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WO2015163288A1 - Dispositif de détection de lumière - Google Patents

Dispositif de détection de lumière Download PDF

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Publication number
WO2015163288A1
WO2015163288A1 PCT/JP2015/061998 JP2015061998W WO2015163288A1 WO 2015163288 A1 WO2015163288 A1 WO 2015163288A1 JP 2015061998 W JP2015061998 W JP 2015061998W WO 2015163288 A1 WO2015163288 A1 WO 2015163288A1
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Prior art keywords
semiconductor
layer
tft
semiconductor layer
drain electrode
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PCT/JP2015/061998
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Japanese (ja)
Inventor
一秀 冨安
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T7/00—Details of radiation-measuring instruments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors

Definitions

  • the present invention relates to a photodetection device having a photodiode and a thin film transistor.
  • the light detection device is further widely used as a radiation detection device (for example, an X-ray imaging display device) by further including a wavelength conversion layer (for example, a scintillator) that converts radiation into light.
  • a radiation detection device for example, an X-ray imaging display device
  • a wavelength conversion layer for example, a scintillator
  • Patent Document 1 discloses a photosensor including a photodiode and a TFT.
  • Patent Document 2 discloses a photoelectric conversion device including a MIS type sensor that functions as a photoelectric conversion element and a TFT.
  • the photodiode is provided inside the opening of the insulating layer formed on the drain electrode of the TFT, and the area of the photodiode is the drain. It is smaller than the area of the electrode. Therefore, since the area of the photodiode is limited, the aperture ratio of the photosensor disclosed in Patent Document 1 can be limited. In addition, since a high accuracy is required in the process of manufacturing the photodiode inside the opening, the manufacturing yield can be reduced.
  • a photoelectric conversion element is provided so as to overlap with a TFT through an insulating layer. Therefore, since the area of the photoelectric conversion element is not limited like the area of the photodiode of Patent Document 1, the aperture ratio of the photoelectric conversion device of FIG. 1 of Patent Document 2 is not limited. However, according to the study of the present inventor, the manufacturing yield of the photoelectric conversion device of FIG. Details will be described later.
  • the present invention has been made to solve the above problems, and it is an object of the present invention to suppress the aperture ratio of a photodetection device having a photodiode and a TFT from being limited and to improve the manufacturing yield.
  • An optical detection device includes a substrate, a TFT having a semiconductor layer, a source electrode, a drain electrode, and a gate electrode supported by the substrate, at least one insulating layer covering the TFT, and the at least A semiconductor multilayer structure and a photodiode having an upper electrode disposed on one insulating layer, the at least one insulating layer has an opening reaching the drain electrode, and the semiconductor multilayer structure includes: Directly in contact with the drain electrode in the opening, electrically connected to the drain electrode, and when viewed from the normal direction of the substrate, the opening is inside the semiconductor multilayer structure, and the semiconductor multilayer structure Does not overlap the semiconductor layer.
  • the at least one insulating layer includes silicon dioxide.
  • the TFT further includes an insulating protective layer in contact with the channel region of the semiconductor layer between the semiconductor layer and the source electrode and the drain electrode.
  • the semiconductor layer includes an oxide semiconductor.
  • the oxide semiconductor includes an In—Ga—Zn—O-based semiconductor.
  • the In—Ga—Zn—O-based semiconductor includes a crystalline portion.
  • the embodiment of the present invention it is possible to suppress the aperture ratio of the photodetector having the photodiode and the TFT from being limited, and to improve the manufacturing yield.
  • FIG. (A) is typical sectional drawing of the photodetector 100 by embodiment of this invention
  • (b) is a typical top view of the photodetector 100.
  • FIG. (A)-(e) is typical sectional drawing for demonstrating an example of the manufacturing method of the photodetector 100 by embodiment of this invention, respectively.
  • (A)-(c) is typical sectional drawing for demonstrating an example of the manufacturing method of the photodetector 100 by embodiment of this invention, respectively.
  • (A) is the SEM photograph which observed the surface of the semiconductor lamination structure 82 of the photodetector 200 of a comparative example with the scanning electron microscope (SEM),
  • (b) is the semiconductor lamination
  • 3 is a SEM photograph of a cross section of structure 82.
  • FIG. 1 of Patent Document 2 discloses a photoelectric conversion device including a TFT, an interlayer insulating layer provided on the TFT, and a photoelectric conversion element that overlaps the TFT through the interlayer insulating layer. The present inventor has found that the manufacturing yield of the photoelectric conversion device of FIG.
