WO2015136403A1 - Electronic apparatus - Google Patents

Abstract

Provided is an electronic apparatus with excellent portability. Also provided is an electronic apparatus having outstanding perspicuity. Provided is an electronic apparatus in which a display having a light-emitting element is formed on a flexible film, and a hinge is rotated to fold the display, making the display more compact. With the electronic apparatus in its compacted state, the display is provided so as to enclose the housing, and is configured so as to have regions which can display on the front, side and rear surfaces of the electronic apparatus. The display can also be unfolded.

Description

Electronics

One embodiment of the present invention relates to a display device. In particular, the present invention relates to a flexible display device that can be bent. One embodiment of the present invention relates to an electronic device including the display device.

Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, the technical field of one embodiment of the present invention disclosed in this specification more specifically includes a semiconductor device, a display device, a light-emitting device, a lighting device, a power storage device, a memory device, a driving method thereof, or a driving method thereof. A manufacturing method can be mentioned as an example.

In recent years, display devices are expected to be applied to various uses and are being diversified. For example, display devices used for portable electronic devices and the like are required to be thin, lightweight, or difficult to break. In addition, there is a demand for new uses that have not been achieved in the past.

Patent Document 1 discloses a flexible active matrix light-emitting device including a transistor or an organic EL element as a switching element on a film substrate.

JP 2003-174153 A

In recent years, it has been studied to increase the amount of information to be displayed by increasing the display area of a display device and to improve the display listing. On the other hand, in a portable device application, when the display device is enlarged, portability (also referred to as portability) is lowered. For this reason, it has been difficult to achieve both improved display listing and high portability.

An object of one embodiment of the present invention is to provide an electronic device with excellent portability. Another object is to provide an electronic device with excellent listability. Another object is to provide a highly reliable electronic device. Another object is to provide a novel display device or an electronic device.

Note that the description of these problems does not disturb the existence of other problems. In one embodiment of the present invention, it is not necessary to solve all of these problems. Problems other than those described above are naturally clarified from the description of the specification and the like, and problems other than the above can be extracted from the description of the specification and the like.

One embodiment of the present invention includes a display portion having a light-emitting element over a flexible film, a first support fixed to the central portion of the display portion, two hinges at both ends of the first support, The second support body and the third support body sandwiching the first support body, and the second support body have a first cover portion that hides the end portion of the display portion, and the second support body is This is an electronic device in which the angle formed with the first support is changed by the rotation of the hinge, the end portion hidden by the first cover portion is exposed, and the area of the display portion is increased.

In the above configuration, the width a of the end portion hidden by the first cover portion is wider than the product of the curvature radii r and π in the region where the display portion is bent by the rotation of the hinge of the second support. In the electronic device disclosed in this specification, display portions are provided on the front surface, the side surface, and the back surface, and the total thickness can be reduced to about twice the radius of curvature r. Therefore, when the thickness of the electronic device is reduced, it is preferable to reduce the curvature radius r, and the curvature radius r is 10 mm or less, preferably 5 mm or less.

In the above configuration, the flexible film has a mechanism that slides with the surface of the second support by the rotation of the hinge. Further, the flexible film has a mechanism that slides with the surface of the third support by the rotation of the other hinge.

In addition, another configuration includes a display unit having a light emitting element on a flexible film, a first support fixed to the center of the display unit, two hinges at both ends of the first support, The second support body and the third support body sandwiching the first support body, and the second support body have a first cover portion that overlaps the first end portion of the display portion, and third The support body has a second cover portion that overlaps with the second end portion of the display portion, and the angle of the second support body and the first support body changes by rotation of the hinge, and the display overlaps with the hinge. A part of the part is bent, the area of the first end of the display unit overlapping the first cover part is reduced, and the angle of the third support and the first support is changed by the rotation of the hinge, A part of the display part overlapping with the hinge is bent, and the area of the second end of the display part overlapping with the second cover part is reduced. That is an electronic device.

In addition, a configuration in which the display portion is bent and miniaturized by rotating the hinge is also one of the features, and the configuration includes a first region, a second region adjacent to the first region, An electronic device including a display unit having a third region adjacent to the first region, a fourth region adjacent to the second region, and a fifth region adjacent to the third region, The display unit is formed on the same flexible film, the second region is a first side surface of the electronic device, the third region is a second side surface of the electronic device, and the fourth region is , The first region overlaps with the first region, the fifth region overlaps with the first region, and the fourth region and the fifth region do not overlap with each other.

In a state where the electronic device is miniaturized, the display portion is provided so as to wrap the housing, and has a structure having displayable areas on the front surface, side surface, and back surface of the electronic device. In addition, the display unit can be expanded.

An electronic device with excellent portability can be provided. Alternatively, an electronic device with excellent listability can be provided. Alternatively, a highly reliable electronic device can be provided. Alternatively, a novel display device can be provided. Alternatively, an electronic device can be provided. Note that the description of these effects does not disturb the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. It should be noted that the effects other than these are naturally obvious from the description of the specification, drawings, claims, etc., and it is possible to extract the other effects from the descriptions of the specification, drawings, claims, etc. It is.

1 is a perspective view illustrating one embodiment of the present invention. 1 is a perspective view illustrating one embodiment of the present invention. 1 is a cross-sectional view illustrating one embodiment of the present invention. 4A and 4B are a plan view and a cross-sectional view illustrating one embodiment of the present invention. FIG. 6 illustrates an example of a light-emitting panel according to an embodiment. FIG. 6 illustrates an example of a light-emitting panel according to an embodiment. The figure which shows an example of the touchscreen based on Embodiment. The figure which shows an example of the touchscreen based on Embodiment. The figure which shows an example of the touchscreen based on Embodiment. FIG. 4 is a projection view illustrating a structure of an input / output device according to an embodiment. FIG. 6 is a cross-sectional view illustrating a structure of an input / output device according to an embodiment. The figure explaining the structure and the drive method of the detection circuit 19 and converter CONV which concern on embodiment.

Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below.

Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated. In addition, in the case where the same function is indicated, the hatch pattern is the same, and there is a case where no reference numeral is given.

Note that in each drawing described in this specification, the size, the layer thickness, or the region of each component is exaggerated for simplicity in some cases. Therefore, it is not necessarily limited to the scale.

In the present specification and the like, ordinal numbers such as “first” and “second” are used for avoiding confusion between components, and are not limited numerically.

In this specification and the like, the A plane being parallel to the B plane refers to a state where the angle formed by the normal of the A plane and the normal of the B plane is −20 ° to 20 °. Further, in this specification and the like, the C plane being perpendicular to the B plane refers to a state where the angle formed by the normal line of the C plane and the normal line of the B plane is 70 ° or greater and 110 ° or less. Further, in this specification and the like, the C line being perpendicular to the B plane refers to a state where the angle formed by the normal of the C line and the B plane is -20 ° or more and 20 ° or less. Further, in this specification and the like, the C line being parallel to the B plane refers to a state in which the angle formed by the normal of the C line and the B plane is 70 ° or more and 110 ° or less.

(Embodiment 1)
In this embodiment, structural examples of electronic devices of one embodiment of the present invention will be described with reference to drawings.

FIG. 1A is a perspective view illustrating a part (a display panel, a support, and a hinge) of a configuration of the electronic device 200 shown in this configuration example. The electronic device 200 includes a display unit 201, a support body 202a, a support body 202b, a support body 202c, a hinge 203a, and a hinge 203b.

The support 202a and the support 202b are connected by a hinge 203a. The support body 202a and the support body 202b can be relatively rotated about the rotation shaft 211a of the hinge 203a. In the configuration example shown in FIG. 1A, the support body 202a and the support body 202b can be rotated at an angle of 90 ° or more around the rotation shaft 211a from a horizontal state.

Here, the rotation axis 211a of the hinge 203a is a straight line that coincides with the rotation axis of the rotation mechanism of the hinge 203a. For example, as shown in FIG. 1B, when the hinge 203a has a mechanism that rotates around a shaft 211c of a tangible object (for example, a mandrel), a straight line that coincides with the extension direction of the shaft is defined as the rotation shaft 211a. To do. FIG. 1A is a perspective view from the display surface side, whereas FIG. 1B is a perspective view from the opposite side to the display surface.

The support body 202a and the support body 202c are connected by a hinge 203b. The support body 202a and the support body 202c can be rotated relatively around the rotation shaft 211b of the hinge 203b. In the configuration example shown in FIG. 1A, the support 202a and the support 202c can be rotated at an angle of 90 ° or more about the rotation shaft 211b from a horizontal state.

The display unit 201 has a display surface on which an image or the like visually recognized by the user is displayed. In this specification and the like, the display surface refers to a surface on the side of the display panel where an image or the like is displayed.

At least part of the display portion 201 has flexibility. Therefore, it is possible to reversibly deform the display unit 201 from a state in which the display surface is a flat surface to a state having a curved surface. The display unit 201 only needs to have at least flexibility in a portion that is deformed in accordance with a change in the relative position of the two supports, and the other portion may not have flexibility.

A part of the display unit 201 is supported by the support 202b and is fixed. On the other hand, the display unit 201 is a frame that is supported by the support body 202a and the support body 202c but is not fixed and has cover portions 202d and 202e that overlap with the periphery of the display panel. The cover portions 202d and 202e serve to hide a part of the display area, a display drive circuit, a connection portion with the FPC, and the like.

The electronic device 200 of one embodiment of the present invention has a structure in which a flexible display portion 201 is supported by three supports. The display unit 201 can be modified such as bending. For example, the display unit 201 can be bent at two locations so that the display surface is outside the curved surface. When it is bent near the rotating shaft 211a, the support 202a and the display unit 201 slide. Further, when the rotating shaft 211b is bent, the support 202c and the display unit 201 slide. By using such a support method, for example, the display unit 201 is flattened, that is, the display unit 201 is reduced in size by bending at two locations on the display unit from FIG. 2C, that is, FIG. When the display unit 201 is relatively rotated, an aberration generated in the display unit 201 is compensated by a sliding operation, and the display unit 201 can be prevented from being damaged. Further, as shown in FIG. 2B, the display portion 201 can be miniaturized by bending it at two locations. The electronic device 200 of one embodiment of the present invention has excellent portability when the display portion 201 is folded as illustrated in FIG. 2A, and is seamless when expanded as illustrated in FIG. Excellent display listing due to wide display area.

FIGS. 2A, 2 </ b> B, and 2 </ b> C are also perspective views illustrating a part of the configuration (display panel, support, hinge) of the electronic device 200 shown in this configuration example. In FIGS. 2A, 2B, and 2C, the hinge is illustrated so that each configuration is easy to understand. However, the design of the electronic device 200 is prioritized so that it is difficult to see. You may store a hinge in a housing | casing. FIG. 2B is a perspective view when viewed from the side opposite to the main display surface in a folded state. In order to maintain the state shown in FIG. 2B, the support 202a and the support 202c may be brought into contact with each other and fixed to each other with a magnet or the like.

Moreover, when fixing the display part 201 and each support body, the method of adhering, the method of fixing with a screw etc., the method of pinching the display part 201 between members, etc., etc. are mentioned, for example.

