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WO2016076652A1 - Black matrix photoresist composition for liquid crystal display panel - Google Patents

Black matrix photoresist composition for liquid crystal display panel Download PDF

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Publication number
WO2016076652A1
WO2016076652A1 PCT/KR2015/012191 KR2015012191W WO2016076652A1 WO 2016076652 A1 WO2016076652 A1 WO 2016076652A1 KR 2015012191 W KR2015012191 W KR 2015012191W WO 2016076652 A1 WO2016076652 A1 WO 2016076652A1
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WO
WIPO (PCT)
Prior art keywords
hydroxy
alkyl
meth
acrylate
black matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2015/012191
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French (fr)
Korean (ko)
Inventor
오천림
김학준
최정식
김태운
안정민
이건표
조용일
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Samyang Corp
Original Assignee
Samyang Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samyang Corp filed Critical Samyang Corp
Priority to JP2017525535A priority Critical patent/JP2017537347A/en
Priority to CN201580073141.9A priority patent/CN107111232A/en
Priority claimed from KR1020150158807A external-priority patent/KR101808818B1/en
Publication of WO2016076652A1 publication Critical patent/WO2016076652A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements

Definitions

  • the present invention relates to a black matrix, which is a light-sensitive photosensitive resin composition used for a liquid crystal display. More specifically, the present invention relates to a photosensitive resin composition that can be used to prepare black matrices used in liquid crystal displays using photolithography.
  • the black matrix photoresist composition is an essential material for the production of color filters included in display devices such as color filters, liquid crystal displays, organic electroluminescent devices, and display panels.
  • the color filter of the liquid crystal display device is used to prevent the mixing of R (red), G (green), B (blue), or in the touch panel device may be used for the bezel to cover the X, Y metal electrodes.
  • LTPS low temperature poly-silicon
  • oxide thin film transistors have been actively studied as devices for use in high-resolution driving over UD (Ultra Definition) and high-speed driving of 240 Hz or more.
  • the oxide thin film transistor changes the properties of the semiconductor by light
  • the above-described problem is minimized by introducing a light blocking layer.
  • the light shielding layer is mainly formed of a metal light shielding layer since a subsequent process such as PE-CVD is performed at a high temperature after the formation of the light shielding layer, the metal light shielding layer has high reflectivity and light is reflected between the source, the drain electrode, and the light shielding layer.
  • the parasitic voltage is generated between the source and drain electrodes to act as an element that resists the operation of the device and increases the load of the data line.
  • a light shielding layer may be introduced to eliminate a characteristic in which the contrast ratio is significantly lowered by reflection of upper and lower metal interconnections.
  • Patent Document 1 KR 2007-0131523 (2007.12.14)
  • Patent Document 2 [Patent Document 2] KR 2009-0131415 (2009.12.28)
  • Patent Document 3 JP 2011-247437 (2011.11.11)
  • the problem to be solved by the present invention is to provide a black matrix photoresist composition for a liquid crystal display panel which suppresses the effect of reducing the reflectance and inhibits the occurrence of color difference, and is advantageous in the processability of the pattern formation and the development process because the deep curing is advantageous.
  • the purpose is.
  • the present invention provides a black matrix photoresist composition using an oxime ester fluorene derivative compound represented by the following Chemical Formula 1 as a photopolymerization initiator.
  • R 1 to R 3 are each independently hydrogen, halogen, (C1-C20) alkyl, (C6-C20) aryl, (C1-C20) alkoxy, (C6-C20) aryl (C1-C20) alkyl, hydroxy ( C1-C20) alkyl, hydroxy (C1-C20) alkoxy (C1-C20) alkyl or (C3-C20) cycloalkyl;
  • A is hydrogen, (C1-C20) alkyl, (C6-C20) aryl, (C1-C20) alkoxy, (C6-C20) aryl (C1-C20) alkyl, hydroxy (C1-C20) alkyl, hydroxy ( C1-C20) alkoxy (C1-C20) alkyl, (C3-C20) cycloalkyl, amino, nitro, cyano or hydroxy;
  • n 0 or 1
  • Substituents including the "alkyl”, “alkoxy” and other “alkyl” moieties described in the present invention include all linear or pulverized forms, and "cycloalkyl” includes not only a single ring system but also various ring hydrocarbons.
  • "Aryl” described in the present invention is an organic radical derived from an aromatic hydrocarbon by one hydrogen removal, and is a single or fused ring containing 4 to 7, preferably 5 or 6 ring atoms in each ring as appropriate. It includes a system, including a form in which a plurality of aryl is connected by a single bond.
  • Hydroxyalkyl means OH-alkyl in which a hydroxy group is bonded to the alkyl group defined above, and "hydroxyalkoxyalkyl” means hydroxyalkyl- O -alkyl in which an alkoxy group is bonded to the hydroxyalkyl group.
  • the '(C1-C20) alkyl' group described in the present invention is preferably (C1-C10) alkyl, more preferably (C1-C6) alkyl.
  • the '(C6-C20) aryl' group is preferably (C6-C18) aryl.
  • the '(C1-C20) alkoxy' group is preferably (C1-C10) alkoxy, more preferably (C1-C4) alkoxy.
  • the '(C6-C20) aryl (C1-C20) alkyl' group is preferably (C6-C18) aryl (C1-C10) alkyl, more preferably (C6-C18) aryl (C1-C6) alkyl.
  • the 'hydroxy (C 1 -C 20) alkyl' group is preferably hydroxy (C 1 -C 10) alkyl, more preferably hydroxy (C 1 -C 6) alkyl.
  • the 'hydroxy (C1-C20) alkoxy (C1-C20) alkyl' group is preferably hydroxy (C1-C10) alkoxy (C1-C10) alkyl, more preferably hydroxy (C1-C4) alkoxy (C1) -C6) alkyl.
  • the '(C3-C20) cycloalkyl' group is preferably (C3-C10) cycloalkyl.
  • R 1 to R 3 are each independently hydrogen, bromo, chloro, iodo, methyl, ethyl, n -propyl, i -propyl, n -butyl, i -butyl, t -butyl, n -pentyl , i -pentyl, n -hexyl, i -hexyl, phenyl, naphthyl, biphenyl, terphenyl, anthryl, indenyl, phenanthryl, methoxy, ethoxy, n -propyloxy, i -propyloxy, n -Butoxy, i -butoxy, t -butoxy, hydroxymethyl, hydroxyethyl, hydroxy n -propyl, hydroxy n -butyl, hydroxy i -butyl, hydroxy n -pentyl, hydroxy i- Pen
  • A is hydrogen, methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, t-butyl, phenyl, naphthyl, biphenyl, terphenyl anthryl, indenyl, phenanthryl, methoxy, Ethoxy, propaneoxy, butoxy, hydroxymethyl, hydroxyethyl, hydroxypropyl, hydroxybutyl, hydroxymethoxymethyl, hydroxymethoxyethyl, hydroxymethoxypropyl, hydroxymethoxybutyl, hydroxy Hydroxyethoxymethyl, hydroxyethoxyethyl, hydroxyethoxypropyl, hydroxyethoxybutyl, amino, nitro, cyano or hydroxy, but is not limited thereto.
  • oxime ester fluorene derivative compound As the oxime ester fluorene derivative compound according to the present invention, the following compounds are representatively mentioned, but the following compounds are not intended to limit the present invention.
  • the oxime ester fluorene derivative compound represented by Chemical Formula 1 is included in the black matrix photoresist composition as a photopolymerization initiator.
  • the black matrix photoresist composition of the present invention includes an oxime ester fluorene derivative compound represented by Chemical Formula 1, a binder resin, a polymerizable compound having an ethylenically unsaturated bond, a colorant, and the like, and a reduction in reflectance and inhibition of color difference generation. It is excellent in thin film properties, such as the point which suppresses a phenomenon and advantageously deep-hardens, and is advantageous for pattern formation.
  • an acrylic resin, a cardo resin, a silicone resin, or a mixed resin thereof, which is an acrylic polymer or an acrylic polymer having an acrylic unsaturated bond in the side chain, may be used as the binder resin.
  • the binder resin may control its content in order to provide pattern properties, thin film properties such as heat resistance and chemical resistance. For example, 3 to 50 wt% may be used based on 100 wt% of the photoresist composition.
  • the binder resin preferably has a weight average molecular weight of 2,000 to 300,000, and a dispersion degree of 1.0 to 10.0, more preferably a weight average molecular weight of 4,000 to 100,000,00.
  • the acrylic polymer is a copolymer of monomers including the following monomers, and examples of such monomers include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate and pentyl ( Meth) acrylate, hexyl (meth) acrylate, cyclohexyl (meth) acrylate, heptyl (meth) acrylate, octyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, lauryl (Meth) acrylate, dodecyl (meth) acrylate, tetradecyl (meth) acrylate and hexadecyl (meth) acrylate, isobornyl (meth) acrylate, adamantyl (meth) acrylate, dicyclopentanyl (Meth)
  • the acrylic polymer having an acrylic unsaturated bond in the side chain is a copolymer obtained by adding an epoxy resin to an acrylic copolymer containing carboxylic acid, such as acrylic acid, methacrylic acid, itaconic acid, maleic acid and maleic acid monoalkyl ester.
  • carboxylic acid such as acrylic acid, methacrylic acid, itaconic acid, maleic acid and maleic acid monoalkyl ester.
  • an acrylic polymer having an acrylic unsaturated bond in the side chain is a copolymer in which a carboxylic acid is added to an acrylic copolymer containing an epoxy group, and glycidyl acrylate, glycidyl methacrylate, 3,4- Acrylic monomer and methyl (meth) acrylate containing epoxy groups, such as epoxy butyl (meth) acrylate, 2, 3- epoxycyclohexyl (meth) acrylate, and 3, 4- epoxycyclohexyl methyl (meth) acrylate, Alkyl (meth) acrylates, such as hexyl (meth) acrylate, cyclohexyl (meth) acrylate, isobonyl (meth) acrylate, adamantyl (meth) acrylate, dicyclopentanyl (meth) acrylate, and dish Clofenthenyl (meth) acrylate, benzyl (meth) acrylate, 2-meth
  • a cardo-based resin may be used as the binder resin, and the cardo-based resin refers to an acrylic binder resin including a fluorene group in a main chain, and is not particularly limited in structure.
  • siloxane resin may be used as the silicone resin, and more specifically, the siloxane resin disclosed in Korean Patent No. 10-1537771 may be used as the silicone resin, and a manufacturing method may also be prepared by the method described in the patent. Can be.
  • the siloxane resin may have an acid value in the range of 10 to 200 mgKOH / g resin when titrating KOH.
  • the siloxane resin usable in one embodiment of the present invention may be a siloxane resin including a polymerized unit represented by the following Chemical Formula 2 and a polymerized unit represented by the following Chemical Formula 3.
  • R 4 is a linear or branched alkylene group having 1 to 20 carbon atoms, an arylene group having 6 to 20 carbon atoms, an alkylene group having 7 to 20 carbon atoms substituted with an aryl group, and an arylene group having 7 to 20 carbon atoms substituted with an alkyl group. Or a group having 7 to 20 carbon atoms, in which an alkylene group and an arylene group are connected.
  • X is hydroxy, carboxylic acid, carboxylic anhydride, carboxylic anhydride derivative, imide, imide derivative, amide, amide derivative, amine or mercanto,
  • Each R 4 is independently hydrogen, a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 10 carbon atoms, an unsaturated hydrocarbon group having 2 to 10 carbon atoms, or an acyloxy group having 2 to 10 carbon atoms,
  • the siloxane resin may be composed of 5 to 40 mol% of the polymerized units of Formula 1 and 95 to 60 mol% of the polymerized units of Formula 2 based on 100 mol% of the polymerized units of Formula 1 and the polymerized units of Formula 2.
  • siloxane resin As a specific example of the siloxane resin, a siloxane resin including the first polymer unit represented by the following Chemical Formulas 4 to 17 and the second polymer unit listed below may be used, but is not limited thereto.
  • n and n may be each independently an integer of 1 to 20.
  • tetraalkoxy silane, trialkoxy silane, methyl trialkoxy silane, ethyl trialkoxy silane, n-propyl trialkoxy silane isopropyl trialkoxy silane, n-butyl trialkoxy silane , tert-butyl trialkoxy silane, phenyl trialkoxy silane, naphtha trialkoxy silane, vinyl trialkoxy silane, methacryloxymethyl trialkoxy silane, 2-methacryloxyethyl trialkoxy silane, 3-methacryloxypropyl trialkoxy silane , 3-methacryloxypropyl trialkoxy silane , 3-methacryloxypropyl methyl dialkoxy silane, 3-methacryloxypropyl ethyl dialkoxy silane, acryloxymethyl trialkoxy silane, 2-acryloxyethyl trialkoxy silane, 3-acryloxypropyl trialkoxy silane, 3- Acryloxypropyl methyl dialkoxy silane, 3-acryloxy
  • the polymerizable compound having an ethylenically unsaturated bond serves to form a pattern by crosslinking by photoreaction at the time of pattern formation and crosslinking at high temperature to impart chemical resistance and heat resistance.
  • the polymerizable compound having an ethylenically unsaturated bond may be contained in an amount of 1 to 200 parts by weight, preferably 10 to 150 parts by weight, more preferably 50 to 120 parts by weight, based on 100 parts by weight of the binder resin.
  • the polymerizable compound having an ethylenically unsaturated bond is specifically methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) acryl Alkyl ester of (meth) acrylic acid, such as the rate, glycidyl (meth) acrylate, polyethyleneglycol mono (meth) acrylate whose number of ethylene oxide groups is 2-14, ethylene glycol di (meth) acrylate, ethylene oxide group Polyethylene glycol di (meth) acrylate having a number of from 2 to 14, propylene glycol di (meth) acrylate having a number of from 2 to 14 of propylene oxide group, trimethylolpropanedi (meth) acrylate, bisphenol A diglycidyl ether Acrylic acid adduct, phthalic acid diester of dihydroxy ethyl (
  • the amount of the oxime ester fluorene derivative compound of Formula 1 included as a photopolymerization initiator in the black matrix photoresist composition of the present invention is a content for minimizing the reflectance of black matrix, suppressing color difference, and smoothing the deep curing It may be 0.01 to 50 parts by weight, preferably 0.02 to 25 parts by weight, 0.5 to 10 parts by weight based on 100 parts by weight of the polymerizable compound having an ethylenically unsaturated bond.
  • the degree of photocuring is ensured, thereby making it easier to form a pattern due to the developability difference between the exposed portion and the non-exposed portion, and preventing the formation of a T-shaped pattern due to excessive upper curing.
  • the desired pattern shape can be obtained.
  • a thioxanthone compound, acetophenone compound, biimidazole compound, triazine compound, thiol compound as an additional photopolymerization initiator in addition to the oxime ester fluorene derivative compound of Chemical Formula 1 It may further comprise one or two or more selected from the group consisting of O-acyl oxime compounds other than the compound represented by the formula (1).
  • thioxanthone type compound for example, thioxanthone, 2-chloro thioxanthone, 2-methyl thioxanthone, 2-isopropyl thioxanthone, 4-isopropyl thioxanthone, 2, 4- dichloro Thioxanthone, 2, 4- dimethyl thioxanthone, 2, 4- diethyl thioxanthone, 2, 4- diisopropyl thioxanthone, etc.
  • 2-chloro thioxanthone 2-methyl thioxanthone
  • 2-isopropyl thioxanthone 4-isopropyl thioxanthone
  • 2, 4- dichloro Thioxanthone 2, 4- dimethyl thioxanthone, 2, 4- diethyl thioxanthone, 2, 4- diisopropyl thioxanthone, etc.
  • 2-methyl-1- [4- (methylthio) phenyl] -2- morpholino propane- 1-one, 2-benzyl-2- dimethylamino-1- ( 4-morpholinophenyl) butan-1-one, 2- (4-methylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one, and the like can be used.
  • biimidazole type compound 2,2'-bis (2-chlorophenyl) -4,4 ', 5,5'- tetraphenyl- 1,2'-biimidazole, 2,2, for example '-Bis (2,4-dichlororophenyl) -4,4', 5,5'-tetraphenyl-1,2'-biimidazole, 2,2'-bis (2,4,6-trichloro Phenyl) -4,4 ', 5,5'-tetraphenyl-1,2'-biimidazole and the like.
  • triazine-based compound examples include 2,4,6-tris (trichloromethyl) -s-triazine, 2-methyl-4,6-bis (trichloromethyl) -s-triazine and 2- [2- (5-methylfuran-2-yl) ethenyl] -4,6-bis (trichloromethyl) -s-triazine, 2- [2- (furan-2-yl) ethenyl] -4 , 6-bis (trichloromethyl) -s-triazine, 2- [2- (4-diethylamino-2-methylphenyl) ethenyl] -4,6-bis (trichloromethyl) -s-triazine , 2- [2- (3,4-dimethoxyphenyl) ethenyl] -4,6-bis (trichloromethyl) -s-triazine, 2- (4-methoxyphenyl) -4,6-bis (Trichloromethyl) -s
  • O-acyl oxime type compound 1,2-octanedione, 1- [4- (phenylthio) phenyl] -2- (O-benzoyl oxime), ethanone-1- [9-ethyl, for example] -6- (2-methylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime), ethanone-1- [9-ethyl-6- (2-methyl-4-tetrahydro Furanylmethoxybenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime), ethanone-1- [9-ethyl-6-X2-methyl-4- (2,2-dimethyl- 1,3-dioxoranyl) methoxybenzoyl r-9H-carbazol-3-yl] -1- (O-acetyloxime) and the like can be used.
  • the additional photopolymerization initiator other than the oxime ester fluorene derivative compound of formula 1 used as the photopolymerization initiator in the photoresist composition of the present invention is 0.01 to 20 parts by weight, preferably 100 parts by weight of the polymerizable compound having an ethylenically unsaturated bond. 0.05 to 10 parts by weight may be used.
  • the black matrix photoresist composition of the present invention may further include a silicone-based compound having an epoxy group or an amine group as an adhesion aid as necessary.
  • the silicone-based compound may improve adhesion between the ITO electrode and the photoresist composition and may increase heat resistance after curing.
  • the silicone compound having an epoxy group or an amine group include (3-glycidoxy propyl) trimethoxysilane, (3-glycidoxy propyl) triethoxysilane, and (3-glycidoxy propyl) methyldimethoxy silane.
  • Phosphorus (3-glycidoxypropyl) methyldiethoxysilane, (3-glycidoxypropyl) dimethylmethoxysilane, (3-glycidoxypropyl) dimethylethoxysilane, 3,4-epoxy butyl Trimethoxysilane, 3,4-epoxybutyltriethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrie Methoxysilane, aminopropyltrimethoxy silane, and the like, and these may be used alone or in combination of two or more thereof.
  • the content of the silicon compound having the epoxy group or the amine group may be 0.0001 to 20 parts by weight based on 100 parts by weight of the binder resin.
  • the black matrix photoresist composition of the present invention may further include a compatible additive such as a photosensitizer, a thermal polymerization inhibitor, an antifoaming agent, a leveling agent and the like as necessary.
  • a compatible additive such as a photosensitizer, a thermal polymerization inhibitor, an antifoaming agent, a leveling agent and the like as necessary.
  • the colorant of the present invention at least one selected from carbon black, titanium black, acekylene black, aniline black, perylene black, strontium titanate, chromium oxide, and ceria, which preferably exhibits light blocking properties, may be used.
  • the content of the colorant may be 1 to 300 parts by weight, preferably 3 to 200 parts by weight, more preferably 5 to 150 parts by weight based on 100 parts by weight of the binder resin.
  • the effect of light shielding may be improved, and in addition, process characteristics and electrical characteristics for pattern formation may be improved.
  • the black matrix photoresist composition according to the exemplary embodiment of the present invention may form a pattern through spin coating on a substrate by adding a solvent and then irradiating ultraviolet rays using a mask to develop the alkaline developer.
  • the content of the solvent may be 10 to 3,000 parts by weight, preferably 20 to 1,000 parts by weight, more preferably 30 to 500 parts by weight, based on 100 parts by weight of the binder resin.
  • the solvent may be ethyl acetate, butyl acetate, diethylene glycol dimethyl ether, diethylene glycol dimethyl ethyl ether, methyl methoxy propionate, ethyl ethoxy propion, in consideration of compatibility with binder resins, photopolymerization initiators and other compounds.
  • examples of the colorant included for application to the black matrix forming resist of the present invention include carbon black, titanium black, aniline black, and C.I. pigment black 7.
  • the black matrix photoresist composition is used as an photopolymerization initiator with an oxime ester fluorene derivative compound to suppress the effect of reducing the reflectance of the black matrix thin film and inhibiting the occurrence of color difference, and advantageously, deep curing is advantageous for the formation of a pattern.
  • an advantage that can be usefully used in the manufacture of a thin film.
  • the reaction temperature was raised to 85 ° C., and the reaction proceeded at the elevated temperature for 6 hours.
  • tetrahydrotrofuran and methanol were evaporated off in an appropriate amount, extracted with ether and water, and the organic phase was recovered. The remaining alcohol and solvent were evaporated to remove 54g of siloxane resin.
  • the obtained siloxane resin is dissolved in 125.5 g of propylene glycol monomethyl ether acetate.
  • the weight average molecular weight of the obtained siloxane resin was 6,000.
  • Cardo-based binder resin used CAP-01 (manufacturer: Miwon).
  • the content of Compound 1 was added 1.0, 2.0, 3.0% by weight, and the carbon black was not added to check the solubility, and the other components and the stirring method were prepared in the same photoresist composition as in Example 2.
  • Black matrix photoresist compositions of Comparative Examples 1 to 3 were prepared in the same manner as in Example 2, except that the following Compounds 5, 6, and 7 were used as photopolymerization initiators, respectively.
  • the photoresist composition was prepared in the same manner as in Example 2, with other components and stirring methods using 1.0 wt%, 2.0 wt%, and 3.0 wt% of the compound 6 as the photopolymerization initiator and no carbon black added for solubility. Was prepared.
  • the photoresist was spin-coated on the glass substrate to form a coating film having a thickness of about 1.9 ⁇ m after the heat treatment at 100 ° C. for 90 seconds.
  • the exposure gap was 150 ⁇ m using a photomask to measure CD (critical demension) of a pattern formed by increasing the pressure from 20 mJ / cm 2 to 10 mJ / cm 2 with a high pressure mercury lamp. After exposure it was developed in 0.04% KOH aqueous solution. Thereafter, the mixture was washed with pure water, dried, and post-baked in a convection oven at 230 ° C. for 30 minutes to form a black matrix pattern.
  • the sensitivity was expressed by the sensitivity of each sample as the exposure amount at which the size of the CD (Critical demension) of the pattern was saturated.
  • the number of pinholes generated on the surface of the black matrix was determined to be less than 0 to 3, less than 3 to 7 in 10 mm X 10 mm, and more than 7 to be X.
  • the reflectance of the black matrix formed through a process such as prebake, exposure, and postbake was measured.
  • Example Sensitivity Surface Hardness Developing Process Range (sec) reflectivity(%) Solubility One 60 ⁇ 80 6.5 - 2 80 ⁇ 60 6.7 - 3 90 ⁇ 40 6.5 - 4 120 ⁇ 30 6.7 - 5 40 ⁇ 110 6.4 - 6 60 ⁇ 70 6.4 - 7 60 ⁇ 70 6.5 - 8 80 ⁇ 50 6.3 - 9 40 ⁇ 110 6.4 - 10 60 ⁇ 70 6.3 - 11 60 ⁇ 70 6.4 - 12 80 ⁇ 50 6.5 - 13 60 ⁇ 100 5.8 - 14 80 ⁇ 80 5.9 - 15 90 ⁇ 80 6.1 - 16 120 ⁇ 60 6.0 - 17 60 ⁇ 100 5.9 - 18 ⁇ 40 ⁇ 100 - ⁇ 19 ⁇ 40 ⁇ 120 - ⁇ 20 ⁇ 40 ⁇ 120 - ⁇ Comparative Example 1 150 X 10 7.4 - Comparative Example 2 70 ⁇ 70 7.8 - Comparative Example 3 80 ⁇ 70 7.2 - Comparative Example 4 ⁇ 40 ⁇ 80

