WO2015190242A1 - Light-emitting device - Google Patents
Light-emitting device Download PDFInfo
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- WO2015190242A1 WO2015190242A1 PCT/JP2015/064305 JP2015064305W WO2015190242A1 WO 2015190242 A1 WO2015190242 A1 WO 2015190242A1 JP 2015064305 W JP2015064305 W JP 2015064305W WO 2015190242 A1 WO2015190242 A1 WO 2015190242A1
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- light
- light emitting
- emitting unit
- light source
- emitting device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Definitions
- the present invention relates to a light emitting device.
- Patent Document 1 describes a light-emitting device that includes a blue LED and a sealing portion that seals the blue LED and is made of a resin composition that includes quantum dots.
- the color tone of light emitted from the light emitting device does not differ depending on the light emitting direction.
- the light emitted from the light emitting device along the optical axis direction and the light emitted along the direction inclined with respect to the optical axis are required not to have different color tones. .
- the light-emitting device disclosed in Patent Document 1 contains a dispersant in the resin composition and uniformly irradiates light emitted from the blue LED to the quantum dots to improve the conversion efficiency. It has not led to improvement.
- the present invention provides a light emitting device using quantum dots and having a small color unevenness.
- the light emitting device includes a light emitting unit and a light source.
- the light emitting unit includes quantum dots.
- the light source is arranged at the center of the light emitting unit in plan view.
- the light source emits light having an excitation wavelength of the quantum dot to the light emitting unit. At least at the peripheral edge of the light emitting part, the thickness of the light emitting part gradually decreases toward the outside.
- the light-emitting device may further include a device main body having a concave portion that accommodates the light source and the light-emitting portion, and a cover member that covers the concave portion and seals the light source and the light-emitting portion together with the device main body.
- the light emission part is provided on the surface at the side of the recessed part of a cover member.
- the light-emitting device includes a first main wall portion, a second main wall portion facing the first main wall portion at an interval, a first main wall portion, and a second main wall portion. It may further include a cell having a side wall portion connected to the wall portion and arranged separately from the light source. In that case, the light emitting unit may be provided on the first or second main wall in the cell.
- the light source preferably emits divergent light to the light emitting portion.
- the light emitting section has a larger area than the light source in plan view.
- the light emitting section preferably emits mixed light of the light emission of the quantum dots and the light emitted from the light source and transmitted through the light emitting section.
- FIG. 1 is a schematic cross-sectional view of the light emitting device according to the first embodiment.
- FIG. 2 is a schematic cross-sectional view of the light emitting device according to the second embodiment.
- FIG. 3 is a schematic cross-sectional view of a light emitting device according to a third embodiment.
- FIG. 4 is a schematic cross-sectional view of a light emitting device according to a fourth embodiment.
- FIG. 5 is a schematic cross-sectional view of a light emitting device according to a fifth embodiment.
- FIG. 1 is a schematic cross-sectional view of a light emitting device 1 according to the first embodiment.
- the light emitting device 1 is a device that emits light having a wavelength different from that of the excitation light when the excitation light is incident.
- the light emitting device 1 may emit mixed light of excitation light and light generated by irradiation of excitation light.
- the light emitting device 1 has a device body 10.
- the device main body 10 includes a first member 11 and a second member 12.
- the second member 12 is provided on the first member 11.
- the second member 12 is provided with a through hole 12 a that opens to the first member 11.
- a recess 13 is formed by the through hole 12a.
- the through hole 12a tapers toward the first member 11 side. For this reason, the side wall 13 a of the recess 13 is inclined with respect to the main surface of the first member 11.
- the device body 10 may be made of any material.
- the device body 10 may be made of, for example, ceramics such as low-temperature co-fired ceramics, metal, resin, glass, or the like.
- the material constituting the first member 11 and the material constituting the second member 12 may be the same or different.
- the light source 20 is disposed on the bottom wall 13b of the recess 13 of the device body 10.
- the light source 20 can be composed of, for example, an LED (Light Emitting Diode) element, an LD (Laser Diode) element, or the like. In the present embodiment, an example in which the light source 20 is configured by LEDs will be described.
- a light emitting unit 30 is arranged in the recess 13.
- the light emitting unit 30 and the light source 20 are accommodated in the recess 13.
- the light emitting unit 30 is arranged so that light from the light source 20 enters.
- the light emitting unit 30 is provided on the surface of the cover member 40 on the concave portion 13 side.
- the light emitting unit 30 is disposed above the light source 20 so as to cover the light source 20.
- the light source 20 emits divergent light to the light emitting unit 30.
- the light source 20 emits light having an excitation wavelength of quantum dots included in the light emitting unit 30 to the light emitting unit 30.
- the light emitted from the light source 20 is not necessarily limited to the light having the excitation wavelength of the quantum dots.
- the light emitted from the light source 20 may include, for example, light of other wavelengths in addition to the light of the excitation wavelength of the quantum dots.
- the light source 20 is arranged at the center of the light emitting unit 30.
- the light source 20 is arranged so as to overlap the center line C extending in the thickness direction of the light emitting unit 30.
- the light emitting unit 30 has a larger area than the light source 20.