FIG. 3A is a schematic cross-sectional view of the electronic device 200 when deployed. FIG. 3B is a schematic cross-sectional view in a state where the display unit 201 of the electronic device is bent and miniaturized at two locations. In addition, although the hinge is illustrated large so that each configuration can be easily understood, in FIG. 3B, the radius of curvature r is 5 mm or less and is sufficiently small with respect to the width L.

A first area of the display unit 201 that overlaps the housing 207 of the electronic device 200 and overlaps the support body 202b is a main display area, and a portion having a width L of the first area is not bent.

In the display unit 201, there are two portions (second regions) to be bent, and the width of each second region is πr. Moreover, the width | variety of the area | region (3rd area | region) which can be bent and can be located in the back surface side of a 1st area | region is the width | variety D, respectively, It is an area | region which is not fixed and slides.

Moreover, the width | variety of the 4th area | region which overlaps with the cover parts 202d and 202e of the support bodies 202a and 202c is the width a, respectively. The width a has a relationship of formula a> πr. As shown in FIGS. 3A and 3B, since there is a fourth region hidden by the cover portions 202d and 202e of the supports 202a and 202c, the display portion 201 shown in FIG. The exposed area becomes larger than that during deployment.

FIG. 4 (A) shows the relationship between the widths of the respective regions when expanded. The width a part of the fourth area can also be a displayable area, and the display overlaps with the cover parts 202d and 202e when unfolded, but the display cannot be seen, but is used as a display area on the back side when the display part is folded. You can also. A peripheral line of one flexible film on which a display portion or the like is formed is indicated by a chain line 209. As shown in FIG. 4A, the periphery of the flexible film is designed to be hidden by the cover portions 202d and 202e and the frame portions 202f and 202g. The frame parts 202f and 202g may be constituted by a part of the supports 202a, 202b and 202c, or may be provided separately. An interval W between the frame part 202f and the frame part 202g is determined as the length of one side of the display part 201. When the electronic device is unfolded, the display area of the display unit 201 has a rectangular shape with one side being W and the other side being (L + 2πr + 2D). For example, when the aspect ratio of the display area is 9:16, W: (L + 2πr + 2D) may be set to 9:16 at the time of development. In addition, when the electronic device hinge is rotated to reduce the size, the area of the display area is a rectangular first area with one side being W and the other side being L, and a curved surface adjacent to the first area. , The total area of the two second regions having one side of W and the other side of πr and the two third regions having one side of W and the other side of D.

FIG. 4B is a schematic cross-sectional view of the electronic device cut along the shaft 211c and the rotation shaft 211a.

Various sensors including a battery, a printed wiring board on which various ICs such as an image processing circuit, an arithmetic device, and a driving circuit are mounted, a wireless receiver, a wireless transmitter, a wireless power receiver, an acceleration sensor, etc. By appropriately incorporating these electronic components, the electronic device 200 can function as a portable terminal, a portable image reproducing device, a portable lighting device, or the like. The housing 207 may incorporate a camera, a speaker, various input / output terminals including a power supply terminal and a signal supply terminal, various sensors including an optical sensor, operation buttons, and the like.

The thickness of the display portion 201 is 5 μm or more and 2000 μm or less, preferably 5 μm or more and 1000 μm or less, more preferably 10 μm or more and 500 μm or less, and further preferably 20 mm or more and 300 μm or less. The thinner the display unit 201, the smaller the allowable radius of curvature can be made, and the electronic device 200 can be made thinner.

When the display unit 201 is too thin and mechanical strength is insufficient, a flexible sheet or the like may be attached to at least a curved portion of the display unit 201 to supplement the strength. For example, in addition to elastic bodies such as hard rubber, metals such as plastic and aluminum, alloys such as stainless steel and titanium alloys, rubber such as silicone rubber, and the like can be used. It is preferable to use a material having lower flexibility than the display portion 201 for the sheet. Further, in the case where the sheet does not have translucency, the sheet may be disposed on the back surface side of the display unit 201 or in an area outside the display surface. A sheet having an opening in a portion overlapping with the display surface may be disposed on the display surface side, and the display panel may be sandwiched between the two sheets.

In a state where the two supports are folded, that is, in a state where the curved portion of the display unit 201 is curved with the smallest curvature radius, the curvature radius r is 0.1 mm or more and 20 mm or less, preferably 0.5 mm or more and 15 mm or less, More preferably, it is set to 1 mm or more and 10 mm or less, and typically, it is preferable to set to 4 mm or less.

Here, the curvature radius r in the curved portion of the display unit 201 is the smallest value among the curvature radii of the curved display surface.

(Embodiment 2)
In this embodiment, a structural example and a manufacturing method example of a light-emitting panel that can be used for the display panel included in the electronic device of one embodiment of the present invention will be described.

<Specific example 1>
FIG. 5A is a plan view of the light-emitting panel, and FIG. 5C illustrates an example of a cross-sectional view taken along the dashed-dotted line A1-A2 in FIG. The light-emitting panel shown in Example 1 is a top emission type light-emitting panel using a color filter method. In the present embodiment, the light-emitting panel includes, for example, a configuration in which one color is expressed by three subpixels of R (red), G (green), and B (blue), or R (red) and G (green). ), B (blue), W (white), etc., a configuration in which one color is expressed by four sub-pixels can be applied. The color element is not particularly limited, and colors other than RGBW may be used. For example, the color element may be composed of yellow, cyan, magenta, or the like.

A light-emitting panel illustrated in FIG. 5A includes a light-emitting portion 804, a driver circuit portion 806, and an FPC (Flexible Printed Circuit) 808. Light-emitting elements and transistors included in the light-emitting portion 804 and the driver circuit portion 806 are sealed with a substrate 801, a substrate 803, and a sealing layer 823.

5C includes a substrate 801, an adhesive layer 811, an insulating layer 813, a plurality of transistors, a conductive layer 857, an insulating layer 815, an insulating layer 817, a plurality of light-emitting elements, an insulating layer 821, and a sealing layer. 823, an overcoat 849, a coloring layer 845, a light-blocking layer 847, an insulating layer 843, an adhesive layer 841, and a substrate 803. The sealing layer 823, the overcoat 849, the insulating layer 843, the adhesive layer 841, and the substrate 803 transmit visible light.

The light-emitting portion 804 includes a transistor 820 and a light-emitting element 830 over a substrate 801 with an adhesive layer 811 and an insulating layer 813 interposed therebetween. The light-emitting element 830 includes a lower electrode 831 over the insulating layer 817, an EL layer 833 over the lower electrode 831, and an upper electrode 835 over the EL layer 833. The lower electrode 831 is electrically connected to the source electrode or the drain electrode of the transistor 820. An end portion of the lower electrode 831 is covered with an insulating layer 821. The lower electrode 831 preferably reflects visible light. The upper electrode 835 transmits visible light.

In addition, the light-emitting portion 804 includes a colored layer 845 that overlaps with the light-emitting element 830 and a light-blocking layer 847 that overlaps with the insulating layer 821. The coloring layer 845 and the light shielding layer 847 are covered with an overcoat 849. A space between the light emitting element 830 and the overcoat 849 is filled with a sealing layer 823.

The insulating layer 815 has an effect of suppressing diffusion of impurities into a semiconductor included in the transistor. As the insulating layer 817, an insulating layer having a planarization function is preferably selected in order to reduce surface unevenness due to the transistor.

The driver circuit portion 806 includes a plurality of transistors over the substrate 801 with the adhesive layer 811 and the insulating layer 813 interposed therebetween. FIG. 5C illustrates one of the transistors included in the driver circuit portion 806.

The insulating layer 813 and the substrate 801 are attached to each other with an adhesive layer 811. The insulating layer 843 and the substrate 803 are attached to each other with an adhesive layer 841. It is preferable to use a film with low water permeability for the insulating layer 813 and the insulating layer 843 because impurities such as water can be prevented from entering the light-emitting element 830 and the transistor 820 and the reliability of the light-emitting panel is improved.

The conductive layer 857 is electrically connected to an external input terminal that transmits an external signal (a video signal, a clock signal, a start signal, a reset signal, or the like) or a potential to the driver circuit portion 806. Here, an example in which an FPC 808 is provided as an external input terminal is shown. In order to prevent an increase in the number of steps, the conductive layer 857 is preferably formed using the same material and the same steps as the electrodes and wirings used for the light-emitting portion and the driver circuit portion. Here, an example in which the conductive layer 857 is manufactured using the same material and the same process as the electrode included in the transistor 820 is described.

In the light-emitting panel illustrated in FIG. 5C, the connection body 825 is located on the substrate 803. The connection body 825 is connected to the conductive layer 857 through an opening provided in the substrate 803, the adhesive layer 841, the insulating layer 843, the sealing layer 823, the insulating layer 817, and the insulating layer 815. Further, the connection body 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connection body 825. In the case where the conductive layer 857 and the substrate 803 overlap with each other, the conductive layer 857, the connection body 825, and the FPC 808 can be electrically connected by opening the substrate 803 (or using a substrate having an opening). .

In Example 1, the insulating layer 813, the transistor 820, and the light-emitting element 830 are manufactured over a manufacturing substrate with high heat resistance, the manufacturing substrate is peeled off, and the insulating layer 813 or the transistor 820 is formed over the substrate 801 with the use of the adhesive layer 811. The light emitting panel which can be produced by transposing the light emitting element 830 is shown. In Example 1, the insulating layer 843, the colored layer 845, and the light-blocking layer 847 are formed over a manufacturing substrate with high heat resistance, the manufacturing substrate is peeled off, and the insulating layer 843 is formed over the substrate 803 with the use of the adhesive layer 841. 1 shows a light-emitting panel that can be manufactured by transposing a colored layer 845 and a light-shielding layer 847.

In the case where a material with low heat resistance (such as a resin) is used for the substrate, it is difficult to apply a high temperature to the substrate in a manufacturing process, and thus there are limitations on conditions for forming a transistor or an insulating layer over the substrate. In the case where a material with high water permeability (such as a resin) is used for the substrate, it is preferable to form a film with low water permeability by applying high temperature. In the manufacturing method of this embodiment, a transistor or the like can be manufactured over a manufacturing substrate with high heat resistance; therefore, a highly reliable transistor or a film with sufficiently low water permeability can be formed by applying high temperature. Then, by transferring them to the substrate 801 or the substrate 803, a highly reliable light-emitting panel can be manufactured. Accordingly, in one embodiment of the present invention, a light-emitting panel that is lightweight or thin and has high reliability can be realized. Details of the manufacturing method will be described later.

<Specific example 2>
FIG. 5B is a plan view of the light-emitting panel, and FIG. 5D illustrates an example of a cross-sectional view taken along dashed-dotted line A3-A4 in FIG. The light emitting panel shown in the specific example 2 is a top emission type light emitting panel using a color filter method, which is different from the specific example 1. Here, only the points different from the specific example 1 will be described in detail, and the description of the points common to the specific example 1 will be omitted.

The light-emitting panel illustrated in FIG. 5D is different from the light-emitting panel illustrated in FIG.

The light-emitting panel illustrated in FIG. 5D includes a spacer 827 over the insulating layer 821. By providing the spacer 827, the distance between the substrate 801 and the substrate 803 can be adjusted.