  • One of the causes of a decrease in manufacturing yield is that film floating and / or film peeling occurs in the semiconductor layer of the photoelectric conversion element in contact with the interlayer insulating layer in the process of forming the semiconductor layer of the photoelectric conversion element.
  • Film floating and / or film peeling tended to occur particularly frequently in the semiconductor layer in contact with the interlayer insulating layer containing silicon nitride (SiN x ).
  • an interlayer insulating layer containing silicon nitride contains a large amount of hydrogen, which can cause film floating or peeling of a semiconductor layer in contact with the interlayer insulating layer.
  • One of the causes for the decrease in the manufacturing yield of the photoelectric conversion device in FIG. 1 of Patent Document 2 is that the semiconductor layer (active layer) of the TFT overlaps with the semiconductor layer of the photoelectric conversion element via the interlayer insulating layer.
  • the potential of the back channel region of the semiconductor layer of the TFT can be affected by the potential of the semiconductor layer of the photoelectric conversion element.
  • Variations in the potential of the TFT semiconductor layer cause variations in TFT characteristics, which may reduce the manufacturing yield of the photoelectric conversion device of FIG.
  • the photodetection device according to the embodiment is, for example, a flat panel type, and is, for example, a photosensor, an image sensor, or a radiation detection device (X-ray imaging display device).
  • X-ray imaging display device X-ray imaging display device
  • the present invention is not limited to the embodiments exemplified below.
  • components having substantially the same function are denoted by common reference numerals, and description thereof may be omitted.
  • FIG. 1 shows a schematic cross-sectional view and a plan view of a photodetection device 100 according to an embodiment of the present invention.
  • FIG. 1A is a schematic cross-sectional view of the light detection device 100
  • FIG. 1B is a schematic plan view of the light detection device 100.
  • the light detection device 100 includes a substrate 10, a TFT 20 supported on the substrate 10, an insulating layer 32 covering the TFT 20, and a photodiode 40 disposed on the insulating layer 32.
  • the TFT 20 includes a semiconductor layer 24, a gate electrode 22, a source electrode 26, and a drain electrode 28 supported by the substrate 10, and the photodiode 40 includes a semiconductor stacked structure 42 and an upper electrode 44.
  • the TFT 20 of the light detection device 100 is a bottom gate type TFT.
  • the insulating layer 32 has an opening 32 c that reaches the drain electrode 28.
  • the semiconductor stacked structure 42 is in direct contact with the drain electrode 28 in the opening 32 c and is electrically connected to the drain electrode 28.
  • FIG. 1B is a plan view of the photodetecting device 100 as seen from the normal direction of the substrate 10.
  • the opening 32 c is inside the semiconductor multilayer structure 42 when viewed from the normal direction of the substrate 10.
  • the opening 32c is defined by, for example, a portion of the opening of the insulating layer 32 where the insulating layer 32 and the drain electrode 28 are in contact with each other.
  • the semiconductor stacked structure 42 does not overlap the semiconductor layer 24 when viewed from the normal direction of the substrate 10.
  • the semiconductor laminated structure 42 since the opening 32c is inside the semiconductor laminated structure 42, that is, the semiconductor laminated structure 42 is outside the opening 32c, the semiconductor laminated structure 42 has a larger area than the opening 32c.
  • the aperture ratio of the light detection device 100 is not limited by the opening 32c.
  • the drain electrode 28 and the semiconductor multilayer structure 42 are in direct contact with each other and are electrically connected to each other, so that another conductive layer (for example, an electrode) is provided between the drain electrode 28 and the semiconductor multilayer structure 42. There is no need to increase the manufacturing process. Further, it is not necessary to form the semiconductor laminated structure 42 inside the opening 32c. In the photodetecting device 100, a decrease in manufacturing yield can be suppressed.
  • the semiconductor stacked structure 42 does not overlap the semiconductor layer 24, fluctuations in the potential of the back channel region of the semiconductor layer 24 can be suppressed. In the photodetection device 100, variation in characteristics of the TFT 20 is reduced, so that the manufacturing yield can be improved.
  • At least the semiconductor stacked structure 42 preferably does not overlap with the channel region of the semiconductor layer 24 when viewed from the normal direction of the substrate 10.
  • the semiconductor stacked structure 42 preferably does not overlap with the entire semiconductor layer 24 when viewed from the normal direction of the substrate 10.
  • the insulating layer 32 contains silicon dioxide (SiO 2 ).
