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WO2016045227A1 - 无主栅、高效率背接触太阳能电池模块、组件及制备工艺 - Google Patents

无主栅、高效率背接触太阳能电池模块、组件及制备工艺 Download PDF

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Publication number
WO2016045227A1
WO2016045227A1 PCT/CN2015/000198 CN2015000198W WO2016045227A1 WO 2016045227 A1 WO2016045227 A1 WO 2016045227A1 CN 2015000198 W CN2015000198 W CN 2015000198W WO 2016045227 A1 WO2016045227 A1 WO 2016045227A1
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Prior art keywords
electrode
solar cell
back contact
cell module
conductive
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Ceased
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PCT/CN2015/000198
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English (en)
French (fr)
Inventor
林建伟
夏文进
孙玉海
张育政
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JOLYWOOD (SUZHOU) SUNWATT CO Ltd
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JOLYWOOD (SUZHOU) SUNWATT CO Ltd
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Application filed by JOLYWOOD (SUZHOU) SUNWATT CO Ltd filed Critical JOLYWOOD (SUZHOU) SUNWATT CO Ltd
Priority to US15/514,553 priority Critical patent/US10593822B2/en
Priority to SG11201702453PA priority patent/SG11201702453PA/en
Priority to EP15843790.5A priority patent/EP3200240A4/en
Priority to KR1020177008347A priority patent/KR20170048460A/ko
Priority to MYPI2017700962A priority patent/MY188090A/en
Priority to JP2017516947A priority patent/JP2017529704A/ja
Publication of WO2016045227A1 publication Critical patent/WO2016045227A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/908—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/804—Materials of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/906—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the materials of the structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H10F77/937—Busbar structures for modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention belongs to the field of solar cells, and in particular relates to a module without a main grid, a high efficiency back contact solar cell module, a component and a preparation process thereof.
  • a crystalline silicon solar cell that is dominant and mass-commercialized has its emitter and emitter electrodes located on the front side of the cell (the light side), that is, the main gate and the auxiliary gate line are located on the front side of the cell. Due to the short electron diffusion distance of the solar grade silicon material, the emitter area is located on the front side of the battery to improve the collection efficiency of the carriers. However, since the grid line on the front side of the battery blocks part of the sunlight (about 8%), the effective light-receiving area of the solar cell is reduced and a part of the current is lost. In addition, when the battery sheets are connected in series, it is necessary to solder the tinned copper strip from the front side of one battery to the back side of the other battery.
  • the battery sheet may be broken due to its too hard, but if Using a thin, wide tinned copper strip will mask too much light. Therefore, no matter what kind of tin-plated solder ribbon is used, the loss and optical loss caused by the series resistance are brought about, which is disadvantageous for the thinning of the battery sheet.
  • the back contact solar cell refers to a type of the emitter electrode and the base electrode of the battery which are located on the back of the battery. Solar battery.
  • Back contact battery has many advantages: 1 high efficiency, because the shading loss of the front grid electrode is completely eliminated, Thereby improving battery efficiency. 2
  • the battery can be thinned, the metal connecting devices used in series are on the back of the battery, and there is no connection from the front to the back. Thinner silicon wafers can be used, thereby reducing the cost. 3 is more beautiful, the front color of the battery is even, which meets the aesthetic requirements of consumers.
  • Back contact solar cells include various structures such as MWT, EWT and IBC.
  • the key to large-scale commercial production of back-contact solar cells is how to efficiently and cost-effectively connect back-contact solar cells in series and make them into solar modules.
  • the MWT component is usually prepared by using a composite conductive back layer material, applying a conductive paste on the conductive back layer material, punching a corresponding position on the package material to allow the conductive adhesive to penetrate the package material, and accurately placing the back contact solar cell in the package.
  • the material is made to make the conductive dots on the conductive back layer material contact with the electrodes on the back contact solar cell through the conductive adhesive, then lay the upper layer EVA and the glass on the battery sheet, and then flip the entire laminated module into the laminating machine for lamination. .
  • the process has the following defects: 1.
  • the composite conductive back layer material used is a composite conductive metal foil, usually a copper foil, in the back layer material, and requires laser etching or chemical etching of the copper foil. Since laser etching is still easy to operate for simple patterns, the etching speed is slow for complex patterns, and the production efficiency is low. However, in addition to the need to prepare a complex shape and corrosion-resistant mask in advance, there is environmental pollution and corrosion liquid to polymer base.
  • the conductive back layer material manufactured by this method has a complicated manufacturing process and is extremely expensive. 2. It is necessary to punch the encapsulating material of the back layer of the solar cell in order to make the conductive adhesive penetrate the encapsulating material. Since the encapsulating material is usually a viscoelastic body, it is extremely difficult to perform precise punching. 3. Need precise dispensing equipment to apply conductive adhesive to the corresponding position of the back layer material. For the MWT battery with less back contact point, it can operate, and the back contact area of IBC and other back contact points is small and large. The use of dispensing equipment for batteries is simply not possible.
  • the IBC battery uses a technique of shallow diffusion, light doping, and SiO 2 passivation layer on the front side to reduce the composite loss, and the diffusion area is limited to a small area on the back side of the battery. These diffusion areas are arranged in a lattice on the back of the cell, and the diffusion region is metal. Contact is limited to a small number of small contact points that are limited to a small range.
  • the IBC battery reduces the area of the re-diffusion zone on the back side of the cell, and the saturated dark current of the doped region can be greatly reduced, and the open circuit voltage and conversion efficiency are improved. At the same time, collecting current through a large number of small contact points reduces the transmission distance of the current on the back surface, and greatly reduces the series internal resistance of the component.
  • IBC back contact battery has attracted much attention from the industry due to its high efficiency that is difficult to achieve with conventional solar cells, and has become a research hotspot of new generation solar cell technology.
  • the P-N junctions of the IBC solar cell modules are located adjacent to each other and are all on the back side of the cell sheet, and it is difficult to connect the IBC battery modules in series and prepare them into components.
  • the prior art also has various improvements to the IBC non-main gate back contact solar cell.
  • Sunpower connects adjacent P or N emitters through a silver paste screen printed fine gate line to finally conduct current. Diverted to the edge of the cell sheet, printing large solder joints on the edge of the cell sheet and then using the connecting strip for soldering in series.
  • the solar field has been using screen printing technology to form a current confluence, such as the newly applied patents 201310260260.8, 201310606634.7, 201410038687.8, 201410115631.8.
  • Patent WO2011143341A2 discloses a non-main gate back contact solar cell comprising a substrate, a plurality of adjacent P-doped layers and an N-doped layer on the back side of the substrate, a P-doped layer and an N-doped layer and a metal contact layer Laminated, and a passivation layer is disposed between the P-doped layer and the N-doped layer and the metal contact layer, the passivation layer has a plurality of nano-connection holes thereon, and the nano-connection holes are connected to the P-doped layer and the N-doped layer
  • the impurity layer is in contact with the metal; however, the invention uses the nanopore to connect the metal contact layer to increase the electrical resistance, and the manufacturing process is complicated, and the manufacturing equipment has high requirements, and the invention cannot realize the connection of the plurality of solar cells and the electrical connection layer.
  • the integration of the battery sheets into solar battery modules not only facilitates assembly into components, but also facilitates adjustment of series and parallel connection between modules, thereby facilitating adjustment of the series-parallel connection of the battery sheets in the solar battery module and reducing the connection resistance of the components.
  • Patent US20110041908 A1 discloses a back contact solar cell having an elongated interdigitated emitter region and a base region on the back surface and a method for producing the same, having a semiconductor substrate having an elongated base on the back surface of the semiconductor substrate a region and an elongated emitter region, the base region being of a base semiconductor type, the emitter region being of an emitter semiconductor type opposite to the base semiconductor type; and the elongated emitter region being provided for electrically contacting the emitter region An elongated emitter electrode having an elongated base electrode for electrically contacting the base region; wherein the elongated emitter region has a smaller structural width than the elongated emitter electrode, and wherein the elongated base The region has a smaller structural width than the elongated base electrode.
  • the elongated conductive member used in the invention enables the solar cell to have good current collecting performance, but requires a large number of conductive members to effectively collect current, thereby causing an increase in
  • Patent EP 2 709 162 A1 discloses a solar cell for use in a non-main gate back contact solar cell, disclosing an electrode contact unit which is arranged separately and alternately arranged, and the electrode contact unit is connected by a longitudinal connection body to form a "work" electrode structure; The structure is connected twice on the cell. The first time is that the cell is connected to the electrode contact unit, and then the electrode contact unit is connected through the connector. The two connections bring about process complexity and cause Multiple electrode contact points may cause "disconnection” or “misconnection”, which is not conducive to the overall performance of the solar cell without the back contact of the main gate.
  • the IBC battery can also screen a relatively wide silver paste grid line between adjacent P or N emitters to reduce the series resistance, but the cost increases sharply due to the increase in the amount of silver. At the same time, the wide grid line also causes the problem that the insulation effect between the PNs is deteriorated and the electric leakage is easy.
  • the object of the present invention is to provide a main gridless, high efficiency back contact solar cell module and component capable of effectively preventing short circuit, crack resistance, high efficiency and high stability of the P electrode and the N electrode.
