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WO2016024615A1 - Film stratifié, film de câblage stratifié, et procédé de fabrication d'un film de câblage stratifié - Google Patents

Film stratifié, film de câblage stratifié, et procédé de fabrication d'un film de câblage stratifié Download PDF

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Publication number
WO2016024615A1
WO2016024615A1 PCT/JP2015/072847 JP2015072847W WO2016024615A1 WO 2016024615 A1 WO2016024615 A1 WO 2016024615A1 JP 2015072847 W JP2015072847 W JP 2015072847W WO 2016024615 A1 WO2016024615 A1 WO 2016024615A1
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Prior art keywords
film
laminated
alloy
oxide
transparent conductive
Prior art date
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Ceased
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PCT/JP2015/072847
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English (en)
Japanese (ja)
Inventor
悠人 歳森
野中　荘平
齋藤　淳
弘実 中澤
石井　博
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Publication of WO2016024615A1 publication Critical patent/WO2016024615A1/fr
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

Definitions

  • the present invention relates to a laminated film applicable to, for example, a transparent conductive film for a display or a touch panel, a laminated wiring film comprising the laminated film, and a method for producing the laminated wiring film.
  • a laminated film applicable to, for example, a transparent conductive film for a display or a touch panel, a laminated wiring film comprising the laminated film, and a method for producing the laminated wiring film.
  • a transparent conductive film as shown in, for example, Patent Document 1-3 is applied as an electrode film or a wiring film.
  • the transparent conductive film is required to have a high light transmittance in the visible light region (hereinafter referred to as luminous transmittance) and a low electrical resistance.
  • Patent Document 1 a three-layer structure of an In—Sn oxide film, an Ag film, and an In—Sn oxide film is formed under vacuum for the purpose of forming a transparent conductive film with low electrical resistance.
  • a transparent conductive film obtained by heat treatment at ⁇ 500 ° C. is disclosed.
  • Patent Document 2 for the purpose of obtaining a transparent conductive film at a low cost without using a rare metal such as In, an amorphous film provided on both surfaces of the metal film containing Ag and the metal film is disclosed.
  • a transparent conductive film that includes a high-quality Zn—Sn—O-based oxide film and has a Sn content of 10 to 90 atomic% with respect to the total of Sn and Zn.
  • Patent Document 3 a first antireflection layer, a metal layer, and a second antireflection layer are sequentially laminated for the purpose of improving water resistance and preventing corrosion deterioration.
  • a transparent conductive film made of a silver alloy containing 0.2 to 3.0 by weight of palladium is disclosed.
  • Japanese Laid-Open Patent Publication No. 07-114842 A
  • Japanese Patent No. 496786 B
  • Japanese Unexamined Patent Publication No. 09-283866 A
  • the transparent conductive film described in Patent Document 1 it is difficult to achieve both low electrical resistance and high luminous transmittance. Moreover, since the wettability is low, there is a problem that Ag tends to aggregate in the Ag film, and the environmental resistance deteriorates quickly. Further, in the transparent conductive film described in Patent Document 2, since In is not used, wettability is reduced, Ag is easily aggregated in a metal film containing Ag, and there is a problem that environmental resistance is quickly deteriorated. there were. Furthermore, in the transparent conductive film described in Patent Document 3, the luminous transmittance is about 60%, and there is a problem that the improvement in visibility is limited. Further, since there is no effect of improving wettability, it is difficult to improve environmental resistance. In particular, recently, the transparent conductive film has been required to further improve the luminous transmittance and lower the electric resistance, and the transparent conductive film disclosed in Patent Documents 1 to 3 cannot be used.
  • the present invention has been made in view of the above-described circumstances, and has a low electrical resistance and a high luminous transmittance and is excellent in environmental resistance, and a laminated wiring film and a laminated wiring made of this laminated film. It aims at providing the manufacturing method of a film
  • a laminated film which is one embodiment of the present invention provided to solve the above problems includes an Ag alloy film and a transparent conductive oxide laminated on the Ag alloy film.
  • the Ag alloy film has a total of 0.1 atomic percent or more and 10.0 atomic percent of any one or two or more elements of Sn, In, and Mg as additive elements. It is included in the following range, and the balance is made of Ag and inevitable impurities.
