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WO2015152559A1 - Low refractive composition, preparation method therefor, and transparent conductive film - Google Patents

Low refractive composition, preparation method therefor, and transparent conductive film Download PDF

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Publication number
WO2015152559A1
WO2015152559A1 PCT/KR2015/002883 KR2015002883W WO2015152559A1 WO 2015152559 A1 WO2015152559 A1 WO 2015152559A1 KR 2015002883 W KR2015002883 W KR 2015002883W WO 2015152559 A1 WO2015152559 A1 WO 2015152559A1
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group
low refractive
carbon atoms
composition
layer
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PCT/KR2015/002883
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French (fr)
Korean (ko)
Inventor
류무선
김원국
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LX Hausys Ltd
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LG Hausys Ltd
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Priority to CN201580018312.8A priority Critical patent/CN106164711A/en
Priority to JP2016560665A priority patent/JP2017522581A/en
Publication of WO2015152559A1 publication Critical patent/WO2015152559A1/en
Anticipated expiration legal-status Critical
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • G02B1/113Anti-reflection coatings using inorganic layer materials only
    • G02B1/115Multilayers
    • G02B1/116Multilayers including electrically conducting layers
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/16Optical coatings produced by application to, or surface treatment of, optical elements having an anti-static effect, e.g. electrically conducting coatings

