation source into which the initiator and the monomer are added to form a monomer adsorption site, and the substrate on which the monomer adsorption site is formed in the first evaporation source.
  • the thickness can be controlled by blocking the polymerization reaction.
  • the first to third evaporation sources may include a plurality of nozzles for injecting a deposition material to be deposited on a substrate, and an evaporation source for distributing the deposition material discharged through the nozzle in a narrow volume linear space to participate in the deposition polymerization reaction.
  • a guide and a wire heater provided inside the evaporation source guide and activating the deposition material ejected through the nozzle by radicals may be included.
  • the plurality of nozzles may be spaced apart from each other at a predetermined interval.
  • the evaporation source guide may be configured to guide the deposition material to a position adjacent to the substrate so that the deposition material participates in the deposition polymerization reaction on the substrate surface.
  • the wire heater may be formed in plural, and the plurality of wire heaters may be spaced apart from each other at a predetermined interval.
  • the substrate is made of a flexible substrate
  • the moving means may be made of a roll to roll (roll to roll) device.
  • the roll-to-roll apparatus includes a supply roller for providing the flexible substrate to a deposition position where the deposition material is deposited, a recovery roller for recovering the flexible substrate on which the deposition material is deposited, and between the supply roller and the recovery roller.
  • a direction roller positioned to assist the flexible substrate to be continuously supplied to the deposition position and to pass through the deposition position, and to receive the substrate from the supply roller side so that the deposition material is deposited on the substrate. It may include a supporter roller (supporter roller) for supporting the substrate.
  • the supporter roller may be provided with a substrate cooling means for cooling the heat received while the deposition material is deposited on the substrate.
  • the substrate is made of a plate-like substrate
  • the movement means is a horizontal movement to reciprocate the substrate or linear evaporation source in the horizontal direction to scan the entire area of the substrate for the process of forming a polymer thin film By means.
  • the horizontal moving means includes a conveyor device including a plurality of rollers for directly placing the substrate to move the substrate to the position of the first to third evaporation source, and a driving device for driving the conveyor device. can do.
  • the present invention has the effect of improving the deposition rate and reducing the consumption of the material by configuring a separate chamber for forming the polymerization site of the substrate.
  • the position according to the gas phase material flow and vacuum pumping direction It is possible to secure the deposition uniformity of the substrate thin film by preventing the concentration of the gaseous phase material different from each other.
  • the present invention has the effect of improving the deposition rate and at the same time reduce the consumption of the material by configuring a plurality of linear evaporation source for the step of proceeding the polymer thin film forming process through the polymerization of the substrate.
  • the linear evaporation source is used to minimize damage (heat, plasma, etc.) transferred to the substrate, and most of the material discharged from the nozzle is distributed in a narrow linear evaporation source space, so that most of the supplied material participates in the deposition polymerization reaction. By doing so, it is possible to minimize the leakage of gaseous substances into the chamber other than the substrate to maximize the material use efficiency.
  • the gaseous substance exists in a narrow region, it is easy to control the concentration of the gaseous substance, and thus, it is advantageous to secure the overall uniformity of the substrate.
  • FIG. 1 is a cross-sectional view briefly showing the configuration of an example of a conventional chemical vapor deposition system.
  • FIG. 2 is a cross-sectional view showing the overall configuration of the chemical vapor deposition system of the present invention.
  • 3 to 4 illustrate one embodiment of a substrate transfer apparatus in the chemical vapor deposition system of the present invention, and are sectional views showing a substrate transfer process.
  • Figure 5 is a cross-sectional view showing an embodiment of a linear chemical vapor deposition system of the present invention, showing an example applied to the process of a roll to roll flexible (flexible) substrate.
  • FIG. 6 is a cross-sectional view showing another embodiment of the linear chemical vapor deposition system of the present invention.
  • FIG. 7 is a perspective view showing a linear evaporation source in the chemical vapor deposition system of the present invention.