  • the insulating layer 32 is preferably formed of, for example, silicon dioxide, silicon oxynitride (SiO x N y , x> y), or silicon nitride oxide (SiN x O y , x> y).
  • the insulating layer 32 is more preferably formed only from silicon dioxide.
  • the semiconductor multilayer structure 42 is provided inside the drain electrode 28 when viewed from the normal direction of the substrate 10.
  • the photodetection device according to the embodiment of the present invention is not limited to this.
  • the photodiode region of the drain electrode 28 when viewed from the normal direction of the substrate 10, the photodiode region of the drain electrode 28 (the region of the drain electrode 28 positioned below the semiconductor multilayer structure 42) may be inside the semiconductor multilayer structure 42. .
  • the TFT 20 further includes a gate insulating film 23 between the gate electrode 22 and the semiconductor layer 24.
  • the photodiode 40 further includes a bias electrode 48 on the upper electrode 44.
  • the photodetector 100 further includes a passivation film 62 and a planarization film 64 on the insulating layer 32 and the photodiode 40.
  • the photodetection device 100 includes, for example, TFTs 20 and photodiodes 40 arranged in a matrix, and each photodiode 40 is connected to one TFT 20.
  • Each of the plurality of pixels included in the light detection device 100 includes a photodiode 40.
  • the photodiode 40 converts light applied to the semiconductor multilayer structure 42 into electric charges (electrons or holes). When a voltage is applied between the bias electrode 48 and the drain electrode 28 so that the semiconductor multilayer structure 42 is in a reverse bias state, the light irradiated to the semiconductor multilayer structure 42 is excited in the depletion layer. Converted to electric charge.
  • the charge generated by the photodiode 40 is taken out through the source electrode 26 when the TFT 20 connected to the photodiode 40 is turned on by a signal supplied to the gate electrode 22.
  • the light detection device 100 converts the amount of light irradiated to the semiconductor multilayer structure 42 into a current amount and outputs it as an electrical signal or an image.
  • the photodetection device 100 may further include a wavelength conversion layer (not shown) that converts radiation (for example, X-rays) into light above the photodiode 40.
  • the wavelength conversion layer includes, for example, a scintillator (for example, including CsI).
  • the photodetection device further having the wavelength conversion layer can function as a radiation detection device (for example, an X-ray imaging display device).
  • the semiconductor stacked structure 42 includes an n-type semiconductor layer 42n, a p-type semiconductor layer 42p, and an i-type semiconductor layer 42i provided therebetween. Structure.
  • the semiconductor stacked structure 42 is not limited to the illustrated structure.
  • the semiconductor stacked structure 42 may be a structure in which a p-type semiconductor layer 42p, an i-type semiconductor layer 42i, and an n-type semiconductor layer 42n are stacked in this order from the substrate 10 side.
  • the photodiode 40 of the photodetecting device according to the embodiment of the present invention is not limited to the PIN type, but may be a PN type.
  • each photodiode 40 is connected to one TFT 20, but the photodetection device according to the embodiment of the present invention is not limited to this.
  • Each of the photodiodes 40 of the photodetector according to the embodiment of the present invention may be connected to a plurality of TFTs.
  • the photodetector 100 according to the embodiment of the present invention may further include an amplifier circuit (for example, a source follower circuit (drain grounded circuit)).
  • An imaging device having three TFTs for each pixel is disclosed in, for example, Japanese Patent Application Laid-Open No. 2006-165530.
  • the photodetector 100 according to the embodiment of the present invention may further include a storage capacitor (CS) (not shown).
  • CS storage capacitor
  • Each of the photodiodes 40 of the photodetector according to the embodiment of the present invention may be connected to, for example, one TFT and one storage capacitor.
  • An electro-optical device having one TFT, one photodiode, and one storage capacitor for each pixel is disclosed in, for example, Japanese Patent Laid-Open No. 2009-238813 (Japanese Patent No. 5191259).
  • FIGS. 3 (a) to 3 (c) are cross-sectional views schematically showing the manufacturing process of the photodetection device 100.
  • FIG. 2 (a) to 2 (e) and FIGS. 3 (a) to 3 (c) are cross-sectional views schematically showing the manufacturing process of the photodetection device 100.
  • FIG. 2 (a) to 2 (e) and FIGS. 3 (a) to 3 (c) are cross-sectional views schematically showing the manufacturing process of the photodetection device 100.
  • the gate electrode 22 is formed on the substrate 10.
  • the substrate 10 is, for example, a glass substrate or a silicon substrate.
  • the substrate 10 may be formed from a heat-resistant plastic or resin.