  • the Ag alloy film has a total of 0.1 atomic% or more and 10.0 atomic% of any one element or two or more elements of Sn, In, and Mg as additive elements. Since the remainder is comprised of Ag and inevitable impurities, the wettability of the Ag alloy film can be improved. Thereby, aggregation of a film
  • membrane can be suppressed, an electrical resistance can be made low, and a luminous transmittance can be improved. Moreover, environmental resistance can be improved and the characteristic as a transparent conductive film can be maintained.
  • the Ag alloy film further contains one or both of Sb: 0.01 atomic% or more and Cu: 0.1 atomic% or more as an additive element,
  • the total of the additive elements is preferably 10.0 atomic% or less.
  • Ti: 0.1 atomic% or more is further included as an additive element, and the total of all additive elements is 10.0 atomic% or less.
  • the total of all additive elements is 10.0 atomic% or less.
  • the luminous transmittance in the visible light region of the laminated film is preferably 70% or more. In this case, it can apply to various displays and a touch panel as a transparent conductive film excellent in visibility.
  • the sheet resistance of the laminated film is preferably 40 ⁇ / ⁇ ( ⁇ / sq.) Or less. In this case, it can apply to the electrode film and wiring film of various displays and a touch panel as a transparent conductive film excellent in electroconductivity.
  • the Ag alloy film preferably has a thickness in the range of 4 nm to 10 nm.
  • the thickness of the Ag alloy film is set to 4 nm or more, the electrical resistance can be reliably lowered and the conductivity can be ensured.
  • the thickness of the Ag alloy film is 10 nm or less, the luminous transmittance can be improved with certainty.
  • the laminated film of the present invention may have a structure in which the transparent conductive oxide film is laminated on one side and the other side of the Ag alloy film.
  • the transparent conductive oxide film is formed on one side and the other side of the Ag alloy film, the environmental resistance can be further improved.
  • the transparent conductive oxide film includes In—Sn oxide, Al—Zn oxide, In—Zn oxide, Zn—Sn oxide, Zn—Sn—Al oxide, Ga— One or more of Zn oxide, Zn—Y oxide, and Ga—Zn—Y oxide are included.
  • the transparent conductive oxide film is composed of the above-described transparent conductive oxide, conductivity and luminous transmittance in the transparent conductive oxide film are ensured, electric resistance is low, and A laminated film having a high luminous transmittance can be formed.
  • a laminated wiring film which is another embodiment of the present invention (hereinafter referred to as “laminated wiring film of the present invention”) is composed of the above-described laminated film and has a wiring pattern. According to the laminated wiring film having this configuration, since it is composed of the above-described laminated film, it has low electrical resistance and high luminous transmittance and is excellent in environmental resistance.
  • a method for manufacturing a laminated wiring film according to another aspect of the present invention is a method for manufacturing the above-described laminated wiring film, which is formed A resist film forming step for forming a patterned resist film, and a multilayer film formation for forming a multilayer film including an Ag alloy film and a transparent conductive oxide film on the film formation surface of the substrate on which the resist film is formed And a resist removing step for removing the resist film.
  • a pattern is formed by etching after forming a laminated film.
  • the above-mentioned laminated film has a structure in which an Ag alloy film and a transparent conductive oxide film are laminated, and it is difficult to match the etching rates of the Ag alloy film and the transparent conductive oxide film. Therefore, problems such as over-etching of the Ag alloy film and generation of a residue of the transparent conductive oxide film occur. Therefore, in the method for manufacturing a laminated wiring film of the present invention, a resist film is formed in a pattern on the film forming surface of the substrate, and the laminated film is formed on the film forming surface of the substrate on which the resist film is formed. It was.
  • the laminated film remains only in the region where the resist film was not formed, and it is possible to form a laminated wiring film having a wiring pattern. Become. For this reason, it is not necessary to perform an etching process, and a wiring pattern can be formed with high accuracy.
  • a laminated film having low electrical resistance and high luminous transmittance and excellent in environmental resistance a laminated wiring film comprising the laminated film, and a method for producing the laminated wiring film.
  • Test No. 10 is an observation photograph of a wiring pattern in 101.
