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WO2016086539A1 - 液晶面板及其制作方法 - Google Patents

液晶面板及其制作方法 Download PDF

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Publication number
WO2016086539A1
WO2016086539A1 PCT/CN2015/072503 CN2015072503W WO2016086539A1 WO 2016086539 A1 WO2016086539 A1 WO 2016086539A1 CN 2015072503 W CN2015072503 W CN 2015072503W WO 2016086539 A1 WO2016086539 A1 WO 2016086539A1
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Prior art keywords
color resist
layer
photoresist spacer
spacer
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2015/072503
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English (en)
French (fr)
Inventor
宋利旺
许勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US14/428,979 priority Critical patent/US9638962B2/en
Publication of WO2016086539A1 publication Critical patent/WO2016086539A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133351—Manufacturing of individual cells out of a plurality of cells, e.g. by dicing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13396—Spacers having different sizes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a liquid crystal panel and a method of fabricating the same.
  • LCDs liquid crystal displays
  • Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become mainstream in display devices.
  • liquid crystal display devices which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is to place liquid crystal molecules in two parallel glass substrates. There are many vertical and horizontal small wires between the two glass substrates, and the liquid crystal molecules are controlled to change direction by energizing or not, and the light of the backlight module is changed. Refracted to produce a picture.
  • a liquid crystal display panel consists of a color filter substrate (CF), a thin film transistor substrate (TFT, Thin Film Transistor), a liquid crystal (LC) sandwiched between a color filter substrate and a thin film transistor substrate, and a sealant frame ( Sealant), the molding process generally includes: front array (Array) process (film, yellow, etching and stripping), middle cell (Cell) process (TFT substrate and CF substrate bonding) and rear module assembly Process (drive IC and printed circuit board is pressed).
  • Array array
  • Cell middle cell
  • rear module assembly Process drive IC and printed circuit board is pressed.
  • the front Array process mainly forms a TFT substrate to control the movement of liquid crystal molecules; the middle Cell process mainly adds liquid crystal between the TFT substrate and the CF substrate; the rear module assembly process is mainly to drive the IC to press and print the circuit.
  • the integration of the plates drives the liquid crystal molecules to rotate and display images.
  • AMLCD Active Matrix
  • TFT array substrate a color filter on Array
  • PS photo spacer
  • the photoresist spacer is formed on the side of the TFT array substrate, and the TFT array substrate side is increased.
  • a photolithography process causes the Array process time to lengthen and reduce production efficiency.
  • a TFT layer 200, a color resist layer 300, a protective layer 400, a pixel electrode layer 500, and a photoresist gap are sequentially formed on a lower substrate during fabrication of a TFT array substrate.
  • the above manufacturing method has a lithography process in which a photoresist spacer layer 600 is added, so that the process time is too long and the production efficiency is low.
  • Another object of the present invention is to provide a method for fabricating a liquid crystal panel, which can simplify the process, save the photomask, and improve production efficiency.
  • the present invention provides a liquid crystal panel comprising: a first substrate, a TFT layer disposed on the first substrate, a color resist layer disposed on the TFT layer, and a photoresist gap disposed on the color resist layer a material layer, a protective layer disposed on the color resist layer and the photoresist spacer layer, a via hole penetrating through the color resist layer and the protective layer, a pixel electrode layer formed on the protective layer and electrically connected to the TFT layer through the via hole, and a second substrate opposite to the first substrate, wherein the photoresist spacer layer is the same material as the one or more color resists of the color resist layer, and the photoresist spacer layer and the color The resist layer is formed simultaneously during the fabrication process.
  • the color resist layer includes a first color resist, a second color resist, and a third color resist
  • the photoresist spacer layer includes a main photoresist spacer and a secondary photoresist spacer, and the main photoresist spacer a height greater than a height of the secondary photoresist spacer
  • the secondary photoresist spacer is on a first color resist
  • the primary photoresist spacer is on a second color resist
  • the secondary photoresist gap The material is the same as the material of the second color resist, and both are formed in the same mask process
  • the material of the main photoresist spacer and the third color resist are the same, and both are formed in the same mask process.
  • the color resist layer includes a first color resist, a second color resist, and a third color resist
  • the photoresist spacer layer includes a main photoresist spacer and a secondary photoresist spacer, and the main photoresist spacer
  • the height of the spacer is greater than the height of the secondary photoresist spacer; the primary photoresist spacer and the secondary photoresist spacer are located on the first color resist; the main photoresist spacer, the secondary photoresist spacer, and
  • the materials of the second color resist are the same, and the three are formed in the same mask process.
  • the color resist layer includes a first color resist, a second color resist, and a third color resist
  • the photoresist spacer layer includes a main photoresist spacer and a secondary photoresist spacer, and the main photoresist spacer a height greater than a height of the secondary photoresist spacer
  • the secondary photoresist spacer is on a first color resist
  • the primary photoresist spacer is on a second color resist
  • the primary photoresist spacer The material of the secondary photoresist spacer and the third color resist is the same, and the three are formed in the same mask process.
  • the color resist layer includes a first color resist, a second color resist, a third color resist, and a fourth color resist
  • the photoresist spacer layer includes a main photoresist spacer and a secondary photoresist spacer, and the The height of the primary photoresist spacer is greater than the height of the secondary photoresist spacer.