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Materials For Photolithography (AREA)

Abstract

The present invention relates to a black material photoresist composition for a liquid crystal display panel, wherein the composition has no influence on the transmittance of the liquid crystal display panel due to the use of an excellent photopolymerization initiator, suppresses the reduction in the reflectance of a black matrix thin film and the inhibition of generation of color difference, and is advantageous in forming patterns due to favorable deep-section curing. Specifically, an oxime ester fluorene derivative compound used as a photopolymerization initiator in the present invention is represented by chemical formula 1 described in the specification.

Description

액정디스플레이 패널용 블랙매트릭스 포토레지스트 조성물Black Matrix Photoresist Composition for Liquid Crystal Display Panels

본 발명은 액정 디스플레이에 사용되는 차광용 감광성 수지 조성물인 블랙매트릭스에 관한 것이다. 보다 상세하게는, 액정디스플레이에 사용되는 블랙매트릭스를 포토리소그래피법을 사용하여 제조하는데 사용될 수 있는 감광성 수지 조성물에 관한 것이다.The present invention relates to a black matrix, which is a light-sensitive photosensitive resin composition used for a liquid crystal display. More specifically, the present invention relates to a photosensitive resin composition that can be used to prepare black matrices used in liquid crystal displays using photolithography.

본 출원은 2014년 11월 12일에 출원된 한국특허출원 제10-2014-0157328호에 기초한 우선권을 주장하며, 해당 출원의 명세서에 개시된 모든 내용은 본 출원에 원용된다.This application claims the priority based on Korean Patent Application No. 10-2014-0157328, filed November 12, 2014, all the contents disclosed in the specification of the application is incorporated in this application.

또한, 본 출원은 2015년 11월 12일에 출원된 한국특허출원 제10-2015-0158807호에 기초한 우선권을 주장하며, 해당 출원의 명세서에 개시된 모든 내용은 본 출원에 원용된다.In addition, this application claims the priority based on Korea Patent Application No. 10-2015-0158807 filed on November 12, 2015, all the contents disclosed in the specification of the application is incorporated in this application.

일반적으로 블랙 매트릭스 포토레지스트 조성물은 컬러필터, 액정 표시장치, 유기 전계 발광 소자, 디스플레이 패널 등의 표시 소자에 포함되는 컬러 필터의 제조에 필수적인 재료이다. 액정표시장치의 컬러필터에는 R(적색), G(녹색), B(청색)간의 혼색을 방지하기 위하여 사용이 되거나, 터치패널장치에서는 X, Y 금속 전극을 가리기 위한 베젤용으로 사용되기도 한다.In general, the black matrix photoresist composition is an essential material for the production of color filters included in display devices such as color filters, liquid crystal displays, organic electroluminescent devices, and display panels. The color filter of the liquid crystal display device is used to prevent the mixing of R (red), G (green), B (blue), or in the touch panel device may be used for the bezel to cover the X, Y metal electrodes.

디스플레이용 액정표시 장치에서는 최근 UD(Ultra Definition)이상의 고해상도 및 240Hz이상의 고속구동에 사용하기 위한 소자로 LTPS(Low Temperature Poly-Silicon)과 산화물 박막 트랜지스터가 활발히 연구되고 있다.In display liquid crystal display devices, low temperature poly-silicon (LTPS) and oxide thin film transistors have been actively studied as devices for use in high-resolution driving over UD (Ultra Definition) and high-speed driving of 240 Hz or more.

일반적으로 산화물 박막 트랜지스터는 광에 의해 반도체의 성질이 변하기 때문에 차광층을 도입하여 전술한 문제점을 최소화한다. 상기 차광층은 차광층 형성 후 PE-CVD 등 후속공정이 고온에서 진행되기 때문에 주로 금속 차광층을 사용하고 있으나, 금속 차광층은 반사도가 높아 소스, 드래인 전극과 차광층 사이로 광이 반사되어 들어오게 되고 소스, 드래인 전극 사이에 기생 전압이 발생하여 소자의 동작에 저항을 가하는 요소로 동작하게 되고 데이터 라인의 부하가 증가하게 되는 문제점이 있다.In general, since the oxide thin film transistor changes the properties of the semiconductor by light, the above-described problem is minimized by introducing a light blocking layer. Since the light shielding layer is mainly formed of a metal light shielding layer since a subsequent process such as PE-CVD is performed at a high temperature after the formation of the light shielding layer, the metal light shielding layer has high reflectivity and light is reflected between the source, the drain electrode, and the light shielding layer. There is a problem that the parasitic voltage is generated between the source and drain electrodes to act as an element that resists the operation of the device and increases the load of the data line.