Definitions

  • a low refractive index composition a manufacturing method thereof, and a transparent conductive film.
  • BACKGROUND Electronic devices such as smart phones, tablet PCs, ATMs, notebook computers, TVs, and the like having a touch screen function include a touch screen panel capable of inputting or manipulating information in response to a touch and a display device such as an LCD or an OLED.
  • the touch screen panel may include a transparent conductive film to simultaneously implement transparency and electrical conductivity to exert a performance of responding by touch.
  • the touch screen panel includes an optical method, an ultrasonic method, a capacitive method, a resistive touch panel, and the like according to the method of position detection, and sequentially a transparent conductive film, for example, OCA (optically clear).
  • OCA optical clear
  • It can be formed as a laminate of a multilayer structure including an adhesive (optically clear resin), an optical adhesive film such as OCR (Optically Clear Resin), a glass substrate or a transparent plastic substrate.
  • Such a transparent conductive film includes a base layer and a conductive layer including an electrode formed of a conductive material, for example, indium tin oxide (ITO), and is usually wound in a roll form or laminated with a plurality of films. Therefore, the transparent conductive films are stuck to each other, and there is a problem in that the performance of the transparent conductive film is degraded in the process of spreading the same to apply the same to the touch screen panel.
  • ITO indium tin oxide
  • silver nanowires or the like can be used as a material for forming the electrode of the conductive layer.
  • the width or width of the electrode pattern can be used.
  • the electrode pattern may be visible to the consumer using the product and the visibility may be degraded.
  • the present invention provides a low refractive index composition that does not reduce the electrical conductivity while implementing excellent blocking prevention performance and excellent optical properties.
  • a method of preparing the low refractive index composition is provided.
  • a low refractive index layer formed by the low refractive index composition to provide a transparent conductive film that implements excellent anti-blocking performance, excellent optical properties and excellent electrical conductivity.
  • a low refractive index composition comprising an organopolysiloxane (organopolysiloxane) and inorganic particles having an average diameter of about 30nm to about 70nm.
  • the inorganic particles may be included in an amount of about 0.5 parts by weight to about 20 parts by weight based on about 100 parts by weight of the organopolysiloxane.
  • the organopolysiloxane is an alkyl group of 1 to 18 carbon atoms, an alkoxy group of 1 to 18 carbon atoms, an ester group of 2 to 6 carbon atoms, an epoxy group of 2 to 12 carbon atoms, an alkenyl group of 2 to 12 carbon atoms, 6 carbon atoms It may include at least one functional group selected from the group consisting of 12 to 12 aromatic groups, 3 to 18 carbon atoms, acrylic group, glycidyl group, amine group, thiol group, halogen group and combinations thereof.
  • the organopolysiloxane may comprise a linear structure, a network structure, or both.
  • the organopolysiloxane may be formed by a sol-gel reaction of a composition comprising a silane compound of Formula 1 and a silane compound of Formula 2 below:
  • R 1 is an alkyl group having 1 to 18 carbon atoms, an ester group having 2 to 6 carbon atoms, an epoxy group having 2 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, and having 6 to 12 carbon atoms Group, an acryl group having 3 to 18 carbon atoms, a glycidyl group, an amine group, a thiol group or a halogen group, and each of R 2 and R 3 is independently H or an alkyl group having 1 to 18 carbon atoms, and x is 1, 2, or 3.
  • the inorganic particles may be further mixed and included in the composition.
  • the organopolysiloxane may have a weight average molecular weight of about 3,000 g / mol to about 55,000 g / mol.
  • the inorganic particles may include at least one particle selected from the group consisting of silica particles, alumina particles, zirconium oxide particles, titanium oxide particles, antimony oxide particles, and combinations thereof.
  • the low refractive index composition may not include or further include a substituted or unsubstituted monomolecular alkoxysilane compound.
  • it provides a transparent conductive film comprising a low refractive index layer formed by the low refractive index composition.
  • the low refractive layer may be formed with fine irregularities on the upper surface, the fine irregularities may be formed by the inorganic particles.
  • the low refractive layer may have a thickness of about 10 nm to about 50 nm.
  • the low refractive index layer may have a refractive index of about 1.40 to about 1.50.
  • the low refractive index layer may further include a high refractive index layer and a base layer sequentially, and may further include a conductive layer on top of the low refractive layer.
  • the transparent conductive film may have a light transmittance of about 85% or more and a haze of about 0.1% to about 0.8%.
  • preparing a raw material composition comprising a silane compound of Formula 1, a silane compound of Formula 2 and inorganic particles having an average diameter of about 30nm to about 70nm; And preparing a low refractive composition by performing a sol-gel reaction on the raw material composition. It provides a method for producing a low refractive index composition comprising:
  • R 1 is an alkyl group having 1 to 18 carbon atoms, an ester group having 2 to 6 carbon atoms, an epoxy group having 2 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, and having 6 to 12 carbon atoms Group, an acryl group having 3 to 18 carbon atoms, a glycidyl group, an amine group, a thiol group or a halogen group, and each of R 2 and R 3 is independently H or an alkyl group having 1 to 18 carbon atoms, and x is 1, 2, or 3.
  • the raw material composition may be prepared by mixing the inorganic particles in an amount of about 0.5 parts by weight to about 20 parts by weight based on a total of about 100 parts by weight of the silane compound of Formula 1 and the silane compound of Formula 2.
  • an organopolysiloxane may be formed by chemical reaction between the silane compounds.
  • the low refractive index composition may not reduce the electrical conductivity while implementing excellent blocking prevention performance and excellent optical properties.
  • FIG. 1 is a schematic cross-sectional view showing two cross-sectional views of two examples, (a) and (b) of a transparent conductive film according to another embodiment of the present invention.
  • any configuration is formed on the “top (or bottom)" of the substrate or “top (or bottom)” of the substrate means that any configuration is formed in contact with the top (or bottom) of the substrate.
  • it is not limited to not including other configurations between the substrate and any configuration formed on (or under) the substrate.
  • a low refractive index composition comprising an organopolysiloxane and inorganic particles having an average diameter of, for example, about 30 nm to about 70 nm.
  • the average diameter of the inorganic particles may be about 35nm to about 60nm.
  • the transparent conductive film is wound in a roll form, or a plurality of films are stacked and distributed.
  • the transparent conductive films adhere to each other and are transparent or conductive in the process of being unfolded or separated from each other for application to a touch screen panel.
  • the performance of the film can be significantly reduced. Accordingly, in order to prevent adhesion between the transparent conductive films in the distribution process, by including the inorganic particles in the hard coating layer to form protrusions, it is possible to reduce the area of contact with each other to weaken the adhesion degree, thereby improving the performance of the transparent conductive film It exhibits anti-blocking performance that can be unfolded or peeled off without being degraded.
  • inorganic particles when inorganic particles are included in the hard coating composition including acrylic resin as the binder resin, the compatibility between the acrylic resin and the inorganic particles is low, and the physical properties such as specific gravity of the binder resin, surface energy, and the thickness of the hard coating layer are used. In consideration of this, in order to form protrusions on the hard coating layer, inorganic particles having a large average diameter must be included, so that the defect rate of the surface appearance during processing increases and the haze increases, thereby further deteriorating the optical properties and the electrical conductivity of the conductive layer. .
  • ITO indium tin
  • silver nanowires and the like may be used as a material for forming the electrode of the conductive layer.
  • the width or width of the electrode pattern is relatively increased so that the product does not satisfy the index matching property.
  • the electrode pattern may be visually seen by the consumer to use, and thus index matching or visibility may be degraded.
  • the specific properties of the organopolysiloxane such as surface energy and low refractive index Given the thickness of the layer, it is possible to reduce the average diameter of the inorganic particles required to achieve the antiblocking performance, that is, the antiblocking performance, to an appropriately small level.
  • the transparent conductive film including the low refractive index layer formed by the low refractive index composition exhibits excellent anti-blocking performance while in the coating process of the low refractive index composition, the defect rate of the surface appearance is reduced, and the refractive index and the haze are at an appropriate level.
  • the annealing process involved in forming the conductive layer on the upper portion of the low refractive index layer may be more easily performed, thereby lowering the electrical resistance of the conductive layer. Therefore, excellent electrical conductivity can be achieved.
  • the low refractive index composition may include, for example, about 0.5 parts by weight to about 20 parts by weight, and specifically about 7 parts by weight to about 13 parts by weight, based on about 100 parts by weight of the organopolysiloxane. can do.
  • the low refractive index composition may include, for example, about 0.5 parts by weight to about 20 parts by weight, and specifically about 7 parts by weight to about 13 parts by weight, based on about 100 parts by weight of the organopolysiloxane. can do.
  • the antiblocking performance may not be sufficiently realized.
  • the electrical properties may be impaired after the conductive layer is formed. There is a problem that can be reduced.
  • the inorganic particles may include, for example, at least one particle selected from the group consisting of silica particles, alumina particles, zirconium oxide particles, titanium oxide particles, antimony oxide particles, and combinations thereof.
  • inorganic particles in the form of powder were mixed with the composition for hard coating, thereby agglomeration or precipitating during the coating process, thereby preventing uniformity in blocking performance and low refractive index.
  • the low refractive index composition may include inorganic particles in the form of a sol, that is, inorganic particles containing sol to improve the dispersibility, thereby achieving both the anti-blocking performance and low refractive index at a uniform level.
  • the inorganic particles may be dispersed in a dispersion medium and included in the form of a dispersion sol.
  • the inorganic particles may be, for example, dispersed in a dispersion medium such as water or an organic solvent, and may be included in a colloidal phase in which solid content of the inorganic particles is about 5 wt% to about 40 wt%, but is not limited thereto. It doesn't happen.
  • a dispersion medium such as water or an organic solvent
  • Organic solvents usable as the dispersion medium include alcohols such as methanol, isopropyl alcohol, IPA, ethylene glycol, butanol, etc .; Ketones such as methyl ethyl ketone and methyl iso butyl ketone (MIBK); Aromatic carbon hydrogens such as toluene and xylene; Amides such as dimethyl formamide, dimethyl acetamide and N-methyl pyrrolidone; Esters such as ethyl acetate, butyl acetate and ⁇ -butyrolactone; Ethers such as tetrahydrofuran and 1,4-dioxane; Or mixtures thereof.
  • alcohols such as methanol, isopropyl alcohol, IPA, ethylene glycol, butanol, etc .
  • Ketones such as methyl ethyl ketone and methyl iso butyl ketone (MIBK)
  • MIBK methyl iso buty
  • the inorganic particles may have an average diameter of, for example, about 30 nm to about 70 nm, and specifically about 35 nm to about 60 nm.
  • the average diameter means the average value of the particle diameters measured for each particle.
  • the annealing process is essentially applied in the process of forming the conductive layer on the low refractive index layer.
  • the average diameter of the inorganic particles is too large to interfere with the annealing process, thereby increasing the electrical resistance of the conductive layer, thereby lowering the electrical conductivity, thereby causing malfunction of the touch screen panel, and increasing the haze.
  • the adhesion to the high refractive index layer and the conductive layer laminated on both surfaces of the low refractive index layer can be further lowered.
  • the low refractive index composition may include, for example, about 10% to about 80% by weight of the organopolysiloxane. By including a content within the above range can be formed at a low level of the refractive index can be easily formed a low refractive index layer.
  • the organopolysiloxane is an alkyl group of 1 to 18 carbon atoms, an alkoxy group of 1 to 18 carbon atoms, an ester group of 2 to 6 carbon atoms, an epoxy group of 2 to 12 carbon atoms, an alkenyl group of 2 to 12 carbon atoms, 6 carbon atoms It may include at least one functional group selected from the group consisting of 12 to 12 aromatic groups, 3 to 18 carbon atoms, acrylic group, glycidyl group, amine group, thiol group, halogen group and combinations thereof.
  • the functional group the chemical reaction can be easily carried out in various kinds of organic solvents, so that the processability and compatibility are excellent, and coating can be easily performed on various kinds of substrates, and excellent adhesion can be realized.
  • the aromatic group means a substituent in which all elements of the cyclic substituent have p-orbitals, and these p-orbitals form conjugation.
  • a phenyl group, an aryl group, etc. are mentioned.
  • examples of the halogen group include -F, -Cl, -Br, -I and the like.
  • the organopolysiloxane may include a linear structure, a network structure, or both. That is, the organopolysiloxane may be formed in a linear structure by combining in a chain structure by a siloxane bond, that is, Si-O-Si bond, may be formed in a network structure by combining in a three-dimensional structure, including all It may be formed in a structure to.
  • the network structure may include a structure partially opened by the functional group, and specifically, the structure of the network structure is partially broken by the functional group may include an open structure.
  • the organopolysiloxane When the organopolysiloxane includes a linear structure, the solidification rate is low, so that excellent process stability can be realized, and when the coating is applied to the substrate, the flatness is more excellent. For example, indium tin oxide (ITO) when forming a conductive layer ) Crystallization can be facilitated to improve the electrical conductivity.
  • ITO indium tin oxide
  • the organopolysiloxane includes a reticulated structure, due to its structural characteristics, excellent chemical resistance and excellent solvent resistance can be realized, and thus, acidic or basic used in an etching process or a washing process required for forming a conductive layer. Unaffected by chemicals, excellent stability can be achieved.
  • the organopolysiloxane may have a weight average molecular weight of about 3,000 g / mol to about 55,000 g / mol.
  • the organopolysiloxane may be formed by a sol-gel reaction of a raw material composition comprising a silane compound of Formula 1 and a silane compound of Formula 2 below:
  • R 1 is an alkyl group having 1 to 18 carbon atoms, an ester group having 2 to 6 carbon atoms, an epoxy group having 2 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, and having 6 to 12 carbon atoms Group, an acryl group having 3 to 18 carbon atoms, a glycidyl group, an amine group, a thiol group or a halogen group, and each of R 2 and R 3 is independently H or an alkyl group having 1 to 18 carbon atoms, and x is 1, 2, or 3.
  • the aromatic group means a substituent in which all elements of the cyclic substituent have p-orbitals, and these p-orbitals form conjugation.
  • a phenyl group, an aryl group, etc. are mentioned.
  • examples of the halogen group include -F, -Cl, -Br, -I and the like.
  • precursor molecules such as a silane compound may undergo a hydrolysis reaction, a condensation reaction, a dehydration condensation reaction, a hydrolysis-polycondensation reaction, and the like to crosslink with a linear structure or a three-dimensional network structure. It may mean a reaction to form.
  • the organopolysiloxane may be formed by chemical reaction between the silane compounds during the sol-gel reaction of the raw material composition.
  • the silane compounds of Formula 1 may react with each other, or the silane compounds of Formula 2 may react with each other, or the silane compound of Formula 1 and the silane compound of Formula 2 may react with each other, or a combination thereof.
  • the organopolysiloxane may be formed by reacting in a form.
  • the chemical reaction may include, for example, at least one selected from the group consisting of a hydrolysis reaction, a condensation reaction, a dehydration condensation reaction, a hydrolysis-polycondensation reaction, and a combination thereof.
  • Silane bonds that is, Si-O-Si bonds, may be formed between the silane compound of Formula 1, the silane compound of Formula 2, or both, and thus the organopolysiloxane may be formed.
  • the silane compound of Formula 1 may be trimethoxysilane, triethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, n-propyltrimeth Methoxysilane, n-propyltriethoxysilane, isobutyltriethoxysilane, cyclohexyltrimethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, allyl tri Methoxysilane allyltriethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, trichloromethylsilane, trichlorochloromethyl
  • the silane compound represented by Formula 2 is tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetraisopropoxysilane, tetra-n-butoxysilane, tetra-sec-butoxysilane, tetra-tert-butoxy And at least one selected from the group comprising silanes, and combinations thereof.
  • the weight ratio of the silane compound of Formula 1 to the silane compound of Formula 2 included in the raw material composition may be about 1: 5 to about 1:99.
  • the ratio is less than about 1: 5
  • the organic portion may be so large that the coating may be damaged by the basic chemicals available in the washing process, thereby changing the index matching. Too much of the coating's flexibility can be degraded, resulting in reduced adhesion and oxidation.
  • the raw material composition may include, for example, about 1 wt% to about 19 wt% of the silane compound of Formula 1, but is not limited thereto.
  • the inorganic particles may be further mixed in the composition before the sol-gel reaction.
  • the inorganic particles are further mixed with the composition in which the organopolysiloxane is already formed, the dispersibility may be reduced.
  • the low refractive index composition is the inorganic particles between the organopolysiloxane which is a result of the reaction between the silane compounds of the formula (1) by a sol-gel reaction of the composition containing both the silane compound of the formula (1) and the inorganic particles Can be effectively dispersed, thereby achieving a more uniform level of anti-blocking performance, low refractive index and optical properties.
  • the conductive layer film formation is performed by, for example, a sputtering method under vacuum conditions.
  • the monomolecular alkoxysilane compound which is a volatile organic compound (VOC)
  • VOC volatile organic compound
  • the layer formation may interfere with the annealing process, thereby increasing the electrical resistance of the conductive layer, thereby lowering the electrical conductivity.
  • the migration phenomenon of the monomolecular alkoxysilane compound may occur in the low refractive layer, and the haze may be increased to decrease the surface properties, thereby reducing optical properties and electrical conductivity. have.
  • the low refractive index composition may not include or further include a substituted or unsubstituted monomolecular alkoxysilane compound. Specifically, it may not include a substituted or unsubstituted single-molecule alkoxysilane compound, and thus, when forming a conductive layer, the mono-molecular alkoxysilane compound, which is a volatile organic compound, is not discharged, and thus an annealing process may be easily performed, thereby providing excellent electrical The conductivity can be implemented, and at the same time, it can prevent the transition phenomenon at high temperature and high humidity conditions, thereby maintaining the haze and surface properties to implement excellent reliability.
  • halogen atom F, Cl, Br, or I
  • hydroxy group nitro group
  • cyano group amino group
  • carboxyl group alkyl group having 1 to 30 carbon atoms
  • Cycloalkyl groups having 3 to 30 carbon atoms
  • Aryl groups having 6 to 30 carbon atoms
  • the alkyl group may be straight or branched.
  • the monomolecular alkoxysilane compound is meant to include all kinds known in the art, for example, may include at least one selected from the kind of silane compound of Formula 1, but is not limited thereto.
  • the low refractive index composition may further include at least one selected from the group consisting of an acid catalyst, water, an organic solvent, and a combination thereof.
  • an inorganic acid or an organic acid may be used, and specifically, nitric acid, hydrochloric acid, sulfuric acid, acetic acid, or the like may be used.
  • the organic solvent may be, for example, alcohols such as methanol, isopropyl alcohol, IPA, ethylene glycol, butanol, etc .; Ketones such as methyl ethyl ketone and methyl iso butyl ketone (MIBK); Esters such as ethyl acetate, butyl acetate and ⁇ -butyrolactone; Ethers such as tetrahydrofuran and 1,4-dioxane; And at least one selected from the group consisting of a combination thereof.
  • alcohols such as methanol, isopropyl alcohol, IPA, ethylene glycol, butanol, etc .
  • Ketones such as methyl ethyl ketone and methyl iso butyl ketone (MIBK)
  • Esters such as ethyl acetate, butyl acetate and ⁇ -butyrolactone
  • Ethers such as tetrahydrofuran and 1,
  • the present invention provides a transparent conductive film comprising a low refractive index layer formed by the low refractive index composition.
  • the low refractive index composition is as described above in one embodiment, the low refractive index layer is provided with anti-blocking performance may serve as an anti-blocking low refractive layer.
  • the transparent conductive film including the low refractive index layer provides excellent blocking prevention performance, while in the coating process of the low refractive index composition, defect rate of the surface appearance is reduced, refractive index and haze are formed at an appropriate level, and excellent index matching is achieved.
  • the annealing process involved in forming the conductive layer on the upper portion of the low refractive index layer may be more easily performed, thereby lowering the electrical resistance of the conductive layer. Therefore, excellent electrical conductivity can be achieved.
  • the low refractive index layer may be formed by applying the low refractive index composition to the upper portion of the high refractive index layer, which may be included in the lower portion, as described below, and then performing a thermosetting reaction.
  • Application of the low refractive index composition may be, for example, gravure coating, slot die coating, spin coating, spray coating, bar coating, dip coating, or the like. It is not limited to this
  • thermosetting reaction may be performed by heat treatment at a temperature of about 100 °C to about 170 °C, but is not limited thereto.
  • the aging process may be further performed after the thermosetting reaction, and the aging process may be performed according to conditions and methods known in the art.
  • the low refractive index layer may have fine unevenness formed on an upper surface thereof, and the fine unevenness may be formed by the inorganic particles. For example, a portion of the inorganic particles may protrude from the surface of the low refractive index layer to cause the fine unevenness. In some embodiments, other portions of the inorganic particles may be present in a state buried in the low refractive layer. In addition, the average diameter of the inorganic particles may be larger than the thickness of the low refractive layer, thereby forming the fine irregularities more easily.
  • the fine concavo-convex shape may be formed by inorganic particles having an average diameter of about 30 nm to about 70 nm when the low refractive index composition is applied, and specifically, when the low refractive index composition is applied to the base layer, the inorganic particles Since the average diameter of the larger than the thickness of the low refractive index layer is protruded, the fine concave-convex shape can be formed more easily, and thus the low refractive layer can implement a better blocking prevention performance.
  • the low refractive layer may have a thickness of about 10 nm to about 50 nm.
  • the thickness of the low refractive index layer is less than about 10 nm, there is a fear of visibility deterioration due to optical interference, and when the thickness of the low refractive index layer is greater than about 50 nm, the transmittance is too low so that optical properties may be degraded. It can achieve excellent visibility and excellent optical properties by maintaining high light transmittance and low haze while satisfying the properties.
  • the refractive index of the low refractive index layer may be about 1.40 to about 1.50.
  • FIG. 1 schematically shows each cross section of two examples, (a) and (b), of a transparent conductive film according to another embodiment of the present invention.
  • the transparent conductive film may further include a high refractive index layer and a base layer sequentially below the low refractive layer, and may further include a conductive layer on the low refractive layer.
  • a high refractive layer, the low refractive layer, and a conductive layer may be sequentially included on one surface of the base layer.
  • the high refractive index layer serves to improve insulation properties and transmittance between the substrate layer and the conductive layer.
  • the high refractive layer may be formed of a material including an inorganic material, an organic material, or both.
  • the inorganic material is in, for example, SiO 2, MgF 2, and the like Al 2 O 3, NaF, Na 3 AlF 6, LiF, CaF 2, BaF 2, LaF 3, CeF 3, wherein the organic material is, for example , Melamine resins, alkyd resins, urethane resins, acrylic resins, siloxane based polymers, organosilane condensates and the like can be used.
  • the high refractive layer may be formed using a coating method known in the art, such as thermal curing, photocuring, spraying, sputtering, etc. after coating according to the type of the material.
  • the thickness of the high refractive layer may be about 15nm to about 100nm.
  • the thickness of the high refractive layer can be improved excellent transmittance and visibility, it is possible to reduce the occurrence of cracks and curl (Curl) due to the stress.
  • the refractive index of the high refractive layer may be about 1.65 to about 1.8.
  • the refractive index of the high refractive layer may be about 1.65 to about 1.8.
  • the base layer is a transparent base layer, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polycarbonate (PC), polypropylene (PP), polyvinyl chloride (PVC), polyethylene (PE), polymethyl methacrylate (PMMA), ethylene vinyl alcohol (EVA), polyvinyl alcohol (PVA) and combinations thereof may be formed of a material comprising at least one selected from the group consisting of However, it is not limited thereto.
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PES polyethersulfone
  • PC polycarbonate
  • PP polypropylene
  • PVC polyvinyl chloride
  • PE polyethylene
  • PMMA polymethyl methacrylate
  • EVA ethylene vinyl alcohol
  • PVA polyvinyl alcohol
  • the substrate layer may be a film of a single layer or a multi-layer structure, the total thickness of the substrate layer may be, for example, about 20 ⁇ m to about 500 ⁇ m.
  • the conductive layer may include, for example, indium tin oxide (ITO), zinc oxide (ZnO), zinc tin oxide (ZTO), fluorine-doped tin oxide (FTO), It may include at least one selected from the group consisting of silver nanowires (Al-doped ZnO, AZO), and combinations thereof.
  • ITO indium tin oxide
  • ZnO zinc oxide
  • ZTO zinc tin oxide
  • FTO fluorine-doped tin oxide
  • It may include at least one selected from the group consisting of silver nanowires (Al-doped ZnO, AZO), and combinations thereof.
  • the conductive layer may have a thickness of about 5 nm to about 50 nm, and by maintaining the thickness of the conductive layer in the range, excellent optical properties may be realized without excessively increasing the total thickness of the transparent conductive film.
  • It may further include a hard coating layer in contact with one side or both sides of the base layer, accordingly the refractive index is properly adjusted while supporting and protecting the low refractive index layer and the high refractive index layer to improve the hardness of the transparent conductive film Phenomenon such as light interference may occur, and the index matching may be more easily satisfied.
  • the hard coating layer may be formed by photocuring a hard coating layer composition including, for example, at least one selected from the group consisting of an ultraviolet curable resin, nano inorganic particles having an average diameter of about 1 nm to about 30 nm, a photopolymerization initiator, and a combination thereof.
  • the nano-inorganic particles having an average diameter of about 1 nm to about 30 nm may be embedded in the hard coating layer to improve surface hardness, but hardly prevent blocking performance.
  • the average diameter of the inorganic particles should be about 1 ⁇ m or more.
  • the surface appearance defects may occur while coating the haze. It may increase too much to deteriorate the optical properties, and when it is produced continuously in the manufacturing process, it may be difficult to have uniform physical properties for each product.
  • the hard coating layer may have a thickness of about 900 nm to about 2000 nm. If the thickness of the hard coating layer is less than about 900nm can not implement the surface hardness of the transparent conductive film to a sufficient level, the durability may be low, if the hard coating layer is greater than about 2000nm there is a fear that the hard coating layer curling (Curling), the range By having a thickness of the curling can be prevented while implementing an excellent surface hardness.
  • the writing rate of the hard coat layer may be about 1.45 to about 1.7, but is not limited thereto.
  • the light transmittance of the transparent conductive film may be about 85% or more, and the haze may be about 0.1% to about 0.8%, and specifically, the light transmittance may be about 87% to about 92%.
  • the light transmittance and the haze mean a value measured based on, for example, a transparent conductive film having a thickness of about 100 ⁇ m.
  • preparing a raw material composition comprising a silane compound of Formula 1, a silane compound of Formula 2 and inorganic particles having an average diameter of 30nm to 70nm; Proceeding with the sol-gel reaction with respect to the raw material composition to produce a low refractive index composition provides a method for producing a low refractive index composition comprising:
  • R 1 is an alkyl group having 1 to 18 carbon atoms, an ester group having 2 to 6 carbon atoms, an epoxy group having 2 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, and an aromatic group having 6 to 12 carbon atoms ,
  • the raw material composition may be prepared by mixing the inorganic particles in an amount of about 0.5 parts by weight to about 20 parts by weight based on 100 parts by weight of the total of the silane compound of Formula 1 and the silane compound of Formula 2, and specifically, May comprise about 7 parts by weight to about 13 parts by weight.
  • the raw material composition may be prepared by further mixing at least one selected from the group consisting of an acid catalyst, water, an organic solvent, and a combination thereof, and the acid catalyst and the organic solvent are as described above in one embodiment.
  • the silane compounds may be chemically reacted with each other to form an organopolysiloxane, and the organopolysiloxane and the chemical reaction are the same as described above in one embodiment.
  • the total content of the sum of the content of each of the silane compound of Formula 1 and the silane compound of Formula 2 included in the raw material composition such that the low refractive index composition comprises about 10% to about 80% by weight of the organopolysiloxane Can be adjusted.
  • the raw material composition may be prepared such that a weight ratio of the silane compound of Formula 1 to the silane compound of Formula 2 is about 1: 5 to about 1:99.
  • a weight ratio of the silane compound of Formula 1 to the silane compound of Formula 2 is about 1: 5 to about 1:99.
  • the raw material composition may be prepared such that the silane compound of Formula 1 is included, for example, in about 1% by weight to about 19% by weight, but is not limited thereto.
  • the sol-gel reaction may be performed by stirring at a temperature of about 20 ° C. to about 60 ° C. for about 8 hours to about 48 hours, but is not limited thereto.
  • chemical reactions such as hydrolysis reaction, condensation reaction and the like sufficiently proceed to form the organopolysiloxane more easily.
  • the organic solvent may be appropriately mixed and diluted with the low refractive index composition according to the purpose and use of the invention within the scope of the present invention.
  • the organic solvent is as described above in one embodiment.
  • TEOS tetra-ethoxyorthosilicate
  • ILC silica particle dispersion sol
  • MEK-ST-up water
  • ethanol and 1M with an average diameter of 50 nm Nitric acid was mixed to prepare a raw material composition, and the raw material composition included 10 parts by weight of the silica particles based on 100 parts by weight of the total of the trimethoxy (methyl) silane and the tetra-ethoxy orthosilicate (TEOS).
  • the raw material composition was stirred at 40 ° C. for 24 hours to proceed with a sol-gel reaction to prepare a low refractive composition, and the trimethoxy (methyl) silane and the tetra-ethoxy orthosilicate in the low refractive composition
  • Organopolysiloxanes were formed by chemical reaction between silane compounds consisting of (TEOS).
  • the low refractive index composition included 30% by weight of the organopolysiloxane, and included 10 parts by weight of the silica particles based on 100 parts by weight of the organopolysiloxane.
  • a low refractive index composition was prepared in the same manner as in Preparation Example 1-1, except that an average diameter of 30 nm silica particle dispersion sol (ILC, MEK-ST) was used.
  • a low refractive index composition was prepared in the same manner as in Preparation Example 1-1, except that an average diameter of 70 nm silica particle dispersion sol (ILC, IPAST-up) was used.
  • a low refractive index composition was prepared in the same manner as in Preparation Example 1-1, except that silica particle dispersion sol having a mean diameter of 20 nm (ILC, IPAST) was used.
  • a low refractive index composition was prepared in the same manner as in Preparation Example 1-1, except that silica particle dispersion sol (ILSIN, MEK20) having an average diameter of 200 nm was used.
  • silica particle dispersion sol ILSIN, MEK20
  • a low refractive index composition was prepared in the same manner as in Preparation Example 1-1, except that silica particles were not mixed.
  • the hard coating layer composition of Preparation Example 3 was coated on a 50 ⁇ m PET film using a Meyer bar to have a dry film thickness of 1.5 ⁇ m, and cured by irradiating 300mJ UV light with 180W high pressure mercury or the like to include a hard coating layer on the cross section.
  • the film was produced.
  • a transparent conductive film was prepared in the same manner as in Example 1, except that the low refractive layer was formed using the low refractive composition of Preparation Example 1-2.
  • a transparent conductive film was prepared in the same manner as in Example 1 except that the low refractive layer was formed using the low refractive composition of Preparation Example 1-3.
  • a transparent conductive film was prepared in the same manner as in Example 1, except that the low refractive layer was formed using the low refractive composition of Preparation Example 1-4.
  • a transparent conductive film was prepared in the same manner as in Example 1, except that the low refractive layer was formed using the low refractive composition of Preparation Example 1-5.
  • a transparent conductive film was prepared in the same manner as in Example 1 except that the low refractive layer was formed using the low refractive composition of Preparation Example 1-6.
  • Measuring method After cutting the transparent conductive film of each of the Examples and Comparative Examples to the size of 10cm x 10cm (width X length) to prepare 10 specimens, and then laminated the 10 specimens, the film of the 10-layer structure formed according to the metal plate In between, and placed on top of the metal plate placed on the top using a 5kg weight under pressure at a temperature of 50 °C for 24 hours and then taken out to remove the film of the 10-layer structure one by one to evaluate the anti-blocking performance.
  • the case where the film is well separated and the blocking prevention performance is excellent by maintaining the physical properties of the transparent conductive film is marked as “ ⁇ ”, and the film is not separated well so that the physical property of the transparent conductive film is degraded and the blocking prevention performance is inferior.
  • the case is marked with "X".
  • Measuring method The surface appearance of each of the transparent conductive films of Examples and Comparative Examples was visually observed to evaluate whether the pattern formed of the conductive material inside the conductive layer was visible. When the pattern formed of the conductive material is not visible at all, the index matching or visibility is excellent, and the case is displayed as " ⁇ ". It was.
  • Measuring method As described above in Examples 1-3 and Comparative Examples 1-3, after forming a low refractive layer in each of the high refractive layer, such as white turbidity, cracks or partial aggregation in the surface appearance of each low refractive layer It was observed by the naked eye to evaluate the coating property. Specifically, the case where the coating property is excellent due to no white cloud, crack, or partial agglomeration does not occur is indicated as “ ⁇ ”, and the case where the coating property is normal due to the low level is indicated as “ ⁇ ”, and is markedly generated. In this case, the inferior coating property was indicated by "X".
  • the electrical resistance was measured by using an electrical resistance measuring instrument (MITSUBISHI CHEMICAL, LORESTA-GP [MCP-T610]) to evaluate the electrical conductivity. The better the electrical conductivity is.
  • MITSUBISHI CHEMICAL, LORESTA-GP [MCP-T610] an electrical resistance measuring instrument
  • the sheet resistance is measured to be 150 ⁇ / ⁇ or less and the electrical conductivity is excellent, it is marked as “ ⁇ ”, and it is measured to be 150 ⁇ 170 ⁇ / ⁇ , and the normal case is marked as “ ⁇ ” and is measured to be 170 ⁇ / ⁇ or more. Inferior cases are marked with “X”.
  • Each transparent conductive film was measured using a hazemeter (Nippon Denshoku, NDH 5000). The thickness of the said transparent conductive film was about 100 micrometers.
  • Example 1 Example 2
  • Example 3 Comparative Example 1 Comparative Example 2 Comparative Example 3 Average diameter of silica particles (nm) 50 30 70 20 200 - Anti-blocking performance ⁇ ⁇ ⁇ X ⁇ X Index matching ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ Coating ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ Electrical conductivity ⁇ ⁇ ⁇ ⁇ X ⁇ Light transmittance (%) 89.2 89.5 88.9 89.5 87.9 89.5 Haze (%) 0.4 0.4 0.5 0.3 1.1 0.3
  • the transparent conductive film according to Examples 1 to 3 was evaluated to have almost excellent physical properties, and in particular, in the case of Example 1, the anti-blocking performance, the index matching property, and the electrical conductivity were simultaneously implemented. It was clearly confirmed.
  • the silica particles did not interfere with the annealing process when the conductive layer was formed, and thus the electrical conductivity before the distribution process was good, but the anti-blocking performance was particularly low. Therefore, when rolled up or rolled up, or when a plurality of films are stacked and distributed, they stick to each other and are damaged in the process of being unfolded or peeled off for application to a touch screen panel, etc., thereby significantly reducing the performance of the transparent conductive film. It can be clearly expected that the role as the transparent conductive film cannot be properly performed. Moreover, in the case of the transparent conductive film which concerns on the comparative example 2, the index matching property and coating property were also evaluated to be lower than the comparative example 1.
  • the transparent conductive film according to Comparative Example 2 was evaluated to have a moderate index matching property and coating property, the haze was inferior and the optical properties were low, and the annealing process was interrupted by the silica particles during the formation of the conductive layer. It has been estimated that the electrical conductivity is increased and the electrical conductivity is markedly low, and therefore, the role as a transparent conductive film cannot be properly performed.

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Abstract

Provided are: a low refractive composition containing an organopolysiloxane and inorganic particles having an average diameter of approximately 30-70 nm; a preparation method therefor; and a transparent conductive film.