  • the invention also provides a method for fabricating a liquid crystal panel, comprising the following steps:
  • Step 1 providing a first substrate, depositing a TFT layer on the first substrate;
  • Step 2 forming a color resist layer and a photoresist spacer layer on the TFT layer, wherein the photoresist spacer layer is located above the color resist layer, and is formed simultaneously with the color resist layer during fabrication;
  • Step 3 forming a protective layer on the color resist layer and the photoresist spacer layer, and forming via holes on the color resist layer and the protective layer by dry etching or wet etching;
  • Step 4 forming an ITO film on the protective layer by a sputtering process, forming a pixel electrode layer by a wet etching process, and the pixel electrode layer is electrically connected to the TFT layer through a via hole;
  • Step 5 providing a second substrate, injecting liquid crystal molecules between the first substrate and the second substrate, and packaging the first substrate and the second substrate.
  • step 2 The specific steps of the step 2 include:
  • the color resist layer includes a first color resist, a second color resist, and a third color resist
  • the photoresist spacer layer includes a main photoresist spacer and a secondary photoresist spacer, and The height of the main photoresist spacer is greater than the height of the secondary photoresist spacer;
  • Step 21 coating a first color resist film layer on the TFT layer, and forming a first color resist by a photolithography process;
  • Step 22 applying a second color resist film layer on the TFT layer and the first color resist, and simultaneously forming a secondary photoresist spacer on the first color resist and a TFT layer on the TFT layer through a mask process Second color resistance;
  • Step 23 applying a third color resist film layer on the TFT layer, the first color resist and the second color resist, and simultaneously forming a main photoresist spacer located on the second color resist through a mask process and located a third color resist on the TFT layer;
  • the thickness of the third color resist film layer coated in the step 23 is greater than the thickness of the second color resist film layer coated in the step 22, so that the main photoresist spacer formed in the step 23 The height is greater than the height of the secondary photoresist spacer formed in step 22.
  • step 2 The specific steps of the step 2 include:
  • the color resist layer includes a first color resist, a second color resist, and a third color resist
  • the photoresist spacer layer includes a main photoresist spacer and a secondary photoresist spacer, and The height of the main photoresist spacer is greater than the height of the secondary photoresist spacer;
  • Step 21 coating a first color resist film layer on the TFT layer, and forming a first color resist by a photolithography process;
  • Step 22 applying a second color resist film layer on the TFT layer and the first color resist, and simultaneously forming a main photoresist spacer on the first color resist and a secondary photoresist through a halftone dot mask process. a spacer and a second color resist located on the TFT layer.
  • step 2 The specific steps of the step 2 include:
  • the color resist layer includes a first color resist, a second color resist, and a third color resist
  • the photoresist spacer layer includes a main photoresist spacer and a secondary photoresist spacer, and The height of the main photoresist spacer is greater than the height of the secondary photoresist spacer;
  • Step 21 coating a first color resist film layer on the TFT layer, and forming a first color resist by a photolithography process;
  • Step 22 applying a second color resist film layer on the TFT layer, and forming a second color resist by a photolithography process;
  • Step 23 applying a third color resist film layer on the TFT layer, the first color resist and the second color resist, and simultaneously forming a secondary photoresist spacer on the first color resist by a halftone dot mask process a main photoresist spacer on the second color resist and a third color resist on the TFT layer.
  • the color resist layer includes a first color resist, a second color resist, a third color resist, and a fourth color resist
  • the photoresist spacer layer includes a main photoresist spacer and a secondary photoresist a spacer, and a height of the primary photoresist spacer is greater than a height of the secondary photoresist spacer.
  • the present invention also provides a liquid crystal panel comprising: a first substrate, a TFT layer disposed on the first substrate, a color resist layer disposed on the TFT layer, and a photoresist spacer layer disposed on the color resist layer; a protective layer on the color resist layer and the photoresist spacer layer, a via hole penetrating through the color resist layer and the protective layer, a pixel electrode layer formed on the protective layer and electrically connected to the TFT layer through the via hole, and a surface opposite to the first substrate a second substrate, the photoresist spacer layer is the same material as the one or more color resists of the color resist layer, and the photoresist spacer layer and the color resist layer are simultaneously in the manufacturing process form;
  • the color resist layer comprises a first color resist, a second color resist and a third color resist
  • the photoresist spacer layer comprises a main photoresist spacer and a secondary photoresist spacer
  • the main photoresist The height of the spacer is greater than the height of the secondary photoresist spacer, the secondary photoresist spacer is located on the first color resist, and the main photoresist spacer is located on the second color resist; the secondary light
  • the spacer spacer is the same material as the second color resist, and both are formed in the same mask process; the main photoresist spacer and the third color resist material are the same, and both are formed in the same mask process.
  • the present invention provides a method for fabricating a liquid crystal panel, which forms a photoresist spacer layer while forming a color resist layer, and utilizes a difference in thickness of different color resist film layers or a half-color dot mask process.
  • the main photoresist spacer and the secondary photoresist spacer are different in height, the manufacturing method can simplify the process, save the mask, and improve the production efficiency.
  • the liquid crystal panel provided by the invention is formed on the side of the array substrate by using the color resist material. Resisting the spacer layer, thereby reducing the MM The probability of occurrence of mura reduces the alignment requirements of the upper and lower substrates in the bonding process.
  • FIG. 1 is a schematic structural view of a conventional liquid crystal panel
  • FIG. 2 is a schematic flow chart of a method for fabricating a liquid crystal panel of the present invention
  • FIG. 3 is a schematic structural view of a first embodiment of a liquid crystal panel according to the present invention.
  • FIG. 4 is a schematic structural view of a second embodiment of a liquid crystal panel according to the present invention.
  • FIG. 5 is a schematic diagram of step 22 of a second embodiment of a liquid crystal panel according to the present invention.
  • FIG. 6 is a schematic structural view of a third embodiment of a liquid crystal panel according to the present invention.