- the area of the light emitting unit 30 is preferably 2 to 400 times the area of the light source 20, and more preferably 20 to 75 times. If the area of the light emitting unit 30 is too small, a portion that passes through and exits the light emitting unit 30 and a portion that exits without passing through the light emitting unit 30 are likely to exist in a plan view, and uneven color tone increases. On the other hand, if the area of the light emitting unit 30 is too large, the light emitted from the light source 20 is difficult to be applied to the peripheral part of the light emitting unit 30, and the color tone unevenness increases.
- the light emitting unit 30 includes quantum dots.
- the light emitting unit 30 may include one type of quantum dot or may include a plurality of types of quantum dots.
- the quantum dot emits light having a wavelength different from that of the excitation light when the quantum dot excitation light is incident.
- the wavelength of the light emitted from the quantum dot depends on the particle diameter of the quantum dot. That is, the wavelength of the light obtained by changing the particle diameter of the quantum dots can be adjusted. For this reason, the particle diameter of a quantum dot is made into the particle diameter according to the wavelength of the light to obtain.
- the particle size of the quantum dots is usually about 2 nm to 10 nm.
- quantum dots that emits blue visible light (fluorescence with a wavelength of 440 nm to 480 nm) when irradiated with excitation light of ultraviolet to near ultraviolet with a wavelength of 300 nm to 440 nm
- the particle diameter is about 2.0 nm to 3.0 nm.
- quantum dots that emit green visible light (fluorescence having a wavelength of 500 nm to 540 nm) when irradiated with ultraviolet to near ultraviolet excitation light having a wavelength of 300 nm to 440 nm or blue excitation light having a wavelength of 440 nm to 480 nm include particle diameters.
- CdSe / ZnS microcrystals having a thickness of about 3.0 nm to 3.3 nm.
- Specific examples of quantum dots that emit yellow visible light (fluorescence having a wavelength of 540 nm to 595 nm) when irradiated with ultraviolet to near ultraviolet excitation light having a wavelength of 300 nm to 440 nm or blue excitation light having a wavelength of 440 nm to 480 nm include particle diameters.
- CdSe / ZnS microcrystals having a thickness of about 3.3 nm to 4.5 nm.
- quantum dots that emit red visible light (fluorescence with a wavelength of 600 nm to 700 nm) when irradiated with ultraviolet to near ultraviolet excitation light with a wavelength of 300 nm to 440 nm or blue excitation light with a wavelength of 440 nm to 480 nm include particle diameters.
- CdSe / ZnS microcrystals having a thickness of about 4.5 nm to 10 nm.
- the light emitting unit 30 is solid.
- the light emitting unit 30 includes a resin in which quantum dots are dispersed.
- the quantum dots are preferably dispersed substantially uniformly in the dispersion medium. By dispersing the quantum dots substantially uniformly in the dispersion medium, in-plane variation in the amount of light from the light emitting unit 30 can be suppressed.
- the resin preferably used include a silicone resin, an epoxy resin, and an acrylic resin.
- the light emitting unit 30 may further include, for example, a light dispersing agent in addition to the resin and the quantum dots.
- the light emission part 30 may be comprised by the laminated body of the multiple layers of light emitting layer.
- the plurality of light emitting layers may include a plurality of light emitting layers including quantum dots that emit light having different wavelengths.
- a stacked body of a plurality of light-emitting layers including a first light-emitting layer including quantum dots that emit light having a first wavelength and a second light-emitting layer including quantum dots that emit light having a second wavelength You may comprise the light emission part 30 by.
- the recess 13 is closed by the cover member 40.
- the cover member 40 and the device body 10 are joined.
- a sealing space 50 is defined by the cover member 40 and the device body 10.
- the light source 20 and the light emitting unit 30 are sealed in the sealed space 50.
- the light emitting part may be preferable to provide the light emitting part with a uniform thickness.
- the optical path length in the light emitting part of the light incident on the light emitting part is different between the part located immediately above the light source and the other part of the light emitting part.
- the incident angle of light to the light emitting unit is perpendicular to the portion of the light emitting unit located immediately above the light source. That is, in the portion located immediately above the light source, the incident angle of light to the light emitting portion is 0 °. Therefore, the optical path length is shortened in the portion located immediately above the light source.
- the incident angle of light to the light emitting unit increases as the distance from the light source increases in plan view. Therefore, the optical path length increases as the distance from the light source increases in plan view. For this reason, when the light emitting part has a uniform thickness, the optical path length in the light emitting part of the incident light to the light emitting part becomes longer as the distance from the light source in plan view. Therefore, in a plan view, in the portion near the light source in the light emitting unit, the amount of excitation light absorbed by the quantum dots is reduced by the amount of the optical path length, and the amount of light emitted from the quantum dots is also reduced.
- the amount of excitation light absorbed by the quantum dots increases as the optical path length increases, and the amount of light emitted from the quantum dots also increases.
- the color tone of light emitted from the light emitting unit varies depending on the position of the light emitting unit. Specifically, the color tone of light emitted from the light emitting device is different between a portion near the light source and a portion away from the light source in the plan view.