특히, OLED 및 투명 디스플레이에서는 상, 하부 금속배선의 반사에 의해 명암비가 현저히 저하되는 특성을 없애기 위해 차광층을 도입하기도 한다.In particular, in OLEDs and transparent displays, a light shielding layer may be introduced to eliminate a characteristic in which the contrast ratio is significantly lowered by reflection of upper and lower metal interconnections.

[선행기술문헌][Preceding technical literature]

[특허문헌][Patent Documents]

(특허문헌 1) [특허문헌 1] KR 2007-0131523 (2007.12.14)(Patent Document 1) [Patent Document 1] KR 2007-0131523 (2007.12.14)

(특허문헌 2) [특허문헌 2] KR 2009-0131415 (2009.12.28)(Patent Document 2) [Patent Document 2] KR 2009-0131415 (2009.12.28)

(특허문헌 3) [특허문헌 3] JP 2011-247437 (2011.11.11)(Patent Document 3) [Patent Document 3] JP 2011-247437 (2011.11.11)

따라서 본 발명이 해결하고자 하는 과제는, 반사율의 감소 효과와 색차 발생의 저해 현상을 억제하고 아울러 심부 경화가 유리하여 패턴 형성 및 현상공정의 공정성에 유리한 액정디스플레이 패널용 블랙매트릭스 포토레지스트 조성물을 제공하는데 그 목적이 있다. Accordingly, the problem to be solved by the present invention is to provide a black matrix photoresist composition for a liquid crystal display panel which suppresses the effect of reducing the reflectance and inhibits the occurrence of color difference, and is advantageous in the processability of the pattern formation and the development process because the deep curing is advantageous. The purpose is.

상기의 목적을 달성하기 위하여 본 발명은 하기 화학식 1로 로 표시되는 옥심에스테르 플루오렌 유도체 화합물을 광중합 개시제로 사용하는 블랙매트릭스 포토레지스트 조성물을 제공한다.In order to achieve the above object, the present invention provides a black matrix photoresist composition using an oxime ester fluorene derivative compound represented by the following Chemical Formula 1 as a photopolymerization initiator.

[화학식 1][Formula 1]

Figure PCTKR2015012191-appb-I000001
Figure PCTKR2015012191-appb-I000001

상기 화학식 1에서, In Chemical Formula 1,

R1 내지 R3는 각각 독립적으로 수소, 할로겐, (C1-C20)알킬, (C6-C20)아릴, (C1-C20)알콕시, (C6-C20)아릴(C1-C20)알킬, 히드록시(C1-C20)알킬, 히드록시(C1-C20)알콕시(C1-C20)알킬 또는 (C3-C20)사이클로알킬이고;R 1 to R 3 are each independently hydrogen, halogen, (C1-C20) alkyl, (C6-C20) aryl, (C1-C20) alkoxy, (C6-C20) aryl (C1-C20) alkyl, hydroxy ( C1-C20) alkyl, hydroxy (C1-C20) alkoxy (C1-C20) alkyl or (C3-C20) cycloalkyl;

A는 수소, (C1-C20)알킬, (C6-C20)아릴, (C1-C20)알콕시, (C6-C20)아릴(C1-C20)알킬, 히드록시(C1-C20)알킬, 히드록시(C1-C20)알콕시(C1-C20)알킬, (C3-C20)사이클로알킬, 아미노, 니트로, 시아노 또는 히드록시이고;A is hydrogen, (C1-C20) alkyl, (C6-C20) aryl, (C1-C20) alkoxy, (C6-C20) aryl (C1-C20) alkyl, hydroxy (C1-C20) alkyl, hydroxy ( C1-C20) alkoxy (C1-C20) alkyl, (C3-C20) cycloalkyl, amino, nitro, cyano or hydroxy;

n은 0 또는 1이다. n is 0 or 1;

본 발명에 기재된 「알킬」, 「알콕시」 및 그 외 「알킬」부분을 포함하는 치환체는 직쇄 또는 분쇄 형태를 모두 포함하고, 「사이클로알킬」은 단일 고리계 뿐만 아니라 여러 고리계 탄화수소도 포함한다. 본 발명에 기재된 「아릴」은 하나의 수소 제거에 의해서 방향족 탄화수소로부터 유도된 유기 라디칼로, 각 고리에 적절하게는 4 내지 7개, 바람직하게는 5 또는 6개의 고리원자를 포함하는 단일 또는 융합고리계를 포함하며, 다수개의 아릴이 단일결합으로 연결되어 있는 형태까지 포함한다. 「히드록시알킬」은 상기에서 정의된 알킬기에 히드록시기가 결합된 OH-알킬을 의미하며, 「히드록시알콕시알킬」은 상기 히드록시알킬기에 알콕시기가 결합된 히드록시알킬-O-알킬을 의미한다.Substituents including the "alkyl", "alkoxy" and other "alkyl" moieties described in the present invention include all linear or pulverized forms, and "cycloalkyl" includes not only a single ring system but also various ring hydrocarbons. "Aryl" described in the present invention is an organic radical derived from an aromatic hydrocarbon by one hydrogen removal, and is a single or fused ring containing 4 to 7, preferably 5 or 6 ring atoms in each ring as appropriate. It includes a system, including a form in which a plurality of aryl is connected by a single bond. "Hydroxyalkyl" means OH-alkyl in which a hydroxy group is bonded to the alkyl group defined above, and "hydroxyalkoxyalkyl" means hydroxyalkyl- O -alkyl in which an alkoxy group is bonded to the hydroxyalkyl group.

또한, 본 발명에 기재되어 있는 '(C1-C20)알킬'기는 바람직하게는 (C1-C10)알킬이고, 더 바람직하게는 (C1-C6)알킬이다. '(C6-C20)아릴'기는 바람직하게는 (C6-C18)아릴이다. '(C1-C20)알콕시'기는 바람직하게는 (C1-C10)알콕시이고, 더 바람직하게는 (C1-C4)알콕시이다. '(C6-C20)아릴(C1-C20)알킬'기는 바람직하게는 (C6-C18)아릴(C1-C10)알킬이고, 더 바람직하게는 (C6-C18)아릴(C1-C6)알킬이다. '히드록시(C1-C20)알킬'기는 바람직하게는 히드록시(C1-C10)알킬이고, 더 바람직하게는 히드록시(C1-C6)알킬이다. '히드록시(C1-C20)알콕시(C1-C20)알킬'기는 바람직하게는 히드록시(C1-C10)알콕시(C1-C10)알킬이고, 더 바람직하게는 히드록시(C1-C4)알콕시(C1-C6)알킬이다. '(C3-C20)사이클로알킬'기는 바람직하게는 (C3-C10)사이클로알킬이다.In addition, the '(C1-C20) alkyl' group described in the present invention is preferably (C1-C10) alkyl, more preferably (C1-C6) alkyl. The '(C6-C20) aryl' group is preferably (C6-C18) aryl. The '(C1-C20) alkoxy' group is preferably (C1-C10) alkoxy, more preferably (C1-C4) alkoxy. The '(C6-C20) aryl (C1-C20) alkyl' group is preferably (C6-C18) aryl (C1-C10) alkyl, more preferably (C6-C18) aryl (C1-C6) alkyl. The 'hydroxy (C 1 -C 20) alkyl' group is preferably hydroxy (C 1 -C 10) alkyl, more preferably hydroxy (C 1 -C 6) alkyl. The 'hydroxy (C1-C20) alkoxy (C1-C20) alkyl' group is preferably hydroxy (C1-C10) alkoxy (C1-C10) alkyl, more preferably hydroxy (C1-C4) alkoxy (C1) -C6) alkyl. The '(C3-C20) cycloalkyl' group is preferably (C3-C10) cycloalkyl.

보다 구체적으로 상기 R1 내지 R3는 각각 독립적으로 수소, 브로모, 클로로, 아이오도, 메틸, 에틸, n-프로필, i-프로필, n-부틸, i-부틸, t-부틸, n-펜틸, i-펜틸, n-헥실, i-헥실, 페닐, 나프틸, 바이페닐, 터페닐, 안트릴, 인데닐, 페난트릴, 메톡시, 에톡시, n-프로필옥시, i-프로필옥시, n-부톡시, i-부톡시, t-부톡시, 히드록시메틸, 히드록시에틸, 히드록시n-프로필, 히드록시n-부틸, 히드록시i-부틸, 히드록시n-펜틸, 히드록시i-펜틸, 히드록시n-헥실, 히드록시i-헥실, 히드록시메톡시메틸, 히드록시메톡시에틸, 히드록시메톡시프로필, 히드록시메톡시부틸, 히드록시에톡시메틸, 히드록시에톡시에틸, 히드록시에톡시프로필, 히드록시에톡시부틸, 히드록시에톡시펜틸 또는 히드록시에톡시헥실이고;More specifically, R 1 to R 3 are each independently hydrogen, bromo, chloro, iodo, methyl, ethyl, n -propyl, i -propyl, n -butyl, i -butyl, t -butyl, n -pentyl , i -pentyl, n -hexyl, i -hexyl, phenyl, naphthyl, biphenyl, terphenyl, anthryl, indenyl, phenanthryl, methoxy, ethoxy, n -propyloxy, i -propyloxy, n -Butoxy, i -butoxy, t -butoxy, hydroxymethyl, hydroxyethyl, hydroxy n -propyl, hydroxy n -butyl, hydroxy i -butyl, hydroxy n -pentyl, hydroxy i- Pentyl, hydroxy n -hexyl, hydroxy i -hexyl, hydroxymethoxymethyl, hydroxymethoxyethyl, hydroxymethoxypropyl, hydroxymethoxybutyl, hydroxyethoxymethyl, hydroxyethoxyethyl, Hydroxyethoxypropyl, hydroxyethoxybutyl, hydroxyethoxypentyl or hydroxyethoxyhexyl;

A는 수소, 메틸, 에틸, n-프로필, i-프로필, n-부틸, i-부틸, t-부틸, 페닐, 나프틸, 바이페닐, 터페닐 안트릴, 인데닐, 페난트릴, 메톡시, 에톡시, 프로판옥시, 부톡시, 히드록시메틸, 히드록시에틸, 히드록시프로필, 히드록시부틸, 히드록시메톡시메틸, 히드록시메톡시에틸, 히드록시메톡시프로필, 히드록시메톡시부틸, 히드록시에톡시메틸, 히드록시에톡시에틸, 히드록시에톡시프로필, 히드록시에톡시부틸, 아미노, 니트로, 시아노 또는 히드록시일 수 있으며, 이에 한정되지는 않는다.A is hydrogen, methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, t-butyl, phenyl, naphthyl, biphenyl, terphenyl anthryl, indenyl, phenanthryl, methoxy, Ethoxy, propaneoxy, butoxy, hydroxymethyl, hydroxyethyl, hydroxypropyl, hydroxybutyl, hydroxymethoxymethyl, hydroxymethoxyethyl, hydroxymethoxypropyl, hydroxymethoxybutyl, hydroxy Hydroxyethoxymethyl, hydroxyethoxyethyl, hydroxyethoxypropyl, hydroxyethoxybutyl, amino, nitro, cyano or hydroxy, but is not limited thereto.

본 발명에 따른 옥심에스테르 플루오렌 유도체 화합물로는 대표적으로 하기의 화합물을 들 수 있으나, 하기 화합물이 본 발명을 한정하는 것은 아니다.As the oxime ester fluorene derivative compound according to the present invention, the following compounds are representatively mentioned, but the following compounds are not intended to limit the present invention.

Figure PCTKR2015012191-appb-I000002
Figure PCTKR2015012191-appb-I000002

본 발명에서 상기 화학식 1로 표시되는 옥심에스테르 플루오렌 유도체 화합물은 광중합 개시제로서 블랙매트릭스 포토레지스트 조성물에 포함된다.In the present invention, the oxime ester fluorene derivative compound represented by Chemical Formula 1 is included in the black matrix photoresist composition as a photopolymerization initiator.

본 발명의 블랙매트릭스 포토레지스트 조성물은 상기 화학식 1로 표시되는 옥심에스테르 플루오렌 유도체 화합물, 바인더 수지, 에틸렌성 불포화결합을 갖는 중합성 화합물 및 착색제 등을 포함하며, 반사율의 감소 효과와 색차 발생의 저해 현상을 억제하고 아울러 심부 경화가 유리하여 패턴 형성에 유리한 점 등의 박막 물성이 뛰어나다.The black matrix photoresist composition of the present invention includes an oxime ester fluorene derivative compound represented by Chemical Formula 1, a binder resin, a polymerizable compound having an ethylenically unsaturated bond, a colorant, and the like, and a reduction in reflectance and inhibition of color difference generation. It is excellent in thin film properties, such as the point which suppresses a phenomenon and advantageously deep-hardens, and is advantageous for pattern formation.

본 발명의 블랙매트릭스 포토레지스트 조성물에 있어서 바인더 수지로는 아크릴 중합체 또는 측쇄에 아크릴 불포화 결합을 갖는 아크릴 중합체인 아크릴계 수지, 카도계 수지, 실리콘계 수지 또는 이들의 혼합 수지를 사용할 수 있다.In the black matrix photoresist composition of the present invention, an acrylic resin, a cardo resin, a silicone resin, or a mixed resin thereof, which is an acrylic polymer or an acrylic polymer having an acrylic unsaturated bond in the side chain, may be used as the binder resin.