In the light-emitting panel illustrated in FIG. 5D, the sizes of the substrate 801 and the substrate 803 are different. The connection body 825 is located on the insulating layer 843 and does not overlap with the substrate 803. The connection body 825 is connected to the conductive layer 857 through an opening provided in the insulating layer 843, the sealing layer 823, the insulating layer 817, and the insulating layer 815. Since there is no need to provide an opening in the substrate 803, the material of the substrate 803 is not limited.

<Specific example 3>
FIG. 6A is a plan view of the light-emitting panel, and FIG. 6C illustrates an example of a cross-sectional view taken along dashed-dotted line A5-A6 in FIG. The light-emitting panel shown in the third specific example is a top emission type light-emitting panel using a painting method.

A light-emitting panel illustrated in FIG. 6A includes a light-emitting portion 804, a driver circuit portion 806, and an FPC 808. Light-emitting elements and transistors included in the light-emitting portion 804 and the driver circuit portion 806 are sealed with a substrate 801, a substrate 803, a frame-shaped sealing layer 824, and a sealing layer 823.

A light-emitting panel illustrated in FIG. 6C includes a substrate 801, an adhesive layer 811, an insulating layer 813, a plurality of transistors, a conductive layer 857, an insulating layer 815, an insulating layer 817, a plurality of light-emitting elements, an insulating layer 821, and a sealing layer. 823, a frame-shaped sealing layer 824, and a substrate 803. The sealing layer 823 and the substrate 803 transmit visible light.

The frame-shaped sealing layer 824 is preferably a layer having a higher gas barrier property than the sealing layer 823. Thereby, it can suppress that a water | moisture content and oxygen penetrate | invade into a light emission panel from the outside. Therefore, a highly reliable light-emitting panel can be realized. Further, the sealing layer 824 and the sealing layer 823 have a waterproof and dustproof effect.

In Specific Example 3, light emitted from the light-emitting element 830 is extracted from the light-emitting panel through the sealing layer 823. Therefore, the sealing layer 823 preferably has higher translucency than the frame-shaped sealing layer 824. In addition, the sealing layer 823 preferably has a higher refractive index than the frame-shaped sealing layer 824. In addition, the sealing layer 823 preferably has a smaller volumetric shrinkage during curing than the frame-shaped sealing layer 824.

The light-emitting portion 804 includes a transistor 820 and a light-emitting element 830 over a substrate 801 with an adhesive layer 811 and an insulating layer 813 interposed therebetween. The light-emitting element 830 includes a lower electrode 831 over the insulating layer 817, an EL layer 833 over the lower electrode 831, and an upper electrode 835 over the EL layer 833. The lower electrode 831 is electrically connected to the source electrode or the drain electrode of the transistor 820. An end portion of the lower electrode 831 is covered with an insulating layer 821. The lower electrode 831 preferably reflects visible light. The upper electrode 835 transmits visible light.

The driver circuit portion 806 includes a plurality of transistors over the substrate 801 with the adhesive layer 811 and the insulating layer 813 interposed therebetween. FIG. 6C illustrates one transistor among the transistors included in the driver circuit portion 806.

The insulating layer 813 and the substrate 801 are attached to each other with an adhesive layer 811. It is preferable to use a film with low water permeability for the insulating layer 813 because impurities such as water can be prevented from entering the light-emitting element 830 and the transistor 820 and the reliability of the light-emitting panel can be improved.

The conductive layer 857 is electrically connected to an external input terminal that transmits an external signal or potential to the driver circuit portion 806. Here, an example in which an FPC 808 is provided as an external input terminal is shown. Here, an example in which the conductive layer 857 is manufactured using the same material and the same process as the electrode included in the transistor 820 is described.

In the light-emitting panel illustrated in FIG. 6C, the connection body 825 is located on the substrate 803. The connection body 825 is connected to the conductive layer 857 through an opening provided in the substrate 803, the sealing layer 823, the insulating layer 817, and the insulating layer 815. Further, the connection body 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connection body 825.

In Example 3, the insulating layer 813, the transistor 820, and the light-emitting element 830 are manufactured over a manufacturing substrate with high heat resistance, the manufacturing substrate is peeled off, and the insulating layer 813 and the transistor 820 are formed over the substrate 801 with the use of the adhesive layer 811. The light emitting panel which can be produced by transposing the light emitting element 830 is shown. Since a transistor or the like can be manufactured over a manufacturing substrate with high heat resistance, a highly reliable transistor or a film with sufficiently low water permeability can be formed by applying high temperature. Then, by transferring them to the substrate 801, a highly reliable light-emitting panel can be manufactured. Accordingly, in one embodiment of the present invention, a light-emitting panel that is lightweight or thin and has high reliability can be realized.

<Specific Example 4>
FIG. 6B is a plan view of the light-emitting panel, and FIG. 6D illustrates an example of a cross-sectional view taken along dashed-dotted line A7-A8 in FIG. 6B. The light-emitting panel shown in Example 4 is a bottom emission type light-emitting panel using a color filter method.

A light-emitting panel illustrated in FIG. 6D includes a substrate 801, an adhesive layer 811, an insulating layer 813, a plurality of transistors, a conductive layer 857, an insulating layer 815, a coloring layer 845, an insulating layer 817a, an insulating layer 817b, a conductive layer 816, The light-emitting element includes a plurality of light-emitting elements, an insulating layer 821, a sealing layer 823, and a substrate 803. The substrate 801, the adhesive layer 811, the insulating layer 813, the insulating layer 815, the insulating layer 817a, and the insulating layer 817b transmit visible light.

The light-emitting portion 804 includes a transistor 820, a transistor 822, and a light-emitting element 830 over a substrate 801 with an adhesive layer 811 and an insulating layer 813 interposed therebetween. The light-emitting element 830 includes a lower electrode 831 over the insulating layer 817, an EL layer 833 over the lower electrode 831, and an upper electrode 835 over the EL layer 833. The lower electrode 831 is electrically connected to the source electrode or the drain electrode of the transistor 820. An end portion of the lower electrode 831 is covered with an insulating layer 821. The upper electrode 835 preferably reflects visible light. The lower electrode 831 transmits visible light. There is no particular limitation on the position at which the colored layer 845 which overlaps with the light-emitting element 830, and for example, the colored layer 845 may be provided between the insulating layer 817a and the insulating layer 817b or between the insulating layer 815 and the insulating layer 817a.

The driver circuit portion 806 includes a plurality of transistors over the substrate 801 with the adhesive layer 811 and the insulating layer 813 interposed therebetween. In FIG. 6C, two transistors among the transistors included in the driver circuit portion 806 are illustrated.

The insulating layer 813 and the substrate 801 are attached to each other with an adhesive layer 811. It is preferable to use a film with low water permeability for the insulating layer 813 because impurities such as water can be prevented from entering the light-emitting element 830 and the transistors 820 and 822 and the reliability of the light-emitting panel is improved.

The conductive layer 857 is electrically connected to an external input terminal that transmits an external signal or potential to the driver circuit portion 806. Here, an example in which an FPC 808 is provided as an external input terminal is shown. Here, an example in which the conductive layer 857 is manufactured using the same material and the same process as the conductive layer 816 is described.

In Example 4, the insulating layer 813, the transistor 820, the light-emitting element 830, and the like are manufactured over a manufacturing substrate with high heat resistance, the manufacturing substrate is peeled off, and the insulating layer 813 or the transistor is formed over the substrate 801 with the use of the adhesive layer 811. A light-emitting panel that can be manufactured by transposing 820, the light-emitting element 830, and the like is shown. Since a transistor or the like can be manufactured over a manufacturing substrate with high heat resistance, a highly reliable transistor or a film with sufficiently low water permeability can be formed by applying high temperature. Then, by transferring them to the substrate 801, a highly reliable light-emitting panel can be manufactured. Accordingly, in one embodiment of the present invention, a light-emitting panel that is lightweight or thin and has high reliability can be realized.

<Specific Example 5>
FIG. 6E illustrates an example of a light-emitting panel that is different from the specific example 1, the specific example 2, the specific example 3, and the specific example 4.

A light-emitting panel illustrated in FIG. 6E includes a substrate 801, an adhesive layer 811, an insulating layer 813, a conductive layer 814, a conductive layer 857a, a conductive layer 857b, a light-emitting element 830, an insulating layer 821, a sealing layer 823, and a substrate 803. Have

The conductive layers 857a and 857b are external connection electrodes of the light-emitting panel and can be electrically connected to an FPC or the like.

The light-emitting element 830 includes a lower electrode 831, an EL layer 833, and an upper electrode 835. An end portion of the lower electrode 831 is covered with an insulating layer 821. The light-emitting element 830 is a bottom emission type, a top emission type, or a dual emission type. The electrode, substrate, insulating layer, and the like on the light extraction side each transmit visible light. The conductive layer 814 is electrically connected to the lower electrode 831.

The substrate on the light extraction side may have a hemispherical lens, a microlens array, a film with a concavo-convex structure, a light diffusion film, or the like as the light extraction structure. For example, the light extraction structure can be formed by adhering the lens or film on a resin substrate using an adhesive having a refractive index comparable to that of the substrate or the lens or film.

The conductive layer 814 is not necessarily provided, but is preferably provided because a voltage drop due to the resistance of the lower electrode 831 can be suppressed. For the same purpose, a conductive layer electrically connected to the upper electrode 835 may be provided over the insulating layer 821, the EL layer 833, the upper electrode 835, or the like.

The conductive layer 814 is a single layer or a stacked layer using a material selected from copper, titanium, tantalum, tungsten, molybdenum, chromium, neodymium, scandium, nickel, aluminum, or an alloy material containing these as a main component. Can be formed. The film thickness of the conductive layer 814 can be, for example, 0.1 μm to 3 μm, and preferably 0.1 μm to 0.5 μm.

When a paste (silver paste or the like) is used as a material for the conductive layer electrically connected to the upper electrode 835, the metal constituting the conductive layer becomes granular and aggregates. Therefore, the surface of the conductive layer is rough and there are many gaps, and it is difficult for the EL layer 833 to completely cover the conductive layer, and it is easy to make an electrical connection between the upper electrode and the conductive layer. .

In Example 5, the insulating layer 813, the light-emitting element 830, and the like are manufactured over a manufacturing substrate with high heat resistance, the manufacturing substrate is peeled off, and the insulating layer 813, the light-emitting element 830, and the like are formed over the substrate 801 using the adhesive layer 811. The light emitting panel which can be produced by transposing is shown. A highly reliable light-emitting panel can be manufactured by forming an insulating layer 813 or the like with sufficiently low water permeability on a manufacturing substrate with high heat resistance and transferring it to the substrate 801. Accordingly, in one embodiment of the present invention, a light-emitting panel that is lightweight or thin and has high reliability can be realized.

(Embodiment 3)
In this embodiment, a structure of a foldable touch panel that can be used for the display panel included in the electronic device of one embodiment of the present invention will be described with reference to FIGS.

<Structure Example 1> FIG. 7A is a top view of a touch panel. FIG. 7B is a cross-sectional view taken along the dashed-dotted line AB in FIG. 7A and between the dashed-dotted line CD. FIG. 7C is a cross-sectional view taken along one-dot chain line E-F in FIG.

As shown in FIG. 7A, the touch panel 390 includes a display portion 301.

