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WO2016152707A1 - Measuring method, measuring device and measuring chip - Google Patents

Measuring method, measuring device and measuring chip Download PDF

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Publication number
WO2016152707A1
WO2016152707A1 PCT/JP2016/058464 JP2016058464W WO2016152707A1 WO 2016152707 A1 WO2016152707 A1 WO 2016152707A1 JP 2016058464 W JP2016058464 W JP 2016058464W WO 2016152707 A1 WO2016152707 A1 WO 2016152707A1
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WIPO (PCT)
Prior art keywords
light
prism
metal film
measurement
measuring
Prior art date
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Ceased
Application number
PCT/JP2016/058464
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French (fr)
Japanese (ja)
Inventor
悠一 京極
渡辺 満
野田 哲也
伸浩 山内
史生 長井
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Konica Minolta Inc
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Konica Minolta Inc
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Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP2017508282A priority Critical patent/JP6954116B2/en
Publication of WO2016152707A1 publication Critical patent/WO2016152707A1/en
Anticipated expiration legal-status Critical
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence

Definitions

  • the present invention relates to a measuring method and measuring apparatus for measuring a substance to be measured, and a measuring chip that can be used for measuring the substance to be measured.
  • SPFS Surface Plasmon-field enhanced Fluorescence Spectroscopy
  • a measurement chip having a prism (transparent support), a metal film formed on the prism, and a capturing body (for example, an antibody) fixed on the metal film is used.
  • a specimen containing a substance to be measured is supplied onto the metal film, the substance to be measured is captured by the capturing body (primary reaction).
  • the captured substance to be measured is further labeled with a fluorescent substance (secondary reaction).
  • secondary reaction when the metal film is irradiated with excitation light through the prism at an angle at which surface plasmon resonance occurs, localized field light can be generated on the surface of the metal film.
  • This localized field light selectively excites the fluorescent substance that labels the substance to be measured captured on the metal film, and the fluorescence emitted from the fluorescent substance is observed.
  • fluorescence is detected and the presence or amount of a substance to be measured is measured.
  • an optical blank measurement is performed before performing the secondary reaction.
  • the substance to be measured can be measured with high accuracy by calculating the signal value by subtracting the optical blank value from the detected value of the amount of fluorescence light (hereinafter also simply referred to as “fluorescence value”).
  • the measurement device using SPFS uses a highly sensitive light-receiving sensor such as a photomultiplier tube (PMT) or avalanche photodiode (APD). It is common to do.
  • PMT photomultiplier tube
  • APD avalanche photodiode
  • these high-sensitivity light-receiving sensors are suitable for detecting weak light, but have a problem that high-precision temperature control is required because the light-receiving sensitivity varies greatly with temperature.
  • the present inventors examined using a light receiving sensor (for example, a photodiode (PD)) whose change in light receiving sensitivity is small even when the temperature changes.
  • a light receiving sensor for example, a photodiode (PD)
  • the present inventors use SPFS to measure a small amount of light even when using a light-sensitive sensor such as a PD. It has been found that substances can be measured with high accuracy.
  • the substance to be measured is measured with high accuracy by the attenuation of the amount of autofluorescence emitted from the measurement chip. You may not be able to.
  • a first object of the present invention is a measurement method and a measurement apparatus using SPFS, and even when high-power excitation light is irradiated, the influence of attenuation of the amount of autofluorescence emitted from the measurement chip Is to provide a measurement method and a measurement apparatus capable of measuring a substance to be measured with high accuracy.
  • a second object of the present invention is a measurement chip that can be used in a measurement method and a measurement apparatus using SPFS, and is emitted from the measurement chip even when irradiated with high-power excitation light. It is to provide a measuring chip capable of measuring a substance to be measured with high accuracy while suppressing fluctuations in the amount of autofluorescent light.
  • a measurement method detects fluorescence emitted from a fluorescent substance that is labeled with a substance to be measured, excited by localized field light based on surface plasmon resonance.
  • a measurement method for measuring a signal value indicating the presence or amount of the substance to be measured wherein the measurement chip includes a prism made of a resin as a dielectric and a metal film disposed on one surface of the prism.
  • a fourth step of calculating is
  • a measuring device is equipped with a measuring chip having a prism made of resin as a dielectric and a metal film disposed on one surface of the prism, By irradiating the metal film with excitation light through the prism, a fluorescent substance that labels the substance to be measured existing on the metal film is excited by localized field light based on surface plasmon resonance, and emitted from the fluorescent substance.
  • a measuring device for measuring a signal value indicating the presence or amount of the substance to be measured by detecting the detected fluorescence, a holder for holding the measuring chip, and autofluorescence emitted from the prism
  • a light irradiating unit for irradiating the measurement chip held by the holder with light for attenuating the amount of light and excitation light for exciting the fluorescent material
  • a light detection unit that detects light emitted from the measurement chip when the irradiation unit irradiates light to the measurement chip
  • a processing unit that processes a detection value obtained by the light detection unit; and the light irradiation.
  • a control unit for controlling the operation of the light detection unit, and the control unit is configured to measure the optical blank value in a state where the fluorescent material is not present on the metal film.
  • the light irradiator is controlled to irradiate the metal film with excitation light through the prism so that surface plasmon resonance occurs
  • the light detector is configured to detect light emitted from the measurement chip.
  • the control unit may cause surface plasmon resonance to occur in the metal film in a state where the target substance labeled with the fluorescent substance exists on the metal film.
  • the light irradiation unit is controlled to irradiate the metal film with excitation light through a mechanism, and the light detection unit is controlled to detect fluorescence emitted from the fluorescent material.
  • the signal value is calculated by subtracting the optical blank value from the value.
  • a measurement chip detects fluorescence emitted from a fluorescent substance that is labeled with a substance to be measured, excited by localized field light based on surface plasmon resonance.
  • a measuring chip used in a measuring method for measuring the presence or amount of the substance to be measured comprising a prism made of a resin as a dielectric, and a metal film disposed on one surface of the prism
  • the decay rate of the amount of autofluorescence emitted from the prism is 1 when the prism is irradiated twice with light having the same irradiation energy as the excitation light that irradiates the metal film when detecting the fluorescence. % Or less.
  • a substance to be measured can be measured with high sensitivity and high accuracy.
  • FIG. 1 is a diagram showing a configuration of a surface plasmon excitation enhanced fluorescence measuring apparatus according to an embodiment of the present invention.
  • FIG. 2 is a flowchart showing an example of the operation procedure of the surface plasmon excitation enhanced fluorescence measurement apparatus.
  • FIG. 3A is a graph showing the relationship between the irradiation energy of the excitation light applied to the prism of the measurement chip and the optical blank value.
  • FIGS. 3B and 3C are diagrams for explaining the effect of aging on the prism of the measurement chip. It is a conceptual diagram.
  • FIG. 4 is a graph showing the relationship between the irradiation energy of the light applied to the resin member of the measurement chip and the attenuation factor of the optical blank value.
  • SPFS apparatus surface plasmon excitation enhanced fluorescence measurement apparatus
  • SPR surface plasmon resonance
  • Embodiment 1 a measurement apparatus and a measurement method for measuring a substance to be measured using a measurement chip having a resin member that is not aged will be described.
  • aging means that the resin member is irradiated with light to intentionally attenuate the amount of autofluorescence emitted from the resin member.
  • FIG. 1 is a diagram illustrating a configuration of the SPFS apparatus 100 according to the first embodiment.
  • the SPFS device 100 includes a chip holder 110 for detachably holding the measurement chip 10, a light irradiation unit (light irradiation unit) 120 for irradiating the measurement chip 10 with light, A light receiving unit (light detection unit) 130 for detecting light (autofluorescence, plasmon scattered light ⁇ or fluorescence ⁇ ) emitted from the measurement chip 10, a control unit (processing unit) 140 for controlling these, and a measurement chip 10 and a liquid feeding unit (not shown) for feeding liquid.
  • the SPFS device 100 is used with the measurement chip 10 mounted on the chip holder 110. Therefore, the measurement chip 10 will be described first, and then each component of the SPFS device 100 will be described.
  • the measuring chip 10 includes a prism 20 having an incident surface 21, a film formation surface 22 and an emission surface 23, a metal film 30 formed on the film formation surface 22, and a film formation surface 22.
  • a flow path lid 40 disposed on the metal film 30 is included.
  • the measuring chip 10 is replaced for each measurement (analysis).
  • the prism 20 is transparent to the excitation light ⁇ and is made of a resin that is a dielectric.
  • the prism 20 has an incident surface 21, a film forming surface 22, and an exit surface 23.
  • the incident surface 21 causes the excitation light ⁇ from the light irradiation unit 120 to enter the prism 20.
  • a metal film 30 is disposed on the film formation surface 22.
  • the excitation light ⁇ incident on the inside of the prism 20 is reflected by the metal film 30. More specifically, the light is reflected at the interface (deposition surface 22) between the prism 20 and the metal film 30.
  • the emission surface 23 emits the excitation light ⁇ reflected by the metal film 30 to the outside of the prism 20.
  • the shape of the prism 20 is not particularly limited.
  • the shape of the prism 20 is a column having a trapezoidal bottom surface.
  • the surface corresponding to one base of the trapezoid is the film formation surface 22, the surface corresponding to one leg is the incident surface 21, and the surface corresponding to the other leg is the emission surface 23.
  • the trapezoid serving as the bottom surface is preferably an isosceles trapezoid.
  • the entrance surface 21 and the exit surface 23 are symmetric, and the S wave component of the excitation light ⁇ is less likely to stay in the prism 20.
  • the incident surface 21 is formed so that the excitation light ⁇ does not return to the light irradiation unit 120.
  • the angle of the incident surface 21 is set so that the excitation light ⁇ does not enter the incident surface 21 perpendicularly in a scanning range centered on an ideal resonance angle or enhancement angle.
  • the “resonance angle” means an incident angle when the amount of reflected light emitted from the emission surface 23 is minimized when the incident angle of the excitation light ⁇ with respect to the metal film 30 is scanned.
  • the “enhancement angle” refers to scattered light having the same wavelength as the excitation light ⁇ emitted above the measurement chip 10 when the incident angle of the excitation light ⁇ with respect to the metal film 30 is scanned (hereinafter referred to as “plasmon scattered light”). This means the angle of incidence when the light quantity of ⁇ is maximized.
  • the angle between the incident surface 21 and the film formation surface 22 and the angle between the film formation surface 22 and the emission surface 23 are both about 80 °.
  • the resin constituting the prism 20 examples include polymethyl methacrylate (PMMA), polycarbonate (PC), cycloolefin-based polymer, and the like.
  • the resin constituting the prism 20 is preferably a resin having a refractive index of 1.4 to 1.6 and a small birefringence.
  • the prism 20 When the prism 20 is formed using the resin (composition) as described above, the prism 20 usually emits autofluorescence when irradiated with light.
  • the metal film 30 is formed on the film formation surface 22 of the prism 20.
  • an interaction surface plasmon resonance; SPR
  • SPR surface plasmon resonance
  • the material of the metal film 30 is not particularly limited as long as it is a metal that causes surface plasmon resonance.
  • Examples of the material of the metal film 30 include gold, silver, copper, aluminum, and alloys thereof.
  • the metal film 30 is a gold thin film.
  • the method for forming the metal film 30 is not particularly limited. Examples of the method for forming the metal film 30 include sputtering, vapor deposition, and plating.
  • the thickness of the metal film 30 is not particularly limited, but is preferably in the range of 30 to 70 nm.
  • a capturing body for capturing the substance to be measured is fixed to the surface of the metal film 30 that does not face the prism 20. By fixing the capturing body, it becomes possible to selectively measure the substance to be measured.
  • at least a part of the surface of the metal film 30 is set as a reaction field.
  • the central portion of the surface of the metal film 30 is set as the reaction field.
  • a trap is uniformly fixed in the reaction field.
  • the type of the capturing body is not particularly limited as long as the substance to be measured can be captured.
  • the capturing body is an antibody or a fragment thereof that can specifically bind to the substance to be measured.
  • the channel lid 40 is disposed on the surface of the metal film 30 that does not face the prism 20 with the channel 41 interposed therebetween.
  • the channel lid 40 may be disposed on the film formation surface 22 with the channel 41 interposed therebetween.
  • the flow path lid 40 and the metal film 30 (and the prism 20) form a flow path 41 through which a liquid such as a specimen, a fluorescent labeling liquid, and a cleaning liquid flows.
  • the reaction field is exposed in the flow path 41.
  • Both ends of the channel 41 are connected to an inlet and an outlet (both not shown) formed on the upper surface of the channel lid 40, respectively. When liquids are injected into the channel 41, these liquids contact the reaction field capturing body in the channel 41.
  • the channel lid 40 is a resin member made of a material that is transparent to light (plasmon scattered light ⁇ and fluorescence ⁇ ) emitted from the reaction field of the metal film 30.
  • the material of the channel lid 40 is not particularly limited as long as it is transparent to these lights. As long as these lights can be guided to the light receiving unit 130, a part of the flow path lid 40 may be formed of an opaque material.
  • the channel lid 40 is bonded to the metal film 30 or the prism 20 by, for example, adhesion using a double-sided tape or an adhesive, laser welding, ultrasonic welding, or pressure bonding using a clamp member.
  • the resonance angle (and the enhancement angle near the pole) is generally determined by the design of the measurement chip 10.
  • the design factors are the refractive index of the prism 20, the refractive index of the metal film 30, the film thickness of the metal film 30, the extinction coefficient of the metal film 30, the wavelength of the excitation light ⁇ , and the like.
  • the resonance angle and the enhancement angle are shifted by the substance to be measured trapped on the metal film 30, but the amount is less than several degrees.
  • the excitation light ⁇ guided to the prism 20 enters the prism 20 through the incident surface 21.
  • the excitation light ⁇ incident on the prism 20 is incident on the interface (deposition surface 22) between the prism 20 and the metal film 30 so as to have a total reflection angle (an angle at which surface plasmon resonance occurs).
  • the reflected light from the interface is emitted from the prism 20 on the emission surface 23 (not shown).
  • autofluorescence is emitted from the region that is the optical path of the excitation light ⁇ in the prism 20.
  • Part of the autofluorescence passes through the metal film 30 and the flow path lid 40 and travels toward the light receiving unit 130.
  • plasmon scattered light ⁇ and fluorescence ⁇ are emitted from the reaction field toward the light receiving unit 130.
  • the SPFS device 100 includes the chip holder 110, the light irradiation unit (light irradiation unit) 120, the light receiving unit (light detection unit) 130, and the control unit (processing unit) 140.
  • the chip holder 110 holds the measurement chip 10 at a predetermined position.
  • the measurement chip 10 is irradiated with the excitation light ⁇ from the light irradiation unit 120 while being held by the chip holder 110.
  • the light irradiation unit 120 emits light for aging the measurement chip 10 (hereinafter referred to as “aging light”) and excitation light ⁇ (single mode laser light) toward the measurement chip 10 held by the chip holder 110. Irradiate. More specifically, the light source unit 121 irradiates the back surface of the metal film 30 corresponding to the region where the capturing body is fixed from the prism 20 side of the measuring chip 10 with the excitation light ⁇ at a total reflection angle. . The light source unit 121 irradiates the prism 20 with aging light so as to overlap at least the optical path of the excitation light ⁇ in the prism 20.
  • the light irradiation unit 120 includes a light source unit 121 that emits excitation light ⁇ , an angle adjustment unit 122 that adjusts the incident angle of the excitation light ⁇ with respect to the interface (deposition surface 22) between the prism 20 and the metal film 30, and a light source unit. And a light source control unit 123 that controls various devices included in the device 121.
  • the light source unit 121 emits aging light and excitation light ⁇ .
  • the light source unit 121 includes an aging light source, an excitation light ⁇ light source, a beam shaping optical system, an APC mechanism, and a temperature adjustment mechanism (all not shown).
  • the type of the light source for aging light is not particularly limited, but from the viewpoint of efficiently performing aging, it is preferably a high power light source capable of emitting light having the same wavelength as that of the excitation light ⁇ .
  • the type of the light source of the excitation light ⁇ is not particularly limited, but from the viewpoint of using a light-sensitive sensor such as a photodiode (PD) as the light receiving sensor 135, a high-power light source is preferable.
  • the light source of the excitation light ⁇ also serves as the light source of aging light, and the central wavelength of the excitation light ⁇ and the central wavelength of the aging light are the same.
  • the light source of the excitation light ⁇ and aging light is, for example, a laser diode (LD).
  • LD laser diode
  • Other examples of light source types include light emitting diodes, mercury lamps, and other laser light sources.
  • the light emission power of the light source is 1 mW / mm 2 or more.
  • the light source of aging light and the light source of excitation light ⁇ may be different.
  • the excitation light ⁇ emitted from the light source of the excitation light ⁇ is not a beam
  • the excitation light ⁇ emitted from the light source of the excitation light ⁇ is converted into a beam by a lens, a mirror, a slit, or the like.
  • the excitation light ⁇ emitted from the light source of the excitation light ⁇ is not monochromatic light
  • the excitation light ⁇ emitted from the light source of the excitation light ⁇ is converted into monochromatic light by a diffraction grating or the like.
  • the excitation light ⁇ emitted from the light source of the excitation light ⁇ is not linearly polarized light
  • the excitation light ⁇ emitted from the light source of the excitation light ⁇ is converted into linearly polarized light by a polarizer or the like.
  • the beam shaping optical system includes, for example, a collimator, a band pass filter, a linear polarization filter, a half-wave plate, a slit, and a zoom means.
  • the beam shaping optical system may include all of these or a part thereof.
  • the collimator collimates the excitation light ⁇ emitted from the light source of the excitation light ⁇ .
  • the band-pass filter turns the excitation light ⁇ emitted from the light source of the excitation light ⁇ into narrowband light having only the center wavelength. This is because the excitation light ⁇ from the light source of the excitation light ⁇ has a slight wavelength distribution width.
  • the linear polarization filter turns the excitation light ⁇ emitted from the light source of the excitation light ⁇ into completely linearly polarized light.
  • the half-wave plate adjusts the polarization direction of the excitation light ⁇ so that the P-wave component light is incident on the metal film 30.
  • the slit and zoom means adjust the beam diameter, contour shape, and the like of the excitation light ⁇ so that the shape of the irradiation spot on the back surface of the metal film 30 is a circle of a predetermined size.
  • the APC mechanism controls the light source of the excitation light ⁇ so that the output of the light source of the excitation light ⁇ is constant. More specifically, the APC mechanism detects the amount of light branched from the excitation light ⁇ with a photodiode (not shown) or the like. Then, the APC mechanism controls the input energy by the regression circuit, thereby controlling the output of the light source of the excitation light ⁇ to be constant.
  • the temperature adjustment mechanism is, for example, a heater or a Peltier element.
  • the wavelength and energy of the light emitted from the light source of the excitation light ⁇ may vary depending on the temperature. For this reason, the wavelength and energy of the light emitted from the light source are controlled to be constant by keeping the temperature of the light source constant by the temperature adjusting mechanism.
  • the angle adjusting unit 122 adjusts the incident angles of the excitation light ⁇ and the aging light to the metal film 30 (the interface between the prism 20 and the metal film 30 (film formation surface 22)).
  • the angle adjusting unit 122 is configured to irradiate the excitation light ⁇ and the aging light at a predetermined incident angle on the metal film 30 (deposition surface 22) with a predetermined incident angle.
  • the tip holder 110 is rotated relatively.
  • the angle adjustment unit 122 rotates the light source unit 121 around an axis (axis perpendicular to the paper surface of FIG. 1) orthogonal to the optical axis of the excitation light ⁇ on the metal film 30.
  • the position of the rotation axis is set so that the irradiation position on the metal film 30 (deposition surface 22) hardly moves even when the incident angle is scanned.
  • the position of the rotation center is set near the intersection of the optical axes of the two excitation lights ⁇ at both ends of the scanning range of the incident angle (between the irradiation position on the film forming surface 22 and the incident surface 21 of the prism 20).
  • the deviation of the irradiation position can be minimized.
  • the light source control unit 123 controls various devices included in the light source unit 121 to adjust the power and irradiation time of the excitation light ⁇ and the aging light from the light source unit 121.
  • the light source control unit 123 includes, for example, a known computer or microcomputer including an arithmetic device, a control device, a storage device, an input device, and an output device.
  • the light receiving unit 130 is disposed so as to face the surface of the metal film 30 of the measurement chip 10 held by the chip holder 110 that does not face the prism 20.
  • the light receiving unit 130 detects autofluorescence emitted from the measurement chip 10 and light (plasmon scattered light ⁇ or fluorescence ⁇ ) emitted from the metal film 30.
  • the light receiving unit 130 includes a first lens 132, an optical filter 133, a second lens 134, and a light receiving sensor 135 disposed in the light receiving optical system unit 131, a position switching mechanism 136, and an optical sensor control unit 137.
  • the first lens 132 is, for example, a condensing lens, and condenses light emitted from the metal film 30.