  • FIG. 8 is a cross-sectional view taken along the line A-A in FIG.
  • FIG. 2 is a cross-sectional view showing the overall configuration of the chemical vapor deposition system of the present invention.
  • the chemical vapor deposition system using the initiator is 1 Site generation (formation of monomer adsorption site on the substrate) ⁇ 2 Polymerization (polymer formation through polymerization of the initiator and monomer) ⁇ (3)
  • the process of the termination is configured to proceed in the three-stage chamber.
  • the present invention causes a polymerization reaction between the initiator 112 and the monomers 114 and 116 on the surface of the substrate 20.
  • the initiator 112 and the monomers 114 and 116 are introduced to form a polymerization site.
  • a second chamber in which the polymer is formed through polymerization of the initiator 122 and the monomers 124 and 126 after the first chamber 110 and the substrate having the polymerization site formed therein are introduced from the first chamber 110.
  • a third chamber 130 which stops the reaction to control the deposition thickness by removing the residual initiator after the substrate on which the polymer is formed is introduced. There is a characteristic to proceed in.
  • the first chamber 110, the second chamber 120, and the third chamber 130 provide a space isolated from the outside to allow a process of depositing a deposition material on the substrate 20.
  • the interior of the chambers is in a vacuum state, and the deposition process is performed in a vacuum.
  • Such a chamber is provided with a vacuum pumping line (not shown) for establishing a vacuum state.
  • a showerhead assembly (not shown) is provided on the upper portion of the chamber. None) can be installed to allow the reaction gas to flow through. In this case, an initiator and a plurality of monomers are simultaneously introduced through the showerhead assembly to form a structure which is ejected downward.
  • At least two monomers and an initiator are added to the first chamber 110 or the second chamber 120 to form a vapor deposition material atmosphere. That is, in the present embodiment, two kinds of monomers are introduced and ejected, but the present invention is not limited thereto, and three or more kinds of reaction gases may be introduced and ejected.
  • the initiator is decomposed in the form of radical ions, and since the energy of the radical ions decreases according to the configuration of the entry path (curve, volume, etc.) of the access path, in order to minimize the collision before the radical ions formed at the top are ejected into the nozzle. It is preferable to configure so that it may eject from the top.
  • an initiator and a plurality of monomers are simultaneously introduced into one chamber to form a polymer, and then materials that do not participate in the reaction required for polymer formation are discharged to a vacuum pumping line, so that all processes are performed in one chamber. Is done.
  • the concentration of the gaseous substance by location varies according to the gaseous fluid flow and the vacuum pumping direction. Will be.
  • the process of controlling deposition thickness by (1) forming a monomer adsorption site on a substrate, (2) forming a polymer through polymerization of an initiator and a monomer, and (3) removing a residual initiator is performed in a separate chamber for each process.
  • the method of adding an initiator by removing residual initiator is not a method of discharging a material that does not participate in the reaction after polymer formation at once but by vacuum pumping line. By using this, the flow of gaseous substances due to the vacuum pumping direction is minimized.
  • the chamber pressure can be controlled by intermittent pumping in each chamber, thereby minimizing the flow of the gaseous substance due to the vacuum pumping direction, thereby preventing the concentration of the gaseous substance deposited on the substrate by location. As a result, the deposition uniformity of the substrate thin film can be secured.
  • the initiator 132 in order to remove the residual initiator in the third chamber 130, by additionally adding an initiator 132, the initiator 132, which is decomposed and introduced into the radical ion form, is combined with the residual initiator to form a molecular form.
  • the residual initiator can be removed quickly, and the polymerization reaction can be blocked to facilitate the thickness control of the thin film.
  • This invention includes a substrate transfer device for moving a substrate in each chamber. That is, a substrate transfer apparatus is provided for sequentially moving the process to each chamber while moving the substrate from the first chamber 110 to the third chamber 130 via the second chamber 120.
  • the substrate transfer device is installed between the first chamber 110 and the second chamber 120, and between the second chamber 120 and the third chamber 130 to each of the substrate 20
