WO2016064003A1 - Method for preparing integrated circuit device package - Google Patents

Abstract

A method for preparing an integrated circuit device package can comprise the steps of: preparing an integrated circuit device having formed on one side thereof a pad for electrically connecting to the outside; forming on one side of the integrated circuit device an insulating film pattern which is formed from a flexible material, having a flexible thickness so as to be bent or folded, and has a contact hole which exposes the pad; forming a flexible electrical wiring inside the contact hole so as to be electrically connected to the pad; forming the integrated circuit device into a flexible integrated circuit device, which has a thickness so as to be bent or folded, by thinning the other side of the integrated circuit device; and attaching a substrate, which is formed from a flexible material and has a flexible thickness, on the other side of the flexible integrated circuit device such that the flexible integrated circuit device can be packaged.

Description

Manufacturing Method of Integrated Circuit Device Package

The present invention relates to a method for manufacturing an integrated circuit device package, and more particularly, to a method for manufacturing an integrated circuit device package having a flexible structure that can be flexed and unfolded freely.

Currently, the electronics industry is expanding its application range. Accordingly, packaging technologies for integrated circuit devices, such as semiconductor memories, are also increasingly required for high capacity, thinness, and miniaturization, and various solutions for solving them are being developed. In particular, recently, flexible integrated circuit devices capable of bending have been developed, and flexible flexible integrated circuit device packages including the aforementioned integrated circuit devices have been developed.

In addition, the present applicant has invented the integrated circuit device package having the flexible structure mentioned above, and filed with the Korean Patent Office on April 26, 2012 as No. 10-2012-0043755 (hereinafter referred to as 'quoting document'). In the manufacturing of the integrated circuit device package disclosed in the cited document, a thinning process is performed on the integrated circuit device so that the integrated circuit device has a flexible structure, and then a wiring process for electrical connection with the integrated circuit device is performed. In particular, laser drilling is performed in the wiring process.

However, as disclosed in the cited document, if laser drilling or the like is performed after thinning the integrated circuit device, the integrated circuit device may be greatly damaged. This is because, by thinning, a process of directly impacting an integrated circuit device having a thin thickness such as laser drilling is performed.

Therefore, in the manufacture of an integrated circuit device package having a conventional flexible structure, by performing a process that can be directly impacted on an integrated circuit device having a thin thickness, damage to the integrated circuit device package manufactured accordingly, As a result, there is a problem that can interfere with the reliability of the integrated circuit device package due to the process stress.

Disclosure of Invention An object of the present invention is to provide an integrated circuit device package and a method of manufacturing the same, which can minimize the impact on an integrated circuit device having a thin thickness.

According to an aspect of the present invention, there is provided a method of manufacturing an integrated circuit device package, the method including: preparing an integrated circuit device having pads for electrical connection to an outside thereof; Forming an insulating layer pattern having a contact hole exposing the pad and having a flexible thickness and a flexible material that can be bent or folded on one surface of the integrated circuit device; Forming a flexible electrical wire in the contact hole to be electrically connected to the pad; Thinning the other surface of the integrated circuit device to form a flexible integrated circuit device having a thickness that can be bent or folded; And attaching a substrate made of a flexible thickness and a flexible material to the other surface of the flexible integrated circuit device so that the flexible integrated circuit device is packaged.

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention mentioned above, the thickness of the substrate may be 0.8 to 1.2 times the thickness of the insulating layer pattern.

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention mentioned above, the attachment of the substrate may be achieved by interposing a film for die attach bonding between the other surface of the flexible integrated circuit device and the substrate. have.

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention, the thickness of the substrate including the die attach bonding film may be 0.8 to 1.2 times the thickness of the insulating layer pattern.

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention mentioned above, the attachment of the substrate is performed by performing a transfer process so that a die attach bonding film is interposed between the other surface of the flexible integrated circuit device and the substrate. Can be achieved by

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention mentioned above, the integrated circuit device package is manufactured at a wafer level in which a plurality of flexible integrated circuit devices are disposed on the same plane. The method may further include singulating the flexible integrated circuit devices into respective ones before attaching the devices to the substrate.

The integrated circuit device package may be manufactured at a wafer level in which a plurality of flexible integrated circuit devices are disposed on the same plane, and the flexible integrated circuit devices may be separated from each other after attaching the flexible integrated circuit devices to the substrate. The method may further include singulating.