  • the second lens 134 is, for example, an imaging lens, and forms an image of the light collected by the first lens 132 on the light receiving surface of the light receiving sensor 135. Between both lenses, the light is a substantially parallel light beam.
  • the optical filter 133 is disposed between the first lens 132 and the second lens 134.
  • the optical filter 133 removes the excitation light component (plasmon scattered light ⁇ ) in order to guide only the fluorescence component to the light receiving sensor 135 and detect the fluorescence ⁇ with a high S / N ratio.
  • Examples of the optical filter 133 include an excitation light reflection filter, a short wavelength cut filter, and a band pass filter.
  • the optical filter 133 is, for example, a filter including a multilayer film that reflects a predetermined light component, or a color glass filter that absorbs a predetermined light component.
  • the light receiving sensor 135 detects autofluorescence, plasmon scattered light ⁇ and fluorescence ⁇ emitted from the measurement chip 10.
  • the type of the light receiving sensor 135 is not particularly limited as long as the above object can be achieved. However, it is preferable that the variation in measured values is small even when the amount of received light is increased, and that the change in characteristics due to a temperature change is small.
  • the light receiving sensor 135 is, for example, a photodiode (PD).
  • PD photodiode
  • the present inventors increase the power of the light source of the excitation light ⁇ (for example, 1 mW / mm 2 or more), so that the SPFS can be used even when the light receiving sensor 135 that is not highly sensitive like PD is used. It has been confirmed that it is possible to measure a very small amount of a substance to be measured with high accuracy.
  • the position switching mechanism 136 switches the position of the optical filter 133 on or off the optical path in the light receiving optical system unit 131. Specifically, when the light receiving sensor 135 measures the optical blank value or the fluorescence value, the optical filter 133 is disposed on the optical path in the light receiving optical system unit 131, and when the light receiving sensor 135 detects the plasmon scattered light ⁇ , the optical filter 133 is optical. A filter 133 is disposed outside the optical path.
  • the light sensor control unit 137 detects the output value of the light receiving sensor 135, manages the sensitivity of the light receiving sensor 135 based on the detected output value, and controls the sensitivity of the light receiving sensor 135 to obtain an appropriate output value.
  • the optical sensor control unit 137 includes, for example, a known computer or microcomputer including an arithmetic device, a control device, a storage device, an input device, and an output device.
  • the control unit 140 controls the angle adjustment unit 122, the light source control unit 123, the position switching mechanism 136, and the optical sensor control unit 137.
  • the control unit 140 also functions as a processing unit for calculating a signal value indicating the presence or amount of the substance to be measured based on the detection result of the light receiving sensor 135.
  • the control unit 140 includes, for example, a known computer or microcomputer including an arithmetic device, a control device, a storage device, an input device, and an output device.
  • FIG. 2 is a flowchart illustrating an example of an operation procedure of the SPFS apparatus.
  • step S10 preparation for measurement is performed (step S10).
  • the measurement chip 10 is installed in the chip holder 110 of the SPFS device 100. Further, when a humectant is present in the flow channel 41 of the measurement chip 10, the humectant is removed by washing the flow channel 41 so that the capturing body can appropriately capture the substance to be measured.
  • the enhancement angle is measured (step S20). Specifically, the irradiation angle of the excitation light ⁇ with respect to the metal film 30 (deposition surface 22) is scanned while irradiating the predetermined position of the metal film 30 (deposition surface 22) with the excitation light ⁇ , and the optimum Determine the angle of incidence.
  • the control unit 140 controls the light source control unit 123 and the angle adjustment unit 122 to irradiate the excitation light ⁇ from the light source unit 121 to a predetermined position of the metal film 30 (deposition surface 22), while forming the metal film 30 (the formation film).
  • the incident angle of the excitation light ⁇ with respect to the film surface 22) is scanned.
  • control unit 140 controls the position switching mechanism 136 to move the optical filter 133 out of the optical path of the light receiving optical system unit 131.
  • control unit 140 controls the optical sensor control unit 137 so that the light receiving sensor 135 detects the plasmon scattered light ⁇ .
  • the control unit 140 obtains data including the relationship between the incident angle of the excitation light ⁇ and the intensity of the plasmon scattered light ⁇ .
  • the control unit 140 analyzes the data and determines an incident angle (enhancement angle) that maximizes the intensity of the plasmon scattered light ⁇ .
  • the enhancement angle is determined by the material and shape of the prism 20, the thickness of the metal film 30, the refractive index of the liquid in the flow channel 41, etc. It varies slightly due to various factors such as. For this reason, it is preferable to determine the enhancement angle every time measurement is performed.
  • the enhancement angle is determined on the order of about 0.1 °.
  • the incident angle of the excitation light ⁇ with respect to the metal film 30 (deposition surface 22) is set to the enhancement angle determined in step S20 (step S30).
  • the control unit 140 controls the angle adjustment unit 122 to set the incident angle of the excitation light ⁇ with respect to the metal film 30 (deposition surface 22) as an enhancement angle.
  • the light source of the aging light and the light source of the excitation light ⁇ are the same, and the optical paths of the aging light and the excitation light ⁇ in the prism 20 are the same. Therefore, the optical path of the aging light in the prism 20 is also set by this process.
  • the incident angle of the excitation light ⁇ with respect to the metal film 30 (deposition surface 22) remains the enhancement angle.
  • the measurement chip 10 is aged (step S40).
  • the control unit 140 Prior to the measurement of the optical blank value (step S50) and the measurement of the fluorescence value (step S80), the control unit 140 causes the prism 20 to emit light of autofluorescence in order to attenuate the amount of autofluorescence emitted from the prism 20.
  • the light irradiation unit 120 is controlled to emit light for attenuating the light.
  • the control unit 140 controls the light source control unit 123 to irradiate the resin member (prism 20) of the measurement chip 10 with aging light from the light source unit 121.
  • the control unit 140 attenuates the amount of autofluorescence to the prism 20 until the attenuation rate A of the amount of autofluorescence emitted from the prism 20 satisfies the following formula (1). It is preferable to control the light irradiation unit 120 so that the light for making it irradiate.
  • the “attenuation rate of the amount of light of autofluorescence” refers to the autofluorescence emitted during the first light irradiation when the resin member of the measurement chip 10 is irradiated twice with light under the same conditions for a unit time. This means the degree of decrease in the amount of autofluorescence emitted during the second light irradiation with respect to the amount of light.
  • the two light irradiations may be performed continuously or intermittently.
  • the output of the light source may be increased or the irradiation time may be lengthened. At this time, the irradiation conditions of the aging light can be appropriately set according to the required measurement accuracy, the resin material of the prism 20, and the like.
  • irradiation power, irradiation time, etc. should just be set so that total irradiation energy may be 225 mW * second / mm ⁇ 2 > or more.
  • the irradiation of light with an irradiation energy of 2.6 mW ⁇ sec / mm 2 or more is performed, and the measurement chip 10 is aged until the decay rate A of the amount of autofluorescent light satisfies the above equation (1). I do.
  • step S20 the step of measuring the enhancement angle (step S20) and the step of aging the resin member of the measurement chip 10 (step S40) may be performed simultaneously.
  • the power or time of the excitation light ⁇ (aging light) irradiated when measuring the enhancement angle may be adjusted so that the amount of autofluorescence emitted from the measurement chip 10 can be attenuated.
  • the excitation light ⁇ is irradiated to the metal film 30 (deposition surface 22) through the prism 20, and light having the same wavelength as the fluorescence ⁇ .
  • the “optical blank value” means the amount of background light measured together with the fluorescence in the measurement of the fluorescence value (step S80). This background light is mainly caused by autofluorescence emitted from the measurement chip 10 (prism 20) when the excitation light ⁇ is irradiated.
  • the control unit 140 transmits the excitation light ⁇ to the metal film 30 through the prism 20 so that surface plasmon resonance occurs in the metal film 30 in a state where the fluorescent material is not present on the metal film 30.
  • the light irradiation unit 120 is controlled to irradiate, and the light receiving unit 130 is controlled to detect the light emitted from the measurement chip 10.
  • the control unit 140 controls the position switching mechanism 136 to move the optical filter 133 onto the optical path of the light receiving optical system unit 131.
  • the control unit 140 controls the light source control unit 123 to emit the excitation light ⁇ from the light source unit 121 toward the metal film 30 (film formation surface 22).
  • control unit 140 controls the light sensor control unit 137 so that the light receiving sensor 135 detects the amount of light having the same wavelength as the fluorescence ⁇ . Thereby, the light receiving sensor 135 can accurately measure the amount of light (optical blank value) that becomes noise. The measured value is transmitted to the control unit 140 and recorded as an optical blank value.
  • control unit 140 controls the light irradiation unit 120 and the light receiving unit 130 so as to measure the optical blank value twice, compares the obtained optical blank value, and compares the obtained optical blank value. It may be confirmed that the aging is sufficiently performed (for example, the attenuation rate A of the amount of autofluorescence light satisfies the above formula (1) (for example, A ⁇ 1%)). .
  • the substance to be measured in the sample is reacted with the capturing body (primary reaction; step S60). Specifically, the sample is injected into the channel 41 on the liquid feeding unit side, and the sample and the capturing body are brought into contact with each other. When the substance to be measured exists in the specimen, at least a part of the substance to be measured is captured by the capturing body. Thereafter, the inside of the flow path 41 is washed with a buffer solution or the like to remove substances not captured by the capturing body.
  • the type of specimen is not particularly limited. Examples of the specimen include body fluids such as blood, serum, plasma, urine, nasal fluid, saliva, semen, and diluted solutions thereof.
  • a fluorescent labeling solution is provided in the channel 41.
  • the fluorescent labeling solution is, for example, a buffer solution containing an antibody (secondary antibody) labeled with a fluorescent substance.
  • the fluorescent labeling liquid comes into contact with the substance to be measured, and the substance to be measured is labeled with the fluorescent substance. Thereafter, the inside of the flow path 41 is washed with a buffer solution or the like to remove free fluorescent substances.
  • the metal film 30 (deposition surface 22) is irradiated with the excitation light ⁇ through the prism 20, so that the measurement target substance in the reaction field is irradiated.
  • the fluorescence value from the fluorescent substance to be labeled is measured (step S80).
  • the control unit 140 allows the metal film to pass through the prism 20 so that surface plasmon resonance occurs in the metal film 30 in a state where the measurement target substance labeled with the fluorescent substance exists on the metal film 30.
  • the light irradiation unit 120 is controlled so as to irradiate 30 with the excitation light ⁇
  • the light receiving unit 130 is controlled so as to detect the fluorescence emitted from the fluorescent material.
  • the control unit 140 controls the light source control unit 123 to emit the excitation light ⁇ from the light source unit 121.
  • the control unit 140 controls the optical sensor control unit 137 to detect the fluorescence ⁇ emitted from the fluorescent substance that labels the substance to be measured by the light receiving sensor 135.
  • the fluorescence value mainly includes a fluorescent component (signal value) derived from a fluorescent substance that labels the substance to be measured, and a fluorescent component (optical blank value) derived from the autofluorescence of the measurement chip 10. Therefore, the control unit 140 can calculate a signal value correlated with the amount of the substance to be measured by subtracting the optical blank value obtained in step S50 from the fluorescence value obtained in step S80. The signal value is converted into the amount and concentration of the substance to be measured by a calibration curve prepared in advance.
  • the signal value indicating the presence or amount of the substance to be measured can be measured by the above procedure.
  • the control unit 140 determines that the optical path in the measurement chip 10 of the light irradiated to attenuate the amount of autofluorescence is the optical blank value and the fluorescence value. It is preferable to control the light irradiation unit 120 so as to overlap the optical path in the measurement chip 10 of the excitation light ⁇ irradiated for measuring the light. That is, it is preferable that the optical path in the measurement chip 10 for light for aging in step S40 and the optical path in the measurement chip 10 for excitation light ⁇ in steps S50 and S80 overlap.
  • the control unit 140 determines that the power of the light irradiated to attenuate the amount of autofluorescence is excitation light irradiated to measure the optical blank value and the fluorescence value. It is preferable to control the light irradiation unit 120 to be higher than the power of ⁇ . That is, the power (mW / mm 2 ) of the aging light in step S40 is preferably higher than the power (mW / mm 2 ) of the excitation light ⁇ in step S50 and step S80.
  • the primary reaction (step S60) and the secondary reaction (step S70) are continuously performed, and the measurement chip 10 is placed between the light irradiation unit 120 and the light receiving unit from the liquid feeding unit side between the two steps. It is not moved to the unit 130 side. For this reason, the total time concerning detection can be shortened by the moving time of the measuring chip 10. In addition, the measurement accuracy can be improved by keeping the primary reaction time, the secondary reaction time, and the interval time between the primary reaction and the secondary reaction constant.
  • the order which performs the process (process S50) which measures an optical blank value, and the process (process S60) which performs a primary reaction is not limited to this, An optical blank value is measured after performing a primary reaction. Also good.
  • the optical blank value can be measured in a state where the substance to be measured is captured by the capturing body.
  • the optical blank value can be measured more accurately, and the measurement accuracy can be further improved.
  • Reference Experiment 1 the result of having investigated about the effect of the aging with respect to the resin member (prism 20) of the measurement chip
  • the optical blank value was measured by intermittently irradiating the metal film 30 of the measurement chip 10 with the excitation light ⁇ from the prism 20 side so that the incident angle becomes an enhancement angle.
  • the prism 20 of the measuring chip 10 was intermittently irradiated with light having an irradiation energy of 22.6 mW ⁇ sec / mm 2 .
  • a high power LD was used as the light source, and a photodiode (PD) was used as the light receiving sensor 135.
  • the material of the prism 20 is a cycloolefin polymer.
  • FIG. 3A is a graph showing the relationship between the irradiation energy of the excitation light ⁇ irradiated on the prism 20 of the measurement chip 10 and the optical blank value
  • FIGS. 3B and 3C show the effects of aging on the prism 20 of the measurement chip 10.
  • the horizontal axis represents the total irradiation energy (mW ⁇ second / mm 2 ) of the excitation light ⁇ irradiated to the prism 20, and the vertical axis represents the optical blank value (au).
  • 3B and 3C are conceptual diagrams showing the relationship between the optical blank value, the fluorescence value, and the signal value.
  • OB OB1 and OB2 indicates an optical blank value
  • F indicates a fluorescence value
  • S S1 and S2 indicates a signal value.
  • OB, F, and S satisfy the following formula (3).
  • S F-OB (3)
  • the optical blank value decreases logarithmically (or exponentially) as the excitation light ⁇ is irradiated.
  • the amount of autofluorescence emitted from the measurement chip 10 decreases as the resin member of the measurement chip 10 is irradiated with the excitation light ⁇ .
  • the autofluorescence decay rate decreases as the excitation light ⁇ is irradiated.
  • the optical blank value OB1 and the fluorescence value F are measured with a light amount as shown in FIG. 3B (for convenience of explanation, the light amount of the optical blank value is increased). Since the measurement of the fluorescence value F is performed after the measurement of the optical blank value OB1, considering the graph of FIG. Is attenuated, and the true optical blank value OB2 when the fluorescence value F is measured is also attenuated.
  • aging is performed by irradiating the measurement chip with light before measuring the optical blank value OB1.
  • the attenuation rate of the amount of autofluorescence decreases as light is irradiated. For this reason, it is measured at the time of measuring the optical blank value by irradiating the prism 20 of the measuring chip 10 with light until the attenuation rate of the light amount of the autofluorescence becomes sufficiently small before measuring the optical blank value OB.
  • the difference ( ⁇ OB) between the optical blank value OB1 and the true optical blank value OB2 when measuring the fluorescence value F can be reduced to a negligible level. As a result, even if the optical blank value OB1 is directly subtracted from the fluorescence value F, a signal value indicating the presence or amount of the substance to be measured can be calculated with high accuracy.
  • the metal film 30 of the measurement chip 10 is irradiated with excitation light ⁇ from the prism 20 side so that the incident angle becomes an enhancement angle (irradiation spot diameter of the excitation light ⁇ on the metal film 30: ⁇ 1. 5 mm), the measurement of the optical blank value was continuously performed.
  • the prism 20 of the measuring chip 10 was intermittently irradiated with light having an irradiation energy of 22.6 mW ⁇ sec / mm 2 .
  • a high power LD was used as the light source, and a photodiode (PD) was used as the light receiving sensor 135.
  • the material of the prism 20 is a cycloolefin polymer.
  • FIG. 4 is a graph showing the relationship between the irradiation energy of the light applied to the resin member of the measuring chip 10 and the attenuation rate of the optical blank value (the amount of autofluorescence).
  • the horizontal axis indicates the total irradiation energy (mW ⁇ second / mm 2 ) of the excitation light ⁇
  • the vertical axis indicates the attenuation rate (%) of the optical blank value.
  • the relationship between the optical blank value and the irradiation energy satisfied the following formula (4) (see FIG. 3A).
  • Optical blank value ⁇ 88 ⁇ ln (irradiation energy) +1275 (4) Moreover, the attenuation factor of the optical blank value was calculated from the following formula (5) based on the optical blank value.
  • Attenuation rate
  • OB n is an optical blank value after irradiation n times the excitation light ⁇ to the measurement chip 10.
  • OB n + 1 is an optical blank value after the measurement chip 10 is irradiated with the excitation light ⁇ n + 1 times.
  • the attenuation factor of the optical blank value became small, so that the resin member of the measurement chip
  • the upper limit value B of an allowable measurement error due to attenuation of the optical blank value is set to less than 1%. Therefore, it was found that the attenuation factor A of the optical blank value also needs to be less than 1%, and light with an irradiation energy of 225 mW ⁇ sec / mm 2 or more should be irradiated as aging light.
  • the measurement method and the measurement apparatus using SPFS have been described.
  • the measurement method and the measurement apparatus according to the present invention are not limited to this, and the measurement includes a high-power light source and a resin member. It can also be used for other fluorescence measurements using the chip.
  • Embodiment 2 In Embodiment 2, an aspect in which a measurement target substance is measured using a measurement chip that has been aged in advance will be described. Since the measurement apparatus according to the present embodiment is the same as the measurement apparatus according to the first embodiment except that the aging light is not irradiated, description of each component of the measurement apparatus is omitted.
  • the measurement chip 10 ′ according to the second embodiment includes a prism 20 ′, a metal film 30, and a channel lid 40.
  • the measurement chip 10 ′ according to the present embodiment is the same as the measurement chip 10 according to the first embodiment except that the prism 20 ′ is pre-aged, and thus description of each component is omitted.
  • the measurement chip 10 ′ according to the present embodiment can be manufactured, for example, by performing a process for producing a measurement chip and a process for aging the chip. Hereinafter, each step will be described.
  • a measurement chip is prepared. Specifically, a prism made of resin as a dielectric and a flow path lid are prepared. Next, the metal film 30 is formed on the prepared prism. For example, the metal film 30 may be formed by vacuum deposition on one surface of a prism formed into a desired shape by injection molding. Next, the capturing body is immobilized on the metal film 30. The method for immobilizing the capturing body is not particularly limited, and can be appropriately selected from known methods. Next, the prism on which the metal film 30 and the reaction field are formed and the flow path lid are fixed. For example, the prism and the channel cover may be bonded with a double-sided tape or an adhesive.
  • the prepared chip is aged. Specifically, the produced chip is irradiated with aging light.
  • the aging light irradiation conditions can be appropriately set according to the type of resin constituting the prism.
  • the aging of the chip is performed until the decay rate of the amount of autofluorescent light emitted when the resin member (prism) of the chip is irradiated with light becomes a desired value (for example, 1%) or less.
  • the irradiation power in this case, irradiation energy of 22.6 mW ⁇ second / mm 2
  • irradiation time etc. so that the total irradiation energy is about 225 mW ⁇ second / mm 2. Should be set.
  • the fluorescent substance that labels the substance to be measured is detected by the fluorescence ⁇ emitted and excited by the localized field light based on the surface plasmon resonance, and the measurement method is used to measure the presence or amount of the substance to be measured.
  • a measurement chip 10 ′ used which has a prism 20 ′ and a metal film 30, and continuously emits light with the same irradiation energy as the excitation light ⁇ irradiated to the metal film 30 when detecting fluorescence.
  • the measurement chip 10 ′ in which the attenuation rate of the amount of autofluorescent light emitted from the prism 20 ′ is less than a desired value (for example, 1%) when irradiated twice can be manufactured.
  • the measurement method for measuring the substance to be measured using the measurement chip 10 ′ according to the present embodiment is the same as the measurement method of the first embodiment except that aging is not performed, and thus the description thereof is omitted. .
  • effect According to the present embodiment, the same effect as in the first embodiment can be obtained without performing aging during measurement.
  • the measurement chip 10 ′ may be manufactured by fixing the aged prism 20 ′ and the channel lid 40. .
  • the measuring method and measuring apparatus can measure a substance to be measured with high sensitivity and high accuracy, and are useful for clinical examinations, for example.