바인더 수지는 패턴 특성 조절과 내열성 및 내화학성 등의 박막 물성을 부여하기 위하여 그 함량을 조절할 수 있다. 예를 들어, 포토레지스트 조성물 100 중량%에 대하여 3 내지 50 중량%를 사용할 수 있다. 상기 바인더 수지의 중량평균 분자량은 2,000 내지 30O,O00이고, 분산도는 1.0 내지 10.0인 것을 사용하는 것이 바람직하며, 중량평균 분자량 4,000 내지 10O,O00인 것을 사용하는 것이 더욱 바람직하다.The binder resin may control its content in order to provide pattern properties, thin film properties such as heat resistance and chemical resistance. For example, 3 to 50 wt% may be used based on 100 wt% of the photoresist composition. The binder resin preferably has a weight average molecular weight of 2,000 to 300,000, and a dispersion degree of 1.0 to 10.0, more preferably a weight average molecular weight of 4,000 to 100,000,00.

상기 아크릴 중합체는 하기 단량체들을 포함하는 단량체들의 공중합체로서, 이러한 단량체의 예로는 메틸(메타)아크릴레이트, 에틸(메타)아크릴레이트, 프로필(메타)아크릴레이트, 부틸(메타)아크릴레이트, 펜틸(메타)아크릴레이트, 헥실(메타)아크릴레이트, 시클로헥실(메타)아크릴 레이트, 헵틸(메타)아크릴레이트, 옥틸(메타)아크릴레이트, 노닐(메타)아크릴 레이트, 데실(메타)아크릴레이트, 라우릴(메타)아크릴레이트, 도데실(메타) 아크릴레이트, 테트라데실(메타)아크릴레이트 및 헥사데실(메타)아크릴레이트, 이소보닐(메타)아크릴레이트, 아다만틸(메타)아크릴레이트, 디시클로펜타닐(메타) 아크릴레이트, 디시클로펜테닐(메타)아크릴레이트, 벤질(메타)아크릴레이트, 2-메톡시에틸(메타)아크릴레이트, 2-에톡시에틸(메타)아크릴레이트, 아크릴산, 메타아크릴산, 이타코닉산, 말레익산, 말레익산무수물, 말레익산모노알킬 에스터, 모노알킬 이타코네이트, 모노알킬 퓨말레이트, 글리시딜아크릴레이트, 글리시딜 메타아크릴레이트, 3,4-에폭시부틸(메타)아크릴레이트, 2,3-에폭시시클로헥실 (메타)아크릴레이트, 3,4-에폭시시클로헥실메틸(메타)아크릴레이트, 3-메틸 옥세탄-3-메틸(메타)아크릴레이트, 3-에틸옥세탄-3-메틸(메타)아크릴레이트, 스틸렌, α-메틸스틸렌, 아세톡시스틸렌, N-메틸말레이미드, N-에틸말레이미드, N-프로필말레이미드, N-부틸말레이미드, N-시클로헥실말레이미드, (메타)아크릴 아미드, N-메틸(메타)아크릴아미드 등을 들 수 있으며, 이들을 각각 단독으로 또는 2종 이상 함께 사용할 수 있다.The acrylic polymer is a copolymer of monomers including the following monomers, and examples of such monomers include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate and pentyl ( Meth) acrylate, hexyl (meth) acrylate, cyclohexyl (meth) acrylate, heptyl (meth) acrylate, octyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, lauryl (Meth) acrylate, dodecyl (meth) acrylate, tetradecyl (meth) acrylate and hexadecyl (meth) acrylate, isobornyl (meth) acrylate, adamantyl (meth) acrylate, dicyclopentanyl (Meth) acrylate, dicyclopentenyl (meth) acrylate, benzyl (meth) acrylate, 2-methoxyethyl (meth) acrylate, 2-ethoxyethyl (meth) acrylate, acrylic acid, Methacrylic acid, itaconic acid, maleic acid, maleic acid anhydride, maleic acid monoalkyl ester, monoalkyl itaconate, monoalkyl fumaleate, glycidyl acrylate, glycidyl methacrylate, 3,4-epoxybutyl (Meth) acrylate, 2,3-epoxycyclohexyl (meth) acrylate, 3,4-epoxycyclohexylmethyl (meth) acrylate, 3-methyl oxetane-3-methyl (meth) acrylate, 3- Ethyl oxetane-3-methyl (meth) acrylate, styrene, α-methylstyrene, acetoxystyrene, N -methylmaleimide, N -ethylmaleimide, N -propylmaleimide, N -butylmaleimide, N − Cyclohexyl maleimide, (meth) acrylamide, N -methyl (meth) acrylamide, etc. are mentioned, These can be used individually or in combination of 2 or more types, respectively.

상기 측쇄에 아크릴 불포화 결합을 갖는 아크릴 중합체는 카르복실산을 함유한 아크릴 공중합체에 에폭시 수지를 부가반응한 공중합체로서 아크릴산, 메타아크릴산, 이타코닉산, 말레익산, 말레익산모노알킬 에스터 등의 카르복실산을 함유한 아크릴 모노머와 메틸(메타)아크릴레이트, 헥실(메타) 아크릴레이트 등의 알킬(메타)아크릴레이트, 시클로헥실(메타)아크릴레이트, 이소보닐(메타)아크릴레이트, 아다만틸(메타)아크릴레이트, 디시클로펜타닐 (메타)아크릴레이트, 디시클로펜테닐(메타)아크릴레이트, 벤질(메타)아크릴 레이트, 2-메톡시에틸(메타)아크릴레이트, 2-에톡시에틸(메타)아크릴레이트, 스틸렌, α-메틸스틸렌, 아세톡시스틸렌, N-메틸말레이미드, N-에틸말레이미드, N-프로필말레이미드, N-부틸말레이미드, N-시클로헥실말레이미드, (메타)아크릴 아미드, N-메틸(메타)아크릴아미드 등의 모노머 2종 이상을 공중합 하여 얻은 카르복실산을 함유한 아크릴 공중합체에 글리시딜아크릴레이트, 글리시딜메타 아크릴레이트, 3,4-에폭시부틸(메타)아크릴레이트, 2,3-에폭시시클로헥실(메타) 아크릴레이트, 3,4-에폭시시클로헥실메틸(메타) 아크릴레이트 등의 에폭시 수지를 40 내지 180 ℃의 온도에서 부가반응하여 얻어진 바인더 수지를 사용할 수 있다.The acrylic polymer having an acrylic unsaturated bond in the side chain is a copolymer obtained by adding an epoxy resin to an acrylic copolymer containing carboxylic acid, such as acrylic acid, methacrylic acid, itaconic acid, maleic acid and maleic acid monoalkyl ester. Acrylic monomer containing an acid, alkyl (meth) acrylates, such as methyl (meth) acrylate and hexyl (meth) acrylate, cyclohexyl (meth) acrylate, isobornyl (meth) acrylate, and adamantyl ( Meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, benzyl (meth) acrylate, 2-methoxyethyl (meth) acrylate, 2-ethoxyethyl (meth) acrylates, styrene, α- methyl styrene, acetoxy-styrene, N - methyl maleimide, N - ethyl maleimide, N - propyl maleimide, N - butyl maleimide, N - cyclohexyl maleimide, ( L) acrylamide, N - methyl (meth) glycidyl acrylate in the copolymer containing a carboxylic acid obtained by copolymerizing monomers of two or more thereof, such as acrylamide, glycidyl acrylate, glycidyl methacrylate, 3,4- Obtained by addition reaction of epoxy resins, such as epoxy butyl (meth) acrylate, 2, 3- epoxy cyclohexyl (meth) acrylate, and 3, 4- epoxy cyclohexyl methyl (meth) acrylate, at the temperature of 40-180 degreeC Binder resin can be used.

상기 측쇄에 아크릴 불포화 결합을 갖는 아크릴 중합체의 또 다른 예로는 에폭시기를 함유한 아크릴 공중합체에 카르복실산을 부가반응한 공중합체로 글리시딜아크릴레이트, 글리시딜 메타아크릴레이트, 3,4-에폭시부틸(메타) 아크릴레이트, 2,3-에폭시시클로헥실(메타)아크릴레이트, 3,4-에폭시시클로헥실 메틸(메타)아크릴레이트 등의 에폭시기를 함유한 아크릴 모노머와 메틸(메타) 아크릴레이트, 헥실(메타)아크릴레이트 등의 알킬(메타)아크릴레이트, 시클로 헥실(메타)아크릴레이트, 이소보닐(메타)아크릴레이트, 아다만틸(메타)아크릴 레이트, 디시클로펜타닐(메타)아크릴레이트, 디시클로펜테닐(메타)아크릴레이트, 벤질(메타)아크릴레이트, 2-메톡시에틸(메타)아크릴레이트, 2-에톡시에틸(메타) 아크릴레이트, 스틸렌, α-메틸스틸렌, 아세톡시스틸렌, N-메틸말레이미드, N-에틸말레이미드, N-프로필말레이미드, N-부틸말레이미드, N-시클로헥실 말레이미드, (메타)아크릴아미드, N-메틸(메타)아크릴아미드 등의 모노머 2종 또는 2종 이상을 공중합 하여 얻은 에폭시기를 함유한 아크릴 공중합체에 아크릴산, 메타아크릴산, 이타코닉산, 말레익산, 말레익산모노알킬 에스터 등의 카르복실산을 함유한 아크릴 모노머와 40 내지 180 ℃의 온도에서 부가 반응하여 얻어진 바인더 수지를 사용할 수 있다.Another example of an acrylic polymer having an acrylic unsaturated bond in the side chain is a copolymer in which a carboxylic acid is added to an acrylic copolymer containing an epoxy group, and glycidyl acrylate, glycidyl methacrylate, 3,4- Acrylic monomer and methyl (meth) acrylate containing epoxy groups, such as epoxy butyl (meth) acrylate, 2, 3- epoxycyclohexyl (meth) acrylate, and 3, 4- epoxycyclohexyl methyl (meth) acrylate, Alkyl (meth) acrylates, such as hexyl (meth) acrylate, cyclohexyl (meth) acrylate, isobonyl (meth) acrylate, adamantyl (meth) acrylate, dicyclopentanyl (meth) acrylate, and dish Clofenthenyl (meth) acrylate, benzyl (meth) acrylate, 2-methoxyethyl (meth) acrylate, 2-ethoxyethyl (meth) acrylate, styrene, α-methylstyrene, acetoxy steel Monomers such as ene, N -methylmaleimide, N -ethylmaleimide, N -propylmaleimide, N -butylmaleimide, N -cyclohexyl maleimide, (meth) acrylamide and N -methyl (meth) acrylamide 40-180 degreeC with the acrylic monomer containing the carboxylic acid, such as acrylic acid, methacrylic acid, itaconic acid, maleic acid, and monoalkyl ester, in the acrylic copolymer containing the epoxy group obtained by copolymerizing 2 or 2 or more types The binder resin obtained by addition reaction at the temperature of can be used.

또한, 본 발명의 일 실시예에 따르면, 상기 바인더 수지로 카도계 수지를 사용할 수 있으며, 상기 카도계 수지는 주쇄 중 플루오렌기를 포함하는 아크릴계 바인더 수지를 일컫는 것으로 특별히 구조적으로 한정하지 않는다.In addition, according to an embodiment of the present invention, a cardo-based resin may be used as the binder resin, and the cardo-based resin refers to an acrylic binder resin including a fluorene group in a main chain, and is not particularly limited in structure.

또한, 상기 실리콘계 수지로는 실록산 수지를 사용할 수 있으며, 보다 구체적으로는 상기 실리콘계 수지는 한국등록특허 제10-1537771호에 개시된 실록산 수지를 사용할 수 있으며, 제조방법 또한 상기 특허에 기재된 방법으로 제조될 수 있다. 상기 실록산 수지는 KOH 적정시 10 ~ 200 mgKOH/g수지 범위의 산가를 가질 수 있다.In addition, siloxane resin may be used as the silicone resin, and more specifically, the siloxane resin disclosed in Korean Patent No. 10-1537771 may be used as the silicone resin, and a manufacturing method may also be prepared by the method described in the patent. Can be. The siloxane resin may have an acid value in the range of 10 to 200 mgKOH / g resin when titrating KOH.

본 발명의 일 실시예에서 사용 가능한 실록산 수지로는 하기 화학식 2로 표시되는 중합단위 및 하기 화학식 3으로 표시되는 중합단위를 포함하는 실록산 수지일 수 있다.The siloxane resin usable in one embodiment of the present invention may be a siloxane resin including a polymerized unit represented by the following Chemical Formula 2 and a polymerized unit represented by the following Chemical Formula 3.

[화학식 2][Formula 2]

X-R4-SiO3 /2 XR 4 -SiO 3/2

상기 화학식 2에서,In Chemical Formula 2,

R4는 탄소수 1 내지 20의 직쇄상 또는 분지상의 알킬렌기, 탄소수 6 내지 20의 아릴렌기, 아릴기로 치환된 전체 탄소수 7 내지 20의 알킬렌기, 알킬기로 치환된 전체 탄소수 7 내지 20의 아릴렌기, 또는 알킬렌기와 아릴렌기가 연결된 전체 탄소수 7 내지 20의 기이고 R 4 is a linear or branched alkylene group having 1 to 20 carbon atoms, an arylene group having 6 to 20 carbon atoms, an alkylene group having 7 to 20 carbon atoms substituted with an aryl group, and an arylene group having 7 to 20 carbon atoms substituted with an alkyl group. Or a group having 7 to 20 carbon atoms, in which an alkylene group and an arylene group are connected.

X는 하이드록시, 카르복실산, 카르복실산 무수물, 카르복실산 무수물 유도체, 이미드, 이미드 유도체, 아마이드, 아마이드 유도체, 아민 또는 머켑토이며,X is hydroxy, carboxylic acid, carboxylic anhydride, carboxylic anhydride derivative, imide, imide derivative, amide, amide derivative, amine or mercanto,

[화학식 3][Formula 3]

R4SiO(4-n)/2 R 4 SiO (4-n) / 2

상기 화학식 3에서,In Chemical Formula 3,

R4는 각각 독립적으로 수소, 탄소수 1 내지 20의 직쇄상, 분지상 또는 환상의 알킬기, 탄소수 6 내지 10의 아릴기, 탄소수 2 내지 10의 불포화 탄화수소기 또는 탄소수 2 내지 10의 아실옥시기이고, 분자내 복수의 R2는 서로 동일하거나 다르며, n은 0 내지 3인 정수이며, n=3인 중합단위는 n이 3이 아닌 다른 중합단위와 병용될 수 있다. Each R 4 is independently hydrogen, a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 10 carbon atoms, an unsaturated hydrocarbon group having 2 to 10 carbon atoms, or an acyloxy group having 2 to 10 carbon atoms, A plurality of R 2 in the molecule is the same or different from each other, n is an integer of 0 to 3, the polymer unit of n = 3 may be used in combination with another polymer unit other than n is 3.

