[go: up one dir, main page]

WO2015160160A1 - Appareil et procédé de préparation continue de nitrure de silicium présentant une uniformité granulométrique améliorée - Google Patents

Appareil et procédé de préparation continue de nitrure de silicium présentant une uniformité granulométrique améliorée Download PDF

Info

Publication number
WO2015160160A1
WO2015160160A1 PCT/KR2015/003687 KR2015003687W WO2015160160A1 WO 2015160160 A1 WO2015160160 A1 WO 2015160160A1 KR 2015003687 W KR2015003687 W KR 2015003687W WO 2015160160 A1 WO2015160160 A1 WO 2015160160A1
Authority
WO
WIPO (PCT)
Prior art keywords
reactor
silicon nitride
pyrolysis
gas
synthesis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2015/003687
Other languages
English (en)
Korean (ko)
Inventor
구재홍
정용권
김신아
지은옥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OCI Holdings Co Ltd
Original Assignee
OCI Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OCI Co Ltd filed Critical OCI Co Ltd
Priority to CN201580020005.3A priority Critical patent/CN106232519A/zh
Priority to JP2016562851A priority patent/JP6283123B2/ja
Publication of WO2015160160A1 publication Critical patent/WO2015160160A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon

Definitions

  • the present invention relates to a silicon nitride production apparatus and a manufacturing method, and more particularly, to a continuous silicon nitride production apparatus and a method for producing silicon nitride can improve the uniformity of the silicon nitride particles.
  • silicon nitride Thermal and mechanical properties of silicon nitride are highly dependent on particle size, shape, purity, crystal phase, and the like. According to the industry for processing and forming silicon nitride, in particular, alpha ( ⁇ ) silicon nitride is known as a raw material capable of producing a product having excellent thermal and mechanical properties.
  • Particle size is a very important factor. The finer and more uniform the particle size is, the more advantageous it is for processing and forming.
  • the gas phase reaction method which is one of methods for producing silicon nitride, is a method of obtaining silicon nitride by reacting silicon halide and ammonia in the gas phase.
  • the gas phase reaction method reacts at a temperature of about 1000 ° C.
  • the silicon nitride thus prepared has advantages in obtaining a pure alpha phase, but is not suitable for synthesizing powdered silicon nitride mainly because it is produced in a film form.
  • the advantage of the method of reacting at room temperature is that the two reactants react directly in the gaseous state to form a solid powder, thereby preventing the introduction of impurities, and through the pyrolysis of the imide thus produced to produce silicon nitride having a high alpha phase content It can be done.
  • the imide can be pyrolyzed at about 1000 ° C. to produce amorphous silicon nitride, and crystallized at a temperature of 1400 ° C. or higher to obtain alpha phase silicon nitride.
  • the reaction to synthesize the imide is a vigorous exothermic reaction resulting in a local temperature rise of the reactor.
  • the temperature of the reactor is raised to a temperature higher than 100 °C, this temperature rise adversely affects the size and quality of the particles produced during the synthesis of the imide.
  • the method for producing silicon nitride by pyrolyzing imide is composed of three steps of silicon diimide synthesis process, pyrolysis process and crystallization process.
  • the apparatuses for the respective processes are different from each other, and silicon nitride is produced by a batch process.
  • silicon nitride when silicon nitride is manufactured by a batch process, it takes a lot of time and money to produce silicon nitride.
  • a silicon nitride manufacturing apparatus using a batch process has to transfer silicon diimide from the silicon diimide synthesis apparatus to the pyrolysis reactor, and there is a risk that the silicon diimide is exposed to the atmosphere during the transfer process. It may be hydrolyzed and denatured, and unnecessary oxygen impurities may be introduced to deteriorate the quality of silicon nitride.
  • the imide decomposition process and the crystallization process are the same heat treatment processes, both processes can be performed in one apparatus.
  • the container used for the imide decomposition process must be used in combination with an accessory for removing by-products as described above. It is not possible to implement imide digestion vessels using materials available at crystallization temperatures. Therefore, the imide decomposition process and the crystallization process were each carried out in a batch process.
  • Another object of the present invention is to provide a continuous silicon nitride production apparatus and a manufacturing method that can reduce the production cost and production time of silicon nitride.
  • Still another object of the present invention is to provide a continuous silicon nitride production apparatus and a method for producing silicon nitride having a uniform particle size.
  • the present invention has a cylindrical shape arranged in the transverse direction and is supplied with silane chloride (SiCl 4 ) gas and ammonia (NH 3 ) gas in the horizontal direction through each nozzle and the product of silicon diimide (Si (NH) 2 ) and A synthesis reactor for preparing byproduct ammonium chloride (NH 4 Cl);
  • a mixture powder of the product and the byproduct is supplied from the synthesis reactor to pyrolyze ammonium chloride in a first region, and pyrolyze silicon diimide in a second region to produce amorphous silicon nitride, wherein the first region and the second region Pyrolysis reactors connected in series; It provides a continuous silicon nitride manufacturing apparatus comprising a; and a crystallization reactor for heating the amorphous silicon nitride discharged from the pyrolysis reactor to 1200 ⁇ 1700 °C temperature crystallized into crystalline silicon nitride (Crystal Si 3 N 4 ).