  • FIG. 7 is a schematic diagram of step 23 of the manufacturing method of the third embodiment of the liquid crystal panel of the present invention.
  • FIG. 3 is a schematic structural view of a first embodiment of a liquid crystal panel according to the present invention.
  • the present invention further provides a liquid crystal panel comprising: a first substrate 1, a TFT layer 2 disposed on the first substrate 1, a color resist layer 3 disposed on the TFT layer 2, and a color resist.
  • the pixel electrode layer 7 electrically connected to the TFT layer 2 via the via hole 6 and the second substrate 8 disposed opposite to the first substrate 1 are provided.
  • the photoresist spacer layer 4 is the same as the material of the one or more color resists in the color resist layer 3, and the photoresist spacer layer 4 and the color resist layer 3 are in the process of being fabricated. At the same time formed.
  • the color resist layer 3 includes a first color resist 31, a second color resist 32, and a third color resist 33, and the first, second, and third color resists are red color resist, green color resist, and blue color resist, respectively.
  • the photoresist spacer layer 4 includes a main photoresist spacer 41 and a secondary photoresist spacer 42, and the height of the main photoresist spacer 41 is greater than the secondary photoresist The height of the spacer 42.
  • the secondary photoresist spacer 42 is located on the first color resist 31.
  • the primary photoresist spacer 41 is located on the second color resist 32; the secondary photoresist spacer 42 is the same material as the second color resist 32, and both are formed in the same mask process; the main light
  • the material of the barrier spacer 41 and the third color resist 33 are the same, and both are formed in the same mask process.
  • the first substrate 1 and the second substrate 8 are both glass substrates.
  • the TFT layer 2 includes a first metal layer 21, a gate insulating layer 22, a semiconductor layer 23, a second metal layer 24, and a protective layer 25.
  • the semiconductor layer 23 may be a two-layer structure composed of an a-Si layer and an n + Si layer, or may be a single-layer structure composed of an IGZO (indium gallium zinc oxide) layer; the first metal layer
  • the material of 21 and second metal layer 24 may be copper or aluminum.
  • a method for fabricating a first embodiment of a liquid crystal panel of the present invention includes the following steps:
  • Step 1 Providing a first substrate 1 on which a TFT layer 2 is deposited.
  • the TFT layer 2 includes a first metal layer 21, a gate insulating layer 22, a semiconductor layer 23, a second metal layer 24, and a protective layer 25.
  • the semiconductor layer 23 may be a two-layer structure composed of an a-Si layer and an n + Si layer, or may be a single-layer structure composed of an IGZO (indium gallium zinc oxide) layer; the first metal layer
  • the material of 21 and second metal layer 24 may be copper or aluminum.
  • Step 2 forming a color resist layer 3 and a photoresist spacer layer 4 on the TFT layer 2, the photoresist spacer layer 4 is located above the color resist layer 3, and the color resist layer 3 is in the process of being fabricated. Formed at the same time.
  • the color resist layer 3 includes a first color resist 31, a second color resist 32, and a third color resist 33, wherein the first, second, and third color resists are red color resist, green color resist, and Any arrangement of three color resists of blue color resist, the photoresist spacer layer 4 includes a main photoresist spacer 41 and a secondary photoresist spacer 42 , and the height of the main photoresist spacer 41 is greater than The height of the spacer 42 is to be blocked.
  • the step 2 includes the following specific steps:
  • Step 21 Apply a first color resist film layer on the TFT layer 2, and form a first color resist 31 by a photolithography process.
  • Step 22 applying a second color resist film layer on the TFT layer 2 and the first color resist 31, and simultaneously forming a secondary photoresist spacer 42 located on the first color resist 31 through a mask process and located The second color resist 32 on the TFT layer 2.
  • Step 23 applying a third color resist film layer on the TFT layer 2, the first color resist 31 and the second color resist 32, and simultaneously forming a main photoresist on the second color resist 32 through a mask process.
  • the thickness of the third color resist film layer coated in the step 23 is greater than the thickness of the second color resist film layer coated in the step 22, so that the main photoresist spacer formed in the step 23
  • the height of 41 is greater than the height of the secondary photoresist spacer 42 formed in step 22.
  • Step 3 A protective layer 5 is formed on the color resist layer 3 and the photoresist spacer layer 4, and a via hole 6 is formed on the color resist layer 3 and the protective layer 5 by a dry etching or a wet etching process.
  • Step 4 forming an ITO (indium tin oxide) film on the protective layer 5 by a sputtering process, forming a pixel electrode layer 7 by a wet etching process, and the pixel electrode layer 7 forms an electrical property with the TFT layer 2 through the via hole 6. connection.
  • ITO indium tin oxide
  • Step 5 providing a second substrate 8, pouring liquid crystal molecules between the first substrate 1 and the second substrate 8, and packaging the first substrate 1 and the second substrate 8.
  • the first substrate 1 and the second substrate 8 are both glass substrates.
  • FIG. 4 is a schematic structural view of a second embodiment of a liquid crystal panel according to the present invention, which is different from the structure of the first embodiment of the liquid crystal panel of the present invention in that the structure of the photoresist spacer layer 4 is slightly different. different.
  • the color resist layer 3 includes a first color resist 31, a second color resist 32 and a third color resist 33 which are sequentially arranged, and the photoresist spacer layer 4 includes a main photoresist.
  • the spacer 41 and the secondary photoresist spacer 42 have a height greater than the height of the secondary photoresist spacer 42.
  • the main photoresist spacers 41 and the secondary photoresist spacers 42 of the photoresist spacer layer 4 are all located on the first color resist 31.
