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WO2015182881A1 - Matériau conducteur en film mince directement plaqué - Google Patents

Matériau conducteur en film mince directement plaqué Download PDF

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Publication number
WO2015182881A1
WO2015182881A1 PCT/KR2015/004133 KR2015004133W WO2015182881A1 WO 2015182881 A1 WO2015182881 A1 WO 2015182881A1 KR 2015004133 W KR2015004133 W KR 2015004133W WO 2015182881 A1 WO2015182881 A1 WO 2015182881A1
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Prior art keywords
conductive thin
thin film
plating
film material
flexible film
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Ceased
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PCT/KR2015/004133
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English (en)
Korean (ko)
Inventor
문길환
지성민
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Hicel Co ltd
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Hicel Co ltd
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Publication date
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Publication of WO2015182881A1 publication Critical patent/WO2015182881A1/fr
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Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
    • C23C18/2073—Multistep pretreatment
    • C23C18/208—Multistep pretreatment with use of metal first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/22—Roughening, e.g. by etching
    • C23C18/24—Roughening, e.g. by etching using acid aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28—Sensitising or activating
    • C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating

Definitions

  • the present invention relates to a conductive thin film material and a method of manufacturing the same, and in detail, the flexible copper film laminated film (FCCL), which is a raw material used when manufacturing an electronic component in which a flexible circuit board or an electrical pattern is formed, has been partially pretreated.
  • FCCL flexible copper film laminated film
  • the present invention relates to a conductive thin film material and a method for manufacturing the same, which may be omitted, may be shortened in mass production and mass produced, and may be directly plated with electrical characteristics of a flexible thin film.
  • FCCL Flexible Copper Clad Laminated
  • Polyimide (PI) is used as a main raw material for flexible copper-clad laminated films, and products using high performance polymer (LCP) have recently been developed.
  • FCCL flexible copper clad laminated film
  • Conventional methods of manufacturing a flexible copper clad laminated film include: 1 forming an adhesive layer on a base substrate mainly made of polyimide, and then attaching copper foil, and 2 sputtering a thinner such as nickel to secure adhesion to copper. After forming by plating, plating, and plating to form a film, 3 The method of treating the seed layer by electroless chemical copper and then adding electroplating is used. After the formation, it serves to mount electronic devices such as IC chips or interconnect LCD panels and PCB boards.
  • FIG. 1 is a cross-sectional view showing a representative example of a conventional flexible copper clad laminated film structure, as shown in the general flexible copper clad laminated film layer 11 made of a dissimilar metal such as Ni-Cr alloy on the base film 10 ) And the copper sputtering layer 12 and the copper plating layer 13 have a structure in which they are sequentially laminated.
  • the base film 100 a polyimide resin having a similar thermal expansion coefficient and excellent heat resistance to copper foil-type copper layers for stability of IC chip bonding and the like is widely used, and the copper plating layer 13 is an electroplating method. It is formed on the copper sputtering layer 12 through.
  • Degreasing step of removing the foreign material on the surface of the base film 100 and adsorbing a positive charge on the surface to facilitate the adhesion of the seed layer after the formation of the plating layer on the conventional flexible copper foil laminated film In order to improve the adhesion of the surface of the base film 100, there is a process of treating the surface.
  • the degreasing process generally proceeds by dipping the base film 100 in a degreasing tank containing a degreasing agent such as an organic solvent, and if degreasing is insufficient, the cause of defects such as poor adhesion, poor gloss, rough plating, and swelling. This is a very important process in the plating preparation.
  • a degreasing agent such as an organic solvent
  • the surface treatment is specifically used a chemical method of treating the surface by corona discharge or plasma, and a physical method through the bar coater coating or printing of epoxy, acrylic, urethane primer, and also affects the adhesion of the plating layer It can be said that it is an important process, and a lot of effort and time were required for the degreasing process and the surface treatment process.