- the thickness of the light emitting unit 30 gradually decreases toward the outside at least at the peripheral portion of the light emitting unit 30. For this reason, the optical path length in the peripheral part of the light emission part 30 is short. Therefore, the difference between the optical path length in the central portion of the light emitting unit 30 and the optical path length in the peripheral portion of the light emitting unit 30 is small. Therefore, the difference between the color tone of the light emitted from the central portion of the light emitting unit 30 and the color tone of the light emitted from the peripheral portion of the light emitting unit 30 is small. Therefore, the color unevenness is small in the light emitting device 1.
- the optical path length of the light emitted from the light source in the light emitting unit 30 is substantially constant in any part of the light emitting unit 30. Therefore, for example, as in the present embodiment, it may be preferable that the thickness of the light emitting unit 30 monotonously decreases from the center in a plan view toward the outside.
- FIG. 2 is a schematic cross-sectional view of a light emitting device 1a according to the second embodiment.
- the thickness of the light emitting unit 30 is preferably monotonously decreasing from the center in plan view to the outside.
- the present invention is not limited to this configuration.
- the thickness of the portion excluding the peripheral portion of the light emitting unit 30 is substantially constant.
- the thickness of the light emitting portion 30 is gradually reduced toward the outside at the peripheral edge.
- FIG. 3 is a schematic cross-sectional view of a light emitting device 1b according to the third embodiment.
- the present invention is not limited to this configuration.
- the light emitting unit 30 is provided in the recess 13 so as to block the light source 20. Even in this case, uneven color tone can be reduced by configuring the light emitting unit 30 so that the thickness of the light emitting unit 30 gradually decreases toward the outside at least at the peripheral portion of the light emitting unit 30.
- FIG. 4 is a schematic cross-sectional view of a light emitting device 1c according to the third embodiment.
- the light emitting device 1 c includes a cell 60.
- the cell 60 has a first main wall portion 61, a second main wall portion 62, and a side wall portion 63.
- the first main wall portion 61 and the second main wall portion 62 are opposed to each other at an interval.
- the side wall portion 63 is provided between the first main wall portion 61 and the second main wall portion 62.
- the side wall portion 63 is joined to each of the first and second main wall portions 61 and 62.
- the side wall portion 63 and the first and second main wall portions 61 and 62 may be joined using, for example, anodic bonding, welding, or an inorganic bonding material.
- the first and second main wall portions 61 and 62 can be made of glass, ceramics, or the like, for example.
- the side wall 63 can be made of, for example, glass, ceramics, metal, a glass material covered with a metal coating layer, a ceramic material, or the like.
- the light emitting unit 30 is provided on the inner wall of each of the first and second main wall portions 61 and 62. Specifically, in the present embodiment, it is provided on the inner wall of the first main wall portion 61 located on the opposite side to the light source 20. But the light emission part may be provided on the inner wall of the 2nd main wall part by the side of a light source.
- the heat from the light source 20 is not easily transmitted to the light emitting unit 30 by arranging the light emitting unit 30 in the cell 60 separated from the light source 20 as in the present embodiment. Therefore, thermal degradation of the light emitting unit 30 can be suppressed.
- FIG. 5 is a schematic cross-sectional view of a light emitting device according to a fifth embodiment.
- 1st and 2nd embodiment demonstrated the example in which the sealing space 50 located between the light source 20 and the light emission part 30 was comprised by the space.
- the present invention is not limited to this configuration.
- the sealing space 50 is filled with a resin 70.
- the refractive index difference between the resin 70 and the light emitting unit 30 and the refractive index difference between the resin 70 and the light source 20 can be reduced. Therefore, the light emission efficiency can be improved.
- Resin 70 can be made of, for example, a silicone resin, an epoxy resin, an acrylic resin, or the like.
- Resin 70 may contain a light dispersing agent. In this case, the uniformity of light from the light source 20 to the light emitting unit 30 can be further enhanced.
- Light emitting device 10 Device main body 11 First member 12 Second member 12a Through hole 13 Recess 13a Side wall 13b Bottom wall 20 Light source 30 Light emitting unit 40 Cover member 50 Sealing space 60 Cell 61 First 1 main wall 62 second main wall 70 resin 63 side wall C center line
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Abstract
Description
本発明は、発光デバイスに関する。 The present invention relates to a light emitting device.
近年、発光ダイオードを用いた発光デバイスの進歩が目覚しく、液晶のバックライト、大型ディスプレイ等に採用されている。特に、短波長光の発光素子の半導体材料の発展により、短波長の光を得られるようになってきたため、これを用いて蛍光体を励起してより多様な波長の光を得ることができるようになった。 In recent years, light-emitting devices using light-emitting diodes have made remarkable progress and have been adopted for liquid crystal backlights, large displays, and the like. In particular, with the development of semiconductor materials for light emitting elements with short wavelength light, it has become possible to obtain short wavelength light, so that phosphors can be used to obtain light of various wavelengths. Became.
従来、量子ドットを用いた発光デバイスが知られている。例えば、特許文献1には、青色LEDと、青色LEDを封止しており、量子ドットを含む樹脂組成物からなる封止部とを備える発光デバイスが記載されている。
Conventionally, light emitting devices using quantum dots are known. For example,
ところで、量子ドットを用いた発光デバイスにおいては、発光デバイスから出射する光の色調が、光の出射方向によって相違しないことが要求されている。具体的には、例えば、発光デバイスから光軸方向に沿って出射した光と、光軸に対して傾斜した方向に沿って出射した光とで、相互に色調が相違しないことが要求されている。 Incidentally, in a light emitting device using quantum dots, it is required that the color tone of light emitted from the light emitting device does not differ depending on the light emitting direction. Specifically, for example, the light emitted from the light emitting device along the optical axis direction and the light emitted along the direction inclined with respect to the optical axis are required not to have different color tones. .