Description

저굴절 조성물, 이의 제조방법, 및 투명 도전성 필름Low refractive composition, its preparation method, and transparent conductive film

저굴절 조성물, 이의 제조방법, 및 투명 도전성 필름에 관한 것이다.A low refractive index composition, a manufacturing method thereof, and a transparent conductive film.

터치 스크린 기능을 갖는 스마트폰, 태블릿 PC, 현금인출기, 노트북, TV 등의 전자 기기는 터치에 의해 반응하여 정보를 입력하거나 조작할 수 있는 터치 스크린 패널과 LCD 또는 OLED 등과 같은 디스플레이 장치를 포함한다.BACKGROUND Electronic devices such as smart phones, tablet PCs, ATMs, notebook computers, TVs, and the like having a touch screen function include a touch screen panel capable of inputting or manipulating information in response to a touch and a display device such as an LCD or an OLED.

일반적으로, 터치 스크린 패널은 투명 도전성 필름을 포함하여 투명성 및 전기 전도성을 동시에 구현하여 터치에 의해 반응하는 성능을 발휘할 수 있다. 또한, 예를 들어, 터치 스크린 패털은 위치 검출의 방법에 따라 광학 방식, 초음파 방식, 정전 용량 방식, 저항막 방식의 터치 패널 등이 있고, 순차적으로 투명 도전성 필름, 예를 들어, OCA(optically clear adhesive), OCR(Optically Clear Resin) 등과 같은 광학용 점착 필름, 유리 기판이나 투명 플라스틱 기판 등을 포함하는 다층 구조의 적층체로서 형성될 수 있다. In general, the touch screen panel may include a transparent conductive film to simultaneously implement transparency and electrical conductivity to exert a performance of responding by touch. For example, the touch screen panel includes an optical method, an ultrasonic method, a capacitive method, a resistive touch panel, and the like according to the method of position detection, and sequentially a transparent conductive film, for example, OCA (optically clear). It can be formed as a laminate of a multilayer structure including an adhesive (optically clear resin), an optical adhesive film such as OCR (Optically Clear Resin), a glass substrate or a transparent plastic substrate.

이러한 투명 도전성 필름은 기재층과 도전성 물질, 예를 들어 산화인듐주석(ITO)로 형성된 전극을 포함하는 도전층 등을 포함하고 있고, 통상 롤 형태로 권취되거나 또는 복수 장의 필름이 적층되어 유통되고 있으나, 그로 인해 투명 도전성 필름이 서로 달라붙게 되고, 이를 터치 스크린 패널에 적용하기 위해 펼치는 과정에서 투명 도전성 필름의 성능이 저하되는 문제가 있다.Such a transparent conductive film includes a base layer and a conductive layer including an electrode formed of a conductive material, for example, indium tin oxide (ITO), and is usually wound in a roll form or laminated with a plurality of films. Therefore, the transparent conductive films are stuck to each other, and there is a problem in that the performance of the transparent conductive film is degraded in the process of spreading the same to apply the same to the touch screen panel.

게다가, 도전층의 전극을 형성하는 소재로서 ITO뿐만 아니라, 은나노 와이어, 등도 사용할 수 있는데 이러한 소재를 사용하는 경우에는 전극 패턴의 폭이나 너비 In addition, silver nanowires or the like can be used as a material for forming the electrode of the conductive layer. In the case of using such a material, the width or width of the electrode pattern can be used.

가 상대적으로 증가하여 인덱스 매칭성을 만족시키지 못함으로써 제품을 사용하는 소비자에게 전극 패턴이 육안으로 보일 수 있어 시인성이 저하될 수 있다.Relative to increase so as not to satisfy the index matching, the electrode pattern may be visible to the consumer using the product and the visibility may be degraded.

본 발명의 일 구현예에서, 우수한 블로킹 방지 성능 및 우수한 광학 물성을 구현하면서 전기 전도성을 저하시키지 않는 저굴절 조성물을 제공한다.In one embodiment of the present invention, it provides a low refractive index composition that does not reduce the electrical conductivity while implementing excellent blocking prevention performance and excellent optical properties.

본 발명의 다른 구현예에서, 상기 저굴절 조성물의 제조방법을 제공한다.In another embodiment of the present invention, a method of preparing the low refractive index composition is provided.

본 발명의 또 다른 구현예에서, 상기 저굴절 조성물에 의해 형성된 저굴절층을 포함하여, 우수한 블로킹 방지 성능, 우수한 광학 물성 및 우수한 전기 전도성을 구현하는 투명 도전성 필름을 제공한다.In another embodiment of the present invention, including a low refractive index layer formed by the low refractive index composition, to provide a transparent conductive film that implements excellent anti-blocking performance, excellent optical properties and excellent electrical conductivity.

본 발명의 일 구현예에서, 오가노폴리실록산(organopolysiloxane) 및 평균 직경이 약 30nm 내지 약 70nm인 무기 입자를 포함하는 저굴절 조성물을 제공한다.In one embodiment of the invention, there is provided a low refractive index composition comprising an organopolysiloxane (organopolysiloxane) and inorganic particles having an average diameter of about 30nm to about 70nm.

상기 오가노폴리실록산 약 100 중량부에 대하여 상기 무기 입자를 약 0.5 중량부 내지 약 20 중량부로 포함할 수 있다.The inorganic particles may be included in an amount of about 0.5 parts by weight to about 20 parts by weight based on about 100 parts by weight of the organopolysiloxane.

상기 오가노폴리실록산은 탄소수 1개 내지 18개의 알킬기, 탄소수 1개 내지 18개의 알콕시기, 탄소수 2개 내지 6개의 에스테르기, 탄소수 2개 내지 12개의 에폭시기, 탄소수 2개 내지 12개의 알케닐기, 탄소수 6개 내지 12개의 방향족기, 탄소수 3개 내지 18개의 아크릴기, 글리시딜기, 아민기, 티올기, 할로겐기 및 이들의 조합으로 이루어진 군에서 선택된 적어도 하나의 관능기를 포함할 수 있다.The organopolysiloxane is an alkyl group of 1 to 18 carbon atoms, an alkoxy group of 1 to 18 carbon atoms, an ester group of 2 to 6 carbon atoms, an epoxy group of 2 to 12 carbon atoms, an alkenyl group of 2 to 12 carbon atoms, 6 carbon atoms It may include at least one functional group selected from the group consisting of 12 to 12 aromatic groups, 3 to 18 carbon atoms, acrylic group, glycidyl group, amine group, thiol group, halogen group and combinations thereof.

상기 오가노폴리실록산은 선형 구조, 망상형 구조 또는 이들 모두를 포함할 수 있다.The organopolysiloxane may comprise a linear structure, a network structure, or both.

상기 오가노폴리실록산은 하기 화학식 1의 실란 화합물 및 하기 화학식 2의 실란 화합물을 포함하는 조성물이 졸-겔 반응을 진행하여 형성될 수 있다:The organopolysiloxane may be formed by a sol-gel reaction of a composition comprising a silane compound of Formula 1 and a silane compound of Formula 2 below:

[화학식1] [Formula 1]

R1 xSi(OR2)4-x R 1 x Si (OR 2 ) 4-x

[화학식 2][Formula 2]

Si(OR3)4 Si (OR 3 ) 4

상기 화학식 1에서, 상기 R1은 탄소수 1개 내지 18개의 알킬기, 탄소수 2개 내지 6개의 에스테르기, 탄소수 2개 내지 12개의 에폭시기, 탄소수 2개 내지 12개의 알케닐기, 탄소수 6개 내지 12개의 방향족기, 탄소수 3개 내지 18개의 아크릴기, 글리시딜기, 아민기, 티올기 또는 할로겐기이고, 상기 R2 및 상기 R3는 각각 독립적으로, H, 또는 탄소수 1개 내지 18개의 알킬기이며, 상기 x는 1, 2, 또는 3이다. In Chemical Formula 1, R 1 is an alkyl group having 1 to 18 carbon atoms, an ester group having 2 to 6 carbon atoms, an epoxy group having 2 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, and having 6 to 12 carbon atoms Group, an acryl group having 3 to 18 carbon atoms, a glycidyl group, an amine group, a thiol group or a halogen group, and each of R 2 and R 3 is independently H or an alkyl group having 1 to 18 carbon atoms, and x is 1, 2, or 3.

상기 졸-겔 반응을 진행하기 이전 상기 조성물에 상기 무기 입자가 더 혼합되어 포함될 수 있다.Before the sol-gel reaction, the inorganic particles may be further mixed and included in the composition.

상기 오가노폴리실록산은 중량평균 분자량이 약 3,000g/mol 내지 약 55,000g/mol일 수 있다.The organopolysiloxane may have a weight average molecular weight of about 3,000 g / mol to about 55,000 g / mol.

상기 무기 입자는 실리카 입자, 알루미나 입자, 산화지르코늄 입자, 산화티타늄 입자, 산화안티몬 입자 및 이들의 조합으로 이루어진 군으로부터 선택된 적어도 하나의 입자를 포함할 수 있다.The inorganic particles may include at least one particle selected from the group consisting of silica particles, alumina particles, zirconium oxide particles, titanium oxide particles, antimony oxide particles, and combinations thereof.

상기 저굴절 조성물이 치환 또는 비치환된 단분자 알콕시실란 화합물을 포함하지 않거나, 또는 더 포함할 수 있다.The low refractive index composition may not include or further include a substituted or unsubstituted monomolecular alkoxysilane compound.

본 발명의 다른 구현예에서, 상기 저굴절 조성물에 의해 형성된 저굴절층을 포함하는 투명 도전성 필름을 제공한다.In another embodiment of the present invention, it provides a transparent conductive film comprising a low refractive index layer formed by the low refractive index composition.

상기 저굴절층은 상부면에 미세 요철이 형성되고, 상기 미세 요철이 상기 무기 입자에 의해 형성될 수 있다.The low refractive layer may be formed with fine irregularities on the upper surface, the fine irregularities may be formed by the inorganic particles.

상기 저굴절층의 두께는 약 10nm 내지 약 50nm일 수 있다.The low refractive layer may have a thickness of about 10 nm to about 50 nm.

상기 저굴절층은 굴절율이 약 1.40 내지 약 1.50일 수 있다.The low refractive index layer may have a refractive index of about 1.40 to about 1.50.

상기 저굴절층의 하부에 순차적으로 고굴절층 및 기재층을 더 포함하고, 상기 저굴절층의 상부에 도전층을 더 포함할 수 있다.The low refractive index layer may further include a high refractive index layer and a base layer sequentially, and may further include a conductive layer on top of the low refractive layer.

상기 기재층의 일면 또는 양면에 접하는 하드코팅층을 더 포함할 수 있다.It may further include a hard coating layer in contact with one side or both sides of the base layer.

상기 투명 도전성 필름의 광투과율이 약 85% 이상이고, 헤이즈가 약 0.1% 내지 약 0.8%일 수 있다.The transparent conductive film may have a light transmittance of about 85% or more and a haze of about 0.1% to about 0.8%.

본 발명의 또 다른 구현예에서, 하기 화학식 1의 실란 화합물, 하기 화학식 2의 실란 화합물 및, 평균 직경이 약 30nm 내지 약 70nm인 무기 입자를 혼합하여 이들을 포함하는 원료 조성물을 준비하는 단계; 및 상기 원료 조성물에 대하여 졸-겔 반응을 진행시켜 저굴절 조성물을 제조하는 단계; 를 포함하는 저굴절 조성물의 제조방법을 제공한다: In another embodiment of the present invention, preparing a raw material composition comprising a silane compound of Formula 1, a silane compound of Formula 2 and inorganic particles having an average diameter of about 30nm to about 70nm; And preparing a low refractive composition by performing a sol-gel reaction on the raw material composition. It provides a method for producing a low refractive index composition comprising:

[화학식1][Formula 1]

R1 xSi(OR2)4-x R 1 x Si (OR 2 ) 4-x

[화학식 2][Formula 2]

Si(OR3)4 Si (OR 3 ) 4

상기 화학식 1에서, 상기 R1은 탄소수 1개 내지 18개의 알킬기, 탄소수 2개 내지 6개의 에스테르기, 탄소수 2개 내지 12개의 에폭시기, 탄소수 2개 내지 12개의 알케닐기, 탄소수 6개 내지 12개의 방향족기, 탄소수 3개 내지 18개의 아크릴기, 글리시딜기, 아민기, 티올기 또는 할로겐기이고, 상기 R2 및 상기 R3는 각각 독립적으로, H, 또는 탄소수 1개 내지 18개의 알킬기이며, 상기 x는 1, 2, 또는 3이다.In Chemical Formula 1, R 1 is an alkyl group having 1 to 18 carbon atoms, an ester group having 2 to 6 carbon atoms, an epoxy group having 2 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, and having 6 to 12 carbon atoms Group, an acryl group having 3 to 18 carbon atoms, a glycidyl group, an amine group, a thiol group or a halogen group, and each of R 2 and R 3 is independently H or an alkyl group having 1 to 18 carbon atoms, and x is 1, 2, or 3.

상기 화학식 1의 실란 화합물 및 상기 화학식 2의 실란 화합물의 총합 약 100 중량부에 대하여 상기 무기 입자를 약 0.5 중량부 내지 약 20 중량부로 혼합하여 상기 원료 조성물을 준비할 수 있다.The raw material composition may be prepared by mixing the inorganic particles in an amount of about 0.5 parts by weight to about 20 parts by weight based on a total of about 100 parts by weight of the silane compound of Formula 1 and the silane compound of Formula 2.

상기 졸-겔 반응을 진행시키는 동안 상기 실란 화합물들 간에 서로 화학 반응을 진행하여 오가노폴리실록산이 형성될 수 있다.During the sol-gel reaction, an organopolysiloxane may be formed by chemical reaction between the silane compounds.

상기 저굴절 조성물은 우수한 블로킹 방지 성능 및 우수한 광학 물성을 구현하면서 전기 전도성을 저하시키지 않을 수 있다.The low refractive index composition may not reduce the electrical conductivity while implementing excellent blocking prevention performance and excellent optical properties.

도 1은 본 발명의 다른 구현예에 따른 투명 도전성 필름의 두 가지 예시, (a) 및 (b)의 각 단면을 나타낸 개략적인 단면도이다. 1 is a schematic cross-sectional view showing two cross-sectional views of two examples, (a) and (b) of a transparent conductive film according to another embodiment of the present invention.

이하, 첨부한 도면을 참고로 하여 본 발명의 구현예에 대하여 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 상세히 설명한다. 본 발명은 여러 가지 상이한 형태로 구현될 수 있으며 여기에서 설명하는 구현예에 한정되지 않는다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

본 발명을 명확하게 설명하기 위해서 설명과 관계없는 부분은 생략하였으며, 명세서 전체를 통하여 동일 또는 유사한 구성요소에 대해서는 동일한 참조 부호를 붙이도록 한다.In order to clearly describe the present invention, parts irrelevant to the description are omitted, and like reference numerals designate like elements throughout the specification.

도면에서 여러 층 및 영역을 명확하게 표현하기 위하여 두께를 확대하여 나타내었다. 그리고 도면에서, 설명의 편의를 위해, 일부 층 및 영역의 두께를 과장되게 나타내었다.In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.

이하에서 기재의 “상부 (또는 하부)” 또는 기재의 “상 (또는 하)”에 임의의 구성이 형성된다는 것은, 임의의 구성이 상기 기재의 상면 (또는 하면)에 접하여 형성되는 것을 의미할 뿐만 아니라, 상기 기재와 기재 상에 (또는 하에) 형성된 임의의 구성 사이에 다른 구성을 포함하지 않는 것으로 한정하는 것은 아니다.Hereinafter, any configuration is formed on the "top (or bottom)" of the substrate or "top (or bottom)" of the substrate means that any configuration is formed in contact with the top (or bottom) of the substrate. However, it is not limited to not including other configurations between the substrate and any configuration formed on (or under) the substrate.

저굴절 조성물Low refractive composition

본 발명의 일 구현예에서, 오가노폴리실록산(organopolysiloxane) 및 평균 직경이 예를 들어, 약 30nm 내지 약 70nm인 무기 입자를 포함하는 저굴절 조성물을 제공한다. 구체적으로, 상기 무기 입자의 평균 직경은 약 35nm 내지 약 60nm일 수 있다.In one embodiment of the invention, there is provided a low refractive index composition comprising an organopolysiloxane and inorganic particles having an average diameter of, for example, about 30 nm to about 70 nm. Specifically, the average diameter of the inorganic particles may be about 35nm to about 60nm.

일반적으로, 투명 도전성 필름은 롤 형태로 권취되거나, 또는 복수 장의 필름이 적층되어 유통되고 있는데 그로 인해 투명 도전성 필름이 서로 달라붙게 되고 이를 터치 스크린 패널 등에 적용하기 위해 펼치거나 서로 떼어내는 과정에서 투명 도전성 필름의 성능이 현저히 저하될 수 있다. 그에 따라, 유통 과정에서 투명 도전성 필름 간의 부착을 방지하기 위해 하드코팅층에 무기 입자를 포함시켜 돌출부를 형성함으로써 이들이 서로 접하는 면적을 감소시켜 부착 정도를 약하게 할 수 있고, 그로 인해 투명 도전성 필름의 성능이 저하되지 않으면서 펼치거나 서로 떼어낼 수 있는 블로킹 방지 성능을 발휘하고 있다. In general, the transparent conductive film is wound in a roll form, or a plurality of films are stacked and distributed. As a result, the transparent conductive films adhere to each other and are transparent or conductive in the process of being unfolded or separated from each other for application to a touch screen panel. The performance of the film can be significantly reduced. Accordingly, in order to prevent adhesion between the transparent conductive films in the distribution process, by including the inorganic particles in the hard coating layer to form protrusions, it is possible to reduce the area of contact with each other to weaken the adhesion degree, thereby improving the performance of the transparent conductive film It exhibits anti-blocking performance that can be unfolded or peeled off without being degraded.

다만, 바인더 수지로서 아크릴 수지 등을 포함하는 하드코팅용 조성물에 무기 입자를 포함하는 경우에는 아크릴 수지 및 무기 입자 간의 상용성이 낮고, 바인더 수지의 비중, 표면에너지 등의 물성 및 하드코팅층의 두께를 고려할 때 하드코팅층에 돌출부를 형성하기 위해서는 평균 직경이 큰 무기 입자를 포함해야 하므로 가공시 표면 외관의 불량률이 증가하고 헤이즈가 증가하여 광학 물성 및 도전층의 전기 전도성을 더욱 저하시킬 수 있는 문제가 있다. However, when inorganic particles are included in the hard coating composition including acrylic resin as the binder resin, the compatibility between the acrylic resin and the inorganic particles is low, and the physical properties such as specific gravity of the binder resin, surface energy, and the thickness of the hard coating layer are used. In consideration of this, in order to form protrusions on the hard coating layer, inorganic particles having a large average diameter must be included, so that the defect rate of the surface appearance during processing increases and the haze increases, thereby further deteriorating the optical properties and the electrical conductivity of the conductive layer. .