  • the substrate 10 may be formed using, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), acrylic resin, or polyimide.
  • the gate electrode 22 is made of, for example, a metal such as aluminum (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr), titanium (Ti), copper (Cu).
  • the gate electrode 22 may be an alloy containing the above metal.
  • the gate electrode 22 may include the metal nitride described above.
  • the gate electrode 22 may be a single layer or may have a structure in which a plurality of films are stacked.
  • the thickness of the gate electrode 22 is, for example, 50 nm to 300 nm.
  • the gate electrode 22 has, for example, a laminated structure of aluminum (Al) and titanium (Ti), and the thickness of the gate electrode 22 is, for example, 300 nm.
  • the conductive film is processed into a predetermined shape (pattern) using a resist mask by a photolithography process.
  • the gate electrode 22 is formed.
  • dry etching or wet etching can be used.
  • dry etching which is anisotropic etching, is suitable for processing the line width uniformly in an etching region having a large area.
  • a gate insulating film 23 is formed on the gate electrode 22.
  • the gate insulating film 23 is made of, for example, silicon dioxide (SiO 2 ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y , x> y), or silicon nitride oxide (SiN x O y , x> y). )including.
  • the gate insulating film 23 may be a single layer or a stacked structure of a plurality of films.
  • the lower layer of the gate insulating film 23 (the layer on the substrate 10 side) is made of silicon nitride ( SiN x ) or silicon nitride oxide (SiN x O y , x> y) or the like
  • the upper layer of the gate insulating film 23 (layer on the semiconductor layer 24 side) is silicon dioxide (SiO 2 ) or silicon oxynitride
  • SiO x N y , x> y silicon dioxide
  • a dense insulating film can be deposited at a relatively low temperature by mixing a rare gas (for example, argon) with a reaction gas used for forming the gate insulating film 23.
  • a dense insulating film can have an effect of reducing gate leakage current.
  • a silicon nitride (SiN x ) film having a thickness of 100 nm to 400 nm is formed as a lower layer, and a silicon dioxide (SiO 2 ) film having a thickness of 50 nm to 100 nm is formed thereon as an upper layer.
  • a gate insulating film 23 having a stacked structure is formed.
  • SiH 4 or NH 3 is used as a reaction gas.
  • a semiconductor layer 24 is formed on the gate insulating film 23.
  • the semiconductor layer 24 includes, for example, an oxide semiconductor.
  • the oxide semiconductor for example, an In—Ga—Zn—O-based semiconductor containing indium, gallium, zinc, and oxygen as main components (hereinafter abbreviated as “In—Ga—Zn—O-based semiconductor”). Is included.
  • the semiconductor layer 24 may include, for example, InGaO 3 (ZnO) 5 .
  • a TFT having an In—Ga—Zn—O-based semiconductor layer has high mobility (more than 20 times that of an amorphous silicon (a-Si) TFT) and low leakage current (less than 100 times that of an a-Si TFT). Since it has, it is used suitably as a drive TFT and a pixel TFT. Since a TFT having an In—Ga—Zn—O-based semiconductor layer has high mobility, downsizing of the TFT can be realized. If a TFT having an In—Ga—Zn—O-based semiconductor layer is used, for example, the power consumption of the photodetector can be significantly reduced and / or the resolution of the photodetector can be improved.
  • the In—Ga—Zn—O based semiconductor may be amorphous (amorphous) or may contain a crystalline part.
  • a crystalline In—Ga—Zn—O-based semiconductor in which the c-axis is oriented substantially perpendicular to the layer surface is preferable.
  • Such a crystal structure of an In—Ga—Zn—O-based semiconductor is disclosed in, for example, Japanese Patent Laid-Open No. 2012-134475. For reference, the entire disclosure of Japanese Patent Application Laid-Open No. 2012-134475 is incorporated herein by reference.
  • the semiconductor layer 24 may include another oxide semiconductor instead of the In—Ga—Zn—O-based semiconductor.
  • Zn—O based semiconductor ZnO
  • In—Zn—O based semiconductor IZO (registered trademark)
  • Zn—Ti—O based semiconductor ZTO
  • Cd—Ge—O based semiconductor Cd—Pb—O based
  • CdO cadmium oxide
  • Mg—Zn—O based semiconductors In—Sn—Zn—O based semiconductors (eg, In 2 O 3 —SnO 2 —ZnO), In—Ga—Sn—O based semiconductors, etc. You may go out.
  • the Zn—O based semiconductor includes, for example, a semiconductor in which no impurity element is added to ZnO, or a semiconductor in which an impurity is added to ZnO.