しかしながら、特許文献1で開示されている発光デバイスは、樹脂組成物に分散剤を含有させて、青色LEDから出射する光を量子ドットに均一に照射させ変換効率を向上させるものであり、色調むらの改善に至っていない。
However, the light-emitting device disclosed in
本発明は、量子ドットを用いた発光デバイスであって、色調むらの小さな発光デバイスを提供する。 The present invention provides a light emitting device using quantum dots and having a small color unevenness.
本発明に係る発光デバイスは、発光部と、光源とを備える。発光部は、量子ドットを含む。光源は、発光部の平面視における中央部に配されている。光源は、発光部に対して量子ドットの励起波長の光を出射する。発光部の少なくとも周縁部において、発光部の厚みが外側に向かって漸減している。 The light emitting device according to the present invention includes a light emitting unit and a light source. The light emitting unit includes quantum dots. The light source is arranged at the center of the light emitting unit in plan view. The light source emits light having an excitation wavelength of the quantum dot to the light emitting unit. At least at the peripheral edge of the light emitting part, the thickness of the light emitting part gradually decreases toward the outside.
本発明に係る発光デバイスは、光源及び発光部を収容する凹部を有するデバイス本体と、凹部を覆い、デバイス本体と共に光源及び発光部を封止するカバー部材とをさらに備えていてもよい。その場合、発光部は、カバー部材の凹部側の表面の上に設けられていることが好ましい。 The light-emitting device according to the present invention may further include a device main body having a concave portion that accommodates the light source and the light-emitting portion, and a cover member that covers the concave portion and seals the light source and the light-emitting portion together with the device main body. In that case, it is preferable that the light emission part is provided on the surface at the side of the recessed part of a cover member.
本発明に係る発光デバイスは、第1の主壁部と、第1の主壁部と間隔を置いて対向している第2の主壁部と、第1の主壁部と第2の主壁部とを接続している側壁部とを有し、光源とは離間して配されたセルをさらに備えていてもよい。その場合、発光部は、セル内において、第1または第2の主壁部の上に設けられていてもよい。 The light-emitting device according to the present invention includes a first main wall portion, a second main wall portion facing the first main wall portion at an interval, a first main wall portion, and a second main wall portion. It may further include a cell having a side wall portion connected to the wall portion and arranged separately from the light source. In that case, the light emitting unit may be provided on the first or second main wall in the cell.
本発明に係る発光デバイスでは、光源は、好ましくは、発光部に対して発散光を出射する。 In the light emitting device according to the present invention, the light source preferably emits divergent light to the light emitting portion.
本発明に係る発光デバイスでは、好ましくは、平面視において、発光部は、光源よりも大面積である。 In the light emitting device according to the present invention, preferably, the light emitting section has a larger area than the light source in plan view.
本発明に係る発光デバイスでは、発光部からは、好ましくは、量子ドットの発光と、光源から出射されて発光部を透過した光との混合光が出射する。 In the light emitting device according to the present invention, the light emitting section preferably emits mixed light of the light emission of the quantum dots and the light emitted from the light source and transmitted through the light emitting section.
本発明によれば、量子ドットを用いた発光デバイスであって、色調むらの小さな発光デバイスを提供することができる。 According to the present invention, it is possible to provide a light emitting device using quantum dots and having a small color unevenness.
以下、本発明を実施した好ましい形態の一例について説明する。但し、下記の実施形態は、単なる例示である。本発明は、下記の実施形態に何ら限定されない。 Hereinafter, an example of a preferable embodiment in which the present invention is implemented will be described. However, the following embodiment is merely an example. The present invention is not limited to the following embodiments.
また、実施形態等において参照する各図面において、実質的に同一の機能を有する部材は同一の符号で参照することとする。また、実施形態等において参照する図面は、模式的に記載されたものである。図面に描画された物体の寸法の比率などは、現実の物体の寸法の比率などとは異なる場合がある。図面相互間においても、物体の寸法比率等が異なる場合がある。具体的な物体の寸法比率等は、以下の説明を参酌して判断されるべきである。 In each drawing referred to in the embodiment and the like, members having substantially the same function are referred to by the same reference numerals. The drawings referred to in the embodiments and the like are schematically described. A ratio of dimensions of an object drawn in a drawing may be different from a ratio of dimensions of an actual object. The dimensional ratio of the object may be different between the drawings. The specific dimensional ratio of the object should be determined in consideration of the following description.
