WO2016157321A1 - Light emitting device - Google Patents

Abstract

A substrate (100) is formed using a resin. A first inorganic layer (200) is formed on a first surface (102) of the substrate (100), and a plurality of light emitting units (140) are lighting units or display units, and are formed on the first inorganic layer (200). Furthermore, each of the light emitting units (140) has an organic layer. The first surface (102) has a first region (202) where the first inorganic layer (200) is not formed. The first region (202) is positioned at least on a part of a region positioned among the light emitting units (140).

Description

Light emitting device

The present invention relates to a light emitting device.

In recent years, development of light-emitting devices using organic EL elements as light sources has been progressing. The organic EL element has a configuration in which a first electrode that is a transparent electrode, an organic layer, and a second electrode are laminated in this order. When the organic EL element is used as a light source, the light emitting device can be formed into a panel shape. And if a panel-shaped light-emitting device is attached to a wall or a ceiling without a gap, the entire wall or ceiling can be seen to emit light. On the other hand, the light-emitting device has a region where a light-emitting element is not formed, that is, a non-light-emitting portion, at the edge of the substrate. In the above-described application, it is preferable that this non-light emitting portion does not appear on the surface.

On the other hand, Patent Document 1 describes that the non-light-emitting portion is made invisible by bending the edge of the substrate. In particular, Patent Document 1 describes that in a display panel having a glass substrate on which an organic EL element is formed, the thickness of the glass substrate is 50 μm or less in order to bend the edge of the display panel.

JP 2011-47977 A

In recent years, it has been studied to make a light emitting device flexible by forming a substrate of an organic EL element with a resin. On the other hand, since the resin transmits moisture, when the substrate is formed of resin, it is necessary to form an inorganic film on the substrate in order to prevent moisture from passing through the substrate. When such a substrate is bent, a crack occurs in the inorganic film starting from the bent portion, and there is a possibility that the crack extends to a region overlapping with the organic EL element. In this case, there is a possibility that moisture reaches the organic EL element through a crack in the inorganic film, so that the reliability of the light emitting device is lowered.

An example of a problem to be solved by the present invention is to prevent the inorganic film from cracking when the substrate of the light-emitting device is formed of resin and an inorganic film is formed on the substrate.

The invention according to claim 1 is a substrate formed using a resin;
A first inorganic layer formed on the first surface of the substrate;
A plurality of light emitting portions formed on the first inorganic layer and having an organic layer;
With
The first surface has a first region which is a region where the first inorganic layer is not formed, and the first region is at least part of a region located between the plurality of light emitting units. The light emitting device is located.

The above-described object and other objects, features, and advantages will be further clarified by a preferred embodiment described below and the following drawings attached thereto.

It is sectional drawing which shows the structure of the light-emitting device which concerns on embodiment. It is a top view of a light-emitting device. It is a figure explaining the method of using a light-emitting device. 6 is a plan view of a light emitting device according to Modification Example 1. FIG. It is a figure explaining the method of using the light-emitting device which concerns on the modification 1. FIG. It is sectional drawing of the light-emitting device which concerns on the modification 2. FIG. 11 is a cross-sectional view illustrating a configuration of a light emitting device according to Modification 3. It is a figure explaining the modification of the method of using a light-emitting device. 4 is a plan view illustrating a configuration of a light emitting unit of the light emitting device according to Example 1. FIG. It is the figure which removed the 2nd electrode from FIG. It is the figure which removed the organic layer and the insulating layer from FIG. FIG. 10 is a sectional view taken along line BB in FIG. 9. 6 is a plan view of a light emitting unit included in a light emitting device according to Example 2. FIG. It is the figure which removed the partition, the 2nd electrode, the organic layer, and the insulating layer from FIG. It is CC sectional drawing of FIG. It is DD sectional drawing of FIG. It is EE sectional drawing of FIG. It is sectional drawing which shows the modification of FIG. It is sectional drawing which shows the modification of FIG. It is sectional drawing which shows the modification of FIG.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

FIG. 1 is a cross-sectional view illustrating a configuration of a light emitting device 10 according to the embodiment, and FIG. 2 is a plan view of the light emitting device 10. 1 corresponds to the AA cross section of FIG. The light emitting device 10 according to this embodiment includes a substrate 100, a first inorganic layer 200, and a plurality of light emitting units 140. The substrate 100 is formed using a resin. The first inorganic layer 200 is formed on the first surface 102 of the substrate 100, and the plurality of light emitting units 140 are all illumination units or display units, and are formed on the first inorganic layer 200. In addition, the light emitting unit 140 has an organic layer. The first surface 102 has a region where the first inorganic layer 200 is not formed (hereinafter referred to as a first region 202). The first region 202 is located in at least a part of a region located between the plurality of light emitting units 140. Details will be described below.

