WO2016036790A3 - Pattern edge placement predictor and monitor for lithographic exposure tool - Google Patents
Pattern edge placement predictor and monitor for lithographic exposure tool Download PDFInfo
- Publication number
- WO2016036790A3 WO2016036790A3 PCT/US2015/048037 US2015048037W WO2016036790A3 WO 2016036790 A3 WO2016036790 A3 WO 2016036790A3 US 2015048037 W US2015048037 W US 2015048037W WO 2016036790 A3 WO2016036790 A3 WO 2016036790A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- image
- exposure
- field
- maps
- factors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/70—Determining position or orientation of objects or cameras
- G06T7/73—Determining position or orientation of objects or cameras using feature-based methods
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Theoretical Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Method and system for predicting and monitoring locations of edges of an image of the reticle pattern on the wafer in a lithographic exposure process based on factors affecting optical imaging and factors affecting image placement of the exposure field of the scanner. Optical imaging factors are defined based on relationships between defocus of image formation, exposure dose, critical dimensions, and image shift values. Image placement factors are defined based on field overlay capability of the system. The method includes at least one exposure run to determine operational characteristics of the scanner, creating of defocus and dose maps and image field overlay maps, resulting in formation of intra- field and across wafer pattern edge placement maps.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/014,677 US10018922B2 (en) | 2014-09-02 | 2016-02-03 | Tuning of optical projection system to optimize image-edge placement |
| US16/014,399 US10345715B2 (en) | 2014-09-02 | 2018-06-21 | Pattern-edge placement predictor and monitor for lithographic exposure tool |
| US16/417,210 US10488763B2 (en) | 2014-09-02 | 2019-05-20 | Pattern-edge placement predictor and monitor for lithographic exposure tool |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462044777P | 2014-09-02 | 2014-09-02 | |
| US62/044,777 | 2014-09-02 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US15/014,677 Continuation-In-Part US10018922B2 (en) | 2014-09-02 | 2016-02-03 | Tuning of optical projection system to optimize image-edge placement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2016036790A2 WO2016036790A2 (en) | 2016-03-10 |
| WO2016036790A3 true WO2016036790A3 (en) | 2016-06-02 |
Family
ID=55440484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2015/048037 Ceased WO2016036790A2 (en) | 2014-09-02 | 2015-09-02 | Pattern edge placement predictor and monitor for lithographic exposure tool |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2016036790A2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080013089A1 (en) * | 2004-08-31 | 2008-01-17 | Nikon Corporation | Positioning method, processing system, measurement method of substrate loading repeatability, position measurement method, exposure method, substrate processing apparatus, measurement method, and measurement apparatus |
| US20120331427A1 (en) * | 2011-06-23 | 2012-12-27 | Nikon Precision Inc. | In-situ scanner exposure monitor |
| US20140233025A1 (en) * | 2004-08-16 | 2014-08-21 | Asml Netherlands B.V. | Method and Apparatus for Angular-Resolved Spectroscopic Lithography Characterization |
-
2015
- 2015-09-02 WO PCT/US2015/048037 patent/WO2016036790A2/en not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140233025A1 (en) * | 2004-08-16 | 2014-08-21 | Asml Netherlands B.V. | Method and Apparatus for Angular-Resolved Spectroscopic Lithography Characterization |
| US20080013089A1 (en) * | 2004-08-31 | 2008-01-17 | Nikon Corporation | Positioning method, processing system, measurement method of substrate loading repeatability, position measurement method, exposure method, substrate processing apparatus, measurement method, and measurement apparatus |
| US20120331427A1 (en) * | 2011-06-23 | 2012-12-27 | Nikon Precision Inc. | In-situ scanner exposure monitor |
| US20130339910A1 (en) * | 2011-06-23 | 2013-12-19 | Nikon Precision Inc. | In-situ scanner exposure monitor |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016036790A2 (en) | 2016-03-10 |
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| 122 | Ep: pct application non-entry in european phase |
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