  • Test No. 10 is an observation photograph of a wiring pattern in 102.
  • Test No. 10 is an observation photograph of a wiring pattern in 102.
  • the laminated film 10 in this embodiment is used as a transparent conductive film for various displays and touch panels.
  • a laminated film 10 according to this embodiment is shown in FIG.
  • the laminated film 10 includes, for example, an Ag alloy film 11 formed on one surface of a substrate 21 and a transparent conductive oxide film 12 formed on the Ag alloy film 11.
  • the Ag alloy constituting the Ag alloy film 11 contains any one or two or more elements of Sn, In, and Mg as additive elements in the range of 0.1 atomic% to 10.0 atomic% in total, and the balance Is composed of Ag and inevitable impurities.
  • Inevitable impurities include, for example, 500 ppm or less of Fe, Pb, Bi, Al, Zn, and the like.
  • Sn, In, and Mg contained in the Ag alloy constituting the Ag alloy film 11 are elements having an effect of improving the wettability of the Ag alloy film 11. Moreover, it has the effect of further improving the adhesion between the Ag alloy film 11 and the transparent conductive oxide film 12.
  • Sn, In, and Mg are elements that greatly increase the electrical resistance. Therefore, if any one or more of Sn, In, and Mg exceeds 10.0 at. There is a possibility that the conductivity becomes worse due to an increase. For this reason, in this embodiment, the contents of Sn, In, and Mg that are additive elements are defined within a range of 0.1 atomic% to 10.0 atomic% in total.
  • the Ag alloy constituting the Ag alloy film 11 may further contain Sb and Cu as additive elements.
  • Sb and Cu are elements having an effect of further improving the environmental resistance by suppressing Ag aggregation of the Ag alloy film 11 without greatly reducing the luminous transmittance and without greatly increasing the resistance. is there.
  • Sb is less than 0.01 atomic% and Cu is less than 0.1 atomic%, the above-described effects may not be sufficiently achieved.
  • Sb and Cu are elements that greatly increase the resistance as well as Sn, In, and Mg.
  • the sum total of content of Sn, In, Mg, Sb, Cu which is an addition element is set to 10 atomic% or less.
  • the Ag alloy constituting the Ag alloy film 11 may further contain Ti as an additive element.
  • Ti By adding Ti, resistance to chemicals is improved. Specifically, the sulfur resistance and chlorine resistance of the Ag alloy film 11 can be improved.
  • Ti when Ti is less than 0.1 atomic%, there is a possibility that the above-described effects cannot be sufficiently achieved. For this reason, in the present embodiment, when Ti is added, the Ti content is set to 0.1 atomic% or more.
  • Ti is an element that greatly increases the resistance as well as Sn, In, Mg, Cu, and Sb. For this reason, in this embodiment, when adding Ti, the total content of Sn, In, Mg, Sb, Cu, and Ti as additive elements is set to 10 atomic% or less.
  • the Ag alloy film 11 has a thickness in the range of 4 nm to 10 nm.
  • the thickness of the Ag alloy film 11 is less than 4 nm, aggregation of Ag is promoted, and there is a possibility that conductivity and environmental resistance are lowered.
  • the thickness of the Ag alloy film 11 exceeds 10 nm, the luminous transmittance may decrease.
  • the thickness of the Ag alloy film 11 is set within a range of 4 nm or more and 10 nm or less.
  • the transparent conductive oxide constituting the transparent conductive oxide film 12 includes In—Sn oxide (ITO), Al—Zn oxide (AZO), In—Zn oxide (IZO), and Zn—Sn oxide (ZTO).
  • the thickness of the transparent conductive oxide film 12 is preferably 20 nm or more and 40 nm or less. When the thickness of the transparent conductive oxide film 12 is less than 20 nm, the conductivity as the conductive film may not be maintained. On the other hand, when the thickness of the transparent conductive oxide film 12 exceeds 40 nm, there is a possibility that the light transmittance is lowered.
  • the laminated film 10 according to the present embodiment has a luminous transmittance in the visible light region of 70% or more.
  • the laminated film 10 according to the present embodiment has a sheet resistance of 40 ⁇ / ⁇ or less.
  • the manufacturing method of the laminated film 10 which is this embodiment is demonstrated.
  • the Ag alloy film 11 and the transparent conductive oxide film 12 are formed by sputtering, respectively.
  • an Ag alloy sputtering target used when forming the Ag alloy film 11 will be described.
  • the composition of this Ag alloy sputtering target is adjusted according to the composition of the Ag alloy film 11 to be formed.
  • the Ag alloy sputtering target in the present embodiment is manufactured as follows. As raw materials, Ag having a purity of 99.9% by mass or more and Sn, In, Mg, Sb, Cu, Ti having a purity of 99.9% by mass or more are prepared. Next, Ag is melted in a high vacuum or inert gas atmosphere in a melting furnace, and a predetermined amount of Sn, In, Mg, Sb, Cu, Ti is added to the resulting molten metal. Then, it melt