When the light emitting device 10 is a bottom emission type light emitting device, the substrate 100 is a resin substrate having translucency. On the other hand, in the case where the light emitting device 10 is a top emission type light emitting device, the substrate 100 may not have translucency. The substrate 100 is formed using, for example, PEN (polyethylene naphthalate), PES (polyethersulfone), PET (polyethylene terephthalate), or polyimide. Further, the substrate 100 has flexibility. For this reason, the light emitting device 10 can be used in a state where a part of the substrate 100 is curved. The thickness of the substrate 100 is, for example, 10 μm or more and 1000 μm or less. The substrate 100 is, for example, a polygon such as a rectangle.

The first inorganic layer 200 is provided on the first surface 102 of the substrate 100 in order to prevent moisture from passing through the substrate 100. The first inorganic layer 200 is formed using an inorganic material. This inorganic material contains, for example, at least one of silicon oxide, silicon oxynitride, carbon-added silicon oxide, silicon nitride, aluminum oxide, and titanium oxide. For example, the first inorganic layer 200 includes at least one of a silicon oxide film, a silicon oxynitride film, a carbon-added silicon oxide film, a silicon nitride film, an aluminum oxide film, and a titanium oxide film. Note that a planarization layer (for example, an organic layer) may be provided between the first inorganic layer 200 and the substrate 100.

As described above, the light emitting unit 140 is provided on the first surface 102 of the substrate 100. The light emitting unit 140 has a configuration in which a first electrode, an organic layer, and a second electrode are stacked in this order.

The first electrode is a transparent electrode having optical transparency. The material of the transparent electrode is a metal-containing material, for example, a metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IWZO (Indium Tungsten Zinc Oxide), or ZnO (Zinc Oxide). The thickness of the first electrode is, for example, not less than 10 nm and not more than 500 nm. The first electrode is formed using, for example, a sputtering method or a vapor deposition method. The first electrode may be a carbon nanotube or a conductive organic material such as PEDOT / PSS.

The organic layer has a light emitting layer. The organic layer has, for example, a configuration in which a hole injection layer, a light emitting layer, and an electron injection layer are stacked in this order. A hole transport layer may be formed between the hole injection layer and the light emitting layer. In addition, an electron transport layer may be formed between the light emitting layer and the electron injection layer. The organic layer may be formed by a vapor deposition method. In addition, at least one of the organic layers, for example, a layer in contact with the first electrode may be formed by a coating method such as an inkjet method, a printing method, or a spray method. In this case, the remaining layers of the organic layer are formed by vapor deposition. Further, all layers of the organic layer may be formed using a coating method.

The second electrode is made of, for example, a metal selected from the first group consisting of Al, Au, Ag, Pt, Mg, Sn, Zn, and In, or an alloy of a metal selected from the first group. Contains a metal layer. In this case, the second electrode has a light shielding property. The thickness of the second electrode is, for example, not less than 10 nm and not more than 500 nm. However, the second electrode may be formed using the material exemplified as the material of the first electrode. The second electrode is formed using, for example, a sputtering method or a vapor deposition method.

In addition, the material of the first electrode and the second electrode described above is a case where the light emitting device 10 is a bottom emission type. When the light emitting device 10 is a top emission type, the material of the first electrode and the material of the second electrode are reversed. That is, the above-described second electrode material is used as the first electrode material, and the above-described first electrode material is used as the second electrode material.

Further, the light emitting unit 140 is sealed by a sealing member (not shown). The sealing member is formed using, for example, a metal such as aluminum, or a resin, and has a polygonal shape or a circular shape similar to that of the substrate 100 and has a shape in which a concave portion is provided at the center. The edge of the sealing member is fixed to the substrate 100 with an adhesive. Thereby, the space surrounded by the sealing member and the substrate 100 is sealed. And the light emission part 140 is located in this sealed space. The sealing member may further include a film formed by an atomic layer deposition (ALD) method or a film formed by a chemical vapor deposition (CVD) method, or only this film. Also good.