상기 실록산 수지는 화학식 1의 중합단위와 화학식 2의 중합단위를 합한 100몰% 기준으로 화학식 1의 중합단위 5 내지 40몰%와 화학식 2의 중합단위 95 내지 60몰%로 구성될 수 있다.The siloxane resin may be composed of 5 to 40 mol% of the polymerized units of Formula 1 and 95 to 60 mol% of the polymerized units of Formula 2 based on 100 mol% of the polymerized units of Formula 1 and the polymerized units of Formula 2.

상기 실록산 수지의 구체적인 예로 하기 화학식 4 내지 17로 표시되는 제1 중합단위와 하기 열거한 제2 중합단위를 포함하여 구성되는 실록산 수지를 사용할 수 있으나, 이에 한정되지는 않는다.As a specific example of the siloxane resin, a siloxane resin including the first polymer unit represented by the following Chemical Formulas 4 to 17 and the second polymer unit listed below may be used, but is not limited thereto.

[화학식 4][Formula 4]

Figure PCTKR2015012191-appb-I000003
Figure PCTKR2015012191-appb-I000003

[화학식 5][Formula 5]

Figure PCTKR2015012191-appb-I000004
Figure PCTKR2015012191-appb-I000004

[화학식 6][Formula 6]

Figure PCTKR2015012191-appb-I000005
Figure PCTKR2015012191-appb-I000005

[화학식 7][Formula 7]

Figure PCTKR2015012191-appb-I000006
Figure PCTKR2015012191-appb-I000006

[화학식 8][Formula 8]

Figure PCTKR2015012191-appb-I000007
Figure PCTKR2015012191-appb-I000007

[화학식 9][Formula 9]

Figure PCTKR2015012191-appb-I000008
Figure PCTKR2015012191-appb-I000008

[화학식 10][Formula 10]

Figure PCTKR2015012191-appb-I000009
Figure PCTKR2015012191-appb-I000009

[화학식 11][Formula 11]

Figure PCTKR2015012191-appb-I000010
Figure PCTKR2015012191-appb-I000010

[화학식 12][Formula 12]

Figure PCTKR2015012191-appb-I000011
Figure PCTKR2015012191-appb-I000011

[화학식 13][Formula 13]

Figure PCTKR2015012191-appb-I000012
Figure PCTKR2015012191-appb-I000012

[화학식 14][Formula 14]

Figure PCTKR2015012191-appb-I000013
Figure PCTKR2015012191-appb-I000013

[화학식 15][Formula 15]

Figure PCTKR2015012191-appb-I000014
Figure PCTKR2015012191-appb-I000014

[화학식 16][Formula 16]

Figure PCTKR2015012191-appb-I000015
Figure PCTKR2015012191-appb-I000015

[화학식 17][Formula 17]

Figure PCTKR2015012191-appb-I000016
Figure PCTKR2015012191-appb-I000016

(상기 식 각각에서, m과 n은 각각 독립적으로 1 내지 20의 정수일 수 있다.)(In each of the above formula, m and n may be each independently an integer of 1 to 20.)

또한, 상기 제2 중합단위를 형성시키는 단량체로는 테트라알콕시 실란, 트리알콕시 실란, 메틸 트리알콕시 실란, 에틸 트리알콕시 실란, n-프로필 트리알콕시 실란, 이소프로필 트리알콕시 실란, n-부틸 트리알콕시 실란, tert-부틸 트리알콕시 실란, 페닐 트리알콕시 실란, 나프타 트리알콕시 실란, 비닐 트리알콕시 실란, 메타아크릴옥시메틸 트리알콕시 실란, 2-메타아크릴옥시에틸 트리알콕시 실란, 3-메타아크릴옥시프로필 트리알콕시 실란, 3-메타아크릴옥시프로필 메틸디알콕시 실란, 3-메타아크릴옥시프로필 에틸디알콕시 실란, 아크릴옥시메틸 트리알콕시 실란, 2-아크릴옥시에틸 트리알콕시 실란, 3-아크릴옥시프로필 트리알콕시 실란, 3-아크릴옥시프로필 메틸디알콕시 실란, 3-아크릴옥시프로필 에틸디알콕시 실란, 3-글리시딜옥시프로필 트리알콕시 실란, 2-에폭시시클로헥실에틸 트리알콕시 실란, 3-에폭시시클로헥실프로필 트리알콕시 실란, 디메틸 알콕시 실란, 디에틸 디알콕시 실란, 디프로필 디알콕시 실란, 디페닐 디알콕시 실란, 디페닐 실란디올 및 페닐메틸 디알콕시실란 으로 구성되는 그룹으로부터 선택되는 1종 또는 1종 이상을 사용될 수 있다. 여기서 알콕시는 탄소수 1 내지 7의 직쇄상, 분지상 또는 환상의 지방족 또는 방향족 알콕시이고, 가수분해가 가능한 할로겐화합물 일 수 있다.Further, as the monomer forming the second polymer unit, tetraalkoxy silane, trialkoxy silane, methyl trialkoxy silane, ethyl trialkoxy silane, n-propyl trialkoxy silane, isopropyl trialkoxy silane, n-butyl trialkoxy silane , tert-butyl trialkoxy silane, phenyl trialkoxy silane, naphtha trialkoxy silane, vinyl trialkoxy silane, methacryloxymethyl trialkoxy silane, 2-methacryloxyethyl trialkoxy silane, 3-methacryloxypropyl trialkoxy silane , 3-methacryloxypropyl methyl dialkoxy silane, 3-methacryloxypropyl ethyl dialkoxy silane, acryloxymethyl trialkoxy silane, 2-acryloxyethyl trialkoxy silane, 3-acryloxypropyl trialkoxy silane, 3- Acryloxypropyl methyl dialkoxy silane, 3-acryloxypropyl ethyl dialkoxy silane, 3-glycidyloxypropyl trialkoxy Cysilane, 2-epoxycyclohexylethyl trialkoxy silane, 3-epoxycyclohexylpropyl trialkoxy silane, dimethyl alkoxy silane, diethyl dialkoxy silane, dipropyl dialkoxy silane, diphenyl dialkoxy silane, diphenyl silanediol and One or more selected from the group consisting of phenylmethyl dialkoxysilanes can be used. Here, alkoxy is linear, branched or cyclic aliphatic or aromatic alkoxy having 1 to 7 carbon atoms, and may be a halogen compound capable of hydrolysis.

본 발명의 블랙매트릭스 포토레지스트 조성물에 있어서 에틸렌성 불포화결합을 갖는 중합성 화합물은 패턴 형성시 광반응에 의하여 가교되어 패턴을 형성하는 역할을 하며 고온 가열시 가교되어 내화학성 및 내열성을 부여한다. 상기 에틸렌성 불포화결합을 갖는 중합성 화합물은 상기 바인더 수지 100 중량부를 기준으로 1 내지 200 중량부, 바람직하게는 10 내지 150 중량부, 더 바람직하게는 50 내지 120 중량부로 함유할 수 있다. 상기 에틸렌성 불포화결합을 갖는 중합성 화합물의 함량이 이러한 범위를 만족하는 경우, 가교도가 지나치게 높아지는 문제가 방지되어 적절한 패턴의 연성이 유지될 수 있다. In the black matrix photoresist composition of the present invention, the polymerizable compound having an ethylenically unsaturated bond serves to form a pattern by crosslinking by photoreaction at the time of pattern formation and crosslinking at high temperature to impart chemical resistance and heat resistance. The polymerizable compound having an ethylenically unsaturated bond may be contained in an amount of 1 to 200 parts by weight, preferably 10 to 150 parts by weight, more preferably 50 to 120 parts by weight, based on 100 parts by weight of the binder resin. When the content of the polymerizable compound having an ethylenically unsaturated bond satisfies this range, the problem of excessively high degree of crosslinking can be prevented and ductility of an appropriate pattern can be maintained.

상기 에틸렌성 불포화결합을 갖는 중합성 화합물은 구체적으로 메틸(메타)아크릴레이트, 에틸(메타)아크릴레이트, 부틸(메타)아크릴레이트, 2-에틸헥실(메타)아크릴 레이트, 라우릴(메타) 아크릴레이트 등의 (메타)아크릴산의 알킬에스테르, 글리시딜(메타)아크릴레이트, 에틸렌옥사이드기의 수가 2 내지 14인 폴리에틸렌 글리콜모노(메타)아크릴레이트, 에틸렌글리콜디(메타)아크릴레이트, 에틸렌 옥사이드기의 수가 2 내지 14인 폴리에틸렌 글리콜디(메타)아크릴레이트, 프로필렌옥사이드기의 수가 2 내지 14인 프로필렌글리콜디(메타)아크릴레이트, 트리메틸올프로판디(메타) 아크릴레이트, 비스페놀 A 디글리시딜에테르아크릴산 부가물, 디히드록시 에틸(메타)아크릴레이트의 프탈산디에스테르, 디히드록시에틸(메타) 아크릴레이트의 톨루엔 디이소시아네이트 부가물, 트리메틸올프로판트리(메타) 아크릴레이트, 펜타에리스리톨트리(메타) 아크릴레이트, 펜타에리스리톨테트라 (메타)아크릴레이트, 디펜타에리스리톨펜타(메타)아크릴레이트, 디펜타에리스리톨 헥사(메타)아크릴레이트, 디펜타에리스리톨 트리(메타)아크릴레이트와 같이 다가 알콜과 α,디불포화 카르복시산을 에스테르화하여 얻어지는 화합물, 트리메틸올프로판트리글리시딜에테르아크릴산 부가물과 같이 다가 글리시딜 화합물의 아크릴산 부가물 등을 들 수 있으며, 이들을 각각 단독으로 또는 2종 이상 함께 사용할 수 있다. The polymerizable compound having an ethylenically unsaturated bond is specifically methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) acryl Alkyl ester of (meth) acrylic acid, such as the rate, glycidyl (meth) acrylate, polyethyleneglycol mono (meth) acrylate whose number of ethylene oxide groups is 2-14, ethylene glycol di (meth) acrylate, ethylene oxide group Polyethylene glycol di (meth) acrylate having a number of from 2 to 14, propylene glycol di (meth) acrylate having a number of from 2 to 14 of propylene oxide group, trimethylolpropanedi (meth) acrylate, bisphenol A diglycidyl ether Acrylic acid adduct, phthalic acid diester of dihydroxy ethyl (meth) acrylate, toluene diisocy of dihydroxyethyl (meth) acrylate Nate adduct, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylic A compound obtained by esterifying a polyhydric alcohol and α, diunsaturated carboxylic acid, such as a latent, dipentaerythritol tri (meth) acrylate, an acrylic acid adduct of a polyhydric glycidyl compound, such as a trimethylolpropanetriglycidyl ether acrylic acid adduct. These can be mentioned, These can be used individually or in combination of 2 or more types, respectively.

또한, 본 발명의 블랙매트릭스 포토레지스트 조성물에서 광중합 개시제로 포함되는 화학식 1의 옥심에스테르 플루오렌 유도체 화합물의 첨가량은 블랙매트릭스의 반사율을 최소화하고 색차 발생을 억제하고 아울러 심부 경화가 원활하게 이루어지기 위한 함량으로서 에틸렌성 불포화결합을 갖는 중합성 화합물 100 중량부 기준으로 0.01 내지 50 중량부, 바람직하게는 0.02 내지 25 중량부, 0.5 내지 10 중량부일 수 있다. In addition, the amount of the oxime ester fluorene derivative compound of Formula 1 included as a photopolymerization initiator in the black matrix photoresist composition of the present invention is a content for minimizing the reflectance of black matrix, suppressing color difference, and smoothing the deep curing It may be 0.01 to 50 parts by weight, preferably 0.02 to 25 parts by weight, 0.5 to 10 parts by weight based on 100 parts by weight of the polymerizable compound having an ethylenically unsaturated bond.

상기 광중합 개시제 함량이 이러한 범위를 만족하는 경우, 광경화도가 확보되어 노광부와 비노광부의 현상성 차이로 인해 패턴의 형성이 더욱 용이하고, 과도한 상부경화로 인한 T 모양의 패턴이 형성되는 것이 방지되어 원하는 바의 패턴형상을 얻을 수 있다. When the content of the photopolymerization initiator satisfies this range, the degree of photocuring is ensured, thereby making it easier to form a pattern due to the developability difference between the exposed portion and the non-exposed portion, and preventing the formation of a T-shaped pattern due to excessive upper curing. The desired pattern shape can be obtained.

본 발명 포토레지스트 조성물의 일 실시예에 따르면, 상기 화학식 1의 옥심에스테르 플루오렌 유도체 화합물 이외에 추가 광중합 개시제로 티옥산톤계 화합물, 아세토페논계 화합물, 비이미다졸계 화합물, 트리아진계 화합물, 티올계 화합물, 및 화학식 1로 표시되는 화합물 이외의 O-아실옥심계 화합물로 이루어지는 군으로부터 선택되는 1종 또는 2종 이상을 더 포함할 수 있다.According to one embodiment of the photoresist composition of the present invention, a thioxanthone compound, acetophenone compound, biimidazole compound, triazine compound, thiol compound as an additional photopolymerization initiator in addition to the oxime ester fluorene derivative compound of Chemical Formula 1 It may further comprise one or two or more selected from the group consisting of O-acyl oxime compounds other than the compound represented by the formula (1).

