WO2015195365A1 - Memristive nanofiber neural netwoks - Google Patents
Memristive nanofiber neural netwoks Download PDFInfo
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- WO2015195365A1 WO2015195365A1 PCT/US2015/034414 US2015034414W WO2015195365A1 WO 2015195365 A1 WO2015195365 A1 WO 2015195365A1 US 2015034414 W US2015034414 W US 2015034414W WO 2015195365 A1 WO2015195365 A1 WO 2015195365A1
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- memristive
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- fiber
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/04—Architecture, e.g. interconnection topology
- G06N3/044—Recurrent networks, e.g. Hopfield networks
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/04—Architecture, e.g. interconnection topology
- G06N3/049—Temporal neural networks, e.g. delay elements, oscillating neurons or pulsed inputs
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/04—Architecture, e.g. interconnection topology
- G06N3/0495—Quantised networks; Sparse networks; Compressed networks
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
- G06N3/065—Analogue means
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/08—Learning methods
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/08—Learning methods
- G06N3/082—Learning methods modifying the architecture, e.g. adding, deleting or silencing nodes or connections
Definitions
- a memristor is a two-terminal device that changes its resistance in response to the amount of electrical current that has previously flown through the device.
- Memristors may be used in crossbar neural network architectures.
- crossbar neural network multiple memristors are connected in a perpendicular crossbar array with memristor synapses at each crossing.
- crossbar neural network architectures may require the use of complex designs in order to counteract parasitic leak paths.
- redundant synapses do not exist in crossbar neural networks.
- a recurrent connection in a crossbar neural network requires complex circuit layouts, and from a footprint point of view, crossbar designs scale quadratically in size with the number of neurons.
- FIG. 1 is a drawing of a core-shell memristive nanofiber according to various embodiments of the present disclosure.
- FIG. 2 is a drawing of an example of a nanofiber-based memristive neural network according to various embodiments of the present disclosure.
- FIG. 3 is a drawing of an example of a nanofiber-based memristive neural network according to various embodiments of the present disclosure.
- FIG. 4 is a drawing of an example of a simulation of a circuit layout of a nanofiber-based memristive neural network according to various embodiments of the present disclosure.
- FIG. 5 is a flowchart illustrating an example of a method of creating a nanofiber-based memristive neural network according to various embodiments of the present disclosure.
- a neural network may comprise populations of simulated neurons with weighted connections between them.
- a neural network in accordance with various embodiments of the present disclosure may comprise an array of neural nodes that are interconnected using randomized connections of memristive fibers.
- Such a neural node may comprise, for example, a Complimentary Metal-Oxide-Semiconductor (CMOS) Leaky Integrate-and-Fire (LIF) neural circuit, or any other suitable type of neural circuit.
- CMOS Complimentary Metal-Oxide-Semiconductor
- LIF Leaky Integrate-and-Fire
- Each neural node may output one or more signals that are responsive to one or more input signals that the neural node has received. For example, upon one or more input current signals reaching a threshold value, a neural node may output a voltage spike to one or more output paths.
- a neural network may also comprise memristive nanofibers.
- Memristive nanofibers may be used to form artificial synapses in neural networks.
- Each memristive nanofiber may couple one or more neural nodes to one or more other neural nodes.
- one or more output signals may be transmitted from a particular neural node to one or more other neural nodes.
- the particular neural nodes to which particular memristive nanofibers are connected may be randomized. In this regard, the particular neural nodes to which the memristive nanofibers are connected are not predetermined prior to the memristive fibers being connected to the one or more neural nodes.
- the neural network may be used, for example, to model a Liquid State Machine (LSM).
- LSMs Liquid State Machines
- FIG. 14 A New Framework for Neural Computation Based on Perturbations, Neural Computation (Volume 14, Issue 1 1 ) (Nov. 1 1 , 2002), which is incorporated by reference herein in its entirety.
- Each memristive nanofiber of the memristive neural network may comprise a conductive core, a memristive shell, and one or more electrodes.
- Memristive nanofibers having a conductive core, memristive shell, and one or more electrodes may be formed using electrospinning or any other suitable method.