The first surface 102 of the substrate 100 has a region (first region 202) where the first inorganic layer 200 is not provided. The first region 202 is provided in a part of the non-light emitting region of the light emitting device 10, specifically, at least a part of the region located between the plurality of light emitting units 140. As will be described later, when the light emitting device 10 is installed on a surface such as a wall or a ceiling, the edge of the substrate 100 is bent. The first region 202 is located in a region where the substrate 100 is bent. The first region 202 can also be defined as an opening provided in the first inorganic layer 200.

In the example shown in the figure, the light emitting units 140 are arranged side by side in the first direction (left-right direction in FIG. 2). The first region 202 is opposed to one side from one side of the substrate 100 in a second direction (for example, a direction orthogonal to the first direction) intersecting the first direction in the region between the adjacent light emitting units 140. It extends to the side. In other words, the first inorganic layer 200 is divided between the adjacent light emitting units 140. However, the first inorganic layer 200 may not be divided between the adjacent light emitting units 140. Note that the width w of the first region 202 is, for example, 50 μm or more.

Next, a method for manufacturing the light emitting device 10 will be described. First, the substrate 100 is formed, for example, by applying a resin on the support substrate. Next, the first inorganic layer 200 is formed on the first surface 102 of the substrate 100 by using a vapor deposition method such as a CVD method. Thereafter, a resist pattern is formed on the first inorganic layer 200, and the first inorganic layer 200 is etched using the resist pattern as a mask. As a result, the first region 202 is formed on the first surface 102. The first region 202 may be formed by using a mask when the first inorganic layer 200 is formed.

Next, a first electrode, an organic layer, and a second electrode are formed in this order on the first inorganic layer 200. Thereby, a plurality of light emitting portions 140 are formed. Thereafter, the plurality of light emitting units 140 are sealed using a sealing member.

FIG. 3 is a diagram for explaining a method of using the light emitting device 10. The light-emitting device 10 is, for example, a wristwatch-type device, and is used in a state of being bent into a ring shape along a first direction (left-right direction in FIG. 2). In the example shown in this drawing, since the light emitting device 10 is a top emission type, the non-light emitting region is bent in a direction in which the first surface 102 is convex. At this time, the region where the light emitting unit 140 is located in the light emitting device 10 is slightly curved or not curved. On the other hand, the first region 202 of the light emitting device 10 is curved to be larger than the region where the light emitting unit 140 is located. Since the first inorganic layer 200 is not formed in the first region 202, even if the light emitting device 10 is largely curved in the first region 202, the possibility that a crack is generated in the first inorganic layer 200 is low or almost. Absent. For this reason, the possibility that moisture passes through the substrate 100 and reaches the light emitting unit 140 does not increase. Therefore, the reliability of the light emitting device 10 is unlikely to decrease.

(Modification 1)
FIG. 4 is a plan view of the light emitting device 10 according to the first modification, and corresponds to FIG. 2 in the embodiment. The light emitting device 10 according to this modification includes the light emitting units 140 located at both ends in the first direction (left and right direction in FIG. 4) and the edge of the substrate 100 facing the light emitting unit 140 in the first direction ( Specifically, the light emitting device 10 according to the embodiment, except that the first region 202 is also formed between the substrate 100 and the second direction (side extending in the vertical direction in the drawing). It is the same composition as.

FIG. 5 is a diagram for explaining a method of using the light emitting device 10 according to this modification. Also in this modification, the light emitting device 10 is used in a state of being curved in a ring shape. Further, in this modification, first regions 202 are provided at both ends of the substrate 100 in the first direction. For this reason, in this modification, both ends of the substrate 100 can be curved and overlap each other.

(Modification 2)
FIG. 6 is a cross-sectional view of a light emitting device 10 according to Modification Example 2, and corresponds to FIG. 1 in the embodiment. The light emitting device 10 according to this modification has the same configuration as that of the light emitting device 10 according to the embodiment, except that the second surface 104 of the substrate 100 includes the second inorganic layer 210.

The material of the second inorganic layer 210 is the same as the material of the first inorganic layer 200 in the embodiment. However, the second inorganic layer 210 may be formed of the same material as the first inorganic layer 200, or may be formed using a material different from that of the first inorganic layer 200. The second inorganic layer 210 is also provided to prevent moisture from permeating the substrate 100.

Also according to this modification, since the first region 202 is provided on the first surface 102 of the substrate 100, the first inorganic layer can be formed even if the light emitting device 10 is curved in the first region 202 as in the embodiment. 200 does not crack. For this reason, the possibility that moisture passes through the substrate 100 and reaches the light emitting unit 140 does not increase. Therefore, the reliability of the light emitting device 10 does not decrease. In addition, since the second inorganic layer 210 is provided on the second surface 104 of the substrate 100, the organic layer of the light emitting unit 140 can be further suppressed from being deteriorated by moisture.

