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WO2015030481A1 - Dispositif émetteur de lumière à semi-conducteurs et son procédé de fabrication - Google Patents

Dispositif émetteur de lumière à semi-conducteurs et son procédé de fabrication Download PDF

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Publication number
WO2015030481A1
WO2015030481A1 PCT/KR2014/007968 KR2014007968W WO2015030481A1 WO 2015030481 A1 WO2015030481 A1 WO 2015030481A1 KR 2014007968 W KR2014007968 W KR 2014007968W WO 2015030481 A1 WO2015030481 A1 WO 2015030481A1
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WIPO (PCT)
Prior art keywords
emitting device
light emitting
semiconductor light
device chip
conversion material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2014/007968
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English (en)
Korean (ko)
Inventor
전수근
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semicon Light Co Ltd
Original Assignee
Semicon Light Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020130101786A external-priority patent/KR101543724B1/ko
Priority claimed from KR1020130101851A external-priority patent/KR101543725B1/ko
Priority claimed from KR1020130101842A external-priority patent/KR101638123B1/ko
Application filed by Semicon Light Co Ltd filed Critical Semicon Light Co Ltd
Publication of WO2015030481A1 publication Critical patent/WO2015030481A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Definitions

  • the present disclosure relates to a semiconductor light emitting device and a method of manufacturing the same as a whole, and more particularly, to a semiconductor light emitting device and a method of manufacturing the same, which can reduce the use of a light conversion material (for example, a phosphor). MANUFACTURING THE SAME).
  • a light conversion material for example, a phosphor
  • the semiconductor light emitting device refers to a semiconductor optical device such as a light emitting diode (LED) and a laser diode (LD) that generate light through recombination of electrons and holes, and may be a group III nitride semiconductor light emitting device.
  • the group III nitride semiconductor consists of a compound of Al (x) Ga (y) In (1-x-y) N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1).
  • GaAs type semiconductor light emitting elements used for red light emission, etc. are mentioned.
  • FIG. 1 is a view illustrating an example of a conventional semiconductor light emitting device chip, wherein the semiconductor light emitting device chip includes a substrate 100, a buffer layer 200, and a first semiconductor having a first conductivity on the substrate 100.
  • the layer 300, an active layer 400 that generates light through recombination of electrons and holes, and a second semiconductor layer 500 having a second conductivity different from that of the first conductivity are sequentially deposited thereon.
  • the transmissive conductive film 600 and the electrode 700 serving as the bonding pad are formed, and the electrode 800 serving as the bonding pad is formed on the etched and exposed first semiconductor layer 300.
  • FIG. 2 is a view illustrating a flip chip of a semiconductor light emitting device chip disclosed in US Patent No. 7,262,436, wherein the semiconductor light emitting device chip is formed on a substrate 100 (eg, a sapphire substrate) and a substrate 100.
  • a first semiconductor layer 300 having a conductivity eg, an n-type GaN layer
  • an active layer 400 generating light through recombination of electrons and holes eg, InGaN / (In) GaN MQWs
  • a second semiconductor layer 500 having a second conductivity for example, p-type GaN layer
  • a three-layer electrode film 901 eg, Ag
  • an electrode film 902 e.g., Ni diffusion barrier film
  • an electrode film 903 e.g., Au bonding layer
  • the electrode film 903 side when the electrode film 903 side is placed in the package, it functions as a mounting surface.
  • a dielectric laminate structure e.g. DBR of SiO 2 / TiO 2
  • a method of forming a phosphor in such a semiconductor light emitting device chip is disclosed in US Patent No. 6,650,044.
  • FIG 3 is a view illustrating an example of a conventional semiconductor light emitting device, wherein the semiconductor light emitting device includes a vertical semiconductor light emitting device chip 150 in the lead frames 110 and 120, the mold 130, and the cavity 140. 1 to 2.
  • the semiconductor light emitting device (chip) shown in FIGS. 1 and 2 may be provided.), and the cavity 140 may function as a light conversion unit. It is filled with the sealing material 170 containing.
  • a lower surface of the vertical semiconductor light emitting device chip 150 is electrically connected to the lead frame 110, and an upper surface of the vertical semiconductor light emitting device chip 150 is electrically connected to the lead frame 120 by a wire 180.
