WO2016012038A1

WO2016012038A1 - Target arrangement, processing apparatus therewith and manufacturing method thereof

Info

Publication number: WO2016012038A1
Application number: PCT/EP2014/065739
Authority: WO
Inventors: Frank Schnappenberger
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2014-07-22
Filing date: 2014-07-22
Publication date: 2016-01-28
Anticipated expiration: 2017-01-22
Also published as: KR101913791B1; CN206858649U; TW201617469A; KR20170039218A

Abstract

A target arrangement (100; 101; 102; 103; 104; 106) for a processing apparatus (105; 107) is described. The target arrangement includes a target support (110) configured for supporting a non-planar target material (120), wherein the target support (110) includes a vacuum side (130) and an atmospheric side (140). Further, a processing apparatus adapted for a target arrangement and a method for manufacturing a target arrangement are described.

Description

TARGET ARRANGEMENT, PROCESSING APPARATUS THEREWITH AND

MANUFACTURING METHOD THEREOF

TECHNICAL FIELD OF THE INVENTION

[0001] Embodiments of the present invention relate to a target arrangement and a processing apparatus with a target arrangement. Embodiments of the present invention particularly relate to a target arrangement for a vacuum processing apparatus and a vacuum processing apparatus with a target arrangement, specifically to a target arrangement for a sputter apparatus and a sputter apparatus with a target arrangement. Embodiments also relate to a method for manufacturing a target arrangement for a processing apparatus, specifically for a vacuum processing apparatus.

BACKGROUND OF THE INVENTION

[0002] In many applications, layers are deposited on a substrate, e.g. thin layers on a glass substrate. The substrates are often coated in different chambers of a coating apparatus. The substrates may be coated in a vacuum.

[0003] Several methods are known for depositing a material on a substrate. For instance, substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process or a plasma enhanced chemical vapor deposition (PECVD) process etc. The process is performed in a process apparatus or process chamber where the substrate to be coated is located. A deposition material is provided in the apparatus. A plurality of materials, but also oxides, nitrides or carbides thereof, may be used for deposition on a substrate. Coated materials may be used in several applications and in several technical fields. For instance, substrates for displays are often coated by a physical vapor deposition (PVD) process. Further applications include insulating panels, organic light emitting diode (OLED) panels, substrates with thin film transistors (TFT), color filters or the like. [0004] For a PVD process, the deposition material can be present in the solid phase in a target. By bombarding the target with energetic particles, atoms of the target material, i.e. the material to be deposited, are ejected from the target. The atoms of the target material are deposited on the substrate to be coated. In a PVD process, the sputter material, i.e. the material to be deposited on the substrate, may be arranged in different ways. For instance, the target may be made from the material to be deposited or may have a backing element on which the material to be deposited is fixed. The target including the material to be deposited is supported or fixed in a predefined position in a deposition chamber. In the case where a rotatable target is used, the target is connected to a rotating shaft or a connecting element connecting the shaft and the target.

[0005] For example, an easy and quick mounting of the targets in the chamber is desired for decreasing the deposition system down time. Using rotatable targets is beneficial for layer uniformity; however, mounting the rotatable target is effected by accessing the processing chamber, which is time-consuming. In view of the above, it is an object of the present invention to provide a target arrangement, a processing apparatus with a target arrangement and a method for manufacturing a target arrangement that overcome at least some of the problems in the art.

SUMMARY OF THE INVENTION [0006] In light of the above, a target arrangement, a processing chamber and a method for manufacturing a target arrangement according to the independent claims are provided. Further aspects, advantages, and features of the present invention are apparent from the dependent claims, the description, and the accompanying drawings.

[0007] According to one embodiment, a target arrangement for a processing apparatus is provided. The target arrangement includes a target support configured for supporting a non- planar target material. The target support includes a vacuum side and an atmospheric side.

[0008] According to another embodiment, a processing apparatus for processing a substrate is provided. The processing apparatus includes a processing chamber having an outside and an inside, which is adapted for housing the substrate during the process and a substrate support for the substrate to be processed. The processing chamber is adapted for receiving a target arrangement according to embodiments described herein.

[0009] According to a further embodiment, a method for manufacturing a target arrangement to be used in a processing apparatus is provided. The method includes forming a target support configured for supporting a non-planar target material, wherein the target support includes a vacuum side and an atmospheric side. The method further includes providing target material on the target support, the target material having a bent surface at least after being provided on the target support, in particular a surface with a form of an arc of a circle, of an ellipse or a parabola. [0010] Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method step. These method steps may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the invention are also directed at methods by which the described apparatus operates. It includes method steps for carrying out every function of the apparatus.