  • the preparation process has the advantages of simple preparation process and greatly reduced cost.
  • a main gateless, high efficiency back contact solar cell module comprising a cell sheet and an electrical connection layer, the backlight surface of the cell sheet having a P electrode and a N-type doping connected to the P-type doped layer A layer-connected N electrode, the electrical connection layer comprising a plurality of conductive lines arranged in parallel, the plurality of conductive lines being electrically connected to the P electrode or the N electrode, respectively.
  • the P electrode is a point P electrode or a line type P electrode
  • the N electrode is a point N electrode or a line type N electrode.
  • the diameter of the point P electrode is 0.4 mm to 1.5 mm, and the distance between two adjacent point P electrodes connected on the same conductive line is 0.7 mm to 10 mm, and the width of the linear P electrode is 0.4 mm to 1.5 mm; the diameter of the point N electrode is 0.4 mm to 1.5 mm, and the distance between two adjacent point N electrodes connected on the same conductive line is 0.7 mm to 10 mm, the line
  • the type N electrode has a width of 0.4 mm to 1.5 mm.
  • the total number of the dot-shaped P electrodes and the dot-shaped N electrodes is 1,000 to 40,000.
  • the dot electrode or the wire electrode is any one of a silver paste, a conductive paste, a polymer conductive material, or a solder.
  • the distance between the conductive line connected to the P electrode and the conductive line connected to the N electrode is 0.1 mm to 20 mm.
  • the conductive wire is made of any one or a combination of copper, aluminum, steel, copper clad aluminum or copper clad steel; the conductive wire has a cross-sectional shape of any one of a circle, a square or an ellipse. kind or several combinations; The diameter of the circumscribed circle of the cross-sectional shape of the conductive wire is 0.05 mm to 1.5 mm.
  • the surface of the conductive wire is plated with an anti-oxidation coating material or coated with a conductive paste.
  • the anti-oxidation coating material is any one of tin, tin-lead alloy, tin-bismuth alloy or tin-lead-silver alloy; the thickness of the plating layer or the conductive adhesive layer of the conductive wire is 5 ⁇ m to 50 ⁇ m.
  • the conductive paste is a low-resistivity conductive adhesive, and the main component thereof is conductive particles and a polymer binder.
  • the conductive particles in the conductive paste are any one or a combination of gold, silver, copper, gold-plated nickel, silver-plated nickel, and silver-plated copper; the conductive particles are spherical, flake-shaped, olive-shaped, Any one or several combinations of needles; the particle diameter of the conductive particles is from 0.01 ⁇ m to 5 ⁇ m.
  • the polymer binder in the conductive paste is any one or a combination of an epoxy resin, a urethane resin, an acrylic resin or a silicone resin, and the adhesive may be thermally cured or photocured.
  • the number of the conductive wires is from 10 to 500.
  • the electrical connection layer is provided with a P bus bar electrode and an N bus bar electrode, and the P bus bar electrode and the N bus bar electrode are disposed on both sides of the electrical connection layer.
  • the surface of the bus bar electrode has a concavo-convex shape.
  • thermoplastic resin or a thermosetting resin is provided at an insulating layer between the P electrode and the N electrode.
  • the resin is any one or a combination of two of an ethylene-vinyl acetate copolymer, a polyolefin resin, an epoxy resin, a polyurethane resin, an acrylic resin, and a silicone resin.
  • a main gateless, high efficiency back contact solar cell module comprising a front layer material front layer material connected from top to bottom, a packaging material, a solar cell layer, a packaging material, a back layer material back layer material, the solar cell layer
  • the solar cell module is the solar cell module described above, and the adjacent solar cell modules are electrically connected through bus bars on both sides of the electrical connection layer.
  • the solar cells in each solar cell module are connected in series with each other; the solar cell modules are sequentially connected in series, and the number of solar cells in each solar cell module is the same.
  • the solar cell layer has a number of cells ranging from 1 to 120, including 1 to 120 battery modules, and the battery module includes 1 to 120 battery cells.
  • the bus bars are connected by a conductive medium.
  • the conductive medium includes any one of a silver paste, a conductive paste, or a solder.
  • a method for preparing a main gridless, high efficiency back contact solar cell module comprising the steps of:
  • Step 1 preparing a solar cell module, straightening and tightening a plurality of conductive wires arranged in parallel, each of the conductive wires being electrically connected to the P electrode and the N electrode on the back surface of the cell; respectively, the P bus bar electrode and the N bus Strip electrodes are disposed on both sides of the electrical connection layer to prepare a solar cell module;
  • Step 2 preparing a solar cell layer, and electrically connecting the solar cell module prepared in step 1 through a bus bar electrode to prepare a solar cell layer;
  • Step 3 laminating in the order of the front layer material, the encapsulating material, the solar cell layer, the encapsulating material, and the back layer material, and laminating to obtain a battery assembly.
  • the P electrode and the N electrode on the cell sheet in the first step have a mirror symmetrical structure on a horizontal surface, and when the number of the cell sheets is greater than 1, the manner of assembling the battery sheet
  • the second battery piece is rotated 180° in the horizontal plane, and the edges of the two battery pieces are aligned, so that the P electrode on the second battery piece and the first piece are
  • the N electrode on the cell is on a conductive line, and then the third back contact battery is normally placed, so that the P electrode on the third cell and the N electrode of the second cell are on a conductive line, and the above operation is repeated to form a series connection. Structure to form a solar cell layer.
  • a method for preparing a high-efficiency back contact solar cell module wherein the electrical connection between the cell and the conductive line in the first step is by screen printing on the P-doped layer and the N-doped layer of the cell sheet
  • the conductive adhesive is coated, and the conductive adhesive can be cured to form a P electrode and an N electrode. After heating, the conductive wire is formed into an ohmic contact with the P electrode or the N electrode through the conductive adhesive. Electrical connection of the conductive wire to the battery sheet;
  • Another electrical connection between the battery chip and the conductive wire is to plate the low melting point material by a plating process on the conductive wire, and after the heating process, the conductive wire is doped with the P-type doped layer or the N-type doping.
  • the layer is fixed by fusion welding of a low melting point material to form a P electrode and an N electrode, and the electrical connection between the conductive wire and the cell sheet is achieved, and the low melting point material is any one of solder, tin-lead alloy, tin-bismuth alloy or tin-lead-silver alloy. .
  • the heating process uses a heating pad on the front side of the battery sheet; the heating temperature of the heating pad is 40 ° C to 80 ° C.
  • the heating method is any one or several combinations of infrared radiation, resistance wire heating or hot air heating, and the heating temperature is 150 ° C to 500 ° C.
  • the plating process is any one of hot dip plating, electroplating, or electroless plating.
  • the present invention has the following advantages over the prior art:
  • the invention eliminates the shading loss of the front gate line electrode, thereby improving the battery efficiency
  • the invention can realize the flaking of the battery, and the metal connecting devices used in series are on the back of the battery, eliminating the connection of the battery from the front to the back in the past, so that a thinner silicon wafer can be used, thereby reducing the cost;
  • the back contact solar cell of the invention is generally applicable to various structures such as MWT, EWT and IBC, and is more practical;
  • the component-integrated photovoltaic system produced by the technology of the present invention can completely avoid the problem that the current of the entire string will be significantly reduced due to the cracking of a battery piece and loss of a certain current, and the main grid without the main grid proposed by the invention
  • the back-discharge technology enables multi-point connection between the conductor and the cell, which makes the whole system extremely resistant to cracks and micro-cracks during manufacturing, transportation, installation and use. Good overall performance;
  • the solar cell electrode and the electrical connection layer are in a multi-point distributed contact, which reduces the electron collection distance and greatly reduces the series resistance of the component;
  • the invention adopts the no-gate wiring technology to prepare the electrical connection layer, realizes the collection of the battery electrons, makes the preparation process simpler, and greatly reduces the production cost of the solar cell;
  • the back contact solar cell used in the present invention does not require a main grid, which greatly reduces the amount of silver paste used, and significantly reduces the manufacturing cost of the back contact battery;
  • the arrangement of the bump shape of the bus bar electrode of the present invention can increase the contact area of the electrode and reduce the resistance.
  • the technology of the present invention can achieve welding between the electrical conductor and the battery sheet, and can greatly improve the long-term reliability of the assembly.
  • the components prepared by this technology there is a multi-point connection between the IBC battery and the conductor, and the connection points are more densely distributed, which can reach several thousand or even tens of thousands, and the path of current conduction in the cracked and microcracked portions of the silicon wafer is more optimized. Therefore, the loss due to microcracking is greatly reduced, and the quality of the product is improved.
  • photovoltaic systems after the cell is cracked, some areas on the cell will be separated from the main gate, and the current generated in this area cannot be collected. Photovoltaic systems are formed in a matrix to form a matrix with obvious bucket effect.
  • Glue safety glass a point shattered and looks unsightly, but the function of the entire glass is still there.
  • This technology breaks through the traditional battery string process, making the battery arrangement more free and compact.
  • the components using the above technology are expected to be smaller and lighter. For downstream project development, this means a smaller footprint in the installation. Area, lower roof load requirements and lower labor costs.