  • a portion of the light (eg, blue light) from the vertical semiconductor light emitting device chip 150 excites the phosphor 160, and the phosphor 160 generates light (eg, yellow light), and these lights (blue light + yellow light) Make this white light.
  • the support 130 of the semiconductor light emitting device package that is, the carrier
  • the mold 130-the encapsulant 170 or the lead frames 110 and 120-the mold 130-the encapsulant 170 carries the vertical semiconductor light emitting chip. It acts as a carrier.
  • a technique for sedimenting the phosphor 160 has been proposed (for example, US Patent No. 6,960,878).
  • the base 10 illustrates a problem associated with phosphor settling, wherein the base 10, the semiconductor light emitting device chip 20 on the base 20, and the semiconductor light emitting device chip 20 on the base 10 are shown.
  • a covering encapsulant 30 is shown.
  • the phosphor 31 is uniformly distributed in the sealing material 30. As shown below in FIG. 4, the phosphor 31 may be settled in the encapsulant 30 using appropriate encapsulant 30 curing conditions.
  • the thickness t 1 of the encapsulant 30 in the region A on the semiconductor light emitting device chip 20 is equal to the thickness t of the encapsulant 30 in the region B in which the semiconductor light emitting chip 20 is not placed.
  • a semiconductor light emitting device comprising: a semiconductor light emitting device chip that generates light using recombination of electrons and holes; And a light conversion material-containing layer containing a light conversion material for converting light generated in the semiconductor light emitting device chip into light having a different wavelength; And a settling distance limiting layer formed around the semiconductor light emitting device chip under the light converting material-containing layer so as to reduce the settling distance of the light converting material.
  • an semiconductor light emitting device may include: a semiconductor light emitting device chip that generates light using recombination of electrons and holes; And an encapsulant which converts light generated by the semiconductor light emitting device chip into light having a different wavelength, and encapsulates the semiconductor light emitting device chip, wherein the density of the light converting material in the region above the semiconductor light emitting device chip is increased.
  • a semiconductor light emitting device is provided which is higher than the density of the light conversion material in a region where the semiconductor light emitting device chip is not located.
  • a semiconductor light emitting device comprising: a semiconductor light emitting device chip that generates light using recombination of electrons and holes; A light conversion material-containing layer containing a light conversion material for converting light generated in the semiconductor light emitting device chip into light having a different wavelength; And a sedimentation control layer positioned below the light conversion material containing layer and containing the light conversion material precipitated from the light conversion material containing layer.
  • a method of manufacturing a semiconductor light emitting device comprising placing a semiconductor light emitting device chip that generates light by recombination of electrons and holes on a substrate step; Forming a settling control layer to surround at least a portion of the semiconductor light emitting device chip; Forming a light conversion material-containing layer containing a light conversion material for converting light generated by the semiconductor light emitting device chip into light having a different wavelength on the sedimentation control layer; And, it is provided with a method for manufacturing a semiconductor light emitting device comprising a; the step of sedimenting the light conversion material in the light conversion material containing layer to the sedimentation control layer.
  • a semiconductor light emitting device comprising: a semiconductor light emitting device chip that generates light using recombination of electrons and holes; A colored protective layer surrounding upper and lower portions of the semiconductor light emitting device chip and in contact with the semiconductor light emitting device chip; And a light conversion material-containing layer formed on the semiconductor light emitting device chip and including a light conversion material for converting light generated in the semiconductor light emitting device chip into light having a different wavelength.
  • a method of manufacturing a semiconductor light emitting device comprising placing a semiconductor light emitting device chip that generates light by recombination of electrons and holes on a substrate step; Enclosing the colored protective layer in contact with the semiconductor light emitting device chip; And placing a light conversion material containing layer on the open top of the semiconductor light emitting device chip, the light conversion material containing layer converting light generated by the semiconductor light emitting device chip into light having a different wavelength.
  • a method of manufacturing a light emitting device is provided.