(第1の実施形態)
図1は、第1の実施形態に係る発光デバイス1の模式的断面図である。
(First embodiment)
FIG. 1 is a schematic cross-sectional view of a
発光デバイス1は、励起光が入射したときに励起光とは異なる波長の光を出射するデバイスである。発光デバイス1は、励起光と、励起光の照射により生じた光との混合光を出射するものであってもよい。
The
発光デバイス1は、デバイス本体10を有する。デバイス本体10は、第1の部材11と、第2の部材12とを有する。第2の部材12は、第1の部材11の上に設けられている。第2の部材12には、第1の部材11に開口する貫通孔12aが設けられている。この貫通孔12aにより凹部13が構成されている。なお、貫通孔12aは、第1の部材11側に向かって先細っている。このため、凹部13の側壁13aは、第1の部材11の主面に対して傾斜している。
The
デバイス本体10は、どのような材料によって構成されていてもよい。デバイス本体10は、例えば、低温同時焼成セラミックス等のセラミックス、金属、樹脂、ガラス等により構成されていてもよい。第1の部材11を構成している材料と、第2の部材12を構成している材料とは、同じであってもよいし、異なっていてもよい。
The
デバイス本体10の凹部13の底壁13bの上には、光源20が配されている。光源20は、例えば、LED(Light Emitting Diode)素子、LD(Laser Diode)素子等により構成することができる。本実施形態では、光源20がLEDにより構成されている例について説明する。
The
凹部13内には、発光部30が配されている。この発光部30と光源20とは、凹部13に収容されている。発光部30は、光源20からの光が入射するように配されている。具体的には、発光デバイス1では、発光部30は、カバー部材40の凹部13側の表面の上に設けられている。発光部30は、光源20の上方において、光源20を覆うように配されている。
A
光源20は、発光部30に対して発散光を出射する。光源20は、発光部30に含まれる量子ドットの励起波長の光を発光部30に対して出射する。なお、光源20から出射される光は、量子ドットの励起波長の光のみである必要は必ずしもない。光源20から出射される光は、例えば、量子ドットの励起波長の光に加え、それ以外の波長の光を含んでいてもよい。
The
平面視において、光源20は、発光部30の中央部に配されている。光源20は、発光部30の厚み方向に延びる中心線Cと重なるように配されている。発光部30は、光源20よりも大面積である。発光部30の面積は、光源20の面積の2倍~400倍であることが好ましく、20倍~75倍であることがより好ましい。発光部30の面積が小さすぎると、平面視において、発光部30を通過して出射する部分と発光部30を通過せずに出射する部分とが存在しやすくなり、色調むらが大きくなる。一方、発光部30の面積が大きすぎると、発光部30の周辺部に光源20から出射する光が照射されにくくなり、色調むらが大きくなる。
In plan view, the
発光部30は、量子ドットを含む。発光部30は、1種類の量子ドットを含んでいてもよいし、複数種類の量子ドットを含んでいてもよい。
The
なお、量子ドットは、量子ドットの励起光が入射したときに、励起光とは異なる波長の光を出射する。量子ドットから出射される光の波長は、量子ドットの粒子径に依存する。すなわち、量子ドットの粒子径を変化させることにより得られる光の波長を調整することができる。このため、量子ドットの粒子径は、得ようとする光の波長に応じた粒子径とされている。量子ドットの粒子径は、通常、2nm~10nm程度である。 The quantum dot emits light having a wavelength different from that of the excitation light when the quantum dot excitation light is incident. The wavelength of the light emitted from the quantum dot depends on the particle diameter of the quantum dot. That is, the wavelength of the light obtained by changing the particle diameter of the quantum dots can be adjusted. For this reason, the particle diameter of a quantum dot is made into the particle diameter according to the wavelength of the light to obtain. The particle size of the quantum dots is usually about 2 nm to 10 nm.
例えば、波長300nm~440nmの紫外~近紫外の励起光を照射すると青色の可視光(波長440nm~480nmの蛍光)を発する量子ドットの具体例としては、粒子径が2.0nm~3.0nm程度のCdSe/ZnSの微結晶などが挙げられる。波長300nm~440nmの紫外~近紫外の励起光や波長440nm~480nmの青色の励起光を照射すると緑色の可視光(波長が500nm~540nmの蛍光)を発する量子ドットの具体例としては、粒子径が3.0nm~3.3nm程度のCdSe/ZnSの微結晶などが挙げられる。波長300nm~440nmの紫外~近紫外の励起光や波長440nm~480nmの青色の励起光を照射すると黄色の可視光(波長が540nm~595nmの蛍光)を発する量子ドットの具体例としては、粒子径が3.3nm~4.5nm程度のCdSe/ZnSの微結晶などが挙げられる。波長300nm~440nmの紫外~近紫外の励起光や波長440nm~480nmの青色の励起光を照射すると赤色の可視光(波長が600nm~700nmの蛍光)を発する量子ドットの具体例としては、粒子径が4.5nm~10nm程度のCdSe/ZnSの微結晶などが挙げられる。 For example, as a specific example of a quantum dot that emits blue visible light (fluorescence with a wavelength of 440 nm to 480 nm) when irradiated with excitation light of ultraviolet to near ultraviolet with a wavelength of 300 nm to 440 nm, the particle diameter is about 2.0 nm to 3.0 nm. And CdSe / ZnS microcrystals. Specific examples of quantum dots that emit green visible light (fluorescence having a wavelength of 500 nm to 540 nm) when irradiated with ultraviolet to near ultraviolet excitation light having a wavelength of 300 nm to 440 nm or blue excitation light having a wavelength of 440 nm to 480 nm include particle diameters. CdSe / ZnS microcrystals having a thickness of about 3.0 nm to 3.3 nm. Specific examples of quantum dots that emit yellow visible light (fluorescence having a wavelength of 540 nm to 595 nm) when irradiated with ultraviolet to near ultraviolet excitation light having a wavelength of 300 nm to 440 nm or blue excitation light having a wavelength of 440 nm to 480 nm include particle diameters. And CdSe / ZnS microcrystals having a thickness of about 3.3 nm to 4.5 nm. Specific examples of quantum dots that emit red visible light (fluorescence with a wavelength of 600 nm to 700 nm) when irradiated with ultraviolet to near ultraviolet excitation light with a wavelength of 300 nm to 440 nm or blue excitation light with a wavelength of 440 nm to 480 nm include particle diameters. CdSe / ZnS microcrystals having a thickness of about 4.5 nm to 10 nm.