  • the melting of Ag is performed in an atmosphere in which the atmosphere inside the melting furnace is once evacuated and then replaced with Ar, and after melting, Sn, In, Mg, Sb, Cu, It is preferable to add Ti.
  • Sn, In, Mg, Sb, Cu, and Ti may be added in the form of a mother alloy prepared in advance. After the obtained Ag alloy ingot is cold-rolled, it is subjected to heat treatment at 600 ° C. for 2 hours in the atmosphere, and then machined to produce an Ag alloy sputtering target having a predetermined size.
  • an Ag alloy sputtering target is soldered to a backing plate made of oxygen-free copper, and this is mounted on a DC magnetron sputtering apparatus.
  • the substrate is disposed opposite to the Ag alloy sputtering target and at a predetermined interval.
  • Ar gas is introduced to obtain a predetermined sputtering gas pressure, A 50 W direct current sputtering power is applied.
  • plasma is generated between the substrate 21 and the Ag alloy sputtering target, and the Ag alloy film 11 is formed on the substrate 21.
  • the laminated film 10 which is this embodiment is obtained.
  • the Ag alloy constituting the Ag alloy film 11 is a total of any one or more of Sn, In, and Mg as additive elements. Therefore, the wettability of the Ag alloy film 11 can be improved. Thereby, aggregation of a film
  • membrane can be suppressed and an electrical property (conductivity) and an optical characteristic (luminous transmittance) can be improved. Moreover, environmental resistance can be improved and the characteristic as a transparent conductive film can be maintained. Moreover, in this embodiment, since Ag alloy which comprises the Ag alloy film 11 contains Sb and Cu as additive elements, film aggregation is suppressed and it becomes possible to further improve environmental resistance.
  • the luminous transmittance in the visible light region is 70% or more and the sheet resistance is 40 ⁇ / ⁇ or less, so that the visibility and conductivity are excellent.
  • the transparent conductive film can be applied to various displays and touch panels.
  • the laminated wiring film 30 and the method for manufacturing the laminated wiring film 30 according to the embodiment of the present invention will be described with reference to FIGS.
  • the laminated wiring film 30 according to the present embodiment is obtained by forming a wiring pattern on the laminated film 10 shown in FIG. 1.
  • the laminated wiring film 30 is manufactured as follows. First, a resist film 41 is formed on the film formation surface of the substrate 21, and the resist film 41 is exposed and developed to form an inverted pattern in which the wiring pattern is inverted (resist film forming step S01). Next, the Ag alloy film 11 and the transparent conductive oxide film 12 are formed by sputtering on the substrate 21 on which the resist film 41 having the reverse pattern is formed. Thereby, the laminated film 10 is formed on the resist film 41 and the substrate 21 (laminated film forming step S02). Next, the resist film 41 is removed (resist film removal step S03). Then, the laminated film 10 formed on the resist film 41 having the inverted pattern is removed, and a laminated wiring film 30 having a wiring pattern is formed.
  • the laminated wiring film 30 and the manufacturing method of the laminated wiring film 30 having this configuration it is not necessary to perform etching when forming the wiring pattern, so that the etching rate of the Ag alloy film 11 and the transparent conductive oxide film 12 is increased.
  • the overetching of the Ag alloy film 11 and the generation of the residue of the transparent conductive oxide film 12 due to the difference can be suppressed, and the wiring pattern can be formed with high accuracy.
  • the Ag alloy film 11 and the transparent conductive oxide film 12 are formed in this order on one surface of the substrate 21, but not limited thereto, the transparent conductive material is formed on one surface of the substrate 21.
  • the oxide film 12 and the Ag alloy film 11 may be formed in this order.
  • a laminated film 110 in which transparent conductive oxide films 112 ⁇ / b> A and 112 ⁇ / b> B are formed on one side and the other side of the Ag alloy film 111 may be used.
  • the environmental resistance can be further improved.
  • the transparent conductive oxide film 112A and the transparent conductive oxide film 112B may be formed of transparent conductive oxides having different compositions.
  • an Ag alloy film and a transparent conductive oxide film may be laminated in an arbitrary number of four or more layers.
  • the laminated wiring film of the present invention may also be formed using the laminated films having various structures described above.
  • Laminated films having the structures shown in Tables 1 to 3 were produced as follows.
  • the Ag alloy sputtering target used when forming the Ag alloy film was manufactured by the manufacturing method described in this embodiment.