  • the main photoresist spacers 41 and the secondary photoresist spacers 42 are made of the same material as the second color resists 32 of the color resist layer 3, and the three are formed in the same mask process.
  • the manufacturing method of the second embodiment of the liquid crystal panel of the present invention is similar to the manufacturing method of the first embodiment of the liquid crystal panel of the present invention, except that the specific steps of the step 2 are different, and the second embodiment of the liquid crystal panel of the present invention is fabricated.
  • the specific steps of the step 2 include:
  • Step 21 Apply a first color resist film layer on the TFT layer 2, and form a first color resist 31 by a photolithography process.
  • Step 22 as shown in FIG. 5, applying a second color resist film layer on the TFT layer 2 and the first color resist 31, and simultaneously forming a main layer on the first color resist 31 by a halftone dot mask process.
  • step 22 by using the halftone dot mask process to simultaneously produce the main photoresist spacers 41 and the secondary photoresist spacers 42 having different heights, the process can be simplified, the photomask can be saved, and the production efficiency can be improved.
  • Step 23 applying a third color resist film layer on the TFT layer 2, the first color resist 31 and the second color resist 32, and forming a third color resist 33 by a photolithography process.
  • FIG. 6 is a schematic structural view of a liquid crystal panel according to a third embodiment of the present invention, which is different from the structure of the first embodiment of the liquid crystal panel of the present invention in that the structure of the photoresist spacer layer 4 is slightly different. different.
  • the color resist layer 3 includes a first color resist 31, a second color resist 32 and a third color resist 33 which are sequentially arranged, and the photoresist spacer layer 4 includes a main photoresist.
  • the spacer 41 and the secondary photoresist spacer 42 have a height greater than the height of the secondary photoresist spacer 42.
  • the secondary photoresist spacers 42 are located on the first color resist 31, and the main photoresist spacers 41 are located on the second color resists 32.
  • the main photoresist spacers 41 and the secondary photoresist spacers are disposed.
  • the material of 42 and the third color resist 33 are the same, and the three are formed in the same mask process.
  • the manufacturing method of the third embodiment of the liquid crystal panel of the present invention is similar to the manufacturing method of the first embodiment of the liquid crystal panel of the present invention, and the difference is that the specific steps of the step 2 are different, and the third embodiment of the liquid crystal panel of the present invention is fabricated.
  • the specific steps of the step 2 include:
  • Step 21 Apply a first color resist film layer on the TFT layer 2, and form a first color resist 31 by a photolithography process.