  • Patent Document 1 Korean Registered Patent No. 10-1147076 (2012.05.17. Notification)
  • the present invention has been created to solve the above problems, the object of the present invention in manufacturing a material that can replace the conventional flexible copper clad laminated film (FCCL) for the various flexible film materials in the existing manufacturing process essential process It is to provide a conductive thin film material and a method for manufacturing the same by direct plating that can secure excellent physical properties while simplifying the process by eliminating a process such as forming a phosphorous adhesive layer, a seed layer or a primer treatment.
  • the present invention provides a method of manufacturing a conductive thin film material, comprising: preparing a flexible film of an insulating synthetic resin material; Modifying the surface by removing the foreign matter by compressing and spraying a solution having an acidic or alkaline solution on the surface of the flexible film into particles in a range of 10 nm to 10 ⁇ m; A pre-dip step of immersing the flexible film in an acid solution; Adsorbing a catalyst in anion form on the surface of the flexible film after washing with water; Activating the catalyst adsorbed on the flexible film and forming a plating layer by electroless plating; Characterized in that consists of.
  • the flexible film of the insulating synthetic resin material is polyimide, polyethylene terephthalate, polyethylene naphthalene, polybutylene terephthalate, polysulfone, polyether, polyetherimide, polycarbonate, polymethyl methacrylate, polyethylene naphthalate, acrylic resin It may be selected from heat-resistant epoxy (Epoxy), vinyl acetate resin (EVA), butyl rubber resin, polyarylate.
  • the thickness of the plating layer is 0.3 ⁇ m to 15 ⁇ m
  • the metal used for electroless plating is preferably any one selected from Cu, Sn, Ag, Au, Ni or alloys thereof.
  • the catalyst is preferably any one selected from Au, Ag, Pt, Cu, Ni, Fe, Pd, Co or alloys thereof.
  • the conductive thin film material by direct plating of the present invention is characterized in that it is produced by the above-described manufacturing method.
  • the present invention replaces the conventional flexible copper clad laminated film (FCCL), but some pretreatment steps are omitted, thereby simplifying the manufacturing process and enabling mass production, and reducing material costs for pretreatment.
  • FCCL flexible copper clad laminated film
  • FIG. 1 is a cross-sectional view showing a representative example of a conventional flexible copper foil laminated film structure
  • FIG. 2 is a cross-sectional view showing a cross section of a conductive thin film material by direct plating according to the present invention
  • FIG. 3 is a flow chart showing a method of manufacturing a conductive thin film material by direct plating according to a preferred embodiment of the present invention
  • FIG. 4 is a view showing a method for measuring adhesion of a plating layer and a reference value
  • 5 and 6 is a view showing the test results of the conductive thin film material by direct plating produced through the present invention through the adhesion measuring method of FIG.
  • FIG. 7 is a view showing a case of implementing a digitizer circuit board using a conductive thin film material by direct plating prepared through the present invention
  • FIG. 8 is a diagram illustrating a pattern measurement result of a digitizer circuit board implemented in FIG. 7.
  • FIG. 2 is a cross-sectional view showing a cross section of a conductive thin film material by direct plating according to the present invention
  • Figure 3 is a flow chart showing a method of manufacturing a conductive thin film material by direct plating according to a preferred embodiment of the present invention, the present invention Proceed through the same process.
  • the first step (S 110) is to prepare a flexible film of insulating synthetic resin material, the flexible film can be basically applied polyimide (PI), but in addition to various flexible film materials having PET, PEN and similar physical properties Can be used.
  • PI polyimide
  • the flexible film include polyimide, polyethylene terephthalate, polyethylene naphthalene, polybutylene terephthalate, polysulfone, polyether, polyetherimide, polycarbonate, polymethyl methacrylate, polyethylene naphthalate, acrylic resin, heat resistant epoxy (Epoxy), vinyl acetate resin (EVA), butyl rubber resin, polyarylate may be selected.
  • the second step (S 120) is a step of modifying the surface while removing foreign substances by spraying a solution having an acidic or alkaline on the surface of the flexible film at a high pressure so as to spray the injection into particles in the range of 10nm to 10 ⁇ m.