The display unit 301 includes a plurality of pixels 302 and a plurality of imaging pixels 308. The imaging pixel 308 can detect a finger or the like that touches the display unit 301. Accordingly, a touch sensor can be configured using the imaging pixel 308.

The pixel 302 includes a plurality of subpixels (for example, the subpixel 302R), and the subpixel includes a light emitting element and a pixel circuit that can supply power for driving the light emitting element.

The pixel circuit is electrically connected to a wiring that can supply a selection signal and a wiring that can supply an image signal.

The touch panel 390 includes a scanning line driver circuit 303g (1) that can supply a selection signal to the pixel 302 and an image signal line driver circuit 303s (1) that can supply an image signal to the pixel 302.

The imaging pixel 308 includes a photoelectric conversion element and an imaging pixel circuit that drives the photoelectric conversion element.

The imaging pixel circuit is electrically connected to a wiring that can supply a control signal and a wiring that can supply a power supply potential.

As the control signal, for example, a signal that can select an imaging pixel circuit that reads a recorded imaging signal, a signal that can initialize the imaging pixel circuit, and a time that the imaging pixel circuit detects light are determined. Signals that can be used.

The touch panel 390 includes an imaging pixel driving circuit 303g (2) that can supply a control signal to the imaging pixel 308, and an imaging signal line driving circuit 303s (2) that reads the imaging signal.

As illustrated in FIG. 7B, the touch panel 390 includes a substrate 510 and a substrate 570 that faces the substrate 510.

A flexible material can be preferably used for the substrate 510 and the substrate 570.

A material in which transmission of impurities is suppressed can be preferably used for the substrate 510 and the substrate 570. For example, a material having a water vapor permeability of 10 ⁻⁵ g / m ² · day or less, preferably 10 ⁻⁶ g / m ² · day or less can be suitably used.

A material having approximately the same linear expansion coefficient can be preferably used for the substrate 510 and the substrate 570. For example, a material having a linear expansion coefficient of 1 × 10 ⁻³ / K or less, preferably 5 × 10 ⁻⁵ / K or less, more preferably 1 × 10 ⁻⁵ / K or less can be suitably used.

The substrate 510 is a stacked body in which a base material 510b, an insulating layer 510a that prevents diffusion of impurities into the light-emitting element, and an adhesive layer 510c that bonds the base material 510b and the insulating layer 510a are stacked.

The substrate 570 is a stacked body of a flexible substrate 570b, an insulating layer 570a that prevents diffusion of impurities into the light-emitting element, and an adhesive layer 570c that bonds the flexible substrate 570b and the insulating layer 570a.

For example, a material containing polyester, polyolefin, polyamide (nylon, aramid, or the like), polyimide, polycarbonate, or a resin having an acrylic, urethane, epoxy, or siloxane bond can be used for the adhesive layer.

The sealing layer 560 bonds the substrate 570 and the substrate 510 together. The sealing layer 560 has a higher refractive index than air. In the case where light is extracted to the sealing layer 560 side, the sealing layer 560 has a function of optical bonding. The pixel circuit and the light-emitting element (eg, the first light-emitting element 350R) are between the substrate 510 and the substrate 570.

The pixel 302 includes a sub-pixel 302R, a sub-pixel 302G, and a sub-pixel 302B (FIG. 7C). The subpixel 302R includes a light emitting module 380R, the subpixel 302G includes a light emitting module 380G, and the subpixel 302B includes a light emitting module 380B.

For example, the sub-pixel 302R includes a pixel circuit including a first light-emitting element 350R and a transistor 302t that can supply power to the first light-emitting element 350R (FIG. 7B). The light emitting module 380R includes a first light emitting element 350R and an optical element (for example, a colored layer 367R).

The light-emitting element 350R includes a first lower electrode 351R, an upper electrode 352, and an EL layer 353 between the lower electrode 351R and the upper electrode 352 (FIG. 7C).

The EL layer 353 includes a first EL layer 353a, a second EL layer 353b, and an intermediate layer 354 between the first EL layer 353a and the second EL layer 353b.

The light emitting module 380R includes the first colored layer 367R on the substrate 570. The colored layer may be any layer that transmits light having a specific wavelength. For example, a layer that selectively transmits light exhibiting red, green, blue, or the like can be used. Or you may provide the area | region which permeate | transmits the light which a light emitting element emits as it is.

For example, the light-emitting module 380R includes a sealing layer 360 that is in contact with the first light-emitting element 350R and the first colored layer 367R.

The first colored layer 367R is positioned so as to overlap with the first light-emitting element 350R. Accordingly, part of the light emitted from the light emitting element 350R passes through the sealing layer 360 and the first colored layer 367R having an optical bonding function, and is outside the light emitting module 380R as indicated by arrows in the drawing. It is injected.

The touch panel 390 includes a light shielding layer 367BM on the substrate 570. The light shielding layer 367BM is provided so as to surround the colored layer (for example, the first colored layer 367R).

The touch panel 390 includes an antireflection layer 367p at a position overlapping the display unit 301. For example, a circularly polarizing plate can be used as the antireflection layer 367p.

The touch panel 390 includes an insulating layer 321. The insulating layer 321 covers the transistor 302t. Note that the insulating layer 321 can be used as a layer for planarizing unevenness caused by the pixel circuit. An insulating layer in which layers capable of suppressing diffusion of impurities to the transistor 302t and the like are stacked can be applied to the insulating layer 321.

The touch panel 390 includes a light-emitting element (eg, the first light-emitting element 350R) over the insulating layer 321.

The touch panel 390 includes a partition 328 over the insulating layer 321 that overlaps with an end portion of the first lower electrode 351R. In addition, a spacer 329 for controlling the distance between the substrate 510 and the substrate 570 is provided over the partition 328.

The image signal line driver circuit 303s (1) includes a transistor 303t and a capacitor 303c. Note that the driver circuit can be formed over the same substrate in the same process as the pixel circuit. As illustrated in FIG. 7B, the transistor 303t may include the second gate 304 over the insulating layer 321. The second gate 304 may be electrically connected to the gate of the transistor 303t, or a different potential may be applied thereto. If necessary, the second gate 304 may be provided in the transistor 308t, the transistor 302t, or the like.

The imaging pixel 308 includes a photoelectric conversion element 308p and an imaging pixel circuit for detecting light irradiated on the photoelectric conversion element 308p. The imaging pixel circuit includes a transistor 308t.

For example, a pin-type photodiode can be used for the photoelectric conversion element 308p.

The touch panel 390 includes a wiring 311 that can supply a signal, and a terminal 319 is provided in the wiring 311. Note that an FPC 309 (1) that can supply a signal such as an image signal and a synchronization signal is electrically connected to the terminal 319. Note that a printed wiring board (PWB) may be attached to the FPC 309 (1).

A transistor formed in the same process can be used as a transistor such as the transistor 302t, the transistor 303t, and the transistor 308t.

In addition to the gate, source, and drain of the transistor, materials that can be used for various wirings and electrodes constituting the touch panel include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or A single metal such as tungsten, or an alloy containing this as a main component is used as a single layer structure or a laminated structure. For example, a single layer structure of an aluminum film containing silicon, a two layer structure in which an aluminum film is stacked on a titanium film, a two layer structure in which an aluminum film is stacked on a tungsten film, and a copper film on a copper-magnesium-aluminum alloy film Two-layer structure to be laminated, two-layer structure to laminate a copper film on a titanium film, two-layer structure to laminate a copper film on a tungsten film, a titanium film or a titanium nitride film, and an overlay on the titanium film or the titanium nitride film A three-layer structure in which an aluminum film or a copper film is laminated, and a titanium film or a titanium nitride film is further formed thereon, a molybdenum film or a molybdenum nitride film, and an aluminum film or a copper layer stacked on the molybdenum film or the molybdenum nitride film There is a three-layer structure in which films are stacked and a molybdenum film or a molybdenum nitride film is further formed thereon. Note that a transparent conductive material containing indium oxide, tin oxide, or zinc oxide may be used. Further, it is preferable to use copper containing manganese because the controllability of the shape by etching is increased.

<Configuration Example 2> FIGS. 8A and 8B are perspective views of the touch panel 505. Note that representative components are shown for clarity. FIG. 9 is a cross-sectional view taken along alternate long and short dash line X1-X2 in FIG.

The touch panel 505 includes a display portion 501 and a touch sensor 595 (FIG. 8B). The touch panel 505 includes a substrate 510, a substrate 570, and a substrate 590. Note that the substrate 510, the substrate 570, and the substrate 590 are all flexible.

The display portion 501 includes a substrate 510, a plurality of pixels on the substrate 510, and a plurality of wirings 511 that can supply signals to the pixels. The plurality of wirings 511 are routed to the outer peripheral portion of the substrate 510, and a part of them constitutes a terminal 519. A terminal 519 is electrically connected to the FPC 509 (1).

The substrate 590 includes a touch sensor 595 and a plurality of wirings 598 that are electrically connected to the touch sensor 595. The plurality of wirings 598 are routed around the outer periphery of the substrate 590, and a part thereof constitutes a terminal. The terminal is electrically connected to the FPC 509 (2). Note that in FIG. 8B, for the sake of clarity, electrodes, wirings, and the like of the touch sensor 595 provided on the back surface side (substrate 510 side) of the substrate 590 are indicated by solid lines.

As the touch sensor 595, for example, a capacitive touch sensor can be applied. Examples of the electrostatic capacity method include a surface electrostatic capacity method and a projection electrostatic capacity method.

As the projected capacitance method, there are mainly a self-capacitance method and a mutual capacitance method due to a difference in driving method. The mutual capacitance method is preferable because simultaneous multipoint detection is possible.

Hereinafter, a case where a projected capacitive touch sensor is used will be described with reference to FIG.

Note that various sensors that can detect the proximity or contact of a detection target such as a finger can be applied.

The projected capacitive touch sensor 595 includes an electrode 591 and an electrode 592. The electrode 591 is electrically connected to any one of the plurality of wirings 598, and the electrode 592 is electrically connected to any one of the plurality of wirings 598.

As shown in FIGS. 8A and 8B, the electrode 592 has a shape in which a plurality of quadrilaterals repeatedly arranged in one direction are connected at corners.

The electrode 591 has a quadrangular shape, and is repeatedly arranged in a direction intersecting with the direction in which the electrode 592 extends.

The wiring 594 electrically connects two electrodes 591 sandwiching the electrode 592. At this time, a shape in which the area of the intersection of the electrode 592 and the wiring 594 is as small as possible is preferable. Thereby, the area of the area | region in which the electrode is not provided can be reduced, and the nonuniformity of the transmittance | permeability can be reduced. As a result, luminance unevenness of light transmitted through the touch sensor 595 can be reduced.

Note that the shapes of the electrode 591 and the electrode 592 are not limited thereto, and various shapes can be employed. For example, a plurality of electrodes 591 may be arranged so as not to have a gap as much as possible, and a plurality of electrodes 592 may be provided with an insulating layer interposed therebetween so that a region that does not overlap with the electrode 591 is formed. At this time, it is preferable to provide a dummy electrode electrically insulated from two adjacent electrodes 592 because the area of a region having different transmittance can be reduced.