  • the substrate is formed and transported in a position where the door 220 is installed in the door 220 and the first chamber 110, the second chamber 120, and the third chamber 130. It may include an outlet and an inlet which is a passage of the passage, a transport apparatus for transferring the substrate between the chamber through the outlet and the inlet, and a control unit for controlling the operation and opening and closing of the door.
  • the outlet and the inlet are formed to be opened in the side of the chamber for the loading and unloading of the substrate, the door 220 is movable between the outlet and the inlet to move the opening and closing the outlet and the inlet.
  • the transport device may be made of a robot arm horizontally reciprocating while entering and exiting the outlet and the inlet.
  • a conventional known robot arm is installed between the first chamber 110 and the second chamber 120 and between the second chamber 120 and the third chamber 130. Can be applied to transfer the substrate 20 to each chamber.
  • the door 220 is closed when the process proceeds in each chamber, but when the process is completed in one chamber and the substrate is to be transferred to the next chamber, the door 220 is opened by the control unit so that the robot arm opens the outlet and The substrate 20 can be transferred through the inlet.
  • the substrate transfer apparatus of the present invention can be applied in various configurations in addition to the above-described robot arm.
  • 3 to 4 illustrate an embodiment of a substrate transfer apparatus in the chemical vapor deposition system of the present invention, and is a cross-sectional view illustrating a substrate transfer process through a roller structure.
  • the transport apparatus includes a plurality of rollers for directly loading or unloading the substrate 20 into the first chamber 110 or the third chamber 130. It may include a conveyor device including a 210, and a driving device (not shown) for driving the conveyor device.
  • the driving device may be a conventionally known technology such as a motor for driving the conveyor device, a detailed description thereof will be omitted.
  • the conveyor device is an internal conveyor device installed in the first chamber 110 to the third chamber 130, and the first chamber 110 to the third chamber 130 is installed outside the chamber between It can be divided into an external conveyor to connect. That is, it is provided with an internal conveyor device for transferring the substrate to proceed with the process inside the chamber, and an external conveyor device for transferring the substrate is completed between the chambers.
  • the internal conveyor device and the external conveyor device may be driven through respective driving devices, and the control of the driving device is controlled by the controller to transfer the substrates inside the chamber and the substrates outside the chamber, respectively. Take control.
  • FIG. 3 is a view illustrating a space between the first chamber 110 and the second chamber 120.
  • An outlet 110a is formed in the first chamber 110, and an inlet 120a is formed in the second chamber 120.
  • the gate 230 is formed between the outlet 110a and the inlet 110b so that the door 220 opens and closes the gate 230.
  • the same structure may be applied between the second chamber 120 and the third chamber 130, and thus the illustration thereof is omitted.
  • the substrate transfer device is driven in a state in which the substrate 20 on which the process is completed is placed on the roller 210 when the formation of the monomer adsorption site on the substrate 20 is completed in the first chamber 110.
  • the control unit controls the opening and closing of the door 220 to open the door 220, so that the substrate 20 passes through the outlet 110a and the inlet 120a. To be transferred to the second chamber 120.
  • the substrate 20 transferred to the second chamber 120 forms a polymer through a polymerization reaction between the initiator 122 and the monomers 124 and 126, and the third chamber 130 is formed in the same manner as described above. After being transferred to, by removing the residual initiator in the third chamber 130, it is possible to proceed to the polymer thin film forming process in three steps.
  • the chemical vapor deposition system using the initiator according to the present invention has an effect of improving the deposition rate and reducing the consumption of materials by configuring a separate chamber for forming a polymerization reaction site of the substrate. .
  • the position according to the gas phase material flow and vacuum pumping direction It is possible to secure the deposition uniformity of the substrate thin film by preventing the concentration of the gaseous phase material different from each other.
  • Figure 5 is a cross-sectional view showing an embodiment of the linear chemical vapor deposition system of the present invention, shows an example applied to the process of a roll to roll (flexible) substrate
  • Figure 6 is a linear chemistry of the present invention
