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WO2015151790A1 - Élément d'imagerie à semi-conducteur, dispositif électronique et procédé d'imagerie - Google Patents

Élément d'imagerie à semi-conducteur, dispositif électronique et procédé d'imagerie Download PDF

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Publication number
WO2015151790A1
WO2015151790A1 PCT/JP2015/057836 JP2015057836W WO2015151790A1 WO 2015151790 A1 WO2015151790 A1 WO 2015151790A1 JP 2015057836 W JP2015057836 W JP 2015057836W WO 2015151790 A1 WO2015151790 A1 WO 2015151790A1
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WIPO (PCT)
Prior art keywords
pixel
solid
specific
pixels
imaging device
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Ceased
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PCT/JP2015/057836
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English (en)
Japanese (ja)
Inventor
圭司 田谷
知治 荻田
永野　隆史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to US15/128,629 priority Critical patent/US10181485B2/en
Priority to CN201580015676.0A priority patent/CN106133912B/zh
Priority to KR1020167022686A priority patent/KR102429308B1/ko
Publication of WO2015151790A1 publication Critical patent/WO2015151790A1/fr
Anticipated expiration legal-status Critical
Priority to US16/213,038 priority patent/US10658405B2/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/68—Control of cameras or camera modules for stable pick-up of the scene, e.g. compensating for camera body vibrations
    • H04N23/681—Motion detection
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Definitions