  • a method of manufacturing a semiconductor light emitting device comprising: placing a semiconductor light emitting device chip on a substrate to generate light using recombination of electrons and holes; Encapsulating the semiconductor light emitting device chip with a light transmitting material; Forming a colored protective layer to contact the light-transmitting material while opening the upper and lower portions of the semiconductor light emitting device chip; And placing a light conversion material-containing layer on the semiconductor light emitting device chip, the light conversion material containing layer including a light conversion material for converting light generated in the semiconductor light emitting device chip into light having a different wavelength.
  • a method is provided.
  • 1 is a view showing an example of a conventional semiconductor light emitting device chip (Lateral Chip),
  • FIG. 2 is a view illustrating an example of a flip chip of a semiconductor light emitting device chip disclosed in US Patent No. 7,262,436;
  • FIG. 3 is a view showing another example of a conventional semiconductor light emitting device
  • FIG. 4 is a diagram illustrating a problem associated with phosphor sedimentation
  • FIG. 5 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure.
  • 6 to 8 are views showing various combinations of the sediment control layer and the light conversion material-containing layer configuration
  • FIG. 9 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • FIG. 10 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • 11 to 12 are views showing other examples of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • 13 to 15 are views showing various combinations of the light conversion material-containing layer and the colored protective layer;
  • FIG. 16 illustrates another example of the semiconductor light emitting device according to the present disclosure
  • FIG. 17 illustrates another example of a semiconductor light emitting device according to the present disclosure
  • FIGS. 18 to 23 are views showing still another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • a semiconductor light emitting device includes a light conversion material-containing layer containing a semiconductor light emitting device chip 20 and a light conversion material 31 on a substrate 10. 33) and the sedimentation adjusting layer 32 containing the light conversion material 31 sedimented from the light conversion material containing layer 33.
  • a semiconductor light emitting device chip As the semiconductor light emitting device chip 20, a semiconductor light emitting device chip having a shape shown in FIGS. 1 to 3 may be used, and a semiconductor light emitting device chip made of a group III nitride semiconductor may be used.
  • the light converting material 31 may be any type as long as it converts light generated from the active layer of the semiconductor light emitting device chip into light having a different wavelength (eg, pigments, dyes, etc.). , (Sr, Ba, Ca) 2 SiO 4 : Eu and the like).
  • the light converting material-containing layer 33 may further contain a light scattering material or the like.
  • an epoxy resin, a silicone resin, or the like generally used in the semiconductor light emitting device field may be used.
  • the sedimentation adjusting layer 32 the same material as the light conversion-containing layer 31 can be used, and if necessary, a material having a different viscosity and / or curing rate can be used.
  • the precipitation control layer 32 is formed (eg, dispensing, stencil, screen printing, spin coating, etc.), and the light conversion material-containing layer 33 is disposed thereon. ) Is formed by spraying, stenciling, screen printing, sping coating, or dispensing. Spray coating is preferred from the viewpoint of uniformity of thickness, internal density of phosphors, and the like. Since the material constituting the sedimentation control layer 32 and the light conversion material-containing layer 33 is generally a thermosetting resin, after the sedimentation control layer 32 is formed, the sedimentation control layer 32 is cured or the sedimentation control is performed.
  • the light conversion material-containing layer 33 While maintaining the state that the layer 32 is not cured, the light conversion material-containing layer 33 is formed, and then the light conversion material 31 is cured so as to settle from the light conversion material-containing layer 33 into the settling control layer 32. Maintain the condition. Although natural sedimentation is not impossible, it is common to control the temperature so that sedimentation occurs well, and this sedimentation process is generally used by those skilled in the art. In general, in the case of silicone, the curing temperature is 40 ⁇ 90 °C, the viscosity becomes weaker than the room temperature, the liquefaction is made, and after passing through the section, the hardness is strengthened again, by adjusting the temperature and time of the liquefaction to control the degree of sedimentation If the silicon does not contain a binder, the settling speed may be faster. For example, a sedimentation process can be performed at the temperature of 50-80 degreeC for 10-60 minutes.
  • the substrate 10 may or may not form part of the semiconductor light emitting element.
  • the lead frame of FIG. 3, a PCB on which an electrical pattern is formed, a submount, and the like may be examples of the substrate 10.