本実施形態では、発光部30は、固体である。具体的には、発光部30は、量子ドットが分散した樹脂を含む。量子ドットは、分散媒中に略均一に分散していることが好ましい。量子ドットを分散媒中に略均一に分散させることで、発光部30からの光量の面内ばらつきを抑えることができる。好ましく用いられる樹脂の具体例としては、例えば、シリコーン樹脂、エポキシ樹脂、アクリル樹脂等が挙げられる。
In the present embodiment, the
なお、発光部30からの光量の面内ばらつきをより抑えるために、発光部30は、樹脂と量子ドットとの他に、例えば、光分散剤等をさらに含んでいてもよい。
In addition, in order to further suppress in-plane variation in the amount of light from the
なお、発光部30は、複数層の発光層の積層体により構成されていてもよい。その場合、複数層の発光層は、相互に異なる波長の光を出射する量子ドットを含む複数の発光層を含んでいてもよい。例えば、第1の波長の光を出射する量子ドットを含む第1の発光層と、第2の波長の光を出射する量子ドットを含む第2の発光層とを含む複数の発光層の積層体により発光部30を構成してもよい。
In addition, the
凹部13は、カバー部材40により塞がれている。このカバー部材40とデバイス本体10とは、接合されている。カバー部材40とデバイス本体10とによって封止空間50が区画形成されている。光源20と発光部30とはこの封止空間50内に封止されている。
The
ところで、発光部からの光量の面内ばらつきを少なくするなどの観点からは、発光部を均一な厚みに設けることが好ましいようにも考えられる。しかしながら、均一な厚みの発光部を設けた場合、発光部のうち、光源の直上に位置している部分と、それ以外の部分とで、発光部に入射した光の発光部内における光路長が異なる。例えば、発光部のうち、光源の直上に位置している部分には、発光部への光の入射角が垂直となる。すなわち、光源の直上に位置している部分では、発光部への光の入射角は0°である。よって、光源の直上に位置している部分では、光路長が短くなる。発光部への光の入射角は、平面視において、光源から離れるほど大きくなる。よって、平面視において光源から離れるに従って、光路長が長くなる。このため、発光部が均一厚みである場合は、発光部への入射光の発光部内における光路長は、平面視において、光源から離れるほど長くなる。よって、平面視において、発光部のうち、光源に近い部分においては、光路長が短くなる分、量子ドットにより吸収される励起光の光量が少なくなり、量子ドットからの発光の光量も少なくなる。一方、発光部のうち、光源から離れた部分においては、光路長が長くなる分、量子ドットにより吸収される励起光の光量が多くなり、量子ドットからの発光の光量も多くなる。このため、光源からの光と量子ドットの発光との混合光が出射する発光デバイスにおいては、発光部から出射される光の色調は、発光部の位置によって異なる。具体的には、発光部のうち、平面視において光源から近い部分と、離れた部分とで、発光デバイスから出射される光の色調が異なる。 By the way, from the viewpoint of reducing in-plane variation in the amount of light from the light emitting part, it may be preferable to provide the light emitting part with a uniform thickness. However, when the light emitting part having a uniform thickness is provided, the optical path length in the light emitting part of the light incident on the light emitting part is different between the part located immediately above the light source and the other part of the light emitting part. . For example, the incident angle of light to the light emitting unit is perpendicular to the portion of the light emitting unit located immediately above the light source. That is, in the portion located immediately above the light source, the incident angle of light to the light emitting portion is 0 °. Therefore, the optical path length is shortened in the portion located immediately above the light source. The incident angle of light to the light emitting unit increases as the distance from the light source increases in plan view. Therefore, the optical path length increases as the distance from the light source increases in plan view. For this reason, when the light emitting part has a uniform thickness, the optical path length in the light emitting part of the incident light to the light emitting part becomes longer as the distance from the light source in plan view. Therefore, in a plan view, in the portion near the light source in the light emitting unit, the amount of excitation light absorbed by the quantum dots is reduced by the amount of the optical path length, and the amount of light emitted from the quantum dots is also reduced. On the other hand, in the part away from the light source in the light emitting unit, the amount of excitation light absorbed by the quantum dots increases as the optical path length increases, and the amount of light emitted from the quantum dots also increases. For this reason, in a light emitting device that emits mixed light of light from a light source and light emitted from a quantum dot, the color tone of light emitted from the light emitting unit varies depending on the position of the light emitting unit. Specifically, the color tone of light emitted from the light emitting device is different between a portion near the light source and a portion away from the light source in the plan view.