  • the present invention is to rotate the transverse reactor arranged in the transverse direction and to add the silane chloride gas and ammonia gas as the raw material gas in the transverse direction to produce a silicon diimide and ammonium chloride mixed powder through a room temperature gas phase reaction inside the reactor Silicon diimide synthesis process;
  • the mixed powder produced in the silicon diimide synthesis process is sequentially passed through a first region including a temperature range of 300 to 600 ° C. and a second region including a temperature range of 600 to 1200 ° C.
  • Pyrolysis process for performing ammonium pyrolysis and performing amorphous silicon nitride synthesis in the second region; And a crystallization process of filling the crucible with amorphous silicon nitride prepared in the pyrolysis process and injecting the crucible into a crystallization reactor having a temperature range of 1200 to 1700 ° C. to crystallize amorphous silicon nitride to crystalline silicon nitride.
  • the continuous silicon nitride production apparatus and manufacturing method according to the present invention can be continuously operated from the silicon diimide synthesis process to the crystallization process, so that the temperature raising process and the cooling process, which are unnecessaryly performed between the processes, can be omitted. It saves energy and time.
  • the continuous silicon nitride production apparatus and manufacturing method according to the present invention can be produced silicon nitride without exposing the silicon diimide to the outside by the silicon diimide synthesis process and the pyrolysis process continuously made. Therefore, it brings about the effect which can solve the problem of denaturation of silicon diimide and the inflow of oxygen impurity which generate
  • the apparatus and method for producing continuous silicon nitride according to the present invention can obtain a uniform particle size distribution than a vertical reactor by performing a synthesis reaction in a horizontal reactor, and further, by cooling and rotating the horizontal reactor, silicon nitride of better quality is achieved. Brings the effect of manufacturing.
  • FIG. 1 is a block diagram showing a continuous silicon nitride production apparatus according to an embodiment of the present invention.
  • FIG. 2 is a process flowchart showing a continuous silicon nitride manufacturing method according to an embodiment of the present invention.
  • station 220 station 2 230: by-product collector
  • the present invention prevents the local temperature rise of the reactor wall caused by the exothermic reaction of silicon halide and ammonia, and silicon nitride having a uniform particle size and shape by circulating cooling water in the reactor wall to obtain silicon diimide at a temperature below 100 ° C. It provides a manufacturing apparatus and a manufacturing method capable of manufacturing.
  • the present invention more effectively maintains the temperature of the reactor base wall, by proceeding the reaction while rotating the reactor, thereby bringing the effect of suppressing the local temperature rise due to the exothermic reaction.
  • FIG. 1 is a block diagram showing a continuous silicon nitride production apparatus according to an embodiment of the present invention.
  • the continuous silicon nitride production apparatus includes a synthesis reactor 100, a pyrolysis reactor 200, and a crystallization reactor 300.
  • Synthesis reactor 100 is for producing a product of silicon diimide (Si (NH) 2 ) and by-product ammonium chloride (NH 4 Cl) through a room temperature gas phase reaction of silane chloride gas and ammonia gas.
  • the pyrolysis reactor 200 is for producing amorphous silicon nitride by pyrolyzing a product and by-products. It includes two regions 220.
  • the crystallization reactor is intended to produce crystalline silicon nitride of alpha ( ⁇ ) by heating amorphous silicon nitride above the crystallization temperature.
  • Synthesis reactor 100 is a horizontal reactor that causes the reaction of the silane chloride gas and ammonia gas as the raw material gas flowing in the reactor in the horizontal direction.
  • the synthesis reactor 100 has a cylindrical shape arranged in the transverse direction, the raw material gas is supplied to one side and the product and by-products are stacked on the bottom of the reactor.
  • the supply nozzles 105 of the source gas are installed in the side plate 104 of the synthesis reactor 100 in a state spaced apart from each other.
  • the side plate 104 is connected to the synthetic reactor rotary body 102.
  • Synthetic reactor rotating body 102 forms a reaction space therein, and is formed to rotate with respect to the side plate (104).
  • the rotating shaft of the synthetic reactor rotary body 102 is formed to be inclined with respect to the horizontal direction. More specifically, the synthetic reactor rotary body 102 is formed to be inclined downward as it moves away from the side plate 102. This inclined structure allows the mixed powder stacked on the bottom of the synthesis reactor rotating body 102 to be transferred to the pyrolysis reactor 200 as the synthesis reactor rotating body 102 rotates.
  • the synthesis reactor 100 further includes a cooling jacket 110 to cool the reaction heat generated in the exothermic reaction so that the reaction zone can maintain a certain range of temperature.
  • the cooling jacket 110 is formed in a form surrounding the synthetic reactor rotating body 102 and serves to cool the synthetic reactor rotating body 102.
  • the cooling jacket 110 may be in the form of rotating together with the synthetic reactor rotating body 102, the cooling jacket 110 is fixed without rotation and may be in the form of rotating only the synthesis reactor rotating body 102 therein. have.
  • the cooling jacket 110 may not be in the form of enclosing the entire synthesis reactor rotating body 102 but may be in the form of enclosing only a portion (for example, an upper region).
  • the pyrolysis reactor 200 includes a pyrolysis reactor rotary body 202 connected to the synthesis reactor rotary body 102, a by-product collector 230 which collects ammonium chloride by receiving and cooling a gas discharged from the pyrolysis reactor rotary body 102, and a downstream side thereof. It is connected to 204 and includes an inert gas supply unit 240 for supplying an inert gas into the rotating body 202.