The touch sensor 595 includes a substrate 590, electrodes 591 and 592 that are arranged in a staggered manner on the substrate 590, an insulating layer 593 that covers the electrodes 591 and 592, and wiring 594 that electrically connects adjacent electrodes 591.

The adhesive layer 597 bonds the substrate 590 to the substrate 570 so that the touch sensor 595 overlaps the display portion 501.

The electrodes 591 and 592 are formed using a light-transmitting conductive material. As the light-transmitting conductive material, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added can be used. Note that a film containing graphene can also be used. The film containing graphene can be formed, for example, by reducing a film containing graphene oxide formed in a film shape. Examples of the reduction method include a method of applying heat.

A conductive material having a light-transmitting property is formed over the substrate 590 by a sputtering method, and then unnecessary portions are removed by various patterning techniques such as a photolithography method to form the electrode 591 and the electrode 592. it can.

As a material used for the insulating layer 593, for example, an inorganic insulating material such as silicon oxide, silicon oxynitride, or aluminum oxide can be used in addition to a resin such as acrylic or epoxy, a resin having a siloxane bond.

An opening reaching the electrode 591 is provided in the insulating layer 593, and the wiring 594 electrically connects the adjacent electrodes 591. A light-transmitting conductive material can be used for the wiring 594 because it can increase the aperture ratio of the touch panel. A material having higher conductivity than the electrodes 591 and 592 can be preferably used for the wiring 594 because electric resistance can be reduced.

One electrode 592 extends in one direction, and a plurality of electrodes 592 are provided in stripes.

The wiring 594 is provided so as to cross the electrode 592.

A pair of electrodes 591 is provided with one electrode 592 interposed therebetween, and a wiring 594 electrically connects the pair of electrodes 591.

Note that the plurality of electrodes 591 are not necessarily arranged in a direction orthogonal to the one electrode 592, and may be arranged at an angle of less than 90 degrees.

One wiring 598 is electrically connected to the electrode 591 or the electrode 592. Part of the wiring 598 functions as a terminal. As the wiring 598, for example, a metal material such as aluminum, gold, platinum, silver, nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or an alloy material including the metal material is used. it can.

Note that an insulating layer that covers the insulating layer 593 and the wiring 594 can be provided to protect the touch sensor 595.

In addition, the connection layer 599 electrically connects the wiring 598 and the FPC 509 (2).

As the connection layer 599, various anisotropic conductive films (ACF: Anisotropic Conductive Film), anisotropic conductive pastes (ACP: Anisotropic Conductive Paste), or the like can be used.

The adhesive layer 597 has a light-transmitting property. For example, a thermosetting resin or an ultraviolet curable resin can be used, and specifically, a resin such as acrylic, urethane, epoxy, or a resin having a siloxane bond can be used.

The display unit 501 includes a plurality of pixels arranged in a matrix. The pixel includes a display element and a pixel circuit that drives the display element.

In this embodiment, the case where an organic EL element that emits white light is applied to a display element will be described; however, the display element is not limited to this. A display device using a liquid crystal display element, electronic ink, an electronic powder fluid (registered trademark), or an electrophoretic element instead of the organic EL element may be used.

For example, organic EL elements having different emission colors may be applied to each sub-pixel so that the color of light emitted from each sub-pixel is different.

The substrate 510, the substrate 570, and the sealing layer 560 can have the same structure as that of the structure example 1.

The pixel includes a sub-pixel 502R, and the sub-pixel 502R includes a light emitting module 580R.

The sub-pixel 502R includes a pixel circuit including a first light-emitting element 550R and a transistor 502t that can supply power to the first light-emitting element 550R. The light emitting module 580R includes a first light emitting element 550R and an optical element (for example, a colored layer 567R).

The light-emitting element 550R includes a lower electrode, an upper electrode, and an EL layer between the lower electrode and the upper electrode.

The light emitting module 580R includes the first colored layer 567R in the direction in which light is extracted.

In the case where the sealing layer 560 is provided on the light extraction side, the sealing layer 560 is in contact with the first light-emitting element 550R and the first colored layer 567R.

The first colored layer 567R is positioned so as to overlap with the first light-emitting element 550R. Thus, part of the light emitted from the light emitting element 550R passes through the first colored layer 567R and is emitted to the outside of the light emitting module 580R in the direction of the arrow shown in the drawing.

The display portion 501 includes a light shielding layer 567BM in a direction in which light is emitted. The light-blocking layer 567BM is provided so as to surround the colored layer (for example, the first colored layer 567R).

The display portion 501 includes an antireflection layer 567p at a position overlapping the pixel. As the antireflection layer 567p, for example, a circularly polarizing plate can be used.

The display unit 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. Note that the insulating film 521 can be used as a layer for planarizing unevenness caused by the pixel circuit. In addition, a stacked film including a layer that can suppress diffusion of impurities can be applied to the insulating film 521. Accordingly, a decrease in reliability of the transistor 502t and the like due to impurity diffusion can be suppressed.

The display portion 501 includes a light-emitting element (eg, the first light-emitting element 550R) over the insulating film 521.

The display portion 501 includes a partition wall 528 over the insulating film 521 that overlaps with an end portion of the first lower electrode. In addition, a spacer for controlling the distance between the substrate 510 and the substrate 570 is provided over the partition wall 528.

The scan line driver circuit 503g (1) includes a transistor 503t and a capacitor 503c. Note that the driver circuit can be formed over the same substrate in the same process as the pixel circuit.

The display portion 501 includes a wiring 511 that can supply a signal, and a terminal 519 is provided in the wiring 511. Note that an FPC 509 (1) that can supply a signal such as an image signal and a synchronization signal is electrically connected to the terminal 519.

Note that a printed wiring board (PWB) may be attached to the FPC 509 (1).

The display portion 501 includes wiring such as scanning lines, signal lines, and power supply lines. The various conductive films described above can be used for the wiring.

Note that various transistors can be applied to the display portion 501. A structure in the case where a bottom-gate transistor is applied to the display portion 501 is illustrated in FIGS.

For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, or the like can be applied to the transistor 502t and the transistor 503t illustrated in FIG.

For example, a semiconductor layer containing polycrystalline silicon crystallized by a process such as laser annealing can be applied to the transistor 502t and the transistor 503t illustrated in FIG.

A structure in the case where a top-gate transistor is applied to the display portion 501 is illustrated in FIG.

For example, a semiconductor layer including a single crystal silicon film or the like transferred from a polycrystalline silicon or a single crystal silicon substrate can be applied to the transistor 502t and the transistor 503t illustrated in FIG.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 4)
In this embodiment, the structure of the input / output device of one embodiment of the present invention is described with reference to FIGS.

FIG. 10 is a projection view illustrating the structure of the input / output device of one embodiment of the present invention.

10A is a projection view of the input / output device 500 of one embodiment of the present invention, and FIG. 10B is a projection view illustrating the structure of the detection unit 20U included in the input / output device 500.

FIG. 11 is a cross-sectional view illustrating a structure of an input / output device 500 of one embodiment of the present invention.

FIG. 11A is a cross-sectional view taken along Z1-Z2 of the input / output device 500 of one embodiment of the present invention illustrated in FIG.

Note that the input / output device 500 can also be referred to as a touch panel.

<Configuration Example of Input / Output Device 1. The input / output device 500 described in this embodiment includes a plurality of detection units 20U that include a window portion 14 that transmits visible light and is arranged in a matrix, in the row direction (indicated by an arrow R in the drawing). A scanning line G1 electrically connected to the plurality of detection units 20U arranged in the signal line DL, a signal line DL electrically connected to the plurality of detection units 20U arranged in the column direction (indicated by an arrow C in the figure), and A flexible input device 100 including a flexible first base material 16 that supports the detection unit 20U, the scanning line G1, and the signal line DL, and a plurality of windows that overlap the window portion 14 and are arranged in a matrix. A display portion 501 including a pixel 502 and a flexible second substrate 510 that supports the pixel 502 (see FIGS. 10A to 10C).

The detection unit 20U includes a detection element C that overlaps the window 14 and a detection circuit 19 that is electrically connected to the detection element C (see FIG. 10B).

The sensing element C includes an insulating layer 23, a first electrode 21 and a second electrode 22 that sandwich the insulating layer 23 (see FIG. 11A).

The detection circuit 19 is supplied with the selection signal and supplies the detection signal DATA based on the change in the capacitance of the detection element C.

The scanning line G1 can supply a selection signal, the signal line DL can supply a detection signal DATA, and the detection circuit 19 is disposed so as to overlap the gaps of the plurality of window portions 14.

In addition, the input / output device 500 described in this embodiment includes a colored layer between the detection unit 20U and the pixel 502 that overlaps the window portion 14 of the detection unit 20U.

The input / output device 500 described in this embodiment can include a flexible input device 100 including a plurality of detection units 20U including a window portion 14 that transmits visible light, and a plurality of pixels 502 that overlap the window portion 14. And a flexible display portion 501, and includes a colored layer between the window portion 14 and the pixel 502.

Thereby, the input / output device can supply the detection signal based on the change of the capacity and the position information of the detection unit that supplies the detection signal, display the image information associated with the position information of the detection unit, and bend it. . As a result, a novel input / output device that is highly convenient or reliable can be provided.

Further, the input / output device 500 may include an FPC 1 that is supplied with a signal supplied from the input device 100 and / or an FPC 2 that supplies a signal including image information to the display unit 501.

Further, a protective layer 17p that prevents the occurrence of scratches and protects the input / output device 500 and / or an antireflection layer 567p that weakens the intensity of external light reflected by the input / output device 500 may be provided.

Further, the input / output device 500 includes a scan line driver circuit 503g that supplies a selection signal to the scan line of the display portion 501, a wiring 511 that supplies a signal, and a terminal 519 that is electrically connected to the FPC2.

Hereinafter, individual elements constituting the input / output device 500 will be described. Note that these configurations cannot be clearly separated, and one configuration may serve as another configuration or may include a part of another configuration.

For example, the input device 100 including a colored layer at a position overlapping the plurality of window portions 14 is not only the input device 100 but also a color filter.

For example, the input / output device 500 in which the input device 100 is superimposed on the display unit 501 is not only the input device 100 but also the display unit 501.

The input / output device 500 includes the input device 100 and a display portion 501 (see FIG. 10A).

The input device 100 includes a plurality of detection units 20U and a flexible base 16 that supports the detection units. For example, a plurality of detection units 20U are arranged on the flexible base 16 in a matrix of 40 rows and 15 columns.

The window part 14 transmits visible light.

A colored layer that transmits light of a predetermined color is provided at a position overlapping the window portion 14. For example, a colored layer CFB that transmits blue light, a colored layer CFG that transmits green light, or a colored layer CFR that transmits red light is provided (see FIG. 10B).

In addition to blue, green, and / or red, a colored layer that transmits light of various colors such as a colored layer that transmits white light or a colored layer that transmits yellow light can be provided.

A metal material, a pigment, a dye, or the like can be used for the colored layer.

A light-shielding layer BM is provided so as to surround the window portion 14. The light shielding layer BM is less likely to transmit light than the window portion 14.

Carbon black, a metal oxide, a composite oxide containing a solid solution of a plurality of metal oxides, or the like can be used for the light-shielding layer BM.

The scanning line G1, the signal line DL, the wiring VPI, the wiring RES and the wiring VRES, and the detection circuit 19 are provided at a position overlapping the light shielding layer BM.