BRIEF DESCRIPTION OF THE DRAWINGS

[0011] So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the invention and are described in the following:

Fig. la shows a schematic drawing of a target arrangement according to embodiments described herein;

Fig. lb shows a schematic drawing of a target arrangement according to embodiments described herein;

Fig. lc shows a schematic drawing of a target arrangement according to embodiments described herein; Fig. Id shows a schematic drawing of the backside of a target

arrangement according to embodiments described herein;

Fig. 2 shows a schematic drawing of a target arrangement according to embodiments described herein; Fig. 3a shows a schematic drawing of a target arrangement with a magnet assembly according to embodiments described herein;

Fig. 3b shows an enlarged view of a section of the target arrangement shown in Fig. 3a;

Figs. 4a to 4c show a schematic drawing of portions of target arrangements according to embodiments described herein;

Fig. 5a shows a schematic drawing of a processing apparatus including a target arrangement according to embodiments described herein;

Fig. 5b shows a schematic drawing of a side view of the processing apparatus shown in Fig. 5a;

Fig. 5c shows a schematic sectional view of the processing apparatus of Fig. 5a along line A-A;

Fig. 5d shows a schematic drawing of a back view of the processing apparatus shown in Fig. 5a; Fig. 6 shows a schematic drawing of a processing apparatus including a target arrangement according to embodiments described herein;

Fig. 7 shows a flow chart of a method for manufacturing a target arrangement according to embodiments described herein; DETAILED DESCRIPTION OF EMBODIMENTS

[0012] Reference will now be made in detail to the various embodiments of the invention, one or more examples of which are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Generally, only the differences with respect to individual embodiments are described. Each example is provided by way of explanation of the invention and is not meant as a limitation of the invention. Further, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations. [0013] Furthermore, in the following description, a target support may be understood as a as a device for supporting target material, e.g. in a sputter deposition process. In some embodiments, the target support may include at least a portion or a side, which is not subjected to the sputtering process, such as a portion not being sputtered. For instance, a portion of the target support may be adapted not to be worn or removed during a deposition process. In some embodiments, the target support may be connectable to a process chamber, such as a wall of a sputter chamber. According to some embodiments, the target support may include or may be made from the target material.

[0014] According to embodiments described herein, the target support may include an atmospheric side and a vacuum side. In particular, the vacuum side of the target support may be adapted for being used in a vacuum process, such as by choosing the material respectively (e.g. choosing a material having a suitable outgassing rate for a vacuum process, a suitable temperature resistance, a suitable particle generation rate and the like). In some embodiments, the atmospheric side of the target support may be adapted for being used under atmospheric conditions, such as under a pressure of about 1 bar, a temperature range between 0° and 40° and the like. According to some embodiments, the atmospheric side of the target support may be adapted for being provided outside of a process chamber and the vacuum side of the target support may be adapted for being provided inside a process chamber. According to some embodiments, the target support may provide respective connection means for providing the atmospheric side of the target support outside the chamber and the vacuum side of the target support inside the chamber, such as connecting means fixing the target support to or in a wall of the process chamber. [0015] According to embodiments described herein, an arc as referred to herein may be understood as a portion or a segment of a geometrical shape, such as a circular arc being a segment of a circle, an elliptical arc being a segment of an ellipse, and a parabolic arc being a segment of a parabola, and so on. According to some embodiments, the arc may be a segment encompassing an angle of less than 360°. For instance, the length of a circular arc is defined by (0/18O)7t*R, with R being the radius of the circle and Θ being the angle encompassed by the segment of the circle and being smaller than 360°.

[0016] As used herein, the term "non-planar" should be understood as having a curvature, e.g. a non-planar surface having a curvature at least over a portion of the surface. According to some embodiments, the curved surface may be described as being a bent surface.

[0017] In known systems, two types of sputtering targets are used, planar sputtering targets and rotary sputtering target assemblies. Both planar and rotary sputtering target assemblies have their advantages. Due to the geometry and design of the cathodes, rotatable targets typically have a higher utilization and an increased operation time than planar ones. Rotary sputtering target assemblies may be particularly beneficial in large area substrate processing. Bonding a cylindrical target tube to a backing tube is a challenge in the fabrication of rotary target assemblies. Bonding a cylindrical target tube to a backing tube being a challenge is particularly true for large target materials. In the manufacture of such rotatable sputtering cathodes, the target material may, for example, be applied by spraying, casting or pressing of powder onto the outer surface of a backing tube. Alternatively, a hollow cylinder of a target material, which may also be referred to as a target tube, may be arranged on and bonded, e.g. with indium, to the backing tube for forming a rotatable target. However, due to the geometry of the rotatable targets and for enabling the higher target utilization mentioned above, the rotatable targets are designed for being completely provided in vacuum conditions during the use of the rotatable targets in a processing chamber for processing substrates.

[0018] Embodiments described herein provide a target arrangement for a processing apparatus. The target arrangement includes a target support configured for supporting a non- planar target material. The target support includes a vacuum side and an atmospheric side.