  • 7 is a cross-sectional view showing another embodiment of the vapor deposition system
  • Figure 7 is a perspective view showing a linear evaporation source in the chemical vapor deposition system of the present invention
  • Figure 8 is a cross-sectional view taken along line AA in FIG.
  • 1Site generation formation of monomer adsorption site on the substrate
  • 2Polymerization polymer formation through polymerization of initiator and monomer
  • 3Tremination removal by removing residual initiator
  • a chamber 100 for forming a polymer through polymerization of an initiator and a monomer on the surface of the substrate 20 and an initiator and a monomer are added to a part of the surface of the substrate in the chamber 100.
  • a plurality of linear evaporation sources 400 and the substrate 20 or the linear evaporation sources 400 for moving the polymer thin film formation process step by step through the polymerization reaction to move the polymer thin film formation process over the entire area of the substrate It includes a moving means for.
  • the chamber 100 provides a space isolated from the outside so that the deposition material is deposited on the substrate 20.
  • the interior of the chamber 100 is in a vacuum state, and the deposition process is performed in a vacuum.
  • the chamber 100 is provided with a vacuum pump (not shown) for forming a vacuum state.
  • a plurality of linear evaporation sources 400 are provided to step a polymer thin film forming process through a polymerization reaction by adding an initiator and a monomer to a part of the substrate surface.
  • the linear evaporation sources 400 are provided. As shown in FIG. 5, three evaporation sources are formed so that three steps of forming a polymer can be performed at each evaporation source.
  • the linear evaporation source 400 is a first evaporation source (400a) to form a monomer adsorption site by injecting the initiator and monomer to cause the polymerization reaction of the initiator and the monomer on the surface of the substrate 20, and the first evaporation source ( After the substrate on which the monomer adsorption site is formed is introduced at 400a), a second evaporation source 400b for forming a polymer through polymerization of the initiator and the monomer is removed, and the residual initiator is removed after the substrate on which the polymer is formed is introduced. And a third evaporation source 400c for stopping the reaction for control.
  • 400a first evaporation source
  • a showerhead assembly (not shown) is installed on the upper part of the evaporation source, thereby reacting the reaction gas. Can be introduced. In this case, an initiator and a plurality of monomers are simultaneously introduced through the showerhead assembly to form a structure which is ejected downward.
  • the first evaporation source 400a or the second evaporation source 400b at least two or more monomers and an initiator are added to form a vapor deposition material atmosphere. That is, in the present embodiment, two kinds of monomers are introduced and ejected, but the present invention is not limited thereto, and three or more kinds of reaction gases may be introduced and ejected.
  • the initiator is decomposed in the form of radical ions, and since the energy of the radical ions decreases according to the configuration of the entry path (curve, volume, etc.) of the access path, in order to minimize the collision before the radical ions formed at the top are ejected into the nozzle. It is preferable to configure so that it may eject from the top.
  • Such an evaporation source has the same structure, and as shown in FIG. 8, a plurality of nozzles 420 for injecting a deposition material to be deposited on the substrate 20 and a deposition material discharged through the nozzle 420 are narrow.
  • Evaporation source guide 410 distributed in a linear space of the volume to participate in the deposition polymerization reaction, provided inside the evaporation source guide 410, the deposition material ejected through the nozzle 420 radical (radical) It may include a wire heater 430 for activating.
  • the plurality of nozzles 420 may be spaced apart from each other at regular intervals so as to spray the deposition material evenly on the surface of the substrate 20.
  • the evaporation source guide 410 should be formed to guide the deposition material to a position adjacent to the substrate 20 so that the deposition material participates in the deposition polymerization reaction on the substrate surface. That is, the evaporation source guide 410 forms a narrow volume of linear space so that the deposition material participates in the deposition polymerization reaction on the substrate surface, as shown in FIG. 7, and is formed in a box shape extending in the width direction of the substrate 20. To achieve. In this case, as shown in FIG. 8, the evaporation source guide 410 has a cross-sectional shape of ' ⁇ ' having a lower surface opened, and the substrate 20 is placed on the opened lower surface.