  • An imaging method includes a plurality of pixels that output pixel signals used to construct an image, and a logic circuit for driving the pixels, and the plurality of pixels are formed.
  • a first semiconductor substrate and a second semiconductor substrate on which the logic circuit is formed are configured to have a stacked structure, and the identification is a process other than the imaging process for capturing the image among the plurality of pixels.
  • the specific pixel that is the pixel that outputs the pixel signal used in processing is connected to the logic circuit independently of the normal pixel that is the pixel other than the specific pixel.
  • the solid-state imaging device 11 is configured to be able to drive only some of the pixels 21 when performing the specific process.
  • the pixel 21 that outputs a pixel signal in a normal imaging process is referred to as a normal pixel 21
  • the pixel 21 that outputs a pixel signal in a specific process is referred to as a specific pixel 21 ⁇ / b> X.
  • the normal pixels 21-1 to 21-N include the PDs 24-1 to 24-N, the transfer transistors 25-1 to 25-N, the FDs 26-1 to 26-N, and the amplification transistors. 27-1 to 27-N, selection transistors 28-1 to 28-N, and reset transistors 29-1 to 29-N, respectively.
  • the select transistors 28-1 to 28-N of the normal pixels 21-1 to 21-N are connected to a connection terminal 43-1 formed on the bonding surface of the sensor substrate 41.
  • the bias transistor 45-1 is connected to a connection terminal 44-1 formed on the bonding surface of the logic substrate 42.
  • the solid-state imaging device 11 configured as described above can drive the specific pixel 21X separately from the normal pixels 21-1 to 21-N.
  • the sensor substrate 41 and the logic substrate 42 are joined, so that the normal pixels 21-1 to 21-5 are connected to the logic substrate via the connection terminal 43-1 and the connection terminal 44-1.
  • the specific pixel 21X is electrically connected to the logic substrate 42 via the connection terminal 43-2 and the connection terminal 44-2. That is, the solid-state imaging device 11 has a configuration in which the normal pixels 21-1 to 21-5 and the specific pixel 21X are individually connected to the logic board 42.
  • the optical system 102 includes one or more lenses, guides image light (incident light) from a subject to the imaging unit 103, and forms an image on a light receiving surface (sensor unit) of the imaging unit 103.
  • the imaging unit 103 accumulates electrons for a certain period in accordance with an image formed on the light receiving surface via the optical system 102, and a signal processing circuit 104 and an operation detection unit 107 output signals corresponding to the accumulated electrons.
  • the above-described solid-state imaging element 11 can be applied to the imaging unit 103, and hereinafter, the imaging unit 103 is also referred to as a solid-state imaging element 11.
  • the solid-state imaging device 11 outputs a pixel signal only for the specific pixel 21X until the timing for storing the image, and the pixel signal output from all the pixels 21 (the normal pixel 21 and the specific pixel 21X) according to the timing for storing the image. Is supplied to the signal processing circuit 104.
  • the signal processing circuit 104 constructs an image from the pixel signals output from the solid-state imaging device 11, and performs various signal processing such as white balance adjustment processing and gamma correction processing. For example, when only the pixel signal of the specific pixel 21X is supplied, the signal processing circuit 104 supplies a low-resolution image constructed by these pixel signals to the display 105 to perform live view display. In addition, when pixel signals output from all the pixels 21 are supplied, the signal processing circuit 104 supplies a high-definition image constructed by these pixel signals to the recording medium 106 for storage (recording). .
  • the motion detection unit 107 performs, for example, a motion detection process for detecting a user's motion, and determines whether or not an imaging operation that is a predetermined motion serving as a trigger for storing an image has been performed. Only the pixel signal of the specific pixel 21X is supplied from the solid-state imaging device 11 to the motion detection unit 107, and the motion detection unit 107 is copied to an image based on an image composed of the pixel signal of only the specific pixel 21X. Detects user activity.
  • FIG. 6 is a flowchart for describing an imaging process (first imaging method) in which the imaging apparatus 101 stores an image when an imaging operation is performed by the user.
  • step S ⁇ b> 12 the motion detection unit 107 performs a motion detection process for detecting a user motion based on an image configured by only the pixel signal of the specific pixel 21 ⁇ / b> X supplied from the solid-state imaging device 11.
  • the motion detection unit 107 holds an image composed only of the pixel signal of the specific pixel 21X, and obtains a difference between the images when a predetermined number of images are accumulated, thereby performing the user's motion. To detect.
  • step S13 the motion detection unit 107 determines whether or not the user has performed a predetermined imaging operation (for example, an operation of waving a hand) instructing to capture an image as a result of the motion detection process in step S12.
  • a predetermined imaging operation for example, an operation of waving a hand
  • step S13 when the motion detection unit 107 determines that the user is not performing a predetermined imaging operation, the process returns to step S11, and the same processing is repeated thereafter. A pixel signal of only 21X is supplied. On the other hand, if the operation detection unit 107 determines in step S13 that the user has performed a predetermined imaging operation, the process proceeds to step S14.
  • step S14 the operation detection unit 107 instructs the solid-state image sensor 11 to drive all pixels, and the solid-state image sensor 11 is output from all the pixels 21 (the normal pixel 21 and the specific pixel 21X).
  • the pixel signal is supplied to the signal processing circuit 104.
  • the imaging apparatus 101A shown in FIG. 7 the same reference numerals are given to components common to the imaging apparatus 101 in FIG. 5, and detailed description thereof is omitted. That is, the imaging apparatus 101A is common to the imaging apparatus 101 in FIG. 5 in that the imaging apparatus 101A includes an optical system 102, an imaging unit 103 (for example, the solid-state imaging device 11 is applied), a signal processing circuit 104, a display 105, and a recording medium 106. To do. However, the imaging apparatus 101A has a configuration different from that of the imaging apparatus 101 in FIG.
  • step S ⁇ b> 22 the luminance detection unit 108 performs illuminance detection processing for detecting illuminance in the surrounding environment where the imaging device 101 ⁇ / b> A is placed based on the luminance of the pixel signal of the specific pixel 21 ⁇ / b> X supplied from the solid-state imaging device 11. .
  • step S24 it is determined whether or not the user has operated the shutter as an operation for instructing image capturing.
  • the user when the user operates the shutter of the imaging apparatus 101A, an operation signal indicating that the shutter has been operated is output from an operation control unit (not shown), and thereby the user operates the shutter. Determined.
  • the imaging device 101A can perform the illuminance detection process based on the luminance of the pixel signal output from the specific pixel 21X.
  • the imaging apparatus 101A drives all the pixels 21 and speeds up the processing compared to a configuration in which the illuminance detection processing is performed based on the luminance of the pixel signal output from all the pixels 21. And can be driven with low power consumption.
  • the addition processing of the solid-state imaging device 11 and the like can be performed more than the operation detection, and the illuminance sensor is mounted only for detecting the illuminance. Can be omitted.
  • FIG. 9 shows a cross-sectional configuration of the first modification of the solid-state imaging device.
  • the heights at which the on-chip lens 62Xa ′ and the on-chip lens 62Xb ′ are arranged are adjusted so that the light is collected on the end surfaces shielded by the light shielding film 71a and the light shielding film 71b.
  • the thickness of the insulating layer 55 stacked on the semiconductor substrate 54 is different between the specific pixel 21 ⁇ / b> X and the normal pixel 21 so that the light is collected on the end surfaces shielded by the light shielding film 71 a and the light shielding film 71 b.
  • the potential of the PD 24X of the specific pixel 21X can be different from the potential of the PD 24 of the normal pixel 21.
  • the potential of the PD 24X of the specific pixel 21X shallow, it is possible to transfer charges more reliably even when driving at high speed.
  • FIG. 12 is a block diagram showing a third configuration example of an imaging apparatus on which the solid-state imaging device 11A of FIG. 9 is mounted, for example.
  • the imaging device 101B includes the optical system 102, the imaging unit 103 (for example, applying the solid-state imaging device 11A), the signal processing circuit 104, the display 105, and the recording medium 106, and the imaging device 101B in FIG. Common.
  • the imaging apparatus 101B has a different configuration from the imaging apparatus 101 of FIG. 5 in that the imaging apparatus 101B includes an AF control unit 109 and a driving unit 110.
  • step S35 the signal processing circuit 104 supplies the image constructed by the pixel signal supplied from the solid-state imaging device 11 in step S34 to the recording medium 106 and stores it. Thereafter, the process returns to step S31, and the same process is repeated thereafter.
  • processing is started when a mode for saving motion information along with an image is selected.
  • the solid-state image pickup device 11 outputs a pixel signal only for the specific pixel 21X, The data is output to the detection unit 107.
  • step S45 the motion detection unit 107 performs a motion detection process for detecting the user's motion based on an image composed only of the pixel signal of the specific pixel 21X supplied from the solid-state imaging device 11.
  • step S48 the motion information calculated in step S47 and the image constructed in step S43 are stored in the recording medium 106 as a set. And after the process of step S48, a process returns to step S41 and the same process is repeated hereafter.
  • the processes described with reference to the flowcharts described above do not necessarily have to be processed in chronological order in the order described in the flowcharts, but are performed in parallel or individually (for example, parallel processes or objects). Processing).
  • the program may be processed by one CPU (Central Processing Unit) or may be distributedly processed by a plurality of CPUs.
  • CPU Central Processing Unit
  • a first semiconductor substrate having a plurality of pixels that output pixel signals used to construct an image; and a logic circuit for driving the pixels;
  • the pixel signal used in a specific process that is a process other than the imaging process for capturing the image among the plurality of pixels is output.