Note that a light-transmitting overcoat layer covering the colored layer and the light-shielding layer BM can be provided.

The sensing element C includes a first electrode 21, a second electrode 22, and an insulating layer 23 between the first electrode 21 and the second electrode 22 (see FIG. 11A).

The first electrode 21 is formed in, for example, an island shape so as to be separated from other regions. In particular, a configuration in which a layer that can be manufactured in the same process as the first electrode 21 is disposed close to the first electrode 21 so that the user of the input / output device 500 cannot identify the first electrode 21. Is preferred. More preferably, the number of the window portions 14 arranged in the gap between the first electrode 21 and the layer arranged close to the first electrode 21 is as small as possible. In particular, a configuration in which the window portion 14 is not disposed in the gap is preferable.

A second electrode 22 is provided so as to overlap with the first electrode 21, and an insulating layer 23 is provided between the first electrode 21 and the second electrode 22.

For example, when the first electrode 21 or the second electrode 22 of the sensing element C placed in the atmosphere approaches a substance having a dielectric constant different from that of the atmosphere, the capacitance of the sensing element C changes. Specifically, when a finger or the like approaches the detection element C, the capacitance of the detection element C changes. Thereby, it can be used for a proximity detector.

For example, the capacitance of the sensing element C that can be deformed changes with the deformation.

Specifically, when the distance between the first electrode 21 and the second electrode 22 is reduced by touching the detection element C with a finger or the like, the capacitance of the detection element C increases. Thereby, it can be used for a contact detector.

Specifically, the distance between the first electrode 21 and the second electrode 22 is narrowed by bending the sensing element C. Thereby, the capacity | capacitance of the detection element C becomes large. Thereby, it can be used for a bending detector.

The first electrode 21 and the second electrode 22 include a conductive material.

For example, an inorganic conductive material, an organic conductive material, a metal, a conductive ceramic, or the like can be used for the first electrode 21 and the second electrode 22.

Specifically, a metal element selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, tungsten, nickel, silver or manganese, an alloy containing the above metal element as a component, or an alloy combining the above metal element, etc. Can be used.

Alternatively, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added can be used.

Alternatively, graphene or graphite can be used. The film containing graphene can be formed, for example, by reducing a film containing graphene oxide formed in a film shape. Examples of the reduction method include a method of applying heat and a method of using a reducing agent.

Alternatively, a conductive polymer can be used.

The detection circuit 19 includes transistors M1 to M3, for example. The detection circuit 19 includes a wiring for supplying a power supply potential and a signal. For example, the wiring VPI, the wiring CS, the scanning line G1, the wiring RES, the wiring VRES, the signal line DL, and the like are included. The specific configuration of the detection circuit 19 will be described in detail in the fifth embodiment.

Note that the detection circuit 19 may be arranged in a region that does not overlap the window portion 14. For example, by arranging the wiring in a region that does not overlap with the window portion 14, it is possible to easily see what is on the other side from one side of the detection unit 20U.

For example, transistors that can be formed in the same process can be used as the transistors M1 to M3.

The transistor M1 has a semiconductor layer. For example, a Group 4 element, a compound semiconductor, or an oxide semiconductor can be used for the semiconductor layer. Specifically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, an oxide semiconductor containing indium, or the like can be used.

Note that the structure of a transistor in which an oxide semiconductor is used for a semiconductor layer is described in detail in Embodiment 5.

A conductive material can be applied to the wiring.

For example, an inorganic conductive material, an organic conductive material, a metal, a conductive ceramic, or the like can be used for the wiring. Specifically, the same material as that which can be used for the first electrode 21 and the second electrode 22 can be used.

A metal material such as aluminum, gold, platinum, silver, nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or an alloy material containing the metal material is used as the scan line G1, the signal line DL, and the wiring VPI. The wiring RES and the wiring VRES can be used.

The detection circuit 19 may be formed on the substrate 16 by processing the film formed on the substrate 16.

Alternatively, the detection circuit 19 formed on another base material may be transferred to the base material 16.

Note that a method for manufacturing the detection circuit will be described in detail in Embodiment 5.

An organic material, an inorganic material, or a composite material of an organic material and an inorganic material can be used for the flexible substrate 16.

A material having a thickness of 5 μm to 2500 μm, preferably 5 μm to 680 μm, more preferably 5 μm to 170 μm, more preferably 5 μm to 45 μm, more preferably 5 μm to 45 μm, more preferably 8 μm to 25 μm. Can be used for the substrate 16.

Further, a material in which the permeation of impurities is suppressed can be suitably used for the base material 16. For example, a material having a water vapor permeability of 10 ⁻⁵ g / m ² · day or less, preferably 10 ⁻⁶ g / m ² · day or less can be suitably used.

Further, a material having approximately the same linear expansion coefficient can be suitably used for the substrate 16. For example, a material having a linear expansion coefficient of 1 × 10 ⁻³ / K or less, preferably 5 × 10 ⁻⁵ / K or less, more preferably 1 × 10 ⁻⁵ / K or less can be suitably used.

For example, an organic material such as a resin, a resin film, or a plastic film can be used for the substrate 16.

For example, an inorganic material such as a metal plate or a thin glass plate having a thickness of 10 μm to 50 μm can be used for the substrate 16.

For example, a composite material formed by bonding a metal plate, a thin glass plate, or an inorganic material film to a resin film or the like using a resin layer can be used for the substrate 16.

For example, a composite material in which a fibrous or particulate metal, glass, or inorganic material is dispersed in a resin or a resin film can be used for the substrate 16.

For example, a thermosetting resin or an ultraviolet curable resin can be used for the resin layer.

Specifically, a resin film or a resin plate such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or acrylic resin can be used.

Specifically, alkali-free glass, soda-lime glass, potash glass, crystal glass, or the like can be used.

Specifically, a metal oxide film, a metal nitride film, a metal oxynitride film, or the like can be used. For example, silicon oxide, silicon nitride, silicon oxynitride, an alumina film, or the like can be applied.

Specifically, SUS or aluminum provided with an opening can be used.

Specifically, a resin such as an acrylic resin, a urethane resin, an epoxy resin, or a resin having a siloxane bond can be used.

For example, a laminate in which a flexible base material 16b, a barrier film 16a that prevents diffusion of impurities, and a resin layer 16c that bonds the base material 16b and the barrier film 16a are laminated is suitably used as the base material 16. It can be used (see FIG. 11A).

Specifically, a film including a stacked material in which a 600 nm silicon oxynitride film and a 200 nm thick silicon nitride film are stacked can be used for the barrier film 16a.

Specifically, a silicon oxynitride film having a thickness of 600 nm, a silicon nitride film having a thickness of 200 nm, a silicon oxynitride film having a thickness of 200 nm, a silicon nitride oxide film having a thickness of 140 nm, and a silicon oxynitride film having a thickness of 100 nm are formed. A film including a stacked material that is sequentially stacked can be used for the barrier film 16a.

A resin film such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or acrylic resin, a resin plate, a laminate, or the like can be used for the base material 16b.

For example, polyester, polyolefin, polyamide (nylon, aramid, etc.), polyimide, polycarbonate, or a material containing a resin having an acrylic, urethane, epoxy, or siloxane bond can be used for the resin layer 16c.

A flexible protective substrate 17 and / or a protective layer 17p can be provided. The flexible protective base material 17 or the protective layer 17p protects the input device 100 by preventing generation of scratches.

For example, a resin film such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or acrylic resin, a resin plate, a laminate, or the like can be used for the protective substrate 17.

For example, a hard coat layer or a ceramic coat layer can be used for the protective layer 17p. Specifically, a layer containing a UV curable resin or aluminum oxide may be formed at a position overlapping the second electrode 22.

The display portion 501 includes a plurality of pixels 502 arranged in a matrix (see FIG. 10C).

For example, the pixel 502 includes a subpixel 502B, a subpixel 502G, and a subpixel 502R, and each subpixel includes a display element and a pixel circuit that drives the display element.

Note that the sub-pixel 502B of the pixel 502 is disposed at a position overlapping with the coloring layer CFB, the sub-pixel 502G is disposed at a position overlapping with the coloring layer CFG, and the sub-pixel 502R is disposed at a position overlapping with the coloring layer CFR.

In this embodiment, the case where an organic electroluminescence element that emits white light is applied to a display element is described; however, the display element is not limited thereto.

For example, organic electroluminescence elements having different emission colors may be applied to each sub-pixel so that the color of light emitted from each sub-pixel is different.

In the display portion, an active matrix method in which an active element is included in a pixel or a passive matrix method in which an active element is not included in a pixel can be used.

In the active matrix system, not only transistors but also various active elements (active elements and nonlinear elements) can be used as active elements (active elements and nonlinear elements). For example, MIM (Metal Insulator Metal) or TFD (Thin Film Diode) can also be used. Since these elements have few manufacturing steps, manufacturing cost can be reduced or yield can be improved. Alternatively, since these elements have small element sizes, the aperture ratio can be improved, and power consumption and luminance can be increased.

As a method other than the active matrix method, a passive matrix type that does not use an active element (an active element or a non-linear element) can be used. Since no active element (active element or non-linear element) is used, the number of manufacturing steps is small, so that manufacturing costs can be reduced or yield can be improved. Alternatively, since an active element (an active element or a non-linear element) is not used, an aperture ratio can be improved, power consumption can be reduced, or luminance can be increased.

A flexible material can be used for the substrate 510. For example, a material that can be used for the base material 16 can be applied to the substrate 510.

For example, a stacked body in which a flexible base material 510b, an insulating layer 510a that prevents diffusion of impurities, and an adhesive layer 510c that bonds the base material 510b and the insulating layer 510a are stacked is preferably used for the substrate 510. (See FIG. 11A).

The sealing layer 560 bonds the base material 16 and the substrate 510 together. The sealing layer 560 has a higher refractive index than air. In the case where light is extracted to the sealing layer 560 side, the sealing layer 560 has a function of optical bonding.

The pixel circuit and the light emitting element (for example, the light emitting element 550 </ b> R) are between the substrate 510 and the base material 16.

The subpixel 502R includes a light emitting module 580R.

The sub-pixel 502R includes a pixel circuit including a light-emitting element 550R and a transistor 502t that can supply power to the light-emitting element 550R. The light emitting module 580R includes a light emitting element 550R and an optical element (for example, a colored layer CFR).

The light-emitting element 550R includes a lower electrode, an upper electrode, and a layer containing a light-emitting organic compound between the lower electrode and the upper electrode.

The light emitting module 580R has a colored layer CFR in the direction of extracting light. The colored layer may be any layer that transmits light having a specific wavelength. For example, a layer that selectively transmits light exhibiting red, green, blue, or the like can be used. Note that another sub-pixel may be arranged so as to overlap with a window portion where the colored layer is not provided, and light emitted from the light-emitting element may be emitted without passing through the colored layer.

In the case where the sealing layer 560 is provided on the light extraction side, the sealing layer 560 is in contact with the light-emitting element 550R and the coloring layer CFR.

The colored layer CFR is in a position overlapping the light emitting element 550R. Thus, part of the light emitted from the light emitting element 550R passes through the colored layer CFR and is emitted to the outside of the light emitting module 580R in the direction of the arrow shown in the drawing.

