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WO2016197841A1 - 一种交叉指状y轴磁电阻传感器 - Google Patents

一种交叉指状y轴磁电阻传感器 Download PDF

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Publication number
WO2016197841A1
WO2016197841A1 PCT/CN2016/084255 CN2016084255W WO2016197841A1 WO 2016197841 A1 WO2016197841 A1 WO 2016197841A1 CN 2016084255 W CN2016084255 W CN 2016084255W WO 2016197841 A1 WO2016197841 A1 WO 2016197841A1
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WIPO (PCT)
Prior art keywords
sensing unit
comb
axis
push
magnetoresistive
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Ceased
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PCT/CN2016/084255
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English (en)
French (fr)
Inventor
迪克詹姆斯·G
周志敏
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MultiDimension Technology Co Ltd
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MultiDimension Technology Co Ltd
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Priority to JP2017564335A priority Critical patent/JP6812367B2/ja
Priority to US15/580,944 priority patent/US10393828B2/en
Priority to EP16806739.5A priority patent/EP3309572B1/en
Publication of WO2016197841A1 publication Critical patent/WO2016197841A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0017—Means for compensating offset magnetic fields or the magnetic flux to be measured; Means for generating calibration magnetic fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0011—Arrangements or instruments for measuring magnetic variables comprising means, e.g. flux concentrators, flux guides, for guiding or concentrating the magnetic flux, e.g. to the magnetic sensor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0094—Sensor arrays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/038—Measuring direction or magnitude of magnetic fields or magnetic flux using permanent magnets, e.g. balances, torsion devices

Definitions

  • the present invention relates to the field of magnetic sensors, and in particular to an interdigitated Y-axis magnetoresistive sensor.
  • X-axis and Y-axis magnetic sensors there is generally a single sensitive magnetic field direction, for example, magnetic field sensitivity in the X direction.
  • the X-direction magnetic field sensitive sensing unit is generally rotated by 90 degrees to obtain the Y-direction magnetic field sensitive unit.
  • a pull-type bridge in which the push arm and the wrist arm are in a discrete manufacturing form, that is, one of them is rotated 180 degrees relative to the other, and then connected in the form of a flying line between the push arm and the slice of the wrist arm.
  • the Y-axis magnetoresistive sensor proposed above mainly has the following problems:
  • the present invention proposes an interdigitated Y-axis magnetoresistive sensor, which adopts a cross-finger soft magnetic flux concentrator to realize a change of a magnetic circuit, thereby realizing a Y magnetic field into a -X and X direction.
  • the magnetic field component acts on the urging resistance sensing unit and the magnetizing resistance sensing unit respectively to realize the enhanced output of the Y magnetic field signal, and acts on the urging resistance sensing unit and the snoring resistance sensing when the X magnetic field passes
  • the X-direction magnetic field component on the cell can be offset.
  • the invention relates to an interdigitated Y-axis magnetoresistive sensor comprising a substrate, a first comb soft magnetic flux guide on the substrate, a second comb soft magnetic flux guide and a push-pull magnetic resistance transmission Sense unit bridge;
  • the first comb teeth of the first comb-shaped soft magnetic flux guide and the second comb and the second comb of the first comb and the second comb-shaped soft magnetic flux guide are both rectangular, the first comb
  • the long axis and the short axis of the second comb and the second comb are parallel to the Y axis and the X axis, respectively, and the first and second comb main axes and the minor axis are parallel to the X axis and the Y axis, respectively;
  • the push-pull magnetoresistive sensing unit bridge comprises a push-pull and magnet-resistance sensing unit string
  • the push-pull and magnet-resistance sensing unit strings each comprise a plurality of magnetoresistive sensing units connected in series and/or in parallel, and are parallel In the Y-axis direction, and alternately located in the first gap and the second gap
  • the push-pull and magnet-resistance sensing unit strings are respectively electrically connected into a push arm and a pull arm
  • the push arm and the arm include
  • the number of magnetoresistive sensing unit strings is the same, and the push arm and the arm are electrically connected to form a push-pull magnetoresistive sensing unit bridge, and the magnetoresistive sensing unit has an X-direction magnetic field sensitive direction.
  • a calibration coil and/or a reset coil including a calibration straight wire parallel to the push and pull magnetoresistive sensing cell strings, when the calibration current passes through the calibration coil, at the push and pull The magnetoresistive sensing unit string respectively generates calibration magnetic field components having the same amplitude along the X and -X directions;
  • the reset coil includes a reset straight wire perpendicular to the push and pull magnetoresistive sensing unit strings, when reset When the coil passes the reset current, the same magnetic field component of the amplitude is generated in the Y direction or the -Y direction at all the magnetoresistive sensing units.
  • All of the first comb teeth have the same size, all of the second comb teeth have the same size, all of the first gap sizes are the same, all of the second gap sizes are the same, the first gap size and the second gap The same size.
  • the magnetoresistive sensing unit is a GMR spin valve or a TMR sensing unit, wherein the pinning layer direction is parallel to the Y axis direction, and the free layer direction is parallel to the X axis direction.
  • the magnetoresistive sensing unit makes the magnetization direction of the magnetic free layer perpendicular to the magnetization direction of the magnetic pinning layer by permanent magnet bias, double exchange action, shape anisotropy or any combination.
  • the push-pull magnetoresistive sensing unit bridge is a half bridge, a full bridge or a quasi bridge.
  • N is an integer greater than 1, and the string of the magnetoresistive sensing unit and the string of the magnetizing resistors are alternately distributed in 2*N Within the first gap and the second gap.
  • N is an integer greater than 1, and the string of the magnetoresistive sensing unit and the string of the magnetizing resistors are alternately distributed except in the middle. ???the first gap and the other 2*N of the first gap and the second gap except the second gap.
  • the push magnetoresistive sensing unit string and the magnetizing resistive sensing unit string are alternately distributed in the first gap and the second gap.
  • Each of the magnetoresistive sensing unit strings has a string of magnetoresistive sensing elements symmetrical with respect to an X-axis centerline of the first comb-shaped soft magnetic flux concentrator.
  • the X and -X ends of the first and second combs are aligned.
  • the Y-axis magnetoresistive sensor further includes two identical soft magnetic flux concentrator strips, and the two soft magnetic flux concentrator strips are respectively located in the first comb-shaped soft magnetic flux concentrator and the second comb-shaped soft magnetic flux
  • the X-end and -X-end of the concentrator are the same distance from both ends.
  • the calibration coil includes a push calibration straight wire and a pull calibration straight wire, the positional relationship between the push calibration straight wire and the corresponding push magnetoresistive sensing cell string and the pull calibration straight wire and the corresponding magnetic resistance sensing cell string.
  • the positional relationship is the same, the positional relationship is that the calibration straight wire is directly above or directly below the corresponding magnetoresistive sensing cell string, and the push calibration straight wire and the pull calibration straight wire are connected in series And have opposite current directions.
  • the calibration coil includes a push calibration straight wire and a pull calibration straight wire, the push calibration straight wire and the pull calibration straight wire each comprise two parallel aligned straight wires connected in parallel, and the two push-pull straight wires and two The spacing between the straight lines of the calibrated straight wires is the same, and is symmetrically distributed on both sides of the push and pull magnetoresistive sensing unit strings, and the push calibration straight wires and the pull calibration straight wires are connected in series Connected and have opposite current directions.
  • the reset coil is a planar coil, and the reset straight wire is included perpendicular to the push magnetoresistive sensing unit string and the magnetizing resistance sensing unit string, and is located directly above or directly below each magnetoresistive sensing unit, and The current direction is the same.
  • the reset coil is a three-dimensional coil, and the three-dimensional coil is wound around the first comb-shaped soft magnetic flux guide, the second comb-shaped soft magnetic flux guide, and the magnetoresistive sensing unit, and the reset straight wires are respectively located
  • the soft magnetic flux director and the magnetoresistive sensing unit surface, the reset straight wires having the same arrangement interval on the surface.
  • the calibration coil includes a positive port and a negative port. When both ends pass current, the calibration magnetic field amplitude generated is within a linear working area of the magnetoresistive sensing unit.
  • the calibration current can be set to one current value or multiple current values.
  • the reset coil includes two ports, and when the two ports pass current, the generated reset magnetic field is higher than the saturation magnetic field value of the magnetoresistive sensing unit.
  • the reset current is a pulse current or a direct current.
  • the reset coil and the calibration coil are high conductivity materials, and the high conductivity material is Cu, Au, Ag or Al.
  • the soft magnetic flux concentrator is an alloy soft magnetic material containing one or more of Fe, Ni, and Co elements.
  • the substrate material is a glass or silicon wafer and the substrate contains an ASIC or the substrate is connected to another ASIC chip.
  • the reset and/or calibration coil is located above the substrate, under the magnetoresistive sensing unit, or between the magnetoresistive sensing unit and the soft magnetic flux director, or the soft magnetic flux director Above.
  • the reset and/or calibration coil and the first comb soft magnetic flux guide, the second comb soft magnetic same amount guide, and the push-pull magnetoresistive sensing unit bridge are insulated by an insulating material.