[0019] The target arrangement according to embodiments described herein helps in facilitating the manufacturing process of the target as will be described in detail below. Further, the target arrangement according to embodiments described herein may be mounted to a process chamber in an easy and cost-efficient way since the non-planar target can be provided from an outside side of the process chamber, such as by being mounted into or onto a chamber door or wall. [0020] Fig. la shows a target arrangement according to embodiments described herein. The target arrangement 100 includes a target support 110 and a target material 120. The target support 110 is adapted for supporting the non-planar target material 120. In the embodiment shown in Fig. la, the target support 110 includes a plate-like basis 111, a side support 112 extending along the length of the target 120, and a front support 113 supporting the front end of the target 120. According to some embodiments described herein, the terms "target" and "target material" are used synonymously herein.

[0021] According to some embodiments, at least a portion of the target support may provide a non-planar shape, e.g. a non-planar shape corresponding to the non-planar shape of the target material to be supported by the target support. For instance, the embodiment of Fig. la shows a front support 113 having the shape of an arc corresponding to the shape of the target 120. In some embodiments, the target support may have a portion having the shape of a half cylindrical tube being divided along the length direction, e.g. a backing half tube. For instance, the half cylindrical tube may have a cross-section in the shape of a circular arc encompassing an angle of about 180°.

[0022] As can be seen in Fig. la, the target support 110 provides a vacuum side 130 and an atmospheric side 140. Typically, the vacuum side may be a side of the target being present in the processing chamber, when the target arrangement is mounted to a processing chamber. The atmospheric side of the target support may be provided outside of the processing chamber (or may at least be accessible from the outside of the processing chamber), when the target arrangement is mounted to a processing chamber. According to some embodiments, the atmospheric side of the target support may face the outside of the process chamber, e.g. when the target arrangement according to embodiments described herein is mounted in a process chamber wall. According to some embodiments, the target arrangement may also be described as having an atmospheric side and a vacuum side including the target material. [0023] Fig. lb shows an embodiment of a target arrangement 101. The target arrangement 101 includes a target support 110 including a supporting plate 114. The non-planar target 120 may be provided on the supporting plate 114 of the target support 110. According to some embodiments, the target support may include a half cylindrical tube on which the target material 120 is provided, e.g. a backing half tube. According to alternative embodiments, a target support basis, such as the supporting plate, supports the target material having the shape of a half cylindrical tube without backing half tube. Although Fig. lb shows the half cylindrical tube being closed at the ends of the half cylindrical tube, the front end of the half cylindrical tube may be open in some embodiments. The target support 110 shown in Fig. lb provides a vacuum side 130 and an atmospheric side 140. As will be explained in detail with respect to Fig. Id, the target support may include a hollow portion at the atmospheric side of the target support. According to some embodiments, the hollow portion may be provided by a hole in the plate-like basis (e.g. the supporting plate in Fig. lb) of the target support, or may be provided by a frame as a target support. [0024] The target material of the embodiments described herein may be bonded in an easy and reliable way to the target support. The non-planar shape of the target material, exemplarily shown in the figures as a circular arc shape, allows for using larger forces in the bonding process than the forces, which can be used when a rotary target is produced.

[0025] Fig. lc shows an embodiment of a target arrangement 102. The target arrangement 102 includes a target support 110 and the target 120 being formed in a one-piece target arrangement. For instance, the target support may be made from target material. According to some embodiments, the target support 110 (especially the portion which is not to be sputtered in the process) includes a plate-like structure, from which the non-planar target 120 extends.

[0026] According to some embodiments, the atmospheric side of the target support may be provided by one or more sections of the target support, as can exemplarily be seen in the embodiments shown in the figures. For instance, the atmospheric side of the target support may include a plate-like portion, as exemplarily shown in Fig. la, a frame-like portion, parts of a side support as described above, the back side of a plate-like portion, or the back side of a frame, as exemplarily shown in Fig. lb, the back side of a target support being made of the target material, as exemplarily shown in Fig., lc, or the like. In some embodiments, the atmospheric side may be a surface or a portion of the target support having a defined thickness, in particular a thickness, which does not change during the process. In some embodiments, the atmospheric side of the target support may be described as the surface of the target support not facing the inside of the process chamber. In one example, the atmospheric side may extend, or be present at the outside of a process chamber wall. According to some embodiments, the atmospheric side may include a space, which in particular may reach to the back side of the target (such as the side of the target not facing the process chamber). According to some embodiments, the vacuum side of the target support extends to the inside of the process chamber, e.g. by extending from a process chamber wall or by being even with the process chamber wall at the side facing the inside of the process chamber.