  • the Zn—O-based semiconductor includes, for example, a semiconductor to which one or a plurality of impurity elements are added among a group 1 element, a group 13 element, a group 14 element, a group 15 element, a group 17 element, and the like.
  • the Zn—O based semiconductor includes, for example, magnesium zinc oxide (Mg x Zn 1-x O) or cadmium zinc oxide (Cd x Zn 1-x O).
  • the Zn—O-based semiconductor may be amorphous (amorphous), polycrystalline, or a microcrystalline state in which an amorphous state and a polycrystalline state are mixed.
  • the semiconductor layer 24 may include another semiconductor instead of the oxide semiconductor.
  • amorphous silicon, polycrystalline silicon, low-temperature polysilicon, or the like may be included.
  • the thickness of the semiconductor layer 24 is, for example, 30 nm to 100 nm.
  • the semiconductor layer 24 is formed by processing into a predetermined shape (pattern) by a photolithography process including etching using a resist mask.
  • the source electrode 26 and the drain electrode 28 are formed.
  • the source electrode 26 and the drain electrode 28 are typically formed from the same film, but are not limited thereto, and may be formed from different films.
  • Each of the source electrode 26 and the drain electrode 28 includes, for example, a metal or an inorganic conductive material (for example, an oxide or a nitride).
  • the metal includes, for example, aluminum (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr), titanium (Ti), or copper (Cu).
  • Each of the source electrode 26 and the drain electrode 28 may be an alloy containing the above metal.
  • the source electrode 26 and the drain electrode 28 may each include the above-described metal nitride.
  • the inorganic conductive material examples include indium tin oxide (ITO), indium zinc oxide (IZO (registered trademark)), indium tin oxide containing silicon oxide (ITSO), indium oxide (In 2 O 3 ), and tin oxide. (SnO 2 ), zinc oxide (ZnO), or titanium nitride (TiN) is included.
  • the source electrode 26 and the drain electrode 28 may each be formed from a compound of the above-described inorganic conductive material.
  • Each of the inorganic conductive materials forming the source electrode 26 and the drain electrode 28 may have visible light transmittance.
  • Each of the source electrode 26 and the drain electrode 28 may be a single layer or may have a stacked structure of a plurality of films. The thicknesses of the source electrode 26 and the drain electrode 28 are, for example, 200 nm to 700 nm, respectively.
  • the source electrode 26 and the drain electrode 28 each have, for example, a laminated structure of Ti and Al (Ti / Al / Ti).
  • the source electrode 26 and the drain electrode 28 are each formed in a predetermined manner by a photolithography process using etching (dry etching or wet etching) after sequentially depositing Ti and Al, for example, using a sputtering apparatus. It is formed by processing into a shape (pattern).
  • an insulating layer 32 is formed on the TFT 20, and an opening 32c reaching the drain electrode 28 is formed.
  • the insulating layer 32 includes, for example, silicon dioxide (SiO 2 ), silicon oxynitride (SiO x N y , x> y), or silicon nitride oxide (SiN x O y , x> y).
  • the insulating layer 32 may be a single layer or may have a structure in which a plurality of films are stacked.
  • the insulating layer 32 is made of, for example, silicon dioxide.
  • the thickness of the insulating layer 32 is, for example, 200 nm to 500 nm.
  • the insulating layer 32 is formed, for example, by forming silicon dioxide on the entire surface of the substrate 10 and then heating (for example, 350 ° C.) the entire surface of the substrate 10.
  • the opening 32c is formed by, for example, a photolithography process including etching using a resist mask performed after the insulating layer 32 is formed.
  • the semiconductor stacked structure 42 is, for example, a structure in which an n-type semiconductor layer 42n, a p-type semiconductor layer 42p, and an i-type semiconductor layer 42i provided therebetween are stacked.
  • the n-type semiconductor layer 42n is formed from a semiconductor (n-type semiconductor) in which electrons having negative charges are carriers, and the n-type semiconductor layer 42n has a high concentration of n-type carriers (electrons) in the semiconductor stacked structure 42. Including a region (n + region).
  • the n-type semiconductor layer 42n is formed of, for example, amorphous silicon (a-Si).
  • the thickness of the n-type semiconductor layer 42n is, for example, 20 nm to 100 nm.
  • the i-type semiconductor layer 42i is formed of a semiconductor layer having lower conductivity than the n-type semiconductor layer 42n and the p-type semiconductor layer 42p, and is formed of, for example, an intrinsic semiconductor.