  • the insulating material is SiO2, Al2O3, Si3N4, polyimide or photoresist.
  • Figure 1 is a basic structural view of an interdigitated Y-axis magnetoresistive sensor
  • FIG. 2 is a schematic diagram of the magnetic field measurement of the interdigitated Y-axis magnetoresistive sensor Y;
  • FIG. 3 is a cross-referential Y-axis magnetoresistive sensor Y magnetic field push, magnetic resistance sensor unit string sensitive magnetic field distribution diagram
  • Figure 4 is a magnetic field measurement diagram of the interdigitated Y-axis magnetoresistive sensor X;
  • FIG. 5 is a cross-referential Y-axis magnetoresistive sensor X magnetic field push, magnetoresistive sensor unit string sensitive magnetic field distribution diagram
  • Figure 8 is a diagram showing the electrical connection of the interdigitated Y-axis magnetoresistive sensor when the number of the first finger of 2N+1 is 2;
  • FIG. 9 is a full bridge structure diagram of a push-pull magnetoresistive sensing unit
  • Figure 10 is a diagram showing the electrical connection of the interdigitated Y-axis magnetoresistive sensor when the number of the first finger of 2N+2 is 2;
  • Figure 11 is an electrical connection diagram of a Y-axis magnetoresistive sensor with straight strips at both ends;
  • Figure 12 is an electrical connection diagram of the interdigitated Y-axis magnetoresistive sensor of the structure-calibration coil
  • Figure 13 is a distribution diagram of a calibrated DC magnetic line generated by a calibration current of a calibration coil
  • Figure 14 is a diagram showing a calibration magnetic field component distribution at a magnetoresistive sensing unit string of a calibration coil
  • Figure 15 is a diagram showing the electrical connection of the interdigitated Y-axis magnetoresistive sensor of the structure two calibration coil;
  • Figure 16 is a calibration DC magnetic line distribution diagram generated by the calibration current of the structure two calibration coils
  • 17 is a distribution diagram of a calibration magnetic field component at a magnetoresistive sensing unit string of a structure two calibration coil;
  • Figure 18 is a diagram showing the electrical connection of the interdigitated Y-axis magnetoresistive sensor of the planar reset coil
  • Figure 19 is a diagram showing a reset DC magnetic line distribution generated by a reset current of a planar reset coil
  • Figure 20 is a diagram showing a reset magnetic field distribution of a planar reset coil at a magnetoresistive sensing unit string
  • 21 is an electrical connection diagram of an interdigital Y-axis magnetoresistive sensor of a three-dimensional reset coil
  • Figure 22 is a diagram showing a reset DC magnetic line distribution generated by a reset current of a three-dimensional reset coil
  • FIG. 23 is a distribution diagram of a reset magnetic field component at a magnetoresistive sensing unit string of a three-dimensional reset coil
  • Figure 24 is a cross-sectional view showing the basic structure of an interdigitated soft magnetic Y-axis magnetoresistive sensor
  • Figure 25 is a cross-sectional view showing the basic structure of an interdigitated soft magnetic Y-axis magnetoresistive sensor with a structure-calibration coil;
  • Figure 26 is a cross-sectional view showing the basic structure of an interdigitated soft magnetic Y-axis magnetoresistive sensor with a structure two calibration coil;
  • Figure 27 is a cross-sectional view showing the basic structure of an interdigitated soft magnetic Y-axis magnetoresistive sensor with a planar reset coil;
  • Figure 28 is a cross-sectional view showing the basic structure of an interdigitated soft magnetic Y-axis magnetoresistive sensor with a three-dimensional reset coil;
  • Figure 29 is a cross-sectional view showing the basic structure of an interdigital soft magnetic Y-axis magnetoresistive sensor with a reset coil and a calibration coil.
  • FIG. 1 is a basic structural view of an interdigitated Y-axis magnetoresistive sensor, comprising a substrate 1, a first comb-shaped soft magnetic flux guide 4 on the substrate 1, and a second comb-shaped soft magnetic flux guide 7, And a push-pull magnetoresistive sensing unit bridge 14 comprising N+1 first comb teeth 2(1), 2(2)...2(N+1) and a first comb base 3, the first comb teeth are elongated, the long axis thereof is parallel to the Y axis, and the short axis is parallel to the X axis, and the first comb teeth are the same size and parallel to each other and have the same pitch, N +1 first comb teeth are aligned with the -Y end and connected to the first comb seat 3, the first comb base 3 is also elongated, with a long axis parallel to the X axis and a short axis parallel to the Y axis;
  • the second comb soft magnetic flux guide 7 includes N second comb teeth
  • An interdigitated structure is formed between the first comb-shaped soft magnetic flux guide 4 and the second comb-shaped flux guide 7, wherein the second comb is as described in 6(1) and adjacent thereto
  • the first combs such as 2(1) and 2(2), alternately form a first gap having the same width gapy, such as 8 and a second gap, such as 9, and the second comb, such as 6(1)
  • a third gap 10 having lengths gapx1 and gapx2 is alternately formed between the first comb fingers, such as 2(1), 2(2) and the second comb base 5, respectively.
  • a fourth gap 11 is alternately formed between the first comb fingers, such as 2(1), 2(2) and the second comb base 5, respectively.
  • the push-pull magnetoresistive sensing unit bridge 14 includes at least one push arm and one pull arm, the push arm includes at least one push magnetoresistive sensing unit string 12, the arm includes at least one magnetizing resistor a sensing unit string 13 comprising a plurality of magnetoresistive sensing units connected in series or in parallel, the push arm and the arm having the same number of magnetoresistive sensing unit strings, the push magnet resistor
  • the sensing unit string and the magnetizing resistance sensing unit string are both parallel to the Y-axis direction and alternately located in the first gap 8 and the second gap 9, and the magnetoresistive sensing unit has an X-direction magnetic field sensitive direction Wherein 15, 15, 17, and 18 correspond to the ground end of the push-pull magnetoresistive sensing unit bridge 14, the power input end, and the signal output ends of the two half bridges, respectively.
  • FIG. 2 is a schematic diagram showing the measurement of the Y magnetic field of the interdigitated Y-axis magnetoresistive sensor, and it can be seen that the intersection formed between the first comb-shaped soft magnetic flux guide 4 and the second comb-shaped soft magnetic flux guide 7 is obtained.
  • a finger structure alternately forming magnetic field components 19 and 20 having -X and X directions at the first gap 8 and the second gap 9, and acting on the magnetoresistive sensing unit string 12 and the magnetizing resistance sensing unit string, respectively 13. Its Hx magnetic field distribution characteristics are shown in Fig. 3. It can be seen that the Hx magnetic fields at the first gap 8 and the second gap 9 are the same in magnitude and opposite in direction.
  • FIG. 4 is a schematic diagram showing the measurement of the X magnetic field by the interdigitated Y-axis magnetoresistive sensor, and it can be seen that the interdigitated shape formed between the first comb-shaped soft magnetic flux guide 4 and the second comb-shaped soft magnetic flux guide 7 is obtained.
  • the structure forms magnetic field components 21 and 22 having the same magnetic field orientation as X at the first gap 8 and the second gap 9, and acts on the magnetoresistive sensing unit string 12 and the magnetizing resistance sensing unit string 13, respectively.
  • Figure 5 shows the distribution of the Hx magnetic field at the first gap and the second gap. It can be seen that the Hx magnetic field distribution has a characteristic of being symmetric with respect to the center, which is a push-resistance sensing unit for the push-pull magnetoresistive sensing unit.
  • the distribution of the string and the magnetoresistive sensing unit string at the first gap and the second gap imposes the same symmetry requirement, that is, for the first gap position where any of the magnetoresistive sensing unit strings are located, correspondingly one magnetic field is required.
  • the resistance sensing unit string has a second gap having the same Hx magnetic field component with respect to the first gap position, so as to ensure the cancellation of the X external magnetic field.
  • Figure 8 is a structural diagram of the interdigitated Y-axis magnetoresistive sensor when the number of comb teeth of the first interdigital soft magnetic flux guide is 25 (1), 25 (2) ... 25 (2N + 1), 2N + 1 in total,
  • the number of the magnetoresistive sensing unit strings alternately located in the first gap and the number of the magnetoresistive sensing unit strings located in the second gap are 4N, and the magnetoresistive sensing unit string and the magnetizing resistance sensing unit are The strings are alternately located in all of the first gap and the second gap, and the electrical connection diagram is as shown in FIG. 8.
  • the full bridge push-pull structure is shown in FIG.
  • Figure 10 is a structural view of the interdigitated Y-axis magnetoresistive sensor when the number of comb teeth of the first comb-shaped soft magnetic flux guide is 26 (1), 26 (2) ... 26 (2N + 2), 2N + 2 in total, At this time, in order to make the number of the magnetoresistive sensing unit strings alternately located in the first gap and the number of the magnetoresistive sensing unit strings located in the second gap 4N, it is necessary to simultaneously reduce one magnetoresistive sensing unit string.
  • magnetoresistive sensing unit string while taking into account the symmetry requirement of the Hx magnetic field, it is required that if any one of the magnetoresistive sensing unit strings is missing, a series of magnetoresistive sensing unit strings are simultaneously missing, and The push magnetoresistive sensing unit string and the magnetizing resistor sensing unit string are symmetrical with respect to the Y center line.