  • the acidity of the solution sprayed on the surface of the flexible film has a strong acid or strong alkalinity in the range of PH 2 ⁇ 5 or PH 9 ⁇ 14, depending on the type of flexible film used is appropriately changed within the above-described range.
  • the injection conditions are adjusted according to the surface modification state, the injection pressure is 0.5 to 10 MPa, the injection amount is 0.1 to 5L / min, the injection angle is adjusted in the range of 40 to 85 °.
  • the single-sided plating is sprayed by arranging the nozzles only on one side with respect to the flexible film, during the double-sided plating, the surface is modified on both sides of the flexible film in the array.
  • the plating layer 120 is formed on both sides of the flexible film 110.
  • the process was carried out by dipping the film in the degreasing bath, but in the present invention, the surface of the film is directly sprayed with a high pressure or a strong acidic solution on the surface of the flexible film through a nozzle configured to compress and spray particles in the range of 10 nm to 10 ⁇ m.
  • a nozzle configured to compress and spray particles in the range of 10 nm to 10 ⁇ m.
  • the third step (S 130) is a pre-dip process in which the flexible film is immersed in an acid solution to remove the oxide film generated during the process, and then to give wetness to facilitate the adsorption of the catalyst, and to a 10% concentration of nitric acid or sulfuric acid solution. Soak for about 1 minute 30 seconds at room temperature.
  • the fourth step (S 140) is a process of adsorbing the catalyst in the form of anion on the surface of the flexible film after washing with water, so that the catalyst is adsorbed on the surface of the flexible film by immersing the flexible film after pre-dip in the aqueous solution of the catalyst in the form of anion. .
  • the catalyst may be any one selected from Au, Ag, Pt, Cu, Ni, Fe, Pd, Co, or alloys thereof, and preferably a palladium salt may be used.
  • the flexible film is immersed in the aqueous solution for 3 to 5 minutes, and then subjected to electroless copper plating through a drying process.
  • the fifth step (S 150) is a process of activating the catalyst adsorbed on the flexible film to form a plating layer by electroless plating, activating palladium adsorbed in an ionic state to convert to metal palladium to smooth the electroless plating reaction. Let's do it.
  • the electroless plating is performed for 10 minutes to 60 minutes so that an electroless plating layer having a thickness required to be immersed in a plating bath containing a Rossel salt type plating solution including a transition metal salt, a reducing agent, and a complexing agent is formed on the surface of the flexible substrate.
  • This can be carried out by reducing the metal ions by the reducing agent by reducing and depositing the metal on the surface of the flexible film using a plating solution containing a compound containing a metal ion and a reducing agent.
  • metal ions can be reduced by the following reaction formula.
  • the type of the metal used for the electroless plating may be Ag, Cu, Au, Cr, Al, W, Zn, Ni, Fe, Pt, Pb, Sn, Au, etc., these elements are used alone Or two or more kinds may be used in combination.
  • the plating solution used in the electroless plating may include a salt and a reducing agent of a metal to be plated, wherein the reducing agent is formaldehyde, hydrazine or salts thereof, cobalt sulfate (II), formalin, glucose, glyoxyl Acids, hydroxyalkylsulfonic acids or salts thereof, hypophosphoric acids or salts thereof, boron hydride compounds, dialkylamine boranes, and the like, and various reducing agents may be used depending on the type of metal.
  • the reducing agent is formaldehyde, hydrazine or salts thereof, cobalt sulfate (II), formalin, glucose, glyoxyl Acids, hydroxyalkylsulfonic acids or salts thereof, hypophosphoric acids or salts thereof, boron hydride compounds, dialkylamine boranes, and the like, and various reducing agents may be used depending on the type of metal.
  • the electroless plating solution may be prepared by forming a metal salt that generates metal ions, a ligand with the metal ion, and a complexing agent for preventing the metal from being reduced in the liquid phase and making the solution unstable and an electroless plating solution so that the reducing agent is oxidized. pH adjusters to maintain pH.
  • an electroless plating layer is formed by using copper sulfate, formalin, sodium hydroxide, Ethylene Diamin Tera Acetic Acid (EDTA) and an aqueous solution added with 2.2-bipyridyl as an accelerator. can do.
  • EDTA Ethylene Diamin Tera Acetic Acid
  • the electroless plating may use a general horizontal and vertical panel plating apparatus and a roll-to-roll and barrel plating apparatus.