또한, 도전층의 전극을 형성하는 소재로서 ITO뿐만 아니라, 은나노 와이어, 등도 사용할 수 있는데 이러한 소재를 사용하는 경우에는 전극 패턴의 폭이나 너비가 상대적으로 증가하여 인덱스 매칭성을 만족하지 못함으로써 제품을 사용하는 소비자에게 전극 패턴이 육안으로 보일 수 있어 인덱스 매칭성 또는 시인성이 저하될 수 있다. In addition, not only ITO, but also silver nanowires and the like may be used as a material for forming the electrode of the conductive layer. In the case of using such a material, the width or width of the electrode pattern is relatively increased so that the product does not satisfy the index matching property. The electrode pattern may be visually seen by the consumer to use, and thus index matching or visibility may be degraded.

이에, 일 구현예에서는 오가노폴리실록산을 포함하는 저굴절 조성물에 무기 입자를 포함하여 상기 저굴절 조성물에 포함된 성분들 간의 상용성을 향상시키면서도 오가노폴리실록산의 비중, 표면에너지 등의 물성 및 저굴절층의 두께를 고려할 때 블로킹 방지 성능, 즉 안티블로킹 성능을 구현하는데 필요한 무기 입자의 평균 직경을 적절히 작은 수준으로 감소시킬 수 있다.Thus, in one embodiment, including inorganic particles in the low refractive index composition containing the organopolysiloxane, while improving compatibility between the components included in the low refractive index composition, the specific properties of the organopolysiloxane, such as surface energy and low refractive index Given the thickness of the layer, it is possible to reduce the average diameter of the inorganic particles required to achieve the antiblocking performance, that is, the antiblocking performance, to an appropriately small level.

그에 따라, 상기 저굴절 조성물에 의해 형성된 저굴절층을 포함하는 투명 도전성 필름은 우수한 블로킹 방지 성능을 구현하면서도 상기 저굴절 조성물의 코팅 과정에서, 표면 외관의 불량률이 감소하고, 굴절률 및 헤이즈가 적절한 수준으로 형성되어 우수한 인덱스 매칭성, 우수한 시인성 및 우수한 광학 물성을 구현할 수 있는 이점이 있다. 또한, 이와 같이 상기 무기 입자의 평균 입경을 적절한 수준으로 감소시킴으로써 상기 저굴절층의 상부에 도전층 형성시 수반되는 어닐링 공정(annealing process)이 더욱 용이하게 진행될 수 있어 도전층의 전기 저항을 낮출 수 있으므로 우수한 전기 전도성을 구현할 수 있다.Accordingly, the transparent conductive film including the low refractive index layer formed by the low refractive index composition exhibits excellent anti-blocking performance while in the coating process of the low refractive index composition, the defect rate of the surface appearance is reduced, and the refractive index and the haze are at an appropriate level. Is formed to have an advantage that can implement excellent index matching, excellent visibility and excellent optical properties. In addition, by reducing the average particle diameter of the inorganic particles to an appropriate level as described above, the annealing process involved in forming the conductive layer on the upper portion of the low refractive index layer may be more easily performed, thereby lowering the electrical resistance of the conductive layer. Therefore, excellent electrical conductivity can be achieved.

상기 저굴절 조성물은 상기 오가노폴리실록산 약 100 중량부에 대하여 상기 무기 입자를 예를 들어, 약 0.5 중량부 내지 약 20 중량부로 포함할 수 있고, 구체적으로는 약 7 중량부 내지 약 13 중량부로 포함할 수 있다. 상기 범위로 포함함으로써 우수한 블로킹 방지 성능 및 낮은 굴절률을 구현하면서도 헤이즈를 적절한 수준으로 유지하여 우수한 광학 물성 및 우수한 시인성을 동시에 구현할 수 있다. The low refractive index composition may include, for example, about 0.5 parts by weight to about 20 parts by weight, and specifically about 7 parts by weight to about 13 parts by weight, based on about 100 parts by weight of the organopolysiloxane. can do. By including in the above range it is possible to implement the excellent anti-blocking performance and low refractive index while maintaining the haze at an appropriate level to implement excellent optical properties and excellent visibility at the same time.

구체적으로, 상기 무기 입자를 약 0.5 중량부 미만으로 포함하는 경우 안티블록킹 성능을 충분히 구현하지 못할 수 있고, 약 20 중량부 초과로 포함하는 경우 도전층 성막 후에 도전층 결정성에 방해를 주어 전기적 특성을 저하시킬 수 있는 문제가 있다.Specifically, when the inorganic particles are included in less than about 0.5 parts by weight, the antiblocking performance may not be sufficiently realized. When the inorganic particles are included in more than about 20 parts by weight, the electrical properties may be impaired after the conductive layer is formed. There is a problem that can be reduced.

상기 무기 입자는 예를 들어, 실리카 입자, 알루미나 입자, 산화지르코늄 입자, 산화티타늄 입자, 산화안티몬 입자 및 이들의 조합으로 이루어진 군으로부터 선택된 적어도 하나의 입자를 포함할 수 있다. The inorganic particles may include, for example, at least one particle selected from the group consisting of silica particles, alumina particles, zirconium oxide particles, titanium oxide particles, antimony oxide particles, and combinations thereof.

종래에는 하드코팅용 조성물에 분말 형태의 무기 입자를 혼합하였고, 그에 따라 뭉치거나 코팅 공정 도중 침전하여 블로킹 방지 성능 및 저굴절률을 균일하게 구현할 수 없었다.Conventionally, inorganic particles in the form of powder were mixed with the composition for hard coating, thereby agglomeration or precipitating during the coating process, thereby preventing uniformity in blocking performance and low refractive index.

일 구현예에서, 상기 저굴절 조성물은 졸(sol) 형태의 무기 입자, 즉 무기 입자 함유 졸을 포함하여 분산성을 향상시킬 수 있고, 그에 따라 블로킹 방지 성능 및 저굴절률을 모두 균일한 수준으로 구현할 수 있다. 즉, 상기 무기 입자는 분산매에 분산되어 분산 졸의 형태로 포함될 수 있다.In one embodiment, the low refractive index composition may include inorganic particles in the form of a sol, that is, inorganic particles containing sol to improve the dispersibility, thereby achieving both the anti-blocking performance and low refractive index at a uniform level. Can be. That is, the inorganic particles may be dispersed in a dispersion medium and included in the form of a dispersion sol.

예를 들어, 상기 무기 입자는 예를 들어, 물 또는 유기 용매 등의 분산매에 분산된 형태로서 상기 무기 입자의 고형분 함량이 약 5 중량% 내지 약 40 중량%인 콜로이드상으로 포함될 수 있으나, 이에 한정되는 것은 아니다. 상기 분산매로 사용 가능한 유기용매로는 메탄올(methanol), 이소프로필 알코올(isopropyl alcohol, IPA), 에틸렌 글리콜(ethylene glycol), 부탄올(butanol) 등의 알콜류; 메틸 에틸 케톤(methyl ethyl ketone), 메틸 이소 부틸 케톤(methyl iso butyl ketone, MIBK) 등의 케톤류; 톨루엔(toluene), 크실렌(xylene) 등의 방향족 탄소수소류; 디메틸 포름 아미드(dimethyl formamide), 디메틸 아세트아미드(dimethyl acetamide), N-메틸 피롤리돈(N-methyl pyrrolidone) 등의 아미드류; 초산에틸, 초산부틸, γ-부티로락톤 등의 에스터(ester)류; 테트라하이드로퓨란(tetrahydrofuran), 1,4-디옥산 등의 에테르(ether)류; 또는 이들의 혼합물을 사용할 수 있다. For example, the inorganic particles may be, for example, dispersed in a dispersion medium such as water or an organic solvent, and may be included in a colloidal phase in which solid content of the inorganic particles is about 5 wt% to about 40 wt%, but is not limited thereto. It doesn't happen. Organic solvents usable as the dispersion medium include alcohols such as methanol, isopropyl alcohol, IPA, ethylene glycol, butanol, etc .; Ketones such as methyl ethyl ketone and methyl iso butyl ketone (MIBK); Aromatic carbon hydrogens such as toluene and xylene; Amides such as dimethyl formamide, dimethyl acetamide and N-methyl pyrrolidone; Esters such as ethyl acetate, butyl acetate and γ-butyrolactone; Ethers such as tetrahydrofuran and 1,4-dioxane; Or mixtures thereof.

상기 무기 입자는 평균 직경이 예를 들어, 약 30nm 내지 약 70nm일 수 있고, 구체적으로는 약 35nm 내지 약 60nm일 수 있다.The inorganic particles may have an average diameter of, for example, about 30 nm to about 70 nm, and specifically about 35 nm to about 60 nm.

상기 평균 직경은 각각의 입자에 대해 측정한 입자 직경의 평균값을 의미한다. 상기 범위 내의 평균 직경을 가짐으로써 저굴절층에 돌출부가 충분히 형성되어 우수한 블로킹 방지 성능을 구현할 수 있고, 미세 요철 형상이 발생하더라도 도전층 에칭시 시인성을 저하시키지 않아 우수한 시인성을 구현할 수 있으며, 저굴절층에 전기 저항성을 발생시키지 않아 우수한 전기 전도성을 구현할 수 있으므로 도전층 하부에서 언더코팅층의 역할을 충분히 수행할 수 있다. The average diameter means the average value of the particle diameters measured for each particle. By having an average diameter within the above range, the protrusions are sufficiently formed in the low refractive layer, so that excellent blocking prevention performance can be realized, and even when a fine uneven shape is generated, excellent visibility can be realized without lowering the visibility during etching of the conductive layer. Since the electrical resistance is not generated in the layer and excellent electrical conductivity can be realized, the role of the undercoat layer under the conductive layer can be sufficiently performed.

구체적으로, 상기 평균 직경이 약 30nm 미만인 경우 입자 크기가 너무 작아 블록킹 방지 성능을 발휘할 수 없고, 약 70nm 초과인 경우 상기 저굴절층의 상부에 도전층을 형성하는 과정에서 어닐링 공정을 필수적으로 적용하게 되는데 상기 무기 입자의 평균 직경이 너무 커서 어닐링 공정을 방해하게 되고, 그에 따라 도전층의 전기 저항성이 증가하여 전기 전도성이 더욱 낮아짐으로써 터치스크린 패널 등의 오작동을 발생시킬 수 있고, 헤이즈가 증가하여 광학물성이 저하되는 문제가 있다. 게다가, 저굴절층의 양면에 적층된 고굴절층 및 도전층에 대한 접착력도 더욱 저하될 수 있다.Specifically, when the average diameter is less than about 30 nm, the particle size is too small to exhibit blocking prevention performance, and when the average diameter is greater than about 70 nm, the annealing process is essentially applied in the process of forming the conductive layer on the low refractive index layer. The average diameter of the inorganic particles is too large to interfere with the annealing process, thereby increasing the electrical resistance of the conductive layer, thereby lowering the electrical conductivity, thereby causing malfunction of the touch screen panel, and increasing the haze. There is a problem that physical properties are lowered. In addition, the adhesion to the high refractive index layer and the conductive layer laminated on both surfaces of the low refractive index layer can be further lowered.

일 구현예에서, 상기 저굴절 조성물은 상기 오가노폴리실록산을 예를 들어, 약 10 중량% 내지 약 80 중량%로 포함할 수 있다. 상기 범위 내의 함량으로 포함함으로써 굴절률을 적절히 낮은 수준으로 구현할 수 있으면서 저굴절층을 용이하게 형성할 수 있다.In one embodiment, the low refractive index composition may include, for example, about 10% to about 80% by weight of the organopolysiloxane. By including a content within the above range can be formed at a low level of the refractive index can be easily formed a low refractive index layer.

상기 오가노폴리실록산은 탄소수 1개 내지 18개의 알킬기, 탄소수 1개 내지 18개의 알콕시기, 탄소수 2개 내지 6개의 에스테르기, 탄소수 2개 내지 12개의 에폭시기, 탄소수 2개 내지 12개의 알케닐기, 탄소수 6개 내지 12개의 방향족기, 탄소수 3개 내지 18개의 아크릴기, 글리시딜기, 아민기, 티올기, 할로겐기 및 이들의 조합으로 이루어진 군에서 선택된 적어도 하나의 관능기를 포함할 수 있다. 상기 관능기를 포함함으로써 다양한 종류의 유기 용매 내에서 화학 반응이 용이하게 진행될 수 있어 공정성 및 상용성이 우수하고, 다양한 종류의 기재에 대해 코팅이 용이하면서 우수한 부착성을 구현할 수 있다.The organopolysiloxane is an alkyl group of 1 to 18 carbon atoms, an alkoxy group of 1 to 18 carbon atoms, an ester group of 2 to 6 carbon atoms, an epoxy group of 2 to 12 carbon atoms, an alkenyl group of 2 to 12 carbon atoms, 6 carbon atoms It may include at least one functional group selected from the group consisting of 12 to 12 aromatic groups, 3 to 18 carbon atoms, acrylic group, glycidyl group, amine group, thiol group, halogen group and combinations thereof. By including the functional group, the chemical reaction can be easily carried out in various kinds of organic solvents, so that the processability and compatibility are excellent, and coating can be easily performed on various kinds of substrates, and excellent adhesion can be realized.

상기 방향족기는 환형인 치환기의 모든 원소가 p-오비탈을 가지고 있고, 이들 p-오비탈이 공액(conjugation)을 형성하고 있는 치환기를 의미한다. 구체적인 예로서, 페닐기, 아릴기 등이 있다. 또한, 상기 할로겐기는 예로서, -F, -Cl, -Br, -I 등이 있다. The aromatic group means a substituent in which all elements of the cyclic substituent have p-orbitals, and these p-orbitals form conjugation. As a specific example, a phenyl group, an aryl group, etc. are mentioned. Further, examples of the halogen group include -F, -Cl, -Br, -I and the like.

또한, 상기 오가노폴리실록산은 선형 구조, 망상형 구조 또는 이들 모두를 포함할 수 있다. 즉, 상기 오가노폴리실록산은 실록산 결합, 즉 Si-O-Si 결합에 의해 사슬 구조로 결합하여 선형 구조로 형성될 수 있고, 입체적인 구조로 결합하여 망상형 구조로 형성될 수 있으며, 이들 모두를 포함하는 구조로 형성될 수도 있다. 또한 상기 망상형 구조는 부분적으로 상기 관능기에 의해 열린 구조를 포함할 수 있고, 구체적으로 상기 관능기에 의해 상기 망상 구조의 결합이 부분적으로 끊어져 열린 구조가 포함될 수 있다.In addition, the organopolysiloxane may include a linear structure, a network structure, or both. That is, the organopolysiloxane may be formed in a linear structure by combining in a chain structure by a siloxane bond, that is, Si-O-Si bond, may be formed in a network structure by combining in a three-dimensional structure, including all It may be formed in a structure to. In addition, the network structure may include a structure partially opened by the functional group, and specifically, the structure of the network structure is partially broken by the functional group may include an open structure.

상기 오가노폴리실록산이 선형 구조를 포함하는 경우 고형화 속도가 느려 우수한 공정 안정성을 구현할 수 있으면서 기재에 코팅을 하는 경우 평탄성이 보다 우수하여 도전층 형성시 예를 들어, 산화인듐주석(Indium Tin Oxide, ITO)의 결정화를 용이하게 하여 전기 전도성을 향상시킬 수 있다. 한편, 상기 오가노폴리실록산이 망상형 구조를 포함하는 경우에는 구조적 특성으로 인해 우수한 내화학성 및 우수한 내용제성을 구현할 수 있고, 그에 따라, 도전층 형성에 필요한 식각 공정 또는 수세 공정에서 사용되는 산성 또는 염기성 화학 물질에 의해 영향을 받지 않아 우수한 안정성을 구현할 수 있다. When the organopolysiloxane includes a linear structure, the solidification rate is low, so that excellent process stability can be realized, and when the coating is applied to the substrate, the flatness is more excellent. For example, indium tin oxide (ITO) when forming a conductive layer ) Crystallization can be facilitated to improve the electrical conductivity. On the other hand, when the organopolysiloxane includes a reticulated structure, due to its structural characteristics, excellent chemical resistance and excellent solvent resistance can be realized, and thus, acidic or basic used in an etching process or a washing process required for forming a conductive layer. Unaffected by chemicals, excellent stability can be achieved.

상기 오가노폴리실록산은 중량평균 분자량이 약 3,000g/mol 내지 약 55,000g/mol일 수 있다. 상기 범위 내의 중량평균 분자량을 가짐으로써 저굴절층 형성시 두께 조절 면에서 유리하며, 표면 거칠기를 균일하게 유지하는 효과를 용이하게 구현할 수 있다. The organopolysiloxane may have a weight average molecular weight of about 3,000 g / mol to about 55,000 g / mol. By having a weight average molecular weight within the above range is advantageous in terms of thickness control when forming the low refractive layer, it is possible to easily implement the effect of maintaining a uniform surface roughness.

상기 오가노폴리실록산은 하기 화학식 1의 실란 화합물 및 하기 화학식 2의 실란 화합물을 포함하는 원료 조성물이 졸-겔 반응을 진행하여 형성될 수 있다:The organopolysiloxane may be formed by a sol-gel reaction of a raw material composition comprising a silane compound of Formula 1 and a silane compound of Formula 2 below:

[화학식1][Formula 1]

R1 xSi(OR2)4-x R 1 x Si (OR 2 ) 4-x

[화학식 2][Formula 2]

Si(OR3)4 Si (OR 3 ) 4

상기 화학식 1에서, 상기 R1은 탄소수 1개 내지 18개의 알킬기, 탄소수 2개 내지 6개의 에스테르기, 탄소수 2개 내지 12개의 에폭시기, 탄소수 2개 내지 12개의 알케닐기, 탄소수 6개 내지 12개의 방향족기, 탄소수 3개 내지 18개의 아크릴기, 글리시딜기, 아민기, 티올기 또는 할로겐기이고, 상기 R2 및 상기 R3는 각각 독립적으로, H, 또는 탄소수 1개 내지 18개의 알킬기이며, 상기 x는 1, 2, 또는 3이다. In Chemical Formula 1, R 1 is an alkyl group having 1 to 18 carbon atoms, an ester group having 2 to 6 carbon atoms, an epoxy group having 2 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, and having 6 to 12 carbon atoms Group, an acryl group having 3 to 18 carbon atoms, a glycidyl group, an amine group, a thiol group or a halogen group, and each of R 2 and R 3 is independently H or an alkyl group having 1 to 18 carbon atoms, and x is 1, 2, or 3.