  • the pyrolysis reactor rotating body 202 may be divided into a first region 210 and a second region 220.
  • the division of the first region 210 and the second region 220 is dependent on temperature and may be formed integrally without being physically divided into a single material.
  • the first region 210 is a section for proceeding pyrolysis of ammonium chloride, it is sufficient to have a section having a temperature higher than the ammonium chloride pyrolysis temperature (338 °C). More specifically, the first region may have a temperature in the range of 300 to 600 ° C.
  • the second region 220 is a section for proceeding pyrolysis of silicon diimide and includes a section having a temperature higher than silicon diimide pyrolysis temperature (1000 ° C.). It is not necessary that the entire second region be at least 1000 ° C., but it is sufficient to have a section having a temperature of at least 1000 ° C. in the section of the second region, but only required for the pyrolysis process of silicon diimide at a section having a temperature above 1000 ° C. The residence time must be secured.
  • the pyrolysis reactor 200 may have a temperature gradient in which the temperature increases from the left side to the right side of the drawing.
  • the pyrolysis reactor 200 includes a by-product collector 230 for collecting ammonium chloride and an inert gas supply unit 240 for supplying a carrier gas.
  • the silicon diimide and ammonium chloride mixed powder synthesized in the synthesis reactor 100 is introduced into the first region 210 of the pyrolysis reactor 200.
  • silicon diimide is not changed, and ammonium chloride is thermally decomposed into ammonia (NH 3 ) gas and hydrogen chloride (HCl) gas.
  • the ammonia gas and the hydrogen chloride gas are introduced into the by-product collector 230 together with the carrier gas supplied from the inert gas supply unit 240.
  • the by-product collector 230 collects ammonium chloride by receiving and cooling a gas discharged from the pyrolysis reactor 200.
  • a carrier gas an inert gas, such as nitrogen (N2) gas, is used.
  • the carrier gas serves to cause gas generated by pyrolysis of ammonium chloride to flow to the by-product collector 230 without flowing to the second region 220.
  • the carrier gas also serves to cause pyrolysis of the silicon diimide in the second region 220 in an inert gas atmosphere.
  • silicon diimide is thermally decomposed into amorphous silicon nitride and ammonia gas.
  • the ammonia gas generated at this time is sent to the by-product collector 230 by the above-described carrier gas.
  • the rotary body 202 of the pyrolysis reactor 200 is preferably rotated about the same axis of rotation as the synthetic reactor rotary body 102. This structure allows the powder contained therein to sequentially move from the first region 210 to the second region 220. By adjusting the length and rotation speed of each section, the residence time in each section can be controlled.
  • the pyrolysis reactor 200 may include a rotary kiln.
  • the crystallization reactor 300 serves to crystallize amorphous silicon nitride formed in the pyrolysis reactor 200 at a temperature of 1200 to 1700 ° C., and includes a tunnel kiln through which the crucible 310 is passed.
  • the continuous silicon nitride manufacturing apparatus further includes a filling device 250 filling the crucible 310 which is introduced into the crystallization reactor 300 with amorphous silicon nitride synthesized in the pyrolysis reactor 200.
  • the filling device 250 serves to inject a predetermined amount of amorphous silicon nitride powder continuously supplied from the pyrolysis reactor 200 into the crucible 310.
  • FIG. 2 is a process flowchart showing a continuous silicon nitride manufacturing method according to an embodiment of the present invention.
  • the silicon nitride production method according to the present invention rotates the transverse reactor arranged in the transverse direction and injects silane chloride gas and ammonia gas which are the raw material gases in the transverse direction to mix silicon diimide and ammonium chloride powder through a room temperature gas phase reaction inside the reactor.
  • the mixed powder produced in the silicon diimide synthesis process is sequentially passed through a first region including a temperature range of 300 ° C. to 600 ° C., and a second region including a temperature range of 600 ° C. to 1500 ° C. or higher.
  • Forming the amorphous silicon nitride prepared in the pyrolysis process into the crucible, and the crucible is introduced into a crystallization reactor having a temperature range of 1200 ⁇ 1700 °C includes a crystallization process (S300) for crystallizing the amorphous silicon nitride with crystalline silicon nitride.
  • the silicon diimide synthesis step (S100) is preferably performed by cooling the reactor to suppress the temperature rise of the reaction zone due to the reaction heat generated in the exothermic reaction.
  • the pyrolysis process (S200) is to supply an inert gas from the second region to the first region as a carrier gas, and discharge the gas through the by-product collector in the first region, thereby collecting ammonium chloride and amorphous silicon nitride inert gas It is desirable to be able to achieve in the atmosphere.
  • the present invention is not for producing silicon nitride in a batch process, but for producing silicon nitride in a continuous process.
  • the silicon diimide which is a product produced in the synthesis reactor 100, is not exposed to the outside and the pyrolysis reactor 200 It is characterized in that the continuous supply.
  • This structure has the effect of preventing the silicon diimide from being denatured or the inflow of oxygen impurities.
  • the synthesis reactor may have a more uniform particle size as a horizontal reactor, and furthermore, it is possible to rotate the horizontal reactor to produce silicon nitride of more uniform quality.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