  • the components and plating conditions of the electroless plating solution used were 85% of D / I Water, 10 ⁇ 15% of supplement, 25% -NaOH 2 ⁇ 5%, stabilizer 0.1 ⁇ 1%, 37% formalin 0.5 ⁇ 2%. After air stirring for 10 to 15 minutes, the temperature was plated for 20 to 60 minutes at 50 ⁇ 50 °C, pH 13 or more.
  • the surface adhesion of the plating layer to a resin-based material such as epoxy or polyimide may be excellent compared to general chemical copper.
  • the thickness of the plating layer is 0.3 to 30 ⁇ m, preferably 1 to 15 ⁇ m, more preferably can be formed in 2 to 8 ⁇ m
  • the metal used for the chemical plating is Cu, Sn, Ag, Au, It may be composed of any one selected from Ni or alloys thereof, and preferably Cu, Ag or Ni may be used.
  • FIG. 4 is a diagram illustrating a method and a reference value of the adhesion of the plated layer, showing a specific procedure for measuring the adhesion of the plated layer and the criteria for the adhesion.
  • a cross cutter and scotch tape (3M-610) were used, and the measurement environment was set at room temperature (20 to 30 ° C).
  • a cut line was formed at regular intervals in a horizontal and vertical lattice shape using a cross cutter (YCC-230) on the plating layer. Afterwards, the brush was rubbed about five times in a diagonal direction to remove foreign substances on the surface of the plated layer, and 3M-610 tape was attached to the incision line so that no bubbles were formed, and then quickly peeled off at an angle of 90 degrees after 1 minute and 30 seconds. .
  • the average was calculated after measuring three points per plated layer specimen in this manner, the specific measurement position and measurement standards are as in the accompanying drawings.
  • the measurement standard is 0B where most of the plated surface has fallen to the incision forming part, 1B which is within 35 to 65% of the dropped area, 2B which is within 15 to 35% of the separated surface, and 5B to 15% of the separated surface.
  • Phosphorus 3B, 4B with 5% fallen surface, and 5B with no dropped surface were divided into 6 stages. In the case of 4B ⁇ 5B, the remaining processing was rejected.
  • 5 and 6 is a view showing the test results of the conductive thin film material by direct plating prepared through the present invention through the adhesion measuring method of Figure 4, 10 for the conductive thin film material by direct plating prepared through the present invention The results of measuring adhesion and surface resistance of the plating layer in the manner described above were shown.
  • FIG. 7 is a view showing an example of implementing a digitizer circuit board using a conductive thin film material manufactured by direct plating according to the present invention.
  • the circuit of the digitizer is shown through a patterning method using a printing method.
  • a circuit pattern was printed on the PET film on which the electroless plating layer was formed by using resist ink, and the specification of the resist ink used model name IRE-W0272-K4 and the viscosity was 170,000 cps.
  • the plate making specification for printing is 1000 ⁇ 1,000mm frame, SUS 400 / 18 ⁇ m Mesh, mesh angle is 22.5 °, S / Q speed 60mm / sec, S / L speed: 100mm / sec It printed on condition, and dried by MIR system at the speed of 15 kPa at the temperature of 120 degreeC.
  • the PET film on which the pattern was printed was etched by dipping at room temperature for 4 minutes through diluted iron chloride solution (FeCl 2 ). After washing with water, the resist ink was peeled off using diluted sodium hydroxide (NaOH) solution.
  • FIG. 8 is a diagram illustrating a pattern measurement result of a digitizer circuit board implemented in FIG. 7.
  • the line width and spacing of the pattern for two points were measured, and the line width and spacing on the circuit pattern design film were measured to be 131 mu m and 140 mu m for the first point and 68 mu m and 82 mu m for the second point, respectively.
  • the post-printing pattern of the resist ink was then measured with a line width of 143 ⁇ m and a gap of 128 ⁇ m at the first point, a line width of 92 ⁇ m and a gap of 58 ⁇ m at the second point, an 8% increase in the first point line width and a 9% gap in the design film, The second point showed a change of 26% in line width and a 41% gap in spacing.
  • the pattern was measured with a line width of 150 ⁇ m and an interval of 119 ⁇ m at the first point, and a line width of 9102 ⁇ m and an interval of 58 ⁇ m at the second point, increasing the line width by 13% and reducing the gap by 18% at the first point.
  • the germline point showed a 33% increase in line width and a 41% decrease in spacing.
  • the line resistance measurement resulted in 195 ⁇ at the first point and 27 ⁇ at the second point, indicating that it is suitable for the digitizer.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

