[go: up one dir, main page]

WO2016088099A1 - Procédé cmoss permettant de fabriquer un capteur de gaz intégré et capteur de gaz à cmos intégré correspondant - Google Patents

Procédé cmoss permettant de fabriquer un capteur de gaz intégré et capteur de gaz à cmos intégré correspondant Download PDF

Info

Publication number
WO2016088099A1
WO2016088099A1 PCT/IB2015/059373 IB2015059373W WO2016088099A1 WO 2016088099 A1 WO2016088099 A1 WO 2016088099A1 IB 2015059373 W IB2015059373 W IB 2015059373W WO 2016088099 A1 WO2016088099 A1 WO 2016088099A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
sensing element
forming
gas sensing
cmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2015/059373
Other languages
English (en)
Inventor
Josep Montanya Silvestre
Gerhard Spitzlsperger
Fabio SPAZIANI
Daniel Fernandez Martinez
Michael KREITMAIER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LFoundry SRL
Original Assignee
LFoundry SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LFoundry SRL filed Critical LFoundry SRL
Publication of WO2016088099A1 publication Critical patent/WO2016088099A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/128—Microapparatus

Definitions

  • the present invention relates to a CMOS process for manufacturing an integrated gas sensor and to a corresponding CMOS integrated gas sensor.
  • gas sensors are known, using a metal oxide as a sensing, or detection, element.
  • the metal oxide changes its electrical conductivity, and hence its electrical resistance, due to the presence of a certain gas (or a number of gases), when it is heated at a given temperature (or temperatures) .
  • the aim of the present invention is consequently to provide an improved integrated gas sensor and manufacturing process .
  • CMOS process for manufacturing an integrated gas sensor and a related CMOS integrated gas sensor are consequently provided, as defined in the annexed claims.
  • FIGS. la-11 are schematic cross sections of an integrated gas sensor according to an embodiment of the present solution, in subsequent steps of a corresponding CMOS manufacturing process;
  • FIG. 3 is a schematic depiction of a mobile device embedding the integrated gas sensor, according to a further aspect of the present solution.
  • an embodiment of the present solution envisages manufacturing of an integrated gas sensor using fully CMOS-compatible process steps and materials.
  • the integrated gas sensor is provided on top of the stack of interconnection layers (stacked metal and dielectric layers) of a typical CMOS integrated structure.
  • one aspect of the present solution envisages use of a standard CMOS process and formation of the gas sensor with last (or back-end) steps of the process, in particular envisaging formation of a tungsten (W) element, which is then oxidized (forming tungsten oxide, e.g. WO 3 ) and arranged so as to be exposed to the outside environment in order to allow measure of the concentration of one or more gases to be detected.
  • W tungsten
  • the process starts with an almost finished CMOS wafer or die (of which only the portion relevant to the present discussion is shown, for reasons of clarity), i.e. after electric/electronic components, shown schematically and denoted with 3, have been formed within a substrate 2 of semiconductor material, for example silicon, and after a stack 4 of interconnection layers has been formed on the substrate 2.
  • CMOS wafer or die of which only the portion relevant to the present discussion is shown, for reasons of clarity
  • electric/electronic components 3 may be transistors, resistors, diodes, electrical connections and similar.
  • these electric/electronic components 3 may be designed to provide an integrated electronic circuit (an ASIC - Application Specific Integrated Circuit, and/or a CMOS circuit) , designed to implement processing operations, e.g. amplification and filtering operations, on detected electrical signals (e.g. the gas detection signals) .
  • the stack 4 includes: a bottom dielectric layer 5, formed on the substrate 2; a bottom conductive layer 6 and a top conductive layer 7, which is designed to provide an external contact interface allowing contact from the outside towards the bottom layers and the ASIC/CMOS circuit integrated within the substrate 2; and, between the bottom conductive layer 6 and the top conductive layer 7, a number (equal to one in the non limitative example of Figure la) of additional conductive layers 8.
  • conductive layers 6, 7, 8, e.g. of a metal such as aluminum, are separated from one another by dielectric material layers 9, e.g. of silicon oxide, and conductive vias 10 traverse the dielectric material layers 9 in order to provide electrical conductive paths to interconnect the conductive layers 6, 7, 8 according to desired electrical connection paths.
  • conductive vias 10 include tungsten for a Al back-end CMOS process.
  • the assembly of the substrate 2 and stack 4 is not shown in detail again in the following Figures, and is generally referred to as a supporting layer assembly 11, having a top surface 11a (defined by the top conductive layer 7 or a passivation layer being formed thereon) .
  • an oxide/TEOS dielectric layer 12 is formed on top of the supporting layer assembly 11.
  • a conductive path layer 13 is formed on the oxide/TEOS dielectric layer 12, e.g. via deposition of an aluminum stack formed of a TiN/Al/TiN layer assembly.
  • the aluminum stack of the conductive path layer 13 is then patterned, in order to define a desired arrangement for the conductive path, via a photolithographic etch (through a suitable mask, here not shown) followed by a cleaning step.