- An electrode of the memristive nanofiber may serve as a conductive attachment point between the memristive nanofiber and an input or output terminal of a neural node.
- the conductive core of the memristive nanofiber in some embodiments may comprise T1O2 and/or any other suitable material.
- the memristive shell may at least partially surround the conductive core and thereby form a synapse between two or more neural nodes.
- the memristive shell may cause the memristive nanofiber to form a connection that increases or decreases in strength in response to the past signals that have traveled through the memristive nanofiber.
- the memristive shell may comprise Ti0 2 and/or any other suitable material with memristive properties.
- the memristive nanofibers in the memristive neural network may form randomized connections between the neural nodes.
- the probability of two neurons being connected decreases as the distance between neural nodes increases.
- patterned electric fields may be used so that particular connection types are more likely to be formed between neural nodes when the connections are made.
- a neural network may be formed using patterned electric fields or other suitable methods so that multiple layers of memristive nanofibers are created.
- Such a neural network may also comprise connections that facilitate transmission of signals between various layers.
- the layers and communication paths between layers are modeled after a neocortex of a brain.
- Memristive neural networks in accordance with various embodiments of the present disclosure may provide various types of benefits.
- such a memristive neural network may be capable of spike-timing-dependent plasticity (STDP).
- STDP spike-timing-dependent plasticity
- the memristive neural network may comprise random, spatially dependent connections.
- the memristive neural network may comprise inhibitory outputs and/or recurrent connections.
- the memristive neural networks in accordance with various embodiments of the present disclosure may have properties that are similar to biological neural networks.
- Each memristive nanofiber 100 of a memristive neural network may comprise one or more electrodes 103, a conductive core 106, and a memristive shell 109.
- An electrode 103 of the memristive nanofiber 100 may serve as a conductive attachment point between the memristive nanofiber 100 and an input or output terminal of a neural node.
- the conductive core 106 of the memristive nanofiber 100 in some embodiments may comprise ⁇ 2 and/or any other suitable material with memristive properties.
- the memristive shell 109 may at least partially surround the conductive core 106 and thereby form a synapse between two or more neural nodes.
- the memristive shell 109 may cause the memristive nanofiber 100 to form a connection that increases or decreases in strength in response to the past signals that have traveled through the memristive nanofiber 100.
- the memristive shell 109 may comprise Ti0 2 and/or any other suitable material, such as polyaniline.
- the memristive nanofibers 100 can be used as memristive connections 206A-206J between CMOS-based neuron arrays 203A-203E in the nanofiber-based memristive neural network 200.
- the memristive nanofibers 100 may form randomized memristive connections 206A-206J between inputs 212A- 212E and outputs 209A-209E of the CMOS-based neuron arrays 203A-203E.
- the nanofiber-based memristive neural network 200 depicts examples of memristive nanofibers 100, referred to herein as memristive nanofibers 100A-100D, comprising conductive cores 106, referred to herein as the conductive cores 106A-106D, and memristive shells 109, referred to herein as the memristive shells 109A-109D.
- the memristive nanofibers 100A-100D may be used as memristive connections 206A-206J between CMOS neurons 327A and 327B located on the silicon substrate 330.
- Each memristive shell 109A-109D partially surrounds each conductive core 106A-106D and thereby forms a synapse 318A-318D between two or more neural nodes.
- the input electrodes 321 A and 321 B and output electrodes 324A and 324B may serve as conductive attachment points between memristive nanofibers 100A-100D and input terminals 212A-212E or output terminals 209A-209E of the neural nodes.
- FIG. 4 shown is a simulation 403 of an example of a circuit 406 of a nanofiber-based memristive neural connection according to various embodiments of the present disclosure.
- the circuit 406 depicts a nanofiber-based memristive neural connection including memristive shells 109A-109D, voltage source V1 421 , voltage source V2 409, resistor R3 412, resistor R4 415, and resistor R1 418.
- the simulation 403 shows that driving current through a nanofiber- based memristive neural connection will not cause the effects from opposing memristors on a nanofiber to cancel each other out.
- FIG. 5 shown is a flowchart illustrating one example of a method of creating a nanofiber-based memristive neural network 200 (FIG. 2) according to various embodiments of the present disclosure.