  • the non-main gate back-discharge technology can solve the connection problem of low-cost and high-efficiency back-contact solar cells, and reduce the cost by using copper wires instead of the silver main gate, realizing the real industrial scale production of back-contact solar cells, while improving efficiency. Reducing costs, providing photovoltaic systems with higher efficiency, lower cost, higher stability, better crack resistance and better photovoltaic modules, greatly enhance the competitiveness of photovoltaic systems and traditional energy.
  • the overall structure of the non-main gate, high-efficiency back contact solar cell used in the present invention is basically the same as that of the conventional back contact solar cell, but in the emitter region and the base region after the back contact solar cell completes the silver paste sintering and power bin test.
  • a thermoplastic or thermosetting resin is screen printed on the insulating layer between the electrodes. On the one hand, the resin can function to separate the insulating emitter electrode and the base electrode, and on the one hand, to bond the back contact solar cell and the back layer material during the lamination process.
  • FIG. 1 Schematic diagram of the back side of the point-free main grid and high efficiency back contact solar cell
  • Figure 2 is a schematic diagram of the back side of a linear non-main gate, high efficiency back contact solar cell
  • Figure 3 is a cross-sectional view of the conductive line ( Figure 3a, with two layers of conductive line cross-section, Figure 3b, with three layers of conductive line cross-section)
  • Figure 4 is a cross-sectional view of the high efficiency back contact solar cell module of Embodiments 1 and 2
  • FIG. 5 is a partial cross-sectional view of the solar cell module including the main gateless, high efficiency back contact solar cell module of Embodiments 1 and 2
  • FIG. 6 is a partial schematic view of the solar cell layer of the solar cell module
  • Figure 7 is a partial schematic view of the battery string
  • Figure 8 is a partial schematic view of the embodiment 1 and 3 cell module
  • FIG. 9 is a partial schematic view of the battery chip module of Embodiment 2
  • FIG. 10 is a cross-sectional view of a high-efficiency back contact solar cell module without a main gate
  • Figure 11 is a partial cross-sectional view of a solar cell module including a main gateless, high efficiency back contact solar cell module
  • It is a metal material such as copper, aluminum or steel
  • 2 is a metal material such as aluminum or steel different from 1
  • 3. is a tin, tin-lead, tin-bismuth or tin-lead-silver metal alloy solder; 4.
  • N-type doping a layer 41, a point N electrode; 42, a linear N electrode region; 43, an N conductive line connected to the N electrode; 44, a linear N electrode; 5, a P type doped layer; 51, a point P electrode; 52, a linear P electrode region; 53, a P conductive wire connected to the P electrode; 54, a linear P electrode; 6, an N-type single crystal silicon substrate; 7, an insulating layer; 8, a front layer material; 81, a back layer Material; 82, packaging material; 9, bus bar electrode; 91, N bus bar electrode; 92, P bus bar electrode; 10, solar cell layer; 101, first piece of back contact cell; 102, second piece back contact The battery sheet; 103, the third piece of back contact battery.
  • a main gateless, high efficiency back contact solar cell module includes a cell sheet and an electrical connection layer, the cell sheet includes an N-type single crystal silicon substrate 6, and the N-type single crystal silicon substrate 6 has a back surface.
  • a P electrode connected to the P-type doping layer 5 and an N electrode connected to the N-type doping layer 4, and a thermoplastic resin or a thermosetting resin are provided at the insulating layer 7 between the P electrode and the N electrode.
  • the P electrode is a dot P electrode 51
  • the N electrode is a dot N electrode 41
  • the dot P electrode 51 and the dot N electrode 41 are alternately arranged, and the total number of the dot P electrode 51 and the dot N electrode 41 It is 2080.
  • the diameter of the point P electrode 51 is 0.8 mm, the distance between adjacent dot-shaped P electrodes 51 is 1.5 mm.
  • the diameter of the dot-shaped N electrode 41 is 0.7 mm, the distance between the adjacent dot-shaped N electrodes 41 is 1.5 mm, and the center distance between the line of the dot-shaped P electrode 51 and the line of the dot-shaped N electrode 41 is 15 mm.
  • the electrode contact point is a solder material. The battery conversion efficiency was 20.2%.
  • a solar cell module including the above-described main gateless, high efficiency back contact solar cell module includes a front layer material 8 connected from top to bottom, a solar cell layer 10, and a back layer material 81.
  • the solar cell layer 10 includes a plurality of the above solar cell modules.
  • a method for fabricating a solar cell module including the above-described main gateless, high efficiency back contact solar cell module includes the following steps:
  • the conductive wire is a tinned wire having a three-layer structure, including the innermost wire 3 having a diameter of 0.8 mm, an intermediate layer of copper, a thickness of 0.2 mm, and the outermost layer being tin-plated. Layer, thickness 0.3mm.
  • the tinned wire has a circular cross section and a diameter of 1.3 mm.
  • the second back contact cell sheet 102 is rotated by 180° in the horizontal plane and the above-mentioned main grid is not high.
  • the efficiency back contact solar cell module edge is aligned such that the spot P electrode 51 on the second back contact cell 102 is just in the same manner as the soldered tinned wire soldered to the dot N electrode 41 on the first back contact cell 101.
  • the tinned wires are soldered to the point P electrodes 51 of the second back contact cell 102.
  • 10 pieces of 298mm long tinned wire of the same type are connected to the back of the battery.
  • the extension wire of the tin-plated wire soldered on the dot-shaped N electrode 41 of the back contact cell 102 is combined and welded.
  • the analog structure shown in FIG. 7 is formed by analogy.
  • the welding temperature is 300-400 °C.
  • a heating pad can be used on the front side of the battery to prevent the temperature difference between the two sides of the battery from being excessively large, resulting in breakage or cracking of the battery sheet.
  • the temperature of the heating pad is controlled at 40-80 °C. As shown in FIG.
  • the fabricated series structure shown in FIG. 6 is connected in series using a conventional universal bus bar having a cross-sectional area of 8 ⁇ 0.22 mm, and the P conductive wires 53 are connected through the P bus bar electrode 92 to conduct N conduction.
  • the line 43 is connected by the N bus bar 91 to produce four strings of eight sheets each having a total of 32 back contact cell modules.
  • a non-main gate, high efficiency back contact solar cell module stacking and visual inspection in the order of the front layer material 8, the encapsulating material 82, the solar cell layer 10, the encapsulating material 82, and the backing layer material 81, wherein the encapsulating material 82 is EVA, and the laminated module is sent to a laminator for lamination.
  • the lamination parameters are set according to the fluidization characteristics of the EVA, and are usually laminated at 145 ° C for 16 minutes.
  • the laminated module is mounted with a metal frame, a junction box is installed, and power testing and visual inspection are performed.
  • a main gateless, high efficiency back contact solar cell module including a battery a sheet and an electrical connection layer
  • the battery sheet includes an N-type single crystal silicon substrate 6, and the back surface of the N-type single crystal silicon substrate 6 has a P electrode connected to the P-type doped layer 5 and an N electrode connected to the N-type doped layer 4,
  • An insulating layer 7 is provided between the P electrode and the N electrode, and the insulating layer 7 is a thermoplastic resin or a thermosetting resin. As shown in FIG.
  • the P electrode is a dot P electrode 51
  • the N electrode is a dot N electrode 41
  • the dot P electrode 51 and the dot N electrode 41 are alternately arranged, and the dot P electrode 51 and the dot N electrode are arranged.
  • the total number of 41 is 24,200.
  • the diameter of the dot-shaped P electrode 51 is 0.5 mm, and the distance between the adjacent dot-shaped P electrodes 51 is 1.4 mm.
  • the diameter of the dot-shaped N electrode 41 is 0.4 mm, the distance between the adjacent dot-shaped N electrodes 41 is 1.4 mm, and the center distance between the line of the dot-shaped P electrode 51 and the line of the dot-shaped N electrode 41 is 0.7 mm.
  • the electrode contact point is a solder material.
  • the battery conversion efficiency was 20.3%.
  • a solar cell module including the above-described main gridless, high efficiency back contact solar cell module includes a front layer material 8 connected from top to bottom, a solar cell layer 10, and a back layer material 81, as shown in FIG.
  • the solar cell layer 10 includes a plurality of main gateless, high efficiency back contact solar cell modules.
  • a method for fabricating a solar cell module including the above-described main gateless, high efficiency back contact solar cell module includes the following steps:
  • the pattern is respectively heated by infrared light to weld the conductive line to the point P electrode 51 on the back surface of the battery sheet to become a P conductive line 53; and then 110 154 mm long conductive wires of the same type are straightened and tightened, according to the first back
  • the back surface pattern of the battery sheet is contacted, and the conductive wire is soldered to the dot N electrode 41 on the back surface of the battery sheet by an electric soldering iron to form an N conductive line 43 to prepare an electrical connection layer, and 5 ⁇ 0.22 mm horizontal is used on both sides of the electrical connection layer.
  • the conductive wire is a tinned wire with a two-layer structure, including an inner layer of copper, a diameter of 0.25 mm, a tinned layer on the outer layer, a thickness of 0.025 mm, and a tin layer alloy composition of tin and lead 60. /40, which contains 60% tin and 40% lead.
  • the tinned wire has a circular cross section and a diameter of 0.28 mm.