  • the substrate 10 does not form part of the semiconductor light emitting device, after the sedimentation and curing are completed, the substrate 10 is removed and the sedimentation control layer 32 is operated by a method such as sawing by the blade 40. ) And the light conversion material-containing layer 33 can be cut to form a single semiconductor light emitting element (see FIG. 9). This method is particularly advantageous when a flip chip type semiconductor light emitting device chip 20 is used in which two electrodes 21 can be exposed to the settling control layer 32 side.
  • the semiconductor light emitting device may have various forms such as a shell type package, a surface mounted device (SMD) type package, a chip on board (COB) type package, but a semiconductor light emitting device chip 20 and a settling control layer. (32) And it is sufficient to provide the light conversion material containing layer 33.
  • SMD surface mounted device
  • COB chip on board
  • the light converter 31 does not necessarily have to be settled to the bottom surface.
  • the density or concentration of the light converting agent 31 in the thickness t 1 of the region A is equal to the light converting agent 31 in the thickness t 2 of the region B.
  • the density or concentration of is greater than. Assuming that the density or concentration of the light converting material 31 injected into the light converting material-containing layer 33 is generally uniform, the total number of the light converting agents 31 in both regions A and B is similar, but the thickness is similar. Different, ie, different in volume, different in density or concentration.
  • FIG. 6 to 8 show various combinations of the settling control layer and the light conversion material-containing layer configuration
  • FIG. 6 shows the thickness t 4 of the settling control layer 32 and the thickness of the light conversion material-containing layer 33.
  • An example in which (t 3 ) is the same is shown, and in FIG. 7, an example in which the thickness t 1 on the region A and the thickness t 4 of the sediment control layer 32 is the same is shown, and in FIG. 8, the sediment control is shown.
  • An example is provided in which the layer 32 does not reach the height of the semiconductor light emitting device chip 20 (the settling adjusting layer 32 covers only a part of the semiconductor light emitting device chip 20), and the settling control layer 32 is also provided.
  • the light conversion material and / or the light scattering material 34 are contained separately from the light conversion material 31 contained in the light conversion material containing layer 33 .
  • the viscosity of both, and curing conditions, the content of the light conversion material 33, the distribution density in the settling control layer 32 and the light conversion material containing layer 33, the settling time, and the like can be adjusted. Will be.
  • FIG. 10 is a view showing an example of another semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device includes a colored protective layer 35 instead of the sedimentation control layer 32.
  • a colored protective layer 35 By introducing such a colored protective layer 35 and forming the light conversion material-containing layer 33 on the colored protective layer 35, the light conversion material 31 on the side surface of the semiconductor light emitting element chip 20 is unnecessary. It can be prevented from being used much.
  • the light converting material-containing layer 33 may be formed by the above-described method, and may be formed, for example, by spray coating, or by dispensing, screen printing, or stencil. In addition, the light conversion material 31 can be settled.
  • the sedimentation may function to make the distribution of the light conversion material 31 uniform in the light conversion material-containing layer 33 downward to make the entire light emission of the light emitting element uniform.
  • the colored protective layer 35 primarily functions to reduce the amount of the light conversion material 31 used, but additionally and preferably has a function of reflecting light generated from the semiconductor light emitting device chip 20. It is colored, that is, has a color that does not transmit light.
  • the colored protective layer 35 is preferably made of a white material (for example, white silicon).
  • the colored protective layer 35 is surrounded to contact the side surface 20c of the semiconductor light emitting device chip 20 while opening the upper and lower portions 20a and 20b of the semiconductor light emitting device chip 20.
  • the upper part 20a and the lower part 20b of the semiconductor light emitting device chip 20 are also the upper part and the lower part of the colored protective layer 35.
  • Various flip chip type semiconductor light emitting device chips 20 described with reference to FIG. 2 may be used.
  • the two electrodes 21 and 21 of the semiconductor light emitting device chip 20 may be colored.
  • 35 may be exposed through the lower portion 20b.
  • the exposure means exposure in the relationship between the semiconductor light emitting device chip 20 and the colored protective layer 35, and does not mean exposure through the substrate 10 or removal of the substrate 10.
  • the substrate 10 may have the same form as described above and may be removed.