Cette invention concerne un matériau conducteur en film mince directement plaqué et son procédé de fabrication. Le matériau conducteur en film mince directement plaqué peut remplacer le matériau stratifié souple gainé de cuivre (FCCL) généralement utilisé comme matière première pour la fabrication de cartes de circuits imprimés souples ou de composants électroniques portant des motifs électriques sur leur surface. En outre, des étapes de pré-traitement sont partiellement omises, simplifiant ainsi les procédés de fabrication et permettant une production en grande série tout en conservant les caractéristiques électriques des films minces souples.
PCT/KR2015/004133 2014-05-28 2015-04-24 Matériau conducteur en film mince directement plaqué Ceased WO2015182881A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2014-0064617 2014-05-28
KR20140064617A KR101468074B1 (ko) 2014-05-28 2014-05-28 직접 도금에 의한 도전성 박막소재 및 이의 제조방법

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WO2015182881A1 true WO2015182881A1 (fr) 2015-12-03

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112969819A (zh) * 2018-11-14 2021-06-15 Ｙｍｔ股份有限公司 电镀积层和印刷电路板
CN114150299A (zh) * 2021-04-27 2022-03-08 天津大学 用于超低轮廓铜箔及其覆铜板制备的化学沉积方法
CN114231956A (zh) * 2021-12-17 2022-03-25 南京麦德材料有限公司 免铜箔柔性线路活化材料、薄膜、柔性线路、制备及应用
CN115246626A (zh) * 2022-07-04 2022-10-28 南京理工大学 一种基于飞秒激光加工的调波柔性薄膜制备方法

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KR101725762B1 (ko) 2016-05-02 2017-04-11 심교권 도금 구조물 및 이의 제조방법
KR101681663B1 (ko) 2016-07-12 2016-12-12 문길환 전도성 패턴 적층체 및 이의 제조방법
KR101847287B1 (ko) 2016-09-09 2018-04-09 박정덕 진공 증착에 의한 도전성 박막시트 제조방법 및 이를 포함하는 도전성 박막 시트

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CN112969819A (zh) * 2018-11-14 2021-06-15 Ｙｍｔ股份有限公司 电镀积层和印刷电路板
CN114150299A (zh) * 2021-04-27 2022-03-08 天津大学 用于超低轮廓铜箔及其覆铜板制备的化学沉积方法
CN114231956A (zh) * 2021-12-17 2022-03-25 南京麦德材料有限公司 免铜箔柔性线路活化材料、薄膜、柔性线路、制备及应用
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CN115246626A (zh) * 2022-07-04 2022-10-28 南京理工大学 一种基于飞秒激光加工的调波柔性薄膜制备方法
CN115246626B (zh) * 2022-07-04 2025-05-16 南京理工大学 一种基于飞秒激光加工的调波柔性薄膜制备方法

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