  • Preparing the solar cell layer 10 aligning the edges of the above-mentioned non-main gate and high-efficiency back contact solar cell modules, so that the P bus bar electrode 92 of the solar cell module and the N bus bar electrode of the adjacent solar cell 91 is relatively aligned and connected by a conductive medium, the conductive medium is solder, and the soldering temperature is 300 to 400 ° C to form a solar cell string as shown in FIG.
  • each P-bus bar electrode 92 at each of the left and right ends of the high-efficiency back contact solar cell module is connected in series, each string has no main gate, and each column has no main gate and high
  • the N bus bar electrodes 91 at the left and right ends of the efficiency back contact solar cell module are connected in series to prepare 6 strings, 10 strings per string, and a total of 60 pieces of the main gridless, high efficiency back contact solar cell layer 10.
  • the bus bar used therein is a conventional bus bar having a cross-sectional area of 8 x 0.22 mm.
  • Preparation of solar cell module lamination and visual inspection in the order of the front layer material 8, EVA, solar cell layer 10, EVA and back layer material 81, and the laminated module is sent to a laminator for lamination.
  • the lamination parameters are set according to the fluidization characteristics of the EVA, and are usually laminated at 145 ° C for 16 minutes.
  • the laminated module is mounted with a metal frame, a junction box is installed, and power testing and visual inspection are performed.
  • a main gateless, high efficiency back contact solar cell module includes a cell sheet and an electrical connection layer.
  • the cell sheet includes an N-type single crystal silicon substrate 6 having a P-type doped layer 5 on the back side thereof. And an N-type doped layer 4, wherein the P-type doped layer 5 is provided with a linear P electrode region 52, and the N-type doped layer 4 is provided with a linear N electrode region 42, a linear P electrode region 52 and a linear N electrode The zones 42 are alternately arranged.
  • the linear P electrode region 52 has a width of 0.7 mm, and the distance between adjacent linear P electrode regions 52 is 1.5 mm.
  • the linear N electrode region 42 has a width of 0.5 mm, a distance between adjacent linear N electrode regions 42 of 1.5 mm, and a center distance between the linear P electrode region 52 and the linear N electrode region 42 of 2.0 mm.
  • the battery conversion efficiency was 20.5%.
  • An insulating layer 7 is provided between the linear P electrode region 52 and the linear N electrode region 42, and the insulating layer 7 is a thermoplastic resin or a thermosetting resin.
  • the electrical connection layer includes a plurality of conductive lines arranged in parallel, and the plurality of conductive lines are electrically connected to the line type P electrode region 52 or the line type N electrode region 42, respectively, to form a line type P electrode 54 or a line type N electrode 44.
  • a solar cell module including the above-described main gateless, high efficiency back contact solar cell module includes a front layer material 8 connected from top to bottom, a solar cell layer 10, and a back layer material 81.
  • the solar cell layer 10 includes a plurality of main gateless, high efficiency back contact solar cell modules.
  • a method for fabricating a solar cell module having the above-described main gateless, high efficiency back contact solar cell module includes the following steps:
  • the third back contact cell sheet 103 is normally placed such that the second sheet back contact cell line N electrode region 42 of the cell sheet 102 and the third sheet back contact cell sheet 103 line P electrode region 52 are aligned, and in the line type A 298 mm long tinned wire having a diameter of 0.33 mm having a two-layer structure was placed on the straight line. Then, 100 154 mm long tinned wires having a two-layer structure of 0.33 mm in diameter were placed on the linear N electrode region 42 of the third back contact cell sheet 103 while securing the solar cell module of the present embodiment. Both ends have 2mm epitaxial conductive lines for soldering to the bus bars.
  • the three back-contact cell sheets and the tin-plated wire are arranged to apply a slight pressure and heated by hot air to melt the tin-lead solder on the tin-plated wire and ohmically connect with the electrode region on the back-contact cell sheet.