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Abstract

First, light is radiated onto a prism of a measuring chip including said prism, comprising a dielectric resin, and a metal film disposed on one surface of the prism, and the intensity of autofluorescent light emitted from the prism is attenuated. An optical blank value is next measured. Then fluorescence emitted from a fluorescent substance marking a substance being measured is detected, and a fluorescence value is measured. Finally, a signal value is calculated by subtracting the optical blank value from the fluorescence value.

Description

測定方法、測定装置および測定チップMeasuring method, measuring device and measuring chip

 本発明は、被測定物質を測定するための測定方法および測定装置、ならびに被測定物質の測定に使用されうる測定チップに関する。 The present invention relates to a measuring method and measuring apparatus for measuring a substance to be measured, and a measuring chip that can be used for measuring the substance to be measured.

 臨床検査などにおいて、タンパク質やDNAなどの微量の被測定物質を高感度かつ定量的に測定することができれば、患者の状態を迅速に把握して治療を行うことが可能となる。このため、微量の被測定物質を高感度かつ定量的に測定できる測定装置が求められている。 In clinical examinations and the like, if a very small amount of a substance to be measured such as protein or DNA can be measured with high sensitivity and quantity, it becomes possible to quickly grasp the patient's condition and perform treatment. For this reason, there is a need for a measuring apparatus that can measure a minute amount of a substance to be measured with high sensitivity and quantitatively.

 被測定物質を高感度に測定できる測定装置として、表面プラズモン共鳴蛍光分析(表面プラズモン励起増強蛍光分光法(Surface Plasmon-field enhanced Fluorescence Spectroscopy):以下「SPFS」と略記する)を利用する装置が知られている(例えば、特許文献1参照)。 As a measuring device capable of measuring a substance to be measured with high sensitivity, a device using surface plasmon resonance fluorescence analysis (Surface Plasmon-field enhanced Fluorescence Spectroscopy: hereinafter abbreviated as “SPFS”) is known. (For example, refer to Patent Document 1).

 特許文献1に記載の測定装置では、プリズム(透明支持体)と、プリズム上に形成された金属膜と、金属膜上に固定された捕捉体(例えば、抗体)とを有する測定チップを使用する。金属膜上に被測定物質を含む検体を供給すると、被測定物質が捕捉体により捕捉される(1次反応)。捕捉された被測定物質は、さらに蛍光物質で標識される(2次反応)。この状態で、表面プラズモン共鳴が生じる角度で、プリズムを介して励起光を、金属膜に照射すると、金属膜表面上に局在場光を発生させることができる。この局在場光により、金属膜上に捕捉された被測定物質を標識する蛍光物質が選択的に励起され、蛍光物質から放出された蛍光が観察される。この測定装置では、蛍光を検出して、被測定物質の存在またはその量を測定する。このとき、測定チップから放出される自家蛍光などの影響を排除するために、2次反応を行う前に光学ブランク測定が行われる。そして、蛍光の光量の検出値(以下、単に「蛍光値」ともいう)から光学ブランク値を引いてシグナル値を算出することで、被測定物質を高精度で測定することができる。 In the measurement apparatus described in Patent Document 1, a measurement chip having a prism (transparent support), a metal film formed on the prism, and a capturing body (for example, an antibody) fixed on the metal film is used. . When a specimen containing a substance to be measured is supplied onto the metal film, the substance to be measured is captured by the capturing body (primary reaction). The captured substance to be measured is further labeled with a fluorescent substance (secondary reaction). In this state, when the metal film is irradiated with excitation light through the prism at an angle at which surface plasmon resonance occurs, localized field light can be generated on the surface of the metal film. This localized field light selectively excites the fluorescent substance that labels the substance to be measured captured on the metal film, and the fluorescence emitted from the fluorescent substance is observed. In this measuring apparatus, fluorescence is detected and the presence or amount of a substance to be measured is measured. At this time, in order to eliminate the influence of autofluorescence emitted from the measurement chip, an optical blank measurement is performed before performing the secondary reaction. The substance to be measured can be measured with high accuracy by calculating the signal value by subtracting the optical blank value from the detected value of the amount of fluorescence light (hereinafter also simply referred to as “fluorescence value”).

特開2013-053902号公報JP 2013-053902 A

 微量の被測定物質を標識する蛍光物質からの蛍光は微弱であるため、SPFSを利用した測定装置では、光電子増倍管(PMT)やアバランシェフォトダイオード(APD)などの高感度な受光センサーを使用するのが一般的である。しかし、これらの高感度な受光センサーは、微弱な光の検出には適しているものの、受光感度が温度により大きく変化するため、高精度な温度制御が必要となるという問題を有している。 Since the fluorescence from the fluorescent substance that labels a very small amount of the substance to be measured is weak, the measurement device using SPFS uses a highly sensitive light-receiving sensor such as a photomultiplier tube (PMT) or avalanche photodiode (APD). It is common to do. However, these high-sensitivity light-receiving sensors are suitable for detecting weak light, but have a problem that high-precision temperature control is required because the light-receiving sensitivity varies greatly with temperature.

 そこで、本発明者らは、温度が変化しても受光感度の変化が小さい受光センサー(例えば、フォトダイオード(PD))を使用することを検討した。本発明者らは、励起光の光源をハイパワー化(例えば、1mW/mm以上)することで、PDのように高感度でない受光センサーを用いても、SPFSを利用して微量の被測定物質を高精度に測定しうることを見出した。 Therefore, the present inventors examined using a light receiving sensor (for example, a photodiode (PD)) whose change in light receiving sensitivity is small even when the temperature changes. By increasing the power of the excitation light source (for example, 1 mW / mm 2 or more), the present inventors use SPFS to measure a small amount of light even when using a light-sensitive sensor such as a PD. It has been found that substances can be measured with high accuracy.

 しかしながら、本発明者らの予備実験によれば、ハイパワーの励起光を測定チップに照射すると、測定チップから放出される自家蛍光の光量が減衰することがわかった。このように測定チップから放出される自家蛍光の光量が減衰する場合、蛍光を測定するときの自家蛍光の光量は、光学ブランク値を測定するときの自家蛍光の光量よりも小さくなる。このため、蛍光値から光学ブランク値を引いたときに、正しいシグナル値を算出することができず、不正確に小さい値を算出してしまうこととなる。 However, according to the preliminary experiments by the present inventors, it was found that when the measurement chip is irradiated with high-power excitation light, the amount of autofluorescence emitted from the measurement chip is attenuated. In this way, when the amount of autofluorescence emitted from the measurement chip is attenuated, the amount of autofluorescence when measuring fluorescence is smaller than the amount of autofluorescence when measuring the optical blank value. For this reason, when the optical blank value is subtracted from the fluorescence value, a correct signal value cannot be calculated, and a small value is calculated inaccurately.

 以上のように、SPFSを利用した測定方法および測定装置において、ハイパワーの励起光を照射する場合、測定チップから放出される自家蛍光の光量の減衰により、被測定物質を高精度で測定することができないおそれがある。 As described above, in the measurement method and measurement apparatus using SPFS, when irradiating high-power excitation light, the substance to be measured is measured with high accuracy by the attenuation of the amount of autofluorescence emitted from the measurement chip. You may not be able to.

 本発明の第1の目的は、SPFSを利用する測定方法および測定装置であって、ハイパワーの励起光を照射する場合であっても、測定チップから放出される自家蛍光の光量の減衰による影響を低減し、高精度に被測定物質を測定することができる測定方法および測定装置を提供することである。また、本発明の第2の目的は、SPFSを利用した測定方法および測定装置で使用されうる測定チップであって、ハイパワーの励起光を照射される場合であっても、測定チップから放出される自家蛍光の光量の変動を抑制し、高精度に被測定物質を測定することができる測定チップを提供することである。 A first object of the present invention is a measurement method and a measurement apparatus using SPFS, and even when high-power excitation light is irradiated, the influence of attenuation of the amount of autofluorescence emitted from the measurement chip Is to provide a measurement method and a measurement apparatus capable of measuring a substance to be measured with high accuracy. A second object of the present invention is a measurement chip that can be used in a measurement method and a measurement apparatus using SPFS, and is emitted from the measurement chip even when irradiated with high-power excitation light. It is to provide a measuring chip capable of measuring a substance to be measured with high accuracy while suppressing fluctuations in the amount of autofluorescent light.

 上記課題を解決するため、本発明の一実施の形態に係る測定方法は、被測定物質を標識する蛍光物質が、表面プラズモン共鳴に基づく局在場光により励起されて放出した蛍光を検出して、前記被測定物質の存在または量を示すシグナル値を測定する測定方法であって、誘電体である樹脂からなるプリズムと、前記プリズムの一面上に配置された金属膜とを有する測定チップの前記プリズムに光を照射して、前記プリズムから放出される自家蛍光の光量を減衰させる第1工程と、前記第1工程の後に、前記蛍光物質が前記金属膜上に存在しない状態で、前記金属膜で表面プラズモン共鳴が発生するように、前記プリズムを通して前記金属膜に励起光を照射して、前記測定チップから放出される光を検出し、光学ブランク値を測定する第2工程と、前記第2工程の後に、前記蛍光物質で標識された前記被測定物質が前記金属膜上に存在する状態で、前記金属膜で表面プラズモン共鳴が発生するように、前記プリズムを通して前記金属膜に励起光を照射して、前記蛍光物質から放出される蛍光を検出し、蛍光値を測定する第3工程と、前記第3工程の後に、前記蛍光値から前記光学ブランク値を引いて前記シグナル値を算出する第4工程と、を含む。 In order to solve the above problems, a measurement method according to an embodiment of the present invention detects fluorescence emitted from a fluorescent substance that is labeled with a substance to be measured, excited by localized field light based on surface plasmon resonance. A measurement method for measuring a signal value indicating the presence or amount of the substance to be measured, wherein the measurement chip includes a prism made of a resin as a dielectric and a metal film disposed on one surface of the prism. A first step of irradiating the prism with light to attenuate the amount of autofluorescence emitted from the prism; and after the first step, the metal film in a state where the fluorescent material is not present on the metal film. A second step of irradiating the metal film with excitation light through the prism to detect light emitted from the measurement chip and measuring an optical blank value so that surface plasmon resonance occurs at After the second step, in the state where the substance to be measured labeled with the fluorescent material exists on the metal film, surface plasmon resonance is generated in the metal film, and the metal film is passed through the prism. A third step of irradiating excitation light to detect fluorescence emitted from the fluorescent material and measuring a fluorescence value; and after the third step, subtracting the optical blank value from the fluorescence value to obtain the signal value A fourth step of calculating.

 上記課題を解決するため、本発明の一実施の形態に係る測定装置は、誘電体である樹脂からなるプリズムと、前記プリズムの一面上に配置された金属膜とを有する測定チップが装着され、前記プリズムを通して前記金属膜に励起光を照射することで、前記金属膜上に存在する被測定物質を標識する蛍光物質を表面プラズモン共鳴に基づく局在場光により励起させ、前記蛍光物質から放出された蛍光を検出することで、前記被測定物質の存在または量を示すシグナル値を測定するための測定装置であって、前記測定チップを保持するためのホルダーと、前記プリズムから放出される自家蛍光の光量を減衰させるための光と、前記蛍光物質を励起するための励起光とを、前記ホルダーに保持された前記測定チップに照射する光照射部と、前記光照射部が前記測定チップに光を照射したときに、前記測定チップから放出される光を検出する光検出部と、前記光検出部により得られた検出値を処理する処理部と、前記光照射部および前記光検出部の動作を制御する制御部と、を有し、前記制御部は、光学ブランク値を測定するために、前記蛍光物質が前記金属膜上に存在しない状態で、前記金属膜で表面プラズモン共鳴が発生するように前記プリズムを通して前記金属膜に励起光を照射するように前記光照射部を制御するとともに、前記測定チップから放出される光を検出するように前記光検出部を制御し、前記制御部は、蛍光値を測定するために、前記蛍光物質で標識された前記被測定物質が前記金属膜上に存在する状態で、前記金属膜で表面プラズモン共鳴が発生するように、前記プリズムを通して前記金属膜に励起光を照射するように前記光照射部を制御するとともに、前記蛍光物質から放出される蛍光を検出するように前記光検出部を制御し、前記処理部は、前記蛍光値から前記光学ブランク値を引いて前記シグナル値を算出する。 In order to solve the above problems, a measuring device according to an embodiment of the present invention is equipped with a measuring chip having a prism made of resin as a dielectric and a metal film disposed on one surface of the prism, By irradiating the metal film with excitation light through the prism, a fluorescent substance that labels the substance to be measured existing on the metal film is excited by localized field light based on surface plasmon resonance, and emitted from the fluorescent substance. A measuring device for measuring a signal value indicating the presence or amount of the substance to be measured by detecting the detected fluorescence, a holder for holding the measuring chip, and autofluorescence emitted from the prism A light irradiating unit for irradiating the measurement chip held by the holder with light for attenuating the amount of light and excitation light for exciting the fluorescent material; A light detection unit that detects light emitted from the measurement chip when the irradiation unit irradiates light to the measurement chip; a processing unit that processes a detection value obtained by the light detection unit; and the light irradiation. And a control unit for controlling the operation of the light detection unit, and the control unit is configured to measure the optical blank value in a state where the fluorescent material is not present on the metal film. The light irradiator is controlled to irradiate the metal film with excitation light through the prism so that surface plasmon resonance occurs, and the light detector is configured to detect light emitted from the measurement chip. In order to measure the fluorescence value, the control unit may cause surface plasmon resonance to occur in the metal film in a state where the target substance labeled with the fluorescent substance exists on the metal film. , The light irradiation unit is controlled to irradiate the metal film with excitation light through a mechanism, and the light detection unit is controlled to detect fluorescence emitted from the fluorescent material. The signal value is calculated by subtracting the optical blank value from the value.

 上記課題を解決するため、本発明の一実施の形態に係る測定チップは、被測定物質を標識する蛍光物質が、表面プラズモン共鳴に基づく局在場光により励起されて放出した蛍光を検出して、前記被測定物質の存在または量を測定する測定方法に使用される測定チップであって、誘電体である樹脂からなるプリズムと、前記プリズムの一面上に配置された金属膜と、を有し、前記蛍光を検出する時に前記金属膜に照射する励起光と同じ照射エネルギーの光を前記プリズムに連続して2回照射したときに、前記プリズムから放出される自家蛍光の光量の減衰率が1%以下である。 In order to solve the above-described problems, a measurement chip according to an embodiment of the present invention detects fluorescence emitted from a fluorescent substance that is labeled with a substance to be measured, excited by localized field light based on surface plasmon resonance. A measuring chip used in a measuring method for measuring the presence or amount of the substance to be measured, comprising a prism made of a resin as a dielectric, and a metal film disposed on one surface of the prism The decay rate of the amount of autofluorescence emitted from the prism is 1 when the prism is irradiated twice with light having the same irradiation energy as the excitation light that irradiates the metal film when detecting the fluorescence. % Or less.