  • the i-type semiconductor layer 42i is formed of amorphous silicon, for example.
  • the i-type semiconductor layer 42i has a thickness of 1 ⁇ m to 1.5 ⁇ m, for example.
  • the photodiode 40 having a large i-type semiconductor layer 42i can have a high photoelectric conversion efficiency because the depletion layer has a large thickness.
  • the p-type semiconductor layer 42p is formed by forming an acceptor (for example, the i-type semiconductor layer 42i from Si in an end region (for example, an upper layer portion) of the i-type semiconductor layer 42i by, for example, an ion shower doping method or an ion implantation method. In this case, it may be formed by injecting B).
  • an acceptor for example, the i-type semiconductor layer 42i from Si in an end region (for example, an upper layer portion) of the i-type semiconductor layer 42i by, for example, an ion shower doping method or an ion implantation method. In this case, it may be formed by injecting B).
  • the upper electrode 44 is made of, for example, a transparent conductive material (for example, indium zinc oxide (IZO (registered trademark)) or indium tin oxide (ITO)).
  • IZO indium zinc oxide
  • ITO indium tin oxide
  • the materials for forming each of the n-type semiconductor layer 42n, the i-type semiconductor layer 42i, and the p-type semiconductor layer 42p are formed in this order on the entire surface of the substrate 10 using the CVD method.
  • Indium zinc oxide is deposited in a region including a region where the semiconductor multilayer structure 42 is formed by a sputtering method.
  • the semiconductor multilayer structure 42 and the upper electrode 44 are formed by processing into a predetermined shape (pattern) by a photolithography process.
  • the drain electrode 28 and the semiconductor multilayer structure 42 are in direct contact and are electrically connected to each other in the opening 32c.
  • a passivation film 62 is formed.
  • the passivation film 62 covers, for example, the entire surface of the TFT 20, the entire side surface of the photodiode 40, and a part (end portion) of the upper surface.
  • the passivation film 62 includes, for example, silicon nitride, silicon dioxide, silicon nitride oxide, or silicon oxynitride.
  • the passivation film 62 may be a single layer or may have a structure in which a plurality of films are stacked.
  • the passivation film 62 may have, for example, a stacked structure (SiN x / SiO 2 ) of silicon nitride and silicon dioxide.
  • the passivation film 62 is formed on the upper surface of the photodiode 40 by a photolithography process after an insulating material is formed so as to cover the entire surface of the TFT 20 and the side surfaces and the upper surface of the photodiode 40 by, for example, the CVD method. Formed by removing a portion.
  • a planarizing film 64 and a bias electrode 48 are formed.
  • the planarization film 64 is formed on the passivation film 62.
  • the planarization film 64 is made of, for example, an inorganic insulating material (for example, silicon dioxide, silicon nitride, silicon oxynitride, silicon nitride oxide) or an organic insulating material.
  • the planarization film 64 may be formed from a photosensitive resin.
  • the planarization film 64 is formed by, for example, forming a film by a CVD method and then processing it into a predetermined shape (pattern) by a photolithography process. When a photosensitive resin is used as a material for forming the planarizing film 64, patterning can be performed without using a photoresist.
  • the bias electrode 48 is formed on the upper electrode 44.
  • the bias electrode 48 is made of, for example, Mo, Ti, Al, or the like.
  • the light detection device 100 is manufactured through the above steps.
  • FIG. 4 is a schematic cross-sectional view of the light detection device 110.
  • the photodetection device 110 further includes an insulating protective layer 25 in contact with the channel region 24 c of the semiconductor layer 24 between the semiconductor layer 24 and the source electrode 26 and the drain electrode 28. Different from the device 100.
  • the light detection device 110 may be the same as the light detection device 100 except that the light detection device 110 further includes an insulating protective layer 25.
  • the TFT 20 of the light detection device 100 may be called a channel etching type, and the TFT 20 of the light detection device 110 may be called an etching stop type.
  • a source electrode and a drain electrode of the TFT are formed by etching a conductive film formed on the semiconductor layer.
  • the surface portion of the semiconductor layer is also etched in this etching process. Since the etching stop type TFT has an insulating film on the channel region of the semiconductor layer, this insulating film functions as an etch stop in the etching process for forming the source electrode and the drain electrode.
  • the insulating protective layer 25 of the photodetector 110 can function as an etch stop for the semiconductor layer 24 when the source electrode 26 and the drain electrode 28 are formed. Since the photodetector 110 includes the insulating protective layer 25, damage to the semiconductor layer 24 in the process of forming the source electrode 26 and the drain electrode 28 is reduced. In the photodetection device 110, variation in characteristics of the TFT 20 is reduced, so that an excellent manufacturing yield can be realized.