According to the method of manufacturing an integrated circuit device package of the present invention, after the wiring process is performed in manufacturing an integrated circuit device package having a flexible structure, a process of thinning the integrated circuit device to have a thin structure is performed. That is, in the method of manufacturing an integrated circuit device package of the present invention, a wiring process is performed on an integrated circuit device having a relatively thick thickness. In particular, even in the wiring process, a photolithography process is performed instead of laser drilling.

Therefore, in the integrated circuit device package obtained by the manufacturing method of the present invention, since the impact on the integrated circuit device can be relatively reduced, damage to the integrated circuit device can be minimized, and as a result, process stress can be minimized. By sufficiently reducing the reliability of the integrated circuit device package can be expected.

1 to 3 are cross-sectional views schematically illustrating a method of manufacturing an integrated circuit device package according to an embodiment of the present invention.

4 is a cross-sectional view illustrating a method of manufacturing an integrated circuit device package according to another exemplary embodiment of the present invention.

5 is a configuration diagram illustrating an example of a transfer process in the method of manufacturing the integrated circuit device package of FIG. 4.

6 is a configuration diagram illustrating another example of a transfer process in the method of manufacturing the integrated circuit device package of FIG. 4.

With respect to the embodiments of the present invention disclosed in the text, specific structural to functional descriptions are merely illustrated for the purpose of describing embodiments of the present invention, embodiments of the present invention may be implemented in various forms and It should not be construed as limited to the embodiments described in. As the inventive concept allows for various changes and numerous modifications, particular embodiments will be illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "having" are intended to indicate that there is a feature, number, step, action, component, part, or combination thereof that is described, and that one or more other features or numbers are present. It should be understood that it does not exclude in advance the possibility of the presence or addition of steps, actions, components, parts or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. .

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 to 3 are cross-sectional views schematically illustrating a method of manufacturing an integrated circuit device package according to an embodiment of the present invention.

Referring to FIG. 1, an integrated circuit device 40 having a pad 43 for electrical connection to the outside is provided on one surface. Examples of the integrated circuit device 40 include semiconductor devices such as memory devices, non-memory devices, and the like, and active devices and passive devices. The integrated circuit device 40 can be obtained by forming circuit patterns of various structures on the substrate 41 made of silicon.

Subsequently, an insulating film pattern 45 having a contact hole exposing the pad 43 is formed on one surface of the integrated circuit device 40 on which the pad 43 is formed. The insulating film pattern 45 mentioned above may be obtained by forming an insulating film on one surface of an integrated circuit device on which the pad 43 is formed, and then performing a photolithography process using a photoresist as a mask. It may also be obtained by performing a laser drilling process.

In particular, in the present invention, a process such as a photolithography process, a laser drilling process, or the like is performed before the integrated circuit device 40 is formed into a flexible integrated circuit device having a bending or collapsible thickness, which will be described later. Accordingly, a small impact is applied to the flexible integrated circuit device as compared with the photolithography process, the laser drilling process, and the like. This is because the photolithography process, the laser drilling process, etc. are performed on the integrated circuit device 40 having a relatively thicker thickness than the flexible integrated circuit device.

Therefore, in the present invention, since the photolithography process, the laser drilling process, and the like, which are subjected to impact, are performed before forming the flexible integrated circuit device, the reliability of the integrated circuit device package having the flexible structure as the final product is improved. Can be.

In addition, the insulating film pattern 45 mentioned above is made of a flexible thickness and a flexible material that can be bent or folded. Thus, the insulating film pattern 45 may have a film structure.

The electrical wiring 46 is formed in the contact hole of the insulating film pattern 45. The formation of the electrical wiring 46 is mainly accomplished by filling a conductive material for forming into the electrical wiring 46 in the contact hole. Thus, the pad 43 is electrically connected by the aforementioned electrical wiring 46.

The electrical wiring 46 mentioned above is also made of a flexible material. Thus, the electrical wiring 46 may be made of a metal material having excellent ductility.

As described above, in the present invention, the insulating film pattern 45 and the electrical wiring 46 are formed to have a flexible thickness and a flexible material so that the integrated circuit device package described later may have a flexible structure.