 本発明によれば、被測定物質を高感度かつ高精度に測定することができる。 According to the present invention, a substance to be measured can be measured with high sensitivity and high accuracy.

図1は、本発明の実施の形態に係る表面プラズモン励起増強蛍光測定装置の構成を示す図である。FIG. 1 is a diagram showing a configuration of a surface plasmon excitation enhanced fluorescence measuring apparatus according to an embodiment of the present invention. 図2は、表面プラズモン励起増強蛍光測定装置の動作手順の一例を示すフローチャートである。FIG. 2 is a flowchart showing an example of the operation procedure of the surface plasmon excitation enhanced fluorescence measurement apparatus. 図3Aは、測定チップのプリズムに照射された励起光の照射エネルギーと、光学ブランク値との関係を示すグラフであり、図3B、Cは、測定チップのプリズムに対するエージングの効果について説明するための概念図である。FIG. 3A is a graph showing the relationship between the irradiation energy of the excitation light applied to the prism of the measurement chip and the optical blank value. FIGS. 3B and 3C are diagrams for explaining the effect of aging on the prism of the measurement chip. It is a conceptual diagram. 図4は、測定チップの樹脂部材に照射された光の照射エネルギーと、光学ブランク値の減衰率との関係を示すグラフである。FIG. 4 is a graph showing the relationship between the irradiation energy of the light applied to the resin member of the measurement chip and the attenuation factor of the optical blank value.

 以下、本発明の実施の形態について、図面を参照して詳細に説明する。以下の説明では、本発明に係る測定装置の代表例として、表面プラズモン共鳴(SPR)を利用して、被測定物質を測定する表面プラズモン励起増強蛍光測定装置(以下、「SPFS装置」ともいう)について説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, as a representative example of the measurement apparatus according to the present invention, a surface plasmon excitation enhanced fluorescence measurement apparatus (hereinafter also referred to as “SPFS apparatus”) that measures a substance to be measured using surface plasmon resonance (SPR). Will be described.

 [実施の形態1]
 実施の形態1では、エージングされていない樹脂部材を有する測定チップを使用して、被測定物質の測定を行う測定装置および測定方法について説明する。ここで、「エージング」とは、樹脂部材に光を照射して、樹脂部材から放出される自家蛍光の光量を意図的に減衰させることをいう。
[Embodiment 1]
In Embodiment 1, a measurement apparatus and a measurement method for measuring a substance to be measured using a measurement chip having a resin member that is not aged will be described. Here, “aging” means that the resin member is irradiated with light to intentionally attenuate the amount of autofluorescence emitted from the resin member.

 図1は、実施の形態1に係るSPFS装置100の構成を示す図である。図1に示されるように、SPFS装置100は、測定チップ10を着脱可能に保持するためのチップホルダー110と、測定チップ10に光を照射するための光照射ユニット(光照射部)120と、測定チップ10から放出された光(自家蛍光、プラズモン散乱光βまたは蛍光γ)を検出するための受光ユニット(光検出部)130と、これらを制御する制御部(処理部)140と、測定チップ10に送液するための送液ユニット(不図示)とを有する。SPFS装置100は、チップホルダー110に測定チップ10を装着した状態で使用される。そこで、測定チップ10について先に説明し、その後にSPFS装置100の各構成要素について説明する。 FIG. 1 is a diagram illustrating a configuration of the SPFS apparatus 100 according to the first embodiment. As shown in FIG. 1, the SPFS device 100 includes a chip holder 110 for detachably holding the measurement chip 10, a light irradiation unit (light irradiation unit) 120 for irradiating the measurement chip 10 with light, A light receiving unit (light detection unit) 130 for detecting light (autofluorescence, plasmon scattered light β or fluorescence γ) emitted from the measurement chip 10, a control unit (processing unit) 140 for controlling these, and a measurement chip 10 and a liquid feeding unit (not shown) for feeding liquid. The SPFS device 100 is used with the measurement chip 10 mounted on the chip holder 110. Therefore, the measurement chip 10 will be described first, and then each component of the SPFS device 100 will be described.

 (測定チップの構成)
 図1に示されるように、測定チップ10は、入射面21、成膜面22および出射面23を有するプリズム20と、成膜面22上に形成された金属膜30と、成膜面22上または金属膜30上に配置された流路蓋40とを有する。通常、測定チップ10は、測定(分析)のたびに交換される。
(Configuration of measuring chip)
As shown in FIG. 1, the measuring chip 10 includes a prism 20 having an incident surface 21, a film formation surface 22 and an emission surface 23, a metal film 30 formed on the film formation surface 22, and a film formation surface 22. Alternatively, a flow path lid 40 disposed on the metal film 30 is included. Usually, the measuring chip 10 is replaced for each measurement (analysis).

 プリズム20は、励起光αに対して透明であり、誘電体である樹脂からなる。プリズム20は、入射面21、成膜面22および出射面23を有する。 The prism 20 is transparent to the excitation light α and is made of a resin that is a dielectric. The prism 20 has an incident surface 21, a film forming surface 22, and an exit surface 23.

 入射面21は、光照射ユニット120からの励起光αをプリズム20の内部に入射させる。成膜面22の上には、金属膜30が配置されている。プリズム20の内部に入射した励起光αは、金属膜30で反射する。より具体的には、プリズム20と金属膜30との界面(成膜面22)で反射する。出射面23は、金属膜30で反射した励起光αをプリズム20の外部に出射させる。 The incident surface 21 causes the excitation light α from the light irradiation unit 120 to enter the prism 20. A metal film 30 is disposed on the film formation surface 22. The excitation light α incident on the inside of the prism 20 is reflected by the metal film 30. More specifically, the light is reflected at the interface (deposition surface 22) between the prism 20 and the metal film 30. The emission surface 23 emits the excitation light α reflected by the metal film 30 to the outside of the prism 20.

 プリズム20の形状は、特に限定されない。本実施の形態では、プリズム20の形状は、台形を底面とする柱体である。台形の一方の底辺に対応する面が成膜面22であり、一方の脚に対応する面が入射面21であり、他方の脚に対応する面が出射面23である。底面となる台形は、等脚台形であることが好ましい。これにより、入射面21と出射面23とが対称になり、励起光αのS波成分がプリズム20内に滞留しにくくなる。入射面21は、励起光αが光照射ユニット120に戻らないように形成されている。励起光αが励起光源であるレーザーダイオードに戻ると、レーザーダイオードの励起状態が乱れてしまい、励起光αの波長や出力が変動してしまうからである。そこで、理想的な共鳴角または増強角を中心とする走査範囲において、励起光αが入射面21に垂直に入射しないように、入射面21の角度が設定される。 The shape of the prism 20 is not particularly limited. In the present embodiment, the shape of the prism 20 is a column having a trapezoidal bottom surface. The surface corresponding to one base of the trapezoid is the film formation surface 22, the surface corresponding to one leg is the incident surface 21, and the surface corresponding to the other leg is the emission surface 23. The trapezoid serving as the bottom surface is preferably an isosceles trapezoid. Thereby, the entrance surface 21 and the exit surface 23 are symmetric, and the S wave component of the excitation light α is less likely to stay in the prism 20. The incident surface 21 is formed so that the excitation light α does not return to the light irradiation unit 120. This is because when the excitation light α returns to the laser diode that is the excitation light source, the excitation state of the laser diode is disturbed, and the wavelength and output of the excitation light α change. Therefore, the angle of the incident surface 21 is set so that the excitation light α does not enter the incident surface 21 perpendicularly in a scanning range centered on an ideal resonance angle or enhancement angle.

 ここで「共鳴角」とは、金属膜30に対する励起光αの入射角を走査した場合に、出射面23から出射される反射光の光量が最小となるときの、入射角を意味する。また、「増強角」とは、金属膜30に対する励起光αの入射角を走査した場合に、測定チップ10の上方に放出される励起光αと同一波長の散乱光(以下「プラズモン散乱光」という)βの光量が最大となるときの、入射角を意味する。たとえば、入射面21と成膜面22との角度および成膜面22と出射面23との角度は、いずれも約80°である。 Here, the “resonance angle” means an incident angle when the amount of reflected light emitted from the emission surface 23 is minimized when the incident angle of the excitation light α with respect to the metal film 30 is scanned. The “enhancement angle” refers to scattered light having the same wavelength as the excitation light α emitted above the measurement chip 10 when the incident angle of the excitation light α with respect to the metal film 30 is scanned (hereinafter referred to as “plasmon scattered light”). This means the angle of incidence when the light quantity of β is maximized. For example, the angle between the incident surface 21 and the film formation surface 22 and the angle between the film formation surface 22 and the emission surface 23 are both about 80 °.

 プリズム20を構成する樹脂の例には、ポリメタクリル酸メチル(PMMA)や、ポリカーボネート(PC)、シクロオレフィン系ポリマーなどが含まれる。プリズム20を構成する樹脂は、好ましくは、屈折率が1.4~1.6であり、かつ複屈折が小さい樹脂である。このように樹脂(組成物)を用いてプリズム20を形成した場合、通常、プリズム20は、光を照射されたときに自家蛍光を放出する。 Examples of the resin constituting the prism 20 include polymethyl methacrylate (PMMA), polycarbonate (PC), cycloolefin-based polymer, and the like. The resin constituting the prism 20 is preferably a resin having a refractive index of 1.4 to 1.6 and a small birefringence. When the prism 20 is formed using the resin (composition) as described above, the prism 20 usually emits autofluorescence when irradiated with light.

 金属膜30は、プリズム20の成膜面22上に形成されている。金属膜30を設けることで、成膜面22に全反射条件で入射した励起光αの光子と、金属膜30中の自由電子との間で相互作用(表面プラズモン共鳴;SPR)が生じ、金属膜30の表面上に局在場光を生じさせることができる。金属膜30の素材は、表面プラズモン共鳴を生じさせる金属であれば特に限定されない。金属膜30の素材の例には、金、銀、銅、アルミニウム、これらの合金が含まれる。本実施の形態では、金属膜30は、金薄膜である。金属膜30の形成方法は、特に限定されない。金属膜30の形成方法の例には、スパッタリング、蒸着、メッキが含まれる。金属膜30の厚みは、特に限定されないが、30~70nmの範囲内が好ましい。 The metal film 30 is formed on the film formation surface 22 of the prism 20. By providing the metal film 30, an interaction (surface plasmon resonance; SPR) occurs between the photon of the excitation light α incident on the film formation surface 22 under total reflection conditions and the free electrons in the metal film 30. Local field light can be generated on the surface of the film 30. The material of the metal film 30 is not particularly limited as long as it is a metal that causes surface plasmon resonance. Examples of the material of the metal film 30 include gold, silver, copper, aluminum, and alloys thereof. In the present embodiment, the metal film 30 is a gold thin film. The method for forming the metal film 30 is not particularly limited. Examples of the method for forming the metal film 30 include sputtering, vapor deposition, and plating. The thickness of the metal film 30 is not particularly limited, but is preferably in the range of 30 to 70 nm.

 また、特に図示しないが、金属膜30のプリズム20と対向しない面には、被測定物質を捕捉するための捕捉体が固定されている。捕捉体を固定することで、被測定物質を選択的に測定することが可能となる。このように金属膜30の表面の少なくとも一部は、反応場として設定される。本実施の形態では、金属膜30表面の中央部分が反応場として設定されている。反応場には、捕捉体が均一に固定されている。捕捉体の種類は、被測定物質を捕捉することができれば特に限定されない。たとえば、捕捉体は、被測定物質に特異的に結合可能な抗体またはその断片である。 Although not particularly shown, a capturing body for capturing the substance to be measured is fixed to the surface of the metal film 30 that does not face the prism 20. By fixing the capturing body, it becomes possible to selectively measure the substance to be measured. Thus, at least a part of the surface of the metal film 30 is set as a reaction field. In the present embodiment, the central portion of the surface of the metal film 30 is set as the reaction field. A trap is uniformly fixed in the reaction field. The type of the capturing body is not particularly limited as long as the substance to be measured can be captured. For example, the capturing body is an antibody or a fragment thereof that can specifically bind to the substance to be measured.

 流路蓋40は、金属膜30のプリズム20と対向しない面上に、流路41を挟んで配置されている。流路蓋40は、流路41を挟んで成膜面22上に配置されていてもよい。流路蓋40は、金属膜30(およびプリズム20)とともに、検体や蛍光標識液、洗浄液などの液体が流れる流路41を形成する。反応場は、流路41内に露出している。流路41の両端は、流路蓋40の上面に形成された注入口および排出口(いずれも図示省略)とそれぞれ接続されている。流路41内へ液体が注入されると、流路41内において、これらの液体は反応場の捕捉体に接触する。 The channel lid 40 is disposed on the surface of the metal film 30 that does not face the prism 20 with the channel 41 interposed therebetween. The channel lid 40 may be disposed on the film formation surface 22 with the channel 41 interposed therebetween. The flow path lid 40 and the metal film 30 (and the prism 20) form a flow path 41 through which a liquid such as a specimen, a fluorescent labeling liquid, and a cleaning liquid flows. The reaction field is exposed in the flow path 41. Both ends of the channel 41 are connected to an inlet and an outlet (both not shown) formed on the upper surface of the channel lid 40, respectively. When liquids are injected into the channel 41, these liquids contact the reaction field capturing body in the channel 41.

 流路蓋40は、金属膜30の反応場から放出された光(プラズモン散乱光βおよび蛍光γ)に対して透明な材料からなる樹脂部材である。流路蓋40の材料は、これらの光に対して透明であれば特に限定されない。これらの光を受光ユニット130に導くことができれば、流路蓋40の一部は、不透明な材料で形成されていてもよい。流路蓋40は、例えば、両面テープまたは接着剤による接着や、レーザー溶着、超音波溶着、クランプ部材を用いた圧着などにより金属膜30またはプリズム20に接合されている。 The channel lid 40 is a resin member made of a material that is transparent to light (plasmon scattered light β and fluorescence γ) emitted from the reaction field of the metal film 30. The material of the channel lid 40 is not particularly limited as long as it is transparent to these lights. As long as these lights can be guided to the light receiving unit 130, a part of the flow path lid 40 may be formed of an opaque material. The channel lid 40 is bonded to the metal film 30 or the prism 20 by, for example, adhesion using a double-sided tape or an adhesive, laser welding, ultrasonic welding, or pressure bonding using a clamp member.

 なお、測定チップ10の設計により、共鳴角(およびその極近傍にある増強角)が概ね決まる。設計要素は、プリズム20の屈折率や、金属膜30の屈折率、金属膜30の膜厚、金属膜30の消衰係数、励起光αの波長などである。金属膜30上に捕捉された被測定物質によって共鳴角および増強角がシフトするが、その量は数度未満である。 Note that the resonance angle (and the enhancement angle near the pole) is generally determined by the design of the measurement chip 10. The design factors are the refractive index of the prism 20, the refractive index of the metal film 30, the film thickness of the metal film 30, the extinction coefficient of the metal film 30, the wavelength of the excitation light α, and the like. The resonance angle and the enhancement angle are shifted by the substance to be measured trapped on the metal film 30, but the amount is less than several degrees.

 図1に示されるように、プリズム20へ導かれた励起光αは、入射面21でプリズム20内に入射する。プリズム20内に入射した励起光αは、プリズム20と金属膜30との界面(成膜面22)に全反射角度(表面プラズモン共鳴が生じる角度)となるように入射する。上記の界面からの反射光は、出射面23でプリズム20外に出射される(図示省略)。このとき、励起光αがプリズムを通過することによって、プリズム20内の励起光αの光路となる領域からは、自家蛍光が放出される。この自家蛍光の一部は、金属膜30および流路蓋40を透過して受光ユニット130の方向に向かう。また、表面プラズモン共鳴が生じる角度で励起光αが上記の界面に入射することで、反応場からは、プラズモン散乱光βや蛍光γなどが、受光ユニット130の方向へ放出される。 As shown in FIG. 1, the excitation light α guided to the prism 20 enters the prism 20 through the incident surface 21. The excitation light α incident on the prism 20 is incident on the interface (deposition surface 22) between the prism 20 and the metal film 30 so as to have a total reflection angle (an angle at which surface plasmon resonance occurs). The reflected light from the interface is emitted from the prism 20 on the emission surface 23 (not shown). At this time, when the excitation light α passes through the prism, autofluorescence is emitted from the region that is the optical path of the excitation light α in the prism 20. Part of the autofluorescence passes through the metal film 30 and the flow path lid 40 and travels toward the light receiving unit 130. In addition, when the excitation light α is incident on the above-described interface at an angle at which surface plasmon resonance occurs, plasmon scattered light β and fluorescence γ are emitted from the reaction field toward the light receiving unit 130.

 (SPFS装置の構成)
 次に、SPFS装置100の各構成要素について説明する。前述のとおり、SPFS装置100は、チップホルダー110、光照射ユニット(光照射部)120、受光ユニット(光検出部)130および制御部(処理部)140を有する。
(Configuration of SPFS device)
Next, each component of the SPFS device 100 will be described. As described above, the SPFS device 100 includes the chip holder 110, the light irradiation unit (light irradiation unit) 120, the light receiving unit (light detection unit) 130, and the control unit (processing unit) 140.

 チップホルダー110は、所定の位置で測定チップ10を保持する。測定チップ10は、チップホルダー110に保持された状態で、光照射ユニット120からの励起光αを照射される。 The chip holder 110 holds the measurement chip 10 at a predetermined position. The measurement chip 10 is irradiated with the excitation light α from the light irradiation unit 120 while being held by the chip holder 110.

 光照射ユニット120は、チップホルダー110に保持された測定チップ10に向けて、測定チップ10をエージングするための光(以下「エージング光」という)と、励起光α(シングルモードレーザー光)とを照射する。より具体的には、光源ユニット121は、測定チップ10のプリズム20側から捕捉体が固定されている領域に対応した金属膜30の裏面に、励起光αを全反射角度となるように照射する。また、光源ユニット121は、少なくともプリズム20内における励起光αの光路と重複するように、プリズム20にエージング光を照射する。 The light irradiation unit 120 emits light for aging the measurement chip 10 (hereinafter referred to as “aging light”) and excitation light α (single mode laser light) toward the measurement chip 10 held by the chip holder 110. Irradiate. More specifically, the light source unit 121 irradiates the back surface of the metal film 30 corresponding to the region where the capturing body is fixed from the prism 20 side of the measuring chip 10 with the excitation light α at a total reflection angle. . The light source unit 121 irradiates the prism 20 with aging light so as to overlap at least the optical path of the excitation light α in the prism 20.