[0027] Fig. Id shows a back side view of a target support 110 according to embodiments described herein. The target support 110 may be the target support of any described embodiment, such as the target support shown in Figs, la to lc. According to some embodiments, the back side view of the target support may be denoted as being a view of the atmospheric side of the target support. In some embodiments, the target support 110 being configured for a non-planar target may include a hollow section 115, e.g. for allowing accessing the non-planar target material, sections for connecting the non-planar target, or a frame to which the target material may be bonded and the like. According to some embodiments, the hollow section may allow access to a non-planar (or bent) surface of the target support and/or the target material. In some embodiments, the hollow section may allow access by an opening in the target support, such as a substantially rectangular opening in a supporting plate of the target support. According to some embodiments, the opening may have any suitable shape.

[0028] According to some embodiments, a target support being configured for a non-planar target may be made from a material allowing for bonding the target material to the target support, such as bonding the target material to the target support in a reliable manner for the process conditions (e.g. including pressure, temperature, gas or plasma presence and the like). For instance, the target support may be suitable for being provided at least partially, such as with one side, in the processing chamber having a pressure of about 5*10 -^"4 to about 5*10 -^"2 mbar, e.g. a pressure of about 5*10^" . According to some embodiments, the process temperature or the process chamber temperature, at which the target arrangement may be used, may be up to 600°C. The target support may be suitable for withstanding the process temperatures. In some embodiments, the surface of the target support may be adapted for providing a sufficient bonding between the target material and the target support. For instance, the target support surface may provide a suitable roughness, a suitable temperature conductibility, a sufficient bonding area and the like. [0029] In some embodiments, the target support being configured for a non-planar target may further be configured for providing a magnet assembly for acting as a magnetron for the non-planar target. For instance, the target support may provide or allow having space for housing, at least partially, a magnet assembly, such as a magnetron for sputtering of the target material. In some embodiments, the target support configured for a non-planar target may include connection elements for connecting a magnet assembly for sputtering of the non- planar target, such as clamps, holes, bores, bars, bolts, frames and the like.

[0030] Fig. 2 shows an embodiment of a target arrangement 103 in a view showing the atmospheric side of the target support 110. A hollow section 115 of the target support 110 can be seen in Fig. 2. Fig. 2 shows the contour 116 of the non-planar target being bonded to the target support 110. Alternatively, the contour 116 may belong to a part of the target support having a half cylindrical tube shape and being adapted for providing the target material on the target support. The hollow section 115 of the target support 110 allows for accessing the non- planar target or a respective part of the target support. According to some embodiments, the target support 110 is adapted for housing, at least partially, a magnet assembly 117. In the embodiment shown in Fig. 2, the hollow section 115 allows for housing a magnet assembly 117 at least partially in the target support. The target support may include connecting means 121 for connecting the magnet assembly 117 to the target support. In one embodiment, the magnet assembly is rotatable, in particular rotatable about an axis being substantially parallel to the length axis of the non-planar target. [0031] According to some embodiments described herein, the magnet assembly includes a magnet element having a magnet yoke with two magnet poles of adverse polarity. For instance, one of the magnet poles may surround the other magnet pole forming a racetrack. According to some embodiments, the magnet element includes a basis for supporting the magnet yoke with the magnet poles. In some embodiments, the magnet assembly may oscillate between two positions about a rotational axis, e.g. by wobbling behind the backing half tube. According to some embodiments, the magnet assembly may wobble behind a half backing tube driven by a motor. The magnet assembly may be configured, e.g. by being respectively mounted, for a rotational movement of at least an angle of 30°. In particular, the magnet assembly may be configured for performing the rotational movement along an arc, especially along an arc corresponding to the shape of the non-planar target material. Further embodiments may include a static magnet bar or a magnetic coil.

[0032] According to some embodiments, the target arrangement may include a lifting device for keeping the distance between the magnet element and the target surface (e.g. the target surface facing the substrate to be processed) constant, in particular constant during deposition. For instance, the target arrangement may include a mechanical gear or an eccentric device being driven by a drive element, such as a motor, for moving the magnet assembly towards or away from the non-planar target surface. In one embodiment, the lifting device may automatically be controlled such as for adjusting the distance between the target surface and the magnet assembly automatically, e.g. over the lifetime of the target or even dependent on the lifetime of the target. For instance, the lifting device may help in improving the reliability, the predictability, and the uniformity of target material removal. With improved material removal uniformity, the layer uniformity on the substrate may be optimized.

[0033] Fig. 3a shows a target arrangement 104 according to some embodiments described herein. Fig. 3b shows an enlarged view of a section of the target arrangement 104. The target support 110 includes a frame with an opening 115 in the example shown in Fig. 3a. The target arrangement 104 further includes a non-planar target material 120 being provided on the target support 110. The target arrangement 104 shown in Figs. 3a and 3b includes a magnet assembly including three magnet elements 117, 118, and 119. The magnet elements each include a magnet yoke with magnet poles of adverse polarity in the example shown in Fig. 3b. The magnet elements may at least partially be arranged within the target support 110. According to some embodiments, the magnet assembly is at least partially located within the non-planar target. According to some embodiments, the three magnet elements may be rotatable, especially rotatable about an axis substantially parallel to a length axis of the non- planar target material. In some embodiments, the magnet assembly rotates along an arc, which may correspond to the arc of the non-planar target. According to some embodiments, the magnet assembly may only rotate in one direction. In some embodiments, the magnet assembly is configured for rotating continuously. When rotating continuously, the magnet assembly may provide a magnetic field for the target material, which in particular ensures a uniform deposition of the target material.