  • FIG. 11 to 12 are views showing other examples of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device chip 20 and the colored protective layer ( 35) And the light conversion material containing layer 33 is cut
  • An electrical pattern may be formed on the substrate 10, and in this case, the substrate 10 and the semiconductor LED chip may be formed by wire bonding, conductive paste, or eutectic bonding according to the shape of the semiconductor LED chip 20. 20) may be in electrical communication.
  • FIG. 13 to 15 illustrate various combinations of the light conversion material-containing layer and the colored protective layer.
  • the upper surface 35d of the colored protective layer 35 is formed on the upper surface of the semiconductor light emitting device chip 20. 20d) is shown below the semiconductor light emitting device, and in FIG. 14, a semiconductor light emitting device in which the top surface 35d of the colored protective layer 35 is placed on the top surface 20d of the semiconductor light emitting device chip 20 is shown.
  • 15 shows a semiconductor light emitting device having a sloped surface 36 which is chamfered at the side where the colored protective layer 35 and the semiconductor light emitting device chip 20 meet.
  • a colored protective layer 35 is formed and then formed to have a structure of the corresponding colored protective layer 35 through mechanical polishing, dry etching, wet etching, or a combination thereof. Can be.
  • the inclined surface 36 may be formed through such active etching since etching is actively performed at a vertex in the process of forming the colored protective layer 35 shown in FIG. 14.
  • FIG. 16 is a view showing an example of another semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device includes a coating layer or a coating layer 37 on the semiconductor light emitting device chip 20, and the colored protective layer 35 is formed.
  • the semiconductor light emitting device chip 20 is in contact with the coating layer 37.
  • the coating layer 37 is formed of a light transmitting material (for example, transparent silicon), and serves to reduce light absorption by the colored protective layer 35.
  • a material having a refractive index of less than 1.6 can be used.
  • the coating layer 37 may be formed by various methods such as dispensing, spray coating, and spin coating, and in the case of using spray coating or spin coating, may be conformally coated.
  • conformal coating means that the inner and outer surfaces of the coating layer 37 follow the outer shape of the semiconductor light emitting device chip 20 as it is, and the coating does not have a special meaning and has a meaning of covering.
  • the coating layer or the coating layer 37 may also contain a light converting agent, and its concentration may be lower than that of the light converting material containing layer 33. It is also possible for the light conversion material 31 to settle from the light conversion material containing layer 33, and the light conversion material to settle within it.
  • FIG. 17 is a view showing another example of the semiconductor light emitting device according to the present disclosure, in which the semiconductor light emitting device seals the semiconductor light emitting device chip 20 on the substrate 10 in addition to the colored protective layer 35 ( and an encapsulating light transmitting material 38.
  • the upper portion 20a and the lower portion 20b of the semiconductor light emitting device chip 20 are open without being covered by the colored protective layer 35 so that light can pass therethrough, and the light emitting material 31 is contained thereon.
  • the light conversion material containing layer 33 is formed.
  • the colored protective layer 35 is preferably provided in white.
  • the light transmissive material 38 may be formed of the same method and the same material as the settling control layer 32, and may further include a light converting material. In FIG.
  • the height of the translucent material 38 and the height of the colored protective layer 35 are higher than the height of the semiconductor light emitting device chip 20, but have various height relationships as shown in FIGS. 10 and 13. Can be.
  • the light transmissive material 38 does not necessarily have to encapsulate the upper portion 20a of the semiconductor light emitting device chip 20. Through this configuration, it is possible to reduce the consumption of the light conversion material 31, while reducing the light absorption by the colored protective layer 35.
  • FIG. 18 to 23 are diagrams illustrating still another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • one or a plurality of semiconductor light emitting device chips 20 are first formed on a substrate 10. And 20, the semiconductor light emitting device chip 20 is encapsulated with a light transmissive material 38.
  • the translucent material 38 eg, epoxy resin, silicone resin
  • the translucent material 38 may be formed by methods such as dispensing, stencils, screen printing, spin coating, and the like.
  • a gap 38a is formed in the light transmissive material 38 to separate the light transmissive material 38.
  • the gap 38a may be formed up to the substrate 10, but may also be formed so as not to reach the substrate 10, as in (b).