 光照射ユニット120は、励起光αを出射する光源ユニット121と、プリズム20と金属膜30との界面(成膜面22)に対する励起光αの入射角を調整する角度調整部122と、光源ユニット121に含まれる各種機器を制御する光源制御部123とを有する。 The light irradiation unit 120 includes a light source unit 121 that emits excitation light α, an angle adjustment unit 122 that adjusts the incident angle of the excitation light α with respect to the interface (deposition surface 22) between the prism 20 and the metal film 30, and a light source unit. And a light source control unit 123 that controls various devices included in the device 121.

 光源ユニット121は、エージング光と、励起光αとを出射する。たとえば、光源ユニット121は、エージング光の光源、励起光αの光源、ビーム整形光学系、APC機構および温度調整機構(いずれも図示省略)を有する。 The light source unit 121 emits aging light and excitation light α. For example, the light source unit 121 includes an aging light source, an excitation light α light source, a beam shaping optical system, an APC mechanism, and a temperature adjustment mechanism (all not shown).

 エージング光の光源の種類は、特に限定されないが、エージングを効率的に行う観点からは、励起光αと同じ波長の光を出射可能なハイパワーの光源であることが好ましい。また、励起光αの光源の種類も、特に限定されないが、受光センサー135としてフォトダイオード(PD)などの高感度でない光検出器を使用する観点からは、ハイパワーの光源であることが好ましい。本実施の形態では、励起光αの光源は、エージング光の光源を兼ねており、励起光αの中心波長とエージング光の中心波長は同一である。励起光αおよびエージング光の光源は、例えばレーザーダイオード(LD)である。光源の種類の他の例には、発光ダイオード、水銀灯、その他のレーザー光源が含まれる。たとえば、光源の発光パワーは、1mW/mm以上である。なお、エージング光の光源と、励起光αの光源とは、異なっていてもよい。 The type of the light source for aging light is not particularly limited, but from the viewpoint of efficiently performing aging, it is preferably a high power light source capable of emitting light having the same wavelength as that of the excitation light α. Also, the type of the light source of the excitation light α is not particularly limited, but from the viewpoint of using a light-sensitive sensor such as a photodiode (PD) as the light receiving sensor 135, a high-power light source is preferable. In the present embodiment, the light source of the excitation light α also serves as the light source of aging light, and the central wavelength of the excitation light α and the central wavelength of the aging light are the same. The light source of the excitation light α and aging light is, for example, a laser diode (LD). Other examples of light source types include light emitting diodes, mercury lamps, and other laser light sources. For example, the light emission power of the light source is 1 mW / mm 2 or more. The light source of aging light and the light source of excitation light α may be different.

 励起光αの光源から出射される励起光αがビームでない場合は、励起光αの光源から出射される励起光αは、レンズや鏡、スリットなどによりビームに変換される。また、励起光αの光源から出射される励起光αが単色光でない場合は、励起光αの光源から出射される励起光αは、回折格子などにより単色光に変換される。さらに、励起光αの光源から出射される励起光αが直線偏光でない場合は、励起光αの光源から出射される励起光αは、偏光子などにより直線偏光の光に変換される。 When the excitation light α emitted from the light source of the excitation light α is not a beam, the excitation light α emitted from the light source of the excitation light α is converted into a beam by a lens, a mirror, a slit, or the like. When the excitation light α emitted from the light source of the excitation light α is not monochromatic light, the excitation light α emitted from the light source of the excitation light α is converted into monochromatic light by a diffraction grating or the like. Further, when the excitation light α emitted from the light source of the excitation light α is not linearly polarized light, the excitation light α emitted from the light source of the excitation light α is converted into linearly polarized light by a polarizer or the like.

 ビーム整形光学系は、例えば、コリメーターやバンドパスフィルター、直線偏光フィルター、半波長板、スリット、ズーム手段などを含む。ビーム整形光学系は、これらのすべてを含んでいてもよいし、一部を含んでいてもよい。 The beam shaping optical system includes, for example, a collimator, a band pass filter, a linear polarization filter, a half-wave plate, a slit, and a zoom means. The beam shaping optical system may include all of these or a part thereof.

 コリメーターは、励起光αの光源から出射された励起光αをコリメートする。 The collimator collimates the excitation light α emitted from the light source of the excitation light α.

 バンドパスフィルターは、励起光αの光源から出射された励起光αを中心波長のみの狭帯域光にする。励起光αの光源からの励起光αは、若干の波長分布幅を有しているためである。 The band-pass filter turns the excitation light α emitted from the light source of the excitation light α into narrowband light having only the center wavelength. This is because the excitation light α from the light source of the excitation light α has a slight wavelength distribution width.

 直線偏光フィルターは、励起光αの光源から出射された励起光αを完全な直線偏光の光にする。半波長板は、金属膜30にP波成分の光が入射するように励起光αの偏光方向を調整する。スリットおよびズーム手段は、金属膜30の裏面における照射スポットの形状が所定サイズの円形となるように、励起光αのビーム径や輪郭形状などを調整する。 The linear polarization filter turns the excitation light α emitted from the light source of the excitation light α into completely linearly polarized light. The half-wave plate adjusts the polarization direction of the excitation light α so that the P-wave component light is incident on the metal film 30. The slit and zoom means adjust the beam diameter, contour shape, and the like of the excitation light α so that the shape of the irradiation spot on the back surface of the metal film 30 is a circle of a predetermined size.

 APC機構は、励起光αの光源の出力が一定となるように励起光αの光源を制御する。より具体的には、APC機構は、励起光αから分岐させた光の光量を不図示のフォトダイオードなどで検出する。そして、APC機構は、回帰回路で投入エネルギーを制御することで、励起光αの光源の出力を一定に制御する。 The APC mechanism controls the light source of the excitation light α so that the output of the light source of the excitation light α is constant. More specifically, the APC mechanism detects the amount of light branched from the excitation light α with a photodiode (not shown) or the like. Then, the APC mechanism controls the input energy by the regression circuit, thereby controlling the output of the light source of the excitation light α to be constant.

 温度調整機構は、例えば、ヒーターやペルチェ素子などである。励起光αの光源の出射光の波長およびエネルギーは、温度によって変動することがある。このため、温度調整機構で光源の温度を一定に保つことにより、光源の出射光の波長およびエネルギーを一定に制御する。 The temperature adjustment mechanism is, for example, a heater or a Peltier element. The wavelength and energy of the light emitted from the light source of the excitation light α may vary depending on the temperature. For this reason, the wavelength and energy of the light emitted from the light source are controlled to be constant by keeping the temperature of the light source constant by the temperature adjusting mechanism.

 角度調整部122は、金属膜30(プリズム20と金属膜30との界面(成膜面22))への励起光αおよびエージング光の入射角を調整する。角度調整部122は、励起光αおよびエージング光を金属膜30(成膜面22)の所定の位置(反応場の裏側)に所定の入射角で照射させるために、励起光αの光軸とチップホルダー110とを相対的に回転させる。本実施の形態では、角度調整部122は、金属膜30上において励起光αの光軸と直交する軸(図1の紙面に対して垂直な軸)を中心として光源ユニット121を回転させる。このとき、入射角を走査しても金属膜30(成膜面22)上での照射位置がほとんど移動しないように、回転軸の位置を設定する。たとえば、回転中心の位置を、入射角の走査範囲の両端における2つの励起光αの光軸の交点近傍(成膜面22上の照射位置とプリズム20の入射面21との間)に設定することで、照射位置のズレを極小化することができる。 The angle adjusting unit 122 adjusts the incident angles of the excitation light α and the aging light to the metal film 30 (the interface between the prism 20 and the metal film 30 (film formation surface 22)). The angle adjusting unit 122 is configured to irradiate the excitation light α and the aging light at a predetermined incident angle on the metal film 30 (deposition surface 22) with a predetermined incident angle. The tip holder 110 is rotated relatively. In the present embodiment, the angle adjustment unit 122 rotates the light source unit 121 around an axis (axis perpendicular to the paper surface of FIG. 1) orthogonal to the optical axis of the excitation light α on the metal film 30. At this time, the position of the rotation axis is set so that the irradiation position on the metal film 30 (deposition surface 22) hardly moves even when the incident angle is scanned. For example, the position of the rotation center is set near the intersection of the optical axes of the two excitation lights α at both ends of the scanning range of the incident angle (between the irradiation position on the film forming surface 22 and the incident surface 21 of the prism 20). Thus, the deviation of the irradiation position can be minimized.

 光源制御部123は、光源ユニット121に含まれる各種機器を制御して、光源ユニット121からの励起光αおよびエージング光のパワーや照射時間などを調整する。光源制御部123は、例えば、演算装置、制御装置、記憶装置、入力装置および出力装置を含む公知のコンピュータやマイコンなどによって構成される。 The light source control unit 123 controls various devices included in the light source unit 121 to adjust the power and irradiation time of the excitation light α and the aging light from the light source unit 121. The light source control unit 123 includes, for example, a known computer or microcomputer including an arithmetic device, a control device, a storage device, an input device, and an output device.

 受光ユニット130は、チップホルダー110に保持された測定チップ10の金属膜30のプリズム20と対向しない面に対向するように配置されている。受光ユニット130は、測定チップ10から放出される自家蛍光と、金属膜30上から出射される光(プラズモン散乱光βまたは蛍光γ)とを検出する。受光ユニット130は、受光光学系ユニット131に配置された第1レンズ132、光学フィルター133、第2レンズ134および受光センサー135と、位置切替え機構136と、光センサー制御部137とを有する。 The light receiving unit 130 is disposed so as to face the surface of the metal film 30 of the measurement chip 10 held by the chip holder 110 that does not face the prism 20. The light receiving unit 130 detects autofluorescence emitted from the measurement chip 10 and light (plasmon scattered light β or fluorescence γ) emitted from the metal film 30. The light receiving unit 130 includes a first lens 132, an optical filter 133, a second lens 134, and a light receiving sensor 135 disposed in the light receiving optical system unit 131, a position switching mechanism 136, and an optical sensor control unit 137.

 第1レンズ132は、例えば、集光レンズであり、金属膜30上から出射される光を集光する。第2レンズ134は、例えば、結像レンズであり、第1レンズ132で集光された光を受光センサー135の受光面に結像させる。両レンズの間では、光は、略平行光束となっている。 The first lens 132 is, for example, a condensing lens, and condenses light emitted from the metal film 30. The second lens 134 is, for example, an imaging lens, and forms an image of the light collected by the first lens 132 on the light receiving surface of the light receiving sensor 135. Between both lenses, the light is a substantially parallel light beam.

 光学フィルター133は、第1レンズ132と第2レンズ134との間に配置されている。光学フィルター133は、蛍光成分のみを受光センサー135に導き、高いS/N比で蛍光γを検出するために、励起光成分(プラズモン散乱光β)を除去する。光学フィルター133の例には、励起光反射フィルター、短波長カットフィルターおよびバンドパスフィルターが含まれる。光学フィルター133は、例えば、所定の光成分を反射する多層膜を含むフィルター、または所定の光成分を吸収する色ガラスフィルターである。 The optical filter 133 is disposed between the first lens 132 and the second lens 134. The optical filter 133 removes the excitation light component (plasmon scattered light β) in order to guide only the fluorescence component to the light receiving sensor 135 and detect the fluorescence γ with a high S / N ratio. Examples of the optical filter 133 include an excitation light reflection filter, a short wavelength cut filter, and a band pass filter. The optical filter 133 is, for example, a filter including a multilayer film that reflects a predetermined light component, or a color glass filter that absorbs a predetermined light component.

 受光センサー135は、測定チップ10から放出される自家蛍光、プラズモン散乱光βおよび蛍光γを検出する。受光センサー135の種類は、上記の目的を達成することができれば特に限定されないが、受光量が増加しても測定値のばらつきが小さいもの、および温度変化による特性の変化が小さいものが好ましい。受光センサー135は、例えば、フォトダイオード(PD)である。前述のように、本発明者らは、励起光αの光源をハイパワー化(例えば、1mW/mm以上)することで、PDのように高感度でない受光センサー135を用いても、SPFSを利用することで微量の被測定物質を高精度に測定しうることを確認している。 The light receiving sensor 135 detects autofluorescence, plasmon scattered light β and fluorescence γ emitted from the measurement chip 10. The type of the light receiving sensor 135 is not particularly limited as long as the above object can be achieved. However, it is preferable that the variation in measured values is small even when the amount of received light is increased, and that the change in characteristics due to a temperature change is small. The light receiving sensor 135 is, for example, a photodiode (PD). As described above, the present inventors increase the power of the light source of the excitation light α (for example, 1 mW / mm 2 or more), so that the SPFS can be used even when the light receiving sensor 135 that is not highly sensitive like PD is used. It has been confirmed that it is possible to measure a very small amount of a substance to be measured with high accuracy.

 位置切替え機構136は、光学フィルター133の位置を、受光光学系ユニット131における光路上または光路外に切り替える。具体的には、受光センサー135が光学ブランク値または蛍光値を測定する時には、光学フィルター133を受光光学系ユニット131における光路上に配置し、受光センサー135がプラズモン散乱光βを検出する時には、光学フィルター133を光路外に配置する。 The position switching mechanism 136 switches the position of the optical filter 133 on or off the optical path in the light receiving optical system unit 131. Specifically, when the light receiving sensor 135 measures the optical blank value or the fluorescence value, the optical filter 133 is disposed on the optical path in the light receiving optical system unit 131, and when the light receiving sensor 135 detects the plasmon scattered light β, the optical filter 133 is optical. A filter 133 is disposed outside the optical path.

 光センサー制御部137は、受光センサー135の出力値の検出や、検出した出力値による受光センサー135の感度の管理、適切な出力値を得るための受光センサー135の感度を制御する。光センサー制御部137は、例えば、演算装置、制御装置、記憶装置、入力装置および出力装置を含む公知のコンピュータやマイコンなどによって構成される。 The light sensor control unit 137 detects the output value of the light receiving sensor 135, manages the sensitivity of the light receiving sensor 135 based on the detected output value, and controls the sensitivity of the light receiving sensor 135 to obtain an appropriate output value. The optical sensor control unit 137 includes, for example, a known computer or microcomputer including an arithmetic device, a control device, a storage device, an input device, and an output device.

 制御部140は、角度調整部122、光源制御部123、位置切替え機構136および光センサー制御部137を制御する。また、制御部140は、受光センサー135の検出結果に基づいて被測定物質の存在または量を示すシグナル値を算出するための処理部としても機能する。制御部140は、例えば、演算装置、制御装置、記憶装置、入力装置および出力装置を含む公知のコンピュータやマイコンなどによって構成される。 The control unit 140 controls the angle adjustment unit 122, the light source control unit 123, the position switching mechanism 136, and the optical sensor control unit 137. The control unit 140 also functions as a processing unit for calculating a signal value indicating the presence or amount of the substance to be measured based on the detection result of the light receiving sensor 135. The control unit 140 includes, for example, a known computer or microcomputer including an arithmetic device, a control device, a storage device, an input device, and an output device.

 (SPFS装置の動作)
 次に、SPFS装置100の動作(SPFS装置100を用いた測定方法)について説明する。図2は、SPFS装置の動作手順の一例を示すフローチャートである。
(Operation of SPFS device)
Next, the operation of the SPFS apparatus 100 (measurement method using the SPFS apparatus 100) will be described. FIG. 2 is a flowchart illustrating an example of an operation procedure of the SPFS apparatus.

 まず、測定の準備をする(工程S10)。具体的には、SPFS装置100のチップホルダー110に測定チップ10を設置する。また、測定チップ10の流路41内に保湿剤が存在する場合は、捕捉体が適切に被測定物質を捕捉できるように、流路41内を洗浄して保湿剤を除去する。 First, preparation for measurement is performed (step S10). Specifically, the measurement chip 10 is installed in the chip holder 110 of the SPFS device 100. Further, when a humectant is present in the flow channel 41 of the measurement chip 10, the humectant is removed by washing the flow channel 41 so that the capturing body can appropriately capture the substance to be measured.

 次いで、増強角を測定する(工程S20)。具体的には、励起光αを金属膜30(成膜面22)の所定の位置に照射しながら、金属膜30(成膜面22)に対する励起光αの入射角を走査して、最適な入射角を決定する。制御部140は、光源制御部123および角度調整部122を制御して、光源ユニット121から励起光αを金属膜30(成膜面22)の所定の位置に照射しながら、金属膜30(成膜面22)に対する励起光αの入射角を走査する。また、制御部140は、位置切替え機構136を制御して、光学フィルター133を受光光学系ユニット131の光路外に移動させる。これとともに、制御部140は、光センサー制御部137を制御して、受光センサー135でプラズモン散乱光βを検出する。制御部140は、励起光αの入射角とプラズモン散乱光βの強度との関係を含むデータを得る。そして、制御部140は、データを解析して、プラズモン散乱光βの強度が最大となる入射角(増強角)を決定する。なお、増強角は、プリズム20の素材および形状、金属膜30の厚み、流路41内の液体の屈折率などにより決まるが、流路41内の捕捉体の種類および量、プリズム20の形状誤差などの各種要因によりわずかに変動する。このため、測定を行うたびに増強角を決定することが好ましい。増強角は、0.1°程度のオーダーで決定される。 Next, the enhancement angle is measured (step S20). Specifically, the irradiation angle of the excitation light α with respect to the metal film 30 (deposition surface 22) is scanned while irradiating the predetermined position of the metal film 30 (deposition surface 22) with the excitation light α, and the optimum Determine the angle of incidence. The control unit 140 controls the light source control unit 123 and the angle adjustment unit 122 to irradiate the excitation light α from the light source unit 121 to a predetermined position of the metal film 30 (deposition surface 22), while forming the metal film 30 (the formation film). The incident angle of the excitation light α with respect to the film surface 22) is scanned. Further, the control unit 140 controls the position switching mechanism 136 to move the optical filter 133 out of the optical path of the light receiving optical system unit 131. At the same time, the control unit 140 controls the optical sensor control unit 137 so that the light receiving sensor 135 detects the plasmon scattered light β. The control unit 140 obtains data including the relationship between the incident angle of the excitation light α and the intensity of the plasmon scattered light β. Then, the control unit 140 analyzes the data and determines an incident angle (enhancement angle) that maximizes the intensity of the plasmon scattered light β. The enhancement angle is determined by the material and shape of the prism 20, the thickness of the metal film 30, the refractive index of the liquid in the flow channel 41, etc. It varies slightly due to various factors such as. For this reason, it is preferable to determine the enhancement angle every time measurement is performed. The enhancement angle is determined on the order of about 0.1 °.