[0034] According to some embodiments, the magnet elements of the magnet assembly may be provided on a rotating element, such as a drum, to which the magnet elements are attached. According to some embodiments, the magnet yokes of the three magnet elements are connected to the rotating element, such as being directly connected to a rotating drum (e.g. without a further supporting element for the magnet yokes). In some embodiments, each of the magnet elements includes two magnet poles, in particular, each magnet element includes one magnet pole in the form of a racetrack surrounding the other magnet pole. Fig. 3b shows a section of the target support 110 and the skilled person may understand that the outer magnet poles of each of the magnet yokes surrounding the inner magnet pole may form a closed loop in a total view of the target support. In one example, the three magnet elements are offset from each other by an angle of about 120°. In some embodiments, the magnet elements may be arranged along a line allowing the magnet elements each having substantially the same distance to the target surface in the vacuum chamber, when being rotated to a position facing the target material. In particular, the magnet elements may be arranged along a circle-like line. According to embodiments, which may be combined with other embodiments described herein, the magnet assembly may include more than three magnet elements, such as four or five magnet elements as described above. [0035] In one example, and as can be seen in Fig. 3b, when the magnet assembly is rotated, one or more complete racetracks exist on the non-planar target surface. When one racetrack is leaving the surface of the non-planar target due to the rotation of the magnet assembly, the next racetrack captures the electrons for removing material from the non-planar target. According to some embodiments, a drive for the magnet assembly may be arranged behind the magnet yokes at the atmospheric side of the target arrangement. A direct drive may be used for driving the rotational movement of the magnet assembly. According to some embodiments, the magnet assembly may be driven in atmospheric conditions on the atmospheric side of the target support. In one example, the magnet assembly is driven at a temperature of less than 60°C, such as about 30°C to about 40°C. [0036] In some embodiments, the distance between target surface and magnet assembly may be adjustable. As described with respect to Fig. 2, the target arrangement 104 may be provided with a lifting device for keeping the distance between the non-planar target surface and the magnet assembly constant. For instance, with a mechanic gear or a triple eccentric device, the distance between the target surface and the magnets may be changed.

[0037] By the continuous movement of the magnet assembly, the voltage, current and power supply used for the process may remain constant. With the adjustable magnet assembly, a control or adjustment of the sputter voltage (or current) at one level is possible. Further, several beneficial effects may be achieved by embodiments described herein. In particular, an easy mechanic design may be used for the magnet rotation. An easy mechanic design spares production and mounting costs. The magnet assembly being mounted and operated under atmospheric conditions may help in designing the magnet assembly in an easy way. Further, when the magnet assembly is rotated continuously, there is no delay time due to changing direction of the magnet assembly, such as in the wobble mode. The magnet assembly may be rotated at very high speed according to embodiments described herein. Also, the use of a larger racetrack is possible with embodiments described herein. Further, with embodiments described herein, an influence on the target utilization by various magnet yokes or different lengths behind a cathode etc. may be possible. The process efficiency is increased. The process efficiency (and in particular the sputter rate) may also be increased by having more than one racetrack on the target surface, e.g. when three or four magnet elements are rotated. Theoretically, using the whole surface of the sputter target for the plasma becomes possible.

[0038] Although the drawings show a substantially circular arc for the non-planar target, embodiments described herein are not limited to circular arrangements.

[0039] The term "substantially" as used herein may mean that there may be a certain deviation from the characteristic denoted with "substantially." For instance, the term "substantially circular" refers to a shape which may have certain deviations from the exact circular shape, such as a deviation of about 1% to 15% of the extension in one direction, or in more than one direction. Similarly, the term "substantially elliptical" or substantially parabolic" should be understood as including a deviation from the strict definition of about 1% to 15% in one or more directions. [0040] Figs. 4a to 4c show embodiments of a non-planar target 120 for a target support according to embodiments described herein. Fig. 4a shows a non-planar target 120 having substantially the shape of an arc of an ellipse. For instance, the target includes a cross-section having the shape of an arc of an ellipse, e.g. including a segment of an ellipse. As can be seen in Fig. 4a, the target includes a non-planar outer surface and a non-planar inner surface, the target having a certain thickness. In some embodiments, the shape of the inner surface of the target corresponds to the shape of the outer surface of the target. Fig. 4b shows an embodiment of a non-planar target 120 having a cross-section with the shape of an arc of a parabola. Fig. 4c shows an embodiment of a non-planar target having a first part 121 with a cross-section of a circular arc, and a second section 122 having a substantially straight shape. The skilled person will note that features described with respect to Fig. 4a may also be applied to the embodiments of Figs. 4b and 4c.