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

　La présente invention se rapporte à un élément d'imagerie à semi-conducteurs, un dispositif électronique et un procédé d'imagerie qui rendent possible d'augmenter la vitesse de pilotage et de réduire la consommation d'énergie quand un processus spécifique autre que l'imagerie normale est effectué. Cette invention est équipée de pixels pour délivrer en sortie un signal de pixel utilisé pour construire une image et d'un circuit logique pour piloter les pixels, et comprend une structure stratifiée obtenue par collage l'un à l'autre d'un premier substrat semi-conducteur sur lequel une pluralité de pixels sont formés et d'un second substrat semi-conducteur sur lequel le circuit logique est formé. Des pixels spécifiques, qui parmi les pixels sont ceux qui délivrent en sortie un signal de pixel utilisé dans un processus spécifique qui est un processus autre qu'un processus d'imagerie pour l'imagerie d'une image, sont connectés au circuit logique indépendamment de pixels normaux, qui sont des pixels autres que les pixels spécifiques. Cette technique peut être appliquée, par exemple, à un élément d'imagerie à semi-conducteur stratifié.
PCT/JP2015/057836 2014-03-31 2015-03-17 Élément d'imagerie à semi-conducteur, dispositif électronique et procédé d'imagerie Ceased WO2015151790A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US15/128,629 US10181485B2 (en) 2014-03-31 2015-03-17 Solid-state image sensor, electronic apparatus, and imaging method
CN201580015676.0A CN106133912B (zh) 2014-03-31 2015-03-17 固态图像传感器、电子装置和成像方法
KR1020167022686A KR102429308B1 (ko) 2014-03-31 2015-03-17 고체 촬상 소자, 전자 기기, 및 촬상 방법
US16/213,038 US10658405B2 (en) 2014-03-31 2018-12-07 Solid-state image sensor, electronic apparatus, and imaging method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014071167A JP2015195235A (ja) 2014-03-31 2014-03-31 固体撮像素子、電子機器、および撮像方法
JP2014-071167 2014-03-31

Related Child Applications (2)

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US15/128,629 A-371-Of-International US10181485B2 (en) 2014-03-31 2015-03-17 Solid-state image sensor, electronic apparatus, and imaging method
US16/213,038 Continuation US10658405B2 (en) 2014-03-31 2018-12-07 Solid-state image sensor, electronic apparatus, and imaging method

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WO2015151790A1 true WO2015151790A1 (fr) 2015-10-08

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US (2) US10181485B2 (fr)
JP (1) JP2015195235A (fr)
KR (1) KR102429308B1 (fr)
CN (1) CN106133912B (fr)
WO (1) WO2015151790A1 (fr)

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WO2017104765A1 (fr) * 2015-12-16 2017-06-22 株式会社ニコン Dispositif de capture d'image et procédé de détection de mouvement
EP3258493A1 (fr) * 2016-06-16 2017-12-20 ams AG Caméra de système sur puce avec capteur(s) de lumière intégré(s) et procédé de production d'une caméra de système sur puce
WO2018189994A1 (fr) * 2017-04-12 2018-10-18 Sony Semiconductor Solutions Corporation Dispositif d'imagerie à semi-conducteur
US10283554B2 (en) 2016-09-02 2019-05-07 Samsung Electronics Co., Ltd. Semiconductor devices including first sensor with infrared photodiode and second sensor with color photodiode
JP2023016801A (ja) * 2018-04-08 2023-02-02 アーティラックス・インコーポレイテッド 光検出装置
US12013463B2 (en) 2018-02-23 2024-06-18 Artilux, Inc. Light-sensing apparatus and light-sensing method thereof
US12072448B2 (en) 2015-11-06 2024-08-27 Artilux, Inc. High-speed light sensing apparatus
US12243901B2 (en) 2015-11-06 2025-03-04 Artilux, Inc. High-speed light sensing apparatus III
US12278252B2 (en) 2019-08-28 2025-04-15 Artilux, Inc. Photo-detecting apparatus with low dark current
US12477856B2 (en) 2019-08-28 2025-11-18 Artilux, Inc. Photo-detecting apparatus with low dark current

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US20170117310A1 (en) 2017-04-27
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