(Modification 3)
FIG. 7 is a cross-sectional view illustrating a configuration of a light emitting device 10 according to Modification 3, and corresponds to FIG. 1 in the embodiment. The light emitting device 10 according to this modification has the same configuration as that of the light emitting device 10 according to modification 2 except that the second surface 104 has a second region 212.

The second region 212 is a region of the second surface 104 where the second inorganic layer 210 is not formed, and the first region 202 when viewed from a direction perpendicular to the second surface 104 (y direction in the drawing). It overlaps with. That is, the second region 212 is provided in at least a part of the second surface 104 that overlaps with a part of the non-light emitting region of the light emitting device 10, specifically, a region located between the plurality of light emitting units 140. It has been. The second region 212 is located in a curved region of the substrate 100. It can also be said that the second inorganic layer 210 is divided by the second region 212. Further, in the width direction of the second region 212 (that is, the x direction in FIG. 7), the second region 212 may completely overlap the first region 202 or may partially overlap.

According to this modification, as in Modification 2, even if the substrate 100 is curved in the first region 202, no cracks are generated in the first inorganic layer 200. For this reason, the possibility that moisture passes through the substrate 100 and reaches the light emitting unit 140 does not increase. In addition, since the second inorganic layer 210 is provided on the second surface 104 of the substrate 100, the organic layer of the light emitting unit 140 can be further suppressed from being deteriorated by moisture. Furthermore, according to this modification, since the second inorganic layer 210 has the second region 212, even if the substrate 100 is curved in the first region 202 (that is, the second region 212), the second inorganic layer 210. Cracks do not occur.

In the above-described embodiments and modifications, when the light emitting device 10 is a bottom emission type light emitting device, the substrate 100 is curved in a direction in which the second surface 104 side is convex as shown in FIG.

Also, at least one layer may be formed between the first inorganic layer 200 and the first surface 102 of the substrate 100. Even in this case, the first inorganic layer 200 is not formed in the first region 202. However, the at least one layer described above may be left in the first region 202 or may be removed.

For example, in the example shown in FIGS. 18 and 19, the inorganic layer 206, the organic layer 205, and the first inorganic layer 200 are formed on the substrate 100 in this order. The inorganic layer 206 and the first inorganic layer 200 are both formed as barrier layers, and the organic layer 205 is provided as a planarization layer. The material of the inorganic layer 206 is the same as that of the first inorganic layer 200. However, the materials of the first inorganic layer 200 and the inorganic layer 206 may be different from each other.

In the example shown in FIG. 18, the first inorganic layer 200 is removed in the first region 202, but the organic layer 205 and the inorganic layer 206 are left. On the other hand, in the example shown in FIG. 19, the organic layer 205 and the inorganic layer 206 are also removed in the first region 202.

(Example 1)
FIG. 9 is a plan view illustrating the configuration of the light emitting unit 140 of the light emitting device 10 according to the first embodiment. FIG. 10 is a diagram in which the second electrode 130 is removed from FIG. 9. FIG. 11 is a diagram in which the organic layer 120 and the insulating layer 150 are removed from FIG. 12 is a cross-sectional view taken along the line BB of FIG.

In this embodiment, the light emitting device 10 is a lighting device, and includes a substrate 100, a light emitting unit 140, a first inorganic layer 200, and a second inorganic layer 210. The light emitting unit 140 includes a first electrode 110, an organic layer 120, and a second electrode 130. The configurations of the first electrode 110, the organic layer 120, and the second electrode 130 are the same as in the embodiment.

In this example, the light emitting device 10 has both the first inorganic layer 200 and the second inorganic layer 210. A first region 202 is provided on the first surface 102 of the substrate 100, and a second region 212 is provided on the second surface 104 of the substrate 100.

The edge of the first electrode 110 is covered with an insulating layer 150. The insulating layer 150 is made of, for example, a photosensitive resin material such as polyimide, and surrounds a portion of the first electrode 110 that becomes a light emitting region of the light emitting unit 140. By providing the insulating layer 150, it is possible to suppress a short circuit between the first electrode 110 and the second electrode 130 at the edge of the first electrode 110. The insulating layer 150 is formed by applying a resin material to be the insulating layer 150 and then exposing and developing the resin material. This step is performed, for example, after forming the first electrode 110 and before forming the organic layer 120.