 次いで、金属膜30(成膜面22)に対する励起光αの入射角を、工程S20で決定した増強角に設定する(工程S30)。具体的には、制御部140は、角度調整部122を制御して、金属膜30(成膜面22)に対する励起光αの入射角を増強角に設定する。本実施の形態では、エージング光の光源と励起光αの光源が同一であり、プリズム20内におけるエージング光および励起光αの光路は同一である。したがって、この工程により、プリズム20内におけるエージング光の光路も設定される。以後の工程では、金属膜30(成膜面22)に対する励起光αの入射角は、増強角のままである。 Next, the incident angle of the excitation light α with respect to the metal film 30 (deposition surface 22) is set to the enhancement angle determined in step S20 (step S30). Specifically, the control unit 140 controls the angle adjustment unit 122 to set the incident angle of the excitation light α with respect to the metal film 30 (deposition surface 22) as an enhancement angle. In the present embodiment, the light source of the aging light and the light source of the excitation light α are the same, and the optical paths of the aging light and the excitation light α in the prism 20 are the same. Therefore, the optical path of the aging light in the prism 20 is also set by this process. In the subsequent steps, the incident angle of the excitation light α with respect to the metal film 30 (deposition surface 22) remains the enhancement angle.

 次いで、測定チップ10をエージングする(工程S40)。制御部140は、光学ブランク値の測定(工程S50)および蛍光値の測定(工程S80)より前に、プリズム20から放出される自家蛍光の光量を減衰させるために、プリズム20に自家蛍光の光量を減衰させるための光を照射するように光照射ユニット120を制御する。具体的には、制御部140は、光源制御部123を制御して、光源ユニット121からエージング光を測定チップ10の樹脂部材(プリズム20)に照射する。これにより、少なくともプリズム20内における励起光αの光路を含む領域において、樹脂部材から放出される自家蛍光の光量を減衰させることができる。より高精度の測定を行う観点からは、制御部140は、プリズム20から放出される自家蛍光の光量の減衰率Aが下記の式(1)を満たすまで、プリズム20に自家蛍光の光量を減衰させるための光を照射するように光照射ユニット120を制御することが好ましい。すなわち、励起光αの光路上の樹脂から放出される自家蛍光の光量の減衰率Aが下記の式(1)を満たすまで測定チップ10のエージングを行うことが好ましい。

Figure JPOXMLDOC01-appb-M000004
 [式(1)において、S1は後述のシグナル値であり、OBは後述の光学ブランク値であり、Bは許容可能な測定誤差の上限値(%)である。Bは、以下の式(2)により算出される。]
 [式(2)において、S1は後述のシグナル値であり、S2は、後述の真のシグナル値である。] Next, the measurement chip 10 is aged (step S40). Prior to the measurement of the optical blank value (step S50) and the measurement of the fluorescence value (step S80), the control unit 140 causes the prism 20 to emit light of autofluorescence in order to attenuate the amount of autofluorescence emitted from the prism 20. The light irradiation unit 120 is controlled to emit light for attenuating the light. Specifically, the control unit 140 controls the light source control unit 123 to irradiate the resin member (prism 20) of the measurement chip 10 with aging light from the light source unit 121. Thereby, at least in the region including the optical path of the excitation light α in the prism 20, the amount of autofluorescence emitted from the resin member can be attenuated. From the viewpoint of performing measurement with higher accuracy, the control unit 140 attenuates the amount of autofluorescence to the prism 20 until the attenuation rate A of the amount of autofluorescence emitted from the prism 20 satisfies the following formula (1). It is preferable to control the light irradiation unit 120 so that the light for making it irradiate. That is, it is preferable to age the measurement chip 10 until the attenuation rate A of the amount of autofluorescent light emitted from the resin on the optical path of the excitation light α satisfies the following formula (1).
Figure JPOXMLDOC01-appb-M000004
[In Formula (1), S1 is a signal value to be described later, OB is an optical blank value to be described later, and B is an upper limit value (%) of an allowable measurement error. B is calculated by the following equation (2). ]
[In Formula (2), S1 is a later-described signal value, and S2 is a later-described true signal value. ]

 ここで、「自家蛍光の光量の減衰率」とは、測定チップ10の樹脂部材に同一条件で単位時間の光照射を2回行ったときの、1回目の光照射時に放出された自家蛍光の光量に対する、2回目の光照射時に放出された自家蛍光の光量の減少度合を意味する。2回の光照射は、連続して行ってもよいし、断続的に行ってもよい。 Here, the “attenuation rate of the amount of light of autofluorescence” refers to the autofluorescence emitted during the first light irradiation when the resin member of the measurement chip 10 is irradiated twice with light under the same conditions for a unit time. This means the degree of decrease in the amount of autofluorescence emitted during the second light irradiation with respect to the amount of light. The two light irradiations may be performed continuously or intermittently.

 また、より短時間で自家蛍光の光量を減衰させる観点からは、この後の光学ブランク値の測定(工程S50)および蛍光値の測定(工程S80)のときに照射する励起光αの照射エネルギーより高い照射エネルギーの光を照射することが好ましい。励起光αの照射エネルギーより高い照射エネルギーのエージング光を照射する場合には、例えば、光源の出力を増加させるか、照射時間を長くすればよい。このとき、エージング光の照射条件は、要求される測定精度、プリズム20の樹脂材料などに応じて適宜設定されうる。たとえば、波長660nmのハイパワーLDを使用した場合、要求される測定精度の上限値Bが1%であり、S1およびOBがともに1000(a.u.)であるとき、減衰率Aを1%未満とするために、合計照射エネルギーが225mW・秒/mm以上となるように照射パワーや照射時間などを設定すればよい。たとえば、本実施の形態では、2.6mW・秒/mm以上の照射エネルギーの光を照射して、自家蛍光の光量の減衰率Aが上記の式(1)を満たすまで測定チップ10のエージングを行う。 Further, from the viewpoint of attenuating the amount of autofluorescence in a shorter time, from the irradiation energy of the excitation light α irradiated in the subsequent measurement of the optical blank value (step S50) and the measurement of the fluorescence value (step S80). It is preferable to irradiate light with high irradiation energy. When aging light having an irradiation energy higher than the irradiation energy of the excitation light α is irradiated, for example, the output of the light source may be increased or the irradiation time may be lengthened. At this time, the irradiation conditions of the aging light can be appropriately set according to the required measurement accuracy, the resin material of the prism 20, and the like. For example, when a high power LD with a wavelength of 660 nm is used, when the upper limit B of the required measurement accuracy is 1% and both S1 and OB are 1000 (au), the attenuation factor A is 1%. In order to make it less than, irradiation power, irradiation time, etc. should just be set so that total irradiation energy may be 225 mW * second / mm < 2 > or more. For example, in the present embodiment, the irradiation of light with an irradiation energy of 2.6 mW · sec / mm 2 or more is performed, and the measurement chip 10 is aged until the decay rate A of the amount of autofluorescent light satisfies the above equation (1). I do.

 なお、増強角を測定する工程(工程S20)と、測定チップ10の樹脂部材をエージングする工程(工程S40)とは、同時に行われてもよい。たとえば、測定チップ10から放出される自家蛍光の光量を減衰させることができるように、増強角を測定するときに照射する励起光α(エージング光)のパワーまたは時間を調整すればよい。 Note that the step of measuring the enhancement angle (step S20) and the step of aging the resin member of the measurement chip 10 (step S40) may be performed simultaneously. For example, the power or time of the excitation light α (aging light) irradiated when measuring the enhancement angle may be adjusted so that the amount of autofluorescence emitted from the measurement chip 10 can be attenuated.

 次いで、被測定物質を標識する蛍光物質が前記金属膜30上に存在しない状態で、励起光αをプリズム20を通して金属膜30(成膜面22)に照射して、蛍光γと同じ波長の光の光量(光学ブランク値)を測定する(工程S50)。ここで、「光学ブランク値」とは、蛍光値の測定(工程S80)において蛍光とともに測定される背景光の光量を意味する。この背景光は、主として、励起光αを照射したときに測定チップ10(プリズム20)から放出される自家蛍光に起因する。 Next, in the state where the fluorescent substance that labels the substance to be measured does not exist on the metal film 30, the excitation light α is irradiated to the metal film 30 (deposition surface 22) through the prism 20, and light having the same wavelength as the fluorescence γ. Is measured (optical blank value) (step S50). Here, the “optical blank value” means the amount of background light measured together with the fluorescence in the measurement of the fluorescence value (step S80). This background light is mainly caused by autofluorescence emitted from the measurement chip 10 (prism 20) when the excitation light α is irradiated.

 制御部140は、光学ブランク値を測定するために、蛍光物質が金属膜30上に存在しない状態で、金属膜30で表面プラズモン共鳴が発生するようにプリズム20を通して金属膜30に励起光αを照射するように光照射ユニット120を制御するとともに、測定チップ10から放出される光を検出するように受光ユニット130を制御する。具体的には、制御部140は、位置切替え機構136を制御して、光学フィルター133を受光光学系ユニット131の光路上に移動させる。ついで、制御部140は、光源制御部123を制御して、金属膜30(成膜面22)に向けて光源ユニット121から励起光αを出射させる。これと同時に、制御部140は、光センサー制御部137を制御して、受光センサー135で蛍光γと同じ波長の光の光量を検出する。これにより、受光センサー135は、正確にノイズとなる光の光量(光学ブランク値)を測定することができる。測定値は、制御部140に送信され、光学ブランク値として記録される。 In order to measure the optical blank value, the control unit 140 transmits the excitation light α to the metal film 30 through the prism 20 so that surface plasmon resonance occurs in the metal film 30 in a state where the fluorescent material is not present on the metal film 30. The light irradiation unit 120 is controlled to irradiate, and the light receiving unit 130 is controlled to detect the light emitted from the measurement chip 10. Specifically, the control unit 140 controls the position switching mechanism 136 to move the optical filter 133 onto the optical path of the light receiving optical system unit 131. Next, the control unit 140 controls the light source control unit 123 to emit the excitation light α from the light source unit 121 toward the metal film 30 (film formation surface 22). At the same time, the control unit 140 controls the light sensor control unit 137 so that the light receiving sensor 135 detects the amount of light having the same wavelength as the fluorescence γ. Thereby, the light receiving sensor 135 can accurately measure the amount of light (optical blank value) that becomes noise. The measured value is transmitted to the control unit 140 and recorded as an optical blank value.

 なお、この工程では、制御部140は、光学ブランク値の測定を2回行うように光照射ユニット120および受光ユニット130を制御して、得られた光学ブランク値を比較して、測定チップ10のエージングが十分になされていること(例えば、自家蛍光の光量の減衰率Aが上記の式(1)を満たしていること(例えばA<1%となっていること))を確認してもよい。 In this step, the control unit 140 controls the light irradiation unit 120 and the light receiving unit 130 so as to measure the optical blank value twice, compares the obtained optical blank value, and compares the obtained optical blank value. It may be confirmed that the aging is sufficiently performed (for example, the attenuation rate A of the amount of autofluorescence light satisfies the above formula (1) (for example, A <1%)). .

 次いで、検体中の被測定物質と捕捉体とを反応させる(1次反応;工程S60)。具体的には、送液ユニット側において流路41内に検体を注入して、検体と捕捉体とを接触させる。検体中に被測定物質が存在する場合は、被測定物質の少なくとも一部は捕捉体により捕捉される。この後、流路41内を緩衝液などで洗浄して、捕捉体に捕捉されなかった物質を除去する。検体の種類は、特に限定されない。検体の例には、血液や血清、血漿、尿、鼻孔液、唾液、精液などの体液およびその希釈液が含まれる。 Next, the substance to be measured in the sample is reacted with the capturing body (primary reaction; step S60). Specifically, the sample is injected into the channel 41 on the liquid feeding unit side, and the sample and the capturing body are brought into contact with each other. When the substance to be measured exists in the specimen, at least a part of the substance to be measured is captured by the capturing body. Thereafter, the inside of the flow path 41 is washed with a buffer solution or the like to remove substances not captured by the capturing body. The type of specimen is not particularly limited. Examples of the specimen include body fluids such as blood, serum, plasma, urine, nasal fluid, saliva, semen, and diluted solutions thereof.

 次いで、捕捉体に捕捉された被測定物質を蛍光物質で標識する(2次反応;工程S70)。具体的には、流路41内に蛍光標識液を提供する。蛍光標識液は、例えば、蛍光物質で標識された抗体(2次抗体)を含む緩衝液である。蛍光標識液が流路41に提供されると、蛍光標識液が被測定物質に接触し、被測定物質が蛍光物質で標識される。この後、流路41内を緩衝液などで洗浄し、遊離の蛍光物質などを除去する。 Next, the substance to be measured captured by the capturing body is labeled with a fluorescent material (secondary reaction; step S70). Specifically, a fluorescent labeling solution is provided in the channel 41. The fluorescent labeling solution is, for example, a buffer solution containing an antibody (secondary antibody) labeled with a fluorescent substance. When the fluorescent labeling liquid is provided to the flow path 41, the fluorescent labeling liquid comes into contact with the substance to be measured, and the substance to be measured is labeled with the fluorescent substance. Thereafter, the inside of the flow path 41 is washed with a buffer solution or the like to remove free fluorescent substances.

 次いで、金属膜30上に蛍光物質で標識された被測定物質が存在する状態で、プリズム20を通して金属膜30(成膜面22)に励起光αを照射して、反応場の被測定物質を標識する蛍光物質からの蛍光値を測定する(工程S80)。制御部140は、蛍光値を測定するために、蛍光物質で標識された被測定物質が金属膜30上に存在する状態で、金属膜30で表面プラズモン共鳴が発生するようにプリズム20を通して金属膜30に励起光αを照射するように光照射ユニット120を制御するとともに、蛍光物質から放出される蛍光を検出するように受光ユニット130を制御する。具体的には、制御部140は、光源制御部123を制御して、光源ユニット121から励起光αを出射させる。これと同時に、制御部140は、光センサー制御部137を制御して、受光センサー135で被測定物質を標識する蛍光物質から放出される蛍光γを検出する。 Next, in the state where the measurement target substance labeled with a fluorescent substance is present on the metal film 30, the metal film 30 (deposition surface 22) is irradiated with the excitation light α through the prism 20, so that the measurement target substance in the reaction field is irradiated. The fluorescence value from the fluorescent substance to be labeled is measured (step S80). In order to measure the fluorescence value, the control unit 140 allows the metal film to pass through the prism 20 so that surface plasmon resonance occurs in the metal film 30 in a state where the measurement target substance labeled with the fluorescent substance exists on the metal film 30. The light irradiation unit 120 is controlled so as to irradiate 30 with the excitation light α, and the light receiving unit 130 is controlled so as to detect the fluorescence emitted from the fluorescent material. Specifically, the control unit 140 controls the light source control unit 123 to emit the excitation light α from the light source unit 121. At the same time, the control unit 140 controls the optical sensor control unit 137 to detect the fluorescence γ emitted from the fluorescent substance that labels the substance to be measured by the light receiving sensor 135.

 最後に、被測定物質の存在または量を示すシグナル値を算出する(工程S90)。蛍光値は、主として、被測定物質を標識する蛍光物質に由来する蛍光成分(シグナル値)と、測定チップ10の自家蛍光に由来する蛍光成分(光学ブランク値)とを含む。したがって、制御部140は、工程S80で得られた蛍光値から工程S50で得られた光学ブランク値を引くことで、被測定物質の量に相関するシグナル値を算出することができる。シグナル値は、あらかじめ作成しておいた検量線により、被測定物質の量や濃度などに換算される。 Finally, a signal value indicating the presence or amount of the substance to be measured is calculated (step S90). The fluorescence value mainly includes a fluorescent component (signal value) derived from a fluorescent substance that labels the substance to be measured, and a fluorescent component (optical blank value) derived from the autofluorescence of the measurement chip 10. Therefore, the control unit 140 can calculate a signal value correlated with the amount of the substance to be measured by subtracting the optical blank value obtained in step S50 from the fluorescence value obtained in step S80. The signal value is converted into the amount and concentration of the substance to be measured by a calibration curve prepared in advance.

 以上の手順により、被測定物質の存在または量を示すシグナル値を測定することができる。前述のとおり、高精度で被測定物質を測定する観点からは、制御部140は、自家蛍光の光量を減衰させるために照射される光の測定チップ10内の光路が、光学ブランク値および蛍光値を測定するために照射される励起光αの測定チップ10内の光路と重複するように光照射ユニット120を制御することが好ましい。すなわち、工程S40におけるエージングするための光の測定チップ10内の光路と、工程S50および工程S80における励起光αの測定チップ10内の光路とは、重複していることが好ましい。また、エージング時間を短縮化する観点からは、制御部140は、自家蛍光の光量を減衰させるために照射される光のパワーが、光学ブランク値および蛍光値を測定するために照射される励起光αのパワーより高くなるように光照射ユニット120を制御することが好ましい。すなわち、工程S40におけるエージング光のパワー(mW/mm)は、工程S50および工程S80における励起光αのパワー(mW/mm)より高いことが好ましい。 The signal value indicating the presence or amount of the substance to be measured can be measured by the above procedure. As described above, from the viewpoint of measuring the substance to be measured with high accuracy, the control unit 140 determines that the optical path in the measurement chip 10 of the light irradiated to attenuate the amount of autofluorescence is the optical blank value and the fluorescence value. It is preferable to control the light irradiation unit 120 so as to overlap the optical path in the measurement chip 10 of the excitation light α irradiated for measuring the light. That is, it is preferable that the optical path in the measurement chip 10 for light for aging in step S40 and the optical path in the measurement chip 10 for excitation light α in steps S50 and S80 overlap. Also, from the viewpoint of shortening the aging time, the control unit 140 determines that the power of the light irradiated to attenuate the amount of autofluorescence is excitation light irradiated to measure the optical blank value and the fluorescence value. It is preferable to control the light irradiation unit 120 to be higher than the power of α. That is, the power (mW / mm 2 ) of the aging light in step S40 is preferably higher than the power (mW / mm 2 ) of the excitation light α in step S50 and step S80.

 なお、本実施の形態では、1次反応(工程S60)および2次反応(工程S70)を連続して行い、両工程の間で測定チップ10を、送液ユニット側から光照射ユニット120および受光ユニット130側に移動させていない。このため、測定チップ10の移動時間分、検出にかかる合計時間を短縮することができる。また、1次反応時間と、2次反応時間と、1次反応および2次反応の間隔時間とを一定に保つことにより、測定精度を向上させることもできる。 In the present embodiment, the primary reaction (step S60) and the secondary reaction (step S70) are continuously performed, and the measurement chip 10 is placed between the light irradiation unit 120 and the light receiving unit from the liquid feeding unit side between the two steps. It is not moved to the unit 130 side. For this reason, the total time concerning detection can be shortened by the moving time of the measuring chip 10. In addition, the measurement accuracy can be improved by keeping the primary reaction time, the secondary reaction time, and the interval time between the primary reaction and the secondary reaction constant.