  • the nozzle 420 is formed at a predetermined interval on the evaporation source guide 410, the wire heater 430 is provided between the nozzle 420 and the substrate 20.
  • the wire heater 430 radically activates the deposition material ejected through the nozzle 420 of the evaporation source.
  • the deposition material is an initiator
  • the initiator is activated by the wire heater 430 as a radical.
  • the wire heater 430 is composed of a plurality of heater wires, the radicals are activated by the heat energy supplied from the heater wires.
  • the plurality of heater wires are preferably spaced apart from each other at a predetermined interval with respect to the neighboring heater wires.
  • each of the plurality of heater wires may be arranged to correspond to each of the plurality of nozzles 420.
  • the initiator 132 in order to remove the residual initiator in the third evaporation source (400c), by additionally adding an initiator 132, the initiator 132 is decomposed into radical ions form and combined with the residual initiator to form a molecular By doing so, the residual initiator can be removed quickly, and the polymerization reaction can be blocked to facilitate the thickness control of the thin film.
  • the present invention minimizes damage (heat, plasma, etc.) transmitted from the wire heater 430 to the substrate using the linear evaporation source 400, and the most of the material discharged from the nozzle 420 is of a narrow size.
  • damage heat, plasma, etc.
  • the substrate 20 is made of a flexible substrate
  • the moving means may be made of a roll to roll (roll to roll) device.
  • the roll-to-roll apparatus includes a supply roller 250 for providing the flexible substrate 30 to a deposition position where the deposition material is deposited, and a recovery roller 260 for recovering the flexible substrate 30 on which the deposition material is deposited. And the direction rollers 230 and 240 positioned between the supply roller 250 and the recovery roller 260 to continuously supply the flexible substrate to the deposition position and to pass through the deposition position. And a supporter roller 300 supporting the substrate by receiving the substrate from the supply roller 250 so that the deposition material may be deposited on the substrate.
  • the flexible substrate 30 is flexible, and unlike the glass substrate, the flexible substrate 30 is continuous. Therefore, the flexible substrate 30 is transferred to the deposition position, and the flexible substrate 30 on which the deposition material is deposited is recovered from the deposition position. This process may be performed until all of the flexible substrate 30 wound on the supply roller 250 is deposited.
  • the supply roller 250 is wound on the flexible substrate 30 and is in a state before the deposition material is deposited. As the feed roller 250 rotates, the flexible substrate 30 wound up is released, and the flexible substrate 30 released from the feed roller 250 is moved to the deposition position.
  • the recovery roller 260 recovers the flexible substrate 30 on which the deposition material is deposited at the deposition position. In order to recover the flexible substrate 30, the recovery roller 260 is also rotated and recovered by winding the flexible substrate 30.
  • the direction rollers 230 and 240 are positioned between the supply roller 250 and the recovery roller 260 to assist the flexible substrate 30 to be continuously supplied to the deposition position and to pass through the deposition position. As shown in FIG. 5, the direction rollers 230 and 240 play an auxiliary role of positioning the flexible substrate 30 released from the supply roller 250 so as to pass through the deposition position.
  • the flexible substrate 30 is released from the supply roller 250 and is deposited while passing through the deposition position by the assistance of the direction rollers 230 and 240, and the finished flexible substrate 30 is finally recovered by a recovery roller ( 260 is recovered while winding.
  • the supporter roller 300 receives the flexible substrate 30 from the supply roller 250 side to support the flexible substrate 30 so that the deposition material may be deposited on the flexible substrate 30. And the supporter roller 300 is more preferably provided with a substrate cooling means that can cool the heat received while the deposition material is deposited on the flexible substrate 30.
  • the arrangement of the plurality of evaporation sources 400 is supported so that the distance between the plurality of evaporation sources 400 and the flexible substrate 30 can be kept constant while the flexible substrate 30 is supported by the supporter roller 300. It is preferable to form a virtual curved surface corresponding to the outer surface of the roller 300.
  • the shape of the virtual curved surface formed by the arrangement of the plurality of nozzles 420 is disposed at a predetermined distance with respect to the axis of rotation of the support controller 300, the virtual curved surface of which the cross section forms a floating arc It is preferably in the form of. In this case, since the distance (distance) with the nozzle 420 is kept constant while the flexible substrate 30 supported by the support controller 300 is deposited, a more uniform deposition thickness can be realized.