  • the magneto-resistance sensing unit string and the magnetizing resistance sensing unit are electrically connected to form a full bridge. In actual cases, it can also be electrically connected into a half bridge or a quasi-bridge structure.
  • Figure 11 is another form of the interdigitated Y-axis magnetoresistive sensor, in addition to the interdigitated structure formed by the first comb-shaped soft magnetic flux guide and the second comb-shaped soft magnetic flux guide, X and -X
  • Two strip-shaped soft magnetic flux guides 27 and 28 are introduced at both ends, and the long-shaped soft magnetic flux guides have a Y-direction length spanning the -Y end to the +Y end of the interdigitated soft magnetic flux guide, and are aligned. And the same distance from the -X and +X ends.
  • Figure 12 is a structural view of the calibration coil 29 of the interdigitated Y-axis magnetoresistive sensor, including calibration straight wires 30 and 31 parallel to the magnetoresistive sensing cell string and the magnetizing resistance sensing cell string, the calibration straight wire 30 is located Directly above or directly below the string of the magnetoresistive sensing unit, the calibration straight wire 31 is located directly above or directly below the string of the magnetoresistive sensing unit, and becomes the push calibration straight wire 30 and the pull calibration straight wire 31, respectively. Have opposite current directions and connect in series. It should be noted that when the push calibration straight wire 30 is located directly above (directly below), the pull straight wire 31 is also located directly above (directly below).
  • Figure 13 is a magnetic field distribution characteristic of the calibration coil 29 on the interdigitated Y-axis magnetoresistive sensor. It can be seen that the push-aligned straight wire and the aligned straight wire generate a reverse magnetic field at the first gap and the second gap. distributed.
  • Figure 14 shows the X-direction magnetic field distribution at the string of the magneto-resistance sensing unit and the magnetizing resistor unit. It can be seen that the magneto-resistance sensing unit and the magnetizing resistor unit have opposite magnetic field distribution characteristics. The same, opposite directions, in line with the characteristics of the Y-calibrated magnetic field of the push-pull magnetoresistive sensing unit bridge.
  • Figure 15 is a block diagram of another type of calibration coil 32 on an interdigitated Y-axis magnetoresistive sensor, including a push-aligned straight lead 33 and a pull-aligned straight lead 34, the push-calibrated straight lead 33 comprising two parallel Calibrating the fader straight wires 33(1) and 33(2), respectively, and parallel to the push magnetoresistive sensing unit strings, and symmetrically located on both sides of the magnetoresistive sensing unit string;
  • the straight wire 34 includes two parallel aligning calibrator straight wires 34(1) and 34(2), and are respectively parallel to the string of the magnetizing resistance sensing unit, and are symmetrically located on the string of the magnetizing resistance sensing unit. On both sides, and the two push calibrator straight wires and the two pull calibrator straight wires have the same distance.
  • the push calibration straight wire 33 and the pull calibration straight wire 34 are connected in series, and the current directions are opposite.
  • FIG. 16 is a magnetic field distribution diagram of the calibration coil 32 corresponding to FIG. 15 on the interdigitated Y-axis magnetoresistive sensor. It can be seen that the two parallel push aligners corresponding to the push calibration straight wire 33 and the pull calibration straight wire 34 are straight. A closed magnetic coil is formed between the wire and the two parallel aligning straight wires, and an antisymmetric distribution feature is formed at the junction.
  • the Hx-direction magnetic field distribution characteristic at the string of the magneto-resistance sensing unit string and the magnetizing resistance sensing unit is as shown in FIG. 17, and it can be seen that the magneto-resistance sensing unit string and the magnetizing resistor are transmitted.
  • the sensing element string has the same size and opposite direction of the Hx magnetic field distribution characteristic, and is in accordance with the Y calibration magnetic field function of the push-pull magnetoresistive sensing unit bridge.
  • FIG. 18 is a structural diagram of a planar reset coil 35 on an interdigitated Y-axis magnetoresistive sensor, including a parallel reset straight wire 36 perpendicular to a series of push magnetoresistive sensing unit strings and a magnetizing resistance sensing unit string,
  • the reset straight wire is located directly above or below the push magnetoresistive sensing unit and has the same current direction, and the straight wire 37 is located at a gap of the adjacent two magnetoresistive sensing units, thereby forming a series structure .
  • Figure 19 is a magnetic field distribution diagram of the planar reset coil 35 on the interdigitated Y-axis magnetoresistive sensor. It can be seen that the adjacent two straight wires 36 and 37 have opposite magnetic field distribution characteristics and respectively form two magnetic wire loops.
  • Figure 20 shows the Hx magnetic field distribution characteristics of the magneto-resistance sensing unit string and the magnetizing resistance sensing unit string.
  • the magneto-resistance sensing unit string and the magnetizing resistance sensing unit string have the same The Hx magnetic field component, in the case where the reset straight wires have the same distribution pitch, even if the push magnetoresistive sensing cell string and the magnetizing resistive sensing cell string are not directly above or below the reset straight wire, It is ensured that the magneto-resistance sensing unit string and the magnetizing resistance sensing unit string have the same Hx reset magnetic field component.
  • 21 is a structural distribution diagram of the three-dimensional reset coil 38 on the interdigitated Y-axis magnetoresistive sensor. It can be seen that the three-dimensional reset coil 38 includes a string perpendicular to the magnetoresistive sensing unit string and the magnetoresistive sensing unit.
  • Parallel straight wires 39 and 40 and form a wound magnetoresistive sensing unit string and a soft magnetic flux concentrator to form a three-dimensional structure for the magnetic core, wherein the straight wire 39 is located on the lower surface of the soft magnetic flux concentrator to form an equidistant arrangement structure, and the straight wire 40 is located The upper surface of the soft magnetic flux concentrator is formed with an equidistant arrangement, and the straight wires 39 are located on the lower surface of the soft magnetic flux concentrator to form an equidistant arrangement.
  • FIG. 22 is a magnetic field distribution diagram of the three-dimensional reset straight wire 38 on the interdigitated Y-axis magnetoresistive sensor. It can be seen that the upper reset straight wire 39 and the lower reset straight wire 40 are distributed in the push magnet resistance sensing unit string. The distribution of the magnetic lines of force is periodically generated at the string of the magnetoresistive sensing unit, and the magnetic lines of the adjacent two straight wires are distributed in opposite directions.
  • FIG. 23 is a Hx magnetic field distribution curve generated by the three-dimensional reset straight wire 38 at the urging resistance sensing unit and the magnetizing resistance sensing unit of the interdigitated Y-axis magnetoresistive sensor. It can be seen that the upper layer resets the straight wire 39. And the underlying reset straight wire 40 has a periodic distribution characteristic of the Hx magnetic field component generated at the push magnetoresistive sensing cell string and the magnetizing resistance sensing unit, as long as the upper straight wire and the lower straight wire have a uniform periodic spacing, regardless of Whether the straight wire is directly above or below the push magnet resistance sensing unit or the magnetizing resistance sensing unit can maintain a uniform magnetic field distribution characteristic, thereby obtaining a uniform resetting magnetic field.
  • Figure 24 is a cross-sectional view showing the basic structure of the interdigital Y-axis magnetoresistive sensor. It can be seen that the magneto-resistance sensing unit string 101 and the magnetizing resistor sensing unit string 102 are located above the substrate 1, and are located at a first gap formed by a comb-shaped soft magnetic flux concentrator 103 and a second comb-shaped soft magnetic flux concentrator 104, and a second gap formed by the second comb-shaped soft magnetic flux concentrator 104 and the first comb-shaped soft magnetic flux concentrator 105
  • 106 is the insulating layer between the multilayer film and the electrode layer of the magneto-resistance sensing unit 101 and the magnetizing resistance sensing unit 102
  • 107 is an insulating layer between the soft magnetic flux concentrator and the magnetoresistive sensing unit electrode.
  • 108 is a protective layer of the interdigitated Y-axis magnetoresistive sensor
  • 109 is an output input electrode of the interdigitated Y-axis magnetores
  • 25 is a cross-sectional view showing the basic structure of a cross-finger Y-axis magnetoresistive sensor including a structure-aligning coil, wherein 110 is a push-calibrated straight wire, 111 is a straight-collected straight wire, and the push-pull-aligned straight wires are respectively located at
  • the magnetoresistive sensing unit string 101 and the magnetoresistive sensing unit string 102 are directly above or directly below, and are located directly above the string of push and pull magnetoresistance sensing units in the figure, and may actually be located on the substrate. Above, the area between the magnetoresistive sensing unit and the area between the magnetoresistive sensing unit and the soft magnetic flux concentrator can also be located above the soft magnetic flux concentrator.
  • 26 is a cross-sectional view showing the basic structure of a cross-finger Y-axis magnetoresistive sensor including a structure two calibration coil, wherein 112 is a push-calibrated straight wire, and includes two pusher-straight wires 112(1) and 112 (2) connected in parallel. ), the two faders are also 113 for aligning the straight wire, comprising two parallel wires 113(1) and 113(2) connected in parallel, and the two fader straight wires 112(1) and 112(2) are symmetric.