発光デバイス1では、発光部30の少なくとも周縁部において、発光部30の厚みが外側に向かって漸減している。このため、発光部30の周縁部における光路長が短い。よって、発光部30の中央部における光路長と、発光部30の周縁部における光路長との差が小さい。従って、発光部30の中央部から出射される光の色調と、発光部30の周縁部から出射される光の色調との差が小さい。よって、発光デバイス1では、色調むらが小さい。
In the
発光デバイス1の色調むらをより小さくする観点からは、光源から出射した光の発光部30における光路長が、発光部30のどの部分においても略一定であることが好ましい。従って、例えば、本実施形態のように、発光部30の厚みは、平面視における中心から外側に向かって単調減少していることが好ましい場合もある。
From the viewpoint of further reducing the color tone unevenness of the
以下、本発明の好ましい実施形態の他の例について説明する。以下の説明において、上記第1の実施形態と実質的に共通の機能を有する部材を共通の符号で参照し、説明を省略する。 Hereinafter, another example of the preferred embodiment of the present invention will be described. In the following description, members having substantially the same functions as those of the first embodiment are referred to by the same reference numerals, and description thereof is omitted.
(第2の実施形態)
図2は、第2の実施形態に係る発光デバイス1aの模式的断面図である。
(Second Embodiment)
FIG. 2 is a schematic cross-sectional view of a
第1の実施形態に係る発光デバイス1では、発光部30の厚みは、平面視における中心から外側に向かって単調減少していることが好ましい例について説明した。但し、本発明は、この構成に限定されない。例えば、図2に示すように、発光デバイス1aでは、発光部30の周縁部を除いた部分の厚みは、略一定である。発光部30の厚みは、周縁部において外側に向かって漸減している。
In the
なお、発光部の一部において、外側に向かって厚みが増加している部分が存在していてもよい。 In addition, in a part of the light emitting portion, there may be a portion where the thickness increases toward the outside.
(第3の実施形態)
図3は、第3の実施形態に係る発光デバイス1bの模式的断面図である。
(Third embodiment)
FIG. 3 is a schematic cross-sectional view of a
第1及び第2の実施形態では、カバー部材40の凹部13内側の表面に発光部30が形成されている例について説明した。但し、本発明は、この構成に限定されない。図3に示すように、発光デバイス1bでは、発光部30は、凹部13内に、光源20を塞ぐように設けられている。この場合であっても、発光部30の少なくとも周縁部において、発光部30の厚みが外側に向かって漸減するように構成することによって色調むらを小さくすることができる。
1st and 2nd embodiment demonstrated the example in which the
(第4の実施形態)
図4は、第3の実施形態に係る発光デバイス1cの模式的断面図である。
(Fourth embodiment)
FIG. 4 is a schematic cross-sectional view of a
図4に示すように、発光デバイス1cは、セル60を備えている。セル60は、第1の主壁部61と、第2の主壁部62と、側壁部63とを有する。第1の主壁部61と、第2の主壁部62とは、間隔を置いて対向している。側壁部63は、第1の主壁部61と第2の主壁部62との間に設けられている。側壁部63は、第1及び第2の主壁部61,62のそれぞれと接合されている。側壁部63と、第1及び第2の主壁部61,62とは、例えば、陽極接合、溶接、または無機接合材を用いて接合されていてもよい。
As shown in FIG. 4, the
第1及び第2の主壁部61,62は、例えば、ガラス、セラミックス等により構成することができる。側壁部63は、例えば、ガラス、セラミックス、金属、金属コーティング層により覆われたガラス材又はセラミック材等により構成することができる。
The first and second
発光部30は、第1及び第2の主壁部61,62のそれぞれの内壁の上に設けられている。具体的には、本実施形態では、光源20とは反対側に位置する第1の主壁部61の内壁の上に設けられている。もっとも、発光部は、光源側の第2の主壁部の内壁の上に設けられていてもよい。
The
本実施形態のように、発光部30を光源20とは離間したセル60内に配することにより、光源20からの熱が発光部30に伝わり難い。従って、発光部30の熱劣化を抑制することができる。
The heat from the
(第5の実施形態)
図5は、第5の実施形態に係る発光デバイスの模式的断面図である。
(Fifth embodiment)
FIG. 5 is a schematic cross-sectional view of a light emitting device according to a fifth embodiment.