Further, the light emitting device 10 has a first terminal 112 and a second terminal 132. The first terminal 112 is connected to the first electrode 110, and the second terminal 132 is connected to the second electrode 130. For example, the first terminal 112 and the second terminal 132 include a layer formed of the same material as that of the first electrode 110. A lead wiring may be provided between the first terminal 112 and the first electrode 110. In addition, a lead wiring may be provided between the second terminal 132 and the second electrode 130.

Next, a method for manufacturing the light emitting device 10 in this embodiment will be described. First, the substrate 100, the first inorganic layer 200, and the second inorganic layer 210 are formed. These forming methods are the same as those in the embodiment. Next, the first electrode 110, the first terminal 112, and the second terminal 132 are formed on the substrate 100. At this time, lead wires are also formed as necessary. Next, as in the embodiment, the organic layer 120 and the second electrode 130 are formed.

Also in the present example, as in the embodiment and the modification, even if the substrate 100 is curved with the first region 202 as a starting point, the first inorganic layer 200 does not crack. Therefore, the reliability of the light emitting device 10 does not decrease.

In the example shown in FIGS. 9 to 12, the first terminal 112 and the second terminal 132 are directed in a different direction from the first region 202. However, the first terminal 112 and the second terminal 132 may face a region overlapping with the first region 202. In this case, as shown in FIG. 20, the first region 202 may be located closer to the light emitting unit 140 than the first terminal 112 and the second terminal 132. The position of the second area 212 is the same as the position of the first area 202.

(Example 2)

FIG. 13 is a plan view of the light emitting unit 140 included in the light emitting device 10 according to the second embodiment. 14 is a view in which the partition 170, the second electrode 130, the organic layer 120, and the insulating layer 150 are removed from FIG. 15 is a sectional view taken along the line CC in FIG. 13, FIG. 16 is a sectional view taken along the line DD in FIG. 13, and FIG. 17 is a sectional view taken along the line EE in FIG.

The light emitting unit 140 according to the present embodiment is a display device, and includes a substrate 100, a first electrode 110, a light emitting unit 140, an insulating layer 150, a plurality of openings 152, a plurality of openings 154, a plurality of lead wires 114, an organic layer 120, A second electrode 130, a plurality of lead wires 134, and a plurality of partition walls 170 are provided. The light emitting unit 140 has a plurality of light emitting elements to be pixels.

The first electrode 110 extends in a line shape in the first direction (Y direction in FIG. 13). The end portion of the first electrode 110 is connected to the lead wiring 114.

The lead wiring 114 is a wiring that connects the first electrode 110 to the first terminal 112. In the example shown in the drawing, one end side of the lead wiring 114 is connected to the first electrode 110, and the other end side of the lead wiring 114 is the first terminal 112. In the example shown in the figure, the first electrode 110 and the lead-out wiring 114 are integrated. A conductor layer 180 is formed on the lead wiring 114. The conductor layer 180 is a single layer or a multilayer metal layer. The conductor layer 180 has a configuration in which, for example, a Mo alloy layer, an Al alloy layer, and a Mo alloy layer are stacked in this order. A part of the lead wiring 114 is covered with an insulating layer 150.

As shown in FIGS. 13 and 15 to 17, the insulating layer 150 is formed on the plurality of first electrodes 110 and in a region therebetween. A plurality of openings 152 and a plurality of openings 154 are formed in the insulating layer 150. The plurality of second electrodes 130 extend in parallel to each other in a direction intersecting the first electrode 110 (for example, a direction orthogonal to the X direction in FIG. 13). A partition wall 170, which will be described in detail later, extends between the plurality of second electrodes 130. The opening 152 is located at the intersection of the first electrode 110 and the second electrode 130 in plan view. Specifically, the plurality of openings 152 are arranged in the direction in which the first electrode 110 extends (Y direction in FIG. 13). The plurality of openings 152 are also arranged in the extending direction of the second electrode 130 (X direction in FIG. 13). For this reason, the plurality of openings 152 are arranged to form a matrix.

The opening 154 is located in a region overlapping with one end side of each of the plurality of second electrodes 130 in plan view. The openings 154 are arranged along one side of the matrix formed by the openings 152. And when it sees in the direction (For example, the Y direction in FIG. 13, ie, the direction in alignment with the 1st electrode 110) along this one side, the opening 154 is arrange | positioned by the predetermined space | interval. A part of the lead wiring 134 is exposed from the opening 154. The lead wiring 134 is connected to the second electrode 130 through the opening 154.