  • Step 22 applying a second color resist film layer on the TFT layer 2, and forming a second color resist 32 by a photolithography process.
  • Step 23 as shown in FIG. 7, applying a third color resist film layer on the TFT layer 2, the first color resist 31, and the second color resist 32, and simultaneously forming the first color through the halftone dot mask process
  • step 23 by using the halftone dot mask process to simultaneously produce the main photoresist spacers 41 and the secondary photoresist spacers 42 having different heights, the process can be simplified, the photomask can be saved, and the production efficiency can be improved.
  • the inventive concept of the present invention is also applicable to the case where the color resist layer includes four color resists, that is, the color resist layer includes a first color resist, a second color resist, a third color resist, and a fourth color resist, the first
  • the second, third, and fourth color resists are any combination of four color resists of red color resist, green color resist, blue color resist, and white color resist, or red color resist, green color resist, and blue color. Any combination of four color resists, resistance and yellow color resistance.
  • the present invention provides a liquid crystal panel that uses a color resist material to form a photoresist spacer layer on one side of the TFT array substrate, thereby reducing the probability of occurrence of MM mura and reducing the alignment requirements of the upper and lower substrates in the bonding process.
  • the invention also provides a method for fabricating a liquid crystal panel, which forms a photoresist spacer layer while forming a color resist layer, and uses different thickness of different color resist film layers or forms a main light of different height by a half color dot mask process.
  • the barrier spacer and the secondary photoresist spacer can simplify the process, save the mask, and improve the production efficiency.

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Abstract

一种液晶面板及其制作方法，所述液晶面板包括：第一基板(1)、设于第一基板(1)上的TFT层(2)、设于TFT层(2)上的色阻层(3)、设于色阻层(3)上的光阻间隙物层(4)、设于色阻层(3)和光阻间隙物层(4)上的保护层(5)、贯穿色阻层(3)和保护层(5)的过孔(6)、形成于保护层(5)上通过过孔(6)与TFT层(2)电性连接的像素电极层(7)、以及与第一基板(1)相对设置的第二基板(8)，所述光阻间隙物层(4)与所述色阻层(3)中的一种或者数种色阻的材料相同，并且所述光阻间隙物层(4)与所述色阻层(3)在制作过程中同时形成。

Description

液晶面板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种液晶面板及其制作方法。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有市场上的液晶显示装置大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。
通常液晶显示面板由彩膜基板(CF，Color Filter)、薄膜晶体管基板(TFT，Thin Film Transistor)、夹于彩膜基板与薄膜晶体管基板之间的液晶(LC，Liquid Crystal)及密封胶框(Sealant)组成，其成型工艺一般包括：前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(TFT基板与CF基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中，前段Array制程主要是形成TFT基板，以便于控制液晶分子的运动；中段Cell制程主要是在TFT基板与CF基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。
主动矩阵式(Active Matrix，AM)液晶显示器是目前最常用的液晶显示器。AMLCD制作技术中采用在TFT阵列基板上制作彩色滤色膜的技术(Color Filter on Array，COA)，可以提高液晶面板的开口率，降低寄生电容。由于在制作过程中采用了COA技术的关系，TFT阵列基板一侧较为平坦，可以将光阻间隙物(Photo Spacer，PS)制作于TFT阵列基板一侧，光阻间隙物位置固定于TFT阵列基板一侧，可以降低MM mura(画面错位、亮度不均匀的现象)发生概率，同时降低贴合制程中对上下基板的对位要求。