  • a linear P electrode 54 is formed on the P electrode region 52, and a linear N electrode 44 is formed on the linear N electrode region 42, and finally a series structure as shown in FIG. 8 is formed, which is a solar cell module.
  • the hot air heating temperature is 300 to 400 °C. As shown in FIG.
  • the conductive wire of the present embodiment is a tin-plated metal wire having a two-layer structure, including an inner layer of a copper layer, a diameter of 0.3 mm, an outer layer of a tin-plated layer, and a thickness of 0.025 mm.
  • the alloy composition is tin-lead 60/40, which contains 60% tin and 40% lead.
  • the tinned wire has a circular cross section and a diameter of 0.33 mm.
  • the laminated module is sent to a laminating machine for lamination, lamination parameters It is set according to the vulcanization characteristics of EVA, and is usually laminated at 145 ° C for 16 minutes. Finally, the laminated module is mounted with a metal frame, a junction box is installed, and power testing and visual inspection are performed.
  • the fill factor is 76.87%.
  • the solar cell module composed of the main grid-free and high-efficiency back contact solar cell module prepared by the present invention can obtain a high filling factor, thereby improving the power generation efficiency of the module.
  • the utility model can effectively prevent the short circuit between the P electrode and the N electrode, resist cracking, high efficiency and high stability, and the technology has the advantages of simple preparation process and greatly reduced cost.

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Abstract

一种无主栅、高效率背接触太阳能电池模块、组件及制备工艺。该太阳能电池模块包括电池片（101，102，13）和电连接层，所述电池片（101，102，13）的背光面具有与P型掺杂层（5）连接的P电极（51）和与N型掺杂层（4）连接的N电极（41），所述电连接层包括平行排列的若干导电线（43，53），所述若干导电线（43，53）分别与所述P电极（51）或者所述N电极（41）电连接。还包括提供一种能够有效防止P电极（51）和N电极（41）短路、低成本、高耐隐裂、高效率、高稳定性的无主栅、高效率背接触太阳能电池模块、组件及制备工艺。

Description

无主栅、高效率背接触太阳能电池模块、组件及制备工艺 技术领域
本发明属于太阳能电池领域，具体涉及一种无主栅、高效率背接触太阳能电池模块、组件及制备工艺。
背景技术
能源是人类活动的物质基础，随着人类社会的不断发展和进步，对能源的需求与日俱增。传统的化石能源属于不可再生能源已经很难继续满足社会发展的需求，因此全球各国近年来对新能源和可再生源的研究和利用日趋火热。其中太阳能发电技术具有将太阳光直接转化为电力、使用简单、环保无污染、能源利用率高等优势尤其受到普遍的重视。太阳能发电是使用大面积的P-N结二极管在阳光照射的情况下产生光生载流子发电。
现有技术中，占主导地位并大规模商业化的晶体硅太阳电池，其发射区和发射区电极均位于电池正面(向光面)，即主栅、辅栅线均位于电池正面。由于太阳能级硅材料电子扩散距离较短，发射区位于电池正面有利于提高载流子的收集效率。但由于电池正面的栅线阻挡了部分阳光(约为8％)，从而使太阳能电池的有效受光面积降低并由此而损失了一部分电流。另外在电池片串联时，需要用镀锡铜带从一块电池的正面焊接到另一块电池的背面，如果使用较厚的镀锡铜带会由于其过于坚硬而导致电池片的碎裂，但若用细宽的镀锡铜带又会遮蔽过多的光线。因此，无论使用何种镀锡焊带都会带来串联电阻带来的损耗和光学损耗，同时不利于电池片的薄片化。为了解决上述技术问题，本领域技术人员将正面电极转移到电池背面，开发出无主栅背接触太阳能电池，背接触太阳电池是指电池的发射区电极和基区电极均位于电池背面的一种太阳电池。背接触电池有很多优点：①效率高，由于完全消除了正面栅线电极的遮光损失， 从而提高了电池效率。②可实现电池的薄片化，串联使用的金属连接器件都在电池背面，不存在从正面到背面的连接可以使用更薄的硅片，从而降低成本。③更美观，电池的正面颜色均匀，满足了消费者的审美要求。
背接触太阳电池包括MWT、EWT和IBC等多种结构。背接触太阳电池大规模商业化生产的关键是在于如何高效低成本的将背接触太阳电池串联起来并制作成太阳能组件。MWT组件通常的制备方法是使用复合导电背层材料，在导电背层材料上施加导电胶，在封装材料上对应的位置冲孔使导电胶贯穿封装材料，将背接触太阳电池准确地放置于封装材料上使导电背层材料上的导电点与背接触太阳电池上的电极通过导电胶接触，然后在电池片上铺设上层EVA和玻璃，再将整个层叠好的模组翻转进入层压机进行层压。此工艺存在以下几个缺陷：1、所使用的复合导电背层材料是在背层材料中复合导电金属箔，通常为铜箔，且需要对铜箔进行激光刻蚀或化学腐蚀。由于激光刻蚀对于简单图形尚可操作，对于复杂图案刻蚀速度慢，生产效率低，而化学腐蚀则除了需要预先制备形状复杂且耐腐蚀的掩膜还存在环境污染和腐蚀液对高分子基材的腐蚀。所以此方式制造的导电型背层材料制造工艺复杂，成本极高。2、需要对太阳电池片后层的封装材料进行冲孔以便使导电胶贯穿封装材料，由于封装材料通常是粘弹体，进行精确冲孔难度极大。3、需要精确的点胶设备将导电胶涂覆在背层材料的相应位置，对MWT这种背接触点较少的电池还可以操作，对IBC等背接触点面积小、数量大的背接触电池使用点胶设备根本无法实现。
IBC技术将P-N结放置于电池背面，正面无任何遮挡同时减少了电子收集的距离，因此可大幅度提高电池片效率。IBC电池在正面使用浅扩散、轻掺杂和SiO2钝化层等技术减少复合损失，在电池背面将扩散区限制在较小的区域，这些扩散区在电池背面成点阵排列，扩散区金属接触被限制在很小的范围内呈现 为数量众多的细小接触点。IBC电池减少了电池背面的重扩散区的面积，掺杂区域的饱和暗电流可以大幅减小，开路电压和转换效率得以提高。同时通过数量众多的小接触点收集电流使电流在背表面的传输距离减少，大幅度降低组件的串联内阻。
IBC背接触电池由于具有常规太阳能电池难以达到的高效率而备受业界关注，已经成为新一代太阳能电池技术的研究热点。但现有技术中IBC太阳能电池模块P-N结位置相邻较近且均在电池片背面，难以对IBC电池模块进行串联并制备成组件。为解决上述问题，现有技术也出现了多种对IBC无主栅背接触太阳能电池的改进，Sunpower公司是将相邻的P或N发射极通过银浆丝网印刷细栅线相连最终将电流导流至电池片边缘，在电池片边缘印刷较大的焊点再使用连接带进行焊接串联，目前太阳能领域一直使用丝网印刷技术形成电流的汇流，如最新申请的专利201310260260.8，201310606634.7，201410038687.8，201410115631.8。
专利WO2011143341A2公开了一种无主栅背接触太阳能电池，包括衬底，多个相邻的P掺杂层和N掺杂层位于衬底背面，P掺杂层和N掺杂层与金属接触层层叠，并且P掺杂层和N掺杂层与金属接触层之间设置有钝化层，所述钝化层上具有大量的纳米连接孔，所述纳米连接孔连接P掺杂层和N掺杂层与金属接触层；但该发明利用纳米孔连接金属接触层会使电阻增大，且制造工艺复杂，对制造设备有较高的要求，该发明不能实现将多片太阳能电池与电连接层集成为一个模块。实现电池片集成为太阳能电池模块，不仅方便组装成组件，而且方便于调整模块间的串并联，从而可以方便调整太阳能电池模块中电池片的串并联方式，减小组件的连接电阻。
专利US20110041908 A1公开了一种背面具有细长交叉指状发射极区域和基极区域的背接触式太阳能电池及其生产方法，具有半导体衬底，半导体衬底的背面表面上设有细长基极区域和细长发射极区域，基极区域为基极半导体类型，发射极区域设有与所述基极半导体类型相反的发射极半导体类型；细长发射极区域设有用于电接触发射极区域的细长发射极电极，细长基极区域设有用于电接触基极区域的细长基极电极；其中细长发射极区域具有比细长发射极电极小的结构宽度，并且其中细长基极区域具有比所述细长基极电极小的结构宽度。该发明采用的细长导电件使太阳能电池具有良好的集电性能，但是需要有设置大量的导电件来有效收集电流，因此导致制造成本增加，工艺步骤复杂。