[0041] According to some embodiments, the arcs described herein encompass an angle of typically less than 360°, more typically less than 300°, and even more typically of less than 280°. In one embodiment, the angle of the arc may encompass approximately 180°.

[0042] Generally, the non-planar target may include a bent surface. A bent surface may have a curvature and may, in further embodiments, be composed of different curvatures, such as a bent surface being composed of several arcs, each having a different curvature and/or radius. [0043] Fig. 5a shows a process chamber 105 being part of a processing apparatus for processing a substrate. The process chamber includes chamber walls 150, 151, 152, and 153. The chamber walls 150, 151, 152, and 153 separate the inside of the process chamber from the outside of the process chamber. In the inside of the process chamber, a substrate may be held by substrate support 154. According to some embodiments, a substrate support may also be used for guiding a substrate in a continuous process. Typically, the process chamber is adapted for a vacuum process, such as by providing respective sealing devices, a vacuum pump, and respectively adapted sluices for the substrate.

[0044] As can be seen in Fig. 5a, two target arrangements 106 with a non-planar target are provided in the process chamber 105. According to some embodiments, the target arrangements 106 may be target arrangements as described above in embodiments. The processing chamber 105 may be adapted for mounting the target arrangement as described in embodiments herein to the chamber walls, especially a target support. In one example, the processing chamber 105 is adapted for mounting a supporting plate of the target support to the chamber walls, such that the target arrangement may be provided at the processing chamber with an atmospheric side and a vacuum side. According to some embodiments, the processing chamber 105 may have respective openings, in which the target arrangement as described in embodiments herein can be placed. In some embodiments, the target arrangements 106 may be mounted to the process chamber from the outside of the chamber, in particular mounting of the target arrangement is performed in the direction of arrow 160. The chamber according to embodiments described herein may be adapted for mounting the target arrangement from the outside. For mounting the target arrangements, opening or entering of the process chamber is not used (apart from opening the chamber by removing a worn target arrangement). Mounting the target arrangement from the outside of the chamber is particularly beneficial with respect to process efficiency since mounting a new target or exchanging a worn target is easy and uncomplicated and does not use access to the vacuum chamber by a door or the like.

[0045] Fig. 5b is a side view of the process chamber 105 shown in Fig. 5a. Fig. 5b shows the target arrangement 160 including a plate-like basis 112 and the non-planar target 120. In the mounted state of the target arrangement 106, the vacuum side 130 of the target arrangement inside the process chamber 105 and the atmospheric side 140 of the target arrangement outside the process chamber 105 can be seen.

[0046] Fig. 5c shows a sectional view of the process chamber 105 along line A- A as shown in Fig. 5a. For the sake of a better overview, the target arrangement 106 is shown without a magnet assembly in Fig. 5c. The skilled person will understand that the features described above with respect to the magnet assembly may be applied to the target arrangement 106 shown in Figs. 5a to 5d.

[0047] As can be seen in the more detailed view of Fig. 5c, the target arrangement 106 includes a target support 110 which includes a plate-like basis, and a backing element having the shape of a half cylindrical tube. According to some embodiments, the target support 110 may include a hollow section 115, e.g. provided by the half cylindrical tube. [0048] Fig. 5d shows a backside view of the process chamber 105 shown in Fig. 5a. From the backside view, the atmospheric side of the target arrangements 106 in the process chamber 105 can be seen. The target arrangements 106 include a target support 110 and a hollow section 115 in the embodiment shown in Fig. 5d. According to some embodiments, the hollow sections 115 may provide access to the non-planar target or to a backing element (e.g. a half cylindrical tube) for the non-planar target. In one example, a magnet assembly may be present in the hollow section 115 of the target support 110.

[0049] The target arrangement shown in the above described figures provides a target arrangement having a substantially vertical extension. However, the person skilled in the art will recognize that the target arrangements described herein may also be used in a horizontal extension. Fig. 6 shows an example of a process chamber 107 with a target arrangement 108 in a horizontal extension. The target arrangement may be a target arrangement as described above and may have some or all of the above described features of the target arrangements described above. The target arrangement provides a target support 110 and, according to some embodiments, a hollow section 115. The target support 110 supports a non-planar target 120 in the embodiment of Fig. 6. In the embodiment of Fig. 6, the substrate is provided below the target arrangement 108 in the process chamber and/or may be guided below the target arrangement for depositing material from above.

[0050] Typically, the process chamber being adapted for receiving a target arrangement according to embodiments described herein may include connection means for fixing the target arrangement to the process chamber. For instance, the process chamber may include holes, bores, bars, bolts, screw connections, clamping devices and the like for fixing the target arrangement to the process chamber.