La présente invention concerne un appareillage pour la préparation continue de nitrure de silicium, comprenant : un réacteur de synthèse ayant une forme cylindrique en disposition transversale, et préparant du silicium-diamide (Si(NH)2), qui est un produit, et du chlorure d'ammonium (NH4Cl), qui est un sous-produit, par alimentation horizontale de tétrachlorosilane (SiCl4) gazeux et d'ammoniac (NH3) gazeux par des buses respectives ; un réacteur de décomposition thermique pour générer du chlorure de silicium amorphe par décomposition thermique de chlorure d'ammonium dans une première région et décomposition thermique du silicium-diamide dans une deuxième région, en étant alimenté par un mélange poudre du produit et du sous-produit provenant du réacteur de synthèse, la première région et la deuxième région étant montées en série ; et un réacteur de cristallisation pour cristalliser le nitrure de silicium cristallin (Si3N4 cristallin) par chauffage à 1200 à 1700 °C du nitrure de silicium amorphe évacué du réacteur de décomposition thermique.
PCT/KR2015/003687 2014-04-14 2015-04-13 Appareil et procédé de préparation continue de nitrure de silicium présentant une uniformité granulométrique améliorée Ceased WO2015160160A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201580020005.3A CN106232519A (zh) 2014-04-14 2015-04-13 提高粒子大小的均匀度的连续式氮化硅制备装置及其制备方法
JP2016562851A JP6283123B2 (ja) 2014-04-14 2015-04-13 粒子の大きさの均一度を向上させた連続式窒化珪素の製造装置及び製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2014-0043983 2014-04-14
KR1020140043983A KR101574888B1 (ko) 2014-04-14 2014-04-14 입자크기의 균일도를 향상시킨 연속식 질화규소 제조장치 및 제조방법