상기 방향족기는 환형인 치환기의 모든 원소가 p-오비탈을 가지고 있고, 이들 p-오비탈이 공액(conjugation)을 형성하고 있는 치환기를 의미한다. 구체적인 예로서, 페닐기, 아릴기 등이 있다. 또한, 상기 할로겐기는 예로서, -F, -Cl, -Br, -I 등이 있다.The aromatic group means a substituent in which all elements of the cyclic substituent have p-orbitals, and these p-orbitals form conjugation. As a specific example, a phenyl group, an aryl group, etc. are mentioned. Further, examples of the halogen group include -F, -Cl, -Br, -I and the like.

상기 졸-겔 반응은 예를 들어, 실란 화합물 등과 같은 전구체 분자들이 가수분해 반응, 축합반응, 탈수축합 반응, 가수분해-중축합 반응 등을 진행하여 선형 구조, 3차원 망상 구조 등으로 가교 결합을 형성하는 반응을 의미할 수 있다.In the sol-gel reaction, for example, precursor molecules such as a silane compound may undergo a hydrolysis reaction, a condensation reaction, a dehydration condensation reaction, a hydrolysis-polycondensation reaction, and the like to crosslink with a linear structure or a three-dimensional network structure. It may mean a reaction to form.

상기 원료 조성물이 졸-겔 반응을 진행하는 동안 상기 실란 화합물들 간에 서로 화학 반응을 진행하여 상기 오가노폴리실록산이 형성될 수 있다. 예를 들어, 상기 화학식 1의 실란 화합물들이 서로 반응하거나, 또는 상기 화학식 2의 실란 화합물들이 서로 반응하거나, 또는 상기 화학식 1의 실란 화합물과 상기 화학식 2의 실란 화합물이 서로 반응하나, 또는 이들의 조합 형태로 반응하여 상기 오가노폴리실록산이 형성될 수 있다. The organopolysiloxane may be formed by chemical reaction between the silane compounds during the sol-gel reaction of the raw material composition. For example, the silane compounds of Formula 1 may react with each other, or the silane compounds of Formula 2 may react with each other, or the silane compound of Formula 1 and the silane compound of Formula 2 may react with each other, or a combination thereof. The organopolysiloxane may be formed by reacting in a form.

상기 화학 반응은 예를 들어, 가수분해 반응, 축합 반응, 탈수축합 반응, 가수분해-중축합 반응 및 이들의 조합으로 이루어진 군에서 선택된 적어도 하나를 포함할 수 있고, 상기 화학 반응을 수행하여 상기 화학식 1의 실란 화합물, 상기 화학식 2의 실란 화합물 또는 이들 모두 사이에 실록산 결합, 즉 Si-O-Si 결합을 형성할 수 있고, 그에 따라 상기 오가노폴리실록산이 형성될 수 있다.The chemical reaction may include, for example, at least one selected from the group consisting of a hydrolysis reaction, a condensation reaction, a dehydration condensation reaction, a hydrolysis-polycondensation reaction, and a combination thereof. Silane bonds, that is, Si-O-Si bonds, may be formed between the silane compound of Formula 1, the silane compound of Formula 2, or both, and thus the organopolysiloxane may be formed.

예를 들어, 상기 화학식 1의 실란 화합물은 트리메톡시실란, 트리에톡시실란, 메틸트리메톡시실란, 메틸트리에톡시실란, 에틸트리메톡시실란, 에틸트리에톡시실란, n-프로필트리메톡시실란, n-프로필트리에톡시실란, 이소부틸트리에톡시실란, 시클로헥실트리메톡시실란, 페닐트리메톡시실란, 페닐트리에톡시실란, 비닐트리메톡시실란, 비닐트리에톡시실란, 알릴트리메톡시실란 알릴트리에톡시실란, 디메틸디메톡시실란, 디메틸디에톡시실란, 디페닐디메톡시실란, 디페닐디에톡시실란, 트리클로로메틸실란, 트리클로로클로로메틸 실란, 트리클로로 디클로로메틸 실란, 테트라클로로 실란, 디메톡시디메틸 실란, 트리아세톡시 비닐실란, 트리클로로옥타데실실란 트리클로로옥틸실란, 아크릴옥시프로필 트리메톡시 실란, 아크릴옥시프로필 트리에톡시 실란, 메타크릴옥시프로필 트리메톡시 실란, 메타크릴옥시프로필 트리에톡시 실란, 메타크릴옥시메틸 트리메톡시 실란, 메타크릴옥시메틸 트리에톡시 실란, 메타크릴옥시메틸 메틸 디메톡시 실란, 메타크릴옥시메틸 메틸 디에톡시 실란, 메타크릴옥시프로필 메틸 디메톡시 실란, 메타크릴옥시프로필 메틸 디에톡시 실란, 메타크릴옥시프로필 디메틸 메톡시 실란, 메타크릴옥시프로필 디메틸 에톡시 실란, 에폭시사이클로헥실에틸 트리메톡시 실란, 글리시딜프로필 트리메톡시 실란, 글리시딜프로필 메틸 디에톡시 실란, 글리시딜프로필 트리에톡시 실란, 스테아릴 트리메톡시 실란(stearyl trimethoxy silane), 아미노에틸 트리메톡시 실란, 아미노프로필 트리메톡시 실란, 아미노에틸 트리에톡시 실란, 아미노프로필 트리에톡시 실란, 트리에톡시실릴 디메틸 부틸리덴 프로필 아민, 페닐 아미노프로필 트리메톡시 실란 및 이들의 조합을 포함하는 군에서 선택된 적어도 하나를 포함할 수 있다. For example, the silane compound of Formula 1 may be trimethoxysilane, triethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, n-propyltrimeth Methoxysilane, n-propyltriethoxysilane, isobutyltriethoxysilane, cyclohexyltrimethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, allyl tri Methoxysilane allyltriethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, trichloromethylsilane, trichlorochloromethyl silane, trichloro dichloromethyl silane, tetrachloro Silane, dimethoxydimethyl silane, triacetoxy vinylsilane, trichlorooctadecylsilane trichlorooctylsilane, acryloxypropyl trimethoxy silane, acryloxypropyl trie Cysilane, methacryloxypropyl trimethoxy silane, methacryloxypropyl triethoxy silane, methacryloxymethyl trimethoxy silane, methacryloxymethyl triethoxy silane, methacryloxymethyl methyl dimethoxy silane, methacryl Oxymethyl methyl diethoxy silane, methacryloxypropyl methyl dimethoxy silane, methacryloxypropyl methyl diethoxy silane, methacryloxypropyl dimethyl methoxy silane, methacryloxypropyl dimethyl ethoxy silane, epoxycyclohexylethyl trimethoxy Silane, glycidylpropyl trimethoxy silane, glycidylpropyl methyl diethoxy silane, glycidylpropyl triethoxy silane, stearyl trimethoxy silane, aminoethyl trimethoxy silane, aminopropyl Trimethoxy silane, aminoethyl triethoxy silane, aminopropyl triethoxy silane, triethoxysilyl di At least one selected from the group comprising methyl butylidene propyl amine, phenyl aminopropyl trimethoxy silane, and combinations thereof.

상기 화학식 2의 실란 화합물은 테트라메톡시실란, 테트라에톡시실란, 테트라프로폭시실란, 테트라이소프로폭시실란, 테트라-n-부톡시실란, 테트라-sec-부톡시실란, 테트라-tert-부톡시실란, 및 이들의 조합을 포함하는 군에서 선택된 적어도 하나를 포함할 수 있다.The silane compound represented by Formula 2 is tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetraisopropoxysilane, tetra-n-butoxysilane, tetra-sec-butoxysilane, tetra-tert-butoxy And at least one selected from the group comprising silanes, and combinations thereof.

일 구현예에서, 상기 원료 조성물에 포함된 상기 화학식 1의 실란 화합물 대 상기 화학식 2의 실란 화합물의 중량비가 약 1:5 내지 약 1:99일 수 있다. 상기 범위 내의 중량비로 포함함으로써 상기 오가노폴리실록산에 포함된 유기성 부분 및 무기성 부분의 함량을 적절히 조절하여 우수한 인덱스 매칭성, 우수한 부착성 및 내산화성을 구현할 수 있다. 구체적으로, 약 1:5 미만인 경우 유기성 부분이 너무 많아 수세 공정시 사용 가능한 염기성 화학 물질에 의해 코팅이 손상되어 인덱스 매칭성이 달라지게 될 수 있고, 또한 약 1:99 초과인 경우 무기성 부분이 너무 많아 코팅의 유연성이 저하되어 부착성 및 산화성이 감소할 수 있다.In one embodiment, the weight ratio of the silane compound of Formula 1 to the silane compound of Formula 2 included in the raw material composition may be about 1: 5 to about 1:99. By including in a weight ratio within the above range it is possible to appropriately adjust the content of the organic portion and the inorganic portion contained in the organopolysiloxane to implement excellent index matching, excellent adhesion and oxidation resistance. Specifically, if the ratio is less than about 1: 5, the organic portion may be so large that the coating may be damaged by the basic chemicals available in the washing process, thereby changing the index matching. Too much of the coating's flexibility can be degraded, resulting in reduced adhesion and oxidation.

상기 원료 조성물은 상기 화학식 1의 실란 화합물을 예를 들어, 약 1 중량% 내지 약 19 중량%로 포함할 수 있으나, 이에 제한되는 것은 아니다. The raw material composition may include, for example, about 1 wt% to about 19 wt% of the silane compound of Formula 1, but is not limited thereto.

일 구현예에서, 상기 졸-겔 반응을 진행하기 이전 상기 조성물에 상기 무기 입자가 더 혼합되어 포함될 수 있다. 상기 오가노폴리실록산이 이미 형성되어 포함된 조성물에 상기 무기 입자를 추가로 혼합하는 경우 분산성이 저하될 수 있다. 이에, 상기 저굴절 조성물은 상기 화학식 1의 실란 화합물 및 상기 무기 입자가 모두 포함된 조성물을 졸-겔 반응을 진행시킴으로써 상기 화학식 1의 실란 화합물들 간의 반응 결과물인 상기 오가노폴리실록산 사이에 상기 무기 입자가 효과적으로 분산될 수 있고, 그에 따라 블로킹 방지 성능, 저굴절률 및 광학 물성을 더욱 균일한 수준으로 구현할 수 있다.In one embodiment, the inorganic particles may be further mixed in the composition before the sol-gel reaction. When the inorganic particles are further mixed with the composition in which the organopolysiloxane is already formed, the dispersibility may be reduced. Thus, the low refractive index composition is the inorganic particles between the organopolysiloxane which is a result of the reaction between the silane compounds of the formula (1) by a sol-gel reaction of the composition containing both the silane compound of the formula (1) and the inorganic particles Can be effectively dispersed, thereby achieving a more uniform level of anti-blocking performance, low refractive index and optical properties.

일반적으로, 저굴절층의 상부에 도전층을 형성하는 경우 진공 조건 하에서 예를 들어, 스퍼터링 방법에 의해 도전층 성막을 수행한다.In general, when the conductive layer is formed on the low refractive layer, the conductive layer film formation is performed by, for example, a sputtering method under vacuum conditions.

상기 진공 조건 하에서, 상기 저굴절 조성물에 상기 단분자 알콕시실란 화합물이 포함된 경우에는 이로부터 형성된 저굴절층으로부터 휘발성 유기화합물(volatile organic compounds, VOC)인 상기 단분자 알콕시실란 화합물이 배출되어 상기 도전층 형성시 어닐링 공정(annealing process)을 방해할 수 있고, 그에 따라 상기 도전층의 전기 저항성이 증가하여 전기 전도성이 저하되는 문제가 있다. 게다가, 고온고습 조건에서 상기 저굴절층 내에서 상기 단분자 알콕시실란 화합물의 전이(migration) 현상이 발생하여 헤이즈가 증가하면서 표면 특성이 저하될 수 있고, 그에 따라 광학 물성 및 전기 전도성도 감소될 수 있다. Under the vacuum conditions, when the low refractive index composition contains the monomolecular alkoxysilane compound, the monomolecular alkoxysilane compound, which is a volatile organic compound (VOC), is discharged from the low refractive index layer formed therefrom, thereby conducting the conductive. The layer formation may interfere with the annealing process, thereby increasing the electrical resistance of the conductive layer, thereby lowering the electrical conductivity. In addition, under high temperature and high humidity conditions, the migration phenomenon of the monomolecular alkoxysilane compound may occur in the low refractive layer, and the haze may be increased to decrease the surface properties, thereby reducing optical properties and electrical conductivity. have.

이에, 일 구현예에서 상기 저굴절 조성물이 치환 또는 비치환된 단분자 알콕시실란 화합물을 포함하지 않거나, 또는 더 포함할 수 있다. 구체적으로, 치환 또는 비치환된 단분자 알콕시실란 화합물을 포함하지 않을 수 있고, 그에 따라 도전층 형성시 휘발성 유기화합물인 단분자 알콕시실란 화합물이 배출되지 않아 어닐링 공정을 용이하게 수행할 수 있어 우수한 전기 전도성을 구현할 수 있고, 이와 동시에 고온고습 조건에서 전이 현상을 방지하여 헤이즈 및 표면 특성을 유지하여 우수한 신뢰성을 구현할 수 있다. Thus, in one embodiment, the low refractive index composition may not include or further include a substituted or unsubstituted monomolecular alkoxysilane compound. Specifically, it may not include a substituted or unsubstituted single-molecule alkoxysilane compound, and thus, when forming a conductive layer, the mono-molecular alkoxysilane compound, which is a volatile organic compound, is not discharged, and thus an annealing process may be easily performed, thereby providing excellent electrical The conductivity can be implemented, and at the same time, it can prevent the transition phenomenon at high temperature and high humidity conditions, thereby maintaining the haze and surface properties to implement excellent reliability.

본 명세서에서 "치환"이란 별도의 정의가 없는 한, 할로겐 원자(F, Cl, Br, 또는 I), 히드록시기, 니트로기, 시아노기, 아미노기, 카르복실기, 탄소수 1개 내지 30개의 알킬기; 탄소수 3개 내지 30개의 시클로알킬기; 탄소수 6개 내지 탄소수 30개의 아릴기; 또는 탄소수 1개 내지 30개의 알콕시기;로 치환된 것을 의미한다. 상기 알킬기는 직쇄형 또는 분지형일 수 있다.As used herein, unless otherwise defined, a "substituted" halogen atom (F, Cl, Br, or I), hydroxy group, nitro group, cyano group, amino group, carboxyl group, alkyl group having 1 to 30 carbon atoms; Cycloalkyl groups having 3 to 30 carbon atoms; Aryl groups having 6 to 30 carbon atoms; Or an alkoxy group having 1 to 30 carbon atoms. The alkyl group may be straight or branched.

상기 단분자 알콕시실란 화합물은 이 기술분야에서 공지된 종류를 모두 포함하는 의미이고, 예를 들어, 상기 화학식 1의 실란 화합물의 종류 중에서 선택된 적어도 하나를 포함할 수 있으나, 이에 제한되지 않는다.The monomolecular alkoxysilane compound is meant to include all kinds known in the art, for example, may include at least one selected from the kind of silane compound of Formula 1, but is not limited thereto.

상기 저굴절 조성물이 산촉매, 물, 유기 용매, 및 이들의 조합으로 이루어진 군에서 선택된 적어도 하나를 더 포함할 수 있다. The low refractive index composition may further include at least one selected from the group consisting of an acid catalyst, water, an organic solvent, and a combination thereof.

상기 산촉매는 예를 들어, 무기산 또는 유기산을 사용할 수 있고, 구체적으로, 질산, 염산, 황산 또는 초산 등이 사용될 수 있다.As the acid catalyst, for example, an inorganic acid or an organic acid may be used, and specifically, nitric acid, hydrochloric acid, sulfuric acid, acetic acid, or the like may be used.

상기 유기 용매는 예를 들어, 메탄올(methanol), 이소프로필 알코올(isopropyl alcohol, IPA), 에틸렌 글리콜(ethylene glycol), 부탄올(butanol) 등의 알콜류; 메틸 에틸 케톤(methyl ethyl ketone), 메틸 이소 부틸 케톤(methyl iso butyl ketone, MIBK) 등의 케톤류; 초산에틸, 초산부틸, γ-부티로락톤 등의 에스테르(ester)류; 테트라하이드로퓨란(tetrahydrofuran), 1,4-디옥산 등의 에테르(ether)류; 및 이들의 조합으로 이루어진 군에서 선택된 적어도 하나를 포함할 수 있다. The organic solvent may be, for example, alcohols such as methanol, isopropyl alcohol, IPA, ethylene glycol, butanol, etc .; Ketones such as methyl ethyl ketone and methyl iso butyl ketone (MIBK); Esters such as ethyl acetate, butyl acetate and γ-butyrolactone; Ethers such as tetrahydrofuran and 1,4-dioxane; And at least one selected from the group consisting of a combination thereof.

투명 도전성 필름Transparent conductive film

본 발명의 다른 구현예에서, 상기 저굴절 조성물에 의해 형성된 저굴절층을 포함하는 투명 도전성 필름을 제공한다. 상기 저굴절 조성물은 일 구현예에서 전술한 바와 같고, 상기 저굴절층은 블로킹 방지 성능이 부여되어 안티블로킹 저굴절층으로서의 역할을 수행할 수 있다.In another embodiment of the present invention, it provides a transparent conductive film comprising a low refractive index layer formed by the low refractive index composition. The low refractive index composition is as described above in one embodiment, the low refractive index layer is provided with anti-blocking performance may serve as an anti-blocking low refractive layer.

그에 따라, 상기 저굴절층을 포함하는 투명 도전성 필름은 우수한 블로킹 방지 성능을 구현하면서도 상기 저굴절 조성물의 코팅 과정에서, 표면 외관의 불량률이 감소하고, 굴절률 및 헤이즈가 적절한 수준으로 형성되어 우수한 인덱스 매칭성, 우수한 시인성 및 우수한 광학 물성을 구현할 수 있는 이점이 있다. 또한, 이와 같이 상기 무기 입자의 평균 입경을 적절한 수준으로 감소시킴으로써 상기 저굴절층의 상부에 도전층 형성시 수반되는 어닐링 공정(annealing process)이 더욱 용이하게 진행될 수 있어 도전층의 전기 저항을 낮출 수 있으므로 우수한 전기 전도성을 구현할 수 있다.Accordingly, the transparent conductive film including the low refractive index layer provides excellent blocking prevention performance, while in the coating process of the low refractive index composition, defect rate of the surface appearance is reduced, refractive index and haze are formed at an appropriate level, and excellent index matching is achieved. There is an advantage that can implement the properties, excellent visibility and excellent optical properties. In addition, by reducing the average particle diameter of the inorganic particles to an appropriate level as described above, the annealing process involved in forming the conductive layer on the upper portion of the low refractive index layer may be more easily performed, thereby lowering the electrical resistance of the conductive layer. Therefore, excellent electrical conductivity can be achieved.