[0051] According to different embodiments, which can be combined with other embodiments described herein, the target material can be selected from the group consisting of: a ceramic, a metal, ITO, IZO, IGZO, AZO, SnO, AlSnO, InGaSnO, titanium, aluminum, copper, molybdenum, and combinations thereof. The target material is typically provided either by the material to be deposited on a substrate or by the material which is supposed to react with a reactive gas in the processing area to then be deposited on the substrate after reacting with the reactive gas. [0052] According to some embodiments, which can be combined with other embodiments described herein, the embodiments described herein can be utilized for Display PVD, i.e. sputter deposition on large area substrates for the display market. According to some embodiments, large area substrates or respective carriers, wherein the carriers have a plurality of substrates, may have a size of at least 0.67 m². Typically, the size can be about 0.67m² (0.73x0.92m - Gen 4.5) to about 8 m², more typically about 2 m² to about 9 m² or even up to 12 m². Typically, the substrates or carriers, for which the structures, apparatuses, such as cathode assemblies, and methods according to embodiments described herein are provided, are large area substrates as described herein. For instance, a large area substrate or carrier can be GEN 4.5, which corresponds to about 0.67 m² substrates (0.73x0.92m), GEN 5, which corresponds to about 1.4 m² substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m² substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m² substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m² substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.

[0053] In some embodiments, the target arrangement according to embodiments described herein may be used in a processing apparatus for a variety of processes, such as PVD processes, CVD processes, PECVD processes. The named processes may also be combined while the substrate is moved through the processing apparatus. Particularly, different PECVD processes can be utilized for, e.g., TFT or flexible TFT manufacturing, more particularly for ultrahigh barriers, a microwave plasma process or the like.

[0054] Fig. 7 shows a flow chart of a method 700 for manufacturing a target arrangement to be used in a processing apparatus. According to some embodiments, the method may be used for manufacturing a target arrangement as described in embodiments above, such as embodiments shown in Figs. 1 to 6. The method 700 includes in a first box 710 forming a target support configured for supporting a non-planar target material. Forming the target support includes forming the target support so as to have a vacuum side and an atmospheric side. According to some embodiments, forming the target support may include processing methods like casting, annealing, performing surface treatment, and the like. [0055] In some embodiments, the target support may be made from a material like Cu, Ti, or stainless steel. In some embodiments, forming a target support may include forming a target support having a plate-like basis and a hollow section, such as described above with respect to the embodiments shown in Figs. 1 to 6. According to additional or alternative embodiments, the target support may be formed by providing a plate-like basis, a side support, and a front support, e.g. for forming a target support as exemplarily shown in Fig. la. The method according to embodiments described herein may include methods for forming any embodiment of a target arrangement mentioned herein. For instance, forming a target arrangement may include assembling two or more parts so as to form a target support, e.g. assembling a plate-like basis and a side support.

[0056] In box 720, the method 700 further includes providing target material on the target support. According to embodiments described herein, the target material includes a bent surface. For instance, the surface of the target material may have a shape of an arc of a circle, of an ellipse or a parabola. In some embodiments, the target material may have a shape as explained in detail above with respect to the embodiments shown in Figs. 1 to 6. According to some embodiments, the target material may be provided at the same time, when the target support is formed, e.g. when the target support is made from the target material (e.g. aluminum). In some embodiments, the target support and the target material may be provided as one piece.

[0057] In some embodiments, providing the target material may include providing materials like a ceramic, a metal, ITO, IZO, IGZO, AZO, SnO, AlSnO, InGaSnO, titanium, aluminum, copper, molybdenum, and combinations thereof.

[0058] According to some embodiments, providing target material includes binding target material to the target support. In one example, binding the target material to the target support may include providing an adhesive between the target support and the target material sufficient for reliable bonding during the process, for which the target arrangement is to be used. For instance, the bond between the target support and the target material should be strong enough for withstanding the intended process temperature, temperature changes, pressure changes, low pressure, vacuum, plasma being present in the process chamber and the like. According to some embodiments, bonding may include fixing by adhering or gluing, fixing by welding, fixing by thermal processes, fixing by screwing and the like. In other embodiments, bonding may include spraying the target material onto the target support, or casting or pressing of powder onto the outer surface of the target support. [0059] According to some embodiments, the target arrangement according to embodiments described herein may have several desired properties. For instance, compared to a rotatable target, no drive for the target arrangement is used. Not using a drive for the target arrangement reduces the complexity of the design and the demand of the design, which - in turn - spares time and costs. For instance, a reduced complexity of the target arrangement design results in little maintenance expenses. Also, the uptime of the process chamber may be increased with decreasing maintenance effort.