There is a light-shielding layer BM so as to surround the colored layer (for example, the colored layer CFR).

An insulating film 521 is provided to cover the transistor 502t included in the pixel circuit. The insulating film 521 can be used as a layer for planarizing unevenness caused by the pixel circuit. In addition, a stacked film including a layer that can suppress diffusion of impurities can be applied to the insulating film 521. Accordingly, a decrease in reliability of the transistor 502t and the like due to unexpected impurity diffusion can be suppressed.

A lower electrode is disposed on the insulating film 521, and a partition wall 528 is disposed on the insulating film 521 so as to overlap an end portion of the lower electrode.

A light emitting element (for example, light emitting element 550R) is configured by sandwiching a layer containing a light emitting organic compound between the lower electrode and the upper electrode. The pixel circuit supplies power to the light emitting element.

In addition, a spacer for controlling the distance between the base material 16 and the substrate 510 is provided over the partition wall 528.

The scan line driver circuit 503g (1) includes a transistor 503t and a capacitor 503c. Note that a transistor which can be formed over the same substrate in the same process as the pixel circuit can be used for the driver circuit.

Various circuits that can convert the detection signal DATA supplied from the detection unit 20U and supply the detection signal DATA to the FPC 1 can be used for the converter CONV (see FIGS. 10A and 11A).

For example, the transistor M4 can be used for the converter CONV.

<< Other Structures >> The display portion 501 includes an antireflection layer 567p at a position overlapping the pixel. As the antireflection layer 567p, for example, a circularly polarizing plate can be used.

The display portion 501 includes a wiring 511 that can supply a signal, and a terminal 519 is provided in the wiring 511. Note that an FPC 2 that can supply a signal such as an image signal and a synchronization signal is electrically connected to the terminal 519.

Note that a printed wiring board (PWB) may be attached to the FPC 2.

The display portion 501 includes wiring such as scanning lines, signal lines, and power supply lines. Various conductive films can be used for the wiring.

Specifically, a metal element selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, tungsten, nickel, yttrium, zirconium, silver or manganese, an alloy containing the above metal element as a component, or the above metal element A combined alloy or the like can be used. In particular, it preferably contains one or more elements selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten. In particular, an alloy of copper and manganese is suitable for fine processing using a wet etching method.

Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a tantalum nitride film or A two-layer structure in which a tungsten film is stacked over a tungsten nitride film, a titanium film, and a three-layer structure in which an aluminum film is stacked over the titanium film and a titanium film is further formed thereon can be used.

Specifically, a laminated structure in which a film of an element selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium, or an alloy film having a plurality selected from these, or a nitride film is stacked on an aluminum film. Can be used.

Alternatively, a light-transmitting conductive material containing indium oxide, tin oxide, or zinc oxide may be used.

<Modification Example of Display Portion> Various transistors can be applied to the display portion 501.

A structure in the case of applying a bottom-gate transistor to the display portion 501 is illustrated in FIGS.

For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, or the like can be applied to the transistor 502t and the transistor 503t illustrated in FIG.

For example, a semiconductor layer containing polycrystalline silicon crystallized by a process such as laser annealing can be applied to the transistor 502t and the transistor 503t illustrated in FIG.

A structure in the case of using a top-gate transistor for the display portion 501 is illustrated in FIG.

For example, a semiconductor layer including a single crystal silicon film or the like transferred from a polycrystalline silicon, a single crystal silicon substrate, or the like can be applied to the transistor 502t and the transistor 503t illustrated in FIG.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 5)
In this embodiment, a structure and a driving method of a detection circuit that can be used for the detection unit of the input / output device of one embodiment of the present invention will be described with reference to FIGS.

FIG. 12 illustrates a structure and a driving method of the detection circuit 19 and the converter CONV according to one embodiment of the present invention.

12A is a circuit diagram illustrating structures of the detection circuit 19 and the converter CONV of one embodiment of the present invention, and FIGS. 12B-1 and 12B-2 illustrate a driving method. It is a timing chart.

In the detection circuit 19 of one embodiment of the present invention, the gate is electrically connected to the first electrode 21 of the detection element C, and the first electrode is electrically connected to a wiring VPI that can supply, for example, a ground potential. The first transistor M1 is provided (see FIG. 12A).

Further, the gate is electrically connected to the scanning line G1 that can supply a selection signal, the first electrode is electrically connected to the second electrode of the first transistor M1, and the second electrode is, for example, The configuration may include a second transistor M2 that is electrically connected to the signal line DL that can supply the detection signal DATA.

The gate is electrically connected to the wiring RES that can supply a reset signal, the first electrode is electrically connected to the first electrode 21 of the sensing element C, and the second electrode is, for example, a ground potential. May be provided with a third transistor M3 electrically connected to the wiring VRES that can supply the voltage VRES.

The capacitance of the sensing element C changes due to, for example, the proximity of the first electrode 21 or the second electrode 22 or the change in the distance between the first electrode 21 and the second electrode 22. Thereby, the detector 20 can supply the detection signal DATA based on the change in the capacitance of the detection element C.

The detector 20 includes a wiring CS that can supply a control signal that can control the potential of the second electrode of the detection element C.

Note that a node where the first electrode 21 of the sensing element C, the gate of the first transistor M1, and the first electrode of the third transistor are electrically connected is referred to as a node A.

The wiring VRES and the wiring VPI can supply a ground potential, for example, and the wiring VPO and the wiring BR can supply a high power supply potential, for example.

The wiring RES can supply a reset signal, the scanning line G1 can supply a selection signal, and the wiring CS can supply a control signal for controlling the potential of the second electrode 22 of the detection element. it can.

The signal line DL can supply the detection signal DATA, and the terminal OUT can supply a signal converted based on the detection signal DATA.

Note that various circuits that can convert the detection signal DATA and supply it to the terminal OUT can be used for the converter CONV. For example, a source follower circuit or a current mirror circuit may be configured by electrically connecting the converter CONV to the detection circuit 19.

Specifically, a source follower circuit can be configured using the converter CONV including the transistor M4 (see FIG. 12A). Note that a transistor that can be manufactured in the same process as the first transistor M1 to the third transistor M3 may be used for the transistor M4.

The transistors M1 to M3 each include a semiconductor layer. For example, a Group 4 element, a compound semiconductor, or an oxide semiconductor can be used for the semiconductor layer. Specifically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, an oxide semiconductor containing indium, or the like can be used.

Note that the structure of a transistor in which an oxide semiconductor is used for a semiconductor layer is described in detail in Embodiment 5.

<Driving Method of Detection Circuit 19> A driving method of the detection circuit 19 will be described. << First Step >> In the first step, a reset signal for turning off the third transistor after turning it on is supplied to the gate, and the potential of the first electrode of the sensing element C is set to a predetermined potential. (Refer to period T1 in FIG. 12B-1).

Specifically, a reset signal is supplied to the wiring RES. The third transistor to which the reset signal is supplied sets the potential of the node A to, for example, the ground potential (see FIG. 12A).

<< Second Step >> In the second step, a selection signal for turning on the second transistor M2 is supplied to the gate, and the second electrode of the first transistor is electrically connected to the signal line DL.

Specifically, a selection signal is supplied to the scanning line G1. The second transistor M2 to which the selection signal is supplied electrically connects the second electrode of the first transistor to the signal line DL (see period T2 in FIG. 12B-1).

<< Third Step >> In the third step, a control signal is supplied to the second electrode of the sensing element, and a potential that changes based on the control signal and the capacitance of the sensing element C is supplied to the gate of the first transistor M1. To do.

Specifically, a rectangular control signal is supplied to the wiring CS. The detection element C to which the rectangular control signal is supplied to the second electrode 22 increases the potential of the node A based on the capacitance of the detection element C (see the second half of the period T2 in FIG. 12B-1).

For example, when the sensing element is placed in the atmosphere, a capacitor having a dielectric constant higher than that of the atmosphere is arranged close to the second electrode 22 of the sensing element C, and thus the capacitance of the sensing element C is apparently large. Become.

As a result, the change in the potential of the node A caused by the rectangular control signal is smaller than that in the case where a substance having a dielectric constant higher than that of the atmosphere is not arranged in proximity (see the solid line in FIG. 12B-2).

<< Fourth Step >> In the fourth step, a signal caused by a change in the potential of the gate of the first transistor M1 is supplied to the signal line DL.

For example, a change in current caused by a change in the potential of the gate of the first transistor M1 is supplied to the signal line DL.

The converter CONV converts a change in current flowing through the signal line DL into a change in voltage and supplies it.

<< Fifth Step >> In the fifth step, a selection signal for turning off the second transistor is supplied to the gate.

Note that the content (may be a part of content) described in one embodiment is different from the content (may be a part of content) described in the embodiment and / or one or more Application, combination, replacement, or the like can be performed on the content described in another embodiment (or part of the content).

Note that the contents described in the embodiments are the contents described using various drawings or the contents described in the specification in each embodiment.

Note that a drawing (or a part thereof) described in one embodiment may be another part of the drawing, another drawing (may be a part) described in the embodiment, and / or one or more. More diagrams can be formed by combining the diagrams (may be a part) described in another embodiment.

In addition, about the content which is not prescribed | regulated in the drawing and text in a specification, the one aspect | mode of the invention which prescribed | regulated removing the content can be comprised. Or, when a numerical value range indicated by an upper limit value and a lower limit value is described for a certain value, the range is unified by arbitrarily narrowing the range or by removing one point in the range. One aspect of the invention excluding a part can be defined. Thus, for example, it can be defined that the prior art does not fall within the technical scope of one embodiment of the present invention.

As a specific example, a circuit diagram using the first to fifth transistors in a certain circuit is described. In that case, it can be specified as an invention that the circuit does not include the sixth transistor. Alternatively, it can be specified that the circuit does not include a capacitor. Furthermore, the invention can be configured by specifying that the circuit does not have the sixth transistor having a specific connection structure. Alternatively, the invention can be configured by specifying that the circuit does not include a capacitor having a specific connection structure. For example, the invention can be defined as having no sixth transistor whose gate is connected to the gate of the third transistor. Alternatively, for example, it can be specified that the first electrode does not include a capacitor connected to the gate of the third transistor.

As another specific example, a certain value is described as, for example, “It is preferable that a certain voltage is 3 V or more and 10 V or less”. In that case, for example, one embodiment of the invention can be defined as excluding the case where a certain voltage is −2 V or higher and 1 V or lower. Alternatively, for example, one embodiment of the invention can be defined as excluding the case where a certain voltage is 13 V or higher. Note that, for example, the invention can be specified such that the voltage is 5 V or more and 8 V or less. In addition, for example, it is also possible to prescribe | regulate invention that the voltage is about 9V. Note that, for example, the voltage is 3 V or more and 10 V or less, but the invention can be specified except for the case where the voltage is 9 V. Note that even if a value is described as “preferably in such a range”, “preferably satisfying these”, or the like, the value is not limited to the description. That is, even if it is described as “preferred” or “preferred”, the description is not necessarily limited thereto.

As another specific example, it is assumed that a certain value is described as, for example, “a certain voltage is preferably 10 V”. In that case, for example, one embodiment of the invention can be defined as excluding the case where a certain voltage is −2 V or higher and 1 V or lower. Alternatively, for example, one embodiment of the invention can be defined as excluding the case where a certain voltage is 13 V or higher.