专利EP2709162A1公开了一种太阳能电池，运用于无主栅背接触太阳能电池，公开了彼此分开并交替排列的电极接触单元，通过纵向的连接体连接电极接触单元，形成“工”形电极结构；但是该种结构在电池片上进行了两次连接，第一次是电池片与电极接触单元连接，然后还需要通过连接体连接电极接触单元，两次连接带来了工艺上的复杂性，以及造成过多的电极接触点，可能造成“断连”或者“错连”，不利于无主栅背接触太阳能电池的整体性能。
由于目前该领域的发明使用细栅线进行电流收集，在5寸电池片上尚可使用，但在现有技术中普遍流行的6寸或更大的硅片上就会遇到串联电阻上升和填充因子下降等问题，导致所制造的组件功率严重降低。在现有技术中的IBC电池也可以在相邻的P或N发射极之间丝网印刷比较宽的银浆栅线来降低串联电阻，但由于用银量的增加带来成本的急剧上升，同时宽的栅线也会产生P-N之间的绝缘效果变差，易漏电的问题。
发明内容
本发明的目的在于针对现有技术的不足，提供一种能够有效防止P电极和N电极短路、耐隐裂、高效率、高稳定性的无主栅、高效率背接触太阳能电池模块、组件及制备工艺，同时具有制备工艺简单，成本大大降低的优点。
为达到上述目的，本发明采用的技术方案是：
一种无主栅、高效率背接触太阳能电池模块，该太阳能电池模块包括电池片和电连接层，所述电池片的背光面具有与P型掺杂层连接的P电极和与N型掺杂层连接的N电极，所述电连接层包括平行排列的若干导电线，所述若干导电线分别与所述P电极或者所述N电极电连接。
所述P电极为点状P电极或者线型P电极，所述N电极为点状N电极或者线型N电极。
所述点状P电极的直径为0.4mm～1.5mm，所述同一导电线上连接的两个相邻点状P电极之间的距离为0.7mm～10mm，所述线型P电极的宽度为0.4mm～1.5mm；所述点状N电极的直径为0.4mm～1.5mm，所述同一导电线上连接的两个相邻点状N电极之间的距离为0.7mm～10mm，所述线型N电极的宽度为0.4mm～1.5mm。
所述点状P电极和所述点状N电极的总个数为1000～40000个。
所述点状电极或线型电极为银浆、导电胶、高分子导电材料或焊锡中的任一种。
与所述P电极相连的导电线和与所述N电极相连的导电线之间的距离为0.1mm～20mm。
所述导电线的材料为铜、铝、钢、铜包铝或铜包钢中的任一种或几种组合；所述导电线的横截面形状为圆形、方形或椭圆形中的任一种或几种组合；所述 导电线横截面形状的外接圆直径为0.05mm～1.5mm。
所述导电线表面镀有防氧化镀层材料或涂覆有导电胶。
所述防氧化镀层材料为锡、锡铅合金、、锡铋合金或锡铅银合金中的任一种；导电线的镀层或导电胶层厚度为5μm～50μm。
所述导电胶为低电阻率导电粘接胶，其主要成分为导电粒子和高分子粘接剂。
所述导电胶中的导电粒子为金、银、铜、镀金镍、镀银镍、镀银铜中的任一种或几种组合；所述导电粒子的形状为球形、片状、橄榄状、针状中的任一种或几种组合；导电粒子的粒径为0.01μm～5μm。
所述导电胶中的高分子粘接剂为环氧树脂、聚氨酯树脂、丙烯酸树脂或有机硅树脂中的任一种或两种组合，粘接剂可进行热固化或光固化。
所述导电线的数量为10根～500根。
所述电连接层设置有P汇流条电极和N汇流条电极，所述P汇流条电极和所述N汇流条电极设置于所述电连接层两侧。
所述汇流条电极的表面具有凹凸形状。
所述P电极与所述N电极之间的绝缘层处设置有热塑性树脂或热固性树脂。
所述树脂为乙烯-醋酸乙烯共聚物、聚烯烃树脂、环氧树脂、聚氨酯树脂、丙烯酸树脂、有机硅树脂中的任一种或两种组合。
一种无主栅、高效率背接触太阳能电池组件，包括由上至下连接的前层材料前层材料、封装材料、太阳能电池层、封装材料、背层材料背层材料，所述太阳能电池层包括若干个太阳能电池模块，所述太阳能电池模块为上述所述的太阳能电池模块，所述相邻的太阳能电池模块通过电连接层两侧的汇流条电连接。
无主栅、高效率背接触太阳能电池组件包含的电池片个数、电池模块个数、电池模块内的电池片个数的数量可由以下公式限定；Z代表电池组件总的电池片个数，Y代表所述电池模块的个数，X代表所述电池模块包含的电池片个数，其中1≤Y≤X≤Z；X×Y＝Z；当X＝1时，一根导电线的长度为一块电池片的长度；当Y＝1时为一体化连接，即一根导电线连接电池组件的所有电池片。
每个太阳能电池模块内的太阳能电池片彼此串联；太阳能电池模块之间依次串联，每个太阳能电池模块内的太阳能电池片的数量相同。
所述太阳电池层的电池片个数为1～120个，其中，包括1～120个电池模块，所述电池模块包括1～120个电池片。
所述汇流条之间通过导电介质连接。
所述导电介质包括银浆、导电胶或焊锡中的任一种。
一种无主栅、高效率背接触太阳能电池组件的制备方法，包括以下步骤：
步骤一：制备太阳能电池模块，将平行排列的若干导电线拉直绷紧，每条导电线分别与电池片背面的P电极和N电极电连接；将所述P汇流条电极和所述N汇流条电极设置于所述电连接层两侧，制备成太阳能电池模块；
步骤二：制备太阳能电池层，将步骤1制备的太阳能电池模块通过汇流条电极电连接，制备成太阳能电池层；
步骤三：依次按前层材料、封装材料、太阳能电池层、封装材料、背层材料的顺序进行层叠，层压得到电池组件。
无主栅、高效率背接触太阳能电池组件的制备方法中，步骤一所述电池片上的P电极和N电极在水平面上具有镜面对称结构，当电池片的数量大于1时，组装电池片的方式为，将第一块电池片与电连接层连接后，将第二块电池片在水平面旋转180°，两片电池片边缘对齐，使第二块电池片上的P电极与第一块 电池片上的N电极在一条导电线上，然后正常放置第三片背接触电池，使第三块电池片上的P电极与第二块电池片的N电极在一条导电线上，重复上述操作形成串联结构，形成太阳能电池层。
无主栅、高效率背接触太阳能电池组件的制备方法，所述步骤一中电池片与导电线的电连接方式为通过丝网印刷在电池片的P型掺杂层和N型掺杂层上涂覆导电胶，所述导电胶在加热过程中可以固化形成P电极和N电极，经加热后使所述导电线同所述P电极或所述N电极通过所述导电胶形成欧姆接触，实现导电线与电池片的电连接；
电池片与导电线的另一种电连接方式为通过在导电线上采用镀层工艺镀低熔点材料，经加热过程后使所述导电线同所述P型掺杂层或所述N型掺杂层通过低熔点材料熔化焊接固定形成P电极和N电极，实现导电线与电池片的电连接，所述低熔点材料为焊锡、锡铅合金、锡铋合金或锡铅银合金中的任一种。
所述的加热过程在电池片正面使用加热垫；所述加热垫的加热温度为40℃～80℃。
所述的加热方式为红外辐射、电阻丝加热或热风加热中的任一种或几种组合，加热温度为150℃～500℃。
所述镀层工艺为热浸镀、电镀或化学镀中的任一种。
由于上述技术方案运用，本发明与现有技术相比具有如下优点：
1、本发明消除了正面栅线电极的遮光损失，从而提高了电池效率；
2、本发明可实现电池的薄片化，串联使用的金属连接器件都在电池背面，消除了过去电池从正面到背面的连接，因而可以使用更薄的硅片，从而降低成本；
3、本发明的背接触太阳电池普遍适用于MWT、EWT和IBC等多种结构，实用性更强；
4、本发明技术生产的组件集成的光伏系统可以彻底避免因一块电池片发生隐裂并损失一定的电流而导致整个组串的电流将发生明显降低的问题，由于此发明所提出的无主栅背排线技术实现了导电体与电池片之间的多点连接，从而使整个系统对生产制造、运输、安装和使用过程中产生的隐裂和微裂具有极高的容忍度，体现出很好的整体性能；
5、本发明中太阳能电池电极与电连接层多点分散式接触，减少电子收集距离，大幅度降低组件的串联电阻；
6、本发明采用无主栅排线技术制备出电连接层，实现电池电子的收集，使得制备工艺更简单，大大降低了太阳能电池的生产成本；
7、本发明所使用背接触太阳能电池无需主栅，大大降低银浆的使用量，使背接触电池的制造成本明显降低；
8、本发明设置汇流条电极凹凸形状的设置可以增大电极的接触面积，减小电阻。
本发明的技术可以实现导电体与电池片之间的焊接，可以大幅度提高组件的长期可靠性。此技术制备的组件中，IBC电池与导电体之间是多点连接，连接点分布更密集，可以达到几千甚至几万个，在硅片隐裂和微裂部位电流传导的路径更加优化，因此由于微裂造成的损失被大大减小，产品的质量提高。通常在光伏系统中，电池片发生隐裂后电池片上部分区域会与主栅发生脱离，此区域产生的电流无法被收集。光伏系统都是采用串联的方式形成矩阵，具有明显的水桶效应，当一片电池片发生隐裂并损失一定的电流时整个组串的电流将发生明显的降低，从而导致整个组串的发电效率大幅度降低。使用该技术生产的组件集成的光伏系统可以完美地避免此类问题发生，由于此发明所提出的无主栅背排线技术实现了导电体与电池片之间的多点连接，使整个光伏系统对生产制造、运输、安装和使用过程中产生的隐裂和微裂痕具有极高的容忍性。可以 用一个简单的例子来说明，传统技术生产的太阳能组件就像是普通的玻璃，一个点被撞碎了整块玻璃就粉碎了，而用无主栅背排线技术生产的组件则像是夹胶安全玻璃，一个点碎裂了外观上看起来不美观了，但是整个玻璃的遮风挡雨的功能还在。此技术突破了传统的电池组串工艺，使电池排布更自由，更紧密，采用上述技术的组件有望更小更轻，对下游项目开发来说，这就意味着安装中更小的占地面积，更低的屋顶承重要求和更低的人力成本。无主栅背排线技术可以解决低成本、高效率的背接触太阳电池的连接问题，通过使用铜线代替银主栅降低成本，实现背接触太阳电池真正的工业化规模生产，在提高效率的同时降低成本，为光伏系统提供效率更高、成本更低、稳定性更高、耐隐裂更出色的光伏组件，大大提升光伏系统与传统能源的竞争力。
本发明所使用无主栅、高效率背接触太阳能电池整体结构与常规的背接触太阳能电池基本一致，但是在背接触太阳能电池完成银浆烧结和功率分档测试后在其发射区电极和基区电极之间的绝缘层处丝网印刷上热塑性或热固性的树脂。此树脂一方面可以起到分离绝缘发射区电极和基区电极的作用，一方面在层压过程中起到粘接背接触太阳能电池片和背层材料的作用。
附图说明
图1点状无主栅、高效率背接触太阳能电池片背面示意图
图2线型无主栅、高效率背接触太阳能电池片背面示意图
图3导电线截面图(图3a，具有两层材料导电线截面图，图3b，具有三层材料导电线截面图)