  • two pull-straight wires 113(1) and 113(2) are symmetrically located on both sides of the magnetizing resistor string 102, and 113(1) and 113 (2)
  • the distance from the magnetizing resistor sensing unit string 102 is equal to the distance between 112(1) and 112(2) and the magnetizing resistor 101, and the structure 2 aligns the straight wire in the structure Located above the magnetoresistive sensing unit, under the soft magnetic flux director, it can actually be located above the substrate, under the magnetoresistive sensing unit, and above the soft magnetic flux director, where 108(1) insulation It is used to ensure electrical insulation between the magnetoresistive sensing unit and the soft magnetic flux concentrator.
  • Figure 27 is a cross-sectional view showing the basic structure of a cross-finger Y-axis magnetoresistive sensor including a planar reset coil, wherein the reset coil 114 includes straight wires perpendicular to the push and pull magnetoresistive sensing cell strings 101 and 102, which are located Above the substrate, under the magnetoresistive sensing unit, the 106(1) insulating layer is to ensure electrical insulation between the reset coil 114 and the magnetoresistive sensing units 101 and 102. In fact, the reset coil 114 can also be located. Between the magnetoresistive sensing unit and the soft magnetic flux director, and above the soft magnetic flux director.
  • FIG. 28 is a cross-sectional view of a cross-finger Y-axis magnetoresistive sensor including a three-dimensional reset coil, wherein the three-dimensional reset coil 115 includes straight wires perpendicular to the push-pull magnetoresistive sensing cell strings 101 and 102, and respectively surrounds the The magnetoresistive sensing unit and the soft magnetic flux director, 108(1) and 106(2) are respectively electrically insulating insulating layers between the three-dimensional reset coil 115 and the magnetoresistive sensing unit string and the soft magnetic flux concentrator.
  • FIG 29 is a cross-sectional view showing a basic structure of a cross-finger Y-axis magnetoresistive sensor including a calibration coil and a reset coil, wherein the calibration coil may be of any of the types of FIGS. 25 and 26, and its position may be above the substrate.
  • the reset coil Under the magnetoresistive sensing unit, between the magnetoresistive sensing unit and the soft magnetic flux director, above the soft magnetic flux director, or between the first and second gaps, the reset coil can also be in Figures 27 and 28.
  • planar reset coil can be located above the substrate, under the magnetoresistive sensing unit, above the magnetoresistive sensing unit, under the soft magnetic flux director, above the soft magnetic flux director, three-dimensional weight
  • the coil surrounds the magnetoresistive sensing unit and the soft magnetic flux director.
  • This figure only shows the calibration coil including the type one, and is located between the first gap and the second gap.
  • the reset coil is located above the substrate, and the soft magnetic flux guides. A situation in the area between devices.
  • the reset current can be a pulse current or a direct current.
  • the reset coil and the calibration coil are high conductivity materials such as Cu, Au, Ag or Al.
  • the soft magnetic flux concentrator is an alloy soft magnetic material containing one or more of elements such as Fe, Ni or Co.
  • the substrate material is glass, silicon wafer, and the substrate contains an ASIC, or the substrate is connected to another ASIC chip.
  • the reset/calibration coil and the first comb soft magnetic flux guide, the second comb soft magnetic equal amount guide, and the push-pull magnetoresistive sensing unit bridge are separated by an insulating material, and the insulation is insulated.
  • the material is SiO2, Al2O3, Si3N4, polyimide or photoresist.

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Abstract

一种交叉指状Y轴磁电阻传感器，包括衬底（1）、位于衬底（1）上的第一梳状软磁通量引导器（4）、第二梳状软磁通量引导器（7）、推挽式磁电阻传感单元电桥（14），还可包括校准和/或重置线圈，第一、第二梳状软磁通量引导器（4，7）形成交叉指状，第二梳齿（6（1））和相邻的两个第一梳齿（2（1），2（2））间形成第一间隙（8）和第二间隙（9），且第二梳齿（6）与第一梳座（3）间、第一梳齿（2）与第二梳座（5）间分别形成间隙（10，11），推磁电阻单元串（12）和挽磁电阻单元串（13）交替位于第一间隙（8）和第二间隙（9）内，且磁电阻传感单元为X磁场敏感方向，校准线圈包括平行于磁电阻传感单元串的校准直导线，重置线圈分别垂直于磁电阻传感单元串的重置直导线，通过交叉梳状软磁通量引导器，实现了对Y轴磁场测量，具有简单、高增益和低功耗特点。