  • the gap 38a may be formed by a sawing using a blade, a press using a pointed tip, or the like.
  • the external force F is applied in all directions to widen the gap 38a or to separate the semiconductor light emitting device chips 20 and 20 from each other.
  • the external force F can be applied by forming the base material 10 with a flexible material such as a blue tape and then tensioning the base material 10 in one or more directions to widen the gap 38a. have. This makes it possible to reduce the consumption of the light transmissive material 38 and the light conversion material contained therein than when using a wider blade.
  • a colored protective layer 35 is formed in the gap 38a.
  • the colored protective layer 35 can be formed by the method of destenting, screening, etc., and can also be formed using a mold.
  • the light conversion material containing layer 33 is formed. If necessary, as shown in FIG. 22, the colored protective layer 35 may be cut to include the semiconductor light emitting device chip 20 using the blade 40.
  • the light transmissive material 38 may contain a light converting material or a light scattering material 39 separately from the light converting material 31, and the substrate 10 may be removed or the substrate ( 10) It is possible to cut using a blade or file saw 40, etc. in a removed state.
  • a semiconductor light emitting device comprising: a semiconductor light emitting device chip for generating light by recombination of electrons and holes; And an encapsulant which converts light generated by the semiconductor light emitting device chip into light having a different wavelength, and encapsulates the semiconductor light emitting device chip, wherein the density of the light converting material in the region above the semiconductor light emitting device chip is increased. And a density of light converting material in a region where the semiconductor light emitting device chip is not located.
  • the encapsulant means a cover layer made of a single material or a plurality of materials surrounding the semiconductor light emitting device chip.
  • it may be formed by dispensing a resin material that does not contain a phosphor, followed by dispensing a resin material of the same material that contains a phosphor in succession, or by dispensing a resin material that does not contain a phosphor, It may be formed by applying a phosphor or a phosphor layer by spray coating, and may be formed in various ways.
  • the encapsulant has a thickness of the region above the semiconductor light emitting device chip being thinner than the thickness of the region where the semiconductor light emitting device chip is not located.
  • the encapsulant includes a light converting material containing layer containing a light converting material, and a settling adjusting layer containing a light converting material deposited under the light converting material containing layer and settled from the light converting material containing layer.
  • Light emitting element
  • a semiconductor light emitting device comprising: a semiconductor light emitting device chip for generating light by recombination of electrons and holes; A light conversion material-containing layer containing a light conversion material for converting light generated in the semiconductor light emitting device chip into light having a different wavelength; And a sedimentation control layer positioned below the light conversion material containing layer and containing the light conversion material precipitated from the light conversion material containing layer.
  • a semiconductor light emitting element wherein the light conversion material-containing layer and the sedimentation control layer are made of the same material.
  • a semiconductor light emitting element wherein the viscosity of the sedimentation adjusting layer is lower than the viscosity of the light conversion material-containing layer.
  • a semiconductor light emitting element characterized in that the settling adjusting layer contains a light converting material separately from the light converting material precipitated from the light converting material-containing layer.
  • the light conversion material of a light conversion material containing layer into a yellow fluorescent substance, and to make another light conversion material in a sedimentation control layer into a red or green fluorescent substance.
  • a method of manufacturing a semiconductor light emitting device comprising the steps of: placing a semiconductor light emitting device chip on the substrate to generate light by recombination of electrons and holes; Forming a settling control layer to surround at least a portion of the semiconductor light emitting device chip; Forming a light conversion material-containing layer containing a light conversion material for converting light generated by the semiconductor light emitting device chip into light having a different wavelength on the sedimentation control layer; And depositing the light converting material in the light converting material-containing layer into the sedimentation adjusting layer.
  • the light conversion material-containing layer can be composed of only the light conversion material itself.
  • the present application does not exclude the application of a phosphor on the sedimentation control layer followed by sedimentation thereof.
  • a semiconductor light emitting device comprising: a semiconductor light emitting device chip for generating light by recombination of electrons and holes; A colored protective layer surrounding upper and lower portions of the semiconductor light emitting device chip and in contact with the semiconductor light emitting device chip; And a light conversion material-containing layer formed on the semiconductor light emitting device chip and containing a light conversion material for converting light generated in the semiconductor light emitting device chip into light having a different wavelength.