The lead wiring 134 is a wiring that connects the second electrode 130 to the second terminal 132, and has a layer made of the same material as the first electrode 110. One end side of the lead wiring 134 is located below the opening 154, and the other end side of the lead wiring 134 is led out of the insulating layer 150. In the example shown in the figure, the other end side of the lead-out wiring 134 is the second terminal 132. A conductor layer 180 is formed on the lead wiring 134. A part of the lead wiring 134 is covered with an insulating layer 150.

In the region overlapping with the opening 152, the organic layer 120 is formed. The hole injection layer of the organic layer 120 is in contact with the first electrode 110, and the electron injection layer of the organic layer 120 is in contact with the second electrode 130. Therefore, the light emitting unit 140 has a light emitting element in each of the regions overlapping with the opening 152.

In the example shown in FIGS. 15 and 16, the layers constituting the organic layer 120 are shown to protrude beyond the opening 152. And as shown in FIG. 16, the organic layer 120 may be continuously formed between the adjacent openings 152 in the direction in which the partition 170 extends, or may not be formed continuously. Good. However, as shown in FIG. 17, the organic layer 120 is not formed in the opening 154.

As shown in FIGS. 13 and 15 to 17, the second electrode 130 extends in a second direction (X direction in FIG. 13) intersecting the first direction. A partition wall 170 is formed between the adjacent second electrodes 130. The partition wall 170 extends in parallel to the second electrode 130, that is, in the second direction. The base of the partition 170 is, for example, the insulating layer 150. The partition 170 is, for example, a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed. The partition wall 170 may be made of a resin other than a polyimide resin, for example, an inorganic material such as an epoxy resin, an acrylic resin, or silicon dioxide.

The partition wall 170 has a trapezoidal cross-sectional shape (reverse trapezoid). That is, the width of the upper surface of the partition wall 170 is larger than the width of the lower surface of the partition wall 170. Therefore, if the partition wall 170 is formed before the second electrode 130, the second electrode 130 is formed on one surface side of the substrate 100 by using an evaporation method or a sputtering method. Can be formed collectively. The partition wall 170 also has a function of dividing the organic layer 120.

Also in this embodiment, the light emitting device 10 includes the first inorganic layer 200, the second inorganic layer 210, the first region 202, and the second region 212.

Next, a method for manufacturing the light emitting device 10 in this embodiment will be described. First, the substrate 100, the first inorganic layer 200, and the second inorganic layer 210 are formed. These forming methods are the same as those in the embodiment. Next, the first electrode 110 and the lead wires 114 and 134 are formed on the substrate 100. These forming methods are the same as those in Example 1.

Next, a conductor layer 180 is formed on the lead wiring 114 and the lead wiring 134. Next, the insulating layer 150 is formed, and further the partition 170 is formed. Next, as in the embodiment, the organic layer 120 and the second electrode 130 are formed.

Also in the present example, as in the embodiment and the modification, even if the substrate 100 is curved in the first region 202, the first inorganic layer 200 is not cracked. Therefore, the reliability of the light emitting device 10 does not decrease.

As mentioned above, although embodiment and the Example were described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable.

Claims (5)

A substrate formed using a resin;
A first inorganic layer formed on the first surface of the substrate;
A plurality of light emitting portions formed on the first inorganic layer and having an organic layer;
With
The first surface has a first region which is a region where the first inorganic layer is not formed, and the first region is at least part of a region located between the plurality of light emitting units. Light emitting device located. The light-emitting device according to claim 1.
The plurality of light emitting units are arranged side by side in a first direction,
The light emitting device, wherein the first inorganic layer is divided between the plurality of light emitting units by the first region. The light-emitting device according to claim 1 or 2,
The substrate has a bent portion that is bent in a region where the light emitting portion is not formed,
The bent portion is a light emitting device located in the first region. The light emitting device according to any one of claims 1 to 3,
A second inorganic layer formed on the second surface of the substrate;
The light emitting device, wherein the second surface has a second region that is a region where the second inorganic layer is not formed in a region overlapping the first region. The light emitting device according to any one of claims 1 to 4,
The first inorganic layer is a light emitting device including at least one of silicon oxide, silicon oxynitride, carbon-added silicon oxide, silicon nitride, aluminum oxide, and titanium oxide.

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