Publications (1)

Publication Number Publication Date
WO2015160160A1 true WO2015160160A1 (fr) 2015-10-22

Family

ID=54324293

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2015/003687 Ceased WO2015160160A1 (fr) 2014-04-14 2015-04-13 Appareil et procédé de préparation continue de nitrure de silicium présentant une uniformité granulométrique améliorée

Country Status (4)

Country Link
JP (1) JP6283123B2 (fr)
KR (1) KR101574888B1 (fr)
CN (1) CN106232519A (fr)
WO (1) WO2015160160A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106672922A (zh) * 2015-11-11 2017-05-17 新特能源股份有限公司 一种生产氮化硅的系统
CN109607581A (zh) * 2019-02-19 2019-04-12 河北工业大学 一种利用氯化铵与碳酸镁制取无水氯化镁的装置及方法
CN115432677A (zh) * 2021-06-04 2022-12-06 中国科学院过程工程研究所 一种撞击流耦合流化床制备高质量氮化硅粉体的系统及方法
CN118851109A (zh) * 2024-07-05 2024-10-29 厦门大学 一种直接雾化烧结氮化硅粉末的装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102708606B1 (ko) * 2016-11-24 2024-09-23 오씨아이 주식회사 미세 크기 질화규소 분말의 제조 방법
CN108928806B (zh) * 2017-05-25 2020-08-04 新疆晶硕新材料有限公司 一种合成硅亚胺的方法及硅亚胺
CN110182771B (zh) * 2019-06-10 2020-07-03 宁夏秦氏新材料有限公司 回转窑法合成硅氮化物的方法
KR20210088854A (ko) 2020-01-07 2021-07-15 삼성전기주식회사 연속 관형 반응기 및 이를 이용한 티탄산바륨의 제조 방법
CN116119627B (zh) * 2023-02-08 2024-07-23 华瓷聚力(厦门)新材料有限公司 一种高α相氮化硅粉末合成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4929432A (en) * 1988-10-19 1990-05-29 Union Carbide Corporation Process for producing crystalline silicon nitride powder
JPH05117035A (ja) * 1991-10-25 1993-05-14 Ube Ind Ltd 結晶質窒化珪素粉末の製造法
JP2010235339A (ja) * 2009-03-30 2010-10-21 Ube Ind Ltd 含窒素シラン化合物粉末及びその製造方法
KR20110112334A (ko) * 2008-12-13 2011-10-12 알즈켐 트로스트버그 게엠베하 고순도 질화규소 제조방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54124898A (en) * 1978-03-22 1979-09-28 Toyo Soda Mfg Co Ltd Preparation of silicon nitride
JPS54132500A (en) * 1978-04-05 1979-10-15 Toshiba Ceramics Co Manufacture of silicon nitride powder
JPS5782108A (en) * 1980-11-04 1982-05-22 Sumitomo Electric Ind Ltd Preparation of nitride ceramic powder
JPS5855316A (ja) * 1981-09-24 1983-04-01 Toyo Soda Mfg Co Ltd 窒化珪素粉末の製造法
JPS5892785A (ja) * 1981-11-25 1983-06-02 東芝セラミツクス株式会社 誘導加熱スライダ−炉
JPH01100005A (ja) * 1987-10-12 1989-04-18 Agency Of Ind Science & Technol 窒化けい素粉末の連続製造法
JP2726703B2 (ja) * 1989-06-21 1998-03-11 三井東圧化学株式会社 窒化アルミニウム粉末の製造方法
FR2652345A1 (fr) * 1989-09-27 1991-03-29 Rhone Poulenc Chimie Procede de preparation de nitrures metalliques.
DE4037449A1 (de) * 1990-11-24 1992-05-27 Hoechst Ag Verfahren zur herstellung von kugelfoermigem amorphem siliciumnitrid
JPH04209705A (ja) * 1990-11-30 1992-07-31 Sumitomo Chem Co Ltd 窒化珪素質粉末の製造方法
JP2907366B2 (ja) * 1993-05-18 1999-06-21 宇部興産株式会社 結晶質窒化珪素粉末の製造法
CN1189388C (zh) * 2002-06-28 2005-02-16 清华大学 一种氮化硅粉体转相的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4929432A (en) * 1988-10-19 1990-05-29 Union Carbide Corporation Process for producing crystalline silicon nitride powder
JPH05117035A (ja) * 1991-10-25 1993-05-14 Ube Ind Ltd 結晶質窒化珪素粉末の製造法
KR20110112334A (ko) * 2008-12-13 2011-10-12 알즈켐 트로스트버그 게엠베하 고순도 질화규소 제조방법
JP2010235339A (ja) * 2009-03-30 2010-10-21 Ube Ind Ltd 含窒素シラン化合物粉末及びその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106672922A (zh) * 2015-11-11 2017-05-17 新特能源股份有限公司 一种生产氮化硅的系统
CN106672922B (zh) * 2015-11-11 2019-01-22 新疆晶硕新材料有限公司 一种生产氮化硅的系统
CN109607581A (zh) * 2019-02-19 2019-04-12 河北工业大学 一种利用氯化铵与碳酸镁制取无水氯化镁的装置及方法
CN109607581B (zh) * 2019-02-19 2023-08-29 河北工业大学 一种利用氯化铵与碳酸镁制取无水氯化镁的装置及方法
CN115432677A (zh) * 2021-06-04 2022-12-06 中国科学院过程工程研究所 一种撞击流耦合流化床制备高质量氮化硅粉体的系统及方法
CN115432677B (zh) * 2021-06-04 2024-03-22 中国科学院过程工程研究所 一种撞击流耦合流化床制备高质量氮化硅粉体的系统及方法
CN118851109A (zh) * 2024-07-05 2024-10-29 厦门大学 一种直接雾化烧结氮化硅粉末的装置