  • a semiconductor light emitting device wherein the colored protective layer is a white protective layer.
  • a semiconductor light emitting element characterized in that the upper surface of the colored protective layer is located below the upper surface of the semiconductor light emitting element chip.
  • a semiconductor light emitting element characterized in that the upper surface of the colored protective layer is located on the upper surface of the semiconductor light emitting element chip.
  • a semiconductor light emitting element wherein the upper surface of the colored protective layer is chamfered at the side where the upper surface of the semiconductor light emitting element chip meets.
  • a semiconductor light emitting device comprising: a coating layer conformally coated on a semiconductor light emitting device chip, wherein the colored protective layer is in contact with the semiconductor light emitting device chip through the coating layer.
  • a semiconductor light emitting device characterized in that it further comprises; a substrate on which the semiconductor light emitting chip and the colored protective layer is placed.
  • (21) A semiconductor light emitting device, characterized in that the lower surface of the semiconductor light emitting device chip is exposed through the colored protective layer.
  • a semiconductor light emitting device comprising two electrodes of a semiconductor light emitting device chip exposed through a colored protective layer.
  • the colored protective layer is a white protective layer, wherein two electrodes of the semiconductor light emitting device chip are exposed through a lower portion of the colored protective layer.
  • a method of manufacturing a semiconductor light emitting device comprising: cutting a colored protective layer and a light conversion material-containing layer such that the semiconductor light emitting device chip is included.
  • a method of manufacturing a semiconductor light emitting device further comprising the step of: separating the substrate from the colored protective layer prior to cutting.
  • a method of manufacturing a semiconductor light emitting device further comprising the step of forming a coating layer on the semiconductor light emitting device chip prior to the enclosing step.
  • a method of manufacturing a semiconductor light emitting device comprising the steps of: placing a semiconductor light emitting device chip on the substrate to generate light by recombination of electrons and holes; Encapsulating the semiconductor light emitting device chip with a light transmitting material; Forming a colored protective layer to contact the light-transmitting material while opening the upper and lower portions of the semiconductor light emitting device chip; And placing a light conversion material-containing layer on the semiconductor light emitting device chip, the light conversion material containing layer including a light conversion material for converting light generated in the semiconductor light emitting device chip into light having a different wavelength. Way.
  • the method of manufacturing a semiconductor light emitting device characterized in that it further comprises.
  • a plurality of semiconductor light emitting device chips are placed on the substrate, and prior to forming a colored protective layer, applying a external force in a direction away from each other; Method of manufacturing a semiconductor light emitting device.
  • a method of manufacturing a semiconductor light emitting device comprising: cutting a colored protective layer to include a semiconductor light emitting device chip.
  • a method for manufacturing a semiconductor light emitting element wherein the semiconductor light emitting element chip is a flip chip whose electrode is located on the opposite side of the light conversion material-containing layer.
  • a semiconductor light emitting device comprising: a semiconductor light emitting device chip for generating light by recombination of electrons and holes; And a light conversion material-containing layer containing a light conversion material for converting light generated in the semiconductor light emitting device chip into light having a different wavelength; And a settling distance limiting layer formed around the semiconductor light emitting device chip under the light converting material-containing layer to reduce the settling distance of the light converting material.
  • the sedimentation distance limiting layer may be formed of a sedimentation adjusting layer 32, a colored protective layer 35, or a combination thereof, and serves to reduce or uniformize the sedimentation distance of the light conversion material as compared with a conventional semiconductor light emitting device. do.
  • a semiconductor light emitting device according to claim 1, wherein the settling distance limiting layer comprises a light transmitting material.
  • a semiconductor light emitting element according to claim 1, wherein the settling distance limiting layer includes a colored protective layer.