 また、光学ブランク値を測定する工程(工程S50)と、1次反応を行う工程(工程S60)とを行う順番はこれに限定されず、1次反応を行った後に光学ブランク値を測定してもよい。この場合、1次反応と2次反応との間に測定チップ10を移動させる必要があるものの、捕捉体に被測定物質が捕捉された状態で光学ブランク値の測定をすることができる。その結果、蛍光値を測定する工程(工程S80)に、より近い状態で光学ブランク値を測定できるため、光学ブランク値をより正確に測定することができ、測定精度をより向上させることができる。 Moreover, the order which performs the process (process S50) which measures an optical blank value, and the process (process S60) which performs a primary reaction is not limited to this, An optical blank value is measured after performing a primary reaction. Also good. In this case, although it is necessary to move the measuring chip 10 between the primary reaction and the secondary reaction, the optical blank value can be measured in a state where the substance to be measured is captured by the capturing body. As a result, since the optical blank value can be measured in a state closer to the step of measuring the fluorescence value (step S80), the optical blank value can be measured more accurately, and the measurement accuracy can be further improved.

 (参考実験1)
 ここで、測定チップ10の樹脂部材(プリズム20)に対するエージングの効果について調べた結果を示す。参考実験1では、測定チップ10の金属膜30に、入射角が増強角となるようにプリズム20側から励起光αを断続的に照射して、光学ブランク値の測定を行った。このとき、測定チップ10のプリズム20には、照射エネルギー22.6mW・秒/mmの光を断続的に照射した。光源としてはハイパワーLDを使用し、受光センサー135としてはフォトダイオード(PD)を使用した。プリズム20の材料はシクロオレフィン系ポリマーである。
(Reference Experiment 1)
Here, the result of having investigated about the effect of the aging with respect to the resin member (prism 20) of the measurement chip | tip 10 is shown. In Reference Experiment 1, the optical blank value was measured by intermittently irradiating the metal film 30 of the measurement chip 10 with the excitation light α from the prism 20 side so that the incident angle becomes an enhancement angle. At this time, the prism 20 of the measuring chip 10 was intermittently irradiated with light having an irradiation energy of 22.6 mW · sec / mm 2 . A high power LD was used as the light source, and a photodiode (PD) was used as the light receiving sensor 135. The material of the prism 20 is a cycloolefin polymer.

 図3Aは、測定チップ10のプリズム20に照射された励起光αの照射エネルギーと、光学ブランク値との関係を示すグラフであり、図3B、Cは、測定チップ10のプリズム20に対するエージングの効果について説明するための概念図である。図3Aにおいて、横軸はプリズム20に照射された励起光αの合計照射エネルギー(mW・秒/mm)を示し、縦軸は光学ブランク値(a.u.)を示す。図3B、Cは、光学ブランク値、蛍光値およびシグナル値の関係を示す概念図である。図3B、Cにおいて、OB(OB1およびOB2)は光学ブランク値を示し、Fは蛍光値を示し、S(S1およびS2)はシグナル値を示す。OB、FおよびSは、以下の式(3)を満たす。
 S=F-OB   …(3)
FIG. 3A is a graph showing the relationship between the irradiation energy of the excitation light α irradiated on the prism 20 of the measurement chip 10 and the optical blank value, and FIGS. 3B and 3C show the effects of aging on the prism 20 of the measurement chip 10. It is a conceptual diagram for demonstrating. 3A, the horizontal axis represents the total irradiation energy (mW · second / mm 2 ) of the excitation light α irradiated to the prism 20, and the vertical axis represents the optical blank value (au). 3B and 3C are conceptual diagrams showing the relationship between the optical blank value, the fluorescence value, and the signal value. 3B and C, OB (OB1 and OB2) indicates an optical blank value, F indicates a fluorescence value, and S (S1 and S2) indicates a signal value. OB, F, and S satisfy the following formula (3).
S = F-OB (3)

 図3Aに示されるように、測定チップ10のプリズム20にハイパワーの励起光αを照射した場合、光学ブランク値は、励起光αを照射するほど対数関数的(または指数関数的)に減少した。この結果から、測定チップ10の樹脂部材に励起光αを照射するほど、測定チップ10から放出される自家蛍光の光量が減衰することがわかる。また、自家蛍光の減衰率は、励起光αを照射するほど小さくなることもわかる。 As shown in FIG. 3A, when the prism 20 of the measurement chip 10 is irradiated with the high power excitation light α, the optical blank value decreases logarithmically (or exponentially) as the excitation light α is irradiated. . From this result, it can be seen that the amount of autofluorescence emitted from the measurement chip 10 decreases as the resin member of the measurement chip 10 is irradiated with the excitation light α. It can also be seen that the autofluorescence decay rate decreases as the excitation light α is irradiated.

 ここで、比較のために、測定チップ10のエージングを行わずに、光学ブランク値の測定およびその後に蛍光値の測定を行う場合について説明する。この場合、図3Bに示されるような光量で、光学ブランク値OB1および蛍光値Fが測定される(説明の便宜上、光学ブランク値の光量を大きくしている)。蛍光値Fの測定は、光学ブランク値OB1の測定の後に行われるため、図3Aのグラフを考慮すると、光学ブランク値OB1の測定時と比較して、蛍光値Fの測定時における自家蛍光の光量は減衰しており、蛍光値Fの測定時における真の光学ブランク値OB2も減衰している。したがって、自家蛍光の光量の減衰を考慮せずに蛍光値Fから光学ブランク値OB1を引いてシグナル値S1を算出すると、図3Cに示されるように、シグナル値S1は、真のシグナル値S2よりも光学ブランク値の減衰量ΔOB(=OB1-OB2)の分だけ小さい値として算出されてしまう。 Here, for comparison, a case where the measurement of the optical blank value and the subsequent measurement of the fluorescence value are performed without aging the measurement chip 10 will be described. In this case, the optical blank value OB1 and the fluorescence value F are measured with a light amount as shown in FIG. 3B (for convenience of explanation, the light amount of the optical blank value is increased). Since the measurement of the fluorescence value F is performed after the measurement of the optical blank value OB1, considering the graph of FIG. Is attenuated, and the true optical blank value OB2 when the fluorescence value F is measured is also attenuated. Therefore, when the signal value S1 is calculated by subtracting the optical blank value OB1 from the fluorescence value F without considering the attenuation of the amount of autofluorescence, as shown in FIG. 3C, the signal value S1 is greater than the true signal value S2. Is also calculated as a smaller value by the amount of attenuation ΔOB (= OB1−OB2) of the optical blank value.

 これに対して、本実施の形態に係る測定方法および測定装置では、光学ブランク値OB1の測定前に測定チップに光を照射してエージングを行う。図3Aに示されるように、自家蛍光の光量の減衰率は、光を照射するほど小さくなっていく。このため、光学ブランク値OBの測定前に自家蛍光の光量の減衰率を十分に小さくなるまで、測定チップ10のプリズム20に光を照射しておくことで、光学ブランク値の測定時に測定される光学ブランク値OB1と、蛍光値Fの測定時の真の光学ブランク値OB2との差(ΔOB)を無視できる程度まで小さくすることができる。この結果として、蛍光値Fから光学ブランク値OB1をそのまま引いても、被測定物質の存在または量を示すシグナル値を高精度に算出することができる。 In contrast, in the measurement method and the measurement apparatus according to the present embodiment, aging is performed by irradiating the measurement chip with light before measuring the optical blank value OB1. As shown in FIG. 3A, the attenuation rate of the amount of autofluorescence decreases as light is irradiated. For this reason, it is measured at the time of measuring the optical blank value by irradiating the prism 20 of the measuring chip 10 with light until the attenuation rate of the light amount of the autofluorescence becomes sufficiently small before measuring the optical blank value OB. The difference (ΔOB) between the optical blank value OB1 and the true optical blank value OB2 when measuring the fluorescence value F can be reduced to a negligible level. As a result, even if the optical blank value OB1 is directly subtracted from the fluorescence value F, a signal value indicating the presence or amount of the substance to be measured can be calculated with high accuracy.

 (参考実験2)
 次いで、所望の測定精度を得るために要するエージングの条件について調べた結果を示す。ここでは、光学ブランク値OB1およびシグナル値S1がともに1000(a.u.)である場合に、上記の真のシグナル値S2と、蛍光値Fおよび光学ブランク値OB1から算出されたシグナル値S1とに基づいて前述の式(2)から算出される許容可能な測定誤差の上限値Bが1%未満となること、を実現するために要するエージングの条件について調べた。なお、式(1)から明らかなように、光学ブランク値OB1およびシグナル値S1がともに1000(a.u.)である場合、自家蛍光の光量の減衰率Aは、許容可能な測定誤差の上限値Bよりも小さな値であること(A<B)を要する。このため、許容可能な測定誤差の上限値Bが1%未満となるためには、自家蛍光の光量(光学ブランク値)の減衰率Aも1%未満となる必要がある。
(Reference Experiment 2)
Next, the results of examining the aging conditions required to obtain the desired measurement accuracy are shown. Here, when the optical blank value OB1 and the signal value S1 are both 1000 (au), the true signal value S2, the signal value S1 calculated from the fluorescence value F and the optical blank value OB1, and Based on the above, the aging condition required to realize that the upper limit B of the allowable measurement error calculated from the above-described equation (2) is less than 1% was examined. As is clear from the equation (1), when the optical blank value OB1 and the signal value S1 are both 1000 (au), the attenuation factor A of the amount of autofluorescence is the upper limit of the allowable measurement error. It is necessary that the value is smaller than the value B (A <B). For this reason, in order for the upper limit B of the allowable measurement error to be less than 1%, the attenuation rate A of the autofluorescence light amount (optical blank value) needs to be less than 1%.

 参考実験2では、測定チップ10の金属膜30に、入射角が増強角となるようにプリズム20側から励起光αを照射して(金属膜30上の励起光αの照射スポット径:φ1.5mm)、光学ブランク値の測定を連続して行った。このとき、測定チップ10のプリズム20には、照射エネルギー22.6mW・秒/mmの光を断続的に照射した。光源としてはハイパワーLDを使用し、受光センサー135としてはフォトダイオード(PD)を使用した。プリズム20の材料はシクロオレフィン系ポリマーである。 In Reference Experiment 2, the metal film 30 of the measurement chip 10 is irradiated with excitation light α from the prism 20 side so that the incident angle becomes an enhancement angle (irradiation spot diameter of the excitation light α on the metal film 30: φ1. 5 mm), the measurement of the optical blank value was continuously performed. At this time, the prism 20 of the measuring chip 10 was intermittently irradiated with light having an irradiation energy of 22.6 mW · sec / mm 2 . A high power LD was used as the light source, and a photodiode (PD) was used as the light receiving sensor 135. The material of the prism 20 is a cycloolefin polymer.

 図4は、測定チップ10の樹脂部材に照射された光の照射エネルギーと、光学ブランク値(自家蛍光の光量)の減衰率との関係を示すグラフである。図4において、横軸は励起光αの合計照射エネルギー(mW・秒/mm)を示し、縦軸は光学ブランク値の減衰率(%)を示す。光学ブランク値と照射エネルギーとの関係は、以下の式(4)を満足していた(図3A参照)。
 光学ブランク値=-88×ln(照射エネルギー)+1275 …(4)
 また、光学ブランク値の減衰率は、光学ブランク値に基づいて以下の式(5)から算出した。
 減衰率=|OBn+1/OB-1|×100   …(5)
 [式(5)において、OBは、測定チップ10にn回励起光αを照射した後の光学ブランク値である。OBn+1は、測定チップ10にn+1回励起光αを照射した後の光学ブランク値である。]
FIG. 4 is a graph showing the relationship between the irradiation energy of the light applied to the resin member of the measuring chip 10 and the attenuation rate of the optical blank value (the amount of autofluorescence). In FIG. 4, the horizontal axis indicates the total irradiation energy (mW · second / mm 2 ) of the excitation light α, and the vertical axis indicates the attenuation rate (%) of the optical blank value. The relationship between the optical blank value and the irradiation energy satisfied the following formula (4) (see FIG. 3A).
Optical blank value = −88 × ln (irradiation energy) +1275 (4)
Moreover, the attenuation factor of the optical blank value was calculated from the following formula (5) based on the optical blank value.
Attenuation rate = | OB n + 1 / OB n −1 | × 100 (5)
[In formula (5), OB n is an optical blank value after irradiation n times the excitation light α to the measurement chip 10. OB n + 1 is an optical blank value after the measurement chip 10 is irradiated with the excitation light α n + 1 times. ]

 図4に示されるように、測定チップ10の樹脂部材に光を照射するほど、光学ブランク値の減衰率は小さくなった。これは、測定チップ10のエージングにより、自家蛍光の減衰が飽和していくためと考えられる。また、前述のとおり、上記実験条件において、OB1およびS1がともに1000(a.u.)である場合に、光学ブランク値の減衰による許容可能な測定誤差の上限値Bを1%未満にするためには、光学ブランク値の減衰率Aも1%未満とする必要があり、エージング光として225mW・秒/mm以上の照射エネルギーの光を照射すべきことがわかった。 As FIG. 4 shows, the attenuation factor of the optical blank value became small, so that the resin member of the measurement chip | tip 10 was irradiated with light. This is considered because the decay of autofluorescence is saturated due to the aging of the measurement chip 10. In addition, as described above, in the above experimental conditions, when both OB1 and S1 are 1000 (au), the upper limit value B of an allowable measurement error due to attenuation of the optical blank value is set to less than 1%. Therefore, it was found that the attenuation factor A of the optical blank value also needs to be less than 1%, and light with an irradiation energy of 225 mW · sec / mm 2 or more should be irradiated as aging light.

 (効果)
 以上のように、本実施の形態に係る測定方法および測定装置によれば、光学ブランク測定の前に測定チップ10をエージングすることにより、励起光αの照射時における自家蛍光の減衰を抑制して光学ブランク値を正確に測定することができる。このため、本実施の形態に係る測定方法および測定装置によれば、検体中の被測定物質を高精度に測定することができる。また、本実施の形態に係る測定方法および測定装置では、受光センサー135としてPDを使用しているため、蛍光の受光量が多くても被測定物質を高精度に測定することができる。したがって、本実施の形態に係る測定方法および測定装置では、幅広いダイナミックレンジで被測定物質を測定することができる。
(effect)
As described above, according to the measurement method and the measurement apparatus according to the present embodiment, by aging the measurement chip 10 before the optical blank measurement, the attenuation of the autofluorescence during the irradiation of the excitation light α is suppressed. The optical blank value can be accurately measured. For this reason, according to the measuring method and measuring device concerning this embodiment, it is possible to measure the substance to be measured in the specimen with high accuracy. In the measurement method and measurement apparatus according to this embodiment, since the PD is used as the light receiving sensor 135, the substance to be measured can be measured with high accuracy even if the amount of received fluorescence is large. Therefore, the measurement method and the measurement apparatus according to the present embodiment can measure a substance to be measured with a wide dynamic range.

 なお、上記実施の形態では、SPFSを利用した測定方法および測定装置について説明したが、本発明に係る測定方法および測定装置は、これに限定されず、ハイパワーの光源と、樹脂部材を含む測定チップとを使用する他の蛍光測定にも使用されうる。 In the above embodiment, the measurement method and the measurement apparatus using SPFS have been described. However, the measurement method and the measurement apparatus according to the present invention are not limited to this, and the measurement includes a high-power light source and a resin member. It can also be used for other fluorescence measurements using the chip.

 [実施の形態2]
 実施の形態2では、あらかじめエージングした測定チップを使用して、被測定物質の測定を行う態様について説明する。本実施の形態に係る測定装置は、エージング光を照射しない点を除いては実施の形態1に係る測定装置と同一であるため、測定装置の各構成要素についての説明を省略する。
[Embodiment 2]
In Embodiment 2, an aspect in which a measurement target substance is measured using a measurement chip that has been aged in advance will be described. Since the measurement apparatus according to the present embodiment is the same as the measurement apparatus according to the first embodiment except that the aging light is not irradiated, description of each component of the measurement apparatus is omitted.

 図1に示されるように、実施の形態2に係る測定チップ10’は、プリズム20’、金属膜30および流路蓋40を有する。本実施の形態に係る測定チップ10’は、プリズム20’があらかじめエージングされている点を除き、実施の形態1に係る測定チップ10と同一であるため、各構成要素についての説明を省略する。 As shown in FIG. 1, the measurement chip 10 ′ according to the second embodiment includes a prism 20 ′, a metal film 30, and a channel lid 40. The measurement chip 10 ′ according to the present embodiment is the same as the measurement chip 10 according to the first embodiment except that the prism 20 ′ is pre-aged, and thus description of each component is omitted.

 本実施の形態に係る測定チップ10’の製造方法の一例について説明する。本実施の形態に係る測定チップ10’は、例えば、測定用のチップを作製する工程と、チップをエージングする工程とを行うことにより製造されうる。以下、各工程について説明する。 An example of a method for manufacturing the measurement chip 10 'according to the present embodiment will be described. The measurement chip 10 ′ according to the present embodiment can be manufactured, for example, by performing a process for producing a measurement chip and a process for aging the chip. Hereinafter, each step will be described.

 まず、測定用のチップを作製する。具体的には、誘電体である樹脂からなるプリズムと、流路蓋とを準備する。次いで、準備したプリズムに金属膜30を形成する。たとえば、射出成形法により所望の形状に成形したプリズムの一面上に金属膜30を真空蒸着法により形成すればよい。次いで、金属膜30上に捕捉体を固定化する。捕捉体を固定化する方法は、特に限定されず、公知の方法から適宜選択されうる。次いで、金属膜30および反応場が形成されたプリズムと、流路蓋とを固定する。たとえば、プリズムおよび流路蓋を両面テープや接着剤などにより接着すればよい。 First, a measurement chip is prepared. Specifically, a prism made of resin as a dielectric and a flow path lid are prepared. Next, the metal film 30 is formed on the prepared prism. For example, the metal film 30 may be formed by vacuum deposition on one surface of a prism formed into a desired shape by injection molding. Next, the capturing body is immobilized on the metal film 30. The method for immobilizing the capturing body is not particularly limited, and can be appropriately selected from known methods. Next, the prism on which the metal film 30 and the reaction field are formed and the flow path lid are fixed. For example, the prism and the channel cover may be bonded with a double-sided tape or an adhesive.