상기 티옥산톤계 화합물로서는, 예를 들면, 티옥산톤, 2-클로로티옥산톤, 2-메틸티옥산톤, 2-이소프로필티옥산톤, 4-이소프로필티옥산톤, 2,4-디클로로티옥산톤, 2,4-디메틸티옥산톤, 2,4-디에틸티옥산톤, 2,4-디이소프로필티옥산톤 등을 사용할 수 있다. 상기 아세토페논계 화합물로서는, 예를 들면, 2-메틸-1-[4-(메틸티오)페닐]-2-모르폴리노프로판-1-온, 2-벤질-2-디메틸아미노-1-(4-모르폴리노페닐)부탄-1-온, 2-(4-메틸벤질)-2-(디메틸아미노)-1-(4-모르폴리노페닐)부탄-1-온 등을 사용할 수 있다. 상기 비이미다졸계 화합물로서는, 예를 들면, 2,2'-비스(2-클로로페닐)-4,4',5,5'-테트라페닐-1,2'-비이미다졸, 2,2'-비스(2,4-디클로로로페닐)-4,4',5,5'-테트라페닐-1,2'-비이미다졸, 2,2'-비스(2,4,6-트리클로로페닐)-4,4',5, 5'-테트라페닐-1,2'-비이미다졸 등이 있다. 상기 트리아진계 화합물로서는, 예를 들면, 2,4,6-트리스(트리클로로메틸)-s-트리아진, 2-메틸-4,6-비스(트리클로로메틸)-s-트리아진, 2-[2-(5-메틸푸란-2-일)에테닐]-4,6-비스(트리클로로메틸)-s-트리아진, 2-[2-(푸란-2-일)에테닐]-4,6-비스(트리클로로메틸)-s-트리아진, 2-[2-(4-디에틸아미노-2-메틸페닐)에테닐]-4,6-비스(트리클로로메틸)-s-트리아진, 2-[2-(3,4-디메톡시페닐)에테닐]-4,6-비스(트리클로로메틸)-s-트리아진, 2-(4-메톡시페닐)-4,6-비스(트리클로로메틸)-s-트리아진, 2-(4-에톡시스티릴)-4,6-비스(트리클로로메틸)-s-트리아진, 2-(4-n-부톡시페닐)-4,6-비스(트리클로로메틸)-s-트리아진 등을 사용할 수 있다.As said thioxanthone type compound, for example, thioxanthone, 2-chloro thioxanthone, 2-methyl thioxanthone, 2-isopropyl thioxanthone, 4-isopropyl thioxanthone, 2, 4- dichloro Thioxanthone, 2, 4- dimethyl thioxanthone, 2, 4- diethyl thioxanthone, 2, 4- diisopropyl thioxanthone, etc. can be used. As said acetophenone type compound, 2-methyl-1- [4- (methylthio) phenyl] -2- morpholino propane- 1-one, 2-benzyl-2- dimethylamino-1- ( 4-morpholinophenyl) butan-1-one, 2- (4-methylbenzyl) -2- (dimethylamino) -1- (4-morpholinophenyl) butan-1-one, and the like can be used. As said biimidazole type compound, 2,2'-bis (2-chlorophenyl) -4,4 ', 5,5'- tetraphenyl- 1,2'-biimidazole, 2,2, for example '-Bis (2,4-dichlororophenyl) -4,4', 5,5'-tetraphenyl-1,2'-biimidazole, 2,2'-bis (2,4,6-trichloro Phenyl) -4,4 ', 5,5'-tetraphenyl-1,2'-biimidazole and the like. Examples of the triazine-based compound include 2,4,6-tris (trichloromethyl) -s-triazine, 2-methyl-4,6-bis (trichloromethyl) -s-triazine and 2- [2- (5-methylfuran-2-yl) ethenyl] -4,6-bis (trichloromethyl) -s-triazine, 2- [2- (furan-2-yl) ethenyl] -4 , 6-bis (trichloromethyl) -s-triazine, 2- [2- (4-diethylamino-2-methylphenyl) ethenyl] -4,6-bis (trichloromethyl) -s-triazine , 2- [2- (3,4-dimethoxyphenyl) ethenyl] -4,6-bis (trichloromethyl) -s-triazine, 2- (4-methoxyphenyl) -4,6-bis (Trichloromethyl) -s-triazine, 2- (4-ethoxystyryl) -4,6-bis (trichloromethyl) -s-triazine, 2- (4-n-butoxyphenyl)- 4,6-bis (trichloromethyl) -s-triazine and the like can be used.

상기 O-아실옥심계 화합물로서는, 예를 들면, 1,2-옥탄디온,1-[4-(페닐티오)페닐]-2-(O-벤조일옥심), 에탄온-1-[9-에틸-6-(2-메틸벤조일)-9H-카르바졸-3-일]-1-(O-아세틸옥심), 에탄온-1-[9-에틸-6-(2-메틸-4-테트라하이드로푸라닐메톡시벤조일)-9H-카르바졸-3-일]-1-(O-아세틸옥심), 에탄온-1-[9-에틸-6- X2-메틸-4-(2,2-디메틸-1,3-디옥소라닐)메톡시벤조일 r-9H-카르바졸-3-일]-1-(O-아세틸옥심) 등을 사용할 수 있다.As said O-acyl oxime type compound, 1,2-octanedione, 1- [4- (phenylthio) phenyl] -2- (O-benzoyl oxime), ethanone-1- [9-ethyl, for example] -6- (2-methylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime), ethanone-1- [9-ethyl-6- (2-methyl-4-tetrahydro Furanylmethoxybenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime), ethanone-1- [9-ethyl-6-X2-methyl-4- (2,2-dimethyl- 1,3-dioxoranyl) methoxybenzoyl r-9H-carbazol-3-yl] -1- (O-acetyloxime) and the like can be used.

본 발명의 포토레지스트 조성물에서 광중합 개시제로 사용되는 상기 화학식 1의 옥심에스테르 플루오렌 유도체 화합물 이외의 추가 광중합 개시제는 에틸렌성 불포화결합을 갖는 중합성 화합물 100 중량부에 대하여 0.01 내지 20 중량부, 바람직하게는 0.05 내지 10 중량부를 사용할 수 있다.The additional photopolymerization initiator other than the oxime ester fluorene derivative compound of formula 1 used as the photopolymerization initiator in the photoresist composition of the present invention is 0.01 to 20 parts by weight, preferably 100 parts by weight of the polymerizable compound having an ethylenically unsaturated bond. 0.05 to 10 parts by weight may be used.

또한, 본 발명의 블랙매트릭스 포토레지스트 조성물은 필요에 따라 접착보조제로 에폭시기 또는 아민기를 갖는 실리콘계 화합물을 더 포함할 수 있다. 블랙매트릭스 포토레지스트 조성물에서 실리콘계 화합물은 ITO 전극과 포토레지스트 조성물과의 접착력을 향상시키며, 경화 후 내열 특성을 증대시킬 수 있다. 상기 에폭시기 또는 아민기를 갖는 실리콘계 화합물로는 (3-글리시드옥시프로필)트리메톡시실레인, (3-글리시드옥시프로필)트리에톡시실레인, (3-글리시드옥시프로필)메틸디메톡시 실레인, (3-글리시드옥시프로필)메틸디에톡시실레인, (3-글리시드옥시프로필) 디메틸메톡시실레인, (3-글리시드옥시프로필)디메틸에톡시실레인, 3,4-에폭시 부틸트리메톡시실레인, 3,4-에폭시부틸트리에톡시실레인, 2-(3,4-에폭시시클로 헥실)에틸트리메톡시실레인, 2-(3,4-에폭시시클로헥실)에틸트리에톡시실레인 및 아미노프로필트리메톡시 실레인 등이 있으며, 이들을 각각 단독으로 또는 2종 이상 혼합하여 사용할 수 있다. 상기 에폭시기 또는 아민기를 갖는 실리콘계 화합물의 함량은 바인더 수지 100 중량부에 대하여 0.0001 내지 20 중량부일 수 있다.In addition, the black matrix photoresist composition of the present invention may further include a silicone-based compound having an epoxy group or an amine group as an adhesion aid as necessary. In the black matrix photoresist composition, the silicone-based compound may improve adhesion between the ITO electrode and the photoresist composition and may increase heat resistance after curing. Examples of the silicone compound having an epoxy group or an amine group include (3-glycidoxy propyl) trimethoxysilane, (3-glycidoxy propyl) triethoxysilane, and (3-glycidoxy propyl) methyldimethoxy silane. Phosphorus, (3-glycidoxypropyl) methyldiethoxysilane, (3-glycidoxypropyl) dimethylmethoxysilane, (3-glycidoxypropyl) dimethylethoxysilane, 3,4-epoxy butyl Trimethoxysilane, 3,4-epoxybutyltriethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrie Methoxysilane, aminopropyltrimethoxy silane, and the like, and these may be used alone or in combination of two or more thereof. The content of the silicon compound having the epoxy group or the amine group may be 0.0001 to 20 parts by weight based on 100 parts by weight of the binder resin.

또한, 본 발명의 블랙매트릭스 포토레지스트 조성물은 필요에 따라 광증감제, 열중합 금지제, 소포제, 레벨링제 등의 상용성이 있는 첨가제를 더 포함할 수 있다.In addition, the black matrix photoresist composition of the present invention may further include a compatible additive such as a photosensitizer, a thermal polymerization inhibitor, an antifoaming agent, a leveling agent and the like as necessary.

또한, 본 발명의 착색제로는 바람직하게는 차광성을 발현하는 카본블랙, 티탄블랙, 아세킬렌블랙, 아닐린블랙, 퍼릴렌블랙, 티탄산스트론튬, 산화크롬 및 세리아 중에서 선택되는 적어도 1종을 사용할 수 있다. 상기 착색제의 함량은 바인더 수지 100 중량부 기준으로 1 내지 300 중량부, 바람직하게는 3 내지 200 중량부, 더 바람직하게는 5 내지 150 중량부일 수 있다.In addition, as the colorant of the present invention, at least one selected from carbon black, titanium black, acekylene black, aniline black, perylene black, strontium titanate, chromium oxide, and ceria, which preferably exhibits light blocking properties, may be used. . The content of the colorant may be 1 to 300 parts by weight, preferably 3 to 200 parts by weight, more preferably 5 to 150 parts by weight based on 100 parts by weight of the binder resin.

상기 착색제의 함량이 이러한 범위를 만족하는 경우, 차광의 효과가 개선되고, 더불어, 패턴형성을 위한 공정특성 및 전기적 특성도 향상될 수 있다.When the content of the colorant satisfies this range, the effect of light shielding may be improved, and in addition, process characteristics and electrical characteristics for pattern formation may be improved.

본 발명의 일 실시예에 따른 블랙매트릭스 포토레지스트 조성물은 용매를 가하여 기판 위에 스핀 코팅한 후 마스크를 이용하여 자외선을 조사하여 알칼리 현상액으로 현상하는 방법을 통하여 패턴을 형성할 수 있다. 상기 용매의 함량은 바인더 수지 100 중량부 기준으로 10 내지 3,000 중량부, 바람직하게는 20 내지 1,000 중량부, 더 바람직하게는 30 내지 500 중량부일 수 있다. The black matrix photoresist composition according to the exemplary embodiment of the present invention may form a pattern through spin coating on a substrate by adding a solvent and then irradiating ultraviolet rays using a mask to develop the alkaline developer. The content of the solvent may be 10 to 3,000 parts by weight, preferably 20 to 1,000 parts by weight, more preferably 30 to 500 parts by weight, based on 100 parts by weight of the binder resin.

상기 용매로는 바인더 수지, 광중합 개시제 및 기타 화합물과의 상용성을 고려하여 에틸아세테이트, 부틸아세테이트, 디에틸렌글리콜디메틸에테르, 디에틸렌글리콜 디메틸에틸에테르, 메틸메톡시프로피오네이트, 에틸에톡시프로피오네이트(EEP), 에틸락테이트, 프로필렌글리콜모노메틸에테르아세테이트(PGMEA), 프로필렌글리콜 메틸에테르프로피오네이트(PGMEP), 프로필렌글리콜메틸에테르, 프로필렌글리콜 프로필에테르, 메틸셀로솔브아세테이트, 에틸셀로솔브아세테이트, 디에틸렌 글리콜메틸아세테이트, 디에틸렌글리콜에틸아세테이트, 아세톤, 메틸이소부틸 케톤, 시클로헥사논, 디메틸포름아미드(DMF), N,N-디메틸아세트아미드(DMAc), N-메틸-2-피롤리돈(NMP), γ-부틸로락톤, 디에틸에테르, 에틸렌글리콜 디메틸 에테르, 다이글라임(Diglyme), 테트라하이드로퓨란(THF), 메탄올, 에탄올, 프로판올, 이소-프로판올, 메틸셀로솔브, 에틸셀로솔브, 디에틸렌글리콜메틸 에테르, 디에틸렌글리콜에틸에테르, 디프로필렌글리콜메틸에테르, 톨루엔, 크실렌, 헥산, 헵탄, 옥탄 등의 용매를 각각 단독으로 또는 2종 이상 혼합하여 사용할 수 있다.The solvent may be ethyl acetate, butyl acetate, diethylene glycol dimethyl ether, diethylene glycol dimethyl ethyl ether, methyl methoxy propionate, ethyl ethoxy propion, in consideration of compatibility with binder resins, photopolymerization initiators and other compounds. Nate (EEP), ethyl lactate, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol methyl ether propionate (PGMEP), propylene glycol methyl ether, propylene glycol propyl ether, methyl cellosolve acetate, ethyl cellosolve Acetate, diethylene glycol methyl acetate, diethylene glycol ethyl acetate, acetone, methyl isobutyl ketone, cyclohexanone, dimethylformamide (DMF), N , N -dimethylacetamide (DMAc), N -methyl-2-pi Ralidone (NMP), γ-butylolactone, diethyl ether, ethylene glycol dimethyl ether, diglyme, tetraha Drawfuran (THF), methanol, ethanol, propanol, iso-propanol, methyl cellosolve, ethyl cellosolve, diethylene glycol methyl ether, diethylene glycol ethyl ether, dipropylene glycol methyl ether, toluene, xylene, hexane, Solvents, such as heptane and an octane, can be used individually or in mixture of 2 or more types, respectively.

또한, 본 발명의 블랙 매트릭스 형성용 레지스트로 적용하기 위해 포함되는 색재로는 카본블랙, 티탄 블랙, 아닐린 블랙 및 C.I.피그먼트 블랙 7 등을 들 수 있다.In addition, examples of the colorant included for application to the black matrix forming resist of the present invention include carbon black, titanium black, aniline black, and C.I. pigment black 7.