Description

一种交叉指状Y轴磁电阻传感器
技术领域
本发明涉及磁性传感器领域，特别涉及一种交叉指状Y轴磁电阻传感器。
背景技术
在两轴和三轴磁性罗盘芯片设计过程中，需要同时用到X轴和Y轴磁敏传感器，对于磁电阻类型的传感单元，一般具有单一的敏感磁场方向，例如为X方向磁场敏感，对于Y方向磁场敏感的获得，一般采用将X方向磁场敏感传感单元旋转90度，以此来获得Y方向磁场敏感单元，其次，为了提高X或者Y轴磁电阻传感器的磁场灵敏度，通常采用推挽式电桥，其中推臂和腕臂采用分立制造的形式，即将其中的一个相对于另一个相对旋转180度，而后在推臂和腕臂的切片之间采用飞线的形式进行连接。
以上提出的Y轴磁电阻传感器主要存在如下问题：
1） 在同一平面上同时制备X和Y轴磁电阻传感器时，由于X和Y轴磁电阻传感器都为分立元件，因此无法实现集成制造，增加了工艺的负责性，并影响了两轴或三轴传感器的测量精度。
2） 推臂和腕臂无法实现集成制造的工艺，采用分立切片飞线连接的工艺，同样增加了工艺的复杂性，影响传感器的测量精度。
发明内容
为了解决以上存在的问题，本发明提出了一种交叉指状Y轴磁电阻传感器，采用交叉指状的软磁通量集中器来实现磁路的改变，实现将Y磁场转变成-X和X方向的磁场分量，且分别作用于推磁电阻传感单元和挽磁电阻传感单元，实现Y磁场信号的增强输出，而当X磁场通过时，作用在推磁电阻传感单元和挽磁电阻传感单元上的X向磁场分量可以实现抵消。
本发明所提出的一种交叉指状Y轴磁电阻传感器，包括衬底、位于衬底之上的第一梳状软磁通量引导器、第二梳状软磁通量引导器及推挽式磁电阻传感单元电桥；
所述第一梳状软磁通量引导器的第一梳齿和第一梳座和所述第二梳状软磁通量引导器的第二梳齿和第二梳座均为矩形，所述第一梳齿和所述第二梳齿长轴和短轴分别平行于Y轴和X轴，所述第一梳座和第二梳座长轴和短轴分别平行于X轴和Y轴；
所述第一梳状软磁通量引导器和所述第二梳状软磁通量引导器之间形成交叉指状结构，相邻所述第一梳齿和所述第二梳齿之间依次交替形成第一间隙和第二间隙，且所述第二梳齿与所述第一梳座之间、所述第一梳齿与所述第二梳座之间也形成间隙；
推挽式磁电阻传感单元电桥包括推、挽磁电阻传感单元串，所述推、挽磁电阻传感单元串均包括多个串联和/或并联的磁电阻传感单元，且平行于Y轴方向，并交替位于所述第一间隙和第二间隙内,所述推、挽磁电阻传感单元串分别电连接成推臂和挽臂，所述推臂和挽臂包含的所述磁电阻传感单元串数量相同，且所述推臂和挽臂电连接成推挽式磁电阻传感单元电桥，所述磁电阻传感单元具有X向磁场敏感方向。
还包括校准线圈和/或重置线圈，所述校准线圈包括平行于所述推、挽磁电阻传感单元串的校准直导线，当校准电流通过所述校准线圈时，在所述推、挽磁电阻传感单元串处分别产生沿X和-X方向幅度相同的校准磁场分量；所述重置线圈包括垂直于所述推、挽磁电阻传感单元串的重置直导线，当重置线圈通重置电流时，在所有磁电阻传感单元处沿Y方向或-Y方向产生幅度相同磁场分量。
所有所述第一梳齿尺寸相同，所有所述第二梳齿尺寸相同，所有所述第一间隙尺寸相同，所有所述第二间隙尺寸相同，所述第一间隙尺寸和所述第二间隙尺寸相同。
所述磁电阻传感单元为GMR自旋阀或者TMR传感单元，其中钉扎层方向平行于Y轴方向，自由层方向为平行于X轴方向。
没有外加磁场时，所述磁电阻传感单元通过永磁偏置、双交换作用、形状各向异性或者任意结合来使磁性自由层的磁化方向与磁性钉扎层的磁化方向垂直。
所述推挽式磁电阻传感单元电桥为半桥、全桥或者准桥。
所述第一梳齿数量为2*N+1时，N为大于1的整数，所述推磁电阻传感单元串和所述挽磁电阻传感单元串交替分布在2*N个所述第一间隙和所述第二间隙内。
所述第一梳齿数量为2*N+2时，N为大于1的整数，所述推磁电阻传感单元串和所述挽磁电阻传感单元串交替分布在除位于正中间的所述第一间隙和所述第二间隙之外的其他2*N个所述第一间隙和所述第二间隙内。
所述第一梳齿数量为2时，所述推磁电阻传感单元串和所述挽磁电阻传感单元串交替的分布在所述第一间隙和所述第二间隙内。
任一个所述推磁电阻传感单元串均有一个与之相对于所述第一梳状软磁通量集中器的X轴中心线对称的所述挽磁电阻传感单元串。
随着所述第一梳齿宽度Lx10和所述第二梳齿宽度Lx20之和相对于所述第一间隙、所述第二间隙宽度gapy的比率（Lx10+Lx20）/gapy增加，所述推挽式磁电阻传感单元电桥增益增加。
所述第一梳座和第二梳座的X端和-X端均对齐。
所述的Y轴磁电阻传感器还包括两条相同的软磁通量集中器长条，两条所述软磁通量集中器长条分别位于所述第一梳状软磁通量集中器和第二梳状软磁通量集中器的X端及-X端，且距离两端相同距离。
所述校准线圈包括推校准直导线和挽校准直导线，所述推校准直导线和对应推磁电阻传感单元串之间的位置关系与挽校准直导线和对应挽磁电阻传感单元串之间的位置关系相同，所述位置关系为所述校准直导线位于对应的磁电阻传感单元串的正上方或正下方，且所述推校准直导线和所述挽校准直导线之间串联连接，并具有相反的电流方向。
所述校准线圈包括推校准直导线和挽校准直导线，所述推校准直导线、挽校准直导线均包括并联连接的两条平行的校准直导线，且两条所述推校准直导线和两条所述挽校准直导线之间的间距相同，且分别对称分布于所述推、挽磁电阻传感单元串的两侧，且所述推校准直导线和所述挽校准直导线之间串联连接，并具有相反的电流方向。
所述重置线圈为平面线圈，包含的重置直导线垂直于推磁电阻传感单元串和挽磁电阻传感单元串，且位于每个磁电阻传感单元的正上方或者正下方，且电流方向一致。
所述重置线圈为三维线圈，所述三维线圈缠绕所述第一梳状软磁通量引导器、第二梳状软磁通量引导器以及所述磁电阻传感单元，所述重置直导线分别位于所述软磁通量引导器和磁电阻传感单元表面，所述重置直导线在所述表面上具有相同排列间隔。
所述校准线圈包含一个正的端口和一个负的端口，两端通过电流时，其所产生的校准磁场幅度范围在所述磁电阻传感单元的线性工作区域内。
所述校准电流可以设定为一个电流值或多个电流值。
所述重置线圈包含两个端口，当两端口通过电流时，其所产生的重置磁场大小为高于所述磁电阻传感单元的饱和磁场值。
所述重置电流为脉冲电流或直流电流。
所述重置线圈和校准线圈为高导电率材料，所述高导电率材料为Cu,Au,Ag或Al。
所述软磁通量集中器为包含Fe,Ni,Co元素中的一种或多种的合金软磁材料。
所述衬底材料为玻璃或硅片，且所述衬底上含有ASIC或所述衬底与另外的ASIC芯片相连接。
所述重置和/或校准线圈位于所述衬底之上、磁电阻传感单元之下，或者所述磁电阻传感单元和所述软磁通量引导器之间、或者所述软磁通量引导器之上。
所述重置和/或校准线圈和所述第一梳状软磁通量引导器、第二梳状软磁同量引导器、推挽式磁电阻传感单元电桥之间采用绝缘材料隔离，所述绝缘材料为SiO2,Al2O3,Si3N4,聚酰亚胺或光刻胶。
附图说明
图1为交叉指状Y轴磁电阻传感器基本结构图；
图2为交叉指状Y轴磁电阻传感器Y磁场测量原理图；
图3为交叉指状Y轴磁电阻传感器Y磁场推、挽磁电阻传感器单元串敏感磁场分布图；
图4为交叉指状Y轴磁电阻传感器X磁场测量图；
图5为交叉指状Y轴磁电阻传感器X磁场推、挽磁电阻传感器单元串敏感磁场分布图；
图6 为N=2第一指齿数时交叉指状Y轴磁电阻传感器电连接图；
图7为 N=2第一指齿数时推挽式磁电阻传感单元半桥结构图；
图8为2N+1第一指齿数时交叉指状Y轴磁电阻传感器电连接图；
图9为推挽式磁电阻传感单元全桥结构图；
图10为2N+2第一指齿数时交叉指状Y轴磁电阻传感器电连接图；
图11为两端带直长条的Y轴磁电阻传感器电连接图；
图12 为结构一校准线圈的交叉指状Y轴磁电阻传感器电连接图；
图13为结构一校准线圈的校准电流所产生的校准直流磁力线的分布图；
图14为结构一校准线圈的磁电阻传感单元串处的校准磁场分量分布图；
图15为结构二校准线圈的交叉指状Y轴磁电阻传感器电连接图；
图16为结构二校准线圈的校准电流所产生的校准直流磁力线分布图；
图17为结构二校准线圈的磁电阻传感单元串处的校准磁场分量分布图；
图18为平面重置线圈的交叉指状Y轴磁电阻传感器电连接图；
图19为平面重置线圈的重置电流所产生的重置直流磁力线分布图；
图20为平面重置线圈在磁电阻传感单元串处的重置磁场分布图；
图21为三维重置线圈的交叉指状Y轴磁电阻传感器电连接图；
图22为三维重置线圈的重置电流所产生的重置直流磁力线分布图；
图23为三维重置线圈的磁电阻传感单元串处的重置磁场分量分布图；
图24为交叉指状软磁Y轴磁电阻传感器的基本结构截面图；
图25为带结构一校准线圈的交叉指状软磁Y轴磁电阻传感器的基本结构截面图；
图26为带结构二校准线圈的交叉指状软磁Y轴磁电阻传感器的基本结构截面图；
图27为带平面重置线圈的交叉指状软磁Y轴磁电阻传感器的基本结构截面图；
图28为带三维重置线圈的交叉指状软磁Y轴磁电阻传感器的基本结构截面图；
图29为带重置线圈和校准线圈的交叉指状软磁Y轴磁电阻传感器的基本结构截面图。
具体实施方式
下面将参考附图并结合实施例，来详细说明本发明。
实施例一