Also Published As

Publication number Publication date
JP2017511295A (ja) 2017-04-20
KR101574888B1 (ko) 2015-12-07
KR20150118600A (ko) 2015-10-23
JP6283123B2 (ja) 2018-02-21
CN106232519A (zh) 2016-12-14

Similar Documents

Publication Publication Date Title
WO2015160160A1 (fr) Appareil et procédé de préparation continue de nitrure de silicium présentant une uniformité granulométrique améliorée
WO2013109105A1 (fr) Poudre de carbure de silicium et son procédé de fabrication
WO2015099333A1 (fr) Appareil et procédé de fabrication en continu de nitrure de silicium
WO2019221583A1 (fr) Aln lamellaire, procédé pour la fabrication de celui-ci et nanofeuille d'aln exfoliée à partir de celui-ci
WO2013154297A1 (fr) Appareil de traitement de substrat à élément chauffant ascendant/descendant
WO2020080856A1 (fr) Procédé de régénération de sous-produit de carbure de silicium produit par un processus de dépôt en une matière première monocristallinne
WO2017018772A1 (fr) Procédé d'ajustement de la sélectivité d'un silane d'ordre supérieur et procédé de production d'un silane d'ordre supérieur utilisant ce procédé
WO2013100455A1 (fr) Poudre de carbure de silicium, son procédé de fabrication et corps fritté en carbure de silicium, son procédé de fabrication
JP2711305B2 (ja) 流動床反応器及び方法
WO2010107262A2 (fr) Conteneur hermétique pour réaction de conversion thermique
WO2023167387A1 (fr) Méthode de synthèse de poudre de carbure de silicium
WO2016052841A1 (fr) Appareil et procédé de fabrication de poly-silicium au moyen d'un réacteur horizontal hybride à rendement élevé
WO2015099334A1 (fr) Appareil et procédé de production d'une poudre de nitrure de silicium
WO2013055016A1 (fr) Procédé de production pour poudre de carbure de silicium et poudre de carbure de silicium ainsi produite
WO2016080801A1 (fr) Procédé de production de nanofibres en nitrure de silicium
KR101545201B1 (ko) 열 플라스마 유동층 반응장치 및 이를 이용한 실리콘의 제조방법
WO2014084557A1 (fr) Composés de précurseur de silicium et procédé de dépôt de film mince contenant du silicium l'utilisant
WO2011129563A2 (fr) Procédé de préparation de fluorure d'hydrogène anhydre en utilisant du tétrafluorure de sodium-aluminium et dispositif de réaction pour celui-ci
EP2473442A1 (fr) Procédé de production de tétrafluorosilane en continu à partir de divers matériaux fluorés, de silice amorphe et d'acide sulfurique
CN101555012B (zh) 一种制备多晶硅的方法
WO2024214936A1 (fr) Procédé de production de sulfure de lithium
CN116815318B (zh) 一种制备高纯度SiC多晶粉体的装置和方法
WO2024151153A1 (fr) Procédé de production de sulfure de lithium
WO2015174705A1 (fr) Dispositif de fabrication de silicium polycristallin à l'aide d'un réacteur horizontal et son procédé de fabrication
WO2017018771A1 (fr) Procédé de préparation de tétrasilane et de pentasilane

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15780312

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2016562851

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15780312

Country of ref document: EP

Kind code of ref document: A1