  • the target size was 4 inches ⁇ ⁇ 6 mmt.
  • the following transparent conductive oxide sputtering targets were used.
  • ITO In and Sn oxide sintered compact target containing 10 atomic% of Sn with respect to the sum of In and Sn.
  • IZO In and Zn oxide sintered compact target containing 30 atomic% of Zn with respect to the sum of In and Zn.
  • ZTO Zn and Sn oxide sintered compact target containing 50 atomic% of Sn with respect to the total of Zn and Sn.
  • AZO Zn and Al oxide sintered compact target containing 2 atomic% of Al with respect to the total of Zn and Al.
  • AZTO an oxide sintered compact target of Zn, Al and Sn containing 2 atomic% of Al and 10 atomic% of Sn with respect to the total of Zn, Al and Sn.
  • GZO An oxide sintered compact target of Ga and Zn containing 2 atomic% of Ga with respect to the sum of Ga and Zn.
  • ZYO Zn and Y oxide sintered compact target containing 20 atomic% of Y with respect to the total of Zn and Y.
  • GZYO An oxide sintered compact target of Ga, Zn and Y containing 2 atomic% Ga and 20 atomic% Y with respect to the total of Ga, Zn and Y.
  • an Ag alloy film and a transparent conductive oxide film were formed as follows.
  • the film stacking order is as described in Tables 1 to 3 as the film structure.
  • Tables 4 to 9 show the measurement results of the respective evaluation items of the inventive examples and the comparative examples.
  • ⁇ Film thickness measurement> It confirmed by observing the cross section of a film
  • TEM transmission electron microscope
  • a cross section polisher (CP) or a focused ion beam (FIB) can be used.
  • the surface resistance was measured by a four-probe method using a surface resistance measuring instrument (Loresta AP MCP-T400, manufactured by Mitsubishi Yuka Co., Ltd.).
  • ⁇ Measurement of luminous transmittance> Using a spectrophotometer (Hitachi High-Tech U-4100 model), the transmittance spectrum is measured in the wavelength range of 780 to 380 nm, and a color calculation program (conforming to JIS-Z-8722) is used to determine the light source. The Y value of the XYZ color system at D65 and a visual field of 2 ° was calculated, and the calculated value was used as the luminous transmittance.
  • Chlorine resistance test> The film formation sample was immersed in a 5% NaCl aqueous solution at room temperature for 10 days, taken out from the aqueous solution and thoroughly washed with pure water, and then dried air was sprayed to remove moisture. About these samples, sheet resistance and the transmittance
  • the sheet resistance was 40 ⁇ / ⁇ or less, and it was confirmed that a low resistance laminated film was obtained.
  • the luminous transmittance was 70% or more, and it was confirmed that a laminated film having excellent luminous transmittance was obtained.
  • the sheet resistance after the constant temperature and humidity test has a rate of change within the range of ⁇ 20% to + 30%, and it was confirmed that the sheet resistance after the constant humidity test did not change significantly.
  • the luminous transmittance after the constant temperature and humidity test was within a range of 0.1% to 5%, and it was confirmed that the luminous transmittance after the constant humidity test did not change significantly. It was confirmed that the inventive examples 50 to 53 to which Ti was added were excellent in sulfur resistance and chlorine resistance.
  • Comparative Examples 2, 4, 6, 8, 9, 10, and 12 all of the sheet resistances were 40 ⁇ / ⁇ or more. Further, in Comparative Examples 1, 3, 5, 7, and 11, the sheet resistance change rate after the constant temperature and humidity test was greatly deteriorated to + 44% to + 206%. Further, in Comparative Examples 1, 3, 5, and 7, the luminous transmittance was less than 70%. Further, the luminous transmittance after the constant temperature and humidity test was less than 70% in Comparative Examples 1, 3, 5, 7, and 11. In Comparative Examples 1, 3, 5, 7, and 11, the change rate of the luminous transmittance after the constant humidity test was greatly deteriorated to + 9.9% to + 14.2%.
  • Test No. in 102 the laminated films shown in Examples 40 to 49 and 54 to 59 of the present invention were formed on the substrate by sputtering. Next, a resist wiring pattern was formed on the laminated film by photolithography. Finally, the laminated film was etched at once using an acidic solution as an etchant. Etching was performed under the condition of 180 seconds at 40 ° C. using oxalic acid as an etchant. As a result of observing the laminated wiring film, the residue of the transparent conductive oxide film and the over-etching of the Ag alloy film were confirmed. 7A and 7B show the observation results of the laminated wiring film to which the laminated film of Inventive Example 41 is applied. In FIG. 7A, overetching of the Ag alloy film is confirmed as a white line. Moreover, in FIG. 7B, the residue of a transparent conductive oxide film is confirmed as a discontinuous white line.