  • the support controller 300 can rotate, damage to the lower surface of the flexible substrate 30 is suppressed while supporting the flexible substrate 30 while being in contact with it.
  • the support controller 300 may further include a substrate cooling unit capable of cooling the heat received while the deposition material is deposited on the flexible substrate 30.
  • the coolant may pass through the support controller 300 along the central axis of rotation, thereby allowing the support controller 300 to cool the flexible substrate 30.
  • the substrate 20 may be formed of a plate-like substrate, as shown in FIG.
  • the moving means comprises a horizontal moving means for reciprocating the substrate 20 or the linear evaporation source 400 in a horizontal direction so as to scan the entire area of the substrate for the process of forming a polymer thin film.
  • a horizontal moving means for reciprocating the substrate 20 or the linear evaporation source 400 in a horizontal direction so as to scan the entire area of the substrate for the process of forming a polymer thin film.
  • the horizontal moving means is a conveyor apparatus including a plurality of rollers for moving the substrate to the position of the first evaporation source (400a) to the third evaporation source (400b) directly placed on the substrate 20, the conveyor It may include a driving device for driving the device.
  • the driving device may be a conventionally known technology such as a motor for driving the conveyor device, a detailed description thereof will be omitted.
  • the substrate 20 in the first evaporation source (400a) When the horizontal movement means is completed to form the monomer adsorption site on the substrate 20 in the first evaporation source (400a), the substrate 20, the process is completed is placed on the roller in the drive device Is moved so that it can be transferred from the first evaporation source (400a) to the second evaporation source (400b).
  • the substrate 20 transferred to the second evaporation source 400b forms a polymer through a polymerization reaction of an initiator and a monomer, and is transferred to the third evaporation source 400c in the same manner as described above, and then a third evaporation source ( By removing the residual initiator in 400c), the polymer thin film forming process can proceed in three steps.
  • the present invention by forming a plurality of linear evaporation source for the step of proceeding the polymer thin film forming process through the polymerization of the substrate, it is possible to improve the deposition rate and reduce the consumption of the material It works.
  • the gaseous substance exists in a narrow region, it is easy to control the concentration of the gaseous substance, and thus, it is advantageous to secure the overall uniformity of the substrate.
  • the present invention as described above can form a separate chamber for forming the polymerization reaction site of the substrate to improve the deposition rate and to reduce the consumption of the material, and to prevent the concentration of the gaseous substance for each position of the substrate to prevent the substrate Since the deposition uniformity of the thin film can be secured, it will be referred to as an invention having high industrial applicability.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne un système de dépôt chimique en phase vapeur à l'aide d'un initiateur, le système comprenant : une première chambre qui forme un site de réaction de polymérisation par alimentation d'un initiateur et d'un monomère afin de provoquer une réaction de polymérisation entre l'initiateur et la monomère sur la surface d'un substrat; une deuxième chambre qui forme un polymère par l'intermédiaire d'une réaction de polymérisation entre l'initiateur et le monomère après l'introduction, dans la chambre, du substrat sur lequel est formé, par la première chambre, le site de réaction de polymérisation; une troisième chambre qui arrête la réaction afin de commander l'épaisseur de dépôt par élimination de l'initiateur résiduel après que le substrat sur lequel est formé le polymère est introduit dans cette dernière; et un dispositif de transfert de substrat destiné à déplacer le substrat depuis la première chambre vers la troisième chambre par l'intermédiaire de la deuxième chambre, grâce à quoi il est possible d'améliorer la vitesse de dépôt et de réduire la consommation de matière lors de la mise en œuvre du procédé de dépôt à l'aide de l'initiateur.
PCT/KR2015/009511 2015-06-09 2015-09-10 Système de dépôt chimique en phase vapeur à l'aide d'initiateur Ceased WO2016199980A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2015-0081432 2015-06-09
KR10-2015-0081431 2015-06-09
KR1020150081432A KR101767154B1 (ko) 2015-06-09 2015-06-09 개시제를 이용하는 선형 화학기상증착시스템
KR1020150081431A KR101695230B1 (ko) 2015-06-09 2015-06-09 개시제를 이용하는 화학기상증착시스템