본 발명은 블랙매트릭스 포토레지스트 조성물은 옥심에스테르 플루오렌 유도체 화합물을 광중합 개시제로 사용함으로써 블랙매트릭스 박막의 반사율의 감소 효과와 색차 발생의 저해 현상을 억제하고 아울러 심부 경화가 유리하여 패턴 형성에 유리한 점 등을 지니는 박막 제조 시 유용하게 사용할 수 있는 장점이 있다. In the present invention, the black matrix photoresist composition is used as an photopolymerization initiator with an oxime ester fluorene derivative compound to suppress the effect of reducing the reflectance of the black matrix thin film and inhibiting the occurrence of color difference, and advantageously, deep curing is advantageous for the formation of a pattern. There is an advantage that can be usefully used in the manufacture of a thin film.

이하에서, 본 발명의 상세한 이해를 위하여 본 발명의 대표 화합물을 실시예 및 비교 예를 들어 상세하게 설명하겠는 바, 본 발명에 따른 실시예들은 여러 가지 다른 형태로 변형될 수 있으며, 본 발명의 범위가 아래에서 상술하는 실시예들에 한정되는 것으로 해석되서는 안 된다. 본 발명의 실시예들은 당업계에서 평균적인 지식을 가진 자에게 본 발명을 보다 완전하게 설명하기 위해서 제공되는 것이다.Hereinafter, the exemplary compounds of the present invention will be described in detail with reference to Examples and Comparative Examples for a detailed understanding of the present invention. Examples according to the present invention may be modified in various forms, and the scope of the present invention. Should not be construed as limited to the embodiments described below. The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art.

<바인더 수지의 제조> < Production of Binder Resin>

1) 바인더 수지 1의 제조1) Preparation of Binder Resin 1

500 mL 중합용기에 프로필렌글리콜메틸에테르아세테이트 (Propylene Glycol Methyl Ether Acetate ; PGMEA) 200 mL과 AIBN 1.5 g을 첨가한 후, 메타아크릴산, 글리시딜메타아크릴산, 메틸메타아크릴산 및 디시클로펜타닐아크릴산을 각각 20:20:40:20의 몰비로 아크릴 모노머의 고형분을 40 중량%로 첨가한 다음, 질소 분위기 하에서 70 ℃에서 5시간 동안 교반하며 중합시켜 아크릴 중합체인 바인더 수지 1을 제조하였다. 이와 같이 제조된 공중합체의 평균 분자량은 25,000, 분산도는 1.9로 확인되었다.After adding 200 mL of Propylene Glycol Methyl Ether Acetate (PGMEA) and 1.5 g of AIBN to a 500 mL polymerization vessel, 20 parts of methacrylic acid, glycidylmethacrylic acid, methylmethacrylic acid and dicyclopentanylacrylic acid were added. Solid content of the acrylic monomer was added at 40% by weight in a molar ratio of: 20: 40: 20, and then polymerized with stirring at 70 ° C. for 5 hours under a nitrogen atmosphere to prepare binder resin 1 as an acrylic polymer. The copolymer thus produced had an average molecular weight of 25,000 and a dispersion of 1.9.

2) 바인더 수지 2의 제조 2) Preparation of Binder Resin 2

500 mL 중합용기에 프로필렌글리콜메틸에테르아세테이트 200 mL과 AIBN 1.0 g을 첨가한 후, 메타아크릴산, 스틸렌, 메틸메타아크릴산 및 시클로헥실 메타아크릴산을 각각 40:20:20:20의 몰비로 아크릴 모노머의 고형분을 40 중량 %로 첨가한 다음, 질소 분위기 하에서 70 ℃에서 5시간 동안 교반하며 중합시켜 공중합체를 합성하였다. 이 반응기에 N,N-디메틸아닐린 0.3 g과 글리시딜메타아크릴산 20 몰비를 첨가한 후 100 ℃에서 10시간 동안 교반하여 측쇄에 아크릴 불포화 결합을 갖는 아크릴 중합체인 바인더 수지 2를 제조하였다. 이와 같이 제조된 공중합체의 평균 분자량은 2O,O00, 분산도는 2.0로 확인되었다.After adding 200 mL of propylene glycol methyl ether acetate and 1.0 g of AIBN to a 500 mL polymerization vessel, methacrylic acid, styrene, methylmethacrylic acid, and cyclohexyl methacrylic acid were added in a molar ratio of 40: 20: 20: 20, respectively. Was added to 40% by weight, and then polymerized by stirring with stirring at 70 ° C. for 5 hours under a nitrogen atmosphere. 0.3 g of N, N -dimethylaniline and 20 molar ratios of glycidylmethacrylic acid were added to the reactor, followed by stirring at 100 ° C. for 10 hours to prepare a binder resin 2 which is an acrylic polymer having an acrylic unsaturated bond in the side chain. The average molecular weight of the copolymer prepared as described above was confirmed to be 20, 000 and dispersion degree of 2.0.

3) 바인더 수지 3의 제조3) Preparation of Binder Resin 3

500 mL 중합용기에 프로필렌글리콜메틸에테르아세테이트 200 mL과 AIBN 1.0 g을 첨가한 후, 글리시딜메타아크릴산, 스틸렌, 메틸메타 아크릴산 및 시클로헥실메타아크릴산을 각각 40:20:20:20의 몰비로 아크릴 모노머의 고형분을 40 중량%로 첨가한 다음, 질소 분위기 하에서 70 ℃에서 5시간 동안 교반하며 중합시켜 공중합체를 합성하였다. 이 반응기에 N,N-디메틸아닐린 0.3 g과 전체 단량체의 고형분 100몰에 대하여 아크릴산 20 몰비를 첨가한 후 100 ℃에서 10시간 동안 교반하여 측쇄에 아크릴 불포화 결합을 갖는 아크릴 중합체인 바인더 수지 3을 제조하였다. 이와 같이 제조된 공중합체의 평균 분자량은 18,000, 분산도는 1.8로 확인되었다.After 200 mL of propylene glycol methyl ether acetate and 1.0 g of AIBN were added to a 500 mL polymerization vessel, glycidylmethacrylic acid, styrene, methylmethacrylic acid and cyclohexylmethacrylic acid were each acrylic in a molar ratio of 40: 20: 20: 20. A solid content of the monomer was added at 40% by weight, and then polymerized by stirring with stirring at 70 ° C. for 5 hours under a nitrogen atmosphere. To this reactor, 0.3 g of N, N -dimethylaniline and 20 molar ratios of acrylic acid were added to 100 moles of solids of the entire monomer, followed by stirring at 100 ° C. for 10 hours to prepare binder resin 3, an acrylic polymer having an acrylic unsaturated bond in the side chain. It was. The average molecular weight of the copolymer prepared as described above was 18,000, and the degree of dispersion was found to be 1.8.

4) 바인더 수지 4의 제조4) Preparation of Binder Resin 4

500 mL 중합용기에 메틸 3-(트리에톡시실릴)프로피오네이트(methyl 3-(triethoxysilyl)propionate) 62.5g(0.05 mole), 바이시클로 헵타닐 트리에톡시 실란 51.6g(0.04 mole), 메틸 트리메톡시 실란 6.8g(0.01 mole), 프로필렌 글리콜 모노메틸 에테르 아세테이트 200 g을 정량하고, 상기 용액을 교반하며, 35%염산 수용액 10.4g(0.02 mole)과 물 47.2g, 테트라하이드로퓨란 50g 혼합액을 적하한다. 적하 종료 후, 반응온도를 85 ℃로 승온하고, 승온된 온도에서 6시간 반응을 진행한다. 반응 종료 후, 테트라하이트로퓨란과 메탄올을 적정량 증발 제거하고, 에테르, 물을 첨가하여 추출한 뒤 유기상을 회수하고, 잔류알콜 및 용매를 증발 제거하여 실록산 수지 54g을 얻었다. 얻어진 실록산 수지를 프로필렌 글리콜 모노메틸 에테르 아세테이트 125.5g에 용해시킨다. 얻은 실록산 수지의 중량평균분자량은 6,000 이었다..62.5 g (0.05 mole) of methyl 3- (triethoxysilyl) propionate in 500 mL polymerization vessel, 51.6 g (0.04 mole) of bicyclo heptanyl triethoxy silane, methyl tri (triethoxysilyl) propionate 6.8 g (0.01 mole) of methoxy silane and 200 g of propylene glycol monomethyl ether acetate were quantified, the solution was stirred, and 10.4 g (0.02 mole) of 35% hydrochloric acid solution, 47.2 g of water, and 50 g of tetrahydrofuran were added dropwise thereto. do. After completion of the dropwise addition, the reaction temperature was raised to 85 ° C., and the reaction proceeded at the elevated temperature for 6 hours. After the completion of the reaction, tetrahydrotrofuran and methanol were evaporated off in an appropriate amount, extracted with ether and water, and the organic phase was recovered. The remaining alcohol and solvent were evaporated to remove 54g of siloxane resin. The obtained siloxane resin is dissolved in 125.5 g of propylene glycol monomethyl ether acetate. The weight average molecular weight of the obtained siloxane resin was 6,000.

5) 바인더 수지 55) Binder Resin 5

카도계 바인더 수지는 CAP-01(제조사:미원)을 사용하였다.Cardo-based binder resin used CAP-01 (manufacturer: Miwon).

실시예Example 1 내지 17: 블랙매트릭스  1 to 17: black matrix 포토레지스트Photoresist 조성물의 제조 Preparation of the composition

자외선 차단막과 교반기가 설치되어 있는 반응 혼합조에 하기 표 1에 기재된 성분과 함량에 따라 바인더 수지 1 내지 5를 20 중량%, 디펜타에리스리톨헥사아크릴레이트 10 중량%, 광중합 개시제로서 화합물 1, 2, 3, 4를 0.5 중량%, 고형분 25 중량%로 PGMEA에 분산된 카본블랙 50 중량% 및 레벨링제로 FC-430(3M사), 0.1중량%)을 순차적으로 첨가하고 상온에서 교반한 다음, 용매로 PGMEA를 조성물이 총 100 중량%가 되도록 가하여 블랙매트릭스 포토레지스트 조성물을 제조하였다.20 wt% of binder resins 1 to 5, 10 wt% of dipentaerythritol hexaacrylate, and compounds 1, 2, and 3 as photopolymerization initiators according to the components and contents shown in Table 1 in the reaction mixing tank equipped with the ultraviolet shielding film and the stirrer. 50% by weight of carbon black dispersed in PGMEA at 0.5% by weight, 25% by weight of solids and FC-430 (3M), 0.1% by weight) as a leveling agent were added sequentially and stirred at room temperature, followed by PGMEA as a solvent. Was added to a total of 100% by weight to prepare a black matrix photoresist composition.

[화합물 1][Compound 1]

Figure PCTKR2015012191-appb-I000017
Figure PCTKR2015012191-appb-I000017

[화합물 2][Compound 2]

Figure PCTKR2015012191-appb-I000018
Figure PCTKR2015012191-appb-I000018

[화합물 3][Compound 3]

Figure PCTKR2015012191-appb-I000019
Figure PCTKR2015012191-appb-I000019

[화합물 4][Compound 4]

Figure PCTKR2015012191-appb-I000020
Figure PCTKR2015012191-appb-I000020

실시예Example 18 내지 20: 용해도 평가용  18 to 20: for solubility evaluation 포토레지스트Photoresist 조성물의 제조 Preparation of the composition

광중합 개시제로서 화합물 1의 함량을 1.0, 2.0, 3.0 중량% 첨가하고, 용해도 확인을 위해 카본블랙은 첨가하지 않은 상태로 다른 성분 및 교반 방법은 실시예 2 와 동일한 포토레지스트 조성물을 제조하였다.As the photopolymerization initiator, the content of Compound 1 was added 1.0, 2.0, 3.0% by weight, and the carbon black was not added to check the solubility, and the other components and the stirring method were prepared in the same photoresist composition as in Example 2.

실시예Example 바인더 수지(20 중량%)Binder Resin (20 wt%) 중합성 화합물(10 중량%)Polymerizable Compound (10 wt%) 광중합 개시제(중량%)Photopolymerization Initiator (wt%) 1One 바인더 1Binder 1 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 1(0.5)Compound 1 (0.5) 22 바인더 1Binder 1 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 2(0.5)Compound 2 (0.5) 33 바인더 1Binder 1 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 3(0.5)Compound 3 (0.5) 44 바인더 1Binder 1 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 4(0.5)Compound 4 (0.5) 55 바인더 2Binder 2 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 1(0.5)Compound 1 (0.5) 66 바인더 2Binder 2 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 2(0.5)Compound 2 (0.5) 77 바인더 2Binder 2 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 3(0.5)Compound 3 (0.5) 88 바인더 2Binder 2 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 4(0.5)Compound 4 (0.5) 99 바인더 3Binder 3 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 1(0.5)Compound 1 (0.5) 1010 바인더 3Binder 3 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 2(0.5)Compound 2 (0.5) 1111 바인더 3Binder 3 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 3(0.5)Compound 3 (0.5) 1212 바인더 3Binder 3 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 4(0.5)Compound 4 (0.5) 1313 바인더 4Binder 4 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 1(0.5)Compound 1 (0.5) 1414 바인더 4Binder 4 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 2(0.5)Compound 2 (0.5) 1515 바인더 4Binder 4 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 3(0.5)Compound 3 (0.5) 1616 바인더 4Binder 4 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 4(0.5)Compound 4 (0.5) 1717 바인더 5Binder 5 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 2(0.5)Compound 2 (0.5) 1818 바인더 1Binder 1 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 1(1.0)Compound 1 (1.0) 1919 바인더 1Binder 1 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 2(2.0)Compound 2 (2.0) 2020 바인더 1Binder 1 디펜타에리스리톨헥사아크릴레이트Dipentaerythritol hexaacrylate 화합물 3(3.0)Compound 3 (3.0)

비교예Comparative example 1 내지 3: 블랙매트릭스  1 to 3: Black Matrix 포토레지스트Photoresist 조성물의 제조 Preparation of the composition

광중합 개시제로 각각 하기 화합물 5, 6, 및 7을 각각 사용한 것을 제외하고는 상기 실시예 2와 동일한 방법으로 비교예 1 내지 3의 블랙매트릭스 포토레지스트 조성물을 제조하였다.Black matrix photoresist compositions of Comparative Examples 1 to 3 were prepared in the same manner as in Example 2, except that the following Compounds 5, 6, and 7 were used as photopolymerization initiators, respectively.