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Abstract

　L'invention concerne un film stratifié possédant une faible résistance électrique, un facteur élevé de transmission lumineuse et une excellente résistance à l'environnement. Ce film stratifié (10) comprend un film d'alliage d'Ag (11) et un film d'oxyde électro-conducteur transparent (12) stratifié sur le film d'alliage d'Ag (11) ; ce film stratifié (10) est caractérisé en ce que le film d'alliage d'Ag (11) contient au moins un élément Sn, In ou Mg en tant qu'élément supplémentaire, la teneur de cet élément se situant à l'intérieur d'une plage de 0,1 à 10,0 % (base atomique) au total, le reste se composant d'Ag et d'impuretés inévitables.
PCT/JP2015/072847 2014-08-12 2015-08-12 Film stratifié, film de câblage stratifié, et procédé de fabrication d'un film de câblage stratifié Ceased WO2016024615A1 (fr)

Applications Claiming Priority (4)

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JP2014-164051 2014-08-12
JP2014164051 2014-08-12
JP2015158449A JP2016040411A (ja) 2014-08-12 2015-08-10 積層膜、積層配線膜及び積層配線膜の製造方法
JP2015-158449 2015-08-10

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WO2017164209A1 (fr) * 2016-03-23 2017-09-28 三菱マテリアル株式会社 Film conducteur transparent stratifié, film de câblage stratifié, et procédé de fabrication d'un film de câblage stratifié
JP2017179594A (ja) * 2016-03-23 2017-10-05 三菱マテリアル株式会社 積層透明導電膜、積層配線膜及び積層配線膜の製造方法
CN108886857A (zh) * 2016-03-23 2018-11-23 三菱综合材料株式会社 层叠反射电极膜、层叠反射电极图案及层叠反射电极图案的制造方法
CN114630919A (zh) * 2019-11-15 2022-06-14 三菱综合材料株式会社 层叠结构体

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WO2017131183A1 (fr) * 2016-01-28 2017-08-03 三菱マテリアル株式会社 Film conducteur transparent multicouche, film de câblage multicouche et procédé de fabrication de film de câblage multicouche
JP6729344B2 (ja) * 2016-12-20 2020-07-22 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲットおよびＡｇ合金膜
JP2019131850A (ja) * 2018-01-30 2019-08-08 三菱マテリアル株式会社 積層膜、及び、Ａｇ合金スパッタリングターゲット
EP3795713A4 (fr) 2018-05-17 2022-03-16 Mitsubishi Materials Corporation Film multicouche et cible de pulvérisation en alliage d'ag
JP2019203194A (ja) 2018-05-17 2019-11-28 三菱マテリアル株式会社 積層膜、及び、Ａｇ合金スパッタリングターゲット
JP2020125533A (ja) 2019-02-06 2020-08-20 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金膜
JP6853458B2 (ja) 2019-02-06 2021-03-31 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金膜

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CN108886857B (zh) * 2016-03-23 2021-04-02 三菱综合材料株式会社 层叠反射电极膜、层叠反射电极图案及层叠反射电极图案的制造方法
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CN108885922B (zh) * 2016-03-23 2021-10-08 三菱综合材料株式会社 层叠透明导电膜、层叠布线膜及层叠布线膜的制造方法
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TWI771293B (zh) * 2016-03-23 2022-07-21 日商三菱綜合材料股份有限公司 層合透明導電膜、層合配線膜及層合配線膜之製造方法
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