但是光阻间隙物形成于TFT阵列基板一侧，TFT阵列基板一侧会增加 一道光刻(Photo)制程，造成Array制程时间拉长，降低生产效率。
请参阅图1，为一种COA型液晶面板，在TFT阵列基板一侧的制作过程中，依次在下基板上形成TFT层200、色阻层300、保护层400、像素电极层500以及光阻间隙物层600，上述制作方法由于增加了一道光阻间隙物层600的光刻制程，因此制程时间过长，生产效率较低。
发明内容
本发明的目的在于提供一种液晶面板，能够降低MM mura发生概率，降低贴合制程中对上下基板的对位要求。
本发明的目的还在于提供一种液晶面板的制作方法，能够简化制程，节省光罩，提高生产效率。
为实现上述目的，本发明提供了一种液晶面板，包括：第一基板、设于第一基板上的TFT层、设于TFT层上的色阻层、设于色阻层上的光阻间隙物层、设于色阻层和光阻间隙物层上的保护层、贯穿色阻层和保护层的过孔、形成于保护层上通过过孔与TFT层电性连接的像素电极层、以及与第一基板相对设置的第二基板，其中，所述光阻间隙物层与所述色阻层中的一种或者数种色阻的材料相同，并且所述光阻间隙物层与所述色阻层在制作过程中同时形成。
所述色阻层包括第一色阻、第二色阻和第三色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于所述次要光阻间隙物的高度；所述次要光阻间隙物位于第一色阻上，所述主要光阻间隙物位于第二色阻上；所述次要光阻间隙物与第二色阻的材料相同，且二者在同一光罩制程中形成；所述主要光阻间隙物和第三色阻的材料相同，且二者在同一光罩制程中形成。
所述色阻层包括第一色阻、第二色阻和第三色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于所述次要光阻间隙物的高度；所述主要光阻间隙物和次要光阻间隙物位于第一色阻上；所述主要光阻间隙物、次要光阻间隙物和第二色阻的材料相同，且三者在同一光罩制程中形成。
所述色阻层包括第一色阻、第二色阻和第三色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于所述次要光阻间隙物的高度；所述次要光阻间隙物位于第一色阻上，所述主要光阻间隙物位于第二色阻上；所述主要光阻间隙物、次要光阻间隙物和第三色阻的材料相同，且三者在同一光罩制程中形成。
所述色阻层包括第一色阻、第二色阻、第三色阻和第四色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于所述次要光阻间隙物的高度。
本发明还提供一种液晶面板的制作方法，包括以下步骤：
步骤1、提供第一基板，在所述第一基板上沉积TFT层；
步骤2、在所述TFT层上形成色阻层和光阻间隙物层，所述光阻间隙物层位于所述色阻层上方，且与所述色阻层在制作过程中同时形成；
步骤3、在色阻层和光阻间隙物层上形成保护层，并在色阻层和保护层上通过干蚀刻或湿蚀刻工艺形成过孔；
步骤4、在所述保护层上通过溅射工艺形成ITO薄膜，通过湿蚀刻工艺形成像素电极层，所述像素电极层通过过孔与TFT层形成电性连接；
步骤5、提供第二基板，在所述第一基板与第二基板之间灌注液晶分子，并对所述第一基板与第二基板进行封装。
所述步骤2的具体步骤包括：
所述步骤2中，所述色阻层包括第一色阻、第二色阻和第三色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于次要光阻间隙物的高度；
步骤21、在所述TFT层上涂布第一色阻膜层，并通过光刻工艺形成第一色阻；
步骤22、在所述TFT层和第一色阻上涂布第二色阻膜层，并通过一道光罩制程同时形成位于第一色阻上的次要光阻间隙物和位于TFT层上的第二色阻；
步骤23、在所述TFT层、第一色阻和第二色阻上涂布第三色阻膜层，并通过一道光罩制程同时形成位于第二色阻上的主要光阻间隙物和位于TFT层上的第三色阻；
其中，所述步骤23中涂布的第三色阻膜层厚度大于所述所述步骤22中涂布的第二色阻膜层厚度，从而使得所述步骤23中形成的主要光阻间隙物的高度大于所述步骤22中形成的次要光阻间隙物的高度。
所述步骤2的具体步骤包括：
所述步骤2中，所述色阻层包括第一色阻、第二色阻和第三色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于次要光阻间隙物的高度；
步骤21、在所述TFT层上涂布第一色阻膜层，并通过光刻工艺形成第一色阻；
步骤22、在所述TFT层和第一色阻上涂布第二色阻膜层，并通过半色调网点光罩制程同时形成位于第一色阻上的主要光阻间隙物、次要光阻间隙物以及位于TFT层上的第二色阻。
所述步骤2的具体步骤包括：
所述步骤2中，所述色阻层包括第一色阻、第二色阻和第三色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于次要光阻间隙物的高度；
步骤21、在所述TFT层上涂布第一色阻膜层，并通过光刻工艺形成第一色阻；
步骤22、在所述TFT层上涂布第二色阻膜层，并通过光刻工艺形成第二色阻；
步骤23、在所述TFT层、第一色阻和第二色阻上涂布第三色阻膜层，通过半色调网点光罩制程同时形成位于第一色阻上的次要光阻间隙物、位于第二色阻上的主要光阻间隙物以及位于TFT层上的第三色阻。
所述步骤2中，所述色阻层包括第一色阻、第二色阻、第三色阻和第四色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于所述次要光阻间隙物的高度。
本发明还提供一种液晶面板，包括：第一基板、设于第一基板上的TFT层、设于TFT层上的色阻层、设于色阻层上的光阻间隙物层、设于色阻层和光阻间隙物层上的保护层、贯穿色阻层和保护层的过孔、形成于保护层上通过过孔与TFT层电性连接的像素电极层、以及与第一基板相对设置的第二基板，所述光阻间隙物层与所述色阻层中的一种或者数种色阻的材料相同，并且所述光阻间隙物层与所述色阻层在制作过程中同时形成；
其中，所述色阻层包括第一色阻、第二色阻和第三色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于所述次要光阻间隙物的高度，所述次要光阻间隙物位于第一色阻上，所述主要光阻间隙物位于第二色阻上；所述次要光阻间隙物与第二色阻的材料相同，且二者在同一光罩制程中形成；所述主要光阻间隙物和第三色阻的材料相同，且二者在同一光罩制程中形成。
本发明的有益效果：本发明提供的一种液晶面板的制作方法，在制作色阻层的同时形成光阻间隙物层，利用不同色阻膜层的厚度差异或者通过半色网点光罩制程形成高度不同的主要光阻间隙物和次要光阻间隙物，该制作方法可以简化制程，节省光罩，提高生产效率，本发明提供的一种液晶面板，利用色阻材料在阵列基板一侧形成光阻间隙物层，从而降低了MM  mura发生概率，降低贴合制程中上下基板的对位要求。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的液晶面板的结构示意图；
图2为本发明液晶面板的制作方法的示意流程图；
图3为本发明液晶面板第一实施例的结构示意图；