图1为一种交叉指状Y轴磁电阻传感器的基本结构图，包括衬底1，位于衬底1之上的第一梳状软磁通量引导器4，第二梳状软磁通量引导器7，以及推挽式磁电阻传感单元电桥14，所述第一梳状软磁通量引导器4包括N+1个第一梳齿2（1），2（2）…2(N+1)和1个第一梳座3,所述第一梳齿为长条形，其长轴平行于Y轴，短轴平行于X轴，第一梳齿尺寸相同且相互平行，并具有相同间距，N+1个第一梳齿的-Y端对齐且与第一梳座3相连，所述第一梳座3也为长条形，其长轴平行于X轴，短轴平行于Y轴；所述第二梳指软磁通量引导器7包括N个第二梳齿6（1），6（2）…6(N)以及1个第二梳座5，所述第二梳齿同样也为长条形，其长轴平行于Y轴，短轴平行于X轴，第二梳齿尺寸相同且相互平行，并具有相同间距，N个第二梳齿的+Y端对齐并与第二指座5相连，所述第二梳座5也为长条形,其长轴平行于X轴，短轴平行于Y轴。
所述第一梳状软磁通量引导器4和第二梳状通量引导器7之间形成交叉指状结构，其中，所述第二梳齿如6(1)和与之相邻的所述两个第一梳齿如2(1)和2（2）之间分别交替形成具有相同宽度gapy的第一间隙如8和第二间隙如9，且所述第二梳指如6（1）与所述第一梳座3之间，所述第一梳指如2（1）、2（2）与所述第二梳座5之间分别交替形成具有长度gapx1和gapx2的第三间隙10和第四间隙11。
所述推挽式磁电阻传感单元电桥14包括至少一个推臂和一个挽臂，所述推臂包括至少一个推磁电阻传感单元串12，所述挽臂包括至少一个挽磁电阻传感单元串13，所述磁电阻传感单元串包括多个串联和或者并联的磁电阻传感单元，所述推臂和挽臂具有相同数量的磁电阻传感单元串，所述推磁电阻传感单元串和挽磁电阻传感单元串均为平行于Y轴方向，且交替位于所述第一间隙8和第二间隙9内,且所述磁电阻传感单元具有X向磁场敏感方向,其中，15,16,17和18分别对应于推挽式磁电阻传感单元电桥14的地端，电源输入端，及两个半桥的信号输出端。
实施例二
图2为一种交叉指状Y轴磁电阻传感器对于Y磁场的测量原理图，可以看出，经过第一梳状软磁通量引导器4和第二梳状软磁通量引导器7之间形成的交叉指状结构，在第一间隙8和第二间隙9处交替形成具有-X和X向的磁场分量19和20，并分别作用于推磁电阻传感单元串12和挽磁电阻传感单元串13。其Hx磁场分布特征如图3所示，可以看出在第一间隙8和第二间隙9处的Hx磁场大小相同，方向相反。
图4为交叉指状Y轴磁电阻传感器对X磁场的测量原理图，可以看出，经过第一梳状软磁通量引导器4和第二梳状软磁通量引导器7之间形成的叉指状结构，在第一间隙8和第二间隙9处形成具有相同于X外磁场取向的磁场分量21和22，并分别作用于推磁电阻传感单元串12和挽磁电阻传感单元串13。
图5为Hx磁场在第一间隙和第二间隙处的分布情况，可以看出，Hx磁场分布具有相对于中心对称的特征，这对于推挽式磁电阻传感单元的推磁电阻传感单元串和挽磁电阻传感单元串在第一间隙和第二间隙处的分布提出了同样对称的要求，即对于任一推磁电阻传感单元串所在的第一间隙位置，必然对应一个挽磁电阻传感单元串，其所处的第二间隙相对于第一间隙位置具有相同的Hx磁场分量，这样才能保证对于X外磁场的抵消作用。
实施例三
图6为交叉指状Y轴磁电阻传感器当第一梳状软磁通量引导器的梳齿数量N=2时的结构图，其中所述推挽式磁电阻传感单元电桥包括位于第一间隙内的推磁电阻传感单元串23和位于第二间隙内的挽磁电阻传感单元串24，图7为N=2时推磁电阻传感单元串和挽磁电阻传感单元串所构成的推挽式半桥结构，包括R1和R2推臂和挽臂。
图8为交叉指状Y轴磁电阻传感器当第一叉指软磁通量引导器的梳齿数量为25（1），25（2）…25(2N+1)总共2N+1时的结构图，其中交替位于第一间隙内的推磁电阻传感单元串和位于第二间隙内的挽磁电阻传感单元串的数量为4N，此时推磁电阻传感单元串和挽磁电阻传感单元串交替的位于所有的第一间隙和第二间隙内，其电连接图如图8所示，构成的全桥推挽式结构如图9所示。
图10为交叉指状Y轴磁电阻传感器当第一梳状软磁通量引导器的梳齿数量为26（1），26（2）…26(2N+2)总共2N+2时的结构图，此时，为了使得交替位于第一间隙内的推磁电阻传感单元串和位于第二间隙内的挽磁电阻传感单元串的数量为4N，需要同时减少1个推磁电阻传感单元串和挽磁电阻传感单元串，而同时考虑到Hx磁场的对称性的要求，因此要求如果缺少任一一条推磁电阻传感单元串，则同时缺少一条挽磁电阻传感单元串，且所述推磁电阻传感单元串和挽磁电阻传感单元串相对于Y中心线对称。
以上仅仅给出了推磁电阻传感单元串和挽磁电阻传感单元串电连接成全桥的情况，实际情况下，还可以电连接成半桥、或者准桥结构。
实施例四
图11为交叉指状Y轴磁电阻传感器的另一种形式，除了第一梳状软磁通量引导器和第二梳状软磁通量引导器形成的交叉指状结构之外，还在X和-X两端引入了两个长条形软磁通量引导器27和28，所述长条形软磁通量引导器其Y向长度跨越交叉指状软磁通量引导器的-Y端到+Y端，并对齐，且距离-X和+X端相同的距离。
实施例五
图12为交叉指状Y轴磁电阻传感器的校准线圈29的结构图，包括平行于推磁电阻传感单元串和挽磁电阻传感单元串的校准直导线30和31，校准直导线30位于推磁电阻传感单元串的正上方或者正下方，校准直导线31位于挽磁电阻传感单元串的正上方或者正下方，并分别成为推校准直导线30和挽校准直导线31，两者具有相反的电流方向，并且串联连接。需要说明的是，推校准直导线30位于正上方（正下方）时，挽校准直导线31也位于正上方（正下方）。
图13为校准线圈29在交叉指状Y轴磁电阻传感器上所产生的磁场分布特征，可以看出，推校准直导线和挽校准直导线在第一间隙和第二间隙处产生反向的磁场分布。图14为推磁电阻传感单元串和挽磁电阻传感单元串处的X向磁场分布，可以看出，推磁电阻传感单元和挽磁电阻传感单元具有相反的磁场分布特征，大小相同，方向相反，符合推挽式磁电阻传感单元电桥的Y校准磁场作用的特征。
图15为另外一种类型的校准线圈32在交叉指状Y轴磁电阻传感器上的结构图，包括推校准直导线33和挽校准直导线34，所述推校准直导线33包括两条并联的校准推子直导线33（1）和33（2），且分别平行于所述推磁电阻传感单元串，并对称的位于所述推磁电阻传感单元串的两侧；所述挽校准直导线34包括两条并联的挽校准子直导线34（1）和34（2），且分别平行于所述挽磁电阻传感单元串，并对称的位于所述挽磁电阻传感单元串的两侧，且所述两条推校准子直导线和所述两条挽校准子直导线之间具有相同的距离。所述推校准直导线33和挽校准直导线34之间串联连接，且电流方向相反。
图16为对应图15的校准线圈32在交叉指状Y轴磁电阻传感器上的磁场分布图，可以看出，对应推校准直导线33和挽校准直导线34的两条并联的推校准子直导线和两条并联的挽校准子直导线之间分别形成一个闭合的磁力线圈，且在交界处形成反对称分布特征。其在推磁电阻传感单元串和挽磁电阻传感单元串处的Hx向磁场分布特征如图17所示，可以看出，所述推磁电阻传感单元串和所述挽磁电阻传感单元串处具有大小相同，方向相反的Hx磁场分布特征，符合推挽式磁电阻传感单元电桥的Y校准磁场作用的特征。
实施例六
图18为平面重置线圈35在交叉指状Y轴磁电阻传感器上的结构图，包括垂直于推磁电阻传感单元串和挽磁电阻传感单元串的平行重置直导线36，所述重置直导线位于所述推磁电阻传感单元的正上方或者正下方，且具有相同的电流方向，直导线37位于所述相邻两个磁电阻传感单元的间隙处，从而形成串联结构。
图19为平面重置线圈35在交叉指状Y轴磁电阻传感器上的磁场分布图，可以看出，相邻两个直导线36和37具有相反的磁场分布特征，并分别形成两个磁力线环，图20为位于推磁电阻传感单元串和挽磁电阻传感单元串处的Hx磁场分布特征，可以看出，在推磁电阻传感单元串和挽磁电阻传感单元串处具有相同的Hx磁场分量，在重置直导线具有相同的分布间距的情况下，即使推磁电阻传感单元串和挽磁电阻传感单元串不处于重置直导线的正上方或正下方，同样能够保证推磁电阻传感单元串和挽磁电阻传感单元串具有相同的Hx重置磁场分量。
图21为三维重置线圈38在交叉指状Y轴磁电阻传感器上的结构分布图，可以看出，三维重置线圈38包括垂直于推磁电阻传感单元串和挽磁电阻传感单元串的平行直导线39和40，并形成缠绕磁电阻传感单元串和软磁通量集中器为磁芯形成三维结构，其中直导线39位于软磁通量集中器下表面形成等距排列结构，直导线40位于软磁通量集中器上表面形成等距排列结构，直导线39位于软磁通量集中器下表面形成等距排列结构。
图22为三维重置直导线38在交叉指状Y轴磁电阻传感器上的磁场分布图，可以看出，上层重置直导线39和下层重置直导线40分布在推磁电阻传感单元串和挽磁电阻传感单元串处产生周期性分布的磁力线分布特征，相邻两直导线磁力线分布方向相反。
图23为三维重置直导线38在交叉指状Y轴磁电阻传感器的推磁电阻传感单元和挽磁电阻传感单元处所产生的Hx磁场分布曲线，可以看出，上层重置直导线39和下层重置直导线40在推磁电阻传感单元串和挽磁电阻传感单元处产生的Hx磁场分量具有周期性分布特点，只要上层直导线和下层直导线具有均匀的周期性间距，无论直导线是否处于推磁电阻传感单元或挽磁电阻传感单元正上方或者正下方，都能够保持均匀的磁场分布特征，从而能够获得均匀的重置磁场。
实施例七
图24为交叉指状Y轴磁电阻传感器的基本结构截面图，可以看出，推磁电阻传感单元串101和挽磁电阻传感单元串102位于所述衬底1之上，并位于第一梳状软磁通量集中器103和第二梳状软磁通量集中器104构成的第一间隙处，以及第二梳状软磁通量集中器104和第一梳状软磁通量集中器105构成的第二间隙处，其中106为推磁电阻传感单元101和挽磁电阻传感单元102多层薄膜和电极层之间的绝缘层，107为软磁通量集中器和磁电阻传感单元电极之间的绝缘层，108为交叉指状Y轴磁电阻传感器的保护层，109为所述交叉指状Y轴磁电阻传感器的输出输入电极。
图25为交叉指状Y轴磁电阻传感器的包含结构一校准线圈的基本结构截面图，其中，110为推校准直导线，111为挽校准直导线，所述推、挽校准直导线分别位于所述推磁电阻传感单元串101以及挽磁电阻传感单元串102的正上方或者正下方，在本图中位于推、挽磁电阻传感单元串的正上方，实际上还可以位于衬底之上，磁电阻传感单元之下，以及磁电阻传感单元和软磁通量集中器之间区域，还可以位于软磁通量集中器之上。