  • the conductive path layer 13 is defined to form at least a first conductive portion 13a and a second conductive portion 13b, separated by an opening 14.
  • this conductive path layer 13 can be used as a routing and pad layer also for the ASIC/CMOS circuit integrated within the substrate 2; moreover, the same conductive portions 13a, 13b may also be connected to the same ASIC/CMOS circuit (or generally to the electric/electronic components 3 integrated in the substrate 2) through conductive vias 10 and conductive layers 6,7,8 in the underlying supporting layer assembly 11 (further vias 10 may also be provided through dielectric layer 12, in a manner that will be clear to a person skilled in the field) .
  • the subsequent manufacturing step, Figure Id envisages deposition of an interdielectric layer (ILD Inter-Layer Dielectric) 16, which covers the first and second conductive portions 13a, 13b and fills the opening 14 previously formed in the conductive path layer 13, thereby electrically insulating the same first and second conductive portions 13a, 13b.
  • ILD Inter-Layer Dielectric interdielectric layer
  • first and second contact vias 18a, 18b are then formed through the interdielectric layer 16, in order to contact the first and second conductive portions 13a, 13b; first and second contact vias 18a, 18b therefore extend from a top surface of the interdielectric layer 16 up to the underlying first or respective second conductive portion 13a, 13b.
  • first and second contact vias 18a, 18b envisages: a photolithographic etch through the previously formed interdielectric layer 16, (using a suitable mask, here not shown) followed by a cleaning step, in order to form through holes; and filling of the same through holes with a suitable conductive material, followed by a chemical mechanical polishing (CMP) step of the surface .
  • CMP chemical mechanical polishing
  • a subsequent step of the manufacturing process envisages formation of a gas sensing element 20, including a metal oxide element, in particular in the form of a tungsten oxide element (e.g. W0 3 ) .
  • a gas sensing element 20 including a metal oxide element, in particular in the form of a tungsten oxide element (e.g. W0 3 ) .
  • a gas sensing layer 21, in particular a tungsten layer, is first formed on the interdielectric layer 16, Figure If, and is then oxidized via a suitable oxidation step, thus forming an oxidized gas sensing layer 21', Figure lg .
  • plasma oxidation can be used, e.g. using a plasma ashing equipment with O2 plasma and temperature of around 250°C or higher (e.g. 250-300°C) .
  • the oxidized gas sensing layer 21' is patterned in order to form the gas sensing element 20, with a first and a second end portions 20a, 20b in contact with the first and, respectively, second contact vias 18a, 18b.
  • This patterning step is implemented via a suitable etch through a further mask (not shown) .
  • a cover (or passivation) layer 22 is deposited on top of the previously formed structures, i.e. on the gas sensing element 20 and interdielectric layer 16 (where not covered by the same gas sensing element 20) .
  • Cover layer 22 may for example be a double layer constituted of a carbon layer 22a (like transparent carbon, in the following denoted as TC layer 22a) and of a passivation layer 22b (e.g. of SiON or SiN) .
  • cover layer 22 may be constituted of a single dielectric layer (depending on the subsequent etching process for patterning) .
  • the cover layer 22 is then patterned, Figure li, via suitable etching through a further mask (not shown) .
  • a sensor opening 24 is defined through the cover layer 22, so as to expose to the outside at least a portion of the underlying gas sensing element 20.
  • Side portions of the cover layer 22 remain at the side of the same gas sensing element 20, next to, and covering, the first and second end portions 20a, 20b thereof.
  • a reference sensor element may be formed, e.g. to be connected to the gas sensing element 20 in an electrical bridge circuit arrangement; in that case, cover layer 22 is kept on the reference sensor element.
  • Etching is followed by a ashing and/or cleaning step, in order to remove any possible residual material within the sensor opening 24, on the gas sensing element 20.
  • Pad openings 26a, 26b reach the pads of the ASIC/CMOS integrated in the substrate 2 (in a known manner, here not shown) and, if required (and as shown in Fig 11 as an example) , the first and, respectively, second conductive path portions 13a, 13b.
  • first and second conductive portions 13a, 13b therefore define first and second electrodes 28a, 28b (thereby being also denoted as first and second electrode portions 13a, 13b) , electrically connected to a respective end portion 20a, 20b of the gas sensing element 20, by means of a respective contact via 18a, 18b; the first and second electrodes 28a, 28b may be contacted from the outside in order to allow provision or detection of an electric current/voltage associated to the gas sensing element 20, and/or may be in electrical contact with the ASIC/CMOS circuit integrated within the substrate 2, as previously discussed, through vias 10 and conductive layers 6,7,8.
  • Formation of pad openings 26a, 26b is obtained via etching through a suitable mask (not shown) , followed by a ashing and/or cleaning step, in order to remove any possible residual material within the same contact openings 26a, 26b.