As another specific example, it is assumed that the property of a certain substance is described as, for example, “a certain film is an insulating film”. In that case, for example, one embodiment of the invention can be defined as excluding the case where the insulating film is an organic insulating film. Alternatively, for example, one embodiment of the invention can be defined as excluding the case where the insulating film is an inorganic insulating film. Alternatively, for example, one embodiment of the invention can be defined as excluding the case where the film is a conductive film. Alternatively, for example, one embodiment of the invention can be defined as excluding the case where the film is a semiconductor film.

As another specific example, it is assumed that a certain laminated structure is described as “a film is provided between the A film and the B film”, for example. In that case, for example, the invention can be defined as excluding the case where the film is a laminated film of four or more layers. Alternatively, for example, the invention can be defined as excluding the case where a conductive film is provided between the A film and the film.

Note that one embodiment of the invention described in this specification and the like can be implemented by various people. However, the implementation may be performed across multiple people. For example, in the case of a transmission / reception system, company A may manufacture and sell a transmitter, and company B may manufacture and sell a receiver. As another example, in the case of a light emitting device having a transistor and a light emitting element, the semiconductor device in which the transistor is formed is manufactured and sold by Company A. In some cases, company B purchases the semiconductor device, forms a light-emitting element on the semiconductor device, and completes the light-emitting device.

In such a case, an aspect of the invention that can claim patent infringement can be configured for either Company A or Company B. In other words, it is possible to constitute an aspect of the invention that only Company A implements, and as an aspect of another invention, it is possible to constitute an aspect of the invention that is implemented only by Company B. is there. In addition, it is possible to determine that one embodiment of the invention that can claim patent infringement against Company A or Company B is clear and described in this specification and the like. For example, in the case of a transmission / reception system, even if there is no description in the case of only a transmitter, or in the case of only a receiver in this specification, etc., one aspect of the invention can be configured with only the transmitter, One embodiment of another invention can be formed using only a receiver, and it can be determined that one embodiment of the invention is clear and described in this specification and the like. As another example, in the case of a light-emitting device including a transistor and a light-emitting element, the description in the case of only a semiconductor device in which a transistor is formed or the description in the case of only a light-emitting device having a light-emitting element is not included in this specification and the like. Even in this case, one embodiment of the invention can be formed using only a semiconductor device in which a transistor is formed, and one embodiment of the invention can be formed using only a light-emitting device including a light-emitting element. It is clear and can be determined to be described in this specification and the like.

Note that in this specification and the like, a person skilled in the art can connect all terminals of an active element (a transistor, a diode, etc.), a passive element (a capacitor element, a resistance element, etc.) without specifying connection destinations. Thus, it may be possible to constitute an aspect of the invention. That is, it can be said that one aspect of the invention is clear without specifying the connection destination. And, when the content specifying the connection destination is described in this specification etc., it is possible to determine that one aspect of the invention that does not specify the connection destination is described in this specification etc. There is. In particular, when there are a plurality of cases where the terminal is connected, it is not necessary to limit the terminal connection to a specific location. Therefore, it is possible to constitute one embodiment of the present invention by specifying connection destinations of only some terminals of active elements (transistors, diodes, etc.) and passive elements (capacitance elements, resistance elements, etc.). There are cases.

Note that in this specification and the like, it may be possible for those skilled in the art to specify the invention when at least the connection portion of a circuit is specified. Alternatively, it may be possible for those skilled in the art to specify the invention when at least the function of a circuit is specified. That is, if the function is specified, it can be said that one aspect of the invention is clear. Then, it may be possible to determine that one embodiment of the invention whose function is specified is described in this specification and the like. Therefore, if a connection destination is specified for a certain circuit without specifying a function, the circuit is disclosed as one embodiment of the invention, and can constitute one embodiment of the invention. Alternatively, if a function is specified for a certain circuit without specifying a connection destination, the circuit is disclosed as one embodiment of the invention, and can constitute one embodiment of the invention.

Note that in this specification and the like, a part of the drawings or texts described in one embodiment can be extracted to constitute one embodiment of the present invention. Therefore, when a figure or a sentence describing a certain part is described, the content of the extracted part of the figure or the sentence is also disclosed as one aspect of the invention and may constitute one aspect of the invention. It shall be possible. And it can be said that one aspect of the invention is clear. Therefore, for example, active elements (transistors, diodes, etc.), wiring, passive elements (capacitance elements, resistance elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operating methods, manufacturing methods It is possible to extract one part of a drawing or a sentence on which one or more of the above are described and constitute one embodiment of the invention. For example, from a circuit diagram having N (N is an integer) circuit elements (transistors, capacitors, etc.), M (M is an integer, M <N) circuit elements (transistors, capacitors) Etc.) can be extracted to constitute one embodiment of the invention. As another example, M (M is an integer and M <N) layers are extracted from a cross-sectional view including N layers (N is an integer) to form one embodiment of the invention. It is possible to do. As another example, M elements (M is an integer and M <N) are extracted from a flowchart including N elements (N is an integer) to form one aspect of the invention. It is possible to do. As another example, a part of the elements is arbitrarily extracted from the sentence “A has B, C, D, E, or F”. "A has E and F", "A has C, E and F", or "A has B, C, D and E" It is possible to constitute one aspect of the invention.

Note that in this specification and the like, when at least one specific example is described in a drawing or text described in one embodiment, it is easy for those skilled in the art to derive a superordinate concept of the specific example. To be understood. Therefore, in the case where at least one specific example is described in a drawing or text described in one embodiment, the superordinate concept of the specific example is also disclosed as one aspect of the invention. Aspects can be configured. One embodiment of the invention is clear.

Note that in this specification and the like, at least the contents shown in the drawings (may be part of the drawings) are disclosed as one embodiment of the invention, and can constitute one embodiment of the invention It is. Therefore, if a certain content is described in the figure, even if it is not described using sentences, the content is disclosed as one aspect of the invention and may constitute one aspect of the invention. Is possible. Similarly, a drawing obtained by extracting a part of the drawing is also disclosed as one embodiment of the invention, and can constitute one embodiment of the invention. And it can be said that one aspect of the invention is clear.

1 FPC
2 FPC
14 Window part 16 Base material 16a Barrier film 16b Base material 16c Resin layer 17 Protective base material 17p Protective layer 19 Detection circuit 20 Detector 20U Detection unit 21 Electrode 22 Electrode 23 Insulating layer 100 Input device 200 Electronic device 201 Display unit 202a Support 202b support body 202c support body 202d cover part 202e cover part 202f frame part 202g frame part 203a hinge 203b hinge 207 housing 209 chain line 211a rotation axis 211b rotation axis 211c axis 301 display part 302 pixel 302B subpixel 302G subpixel 302R subpixel 302t Transistor 303c Capacitor 303g (1) Scanning line drive circuit 303g (2) Imaging pixel drive circuit 303s (1) Image signal line drive circuit 303s (2) Imaging signal line drive circuit 303t Transistor 304 Gate 308 Imaging pixel 308 p photoelectric conversion element 308t transistor 309 FPC
311 Wiring 319 Terminal 321 Insulating layer 328 Partition 329 Spacer 350R Light emitting element 351R Lower electrode 352 Upper electrode 353 EL layer 353a EL layer 353b EL layer 354 Intermediate layer 360 Sealing layer 367BM Light shielding layer 367p Antireflection layer 367R Coloring layer 380B Light emitting module 380G Light emitting module 380R Light emitting module 390 Touch panel 500 Input / output device 501 Display unit 502 Pixel 502B Subpixel 502G Subpixel 502R Subpixel 502t Transistor 503c Capacity 503g Scan line driver circuit 503t Transistor 505 Touch panel 509 FPC
510 substrate 510a insulating layer 510b base material 510c adhesive layer 511 wiring 519 terminal 521 insulating film 528 partition 550R light emitting element 560 sealing layer 567BM light shielding layer 567p antireflection layer 567R colored layer 570 substrate 570a insulating layer 570b flexible substrate 570c adhesive layer 580R Light emitting module 590 Substrate 591 Electrode 592 Electrode 593 Insulating layer 594 Wiring 595 Touch sensor 597 Adhesive layer 598 Wiring 599 Connection layer 801 Substrate 803 Substrate 804 Light emitting unit 806 Drive circuit unit 808 FPC
811 Adhesive layer 813 Insulating layer 814 Conductive layer 815 Insulating layer 816 Conductive layer 817 Insulating layer 817a Insulating layer 817b Insulating layer 820 Transistor 821 Insulating layer 822 Transistor 823 Sealing layer 824 Sealing layer 825 Connector 827 Spacer 830 Light emitting element 831 Lower electrode 833 EL layer 835 Upper electrode 841 Adhesive layer 843 Insulating layer 845 Colored layer 847 Light shielding layer 849 Overcoat 857 Conductive layer 857a Conductive layer 857b Conductive layer BR Wiring CFB Colored layer CFG Colored layer CFR Colored layer CS Wiring G1 Scan line M1 Transistor M2 Transistor M3 transistor M4 transistor RES wiring OUT terminal T1 period T2 period VPI wiring VPO wiring VRES wiring

Claims (6)

A display unit having a light emitting element on a flexible film;
A first support fixed to the center of the display unit;
Two hinges at both ends of the first support;
A second support and a third support sandwiching the first support;
The second support has a first cover portion that hides an end portion of the display portion,
An electronic device in which an angle formed between the second support and the first support is changed by rotation of a hinge, an end portion hidden by the first cover is exposed, and an area of a display unit is increased. 2. The width a of the end portion hidden by the first cover portion according to claim 1 is greater than the product of the radii of curvature r and π in the region where the display portion of the second support is bent by rotation of the hinge. Wide electronic equipment. 3. The electronic device according to claim 1, wherein the flexible film has a mechanism that slides with a surface of the second support by the rotation of the hinge. 4. The electronic device according to claim 1, wherein the flexible film has a mechanism that slides with a surface of the third support by the rotation of the hinge. 5. A display unit having a light emitting element on a flexible film;
A first support fixed to the center of the display unit;
Two hinges at both ends of the first support;
A second support and a third support sandwiching the first support;
The second support body includes a first cover portion that overlaps the first end portion of the display portion,
The third support body has a second cover portion that overlaps the second end portion of the display portion,
The angle of the second support formed by the rotation of the hinge changes with the first support, a part of the display unit that overlaps the hinge is bent, and the first of the display unit overlaps the first cover unit. The area of the end of the
The angle formed between the third support and the first support is changed by rotation of the hinge, a part of the display unit overlapping with the hinge is bent, and the second of the display unit overlapping with the second cover unit. Electronic equipment that reduces the area of the edge of the. A first region;
A second region adjacent to the first region;
A third region adjacent to the first region;
A fourth region adjacent to the second region;
An electronic device comprising a display unit having the third region and a fifth region adjacent to the third region,
The display unit is formed on the same flexible film,
The second region is a first side surface of an electronic device;
The third region is a second side surface of the electronic device;
The fourth region overlaps the first region;
The fifth region overlaps the first region;
The electronic device in which the fourth region and the fifth region do not overlap.

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