图4实施例1和2无主栅、高效率背接触太阳能电池模块截面图
图5实施例1和2含有无主栅、高效率背接触太阳能电池模块的太阳能电池组件局部截面图
图6太阳能电池组件的太阳能电池层局部示意图
图7电池串局部示意图
图8实施例1和3电池片模组局部示意图
图9实施例2电池片模组局部示意图
图10实施例3无主栅、高效率背接触太阳能电池模块截面图
图11实施例3含有无主栅、高效率背接触太阳能电池模块的太阳能电池组件局部截面图
1、为铜、铝或钢等金属材料，2、为与1不同的铝或钢等金属材料；3、为锡、锡铅、锡铋或锡铅银金属合金焊料；4、N型掺杂层；41、点状N电极；42、线型N电极区；43、与N电极连接的N导电线；44、线型N电极；5、P型掺杂层；51、点状P电极；52、线型P电极区；53、与P电极连接的P导电线；54、线型P电极；6、N型单晶硅基体；7、绝缘层；8、前层材料；81、背层材料；82、封装材料；9、汇流条电极；91、N汇流条电极；92、P汇流条电极；10、太阳能电池层；101、第一片背接触电池片；102、第二片背接触电池片；103、第三片背接触电池片。
具体实施方式；
实施例1
如图1和4所示，一种无主栅、高效率背接触太阳能电池模块，包括电池片和电连接层，电池片包括N型单晶硅基体6，N型单晶硅基体6背面具有与P型掺杂层5连接的P电极和与N型掺杂层4连接的N电极，P电极与N电极之间的绝缘层7处设置有热塑性树脂或热固性树脂。其中，P电极为点状P电极51，N电极为点状N电极41，点状P电极51和点状N电极41相互交替排列，点状P电极51和点状N电极41的总个数为2080个。点状P电极51的直径为 0.8mm，相邻点状P电极51之间的距离为1.5mm。点状N电极41的直径为0.7mm，相邻点状N电极41之间的距离为1.5mm，点状P电极51连线与点状N电极41连线之间的中心距离为15mm。电极接触点为焊锡材料。电池转化效率为20.2％。
如图5所示，一种包括上述无主栅、高效率背接触太阳能电池模块的太阳能电池组件，包括由上至下连接的前层材料8、太阳能电池层10、背层材料81。如图6所示，太阳能电池层10包括若干个上述太阳能电池模块。
如图8所示，一种包括上述无主栅、高效率背接触太阳能电池模块的太阳能电池组件的制备方法包括以下步骤：
1、制备无主栅、高效率背接触太阳能电池模块：如图7所示，依次将10根154mm长，直径为1.3mm的导电线拉直绷紧，按照第一块背接触电池片101的背面图形，分别用电烙铁将导电线与电池片背面的点状P电极焊接，成为P导电线53；再将10根298mm长的同类型的导电线拉直绷紧，按照第一块背接触电池片101的背面图形，分别用电烙铁将导电线与电池片背面的点状N电极焊接，成为N导电线43。如图3中的3b图所示，导电线为具有三层结构的镀锡金属丝，包括最内层钢丝3直径为0.8mm，中间层的铜层，厚度0.2mm，最外层为镀锡层，厚度0.3mm。镀锡金属丝的横截面为圆形，直径1.3mm。
2、制备电连接层：如图7所示，在上述设置完第一块背接触电池片101的基础上，将第二块背接触电池片102在水平面旋转180°与上述无主栅、高效率背接触太阳能电池模块边缘对齐，使第二片背接触电池片102上的点状P电极51正好处于与第一片背接触电池片101上与点状N电极41焊接的焊接镀锡金属丝的延长上，此时将这些镀锡金属丝焊接在第二片背接触电池片102的点状P电极51上。再将10根298mm长的同类型的镀锡金属丝按照背接触电池的背面图形 焊接于第二片背接触电池片102的点状N电极41上，然后正常放置第三片背接触电池片103，使第三片背接触电池片103上的点状P电极51与第二片背接触电池片102的点状N电极41上焊接的镀锡金属丝的延长线重合并焊接。依次类推形成如图7所示的串联结构。焊接的温度为300～400℃，焊接过程中可在电池片正面使用加热垫以预防电池两面温差过大而造成电池片的破碎或隐裂，加热垫温度控制在40～80℃。如图8所示，将制造完成的如图6所示的串联结构使用8×0.22mm横截面积的常规通用汇流条进行串联，将P导电线53通过P汇流条电极92连接，将N导电线43通过N汇流条91连接，制作出4串，每串8片，共32片背接触的电池片模组。
3、制备无主栅、高效率背接触太阳能电池组件：依次按照前层材料8、封装材料82、太阳能电池层10、封装材料82和背层材料81的顺序进行层叠和外观检查，其中封装材料82为EVA，将层叠后的模组送入层压机进行层压，层压参数根据EVA的流化特性进行设定，通常为145℃下层压16分钟。最后将层压完成的模组进行安装金属边框、安装接线盒并进行功率测试和外观检查。
上述32片背接触组件的功率参数如下：
开路电压  Uoc(V)22.25
短路电流  Isc(A)9.25
工作电压  μmp(V)17.27
工作电流  Imp(A)9.08
最大功率  Pmax(W)156.78
填充因子  76.18％
实施例2
如图1和4所示，一种无主栅、高效率背接触太阳能电池模块，包括电池 片和电连接层，电池片包括N型单晶硅基体6，N型单晶硅基体6背面具有与P型掺杂层5连接的P电极和与N型掺杂层4连接的N电极，P电极与N电极之间设置有绝缘层7，绝缘层7为热塑性树脂或热固性树脂。如图1所示，在P电极为点状P电极51，N电极为点状N电极41，点状P电极51和点状N电极41相互交替排列，点状P电极51和点状N电极41的总个数为24200个。点状P电极51的直径为0.5mm，相邻点状P电极51之间的距离为1.4mm。点状N电极41的直径为0.4mm，相邻点状N电极41之间的距离为1.4mm，点状P电极51连线与点状N电极41连线之间的中心距离为0.7mm。电极接触点为焊锡材料。电池转化效率20.3％。
如图5所示，一种包括上述无主栅、高效率背接触太阳能电池模块的太阳能电池组件，包括由上至下连接的前层材料8、太阳能电池层10、背层材料81，如图6所示，太阳能电池层10包括若干个无主栅、高效率背接触太阳能电池模块。
如图9所示，一种含有上述无主栅、高效率背接触太阳能电池模块的太阳能电池组件的制备方法包括以下步骤：
1、制备无主栅、高效率背接触太阳能电池模块：如图9所示，依次将110根154mm，直径为0.3mm的导电线拉直绷紧，按照第一块背接触电池片101的背面图形，分别用红外光线加热将导电线与电池片背面的点状P电极51焊接，成为P导电线53；再将110根154mm长的同类型的导电线拉直绷紧，按照第一块背接触电池片的背面图形，分别用电烙铁将导电线与电池片背面的点状N电极41焊接，成为N导电线43，制备出电连接层，在电连接层两侧使用5×0.22mm横截面积的常规通用汇流条分别将与点状P电极51连接的导电线通过P汇流条电极92连接，与点状N电极连接的导电线通过N汇流条电极91连接。如图3 中的3a图所示，导电线为具有两层结构的镀锡金属丝，包括内层为铜层，直径0.25mm，外层为镀锡层，厚度0.025mm，锡层合金成分为锡铅60/40，即含有60％的锡和40％的铅。镀锡金属丝的横截面积为圆形，直径0.28mm。
2、制备太阳能电池层10：将10块上述制备出的无主栅、高效率背接触太阳能电池模块边缘对齐排列，使太阳能电池模块的P汇流条电极92与相邻太阳能电池的N汇流条电极91相对齐并通过导电介质连接，导电介质为焊锡，焊接的温度为300～400℃，形成如图9所示的太阳能电池串。依次类推制备出6个无主栅、高效率背接触太阳能电池串，将每串无主栅、高效率背接触太阳能电池模块左右两端的P汇流条电极92进行串联、每串无主栅、高效率背接触太阳能电池模块左右两端的N汇流条电极91进行串联，制备成6串，每串10片，共60片的无主栅、高效率背接触太阳能电池层10。其中所使用的汇流条为8×0.22mm横截面积的常规汇流条。
3、制备太阳能电池组件：依次按照前层材料8、EVA、太阳能电池层10、EVA和背层材料81的顺序进行层叠和外观检查，将层叠后的模组送入层压机进行层压，层压参数根据EVA的流化特性进行设定，通常为145℃下层压16分钟。最后将层压完成的模组进行安装金属边框、安装接线盒并进行功率测试和外观检查。
上述60片背接触组件的功率参数如下：
开路电压  Uoc(V)40.36
短路电流  Isc(A)9.34
工作电压  μmp(V)31.78
工作电流  Imp(A)9.25
最大功率  Pmax(W)293.96
填充因子  77.98％
实施例3
如图2和4所示，一种无主栅、高效率背接触太阳能电池模块，包括电池片和电连接层，电池片包括N型单晶硅基体6，其背面具有P型掺杂层5和N型掺杂层4，其中P型掺杂层5上设有线型P电极区52，N型掺杂层4上设有线型N电极区42，线型P电极区52与线型N电极区42交替排列。线型P电极区52宽度为0.7mm，相邻线型P电极区52之间的距离为1.5mm。线型N电极区42宽度为0.5mm，相邻线型N电极区42之间的距离为1.5mm，线型P电极区52与线型N电极区42之间的中心距离为2.0mm。电池转化效率为20.5％。线型P电极区52与线型N电极区42之间设置有绝缘层7，绝缘层7为热塑性树脂或热固性树脂。电连接层包括平行排列的若干导电线，该若干导电线分别电连接在线型P电极区52或者线型N电极区42，形成线型P电极54或线型N电极44。
如图10所示，一种包括上述无主栅、高效率背接触太阳能电池模块的太阳能电池组件，包括由上至下连接的前层材料8、太阳能电池层10、背层材料81。如图6所示，太阳能电池层10包括若干个无主栅、高效率背接触太阳能电池模块，
如图9所示，一种具有上述无主栅、高效率背接触太阳能电池模块的太阳能电池组件的制备方法包括以下步骤：