  • a possible alternative to the process flow described above may envisage performing a so called "self-oxidation" of the gas sensing element 21 at the end of the manufacturing process, after the first and second electrodes 28a, 28b have been defined (in this case, the oxidation step may not be envisaged in the previous steps of the manufacturing process) .
  • an oxidation current I ox is in this case made to flow through the gas sensing element 20 via the first and second electrodes 28a, 28b, to cause heating thereof by the Joule effect.
  • a voltage source 29 may be used to provide an oxidation voltage V ox , in order to generate the oxidation current I ox through the gas sensing element 20 to cause heating thereof by the Joule effect.
  • oxidation is thus performed through "self-heating" of the gas sensing element 20, i.e. without the provision of external heater elements (thus simplifying the structure and the manufacturing process) .
  • the gas sensing element 20 in particular the tungsten oxide (WO 3 ) , changes its electrical resistivity depending on the presence of certain gas molecules, like NOx, COx, ethanol, water, ozone, among others. This change of electrical resistivity is also dependent on the temperature of the same tungsten element.
  • tungsten oxide WO 3
  • a time sweep of a current or voltage applied to the gas sensing element 20, via the first and second electrodes 28a, 28b, may be performed, so as to generate a corresponding sweep of its temperature.
  • the resistance of the gas sensing element 20 is measured during the sweep, for example again via the first and second electrodes 28a, 28b.
  • Heating of the gas sensing element 20 is thus performed via the Joule effect, without additional heaters being required; in other words, "self-heating" of the gas sensing element 20 is implemented.
  • the gas sensor in this case define a "multi-gas" sensor.
  • the integrated gas sensor can be manufactured using standard CMOS processing, for example with the processing of an additional tungsten layer (for the definition of the gas sensing element 20) .
  • CMOS processing for example with the processing of an additional tungsten layer (for the definition of the gas sensing element 20) .
  • additional tungsten layer for the definition of the gas sensing element 20.
  • CMOS processing allows to take advantage of the very small feature size (or critical dimension) , not available to MEMS processing (which typically use older equipment) . This makes it possible to build smaller sensors, which in turn imply lower power consumption (because there is less mass that needs to be heated to sense gas), and also faster response time.
  • the manufacturing process using mostly standard CMOS processing, is ready for HVM (High Volume Manufacturing) and provide a very short TTM (Time To Market) in the design of the integrated gas sensor.
  • HVM High Volume Manufacturing
  • TTM Time To Market
  • the integrated gas sensor is embedded inside a mobile device, like a smart phone, a tablet, or in general a mobile device or handset; indeed, the discussed integrated gas sensor allows to achieve the low cost, low power and low size requirements that are generally required to mobile devices.
  • the integrated gas sensor is so small, thanks to using CMOS processing, and hence consumes little power and is very fast, it is possible to consider a multi-gas sensing approach, both using a temperature profile to be applied to the gas sensing element 20, or building an array of sensors, which could be driven in parallel at a fixed voltage, or in series with the same current, e.g. having different shapes, to set different temperature points. This is possible thanks to the fast response time in the first case, and thanks to the low power consumption on the second case .
  • the approach to apply current or voltage to the metal oxide itself, so that by Joule self-heating it is heated up, has the advantage of not requiring external heating elements (thus simplifying the design and the manufacturing process), and that there is no heat loss in transferring the heat from a heater element (metal) to the sensing element (metal oxide) . Therefore, the self-heating approach further reduces power consumption.
  • the discussed integrated gas sensor enables a mobile handset having gas or multi-gas sensing capability, as shown schematically in Figure 3, showing a mobile device, generally denoted with 34, being provided with the integrated gas sensor, here denoted with 35.
  • This mobile handset 34 with the right software or applications (so called “Apps”) may be configured to implement a breathalyzer, to monitor the air quality, to detect gas leakages, to sense the quality of food and beverages, and/or to detect illness or malaise, e.g. smelling the breath of the user while he/she speaks.
  • the mobile handset, with the right software or App could offer, for example, the possibility to buy on ⁇ line, or to otherwise acquire, a medicine or other solution to improve the health of the user.
  • the manufacturing steps for the formation of the gas sensing element 20 with the CMOS process may be implemented starting from a simple semiconductor substrate, as the supporting layer assembly 11 (in this case, top surface 11a being a top surface of the semiconductor substrate) .
  • the discussed solution may be implemented in a Bi-CMOS process, or in general in any other standard semiconductor microelectronic process for manufacturing solid state electronics integrated circuits, preferably provided with tungsten vias (usually found in Al back-end processing) .