 次いで、準備したチップをエージングする。具体的には、作製したチップにエージング光を照射する。エージング光の照射条件は、プリズムを構成する樹脂の種類などに応じて適宜設定されうる。このとき、チップのエージングは、チップの樹脂部材(プリズム)に光を照射したときに放出される自家蛍光の光量の減衰率が所望の値(例えば1%)以下になるまで行われる。たとえば、波長660nmのハイパワーLDを使用した場合、合計照射エネルギーが225mW・秒/mm程度となるように照射パワー(ここでは、22.6mW・秒/mmの照射エネルギー)や照射時間などを設定すればよい。 Next, the prepared chip is aged. Specifically, the produced chip is irradiated with aging light. The aging light irradiation conditions can be appropriately set according to the type of resin constituting the prism. At this time, the aging of the chip is performed until the decay rate of the amount of autofluorescent light emitted when the resin member (prism) of the chip is irradiated with light becomes a desired value (for example, 1%) or less. For example, when a high power LD with a wavelength of 660 nm is used, the irradiation power (in this case, irradiation energy of 22.6 mW · second / mm 2 ), irradiation time, etc. so that the total irradiation energy is about 225 mW · second / mm 2. Should be set.

 以上の手順により、被測定物質を標識する蛍光物質が、表面プラズモン共鳴に基づく局在場光により励起されて放出した蛍光γを検出して、被測定物質の存在または量を測定する測定方法に使用される測定チップ10’であって、プリズム20’と、金属膜30とを有し、蛍光を検出する時に金属膜30に照射する励起光αと同じ照射エネルギーの光をプリズム20’に連続して2回照射したときに、プリズム20’から放出される自家蛍光の光量の減衰率が所望の値(例えば1%)以下である測定チップ10’を製造することができる。測定チップ10’のエージングによる自家蛍光の光量の減衰は、時間が経過しても回復することがない(図3A、図4参照)。このため、測定チップ10’の製造時にあらかじめエージングを行っておけば、被測定物質の測定時にエージングを行わなくてもよい。 By the above procedure, the fluorescent substance that labels the substance to be measured is detected by the fluorescence γ emitted and excited by the localized field light based on the surface plasmon resonance, and the measurement method is used to measure the presence or amount of the substance to be measured. A measurement chip 10 ′ used, which has a prism 20 ′ and a metal film 30, and continuously emits light with the same irradiation energy as the excitation light α irradiated to the metal film 30 when detecting fluorescence. Thus, the measurement chip 10 ′ in which the attenuation rate of the amount of autofluorescent light emitted from the prism 20 ′ is less than a desired value (for example, 1%) when irradiated twice can be manufactured. The attenuation of the amount of autofluorescence due to the aging of the measurement chip 10 'does not recover over time (see FIGS. 3A and 4). For this reason, if aging is performed in advance when the measurement chip 10 ′ is manufactured, it is not necessary to perform aging when measuring the substance to be measured.

 本実施の形態に係る測定チップ10’を使用して被測定物質を測定する測定方法は、エージングを行わない点を除いて実施の形態1の測定方法と同様であるため、その説明を省略する。 The measurement method for measuring the substance to be measured using the measurement chip 10 ′ according to the present embodiment is the same as the measurement method of the first embodiment except that aging is not performed, and thus the description thereof is omitted. .

 (効果)
 本実施の形態によれば、測定時にエージングを行うことなく、実施の形態1と同様の効果を得ることができる。
(effect)
According to the present embodiment, the same effect as in the first embodiment can be obtained without performing aging during measurement.

 なお、実施の形態2では、チップを作製した後にエージングする場合について説明したが、測定チップ10’は、エージングされたプリズム20’と、流路蓋40とを固定することにより製造されてもよい。 In the second embodiment, the case of aging after manufacturing the chip has been described. However, the measurement chip 10 ′ may be manufactured by fixing the aged prism 20 ′ and the channel lid 40. .

 本出願は、2015年3月20日出願の特願2015-058016に基づく優先権を主張する。当該出願明細書および図面に記載された内容は、すべて本願明細書に援用される。 This application claims priority based on Japanese Patent Application No. 2015-058016 filed on March 20, 2015. The contents described in the application specification and the drawings are all incorporated herein.

 本発明に係る測定方法および測定装置は、被測定物質を高感度、かつ高精度で測定することができるため、例えば臨床検査などに有用である。 The measuring method and measuring apparatus according to the present invention can measure a substance to be measured with high sensitivity and high accuracy, and are useful for clinical examinations, for example.

 10、10’ 測定チップ
 20、20’ プリズム
 21 入射面
 22 成膜面
 23 出射面
 30 金属膜
 40 流路蓋
 41 流路
 100 表面プラズモン共鳴蛍光分析装置(SPFS装置)
 110 チップホルダー
 120 光照射ユニット
 121 光源ユニット
 122 角度調整部
 123 光源制御部
 130 受光ユニット
 131 受光光学系ユニット
 132 第1レンズ
 133 光学フィルター
 134 第2レンズ
 135 受光センサー
 136 位置切替え機構
 137 光センサー制御部
 140 制御部
 α 励起光
 β プラズモン散乱光
 γ 蛍光
10, 10 'Measuring chip 20, 20' Prism 21 Incident surface 22 Deposition surface 23 Emission surface 30 Metal film 40 Channel lid 41 Channel 100 Surface plasmon resonance fluorescence analyzer (SPFS device)
DESCRIPTION OF SYMBOLS 110 Chip holder 120 Light irradiation unit 121 Light source unit 122 Angle adjustment part 123 Light source control part 130 Light reception unit 131 Light reception optical system unit 132 1st lens 133 Optical filter 134 2nd lens 135 Light reception sensor 136 Position switching mechanism 137 Optical sensor control part 140 Control unit α Excitation light β Plasmon scattered light γ Fluorescence

Claims (15)

 被測定物質を標識する蛍光物質が、表面プラズモン共鳴に基づく局在場光により励起されて放出した蛍光を検出して、前記被測定物質の存在または量を示すシグナル値を測定する測定方法であって、
 誘電体である樹脂からなるプリズムと、前記プリズムの一面上に配置された金属膜とを有する測定チップの前記プリズムに光を照射して、前記プリズムから放出される自家蛍光の光量を減衰させる第1工程と、
 前記第1工程の後に、前記蛍光物質が前記金属膜上に存在しない状態で、前記金属膜で表面プラズモン共鳴が発生するように、前記プリズムを通して前記金属膜に励起光を照射して、前記測定チップから放出される光を検出し、光学ブランク値を測定する第2工程と、
 前記第2工程の後に、前記蛍光物質で標識された前記被測定物質が前記金属膜上に存在する状態で、前記金属膜で表面プラズモン共鳴が発生するように、前記プリズムを通して前記金属膜に励起光を照射して、前記蛍光物質から放出される蛍光を検出し、蛍光値を測定する第3工程と、
 前記第3工程の後に、前記蛍光値から前記光学ブランク値を引いて前記シグナル値を算出する第4工程と、
 を含む、測定方法。
This is a measurement method in which a fluorescent substance that labels a substance to be measured detects fluorescence emitted by being excited by localized field light based on surface plasmon resonance, and measures a signal value indicating the presence or amount of the substance to be measured. And
Irradiating light to the prism of the measuring chip having a prism made of resin as a dielectric and a metal film disposed on one surface of the prism, attenuates the amount of autofluorescence emitted from the prism. 1 process,
After the first step, the measurement is performed by irradiating the metal film with excitation light through the prism so that surface plasmon resonance occurs in the metal film in a state where the fluorescent material is not present on the metal film. A second step of detecting light emitted from the chip and measuring an optical blank value;
After the second step, the metal film is excited through the prism so that surface plasmon resonance occurs in the metal film in a state where the substance to be measured labeled with the fluorescent material exists on the metal film. A third step of irradiating light, detecting fluorescence emitted from the fluorescent material, and measuring a fluorescence value;
A fourth step of calculating the signal value by subtracting the optical blank value from the fluorescence value after the third step;
Including a measuring method.
 前記第1工程では、前記プリズムから放出される前記自家蛍光の光量の減衰率Aが下記の式(1)を満たすまで、前記プリズムに光を照射する、請求項1に記載の測定方法。
Figure JPOXMLDOC01-appb-M000001
 [式(1)において、S1は前記シグナル値であり、OBは前記光学ブランク値であり、Bは許容可能な測定誤差の上限値(%)である。]
2. The measurement method according to claim 1, wherein in the first step, the prism is irradiated with light until an attenuation rate A of the light amount of the autofluorescence emitted from the prism satisfies the following formula (1).
Figure JPOXMLDOC01-appb-M000001
[In Formula (1), S1 is the said signal value, OB is the said optical blank value, B is the upper limit (%) of the allowable measurement error. ]
 前記第2工程では、前記光学ブランク値の測定を2回行い、前記自家蛍光の光量の減衰率Aが前記式(1)を満たしていることを確認する、請求項2に記載の測定方法。 The measurement method according to claim 2, wherein in the second step, the optical blank value is measured twice, and it is confirmed that the attenuation rate A of the light amount of the autofluorescence satisfies the formula (1).  前記第1工程で照射される光の前記測定チップ内の光路は、前記第2工程および前記第3工程で照射される励起光の前記測定チップ内の光路と重複している、請求項1~3のいずれか一項に記載の測定方法。 The optical path in the measurement chip of the light irradiated in the first step overlaps the optical path in the measurement chip of the excitation light irradiated in the second step and the third step. 4. The measuring method according to any one of 3.  前記第1工程で照射される光のパワーは、前記第2工程および前記第3工程で照射される励起光のパワーより高い、請求項1~4のいずれか一項に記載の測定方法。 The measurement method according to any one of claims 1 to 4, wherein the power of the light irradiated in the first step is higher than the power of the excitation light irradiated in the second step and the third step.  前記第1工程は、前記測定チップの製造時に行われる、請求項1~5のいずれか一項に記載の測定方法。 The measuring method according to any one of claims 1 to 5, wherein the first step is performed when the measuring chip is manufactured.  誘電体である樹脂からなるプリズムと、前記プリズムの一面上に配置された金属膜とを有する測定チップが装着され、前記プリズムを通して前記金属膜に励起光を照射することで、前記金属膜上に存在する被測定物質を標識する蛍光物質を表面プラズモン共鳴に基づく局在場光により励起させ、前記蛍光物質から放出された蛍光を検出することで、前記被測定物質の存在または量を示すシグナル値を測定するための測定装置であって、
 前記測定チップを保持するためのホルダーと、
 前記プリズムから放出される自家蛍光の光量を減衰させるための光と、前記蛍光物質を励起するための励起光とを、前記ホルダーに保持された前記測定チップに照射する光照射部と、
 前記光照射部が前記測定チップに光を照射したときに、前記測定チップから放出される光を検出する光検出部と、
 前記光検出部により得られた検出値を処理する処理部と、
 前記光照射部および前記光検出部の動作を制御する制御部と、
 を有し、
 前記制御部は、光学ブランク値を測定するために、前記蛍光物質が前記金属膜上に存在しない状態で、前記金属膜で表面プラズモン共鳴が発生するように前記プリズムを通して前記金属膜に励起光を照射するように前記光照射部を制御するとともに、前記測定チップから放出される光を検出するように前記光検出部を制御し、
 前記制御部は、蛍光値を測定するために、前記蛍光物質で標識された前記被測定物質が前記金属膜上に存在する状態で、前記金属膜で表面プラズモン共鳴が発生するように前記プリズムを通して前記金属膜に励起光を照射するように前記光照射部を制御するとともに、前記蛍光物質から放出される蛍光を検出するように前記光検出部を制御し、
 前記制御部は、前記光学ブランク値の測定および前記蛍光値の測定より前に、前記プリズムから放出される前記自家蛍光の光量を減衰させるために、前記プリズムに前記自家蛍光の光量を減衰させるための光を照射するように前記光照射部を制御し、
 前記処理部は、前記蛍光値から前記光学ブランク値を引いて前記シグナル値を算出する、
 測定装置。
A measurement chip having a prism made of resin as a dielectric and a metal film disposed on one surface of the prism is mounted, and the metal film is irradiated with excitation light through the prism, thereby allowing the metal film to be irradiated on the metal film. A signal value indicating the presence or amount of the substance to be measured by exciting a fluorescent substance that labels the substance to be measured with localized field light based on surface plasmon resonance and detecting the fluorescence emitted from the fluorescent substance. A measuring device for measuring
A holder for holding the measurement chip;
A light irradiating unit that irradiates the measurement chip held by the holder with light for attenuating the amount of autofluorescence emitted from the prism and excitation light for exciting the fluorescent material;
A light detection unit that detects light emitted from the measurement chip when the light irradiation unit irradiates the measurement chip with light; and
A processing unit for processing a detection value obtained by the light detection unit;
A control unit for controlling operations of the light irradiation unit and the light detection unit;
Have
In order to measure an optical blank value, the control unit emits excitation light to the metal film through the prism so that surface plasmon resonance occurs in the metal film in a state where the fluorescent material is not present on the metal film. Controlling the light irradiation unit to irradiate and controlling the light detection unit to detect light emitted from the measurement chip;
In order to measure the fluorescence value, the control unit passes through the prism so that surface plasmon resonance is generated in the metal film in a state where the substance to be measured labeled with the fluorescent material exists on the metal film. Control the light irradiation unit to irradiate the metal film with excitation light, and control the light detection unit to detect fluorescence emitted from the fluorescent material,
In order to attenuate the light amount of the autofluorescence in the prism, the control unit attenuates the light amount of the autofluorescence emitted from the prism before the measurement of the optical blank value and the measurement of the fluorescence value. Controlling the light irradiation unit to irradiate the light of
The processing unit calculates the signal value by subtracting the optical blank value from the fluorescence value.
measuring device.
 前記自家蛍光の光量を減衰させるための光を照射するための前記光照射部の光源と、前記蛍光物質を励起するための励起光を照射するための前記光照射部の光源とは、同じであり、
 前記光源のパワーは、1mW/mm以上である、
 請求項7に記載の測定装置。
The light source of the light irradiation unit for irradiating light for attenuating the amount of autofluorescence and the light source of the light irradiation unit for irradiating excitation light for exciting the fluorescent material are the same. Yes,
The power of the light source is 1 mW / mm 2 or more.
The measuring apparatus according to claim 7.
 前記制御部は、前記プリズムから放出される前記自家蛍光の光量の減衰率Aが下記の式(1)を満たすまで、前記プリズムに前記自家蛍光の光量を減衰させるための光を照射するように前記光照射部を制御する、請求項7または請求項8に記載の測定装置。
Figure JPOXMLDOC01-appb-M000002
[式(1)において、S1は前記シグナル値であり、OBは前記光学ブランク値であり、Bは許容可能な測定誤差の上限値(%)である。]
The control unit irradiates the prism with light for attenuating the light amount of the autofluorescence until the attenuation rate A of the light amount of the autofluorescence emitted from the prism satisfies the following formula (1). The measuring device according to claim 7 or 8, which controls the light irradiation unit.
Figure JPOXMLDOC01-appb-M000002
[In Formula (1), S1 is the said signal value, OB is the said optical blank value, B is the upper limit (%) of the allowable measurement error. ]
 前記制御部は、前記光学ブランク値の測定を2回行うように前記光照射部および前記光検出部を制御し、
 前記処理部は、前記光検出部による前記光学ブランク値の測定結果に基づいて、前記自家蛍光の光量の減衰率Aが下記の式(1)を満たしていることを確認する、
 請求項7~9のいずれか一項に記載の測定装置。
Figure JPOXMLDOC01-appb-M000003
[式(1)において、S1は前記シグナル値であり、OBは前記光学ブランク値であり、Bは許容可能な測定誤差の上限値(%)である。]
The control unit controls the light irradiation unit and the light detection unit to perform the measurement of the optical blank value twice,
The processing unit confirms that the attenuation rate A of the light amount of the autofluorescence satisfies the following formula (1) based on the measurement result of the optical blank value by the light detection unit.
The measuring apparatus according to any one of claims 7 to 9.
Figure JPOXMLDOC01-appb-M000003
[In Formula (1), S1 is the said signal value, OB is the said optical blank value, B is the upper limit (%) of the allowable measurement error. ]
 前記制御部は、前記自家蛍光の光量を減衰させるために照射される光の前記測定チップ内の光路が、前記光学ブランク値および前記蛍光値を測定するために照射される励起光の前記測定チップ内の光路と重複するように前記光照射部を制御する、請求項7~10のいずれか一項に記載の測定装置。 The control unit has an optical path in the measurement chip of light irradiated to attenuate the amount of the autofluorescence, and the measurement chip of excitation light irradiated to measure the optical blank value and the fluorescence value. The measuring apparatus according to any one of claims 7 to 10, wherein the light irradiation unit is controlled so as to overlap with an optical path inside.  前記制御部は、前記自家蛍光の光量を減衰させるために照射される光のパワーが、前記光学ブランク値および前記蛍光値を測定するために照射される励起光のパワーより高くなるように前記光照射部を制御する、請求項7~11のいずれか一項に記載の測定装置。 The controller controls the light so that the power of light emitted to attenuate the amount of autofluorescence is higher than the power of excitation light irradiated to measure the optical blank value and the fluorescence value. The measuring apparatus according to any one of claims 7 to 11, which controls the irradiation unit.  被測定物質を標識する蛍光物質が、表面プラズモン共鳴に基づく局在場光により励起されて放出した蛍光を検出して、前記被測定物質の存在または量を測定する測定方法に使用される測定チップであって、
 誘電体である樹脂からなるプリズムと、
 前記プリズムの一面上に配置された金属膜と、
 を有し、
 前記蛍光を検出する時に前記金属膜に照射する励起光と同じ照射エネルギーの光を前記プリズムに連続して2回照射したときに、前記プリズムから放出される自家蛍光の光量の減衰率が1%以下である、
 測定チップ。
A measuring chip used in a measuring method for detecting the fluorescence emitted by a fluorescent substance that labels a substance to be measured, excited by localized field light based on surface plasmon resonance and measuring the presence or amount of the substance to be measured Because
A prism made of resin as a dielectric,
A metal film disposed on one surface of the prism;
Have
When the prism is irradiated twice with light having the same irradiation energy as the excitation light that irradiates the metal film when detecting the fluorescence, the attenuation rate of the amount of autofluorescence emitted from the prism is 1%. Is
Measuring chip.
 前記励起光および前記光の照射エネルギーは、22.6mW・秒/mmである、請求項13に記載の測定チップ。 The irradiation energy of the excitation light and the light is 22.6MW · sec / mm 2, measuring chip according to claim 13.  光を照射されることにより、前記自家蛍光の光量を減衰された、請求項13または請求項14に記載の測定チップ。 The measurement chip according to claim 13 or 14, wherein the amount of the autofluorescence is attenuated by being irradiated with light.
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