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Abstract

L'invention porte sur un dispositif émetteur de lumière à semi-conducteurs et sur un procédé de fabrication de celui-ci, le dispositif comprenant : une puce de dispositif émetteur de lumière à semi-conducteurs pour générer une lumière par utilisation de la recombinaison d'électrons et de trous positifs ; un matériau photoconvertible contenant une couche contenant un matériau photoconvertible pour convertir la lumière générée par la puce de dispositif émetteur de lumière à semi-conducteurs en une lumière ayant une longueur d'onde différente ; et une couche de restriction de distance de sédimentation formée autour de la puce de dispositif émetteur de lumière à semi-conducteurs sous le matériau photoconvertible contenant la couche afin de réduire la distance de sédimentation du matériau photoconvertible.
PCT/KR2014/007968 2013-08-27 2014-08-27 Dispositif émetteur de lumière à semi-conducteurs et son procédé de fabrication Ceased WO2015030481A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR10-2013-0101851 2013-08-27
KR10-2013-0101842 2013-08-27
KR1020130101786A KR101543724B1 (ko) 2013-08-27 2013-08-27 반도체 발광소자 및 이를 제조하는 방법
KR1020130101851A KR101543725B1 (ko) 2013-08-27 2013-08-27 반도체 발광소자를 제조하는 방법
KR10-2013-0101786 2013-08-27
KR1020130101842A KR101638123B1 (ko) 2013-08-27 2013-08-27 반도체 발광소자 및 이를 제조하는 방법

Publications (1)

Publication Number Publication Date
WO2015030481A1 true WO2015030481A1 (fr) 2015-03-05

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Country Link
WO (1) WO2015030481A1 (fr)

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JP2009124043A (ja) * 2007-11-16 2009-06-04 Toyoda Gosei Co Ltd 発光装置
KR101086997B1 (ko) * 2009-04-29 2011-11-29 엘지전자 주식회사 발광 소자 패키지와 그의 제조 방법 및 그를 이용한 카메라 플래시 모듈
KR20120001459A (ko) * 2010-06-29 2012-01-04 삼성엘이디 주식회사 파장변환형 반도체 발광소자
WO2012029695A1 (fr) * 2010-08-31 2012-03-08 日亜化学工業株式会社 Dispositif émetteur de lumière et son procédé de fabrication
JP2012069577A (ja) * 2010-09-21 2012-04-05 Citizen Electronics Co Ltd 半導体発光装置及びその製造方法
KR20120085660A (ko) * 2011-01-24 2012-08-01 스탠리 일렉트릭 컴퍼니, 리미티드 발광장치 및 그 제조방법
KR101180134B1 (ko) * 2008-05-30 2012-09-05 도시바 마테리알 가부시키가이샤 백색 ｌｅｄ 및 그를 사용한 백라이트 및 액정 표시 장치
JP2012227202A (ja) * 2011-04-15 2012-11-15 Toppan Printing Co Ltd Ｌｅｄパッケージ及びその製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200296162Y1 (ko) * 2002-09-06 2002-11-22 럭스피아 주식회사 백색 발광다이오드
KR100772648B1 (ko) * 2006-07-21 2007-11-02 (주) 아모센스 반도체 패키지
JP2009124043A (ja) * 2007-11-16 2009-06-04 Toyoda Gosei Co Ltd 発光装置
KR101180134B1 (ko) * 2008-05-30 2012-09-05 도시바 마테리알 가부시키가이샤 백색 ｌｅｄ 및 그를 사용한 백라이트 및 액정 표시 장치
KR101086997B1 (ko) * 2009-04-29 2011-11-29 엘지전자 주식회사 발광 소자 패키지와 그의 제조 방법 및 그를 이용한 카메라 플래시 모듈
KR20120001459A (ko) * 2010-06-29 2012-01-04 삼성엘이디 주식회사 파장변환형 반도체 발광소자
WO2012029695A1 (fr) * 2010-08-31 2012-03-08 日亜化学工業株式会社 Dispositif émetteur de lumière et son procédé de fabrication
JP2012069577A (ja) * 2010-09-21 2012-04-05 Citizen Electronics Co Ltd 半導体発光装置及びその製造方法
KR20120085660A (ko) * 2011-01-24 2012-08-01 스탠리 일렉트릭 컴퍼니, 리미티드 발광장치 및 그 제조방법
JP2012227202A (ja) * 2011-04-15 2012-11-15 Toppan Printing Co Ltd Ｌｅｄパッケージ及びその製造方法

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