[화합물 5] [Compound 5]

Figure PCTKR2015012191-appb-I000021
Figure PCTKR2015012191-appb-I000021

[화합물 6][Compound 6]

Figure PCTKR2015012191-appb-I000022
Figure PCTKR2015012191-appb-I000022

[화합물 7]      [Compound 7]

Figure PCTKR2015012191-appb-I000023
Figure PCTKR2015012191-appb-I000023

비교예Comparative example 4 내지 6: 용해도 평가용  4 to 6: Solubility evaluation 포토레지스트Photoresist 조성물의 제조 Preparation of the composition

광중합 개시제로 상기 화합물 6을 각각 1.0 중량%, 2.0 중량%, 3.0 중량% 사용하고 용해도 확인을 위해 카본블랙은 첨가하지 않은 상태로 다른 성분 및 교반 방법은 상기 실시예 2와 동일한 방법으로 포토레지스트 조성물을 제조하였다.The photoresist composition was prepared in the same manner as in Example 2, with other components and stirring methods using 1.0 wt%, 2.0 wt%, and 3.0 wt% of the compound 6 as the photopolymerization initiator and no carbon black added for solubility. Was prepared.

[물성 평가] [Property evaluation]

상기 실시예 1 내지 17 및 비교예 1 내지 3의 블랙매트릭스 포토레지스트 조성물의 평가는 유리 기판 위에서 실시하였으며, 포토레지스트 조성물의 감도, 패턴 특성, 면저항 등의 성능을 측정하여 그 평가 결과를 하기 표 2 에 나타냈다.Evaluation of the black matrix photoresist compositions of Examples 1 to 17 and Comparative Examples 1 to 3 was carried out on a glass substrate, and the results of evaluation of the sensitivity, pattern characteristics, sheet resistance, etc. of the photoresist composition were measured. Indicated.

1) 감도1) Sensitivity

유리 기판 위에 포토레지스트를 스핀 코팅하여 100 ℃에서 90초 동안 전열처리 후 약 1.9㎛두께의 도막을 형성하였다. 포토마스크를 이용하여 노광 갭을 150㎛하여 고압 수은 램프로 20 mJ/cm2부터 10 mJ/cm2 씩 증가시켜가면서 형성되는 패턴의 C.D.(Critical demension) 를 측정하였다. 노광한 후 0.04% KOH 수용액에서 현상하였다. 그 후에 순수로 세정하고 건조시켜 230 ℃의 컨벡션 오븐에서 30분간 포스트베이크(postbake)를 하여 블랙매트릭스 패턴을 형성하였다. 감도는 패턴의 C.D.(Critical demension) 의 크기가 포화되는 노광량을 각 샘플의 감도로 표시 하였다. The photoresist was spin-coated on the glass substrate to form a coating film having a thickness of about 1.9 μm after the heat treatment at 100 ° C. for 90 seconds. The exposure gap was 150 μm using a photomask to measure CD (critical demension) of a pattern formed by increasing the pressure from 20 mJ / cm 2 to 10 mJ / cm 2 with a high pressure mercury lamp. After exposure it was developed in 0.04% KOH aqueous solution. Thereafter, the mixture was washed with pure water, dried, and post-baked in a convection oven at 230 ° C. for 30 minutes to form a black matrix pattern. The sensitivity was expressed by the sensitivity of each sample as the exposure amount at which the size of the CD (Critical demension) of the pattern was saturated.

2) 표면경화도2) Surface Hardness

상기 감도 평가에서 결정된 노광량에서 노광, 현상 후, 블랙매트릭스 표면에 발생한 핀홀의 개수가 10mm X 10mm 내에 0~3개 미만은 ○, 3~7개 미만은 △, 7개 이상은 X로 판정하였다. After exposure and development at the exposure dose determined in the above sensitivity evaluation, the number of pinholes generated on the surface of the black matrix was determined to be less than 0 to 3, less than 3 to 7 in 10 mm X 10 mm, and more than 7 to be X.

3) 현상공정 특성3) Development process characteristics

상기 감도 평가에서 결정된 노광량에서 노광 후, 현상을 실시하여 비노광부의 현상시간을 BT, 노광부 패턴 10μm의 peeling시간을 BP로 하여 현상공정 범위 (BP-BT)를 판정하였다. After the exposure at the exposure dose determined in the above sensitivity evaluation, development was carried out to determine the development process range (BP-BT) with the developing time of the non-exposed part as BT and the peeling time of the exposed part pattern 10 µm as BP.

4) 반사율4) reflectance

블랙매트릭스 조성물을 기판 위에 스핀 코터를 이용하여 도포한 후, 프리 베이크(prebake), 노광 및 포스트 베이크(postbake) 등의 공정을 거쳐 형성된 블랙매트릭스의 반사율을 측정하였다. After the black matrix composition was applied onto the substrate using a spin coater, the reflectance of the black matrix formed through a process such as prebake, exposure, and postbake was measured.

5) 용해도5) Solubility

상기 실시예 18 내지 20 및 비교예 4 내지 6에서 제조한 용해도 조성물의 평가는 조성물을 투명한 유리 용기에서 배합 후, 상온조건에서 48 시간 방치 후 조성물의 혼탁 정도에 따라 용해성 우수는 ◎, 용해성 양호는 ○, 용해성 불량은 X로 용해도 판정을 하였고 그 결과를 하기 표 2에 나타내었다. 여기에서 혼탁은 광중합 개시제 함량이 과량으로 함유되어 있을 경우 용해도 저하로 인하여 석출물이 발생하기 때문에 나타나는 현상으로 볼 수 있다.Evaluation of the solubility composition prepared in Examples 18 to 20 and Comparative Examples 4 to 6, after blending the composition in a transparent glass container, and left for 48 hours at room temperature conditions excellent solubility according to the degree of turbidity of the composition, good solubility ○, the poor solubility was determined by X solubility and the results are shown in Table 2 below. Here, turbidity can be regarded as a phenomenon that occurs because precipitates occur due to a decrease in solubility when the photopolymerization initiator content is contained in an excessive amount.

실시예Example 감도Sensitivity 표면경화도Surface Hardness 현상공정범위(초)Developing Process Range (sec) 반사율(%)reflectivity(%) 용해도Solubility 1One 6060 8080 6.56.5 -- 22 8080 6060 6.76.7 -- 33 9090 4040 6.56.5 -- 44 120120 3030 6.76.7 -- 55 4040 110110 6.46.4 -- 66 6060 7070 6.46.4 -- 77 6060 7070 6.56.5 -- 88 8080 5050 6.36.3 -- 99 4040 110110 6.46.4 -- 1010 6060 7070 6.36.3 -- 1111 6060 7070 6.46.4 -- 1212 8080 5050 6.56.5 -- 1313 6060 100100 5.85.8 -- 1414 8080 8080 5.95.9 -- 1515 9090 8080 6.16.1 -- 1616 120120 6060 6.06.0 -- 1717 6060 100100 5.95.9 -- 1818 < 40<40 100100 -- 1919 < 40<40 120120 -- 2020 < 40<40 120120 -- 비교예 1Comparative Example 1 150150 XX 1010 7.47.4 -- 비교예 2Comparative Example 2 7070 7070 7.87.8 -- 비교예 3Comparative Example 3 8080 7070 7.27.2 -- 비교예 4Comparative Example 4 < 40<40 8080 -- 비교예 5Comparative Example 5 < 40<40 9090 -- XX 비교예 6Comparative Example 6 < 40<40 100100 -- XX

Claims (7)

하기 화학식 1로 표시되는 옥심에스테르 플루오렌 유도체 화합물을 광중합 개시제로 포함하는 블랙매트릭스 포토레지스트 조성물: A black matrix photoresist composition comprising an oxime ester fluorene derivative compound represented by Formula 1 as a photopolymerization initiator: [화학식 1][Formula 1]
Figure PCTKR2015012191-appb-I000024
Figure PCTKR2015012191-appb-I000024
상기 화학식 1에서, In Chemical Formula 1, R1 내지 R3는 각각 독립적으로 수소, 할로겐, (C1-C20)알킬, (C6-C20)아릴, (C1-C20)알콕시, (C6-C20)아릴(C1-C20)알킬, 히드록시(C1-C20)알킬, 히드록시(C1-C20)알콕시(C1-C20)알킬 또는 (C3-C20)사이클로알킬이고;R 1 to R 3 are each independently hydrogen, halogen, (C1-C20) alkyl, (C6-C20) aryl, (C1-C20) alkoxy, (C6-C20) aryl (C1-C20) alkyl, hydroxy ( C1-C20) alkyl, hydroxy (C1-C20) alkoxy (C1-C20) alkyl or (C3-C20) cycloalkyl; A는 수소, (C1-C20)알킬, (C6-C20)아릴, (C1-C20)알콕시, (C6-C20)아릴(C1-C20)알킬, 히드록시(C1-C20)알킬, 히드록시(C1-C20)알콕시(C1-C20)알킬, (C3-C20)사이클로알킬, 아미노, 니트로, 시아노 또는 히드록시이고;A is hydrogen, (C1-C20) alkyl, (C6-C20) aryl, (C1-C20) alkoxy, (C6-C20) aryl (C1-C20) alkyl, hydroxy (C1-C20) alkyl, hydroxy ( C1-C20) alkoxy (C1-C20) alkyl, (C3-C20) cycloalkyl, amino, nitro, cyano or hydroxy; n은 0 또는 1이다. n is 0 or 1;
제1항에 있어서,The method of claim 1, 상기 R1 내지 R3는 각각 독립적으로 브로모, 클로로, 아이오도, 메틸, 에틸, n-프로필, i-프로필, n-부틸, i-부틸, t-부틸, n-펜틸, i-펜틸, n-헥실, i-헥실, 페닐, 나프틸, 바이페닐, 터페닐, 안트릴, 인데닐, 페난트릴, 메톡시, 에톡시, n-프로필옥시, i-프로필옥시, n-부톡시, i-부톡시, t-부톡시, 히드록시메틸, 히드록시에틸, 히드록시n-프로필, 히드록시n-부틸, 히드록시i-부틸, 히드록시n-펜틸, 히드록시i-펜틸, 히드록시n-헥실, 히드록시i-헥실, 히드록시메톡시메틸, 히드록시메톡시에틸, 히드록시메톡시프로필, 히드록시메톡시부틸, 히드록시에톡시메틸, 히드록시에톡시에틸, 히드록시에톡시프로필, 히드록시에톡시부틸, 히드록시에톡시펜틸 또는 히드록시에톡시헥실인 것을 특징으로 하는 블랙매트릭스 포토레지스트 조성물.R 1 to R 3 are each independently bromo, chloro, iodo, methyl, ethyl, n -propyl, i -propyl, n -butyl, i -butyl, t -butyl, n -pentyl, i -pentyl, n -hexyl, i -hexyl, phenyl, naphthyl, biphenyl, terphenyl, anthryl, indenyl, phenanthryl, methoxy, ethoxy, n -propyloxy, i -propyloxy, n -butoxy, i -Butoxy, t -butoxy, hydroxymethyl, hydroxyethyl, hydroxy n -propyl, hydroxy n -butyl, hydroxy i -butyl, hydroxy n -pentyl, hydroxy i -pentyl, hydroxy n -Hexyl, hydroxy i -hexyl, hydroxymethoxymethyl, hydroxymethoxyethyl, hydroxymethoxypropyl, hydroxymethoxybutyl, hydroxyethoxymethyl, hydroxyethoxyethyl, hydroxyethoxypropyl And hydroxyethoxybutyl, hydroxyethoxypentyl or hydroxyethoxyhexyl. 제1항에 있어서, The method of claim 1, 상기 조성물은 바인더 수지, 에틸렌성 불포화 결합을 갖는 중합성 화합물, 상기 화학식 1의 광중합 개시제 및 착색제를 포함하는 것을 특징으로 하는 블랙매트릭스 포토레지스트 조성물.The composition is a black matrix photoresist composition comprising a binder resin, a polymerizable compound having an ethylenically unsaturated bond, a photopolymerization initiator and a colorant of the formula (1). 제3항에 있어서, The method of claim 3, 상기 바인더 수지는 아크릴계 수지, 카도계 수지 및 실리콘계 수지 중 선택되는 1종 이상을 사용하는 것을 특징으로 하는 블랙매트릭스 포토레지스트 조성물.The binder resin is a black matrix photoresist composition, characterized in that at least one selected from acrylic resin, cardo resin, and silicone resin. 제3항에 있어서, The method of claim 3, 상기 착색제는 카본블랙, 티탄블랙, 아세킬렌블랙, 아닐린블랙, 퍼릴렌블랙, 티탄산스트론튬, 산화크롬 및 세리아 중에서 선택되는 적어도 1종 이상을 사용하는 것을 특징으로 하는 블랙매트릭스 포토레지스트 조성물.The colorant is a black matrix photoresist composition, characterized in that at least one selected from carbon black, titanium black, acekylene black, aniline black, perylene black, strontium titanate, chromium oxide and ceria. 제3항에 있어서, The method of claim 3, 상기 착색제의 함량은 바인더 수지 100 중량부 기준으로 1 내지 300 중량부 사용하는 것을 특징으로 하는 블랙매트릭스 포토레지스트 조성물.The content of the colorant is a black matrix photoresist composition, characterized in that 1 to 300 parts by weight based on 100 parts by weight of the binder resin. 제1항에 있어서,The method of claim 1, 상기 조성물은 티옥산톤계 화합물, 아세토페논계 화합물, 비이미다졸계 화합물, 트리아진계 화합물, 티올계 화합물, 및 화학식 1로 표시되는 화합물 이외의 O-아실옥심계 화합물로 이루어지는 군으로부터 선택되는 1종 또는 2종 이상의 추가 광중합 개시제를 더 포함하는 것을 특징으로 하는 블랙매트릭스 포토레지스트 조성물.The composition is one selected from the group consisting of thioxanthone compounds, acetophenone compounds, biimidazole compounds, triazine compounds, thiol compounds, and O-acyl oxime compounds other than the compound represented by the formula (1). Or two or more additional photopolymerization initiators.
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