[0060] Further, the target arrangement according to embodiments described herein has a reduced particle generation compared to a rotatable target. The target arrangement and the target support remain static during the sputter process, while having at the same time a high process efficiency. A rotatable target produces unwanted particles due to the rotational movement of the target and the support. For instance, particles from the target support may negatively influence the deposition quality. According to some embodiments, the target arrangement, and especially the non-planar target on a target support having an atmospheric side and a vacuum side, allows for including a lifting device for keeping the distance between magnet assembly and target surface constant. Compared to a rotatable target, the target arrangement according to embodiments described herein provides additional functions.

[0061] According to some embodiments, the manufacturing process for the target arrangement having target material provided to the target support is simpler than the manufacturing process of a rotatable target. For instance, bonding the target material to a target support, which may have the shape of a half cylindrical tube in one example, is easier and allows for using larger forces on the half cylindrical tube compared to the forces, which can be applied to a round target. Low manufacturing costs may result.

[0062] In some embodiments, process chamber designs may be used for the target arrangement according to embodiments described herein, which formerly were used for planar targets. For instance, the target arrangement according to embodiments described herein may be placed in existing process chambers. According to other embodiments, the process chambers may be adapted for being able to receive a target arrangement as described herein. [0063] As mentioned above, the design of the target arrangement allows for arranging a magnet system in the target support and the non-planar target. The non-planar target having a bent surface allows for using more than one magnet element for the target arrangement. In particular, the number of used magnet elements may be chosen dependent on the radius of curvature of the non-planar target. Increasing the number of the magnet elements, and especially the number of racetracks for the non-planar target, the sputter rate may be increased, which in turn increases the process velocity and the process efficiency.

[0064] While the foregoing is directed to embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A target arrangement (100; 101; 102; 103; 104; 106) for a processing apparatus (105; 107), comprising a target support (110) configured for supporting a non-planar target material (120), wherein the target support (110) comprises a vacuum side (130) and an atmospheric side (140).

2. The target arrangement according to claim 1, further comprising a magnet assembly (117) configured for magnetron sputtering from the target material (120), wherein the magnet assembly (117; 118; 119) is configured for a rotational movement of at least an angle of 30°.

3. The target arrangement according to claim 1, further comprising a magnet assembly (117) configured for magnetron sputtering from the target material (120) extending in a first direction along a length of the target support, wherein the magnet assembly (117; 118, 119) is configured for a rotational movement of at least 30°, wherein the rotation axis of the rotational movement is essentially parallel to the first direction.

4. The target arrangement according to any of claims 2 to 3, wherein the magnet assembly comprises three magnet elements (117; 118, 119), being especially arranged along a line allowing the magnet elements each having the same distance to the non-planar target material.

5. The target arrangement according to any of the preceding claims, wherein the target support (110) is configured for supporting the target material (120) extending along a length and having a surface with a form of an arc of a circle, of an ellipse or a parabola.

6. The target arrangement according to any of the preceding claims, further comprising target material extending along a length and having a bent surface, in particular a surface with a form of an arc of a circle, of an ellipse or a parabola.

7. The target arrangement according to any of claims 5 to 6, wherein the arc is an arc of a circle, wherein the length of the arc is defined as (Θ/180)π*Ρν, wherein Θ < 360°.

8. The target arrangement according to any of the preceding claims, wherein the target support (110) comprises a plate-like basis (111) and a structure (112; 113) extending from the plate-like basis (111).

9. The target arrangement according to any of claims 2 to 3, further comprising a lifting device for keeping the distance between the target material (120) surface at the vacuum side (130) and the magnet system (117; 118; 119) constant.

10. The target arrangement according to any of the preceding claims, further comprising target material provided on the target support, wherein at least one of the target support and the target material has the shape of a half cylindrical tube.

11. Processing apparatus (105; 107) for processing a substrate, comprising: a processing chamber having an outside and an inside, which is adapted for housing the substrate during the process; a substrate support (154) for the substrate to be processed; and wherein the processing chamber is adapted for receiving a target arrangement (100; 101; 102; 103; 104; 106) according to any of the preceding claims.

12. The processing apparatus (105; 107) according to claim 11, wherein the processing apparatus further comprises a target arrangement (100; 101; 102; 103; 104; 106) according to any of the preceding claims.

13. The processing apparatus according to any of claims 11 to 12, wherein the processing apparatus (105; 107) is adapted to connect the target arrangement (100; 101; 102; 103; 104;

106) to the processing chamber from the outside of the processing chamber.

14. Method for manufacturing a target arrangement to be used in a processing apparatus (105;

107) , comprising: forming a target support (110) configured for supporting a non-planar target material (120), wherein the target support (110) includes a vacuum side (130) and an atmospheric side (140); providing target material (120) on the target support (110), the target material (120) having a bent surface at least after being provided on the target support (110), in particular a surface with a form of an arc of a circle, of an ellipse or a parabola.

15. Method according to claim 14, wherein providing target material comprises binding target material (120) to the target support (110).