图4为本发明液晶面板第二实施例的结构示意图；
图5为本发明液晶面板第二实施例的制作方法步骤22的示意图；
图6为本发明液晶面板第三实施例的结构示意图；
图7为本发明液晶面板第三实施例的制作方法步骤23的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3，为本发明液晶面板第一实施例的结构示意图。如图3所示，本发明还提供一种液晶面板，包括：第一基板1、设于第一基板1上的TFT层2、设于TFT层2上的色阻层3、设于色阻层3上的光阻间隙物层4、设于色阻层3和光阻间隙物层4上的保护层5、贯穿色阻层3和保护层5的过孔6、形成于保护层5上通过过孔6与TFT层2电性连接的像素电极层7、以及与第一基板1相对设置的第二基板8。其中，所述光阻间隙物层4与所述色阻层3中的一种或者数种色阻的材料相同，并且所述光阻间隙物层4与所述色阻层3在制作过程中同时形成。
所述色阻层3包括第一色阻31、第二色阻32和第三色阻33，所述第一、第二和第三色阻分别为红色色阻、绿色色阻和蓝色色阻这三种色阻的任意排列组合，所述光阻间隙物层4包括主要光阻间隙物41和次要光阻间隙物42，并且所述主要光阻间隙物41的高度大于次要光阻间隙物42的高度。
在本发明第一实施例中，所述次要光阻间隙物42位于第一色阻31上， 所述主要光阻间隙物41位于第二色阻32上；所述次要光阻间隙物42与第二色阻32的材料相同，且二者在同一光罩制程中形成；所述主要光阻间隙物41和第三色阻33的材料相同，且二者在同一光罩制程中形成。
优选的，所述第一基板1和第二基板8均为玻璃基板。
具体的，所述TFT层2包括第一金属层21、栅极绝缘层22、半导体层23、第二金属层24和保护层25。其中，所述半导体层23可以是由a-Si层和n+Si层组成的双层结构，也可以是由IGZO(铟镓锌氧化物)层构成的单层结构；所述第一金属层21和第二金属层24的材料可以为铜或铝。
请参阅图2，本发明液晶面板第一实施例的制作方法包括以下步骤：
步骤1、提供第一基板1，在所述第一基板1上沉积TFT层2。
具体的，所述TFT层2包括第一金属层21、栅极绝缘层22、半导体层23、第二金属层24和保护层25。其中，所述半导体层23可以是由a-Si层和n+Si层组成的双层结构，也可以是由IGZO(铟镓锌氧化物)层构成的单层结构；所述第一金属层21和第二金属层24的材料可以为铜或铝。
步骤2、在所述TFT层2上形成色阻层3和光阻间隙物层4，所述光阻间隙物层4位于所述色阻层3上方，且与所述色阻层3在制作过程中同时形成。
具体的，所述色阻层3包括第一色阻31、第二色阻32和第三色阻33，所述第一、第二和第三色阻分别为红色色阻、绿色色阻和蓝色色阻这三种色阻的任意排列组合，所述光阻间隙物层4包括主要光阻间隙物41和次要光阻间隙物42，并且所述主要光阻间隙物41的高度大于次要光阻间隙物42的高度。
在该第一实施例中，所述步骤2包括以下具体步骤：
步骤21、在所述TFT层2上涂布第一色阻膜层，并通过光刻工艺形成第一色阻31。
步骤22、在所述TFT层2和第一色阻31上涂布第二色阻膜层，并通过一道光罩制程同时形成位于第一色阻31上的次要光阻间隙物42和位于TFT层2上的第二色阻32。
步骤23、在所述TFT层2、第一色阻31和第二色阻32上涂布第三色阻膜层，并通过一道光罩制程同时形成位于第二色阻32上的主要光阻间隙物41和位于TFT层2上的第三色阻33。
其中，所述步骤23中涂布的第三色阻膜层厚度大于所述所述步骤22中涂布的第二色阻膜层厚度，从而使得所述步骤23中形成的主要光阻间隙物41的高度大于所述步骤22中形成的次要光阻间隙物42的高度。
步骤3、在色阻层3和光阻间隙物层4上形成保护层5，并在色阻层3和保护层5上通过干蚀刻或湿蚀刻工艺形成过孔6。
步骤4、在所述保护层5上通过溅射工艺形成ITO(氧化铟锡)薄膜，通过湿蚀刻工艺形成像素电极层7，所述像素电极层7通过过孔6与TFT层2形成电性连接。
步骤5、提供第二基板8，在所述第一基板1与第二基板8之间灌注液晶分子，并对所述第一基板1与第二基板8进行封装。
优选的，所述第一基板1和第二基板8均为玻璃基板。
请参阅图4，为本发明液晶面板第二实施例的结构示意图，与本发明液晶面板第一实施例的结构相比，其不同之处在于，所述光阻间隙物层4的结构略有不同。
本发明液晶面板第二实施例中，所述色阻层3包括依次排列的第一色阻31、第二色阻32和第三色阻33，所述光阻间隙物层4包括主要光阻间隙物41和次要光阻间隙物42，所述主要光阻间隙物41的高度大于次要光阻间隙物42的高度。
其中，所述光阻间隙物层4的主要光阻间隙物41和次要光阻间隙物42均位于第一色阻31上。所述主要光阻间隙物41、次要光阻间隙物42与所述色阻层3中的第二色阻32的材料相同，且三者在同一光罩制程中形成。
本发明液晶面板第二实施例的制作方法与本发明液晶面板第一实施例的制作方法类似，其不同之处在于，所述步骤2的具体步骤不同，本发明液晶面板第二实施例的制作方法中，所述步骤2的具体步骤包括：
步骤21、在所述TFT层2上涂布第一色阻膜层，并通过光刻工艺形成第一色阻31。
步骤22、如图5所示，在所述TFT层2和第一色阻31上涂布第二色阻膜层，并通过半色调网点光罩制程同时形成位于第一色阻31上的主要光阻间隙物41、次要光阻间隙物42以及位于TFT层2上的第二色阻32。
在所述步骤22中，通过采用半色调网点光罩制程同时制作高度不同的主要光阻间隙物41和次要光阻间隙物42，可以简化制程，节省光罩，提高生产效率。
步骤23、在所述TFT层2、第一色阻31和第二色阻32上涂布第三色阻膜层，并通过光刻工艺形成第三色阻33。
请参阅图6，为本发明液晶面板第三实施例的结构示意图，与本发明液晶面板第一实施例的结构相比，其不同之处在于，所述光阻间隙物层4的结构略有不同。
本发明液晶面板第三实施例中，所述色阻层3包括依次排列的第一色阻31、第二色阻32和第三色阻33，所述光阻间隙物层4包括主要光阻间隙物41和次要光阻间隙物42，所述主要光阻间隙物41的高度大于次要光阻间隙物42的高度。
其中，所述次要光阻间隙物42位于第一色阻31上，所述主要光阻间隙物41位于第二色阻32上，所述主要光阻间隙物41、次要光阻间隙物42和第三色阻33的材料相同，且三者在同一光罩制程中形成。
本发明液晶面板第三实施例的制作方法与本发明液晶面板第一实施例的制作方法类似，其不同之处在于，所述步骤2的具体步骤不同，本发明液晶面板第三实施例的制作方法中，所述步骤2的具体步骤包括：
步骤21、在所述TFT层2上涂布第一色阻膜层，并通过光刻工艺形成第一色阻31。
步骤22、在所述TFT层2上涂布第二色阻膜层，并通过光刻工艺形成第二色阻32。
步骤23、如图7所示，在所述TFT层2、第一色阻31和第二色阻32上涂布第三色阻膜层，通过半色调网点光罩制程同时形成位于第一色阻31上的次要光阻间隙物42、位于第二色阻32上的主要光阻间隙物41以及位于TFT层2上的第三色阻33。
在所述步骤23中，通过采用半色调网点光罩制程同时制作高度不同的主要光阻间隙物41和次要光阻间隙物42，可以简化制程，节省光罩，提高生产效率。
本发明的发明构思同样适用于色阻层包括四种色阻的情况，即所述色阻层包括第一色阻、第二色阻、第三色阻和第四色阻，所述第一、第二、第三和第四色阻分别为红色色阻、绿色色阻、蓝色色阻和白色色阻这四种色阻的任意排列组合，或者为红色色阻、绿色色阻、蓝色色阻和黄色色阻这四种色阻的任意排列组合。