예를 들어, 상기 저굴절층은 후술하는 바와 같이 하부에 포함될 수 있는 고굴절층의 상부에 상기 저굴절 조성물을 도포한 후 열경화 반응을 수행하여 형성할 수 있다. 상기 저굴절 조성물의 도포는 예를 들어, 그라비아(gravure) 코팅법, 슬롯 다이(slot die) 코팅법, 스핀 코팅법, 스프레이 코팅법, 바 코팅법, 침적 코팅법 등의 방법을 사용할 수 있으나, 이에 한정되지 않는다For example, the low refractive index layer may be formed by applying the low refractive index composition to the upper portion of the high refractive index layer, which may be included in the lower portion, as described below, and then performing a thermosetting reaction. Application of the low refractive index composition may be, for example, gravure coating, slot die coating, spin coating, spray coating, bar coating, dip coating, or the like. It is not limited to this

또한, 상기 열경화 반응은 약 100℃ 내지 약 170℃의 온도로 열처리하여 수행될 수 있으나, 이에 한정되는 것은 아니다.In addition, the thermosetting reaction may be performed by heat treatment at a temperature of about 100 ℃ to about 170 ℃, but is not limited thereto.

또한, 상기 열경화 반응을 진행한 이후 숙성 공정(aging process)을 더 수행할 수 있고, 상기 숙성 공정은 이 기술분야에서 공지된 조건 및 방법에 따라 수행할 수 있다. In addition, the aging process may be further performed after the thermosetting reaction, and the aging process may be performed according to conditions and methods known in the art.

상기 저굴절층은 상부면에 미세 요철이 형성되고, 상기 미세 요철이 상기 무기 입자에 의해 형성될 수 있고, 예를 들어, 상기 무기 입자의 일부가 상기 저굴절층의 표면으로부터 돌출되어 상기 미세 요철을 형성할 수 있고, 그에 따라 상기 무기 입자의 다른 일부는 상기 저굴절층에 매몰된 상태로 존재할 수 있다. 또한, 상기 무기 입자의 평균 직경이 상기 저굴절층의 두께보다 클 수 있고, 그에 따라 상기 미세 요철을 더욱 용이하게 형성할 수 있다. The low refractive index layer may have fine unevenness formed on an upper surface thereof, and the fine unevenness may be formed by the inorganic particles. For example, a portion of the inorganic particles may protrude from the surface of the low refractive index layer to cause the fine unevenness. In some embodiments, other portions of the inorganic particles may be present in a state buried in the low refractive layer. In addition, the average diameter of the inorganic particles may be larger than the thickness of the low refractive layer, thereby forming the fine irregularities more easily.

즉, 상기 미세 요철 형상은 상기 저굴절 조성물의 도포시 평균 직경이 약 30nm 내지 약 70nm인 무기 입자에 의해 형성될 수 있고, 구체적으로, 상기 저굴절 조성물을 기재층에 도포하는 경우, 상기 무기 입자의 평균 직경이 저굴절층의 두께보다 커서 돌출됨으로써 미세요철 형상이 더욱 용이하게 형성될 수 있고, 그에 따라 상기 저굴절층이 더욱 우수한 블로킹 방지 성능을 구현할 수 있다. That is, the fine concavo-convex shape may be formed by inorganic particles having an average diameter of about 30 nm to about 70 nm when the low refractive index composition is applied, and specifically, when the low refractive index composition is applied to the base layer, the inorganic particles Since the average diameter of the larger than the thickness of the low refractive index layer is protruded, the fine concave-convex shape can be formed more easily, and thus the low refractive layer can implement a better blocking prevention performance.

상기 저굴절층의 두께는 약 10nm 내지 약 50nm일 수 있다. 상기 저굴절층의 두께가 약 10nm 미만인 경우 광학 간섭으로 인한 시인성 저하의 우려가 있고, 약 50 nm를 초과하는 경우 투과율이 너무 낮아 광학 물성이 저하될 수 있어, 상기 범위의 두께를 가짐으로써 인덱스 매칭성을 만족하면서 높은 광투과율 및 낮은 헤이즈를 유지하여 우수한 시인성 및 우수한 광학 물성을 구현할 수 있다.The low refractive layer may have a thickness of about 10 nm to about 50 nm. When the thickness of the low refractive index layer is less than about 10 nm, there is a fear of visibility deterioration due to optical interference, and when the thickness of the low refractive index layer is greater than about 50 nm, the transmittance is too low so that optical properties may be degraded. It can achieve excellent visibility and excellent optical properties by maintaining high light transmittance and low haze while satisfying the properties.

또한, 상기 저굴절층의 글절률은 약 1.40 내지 약 1.50 일 수 있다. 상기 범위 내의 낮은 수준의 굴절률을 가짐으로써 고굴절층과 함께 상기 투명 도전성 필름의 시인성 및 광학 물성을 모두 우수한 수준으로 조절할 수 있다.In addition, the refractive index of the low refractive index layer may be about 1.40 to about 1.50. By having a low level of refractive index within the above range, both the visibility and optical properties of the transparent conductive film together with the high refractive index layer can be adjusted to an excellent level.

도 1는 본 발명의 다른 구현예에 따른 투명 도전성 필름의 두 가지 예시, (a) 및 (b)의 각 단면을 개략적으로 나타낸다. 1 schematically shows each cross section of two examples, (a) and (b), of a transparent conductive film according to another embodiment of the present invention.

상기 투명 도전성 필름은 상기 저굴절층의 하부에 순차적으로 고굴절층 및 기재층을 더 포함하고, 상기 저굴절층의 상부에 도전층을 더 포함할 수 있다. 구체적으로, 도 1의 (a)을 참고하면, 상기 기재층의 일면에 고굴절층, 상기 저굴절층, 도전층을 순차적으로 포함할 수 있다. The transparent conductive film may further include a high refractive index layer and a base layer sequentially below the low refractive layer, and may further include a conductive layer on the low refractive layer. Specifically, referring to FIG. 1A, a high refractive layer, the low refractive layer, and a conductive layer may be sequentially included on one surface of the base layer.

상기 고굴절층은 기재층과 도전층 사이에 절연특성 및 투과율을 향상시키는 역할을 한다. 상기 고굴절층은 무기물, 유기물 또는 또는 이들 모두를 포함하는 재질로 형성될 수 있다. 상기 무기물로는 예를 들어, SiO2, MgF2, Al2O3, NaF, Na3AlF6, LiF, CaF2, BaF2, LaF3, CeF3 등이 있고, 상기 유기물로는 예를 들어, 멜라민 수지, 알키드 수지, 우레탄 수지, 아크릴 수지, 실록산계 폴리머, 유기 실란 축합물 등이 사용될 수 있다. The high refractive index layer serves to improve insulation properties and transmittance between the substrate layer and the conductive layer. The high refractive layer may be formed of a material including an inorganic material, an organic material, or both. In the inorganic material is in, for example, SiO 2, MgF 2, and the like Al 2 O 3, NaF, Na 3 AlF 6, LiF, CaF 2, BaF 2, LaF 3, CeF 3, wherein the organic material is, for example , Melamine resins, alkyd resins, urethane resins, acrylic resins, siloxane based polymers, organosilane condensates and the like can be used.

예를 들어, 상기 고굴절층은 상기 재질의 종류에 따라 도포 후 열경화나 광경화, 스프레이법, 스퍼터링법 등의 이 기술분야에서 공지된 코팅 방법을 사용하여 형성할 수 있다. For example, the high refractive layer may be formed using a coating method known in the art, such as thermal curing, photocuring, spraying, sputtering, etc. after coating according to the type of the material.

또한, 예를 들어, 상기 고굴절층의 두께가 약 15nm 내지 약 100nm일 수 있다. 상기 고굴절층의 두께를 유지함으로써 우수한 투과율 및 시인성이 향상될 수 있고, 응력으로 인한 크랙(Crack) 및 컬(Curl)의 발생을 저하시킬 수 있다. In addition, for example, the thickness of the high refractive layer may be about 15nm to about 100nm. By maintaining the thickness of the high refractive layer can be improved excellent transmittance and visibility, it is possible to reduce the occurrence of cracks and curl (Curl) due to the stress.

또한, 예를 들어, 상기 고굴절층의 글절률은 약 1.65 내지 약 1.8일 수 있다. 상기 범위 내의 높은 수준의 굴절률을 가짐으로써 상기 저굴절층과 함께 상기 투명 도전성 필름의 시인성 및 광학 물성을 모두 우수한 수준으로 조절할 수 있다.Also, for example, the refractive index of the high refractive layer may be about 1.65 to about 1.8. By having a high level of refractive index within the above range it is possible to control both the visibility and optical properties of the transparent conductive film with an excellent level with the low refractive index layer.

상기 기재층은 투명 기재층이고, 예를 들어, 폴리에틸렌테레프탈레이트(PET), 폴리에틸렌나프 탈레이트(PEN), 폴리에테르설폰(PES), 폴리카보네이트(PC), 폴리프로필렌(PP), 폴리비닐 클로라이드(PVC), 폴리에틸렌(PE), 폴리메틸메타아크릴레이트(PMMA), 에틸렌 비닐 알코올(EVA), 폴리비닐알콜(PVA) 및 이들의 조합으로 이루어진 군으로부터 선택된 적어도 하나를 포함하는 재질로 형성될 수 있으나, 이에 제한되는 것은 아니다.The base layer is a transparent base layer, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polycarbonate (PC), polypropylene (PP), polyvinyl chloride (PVC), polyethylene (PE), polymethyl methacrylate (PMMA), ethylene vinyl alcohol (EVA), polyvinyl alcohol (PVA) and combinations thereof may be formed of a material comprising at least one selected from the group consisting of However, it is not limited thereto.

또한, 상기 기재층은 단일층 또는 다층 구조의 필름일 수 있고, 상기 기재층의 총 두께는 예를 들어, 약 20㎛ 내지 약 500㎛일 수 있다. In addition, the substrate layer may be a film of a single layer or a multi-layer structure, the total thickness of the substrate layer may be, for example, about 20㎛ to about 500㎛.

상기 도전층은 예를 들어, 산화인듐주석(Indium Tin Oxide, ITO), 산화아연(ZnO), 아연산화주석(Zinc Tin Oxide, ZTO), 불소도핑 산화주석(Fluorine-doped Tin Oxide, FTO), 은 나노와이어(Al-doped ZnO, AZO), 및 이들의 조합으로 이루어진 군에서 선택된 적어도 하나를 포함할 수 있다. The conductive layer may include, for example, indium tin oxide (ITO), zinc oxide (ZnO), zinc tin oxide (ZTO), fluorine-doped tin oxide (FTO), It may include at least one selected from the group consisting of silver nanowires (Al-doped ZnO, AZO), and combinations thereof.

상기 도전층의 두께는 약 5nm 내지 약 50nm일 수 있고, 상기 도전층의 두께를 상기 범위로 유지함으로써 상기 투명 도전성 필름의 총 두께를 지나치게 증가시키지 않으면서 우수한 광학 물성을 구현할 수 있다.The conductive layer may have a thickness of about 5 nm to about 50 nm, and by maintaining the thickness of the conductive layer in the range, excellent optical properties may be realized without excessively increasing the total thickness of the transparent conductive film.

상기 기재층의 일면 또는 양면에 접하는 하드코팅층을 더 포함할 수 있고, 그에 따라 상기 저굴절층 및 상기 고굴절층을 충분히 지지하여 보호하고 상기 투명 도전성 필름의 경도를 향상시킬 수 있으면서 굴절률이 적절히 조절되어 광의 상쇄간섭 등의 현상이 발생하여 인덱스 매칭성을 더욱 용이하게 만족시킬 수 있다. It may further include a hard coating layer in contact with one side or both sides of the base layer, accordingly the refractive index is properly adjusted while supporting and protecting the low refractive index layer and the high refractive index layer to improve the hardness of the transparent conductive film Phenomenon such as light interference may occur, and the index matching may be more easily satisfied.

상기 하드코팅층은 예를 들어, 자외선 경화성 수지, 평균 직경이 약 1nm 내지 약 30nm인 나노 무기 입자, 광중합 개시제 및 이들의 조합으로 이루어진 군에서 선택된 적어도 하나를 포함하는 하드코팅층 조성물을 광경화시켜 형성할 수 있고, 상기 평균 직경이 약 1nm 내지 약 30nm인 나노 무기 입자는 상기 하드코팅층 내부에 매몰되어 표면 경도를 향상시킬 수 있으나, 블로킹 방지 성능은 거의 구현할 수 없다. 구체적으로, 상기 하드코팅층에 블로킹 방지 성능을 부여하기 위해서는 무기 입자의 평균 직경이 약 1㎛ 이상이 되어야 하는데 이와 같이 평균 직경이 큰 무기 입자를 포함하는 경우 코팅시 표면 외관 불량이 발생할 수 있으면서 헤이즈가 너무 증가하여 광학 물성이 저하될 수 있고, 또한, 제조 과정에서 연속적으로 생산하는 경우 개개의 제품마다 균일한 물성을 갖기 어려울 수 있다. The hard coating layer may be formed by photocuring a hard coating layer composition including, for example, at least one selected from the group consisting of an ultraviolet curable resin, nano inorganic particles having an average diameter of about 1 nm to about 30 nm, a photopolymerization initiator, and a combination thereof. The nano-inorganic particles having an average diameter of about 1 nm to about 30 nm may be embedded in the hard coating layer to improve surface hardness, but hardly prevent blocking performance. Specifically, in order to provide the anti-blocking performance to the hard coating layer, the average diameter of the inorganic particles should be about 1 μm or more. In the case of including the inorganic particles having a large average diameter as described above, the surface appearance defects may occur while coating the haze. It may increase too much to deteriorate the optical properties, and when it is produced continuously in the manufacturing process, it may be difficult to have uniform physical properties for each product.

상기 하드코팅층의 두께는 약 900nm 내지 약 2000nm일 수 있다. 상기 하드코팅층의 두께가 약 900nm 미만인 경우 상기 투명 도전성 필름의 표면 경도를 충분한 수준으로 구현할 수 없어 내구성이 낮을 수 있고, 약 2000nm 초과인 경우 상기 하드코팅층이 컬링(Curling)될 우려가 있어, 상기 범위의 두께를 가짐으로써 우수한 표면 경도를 구현하면서 컬링을 방지할 수 있다.The hard coating layer may have a thickness of about 900 nm to about 2000 nm. If the thickness of the hard coating layer is less than about 900nm can not implement the surface hardness of the transparent conductive film to a sufficient level, the durability may be low, if the hard coating layer is greater than about 2000nm there is a fear that the hard coating layer curling (Curling), the range By having a thickness of the curling can be prevented while implementing an excellent surface hardness.

상기 하드코팅층의 글절률은 약 1.45 내지 약 1.7일 수 있으나, 이에 제한되는 것은 아니다. The writing rate of the hard coat layer may be about 1.45 to about 1.7, but is not limited thereto.

다른 구현예에서, 상기 투명 도전성 필름의 광투과율이 약 85% 이상이고, 헤이즈가 약 0.1% 내지 약 0.8%일 수 있고, 구체적으로 상기 광투과율은 약 87% 내지 약 92%일 수 있다. 상기 범위 내의 광투과율 및 헤이즈를 가짐으로써 인덱스 매칭성을 구현하면서 우수한 광학 물성을 구현할 수 있다. 본 명세서에서, 상기 광투과율 및 상기 헤이즈는 예를 들어, 약 100㎛ 두께의 투명 도전성 필름을 기준으로 하여 측정한 값을 의미한다. In another embodiment, the light transmittance of the transparent conductive film may be about 85% or more, and the haze may be about 0.1% to about 0.8%, and specifically, the light transmittance may be about 87% to about 92%. By having light transmittance and haze in the above range it is possible to implement excellent optical properties while implementing the index matching. In the present specification, the light transmittance and the haze mean a value measured based on, for example, a transparent conductive film having a thickness of about 100 μm.

본 발명의 또 다른 구현예에서, 하기 화학식 1의 실란 화합물, 하기 화학식 2의 실란 화합물 및, 평균 직경이 30nm 내지 70nm인 무기 입자를 혼합하여 이들을 포함하는 원료 조성물을 준비하는 단계; 및 상기 원료 조성물에 대하여 졸-겔 반응을 진행시켜 저굴절 조성물을 제조하는 단계;를 포함하는 저굴절 조성물의 제조방법을 제공한다:In another embodiment of the present invention, preparing a raw material composition comprising a silane compound of Formula 1, a silane compound of Formula 2 and inorganic particles having an average diameter of 30nm to 70nm; Proceeding with the sol-gel reaction with respect to the raw material composition to produce a low refractive index composition provides a method for producing a low refractive index composition comprising:

[화학식1][Formula 1]

R1 xSi(OR2)4-x R 1 x Si (OR 2 ) 4-x

[화학식 2][Formula 2]

Si(OR3)4 Si (OR 3 ) 4

상기 화학식 1에서, 상기 R1은 탄소수 1개 내지 18개의 알킬기, 탄소수 2개 내지 6개의 에스테르기, 탄소수 2개 내지 12개의 에폭시기, 탄소수 2개 내지 12개의 알케닐기, 탄소수 6개 내지 12개의 방향족기, 탄소수 3개 내지 18개의 아크릴기, 글리시딜기, 아민기, 티올기 또는 할로겐기이고, 상기 R2 및 상기 R3는 각각 독립적으로, H, 또는 탄소수 1개 내지 18개의 알킬기이며, 상기 x는 1, 2, 또는 3이다. 즉, 상기 제조방법에 의해 일 구현예에서 전술한 저굴절 조성물을 제조할 수 있고, 상기 화학식 1의 실란 화합물, 상기 화학식 2의 실란 화합물은 일 구현예에서 전술한 바와 같다.In Formula 1, R 1 is an alkyl group having 1 to 18 carbon atoms, an ester group having 2 to 6 carbon atoms, an epoxy group having 2 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, and an aromatic group having 6 to 12 carbon atoms , An acrylic group having 3 to 18 carbon atoms, a glycidyl group, an amine group, a thiol group or a halogen group, and each of R2 and R3 is independently H or an alkyl group having 1 to 18 carbon atoms, and x is 1 , 2, or 3. That is, the low refractive index composition described above in one embodiment may be prepared by the preparation method, and the silane compound of Formula 1 and the silane compound of Formula 2 are the same as described above in one embodiment.