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

L'invention concerne un procédé CMOS permettant de fabriquer un capteur de gaz intégré (35) avec des étapes de traitement entièrement compatibles CMOS, ledit procédé consistant à : fournir un ensemble couche de support (11) comportant un matériau semi-conducteur et une surface supérieure (11a) ; former une première (13a) et une seconde (13b) partie d'électrode au-dessus de la surface supérieure (11a) de l'ensemble couche de support (11) ; former une couche diélectrique (16) qui recouvre la première (13a) et la seconde (13b) partie d'électrode ; former un premier (18a) et un second (18b) trou d'interconnexion de contact à travers la couche diélectrique (16), atteignant, respectivement, la première (13a) et la seconde (13b) partie d'électrode ; et former un élément de détection de gaz (20) sur la couche diélectrique (16), ayant une première (20a) et une seconde (20b) partie d'extrémité en contact, respectivement, avec le premier (18a) et le second (18b) trou d'interconnexion de contact.
PCT/IB2015/059373 2014-12-05 2015-12-04 Procédé cmoss permettant de fabriquer un capteur de gaz intégré et capteur de gaz à cmos intégré correspondant Ceased WO2016088099A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14196677.0 2014-12-05
EP14196677 2014-12-05

Publications (1)

Publication Number Publication Date
WO2016088099A1 true WO2016088099A1 (fr) 2016-06-09

Family

ID=52006916

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2015/059373 Ceased WO2016088099A1 (fr) 2014-12-05 2015-12-04 Procédé cmoss permettant de fabriquer un capteur de gaz intégré et capteur de gaz à cmos intégré correspondant

Country Status (1)

Country Link
WO (1) WO2016088099A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109467044A (zh) * 2018-12-29 2019-03-15 杭州北芯传感科技有限公司 单片集成的cmos加mems的微加热器及制备方法
CN112714867A (zh) * 2018-09-18 2021-04-27 ams有限公司 电化学燃料电池型气体传感器