- stoichiometric nanofibers are synthesized using a precursor.
- the stoichiometric nanofibers may comprise, for example, Ti0 2 and/or any other suitable material.
- the precursor may be for example, titanium isopropoxide, titanium butoxide, or another suitable precursor.
- a core-shell memristive nanofiber 100 (FIG. 1 ) is created.
- the core-shell memristive nanofiber 100 (FIG. 1 ) may be created by electrospinning a stoichiometric Ti0 2 outer shell 109 with a doped conductive Ti0 2 -x core 106.
- electrodes 103 may be deposited on the core-shell memristive nanofiber 100 (FIG. 1 ).
- memristive properties are verified and a spike-timing dependent plasticity is implemented to create a computational model based on the nanofiber network response.
- a physical prototype of a memristive nanofiber neural network 200 using CMOS neurons 327A-327B is created. Thereafter, the process ends.
- Disjunctive language used herein such as the phrase "at least one of X, Y, or Z," unless specifically stated otherwise, is otherwise understood with the context as used in general to present that an item, term, etc., may be either X, Y, or Z, or any combination thereof (e.g., X, Y, and/or Z). Thus, such disjunctive language does not imply that certain embodiments require at least one of X, at least one of Y, or at least one of Z to each be present.
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Abstract
Description
Claims
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP15810294.7A EP3158509A4 (en) | 2014-06-19 | 2015-06-05 | Memristive nanofiber neural networks |
| KR1020177000606A KR20170019414A (en) | 2014-06-19 | 2015-06-05 | Memristive nanofiber neural networks |
| JP2016573557A JP6571692B2 (en) | 2014-06-19 | 2015-06-05 | Memristive neural network and method for forming the same |
| BR112016029682A BR112016029682A2 (en) | 2014-06-19 | 2015-06-05 | neural networks of memristive nanofibers. |
| AU2015277645A AU2015277645B2 (en) | 2014-06-19 | 2015-06-05 | Memristive nanofiber neural netwoks |
| US15/383,527 US10198691B2 (en) | 2014-06-19 | 2016-12-19 | Memristive nanofiber neural networks |
| US16/239,996 US10614358B2 (en) | 2014-06-19 | 2019-01-04 | Memristive nanofiber neural networks |
| US16/786,420 US11055614B2 (en) | 2014-06-19 | 2020-02-10 | Memristive nanofiber neural networks |
| US17/342,096 US11941515B2 (en) | 2014-06-19 | 2021-06-08 | Memristive nanofiber neural networks |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462014201P | 2014-06-19 | 2014-06-19 | |
| US62/014,201 | 2014-06-19 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US15/383,527 Continuation-In-Part US10198691B2 (en) | 2014-06-19 | 2016-12-19 | Memristive nanofiber neural networks |
| US15/383,527 Continuation US10198691B2 (en) | 2014-06-19 | 2016-12-19 | Memristive nanofiber neural networks |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2015195365A1 true WO2015195365A1 (en) | 2015-12-23 |
Family
ID=54935975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2015/034414 Ceased WO2015195365A1 (en) | 2014-06-19 | 2015-06-05 | Memristive nanofiber neural netwoks |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP3158509A4 (en) |
| JP (1) | JP6571692B2 (en) |
| KR (1) | KR20170019414A (en) |
| AU (1) | AU2015277645B2 (en) |
| BR (1) | BR112016029682A2 (en) |
| WO (1) | WO2015195365A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10332592B2 (en) | 2016-03-11 | 2019-06-25 | Hewlett Packard Enterprise Development Lp | Hardware accelerators for calculating node values of neural networks |
| US10430493B1 (en) | 2018-04-05 | 2019-10-01 | Rain Neuromorphics Inc. | Systems and methods for efficient matrix multiplication |
| US11450712B2 (en) | 2020-02-18 | 2022-09-20 | Rain Neuromorphics Inc. | Memristive device |