图26为交叉指状Y轴磁电阻传感器的包含结构二校准线圈的基本结构截面图，其中，112为推校准直导线，包含两条并联连接的推子直导线112（1）和112（2），两条推子同样113为挽校准直导线，包含两条并联连接的挽子直导线113（1）和113（2），两条推子直导线112（1）和112（2）对称的位于所述推磁电阻串101的两侧，两条挽子直导线113（1）和113（2）同样对称的位于所述挽磁电阻串102的两侧，且113（1）和113（2）与所述挽磁电阻传感单元串102之间的距离等于112（1）和112（2）与所述推磁电阻101之间的距离，所述结构二校准直导线在本结构中位于磁电阻传感单元之上，软磁通量引导器之下，实际上还可以位于衬底之上，磁电阻传感单元之下，以及软磁通量引导器之上，其中108（1）绝缘层用于保证磁电阻传感单元和软磁通量集中器之间的电绝缘。
图27为交叉指状Y轴磁电阻传感器的包含平面重置线圈的基本结构截面图，其中，重置线圈114包含垂直于推、挽磁电阻传感单元串101和102的直导线，其位于衬底之上，磁电阻传感单元之下，106（1）绝缘层为保证重置线圈114和磁电阻传感单元101和102之间的电绝缘，实际上，重置线圈114还可以位于磁电阻传感单元和软磁通量引导器之间，以及软磁通量引导器之上。
图28为交叉指状Y轴磁电阻传感器的包含三维重置线圈的截面图，其中，三维重置线圈115包含垂直于推挽磁电阻传感单元串101和102的直导线，并分别环绕所述磁电阻传感单元以及软磁通量引导器，108（1）和106（2）分别为三维重置线圈115和磁电阻传感单元串、软磁通量集中器之间的电绝缘的绝缘层。
图29为交叉指状Y轴磁电阻传感器的包含校准线圈和重置线圈的基本结构截面图，其中，校准线圈可以为图25和26中的任一种类型，其位置可以位于衬底之上，磁电阻传感单元之下，磁电阻传感单元和软磁通量引导器之间，软磁通量引导器之上、或者第一、第二间隙之间，重置线圈也可以为图27和28中的任一种类型，其中平面重置线圈可以位于衬底之上、磁电阻传感单元之下，磁电阻传感单元之上、软磁通量引导器之下，软磁通量引导器之上，三维重置线圈环绕磁电阻传感单元和软磁通量引导器，本图仅给出了包含类型一校准线圈，且位于第一间隙、第二间隙之间，重置线圈位于衬底之上，软磁通量引导器之间区域的一种情况。
此外，所述重置电流可以为脉冲电流或直流电流。
所述重置线圈和校准线圈为高导电率材料，如Cu,Au,Ag或Al。
所述软磁通量集中器为包含Fe,Ni或Co等元素中的一种或多种的合金软磁材料。
所述衬底材料为玻璃，硅片，且所述衬底上含有ASIC、或所述衬底与另外的ASIC芯片相连接。
所述重置/校准线圈和所述第一梳状软磁通量引导器、第二梳状软磁同量引导器、推挽式磁电阻传感单元电桥之间采用绝缘材料隔离，所述绝缘材料为SiO2,Al2O3,Si3N4,聚酰亚胺或光刻胶。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化，本发明中的实施也可以进行不同组合变化，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (26)

  1. 一种交叉指状Y轴磁电阻传感器，其特征在于，包括衬底、位于衬底之上的第一梳状软磁通量引导器、第二梳状软磁通量引导器及推挽式磁电阻传感单元电桥；
    所述第一梳状软磁通量引导器的第一梳齿和第一梳座和所述第二梳状软磁通量引导器的第二梳齿和第二梳座均为矩形，所述第一梳齿和所述第二梳齿长轴和短轴分别平行于Y轴和X轴，所述第一梳座和第二梳座长轴和短轴分别平行于X轴和Y轴；
    所述第一梳状软磁通量引导器和所述第二梳状软磁通量引导器之间形成交叉指状结构，相邻所述第一梳齿和所述第二梳齿之间依次交替形成第一间隙和第二间隙，且所述第二梳齿与所述第一梳座之间、所述第一梳齿与所述第二梳座之间也形成间隙；
    所述推挽式磁电阻传感单元电桥包括推、挽磁电阻传感单元串，所述推、挽磁电阻传感单元串均包括多个串联和/或并联的磁电阻传感单元，且平行于Y轴方向，并交替位于所述第一间隙和第二间隙内,所述推、挽磁电阻传感单元串分别电连接成推臂和挽臂，所述推臂和挽臂包含的所述磁电阻传感单元串数量相同，且所述推臂和挽臂电连接成推挽式磁电阻传感单元电桥，所述磁电阻传感单元具有X向磁场敏感方向。
  2. 根据权利要求1所述的一种交叉指状Y轴磁电阻传感器，其特征在于，还包括校准线圈和/或重置线圈，所述校准线圈包括平行于所述推、挽磁电阻传感单元串的校准直导线，当校准电流通过所述校准线圈时，在所述推、挽磁电阻传感单元串处分别产生沿X和-X方向幅度相同的校准磁场分量；所述重置线圈包括垂直于所述推、挽磁电阻传感单元串的重置直导线，当重置线圈通重置电流时，在所有磁电阻传感单元处沿Y方向或-Y方向产生幅度相同磁场分量。
  3. 根据权利要求1所述的一种交叉指状Y轴磁电阻传感器，其特征在于，所有所述第一梳齿尺寸相同，所有所述第二梳齿尺寸相同，所有所述第一间隙尺寸相同，所有所述第二间隙尺寸相同，所述第一间隙尺寸和所述第二间隙尺寸相同。
  4. 根据权利要求1或2所述的一种交叉指状Y轴磁电阻传感器，其特征在于，所述磁电阻传感单元为GMR自旋阀或者TMR传感单元，其中钉扎层方向平行于Y轴方向，自由层方向平行于X轴方向。
  5. 根据权利要求4所述的一种交叉指状Y轴磁电阻传感器，其特征在于，没有外加磁场时，所述磁电阻传感单元通过永磁偏置、双交换作用、形状各向异性或者任意结合来使磁性自由层的磁化方向与磁性钉扎层的磁化方向垂直。
  6. 根据权利要求1所述的一种交叉指状Y轴磁电阻传感器，其特征在于，所述推挽式磁电阻传感单元电桥为半桥、全桥或者准桥。
  7. 根据权利要求1所述的一种交叉指状Y轴磁电阻传感器，其特征在于，所述第一梳齿数量为2*N+1时，N为大于1的整数，所述推磁电阻传感单元串和所述挽磁电阻传感单元串交替分布在2*N个所述第一间隙和所述第二间隙内。
  8. 根据权利要求1所述的一种交叉指状Y轴磁电阻传感器，其特征在于，所述第一梳齿数量为2*N+2时，N为大于1的整数，所述推磁电阻传感单元串和所述挽磁电阻传感单元串交替分布在除位于正中间的所述第一间隙和所述第二间隙之外的其他2*N个所述第一间隙和所述第二间隙内。
  9. 根据权利要求1所述的一种交叉指状Y轴磁电阻传感器，其特征在于，所述第一梳齿数量为2时，所述推磁电阻传感单元串和所述挽磁电阻传感单元串交替的分布在所述第一间隙和所述第二间隙内。
  10. 根据权利要求7-9中任一项所述的一种交叉指状Y轴磁电阻传感器，其特征在于，任一个所述推磁电阻传感单元串均有一个与之相对于所述第一梳状软磁通量集中器的X轴中心线对称的所述挽磁电阻传感单元串。
  11. 根据权利要求1或3所述的一种交叉指状Y轴磁电阻传感器，其特征在于，随着所述第一梳齿宽度Lx10和所述第二梳齿宽度Lx20之和相对于所述第一间隙、所述第二间隙宽度gapy的比率（Lx10+Lx20）/gapy增加，所述推挽式磁电阻传感单元电桥增益增加。
  12. 根据权利要求1所述一种交叉指状Y轴磁电阻传感器，其特征在于，所述第一梳座和第二梳座的X端和-X端均对齐。
  13. 根据权利要求12所述一种交叉指状Y轴磁电阻传感器，其特征在于，所述的Y轴磁电阻传感器还包括两条相同的软磁通量集中器长条，两条所述软磁通量集中器长条分别位于所述第一梳状软磁通量集中器和第二梳状软磁通量集中器的X端及-X端，且距离两端相同距离。
  14. 根据权利要求2所述一种交叉指状Y轴磁电阻传感器，其特征在于，所述校准线圈包括推校准直导线和挽校准直导线，所述推校准直导线和对应推磁电阻传感单元串之间的位置关系与挽校准直导线和对应挽磁电阻传感单元串之间的位置关系相同，所述位置关系为所述校准直导线位于对应的磁电阻传感单元串的正上方或正下方，且所述推校准直导线和所述挽校准直导线之间串联连接，并具有相反的电流方向。
  15. 根据权利要求2所述一种交叉指状Y轴磁电阻传感器，其特征在于，所述校准线圈包括推校准直导线和挽校准直导线，所述推校准直导线、挽校准直导线均包括并联连接的两条平行的校准直导线，且两条所述推校准直导线和两条所述挽校准直导线之间的间距相同，且分别对称分布于所述推、挽磁电阻传感单元串的两侧，且所述推校准直导线和所述挽校准直导线之间串联连接，并具有相反的电流方向。
  16. 根据权利要求2所述一种交叉指状Y轴磁电阻传感器，其特征在于，所述重置线圈为平面线圈，包含的重置直导线垂直于推磁电阻传感单元串和挽磁电阻传感单元串，且位于每个磁电阻传感单元的正上方或者正下方，且电流方向一致。
  17. 根据权利要求2所述一种交叉指状Y轴磁电阻传感器，其特征在于，所述重置线圈为三维线圈，所述三维线圈缠绕所述第一梳状软磁通量引导器、第二梳状软磁通量引导器以及所述磁电阻传感单元，所述重置直导线分别位于所述软磁通量引导器和磁电阻传感单元表面，所述重置直导线在所述表面上具有相同排列间隔。
  18. 根据权利要求14或15所述一种交叉指状Y轴磁电阻传感器，其特征在于，所述校准线圈包含一个正的端口和一个负的端口，两端通过电流时，其所产生的校准磁场幅度范围在所述磁电阻传感单元的线性工作区域内。
  19. 根据权利要求18所述一种交叉指状Y轴磁电阻传感器，其特征在于，所述校准电流可以设定为一个电流值或多个电流值。
  20. 根据权利要求16或17所述一种交叉指状Y轴磁电阻传感器，其特征在于，所述重置线圈包含两个端口，当两端口通过电流时，其所产生的重置磁场大小为高于所述磁电阻传感单元的饱和磁场值。