Publications (1)

Publication Number Publication Date
WO2016199980A1 true WO2016199980A1 (fr) 2016-12-15

Family

ID=57504164

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2015/009511 Ceased WO2016199980A1 (fr) 2015-06-09 2015-09-10 Système de dépôt chimique en phase vapeur à l'aide d'initiateur

Country Status (1)

Country Link
WO (1) WO2016199980A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040011288A1 (en) * 2002-02-26 2004-01-22 Affinito John D. Methods and apparatus for vacuum thin film deposition
US20110045349A1 (en) * 2009-08-24 2011-02-24 Applied Materials, Inc. 3d approach on battery and supercapacitor fabrication by initiation chemical vapor deposition techniques
US20130337615A1 (en) * 2012-05-25 2013-12-19 Applied Materials, Inc. Polymer hot-wire chemical vapor deposition in chip scale packaging
US20140178567A1 (en) * 2011-08-05 2014-06-26 3M Innovative Properties Company Systems and Methods for Processing Vapor
KR20150004576A (ko) * 2013-07-03 2015-01-13 (주)아이컴포넌트 플라스틱 필름 전극, 이의 제조방법, 및 이를 포함하는 디스플레이 제품

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040011288A1 (en) * 2002-02-26 2004-01-22 Affinito John D. Methods and apparatus for vacuum thin film deposition
US20110045349A1 (en) * 2009-08-24 2011-02-24 Applied Materials, Inc. 3d approach on battery and supercapacitor fabrication by initiation chemical vapor deposition techniques
US20140178567A1 (en) * 2011-08-05 2014-06-26 3M Innovative Properties Company Systems and Methods for Processing Vapor
US20130337615A1 (en) * 2012-05-25 2013-12-19 Applied Materials, Inc. Polymer hot-wire chemical vapor deposition in chip scale packaging
KR20150004576A (ko) * 2013-07-03 2015-01-13 (주)아이컴포넌트 플라스틱 필름 전극, 이의 제조방법, 및 이를 포함하는 디스플레이 제품

Similar Documents

Publication Publication Date Title
WO2013147481A1 (fr) Appareil et équipement en amas pour croissance épitaxiale sélective
WO2015057023A1 (fr) Appareil de traitement de substrat
WO2009102133A2 (fr) Dispositif de métallisation sous vide de couche atomique par lots
WO2015072691A1 (fr) Appareil et procédé de dépôt de couche atomique
KR101478151B1 (ko) 대면적 원자층 증착 장치
WO2017073901A1 (fr) Appareil de traitement de substrat et procédé d'assemblage d'ensemble tubulaire
WO2014030973A1 (fr) Appareil de traitement de substrat et procédé de traitement de substrat
WO2013095030A1 (fr) Appareil de traitement de substrat et procédé de traitement de substrat
WO2015105284A1 (fr) Dispositif de traitement de substrat
WO2017052100A1 (fr) Dispositif d'échappement d'appareil de traitement de plaquette
KR102173658B1 (ko) 기판처리시스템
WO2014157834A1 (fr) Appareil servant au traitement de substrat
US8052887B2 (en) Substrate processing apparatus
WO2014157835A1 (fr) Appareil servant au traitement de substrat
WO2017073902A1 (fr) Appareil de traitement de substrat
WO2016171452A1 (fr) Appareil de traitement de substrat et procédé pour chambre de nettoyage
WO2016199980A1 (fr) Système de dépôt chimique en phase vapeur à l'aide d'initiateur
WO2013191414A1 (fr) Appareil de traitement de substrat
KR101698021B1 (ko) 대면적 원자층 증착장치
KR101695230B1 (ko) 개시제를 이용하는 화학기상증착시스템
JPS63109174A (ja) 枚葉式ｃｖｄ装置
WO2021206351A1 (fr) Dispositif et procédé de traitement de substrat
WO2018135858A1 (fr) Source de dépôt et appareil de dépôt doté de ladite source de dépôt
WO2015034208A1 (fr) Dispositif de dépôt de couches atomiques de type empilé et son procédé
WO2015142131A1 (fr) Appareil de dépôt multi-type et procédé de formation de film mince l'utilisant

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15895048

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15895048

Country of ref document: EP

Kind code of ref document: A1