예를 들어, 상기 화학식 1의 실란 화합물 및 상기 화학식 2의 실란 화합물의 총합 100 중량부에 대하여 상기 무기 입자를 약 0.5 중량부 내지 약 20 중량부로 혼합하여 상기 원료 조성물을 준비할 수 있고, 구체적으로는 약 7 중량부 내지 약 13 중량부로 포함할 수 있다. For example, the raw material composition may be prepared by mixing the inorganic particles in an amount of about 0.5 parts by weight to about 20 parts by weight based on 100 parts by weight of the total of the silane compound of Formula 1 and the silane compound of Formula 2, and specifically, May comprise about 7 parts by weight to about 13 parts by weight.

또한, 상기 원료 조성물은 산촉매, 물, 유기 용매, 및 이들의 조합으로 이루어진 군에서 선택된 적어도 하나를 더 혼합하여 준비할 수 있고, 상기 산촉매, 및 상기 유기 용매는 일 구현예에서 전술한 바와 같다.In addition, the raw material composition may be prepared by further mixing at least one selected from the group consisting of an acid catalyst, water, an organic solvent, and a combination thereof, and the acid catalyst and the organic solvent are as described above in one embodiment.

상기 졸-겔 반응을 진행시키는 동안 상기 실란 화합물들 간에 서로 화학 반응을 진행하여 오가노폴리실록산이 형성될 수 있고, 상기 오가노폴리실록산, 및 상기 화학 반응은 일 구현예에서 전술한 바와 같다.During the sol-gel reaction, the silane compounds may be chemically reacted with each other to form an organopolysiloxane, and the organopolysiloxane and the chemical reaction are the same as described above in one embodiment.

또한, 상기 저굴절 조성물이 상기 오가노폴리실록산을 약 10 중량% 내지 약 80 중량%로 포함하도록 상기 원료 조성물에 포함되는 상기 화학식 1의 실란 화합물 및 상기 화학식 2의 실란 화합물 각각의 함량을 합한 총 함량을 조절할 수 있다.In addition, the total content of the sum of the content of each of the silane compound of Formula 1 and the silane compound of Formula 2 included in the raw material composition such that the low refractive index composition comprises about 10% to about 80% by weight of the organopolysiloxane Can be adjusted.

예를 들어, 상기 화학식 1의 실란 화합물 대 상기 화학식 2의 실란 화합물의 중량비가 약 1:5 내지 약 1:99가 되도록 상기 원료 조성물을 준비할 수 있다. 상기 범위 내의 중량비로 혼합함으로써 상기 형성된 오가노폴리실록산에 포함된 유기성 부분 및 무기성 부분의 함량을 적절히 조절하여 우수한 인덱스 매칭성, 우수한 부착성 및 내산화성을 구현할 수 있다. 구체적으로, 약 1:5 미만인 경우 유기성 부분이 너무 많아 수세 공정시 사용 가능한 염기성 화학 물질에 의해 코팅이 손상되어 인덱스 매칭성이 달라지게 될 수 있고, 또한 약 1:99 초과인 경우 무기성 부분이 너무 많아 코팅의 유연성이 저하되어 부착성 및 산화성이 감소할 수 있다.For example, the raw material composition may be prepared such that a weight ratio of the silane compound of Formula 1 to the silane compound of Formula 2 is about 1: 5 to about 1:99. By mixing in a weight ratio within the above range it is possible to appropriately adjust the content of the organic portion and the inorganic portion included in the formed organopolysiloxane can implement excellent index matching, excellent adhesion and oxidation resistance. Specifically, if the ratio is less than about 1: 5, the organic portion may be so large that the coating may be damaged by the basic chemicals available in the washing process, thereby changing the index matching. Too much of the coating's flexibility can be degraded, resulting in reduced adhesion and oxidation.

상기 화학식 1의 실란 화합물이 예를 들어, 약 1 중량% 내지 약 19 중량%로 포함되도록 상기 원료 조성물을 준비할 수 있으나, 이에 제한되는 것은 아니다.The raw material composition may be prepared such that the silane compound of Formula 1 is included, for example, in about 1% by weight to about 19% by weight, but is not limited thereto.

상기 제조방법에서, 상기 졸-겔 반응은 예를 들어, 약 20℃ 내지 약 60℃의 온도에서 약 8시간 내지 약 48시간 동안 교반하여 수행될 수 있으나, 이에 제한되는 것은 아니다. 상기 범위 내의 온도 및 시간 조건 하에서 교반시킴으로써 가수분해 반응, 축합 반응 등의 화학 반응이 충분히 진행되어 상기 오가노폴리실록산을 더욱 용이하게 형성할 수 있다.In the preparation method, for example, the sol-gel reaction may be performed by stirring at a temperature of about 20 ° C. to about 60 ° C. for about 8 hours to about 48 hours, but is not limited thereto. By stirring under the temperature and time conditions within the above range, chemical reactions such as hydrolysis reaction, condensation reaction and the like sufficiently proceed to form the organopolysiloxane more easily.

또한, 상기 졸-겔 반응을 완료한 이후 본 발명의 범위를 벗어나지 않는 범위 내에서 상기 저굴절 조성물에 발명의 목적 및 용도에 따라 유기 용매를 적절히 혼합하여 희석시켜 사용할 수 있다. 상기 유기 용매는 일 구현예에서 전술한 바와 같다.In addition, after the completion of the sol-gel reaction, the organic solvent may be appropriately mixed and diluted with the low refractive index composition according to the purpose and use of the invention within the scope of the present invention. The organic solvent is as described above in one embodiment.

이하에서는 본 발명의 구체적인 실시예들을 제시한다. 다만, 하기에 기재된 실시예들은 본 발명을 구체적으로 예시하거나 설명하기 위한 것에 불과하며, 이로서 본 발명이 제한되어서는 아니된다.The following presents specific embodiments of the present invention. However, the embodiments described below are merely for illustrating or explaining the present invention in detail, and thus the present invention is not limited thereto.

<제조예><Production example>

제조예 1-1. 저굴절 조성물Preparation Example 1-1. Low refractive composition

트리메톡시(메틸)실란 1 중량% 및 테트라-에톡시오르소실리케이트(TEOS) 15 중량%, 평균 직경이 50nm인 실리카 입자 분산 졸(일신화학, MEK-ST-up), 물, 에탄올 및 1M 질산을 혼합하여 원료 조성물을 준비하였고, 상기 원료 조성물은 상기 트리메톡시(메틸)실란 및 상기 테트라-에톡시오르소실리케이트(TEOS)의 총합 100 중량부에 대하여 상기 실리카 입자 10 중량부를 포함하였다. 1% by weight of trimethoxy (methyl) silane and 15% by weight of tetra-ethoxyorthosilicate (TEOS), silica particle dispersion sol (ILC, MEK-ST-up), water, ethanol and 1M with an average diameter of 50 nm Nitric acid was mixed to prepare a raw material composition, and the raw material composition included 10 parts by weight of the silica particles based on 100 parts by weight of the total of the trimethoxy (methyl) silane and the tetra-ethoxy orthosilicate (TEOS).

이어서, 상기 원료 조성물을 40℃에서 24시간 동안 교반하여 졸-겔 반응을 진행시켜 저굴절 조성물을 제조하였고, 상기 저굴절 조성물 내에 상기 트리메톡시(메틸)실란 및 상기 테트라-에톡시오르소실리케이트(TEOS)로 이루어진 실란 화합물들 간에 서로 화학 반응을 진행하여 오가노폴리실록산이 형성되었다.Subsequently, the raw material composition was stirred at 40 ° C. for 24 hours to proceed with a sol-gel reaction to prepare a low refractive composition, and the trimethoxy (methyl) silane and the tetra-ethoxy orthosilicate in the low refractive composition Organopolysiloxanes were formed by chemical reaction between silane compounds consisting of (TEOS).

구체적으로, 상기 저굴절 조성물은 상기 오가노폴리실록산 30 중량%를 포함하였고, 상기 오가노폴리실록산 100 중량부를 기준으로 상기 실리카 입자를 10 중량부로 포함하였다. Specifically, the low refractive index composition included 30% by weight of the organopolysiloxane, and included 10 parts by weight of the silica particles based on 100 parts by weight of the organopolysiloxane.

제조예 1-2. 저굴절 조성물 (평균 직경이 30nm 실리카 입자 분산졸을 사용) Preparation Example 1-2. Low refractive composition (average diameter 30nm silica particle dispersion sol is used)

평균 직경이 30nm 실리카 입자 분산졸(일신화학, MEK-ST)를 사용한 것을 제외하고는 상기 제조예 1-1과 동일한 방법으로 저굴절 조성물을 제조하였다.A low refractive index composition was prepared in the same manner as in Preparation Example 1-1, except that an average diameter of 30 nm silica particle dispersion sol (ILC, MEK-ST) was used.

제조예 1-3. 저굴절 조성물 (평균 직경이 70nm 실리카 입자 분산졸을 사용) Preparation Example 1-3. Low refractive composition (average diameter 70nm silica particle dispersion sol is used)

평균 직경이 70nm 실리카 입자 분산졸(일신화학, IPAST-up)를 사용한 것을 제외하고는 상기 제조예 1-1과 동일한 방법으로 저굴절 조성물을 제조하였다.A low refractive index composition was prepared in the same manner as in Preparation Example 1-1, except that an average diameter of 70 nm silica particle dispersion sol (ILC, IPAST-up) was used.

제조예 1-4. 저굴절 조성물 (평균 직경이 20nm 실리카 입자 분산졸을 사용) Preparation Example 1-4. Low refractive composition (average diameter 20nm silica particle dispersion sol is used)

평균 직경이 20nm인 실리카 입자 분산졸(일신화학, IPAST)를 사용한 것을 제외하고는 상기 제조예 1-1과 동일한 방법으로 저굴절 조성물을 제조하였다.A low refractive index composition was prepared in the same manner as in Preparation Example 1-1, except that silica particle dispersion sol having a mean diameter of 20 nm (ILC, IPAST) was used.

제조예 1-5. 저굴절 조성물 (평균 직경이 200nm 실리카 입자 분산졸을 사용) Preparation Example 1-5. Low refractive composition (average diameter 200nm silica particle dispersion sol is used)

평균 직경이 200nm인 실리카 입자 분산졸(일신화학, MEK20)를 사용한 것을 제외하고는 상기 제조예 1-1과 동일한 방법으로 저굴절 조성물을 제조하였다.A low refractive index composition was prepared in the same manner as in Preparation Example 1-1, except that silica particle dispersion sol (ILSIN, MEK20) having an average diameter of 200 nm was used.

제조예 1-6. 저굴절 조성물 (실리카 입자를 혼합하지 않음) Preparation Example 1-6. Low refractive composition (does not mix silica particles)

실리카 입자를 혼합하지 않은 것을 제외하고는 상기 제조예 1-1과 동일한 방법으로 저굴절 조성물을 제조하였다.A low refractive index composition was prepared in the same manner as in Preparation Example 1-1, except that silica particles were not mixed.

제조예 2. 고굴절 조성물 Preparation Example 2 High Refractive Composition

총 고형분 100 중량부에 대하여 자외선 경화형 아크릴레이트 (상품명 HX-920UV, Kyoeisha) 36 중량부, 고굴절 나노입자 60 중량부(ZrO2 나노입자), 광중합 개시제 4 중량부(상품명 Irgacure-184, BASF)를 혼합하고 희석용매 메틸에틸케톤(MEK)으로 희석하여 고형분 5%의 고굴절 조성물(굴절률 1.68)을 제조하였다. 36 parts by weight of an ultraviolet curable acrylate (trade name HX-920UV, Kyoeisha), 60 parts by weight of high refractive nanoparticles (ZrO2 nanoparticles), and 4 parts by weight of a photopolymerization initiator (trade name Irgacure-184, BASF) based on 100 parts by weight of total solids And diluted with diluent solvent methyl ethyl ketone (MEK) to prepare a high refractive index composition (refractive index 1.68) of 5% solids.

제조예 3. 하드코팅용 조성물 Preparation Example 3 Composition for Hard Coating

총 고형분 100 중량부에 대하여 디펜타에리스리톨헥사 아크릴레이트 20 중량부, 자외선 경화형 아크릴레이트 (상품명 HX-920UV, Kyoeisha) 60 중량부, 실리카 미립자 15 중량부(상품명 XBA-ST, 일산 화학), 광중합 개시제 Irgacure-184 5 중량부(Ciba사)를 혼합하고 희석용매 메틸에틸케톤(MEK)으로 희석하여 고형분 45%의 하드코팅용 조성물(굴절률 1.50)을 제조하였다.20 parts by weight of dipentaerythritol hexaacrylate, 60 parts by weight of ultraviolet curable acrylate (trade name HX-920UV, Kyoeisha), 15 parts by weight of silica fine particles (trade name XBA-ST, Ilsan Chemical), and photopolymerization initiator based on 100 parts by weight of total solids 5 parts by weight of Irgacure-184 (Ciba) was mixed and diluted with a diluting solvent methyl ethyl ketone (MEK) to prepare a composition for hard coating (refractive index 1.50) having a solid content of 45%.

<실시예 및 비교예><Examples and Comparative Examples>

실시예 1Example 1

제조예 3의 하드코팅층 조성물을 Meyer bar를 이용해 50㎛ PET필름 상에, 건조막 두께가 1.5㎛이 되도록 도포하고, 180W 고압수은 등으로 300mJ의 자외선을 조사하여 경화시켜 단면에 하드코팅층을 포함하는 필름을 제작했다. The hard coating layer composition of Preparation Example 3 was coated on a 50 μm PET film using a Meyer bar to have a dry film thickness of 1.5 μm, and cured by irradiating 300mJ UV light with 180W high pressure mercury or the like to include a hard coating layer on the cross section. The film was produced.

그 후, 상기 하드코팅층 상부에 제조예 2로 제조된 고굴절 조성물을 이용해 건조막 두께가 50nm가 되도록 도포하고, 180W 고압수은등으로 300mJ의 자외선을 조사하여 경화시켜 고굴절층을 형성하였다.Then, using the high refractive index composition prepared in Preparation Example 2 on the top of the hard coating layer was applied so that the dry film thickness is 50nm, and cured by irradiation with ultraviolet light of 300mJ with 180W high-pressure mercury lamp to form a high refractive index layer.

이어서, 상기 고굴절층의 상부에 제조예 1-1로 제조된 저굴절 조성물을 이용하여 건조막 두께가 20nm가 되도록 도포하고, 150℃ 오븐에서 1분 동안 경화시켜 저굴절층을 형성하였다. 또한 이어서, 인듐:주석 = 95:5의 ITO 타겟을 이용하여 저굴절층의 상부에 산화인듐주석을 증착한 후 150℃에서 1시간 동안 열처리함으로써 어닐링 공정(annealing process)을 적용하여 20nm 두께의 도전층(ITO층)을 형성함으로써 투명 도전성 필름을 제작하였다. Subsequently, using a low refractive index composition prepared in Preparation Example 1-1 on the high refractive layer to apply a dry film thickness of 20nm, and cured for 1 minute in 150 ℃ oven to form a low refractive layer. Next, indium tin oxide was deposited on the low refractive layer by using an ITO target of indium: tin = 95: 5, and then subjected to an annealing process by applying an annealing process at 150 ° C. for 1 hour. The transparent conductive film was produced by forming a layer (ITO layer).

실시예 2Example 2

상기 제조예 1-2의 저굴절 조성물을 사용하여 저굴절층을 형성하는 것을 제외하고는 상기 실시예 1과 동일한 방법으로 투명 도전성 필름을 제작하였다.A transparent conductive film was prepared in the same manner as in Example 1, except that the low refractive layer was formed using the low refractive composition of Preparation Example 1-2.

실시예 3Example 3

상기 제조예 1-3의 저굴절 조성물을 사용하여 저굴절층을 형성하는 것을 제외하고는 상기 실시예 1과 동일한 방법으로 투명 도전성 필름을 제작하였다.A transparent conductive film was prepared in the same manner as in Example 1 except that the low refractive layer was formed using the low refractive composition of Preparation Example 1-3.

비교예 1Comparative Example 1

상기 제조예 1-4의 저굴절 조성물을 사용하여 저굴절층을 형성하는 것을 제외하고는 상기 실시예 1과 동일한 방법으로 투명 도전성 필름을 제작하였다.A transparent conductive film was prepared in the same manner as in Example 1, except that the low refractive layer was formed using the low refractive composition of Preparation Example 1-4.

비교예 2Comparative Example 2

상기 제조예 1-5의 저굴절 조성물을 사용하여 저굴절층을 형성하는 것을 제외하고는 상기 실시예 1과 동일한 방법으로 투명 도전성 필름을 제작하였다.A transparent conductive film was prepared in the same manner as in Example 1, except that the low refractive layer was formed using the low refractive composition of Preparation Example 1-5.

비교예 3Comparative Example 3

상기 제조예 1-6의 저굴절 조성물을 사용하여 저굴절층을 형성하는 것을 제외하고는 상기 실시예 1과 동일한 방법으로 투명 도전성 필름을 제작하였다.A transparent conductive film was prepared in the same manner as in Example 1 except that the low refractive layer was formed using the low refractive composition of Preparation Example 1-6.

실험예 Experimental Example

실시예 1-3 및 비교예 1-3에 따른 각 투명 도전성 필름 및 이들에 포함된 각 저굴절층의 물성을 평가하여 하기 표 1에 기재하였다.The physical properties of each of the transparent conductive films according to Examples 1-3 and Comparative Examples 1-3 and each of the low refractive layers included therein were evaluated and listed in Table 1 below.

