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WO2015183356A3 - Passive waveguide structure for optoelectronic devices - Google Patents

Passive waveguide structure for optoelectronic devices Download PDF

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Publication number
WO2015183356A3
WO2015183356A3 PCT/US2015/017022 US2015017022W WO2015183356A3 WO 2015183356 A3 WO2015183356 A3 WO 2015183356A3 US 2015017022 W US2015017022 W US 2015017022W WO 2015183356 A3 WO2015183356 A3 WO 2015183356A3
Authority
WO
WIPO (PCT)
Prior art keywords
low loss
gain section
waveguide structure
loss waveguide
optical mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2015/017022
Other languages
French (fr)
Other versions
WO2015183356A2 (en
Inventor
Catherine Genevieve Caneau
Feng Xie
Chung-En Zah
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thorlabs Quantum Electronics Inc
Original Assignee
Thorlabs Quantum Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thorlabs Quantum Electronics Inc filed Critical Thorlabs Quantum Electronics Inc
Priority to CH01088/16A priority Critical patent/CH710975B1/en
Priority to CN201580020836.0A priority patent/CN106233550B/en
Priority to DE112015001051.3T priority patent/DE112015001051B4/en
Publication of WO2015183356A2 publication Critical patent/WO2015183356A2/en
Publication of WO2015183356A3 publication Critical patent/WO2015183356A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

Disclosed is a semiconductor optical emitter having an optical mode and a gain section, the emitter comprising a low loss waveguide structure made of two alternating layers of semiconductor materials A and B, having refractive indexes of Na and Nb, respectively, with an effective index No of the optical mode in the low loss waveguide between Na and Nb, wherein No is within a 5% error margin of identical to a refractive index of the gain section and wherein the gain section is butt-jointed with the low loss waveguide, and wherein the size and shape of the optical mode(s) in the low loss waveguide and gain section are within a 10% error margin of equal. Desirably, at least one of the semiconductor materials A and B has a sufficiently large band gap that the passive waveguide structure blocks current under a voltage bias of 15 V.
PCT/US2015/017022 2014-02-28 2015-02-23 Passive waveguide structure with alternating gainas/alinas layers for mid-infrared optoelectronic devices Ceased WO2015183356A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CH01088/16A CH710975B1 (en) 2014-02-28 2015-02-23 Passive waveguide structure with alternating GaInAs / AlInAs layers for mid-infrared optoelectronic devices.
CN201580020836.0A CN106233550B (en) 2014-02-28 2015-02-23 Passive Waveguide Structures for Optoelectronic Devices
DE112015001051.3T DE112015001051B4 (en) 2014-02-28 2015-02-23 Passive waveguide structure with alternating GaInAs / AlInAs layers for optoelectronic devices in the middle infrared

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461946700P 2014-02-28 2014-02-28
US61/946,700 2014-02-28

Publications (2)

Publication Number Publication Date
WO2015183356A2 WO2015183356A2 (en) 2015-12-03
WO2015183356A3 true WO2015183356A3 (en) 2016-02-18

Family

ID=54700021

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2015/017022 Ceased WO2015183356A2 (en) 2014-02-28 2015-02-23 Passive waveguide structure with alternating gainas/alinas layers for mid-infrared optoelectronic devices

Country Status (4)

Country Link
CN (1) CN106233550B (en)
CH (1) CH710975B1 (en)
DE (1) DE112015001051B4 (en)
WO (1) WO2015183356A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3726674B1 (en) * 2017-12-15 2024-04-24 HORIBA, Ltd. Semiconductor laser
WO2025027853A1 (en) * 2023-08-03 2025-02-06 Nippon Telegraph And Telephone Corporation Semiconductor laser and method for generating optical spikes

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2134007C1 (en) * 1998-03-12 1999-07-27 Государственное предприятие Научно-исследовательский институт "Полюс" Semiconductor optical amplifier
US20050111079A1 (en) * 2001-10-04 2005-05-26 Shih-Yuan Wang Semiconductor optical amplifier using laser cavity energy to amplify signal and method of fabrication thereof
WO2006031984A2 (en) * 2004-09-16 2006-03-23 Corning Incorporated Method of manufacturing an inp based vertical cavity surface emitting laser and device produced therefrom
US20130221223A1 (en) * 2012-02-28 2013-08-29 Catherine Genevieve Caneau Surface emitting multiwavelength distributed-feedback concentric ring lasers
WO2013142481A2 (en) * 2012-03-19 2013-09-26 Corning Incorporated Waveguide structure for mid-ir multiwavelength concatenated distributed-feedback laser with an active core made of cascaded stages

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6891202B2 (en) * 2001-12-14 2005-05-10 Infinera Corporation Oxygen-doped Al-containing current blocking layers in active semiconductor devices
CN1588717A (en) * 2004-07-16 2005-03-02 北京工业大学 High efficiency high power multiple wave length tunnel cascade multiple active area vertical chamber surface transmitting laser
US7764721B2 (en) * 2005-12-15 2010-07-27 Palo Alto Research Center Incorporated System for adjusting the wavelength light output of a semiconductor device using hydrogenation
US20070217472A1 (en) * 2006-03-14 2007-09-20 Doug Collins VCSEL semiconductor devices with mode control
KR20100072534A (en) * 2008-12-22 2010-07-01 한국전자통신연구원 Semeconductor laser device
GB201002391D0 (en) * 2010-02-12 2010-03-31 Ct For Integrated Photonics Th Semiconductor device
US8514902B2 (en) * 2011-03-17 2013-08-20 Corning Incorporated P-type isolation between QCL regions
WO2014018776A1 (en) 2012-07-26 2014-01-30 Massachusetts Institute Of Technology Photonic integrated circuits based on quantum cascade structures

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2134007C1 (en) * 1998-03-12 1999-07-27 Государственное предприятие Научно-исследовательский институт "Полюс" Semiconductor optical amplifier
US20050111079A1 (en) * 2001-10-04 2005-05-26 Shih-Yuan Wang Semiconductor optical amplifier using laser cavity energy to amplify signal and method of fabrication thereof
WO2006031984A2 (en) * 2004-09-16 2006-03-23 Corning Incorporated Method of manufacturing an inp based vertical cavity surface emitting laser and device produced therefrom
US20130221223A1 (en) * 2012-02-28 2013-08-29 Catherine Genevieve Caneau Surface emitting multiwavelength distributed-feedback concentric ring lasers
WO2013142481A2 (en) * 2012-03-19 2013-09-26 Corning Incorporated Waveguide structure for mid-ir multiwavelength concatenated distributed-feedback laser with an active core made of cascaded stages

Also Published As

Publication number Publication date
WO2015183356A2 (en) 2015-12-03
DE112015001051B4 (en) 2020-06-18
CN106233550B (en) 2019-05-07
CH710975B1 (en) 2019-09-30
DE112015001051T5 (en) 2016-12-01
CN106233550A (en) 2016-12-14

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