| CN120046673A (en) * | 2025-04-23 | 2025-05-27 | 武汉工程大学 | Memristor neural network circuit with partially reinforced operability condition reflection |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10198691B2 (en) | 2014-06-19 | 2019-02-05 | University Of Florida Research Foundation, Inc. | Memristive nanofiber neural networks |
| JP2020521248A (en) * | 2017-05-22 | 2020-07-16 | ユニバーシティ オブ フロリダ リサーチ ファンデーション インコーポレーティッド | Deep learning in a bipartite memristor network |
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| US20100081958A1 (en) * | 2006-10-02 | 2010-04-01 | She Christy L | Pulse-based feature extraction for neural recordings |
| US8050078B2 (en) * | 2009-10-27 | 2011-11-01 | Hewlett-Packard Development Company, L.P. | Nanowire-based memristor devices |
| US8433665B2 (en) * | 2010-07-07 | 2013-04-30 | Qualcomm Incorporated | Methods and systems for three-memristor synapse with STDP and dopamine signaling |
| KR20140071813A (en) * | 2012-12-04 | 2014-06-12 | 삼성전자주식회사 | Resistive Random Access Memory Device formed on Fiber and Manufacturing Method of the same |
| US9418331B2 (en) * | 2013-10-28 | 2016-08-16 | Qualcomm Incorporated | Methods and apparatus for tagging classes using supervised learning |
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2015
- 2015-06-05 JP JP2016573557A patent/JP6571692B2/en active Active
- 2015-06-05 WO PCT/US2015/034414 patent/WO2015195365A1/en not_active Ceased
- 2015-06-05 BR BR112016029682A patent/BR112016029682A2/en not_active Application Discontinuation
- 2015-06-05 KR KR1020177000606A patent/KR20170019414A/en not_active Ceased
- 2015-06-05 EP EP15810294.7A patent/EP3158509A4/en not_active Ceased
- 2015-06-05 AU AU2015277645A patent/AU2015277645B2/en not_active Ceased
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20040150010A1 (en) * | 2003-01-31 | 2004-08-05 | Greg Snider | Molecular-junction-nanowire-crossbar-based neural network |
| WO2010106116A1 (en) * | 2009-03-17 | 2010-09-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Neural network circuit comprising nanoscale synapses and cmos neurons |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10332592B2 (en) | 2016-03-11 | 2019-06-25 | Hewlett Packard Enterprise Development Lp | Hardware accelerators for calculating node values of neural networks |
| US10430493B1 (en) | 2018-04-05 | 2019-10-01 | Rain Neuromorphics Inc. | Systems and methods for efficient matrix multiplication |
| WO2019195660A1 (en) * | 2018-04-05 | 2019-10-10 | Rain Neuromorphics Inc. | Systems and methods for efficient matrix multiplication |
| US20200042572A1 (en) * | 2018-04-05 | 2020-02-06 | Rain Neuromorphics Inc. | Systems and methods for efficient matrix multiplication |
| US10990651B2 (en) | 2018-04-05 | 2021-04-27 | Rain Neuromorphics Inc. | Systems and methods for efficient matrix multiplication |
| EP3776271A4 (en) * | 2018-04-05 | 2022-01-19 | Rain Neuromorphics Inc. | SYSTEMS AND METHODS FOR EFFICIENT MATRIX MULTIPLICATION |
| US12223009B2 (en) | 2018-04-05 | 2025-02-11 | Rain Neuromorphics Inc. | Systems and methods for efficient matrix multiplication |
| US11450712B2 (en) | 2020-02-18 | 2022-09-20 | Rain Neuromorphics Inc. | Memristive device |
| US12069869B2 (en) | 2020-02-18 | 2024-08-20 | Rain Neuromorphics Inc. | Memristive device |
| CN120046673A (en) * | 2025-04-23 | 2025-05-27 | 武汉工程大学 | Memristor neural network circuit with partially reinforced operability condition reflection |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2015277645B2 (en) | 2021-01-28 |
| JP6571692B2 (en) | 2019-09-04 |
| EP3158509A4 (en) | 2018-02-28 |
| EP3158509A1 (en) | 2017-04-26 |
| KR20170019414A (en) | 2017-02-21 |
| AU2015277645A1 (en) | 2016-12-22 |
| JP2017527000A (en) | 2017-09-14 |
| BR112016029682A2 (en) | 2018-07-10 |
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