(블로킹 방지 성능)(Blocking prevention performance)

측정방법: 상기 실시예 및 비교예 각각의 투명 도전성 필름을 10cmX10cm(가로X세로) 크기로 잘라 10장의 시편을 각각 준비한 후 상기 10장의 시편을 각각 적층하였고, 그에 따라 형성된 10층 구조의 필름을 금속판 사이에 넣고, 상부에 위치한 금속판 위에 5kg 추를 사용하여 압력을 가한 상태로 50℃의 온도에서 24시간 동안 방치한 이후 꺼내어 상기 10층 구조의 필름을 한 장씩 떼어내면서 블로킹 방지 성능을 평가하였다. 상기 필름이 잘 분리되어 상기 투명 도전성 필름의 물성을 유지함으로써 블로킹 방지 성능이 우수한 경우를 “○”로 표시하였고, 상기 필름이 잘 분리되지 않아 상기 투명 도전성 필름의 물성이 저하되어 블로킹 방지 성능이 열등한 경우를 “Ⅹ”로 표시하였다. Measuring method: After cutting the transparent conductive film of each of the Examples and Comparative Examples to the size of 10cm x 10cm (width X length) to prepare 10 specimens, and then laminated the 10 specimens, the film of the 10-layer structure formed according to the metal plate In between, and placed on top of the metal plate placed on the top using a 5kg weight under pressure at a temperature of 50 ℃ for 24 hours and then taken out to remove the film of the 10-layer structure one by one to evaluate the anti-blocking performance. The case where the film is well separated and the blocking prevention performance is excellent by maintaining the physical properties of the transparent conductive film is marked as “○”, and the film is not separated well so that the physical property of the transparent conductive film is degraded and the blocking prevention performance is inferior. The case is marked with "Ⅹ".

(인덱스 매칭성) (Index matching)

측정방법: 상기 실시예 및 비교예 각각의 투명 도전성 필름에 대하여 표면 외관을 육안으로 관찰하여 도전층 내부의 도전성 물질로 형성된 패턴이 보이는지 여부를 평가하였다. 상기 도전성 물질로 형성된 패턴이 전혀 보이지 않아 인덱스 매칭성 또는 시인성이 우수한 경우를 “○”로 표시하였고, 흐리게 보여 보통인 경우를 “△”로 표시하였으며, 선명하게 보여 열등한 경우를 “X”로 표시하였다.Measuring method: The surface appearance of each of the transparent conductive films of Examples and Comparative Examples was visually observed to evaluate whether the pattern formed of the conductive material inside the conductive layer was visible. When the pattern formed of the conductive material is not visible at all, the index matching or visibility is excellent, and the case is displayed as "○". It was.

(코팅성)(Coating property)

측정방법: 상기 실시예 1-3 및 상기 비교예 1-3에서 전술한 바와 같이, 고굴절층에 저굴절층을 각각 형성한 후 각 저굴절층의 표면 외관에서 백탁, 크랙 또는 부분적인 뭉침 등의 발생 여부를 육안으로 관찰하여 코팅성을 평가하였다. 구체적으로, 백탁, 크랙, 또는 부분적인 뭉침이 발생하지 전혀 않아 코팅성이 우수한 경우를 “○”로 표시하였고, 적은 수준으로 발생하여 코팅성이 보통인 경우를 “△”로 표시하였으며, 현저히 발생하여 코팅성이 열등한 경우를 “X“로 표시하였다. Measuring method: As described above in Examples 1-3 and Comparative Examples 1-3, after forming a low refractive layer in each of the high refractive layer, such as white turbidity, cracks or partial aggregation in the surface appearance of each low refractive layer It was observed by the naked eye to evaluate the coating property. Specifically, the case where the coating property is excellent due to no white cloud, crack, or partial agglomeration does not occur is indicated as “○”, and the case where the coating property is normal due to the low level is indicated as “△”, and is markedly generated. In this case, the inferior coating property was indicated by "X".

(전기 전도성)(Electrical conductivity)

측정방법: 도전층 성막 후 경정화 공정 후에 전기저항측정기(MITSUBISHI CHEMICAL, LORESTA-GP[MCP-T610])를 사용하여 표면 저항을 측정하여 전기 전도성을 평가하였고, 물리법칙에 따라 상기 표면 저항이 낮을수록 상기 전기 전도성이 우수하다. 상기 면저항이 150Ω/□ 이하로 측정되어 전기 전도성이 우수한 경우를 “○”로 표시하였고, 150~170Ω/□로 측정되어 보통인 경우를 “△”로 표시하였으며, 170 Ω/□ 이상으로 측정되어 열등한 경우를 “X”로 표기하였다.Measuring method: After conducting the hardening process after the conductive layer was formed, the electrical resistance was measured by using an electrical resistance measuring instrument (MITSUBISHI CHEMICAL, LORESTA-GP [MCP-T610]) to evaluate the electrical conductivity. The better the electrical conductivity is. When the sheet resistance is measured to be 150Ω / □ or less and the electrical conductivity is excellent, it is marked as “○”, and it is measured to be 150 ~ 170Ω / □, and the normal case is marked as “△” and is measured to be 170Ω / □ or more. Inferior cases are marked with “X”.

(광투과율 및 헤이즈)(Light transmittance and haze)

측정 방법: 상기 각각의 투명 도전성 필름에 대하여 hazemeter(Nippon Denshoku 社, NDH 5000)를 사용하여 측정하였다. 상기 투명 도전성 필름의 두께는 약 100㎛였다. Measuring method: Each transparent conductive film was measured using a hazemeter (Nippon Denshoku, NDH 5000). The thickness of the said transparent conductive film was about 100 micrometers.

표 1 실시예1 실시예2 실시예3 비교예1 비교예2 비교예3 실리카 입자의평균 직경(nm) 50 30 70 20 200 - 블로킹 방지 성능 X X 인덱스 매칭성 코팅성 전기 전도성 X 광투과율(%) 89.2 89.5 88.9 89.5 87.9 89.5 헤이즈(%) 0.4 0.4 0.5 0.3 1.1 0.3 Table 1 Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Comparative Example 3 Average diameter of silica particles (nm) 50 30 70 20 200 - Anti-blocking performance X X Index matching Coating Electrical conductivity X Light transmittance (%) 89.2 89.5 88.9 89.5 87.9 89.5 Haze (%) 0.4 0.4 0.5 0.3 1.1 0.3

상기 표 1에 나타난 바와 같이, 실시예 1 내지 3에 따른 투명 도전성 필름은 물성들이 거의 우수한 수준으로 평가되었고, 특히 실시에 1의 경우 블로킹 방지 성능, 인덱스 매칭성 및 전기 전도성이 동시에 우수한 수준으로 구현되었음을 명확히 확인할 수 있었다.As shown in Table 1, the transparent conductive film according to Examples 1 to 3 was evaluated to have almost excellent physical properties, and in particular, in the case of Example 1, the anti-blocking performance, the index matching property, and the electrical conductivity were simultaneously implemented. It was clearly confirmed.

반면, 비교예 1 및 3에 따른 투명 도전성 필름은 실리카 입자들은 도전층 형성시 어닐링 공정을 방해하지 않아 유통 과정을 적용하기 이전의 전기 전도성은 양호하나, 특히, 블로킹 방지 성능이 현저히 낮은 수준으로 평가되었고, 그에 따라 롤 형태로 권취되거나, 또는 복수 장의 필름이 적층되어 유통되는 경우 이들이 서로 달라붙어 이를 터치 스크린 패널 등에 적용하기 위해 펼치거나 서로 떼어내는 과정에서 손상됨으로써 투명 도전성 필름의 성능이 현저히 저하되어 투명 도전성 필름으로서의 역할을 제대로 수행할 수 없음을 명확히 예상할 수 있다. 게다가, 비교예 2에 따른 투명 도전성 필름의 경우에는 인덱스 매칭성 및 코팅성도 비교예 1보다 낮은 것으로 평가되었다.On the other hand, in the transparent conductive films according to Comparative Examples 1 and 3, the silica particles did not interfere with the annealing process when the conductive layer was formed, and thus the electrical conductivity before the distribution process was good, but the anti-blocking performance was particularly low. Therefore, when rolled up or rolled up, or when a plurality of films are stacked and distributed, they stick to each other and are damaged in the process of being unfolded or peeled off for application to a touch screen panel, etc., thereby significantly reducing the performance of the transparent conductive film. It can be clearly expected that the role as the transparent conductive film cannot be properly performed. Moreover, in the case of the transparent conductive film which concerns on the comparative example 2, the index matching property and coating property were also evaluated to be lower than the comparative example 1.

또한, 비교예 2에 따른 투명 도전성 필름은 인덱스 매칭성, 코팅성은 보통인 수준으로 평가되었으나, 헤이즈가 열등하여 광학 물성이 낮으면서 도전층 형성시 실리카 입자에 의해 어닐링 공정이 방해를 받아 도전층의 전기 전항성이 증가하여 전기 전도성이 현저히 낮은 것으로 평가되었고 그에 따라, 투명 도전성 필름으로서의 역할을 제대로 수행할 수 없음을 명확히 예상할 수 있다. In addition, although the transparent conductive film according to Comparative Example 2 was evaluated to have a moderate index matching property and coating property, the haze was inferior and the optical properties were low, and the annealing process was interrupted by the silica particles during the formation of the conductive layer. It has been estimated that the electrical conductivity is increased and the electrical conductivity is markedly low, and therefore, the role as a transparent conductive film cannot be properly performed.

Claims (19)

오가노폴리실록산(organopolysiloxane) 및 평균 직경이 30nm 내지 70nm인 무기 입자를 포함하는 Organopolysiloxane and inorganic particles having an average diameter of 30 nm to 70 nm 저굴절 조성물. Low refractive composition. 제1항에 있어서,The method of claim 1, 상기 오가노폴리실록산 100 중량부에 대하여 상기 무기 입자를 0.5 중량부 내지 20 중량부로 포함하는 0.5 to 20 parts by weight of the inorganic particles based on 100 parts by weight of the organopolysiloxane 저굴절 조성물.Low refractive composition. 제1항에 있어서,The method of claim 1, 상기 오가노폴리실록산은 탄소수 1개 내지 18개의 알킬기, 탄소수 1개 내지 18개의 알콕시기, 탄소수 2개 내지 6개의 에스테르기, 탄소수 2개 내지 12개의 에폭시기, 탄소수 2개 내지 12개의 알케닐기, 탄소수 6개 내지 12개의 방향족기, 탄소수 3개 내지 18개의 아크릴기, 글리시딜기, 아민기, 티올기, 할로겐기 및 이들의 조합으로 이루어진 군에서 선택된 적어도 하나의 관능기를 포함하는The organopolysiloxane is an alkyl group of 1 to 18 carbon atoms, an alkoxy group of 1 to 18 carbon atoms, an ester group of 2 to 6 carbon atoms, an epoxy group of 2 to 12 carbon atoms, an alkenyl group of 2 to 12 carbon atoms, 6 carbon atoms At least one functional group selected from the group consisting of 12 to 12 aromatic groups, 3 to 18 carbon atoms, an acryl group, a glycidyl group, an amine group, a thiol group, a halogen group, and a combination thereof 저굴절 조성물.Low refractive composition. 제1항에 있어서,The method of claim 1, 상기 오가노폴리실록산은 선형 구조, 망상형 구조 또는 이들 모두를 포함하는 The organopolysiloxane includes a linear structure, a network structure, or both 저굴절 조성물.Low refractive composition. 제1항에 있어서,The method of claim 1, 상기 오가노폴리실록산은 하기 화학식 1의 실란 화합물 및 하기 화학식 2의 실란 화합물을 포함하는 조성물이 졸-겔 반응을 진행하여 형성된The organopolysiloxane is formed by a sol-gel reaction of a composition comprising a silane compound of Formula 1 and a silane compound of Formula 2 저굴절 조성물:Low refractive composition: [화학식1][Formula 1] R1 xSi(OR2)4-x R 1 x Si (OR 2 ) 4-x [화학식 2][Formula 2] Si(OR3)4 Si (OR 3 ) 4 상기 화학식 1에서, 상기 R1은 탄소수 1개 내지 18개의 알킬기, 탄소수 2개 내지 6개의 에스테르기, 탄소수 2개 내지 12개의 에폭시기, 탄소수 2개 내지 12개의 알케닐기, 탄소수 6개 내지 12개의 방향족기, 탄소수 3개 내지 18개의 아크릴기, 글리시딜기, 아민기, 티올기 또는 할로겐기이고, 상기 R2 및 상기 R3는 각각 독립적으로, H, 또는 탄소수 1개 내지 18개의 알킬기이며, 상기 x는 1, 2, 또는 3이다. In Chemical Formula 1, R 1 is an alkyl group having 1 to 18 carbon atoms, an ester group having 2 to 6 carbon atoms, an epoxy group having 2 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, and having 6 to 12 carbon atoms Group, an acryl group having 3 to 18 carbon atoms, a glycidyl group, an amine group, a thiol group or a halogen group, and each of R 2 and R 3 is independently H or an alkyl group having 1 to 18 carbon atoms, and x is 1, 2, or 3. 제5항에 있어서,The method of claim 5, 상기 졸-겔 반응을 진행하기 이전 상기 조성물에 상기 무기 입자가 더 혼합되어 포함된Before the sol-gel reaction, the inorganic particles are further mixed and included in the composition. 저굴절 조성물.Low refractive composition. 제 1항에 있어서,The method of claim 1, 상기 오가노폴리실록산은 중량평균 분자량이 3,000g/mol 내지 55,000g/mol인The organopolysiloxane has a weight average molecular weight of 3,000 g / mol to 55,000 g / mol 저굴절 조성물.Low refractive composition. 제1항에 있어서,The method of claim 1, 상기 무기 입자는 실리카 입자, 알루미나 입자, 산화지르코늄 입자, 산화티타늄 입자, 산화안티몬 입자 및 이들의 조합으로 이루어진 군으로부터 선택된 적어도 하나의 입자를 포함하는The inorganic particles include at least one particle selected from the group consisting of silica particles, alumina particles, zirconium oxide particles, titanium oxide particles, antimony oxide particles, and combinations thereof. 저굴절 조성물.Low refractive composition. 제1항에 있어서,The method of claim 1, 치환 또는 비치환된 단분자 알콕시실란 화합물을 포함하지 않거나, 또는 더 포함하는It does not contain a substituted or unsubstituted single molecule alkoxysilane compound, or further comprises 저굴절 조성물.Low refractive composition. 제1항 내지 제9항 중 어느 한 항에 따른 저굴절 조성물에 의해 형성된 저굴절층을 포함하는 투명 도전성 필름.The transparent conductive film containing the low refractive layer formed by the low refractive composition of any one of Claims 1-9. 제10항에 있어서,The method of claim 10, 상기 저굴절층은 상부면에 미세 요철이 형성되고, The low refractive layer is formed with fine irregularities on the upper surface, 상기 미세 요철이 상기 무기 입자에 의해 형성된The fine irregularities are formed by the inorganic particles 투명 도전성 필름. Transparent conductive film. 제10항에 있어서,The method of claim 10, 상기 저굴절층의 두께는 10nm 내지 50nm인The thickness of the low refractive layer is 10nm to 50nm 투명 도전성 필름. Transparent conductive film. 제10항에 있어서,The method of claim 10, 상기 저굴절층은 굴절율이 1.40 내지 1.50인The low refractive index layer has a refractive index of 1.40 to 1.50 투명 도전성 필름.Transparent conductive film. 제10항에 있어서,The method of claim 10, 상기 저굴절층의 하부에 순차적으로 고굴절층 및 기재층을 더 포함하고,Further comprising a high refractive index layer and a base layer sequentially below the low refractive layer, 상기 저굴절층의 상부에 도전층을 더 포함하는 Further comprising a conductive layer on top of the low refractive index layer 투명 도전성 필름.Transparent conductive film. 제14항에 있어서, The method of claim 14, 상기 기재층의 일면 또는 양면에 접하는 하드코팅층을 더 포함하는Further comprising a hard coating layer in contact with one side or both sides of the base layer 투명 도전성 필름.Transparent conductive film. 제10항에 있어서,The method of claim 10, 광투과율이 85% 이상이고, 헤이즈가 0.1% 내지 0.8%인Light transmittance of 85% or more and haze of 0.1% to 0.8% 투명 도전성 필름.Transparent conductive film. 하기 화학식 1의 실란 화합물, 하기 화학식 2의 실란 화합물 및, 평균 직경이 30nm 내지 70nm인 무기 입자를 혼합하여 이들을 포함하는 원료 조성물을 준비하는 단계; 및Preparing a raw material composition including the silane compound of Formula 1, the silane compound of Formula 2, and inorganic particles having an average diameter of 30 nm to 70 nm; And 상기 원료 조성물에 대하여 졸-겔 반응을 진행시켜 저굴절 조성물을 제조하는 단계;Preparing a low refractive index composition by performing a sol-gel reaction on the raw material composition; 를 포함하는 저굴절 조성물의 제조방법:Method for producing a low refractive index composition comprising: [화학식1][Formula 1] R1 xSi(OR2)4-x R 1 x Si (OR 2 ) 4-x [화학식 2][Formula 2] Si(OR3)4 Si (OR 3 ) 4 상기 화학식 1에서, 상기 R1은 탄소수 1개 내지 18개의 알킬기, 탄소수 2개 내지 6개의 에스테르기, 탄소수 2개 내지 12개의 에폭시기, 탄소수 2개 내지 12개의 알케닐기, 탄소수 6개 내지 12개의 방향족기, 탄소수 3개 내지 18개의 아크릴기, 글리시딜기, 아민기, 티올기 또는 할로겐기이고, 상기 R2 및 상기 R3는 각각 독립적으로, H, 또는 탄소수 1개 내지 18개의 알킬기이며, 상기 x는 1, 2, 또는 3이다.In Chemical Formula 1, R 1 is an alkyl group having 1 to 18 carbon atoms, an ester group having 2 to 6 carbon atoms, an epoxy group having 2 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, and having 6 to 12 carbon atoms Group, an acryl group having 3 to 18 carbon atoms, a glycidyl group, an amine group, a thiol group or a halogen group, and each of R 2 and R 3 is independently H or an alkyl group having 1 to 18 carbon atoms, and x is 1, 2, or 3. 제17항에 있어서,The method of claim 17, 상기 화학식 1의 실란 화합물 및 상기 화학식 2의 실란 화합물의 총합 100 중량부에 대하여 상기 무기 입자를 0.5 중량부 내지 20 중량부로 혼합하여 상기 원료 조성물을 준비하는To prepare the raw material composition by mixing the inorganic particles in 0.5 to 20 parts by weight based on 100 parts by weight of the total of the silane compound of Formula 1 and the silane compound of Formula 2 저굴절 조성물의 제조방법.Process for the preparation of low refractive composition. 제17항에 있어서, The method of claim 17, 상기 졸-겔 반응을 진행시키는 동안 상기 실란 화합물들 간에 서로 화학 반응을 진행하여 오가노폴리실록산이 형성되는The organopolysiloxane is formed by chemical reaction between the silane compounds during the sol-gel reaction. 저굴절 조성물의 제조방법.Process for the preparation of low refractive composition.
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