Referring to FIG. 2, the other surface of the integrated circuit device 40 is thinned. In other words, the silicon substrate 41 is thinned to have a thin thickness. As described above, in the present invention, the other surface of the integrated circuit device 40 is thinned to form the flexible integrated circuit device 53 having a thickness that the integrated circuit device 40 can be bent or folded. In addition, reference numeral 55 is a substrate made of a silicon material having a thin thickness for manufacturing the flexible integrated circuit device 53.

Here, the thickness of the flexible integrated circuit device 53 that can be bent or folded may be about 1.0 to 50 μm. In other words, the integrated circuit device 40 is thinned to a thickness of about 1.0 to 50 μm. If the thickness is less than about 1.0 μm, it is not preferable because the flexible integrated circuit device 53 is too thin and the handling of the flexible integrated circuit device 53 is not easy. It is not desirable because it does not have a collapsible structure.

Referring to FIG. 3, a flexible integrated circuit device 53 is packaged. That is, the substrate 51 for packaging is attached to the other surface of the flexible integrated circuit device 53. The substrate 51 mentioned above is also made of a flexible thickness and a flexible material. Examples of the substrate 51 include a lead frame, a printed circuit board, a flexible printed circuit board, and the like made of a flexible thickness and a flexible material.

As described above, in the present invention, the integrated circuit device package 63 may be obtained by attaching a substrate 51 made of a flexible thickness and a flexible material to the other surface of the flexible integrated circuit device 53 so that the flexible integrated circuit device 53 is packaged. Can be. In particular, the integrated circuit device package 63 according to the present invention includes an insulating film pattern 45, an electrical wiring 46, a flexible integrated circuit device 53, and a substrate 51 made of a flexible thickness and a flexible material. The circuit element package 63 itself may also be flexible. Thus, the integrated circuit device package 63 of the present invention may also have a structure that can be bent or folded.

In the integrated circuit device package 63 manufactured according to the present invention, the thickness L2 of the insulating layer pattern 53 and the thickness L1 of the substrate 51 should be related to each other. When the integrated circuit device package 63 is bent, a compressive force is applied to the substrate 51 when a tensile force is applied to the insulating film pattern 45 with the flexible integrated circuit device 53 in a neutral plane. This is because a tensile force is applied to the substrate 51 when a compressive force is applied to the 45. Thus, as mentioned, if the thickness L2 of the insulating film pattern 45 and the thickness L1 of the substrate 51 do not correlate with each other, when the integrated circuit device package 63 is bent, the insulating film pattern 45 or the substrate A situation may arise where (51) is compromised.

Therefore, the thickness L1 of the substrate 51 is preferably about 0.8 to 1.2 times and more preferably about 0.9 to 1.1 times based on the thickness L2 of the insulating film pattern 45.

As described above, the present invention performs the process for the electrical wiring to the integrated circuit device 40 instead of the flexible integrated circuit device 53 in the manufacture of the integrated circuit device package 63 having a flexible structure ( The impact on 40 can be reduced relatively, and as a result, the damage caused by the process of the integrated circuit device 40 can be minimized.

4 is a cross-sectional view illustrating a method of manufacturing an integrated circuit device package according to another exemplary embodiment of the present invention.

First, since the integrated circuit device package of FIG. 4 has the same structure as the integrated circuit device package of FIG. 3 except for the die attach bonding film, the same reference numerals are used for the same structure, and a detailed description thereof will be omitted. Shall be.

Referring to FIG. 4, a substrate is attached to the other surface of the flexible integrated circuit device 53 by interposing a die attach bonding film (DAF) 65 between the other surface of the flexible integrated circuit device 53 and the substrate 51. (51) is attached. That is, the flexible integrated circuit device 53 is packaged using the die attach bonding film 65 to obtain the integrated circuit device package 63. In addition, in addition to the die attach bonding film 65, a double-sided tape or the like may be used in attaching the substrate during packaging to obtain the integrated circuit device package 63 mentioned above.

In particular, when the die attach bonding film 65 is used, the thickness L3 of the substrate 51 may include the die attach bonding film 65. Accordingly, the thickness L3 of the substrate 51 including the die attach bonding film 65 is preferably about 0.8 to 1.2 times the thickness L2 of the insulating film pattern 45, and is about 0.9 to 1.1. It is more preferable that it is a ship.

And the attachment of the board | substrate 51 using the die attach bonding film 65 performs a transfer process so that the die attach bonding film 65 may be interposed between the other surface of the flexible integrated circuit element 53, and the board | substrate 51. FIG. By performing.