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2230507A1 (fr) * 2009-03-17 2010-09-22 Nxp B.V. Capteur d'humidité ou de gaz
WO2012100362A1 (fr) * 2011-01-27 2012-08-02 Sensirion Ag Procédé pour fabriquer une puce de capteur
EP2498481A1 (fr) * 2011-03-09 2012-09-12 Sensirion AG Téléphone mobile avec capteur d'humidité
EP2554980A1 (fr) * 2011-08-03 2013-02-06 Nxp B.V. Circuit intégré avec capteur et procédé de fabrication d'un tel circuit intégré
EP2762882A1 (fr) * 2013-01-31 2014-08-06 Sensirion Holding AG Dispositif électronique portable avec capteur de cétone
EP2765410A1 (fr) * 2014-06-06 2014-08-13 Sensirion AG Structure d'emballage de capteur de gaz
EP2808675A1 (fr) * 2013-05-31 2014-12-03 Sensirion AG Capteur chimique d'oxyde métallique intégré
WO2015071337A1 (fr) 2013-11-12 2015-05-21 Lfoundry S.R.L. Capteur de gaz intégré et son procédé de fabrication

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2230507A1 (fr) * 2009-03-17 2010-09-22 Nxp B.V. Capteur d'humidité ou de gaz
WO2012100362A1 (fr) * 2011-01-27 2012-08-02 Sensirion Ag Procédé pour fabriquer une puce de capteur
EP2498481A1 (fr) * 2011-03-09 2012-09-12 Sensirion AG Téléphone mobile avec capteur d'humidité
EP2554980A1 (fr) * 2011-08-03 2013-02-06 Nxp B.V. Circuit intégré avec capteur et procédé de fabrication d'un tel circuit intégré
EP2762882A1 (fr) * 2013-01-31 2014-08-06 Sensirion Holding AG Dispositif électronique portable avec capteur de cétone
EP2808675A1 (fr) * 2013-05-31 2014-12-03 Sensirion AG Capteur chimique d'oxyde métallique intégré
WO2015071337A1 (fr) 2013-11-12 2015-05-21 Lfoundry S.R.L. Capteur de gaz intégré et son procédé de fabrication
EP2765410A1 (fr) * 2014-06-06 2014-08-13 Sensirion AG Structure d'emballage de capteur de gaz

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112714867A (zh) * 2018-09-18 2021-04-27 ams有限公司 电化学燃料电池型气体传感器
CN109467044A (zh) * 2018-12-29 2019-03-15 杭州北芯传感科技有限公司 单片集成的cmos加mems的微加热器及制备方法
CN109467044B (zh) * 2018-12-29 2024-04-19 南京潇澳酒业有限公司 单片集成的cmos加mems的微加热器及制备方法

Similar Documents

Publication Publication Date Title
EP3069130B1 (fr) Capteur de gaz intégré et son procédé de fabrication
EP2554980B1 (fr) Circuit intégré avec capteur et procédé de fabrication d'un tel circuit intégré
JP4325133B2 (ja) ガスセンサおよびその製造方法
CN105424199B (zh) 一种差分输出的红外探测器单元结构及制造方法
EP3610252A1 (fr) Procédé et dispositif de détection de gaz
US20160077032A1 (en) Catalysis combustion type gas sensor
JP2009507217A (ja) ガス検知半導体素子
CN104617095B (zh) Cmos气体传感器及其形成方法
WO2016088099A1 (fr) Procédé cmoss permettant de fabriquer un capteur de gaz intégré et capteur de gaz à cmos intégré correspondant
US11345590B2 (en) Semiconductor sensor and method of manufacturing the same
US9570390B2 (en) Semiconductor device with integrated hot plate and recessed substrate and method of production
CN110621613A (zh) 半导体芯片
JP7529770B2 (ja) 複数の検知能力を有するマルチピクセル・ガス・マイクロセンサの製造方法
CN109100398B (zh) 一种酒精浓度检测系统封装结构及其制造方法
JP6679787B1 (ja) Ｍｅｍｓ型半導体式ガス検知素子
JP5212286B2 (ja) 薄膜ガスセンサおよび薄膜ガスセンサの製造方法
WO2012078023A1 (fr) Capteur de gaz à microplaque chauffante
CN120092171A (zh) 传感器芯片、压力传感器、制造压力传感器的方法
TW201201292A (en) Semiconductor bio-sensors and methods of manufacturing the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15808826

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15808826

Country of ref document: EP

Kind code of ref document: A1