  • the insulating protective layer 25 is made of, for example, silicon dioxide (SiO 2 ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y , x> y), or silicon nitride oxide (SiN x O y , x> y). )including.
  • the insulating protective layer 25 may be a single layer or a laminated structure of a plurality of films.
  • the thickness of the insulating protective layer 25 is, for example, 50 nm to 200 nm.
  • the semiconductor laminated structure 42 has a larger area than the opening 32c.
  • the aperture ratio of the light detection device 110 is not limited by the opening 32c.
  • the drain electrode 28 and the semiconductor multilayer structure 42 are in direct contact with each other and are electrically connected to each other. Therefore, another conductive layer (for example, an electrode) is provided between the drain electrode 28 and the semiconductor multilayer structure 42. There is no need to increase the manufacturing process. Further, it is not necessary to form the semiconductor laminated structure 42 inside the opening 32c. In the photodetecting device 110, a decrease in manufacturing yield can be suppressed.
  • the semiconductor stacked structure 42 does not overlap the semiconductor layer 24, fluctuations in the potential of the back channel region of the semiconductor layer 24 can be suppressed.
  • variation in characteristics of the TFT 20 is reduced, so that the manufacturing yield can be improved.
  • the manufacturing method of the photodetecting device 110 may be the same as the manufacturing method of the photodetecting device 100 except for the manufacturing process of the insulating protective layer 25.
  • FIG. 5 is a schematic cross-sectional view of the light detection device 120.
  • the light detection device 120 is different from the light detection device 100 in that the TFT 20t is a top gate type TFT.
  • the light detection device 120 may be the same as the light detection device 100 except that the TFT 20t is a top gate type.
  • the TFT 20t has a semiconductor layer 24, a gate electrode 22, a source electrode 26, and a drain electrode 28 supported by the substrate 10.
  • the TFT 20 t further includes a gate insulating film 23 between the source electrode 26 and the drain electrode 28 and the gate electrode 22.
  • the insulating layer 32 and the gate insulating film 23 have an opening 32 c that reaches the drain electrode 28.
  • the semiconductor laminated structure 42 has a larger area than the opening 32c.
  • the aperture ratio of the light detection device 120 is not limited by the opening 32c.
  • the drain electrode 28 and the semiconductor multilayer structure 42 are in direct contact with each other and are electrically connected to each other, so that another conductive layer (for example, an electrode) is provided between the drain electrode 28 and the semiconductor multilayer structure 42. There is no need to increase the manufacturing process. Further, it is not necessary to form the semiconductor laminated structure 42 inside the opening 32c. In the light detection device 120, a decrease in manufacturing yield can be suppressed.
  • the semiconductor stacked structure 42 does not overlap the semiconductor layer 24, fluctuations in the potential of the back channel region of the semiconductor layer 24 can be suppressed.
  • variation in characteristics of the TFT 20t is reduced, so that the manufacturing yield can be improved.
  • the manufacturing method of the photodetecting device 120 may be the same as the manufacturing method of the photodetecting device 100 except for the manufacturing process of the TFT 20t.
  • the light detection device 120 is, for example, a channel etching type. However, the photodetection device according to the embodiment of the present invention is not limited to this.
  • the photodetector 120 may further include an insulating protective layer (not shown) that is in contact with the channel region 24c of the semiconductor layer 24 between the semiconductor layer 24 and the source electrode 26 and the drain electrode 28 (etching stop type). May be).
  • the insulating protective layer may be the same as the insulating protective layer 25 included in the photodetector 110, for example.
  • the insulating protective layer can reduce damage to the semiconductor layer 24 in the process of forming the source electrode 26 and the drain electrode 28. In the photodetector having the insulating protective layer, variation in characteristics of the TFT is reduced, so that an excellent manufacturing yield can be realized.
  • FIG. 6 is a schematic cross-sectional view of the light detection device 200.
  • components having substantially the same functions as the components of the above-described light detection apparatus 100 are denoted by common reference numerals, and description thereof is omitted.
  • the light detection device 200 of the comparative example is different from the light detection device 100 in that the semiconductor stacked structure 82 of the photodiode 80 overlaps the semiconductor layer 24 of the TFT 20 via the insulating layer 32.
  • the insulating layer 32 of the photodetector 200 is made of silicon nitride (SiN x ).