Hereinafter, the transfer process for attachment of the substrate 51 using the mentioned die attach bonding film 65 will be described.

5 is a configuration diagram illustrating an example of a transfer process in the method of manufacturing the integrated circuit device package of FIG. 4.

Referring to FIG. 5, the transfer material 200 to which the flexible integrated circuit device 53 is attached to the first adhesive tape 203 is provided. Here, the aforementioned first adhesive tape 203 may be provided to have a weaker adhesive strength than the original adhesive strength of the first adhesive tape 203 by ultraviolet irradiation or heating. Thus, the first adhesive tape 203 mentioned above may include a curable adhesive tape which is weakened when the ultraviolet ray is irradiated or heated. Examples of the curable adhesive tape mentioned include an ultraviolet curable adhesive tape, a thermosetting adhesive tape, and the like.

The first adhesive tape 203 has a structure in which a peripheral portion thereof is supported by the ring frame 205. Therefore, the plate 11 is placed with a transfer material 200 including a flexible integrated circuit element 53 attached to the first adhesive tape 203 supported by the ring frame 205.

Subsequently, the plate 11, on which the transfer material 200 to which the flexible integrated circuit element 53 is attached, is placed on the first adhesive tape 203, supports the ring frame 205 using the frame supporter 15. The tension may be applied to the first adhesive tape 203 by lifting and lowering the chuck table 13. Here, the tension is applied to the first adhesive tape 203 to more easily detach the flexible integrated circuit device 53 from the first adhesive tape 203.

In addition, the plate 11 on which the transfer material 200 is placed is transferred in the first direction. At this time, the transfer of the plate 11 mentioned above may be made by the plate 11 itself, or may be made by using the transfer unit 31 or the like.

The supply and withdrawal of the second adhesive tape 301 is performed along the circumference of the roller 21 of the detachable portion 19. At this time, the roller 21 of the detachable portion 19 mentioned above may be provided to rotate in the second direction from the first direction. Incidentally, the supply and withdrawal of the second adhesive tape is made by members 23 and 25.

Here, the mentioned second adhesive tape 301 may include a curable adhesive tape such as an ultraviolet curable adhesive tape, a thermosetting adhesive tape, or the like that is the same as the first adhesive tape 203. In addition, since the second adhesive tape 301 does not perform ultraviolet irradiation or heating, the second adhesive tape 301 may have a larger adhesive force than that of the first adhesive tape 203.

As such, the plate 11 is transported in the first direction, and the detachable portion 19 is rotated in the second direction from the first direction, thereby adhering to the detachable portion 19 and the transfer material 200 in the first region. Flexible integrated circuit elements 53 are in contact. At this time, the adhesive force of the second adhesive tape 301 at the detachable portion 19 is greater than that of the first adhesive tape 203 to which the flexible integrated circuit element 53 is attached, and to the first adhesive tape 203. Since the tension is applied, the flexible integrated circuit device 53 is transferred to the second adhesive tape 301.

Subsequently, the flexible integrated circuit device 53, which is transfer-attached to the second adhesive tape 301 of the detachable portion 19, moves from the first direction to the second direction according to the rotation of the roller 21 of the detachable portion 19. Rotate At this time, the adhesive strength weakening portion 29 is used to weaken the original adhesive strength of the second adhesive tape 301. That is, the original adhesive force of the second adhesive tape 301 may be weakened by performing ultraviolet irradiation or heating on the second adhesive tape 301 using the adhesive force weakening unit 29. Thus, the second adhesive tape 301 may have a weaker adhesive force than the original adhesive force.

As mentioned, the flexible integrated circuit device 53, which is transferred and attached to the second adhesive tape 301 as the roller 21 rotates, contacts the substrate 51 transferred in the second direction in the second area.

As described above, the substrate 51 is transferred in the second direction, and the detachable portion 19 is rotated from the first direction to the second direction so that the substrate 51 and the second adhesive tape 301 are moved in the second area. The attached flexible integrated circuit element 53 is in contact. At this time, the adhesive force of the die attach bonding film 65, which is an adhesive portion for transferring the flexible integrated circuit element 53, is greater than the second adhesive force of the second adhesive tape 301 to which the flexible integrated circuit element 53 is attached. Due to its size, the flexible integrated circuit device 53 is transferred to the substrate 51.