  21. 根据权利要求20所述一种交叉指状Y轴磁电阻传感器，其特征在于，所述重置电流为脉冲电流或直流电流。
  22. 根据权利要求2、14-17任一项所述一种交叉指状Y轴磁电阻传感器，其特征在于，所述重置线圈和校准线圈为高导电率材料，所述高导电率材料为Cu,Au,Ag或Al。
  23. 根据权利要求1所述的一种交叉指状Y轴磁电阻传感器，其特征在于，所述软磁通量集中器为包含Fe,Ni,Co元素中的一种或多种的合金软磁材料。
  24. 根据权利要求1所述的一种交叉指状Y轴磁电阻传感器，其特征在于，所述衬底材料为玻璃或硅片，且所述衬底上含有ASIC或所述衬底与另外的ASIC芯片相连接。
  25. 根据权利要求2、14-17任一项所述一种交叉指状Y轴磁电阻传感器，其特征在于，所述重置和/或校准线圈位于所述衬底之上、磁电阻传感单元之下，或者所述磁电阻传感单元和所述软磁通量引导器之间、或者所述软磁通量引导器之上。
  26. 根据权利要求2、14-17任一项所述一种交叉指状Y轴磁电阻传感器，其特征在于，所述重置和/或校准线圈和所述第一梳状软磁通量引导器、第二梳状软磁同量引导器、推挽式磁电阻传感单元电桥之间采用绝缘材料隔离，所述绝缘材料为SiO2,Al2O3,Si3N4,聚酰亚胺或光刻胶。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10393828B2 (en) 2015-06-09 2019-08-27 MultiDimension Technology Co., Ltd. Interdigitated y-axis magnetoresistive sensor
JP2020516873A (ja) * 2017-04-05 2020-06-11 江▲蘇▼多▲維▼科技有限公司Ｍｕｌｔｉｄｉｍｅｎｓｉｏｎ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． 被変調磁気抵抗センサ

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105259518A (zh) * 2015-11-03 2016-01-20 江苏多维科技有限公司 一种高灵敏度单芯片推挽式tmr磁场传感器
CN106972089B (zh) * 2017-04-14 2023-09-22 华南理工大学 一种稻草人形n电极及垂直结构led芯片
CN107329099B (zh) * 2017-06-22 2019-08-20 东南大学 一种扭摆平移式微机电磁场传感器
CN107356889B (zh) * 2017-06-22 2019-08-20 东南大学 一种扭摆式叉指微机电磁场传感器
CN108413992A (zh) * 2018-01-30 2018-08-17 江苏多维科技有限公司 一种三轴预调制低噪声磁电阻传感器
CN108363025B (zh) * 2018-05-14 2023-10-13 美新半导体（无锡）有限公司 磁场传感器
JP7024810B2 (ja) 2019-12-11 2022-02-24 Tdk株式会社 磁場検出装置および電流検出装置
DE102020130296B4 (de) * 2019-12-11 2025-06-05 Tdk Corporation Magnetfeld-detektionsvorrichtung und stromerfassungsgerät
US11372029B2 (en) 2019-12-11 2022-06-28 Tdk Corporation Magnetic field detection apparatus and current detection apparatus
CN113030804B (zh) * 2021-03-01 2022-12-23 歌尔微电子股份有限公司 传感器和电子设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000321014A (ja) * 1999-03-11 2000-11-24 Tokai Rika Co Ltd 回転検出センサ
CN103901363A (zh) * 2013-09-10 2014-07-02 江苏多维科技有限公司 一种单芯片z轴线性磁阻传感器
CN104280700A (zh) * 2014-09-28 2015-01-14 江苏多维科技有限公司 一种单芯片差分自由层推挽式磁场传感器电桥及制备方法
WO2015107949A1 (ja) * 2014-01-15 2015-07-23 株式会社村田製作所 磁気センサ
CN104880682A (zh) * 2015-06-09 2015-09-02 江苏多维科技有限公司 一种交叉指状y轴磁电阻传感器
CN204740335U (zh) * 2015-06-09 2015-11-04 江苏多维科技有限公司 一种交叉指状y轴磁电阻传感器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2709549B1 (fr) * 1993-09-02 1995-10-13 Commissariat Energie Atomique Guide de flux magnétique à languettes et capteur magnétorésistif comportant ce guide .
FR2709600B1 (fr) * 1993-09-02 1995-09-29 Commissariat Energie Atomique Composant et capteur magnétorésistifs à motif géométrique répété.
CN102298126B (zh) * 2011-01-17 2013-03-13 江苏多维科技有限公司 独立封装的桥式磁场传感器
US9470764B2 (en) * 2011-12-05 2016-10-18 Hercules Technology Growth Capital, Inc. Magnetic field sensing apparatus and methods
JP6199548B2 (ja) * 2012-02-07 2017-09-20 旭化成エレクトロニクス株式会社 磁気センサ及びその磁気検出方法
JP6126348B2 (ja) * 2012-09-27 2017-05-10 旭化成エレクトロニクス株式会社 磁気センサ及びその磁気検出方法
JP6226447B2 (ja) * 2012-10-18 2017-11-08 旭化成エレクトロニクス株式会社 磁気センサ及びその磁気検出方法
US9341684B2 (en) * 2013-03-13 2016-05-17 Plures Technologies, Inc. Magnetic field sensing apparatus and methods
CN103412269B (zh) * 2013-07-30 2016-01-20 江苏多维科技有限公司 单芯片推挽桥式磁场传感器
CN103954920B (zh) * 2014-04-17 2016-09-14 江苏多维科技有限公司 一种单芯片三轴线性磁传感器及其制备方法
CN204347226U (zh) * 2015-01-07 2015-05-20 江苏多维科技有限公司 一种单芯片具有校准/重置线圈的z轴线性磁电阻传感器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000321014A (ja) * 1999-03-11 2000-11-24 Tokai Rika Co Ltd 回転検出センサ
CN103901363A (zh) * 2013-09-10 2014-07-02 江苏多维科技有限公司 一种单芯片z轴线性磁阻传感器
WO2015107949A1 (ja) * 2014-01-15 2015-07-23 株式会社村田製作所 磁気センサ
CN104280700A (zh) * 2014-09-28 2015-01-14 江苏多维科技有限公司 一种单芯片差分自由层推挽式磁场传感器电桥及制备方法
CN104880682A (zh) * 2015-06-09 2015-09-02 江苏多维科技有限公司 一种交叉指状y轴磁电阻传感器
CN204740335U (zh) * 2015-06-09 2015-11-04 江苏多维科技有限公司 一种交叉指状y轴磁电阻传感器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3309572A4 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10393828B2 (en) 2015-06-09 2019-08-27 MultiDimension Technology Co., Ltd. Interdigitated y-axis magnetoresistive sensor
JP2020516873A (ja) * 2017-04-05 2020-06-11 江▲蘇▼多▲維▼科技有限公司Ｍｕｌｔｉｄｉｍｅｎｓｉｏｎ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． 被変調磁気抵抗センサ
JP7105497B2 (ja) 2017-04-05 2022-07-25 江▲蘇▼多▲維▼科技有限公司 被変調磁気抵抗センサ

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