1、制备面接触太阳能电池模块：如图7所示，依次将100根154mm长，直径为0.33mm的具有两层结构的镀锡金属丝拉直绷紧，放置于第一片背接触电池片101的线型P电极区上，然后将第二片背接触电池片102在水平面旋转180度，使两片电池片边缘对齐，再将100根298mm长的同类型的镀锡金属丝按照背接 触电池的背面图形放置于第一片背接触电池101的线型N电极区42上，同时这些导电线也必然对应排列在第二片背接触电池片102的线型P电极区上52。正常放置第三片背接触电池片103，使第二片背接触电池片102的线型N电极区42和第三片背接触电池片103的线型P电极区52对齐，并在该线型直线上放置100根298mm长具有两层结构的直径为0.33mm的镀锡金属丝。然后将100根154mm长的具有两层结构的直径为0.33mm的镀锡金属丝放置于第三片背接触电池片103的线型N电极区42上，同时确保本实施例的太阳能电池模块左右两端具有2mm的外延导电线，用于与汇流条的焊接。最后将排列好的三片背接触电池片和镀锡金属丝施加微小的压力并用热风进行加热，使镀锡金属丝上的锡铅焊料融化并与背接触电池片上的电极区欧姆连接，在线型P电极区52上形成线型P电极54，在线型N电极区42上形成线型N电极44，最终形成如图8所示的串联结构，该串联结构为一个太阳能电池模块。热风加热温度为300～400℃。如图3的3a图所示，本实施例的导电线为具有两层结构的镀锡金属丝，包括内层为铜层，直径0.3mm，外层为镀锡层，厚度0.025mm，锡层的合金成分为锡铅60/40，即含有60％的锡和40％的铅。镀锡金属丝的横截面为圆形，直径为0.33mm。
2、制备太阳能电池层10：将上述制备出的3个太阳能电池模块使用4×0.3mm横截面积的常规通用汇流条进行串联，将与线型P电极54连接的P导电线53通过P汇流条电极92连接，将与线型N电极44连接的N导电线43通过N汇流条电极91连接，制备出3串，每串3片，共9片的太阳能电池层10；
3、制备无主栅、高效率背接触太阳能电池组件：依次按照前层材料8、封装材料82、太阳能电池层10、封装材料82和背层材料81的顺序进行层叠和外观检查，其中封装材料82为EVA，将层叠后的模组送入层压机进行层压，层压参数 根据EVA的硫化特性进行设定，通常为145℃下层压16分钟。最后将层压完成的模组进行安装金属边框、安装接线盒并进行功率测试和外观检查。
上述9片背接触组件的功率参数如下：
开路电压  Uoc(V)6.21
短路电流  Isc(A)9.28
工作电压  μmp(V)4.89
工作电流  Imp(A)9.06
最大功率  Pmax(W)44.30
填充因子  76.87％。
由实施例1-3的实验参数可知，由本发明制备的无主栅、高效率背接触太阳能电池模块所构成的太阳能电池组件均可以获得很高的填充因子，从而提高组件的发电效率。能够有效防止P电极和N电极之间的短路、耐隐裂、高效率、高稳定性，同时该技术具有制备工艺简单，成本大大降低的优点。
上述详细说明是针对发明的可行实施例的具体说明，该实施例并非用以限制本发明的专利范围，凡未脱离本发明的等效实施或变更，均应当包含于本发明的专利范围内。
另外，本领域技术人员还可在本发明权利要求公开的范围和精神内做其它形式和细节上的各种修改、添加和替换。当然，这些依据本发明精神所做的各种修改、添加和替换等变化，都应包含在本发明所要求保护的范围之内。

Claims (29)

  1. 无主栅、高效率背接触太阳能电池模块，该太阳能电池模块包括电池片和电连接层，所述电池片的背光面具有与P型掺杂层连接的P电极和与N型掺杂层连接的N电极，其特征在于：所述电连接层包括平行排列的若干导电线，所述若干导电线分别与所述P电极或者所述N电极电连接。
  2. 根据权利要求1所述的无主栅、高效率背接触太阳能电池模块，其特征在于：所述P电极为点状P电极或者线型P电极，所述N电极为点状N电极或者线型N电极。
  3. 根据权利要求2所述的无主栅、高效率背接触太阳能电池模块，其特征在于：所述点状P电极的直径为0.4mm～1.5mm，所述同一导电线上连接的两个相邻点状P电极之间的距离为0.7mm～10mm，所述线型P电极的宽度为0.4mm～1.5mm；所述点状N电极的直径为0.4mm～1.5mm，所述同一导电线上连接的两个相邻点状N电极之间的距离为0.7mm～10mm，所述线型N电极的宽度为0.4mm～1.5mm。
  4. 根据权利要求2所述的无主栅、高效率背接触太阳能电池模块，其特征在于：所述点状P电极和所述点状N电极的总个数为1000～40000个。
  5. 根据权利要求2所述的无主栅、高效率背接触太阳能电池模块，其特征在于：所述点状电极或线型电极为银浆、导电胶、高分子导电材料或焊锡中的任一种。
  6. 根据权利要求1所述的无主栅、高效率背接触太阳能电池模块，其特征在于：与所述P电极相连的导电线和与所述N电极相连的导电线之间的距离为0.1mm～20mm。
  7. 根据权利要求1所述的无主栅、高效率背接触太阳能电池模块，其特征在于：所述导电线的材料为铜、铝、钢、铜包铝或铜包钢中的任一种或几种组合；所述导电线的横截面形状为圆形、方形或椭圆形中的任一种或几种组合；所述导电线横截面形状的外接圆直径为0.05mm～1.5mm。
  8. 根据权利要求1所述的无主栅、高效率背接触太阳能电池模块，其特征在于：所述导电线表面镀有防氧化镀层材料或涂覆有导电胶。
  9. 根据权利要求8所述的无主栅、高效率背接触太阳能电池模块，其特征在于：所述防氧化镀层材料为锡、锡铅合金、、锡铋合金或锡铅银合金中的任一种；导电线的镀层或导电胶层厚度为5μm～50μm。
  10. 根据权利要求8所述的无主栅、高效率背接触太阳能电池模块，其特征在于：所述导电胶为低电阻率导电粘接胶，其主要成分为导电粒子和高分子粘接剂。
  11. 根据权利要求10所述的无主栅、高效率背接触太阳能电池模块，其特征在于：所述导电胶中的导电粒子为金、银、铜、镀金镍、镀银镍、镀银铜中的任一种或几种组合；所述导电粒子的形状为球形、片状、橄榄状、针状中的任一种或几种组合；导电粒子的粒径为0.01μm～5μm。
  12. 根据权利要求10所述的无主栅、高效率背接触太阳能电池模块，其特征在于：所述导电胶中的高分子粘接剂为环氧树脂、聚氨酯树脂、丙烯酸树脂或有机硅树脂中的任一种或两种组合，粘接剂可进行热固化或光固化。
  13. 根据权利要求1所述的无主栅、高效率背接触太阳能电池模块，其特征在于：所述导电线的数量为10根～500根。
  14. 根据权利要求1所述的无主栅、高效率背接触太阳能电池模块，其特征在于：所述电连接层设置有P汇流条电极和N汇流条电极，所述P汇流条电极和所述N汇流条电极设置于所述电连接层两侧。
  15. 根据权利要求14所述的无主栅、高效率背接触太阳能电池模块，其特征在于：所述汇流条电极的表面具有凹凸形状。
  16. 根据权利要求1所述的无主栅、高效率背接触太阳能电池模块，其特征在于：所述P电极与所述N电极之间的绝缘层处设置有热塑性树脂或热固性树脂。
  17. 根据权利要求16所述的无主栅、高效率背接触太阳能电池模块，其特征 在于：所述树脂为乙烯-醋酸乙烯共聚物、聚烯烃树脂、环氧树脂、聚氨酯树脂、丙烯酸树脂、有机硅树脂中的任一种或两种组合。
  18. 无主栅、高效率背接触太阳能电池组件，包括由上至下连接的前层材料、封装材料、太阳能电池层、封装材料、背层材料，其特征在于：所述太阳能电池层包括若干个太阳能电池模块，所述太阳能电池模块为权利要求1-17任一项所述的太阳能电池模块，所述相邻的太阳能电池模块通过电连接层两侧的汇流条电连接。
  19. 根据权利要求18所述的无主栅、高效率背接触太阳能电池组件，其特征在于：每个所述太阳能电池模块内的太阳能电池片彼此串联；太阳能电池模块之间依次串联，每个太阳能电池模块内的太阳能电池片的数量相同。
  20. 根据权利要求18所述的无主栅、高效率背接触太阳能电池组件，其特征在于，所述太阳电池层的电池片个数为1～120个，其中，包括1～120个电池模块，所述电池模块包括1～120个电池片。
  21. 根据权利要求18所述的无主栅、高效率背接触太阳能电池组件，其特征在于，所述汇流条之间通过导电介质连接。
  22. 根据权利要求21所述的无主栅、高效率背接触太阳能电池组件，其特征在于，所述导电介质包括银浆、导电胶或焊锡中的任一种。
  23. 无主栅、高效率背接触太阳能电池组件的制备方法，包括以下步骤：
    步骤一：制备太阳能电池模块，将平行排列的若干导电线拉直绷紧，每条导电线分别与电池片背面的P电极和N电极电连接；将所述P汇流条电极和所述N汇流条电极设置于所述电连接层两侧，制备成太阳能电池模块；
    步骤二：制备太阳能电池层，将步骤1制备的太阳能电池模块通过汇流条电极电连接，制备成太阳能电池层；
    步骤三：依次按前层材料、封装材料、太阳能电池层、封装材料、背层材料的顺序进行层叠，层压得到电池组件。
  24. 根据权利要求23所述的无主栅、高效率背接触太阳能电池组件的制备方法，其特征在于，步骤一中所述电池片上的P电极和N电极在水平面上具有镜面对称结构，当电池片的数量大于1时，组装电池片的方式为，将第一块电池片与电连接层连接后，将第二块电池片在水平面旋转180°，两片电池片边缘对齐，使第二块电池片上的P电极与第一块电池片上的N电极在一条导电线上，然后正常放置第三片背接触电池，使第三块电池片上的P电极与第二块电池片的N电极在一条导电线上，重复上述操作形成串联结构，形成太阳能电池层。
  25. 根据权利要求23所述无主栅、高效率背接触太阳能电池组件的制备方法，其特征在于：所述层压的参数根据封装材料的硫化特性进行设定，所述封装材料为EVA，层压参数为145℃下层压16分钟。
  26. 根据权利要求23所述的无主栅、高效率背接触太阳能电池组件的制备方法，其特征在于：所述步骤一中电池片与导电线的电连接方式为通过丝网印刷在电池片的P型掺杂层和N型掺杂层上涂覆导电胶，所述导电胶在加热过程中可以固化形成P电极和N电极，经加热后使所述导电线同所述P电极或所述N电极通过所述导电胶形成欧姆接触，实现导电线与电池片的电连接；
    电池片与导电线的另一种电连接方式为通过在导电线上采用镀层工艺镀低熔点材料，经加热过程后使所述导电线同所述P型掺杂层或所述N型掺杂层通过低熔点材料熔化焊接固定形成P电极和N电极，实现导电线与电池片的电连接，所述低熔点材料为焊锡、锡铅合金、锡铋合金或锡铅银合金中的任一种。
  27. 根据权利要求26所述的无主栅、高效率背接触太阳能电池组件的制备方法，其特征在于：所述的加热过程在电池片正面使用加热垫；所述加热垫的加热温度为40℃～80℃。
  28. 根据权利要求26所述的无主栅、高效率背接触太阳能电池组件的制备方法，其特征在于：所述的加热方式为红外辐射、电阻丝加热或热风加热中的任一种或几种组合，加热温度为150℃～500℃。
  29. 根据权利要求26所述无主栅、高效率背接触太阳能电池组件的制备方法，其特征在于：所述镀层工艺为热浸镀、电镀或化学镀中的任一种。
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