Thus, the flexible integrated circuit element 51 mentioned above may be transferred to the substrate 51 from the first adhesive tape 203 of the transfer material 200.

As described above, in the present invention, the substrate 51 may be attached to the other surface of the flexible integrated circuit device 53 by performing the aforementioned transfer process.

The integrated circuit device package manufacturing method of the present invention is performed at the wafer level in which a plurality of flexible integrated circuit devices 53 are disposed on the same plane.

Therefore, a sawing process, which is a process of separating the flexible integrated circuit elements 53, is required. Accordingly, in the present invention, a singling process is performed so that the flexible integrated circuit devices 53 are separated from each other before the flexible integrated circuit devices 53 are attached to the substrate 51. can do.

6 is a configuration diagram illustrating another example of a transfer process in the method of manufacturing the integrated circuit device package of FIG. 4.

First, since the transfer process in FIG. 6 is the same as the transfer process in FIG. 5 except for the singulation structure of the flexible integrated circuit device, the same reference numerals are used for the same structure, and a detailed description thereof will be omitted.

Referring to FIG. 6, a sawing process, which is a process of separating the flexible integrated circuit devices 53, is performed after attaching the flexible integrated circuit device 53 to the substrate 51. That is, by attaching the flexible integrated circuit device 53 to the substrate 51 and performing a sawing process so that the flexible integrated circuit devices 53 are separated from each other, singulation of each of the flexible integrated circuit devices 53 is performed. You can do it.

Thus, when singulating each of the flexible integrated circuit elements 53 before performing the transfer process as shown in FIG. 5, the flexible integrated circuit device 53 is subjected to a sawing process, and the transfer process as shown in FIG. 6. When performing the singulation of each of the flexible integrated circuit devices 53 after the operation, the flexible integrated circuit device 53 and the substrate 51 are subjected to a sawing process.

As described above, in the present invention, a process of thinning an integrated circuit device to have a thin structure after performing a wiring process in fabricating an integrated circuit device package having a flexible structure minimizes damage to the integrated circuit device, thereby reducing process stress. Because of this, the reliability of the integrated circuit device package can be improved sufficiently, resulting in improved product competitiveness.

While the foregoing has been described with reference to preferred embodiments of the present invention, those skilled in the art will be able to variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. It will be appreciated.

* Explanation of the sign

40: integrated circuit device 41, 55: silicon substrate

43: pad 45: insulating film pattern

46: electrical wiring 51: substrate

53, 63: flexible integrated circuit device

65: film for die attach bonding

Claims (6)

Providing an integrated circuit device having a pad formed on one surface thereof for electrical connection with the outside; Forming an insulating layer pattern having a contact hole exposing the pad and having a thin thickness and a flexible material that can be bent or folded on one surface of the integrated circuit device; Forming a flexible electrical wire in the contact hole to be electrically connected to the pad; Thinning the other surface of the integrated circuit device to form a flexible integrated circuit device having a thin thickness that can be bent or folded; And Attaching a substrate made of a thin material and a flexible material that can be bent or folded to the other surface of the flexible integrated circuit device so that the flexible integrated circuit device is packaged. The thickness of the substrate is a manufacturing method of the integrated circuit device package, characterized in that 0.8 to 1.2 times the thickness of the insulating film pattern. The method of claim 1, wherein the attachment of the substrate is achieved by interposing a film for die attach bonding between the other surface of the flexible integrated circuit device and the substrate. The method of claim 2, wherein a thickness of the substrate including the die attach bonding film is 0.8 to 1.2 times the thickness of the insulating layer pattern. The fabrication of an integrated circuit device package according to claim 2, wherein the attachment of the substrate is achieved by performing a transfer process such that a die attach bonding film is interposed between the other surface of the flexible integrated circuit device and the substrate. Way. The method of claim 1, wherein the integrated circuit device package is manufactured at a wafer level in which a plurality of flexible integrated circuit devices are disposed on the same plane. And singulating the flexible integrated circuit devices to be separated into respective ones before attaching the flexible integrated circuit devices to the substrate. The method of claim 1, wherein the integrated circuit device package is manufactured at a wafer level in which a plurality of flexible integrated circuit devices are disposed on the same plane. And after the flexible integrated circuit device is attached to the substrate, singulating the flexible integrated circuit devices to be separated into each of the flexible integrated circuit devices.

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