综上所述，本发明提供的一种液晶面板，利用色阻材料在TFT阵列基板一侧形成光阻间隙物层，从而降低了MM mura发生概率，降低贴合制程中上下基板的对位要求。本发明还提供的一种液晶面板的制作方法，在制作色阻层的同时形成光阻间隙物层，利用不同色阻膜层的厚度差异或者通过半色网点光罩制程形成高度不同的主要光阻间隙物和次要光阻间隙物，该制作方法可以简化制程，节省光罩，提高生产效率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形 都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种液晶面板，包括：第一基板、设于第一基板上的TFT层、设于TFT层上的色阻层、设于色阻层上的光阻间隙物层、设于色阻层和光阻间隙物层上的保护层、贯穿色阻层和保护层的过孔、形成于保护层上通过过孔与TFT层电性连接的像素电极层、以及与第一基板相对设置的第二基板，所述光阻间隙物层与所述色阻层中的一种或者数种色阻的材料相同，并且所述光阻间隙物层与所述色阻层在制作过程中同时形成。
  2. 如权利要求1所述的液晶面板，其中，所述色阻层包括第一色阻、第二色阻和第三色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于所述次要光阻间隙物的高度，所述次要光阻间隙物位于第一色阻上，所述主要光阻间隙物位于第二色阻上；所述次要光阻间隙物与第二色阻的材料相同，且二者在同一光罩制程中形成；所述主要光阻间隙物和第三色阻的材料相同，且二者在同一光罩制程中形成。
  3. 如权利要求1所述的液晶面板，其中，所述色阻层包括第一色阻、第二色阻和第三色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于所述次要光阻间隙物的高度，所述主要光阻间隙物和次要光阻间隙物位于第一色阻上；所述主要光阻间隙物、次要光阻间隙物和第二色阻的材料相同，且三者在同一光罩制程中形成。
  4. 如权利要求1所述的液晶面板，其中，所述色阻层包括第一色阻、第二色阻和第三色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于所述次要光阻间隙物的高度，所述次要光阻间隙物位于第一色阻上，所述主要光阻间隙物位于第二色阻上；所述主要光阻间隙物、次要光阻间隙物和第三色阻的材料相同，且三者在同一光罩制程中形成。
  5. 如权利要求1所述的液晶面板，其中，所述色阻层包括第一色阻、第二色阻、第三色阻和第四色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于所述次要光阻间隙物的高度。
  6. 一种液晶面板的制作方法，包括以下步骤：
    步骤1、提供第一基板，在所述第一基板上沉积TFT层；
    步骤2、在所述TFT层上形成色阻层和光阻间隙物层，所述光阻间隙物层位于所述色阻层上方，且与所述色阻层在制作过程中同时形成；
    步骤3、在色阻层和光阻间隙物层上形成保护层，并在色阻层和保护层上通过干蚀刻或湿蚀刻工艺形成过孔；
    步骤4、在所述保护层上通过溅射工艺形成ITO薄膜，通过湿蚀刻工艺形成像素电极层，所述像素电极层通过过孔与TFT层形成电性连接；
    步骤5、提供第二基板，在所述第一基板与第二基板之间灌注液晶分子，并对所述第一基板与第二基板进行封装。
  7. 如权利要求6所述的液晶面板的制作方法，其中，所述步骤2的具体步骤包括：
    所述步骤2中，所述色阻层包括第一色阻、第二色阻和第三色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于次要光阻间隙物的高度；
    步骤21、在所述TFT层上涂布第一色阻膜层，并通过光刻工艺形成第一色阻；
    步骤22、在所述TFT层和第一色阻上涂布第二色阻膜层，并通过一道光罩制程同时形成位于第一色阻上的次要光阻间隙物和位于TFT层上的第二色阻；
    步骤23、在所述TFT层、第一色阻和第二色阻上涂布第三色阻膜层，并通过一道光罩制程同时形成位于第二色阻上的主要光阻间隙物和位于TFT层上的第三色阻；
    其中，所述步骤23中涂布的第三色阻膜层厚度大于所述所述步骤22中涂布的第二色阻膜层厚度，从而使得所述步骤23中形成的主要光阻间隙物的高度大于所述步骤22中形成的次要光阻间隙物的高度。
  8. 如权利要求6所述的液晶面板的制作方法，其中，所述步骤2的具体步骤包括：
    所述步骤2中，所述色阻层包括第一色阻、第二色阻和第三色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于次要光阻间隙物的高度；
    步骤21、在所述TFT层上涂布第一色阻膜层，并通过光刻工艺形成第一色阻；
    步骤22、在所述TFT层和第一色阻上涂布第二色阻膜层，并通过半色调网点光罩制程同时形成位于第一色阻上的主要光阻间隙物、次要光阻间隙物以及位于TFT层上的第二色阻。
  9. 如权利要求6所述的液晶面板的制作方法，其中，所述步骤2的具体步骤包括：
    所述步骤2中，所述色阻层包括第一色阻、第二色阻和第三色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于次要光阻间隙物的高度；
    步骤21、在所述TFT层上涂布第一色阻膜层，并通过光刻工艺形成第一色阻；
    步骤22、在所述TFT层上涂布第二色阻膜层，并通过光刻工艺形成第二色阻；
    步骤23、在所述TFT层、第一色阻和第二色阻上涂布第三色阻膜层，通过半色调网点光罩制程同时形成位于第一色阻上的次要光阻间隙物、位于第二色阻上的主要光阻间隙物以及位于TFT层上的第三色阻。
  10. 如权利要求6所述的液晶面板的制作方法，其中，所述步骤2中，所述色阻层包括第一色阻、第二色阻、第三色阻和第四色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于所述次要光阻间隙物的高度。
  11. 一种液晶面板，包括：第一基板、设于第一基板上的TFT层、设于TFT层上的色阻层、设于色阻层上的光阻间隙物层、设于色阻层和光阻间隙物层上的保护层、贯穿色阻层和保护层的过孔、形成于保护层上通过过孔与TFT层电性连接的像素电极层、以及与第一基板相对设置的第二基板，所述光阻间隙物层与所述色阻层中的一种或者数种色阻的材料相同，并且所述光阻间隙物层与所述色阻层在制作过程中同时形成；
    其中，所述色阻层包括第一色阻、第二色阻和第三色阻，所述光阻间隙物层包括主要光阻间隙物和次要光阻间隙物，并且所述主要光阻间隙物的高度大于所述次要光阻间隙物的高度，所述次要光阻间隙物位于第一色阻上，所述主要光阻间隙物位于第二色阻上；所述次要光阻间隙物与第二色阻的材料相同，且二者在同一光罩制程中形成；所述主要光阻间隙物和第三色阻的材料相同，且二者在同一光罩制程中形成。
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