第1及び第2の実施形態では、光源20と発光部30との間に位置する封止空間50が空間により構成されている例について説明した。但し、本発明は、この構成に限定されない。
1st and 2nd embodiment demonstrated the example in which the sealing
図5に示すように、第5の実施形態に係る発光デバイス1dでは、封止空間50に樹脂70が充填されている。この場合、樹脂70と発光部30との間の屈折率差、及び樹脂70と光源20との間の屈折率差を小さくすることができる。従って、光の出射効率を向上することができる。
As illustrated in FIG. 5, in the
樹脂70は、例えば、シリコーン樹脂、エポキシ樹脂、アクリル樹脂等により構成することができる。
樹脂70は、光分散剤を含んでいてもよい。この場合、光源20から発光部30への光の均一性をさらに高めることができる。
1,1a,1b,1c,1d 発光デバイス
10 デバイス本体
11 第1の部材
12 第2の部材
12a 貫通孔
13 凹部
13a 側壁
13b 底壁
20 光源
30 発光部
40 カバー部材
50 封止空間
60 セル
61 第1の主壁部
62 第2の主壁部
70 樹脂
63 側壁部
C 中心線
1, 1a, 1b, 1c, 1d
Claims (6)
前記発光部の平面視における中央部に配されており、前記発光部に対して前記量子ドットの励起波長の光を出射する光源と、
を備え、
前記発光部の少なくとも周縁部において、前記発光部の厚みが外側に向かって漸減している、発光デバイス。 A light emitting unit including quantum dots;
A light source that is disposed at a central portion in a plan view of the light emitting unit, and emits light having an excitation wavelength of the quantum dots to the light emitting unit;
With
The light-emitting device in which the thickness of the light-emitting part gradually decreases toward the outside at least at the peripheral part of the light-emitting part.
前記凹部を覆い、前記デバイス本体と共に前記光源及び前記発光部を封止するカバー部材と、
を備え、
前記発光部は、前記カバー部材の前記凹部側の表面の上に設けられている、請求項1に記載の発光デバイス。 A device body having a recess for accommodating the light source and the light emitting unit;
A cover member that covers the recess and seals the light source and the light emitting unit together with the device body;
With
The light emitting device according to claim 1, wherein the light emitting unit is provided on a surface of the cover member on the concave side.
前記第1の主壁部と間隔を置いて対向している第2の主壁部と、
前記第1の主壁部と前記第2の主壁部とを接続している側壁部と、
を有し、前記光源とは離間して配されたセルをさらに備え、
前記発光部は、前記セル内において、前記第1または第2の主壁部の上に設けられている、請求項1に記載の発光デバイス。 A first main wall,
A second main wall portion facing the first main wall portion at an interval;
A side wall portion connecting the first main wall portion and the second main wall portion;
And further comprising a cell disposed apart from the light source,
The light emitting device according to claim 1, wherein the light emitting unit is provided on the first or second main wall in the cell.
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| JP2016527714A JPWO2015190242A1 (en) | 2014-06-09 | 2015-05-19 | Light emitting device |
| CN201580013410.2A CN106133927A (en) | 2014-06-09 | 2015-05-19 | Luminescent device |
| KR1020167025770A KR20170016815A (en) | 2014-06-09 | 2015-05-19 | Light-emitting device |
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| JP (1) | JPWO2015190242A1 (en) |
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- 2015-05-19 WO PCT/JP2015/064305 patent/WO2015190242A1/en not_active Ceased
- 2015-05-19 KR KR1020167025770A patent/KR20170016815A/en not_active Withdrawn
- 2015-05-19 CN CN201580013410.2A patent/CN106133927A/en active Pending
- 2015-05-19 JP JP2016527714A patent/JPWO2015190242A1/en active Pending
- 2015-05-29 TW TW104117511A patent/TW201603330A/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006199963A (en) * | 2005-01-20 | 2006-08-03 | Samsung Electronics Co Ltd | Quantum dot phosphor and method for producing the same |
| US20110303940A1 (en) * | 2010-06-14 | 2011-12-15 | Hyo Jin Lee | Light emitting device package using quantum dot, illumination apparatus and display apparatus |
| WO2012102107A1 (en) * | 2011-01-28 | 2012-08-02 | 昭和電工株式会社 | Composition containing quantum dot fluorescent body, molded body of quantum dot fluorescent body dispersion resin, structure containing quantum dot fluorescent body, light-emitting device, electronic apparatus, mechanical device, and method for producing molded body of quantum dot fluorescent body dispersion resin |
| US20140103384A1 (en) * | 2011-06-29 | 2014-04-17 | Panasonic Corporation | Light-emitting device |
| WO2013001687A1 (en) * | 2011-06-30 | 2013-01-03 | パナソニック株式会社 | Light-emitting device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017224780A (en) * | 2016-06-17 | 2017-12-21 | 日本電気硝子株式会社 | Wavelength conversion member, method for manufacturing the same, and light-emitting device |
| KR20230039663A (en) | 2020-07-16 | 2023-03-21 | 니폰 덴키 가라스 가부시키가이샤 | Protective cap, electronic device and manufacturing method of protective cap |
| KR20230039667A (en) | 2020-07-16 | 2023-03-21 | 니폰 덴키 가라스 가부시키가이샤 | Electronic device and manufacturing method of electronic device |
| KR20240031317A (en) | 2021-07-05 | 2024-03-07 | 니폰 덴키 가라스 가부시키가이샤 | Manufacturing method of glass substrate and airtight package with sealing material layer attached |
| KR20240081444A (en) | 2021-10-22 | 2024-06-07 | 니폰 덴키 가라스 가부시키가이샤 | Method of manufacturing protective caps, electronic devices and protective caps |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170016815A (en) | 2017-02-14 |
| TW201603330A (en) | 2016-01-16 |
| CN106133927A (en) | 2016-11-16 |
| JPWO2015190242A1 (en) | 2017-04-20 |
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