  • the semiconductor stacked structure 82 is, for example, a structure in which an n-type semiconductor layer 82n, a p-type semiconductor layer 82p, and an i-type semiconductor layer 82i provided therebetween are stacked.
  • FIG. 7A shows an SEM image obtained by observing the surface of the semiconductor multilayer structure 82 of the photodetector 200 with the SEM
  • FIG. 7B shows an SEM image of a cross section of the semiconductor multilayer structure 82 of the photodetector 200.
  • the semiconductor laminated structure 82 overlaps with the TFT 20 via the insulating layer 32, it can be suppressed that the aperture ratio of the light detection device 200 of the comparative example is limited.
  • the semiconductor laminated structure 82 in contact with the insulating layer 32 formed of silicon nitride film floating and / or film peeling occurred as shown in FIGS. 7 (a) and 7 (b).
  • the semiconductor laminated structure 82 overlaps with the TFT 20 via the insulating layer 32, the potential of the back channel region of the semiconductor layer 24 of the TFT 20 varies, and the characteristics of the TFT 20 vary.
  • the photodetection device according to the embodiment of the present invention can realize an excellent manufacturing yield.
  • the light detection apparatus is used as an apparatus (sensor device) for detecting various light and / or radiation such as a flat panel X-ray detection apparatus and an image sensor.
  • the light detection device is not limited to the medical field, and can be used for non-destructive inspection such as baggage inspection in an airport, for example.

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

La présente invention vise à supprimer les limitations concernant le rapport d'ouverture d'un dispositif de détection de lumière comportant une photodiode et un transistor en couches minces, et à améliorer le rendement de la fabrication. A cet effet, la présente invention concerne un dispositif de détection de lumière (100) comportant: un substrat (10); un transistor en couches minces (20) monté sur le substrat et comprenant une couche semi-conductrice (24), une électrode de source (26), une électrode de drain (28), et une électrode de grille (22); une couche d'isolation (32) recouvrant le transistor en couches minces; et une photodiode (40) disposée sur la couche d'isolation et comprenant une structure stratifiée de semi-conducteur (42) et une électrode supérieure (44), la couche d'isolation comprenant une ouverture (32c) menant vers l'électrode de drain, la structure stratifiée de semi-conducteur étant en contact direct avec l'électrode de drain à l'intérieur de l'ouverture, et connecté électriquement à l'électrode de drain, et vue dans la direction de la normale au substrat, l'ouverture est située à l'intérieur de la structure stratifiée de semi-conducteur, et la structure stratifiée de semi-conducteur ne recouvre pas la couche semi-conductrice.
PCT/JP2015/061998 2014-04-21 2015-04-20 Dispositif de détection de lumière Ceased WO2015163288A1 (fr)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107039474A (zh) * 2015-12-18 2017-08-11 精工爱普生株式会社 光电转换元件及其制造方法以及光电转换装置
WO2018025819A1 (fr) * 2016-08-03 2018-02-08 シャープ株式会社 Panneau d'imagerie et son procédé de fabrication
EP3627554A4 (fr) * 2017-05-19 2021-06-09 BOE Technology Group Co., Ltd. Substrat de réseau et son procédé de fabrication, détecteur à panneau plat et dispositif d'imagerie

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Publication number Priority date Publication date Assignee Title
JPS6450465A (en) * 1987-08-20 1989-02-27 Canon Kk Semiconductor device
JP2011159908A (ja) * 2010-02-03 2011-08-18 Sony Corp 薄膜トランジスタおよびその製造方法、並びに表示装置
JP2012134475A (ja) * 2010-12-03 2012-07-12 Semiconductor Energy Lab Co Ltd 酸化物半導体膜および半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450465A (en) * 1987-08-20 1989-02-27 Canon Kk Semiconductor device
JP2011159908A (ja) * 2010-02-03 2011-08-18 Sony Corp 薄膜トランジスタおよびその製造方法、並びに表示装置
JP2012134475A (ja) * 2010-12-03 2012-07-12 Semiconductor Energy Lab Co Ltd 酸化物半導体膜および半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107039474A (zh) * 2015-12-18 2017-08-11 精工爱普生株式会社 光电转换元件及其制造方法以及光电转换装置
WO2018025819A1 (fr) * 2016-08-03 2018-02-08 シャープ株式会社 Panneau d'imagerie et son procédé de fabrication
EP3627554A4 (fr) * 2017-05-19 2021-06-09 BOE Technology Group Co., Ltd. Substrat de réseau et son procédé de fabrication, détecteur à panneau plat et dispositif d'imagerie

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